Active gas generation device

Abstract

The purpose of the present disclosure is to provide a structure for an active gas generation device capable of supplying high-purity active gas without complicating the manufacturing process. In the present invention, an electrode unit (81) includes a dielectric protection film (FC2) that takes, from between dielectric films (F2) and (F3), the dielectric film (F2) as the dielectric film to be protected, and that is closely adhered to the lower surface of the dielectric film F2. A discharge space (4) is provided in a dielectric space (18) which is a space in which the dielectric protection film (FC2) and the dielectric film (F3) face each other, the discharge space including a region in which a high-voltage electrode (F5) and a ground electrode (F6) overlap in plan view. The constituent material of the dielectric protection film (FC2) has the protective characteristics of blocking the irradiation of ions generated by the dielectric barrier discharge to the dielectric film (F2) when the dielectric barrier discharge occurs in the discharge space (4), and not chemically reacting with the ions.

Description

Activated Gas Generator

[0001] The present disclosure relates to an active gas generator having a parallel plate electrode structure and generating an active gas by utilizing a dielectric barrier discharge.

[0002] In conventional activated gas generators that have a parallel plate electrode structure and employ a dielectric barrier discharge, the discharge space is the gap between the opposing metal electrodes (electrode conductive film) and dielectric film (electrode dielectric film), or the gap between opposing dielectric films.

[0003] Conventional activated gas generators employ a parallel-plate dielectric barrier discharge, which generates a dielectric barrier discharge in a discharge space and activates a raw material gas introduced into the discharge space to generate activated gas.

[0004] An example of an active gas generator employing a parallel plate dielectric barrier discharge is disclosed in Patent Document 1.

[0005] International Publication No. 2019 / 138456

[0006] Such conventional active gas generators generate a dielectric barrier discharge in the discharge space, and therefore, depending on the type of source gas and the material of the dielectric film, there is a possibility that a chemical reaction will occur between the ions generated by the dielectric barrier discharge and the dielectric film, resulting in the release of elements or compounds that constitute the dielectric film from the dielectric film, causing a dielectric film reaction phenomenon.

[0007] When a dielectric film reaction occurs, the released elements or their compounds are mixed with the active gas, which means that impurities are mixed into the active gas. In theory, this dielectric film reaction can be prevented by changing the dielectric film material to one that does not undergo chemical reactions.

[0008] However, if the material after the change is poorly processable, or if the dielectric film has a complex shape, there is a problem in that the manufacturing process for forming the complex-shaped dielectric film becomes complicated.

[0009] As described above, conventional active gas generators have the problem that they do not suppress the dielectric film reaction phenomenon described above, and are unable to generate high-purity active gas without complicating the manufacturing process.

[0010] An object of the present disclosure is to provide an active gas generator that can solve the above-mentioned problems and supply high-purity active gas without complicating the manufacturing process.

[0011] The active gas generator according to the present disclosure is an active gas generator having an electrode unit that activates a raw material gas supplied to a discharge space to generate an active gas, the electrode unit comprising a first electrode configuration portion and a second electrode configuration portion provided below the first electrode configuration portion, the first electrode configuration portion including a first electrode dielectric film and a first electrode conductive film provided on an upper surface of the first electrode dielectric film, and the second electrode configuration portion including a second electrode dielectric film and a second electrode conductive film provided on a lower surface of the second electrode dielectric film, and a dielectric space is formed between the first electrode dielectric film and the second electrode dielectric film. the discharge space includes a main discharge space which is a region in the dielectric space where the first and second electrode conductive films overlap in a plan view, the electrode unit further includes a dielectric protection member provided on the dielectric space side of a dielectric film to be protected which is at least one of the first electrode dielectric film and the second electrode dielectric film, and the constituent material of the dielectric protection member has a protective property of blocking irradiation of the dielectric film to be protected by ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space and not chemically reacting with the ions.

[0012] In the active gas generation device of the present disclosure, a dielectric protection member having the above-described protective properties is present between the dielectric space including the discharge space and the dielectric film to be protected, so that the dielectric film reaction phenomenon in which the dielectric film to be protected reacts with ions when a dielectric barrier discharge occurs in the discharge space can be suppressed.

[0013] As a result, the active gas generating device of the present disclosure can generate high-purity active gas by reliably preventing elements of the dielectric film to be protected, etc., from being mixed into the discharge space due to the dielectric film reaction phenomenon.

[0014] In addition, the electrode unit can be constructed without changing the constituent materials of the dielectric films for the first and second electrodes, by simply adding a dielectric protection member, so the manufacturing process of the electrode unit does not become complicated.

[0015] The objects, features, aspects, and advantages of the present disclosure will become more apparent from the following detailed description and the accompanying drawings.

[0016] FIG. 1 is a plan view schematically showing the planar structure of an activated gas generation apparatus according to a first embodiment of the present disclosure; FIG. 2 is a cross-sectional view showing the cross-sectional structure of the A-A cross section of FIG. 1; FIG. 3 is an explanatory view (part 1) schematically showing the planar structure of an electrode unit; FIG. 4 is an explanatory view showing the cross-sectional structure of the B-B cross section of FIG. 3; FIG. 5 is an explanatory view showing the cross-sectional structure of the C-C cross section of FIG. 5; FIG. 6 is an explanatory view schematically showing the planar structure of a housing; FIG. 7 is an explanatory view schematically showing the cross-sectional structure of a housing; FIG. 8 is an explanatory view schematically showing the planar structure of a high-voltage side dielectric film; FIG. 9 is an explanatory view schematically showing the cross-sectional structure of a high-voltage side dielectric film; FIG. 10 is an explanatory view schematically showing the cross-sectional structure of a ground side dielectric film; FIG. 11 is an explanatory view schematically showing the cross-sectional structure of a ground side dielectric film; FIG. 12 is an explanatory view schematically showing the planar structure of a power feeder; FIG. 13 is an explanatory view schematically showing the cross-sectional structure of a power feeder; FIG. 14 is an explanatory view schematically showing the planar structure of a ground conductor; FIG. 15 is an explanatory view schematically showing the cross-sectional structure of a ground conductor. 27 is an explanatory diagram showing details of a focused region in FIG. 16. FIG. 27 is an explanatory diagram showing typically the planar structure of a cover dielectric film. FIG. 27 is an explanatory diagram showing typically the cross-sectional structure of a cover dielectric film. FIG. 27 is an explanatory diagram showing typically the planar structure of a ground side electrode configuration part. FIG. 27 is an explanatory diagram showing typically the cross-sectional structure of a ground side electrode configuration part. FIG. 27 is an explanatory diagram showing typically the planar structure of a shield dielectric film. FIG. 27 is an explanatory diagram showing typically the cross-sectional structure of a shield dielectric film. FIG. 27 is an explanatory diagram showing typically the planar structure of a dielectric film support member. FIG. 27 is an explanatory diagram showing typically the cross-sectional structure of a dielectric film support member. FIG. 27 is an explanatory diagram showing typically the cross-sectional structure of a dielectric film suppressing member. FIG. 27 is an explanatory diagram showing typically the cross-sectional structure of a pressing member. FIG. 27 is an explanatory diagram showing typically the cross-sectional structure of a pressing member. FIG. 27 is an explanatory diagram showing typically the ejection form of active gas from an electrode unit in an active gas generation device of embodiment 1. Fig. 1 is an explanatory diagram schematically showing an ideal form of active gas ejection in the electrode unit of embodiment 1. Fig. 2 is an explanatory diagram showing a cross-sectional structure of an electrode unit in an active gas generation device of embodiment 2. Fig. 3 is an explanatory diagram (part 1) schematically showing the structure of a ground conductor of embodiment 2. Fig. 4 is an explanatory diagram (part 2) schematically showing the structure of a ground conductor of embodiment 2.44 is an explanatory diagram (part 1) showing a schematic cross-sectional structure of a plurality of gas jetting ports in embodiment 2. FIG. 45 is an explanatory diagram (part 2) showing a schematic cross-sectional structure of a plurality of gas jetting ports in embodiment 2. FIG. 46 is an explanatory diagram (part 1) showing a jetting form of an active gas within an opening of a housing of an electrode unit in embodiment 2. FIG. 47 is an explanatory diagram (part 2) showing a jetting form of an active gas within an opening of a housing of an electrode unit in embodiment 2. FIG. 48 is an explanatory diagram (part 4) showing a jetting form of an active gas within an opening of a housing of an electrode unit in embodiment 2. FIG. 49 is an explanatory diagram (part 5) showing a jetting form of an active gas within an opening of a housing of an electrode unit in embodiment 2. FIG. 49 is an explanatory diagram (part 6) showing a jetting form of an active gas within an opening of a housing of an electrode unit in embodiment 2. FIG. 49 is an explanatory diagram (part 1) showing a schematic cross-sectional structure of a plurality of gas jetting ports in embodiment 2. FIG. 49 is an explanatory diagram (part 2) showing a schematic cross-sectional structure of a plurality of gas jetting ports in embodiment 2. 49 。 FIG. 49 is an explanatory diagram showing a basic aspect of an electrode unit used in an active gas generator according to embodiment 4. FIG. 49 is an explanatory diagram showing a basic aspect of an electrode unit used in an active gas generator according to embodiment 5. FIG. 49 is an explanatory diagram showing a concept of an electrode unit 830 used in an active gas generator according to a second aspect of embodiment 5. FIG. 49 is an explanatory diagram showing a cross-sectional structure of an electrode unit 831 used in an active gas generator according to a second aspect of embodiment 5. FIG. 49 is an explanatory diagram showing a detailed structure of a region of interest in FIG. 49. FIG. 49 is an explanatory diagram showing a planar structure of the dielectric film support member shown in FIG. 49. FIG. 49 is an explanatory diagram showing a basic aspect of an electrode unit used in an active gas generator according to embodiment 6. FIG. 49 is an explanatory diagram showing a basic aspect of an electrode unit used in an active gas generator according to embodiment 7. FIG. 49 is an explanatory diagram (part 1) showing the effect of an active gas generator according to embodiment 7. FIG. 49 is an explanatory diagram (part 2) showing the effect of an active gas generator according to embodiment 7. FIG. 49 is an explanatory diagram (part 3) showing the effect of an active gas generator according to embodiment 7. 57 is an explanatory diagram showing a cross-sectional structure of an electrode unit used in an activated gas generation device according to a second aspect of embodiment 7. FIG. 58 is an explanatory diagram showing details of a region of interest in FIG.59 is an explanatory diagram showing a cross-sectional structure of an activated gas generation device according to a first and second aspect of embodiment 8. FIG. 60 is an explanatory diagram showing a detailed structure of a region of interest in FIG. 59 in a first aspect of embodiment 8. FIG. 61 is an explanatory diagram showing a detailed structure of a region of interest in FIG. 59 in a second aspect of embodiment 8.

[0017] First Embodiment FIG. 1 is a plan view schematically showing the planar structure of an activated gas generator 71 according to a first embodiment of the present disclosure.

[0018] As shown in the figure, in an active gas generator 71, three electrode units 51 to 53 are housed in a housing 1. A source gas G1 is supplied to each of the electrode units 51 to 53 via a gas flow path 21. Each of the electrode units 51 to 53 activates the source gas G1 supplied to the discharge space 4 to generate an active gas G2.

[0019] Fig. 2 is a cross-sectional view showing the cross-sectional structure taken along line A-A in Fig. 1. Figs. 3 to 6 are explanatory views partially explaining the structure of the electrode unit 50. The electrode unit 50 corresponds to any one of the electrode units 51 to 53. The electrode units 51 to 53 have the same structure.

[0020] Fig. 3 is an explanatory diagram showing a schematic planar structure of the electrode unit 50. Fig. 4 is an explanatory diagram showing the cross-sectional structure taken along line B-B in Fig. 3. Figs. 3 and 4 are first explanatory diagrams showing the structure of the ground conductor 6 and its surroundings.

[0021] Fig. 5 is an explanatory diagram showing a schematic planar structure of the electrode unit 50. Fig. 6 is an explanatory diagram showing the cross-sectional structure taken along the line CC in Fig. 5. Figs. 5 and 6 are second explanatory diagrams showing the detailed structure of the ground conductor 6 and its surroundings.

[0022] 7 to 30 are explanatory diagrams showing details of the components of the electrode unit 50. Figures 7 and 8 are explanatory diagrams showing a schematic structure of the housing 1. Figure 7 shows the planar structure of the housing 1, and Figure 8 shows the cross-sectional structure of the housing 1.

[0023] 9 and 10 are explanatory diagrams each showing a schematic structure of the high-voltage side dielectric film 2. Fig. 9 shows the planar structure of the high-voltage side dielectric film 2, and Fig. 10 shows the cross-sectional structure of the high-voltage side dielectric film 2.

[0024] 11 and 12 are explanatory diagrams each showing a schematic structure of the ground side dielectric film 3. Fig. 11 shows the planar structure of the ground side dielectric film 3, and Fig. 12 shows the cross-sectional structure of the ground side dielectric film 3.

[0025] 13 and 14 are explanatory diagrams each showing a schematic structure of the power feeder 5. Fig. 13 shows the planar structure of the power feeder 5, and Fig. 14 shows the cross-sectional structure of the power feeder 5.

[0026] 15 to 17 are explanatory diagrams each showing a schematic structure of the ground conductor 6. Fig. 15 shows the planar structure of the ground conductor 6, Fig. 16 shows the cross-sectional structure of the ground conductor 6, and Fig. 17 shows details of a region of interest R1 in Fig. 16.

[0027] 18 and 19 are explanatory views each showing a schematic structure of the cover dielectric film 8. Fig. 18 shows the planar structure of the cover dielectric film 8, and Fig. 19 shows the cross-sectional structure of the cover dielectric film 8.

[0028] 20 and 21 are explanatory diagrams each showing a schematic structure of the ground-side electrode configuration portion E2. Fig. 20 shows the planar structure of the ground-side electrode configuration portion E2, and Fig. 21 shows the cross-sectional structure of the ground-side electrode configuration portion E2. The ground-side electrode configuration portion E2 includes a combined structure of a ground-side dielectric film 3, a conductive film 7, and a cover dielectric film 8.

[0029] 22 and 23 are explanatory diagrams each showing a schematic structure of the shielding dielectric film 9. Fig. 22 shows the planar structure of the shielding dielectric film 9, and Fig. 23 shows the cross-sectional structure of the shielding dielectric film 9.

[0030] 24 and 25 are explanatory diagrams each showing a schematic structure of the dielectric film support member 10. Fig. 24 shows the planar structure of the dielectric film support member 10, and Fig. 25 shows the cross-sectional structure of the dielectric film support member 10.

[0031] 26 to 28 are explanatory diagrams each showing a schematic structure of the dielectric film suppressing member 11. Fig. 26 shows the planar structure of the dielectric film suppressing member 11, Fig. 27 shows the cross-sectional structure of the dielectric film suppressing member 11, and Fig. 28 shows the details of the focused region R2 in Fig. 27.

[0032] 29 and 30 are explanatory diagrams each showing a schematic structure of the pressing member 12. Fig. 29 shows the planar structure of the pressing member 12, and Fig. 30 shows the cross-sectional structure of the pressing member 12.

[0033] 1 to 30 each schematically show the activated gas generator 71, the electrode unit 50, or the components of the electrode unit 50, and the shapes, including the scale, do not necessarily match between Figures 1 to 30. Also, an XYZ Cartesian coordinate system is depicted in each of Figures 1 to 30.

[0034] The activated gas generator 71 of the first embodiment will be described below with reference to the above-mentioned FIGS. 1 to 30 as appropriate.

[0035] (Overall Structure) As shown in FIG. 1, the activated gas generator 71 includes a plurality of electrode units 51 to 53, and a conductive housing 1 that houses the electrode units 51 to 53 in an internal housing space S1 (see FIG. 8).

[0036] As shown in FIGS. 2 and 7, the housing 1 has a housing bottom 1a including a flat surface 1F and a conductor accommodating space 6S recessed in the depth direction from the flat surface 1F.

[0037] As shown in Figure 8, the housing 1 has a housing bottom 1a, a housing side 1b, and a housing top 1c, and the housing bottom 1a, the housing side 1b, and the housing top 1c form an internal housing space S1 that houses the electrode units 51 to 53 inside.

[0038] The electrode units 51 to 53 are housed in the housing interior space S1 of the housing 1 with the ground conductor 6 disposed in the conductor accommodating space 6S. As shown in Fig. 7, a source gas G1 supplied from the outside is supplied via a gas flow path 21 provided in the housing bottom 1a to source gas flow spaces provided on the underside and side surfaces of the ground conductor 6 disposed in the conductor accommodating space 6S.

[0039] The electrode unit 51 (50) includes a high-voltage side electrode component E1, which is a first electrode component, and a ground side electrode component E2, which is a second electrode component provided below the high-voltage side electrode component E1.

[0040] The electrode unit 51 is provided below the ground-side electrode component E2, which is the second electrode component, and further includes a ground conductor 6, which is a reference potential conductor housed in the conductor housing space 6S. The ground conductor 6 is made of a conductor such as a metal.

[0041] The high-voltage side electrode configuration part E1, which is the first electrode configuration part, includes a high-voltage side dielectric film 2, which is the first electrode dielectric film, and a power supply body 5, which is the first electrode conductive film formed on the upper surface of the high-voltage side dielectric film 2. The power supply body 5, which is the first electrode conductive film, is provided on a power supply body placement recess 28 provided in the center of the high-voltage side dielectric film 2, which is the first electrode dielectric film.

[0042] The high-voltage side dielectric film 2 is made of a dielectric material, and the power feeder 5 is made of a conductor such as a metal. For example, the power feeder 5 is made of metal.

[0043] The ground-side electrode configuration portion E2 includes a ground-side dielectric film 3 which is a dielectric film for the second electrode, and a conductive film 7 which is a conductive film for the second electrode formed on the lower surface of the ground-side dielectric film 3. Note that since the conductive film 7 is thin, it is not shown in Figure 2 and the like, and the formation region of the conductive film 7 is shown in Figures 20 and 21.

[0044] The ground side dielectric film 3 is made of a dielectric material, and the conductive film 7 is made of a conductor such as a metal.

[0045] The ground conductor 6, which is a reference potential conductor, has a non-penetrating active gas buffer space 68 at its upper part, and the ground-side electrode component E2 is disposed so as to close the active gas buffer space 68. Therefore, outside the active gas buffer space 68, the lower surface of the conductive film 7 and the upper surface of the ground conductor 6 are in contact with each other.

[0046] The ground-side dielectric film 3, which is the dielectric film for the second electrode, has a dielectric through-hole 3h penetrating the ground-side dielectric film 3 in a region overlapping with the active gas buffer space 68 in a planar view, and the conductive film 7, which is the conductive film for the second electrode, has a conductive film opening 7h in a region overlapping with the active gas buffer space 68 in a planar view, and the conductive film opening 7h overlaps with the dielectric through-hole 3h in a planar view.

[0047] The housing bottom 1a of the housing 1 has a gas flow path 21 that receives the source gas G1 from the outside, and a source gas circulation space is provided between the ground conductor 6 and the conductor accommodating space 6S of the housing 1. The source gas circulation space includes a source gas buffer space 61, a slit space 62, and a side space 63, as will be described later.

[0048] The source gas G1 is introduced into the main discharge space of the discharge space 4 via the gas flow path 21 and the source gas flow space. As will be described later, the main discharge space refers to the discharge space 4 within the dielectric space 18 between the high-voltage side dielectric film 2 and the ground-side dielectric film 3.

[0049] An AC voltage is applied from an AC power source 15 to the power supply 5, which is the conductive film for the first electrode, via electrical connection means such as electrical wiring or lead-in terminals. Note that the electrical connection means is not shown in Figure 2 and other figures.

[0050] On the other hand, the housing 1 is set to the ground potential, which is the reference potential, and therefore the conductive film 7, which is the conductive film for the second electrode, is set to the ground potential via the housing 1 and the ground conductor 6.

[0051] The electrode unit 51 (50) further includes auxiliary members such as a dielectric film support member 10, a dielectric film suppression member 11, and a pressing member 12.

[0052] (Fixing of high-voltage-side dielectric film 2) The step portion 102 of the dielectric film support member 10 is provided on the flat surface 1F of the housing 1, and has an upper surface that serves as a support surface 10F that supports from below the high-voltage-side dielectric film 2. In this case, the dielectric film support member 10 is placed on the flat surface 1F so that the side surface of the dielectric film support member 10 coincides with the side surface of the conductor accommodating space 6S of the housing bottom 1a of the housing 1.

[0053] The dielectric film suppressing member 11 is a member for suppressing the high-voltage side dielectric film 2 from above, and does not overlap with the power feeder 5 in plan view. In other words, an exposed area EX2 exists on the upper surface of the high-voltage side dielectric film 2, where the dielectric film suppressing member 11 and the power feeder 5 are not formed.

[0054] 6, 27 and 28, the bottom surface of the dielectric film suppressing member 11 has a dielectric contact region 112 that contacts the top surface of the high-voltage side dielectric film 2 and a dielectric non-contact region 111 that does not contact the top surface of the high-voltage side dielectric film 2. The dielectric contact region 112 is a region that contacts the high-voltage side dielectric film 2 and applies a load, while the dielectric non-contact region 111 is not in contact with the high-voltage side dielectric film 2 and is a region that protrudes from the top surface of the high-voltage side dielectric film 2 toward the power feeder 5.

[0055] In plan view, the dielectric contact region 112 overlaps with the peripheral region of the high-voltage side dielectric film 2 and the support surface 10F of the dielectric film support member 10, while the dielectric non-contact region 111 overlaps with the middle region located inside the peripheral region of the high-voltage side dielectric film 2. In other words, the middle region is the region adjacent to the power feeder 5 side of the peripheral region of the high-voltage side dielectric film 2.

[0056] The dielectric film suppressing member 11 is made of metal or the like, has conductivity, and is set to the ground potential, which is the reference potential, via the housing 1, the mounting bolt 31, and the pressing member 12. The mounting bolt 31 and the pressing member 12 are also conductive.

[0057] Therefore, the high voltage side dielectric film 2 is pressed down from above by the dielectric film suppressing member 11 in the dielectric contact area 112. The combined structure of the dielectric film supporting member 10, the dielectric film suppressing member 11 and the pressing member 12 will be described in detail below.

[0058] As shown in FIG. 2, the pressing member 12 is placed on the upper surface of the dielectric film support member 10 , and the pressing member 12 and the dielectric film support member 10 are fixed onto the housing bottom 1 a of the housing 1 by mounting bolts 31 .

[0059] 24 and 25, the dielectric film support member 10 has a circular shape with a central opening 100 in the center in a plan view. A step structure consisting of a step portion 102 and a peripheral upper surface 101 is provided in an annular shape around the central opening 100. The upper surface of the step portion 102 forms the support surface 10F. A plurality of through holes 10h are provided in a circular pattern on the peripheral upper surface 101 on the outer periphery of the step portion 102 (support surface 10F).

[0060] 9 and 10 , the high-voltage side dielectric film 2 has a circular shape in plan view with a power feeder placement recess 28 in the center. A peripheral surface region 27 is provided in an annular shape around the power feeder placement recess 28. The high-voltage side dielectric film 2 also has a circular recess bottom surface 26 in plan view, and the bottom surface around the recess bottom surface 26 becomes a circular convex bottom surface 23 in plan view.

[0061] 13 and 14, the power feeder 5 has a cylindrical shape. The power feeder 5 is placed on the upper surface of the high-voltage side dielectric film 2 with the bottom surface of the power feeder 5 positioned on the power feeder placement recess 28 of the high-voltage side dielectric film 2.

[0062] An AC voltage is applied to the power supply 5, which is the conductive film for the first electrode, from an AC power source 15. As shown in Fig. 5, the power supply arrangement recess 28 includes the power supply 5 in a plan view and has a planar shape that is slightly wider than the power supply 5.

[0063] The high-voltage side dielectric film 2 is placed on the dielectric film support member 10 in such a manner that the support surface 10F of the dielectric film support member 10 contacts the bottom surface 23 of the convex portion of the high-voltage side dielectric film 2. The high-voltage side dielectric film 2 and the dielectric film support member 10 are in contact with each other via a sealing material such as an O-ring (not shown).

[0064] 26 and 27 , the dielectric film suppressing member 11 has a circular shape in plan view with a central opening 110 at the center. The annular lower surface region provided on the outer periphery of the central opening 110 is the dielectric non-contact region 111, and the annular lower surface region provided on the outer periphery of the dielectric non-contact region 111 is the dielectric contact region 112.

[0065] 28 , the dielectric contact region 112 protrudes downward (in the −Z direction) from the dielectric non-contact region 111, and is in contact with the upper surface U2 of the high-voltage side dielectric film 2. On the other hand, a gap SP11 exists between the dielectric non-contact region 111 and the upper surface U2 of the high-voltage side dielectric film 2, and therefore the dielectric non-contact region 111 is not in contact with the upper surface U2 of the high-voltage side dielectric film 2.

[0066] 29 and 30 , the pressing member 12 has a circular shape in a plan view with a central opening 120 at the center. A plurality of inner through-holes 121 h are provided in a circular pattern in an outer peripheral region 125 on the outer periphery of the central opening 120, and a plurality of outer through-holes 122 h are provided in a circular pattern on the outer periphery of the plurality of inner through-holes 121 h.

[0067] In this way, a plurality of inner through holes 121h and a plurality of outer through holes 122h are provided in the outer peripheral region 125 of the pressing member 12. Each of the plurality of inner through holes 121h is a tapped through hole.

[0068] A portion of the outer peripheral region 125 of the pressing member 12 having the above-described structure is placed on the dielectric film support member 10, and the dielectric film support member 10 and the pressing member 12 are fixed to the housing bottom 1a of the housing 1 by a plurality of mounting bolts 31. The threaded portions of the plurality of mounting bolts 31 pass through the plurality of outer through-holes 122h and the plurality of through-holes 10h and are attached to the housing bottom 1a.

[0069] As shown in FIGS. 2 to 6, the pressing member 12 is disposed in a region overlapping with the dielectric film supporting member 10 and the dielectric film suppressing member 11 in plan view.

[0070] On the other hand, a plurality of suppression auxiliary members 32 are attached to the pressing member 12 in a manner that they pass through a plurality of inner through-holes 121h of the pressing member 12. Bolts, setscrews, etc. are conceivable as the suppression auxiliary members 32. The plurality of suppression auxiliary members 32 are attached within the plurality of inner through-holes 121h so as to press the dielectric film suppressing member 11. The plurality of suppression auxiliary members 32 are provided at positions that overlap the dielectric contact region 112 of the dielectric film suppressing member 11 and the convex bottom surface 23 of the high-voltage-side dielectric film 2 in plan view.

[0071] Therefore, the dielectric film suppressing member 11 , which receives the pressing force of the plurality of auxiliary suppressing members 32 , suppresses the high voltage side dielectric film 2 from the upper dielectric contact region 112 .

[0072] As described above, in the electrode unit 50 of the active gas generator 71 of the first embodiment, the high-voltage side dielectric film 2, which is the first electrode dielectric film, is pressed from the upper dielectric contact area 112 by the dielectric film suppressing member 11, which receives the pressing force of the multiple suppression auxiliary members 32. Therefore, the area where the load is applied to the high-voltage side dielectric film 2 by the dielectric film suppressing member 11 can be limited to only the area below the dielectric contact area 112.

[0073] As a result, the active gas generating device 71 of embodiment 1 can stably fix the high-pressure side dielectric film 2 between the dielectric contact area 112 of the dielectric film suppressing member 11 and the support surface 10F of the dielectric film support member 10 without applying unnecessary bending stress to the high-pressure side dielectric film 2.

[0074] The dielectric film suppressing member 11 is set to a ground potential, which is a reference potential, and is conductive. The dielectric non-contact region 111 of the dielectric film suppressing member 11 overlaps with the intermediate region of the high-voltage side dielectric film 2 in plan view.

[0075] Therefore, the electrode unit 50 can reduce the electric field strength of the power supply 5 by using the dielectric film suppression member 11 having the dielectric non-contact area 111, thereby lowering the potential in the intermediate area of ​​the high-voltage side dielectric film 2, thereby lowering the potential in the outer diameter direction between the high-voltage side dielectric film 2 and the ground side dielectric film 3.

[0076] As a result, the electrode unit 50 in the activated gas generator 71 of the first embodiment can reliably prevent dielectric breakdown in the gap 20 between the high-voltage side dielectric film 2 and the dielectric film support member 10 .

[0077] (Grounding conductor 6) As shown in Figures 15 to 17, the grounding conductor 6 accommodated in the conductor accommodating space 6S of the housing 1 is circular in plan view and has a raw material gas buffer space 61 and a slit space 62 in the end region of the bottom surface.

[0078] The raw material gas buffer space 61 is formed in a flat, annular shape, and is connected to the gas flow path 21 as shown in FIG. 2, so that the raw material gas G1 supplied from the outside can be taken into the raw material gas buffer space 61 via the gas flow path 21.

[0079] A plurality of slit spaces 62 are provided at intervals around the source gas buffer space 61. As shown in Fig. 17 , the plurality of slit spaces 62 are each connected to the source gas buffer space 61, and the source gas G1 can be circulated from the source gas buffer space 61 to the slit spaces 62.

[0080] As shown in FIGS. 6 and 17, the side space 63 is a gap space between the inner peripheral side surface of the conductor accommodating space 6S and the outer peripheral side surface of the ground conductor 6, and is provided in a circular ring shape in plan view.

[0081] Since the dielectric film support member 10 and the ground conductor 6 have the positional relationship shown in Figures 3 and 4, the raw material gas G1 that passes through the side space 63 is supplied to the lower side region R10 of the dielectric film support member 10.

[0082] In this manner, the source gas buffer space 61 is provided on the lower surface side of the ground conductor 6, and receives the source gas G1 via the gas flow path 21. The plurality of slit spaces 62 are each provided on the lower surface side of the ground conductor 6, and are connected to the source gas buffer space 61.

[0083] The side space 63 is provided on the side surface of the ground conductor 6 and is connected to the plurality of slit spaces 62. As described above, the source gas flow space includes the source gas buffer space 61, the plurality of slit spaces 62, and the side space 63.

[0084] Therefore, the source gas G 1 supplied from the outside to the gas flow path 21 is guided to the discharge space 4 via the source gas buffer space 61 , the slit space 62 and the side space 63 .

[0085] Each of the plurality of slit spaces 62 is set to a narrow space through which the source gas does not easily flow compared to the source gas buffer space 61, so that the source gas G1 temporarily stays in the source gas buffer space 61 and then flows into each of the plurality of slit spaces 62. That is, the plurality of slit spaces 62 have a smaller conductance, which is a coefficient representing the ease of flow of the source gas G1, compared to the source gas buffer space 61 and the side space 63.

[0086] As a result, the active gas generator 71 of the first embodiment can spatially uniformly supply the source gas G1 to the discharge space 4. That is, the source gas G1 is supplied uniformly from the peripheral portion of the circular dielectric space 18 in plan view toward the central discharge space 4.

[0087] By reducing the conductance of the slit spaces 62, the pressure difference between the source gas buffer space 61 and the side space 63 increases, and the variation in the flow rate of the source gas G1 flowing through each of the multiple slit spaces 62 is reduced. Therefore, the source gas G1 is uniformly supplied toward the discharge space 4. The flow rate of the source gas G1 is adjusted by, for example, a mass flow controller (MFC) or the like provided upstream of the gas flow path 21.

[0088] Therefore, in a typical activated gas generator, if the source gas G1 is not supplied uniformly, the time it takes for the source gas G1 to pass through the discharge space 4 changes, resulting in a problem of a deterioration in the efficiency of generating the activated gas G2. The activated gas generator 71 of the first embodiment can supply the source gas G1 uniformly, so the above-mentioned problem does not occur.

[0089] (Ground-Side Electrode Configuration E2 and Active Gas Buffer Space 68) As described above, the ground-side electrode configuration E2, which is the second electrode configuration, includes the ground-side dielectric film 3 and the conductive film 7.

[0090] As shown in FIGS. 11 and 12, the ground-side dielectric film 3 has a circular shape in plan view, and has a circular dielectric through-hole 3h in the center.

[0091] 18 and 19, the cover dielectric film 8 is circular in plan view and has a circular cover through-hole 8h in the center. It is desirable that the cover dielectric film 8 is made of the same material as the ground-side dielectric film 3. This is to prevent distortion when the thermal expansion coefficients of the cover dielectric film 8 and the ground-side dielectric film 3 differ. Alternatively, materials with similar thermal expansion coefficients may be selected as the materials for the cover dielectric film 8 and the ground-side dielectric film 3.

[0092] As shown in FIGS. 20 and 21, the conductive film 7 has a circular shape in plan view, and has a conductive film opening 7h in the center that is also circular in plan view.

[0093] The dielectric through hole 3h and the conductive film opening 7h each overlap with the active gas buffer space 68 in plan view, and as shown in FIG. 21, the conductive film opening 7h includes the dielectric through hole 3h in plan view and has a shape wider than the dielectric through hole 3h.

[0094] The conductive film 7 is provided on the lower surface of the ground-side dielectric film 3 in such a manner that the centers of the ground-side dielectric film 3 and the conductive film 7 are aligned. The diameter of the conductive film 7 is set to be approximately the same as that of the ground-side dielectric film 3, but the formation area of ​​the conductive film 7 is smaller than the formation area of ​​the ground-side dielectric film 3 because a conductive film opening 7h wider than the dielectric through-hole 3h is provided in the center.

[0095] The conductive film inner boundary 7e, which is the circumferential outer periphery of the conductive film opening 7h, is the end of the conductive film 7 on the dielectric through-hole 3h side, and the conductive film 7 is not formed in the region inside the conductive film inner boundary 7e. The conductive film inner boundary 7e is the electrode boundary line of the conductive film 7. Therefore, as shown in Figure 21, the formation region A7 of the conductive film 7 on the lower surface of the ground-side dielectric film 3 is the region from the outer periphery of the ground-side dielectric film 3 to the conductive film inner boundary 7e.

[0096] 20 and 21 , the cover dielectric film 8 is provided in a circular shape from above the lower surface of the ground-side dielectric film 3 to above the lower surface of the conductive film 7, including the conductive film inner boundary 7e. However, the cover dielectric film 8 has a cover through-hole 8h at its center. That is, the outer diameter of the conductive film opening 7h of the conductive film 7 is shorter than the outer diameter of the cover dielectric film 8.

[0097] The cover through hole 8h has a shape similar to that of the dielectric through hole 3h, and is included in the conductive film opening 7h, but has a narrower shape than the conductive film opening 7h. Therefore, the cover dielectric film 8 covers the conductive film inner boundary 7e (electrode boundary line) of the conductive film 7. The lower surface of the conductive film 7, which is not covered by the cover dielectric film 8, and the upper surface of the ground conductor 6 are in contact with each other.

[0098] As shown in Figures 15 and 16, the active gas buffer space 68 provided above the ground conductor 6 has a circular shape in a plan view, and a plurality of gas outlets 69 are provided around the periphery of the bottom surface 65 of the active gas buffer space 68.

[0099] 15 and 16 also show the formation region of the cover dielectric film 8. As shown in these figures, the outer periphery of the cover dielectric film 8 is substantially the same as the outer periphery of the buffer space 68 for active gas.

[0100] As shown in FIGS. 2 and 16, a shielding dielectric film 9 is provided on the bottom surface 65 of the active gas buffer space 68 .

[0101] As shown in FIGS. 22 and 23, the shielding dielectric film 9 is formed to a predetermined film thickness and has a circular shape in plan view.

[0102] The shielding dielectric film 9 is provided on the bottom surface 65 of the active gas buffer space 68 in such a manner that the centers of the active gas buffer space 68 and the shielding dielectric film 9 are aligned with each other.

[0103] As shown in FIGS. 15 and 16, the gas ejection holes 69 overlap with the cover dielectric film 8 in plan view, but do not overlap with the dielectric through holes 3h and the cover through holes 8h in plan view.

[0104] 16 , a plurality of gas outlets 69 are provided around the bottom surface 65 of the active gas buffer space 68, penetrating the ground conductor 6. That is, the plurality of gas outlets 69 are provided in the peripheral region of the shielding dielectric film 9 in plan view.

[0105] In the activated gas generator 71 of the first embodiment having such a structure, the source gas G1 is supplied from the outside of the metal housing 1 to the discharge space 4 via the gas flow path 21 and the source gas flow space, as described above.

[0106] When the source gas G1 is supplied to the discharge space 4 in which the dielectric barrier discharge is occurring, the source gas G1 is activated to become an active gas G2, which passes through the dielectric through-hole 3h and the cover through-hole 8h and is introduced into the active gas buffer space 68. The active gas G2 that has entered the active gas buffer space 68 passes through a plurality of gas outlets 69 provided on the bottom surface of the active gas buffer space 68 and is supplied to a subsequent processing space.

[0107] In the active gas generator 71 of the first embodiment having such a configuration, the main dielectric space where the high-voltage side dielectric film 2, which is the dielectric film for the first electrode, and the ground-side dielectric film 3, which is the dielectric film for the second electrode, face each other is the dielectric space 18. The dielectric space 18 is circular in plan view. The space where the high-voltage side dielectric film 2 and the shield dielectric film 9 face each other is defined as the auxiliary dielectric space. The discharge space 4 includes a main discharge space where the power feeder 5 and the conductive film 7 overlap each other in plan view within the dielectric space 18.

[0108] In order to form the above-mentioned main discharge space, the high-voltage side dielectric film 2 and the ground-side dielectric film 3 are arranged in correspondence with each other so as to be at a certain distance in the height direction (Z direction), and the above-mentioned main discharge space of the discharge space 4 exists in the dielectric space 18 between the high-voltage side dielectric film 2 and the ground-side dielectric film 3.

[0109] The discharge space 4 further includes an auxiliary discharge space 44 formed within the auxiliary dielectric space by the dielectric through hole 3 h, the cover through hole 8 h, and a part of the active gas buffer space 68 on the shield dielectric film 9 .

[0110] The bottom surface area below the bottom surface 65 of the ground conductor 6 is used as a conductive film for the ground electrode set at ground potential, and a discharge voltage is applied between the power supply 5, which receives an AC voltage from the AC power source 15, and the conductive film for the ground electrode, thereby generating an auxiliary discharge space 44.

[0111] As described above, the auxiliary discharge space 44 includes the dielectric through hole 3h, the cover through hole 8h, and part of the active gas buffer space 68. Thus, the discharge space 4 formed in the first embodiment includes the main discharge space in the dielectric space 18 and the auxiliary discharge space 44.

[0112] In the active gas generator 71 of the first embodiment, the paths from the auxiliary discharge space 44 to the plurality of gas outlets 69 are defined as active gas flow paths.

[0113] In the active gas generating device 71 of embodiment 1, the auxiliary discharge space 44, which is part of the discharge space 4, includes the dielectric through hole 3h, the cover through hole 8h, and part of the buffer space 68 for the active gas, so that the volume of the active gas flow path from the auxiliary discharge space 44 to the multiple gas outlets 69 can be kept to the minimum necessary, thereby suppressing the amount of deactivation of the active gas G2.

[0114] Furthermore, the cover dielectric film 8 in the ground side electrode configuration portion E2 of the electrode unit 50 covers the conductive film inner boundary 7e, which is the electrode boundary line of the conductive film 7, within the active gas buffer space 68, and overlaps with multiple gas outlets 69 in a planar view, thereby suppressing the surface deactivation phenomenon in which the active gas G2 disappears as the active gas G2 collides with the conductive film 7.

[0115] As a result, the activated gas generating device 71 of the first embodiment can supply a high concentration activated gas G2 from the plurality of gas outlets 69 to the downstream processing space.

[0116] The electrode unit 50 of the first embodiment has the above-described structure, and therefore the only components facing the discharge space 4 are those made of dielectric materials, which are insulators (high-voltage side dielectric film 2, ground side dielectric film 3, cover dielectric film 8, and shield dielectric film 9). When metal materials face the discharge, they are easily ionized, and metal ions are contained in the gas, causing contamination.

[0117] 2, the housing bottom 1a of the housing 1 has a housing opening 41. The housing opening 41 is provided in a region that overlaps with the active gas buffer space 68 in a plan view, and penetrates the housing bottom 1a.

[0118] Therefore, the active gas G2 ejected from the plurality of gas ejection ports 69 is guided to the processing space below through the housing opening 41.

[0119] As shown in FIG. 2, the housing opening 41 provided in the housing bottom 1a has an opening area that increases downward, and has a tapered shape with a lowermost outer peripheral edge 41L, as shown in FIGS. 2 and 7.

[0120] In the activated gas generator 71 of the first embodiment, the housing opening 41 provided in the housing bottom 1a of the housing 1 has a tapered shape in which the opening area becomes wider as it goes downward.

[0121] Therefore, the active gas generating apparatus 71 of embodiment 1 can minimize losses caused by the active gas G2 ejected from the multiple gas outlets 69 colliding with the bottom 1a of the housing, and can supply a high concentration of active gas G2 to the processing space below.

[0122] <Embodiment 2> (Issues of Embodiment 1) In the active gas generation apparatus 71 of the above-described embodiment 1, the active gas G2 is supplied from the active gas buffer space 68 to a downstream processing space located below via a plurality of gas outlets 69. In the following description, the active gas G2 from the plurality of gas outlets 69 is defined as a plurality of partially activated gases.

[0123] Figure 31 is an explanatory diagram that schematically shows the form of ejection of active gas G2 from electrode unit 50 (51 to 53) in active gas generator 71 of embodiment 1. Figure 32 is an explanatory diagram that schematically shows the ideal form of ejection of active gas G2 in electrode unit 50. Figures 31 and 32 correspond to, for example, the A-A cross section in Figure 1. Each of Figures 31 and 32 depicts an XYZ Cartesian coordinate system.

[0124] As shown in Figure 31, in the electrode unit 50 (51 to 53) provided in the activated gas generation device 71 of embodiment 1, the multiple gas outlets 69 are arranged in a manner that they move farther apart from each other as they go downward so as to prevent collisions between the multiple partially activated gases.

[0125] However, if the space pressure p0 in the active gas buffer space 68 is significantly different from the space pressure p1 in the subsequent processing space, for example, if {(p1 / p0)<0.5}, the multiple partially activated gases ejected from the multiple gas ejection ports 69 will flow in only one direction, called a choke flow, as shown by the gas flow FGX in Figure 31, and the multiple partially activated gases will each proceed in a straight line without diffusing.

[0126] The active gas generating apparatus 71 of embodiment 1 has a structure in which multiple gas outlets 69 are provided for each electrode unit 50 in order to supply a uniform active gas G2 to the downstream processing space, and further, in order to supply the active gas G2 to a processing space having a relatively wide area, multiple electrode units 50 are provided as electrode units 51 to 53.

[0127] However, the multiple partially activated gases ejected from each electrode unit 50 are each supplied to the processing space in the linear gas flow FGX shown in FIG. 31, and do not become the multi-directionally diffused gas flow FGY shown in FIG. 32.

[0128] As described above, the partially activated gas ejected from each of the gas ejection ports 69 of the electrode unit 50 basically has only one directionality, and therefore the activated gas generation apparatus 71 of the first embodiment has a problem in that it is not possible to supply a uniform activated gas G2 to the processing space.

[0129] The activated gas generator 75 of the second embodiment described below aims to supply a uniform activated gas G2.

[0130] (Structure of Embodiment 2) Fig. 33 is an explanatory diagram showing the cross-sectional structure of an electrode unit 55 in an activated gas generator 75 of Embodiment 2. An XYZ orthogonal coordinate system is shown in the drawing.

[0131] The overall configuration of the active gas generator 75 is similar to that of the active gas generator 71 shown in Fig. 1. Therefore, the electrode unit 55 shown in Fig. 33 corresponds to any one of the electrode units 51 to 53 in the active gas generator 75 having the overall configuration shown in Fig. 1.

[0132] That is, the active gas generator 75 of embodiment 2, like the active gas generator 71 of embodiment 1, comprises a plurality of electrode units, ie, electrode units 51 to 53, and a conductive housing 1 that houses the electrode units 51 to 53 in an internal housing space S1 (see Figure 8).

[0133] The electrode unit 55 of the second embodiment is characterized in that the ground conductor 6 of the electrode unit 50 of the first embodiment is replaced with a ground conductor 60 .

[0134] The following description will focus on the features of the electrode unit 55 of the second embodiment, with the same components as those of the electrode unit 50 of the first embodiment being given the same reference numerals.

[0135] 33, the electrode unit 55 is provided below the ground-side electrode component E2 including the ground-side dielectric film 3, and includes a ground conductor 60 which is a reference potential conductor accommodated in the conductor accommodating space 6S. The ground conductor 60 is made of a conductor such as metal.

[0136] The electrode unit 55 of the second embodiment is accommodated in the housing internal space S1 of the housing 1 in such a manner that the ground conductor 60 is disposed in the conductor accommodating space 6S. The source gas G1 supplied from the outside is supplied via a gas flow path 21 provided in the housing bottom 1a to source gas flow spaces provided on the underside and side surfaces of the ground conductor 60 disposed in the conductor accommodating space 6S.

[0137] (Ground conductor 60) Figures 34 and 35 are explanatory diagrams each showing a schematic structure of the ground conductor 60. Figure 34 shows the planar structure of the ground conductor 60, and Figure 35 shows the cross-sectional structure of the ground conductor 60. Each of Figures 34 and 35 shows an XYZ Cartesian coordinate system.

[0138] The ground conductor 60, which is a reference potential conductor, has a non-penetrating active gas buffer space 68 at its upper part, and the ground-side electrode component E2 including the ground-side dielectric film 3 is disposed so as to close the active gas buffer space 68. Therefore, outside the active gas buffer space 68, the lower surface of the conductive film 7 and the upper surface of the ground conductor 60 are in contact with each other.

[0139] As in the first embodiment, the housing 1 is set to the ground potential, which is the reference potential, and therefore the conductive film 7 is set to the ground potential via the housing 1 and the ground conductor 60.

[0140] The ground conductor 60 accommodated in the conductor accommodating space 6S of the housing 1 is circular in plan view, as shown in FIG. 34, and has a raw material gas buffer space 61 and a slit space 62 in the end region of the bottom surface.

[0141] Similar to the ground conductor 6 in the first embodiment, a source gas flow space including a source gas buffer space 61 , a plurality of slit spaces 62 and a side space 63 is provided for the ground conductor 60 .

[0142] Therefore, the source gas G 1 supplied from the outside to the gas flow path 21 is guided to the discharge space 4 via the source gas buffer space 61 , the slit space 62 and the side space 63 .

[0143] Therefore, the active gas generator 75 of the second embodiment can supply the source gas G1 to the discharge space 4 spatially uniformly, similar to the active gas generator 71 of the first embodiment.

[0144] As shown in Figures 34 and 35, the active gas buffer space 68 provided above the ground conductor 60 is circular in plan view, and multiple gas outlets 70 are provided around the bottom surface 65 of the active gas buffer space 68.

[0145] Similar to the gas outlets 69 of the first embodiment, the gas outlets 70 overlap the cover dielectric film 8 in plan view, but do not overlap the dielectric through hole 3h and the cover through hole 8h in plan view.

[0146] 33 to 35, a plurality of gas outlets 70 are provided around the bottom surface 65 of the active gas buffer space 68, penetrating the ground conductor 60. That is, the plurality of gas outlets 70 are provided in the peripheral region of the shielding dielectric film 9 in plan view.

[0147] When the source gas G1 is supplied to the discharge space 4 in which the dielectric barrier discharge is occurring, the source gas G1 is activated to become an active gas G2, which passes through the dielectric through-hole 3h and the cover through-hole 8h and is introduced into the active gas buffer space 68. The active gas G2 that has entered the active gas buffer space 68 passes through a plurality of gas outlets 70 provided on the bottom surface of the active gas buffer space 68 and is supplied to a subsequent processing space.

[0148] In the active gas generator 75 of the second embodiment, the paths from the auxiliary discharge space 44 to the plurality of gas outlets 70 are defined as active gas flow paths.

[0149] In the active gas generating device 75 of embodiment 2, the auxiliary discharge space 44, which is part of the discharge space 4, includes the dielectric through hole 3h, the cover through hole 8h, and part of the buffer space 68 for the active gas, so that the volume of the active gas flow path from the auxiliary discharge space 44 to the multiple gas outlets 70 can be kept to the minimum necessary, thereby suppressing the amount of deactivation of the active gas G2.

[0150] Furthermore, the cover dielectric film 8 in the ground side electrode configuration portion E2 of the electrode unit 55 covers the conductive film inner boundary 7e, which is the electrode boundary line of the conductive film 7, within the active gas buffer space 68, and overlaps with multiple gas outlets 70 in a planar view, thereby suppressing the surface deactivation phenomenon in which the active gas G2 disappears as the active gas G2 collides with the conductive film 7.

[0151] As a result, the activated gas generator 75 of the second embodiment can supply a high concentration activated gas G2 from the plurality of gas outlets 70 to the downstream processing space, similarly to the first embodiment.

[0152] The housing bottom 1a of the housing 1 has a housing opening 41 in an area that overlaps with the active gas buffer space 68 in a planar view, and the active gas G2 ejected from the multiple gas ejection ports 70 is guided through the housing opening 41 to the processing space below.

[0153] In the activated gas generator 75 of the second embodiment, the housing opening 41 provided in the housing bottom 1a of the housing 1 has a tapered shape in which the opening area becomes wider as it goes downward.

[0154] Therefore, similar to embodiment 1, the active gas generating apparatus 75 of embodiment 2 can suppress losses caused by the active gas G2 ejected from the multiple gas outlets 70 colliding with the bottom 1a of the housing, and can supply a relatively high concentration of active gas G2 to the processing space below.

[0155] (Multiple Gas Outlets 70) The active gas G2 ejected from the multiple gas outlets 70 provided in the electrode unit 55 of the second embodiment is supplied to a subsequent processing space located below. Here, the active gas ejected from the multiple gas outlets 70 is defined as multiple partially activated gases.

[0156] In the electrode unit 55 of the second embodiment, the plurality of partially activated gases ejected from the plurality of gas ejection ports 70 are guided downward through the housing opening 41 .

[0157] Figures 36 and 37 are explanatory diagrams that schematically show the cross-sectional structure of a plurality of gas jet ports 70, and each of Figures 36 and 37 corresponds to the cross-sectional structure taken along line DD in Figure 34. An XYZ Cartesian coordinate system is depicted in each of Figures 36 and 37.

[0158] 36 and 37 , the housing opening 41 includes an upper region 41 a having a constant opening area in the height direction (Z direction) and a lower tapered region 41 t that is a tapered region whose opening area becomes wider downward. In the housing opening 41, the lower tapered region 41 t is a tapered region that is provided below the upper region 41 a.

[0159] 37, a coordinate position slightly lower than the center position of the boundary line between the upper region 41a and the lower tapered region 41t is shown as a collision point P80. The collision point P80 exists within a collision region 80, which will be described later, and is the center of the collision region 80.

[0160] In the electrode unit 55 of the first embodiment, the gas outlets 70 are arranged so as to approach each other downwards so that the partially activated gases collide at a collision point P80.

[0161] The following is a detailed description of the structure of the plurality of gas outlets 70. Although two gas outlets 70 are shown in Figures 36 and 37, as shown in Figure 34, the number of the plurality of gas outlets 70 is three or more.

[0162] In the following, of the two gas outlets 70 illustrated in each of Figures 36 and 37, the gas outlet 70 on the right side (+X direction side) in the figure will be referred to as gas outlet 70(1), and the gas outlet 70 on the left side (-X direction side) in the figure will be referred to as gas outlet 70(2).

[0163] As described above, the gas outlets 70 are arranged in a circular shape, spaced apart from one another, in a plan view. Hereinafter, a circular imaginary line connecting the centers of the gas outlets 70 will be referred to as a "imaginary gas outlet circle."

[0164] Gas outlets 70(1) and 70(2) correspond to a pair of gas outlets 70, 70 that are diametrically opposed on the imaginary gas outlet circle. Here, the partially activated gas ejected from gas outlet 70(1) is referred to as partially activated gas g2(1), and the partially activated gas ejected from gas outlet 70(2) is referred to as partially activated gas g2(2).

[0165] The gas nozzle 70(1) has a constant nozzle inclination A71 that exceeds "0" and is less than 90° with respect to the horizontal direction (X direction), which is the reference direction. The nozzle inclination A71 is set in the direction in which the partially activated gas g2(1) ejected from the gas nozzle 70(1) heads toward the collision point P80.

[0166] Like gas nozzle 70(1), gas nozzle 70(2) has a constant nozzle inclination A72 that exceeds "0" and is less than 90° with respect to the horizontal direction. The nozzle inclination A72 is set in the direction in which the partially activated gas g2(2) ejected from gas nozzle 70(2) heads toward collision point P80.

[0167] The nozzle inclinations A71 and A72 are set to the same angle, for example, 45°.

[0168] The remaining film thickness T6 of the ground conductor 60 below the active gas buffer space 68, where the gas outlets 70(1) and 70(2) are provided, is set to, for example, 3 mm. The formation interval R70 between the centers of the gas outlets 70(1) and 70(2) at the top is set to, for example, 16.4 mm. The formation interval R70 corresponds to the length of the diameter Φ of the imaginary gas outlet circle.

[0169] On the other hand, the overall depth DTA of the housing opening 41 along the Z direction is set to, for example, 18.5 mm, and the upper depth DT1 of the upper region 41a of the housing opening 41 along the Z direction is set to, for example, 5.0 mm.

[0170] The side surface of the lower tapered region 41t, which is the tapered region of the housing opening 41, widens in a conical shape along a taper inclination A41. The taper inclination A41 is set to, for example, 45°.

[0171] In the ground conductor 60 having the above-described structure, when the partially activated gases g2(1) and g2(2) are ejected from the gas ejection ports 70(1) and 70(2), the partially activated gases g2(1) and g2(2) collide at a collision point P80. As shown in Figure 37, the depth of the collision point P80 from the surface of the ground conductor 60 is the collision depth DTX.

[0172] Even if the total number of gas jet ports 70 is three or more, by arranging the gas jet ports 70 along a virtual gas jet port circle whose diameter is the formation interval R70 and setting the jet port inclination A70 to the same value in the direction toward the collision point P80, three or more partially activated gases can be collided at the same collision point P80. The jet port inclination A70 is a general term for the jet port inclinations A71, A72, etc.

[0173] In the example of setting the nozzle inclinations A71 and A72, the formation interval R70, the remaining film thickness T6, and the upper depth DT1 described above, the impact depth DTX of the impact point P80 is 5.2 mm.

[0174] Considering the diameters of the gas outlets 70(1) and 70(2), the multiple partially activated gases are considered to collide in a collision region 80 that spreads from the collision point P80. Therefore, in the above example, the collision region 80 is formed from the upper region of the lower tapered region 41t to the lower region of the upper region 41a. That is, the collision region 80 exists within the lower tapered region 41t or within the upper region 41a above the lower tapered region 41t.

[0175] (Ejection form of active gas G2) Figures 38 to 41 are explanatory diagrams each showing a typical ejection form of active gas G2 in housing opening 41 of electrode unit 55 according to embodiment 2. Each of Figures 38 to 41 corresponds to a part of cross section D-D in Figure 34. An XYZ Cartesian coordinate system is depicted in each of Figures 38 to 41.

[0176] Hereinafter, the direction of the partially activated gas g2(1) ejected from the gas outlet 70(1) is defined as the partially activated gas ejection direction V7(1), and the direction of the partially activated gas g2(2) ejected from the gas outlet 70(2) is defined as the partially activated gas ejection direction V7(2).

[0177] As shown in Figure 38, the partially activated gas g2(1) is ejected along the partially activated gas ejection direction V7(1) so as to reach the collision point P80, and the partially activated gas g2(2) is ejected along the partially activated gas ejection direction V7(2) so as to reach the collision point P80.

[0178] That is, the flow direction of the partially activated gas g2(1) is only one direction, the partially activated gas ejection direction V7(1), and the flow direction of the partially activated gas g2(2) is only one direction, the partially activated gas ejection direction V7(2).

[0179] Then, as shown in FIG. 39, the partially activated gas g2(1) and the partially activated gas g2(2) collide in a collision region 80 including a collision point P80, and the partially activated gas g2(1) and the partially activated gas g2(2) diffuse in multiple diffusion directions DK.

[0180] That is, the flow direction of the partially activated gas g2(1) diverges from one partially activated gas ejection direction V7(1) into multiple diffusion directions DK, and the flow direction of the partially activated gas g2(2) diverges from one partially activated gas ejection direction V7(2) into multiple diffusion directions DK. In this way, in the collision region 80, the flow directions of the multiple partially activated gases each diverge from one direction into multiple diffusion directions.

[0181] As shown in FIG. 40, the intermediate supply direction DR1 of the plurality of partially activated gases is influenced by the side surface of the lower tapered region 41t and is restricted to approach the taper gradient A41.

[0182] In this way, since the collision region 80 exists in the lower tapered region 41t and the upper region 41a above the lower tapered region 41t, the diffused partially activated gases flow in a direction along the tapered shape of the side surface of the lower tapered region 41t as they move downward.

[0183] Thereafter, as shown in FIG. 41, the plurality of partially activated gases are supplied to a downstream processing space located below along a final supply direction DR2 of the expansion along the taper gradient A41.

[0184] (Effects) The activated gas generator 75 of the second embodiment having such a structure has the same effects as those of the first embodiment, and further has the following effects that are unique to the second embodiment.

[0185] The activated gas generator 75 of the second embodiment accommodates the electrode unit 55 having the above-described grounded conductor 60 in the housing space 1S of the housing 1. The plurality of gas outlets 70 provided in the grounded conductor 60 of the electrode unit 55 of the second embodiment are arranged in such a manner that they approach each other downward so that the plurality of partially activated gases collide in a collision region 80 including a collision point P80, and the collision region 80 is located within the downward tapered region 41t or above the downward tapered region 41t.

[0186] Therefore, as shown in FIG. 39, when a plurality of partially activated gases collide in the collision region 80, the flow direction of each of the plurality of partially activated gases is dispersed from one direction into a plurality of diffusion directions DK.

[0187] The collision region 80 exists within the lower tapered region 41t or above the lower tapered region 41t. Therefore, as the diffused partially activated gases move downward, they flow in a direction along the tapered shape of the side surface of the lower tapered region 41t, i.e., in the intermediate supply direction DR1 shown in FIG.

[0188] Thereafter, the activated gas G2 containing multiple partially activated gases flows from the lower tapered region 41t toward the processing space below, diffusing in a direction along the tapered shape of the side surface of the lower tapered region 41t, i.e., along the final supply direction DR2 shown in FIG. 41.

[0189] In this manner, the plurality of partially activated gases ejected from the plurality of gas ejection ports 70 flow through the housing opening 41 as shown in FIGS.

[0190] As a result, even if the space pressure p0 of the active gas buffer space 68 and the space pressure p1 of the downstream processing space are significantly different, the active gas generation device 75 of embodiment 1 can supply a uniform active gas G2 to the downstream processing space.

[0191] The multiple gas ejection ports 70 provided in the electrode unit 55 of embodiment 2 are each formed with an inclination in the direction approaching the collision area 80 including the collision point P80 as they extend downward, and the ejection port inclination A70, which is the inclination of the formation of each of the multiple gas ejection ports 70 with respect to the horizontal direction, which is the reference direction, is set to the same value.

[0192] Therefore, even if the number of gas outlets 70 is three or more, the plurality of partially activated gases ejected from the plurality of gas outlets 70 can collide within the same collision region 80 .

[0193] As a result, the activated gas generating apparatus 75 of embodiment 2 can supply a more uniform activated gas G2 toward the downstream processing space by dispersing multiple partial activated gases in multiple diffusion directions in one collision area 80.

[0194] Furthermore, the activated gas generator 75 of the second embodiment employs a structure in which a plurality of electrode units 55 are provided as electrode units 51 to 53, as shown in FIG.

[0195] Therefore, the activated gas generating apparatus 75 of embodiment 2 can uniformly supply activated gas G2 to the downstream processing space having a relatively wide area by ejecting multiple partial activated gases from each of multiple electrode units 51 to 53, each of which has a structure similar to that of the electrode unit 55.

[0196] <Embodiment 3> (Basic Configuration) Figure 42 is an explanatory diagram schematically showing a basic configuration of an electrode unit 81 used in an active gas generator of embodiment 3. The active gas generator of embodiment 3 has an electrode unit 81 that activates a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0197] As shown in the same figure, the electrode unit 81 comprises a high-voltage side electrode component E11 which is a first electrode component, and a ground side electrode component E20 which is a second electrode component provided below the high-voltage side electrode component E11.

[0198] The high-voltage side electrode configuration portion E11, which is the first electrode configuration portion, includes a dielectric film F2, which is a dielectric film for the first electrode, and a high-voltage electrode F5, which is a conductive film for the first electrode, provided on the upper surface of the dielectric film F2.

[0199] The ground side electrode configuration E20, which is the second electrode configuration portion, includes a dielectric film F3, which is a dielectric film for the second electrode, and a ground electrode F6, which is a conductive film for the second electrode, provided on the lower surface of the dielectric film F3.

[0200] The electrode unit 81 of the third embodiment is characterized by a structure in which a dielectric protective film FC2 serving as a dielectric protective member is provided in close contact with the underside of the dielectric film F2 with no gaps between them. That is, the high-voltage side electrode configuration portion E11 in the electrode unit 81 of the third embodiment is configured to include the dielectric film F2, the high-voltage electrode F5, and the dielectric protective film FC2.

[0201] A dielectric space 18 is formed between the dielectric film F2 and the dielectric film F3 via the dielectric protective film FC2. Specifically, the space where the dielectric protective film FC2 and the dielectric film F3 face each other forms the dielectric space 18. The discharge space 4 includes a main discharge space, which is a region within the dielectric space 18 where the high-voltage electrode F5 and the ground electrode F6 overlap in plan view.

[0202] Thus, in the electrode unit 81 of embodiment 3, of the dielectric film F2 and the dielectric film F3, the dielectric film F2 is the dielectric film to be protected, and a dielectric protective film FC2 is provided on the dielectric space 18 side of the dielectric film F2, which is the dielectric film to be protected.

[0203] The material of the dielectric protective film FC2 has protective properties that, when a dielectric barrier discharge occurs in the discharge space 4, block irradiation of the dielectric film F2, which is the dielectric film to be protected, with ions generated by the dielectric barrier discharge, and do not chemically react with the ions.

[0204] As a material for the dielectric protective film FC2, for example, semi-insulating silicon carbide is considered. ５ This means that the dielectric strength is 1 kV / mm or more.

[0205] The dielectric protective film FC2 has the semi-insulating properties described above, and therefore can contribute to the dielectric barrier discharge occurring in the discharge space 4. This also applies to the dielectric protective films FC3 to FC5 in the fourth to eighth embodiments described later.

[0206] The electrode unit 81 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage electrode configuration part E11 and the ground electrode F6 of the ground-side electrode configuration part E20. Specifically, an AC voltage is applied to the high-voltage electrode F5, and the ground electrode F6 is set to the ground potential, which is the reference potential.

[0207] The electrode unit 81 which is the basic aspect of the third embodiment generates a dielectric barrier discharge in the discharge space 4 when a voltage is applied from the AC power supply 15 .

[0208] 42, there are no particular limitations on the manner in which the raw material gas G1 is supplied to the discharge space 4 or the manner in which the active gas G2 is ejected. For example, in FIG. 42, the raw material gas G1 may be supplied from the left side of the drawing, and the active gas G2 may be ejected from the right side of the drawing.

[0209] In the active gas generator of the third embodiment having the electrode unit 81 as the basic configuration, the dielectric protective film FC2, which is a dielectric protective member having the above-mentioned protective properties, is present between the dielectric space 18 including the discharge space 4 and the dielectric film F2, which is the dielectric film to be protected. This makes it possible to suppress the dielectric film reaction phenomenon in which the dielectric film F2 reacts with ions when a dielectric barrier discharge occurs in the discharge space 4.

[0210] As a result, the active gas generating device, which is the basic aspect of embodiment 3, can generate high-purity active gas G2 by reliably preventing elements of the dielectric film F2 and the like from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon.

[0211] In addition, the electrode unit 81 does not require any changes to the constituent materials of the dielectric films F2 and F3, and can be constructed simply by adding the dielectric protective film FC2, so the manufacturing process of the electrode unit 81 does not become complicated.

[0212] In the active gas generating apparatus of the basic aspect of embodiment 3, the dielectric protective film FC2 is tightly adhered to the underside of the dielectric film F2, which is the dielectric film to be protected, without any gaps, so that the active gas G2 can be obtained with high precision without creating any space other than the discharge space 4 where a discharge phenomenon occurs between the dielectric film F2 and the dielectric film F3.

[0213] The high-voltage side electrode component E11 of the electrode unit 81 includes a dielectric protective film FC2. The activated gas generator of the basic mode of the third embodiment having this electrode unit 81 can activate the source gas G1 supplied to the discharge space 4 in the dielectric space 18 and generate the activated gas G2 by applying an AC voltage as an applied voltage from the AC power supply 15 between the high-voltage electrode F5 and the ground electrode F6.

[0214] (Second Aspect) Figure 43 is an explanatory diagram showing the concept of an electrode unit 810 used in an activated gas generator according to a second aspect of embodiment 3. An XYZ orthogonal coordinate system is depicted in the drawing.

[0215] The electrode unit 810 shown in Fig. 43 has a conceptual structure in which the electrode unit 81 of the basic configuration shown in Fig. 42 is applied to the electrode unit 55 of embodiment 2. In the electrode unit 810, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground-side dielectric film 3 is used as the dielectric film F3, and the power feeder 5 is used as the high-voltage electrode F5. Note that the conductive film 7 (Figs. 20 and 21), not shown, is used as the ground electrode F6.

[0216] As shown in the figure, in an electrode unit 810 illustrating the concept of the second aspect, a dielectric protective film FC2 is provided in close contact with the lower surface of the high-voltage side dielectric film 2. The method of forming the dielectric protective film FC2 does not matter in the electrode unit 810. The electrode unit 811 described below is an electrode unit 810 realized in a practical structure.

[0217] 44 is an explanatory diagram showing the cross-sectional structure of an electrode unit 811 used in an activated gas generator according to a second aspect of embodiment 3. An XYZ orthogonal coordinate system is shown in the drawing.

[0218] The electrode unit 811 shown in Fig. 44 is a practical structure in which the electrode unit 81 of the basic configuration shown in Fig. 42 is applied to the electrode unit 55 of embodiment 2. In the electrode unit 811, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground side dielectric film 3 is used as the dielectric film F3, and the power feeder 5 is used as the high-voltage electrode F5. Note that the conductive film 7 (Figs. 20 and 21), not shown, is used as the ground electrode F6.

[0219] In this way, the active gas generator having a practical structure according to the second aspect of the third embodiment is an active gas generator having the electrode unit 811 .

[0220] The overall configuration of the second aspect of the active gas generator of embodiment 3 is similar to that of the active gas generator 71 shown in Fig. 1. Therefore, the electrode unit 811 shown in Fig. 44 corresponds to any one of the electrode units 51 to 53 in the active gas generator 75 having the overall configuration shown in Fig. 1.

[0221] That is, the second aspect of the active gas generator of embodiment 3, like the active gas generator 71 of embodiment 1, comprises a plurality of electrode units, ie, electrode units 51 to 53, and a conductive housing 1 that houses the electrode units 51 to 53 in an internal housing space S1 (see Figure 8).

[0222] In the following, structures similar to the electrode unit 50 (51 to 53) of embodiment 1 or the electrode unit 55 of embodiment 2 will be given the same symbols and explanations will be omitted as appropriate, and the description will focus on the characteristic parts of the electrode unit 811.

[0223] 44, in the electrode unit 811, like the electrode unit 50 (51 to 53) of the first embodiment, the lower surface of the high-voltage-side dielectric film 2 has a recessed portion bottom surface 26 and a convex portion bottom surface 23 provided around the recessed portion bottom surface. The convex portion bottom surface 23 is formed at a higher position in the height direction along the +Z direction than the recessed portion bottom surface 26. A dielectric protective film FC2 is provided on the recessed portion bottom surface 26, and no dielectric protective film FC2 is provided on the convex portion bottom surface 23.

[0224] The electrode unit 811 includes a dielectric film support member 10B having a support surface 10F that serves as a dielectric support surface that supports the convex bottom surface 23 of the high-voltage side dielectric film 2 from below.

[0225] 45 is an explanatory diagram showing a schematic planar structure of the dielectric film support member 10B. The XYZ Cartesian coordinate system is shown in the figure. Note that the groove 16 and O-ring 17, which will be described later, are not shown in FIG.

[0226] 45, the dielectric film support member 10B has a circular shape with a central opening 100 in the center in a plan view. A step structure consisting of step portions 103, 102, and a peripheral upper surface 101 is provided in an annular shape around the central opening 100. The upper surface of step portion 103 serves as a fixing auxiliary surface 10XF, and the upper surface of step portion 102 serves as a support surface 10F. Step portion 102 (support surface 10F) is located on the outer periphery of step portion 103 (10XF), and a plurality of through holes 10h are provided in a circular pattern on the peripheral upper surface 101 on the outer periphery of step portion 102.

[0227] The auxiliary fixing surface 10XF is provided in an annular shape along the outer periphery of the central opening 100, and the support surface 10F is provided in an annular shape along the outer periphery of the auxiliary fixing surface 10XF.

[0228] On the other hand, as explained in embodiment 1 with reference to Figures 9 and 10, the high-voltage side dielectric film 2 has a recess bottom surface 26 that is circular in plan view, and a convex bottom surface 23 whose bottom surface around the recess bottom surface 26 is annular in plan view.

[0229] As shown in Figures 44 and 45, the dielectric film support member 10B further has a fixing auxiliary surface 10XF which serves as a protective member fixing auxiliary surface located below the peripheral area of ​​the dielectric protective film FC2 provided on the bottom surface 26 of the recess of the high-voltage side dielectric film 2.

[0230] Like the electrode units 50 and 55, the electrode unit 811 is provided with a dielectric film suppression member 11 that suppresses the high-voltage side dielectric film 2, which is the dielectric film for the first electrode, from above, and the dielectric film suppression member 11 does not overlap with the power supply body 5 when viewed in a plane.

[0231] In the dielectric film support member 10B, an O-ring 17, which functions as an elastic member, is inserted between the auxiliary fixing surface 10XF, which serves as the protective member fixing auxiliary surface, and the lower surface of the dielectric protective film FC2. The elastic force of the O-ring 17 brings the recess bottom surface 26 of the high-voltage side dielectric film 2 into close contact with the upper surface of the dielectric protective film FC2. This point will be described in detail below.

[0232] The dielectric film support member 10B has a groove 16 that is provided in the auxiliary fixing surface 10XF and has a circular shape in plan view. An O-ring 17 that is circular in plan view is provided in the groove 16. In this way, the electrode unit 811 includes the dielectric film support member 10B having the groove 16 and the O-ring 17.

[0233] The O-ring 17 provided in the groove 16 is normally used as a sealant to seal out fluids such as gas. The electrode unit 811 uses the O-ring 17 as an elastic member. Specifically, the elastic force generated when the O-ring 17 is deformed is utilized.

[0234] 44, the O-ring 17 is deformed by being sandwiched between the dielectric film support member 10B and the high-voltage side dielectric film 2 via the dielectric protective film FC2. The elastic force of the O-ring 17, which functions as an elastic member, causes the upper surface of the dielectric protective film FC2 to adhere tightly to the lower surface of the high-voltage side dielectric film 2.

[0235] The electrode unit 811 used in the second aspect of embodiment 3, like the basic aspect, can generate a high-purity active gas G2 by reliably preventing elements of the dielectric film F2 and the like from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon.

[0236] In addition, the electrode unit 811 does not require any changes to the constituent materials of the high-voltage side dielectric film 2 and the ground-side dielectric film 3, and the main changes from the electrode unit 55 are the improvement from the dielectric film support member 10 to a dielectric film support member 10B and the addition of a dielectric protective film FC2. Therefore, the manufacturing process of the electrode unit 811 does not become complicated.

[0237] For example, consider a case in which the electrode unit 55 does not have a dielectric protective film FC2 and a material having the above-mentioned protective properties is used as the material for the high-voltage side dielectric film 2. Here, the high-voltage side dielectric film 2 made of the material having the above-mentioned protective properties is referred to as the "high-voltage side dielectric film 2X." Because the high-voltage side dielectric film 2X has a relatively complex structure including the power feeder placement recess 28, the convex portion bottom surface 23, and the recess bottom surface 26, if the material having the above-mentioned protective properties is difficult to process, the processing for obtaining the high-voltage side dielectric film 2X will be relatively complex.

[0238] On the other hand, the dielectric protective film FC2 in the electrode unit 811 has a relatively simple flat plate structure, and only a relatively simple manufacturing step is added in which the dielectric protective film FC2 is disposed on the auxiliary fixing surface 10XF of the dielectric film support member 10B via the O-ring 17. Therefore, the manufacturing process of the electrode unit 811 is not complicated.

[0239] Furthermore, in the electrode unit 811, a dielectric protective film FC2 is provided on the underside of the high-voltage side dielectric film 2, which does not have a through hole, so that the dielectric protective film FC2 can completely protect the high-voltage side dielectric film 2 from the dielectric barrier discharge in the discharge space 4.

[0240] The second aspect of the activated gas generator of the third embodiment having such an electrode unit 811 has the same effects as the basic aspect of the activated gas generator having the electrode unit 81, and further has the following unique effects.

[0241] In the second mode of the active gas generator of the third embodiment, the dielectric film support member 10B of the electrode unit 811 supports the bottom surface 23 of the convex portion of the ground-side dielectric film 3 from below with a support surface 10F that serves as the dielectric support surface. Furthermore, the elastic force of the O-ring 17, which functions as an elastic member, brings the bottom surface 26 of the concave portion of the high-voltage-side dielectric film 2 and the upper surface of the dielectric protective film FC2 into close contact with each other.

[0242] Therefore, the second aspect of the active gas generating apparatus of embodiment 3 can stably fix the dielectric protective film FC2 that is in close contact with the high-pressure side dielectric film 2 with a relatively simple structure of providing a dielectric film support member 10B and an O-ring 17.

[0243] In addition, the second aspect of the active gas generating device of embodiment 3 utilizes the elastic force of the O-ring 17, thereby enabling improvement in the accuracy of adhesion between the bottom surface 26 of the recess in the high-pressure side dielectric film 2 and the upper surface of the dielectric protective film FC2 with a relatively simple structure.

[0244] Furthermore, in a second mode of the activated gas generation apparatus of embodiment 3 having the electrode unit 811 shown in Figures 44 and 45, the multiple gas jets 70 have the same characteristics as the electrode unit 55 of embodiment 2. That is, the multiple gas jets 70 are provided in such a manner that they approach each other downward so that the multiple partially activated gases collide in a collision region 80, and the collision region 80 is located within the downward tapered region 41t (see Figures 36 and 37) or above the downward tapered region 41t.

[0245] Therefore, the second aspect of the activated gas generation apparatus of the third embodiment can supply a uniform activated gas G2 to the downstream processing space, similar to the activated gas generation apparatus of the second embodiment.

[0246] In the third embodiment, the electrode unit 811 using the O-ring 17 is shown as an example of an actual structure for realizing the electrode unit 810, but the electrode unit 810 may be realized with other structures. For example, the first and second modified examples described below are conceivable.

[0247] As a first modification, a structure in which a general spring is used instead of the O-ring 17 between the auxiliary fixing surface 10XF of the dielectric film support member 10B and the dielectric protective film FC2 to provide tight contact therebetween is conceivable.

[0248] As a second modification, a magnetic thin-film region made of a magnetic material such as iron is provided at the end of the dielectric protective film FC2, and the magnetic thin-film region of the dielectric protective film FC2 is attracted by the magnetic force of a magnet provided above the magnetic thin-film region of the dielectric protective film FC2 to hold the dielectric protective film FC2. The magnetic thin-film region can be formed by a sputtering method or the like. To realize the second modification, a magnet may be provided in the overlapping region of the dielectric film suppressing member 11 or the pressing member 12 of the electrode unit 811 shown in FIG. 44 with the fixing auxiliary surface 10XF in a plan view.

[0249] The magnetic thin film region may be provided on either the side facing the discharge space 4 or the side not facing it, but it is desirable to provide it in a position where it will not be hit by ions and electrons generated by the dielectric barrier discharge.

[0250] 46 is an explanatory diagram schematically illustrating a basic aspect of an electrode unit 82 used in an active gas generator according to embodiment 4. The active gas generator according to embodiment 4 has an electrode unit 82 that activates a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0251] As shown in the same figure, the electrode unit 82 comprises a high-voltage side electrode component E10 which is the first electrode component, and a ground side electrode component E21 which is the second electrode component provided below the high-voltage side electrode component E10.

[0252] The high-voltage side electrode configuration E10, which is the first electrode configuration portion, includes a dielectric film F2, which is a dielectric film for the first electrode, and a high-voltage electrode F5, which is a conductive film for the first electrode, provided on the upper surface of the dielectric film F2.

[0253] The ground side electrode configuration portion E21, which is the second electrode configuration portion, includes a dielectric film F3, which is a dielectric film for the second electrode, and a ground electrode F6, which is a conductive film for the second electrode, provided on the lower surface of the dielectric film F3.

[0254] The electrode unit 82 of the fourth embodiment is characterized by a structure in which a dielectric protective film FC3, which is a dielectric protective member, is provided in close contact with the upper surface of the dielectric film F3 without any gaps. That is, the ground-side electrode configuration portion E21 in the electrode unit 82 of the fourth embodiment is configured to include the dielectric film F3, the ground electrode F6, and the dielectric protective film FC3.

[0255] A dielectric space 18 is provided between the dielectric films F2 and F3 via the dielectric protective film FC3. Specifically, in the electrode unit 82, the dielectric protective film FC3 is provided in close contact with the upper surface of the dielectric film F3, and the space where the dielectric film F2 and the dielectric protective film FC3 face each other forms the dielectric space 18. Within this dielectric space 18, a discharge space 4 is formed, which includes a main discharge space that is an area where the high-voltage electrode F5 and the ground electrode F6 overlap in plan view.

[0256] Thus, in the electrode unit 82 of embodiment 4, of the dielectric films F2 and F3, the dielectric film F3 is the dielectric film to be protected, and a dielectric protective film FC3 is provided on the dielectric space 18 side of the dielectric film F3 that is the dielectric film to be protected.

[0257] Like the dielectric protective film FC2, the constituent material of the dielectric protective film FC3 has the protective property of blocking irradiation of the dielectric film F3, which is the dielectric film to be protected, with ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space 4, and not reacting chemically with the ions.

[0258] The electrode unit 82 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage electrode configuration part E10 and the ground electrode F6 of the ground-side electrode configuration part E21. Specifically, an AC voltage is applied to the high-voltage electrode F5, and the ground electrode F6 is set to the ground potential, which is the reference potential.

[0259] The electrode unit 82 which is the basic aspect of the fourth embodiment generates a dielectric barrier discharge in the discharge space 4 when a voltage is applied from the AC power supply 15 .

[0260] 46, there are no particular limitations on the manner in which the raw material gas G1 is supplied to the discharge space 4 or the manner in which the active gas G2 is ejected. For example, in FIG. 46, the raw material gas G1 may be supplied from the left side of the drawing, and the active gas G2 may be ejected from the right side of the drawing.

[0261] In the active gas generator of the fourth embodiment having the electrode unit 82, the dielectric protective film FC3, which is a dielectric protective member having the above-mentioned protective properties, is present between the dielectric space 18 including the discharge space 4 and the dielectric film F3, which is the dielectric film to be protected. This makes it possible to suppress the dielectric film reaction phenomenon in which the dielectric film F3 reacts with ions when a dielectric barrier discharge occurs in the discharge space 4.

[0262] As a result, the active gas generating device, which is the basic aspect of embodiment 4, can generate high-purity active gas G2 by reliably preventing elements of the dielectric film F3 and the like from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon.

[0263] In addition, the electrode unit 82 does not require any changes to the constituent materials of the dielectric films F2 and F3, and can be constructed simply by adding the dielectric protective film FC3, so the manufacturing process for the electrode unit 82 does not become complicated.

[0264] In the active gas generating apparatus of the basic aspect of embodiment 4, the dielectric protective film FC3 is tightly adhered to the upper surface of the dielectric film F3, which is the dielectric film to be protected, without any gaps, so that the active gas G2 can be obtained with high precision without creating any space other than the discharge space 4 between the dielectric film F2 and the dielectric film F3 where a discharge phenomenon occurs.

[0265] The grounded electrode component E21 of the electrode unit 82 includes a dielectric protective film FC3. The activated gas generator of the fourth embodiment having this electrode unit 82 can activate the source gas G1 supplied to the discharge space 4 in the dielectric space 18 and generate the activated gas G2 by applying a voltage between the high-voltage electrode F5 and the grounded electrode F6.

[0266] Furthermore, the dielectric protection member represented by the dielectric protection film FC3 can achieve the above-mentioned effects if it is provided on the dielectric space 18 side of the dielectric film to be protected, which is at least one of the dielectric films F2 and F3.

[0267] Therefore, the electrode unit 82 may be expanded to further provide a dielectric protective film FC2 on the lower surface of the dielectric film F2. Similarly, the electrode unit 81 of the third embodiment may be expanded to further provide a dielectric protective film FC3 on the upper surface of the dielectric film F3.

[0268] <Embodiment 5> (Basic form) Figure 47 is an explanatory diagram schematically showing a basic form of an electrode unit 83 used in an active gas generator of embodiment 5. The active gas generator of embodiment 5 has an electrode unit 83 that activates a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0269] Hereinafter, the same structures as those of the electrode unit 81 of the third embodiment will be denoted by the same reference numerals and explanations thereof will be omitted as appropriate, and the characteristic parts of the electrode unit 83 will be mainly described.

[0270] As shown in the same figure, the electrode unit 83 comprises a high-voltage side electrode component E12 which is a first electrode component, and a ground side electrode component E20 which is a second electrode component provided below the high-voltage side electrode component E12.

[0271] The high-voltage side electrode configuration portion E12, which is the first electrode configuration portion, includes a dielectric film F2, which is a dielectric film for the first electrode, and a high-voltage electrode F5, which is a conductive film for the first electrode, provided on the upper surface of the dielectric film F2.

[0272] The ground side electrode configuration E20, which is the second electrode configuration portion, includes a dielectric film F3, which is a dielectric film for the second electrode, and a ground electrode F6, which is a conductive film for the second electrode, provided on the lower surface of the dielectric film F3.

[0273] The electrode unit 83 of the fifth embodiment is characterized by a structure in which a dielectric protective film FC4, which is a dielectric protective member, is provided below the dielectric film F2, which is a first electrode dielectric film, via a protective member space 40.

[0274] In this way, the high-voltage side electrode configuration part E12 in the electrode unit 83 of embodiment 5 is composed of a dielectric film F2, a high-voltage electrode F5 and a dielectric protective film FC4, and the dielectric protective film FC4 is provided with a protective member space 40 which forms a minute gap between it and the dielectric film F2, which is the dielectric film to be protected.

[0275] A dielectric space 18 is provided between the dielectric film F2 and the dielectric film F3 via the dielectric protective film FC4. Specifically, the space where the dielectric protective film FC4 and the dielectric film F3 face each other forms the dielectric space 18. Within this dielectric space 18, a discharge space 4 is formed, which includes a main discharge space that is an area where the high-voltage electrode F5 and the ground electrode F6 overlap in plan view.

[0276] Thus, in the electrode unit 83 of embodiment 5, of the dielectric film F2 and the dielectric film F3, the dielectric film F2 is the dielectric film to be protected, and a dielectric protective film FC4 is provided on the dielectric space 18 side of the dielectric film F2, which is the dielectric film to be protected.

[0277] The constituent material of the dielectric protective film FC4, like the dielectric protective film FC2 of embodiment 3 and the dielectric protective film FC3 of embodiment 4, has the protective property of blocking irradiation of the dielectric film F2, which is the dielectric film to be protected, with ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space 4, and not reacting chemically with the ions.

[0278] The electrode unit 83 which is the basic aspect of the fifth embodiment generates a dielectric barrier discharge in the discharge space 4 when a voltage is applied from the AC power supply 15 .

[0279] In this case, the applied voltage, the discharge space 4, and the protective member space 40 are set so as to satisfy the discharge generation requirements that, when the applied voltage is applied, a dielectric barrier discharge occurs in the discharge space 4, but a dielectric barrier discharge does not occur in the protective member space 40. The discharge generation requirements will be explained below.

[0280] Generally, in dielectric barrier discharge, the voltage required to generate a discharge increases as the discharge distance (gap length) increases, assuming that the pressure and gas species are constant. This characteristic is known as Paschen's law.

[0281] For example, in nitrogen gas at a pressure of 400 Torr, according to Paschen's law, the discharge inception voltage is about 2900 V when the discharge distance is 1 mm, and about 6600 V when the discharge distance is 2.5 mm. On the other hand, the electric field strength at which discharge starts is 2900 V / mm for the former and 2640 V / mm for the latter, and the electric field strength required for discharge decreases as the discharge distance increases.

[0282] The dielectric barrier discharge employed by the electrode unit 83 is called a parallel plate type, and is characterized in that the electric field strength applied to the protective material space 40 is the same as that of the discharge space 4. Due to this characteristic, it is possible to intentionally increase the discharge initiation electric field strength by shortening the discharge distance (gap length) in the protective material space 40, and selectively limit the area where discharge occurs to only the discharge space 4.

[0283] Here, the applied voltage VP is the applied voltage applied from the AC power supply 15, the gap length Δ4 is ​​the gap length of the discharge space 4, and the gap length Δ40 is the gap length of the protective material space 40. Furthermore, the discharge initiation field strength E4 is the field strength required to start generating a dielectric barrier discharge in the discharge space 4, the discharge initiation field strength E40 is the field strength required to start generating a dielectric barrier discharge in the protective material space 40, and the field strength EX is the same field strength common to the discharge space 4 and the protective material space 40.

[0284] In this case, the discharge generation requirements among the electric field intensity EX, the discharge initiation electric field intensity E4, and the discharge initiation electric field intensity E40 are {EX<E40} and {EX≧E4}. If these discharge generation requirements are satisfied, a dielectric barrier discharge occurs in the discharge space 4, but no dielectric barrier discharge occurs in the protective member space 40.

[0285] By setting the gap length Δ40 to be sufficiently shorter than the gap length Δ4, it is possible to set {E40>>E4}. Therefore, it is relatively easy to set the applied voltage VP, gap length Δ4, and gap length Δ40 so as to satisfy the above-mentioned discharge generation requirements ({EX<E40} and {EX≧E4}).

[0286] 47, there are no particular limitations on the manner in which the raw material gas G1 is supplied to the discharge space 4 or the manner in which the active gas G2 is ejected. For example, in FIG. 47, the raw material gas G1 may be supplied from the left side of the drawing, and the active gas G2 may be ejected from the right side of the drawing.

[0287] In the active gas generator of the fifth embodiment having the electrode unit 83 as the basic configuration, the dielectric protective film FC4, which is a dielectric protective member having the above-mentioned protective properties, is present between the dielectric space 18 including the discharge space 4 and the dielectric film F2, which is the dielectric film to be protected. This makes it possible to suppress the dielectric film reaction phenomenon in which the dielectric film F2 reacts with ions when a dielectric barrier discharge occurs in the discharge space 4.

[0288] As a result, the active gas generating device, which is the basic aspect of embodiment 5, can generate high-purity active gas G2 by reliably preventing elements of the dielectric film F2 and the like from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon.

[0289] In addition, the electrode unit 83 does not require any changes to the constituent materials of the dielectric films F2 and F3, and can be constructed simply by adding the dielectric protective film FC4, so the manufacturing process of the electrode unit 83 does not become complicated.

[0290] In the basic configuration of the active gas generating apparatus of embodiment 5, the dielectric protective film FC4, which is the dielectric protective member, has a protective member space 40 between it and the dielectric film F2, which is the dielectric film to be protected, so that the dielectric protective film FC4 and the dielectric film F2 do not need to be in close contact with each other, thereby simplifying the apparatus configuration.

[0291] Furthermore, by setting the gap length Δ40 of the protective member space 40 to a length that is sufficiently shorter than the gap length Δ4 of the discharge space 4, it is possible to relatively easily set the applied voltage, the discharge space 4, and the protective member space 40 that satisfy the above-mentioned discharge generation requirements.

[0292] As a result, the active gas generating device of the fifth embodiment can accurately generate the active gas G2 between the dielectric film F2 and the dielectric film F3 without creating a space other than the discharge space 4 where a discharge phenomenon occurs.

[0293] The high-voltage side electrode configuration portion E12 of the electrode unit 83 includes a dielectric protective film FC4, and the voltage applied between the dielectric films F2 and F3 of the electrode unit 83 satisfies the above-mentioned discharge generation requirements. Therefore, the active gas generator of embodiment 5 having the electrode unit 83 can generate a dielectric barrier discharge in the discharge space 4 including the main discharge space formed between the dielectric protective film FC4 and the dielectric film F3 without generating a dielectric barrier discharge in the protective member space 40 formed between the dielectric film F2 and the dielectric protective film FC4.

[0294] As a result, the activated gas generating device of the fifth embodiment can activate the raw material gas G1 supplied to the discharge space 4 to generate the activated gas G2.

[0295] (Second Aspect) Figure 48 is an explanatory diagram that schematically shows the concept of an electrode unit 830 used in an activated gas generator according to a second aspect of embodiment 5. An XYZ Cartesian coordinate system is depicted in the drawing.

[0296] The electrode unit 830 shows the characteristic portion of the conceptual structure in which the electrode unit 83 of the basic aspect shown in FIG. 47 is applied to the electrode unit 55 of the second embodiment.

[0297] As shown in the same figure, in an electrode unit 830 showing a characteristic part of the concept of the second aspect, a dielectric protective film FC4 is provided on the underside of the high-voltage side dielectric film 2 via a protective member space 40 which serves as a minute gap.

[0298] The electrode unit 830 includes a dielectric film support member M10 having a support surface 10F that serves as a dielectric support surface that supports the peripheral region of the dielectric film F2 from below, and a support surface 10YF that serves as a protective member support surface that supports the peripheral region of the dielectric protective film FC4 from below.

[0299] The electrode unit 831 described below is an electrode unit 830 shown in FIG. 48 realized in a practical structure.

[0300] Fig. 49 is an explanatory diagram showing the cross-sectional structure of an electrode unit 831 used in an activated gas generator according to a second aspect of embodiment 5. Fig. 50 is an explanatory diagram showing a schematic detailed structure of a focused region R3 in Fig. 49. An XYZ Cartesian coordinate system is depicted in each of Figs. 49 and 50.

[0301] The electrode unit 831 shown in Fig. 49 is a practical structure in which the electrode unit 83 of the basic configuration shown in Fig. 47 is applied to the electrode unit 55 of embodiment 2. In the electrode unit 831, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground-side dielectric film 3 is used as the dielectric film F3, the power feeder 5 is used as the high-voltage electrode F5, and the dielectric film support member 10C is used as the dielectric film support member M10. Note that a conductive film 7 (not shown in Figs. 20 and 21) is used as the ground electrode F6.

[0302] In this way, the active gas generator according to the second aspect of the fifth embodiment is an active gas generator having the electrode unit 831 .

[0303] The overall configuration of the second aspect of the active gas generator of embodiment 5 is similar to that of the active gas generator 71 shown in Fig. 1. Therefore, the electrode unit 831 shown in Fig. 49 corresponds to any one of the electrode units 51 to 53 in the active gas generator 75 having the overall configuration shown in Fig. 1.

[0304] That is, the second aspect of the active gas generator of embodiment 5, like the active gas generator 71 of embodiment 1, comprises a plurality of electrode units, ie, electrode units 51 to 53, and a conductive housing 1 that houses the electrode units 51 to 53 in an internal housing space S1 (see Figure 8).

[0305] In the following, structures similar to the electrode unit 50 (51 to 53) of embodiment 1 or the electrode unit 55 of embodiment 2 will be given the same symbols and explanations will be omitted as appropriate, and the description will focus on the characteristic parts of the electrode unit 831.

[0306] 49, in the electrode unit 831, like the electrode units 50 (51 to 53) of the first embodiment, the lower surface of the high-voltage-side dielectric film 2 has a recessed portion bottom surface 26 and a convex portion bottom surface 23 provided around the recessed portion bottom surface. The convex portion bottom surface 23 is formed higher in the height direction along the +Z direction than the recessed portion bottom surface 26. A dielectric protective film FC4 is provided below the recessed portion bottom surface 26 via a protective member space 40 (see FIG. 50), and no dielectric protective film FC4 is provided on the convex portion bottom surface 23.

[0307] The dielectric protective film FC4 in the electrode unit 831 has a flat plate-like structure, and the planar shape of the dielectric protective film FC4 in the XY plane is set to a circular shape slightly wider than the recess bottom surface 26 shown in FIGS.

[0308] 50, the conductive film 7 is omitted from illustration. The ground-side dielectric film 3 is provided on the ground conductor 60 via the conductive film 7 (not shown).

[0309] 50, a dielectric protective film FC4 is disposed on the lower surface side of the high-voltage side dielectric film 2 via a protective member space 40 having a minute gap length Δ40. A discharge space 4 having a gap length Δ4 is ​​formed between the dielectric protective film FC4 and the ground-side dielectric film 3. A power feeder 5 is provided on the upper surface of the high-voltage side dielectric film 2, and a ground conductor 60 is provided on the lower surface side of the ground-side dielectric film 3.

[0310] In the electrode unit 831, in order to satisfy the above-mentioned discharge generation requirements, the gap length Δ40, which is the discharge distance in the protective member space 40, is set to be sufficiently shorter than the gap length Δ4, which is the discharge distance in the discharge space 4.

[0311] The electrode unit 831 includes a dielectric film support member 10C having a support surface 10F that serves as a dielectric support surface that supports the convex bottom surface 23 of the high-voltage side dielectric film 2 from below.

[0312] 51 is an explanatory diagram showing a schematic planar structure of the dielectric film support member 10C, in which an XYZ Cartesian coordinate system is depicted.

[0313] 51 , the dielectric film support member 10C has a circular shape with a central opening 100 in the center in a plan view. A step structure consisting of a step portion 104, a step portion 102, and a peripheral upper surface 101 is provided in an annular shape around the central opening 100. The upper surface of the step portion 104 serves as the support surface 10YF, and the upper surface of the step portion 102 serves as the support surface 10F. The step portion 102 (support surface 10F) is located on the outer periphery of the step portion 104 (10YF), and a plurality of through holes 10h are provided in a circular pattern on the peripheral upper surface 101 on the outer periphery of the step portion 102.

[0314] The support surface 10YF is provided in an annular shape along the outer periphery of the central opening 100, and the support surface 10F is provided in an annular shape along the outer periphery of the support surface 10YF.

[0315] As shown in FIGS. 49 and 51, the dielectric film support member 10C further has a support surface 10YF that serves as a protective member support surface that supports the peripheral region of the dielectric protective film FC4 from below.

[0316] Therefore, by supporting the peripheral region of the dielectric protective film FC4 from below by the support surface 10YF, the position of the dielectric protective film FC4 in the height direction along the Z direction can be fixed.

[0317] In addition, by setting the inner diameter of the step portion 102 to be slightly wider than the radius of the dielectric protective film FC4, which has a circular planar shape, the movement of the dielectric protective film FC4 in the XY plane can be restricted with high precision.

[0318] Like the electrode units 50 and 55, the electrode unit 831 is provided with a dielectric film suppression member 11 that suppresses the high-voltage side dielectric film 2, which is the dielectric film for the first electrode, from above, and the dielectric film suppression member 11 does not overlap with the power supply body 5 in a planar view.

[0319] In the dielectric film support member 10C, the support surface 10F, which is the dielectric support surface, is formed at a higher height position than the support surface 10YF, which is the protective member support surface, and the height difference value Δd between the support surfaces 10F and 10YF is set so that a protective member space 40 with a gap length Δ40 is formed between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0320] For example, if the dielectric protective film FC4 has a uniform film thickness dC4 and the length of the recess bottom surface 26 in the depth direction from the convex bottom surface 23 in the -Z direction is taken as the protrusion length t26, the difference value Δd is set to a length that satisfies {Δd = dC4 + t26 + Δ40}. In this case, the gap length Δ40 of the protective member space 40 needs to be set sufficiently shorter than the gap length Δ4 of the discharge space 4 so as to satisfy the above-mentioned discharge generation requirements. The film thicknesses of the dielectric protective films FC2 to FC5, including the above-mentioned dielectric protective film FC4, are set to 1 mm or less.

[0321] The electrode unit 831 used in the second aspect of embodiment 5, like the basic aspect, can generate a high-purity active gas G2 by reliably preventing elements of the dielectric film F2 and the like from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon.

[0322] In addition, the electrode unit 831 does not require any changes to the constituent materials of the high-voltage side dielectric film 2 and the ground-side dielectric film 3, and the main changes from the electrode unit 55 are the improvement from the dielectric film support member 10 to a dielectric film support member 10C and the addition of a dielectric protective film FC4. Therefore, like the manufacturing process for the electrode unit 811, the manufacturing process for the electrode unit 831 does not become complicated.

[0323] Furthermore, in the electrode unit 831, a dielectric protective film FC4 is provided below the high-voltage side dielectric film 2, which does not have a through hole, so that the dielectric protective film FC4 can completely protect the high-voltage side dielectric film 2 from the dielectric barrier discharge in the discharge space 4.

[0324] The second aspect of the activated gas generator of the fifth embodiment having such an electrode unit 831 has the same effects as the basic aspect of the activated gas generator having the electrode unit 83, and further has the following unique effects.

[0325] In the electrode unit 831 of the active gas generating apparatus which is the second aspect of the fifth embodiment, the dielectric film support member 10C supports the peripheral area of ​​the high-voltage side dielectric film 2 from below with the support surface 10F which is the dielectric support surface, and also supports the peripheral area of ​​the dielectric protective film FC4 from below with the support surface 10YF which is the protective member support surface.

[0326] Furthermore, in the electrode unit 831, the difference value Δd between the support surface 10F and the support surface 10YF is set so that a protective member space 40 with a gap length Δ40 is formed between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0327] Therefore, the active gas generating apparatus according to the second aspect of the fifth embodiment can stably fix the dielectric protective film FC4 having the protective member space 40 between it and the high-pressure side dielectric film 2.

[0328] Furthermore, the plurality of gas outlets 70 in the second aspect of the activated gas generator of embodiment 5 having the electrode unit 831 shown in Figures 49 to 51 have the same characteristics as the electrode unit 55 of embodiment 2. That is, the plurality of gas outlets 70 are provided in such a manner that they approach each other downward so that the plurality of partially activated gases collide in a collision region 80, and the collision region 80 is located within the downward tapered region 41t (see Figures 36 and 37) or above the downward tapered region 41t.

[0329] As a result, the second aspect of the active gas generation apparatus of embodiment 5 can supply uniform active gas G2 to the downstream processing space, similar to the electrode unit 55 of embodiment 2 and the electrode unit 811, which is the second aspect of embodiment 3.

[0330] In the fifth embodiment, the electrode unit 831 is shown as an example of a practical structure for realizing the electrode unit 830, but the electrode unit 830 may be realized by other structures.

[0331] 52 is an explanatory diagram schematically illustrating a basic aspect of an electrode unit 84 used in an active gas generator according to embodiment 6. The active gas generator according to embodiment 6 has an electrode unit 84 that activates a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0332] As shown in the same figure, the electrode unit 84 comprises a high-voltage side electrode component E10 which is the first electrode component, and a ground side electrode component E22 which is the second electrode component provided below the high-voltage side electrode component E10.

[0333] The high-voltage side electrode configuration E10, which is the first electrode configuration portion, includes a dielectric film F2, which is a dielectric film for the first electrode, and a high-voltage electrode F5, which is a conductive film for the first electrode, provided on the upper surface of the dielectric film F2.

[0334] The ground side electrode configuration portion E22, which is the second electrode configuration portion, includes a dielectric film F3, which is a dielectric film for the second electrode, and a ground electrode F6, which is a conductive film for the second electrode, provided on the lower surface of the dielectric film F3.

[0335] The electrode unit 84 of the sixth embodiment is characterized by a structure in which a dielectric protective film FC5, which is a dielectric protective member, is provided above the dielectric film F3, which is a second electrode dielectric film, via a minute gap, the protective member space 40. That is, the ground-side electrode configuration portion E22 in the electrode unit 84 of the sixth embodiment is configured to include the dielectric film F3, the ground electrode F6, and the dielectric protective film FC5.

[0336] A dielectric space 18 is provided between the dielectric film F2 and the dielectric film F3 via the protective member space 40 and the dielectric protective film FC5. Specifically, the space where the dielectric film F2 and the dielectric protective film FC5 face each other forms the dielectric space 18. Within this dielectric space 18, a discharge space 4 is formed, which includes a main discharge space that is an area where the high-voltage electrode F5 and the ground electrode F6 overlap in plan view.

[0337] Thus, in the electrode unit 84 of embodiment 6, of the dielectric films F2 and F3, the dielectric film F3 is the dielectric film to be protected, and a dielectric protective film FC5 is provided on the dielectric space 18 side of the dielectric film F3 that is the dielectric film to be protected.

[0338] The material of the dielectric protective film FC5, like the dielectric protective films FC2 to FC4, has the protective property of blocking irradiation of the dielectric film F3, which is the dielectric film to be protected, with ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space 4, and not reacting chemically with the ions.

[0339] The electrode unit 84 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage electrode configuration part E10 and the ground electrode F6 of the ground-side electrode configuration part E22. Specifically, an AC voltage is applied to the high-voltage electrode F5, and the ground electrode F6 is set to the ground potential, which is the reference potential.

[0340] The electrode unit 84 , which is the basic aspect of the sixth embodiment, generates a dielectric barrier discharge in the discharge space 4 when a voltage is applied from the AC power supply 15 .

[0341] In the electrode unit 84 of the basic embodiment shown in Fig. 52, there are no particular limitations on the manner in which the raw material gas G1 is supplied to the discharge space 4 or the manner in which the active gas G2 is ejected. For example, in Fig. 52, the raw material gas G1 may be supplied from the left side of the drawing, and the active gas G2 may be ejected from the right side of the drawing.

[0342] In the active gas generator of the sixth embodiment having the electrode unit 84, the dielectric protective film FC5, which is a dielectric protective member having the above-mentioned protective properties, is present between the dielectric space 18 including the discharge space 4 and the dielectric film F3, which is the dielectric film to be protected. This makes it possible to suppress the dielectric film reaction phenomenon in which the dielectric film F3 reacts with ions when a dielectric barrier discharge occurs in the discharge space 4.

[0343] As a result, the active gas generating device, which is the basic aspect of embodiment 6, can generate high-purity active gas G2 by reliably preventing elements of the dielectric film F3 and the like from being mixed into the discharge space 4 due to the dielectric film reaction phenomenon.

[0344] In addition, the electrode unit 84 does not require any changes to the constituent materials of the dielectric films F2 and F3, and can be constructed simply by adding the dielectric protective film FC5, so the manufacturing process for the electrode unit 84 does not become complicated.

[0345] In the basic aspect of the active gas generating apparatus of embodiment 6, the dielectric protective film FC5, which is the dielectric protective member, has a protective member space 40 between it and the dielectric film F3, which is the dielectric film to be protected, so that the dielectric protective film FC5 and the dielectric film F3 do not need to be in close contact with each other, thereby simplifying the apparatus configuration.

[0346] Furthermore, by setting the gap length Δ40 of the protective member space 40 to a length that is sufficiently shorter than the gap length Δ4 of the discharge space 4, it is possible to relatively easily set the applied voltage from the AC power supply 15, the discharge space 4, and the protective member space 40 so as to satisfy the above-mentioned discharge generation requirements.

[0347] As a result, the active gas generating device of the sixth embodiment can accurately generate the active gas G2 between the dielectric film F2 and the dielectric film F3 without creating a space other than the discharge space 4 where a discharge phenomenon occurs.

[0348] The grounded electrode component E22 of the electrode unit 84 includes a dielectric protective film FC5. In the active gas generator of the fifth embodiment having this electrode unit 84, by applying a voltage between the dielectric films F2 and F3, a dielectric barrier discharge is generated in the discharge space 4 without generating a dielectric barrier discharge in the protective member space 40 formed between the dielectric protective film FC5, which serves as a dielectric protective member, and the dielectric film F3.

[0349] As a result, the activated gas generating device of the sixth embodiment can activate the source gas G1 supplied to the discharge space 4 to generate the activated gas G2.

[0350] Furthermore, the dielectric protection member corresponding to the dielectric protection film FC5 can achieve the above-mentioned effects if it is provided on the dielectric space 18 side of the dielectric film to be protected, which is at least one of the dielectric films F2 and F3.

[0351] Therefore, the electrode unit 84 may be expanded to further provide a dielectric protective film FC4 on the lower surface side of the dielectric film F2 via the protective member space 40. Similarly, the electrode unit 83 of the fifth embodiment may be expanded to further provide a dielectric protective film FC5 on the upper surface side of the dielectric film F3 via the protective member space 40.

[0352] In this case, two protective member spaces 40 are formed, one on the lower surface side of dielectric film F2 and the other on the upper surface side of dielectric film F3. The gap length Δ40 of each of the two protective member spaces 40 is set to be sufficiently shorter than the gap length Δ4 of discharge space 4 so as to satisfy the above-mentioned discharge generation requirements.

[0353] <Embodiment 7> (Basic form) Figure 53 is an explanatory diagram schematically showing a basic form of an electrode unit 91 used in an active gas generator of embodiment 7. The active gas generator of embodiment 7 has an electrode unit 91 that activates a raw material gas G1 supplied to a discharge space 4 to generate an active gas G2.

[0354] As shown in the same figure, the electrode unit 91 comprises a high-voltage side electrode component E13 which is a first electrode component, and a ground side electrode component E20 which is a second electrode component provided below the high-voltage side electrode component E13.

[0355] The high-voltage side electrode configuration portion E13, which is the first electrode configuration portion, includes a dielectric film F2, which is a dielectric film for the first electrode, and a high-voltage electrode F5, which is a conductive film for the first electrode, provided on the upper surface of the dielectric film F2.

[0356] The ground side electrode configuration E20, which is the second electrode configuration portion, includes a dielectric film F3, which is a dielectric film for the second electrode, and a ground electrode F6, which is a conductive film for the second electrode, provided on the lower surface of the dielectric film F3.

[0357] The high-voltage side electrode configuration part E13 in the electrode unit 91 of the seventh embodiment is characterized by further including a conductor film F7 which is an electrode reinforcing conductive film and a dielectric protective film FC2 which is a dielectric protective member. The thickness of the dielectric protective film FC2 is set to 1 mm or less.

[0358] The conductive film F7, which is an electrode reinforcing conductive film, is provided in close contact with the lower surface of the dielectric film F2, which is the dielectric film for the first electrode. The conductive film F7 may be, for example, a thin metal film, and the thickness of the conductive film F7 is set to, for example, 500 nm or less.

[0359] The dielectric protective film FC2, which is a dielectric protective member, covers the entire conductor film F7 and is provided on the underside of the high-voltage electrode F5. Therefore, the high-voltage side electrode configuration portion E13 has a conductor film-embedded laminated structure, which is a laminated structure in which the dielectric film F2, conductor film F7, and dielectric protective film FC2 are stacked in this order. In the conductor film-embedded laminated structure, there are no gaps between the dielectric film F2 and conductor film F7, or between the conductor film F7 and dielectric protective film FC2, or between the dielectric film F2 and dielectric protective film FC2. The conductor film F7 in the conductor film-embedded laminated structure is set to an electrically floating state.

[0360] In this way, the high-voltage side electrode component E13 in the electrode unit 91 of the seventh embodiment is configured to include the dielectric film F2, the high-voltage electrode F5, the conductor film F7, and the dielectric protective film FC2.

[0361] A dielectric space 18 is formed between the dielectric films F2 and F3 via the conductive film F7 and the dielectric protective film FC2. Specifically, the space where the dielectric protective film FC2 and the dielectric film F3 face each other forms the dielectric space 18.

[0362] Thus, in the electrode unit 91 of embodiment 7, of the dielectric film F2 and the dielectric film F3, the dielectric film F2 is the dielectric film to be protected, and a dielectric protective film FC2 is provided on the dielectric space 18 side of the dielectric film F2, which is the dielectric film to be protected.

[0363] Hereinafter, the same structures as those of the electrode unit 81 of the third embodiment shown in FIG. 42 will be denoted by the same reference numerals and explanations thereof will be omitted as appropriate, and the description will focus on the characteristic parts of the electrode unit 91.

[0364] The dielectric protective film FC2, which is a dielectric protective member, covers the entire conductor film F7, which is an electrode reinforcing conductive film, and is provided on the underside of the dielectric film F2, which is a first electrode dielectric film. As described above, the high-voltage side electrode configuration portion E13 has a conductor film-embedded laminated structure that is a laminated structure including the dielectric film F2, the conductor film F7, and the dielectric protective film FC. Within the conductor film-embedded laminated structure, there are no gaps between the dielectric film F2, the conductor film F7, and the dielectric protective film FC.

[0365] The space where the dielectric protective film FC2 and the dielectric film F3 face each other is the dielectric space 18, and in the seventh embodiment, the dielectric film to be protected is the dielectric film F2.

[0366] The conductive film F7 has a planar shape that is wider than the high-voltage electrode F5 in plan view and narrower than the dielectric film F2 and the dielectric protective film FC2 in plan view. The ground electrode F6 includes the conductive film F7 in plan view.

[0367] A relatively large discharge space 4e is formed within the dielectric space 18 by including an extended main discharge space, which is a region where the conductive film F7 and the ground electrode F6 overlap in a planar view. That is, the main discharge space in the electrode unit 91 of the seventh embodiment is extended into an extended main discharge space by the conductive film F7. Here, the extended main discharge space is a region where the conductive film F7 and the ground electrode F6 overlap in a planar view within the dielectric space 18.

[0368] The electrode unit 91 further includes an AC power supply 15 that applies an AC voltage as an applied voltage between the high-voltage electrode F5 of the high-voltage electrode configuration part E13 and the ground electrode F6 of the ground-side electrode configuration part E20. Specifically, an AC voltage is applied to the high-voltage electrode F5, and the ground electrode F6 is set to the ground potential, which is the reference potential.

[0369] In the electrode unit 91 which is the basic aspect of the seventh embodiment, a dielectric barrier discharge occurs in the discharge space 4 when a voltage is applied from the AC power supply 15 .

[0370] In the electrode unit 91 of the basic embodiment shown in Fig. 53, there are no particular limitations on the manner in which the raw material gas G1 is supplied to the discharge space 4 or the manner in which the active gas G2 is ejected. For example, in Fig. 53, the raw material gas G1 may be supplied from the left side of the drawing, and the active gas G2 may be ejected from the right side of the drawing.

[0371] The activated gas generator of embodiment 7 having the electrode unit 91 as the basic configuration has the same effects as the activated gas generator of embodiment 3 having the electrode unit 81, and also has the unique effects described below.

[0372] Figures 54 to 56 are explanatory diagrams showing the effects of the active gas generator of embodiment 7. Figure 54 is an explanatory diagram showing the discharge space 4 of electrode unit 81 which is the basic mode of embodiment 3, Figure 55 is an explanatory diagram showing the discharge space 4e of electrode unit 91 which is the basic mode of embodiment 7, and Figure 56 is an explanatory diagram showing the discharge space 4e of electrode unit 81X which is an extension of electrode unit 81.

[0373] The formation area of ​​the high-voltage electrode F5 is set to be the same between the electrode unit 81 and the electrode unit 91. Furthermore, the formation area of ​​the conductor film F7 and the formation area of ​​the extended high-voltage electrode F5e are set to be the same between the electrode unit 91 and the electrode unit 81X.

[0374] 56 includes an extended high-voltage electrode F5e, a dielectric film F2, and a dielectric protective film FC2. In each of the electrode units 81, 91, and 81X, the ground electrode F6 includes, in plan view, a high-voltage electrode F5, a conductor film F7, and an extended high-voltage electrode F5e.

[0375] The discharge space 4e in the electrode unit 91 shown in FIG. 55 includes an extended main discharge space which is a region in the dielectric space 18 where the conductive film F7 and the ground electrode F6 overlap in plan view.

[0376] The active gas generator according to the seventh embodiment has a conductor film F7, which is an electrode-reinforcing conductive film, interposed between a dielectric protective film FC2, which is a dielectric protective member, and a dielectric film F2, which is a dielectric film for a first electrode. The conductor film F7 has a shape characteristic that it is wider than the high-voltage electrode F5 in plan view.

[0377] For example, if the planar shapes of the high-voltage electrode F5 and the conductive film F7 are both circular, and the diameter of the high-voltage electrode F5 is dA (mm), the diameter of the conductive film F7 is set to (dA + 20 mm). In this way, the high-voltage electrode F5 has a shape characteristic that results in a smaller formation area than the conductive film F7.

[0378] Therefore, in the basic aspect of the activated gas generating device of the seventh embodiment, the formation area of ​​the conductive film F7 is enlarged compared to the high-voltage electrode F5, and accordingly, a discharge space 4e including an extended main discharge space with a relatively large volume can be obtained.

[0379] 54, in the electrode unit 81, the discharge space 4 is formed including a main discharge space, which is an area where the high-voltage electrode F5 and the ground electrode F6 overlap in a plan view within the dielectric space 18.

[0380] On the other hand, as shown in FIG. 55, the electrode unit 91 of the seventh embodiment has a larger formation area of ​​the conductive film F7 compared to the high-voltage electrode F5.

[0381] The conductive film F7, which is an electrode-reinforcing conductive film having conductivity, has a sufficiently small internal resistance and the property of making the internal potential uniform, so that an electric field that generates a discharge can be generated from the conductive film F7. Therefore, the electrode unit 91 can form a relatively large discharge space 4e in the dielectric space 18, including an extended main discharge space that is a region where the conductive film F7 and the ground electrode F6 overlap in a plan view.

[0382] The thickness of the conductor film F7 is set to, for example, 50 nm. It is desirable to set the thickness of the conductor film F7 so as not to hinder the reduction in resistance and to prevent gaps from occurring between the dielectric film F2, the conductor film F7, and the dielectric protective film FC2 in the conductor film-embedded stacked structure.

[0383] On the other hand, the electrode unit 81X shown in FIG. 56 forms a discharge space 4e equivalent to that of the electrode unit 91 without providing a conductive film F7 by expanding the formation area of ​​the extended high-voltage electrode F5e.

[0384] However, because the extended high-voltage electrode F5e is exposed to the outside, the electrode clearance distance ΔF5 between the extended high-voltage electrode F5e and the dielectric film support member M10 is shortened by the amount of its formation area being larger than that of the high-voltage electrode F5. As a result, the electrode unit 81X is more likely to have problems occurring between the extended high-voltage electrode F5e and the dielectric film support member M10.

[0385] For example, if the dielectric film support member M10 is a conductor set at ground level, if the electrode clearance distance ΔF5 between the extended high-voltage electrode F5e and the dielectric film support member M10 is short, there is a risk that the dielectric film support member M10 and the extended high-voltage electrode F5e will be short-circuited via surface discharge.

[0386] On the other hand, in the active gas generating device which is the basic aspect of embodiment 7, the conductive film F7 is provided within a conductive film-embedded laminated structure, so there is "zero" possibility that the conductive film F7 will be electrically connected to external components such as the dielectric film support member M10.

[0387] Therefore, the active gas generating apparatus that is the basic aspect of embodiment 7 can sufficiently reduce the possibility of the occurrence of defects such as the above-mentioned short circuits by minimizing the formation area of ​​the high-voltage electrode F5 and setting the electrode clearance distance ΔF5 between the high-voltage electrode F5 and the dielectric film support member M10 to a sufficiently long distance.

[0388] In this way, the active gas generating device that is the basic aspect of embodiment 7 can minimize the formation area of ​​the high-voltage electrode F5 and generate a dielectric barrier discharge in the discharge space 4e that includes a relatively large (extended) main discharge space.

[0389] In the active gas generating device of the basic aspect of embodiment 7, no gaps are created between the dielectric film F2, the conductor film F7, and the dielectric protective film FC2 inside the conductor film-embedded laminated structure, so that active gas G2 can be obtained with high precision without creating any space other than the discharge space 4e where a discharge phenomenon occurs between the dielectric film F2 and the dielectric film F3.

[0390] The high-voltage side electrode component E13 of the electrode unit 91 includes a conductor film F7 and a dielectric protective film FC2. The activated gas generator of the basic aspect of the seventh embodiment having this electrode unit 91 can activate the source gas G1 supplied to the discharge space 4e in the dielectric space 18 and generate the activated gas G2 by applying an AC voltage between the high-voltage electrode F5 and the ground electrode F6 from the AC power supply 15.

[0391] (Second Aspect) Figure 57 is an explanatory diagram showing the cross-sectional structure of an electrode unit 911 used in an activated gas generator according to a second aspect of embodiment 7. Figure 58 is an explanatory diagram showing details of a focused region R4 in Figure 57. An XYZ Cartesian coordinate system is depicted in each of Figures 57 and 58.

[0392] The electrode unit 911 shown in Fig. 57 is a practical structure in which the electrode unit 91 of the basic configuration shown in Fig. 53 is applied to the electrode unit 55 of embodiment 2. In the electrode unit 911, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground-side dielectric film 3 is used as the dielectric film F3, the power feeder 5 is used as the high-voltage electrode F5, and the conductor film F71 is used as the conductor film F7. Note that the conductive film 7 (Figs. 20 and 21), not shown, is used as the ground electrode F6.

[0393] In this way, the active gas generator having a practical structure according to the second aspect of the seventh embodiment is an active gas generator having the electrode unit 911 .

[0394] The overall configuration of the second aspect of the active gas generator of embodiment 7 is similar to that of the active gas generator 71 shown in Fig. 1. Therefore, the electrode unit 911 shown in Fig. 57 corresponds to any one of the electrode units 51 to 53 in the active gas generator 75 having the overall configuration shown in Fig. 1.

[0395] That is, the second aspect of the active gas generator of embodiment 7, like the active gas generator 71 of embodiment 1, comprises a plurality of electrode units, ie, electrode units 51 to 53, and a conductive housing 1 that houses the electrode units 51 to 53 in an internal housing space S1 (see Figure 8).

[0396] In the following, structures similar to the electrode unit 50 (51 to 53) of embodiment 1, the electrode unit 55 of embodiment 2, or the electrode unit 831 of embodiment 5 will be given the same symbols and explanations will be omitted as appropriate, and the description will focus on the characteristic parts of the electrode unit 911.

[0397] 57, in the electrode unit 911, like the electrode unit 50 (51 to 53) of embodiment 1, the lower surface of the high-voltage-side dielectric film 2 has a recessed bottom surface 26 and a convex bottom surface 23 provided around the recessed bottom surface. The convex bottom surface 23 is set to be formed higher in the height direction along the +Z direction than the recessed bottom surface 26. A conductor film F7 and a dielectric protective film FC2 are provided on the recessed bottom surface 26, and neither the conductor film F7 nor the dielectric protective film FC2 is provided on the convex bottom surface 23.

[0398] The electrode unit 911 includes a dielectric film support member 10B having a support surface 10F that serves as a dielectric support surface that supports the convex bottom surface 23 of the high-voltage side dielectric film 2 from below.

[0399] As shown in Figure 57, the dielectric film support member 10B further has a fixing auxiliary surface 10XF which serves as a protective member fixing auxiliary surface located below the peripheral area of ​​the dielectric protective film FC2 provided on the bottom surface 26 of the recess of the high-voltage side dielectric film 2.

[0400] Like the electrode units 50 and 55, the electrode unit 911 is provided with a dielectric film suppression member 11 that suppresses the high-voltage side dielectric film 2, which is the dielectric film for the first electrode, from above, and the dielectric film suppression member 11 does not overlap with the power supply body 5 in a planar view.

[0401] In the dielectric film support member 10B, an O-ring 17, which functions as an elastic member, is inserted between the auxiliary fixing surface 10XF, which serves as the protective member fixing auxiliary surface, and the lower surface of the dielectric protective film FC2. The conductive film F71 is not formed in the area that overlaps with the auxiliary fixing surface 10XF in a plan view. Therefore, the elastic force of the O-ring 17 brings the recess bottom surface 26 of the high-voltage side dielectric film 2 into intimate contact with the upper surface of the dielectric protective film FC2. This point will be described in detail below.

[0402] 57, the O-ring 17 is deformed by being sandwiched between the dielectric film support member 10B and the high-voltage side dielectric film 2 via the dielectric protective film FC2. The elastic force of the O-ring 17, which functions as an elastic member, causes the upper surface of the dielectric protective film FC2 to adhere tightly to the lower surface of the high-voltage side dielectric film 2, on which the conductor film F71 is not formed.

[0403] The electrode unit 911 used in the second aspect of the seventh embodiment provides the same effects as those of the second aspect of the third embodiment and the basic aspect of the seventh embodiment, as well as the following unique effects.

[0404] The conductor film built-in laminated structure consisting of the high voltage side dielectric film 2 (dielectric film F2), the conductor film F71 (conductor film F7) and the dielectric protective film FC2 can be obtained by, for example, the following first and second manufacturing methods.

[0405] The first manufacturing method includes steps S11 to S14, which are described below.

[0406] S11: A conductor film F71 is formed on the upper surface of the dielectric protective film FC2 to obtain a conductor-film-attached dielectric protective film FCE (a combination structure of the dielectric protective film FC2 and the conductor film F71) shown in Fig. 58. The conductor film F7 is formed on the dielectric protective film FC2 by sputtering or ion plating.

[0407] S12: The conductor-film-attached dielectric protective film FCE is placed on the auxiliary fixing surface 10XF of the dielectric film support member 10B via the O-ring 17. In the conductor-film-attached dielectric protective film FCE, the conductor film F7 is not formed above the auxiliary fixing surface 10XF.

[0408] S13: The high voltage side dielectric film 2 is placed on the support surface 10F of the dielectric film support member 10B.

[0409] S14: A dielectric film suppressing member 11 is provided to suppress the high voltage side dielectric film 2 from above.

[0410] After step S14 is performed, the elastic force of the O-ring 17, which functions as an elastic member, causes the upper surface of the conductive film F71 and the upper surface of the dielectric protective film FC2 (on which the conductive film F71 is not provided) to adhere to the lower surface of the high-voltage side dielectric film 2.

[0411] In this way, the first manufacturing method including steps S11 to S14 can obtain a conductor film-embedded laminated structure without creating gaps inside. In order to accurately form the conductor film F71 in step S11, it is desirable to increase the flatness of the top surface of the dielectric protective film FC2 by polishing or the like. For example, if the thickness of the conductor film F71 is set to 20 nm, it is desirable to set the surface roughness of the top surface of the dielectric protective film FC2 to 20 nm or less.

[0412] The second manufacturing method includes steps S21 to S24, which are shown below.

[0413] S21: A conductor film F7 is formed on the lower surface of the high-voltage side dielectric film 2 to obtain a conductor-coated dielectric film F2E (a combination structure of the dielectric film F2 and the conductor film F7) shown in Fig. 58. The conductor film F7 is formed on the high-voltage side dielectric film 2 by sputtering or ion plating.

[0414] S22: The dielectric protective film FC2 is placed on the auxiliary fixing surface 10XF of the dielectric film support member 10B via the O-ring 17. In the conductive film-attached dielectric film F2E, the conductive film F7 is not formed above the auxiliary fixing surface 10XF.

[0415] S23: The conductor film-equipped dielectric film F2E is placed on the support surface 10F of the dielectric film support member 10B. No conductor film F7 is formed on the lower surface of the conductor film-equipped dielectric film F2E placed on the support surface 10F.

[0416] S24: A dielectric film suppressing member 11 is provided to suppress the conductor film-attached dielectric film F2E from above.

[0417] After step S24 is performed, the elastic force of the O-ring 17, which functions as an elastic member, causes the upper surface of the dielectric protective film FC2 to adhere to the lower surface of the conductive film F7 and the lower surface of the high-voltage side dielectric film 2 (on which the conductive film F7 is not provided).

[0418] In this way, the second manufacturing method including steps S21 to S24 can obtain a conductor film-embedded laminated structure without creating gaps inside. In order to accurately form the conductor film F7 in step S21, it is desirable to increase the flatness of the lower surface of the high-voltage-side dielectric film 2 by polishing or the like. For example, if the thickness of the conductor film F71 is set to 20 nm, it is desirable to set the surface roughness of the lower surface of the high-voltage-side dielectric film 2 to 20 nm or less.

[0419] The electrode unit 911 does not require any changes to the materials constituting the high-voltage-side dielectric film 2 and the ground-side dielectric film 3, and the main changes from the electrode unit 55 are the change from the dielectric film support member 10 to a dielectric film support member 10B, and the addition of a conductor film F7 and a dielectric protective film FC2. Therefore, the manufacturing process for the electrode unit 911, including the first manufacturing method or the second manufacturing method described above, does not become complicated.

[0420] In the second mode of the activated gas generator of the seventh embodiment, the dielectric film support member 10B of the electrode unit 911 supports the bottom surface 23 of the convex portion of the ground-side dielectric film 3 from below with a support surface 10F that serves as the dielectric support surface. Furthermore, the elastic force of the O-ring 17, which functions as an elastic member, brings the bottom surface 26 of the concave portion of the high-voltage-side dielectric film 2 and the upper surface of the dielectric protective film FC2 into close contact with each other.

[0421] Therefore, the second aspect of the activated gas generator of the seventh embodiment can stably fix the conductive film built-in laminated structure with a relatively simple structure in which the dielectric film support member 10B and the O-ring 17 are provided.

[0422] In addition, by minimizing the area of ​​the power supply element 5 that serves as the conductive film for the first electrode, a sufficient insulation distance can be ensured between the power supply element 5 and the dielectric film suppressing member 11 .

[0423] Therefore, the second aspect of the activated gas generating device of the seventh embodiment can obtain a structure that reliably avoids problems that may occur between the power supply 5 and the dielectric film suppressing member 11.

[0424] In addition, the second aspect of the active gas generating device of embodiment 7 utilizes the elastic force of the O-ring 17, thereby enabling improvement in the accuracy of adhesion between the bottom surface 26 of the recess in the high-pressure side dielectric film 2 and the upper surface of the dielectric protective film FC2 with a relatively simple structure.

[0425] Furthermore, in the second mode of the activated gas generator of embodiment 7 having the electrode unit 911 shown in Figure 57, the multiple gas outlets 70 have the same characteristics as the electrode unit 55 of embodiment 2 and the electrode unit 811 of the second mode of embodiment 3. That is, the multiple gas outlets 70 are provided in a mode in which they approach each other downward so that the multiple partially activated gases collide in a collision region 80, and the collision region 80 is located within the downward tapered region 41t (see Figures 36 and 37) or above the downward tapered region 41t.

[0426] Therefore, the second aspect of the active gas generation apparatus of embodiment 7 can supply uniform active gas G2 to the downstream processing space, similar to the active gas generation apparatus of embodiment 2 and the second aspect of embodiment 3.

[0427] <Embodiment 8> Figure 59 is an explanatory diagram showing the cross-sectional structure of an activated gas generation apparatus according to first and second aspects of embodiment 8. Figure 60 is an explanatory diagram showing the detailed structure of the region of interest R5 in Figure 59 in the first aspect of embodiment 8. Figure 61 is an explanatory diagram showing the detailed structure of the region of interest R5 in Figure 59 in the second aspect of embodiment 8. An XYZ Cartesian coordinate system is depicted in each of Figures 59 to 61.

[0428] An electrode unit 931 shown in FIG. 59 has a practical structure corresponding to the electrode unit 831 of the fifth embodiment shown in FIG.

[0429] The basic aspect of the eighth embodiment, which corresponds to the first aspect, is a structure in which, in the electrode unit 83 shown in Figure 47, a conductor film F7 is provided on the lower surface of the dielectric film F2, and a protective material space 40 is provided between the lower surface of the conductor film F7 and the upper surface of the dielectric protective film FC4.

[0430] Furthermore, the basic aspect of embodiment 8 corresponding to the second aspect is a structure in which, in the electrode unit 83 shown in Figure 47, a conductor film F7 is provided on the upper surface of a dielectric protective film FC4, and a protective material space 40 is provided between the upper surface of the conductor film F7 and the lower surface of the dielectric film F2.

[0431] In the electrode unit 931, the high-voltage side dielectric film 2 is used as the dielectric film F2, the ground-side dielectric film 3 is used as the dielectric film F3, the power supply 5 is used as the high-voltage electrode F5, the conductor film F72 (first embodiment) or the conductor film F73 (second embodiment) is used as the conductor film F7, and the dielectric film support member 10C is used as the dielectric film support member M10 shown in Figure 48. The ground electrode F6 is provided with a conductive film 7 (Figures 20 and 21), not shown. The conductor film F72 is shown in Figure 59.

[0432] In this way, the active gas generators of the first and second aspects of the eighth embodiment are active gas generators having the electrode unit 931 .

[0433] The overall configurations of the first and second aspects of the active gas generator of embodiment 8 are similar to that of the active gas generator 71 shown in Fig. 1. Therefore, the electrode unit 931 shown in Fig. 59 corresponds to any one of the electrode units 51 to 53 in the active gas generator 75 having the overall configuration shown in Fig. 1.

[0434] That is, the first and second aspects of the active gas generator of embodiment 8, like the active gas generator 71 of embodiment 1, comprise a plurality of electrode units, ie, electrode units 51 to 53, and a conductive housing 1 that houses the electrode units 51 to 53 in an internal housing space S1 (see Figure 8).

[0435] In the following, structures similar to the electrode unit 50 (51 to 53) of embodiment 1, the electrode unit 55 of embodiment 2, or the electrode unit 831 of embodiment 5 will be given the same symbols and explanations will be omitted as appropriate, and the description will focus on the characteristic parts of the electrode unit 931.

[0436] 59, like the electrode units 50 (51 to 53) of embodiment 1, the electrode unit 931 has a recessed portion bottom surface 26 on the lower surface of the high-voltage-side dielectric film 2 and a protruding portion bottom surface 23 provided around the recessed portion bottom surface. The protruding portion bottom surface 23 is formed at a higher position in the height direction along the +Z direction than the recessed portion bottom surface 26.

[0437] In the first aspect shown in Figure 60, a conductive film F72 is provided on the underside of the bottom surface 26 of the recess, and a dielectric protective film FC4 is provided below the conductive film F72 via a protective member space 40, and neither the conductive film F72 nor the dielectric protective film FC4 is provided on the bottom surface 23 of the convex portion.

[0438] Thus, in the first embodiment shown in Figure 60, a dielectric protective film FC4 is arranged on the underside of the high-voltage side dielectric film 2 and the conductive film F72 via a protective member space 40 having a minute gap length Δ40.

[0439] Therefore, in the first aspect of the electrode unit 931, the high-voltage side electrode configuration part E14 is arranged in the height direction (+Z direction) in the following order: dielectric protective film FC4, protective member space 40, conductor film F72, high-voltage side dielectric film 2, and power supply body 5.

[0440] On the other hand, in the second aspect shown in Figure 61, a dielectric protective film FCE with a conductor film, which is a combined structure of a conductor film F73 and a dielectric protective film FC4, is provided below the bottom surface 26 of the recess via a protective member space 40, and neither the conductor film F73 nor the dielectric protective film FC4 is provided on the bottom surface 23 of the convex portion.

[0441] Thus, in the second embodiment shown in Figure 61, a dielectric protective film FCE with a conductor film, which is a combined structure of a conductor film F73 and a dielectric protective film FC4, is arranged on the underside of the high-voltage side dielectric film 2 via a protective member space 40 having a minute gap length Δ40.

[0442] Therefore, in the second aspect of the electrode unit 931, the high-voltage side electrode configuration part E15 is arranged in the height direction (+Z direction) in the following order: dielectric protective film FC4, conductor film F73, protective member space 40, high-voltage side dielectric film 2, and power supply body 5.

[0443] Hereinafter, when the first aspect shown in FIG. 60 and the second aspect shown in FIG. 61 are collectively referred to as the "actual structure of embodiment 8" or simply as "embodiment 8."

[0444] In the actual structure of the eighth embodiment, a discharge space 4e with a gap length Δ4 is ​​formed between the dielectric protective film FC4 and the ground-side dielectric film 3. A power feeder 5 is provided on the upper surface of the high-voltage-side dielectric film 2, and a ground conductor 60 is provided on the lower surface of the ground-side dielectric film 3.

[0445] The activated gas generating apparatus according to the first aspect of the eighth embodiment shown in FIGS. 59 and 60 has the following features.

[0446] The conductive film F72, which is an electrode reinforcing conductive film, is provided in close contact with the lower surface of the high voltage side dielectric film 2, which is the first electrode dielectric film.

[0447] The dielectric protective film FC4, which is a dielectric protective member, is provided below the conductive film F72, and the dielectric protective film FC4 includes the entire conductive film F72 in plan view, and a protective member space 40 is provided between the dielectric protective film FC4 and the conductive film F72. Note that a part of the protective member space 40 where the conductive film F72 is not formed becomes a space between the dielectric protective film FC4 and the high-voltage-side dielectric film 2.

[0448] The space where the dielectric protective film FC4 and the ground side dielectric film 3, which is the second electrode dielectric film, face each other is the dielectric space 18, and the high voltage side dielectric film 2 is the dielectric film to be protected.

[0449] The high-voltage side electrode component E14, which is the first electrode component, is characterized by further including a dielectric protective film FC4 and a conductor film F72.

[0450] The device further includes an AC power supply 15 that applies an applied voltage VP between the power supply 5 of the high-voltage side electrode configuration portion E14 and the ground conductor 6 of the ground side electrode configuration portion E20, and when the applied voltage from the AC power supply 15 is applied, a dielectric barrier discharge is generated in the discharge space 4e.

[0451] The conductive film F72 has a planar shape that is wider than the power feeder 5 in plan view and narrower than the high-voltage side dielectric film 2 in plan view, and the ground conductor 6 includes the conductive film F72 in plan view.

[0452] The discharge space 4e includes an extended main discharge space which is a region in the dielectric space 18 where the conductive film F72 and the ground conductor 6 overlap in plan view.

[0453] The applied voltage from the AC power supply 15, the discharge space 4e, and the protective member space 40 are set so as to satisfy the discharge generation requirements that, when the applied voltage is applied, a dielectric barrier discharge occurs in the discharge space 4e, but a dielectric barrier discharge does not occur in the protective member space 40.

[0454] On the other hand, the activated gas generating apparatus according to the second aspect of the eighth embodiment shown in FIGS. 59 and 61 has the following features.

[0455] The conductor film F73, which is an electrode-reinforcing conductive film, is provided in close contact with the upper surface of the dielectric protective film FC4, and the dielectric protective film FC4 includes the entire conductor film F73 in plan view.

[0456] A protective member space 40 is provided between the conductive film F73 and the high-voltage side dielectric film 2. Note that a part of the protective member space 40 where the conductive film F73 is not formed becomes a space between the dielectric protective film FC4 and the high-voltage side dielectric film 2.

[0457] The space where the dielectric protective film FC4 and the ground side dielectric film 3 face each other is a dielectric space 18, and the high voltage side dielectric film 2 is the dielectric film to be protected.

[0458] The high-voltage side electrode component E15 is characterized by further including a dielectric protective film FC4 and a conductive film F73.

[0459] The device further includes an AC power supply 15 that applies a voltage between the power supply 5 of the high-voltage side electrode configuration portion E15 and the ground conductor 6 of the ground side electrode configuration portion E20, and when the AC power supply 15 applies a voltage, a dielectric barrier discharge is generated in the discharge space 4e.

[0460] The conductive film F73 has a planar shape that is wider than the power feeder 5 in plan view and narrower than the high-voltage side dielectric film 2 and the dielectric protective film FC4 in plan view, and the ground conductor 6 includes the conductive film F73 in plan view.

[0461] A discharge space 4e is formed including an extended main discharge space, which is a region in the dielectric space 18 where the conductive film F73 and the ground conductor 6 overlap in plan view.

[0462] The applied voltage of the AC power supply 15, the discharge space 4e, and the protective member space 40 are set so as to satisfy the discharge generation requirements that, when the applied voltage is applied, a dielectric barrier discharge occurs in the discharge space 4e, but a dielectric barrier discharge does not occur in the protective member space 40.

[0463] In the electrode unit 931 of the eighth embodiment, in order to satisfy the above-mentioned discharge generation requirements, the gap length Δ40, which is the discharge distance in the protective member space 40, is set to be sufficiently shorter than the gap length Δ4, which is the discharge distance in the discharge space 4e. This feature is common to the first and second aspects.

[0464] As shown in FIG. 59, the dielectric film support member 10C further has a support surface 10YF that serves as a protective member support surface that supports the peripheral region of the dielectric protective film FC4 from below.

[0465] Therefore, by supporting the peripheral region of the dielectric protective film FC4 from below by the support surface 10YF, the position of the dielectric protective film FC4 in the height direction along the Z direction can be fixed.

[0466] In the second embodiment shown in FIG. 61, the peripheral area of ​​the conductor-film-attached dielectric protective film FCE, which is a combined structure of the conductor film F73 and the dielectric protective film FC4, is supported from below by the support surface 10YF.

[0467] In the dielectric film support member 10C, the support surface 10F, which is the dielectric support surface, is formed at a higher height position than the support surface 10YF, which is the protective member support surface, and the height difference value Δd between the support surfaces 10F and 10YF is set so that a protective member space 40 with a gap length Δ40 is formed between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0468] For example, if the dielectric protective film FC4 has a uniform film thickness dC4, the conductor films F72 and F73 both have a uniform film thickness d7, and the length of the recess bottom surface 26 in the depth direction from the convex bottom surface 23 in the -Z direction is taken as the protrusion length t26, then the difference value Δd is set to a length that satisfies {Δd = dC4 + d7 + t26 + Δ40}. In this case, the gap length Δ40 of the protective member space 40 needs to be set sufficiently shorter than the gap length Δ4 of the discharge space 4 so as to satisfy the above-mentioned discharge generation requirements. Note that, because the film thickness d7 of the conductor films F72 and F73 is sufficiently thin, the gap length between the dielectric protective film FC4 that forms part of the protective member space 40 and the high-voltage-side dielectric film 2 is also approximately the same as the gap length Δ40.

[0469] 59 and 60 can be obtained by, for example, the following third manufacturing method, which includes steps S31 to S34 shown below.

[0470] S31: A conductor film F72 is formed on the lower surface of the high voltage side dielectric film 2 to obtain a conductor-coated dielectric film F2E as shown in FIG.

[0471] S32: The dielectric protective film FC2 is disposed on the support surface 10YF of the dielectric film support member 10C. The conductor film F7 is not formed on the lower surface of the conductor-film-attached dielectric film F2E disposed on the support surface 10F.

[0472] S33: The conductor film-equipped dielectric film F2E is placed on the support surface 10F of the dielectric film support member 10C. The conductor film F72 is not formed on the lower surface of the conductor film-equipped dielectric film F2E placed on the support surface 10F.

[0473] S34: A dielectric film suppressing member 11 is provided to suppress the conductor film-attached dielectric film F2E from above.

[0474] After step S34 is performed, a protective member space 40 is formed between the upper surface of the dielectric protective film FC4 and the lower surface of the conductive film F72 and the lower surface of the high-voltage side dielectric film 2 (on which the conductive film F72 is not provided).

[0475] In this way, the first aspect of the electrode unit 931 having the high voltage side electrode component E14 can be obtained by the third manufacturing method including steps S31 to S34.

[0476] The second aspect of the electrode unit 931 shown in Figures 59 and 61 can be obtained, for example, by the following fourth manufacturing method. The fourth manufacturing method is a manufacturing method including the following steps S41 to S44.

[0477] S41: A conductor film F73 is formed on the top surface of the dielectric protective film FC2 to obtain a conductor-coated dielectric protective film FCE as shown in FIG.

[0478] S42: The conductor-film-attached dielectric protective film FCE is placed on the support surface 10YF of the dielectric film support member 10C. In the conductor-film-attached dielectric protective film FCE, the conductor film F7 is not formed above the support surface 10YF.

[0479] S43: The high voltage side dielectric film 2 is placed on the support surface 10F of the dielectric film support member 10C.

[0480] S44: A dielectric film suppressing member 11 is provided to suppress the high voltage side dielectric film 2 from above.

[0481] After step S44 is performed, a protective member space 40 is formed between the upper surface of the conductor film F73 of the conductor film-equipped dielectric protective film FCE and the upper surface of the dielectric protective film FC2 (on which the conductor film F73 is not provided) and the high-voltage side dielectric film 2.

[0482] The active gas generation device having the electrode unit 931 which is the actual structure of the eighth embodiment has the same effects as the active gas generation device of the fifth embodiment shown in Figures 47 to 51, and further has the unique effects described below.

[0483] The activated gas generator of the eighth embodiment has a conductor film F72 or F73, which is an electrode reinforcing conductive film, provided between a dielectric protective film FC4, which is a dielectric protective member, and a high-voltage-side dielectric film 2 (dielectric film F2), which is a first electrode dielectric film. The conductor film F72 or F73 has a shape characteristic that it is wider than the power feeder 5 (high-voltage electrode F5), which is a first electrode conductive film, in a plan view.

[0484] Therefore, in the activated gas generating device of the eighth embodiment, the formation area of ​​the conductive film F72 or the conductive film F73 is enlarged from the power supply body 5, and accordingly, a discharge space 4e including an expanded main discharge space with a larger volume can be obtained.

[0485] Therefore, in the activated gas generating device of embodiment 8, the formation area of ​​the power supply body 5 can be kept to a necessary minimum, and a dielectric barrier discharge can be generated in the relatively large discharge space 4e including the extended main discharge space.

[0486] In the first aspect of the active gas generating apparatus of embodiment 8, the dielectric protective film FC4, which is the dielectric protective member, has a protective member space 40 between it and the conductive film F72, which is the electrode reinforcing conductive film, so that there is no need to tightly contact the dielectric protective film FC4 with the conductive film F72 or the high-voltage side dielectric film 2, thereby simplifying the apparatus configuration.

[0487] On the other hand, in the second aspect of the active gas generating apparatus of embodiment 8, a protective member space 40 is provided between the conductive film F73 and the high-pressure side dielectric film 2, so that the dielectric protective film FC4 and the high-pressure side dielectric film 2 do not need to be tightly attached to each other, thereby simplifying the apparatus configuration.

[0488] Furthermore, in the active gas generating apparatus of embodiment 8, by setting the gap length Δ40 of the protective member space 40 to a length that is sufficiently shorter than the gap length Δ4 of the discharge space 4e, it is possible to set the applied voltage, the discharge space 4, and the protective member space 40 so as to satisfy the above-mentioned discharge generation requirements relatively easily.

[0489] As a result, the active gas generating device of embodiment 8 can accurately obtain active gas G2 between dielectric film 2 (F2) and dielectric film 3 (F3) without creating any space other than discharge space 4e where a discharge phenomenon occurs.

[0490] The high-voltage side electrode configuration portion E14 in the first aspect of the electrode unit 931 includes a dielectric protective film FC4, and in the electrode unit 931, the applied voltage applied between the dielectric films F2 and F3 satisfies the above-mentioned discharge generation requirements.

[0491] Therefore, the first aspect of the active gas generator of embodiment 8 having the electrode unit 931 can generate a dielectric barrier discharge in a relatively wide discharge space 4e including an extended main discharge space between the dielectric protective film FC4 and the dielectric film 3 (F3) without generating a dielectric barrier discharge in the protective member space 40 formed between the dielectric protective film FC4 and the conductor film F72.

[0492] On the other hand, the high-voltage side electrode configuration portion E15 in the second aspect of the electrode unit 931 includes a dielectric protective film FC4, and in the electrode unit 931, the applied voltage applied between the dielectric films F2 and F3 satisfies the above-mentioned discharge generation requirements.

[0493] Therefore, the second aspect of the active gas generator of embodiment 8 can generate a dielectric barrier discharge in a relatively wide discharge space 4e including an extended main discharge space between the dielectric protective film FC4 and the dielectric film 3 (F3) without generating a dielectric barrier discharge in the protective member space 40 formed between the high-voltage side dielectric film 2 and the conductor film F73.

[0494] As a result, the activated gas generating device of the eighth embodiment can activate the source gas G1 supplied to the relatively wide discharge space 4e to generate the activated gas G2.

[0495] Furthermore, in the electrode unit 931 of the active gas generating apparatus of embodiment 8, the dielectric film support member 10C supports the peripheral area of ​​the high-voltage side dielectric film 2 from below with the support surface 10F, which is the dielectric support surface, and also supports the peripheral area of ​​the dielectric protective film FC4 from below with the support surface 10YF, which is the protective member support surface.

[0496] In addition, in the electrode unit 931, the difference value Δd between the support surface 10F and the support surface 10YF is set so that a protective member space 40 with a gap length Δ40 is formed in a portion between the lower surface of the high-voltage side dielectric film 2 and the upper surface of the dielectric protective film FC4.

[0497] Therefore, the active gas generating apparatus of embodiment 8 can stably fix the dielectric protective film FC4 or the dielectric protective film FCE with a conductive film (a combined structure of the conductive film F73 and the dielectric protective film FC4) having a protective member space 40 between it and the high-pressure side dielectric film 2.

[0498] Furthermore, the multiple gas jets 70 in the activated gas generator of embodiment 8 having the electrode unit 931 shown in Figures 59 to 61 have the same features as the electrode unit 55 of embodiment 2 or the electrode unit 831 of embodiment 5. That is, the multiple gas jets 70 are provided in such a manner that they approach each other downward so that the multiple partially activated gases collide in a collision region 80, and the collision region 80 is located within the downward tapered region 41t (see Figures 36 and 37) or above the downward tapered region 41t.

[0499] As a result, the activated gas generating apparatus of the eighth embodiment can supply a uniform activated gas G2 to the downstream processing space, similar to the electrode unit 55 of the second embodiment and the electrode unit 831 of the fifth embodiment.

[0500] <Others> Although the present disclosure has been described in detail, the above description is merely illustrative in all respects and does not limit the present disclosure. It is understood that countless variations not illustrated can be envisioned without departing from the scope of the present disclosure.

[0501] For example, in the second embodiment, a plurality of partially activated gases are caused to collide in one collision region 80, but a plurality of partially activated gases may be selectively caused to collide in two or more collision regions.

[0502] Furthermore, with regard to the third to sixth embodiments, the following active gas generating devices having the first and second improved electrode units are conceivable.

[0503] The first improved electrode unit is a combination structure of the electrode unit 81 and the electrode unit 84, and has a structure including the dielectric protective film FC2 of the third embodiment and the dielectric protective film FC5 of the sixth embodiment.

[0504] The second improved electrode unit is a combination structure of electrode unit 82 and electrode unit 83, and has a structure including the dielectric protective film FC3 of the fourth embodiment and the dielectric protective film FC4 of the fifth embodiment.

[0505] In this way, within the scope of the present disclosure, it is possible to freely combine the embodiments, and to modify or omit the embodiments as appropriate.

[0506] DESCRIPTION OF SYMBOLS 1 Housing 2 High-voltage side dielectric film 3 Ground side dielectric film 4, 4e Discharge space 5 Power supply 6, 60 Ground conductor 7 Conductive film 8 Cover dielectric film 9 Shield dielectric film 10, 10B, 10C, M10 Dielectric film support member 11 Dielectric film suppressing member 12 Pressing member 13 Buffer conductor 15 AC power supply 21 Gas flow path 22 Cooling path 40 Protective member space 41 Housing opening 41a Upper region 41t Lower tapered region 50, 51 to 53, 55, 81 to 84, 91, 810, 811, 830, 831, 911, 931 Electrode unit 61 Source gas buffer space 62 Slit space 63 Side space 68 Active gas buffer space 69, 70 Gas outlet 71, 75 Active gas generator 80 Collision area E1, E10 to E15 High-voltage side electrode configuration part E2, E20 to E22 Ground side electrode configuration part F2, F3 Dielectric film F5, F6 High-voltage electrode F7, F71 to F73 Conductor film FC2 to FC5 Dielectric protection film

Claims

1. An activated gas generating device having an electrode unit which generates an activated gas by activating a raw material gas supplied to a discharge space, the electrode unit comprising: a first electrode configuration portion; and a second electrode configuration portion provided below the first electrode configuration portion, the first electrode configuration portion comprising a first electrode dielectric film and a first electrode conductive film provided on an upper surface of the first electrode dielectric film, the second electrode configuration portion comprising a second electrode dielectric film and a second electrode conductive film provided on a lower surface of the second electrode dielectric film, a dielectric space is provided between the first electrode dielectric film and the second electrode dielectric film, the discharge space includes a main discharge space which is a region within the dielectric space where the first and second electrode conductive films overlap in a plan view, the electrode unit further comprising: a dielectric protection member provided on the dielectric space side of a dielectric film to be protected which is at least one of the first electrode dielectric film and the second electrode dielectric film, an active gas generator, characterized in that a constituent material of the dielectric protective member has a protective property of blocking irradiation of the dielectric film to be protected by ions generated by the dielectric barrier discharge when a dielectric barrier discharge occurs in the discharge space, and not chemically reacting with the ions.

2. An active gas generating apparatus according to claim 1, wherein the dielectric protection member is provided in close contact with the dielectric film to be protected with no gaps.

3. An active gas generating apparatus as described in claim 2, wherein the dielectric protection member is provided in close contact with the lower surface of the first electrode dielectric film, the space where the dielectric protection member and the second electrode dielectric film face each other is the dielectric space, the dielectric film to be protected is the first electrode dielectric film, the first electrode configuration part further includes the dielectric protection member, the active gas generating apparatus further includes a power source which applies an applied voltage between the first electrode conductive film of the first electrode configuration part and the second electrode conductive film of the second electrode configuration part, and the dielectric barrier discharge occurs in the discharge space when the applied voltage is applied.

4. An active gas generating apparatus according to claim 1, further comprising an electrode reinforcing conductive film provided on a lower surface of the first electrode dielectric film, the dielectric protection member covers the entirety of the electrode reinforcing conductive film and is provided on the lower surface of the first electrode dielectric film, the first electrode dielectric film, the electrode reinforcing conductive film and the dielectric protection member are laminated in this order with no gaps between them, the space where the dielectric protection member and the second electrode dielectric film face each other constitutes the dielectric space, the dielectric film to be protected is the first electrode dielectric film, the first electrode configuration part further includes the dielectric protection member and the electrode reinforcing conductive film, the active gas generating apparatus further comprises a power source which applies an applied voltage between the first electrode conductive film of the first electrode configuration part and the second electrode conductive film of the second electrode configuration part, and the dielectric barrier discharge is generated in the discharge space when the applied voltage is applied, an active gas generating device, wherein the electrode reinforcing conductive membrane has a planar shape that is wider than the first electrode conductive membrane and narrower than the first electrode dielectric membrane in a planar view, the second electrode conductive membrane includes the electrode reinforcing conductive membrane in a planar view, and the discharge space includes an extended main discharge space in which the electrode reinforcing conductive membrane and the second electrode conductive membrane overlap in a planar view within the dielectric space.

5. An active gas generating apparatus according to claim 3, wherein the lower surface of the first electrode dielectric film has a recessed bottom surface and a convex bottom surface provided around the recessed bottom surface, the convex bottom surface is formed at a higher position in the height direction than the recessed bottom surface, the dielectric protective member is provided on the recessed bottom surface, and the dielectric protective member is not provided on the convex bottom surface, the electrode unit further comprises a dielectric film supporting member having a dielectric supporting surface that supports the convex bottom surface of the first electrode dielectric film from below, and a dielectric film suppressing member that suppresses the first electrode dielectric film from above, the dielectric film suppressing member does not overlap with the first electrode conductive film in a plan view, and the dielectric film supporting member further has a protective member fixing auxiliary surface arranged below the dielectric protective member provided on the recessed bottom surface, and the electrode unit comprises an elastic member inserted between the protective member fixing auxiliary surface and a lower surface of the dielectric protective member, and an elastic force of the elastic member causes a bottom surface of the recess in the first electrode dielectric film and an upper surface of the dielectric protective member to be in close contact with each other.

6. An active gas generator according to claim 4, wherein the lower surface of the first electrode dielectric film has a recessed bottom surface and a convex bottom surface provided around the recessed bottom surface, the convex bottom surface is formed at a position higher in the height direction than the recessed bottom surface, the electrode reinforcing conductive film and the dielectric protective member are provided on the recessed bottom surface, and the electrode reinforcing conductive film and the dielectric protective member are not provided on the convex bottom surface, the electrode unit further comprises a dielectric film support member having a dielectric support surface that supports the convex bottom surface of the first electrode dielectric film from below, and a dielectric film suppressing member that suppresses the first electrode dielectric film from above, the dielectric film suppressing member does not overlap with the first electrode conductive film in a plan view, the dielectric film support member further has a protective member fixing auxiliary surface located below the dielectric protective member provided on the recessed bottom surface, and the electrode reinforcing conductive film is not formed in an area that overlaps with the protective member fixing auxiliary surface in a plan view, and the electrode unit comprises an elastic member inserted between the protective member fixing auxiliary surface and a lower surface of the dielectric protective member, and an elastic force of the elastic member causes a bottom surface of the recess in the first electrode dielectric film and an upper surface of the dielectric protective member to be in close contact with each other.

7. An active gas generating apparatus as described in claim 5 or claim 6, wherein the bottom surface of the recess is formed in a circular shape when viewed in a plane, the bottom surface of the convex portion is formed in a circular shape around the bottom surface of the recess when viewed in a plane, the protective member fixing auxiliary surface of the dielectric film support member is formed in a circular shape when viewed in a plane, the dielectric film support member includes a groove portion provided in the protective member fixing auxiliary surface in a circular shape when viewed in a plane, and an O-ring provided in the groove and having a circular shape when viewed in a plane, and the elastic member is an O-ring.

8. An active gas generating apparatus as described in claim 2, wherein the dielectric protection member is provided in close contact with an upper surface of the second electrode dielectric film, the space between the first electrode dielectric film and the dielectric protection member becomes the dielectric space, the dielectric film to be protected is the second electrode dielectric film, the second electrode configuration part further includes the dielectric protection member, and the active gas generating apparatus further includes a power source that applies an applied voltage between the first electrode conductive film of the first electrode configuration part and the second electrode conductive film of the second electrode configuration part.

9. An active gas generating apparatus as described in claim 1, further comprising a power source for applying an applied voltage between the first electrode conductive film of the first electrode configuration portion and the second electrode conductive film of the second electrode configuration portion, the dielectric protective member being provided with a protective member space between it and the dielectric film to be protected, and the applied voltage, the discharge space and the protective member space being set so as to satisfy discharge generation requirements such that, when the applied voltage is applied, the dielectric barrier discharge occurs in the discharge space and the dielectric barrier discharge does not occur in the protective member space.

10. An active gas generating apparatus as described in claim 9, wherein the dielectric protective member has a protective member space between itself and the underside of the first electrode dielectric film, the space between the dielectric protective member and the second electrode dielectric film being opposed to each other becomes the dielectric space, the dielectric film to be protected is the first electrode dielectric film, and the first electrode component further includes the dielectric protective member.

11. An active gas generating apparatus according to claim 1, further comprising an electrode reinforcing conductive film provided in close contact with a lower surface of the first electrode dielectric film, the dielectric protective member being provided below the electrode reinforcing conductive film, the dielectric protective member including the entire electrode reinforcing conductive film in a plan view, a protective member space being provided between the dielectric protective member and the electrode reinforcing conductive film, the space in which the dielectric protective member and the second electrode dielectric film face each other being the dielectric space, the dielectric film to be protected being the first electrode dielectric film, the first electrode configuration part further including the dielectric protective member and the electrode reinforcing conductive film, the active gas generating apparatus further comprising a power source for applying an applied voltage between the first electrode conductive film of the first electrode configuration part and the second electrode conductive film of the second electrode configuration part, the dielectric barrier discharge being generated in the discharge space when the applied voltage is applied, an active gas generator, wherein the electrode reinforcing conductive membrane has a planar shape that is wider than the first electrode conductive membrane and narrower than the first electrode dielectric membrane in a planar view, the second electrode conductive membrane includes the electrode reinforcing conductive membrane in a planar view, the discharge space includes an extended main discharge space which is a region in the dielectric space where the electrode reinforcing conductive membrane and the second electrode conductive membrane overlap in a planar view, and the applied voltage, the discharge space and the protective member space are set to satisfy discharge generation requirements such that, when the applied voltage is applied, the dielectric barrier discharge is generated in the discharge space and the dielectric barrier discharge is not generated in the protective member space.

12. An active gas generating apparatus according to claim 1, further comprising an electrode reinforcing conductive film provided in close contact with an upper surface of the dielectric protective member, the dielectric protective member including the entire electrode reinforcing conductive film in a planar view, a protective member space being provided between the electrode reinforcing conductive film and the first electrode dielectric film, the space where the dielectric protective member and the second electrode dielectric film face each other being the dielectric space, the dielectric film to be protected being the first electrode dielectric film, the first electrode configuration part further including the dielectric protective member and the electrode reinforcing conductive film, the active gas generating apparatus further comprising a power source for applying an applied voltage between the first electrode conductive film of the first electrode configuration part and the second electrode conductive film of the second electrode configuration part, the dielectric barrier discharge occurring in the discharge space when the applied voltage is applied, the electrode reinforcing conductive film having a planar shape wider than the first electrode conductive film in a planar view and narrower than the first electrode dielectric film in a planar view, the second electrode conductive film including the electrode reinforcing conductive film in a planar view, the discharge space includes an extended main discharge space which is a region in the dielectric space where the electrode reinforcing conductive film and the second electrode conductive film overlap in a planar view, and the applied voltage, the discharge space and the protective member space are set so as to satisfy a discharge generation requirement whereby the dielectric barrier discharge is generated in the discharge space and the dielectric barrier discharge is not generated in the protective member space when the applied voltage is applied.

13. An active gas generating apparatus as claimed in claim 10, wherein the lower surface of the first electrode dielectric film has a recessed bottom surface and a convex bottom surface provided around the recessed bottom surface, the convex bottom surface is formed at a higher position in the height direction than the recessed bottom surface, the recessed bottom surface overlaps with the dielectric protective member in a planar view, and the convex bottom surface does not overlap with the dielectric protective member in a planar view, the electrode unit further comprises a dielectric film supporting member having a dielectric supporting surface that supports the convex bottom surface of the first electrode dielectric film from below, and a dielectric film suppressing member that suppresses the first electrode dielectric film from above, the dielectric film suppressing member does not overlap with the first electrode conductive film in a planar view, and the dielectric film supporting member further has a protective member supporting surface that supports the dielectric protective member from below, an active gas generating apparatus, wherein the dielectric support surface is formed at a higher position in the height direction than the protective member support surface, and a difference in height between the dielectric support surface and the protective member support surface is set so that the protective member space is formed between a lower surface of the first electrode dielectric film and an upper surface of the dielectric protective member.

14. An active gas generating apparatus as set forth in claim 11 or 12, wherein the lower surface of the first electrode dielectric film has a recessed bottom surface and a convex bottom surface provided around the recessed bottom surface, the convex bottom surface is formed at a higher position in the height direction than the recessed bottom surface, the recessed bottom surface overlaps with the dielectric protection member and the electrode reinforcing conductive film in a planar view, and the convex bottom surface does not overlap with the dielectric protection member and the electrode reinforcing conductive film in a planar view, the electrode unit further comprises a dielectric film supporting member having a dielectric support surface that supports the convex bottom surface of the first electrode dielectric film from below, and a dielectric film suppressing member that suppresses the first electrode dielectric film from above, the dielectric film suppressing member does not overlap with the first electrode conductive film in a planar view, and the dielectric film supporting member further has a protective member supporting surface that supports the dielectric protection member from below, an active gas generating apparatus, wherein the dielectric support surface is formed at a higher position in the height direction than the protective member support surface, and a difference in height between the dielectric support surface and the protective member support surface is set so that the protective member space is formed in a portion between a lower surface of the first electrode dielectric film and an upper surface of the dielectric protective member.

15. An active gas generating apparatus as described in claim 9, wherein the dielectric protective member has a protective member space between itself and an upper surface of the dielectric film for the second electrode, the space between the dielectric film for the first electrode and the dielectric protective member is the dielectric space, the dielectric film to be protected is the dielectric film for the second electrode, and the second electrode component further includes the dielectric protective member.

16. An active gas generator according to any one of claims 3 to 7 and claims 10 to 14, further comprising a conductive housing that accommodates the electrode unit in an internal space of the housing, the housing having a housing bottom including a flat surface and a conductor accommodating space recessed in a depth direction from the flat surface, the electrode unit further comprising a reference potential conductor provided below the second electrode configuration and accommodated in the conductor accommodating space, the reference potential conductor having an active gas buffer space at an upper portion, the second electrode configuration being disposed so as to close the active gas buffer space, the second electrode dielectric film having a dielectric through-hole penetrating the second electrode dielectric film in a region overlapping with the active gas buffer space in a plan view, the second electrode conductive film having a conductive film opening in a region overlapping with the active gas buffer space in a plan view, the conductive film opening overlapping with the dielectric through-hole in a plan view, and the active gas generator, an active gas generator including: a plurality of gas outlets each provided from a bottom surface of the active gas buffer space through the reference potential conductor, the plurality of gas outlets not overlapping with the dielectric through hole in a plan view; the discharge space including, in addition to the main discharge space, an auxiliary discharge space including the dielectric through hole and a part of the active gas buffer space; the active gas output from the plurality of gas outlets being defined as a plurality of partially active gases; the bottom of the housing has a housing opening in a region overlapping with the active gas buffer space in a plan view, the plurality of partially active gases being guided downward through the housing opening; the housing opening including a tapered region having a tapered shape whose opening area becomes wider as it extends downward; the plurality of gas outlets being provided in such a manner that they approach each other as they extend downward so that the plurality of partially active gases collide with each other in a collision region, and the collision region being present within the tapered region or above the tapered region.

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