Semiconductor device and vehicle

Abstract

This semiconductor device comprises a first terminal, a second terminal, a first semiconductor element, and a first heat dissipation member. The second terminal is positioned on one side of the first terminal in a first direction. The first semiconductor element is positioned on the opposite side of the second terminal with respect to the first terminal. The first semiconductor element is electrically connected to the first terminal. The first heat dissipation member is connected to the first terminal. A first flow path is provided between the first terminal and the second terminal in the first direction. The first heat dissipation member is accommodated in the first flow path.

Description

Semiconductor device and vehicle

[0001] The present disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device.

[0002] Patent Document 1 discloses an example of a semiconductor module including a semiconductor device and a cooler. The cooler includes a housing having a hollow region and a heat sink. The housing has an opening that leads to the hollow region. The heat sink is attached to the housing so as to cover the opening. A portion of the heat sink is housed in the hollow region. The semiconductor device is joined to a portion of the heat sink that protrudes from the hollow region. When a coolant (such as cooling water) is flowed through the hollow region, the coolant comes into contact with the heat sink. This allows the semiconductor device to be efficiently cooled via the heat sink.

[0003] However, in the configuration of the semiconductor module disclosed in Patent Document 1, the cooling effect of the semiconductor device is not sufficient relative to the scale of the cooler.

[0004] International Publication No. 2017 / 094370

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can further improve cooling efficiency.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a first terminal, a second terminal located on one side of the first terminal in a first direction, a first semiconductor element located on the opposite side of the first terminal from the second terminal and conducting to the first terminal, and a first heat dissipation member connected to the first terminal. A first flow path is provided between the first terminal and the second terminal in the first direction. The first heat dissipation member is housed in the first flow path.

[0007] A vehicle provided by a second aspect of the present disclosure includes a drive source and a semiconductor device. The semiconductor device is electrically connected to the drive source. The semiconductor device further includes a third terminal, as compared to the semiconductor device provided by the first aspect of the present disclosure. The first and second terminals of the semiconductor device are in contact with a first flow path provided between them in a first direction. A first semiconductor element of the semiconductor device is electrically connected to the third terminal. A second flow path is provided between the first terminal and the third terminal in the first direction. The first semiconductor element is housed in the second flow path.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1 , showing the housing through the plan view. FIG. 3 is a plan view corresponding to FIG. 2 , omitting the illustration of a fourth terminal and a plurality of fourth heat dissipation members. FIG. 4 is a plan view corresponding to FIG. 3 , omitting the illustration of a second terminal, a conductive member, a third signal terminal, a fourth signal terminal, a plurality of second semiconductor elements, a plurality of second spacers, a plurality of third leads, and a plurality of fourth leads. FIG. 5 is a plan view corresponding to FIG. 4 , omitting the illustration of a first terminal and a plurality of first heat dissipation members. FIG. 6 is a bottom view of the semiconductor device shown in FIG. 1 . FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3 . FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3 . FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3 . FIG. 10 is a partially enlarged view of FIG. 8 , showing one of a plurality of first semiconductor elements and its vicinity. FIG. 11 is a partial enlarged view of FIG. 8 , showing one of the multiple second semiconductor elements and its vicinity. FIG. 12 is a cross-sectional view showing a state in which a refrigerant flows downward in the semiconductor device shown in FIG. 1 . FIG. 13 is a partial enlarged cross-sectional view of a semiconductor device according to a first modified example of the first embodiment of the present disclosure. FIG. 14 is a partial enlarged cross-sectional view of a semiconductor device according to a second modified example of the first embodiment of the present disclosure. FIG. 15 is a partial enlarged cross-sectional view of a semiconductor device according to a third modified example of the first embodiment of the present disclosure. FIG. 16 is a schematic diagram of a vehicle equipped with the semiconductor device shown in FIG. 1 . FIG. 17 is a cross-sectional view of a semiconductor device according to a second embodiment of the present disclosure and corresponds to FIG. 7 . FIG. 18 is a cross-sectional view of the semiconductor device shown in FIG. 17 and corresponds to FIG. 8 . FIG. 19 is a plan view of a semiconductor device according to a third embodiment of the present disclosure and corresponds to FIG. 3 . FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 19 . FIG. 21 is a cross-sectional view taken along line XXI-XX in FIG. 19 . FIG. 22 is a partial enlarged view of FIG. 21 . Fig. 23 is a partially enlarged cross-sectional view of a semiconductor device according to a modified example of the third embodiment of the present disclosure. Fig. 24 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present disclosure, and corresponds to Fig. 7. Fig. 25 is a plan view of the semiconductor device shown in Fig. 24, and corresponds to Fig. 8. Fig. 26 is a plan view of a semiconductor device according to a fifth embodiment of the present disclosure, and corresponds to Fig. 3. Fig. 27 is a plan view of the semiconductor device shown in Fig. 26, and corresponds to Fig. 5.FIG. 28 is a cross-sectional view taken along line XXVIII-XXVIII in FIG. 26. FIG. 29 is a cross-sectional view of a semiconductor device according to a sixth embodiment of the present disclosure, corresponding to FIG. 7. FIG. 30 is a plan view of the semiconductor device shown in FIG. 29, corresponding to FIG. 8. FIG. 31 is a partially enlarged view of FIG. 30. FIG. 32 is a partially enlarged cross-sectional view of a semiconductor device according to a modified example of the sixth embodiment of the present disclosure. FIG. 33 is a plan view of a semiconductor device according to a seventh embodiment of the present disclosure, corresponding to FIG. 4. FIG. 34 is a cross-sectional view taken along line XXXIV-XXXIV in FIG. 33. FIG. 35 is a cross-sectional view taken along line XXXV-XXXV in FIG. 33. FIG. 36 is a plan view of a semiconductor device according to an eighth embodiment of the present disclosure. FIG. 37 is a bottom view of the semiconductor device shown in FIG. 36. FIG. 38 is a cross-sectional view taken along line XXXVIII-XXXVIII in FIG. 36. FIG. 39 is a cross-sectional view taken along line XXXIX-XXXIX in FIG. 36 . FIG. 40 is a plan view of a semiconductor device according to a ninth embodiment of the present disclosure, corresponding to FIG. 3 . FIG. 41 is a plan view of the semiconductor device shown in FIG. 40 , corresponding to FIG. 5 . FIG. 42 is a cross-sectional view taken along line XLII-XLII in FIG. 40 . FIG. 43 is a cross-sectional view taken along line XLIII-XLIII in FIG. 40 . FIG. 44 is a partial enlarged view of FIG. 42 , showing one of the multiple first semiconductor elements and its vicinity. FIG. 45 is a partial enlarged view of FIG. 42 , showing one of the multiple second semiconductor elements and its vicinity. FIG. 46 is a plan view of a semiconductor device according to a tenth embodiment of the present disclosure. FIG. 47 is a plan view of the semiconductor device shown in FIG. 46 , corresponding to FIG. 2 . FIG. 48 is a plan view of the semiconductor device shown in FIG. 46 , corresponding to FIG. 3 . FIG. 49 is a plan view of the semiconductor device shown in FIG. 46 , corresponding to FIG. 5 . Fig. 50 is a cross-sectional view taken along line LL in Fig. 47. Fig. 51 is a cross-sectional view taken along line LI-LI in Fig. 47.

[0010] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 12. The semiconductor device A10 is typically used in power conversion circuits such as inverters. The semiconductor device A10 includes a first terminal 11, a second terminal 12, a third terminal 13, a fourth terminal 14, a conductive member 15, a plurality of first semiconductor elements 21, a plurality of second semiconductor elements 22, a plurality of first heat dissipation members 31, a plurality of third heat dissipation members 33, a plurality of fourth heat dissipation members 34, a plurality of spacers 40, and a housing 50. Here, the plurality of spacers 40 include a plurality of first spacers 40A and a plurality of second spacers 40B. The semiconductor device A10 further includes a first signal terminal 16, a second signal terminal 17, a third signal terminal 18, a fourth signal terminal 19, a plurality of first leads 61, a plurality of second leads 62, a plurality of third leads 63, and a plurality of fourth leads 64. For ease of understanding, FIGS. 2 to 5 show the housing 50 in a see-through manner. 2 to 5, the transparent housing 50 is shown by an imaginary line (two-dot chain line). For ease of understanding, in FIG. 3, the fourth terminal 14 and the plurality of fourth heat dissipation members 34 are omitted from illustration compared to FIG. 2. For ease of understanding, in FIG. 4, the second terminal 12, the conductive member 15, the third signal terminal 18, the fourth signal terminal 19, the plurality of second semiconductor elements 22, the plurality of second spacers 40B, the plurality of third leads 63, and the plurality of fourth leads 64 are omitted from illustration compared to FIG. 3. For ease of understanding, in FIG. 5, the first terminal 11 and the plurality of first heat dissipation members 31 are omitted from illustration compared to FIG. 4.

[0012] In the description of the semiconductor device A10, for convenience, the normal direction to a first mounting surface 131A of a third terminal 13 (described later) is referred to as the "first direction z." The direction perpendicular to the first direction z is referred to as the "second direction x." The direction perpendicular to each of the first direction z and the second direction x is referred to as the "third direction y."

[0013] The semiconductor device A10 includes a half-bridge circuit including a plurality of first semiconductor elements 21 and a plurality of second semiconductor elements 22. The semiconductor device A10 converts DC power supplied to a third terminal 13 and a fourth terminal 14 into AC power using the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22. The third terminal 13 is a P terminal (positive electrode). The fourth terminal 14 is an N terminal (negative electrode). The converted AC power is input from the first terminal 11 and the second terminal 12 to a power supply target such as a motor.

[0014] 7 to 9 , the housing 50 supports each of the first terminal 11, the second terminal 12, the third terminal 13, the fourth terminal 14, the first signal terminal 16, the second signal terminal 17, the third signal terminal 18, and the fourth signal terminal 19. The housing 50 is made of an insulator containing resin. Alternatively, the housing 50 may be made of a conductor containing a metal such as aluminum (Al).

[0015] 1 and 6 , the housing 50 has a top surface 51, a bottom surface 52, a first side surface 531, a second side surface 532, a third side surface 533, and a fourth side surface 534. The top surface 51 faces one side in the first direction z. The bottom surface 52 faces the opposite side from the top surface 51 in the first direction z. The first side surface 531 and the second side surface 532 face opposite sides to each other in the second direction x. The third side surface 533 and the fourth side surface 534 face opposite sides to each other in the third direction y.

[0016] As shown in FIGS. 7 to 9 , the housing 50 has a hollow portion 54. Atmospheric air flows into the hollow portion 54. Alternatively, as shown in FIG. 12 , the hollow portion 54 may be constantly filled with the refrigerant 70. The hollow portion 54 includes a first flow path 541, a second flow path 542, and a third flow path 543. The first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The second flow path 542 is provided between the first terminal 11 and the third terminal 13 in the first direction z. The third flow path 543 is provided between the second terminal 12 and the fourth terminal 14 in the first direction z. Here, the refrigerant 70 shown in FIG. 12 must be an insulator. In the present disclosure, the composition of the refrigerant 70 is not limited as long as the refrigerant 70 is an insulator.

[0017] As shown in Figures 1, 3, 4, and 6, the housing 50 is provided with an inlet 55 and an outlet 56. The inlet 55 opens at the third side surface 533 and communicates with the hollow portion 54. The outlet 56 opens at the fourth side surface 534 and communicates with the hollow portion 54. In the housing 50, a refrigerant 70 shown in Figure 12 flows from the inlet 55 into the hollow portion 54. The refrigerant 70 that has flowed into the hollow portion 54 is discharged from the outlet 56. As shown in Figures 3 and 4, the inlet 55 and the outlet 56 are located on opposite sides of each other in the second direction x with respect to the plurality of first heat dissipation members 31.

[0018] As shown in FIGS. 7 to 9 , the first terminals 11 are located on one side of the multiple first semiconductor elements 21 in the first direction z. The first terminals 11 are metal plates containing, for example, copper (Cu). The first terminals 11 have a first base portion 111 and a first extension portion 112. The first base portion 111 is housed in the hollow portion 54 of the housing 50 and is in contact with the first flow path 541 and the second flow path 542. The first base portion 111 is strip-shaped and extends in the second direction x. The first extension portion 112 is conductively joined to one side of the first base portion 111 in the second direction x. The first extension portion 112 is supported by the housing 50. A portion of the first extension portion 112 protrudes outward from the second side surface 532 of the housing 50.

[0019] As shown in FIGS. 7 to 9 , the second terminal 12 is located on the opposite side of the first terminal 11 from the plurality of first semiconductor elements 21 in the first direction z. The second terminal 12 is a metal plate containing, for example, copper. The second terminal 12 has a second base 121 and a second extension 122. The second base 121 is housed in the hollow portion 54 of the housing 50 and is in contact with the first flow path 541 and the third flow path 543. The second base 121 is strip-shaped and extends in the second direction x. The second base 121 has a second mounting surface 121A that faces the same side as the top surface 51 of the housing 50 in the first direction z. The second extension 122 is conductively bonded to one side of the second base 121 in the second direction x. The second extension 122 is supported by the housing 50. A portion of the second extension 122 protrudes outward from the second side surface 532 of the housing 50.

[0020] As shown in FIGS. 7 to 9 , the third terminal 13 is located on the opposite side of the first terminal 11 from the first terminals 11 in the first direction z, with the plurality of first semiconductor elements 21 as a reference. The third terminal 13 is a metal plate containing, for example, copper. The third terminal 13 has a third base 131 and a third extension 132. The third base 131 is housed in the hollow portion 54 of the housing 50 and is in contact with the second flow path 542. The third base 131 is strip-shaped and extends in the second direction x. The third base 131 has a first mounting surface 131A that faces the same side as the top surface 51 of the housing 50 in the first direction z. The third extension 132 is conductively bonded to one side of the third base 131 in the second direction x. The third extension 132 is supported by the housing 50. A portion of the third extension 132 protrudes outward from a first side surface 531 of the housing 50.

[0021] As shown in FIGS. 7 to 9 , the fourth terminal 14 is located on the opposite side of the second terminal 12 in the first direction z with respect to the plurality of second semiconductor elements 22. The fourth terminal 14 is a metal plate containing, for example, copper. The fourth terminal 14 has a fourth base 141 and a fourth extension 142. The fourth base 141 is housed in the hollow portion 54 of the housing 50 and is in contact with the third flow path 543. The fourth base 141 is strip-shaped and extends in the second direction x. The fourth extension 142 is conductively joined to one side of the fourth base 141 in the second direction x. The fourth extension 142 is supported by the housing 50. A portion of the fourth extension 142 protrudes outward from the first side surface 531 of the housing 50.

[0022] 8 and 9 , the conductive member 15 is conductively joined to the first base portion 111 of the first terminal 11 and the second base portion 121 of the second terminal 12 on one side in the third direction y. This allows the first terminal 11 and the second terminal 12 to be electrically connected to each other. The conductive member 15 is a metal plate containing, for example, copper. The conductive member 15 is housed in the hollow portion 54 of the housing 50.

[0023] As shown in FIGS. 7 to 9 , the multiple first semiconductor elements 21 are located on the opposite side of the first terminal 11 from the second terminal 12 in the first direction z. The multiple first semiconductor elements 21 are also located between the first base portion 111 of the first terminal 11 and the third base portion 131 of the third terminal 13. The multiple first semiconductor elements 21 are housed in the second flow path 542 of the hollow portion 54 of the housing 50. All of the multiple first semiconductor elements 21 are the same element. The multiple first semiconductor elements 21 are, for example, metal-oxide-semiconductor field-effect transistors (MOSFETs). Alternatively, the multiple first semiconductor elements 21 may be field-effect transistors including metal-insulator-semiconductor field-effect transistors (MISFETs) or bipolar transistors such as insulated gate bipolar transistors (IGBTs). In the description of the semiconductor device A10, the multiple first semiconductor elements 21 are n-channel MOSFETs with a vertical structure. The multiple first semiconductor elements 21 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). The multiple first semiconductor elements 21 are arranged along the second direction x.

[0024] As shown in FIG. 10 , each of the plurality of first semiconductor elements 21 has a first electrode 211 , a second electrode 212 and a first gate electrode 213 .

[0025] 10 , the first electrode 211 is located on the opposite side of the third terminal 13 from the side facing the first mounting surface 131A of the third base portion 131 in the first direction z. The first electrode 211 is electrically connected to the first terminal 11 and the second terminal 12. A current corresponding to the power converted by the first semiconductor element 21 flows through the first electrode 211. In other words, the first electrode 211 corresponds to the source of the first semiconductor element 21.

[0026] 10 , the second electrode 212 faces the first mounting surface 131A of the third base portion 131 of the third terminal 13. The second electrode 212 is conductively bonded to the first mounting surface 131A via a bonding layer 29. The bonding layer 29 is solder. Alternatively, the bonding layer 29 may be a sintered metal containing silver (Ag) or the like. A current corresponding to the power before being converted by the first semiconductor element 21 flows through the second electrode 212. In other words, the second electrode 212 corresponds to the drain of the first semiconductor element 21.

[0027] 10 , the first gate electrode 213 is located on the same side as the first electrode 211 in the first direction z. A gate voltage for driving the first semiconductor element 21 is applied to the first gate electrode 213. As shown in FIG. 5 , the area of ​​the first gate electrode 213 is smaller than the area of ​​the first electrode 211 when viewed in the first direction z.

[0028] As shown in FIGS. 7 to 9 , the second semiconductor elements 22 are located on the opposite side of the first terminal 11 from the second terminal 12 in the first direction z. The second semiconductor elements 22 are also located between the second base 121 of the second terminal 12 and the fourth base 141 of the fourth terminal 14 in the first direction z. The second semiconductor elements 22 are housed in the third flow paths 543 of the hollow portion 54 of the housing 50. As viewed in the first direction z, the second semiconductor elements 22 individually overlap the first semiconductor elements 21. The second semiconductor elements 22 are identical to the first semiconductor elements 21. Therefore, the second semiconductor elements 22 are n-channel MOSFETs with a vertical structure. The second semiconductor elements 22 are arranged along the second direction x.

[0029] As shown in FIG. 11 , each of the plurality of second semiconductor elements 22 has a third electrode 221 , a fourth electrode 222 and a second gate electrode 223 .

[0030] 11 , the third electrode 221 is located on the opposite side in the first direction z to the side facing the second mounting surface 121A of the second base portion 121 of the second terminal 12. The third electrode 221 is electrically connected to the fourth terminal 14. A current corresponding to the power converted by the second semiconductor element 22 flows through the third electrode 221. In other words, the third electrode 221 corresponds to the source of the second semiconductor element 22.

[0031] 11 , the fourth electrode 222 faces the second mounting surface 121A of the second base portion 121 of the second terminal 12. The fourth electrode 222 is conductively bonded to the second mounting surface 121A via a bonding layer 29. A current corresponding to the power before being converted by the second semiconductor element 22 flows through the fourth electrode 222. In other words, the fourth electrode 222 corresponds to the drain of the second semiconductor element 22.

[0032] 11 , the second gate electrode 223 is located on the same side as the third electrode 221 in the first direction z. A gate voltage for driving the second semiconductor element 22 is applied to the second gate electrode 223. As shown in FIG. 3 , the area of ​​the second gate electrode 223 is smaller than the area of ​​the third electrode 221 when viewed in the first direction z.

[0033] As shown in FIGS. 7 to 9 , the spacers 40 include a plurality of first spacers 40A and a plurality of second spacers 40B. The spacers 40 are, for example, metal blocks containing copper. As shown in FIG. 10 , each of the first spacers 40A is conductively bonded to a first electrode 211 of one of the first semiconductor elements 21 and a first base portion 111 of the first terminal 11 via a bonding layer 29. This allows the first electrode 211 of each of the first semiconductor elements 21 to be electrically connected to the first terminal 11. The first spacers 40A are housed in a second flow path 542 in the hollow portion 54 of the housing 50. The dimension of each of the first spacers 40A in the first direction z is greater than the dimension of each of the first semiconductor elements 21 in the first direction z.

[0034] 11 , each of the multiple second spacers 40B is conductively bonded to the third electrode 221 of one of the multiple second semiconductor elements 22 and to the fourth base portion 141 of the fourth terminal 14 via the bonding layer 29. As a result, the third electrode 221 of each of the multiple second semiconductor elements 22 is electrically connected to the fourth terminal 14. The multiple second spacers 40B are housed in a third flow path 543 in the hollow portion 54 of the housing 50. The dimension of each of the multiple second spacers 40B in the first direction z is larger than the dimension of each of the multiple second semiconductor elements 22 in the first direction z.

[0035] 3, 4, 10, and 11, each of the plurality of spacers 40 has a through-hole 41 that penetrates the spacer 40 in the second direction x. The through-hole 41 of each of the plurality of first spacers 40A is connected to a second flow path 542 of the hollow portion 54 of the housing 50. The through-hole 41 of each of the plurality of second spacers 40B is connected to a third flow path 543 of the hollow portion 54.

[0036] As shown in FIGS. 4 and 5 , the first signal terminal 16 is located on one side of the first terminal 11 and the third terminal 13 in the third direction y. The first signal terminal 16 is supported by the housing 50. The first signal terminal 16 is electrically connected to the first gate electrode 213 of each of the first semiconductor elements 21. A gate voltage for driving the first semiconductor elements 21 is applied to the first signal terminal 16. The first signal terminal 16 is a metal lead containing, for example, copper. The first signal terminal 16 has an inner portion 161 and an outer portion 162. The inner portion 161 is housed in the housing 50. A portion of the inner portion 161 is housed in the hollow portion 54 of the housing 50. The inner portion 161 includes a portion extending in the second direction x. The outer portion 162 is connected to the inner portion 161. As shown in FIG. 8 , the outer portion 162 protrudes outward from a third side surface 533 of the housing 50.

[0037] Each of the multiple first leads 61 is electrically connected to one of the first gate electrodes 213 of each of the multiple first semiconductor elements 21 and the first signal terminal 16. As shown in FIG. 5 , each of the multiple first leads 61 extends in the third direction y. As shown in FIG. 8 , a portion of each of the multiple first leads 61 is housed in the second flow path 542 of the hollow portion 54 of the housing 50. The multiple first leads 61 are metal leads containing, for example, copper. One side of each of the multiple first leads 61 in the third direction y is conductively joined to the first gate electrode 213 of one of the multiple first semiconductor elements 21 via the bonding layer 29. The other side of each of the multiple first leads 61 in the third direction y is conductively joined to the inner portion 161 of the first signal terminal 16.

[0038] As shown in FIGS. 4 and 5 , the second signal terminal 17 is located on the same side as the first signal terminal 16 in the third direction y with respect to the first terminal 11 and the third terminal 13. The second signal terminal 17 is supported by the housing 50. The second signal terminal 17 is electrically connected to the first electrodes 211 of the plurality of first semiconductor elements 21. A voltage having the same potential as the voltage applied to the first electrodes 211 of the plurality of first semiconductor elements 21 is applied to the second signal terminal 17. The second signal terminal 17 is a metal lead containing, for example, copper. The second signal terminal 17 has an inner portion 171 and an outer portion 172. The inner portion 171 is housed in the housing 50. Furthermore, a portion of the inner portion 171 is housed in the hollow portion 54 of the housing 50. The inner portion 171 includes a portion extending in the second direction x. 8 and 9 , the inner part 171 is located closer to the top surface 51 of the housing 50 than the inner part 161 of the first signal terminal 16. The outer part 172 is connected to the inner part 171. As shown in FIG. 9 , the outer part 172 protrudes outward from the third side surface 533 of the housing 50.

[0039] Each of the multiple second leads 62 is electrically connected to one of the first electrodes 211 of each of the multiple first semiconductor elements 21 and the second signal terminal 17. As shown in FIG. 5 , when viewed in the first direction z, each of the multiple second leads 62 extends in the third direction y. As shown in FIG. 9 , each of the multiple second leads 62 straddles the inner portion 161 of the first signal terminal 16. A portion of each of the multiple second leads 62 is housed in the second flow path 542 of the hollow portion 54 of the housing 50. The multiple second leads 62 are metal leads containing, for example, copper. One side of each of the multiple second leads 62 in the third direction y is conductively joined to the first electrode 211 of one of the multiple first semiconductor elements 21. The other side of each of the multiple second leads 62 in the third direction y is conductively joined to the inner portion 171 of the second signal terminal 17.

[0040] As shown in FIGS. 2 and 3 , the third signal terminal 18 is located on one side of the second terminal 12 and the fourth terminal 14 in the third direction y. When viewed in the first direction z, the third signal terminal 18 overlaps the first signal terminal 16. The third signal terminal 18 is supported by the housing 50. The third signal terminal 18 is electrically connected to the second gate electrodes 223 of the second semiconductor elements 22. A gate voltage for driving the second semiconductor elements 22 is applied to the third signal terminal 18. The third signal terminal 18 is a metal lead containing, for example, copper. The third signal terminal 18 has an inner portion 181 and an outer portion 182. The inner portion 181 is housed in the housing 50. A portion of the inner portion 181 is housed in the hollow portion 54 of the housing 50. The inner portion 181 includes a portion extending in the second direction x. The outer portion 182 is connected to the inner portion 181. As shown in FIG. 8 , the outer part 182 protrudes outward from the third side surface 533 of the housing 50 .

[0041] Each of the multiple third leads 63 is electrically connected to one of the second gate electrodes 223 of each of the multiple second semiconductor elements 22 and the third signal terminal 18. As shown in FIG. 3 , each of the multiple third leads 63 extends in the third direction y. As shown in FIG. 8 , a portion of each of the multiple third leads 63 is housed in a third flow path 543 of the hollow portion 54 of the housing 50. The multiple third leads 63 are metal leads containing, for example, copper. One side of each of the multiple third leads 63 in the third direction y is conductively joined to the second gate electrode 223 of one of the multiple second semiconductor elements 22 via a bonding layer 29. The other side of each of the multiple third leads 63 in the third direction y is conductively joined to the inner portion 181 of the third signal terminal 18.

[0042] As shown in FIGS. 2 and 3 , the fourth signal terminal 19 is located on the same side as the third signal terminal 18 in the third direction y with respect to the second terminal 12 and the fourth terminal 14. When viewed in the first direction z, the fourth signal terminal 19 overlaps the second signal terminal 17. The fourth signal terminal 19 is supported by the housing 50. The fourth signal terminal 19 is electrically connected to the third electrodes 221 of the second semiconductor elements 22. A voltage having the same potential as the voltage applied to the third electrodes 221 of the second semiconductor elements 22 is applied to the fourth signal terminal 19. The fourth signal terminal 19 is a metal lead containing, for example, copper. The fourth signal terminal 19 has an inner portion 191 and an outer portion 192. The inner portion 191 is housed in the housing 50. A portion of the inner portion 191 is housed in the hollow portion 54 of the housing 50. The inner portion 191 includes a portion extending in the second direction x. 8 and 9 , the inner part 191 is located closer to the top surface 51 of the housing 50 than the inner part 181 of the third signal terminal 18. The outer part 192 is connected to the inner part 191. As shown in FIG. 9 , the outer part 192 protrudes outward from the third side surface 533 of the housing 50.

[0043] Each of the multiple fourth leads 64 is electrically connected to one of the third electrodes 221 of each of the multiple second semiconductor elements 22 and the fourth signal terminal 19. As shown in FIG. 3 , when viewed in the first direction z, each of the multiple fourth leads 64 extends in the third direction y. As shown in FIG. 9 , each of the multiple fourth leads 64 straddles the inner portion 181 of the third signal terminal 18. A portion of each of the multiple fourth leads 64 is housed in the third flow path 543 of the hollow portion 54 of the housing 50. The multiple fourth leads 64 are metal leads containing, for example, copper. One side of each of the multiple fourth leads 64 in the third direction y is conductively joined to the third electrode 221 of one of the multiple second semiconductor elements 22. The other side of each of the multiple fourth leads 64 in the third direction y is conductively joined to the inner portion 191 of the fourth signal terminal 19.

[0044] As shown in FIGS. 7 to 9 , the multiple first heat dissipation members 31 are connected to the first base portion 111 of the first terminal 11 and the second base portion 121 of the second terminal 12. The multiple first heat dissipation members 31 are housed in the first flow passage 541 of the hollow portion 54 of the housing 50. The multiple first heat dissipation members 31 are, for example, rod members containing copper. Each of the multiple first heat dissipation members 31 extends in the first direction z. In the semiconductor device A10, one side of each of the multiple first heat dissipation members 31 in the first direction z is conductively joined to the second base portion 121 by, for example, laser welding. The other side of each of the multiple first heat dissipation members 31 in the first direction z is conductively joined to the first base portion 111 by, for example, laser welding. Here, as shown in FIG. 10 , multiple support portions 113 penetrating in the first direction z are provided in at least one of the first base portion 111 and the second base portion 121. A portion of each of the plurality of first heat dissipation members 31 is individually housed in a plurality of support portions 113 .

[0045] As shown in FIGS. 7 and 8 , the multiple third heat dissipation members 33 are connected to the third base portion 131 of the third terminal 13. The multiple third heat dissipation members 33 are located on the opposite side of the multiple first semiconductor elements 21 from the third terminal 13 in the first direction z. The multiple third heat dissipation members 33 are housed in the hollow portion 54 of the housing 50. The multiple third heat dissipation members 33 are, for example, rod members containing copper. Each of the multiple third heat dissipation members 33 extends in the first direction z. In the semiconductor device A10, one side of each of the multiple third heat dissipation members 33 in the first direction z is conductively joined to the third base portion 131 by, for example, laser welding.

[0046] As shown in FIGS. 7 and 8 , the multiple fourth heat dissipation members 34 are connected to the fourth base portion 141 of the fourth terminal 14. The multiple fourth heat dissipation members 34 are located on the opposite side of the multiple second semiconductor elements 22 from the fourth terminal 14 in the first direction z. The multiple fourth heat dissipation members 34 are housed in the hollow portion 54 of the housing 50. The multiple fourth heat dissipation members 34 are, for example, rod members containing copper. Each of the multiple fourth heat dissipation members 34 extends in the first direction z. In the semiconductor device A10, one side of each of the multiple fourth heat dissipation members 34 in the first direction z is conductively joined to the fourth base portion 141 by, for example, laser welding.

[0047] Next, a semiconductor device A11 according to a first modification of the first embodiment of the present disclosure will be described with reference to Fig. 13. Fig. 13 corresponds to Fig. 10 .

[0048] As shown in FIG. 13 , the semiconductor device A11 differs from the semiconductor device A10 in the configuration of the first terminal 11 and the multiple first heat dissipation members 31. The multiple support portions 113 provided on the first base portion 111 of the first terminal 11 are recessed from one side of the first base portion 111 in the first direction z. Each of the multiple first heat dissipation members 31 has a first main portion 311 and a first engaging portion 312. The first main portion 311 is connected to the second base portion 121 of the second terminal 12. The first engaging portion 312 is located on the opposite side of the second base portion 121 in the first direction z relative to the first main portion 311. The first engaging portion 312 protrudes from the first main portion 311 in the first direction z. The first engaging portion 312 is inserted into one of the multiple support portions 113. The first engaging portion 312 is conductively bonded to the first base portion 111 via a bonding layer 29.

[0049] Next, a semiconductor device A12 according to a second modification of the first embodiment of the present disclosure will be described with reference to Fig. 14. Fig. 14 corresponds to Fig. 10 .

[0050] 14 , the semiconductor device A12 differs in the configuration of the spacers 40 from that of the semiconductor device A10. Each of the spacers 40 has a plurality of peripheral surfaces 42 that face a direction perpendicular to the first direction z. In the semiconductor device A12, each of the spacers 40 has two grooves 43 that are individually recessed from two regions of the peripheral surfaces 42 that are spaced apart from each other in the third direction y. Each of the two grooves 43 extends in the second direction x. Each of the two grooves 43 is defined by a curved surface that is recessed in the third direction y.

[0051] Next, a semiconductor device A13 according to a third modification of the first embodiment of the present disclosure will be described with reference to Fig. 15. Fig. 15 corresponds to Fig. 10 .

[0052] 15 , the semiconductor device A13 differs in the configuration of the spacers 40 from that of the semiconductor device A10. Each of the spacers 40 has a plurality of peripheral surfaces 42 that face a direction perpendicular to the first direction z. In the semiconductor device A13, each of the spacers 40 has a plurality of grooves 43 recessed from two regions of the peripheral surfaces 42 that are spaced apart from each other in the third direction y. Each of the grooves 43 extends in the second direction x. The grooves 43 are arranged in the first direction z.

[0053] Next, a vehicle B equipped with the semiconductor device A10 will be described with reference to Fig. 16. The vehicle B is, for example, an electric vehicle (EV).

[0054] As shown in Fig. 16, vehicle B includes an on-board charger 81, a storage battery 82, and a drive system 83. Power is supplied to the on-board charger 81 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 81 via a wired connection. The on-board charger 81 is configured with a step-up DC-DC converter. The voltage of the power supplied to the on-board charger 81 is stepped up by the converter and then supplied to the storage battery 82. The stepped-up voltage is, for example, 600 V.

[0055] The drive system 83 drives the vehicle B. The drive system 83 includes an inverter 831 and a drive source 832. The semiconductor device A10 constitutes part of the inverter 831. Power stored in the storage battery 82 is supplied to the inverter 831. The power supplied from the storage battery 82 to the inverter 831 is DC power. Alternatively, unlike the power system shown in FIG. 16 , a step-up DC-DC converter may be further provided between the storage battery 82 and the inverter 831. The inverter 831 converts DC power into AC power. The inverter 831 including the semiconductor device A10 is connected to the drive source 832. The drive source 832 includes an AC motor and a transmission. When the AC power converted by the inverter 831 is supplied to the drive source 832, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle B. This drives vehicle B. To drive vehicle B, it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of accelerator pedal fluctuation. Therefore, semiconductor device A10 in inverter 831 is necessary to output AC power whose frequency has been appropriately changed to correspond to the required rotation speed of the AC motor.

[0056] Next, the effects of the semiconductor device A10 will be described.

[0057] The semiconductor device A10 includes a first terminal 11, a second terminal 12, a first semiconductor element 21, and a first heat dissipation member 31. The first semiconductor element 21 is located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z and is electrically connected to the first terminal 11. The first heat dissipation member 31 is connected to the first terminal 11. A first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first heat dissipation member 31 is housed in the first flow path 541. With this configuration, as shown in FIG. 12 , when a refrigerant 70 flows into the hollow portion 54 of the housing 50, the refrigerant 70 flows down the first flow path 541. As a result, the refrigerant 70 comes into direct contact with the first heat dissipation member 31, thereby improving the cooling efficiency of the semiconductor device A10 compared to conventional devices. Therefore, with this configuration, the cooling efficiency of the semiconductor device A10 can be further improved.

[0058] The first terminal 11 and the second terminal 12 are in contact with the first flow path 541. With this configuration, the coolant 70 also comes into direct contact with the first terminal 11 and the second terminal 12, thereby further improving the cooling efficiency of the semiconductor device A10.

[0059] The first heat dissipation member 31 is connected to the second terminal 12. The second semiconductor element 22 is conductively joined to the second terminal 12. With this configuration, heat conducted from the second semiconductor element 22 to the second terminal 12 can be dissipated to the coolant 70 via the first heat dissipation member 31.

[0060] The semiconductor device A10 further includes a third terminal 13 located on the opposite side of the first terminal 11 with respect to the first semiconductor element 21. The first semiconductor element 21 is electrically connected to the third terminal 13. A second flow path 542 is provided between the first terminal 11 and the third terminal 13 in the first direction z. The first semiconductor element 21 is accommodated in the second flow path 542. With this configuration, as shown in FIG. 12 , when a coolant 70 is introduced into the hollow portion 54 of the housing 50, the coolant 70 flows down the second flow path 542. This allows the coolant 70 to come into direct contact with the first semiconductor element 21, thereby further improving the cooling efficiency of the semiconductor device A10.

[0061] The semiconductor device A10 further includes a first spacer 40A conductively bonded to the first terminal 11 and the first semiconductor element 21. The first spacer 40A is housed in the second flow path 542. The dimension of the first spacer 40A in the first direction z is larger than the dimension of the first semiconductor element 21 in the first direction z. This configuration allows the refrigerant 70 to directly contact the first spacer 40A, further improving the cooling efficiency of the semiconductor device A10. Furthermore, the first spacer 40A more appropriately ensures the size of the flow-down cross section of the second flow path 542.

[0062] The first spacer 40A has a through-hole 41 that penetrates the first spacer 40A in a direction perpendicular to the first direction z. This configuration increases the surface area of ​​the first spacer 40A and allows the coolant 70 to flow down the through-hole 41. This more effectively improves the cooling efficiency of the semiconductor device A10.

[0063] The semiconductor device A10 further includes a housing 50 that supports the first terminal 11, the second terminal 12, and the third terminal 13. The housing 50 is provided with an inlet 55 and an outlet 56. The inlet 55 and the outlet 56 are located on opposite sides of the first heat dissipation member 31 in a direction perpendicular to the first direction z. This configuration allows the refrigerant 70 to flow downward so that the refrigerant 70 can easily come into direct contact with the first heat dissipation member 31.

[0064] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 17 and 18. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 17 corresponds to Figure 7, which shows the semiconductor device A10. Figure 18 corresponds to Figure 8, which shows the semiconductor device A10.

[0065] In the semiconductor device A20, the configuration of the plurality of first heat dissipation members 31 is different from that of the semiconductor device A10.

[0066] 17 and 18 , each of the multiple first heat dissipation members 31 is spaced apart from the second terminal 12. As a result, a gap is provided in the first direction z between the multiple first heat dissipation members 31 and the second base portion 121 of the second terminal 12. The gap corresponds to a part of the first flow path 541 of the hollow portion 54 of the housing 50.

[0067] Next, the effects of the semiconductor device A20 will be described.

[0068] The semiconductor device A20 includes a first terminal 11, a second terminal 12, a first semiconductor element 21, and a first heat dissipation member 31. The first semiconductor element 21 is located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z and is electrically connected to the first terminal 11. The first heat dissipation member 31 is connected to the first terminal 11. A first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first heat dissipation member 31 is housed in the first flow path 541. Therefore, this configuration enables the semiconductor device A20 to further improve cooling efficiency. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0069] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 19 to 22. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 19 corresponds to Figure 5, which shows the semiconductor device A10.

[0070] In the semiconductor device A30, the configuration of the spacers 40 is different from that of the semiconductor device A10.

[0071] 19 to 21 , each of the plurality of spacers 40 has a first seat 44 and a plurality of pillar portions 45. The plurality of pillar portions 45 are located on the opposite side of either the plurality of first semiconductor elements 21 or the plurality of second semiconductor elements 22 in the first direction z, with the first seat portion 44 as the reference. The plurality of pillar portions 45 are spaced apart from one another in a direction perpendicular to the first direction z. Each of the plurality of pillar portions 45 is electrically connected to the first seat portion 44.

[0072] 22 , in each of the multiple first spacers 40A, the first seat portion 44 is conductively joined to the first electrode 211 of one of the multiple first semiconductor elements 21 via the bonding layer 29. Each of the multiple pillar portions 45 is conductively joined to the first base portion 111 of the first terminal 11 by, for example, laser welding. As a result, in each of the multiple first spacers 40A, each of the multiple pillar portions 45 is electrically connected to the first terminal 11.

[0073] Similar to the configuration of the plurality of first spacers 40A, in each of the plurality of second spacers 40B, the first seat portion 44 is conductively joined to the third electrode 221 of one of the plurality of second semiconductor elements 22 via the bonding layer 29. Each of the plurality of pillar portions 45 is conductively joined to the fourth base portion 141 of the fourth terminal 14 by, for example, laser welding. As a result, in each of the plurality of second spacers 40B, each of the plurality of pillar portions 45 is electrically connected to the fourth terminal 14.

[0074] Next, a semiconductor device A31 according to a modification of the third embodiment of the present disclosure will be described with reference to Fig. 23. Fig. 23 corresponds to Fig. 22 .

[0075] 23 , the semiconductor device A31 differs from the semiconductor device A30 in the configuration of the multiple first spacers 40A. Each of the multiple first spacers 40A has a first seat 44, multiple pillars 45, and a second seat 46. The second seat 46 is located on the opposite side of the multiple pillars 45 from the first seat 44 in the first direction z. Each of the multiple pillars 45 is electrically connected to the second seat 46. The second seat 46 is conductively bonded to the first base 111 of the first terminal 11 via a bonding layer 29.

[0076] Next, the effects of the semiconductor device A30 will be described.

[0077] The semiconductor device A30 includes a first terminal 11, a second terminal 12, a first semiconductor element 21, and a first heat dissipation member 31. The first semiconductor element 21 is located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z and is electrically connected to the first terminal 11. The first heat dissipation member 31 is connected to the first terminal 11. A first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first heat dissipation member 31 is housed in the first flow path 541. Therefore, this configuration enables the semiconductor device A30 to further improve cooling efficiency. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0078] In the semiconductor device A30, the first spacer 40A has a first seat 44 conductively bonded to the first semiconductor element 21 and a plurality of pillars 45 located on the opposite side of the first semiconductor element 21 from the first seat 44 in the first direction z. The pillars 45 are spaced apart in a direction perpendicular to the first direction z. Each of the pillars 45 is electrically connected to the first seat 44 and is conductive to the first terminal 11. This configuration further increases the surface area of ​​the first spacer 40A, thereby more effectively improving the cooling efficiency of the semiconductor device A30.

[0079] Fourth Embodiment: A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to Figures 24 and 25. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 24 corresponds to Figure 7 showing the semiconductor device A10. Figure 25 corresponds to Figure 8 showing the semiconductor device A10.

[0080] In the semiconductor device A40, the configuration of the plurality of first heat dissipation members 31 is different from that of the semiconductor device A10.

[0081] As shown in Figures 24 and 25, the cross-sectional size of each of the multiple first heat dissipation members 31 perpendicular to the first direction z increases from the first base 111 of the first terminal 11 to the second base 121 of the second terminal 12.

[0082] Next, the effects of the semiconductor device A40 will be described.

[0083] The semiconductor device A40 includes a first terminal 11, a second terminal 12, a first semiconductor element 21, and a first heat dissipation member 31. The first semiconductor element 21 is located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z and is electrically connected to the first terminal 11. The first heat dissipation member 31 is connected to the first terminal 11. A first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first heat dissipation member 31 is housed in the first flow path 541. Therefore, this configuration enables the semiconductor device A40 to further improve cooling efficiency. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A40 achieves the same effects as the semiconductor device A10.

[0084] In the semiconductor device A40, the size of the cross section of the first heat dissipation member 31 perpendicular to the first direction z increases from the first terminal 11 to the second terminal 12. This configuration further increases the surface area of ​​the first heat dissipation member 31. Furthermore, heat conducted from the first semiconductor element 21 to the first heat dissipation member 31 is more easily diffused in the first heat dissipation member 31. This more effectively improves the cooling efficiency of the semiconductor device A40.

[0085] Fifth Embodiment: A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to Figures 26 to 28. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 26 corresponds to Figure 3, which shows the semiconductor device A10. Figure 27 corresponds to Figure 5, which shows the semiconductor device A10.

[0086] In the semiconductor device A50, the configurations of the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22 are different from those of the semiconductor device A10.

[0087] 26 and 27 , the number of the plurality of first semiconductor elements 21 and the number of the plurality of second semiconductor elements 22 are both 2. As shown in Fig. 26 and 28 , when viewed in the first direction z, each of the plurality of second semiconductor elements 22 is spaced apart from the plurality of first semiconductor elements 21.

[0088] Next, the effects of the semiconductor device A50 will be described.

[0089] The semiconductor device A50 includes a first terminal 11, a second terminal 12, a first semiconductor element 21, and a first heat dissipation member 31. The first semiconductor element 21 is located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z and is electrically connected to the first terminal 11. The first heat dissipation member 31 is connected to the first terminal 11. A first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first heat dissipation member 31 is accommodated in the first flow path 541. Therefore, this configuration enables the semiconductor device A50 to further improve cooling efficiency. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A50 achieves the same effects as the semiconductor device A10.

[0090] In the semiconductor device A50, when viewed in the first direction z, the second semiconductor element 22 is spaced apart from the first semiconductor element 21. This configuration can reduce the concentration of heat distribution at the second terminal 12 caused by heat generation from the first semiconductor element 21 and the second semiconductor element 22.

[0091] Sixth Embodiment: A semiconductor device A60 according to a sixth embodiment of the present disclosure will be described with reference to Figures 29 to 31. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 29 corresponds to Figure 7, which shows the semiconductor device A10. Figure 30 corresponds to Figure 8, which shows the semiconductor device A10.

[0092] The semiconductor device A60 differs from the semiconductor device A10 in the configuration of the plurality of first heat dissipation members 31 and in that it further includes a plurality of second heat dissipation members 32.

[0093] As shown in FIGS. 29 and 30 , the multiple first heat dissipation members 31 are connected to the first base portion 111 of the first terminal 11. The multiple second heat dissipation members 32 are connected to the second base portion 121 of the second terminal 12. The multiple first heat dissipation members 31 and the multiple second heat dissipation members 32 are housed in a first flow path 541 of the hollow portion 54 of the housing 50. The multiple second heat dissipation members 32 are, for example, rod members containing copper. Each of the multiple second heat dissipation members 32 extends in the first direction z. In the semiconductor device A60, one side of each of the multiple second heat dissipation members 32 in the first direction z is conductively joined to the second base portion 121 by, for example, laser welding.

[0094] As shown in FIG. 31 , each of the multiple first heat dissipation members 31 has a first main portion 311 and a first engaging portion 312. The first main portion 311 is connected to the first base portion 111 of the first terminal 11. The first engaging portion 312 is recessed from one side of the first main portion 311 in the first direction z. Each of the second heat dissipation members 32 has a second main portion 321 and a second engaging portion 322. The second engaging portion 322 is connected to the second base portion 121 of the second terminal 12. The second engaging portion 322 protrudes from one side of the second main portion 321 in the first direction z. The second engaging portion 322 of each of the multiple second heat dissipation members 32 is individually inserted into the first engaging portion 312 of each of the multiple first heat dissipation members 31. The second engaging portion 322 of each of the multiple second heat dissipation members 32 is individually conductively bonded to the multiple first heat dissipation members 31 via a bonding layer 29.

[0095] Next, a semiconductor device A61 according to a modification of the sixth embodiment of the present disclosure will be described with reference to Fig. 32. Fig. 32 corresponds to Fig. 31 .

[0096] 32 , in the semiconductor device A61, the configuration of each of the multiple first heat dissipation members 31 and the multiple second heat dissipation members 32 differs from that of the semiconductor device A60. The size of the cross section perpendicular to the first direction z of the second engagement portion 322 of each of the multiple second heat dissipation members 32 decreases from the second main portion 321 toward the first main portion 311 of any of the multiple first heat dissipation members 31. At least a portion of the first engagement portion 312 of each of the multiple first heat dissipation members 31 and at least a portion of the second engagement portion 322 of each of the multiple second heat dissipation members 32 are defined by curved surfaces.

[0097] Next, the effects of the semiconductor device A60 will be described.

[0098] The semiconductor device A60 includes a first terminal 11, a second terminal 12, a first semiconductor element 21, and a first heat dissipation member 31. The first semiconductor element 21 is located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z and is electrically connected to the first terminal 11. The first heat dissipation member 31 is connected to the first terminal 11. A first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first heat dissipation member 31 is accommodated in the first flow path 541. Therefore, with this configuration, the cooling efficiency of the semiconductor device A60 can be further improved. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A60 achieves the same effects as the semiconductor device A10.

[0099] The semiconductor device A60 further includes a second heat dissipation member 32 connected to the second terminal 12. The second heat dissipation member 32 is housed in the first flow path 541. The second heat dissipation member 32 is connected to the first heat dissipation member 31. The first heat dissipation member 31 has a first main portion 311 and a first engaging portion 312. The second heat dissipation member 32 has a second main portion 321 and a second engaging portion 322. The second engaging portion 322 is inserted into the first engaging portion 312. This configuration makes it possible to prevent the second heat dissipation member 32 from shifting in position relative to the first heat dissipation member 31 when connecting the second heat dissipation member 32 to the first heat dissipation member 31.

[0100] Seventh Embodiment: A semiconductor device A70 according to a seventh embodiment of the present disclosure will be described with reference to Figures 33 to 35. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, Figure 33 corresponds to Figure 4, which shows the semiconductor device A10.

[0101] In the semiconductor device A70, the configuration of the plurality of second heat dissipation members 32 is different from that of the semiconductor device A60.

[0102] 33 , when viewed in the first direction z, each of the second heat dissipation members 32 is spaced apart from the first heat dissipation members 31. As shown in FIGS. 34 and 35 , each of the second heat dissipation members 32 is spaced apart from the first terminal 11.

[0103] Next, the effects of the semiconductor device A70 will be described.

[0104] The semiconductor device A70 includes a first terminal 11, a second terminal 12, a first semiconductor element 21, and a first heat dissipation member 31. The first semiconductor element 21 is located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z and is electrically connected to the first terminal 11. The first heat dissipation member 31 is connected to the first terminal 11. A first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first heat dissipation member 31 is housed in the first flow path 541. Therefore, this configuration enables the semiconductor device A70 to further improve cooling efficiency. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A70 achieves the same effects as the semiconductor device A10.

[0105] In the semiconductor device A70, when viewed in the first direction z, the second heat dissipation member 32 is spaced apart from the first heat dissipation member 31. The second heat dissipation member 32 is spaced apart from the first terminal 11. This configuration reduces the concentration of heat distribution in each of the first terminal 11 and the second terminal 12 due to heat generation from the first semiconductor element 21 and the second semiconductor element 22.

[0106] 36 to 39, a semiconductor device A80 according to an eighth embodiment of the present disclosure will be described. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted.

[0107] In the semiconductor device A80, the configurations of the third terminal 13 and the fourth terminal 14 are different from those of the semiconductor device A10. Furthermore, the semiconductor device A80 does not include the plurality of third heat dissipation members 33 and the plurality of fourth heat dissipation members 34.

[0108] 37 to 39 , the third base portion 131 of the third terminal 13 has a first exposed surface 131B that faces the side opposite to the side on which the multiple first semiconductor elements 21 are located in the first direction z. The first exposed surface 131B is exposed from the bottom surface 52 of the housing 50. The dimension of the third base portion 131 in the first direction z is larger than the dimension of the first base portion 111 of the first terminal 11 in the first direction z.

[0109] 36 , 38 , and 39 , the fourth base portion 141 of the fourth terminal 14 has a second exposed surface 141A that faces the side opposite to the side on which the multiple second semiconductor elements 22 are located in the first direction z. The second exposed surface 141A is exposed from the top surface 51 of the housing 50. The dimension of the fourth base portion 141 in the first direction z is larger than the dimension of the second base portion 121 of the second terminal 12 in the first direction z.

[0110] Next, the effects of the semiconductor device A80 will be described.

[0111] The semiconductor device A80 includes a first terminal 11, a second terminal 12, a first semiconductor element 21, and a first heat dissipation member 31. The first semiconductor element 21 is located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z and is electrically connected to the first terminal 11. The first heat dissipation member 31 is connected to the first terminal 11. A first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first heat dissipation member 31 is accommodated in the first flow path 541. Therefore, this configuration enables the semiconductor device A80 to further improve cooling efficiency. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A80 achieves the same effects as the semiconductor device A10.

[0112] In the semiconductor device A80, the third terminal 13 has a first exposed surface 131B facing in the first direction z opposite to the side on which the first semiconductor element 21 is located. The fourth terminal 14 has a second exposed surface 141A facing in the first direction z opposite to the side on which the second semiconductor element 22 is located. The first exposed surface 131B and the second exposed surface 141A are exposed from the housing 50. This configuration makes it possible to further reduce the dimension of the semiconductor device A80 in the first direction z.

[0113] Ninth Embodiment: A semiconductor device A90 according to a ninth embodiment of the present disclosure will be described with reference to FIGS. 40 to 45. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, FIG. 40 corresponds to FIG. 3, which shows the semiconductor device A10. FIG. 41 corresponds to FIG. 5, which shows the semiconductor device A10.

[0114] In the semiconductor device A90, the configurations of the second terminal 12, the third terminal 13, the plurality of first semiconductor elements 21, and the plurality of second semiconductor elements 22 are different from those of the semiconductor device A10.

[0115] 41 to 43 , the third base portion 131 of the third terminal 13 is provided with a plurality of first openings 133 that are recessed from one side in the third direction y and that penetrate the third base portion 131 in the first direction z. As viewed in the first direction z, the plurality of first semiconductor elements 21 individually overlap the plurality of first openings 133. A portion of each of the plurality of first leads 61 and a portion of each of the plurality of second leads 62 are individually housed in the plurality of first openings 133.

[0116] 44 , the first electrode 211 of each of the multiple first semiconductor elements 21 is conductively bonded to the first mounting surface 131A of the third base portion 131 of the third terminal 13 via a bonding layer 29. The second electrode 212 of each of the multiple first semiconductor elements 21 is individually conductively bonded to the multiple first spacers 40A via the bonding layer 29. As a result, the first electrode 211 of each of the multiple first semiconductor elements 21 is electrically connected to the third terminal 13. The second electrode 212 of each of the multiple first semiconductor elements 21 is electrically connected to the first terminal 11.

[0117] 40 , 42 , and 43 , the second base portion 121 of the second terminal 12 is provided with a plurality of second openings 123 that are recessed from one side in the third direction y and penetrate the second base portion 121 in the first direction z. As viewed in the first direction z, the second semiconductor elements 22 individually overlap the second openings 123. A portion of each of the third leads 63 and a portion of each of the fourth leads 64 are individually housed in the second openings 123.

[0118] 45 , the third electrode 221 of each of the multiple second semiconductor elements 22 is conductively bonded to the second mounting surface 121A of the second base portion 121 of the second terminal 12 via the bonding layer 29. The fourth electrode 222 of each of the multiple second semiconductor elements 22 is individually conductively bonded to the multiple second spacers 40B via the bonding layer 29. As a result, the third electrode 221 of each of the multiple second semiconductor elements 22 is electrically connected to the second terminal 12. The fourth electrode 222 of each of the multiple second semiconductor elements 22 is electrically connected to the fourth terminal 14. As described above, in the semiconductor device A90, the fourth terminal 14 is a P-terminal, and the third terminal 13 is an N-terminal.

[0119] Next, the effects of the semiconductor device A90 will be described.

[0120] The semiconductor device A90 includes a first terminal 11, a second terminal 12, a first semiconductor element 21, and a first heat dissipation member 31. The first semiconductor element 21 is located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z and is electrically connected to the first terminal 11. The first heat dissipation member 31 is connected to the first terminal 11. A first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first heat dissipation member 31 is housed in the first flow path 541. Therefore, with this configuration, the cooling efficiency of the semiconductor device A90 can be further improved. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A90 achieves the same effects as the semiconductor device A10.

[0121] Tenth Embodiment: A semiconductor device A100 according to a tenth embodiment of the present disclosure will be described with reference to FIGS. 46 to 51. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. Here, FIG. 47 corresponds to FIG. 2, which shows the semiconductor device A10. FIG. 48 corresponds to FIG. 3, which shows the semiconductor device A10. FIG. 49 corresponds to FIG. 5, which shows the semiconductor device A10.

[0122] In the semiconductor device A100, the configurations of the first terminal 11, the second terminal 12, the third terminal 13, the fourth terminal 14, the first signal terminal 16, the second signal terminal 17, the third signal terminal 18, the fourth signal terminal 19, the housing 50, the plurality of first semiconductor elements 21, and the plurality of second semiconductor elements 22 are different from those of the semiconductor device A10. Furthermore, the semiconductor device A100 includes two conductive members 15 instead of the conductive member 15.

[0123] In the semiconductor device A100, the first terminal 11 does not have a first extension portion 112. As shown in FIGS. 48 and 51 , the second extension portion 122 of the second terminal 12 is located on one side of the second base portion 121 in the third direction y. The second extension portion 122 is conductively joined to the second base portion 121 via a pillow portion 122A. As shown in FIGS. 46 and 51 , a portion of the second extension portion 122 protrudes outward from the third side surface 533 of the housing 50.

[0124] As shown in Figures 47, 49, and 50, the third extension portion 132 of the third terminal 13 and the fourth extension portion 142 of the fourth terminal 14 are located on the opposite side of the second extension portion 122 of the second terminal 12 in the third direction y, relative to the plurality of first semiconductor elements 21 and the plurality of second semiconductor elements 22. As shown in Figures 46, 50, and 51, a portion of each of the third extension portion 132 and the fourth extension portion 142 protrudes outward from the fourth side surface 534 of the housing 50. The third extension portion 132 and the fourth extension portion 142 are spaced apart from each other in the second direction x. As shown in Figure 48, the two conductive members 15 are located on either side of the first base portion 111 of the first terminal 11 and the second base portion 121 of the second terminal 12 in the third direction y.

[0125] 46 and 49 , the outer portion 162 of the first signal terminal 16 and the outer portion 172 of the second signal terminal 17 protrude to the outside from the first side surface 531 of the housing 50. As shown in FIG. 46 , the outer portion 182 of the third signal terminal 18 and the outer portion 192 of the fourth signal terminal 19 protrude to the outside from the first side surface 531.

[0126] 46 , the inlet 55 of the housing 50 opens at the second side surface 532 of the housing 50. The outlet 56 of the housing 50 opens at the first side surface 531.

[0127] As shown in FIGS. 49 to 51 , the multiple first semiconductor elements 21 include multiple first switching elements 21A and multiple first diodes 21B. The multiple first diodes 21B are individually connected in parallel to the multiple first switching elements 21A. Each of the multiple first switching elements 21A has a first electrode 211, a second electrode 212, and a first gate electrode 213. The multiple first switching elements 21A are transistors such as MOSFETs and IGBTs. In the semiconductor device A100, the multiple first switching elements 21A are, for example, MOSFETs. The multiple first diodes 21B have a first electrode 211 that is an anode and a second electrode 212 that is a cathode. In the semiconductor device A100, the multiple first diodes 21B function as freewheeling diodes for the multiple first switching elements 21A. In the semiconductor device A100, the multiple first diodes 21B are, for example, Schottky barrier diodes. The plurality of first spacers 40A are individually conductively bonded to the first electrodes 211 of the plurality of first switching elements 21A and the plurality of first diodes 21B.

[0128] As shown in FIGS. 48, 50, and 51, the second semiconductor elements 22 include a plurality of second switching elements 22A and a plurality of second diodes 22B. The second diodes 22B are individually connected in parallel to the second switching elements 22A. Each of the second switching elements 22A has a third electrode 221, a fourth electrode 222, and a second gate electrode 223. The second switching elements 22A are the same elements as the first switching elements 21A. The second diodes 22B have the third electrode 221, which is an anode, and the fourth electrode 222, which is a cathode. In the semiconductor device A100, the second diodes 22B function as freewheeling diodes for the second switching elements 22A. The second diodes 22B are the same elements as the first diodes 21B. The second spacers 40B are individually conductively bonded to the third electrodes 221 of the second switching elements 22A and the second diodes 22B.

[0129] Therefore, like the semiconductor device A100, the multiple first semiconductor elements 21 may be configured to include multiple types of elements rather than all being the same elements. Similarly, the multiple second semiconductor elements 22 may be configured to include multiple types of elements rather than all being the same elements.

[0130] Next, the effects of the semiconductor device A100 will be described.

[0131] The semiconductor device A100 includes a first terminal 11, a second terminal 12, a first semiconductor element 21, and a first heat dissipation member 31. The first semiconductor element 21 is located on the opposite side of the second terminal 12 from the first terminal 11 in the first direction z and is electrically connected to the first terminal 11. The first heat dissipation member 31 is connected to the first terminal 11. A first flow path 541 is provided between the first terminal 11 and the second terminal 12 in the first direction z. The first heat dissipation member 31 is housed in the first flow path 541. Therefore, this configuration enables the semiconductor device A100 to further improve cooling efficiency. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A100 achieves the same effects as the semiconductor device A10.

[0132] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0133] The present disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a first terminal; a second terminal located on one side of the first terminal in a first direction; a first semiconductor element located on the opposite side of the first terminal from the second terminal and conducting to the first terminal; and a first heat dissipation member connected to the first terminal, wherein a first flow path is provided between the first terminal and the second terminal in the first direction, and the first heat dissipation member is housed in the first flow path. Appendix 2. The semiconductor device according to Appendix 1, wherein the first terminal and the second terminal are in contact with the first flow path. Appendix 3. The semiconductor device according to Appendix 2, wherein the first heat dissipation member is spaced from the second terminal. Appendix 4. The semiconductor device according to Appendix 3, further comprising: a second heat dissipation member connected to the second terminal, and the second heat dissipation member is housed in the first flow path. Appendix 5. The semiconductor device according to Appendix 4, wherein the second heat dissipation member is connected to the first heat dissipation member. Appendix 6. The semiconductor device according to Appendix 5, wherein the first heat dissipation member has a first main portion connected to the first terminal and a first engagement portion recessed from one side of the first main portion in the first direction, and the second heat dissipation member has a second main portion connected to the second terminal and a second engagement portion protruding from one side of the second main portion in the first direction, and the second engagement portion is inserted into the first engagement portion. Appendix 7. The semiconductor device according to Appendix 4, wherein the second heat dissipation member is spaced apart from the first heat dissipation member when viewed in the first direction. Appendix 8. The semiconductor device according to Appendix 7, wherein the second heat dissipation member is spaced apart from the first terminal. Appendix 9. The semiconductor device according to Appendix 2, wherein the first heat dissipation member is connected to the second terminal. Appendix 10. The semiconductor device according to Appendix 9, wherein at least one of the first terminal and the second terminal is provided with a support portion penetrating in the first direction, and a portion of the first heat dissipation member is inserted into the support portion.Appendix 11. The semiconductor device according to any one of Appendixes 2 to 10, further comprising a third terminal located on the opposite side of the first terminal with respect to the first semiconductor element, the first semiconductor element being electrically connected to the third terminal, a second flow path being provided between the first terminal and the third terminal in the first direction, and the first semiconductor element being accommodated in the second flow path. Appendix 12. The semiconductor device according to Appendix 11, wherein the third terminal is in contact with the second flow path. Appendix 13. The semiconductor device according to Appendix 12, further comprising a first spacer conductively joined to the first terminal and the first semiconductor element, the first spacer being accommodated in the second flow path, and a dimension of the first spacer in the first direction being larger than a dimension of the first semiconductor element in the first direction. Appendix 14. The semiconductor device according to Appendix 13, wherein the first spacer is provided with a through portion that penetrates the first spacer in a direction perpendicular to the first direction. Appendix 15. The semiconductor device according to Appendix 13, wherein the first spacer has a peripheral surface facing a direction perpendicular to the first direction, and the first spacer is provided with a groove portion recessed from the peripheral surface and extending in a direction perpendicular to the first direction. Appendix 16. The semiconductor device according to Appendix 13, wherein the first semiconductor element is conductively joined to the third terminal. Appendix 17. The semiconductor device according to Appendix 16, further comprising a housing, wherein the first terminal, the second terminal, and the third terminal are supported by the housing, and wherein the housing is provided with a hollow portion containing the first flow path and the second flow path. Appendix 18. The semiconductor device according to Appendix 17, further comprising a third heat dissipation member connected to the third terminal, wherein the third heat dissipation member is located on the opposite side of the third terminal from the first semiconductor element, and the third heat dissipation member is housed in the hollow portion. Appendix 19. The semiconductor device according to claim 17, further comprising a conductive member conductively joined to the first terminal and the second terminal, the conductive member being housed in the hollow portion. 20. A vehicle comprising: a drive source; and the semiconductor device according to claim 11, the semiconductor device being electrically connected to the drive source.Appendix 21. The semiconductor device according to Appendix 2, wherein the first heat dissipation member extends in the first direction, and a cross-sectional size of the first heat dissipation member perpendicular to the first direction increases from the first terminal toward the second terminal. Appendix 22. The semiconductor device according to Appendix 6, wherein a cross-sectional size of the second engagement portion perpendicular to the first direction decreases from the second main portion toward the first main portion. Appendix 23. The semiconductor device according to Appendix 22, wherein at least a portion of each of the first engagement portion and the second engagement portion is defined by a curved surface. Appendix 24. The semiconductor device according to Appendix 13, wherein the first spacer has a first seat portion conductively bonded to the first semiconductor element, and a plurality of pillar portions located on the opposite side of the first semiconductor element with respect to the first seat portion in the first direction, the plurality of seats being spaced apart from one another in a direction perpendicular to the first direction, and each of the plurality of pillar portions being electrically connected to the first seat portion and conductively connected to the first terminal. Appendix 25. The semiconductor device according to Appendix 16, further comprising a second semiconductor element located on the opposite side of the second terminal from the first terminal, wherein the second terminal is electrically connected to the first terminal, and the second semiconductor element is conductively joined to the second terminal. Appendix 26. The semiconductor device according to Appendix 25, wherein the second semiconductor element overlaps the first semiconductor element when viewed in the first direction. Appendix 27. The semiconductor device according to Appendix 25, wherein the second semiconductor element is spaced apart from the first semiconductor element when viewed in the first direction. Appendix 28. The semiconductor device according to Appendix 25, further comprising a fourth terminal located on the opposite side of the second terminal from the second terminal, wherein a third flow path is provided between the second terminal and the fourth terminal in the first direction, and the second semiconductor element is accommodated in the third flow path. Appendix 29. The semiconductor device according to Appendix 28, wherein the fourth terminal is in contact with the third flow path. Appendix 30. 30. The semiconductor device according to claim 29, wherein the first semiconductor element is in contact with the second flow path, and the second semiconductor element is in contact with the third flow path.Appendix 31. The semiconductor device according to Appendix 29, further comprising a second spacer conductively bonded to the fourth terminal and the second semiconductor element, the second spacer being housed in the third flow path, and a dimension of the second spacer in the first direction being larger than a dimension of the second semiconductor element in the first direction. Appendix 32. The semiconductor device according to Appendix 16, further comprising a first signal terminal, the first semiconductor element having a first electrode and a second electrode positioned opposite each other in the first direction and a first gate electrode positioned on the same side as the first electrode in the first direction, the first electrode being conductively bonded to the first spacer, the second electrode being conductively bonded to the third terminal, and the first gate electrode being electrically connected to the first signal terminal. Appendix 33. The semiconductor device according to Appendix 17, wherein the housing has an inlet and an outlet each communicating with the hollow portion, the inlet and the outlet being positioned on opposite sides of the first heat dissipation member in a direction perpendicular to the first direction. Appendix 34. 34. The semiconductor device of claim 33, wherein the third terminal has a first exposed surface facing the opposite side to the side on which the first semiconductor element is located in the first direction, and the first exposed surface is exposed from the housing.

[0134] A10 to A100: semiconductor device B: vehicle 11: first terminal 111: first base 112: first extension 113: support 12: second terminal 121: second base 121A: second mounting surface 122: second extension 122A: pillow 123: second opening 13: third terminal 131: third base 131A: first mounting surface 131B: first exposed surface 132: third extension 133: first opening 14: fourth terminal 141: fourth base 141A: second exposed surface 142: fourth extension 15: conductive member 16: first signal terminal 161: inner part 162: outer part 17: second signal terminal 171: inner part 172: outer part 18: Third signal terminal 181: Inner part 182: Outer part 19: Fourth signal terminal 191: Inner part 192: Outer part 21: First semiconductor element 21A: First switching element 21B: First diode 211: First electrode 212: Second electrode 213: First gate electrode 22: Second semiconductor element 22A: Second switching element 22B: Second diode 221: Third electrode 222: Fourth electrode 223: Second gate electrode 29: Bonding layer 31: First heat dissipation member 311: First main part 312: First engaging part 32: Second heat dissipation member 321: Second main part 322: Second engaging part 33: Third heat dissipation member 34: Fourth heat dissipation member 40: Spacer 40A, 40B: First spacer, second spacer 41: Penetration portion 42: Peripheral surface 43: Groove portion 44: First seat portion 45: Pillar portion 46: Second seat portion 50: Housing 51: Top surface 52: Bottom surface 531-534: First to fourth side surfaces 54: Hollow portion 541-543: First to third flow paths 55: Inlet 56: Outlet 61-64: First to fourth leads 70: Refrigerant 81: On-board charger 82: Storage battery 83: Drive system 831: Inverter 832: Drive source z: First direction x: Second direction y: Third direction

Claims

1. A semiconductor device comprising: a first terminal; a second terminal located on one side of the first terminal in a first direction; a first semiconductor element located on the opposite side of the second terminal with respect to the first terminal and conductive to the first terminal; and a first heat dissipation member connected to the first terminal, wherein a first flow path is provided between the first terminal and the second terminal in the first direction, and the first heat dissipation member is contained in the first flow path.

2. The semiconductor device according to claim 1, wherein the first terminal and the second terminal are in contact with the first flow path.

3. The semiconductor device according to claim 2, wherein said first heat dissipation member is spaced apart from said second terminal.

4. The semiconductor device according to claim 3, further comprising a second heat dissipation member connected to said second terminal, said second heat dissipation member being accommodated in said first flow path.

5. The semiconductor device according to claim 4, wherein said second heat dissipation member is connected to said first heat dissipation member.

6. The semiconductor device described in claim 5, wherein the first heat dissipation member has a first main portion connected to the first terminal and a first engagement portion recessed from one side of the first main portion in the first direction, and the second heat dissipation member has a second main portion connected to the second terminal and a second engagement portion protruding from one side of the second main portion in the first direction, and the second engagement portion is inserted into the first engagement portion.

7. The semiconductor device according to claim 4, wherein the second heat dissipation member is spaced apart from the first heat dissipation member when viewed in the first direction.

8. The semiconductor device according to claim 7, wherein said second heat dissipation member is spaced apart from said first terminal.

9. The semiconductor device according to claim 2, wherein the first heat dissipation member is connected to the second terminal.

10. The semiconductor device according to claim 9, wherein at least one of the first terminal and the second terminal is provided with a support portion penetrating in the first direction, and a portion of the first heat dissipation member is inserted into the support portion.

11. A semiconductor device as described in any one of claims 2 to 10, further comprising a third terminal located on the opposite side of the first terminal with respect to the first semiconductor element, the first semiconductor element being conductive to the third terminal, a second flow path being provided between the first terminal and the third terminal in the first direction, and the first semiconductor element being accommodated in the second flow path.

12. The semiconductor device according to claim 11, wherein the third terminal is in contact with the second flow path.

13. The semiconductor device described in claim 12, further comprising a first spacer conductively connected to the first terminal and the first semiconductor element, the first spacer being accommodated in the second flow path, and the dimension of the first spacer in the first direction being greater than the dimension of the first semiconductor element in the first direction.

14. The semiconductor device according to claim 13, wherein the first spacer is provided with a through portion that passes through the first spacer in a direction perpendicular to the first direction.

15. The semiconductor device described in claim 13, wherein the first spacer has a peripheral surface facing a direction perpendicular to the first direction, and the first spacer is provided with a groove portion recessed from the peripheral surface and extending in a direction perpendicular to the first direction.

16. The semiconductor device according to claim 13, wherein the first semiconductor element is conductively connected to the third terminal.

17. The semiconductor device according to claim 16, further comprising a housing, the first terminal, the second terminal and the third terminal being supported by the housing, and the housing having a hollow portion including the first flow path and the second flow path.

18. The semiconductor device described in claim 17, further comprising a third heat dissipation member connected to the third terminal, the third heat dissipation member being located on the opposite side of the third terminal to the first semiconductor element, and the third heat dissipation member being housed in the hollow portion.

19. The semiconductor device according to claim 17, further comprising a conductive member conductively joined to said first terminal and said second terminal, said conductive member being housed in said hollow portion.

20. A vehicle comprising: a driving source; and the semiconductor device according to claim 11, wherein the semiconductor device is electrically connected to the driving source.

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