Multi-channel power amplification architecture, radio frequency generation device and communication system

Abstract

The present application belongs to the technical field of wireless communications. Provided in the embodiments of the present application are a multi-channel power amplification architecture, a radio frequency generation device and a communication system. The multi-channel power amplification architecture comprises a plurality of amplification circuits and a first multi-frequency power divider circuit; the plurality of amplification circuits are used for separately outputting first radio frequency signals and / or second radio frequency signals; the first multi-frequency power divider circuit comprises at least one microstrip line; the first multi-frequency power divider circuit performs power combining on multiple first radio frequency signals and / or second radio frequency signals on the basis of the impedance characteristic of the microstrip lines, and separately outputs power-combined signals of the first radio frequency signals and power-combined signals of the second radio frequency signals by means of a multi-frequency power dividing function. The embodiments of the present application implement power combining and multi-frequency power dividing on the basis of the multi-frequency power divider structure comprising the microstrip lines, so as to avoid design limitation, insertion loss and the like caused by bridge structures. The present embodiments facilitate design of large-bandwidth, large-backoff, high-efficiency and multi-frequency-band power amplifiers.

Description

A multi-channel power amplifier architecture, radio frequency generation device and communication system

[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office on November 9, 2023, with application number 202311492080.2 and application name “A multi-channel power amplification architecture, radio frequency generation equipment and communication system”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of wireless communication technology, and in particular to a multi-channel power amplification architecture, a radio frequency generation device, and a communication system. Background Art

[0003] In wireless communication applications, data information is carried on radio frequency (RF) signals through modulation techniques, and wireless communication between the transmitter and receiver is achieved by transmitting RF signals. To ensure communication quality, RF signals are typically amplified before transmission. However, with the advancement of wireless communication technology, RF modulation techniques have become increasingly complex, resulting in an increase in the peak-to-average ratio (PAR) of the output RF signals. To improve the efficiency of the output RF signals, power amplifiers must have a certain amount of power back-off.

[0004] As communication systems evolve toward higher speeds and lower latency, the bandwidth of communication signals continues to increase. Because communication signal frequency bands are fragmented, power amplifiers often need to be designed to operate concurrently across multiple frequency bands. Improving back-off efficiency and expanding operating bandwidth are conflicting requirements in power amplifier design, both of which present significant design challenges. Therefore, designing a power amplifier with high back-off, high efficiency, and a wide power bandwidth presents a significant challenge.

[0005] Summary of the Invention

[0006] The embodiments of the present application provide a multi-channel power amplification architecture, a radio frequency generation device, and a communication system, which realize a power amplification design with high back-off, high efficiency, and large power bandwidth.

[0007] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0008] In a first aspect, a multi-channel power amplification architecture is provided, comprising a first main amplifier circuit, a second main amplifier circuit, a first slave amplifier circuit, a second slave amplifier circuit, and a first inter-frequency power splitter circuit. The first inter-frequency power splitter circuit comprises at least one microstrip line. The output of the first main amplifier circuit, the output of the second main amplifier circuit, the output of the first slave amplifier circuit, and the output of the second slave amplifier circuit are respectively coupled to the first inter-frequency power splitter circuit. The output of the first main amplifier circuit is configured to output a first radio frequency signal; the output of the second main amplifier circuit is configured to output a second radio frequency signal. The first radio frequency signal and the second radio frequency signal have different frequencies. The output of the first slave amplifier circuit and the output of the second slave amplifier circuit are configured to output a combined radio frequency signal, which includes the first radio frequency signal and / or the second radio frequency signal. The first output of the first inter-frequency power splitter circuit is configured to assist in power synthesis of the first radio frequency signal. The second output of the first inter-frequency power splitter circuit is configured to assist in power synthesis of the second radio frequency signal.

[0009] In an embodiment of the present application, a first inter-frequency power splitting circuit is coupled to a first main amplifier circuit, a second main amplifier circuit, a first slave amplifier circuit, and a second slave amplifier circuit, respectively, to assist in power synthesis of a first RF signal and a second RF signal, and outputs the first and second RF synthesized signals based on the inter-frequency power splitting function. The first main amplifier circuit can power amplify RF signals in a first frequency band to obtain a first RF signal, and the second main amplifier circuit can power amplify RF signals in a second frequency band to obtain a second RF signal. The first slave amplifier circuit and the second slave amplifier circuit can power amplify RF signals in the first and / or second frequency bands to respectively obtain a RF synthesized signal that can include the first and / or second RF signals. The first inter-frequency power splitting circuit can distinguish the first and second RF signals based on the inter-frequency power splitting function, assist in power synthesis of the first RF signal output by the first main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit, and also assist in power synthesis of the second RF signal output by the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit. The multi-channel power amplification architecture of the present embodiment implements load pulling and inter-frequency power splitting based on a first inter-frequency power numerator circuit. This improves the freedom of architectural design while avoiding the design challenges associated with bridge impedance characteristics encountered when using a bridge for inter-frequency power splitting. Furthermore, microstrip lines reduce device area overhead and improve device integration.

[0010] In some possible implementations, the first inter-frequency power splitting circuit includes a first inter-frequency power molecular circuit, a second inter-frequency power molecular circuit, and a connecting microstrip line. The first inter-frequency power molecular circuit is coupled to the second inter-frequency power molecular circuit via the connecting microstrip line. The first inter-frequency power splitting circuit and the second inter-frequency power splitting circuit are connected in different ways to achieve different inter-frequency power splitting effects. Specifically, the following three connection relationships can be used as examples:

[0011] Example 1 of a connection relationship: The first end of the connecting microstrip line is coupled to the combining end of the first inter-frequency power molecular circuit, and the second end of the connecting microstrip line is coupled to the combining end of the second inter-frequency power molecular circuit. The output end of the first slave amplifier circuit is coupled to the combining end of the first inter-frequency power molecular circuit. The output end of the first master amplifier circuit is coupled to the first branch end of the first inter-frequency power molecular circuit, and the second branch end of the first inter-frequency power molecular circuit is the second output end of the first inter-frequency power branch circuit. The output end of the second slave amplifier circuit is coupled to the combining end of the second inter-frequency power molecular circuit. The output end of the second master amplifier circuit is coupled to the first branch end of the second inter-frequency power molecular circuit, and the second branch end of the second inter-frequency power molecular circuit is the first output end of the first inter-frequency power branch circuit.

[0012] Exemplarily, a first variable-frequency power molecular circuit includes a first microstrip line, a second microstrip line, a first isolation circuit, and a second isolation circuit. A second variable-frequency power molecular circuit includes a third microstrip line, a fourth microstrip line, a third isolation circuit, and a fourth isolation circuit. The first end of the first microstrip line and the first end of the second microstrip line are coupled to form a combining end of the first variable-frequency power molecular circuit; the second end of the first microstrip line serves as a first branching end of the first variable-frequency power molecular circuit; and the second end of the second microstrip line serves as a second branching end of the first variable-frequency power molecular circuit. The first end of the third microstrip line and the first end of the fourth microstrip line are coupled to form a combining end of the second variable-frequency power molecular circuit. The second end of the third microstrip line serves as a first branching end of the second variable-frequency power molecular circuit; and the second end of the fourth microstrip line serves as a second branching end of the second variable-frequency power molecular circuit. The first isolation circuit is coupled to the first branching end of the first variable-frequency power molecular circuit. The second isolation circuit is coupled to the second branching end of the first variable-frequency power molecular circuit. The third isolation circuit is coupled to the first branching end of the second variable-frequency power molecular circuit. The fourth isolation circuit is coupled to the second branching end of the second variable-frequency power molecular circuit. The first isolation circuit exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. The second isolation circuit exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. The third isolation circuit exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. The fourth isolation circuit exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal.

[0013] Connection relationship example 2: The first end of the microstrip line is coupled to the combining end of the first inter-frequency power molecular circuit, and the second end of the microstrip line is coupled to the combining end of the second inter-frequency power molecular circuit. The output end of the first slave amplifier circuit is coupled to the combining end of the first inter-frequency power molecular circuit. The output end of the first master amplifier circuit is coupled to the first branch end of the first inter-frequency power molecular circuit and serves as the first output end of the first inter-frequency power dividing circuit. The output end of the second slave amplifier circuit is coupled to the combining end of the second inter-frequency power molecular circuit. The output end of the second master amplifier circuit is coupled to the first branch end of the second inter-frequency power molecular circuit and serves as the second output end of the first inter-frequency power dividing circuit.

[0014] Exemplarily, the first inter-frequency power splitting circuit includes a fifth microstrip line, a sixth microstrip line, and a fifth isolation circuit. The second inter-frequency power splitting circuit includes a seventh microstrip line, an eighth microstrip line, and a sixth isolation circuit. The first end of the fifth microstrip line serves as the combining end of the first inter-frequency power splitting circuit, and the second end of the fifth microstrip line serves as the first branching end of the first inter-frequency power splitting circuit. The output of the first main amplifier circuit is coupled to the second end of the fifth microstrip line via the sixth microstrip line. The first end of the seventh microstrip line serves as the combining end of the second inter-frequency power splitting circuit, and the second end of the seventh microstrip line serves as the first branching end of the second inter-frequency power splitting circuit. The output of the second main amplifier circuit is coupled to the second end of the seventh microstrip line via the eighth microstrip line. The fifth isolation circuit is coupled to the first branching end of the first inter-frequency power splitting circuit. The sixth isolation circuit is coupled to the first branching end of the second inter-frequency power splitting circuit. The fifth isolation circuit exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. The sixth isolation circuit exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal.

[0015] Connection relationship example 3: The first branch end of the first inter-frequency power molecular circuit is coupled to the output end of the first main amplifier circuit, the second branch end of the first inter-frequency power molecular circuit is coupled to the output end of the second main amplifier circuit, the combining end of the first inter-frequency power molecular circuit and the output end of the first slave amplifier circuit are respectively coupled to the first end of the microstrip line. The combining end of the second inter-frequency power molecular circuit and the output end of the second slave amplifier circuit are respectively coupled to the second end of the microstrip line. The first branch end of the second inter-frequency power molecular circuit serves as the first output end of the first inter-frequency power splitter circuit, and the second branch end of the second inter-frequency power molecular circuit serves as the second output end of the first inter-frequency power splitter circuit.

[0016] Exemplarily, the first inter-frequency power splitting circuit includes a ninth microstrip line, a tenth microstrip line, a seventh isolation circuit, and an eighth isolation circuit. The second inter-frequency power splitting circuit includes an eleventh microstrip line, a twelfth microstrip line, a ninth isolation circuit, and a tenth isolation circuit. The first end of the ninth microstrip line serves as the first branch end of the first inter-frequency power module circuit. The second end of the ninth microstrip line and the second end of the tenth microstrip line, after coupling, serve as the combining end of the first inter-frequency power module circuit. The first end of the tenth microstrip line serves as the second branch end of the first inter-frequency power module circuit. The first end of the eleventh microstrip line serves as the first branch end of the second inter-frequency power module circuit. The second end of the eleventh microstrip line and the second end of the twelfth microstrip line, after coupling, serve as the combining end of the second inter-frequency power module circuit. The first end of the twelfth microstrip line serves as the second branch end of the second inter-frequency power module circuit. The seventh isolation circuit is coupled to the first branch end of the first inter-frequency power module circuit. The eighth isolation circuit is coupled to the second branch end of the first inter-frequency power module circuit. The ninth isolation circuit is coupled to the first branch end of the second inter-frequency power module circuit. The tenth isolation circuit is coupled to the second branch end of the second differential frequency power subcircuit. The seventh isolation circuit exhibits a short-circuit characteristic for the second radio frequency signal and an open-circuit characteristic for the first radio frequency signal. The eighth isolation circuit exhibits a short-circuit characteristic for the first radio frequency signal and an open-circuit characteristic for the second radio frequency signal. The ninth isolation circuit exhibits a short-circuit characteristic for the second radio frequency signal and an open-circuit characteristic for the first radio frequency signal. The tenth isolation circuit exhibits a short-circuit characteristic for the first radio frequency signal and an open-circuit characteristic for the second radio frequency signal.

[0017] For example, in the above-mentioned connection relationships 1, 2, and 3, the first inter-frequency power splitting circuit and / or the second inter-frequency power splitting circuit can also be a microstrip inter-frequency power splitting circuit. The microstrip inter-frequency power splitting circuit includes a twenty-third microstrip line, a twenty-fourth microstrip line, a twenty-fifth microstrip line, a twenty-sixth microstrip line, a twenty-seventh microstrip line, a twenty-eighth microstrip line, and a twenty-ninth microstrip line. The electrical length of the twenty-fourth microstrip line and the twenty-fifth microstrip line is one-quarter of the wavelength of the second radio frequency signal. The electrical length of the twenty-sixth microstrip line and the twenty-seventh microstrip line is one-quarter of the wavelength of the first radio frequency signal. The first end of the twenty-third microstrip line serves as a first branch end of the microstrip inter-frequency power splitting circuit, and the second end of the twenty-third microstrip line is coupled to the first end of the twenty-fourth microstrip line and the first end of the twenty-fifth microstrip line, respectively. The first end of the twenty-eighth microstrip line serves as a second branch end of the microstrip inter-frequency power splitting circuit, and the second end of the twenty-eighth microstrip line is coupled to the first end of the twenty-seventh microstrip line and the first end of the twenty-sixth microstrip line, respectively. The second end of the twenty-fifth microstrip line and the second end of the twenty-sixth microstrip line are respectively coupled to the first end of the twenty-ninth microstrip line, and the second end of the twenty-ninth microstrip line serves as a combining end of the microstrip different-frequency power splitter circuit.

[0018] In some possible implementations, the first inter-frequency power splitting circuit may be an inter-frequency power splitting structure based on a microstrip line and a coupling bridge structure. In this case, the first inter-frequency power splitting circuit includes a coupling bridge, a thirteenth microstrip line, a fourteenth microstrip line, a fifteenth microstrip line, a sixteenth microstrip line, a seventeenth microstrip line, an eighteenth microstrip line, an eleventh isolation circuit, a twelfth isolation circuit, a thirteenth isolation circuit, and a fourteenth isolation circuit. The first end of the thirteenth microstrip line and the first end of the fifteenth microstrip line are coupled to the output end of the first main amplifier circuit after being coupled with the eleventh isolation circuit, and the second end of the thirteenth microstrip line is coupled to the output end of the first slave amplifier circuit and the first end of the coupling bridge, respectively. The first end of the fourteenth microstrip line and the second end of the fifteenth microstrip line are coupled to the twelfth isolation circuit as the second output end of the first inter-frequency power splitting circuit, and the second end of the fourteenth microstrip line is coupled to the second end of the coupling bridge. The first end of the sixteenth microstrip line is coupled to the output end of the second slave amplifier circuit and the third end of the coupling bridge, respectively. The second end of the sixteenth microstrip line and the first end of the eighteenth microstrip line are coupled to the thirteenth isolation circuit and then coupled to the output end of the second master amplifier circuit. The first end of the seventeenth microstrip line is coupled to the fourth end of the coupling bridge. The second end of the seventeenth microstrip line and the second end of the eighteenth microstrip line are coupled to the fourteenth isolation circuit and then serve as the first output end of the first inter-frequency power splitter circuit. The eleventh isolation circuit exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. The twelfth isolation circuit exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. The thirteenth isolation circuit exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. The fourteenth isolation circuit exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. The first and third ends of the coupling bridge serve as isolation ends, and the first and second ends of the coupling bridge serve as direct-through ends.

[0019] Exemplarily, the coupling bridge includes a nineteenth microstrip line, a twentieth microstrip line, a twenty-first microstrip line, and a twenty-second microstrip line. The first end of the nineteenth microstrip line is coupled with the first end of the twentieth microstrip line to serve as the first end of the coupling bridge. The second end of the nineteenth microstrip line is coupled with the first end of the twenty-first microstrip line to serve as the second end of the coupling bridge. The second end of the twentieth microstrip line is coupled with the first end of the twenty-second microstrip line to serve as the third end of the coupling bridge. The second end of the twenty-first microstrip line is coupled with the second end of the twenty-second microstrip line to serve as the fourth end of the coupling bridge.

[0020] In the embodiment of the present application, based on the conversion of broadband signals into narrowband signals through heterodyne power splitting, the design requirements for the output isolation circuit are reduced, and a narrowband isolator can be used as the isolation circuit, avoiding the insertion loss and design difficulties brought by the broadband isolator.

[0021] In one possible implementation, the multi-channel power amplification architecture further includes a second inter-frequency power division circuit. The first output end of the first inter-frequency power division circuit is coupled to the first branch end of the second inter-frequency power division circuit, and the first output end of the first inter-frequency power division circuit is coupled to the second branch end of the second inter-frequency power division circuit. The combining end of the second inter-frequency power division circuit is used to output any one of the following signals: a first RF synthesized signal, a second RF synthesized signal, or a synthesized signal of the first RF synthesized signal and the second RF synthesized signal. In an embodiment of the present application, the multi-channel power amplification architecture can form a dual-frequency dual-output structure based on the first inter-frequency power division circuit, and can also form a dual-frequency single-output architecture based on the second inter-frequency power division circuit.

[0022] Exemplarily, the second inter-frequency power splitting circuit may be a traditional inter-frequency power splitter.

[0023] Exemplarily, the second inter-frequency power division circuit may also be a microstrip structure in the embodiments related to the first inter-frequency power division circuit and the second inter-frequency power division circuit, such as the structure described in the above-mentioned microstrip inter-frequency power division circuit.

[0024] In a possible implementation, at least one of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit is a power synthesis circuit; the power synthesis circuit includes a plurality of amplification branch circuits.

[0025] Exemplarily, the power synthesis circuit includes at least one of the following: a Doherty circuit, an inverse Doherty circuit, an asymmetric Doherty circuit, an LMBA circuit, an SLMBA circuit, a balun voltage-type synthesis circuit, a Chireix amplifier circuit, and an out-of-phase modulation amplifier circuit.

[0026] In the embodiment of the present application, based on converting the broadband signal into a narrowband signal through heterodyne power splitting, the difficulty of circuit design is reduced, and the architecture expansion design can be performed more easily, thereby obtaining a larger power back-off amount, etc.

[0027] In one possible embodiment, the multi-channel power amplification architecture further includes a shunt circuit and a first coupler. The shunt circuit is configured to input a first RF signal and a second RF signal, and output the first RF signal to the input end of the first master amplifier circuit and the first end of the first coupler, respectively, and output the second RF signal to the input end of the second master amplifier circuit and the third end of the first coupler, respectively. The second end of the first coupler and the fourth end of the first coupler are configured to output a combined RF signal to the input end of the first slave amplifier circuit and the input end of the second slave amplifier circuit, respectively.

[0028] Exemplarily, the branching circuit includes a first power divider and a second power divider. The combining end of the first power divider is used to input a first radio frequency signal; the first branching end and the second branching end of the first power divider are respectively used to output one channel of the first radio frequency signal. The combining end of the second power divider is used to input a second radio frequency signal. The first branching end and the second branching end of the second power divider are respectively used to output one channel of the second radio frequency signal.

[0029] Exemplarily, the branch circuit includes a first inter-frequency power splitter and a second inter-frequency power splitter. The combining end of the first inter-frequency power splitter is used to input a first RF signal and a second RF signal. The first branch end of the first inter-frequency power splitter outputs a first RF signal. The second branch end of the first inter-frequency power splitter outputs a second RF signal. The combining end of the second inter-frequency power splitter is used to input the first RF signal and the second RF signal. The first branch end of the second inter-frequency power splitter outputs the first RF signal. The second branch end of the second inter-frequency power splitter outputs the second RF signal.

[0030] In some examples, the first inter-frequency power divider and / or the second inter-frequency power divider may be an inter-frequency power divider circuit based on a microstrip line structure, or an inter-frequency power divider circuit with other circuit structures.

[0031] Exemplarily, the branch circuit includes a third inter-frequency power divider, a third power divider, and a fourth power divider. The first branch end and the second branch end of the third inter-frequency power divider are respectively coupled to the combining end of the third power divider and the combining end of the fourth power divider. The combining end of the third inter-frequency power divider is used to input a first radio frequency signal and a second radio frequency signal. The first branch end of the third inter-frequency power divider is used to output the first radio frequency signal. The second branch end of the third inter-frequency power divider is used to output the second radio frequency signal. The first branch end and the second branch end of the third power divider are respectively used to output one first radio frequency signal. The first branch end and the second branch end of the fourth power divider are respectively used to output one second radio frequency signal.

[0032] In some examples, the third inter-frequency power divider may be an inter-frequency power divider circuit based on a microstrip line structure, or an inter-frequency power divider circuit with other circuit structures.

[0033] In an embodiment of the present application, the shunt circuit and the first coupler can be combined to output radio frequency signals of corresponding frequency bands to the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit in different ways.

[0034] In one possible implementation, the first RF signal and / or the second RF signal include RF signals of at least one sub-band. In an embodiment of the present application, a RF signal with a relatively large bandwidth can be split into a plurality of first RF signals and second RF signals with relatively small bandwidths. The convergence of the impedance design is more friendly under a smaller relative bandwidth, and the efficiency of each amplification branch can be further improved, thereby improving the fallback efficiency and full-load efficiency of the multi-channel power amplification architecture. In addition, splitting the traditional wide-band main amplifier circuit into a plurality of RF signals with relatively small bandwidths can avoid the problem of difficult VBW design in concurrent scenarios and will not cause deterioration of concurrent performance.

[0035] In one possible implementation, the minimum operating power point of the first master amplifier circuit is less than the minimum operating power point of the first slave amplifier circuit and the minimum operating power point of the second slave amplifier circuit; the minimum operating power point of the second master amplifier circuit is less than the minimum operating power point of the first slave amplifier circuit and the minimum operating power point of the second slave amplifier circuit; and the minimum operating power point of the first slave amplifier circuit is less than, equal to, or greater than the minimum operating power point of the second slave amplifier circuit. In this embodiment of the present application, the activation order of the slave amplifier circuits is not limited and can be adjusted according to actual applications.

[0036] In a possible implementation, the multi-channel power amplifier architecture further includes a driving circuit or a control circuit, and the minimum operating power points of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit are controlled based on the driving circuit or the control circuit. In an embodiment of the present application, since the first slave amplifier circuit and the second slave amplifier circuit under the same architecture may also have a reversed start-up order (for example, under an architecture, for a radio frequency signal of a first frequency band, the first slave amplifier circuit may start working before the second slave amplifier circuit, but for a radio frequency signal of a second frequency band, the second slave amplifier circuit may start working before the first slave amplifier circuit), the minimum operating power points of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit may be controlled by a driving circuit or a control circuit in the digital domain to achieve control of the start-up order.

[0037] In one possible implementation, at least one of the multiple microstrip lines is a microstrip line with a three-dimensional stacked structure. Exemplarily, the microstrip line may be a suspended microstrip line. In the embodiments of the present application, the three-dimensional stacked microstrip line maintains the same performance as a conventional microstrip line, but its area is significantly smaller. The three-dimensional stacked microstrip line structure can reduce the area overhead of a multi-channel power amplifier architecture.

[0038] In a second aspect, embodiments of the present application further provide a radio frequency generation device, comprising a radio frequency generation circuit and the multi-channel power amplification architecture described in the first aspect. The radio frequency generation circuit is configured to output radio frequency signals to the multi-channel power amplification architecture. The power amplifier is configured to perform power synthesis amplification based on the radio frequency signals.

[0039] In a third aspect, embodiments of the present application further provide a communication system comprising a baseband processing device and the RF generation device described in the second aspect. The baseband processing device is configured to output a baseband signal to the RF generation device. The RF generation device is configured to derive a RF signal from the baseband signal and perform power synthesis amplification on the RF signal.

[0040] Regarding the technical principles and beneficial effects of the second and third aspects, please refer to the relevant description of the first aspect mentioned above and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] FIG1 is a schematic diagram of the structure of a power amplifier;

[0042] FIG2 is a schematic diagram of the structure of a communication system provided in an embodiment of the present application;

[0043] FIG3 is a schematic structural diagram of a radio frequency generating device provided in an embodiment of the present application;

[0044] FIG4 is a schematic structural diagram of a first multi-channel power amplification architecture provided in an embodiment of the present application;

[0045] FIG5 is a schematic structural diagram of another first multi-channel power amplification architecture provided in an embodiment of the present application;

[0046] FIG6 is a schematic structural diagram of a second multi-channel power amplification architecture provided in an embodiment of the present application;

[0047] FIG7 is a schematic structural diagram of a third multi-channel power amplification architecture provided in an embodiment of the present application;

[0048] FIG8 is a schematic structural diagram of a fourth multi-channel power amplification architecture provided in an embodiment of the present application;

[0049] FIG9 is a schematic structural diagram of a fifth multi-channel power amplification architecture provided in an embodiment of the present application;

[0050] FIG10 is a first structural diagram of a sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0051] FIG11 is a second structural diagram of another sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0052] FIG12 is a third structural diagram of a sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0053] FIG13 is a schematic diagram of a frequency-division equivalent structure of a sixth multi-channel power amplification architecture described in FIG12 according to an embodiment of the present application;

[0054] FIG14 is a schematic diagram of efficiency-power back-off in the first frequency band of the sixth multi-channel power amplification architecture described in FIG11 and FIG12 according to an embodiment of the present application;

[0055] FIG15 is a schematic diagram showing a voltage-power backoff response relationship of a sixth multi-channel power amplification architecture in a first frequency band as described in FIG11 and FIG12 according to an embodiment of the present application;

[0056] FIG16 is a schematic diagram showing a phase-power backoff response relationship of a sixth multi-channel power amplification architecture in a first frequency band as described in FIG11 and FIG12 according to an embodiment of the present application;

[0057] FIG17 is a schematic diagram of efficiency-power back-off in the second frequency band of the sixth multi-channel power amplification architecture described in FIG11 and FIG12 according to an embodiment of the present application;

[0058] FIG18 is a schematic diagram showing a voltage-power backoff response relationship of the sixth multi-channel power amplification architecture in the second frequency band as described in FIG11 and FIG12 according to an embodiment of the present application;

[0059] FIG19 is a schematic diagram showing a phase-power backoff response relationship of the sixth multi-channel power amplification architecture in the second frequency band as described in FIG11 and FIG12 , according to an embodiment of the present application;

[0060] FIG20 is a fourth structural diagram of a sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0061] FIG21 is a fifth structural diagram of a sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0062] FIG22 is a schematic diagram of a frequency-division equivalent structure of a sixth multi-channel power amplification architecture described in FIG21 according to an embodiment of the present application;

[0063] FIG23 is a schematic diagram of efficiency-power back-off in the first frequency band of the sixth multi-channel power amplification architecture described in FIG20 and FIG21 according to an embodiment of the present application;

[0064] FIG24 is a schematic diagram showing a relationship between voltage-power back-off response changes in the first frequency band of the sixth multi-channel power amplification architecture described in FIG20 and FIG21 according to an embodiment of the present application;

[0065] FIG25 is a schematic diagram showing a relationship between phase-power backoff response changes in the first frequency band of the sixth multi-channel power amplification architecture described in FIG20 and FIG21 according to an embodiment of the present application;

[0066] FIG26 is a schematic diagram of efficiency-power back-off in the second frequency band of the sixth multi-channel power amplification architecture described in FIG20 and FIG21 according to an embodiment of the present application;

[0067] FIG27 is a schematic diagram showing a relationship between voltage and power backoff response of the sixth multi-channel power amplification architecture in the second frequency band as described in FIG20 and FIG21 according to an embodiment of the present application;

[0068] FIG28 is a schematic diagram showing a relationship between phase-power backoff response changes in the second frequency band of the sixth multi-channel power amplification architecture described in FIG20 and FIG21 according to an embodiment of the present application;

[0069] FIG29 is a sixth structural diagram of another sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0070] FIG30 is a seventh structural diagram of a sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0071] FIG31 is a schematic diagram of efficiency-power back-off in the first frequency band of the sixth multi-channel power amplification architecture described in FIG29 and FIG30 according to an embodiment of the present application;

[0072] FIG32 is a schematic diagram showing a relationship between voltage and power backoff response of the sixth multi-channel power amplification architecture in the first frequency band as described in FIG29 and FIG30 according to an embodiment of the present application;

[0073] FIG33 is a schematic diagram showing a relationship between phase-power backoff response changes in the first frequency band of the sixth multi-channel power amplification architecture as described in FIG29 and FIG30 , according to an embodiment of the present application;

[0074] FIG34 is a schematic diagram of efficiency-power back-off in the second frequency band of the sixth multi-channel power amplification architecture described in FIG29 and FIG30 according to an embodiment of the present application;

[0075] FIG35 is a schematic diagram showing a relationship between voltage and power backoff response of the sixth multi-channel power amplification architecture in the second frequency band as described in FIG29 and FIG30 according to an embodiment of the present application;

[0076] FIG36 is a schematic diagram showing a relationship between phase-power backoff response changes in the second frequency band of the sixth multi-channel power amplification architecture described in FIG29 and FIG30 according to an embodiment of the present application;

[0077] FIG37 is a schematic structural diagram of a microstrip inter-frequency power splitter circuit provided in an embodiment of the present application;

[0078] FIG38 is a structural diagram eight of another sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0079] FIG39 is a ninth structural diagram of a sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0080] FIG40 is a schematic diagram of a frequency division equivalent structure of the sixth multi-channel power amplification architecture as shown in FIG39 , provided in an embodiment of the present application;

[0081] FIG41 is a schematic diagram of efficiency-power back-off in the first frequency band of the sixth multi-channel power amplification architecture described in FIG38 and FIG39 according to an embodiment of the present application;

[0082] FIG42 is a schematic diagram showing a relationship between voltage and power backoff response of the sixth multi-channel power amplification architecture in the first frequency band as described in FIG38 and FIG39 according to an embodiment of the present application;

[0083] FIG43 is a schematic diagram showing a relationship between phase-power backoff response changes in the first frequency band of the sixth multi-channel power amplification architecture as described in FIG38 and FIG39 , according to an embodiment of the present application;

[0084] FIG44 is a schematic diagram showing the efficiency-power back-off of the sixth multi-channel power amplification architecture in the second frequency band as described in FIG38 and FIG39 , according to an embodiment of the present application;

[0085] FIG45 is a schematic diagram showing a relationship between voltage and power backoff response of the sixth multi-channel power amplification architecture in the second frequency band as described in FIG38 and FIG39 according to an embodiment of the present application;

[0086] FIG46 is a schematic diagram showing a relationship between phase-power backoff response changes in the second frequency band of the sixth multi-channel power amplification architecture as described in FIG38 and FIG39 , according to an embodiment of the present application;

[0087] FIG47 is a structural diagram 10 of a sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0088] FIG48 is a structural diagram eleven of a sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0089] FIG49 is a structural diagram 12 of a sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0090] FIG50 is a structural diagram 13 of a sixth multi-channel power amplification architecture provided in an embodiment of the present application;

[0091] Figure 51 is a structural schematic diagram fourteen of another sixth multi-channel power amplification architecture provided in an embodiment of the present application. DETAILED DESCRIPTION

[0092] It should be noted that the terms "first", "second", etc. involved in the embodiments of the present application are only used to distinguish features of the same type and cannot be understood as indicating relative importance, quantity, order, etc.

[0093] The terms "exemplary" or "for example" in the embodiments of this application are used to indicate examples, illustrations, or descriptions. Any embodiment or design described in this application as "exemplary" or "for example" should not be construed as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0094] The terms "coupling" and "connection" involved in the embodiments of this application should be understood in a broad sense. For example, they may refer to a physical direct connection, or an indirect connection achieved through electronic devices, such as a connection achieved through resistors, inductors, capacitors, microstrip lines, impedance transformation lines, impedance inversion lines, filters or other electronic devices.

[0095] First, some basic concepts involved in the embodiments of this application are explained:

[0096] Power amplifier: Power amplifiers can be divided into power tube type power amplifiers and switch type power amplifiers. Power tube type power amplifiers can be further divided into Class A power amplifiers, Class B power amplifiers, Class AB power amplifiers and Class C power amplifiers. Among them, Class A power amplifiers, Class B power amplifiers and Class AB power amplifiers are linear power amplifiers. Class C power amplifiers are nonlinear power amplifiers. In the embodiment of the present application, for Class C power amplifiers, we can also divide the degree of Class C according to the different minimum turn-on operating power points of the Class C power amplifiers, for example, into: shallow Class C, Class C, deep Class C. This type of division is only used in the embodiment of the present application to indicate that between multiple Class C power amplifiers, the minimum turn-on operating power points for turn-on operation are different according to the differences in the power tube gate voltage configuration. Class A power amplifiers have the best linearity and are suitable for power amplification of small-signal DC signals. Class B power amplifiers operate in half cycles. Single-ended Class B power amplifiers will produce a lot of nonlinear distortion. They are rarely used for power amplification of RF signals. Usually, a push-pull structure based on two Class B power amplifiers forms a positive half cycle and a negative half cycle, which is used for power amplification of audio signals. A class AB power amplifier is a combination of a class A power amplifier and a class B power amplifier. The efficiency and linearity of a class AB power amplifier are between those of a class A power amplifier and a class B power amplifier, and it is widely used in the power amplification of radio frequency signals. Class C power amplifiers are nonlinear and are often used in multi-channel power amplifier structures for power synthesis. As shown in Figure 1, the basic structure of a single power tube type power amplifier is shown. In the figure, a gate bias circuit P1 is provided at the gate of the amplifier power tube M, and a drain bias circuit P2 is provided at the drain of the amplifier power tube M. The bias state between the poles of the amplifier power tube M is controlled by the gate bias circuit P1 and the drain bias circuit P2, so that the amplifier power tube M is in a power amplification state. The amplifier power tube M in the power amplification state can power amplify the input signal.

[0097] Power Amplifier Back-off: With the advancement of wireless communication technology, RF signal modulation techniques have become increasingly complex, increasing the peak-to-average power ratio (PAPR) of the output RF signal. The RF signal input to the power amplifier is a modulated signal obtained by modulating data information onto a carrier signal. The amount of power back-off is related to the PAPR of the modulated signal.

[0098] Power amplifier efficiency: The efficiency of a power amplifier can be measured by the drain efficiency of the power transistor M. This refers to the ratio of the system's drain DC current converted to the RF signal actually output by the power amplifier. The efficiency of a power amplifier decreases as the output power decreases.

[0099] An embodiment of the present application provides a communication system. As shown in FIG2 , the communication system 10000 includes a baseband processing device 1000 and a radio frequency generation device 2000. The baseband processing device 1000 is coupled to the radio frequency generation device 2000. The baseband processing device 1000 is configured to output a baseband signal to the radio frequency generation device 2000. The radio frequency generation device 2000 is configured to derive a radio frequency signal from the baseband signal and perform power synthesis amplification on the radio frequency signal.

[0100] As shown in Figure 3, RF generation device 2000 includes RF generation circuit 100 and multi-channel power amplifier architecture 200. The output of RF generation circuit 100 is coupled to multi-channel power amplifier architecture 200. RF generation circuit 100 is configured to output RF signals to multi-channel power amplifier architecture 200, which in turn performs power synthesis and amplification based on the RF signals.

[0101] For example, the radio frequency generation device 2000 may be a remote radio unit (RRU) or an active antenna unit (AAU), etc. The baseband processing device 1000 may be a building base band unit (BBU), etc.

[0102] With the advancement of wireless communication technology, the amount of data and information required to be carried by RF signals has rapidly increased. This has led to an increase in the bandwidth requirements for RF signals. To ensure the efficiency of high-peak-to-average ratio RF signal amplification, it is necessary to maximize power back-off. The power amplifier (PA) consumes the most power in the transmitter, and maintaining high efficiency under conditions of significant power back-off is a major challenge. Furthermore, in PA design, improving back-off efficiency and expanding operating bandwidth are conflicting requirements, both of which present significant design challenges. Designing high-power, wide-bandwidth, high-back-off, and high-efficiency PAs has always been a challenge in the industry, primarily due to the following difficulties: First, from the perspective of high-efficiency PA design, improving back-off efficiency and expanding operating bandwidth are in conflict. Most PA architectures require a balance between bandwidth and efficiency, making it difficult to achieve the desired efficiency. Second, from the perspective of high-power PA design, the PA's power transistors have smaller matching impedances and greater parasitic parameters, which can significantly impact the design solution. Difficulty 3: From the perspective of designing wideband, multi-band power amplifiers, video bandwidth (VBW) is a key factor affecting broadband concurrency, and controlling the VBW of wideband amplifiers presents significant design challenges. Difficulty 4: The output of the power amplifier in a base station requires an isolator to protect the amplifier's performance from downstream impedance mismatches. The performance of the output isolator of a high-power, wideband amplifier significantly impacts output insertion loss, linearity, and other performance characteristics.

[0103] In some possible implementations, the multi-channel power amplifier architecture 200 can be a first power amplifier of a Doherty architecture. As shown in FIG4 , the first multi-channel power amplifier architecture 200A includes a main amplifier branch 210A, a slave amplifier branch 220A, an impedance inversion line 230A, and an impedance transformation line 240A. The main amplifier branch 210A operates in Class B or Class AB, and the slave amplifier branch 220A operates in Class C. When the signal power of the input RF signal is low, the main amplifier branch 210A is turned on to operate. When the signal power of the input RF signal is high, the slave amplifier branch 220A is turned on to operate. When the slave amplifier branch 220A is turned on, the impedance of the junction between the main amplifier branch 210A and the slave amplifier branch 220A is inverted with the impedance of the main amplifier branch 210A through the impedance inversion line 230A, thereby achieving power synthesis of the RF signals output by the two branches under load pull, and impedance matching is performed based on the impedance transformation line 240A. The Doherty architecture shown in FIG4 and its variant architecture can maintain good power back-off and working efficiency in single-frequency or dual-frequency signal amplification. For a traditional two-way Doherty amplifier, increasing the power ratio of the auxiliary amplifier and the main amplifier can increase the back-off to a certain extent, but the efficiency gap between the back-off power point and the saturation power point is not conducive to the overall efficiency of the modulated signal. Therefore, the two-way Doherty architecture shown in FIG4 can be expanded to a three-way Doherty architecture. As shown in FIG5(a) and FIG5(b), there are two different forms of Doherty architecture. In the three-way Doherty architecture, two slave amplification branches 220A are included, wherein one slave amplification branch 220A operates in shallow Class C and the other slave amplification branch 220A operates in deep Class C, that is, the minimum operating power point of the shallow Class C slave amplification branch 220A is lower than the minimum operating power point of the deep Class C slave amplification branch 220A. The three-way Doherty architecture can fill the efficiency gap while increasing the back-off. However, in the traditional three-way Doherty architecture shown in Figure 5 (a), the main amplifier branch 210A has only one impedance pulling process, and its load-pull ratio (LPR) is relatively small. In the improved three-way Doherty architecture shown in Figure 5 (b), the main amplifier branch 210A can achieve two load pulling processes to achieve a relatively large LPR. Since the main amplifier branch 210A is load-pulled twice, its power fallback range will also be relatively large. However, if you want to expand the fallback amount in the architectures shown in Figures 4 and 5, you need to increase the number of impedance inversion lines 230A and slave amplifier branches 220A, which increases the device cost and device area of ​​the first multi-way power amplifier architecture 100A. And when the number of slave amplifier branches 220A reaches a certain level, the amplification gain coefficient of the first multi-way power amplifier architecture 100A will decrease.Furthermore, the impedance inversion line 230A has a certain frequency response, which limits the bandwidth and makes it extremely difficult for engineers to achieve broadband design in the first multi-channel power amplifier architecture 100A. For example, in the two three-channel Doherty architectures shown in Figure 5, as the number of branches increases, the impedance inversion line 230A also increases, which significantly limits the operating bandwidth. Therefore, how to achieve improved operating bandwidth and performance in three-channel Doherty architectures and power amplifier architectures with more than three channels is a major challenge.

[0104] In some possible implementations, the multi-channel power amplifier architecture 200 can be a second power amplifier based on a load modulated balanced amplifier (LMBA) architecture or a sequential load modulated balanced amplifier (SLMBA) architecture. As shown in FIG6 , the second multi-channel power amplifier architecture 200B may include two balanced couplers 210B, two balanced amplifier circuits 220B, and a control amplifier circuit 230B. The third and fourth ends of the front-stage balanced coupler 210B are respectively coupled to the input ends of the two balanced amplifier circuits 220B, and are coupled to the first and second ends of the rear-stage balanced coupler 210B through the output ends of the two balanced amplifier circuits 220B. The output end of the control amplifier circuit 230B is coupled to the third end of the rear-stage balanced coupler 210B. The fourth end of the rear-stage balanced coupler 210B serves as the output end of the second multi-channel power amplifier architecture 200B. In some examples, the two balanced amplifier circuits 220B are master amplifiers operating in class AB, and the control amplifier circuit 230B is a slave amplifier operating in class C. In this case, the second multi-channel power amplifier architecture 200B is a power amplifier based on LMBA. In some examples, the two balanced amplifier circuits 220B are slave amplifiers operating in class C, and the control amplifier circuit 230B is a master amplifier operating in class AB. In this case, the second multi-channel power amplifier architecture 200B is a power amplifier based on SLMBA. In the embodiment shown in Figure 6, the third and fourth ends of the balanced coupler 210B of the front stage output two RF signals with a phase difference of 90°. The two RF signals are power amplified by the balanced amplifier circuit 220B and then output to the balanced coupler 210B of the back stage. The RF signal output by the control amplifier circuit 230B coupled to the balanced coupler 210B of the subsequent stage can control the balanced coupler 210B of the subsequent stage to adjust the amplitude and phase of the three RF signals, so that each frequency band can obtain the best load pulling effect, and output the power-synthesized RF signal from the fourth end of the balanced coupler 210B of the subsequent stage. However, in the design of the scheme shown in Figure 6, first, in order to meet the current base station needs, a power ratio scheme in which the working power of the slave amplifier is higher than the working power of the master amplifier is often used, and the efficiency pit problem caused by this cannot be ignored. Second, VBW control is very difficult in broadband scenarios, and in concurrent scenarios, the problem of deterioration of its power, efficiency, and linear performance still exists. Third, the balanced coupler is used as the output power synthesis unit in the architecture, and its power capacity is a major challenge in the current high-power power amplifier design. Fourth, it is difficult to achieve good performance with a broadband isolator connected to the output of a single-output power amplifier solution.

[0105] In some possible implementations, the multi-channel power amplifier architecture 200 can be a third multi-channel power amplifier architecture based on a dual-band, single-output Doherty architecture with slave sharing. As shown in FIG7 , the third multi-channel power amplifier architecture 200C includes a first single-frequency main amplifier circuit PA1, a second single-frequency main amplifier circuit PA2, a dual-band shared slave amplifier circuit PA3, a first impedance inverter network INV1, and a second impedance transformation network INV2. The first single-frequency main amplifier circuit PA1 operates in Class AB and is used to power amplify RF signals in a first frequency band. The second single-frequency main amplifier circuit PA2 operates in Class AB and is used to power amplify RF signals in a second frequency band. The dual-band shared slave amplifier circuit PA3 operates in Class C and is used to power amplify RF signals in both the first and second frequency bands. The output of the first single-frequency main amplifier circuit PA1 and the output of the second single-frequency main amplifier circuit PA2 are each coupled to the output of the dual-band shared slave amplifier circuit PA3 via a first impedance inverter network INV1, and then coupled to the second impedance transformation network INV2. Among them, the first single-frequency main amplifier circuit PA1 and the dual-frequency shared slave amplifier circuit PA3 can form a Doherty architecture for the first frequency band through the corresponding first impedance inverter network INV1 and the second impedance conversion network INV2. The second single-frequency main amplifier circuit PA2 and the dual-frequency shared slave amplifier circuit PA3 can form a Doherty architecture for the second frequency band through the corresponding first impedance inverter network INV1 and the second impedance conversion network INV2. The embodiment of the present application can avoid the problem of the main path entering the saturation zone prematurely due to the interaction of concurrent signals in the concurrent scenario through the third multi-channel power amplifier architecture 200C as shown in Figure 7, and solves the saturation power, efficiency and linear deterioration problems of the concurrent scenario. However, in the design of high-power broadband power amplifiers, the open-circuit characteristics of the slave amplifier circuit will add great difficulty to the design. In addition, the output of the broadband single-output solution needs to be connected to a broadband isolator, and the current design of broadband isolators is difficult to achieve good performance.

[0106] In some possible implementations, the multi-channel power amplifier architecture 200 can be a fourth multi-channel power amplifier architecture based on a dual-band, dual-output Doherty architecture with slave sharing. As shown in FIG8 , the fourth multi-channel power amplifier architecture 200D includes a first single-frequency main amplifier circuit PA1, a second single-frequency main amplifier circuit PA2, a dual-band shared slave amplifier circuit PA3, two first impedance inversion networks INV1, two second impedance variation networks INV2, a front-stage inter-frequency power splitter F1, and a rear-stage inter-frequency power splitter F2. The first single-frequency main amplifier circuit PA1 and the second single-frequency main amplifier circuit PA2 each operate in Class AB, while the dual-band shared slave amplifier circuit PA3 operates in Class C. The two branch terminals of the front-stage inter-frequency power splitter F1 respectively input RF signals of the first and second frequency bands, while the combining terminal of the front-stage inter-frequency power splitter F1 outputs RF signals of the first and second frequency bands to the input terminal of the dual-band shared slave amplifier circuit PA3. The dual-band shared slave amplifier circuit PA3 outputs the amplified RF signals in the first and second frequency bands to the combining end of the subsequent inter-frequency power splitter F2. The outputs of the first and second single-frequency main amplifier circuits PA1 and PA2 are each coupled to a first impedance inverter network INV1, and then coupled to the two branch ends of the subsequent inter-frequency power splitter F2 through the corresponding first impedance inverter network INV1. One branch end of the subsequent inter-frequency power splitter F2 outputs the RF signal in the first frequency band to the first impedance inverter network INV1 corresponding to the first single-frequency main amplifier circuit PA1, where it forms a Doherty architecture with the corresponding second impedance transformation network INV2 for power combination of the RF signal in the first frequency band. The other branch end of the subsequent inter-frequency power splitter F2 outputs the RF signal in the second frequency band to the first impedance inverter network INV1 corresponding to the second single-frequency main amplifier circuit PA2, where it forms a Doherty architecture with the corresponding second impedance transformation network INV2 for power combination of the RF signal in the second frequency band. In the embodiment of the present application, a heterodyne power divider is used in the architecture shown in FIG8 to realize dual output from different frequency bands of the amplifier circuit. In this broadband dual-output solution, the power amplifier output signal in the communication system can be connected to the antenna using two narrowband isolators, reducing the impact of the broadband isolator on the link performance. However, in this architecture, the heterodyne power divider must not only meet the heterodyne power division characteristics, but also participate in the load pulling of the radio frequency signals in the two frequency bands, which increases the design difficulty. At the same time, its insertion loss will also cause the performance of the solution to deteriorate, making the design more difficult. In addition, the open-circuit characteristic problem of the amplifier circuit is still a design difficulty. In addition, under this architecture, each frequency band can only be equivalent to a two-way Doherty architecture, there are only two power saturation points, and the power back-off amount is small.

[0107] In some possible implementations, the multi-channel power amplifier architecture 200 can be a fifth multi-channel power amplifier architecture that implements a dual-band, dual-output Doherty architecture with inter-frequency power splitting based on a bridge. As shown in FIG9 , the fifth multi-channel power amplifier architecture 200E includes a first single-frequency main amplifier circuit PA1, a second single-frequency main amplifier circuit PA2, a first dual-band shared slave amplifier circuit PA3, a second dual-band shared slave amplifier circuit PA4, two first impedance inversion networks INV1, a first bridge B1, and a second bridge B2. The first and third ends of the first bridge B1 are configured to input RF signals in the first and second frequency bands. The second and third ends of the first bridge B1 respectively transmit the combined RF signals of the first and second frequency bands to the inputs of the first and second dual-band shared slave amplifier circuits PA3 and PA4. The outputs of the first and second dual-band shared slave amplifier circuits PA3 and PA4 are coupled to the first and third ends of the second bridge B2, respectively. The input of the first single-frequency main amplifier circuit PA1 is configured to input RF signals in the first frequency band. The output end of the first single-frequency main amplifier circuit PA1 is coupled to the second end of the second bridge B2 via a corresponding first impedance inversion network to perform power synthesis in the first frequency band. The input end of the second single-frequency main amplifier circuit PA2 is used to input a radio frequency signal in the second frequency band. The output end of the second single-frequency main amplifier circuit PA2 is coupled to the fourth end of the second bridge B2 via a corresponding first impedance inversion network INV1 to perform power synthesis in the second frequency band. In the fifth multi-channel power amplifier architecture 200E shown in FIG9 , the phase characteristics of the second bridge B2 combined with the isolation circuit can achieve the function of frequency-differential power division, thereby outputting radio frequency signals of different frequency bands from the second and fourth ends of the second bridge B2. The radio frequency signals of different frequency bands can then be power synthesized with the first single-frequency main amplifier circuit PA1 or the second single-frequency main amplifier circuit PA2 to obtain a power-synthesized radio frequency signal in the first frequency band or a power-synthesized radio frequency signal in the second frequency band. However, in the embodiment shown in FIG9 , the insertion loss of the bridge itself is relatively large, which affects the overall performance of the power amplifier. At the same time, the large size of the bridge is not conducive to the miniaturization and integration of power amplifier components. In addition, the characteristic impedance design of the bridge is relatively fixed and can only be designed according to a certain characteristic impedance. This will limit the design freedom of the power amplifier matching circuit, greatly increasing the design and application difficulty in the multi-channel amplifier architecture.

[0108] In order to reduce the design difficulty of a power amplifier with high back-off, high efficiency, and large power bandwidth, in some possible embodiments, as shown in FIG10 , a sixth multi-channel power amplification architecture 200F includes a first main amplifier circuit 210F, a second main amplifier circuit 220F, a first slave amplifier circuit 230F, a second slave amplifier circuit 240F, and a first inter-frequency power splitter circuit 250F. The first inter-frequency power splitter circuit 250F includes at least one microstrip line. The output end of the first main amplifier circuit 210F, the output end of the second main amplifier circuit 220F, the output end of the first slave amplifier circuit 230F, and the output end of the second slave amplifier circuit 240F are respectively coupled to the first inter-frequency power splitter circuit 250F. Wherein:

[0109] The output of the first master amplifier circuit 210F is configured to output a first RF signal. The output of the second master amplifier circuit 220F is configured to output a second RF signal. The outputs of the first slave amplifier circuit 230F and the second slave amplifier circuit 240F are configured to output a combined RF signal, which includes the first RF signal and the second RF signal. The first output of the first inter-frequency power splitter circuit 250F is configured to output the power combination of the first RF signal. The second output of the first inter-frequency power splitter circuit 250F is configured to output the power combination of the second RF signal.

[0110] In the embodiment of the present application as shown in FIG10 , inter-frequency power division is not performed based on a bridge, but rather on a first inter-frequency power division circuit 250F having inter-frequency power division functionality. The first inter-frequency power division circuit 250F is coupled to a first master amplifier circuit 210F, a second master amplifier circuit 220F, a first slave amplifier circuit 230F, and a second slave amplifier circuit 240F, respectively. The first master amplifier circuit 210F can amplify RF signals in a first frequency band to obtain a first RF signal, and the second master amplifier circuit 220F can amplify RF signals in a second frequency band to obtain a second RF signal. The first slave amplifier circuit 230F and the second slave amplifier circuit 240F can amplify RF signals in the first frequency band and / or the second frequency band to obtain a composite RF signal that can include the first RF signal and / or the second RF signal, respectively. The first inter-frequency power division circuit 250F can distinguish the first RF signal from the second RF signal based on the inter-frequency power division function, and can realize power synthesis of the first RF signal output by the first main amplifier circuit 210F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F based on the impedance characteristics of the microstrip line. It can also realize power synthesis of the second RF signal output by the second main amplifier circuit 220F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F.

[0111] In some possible implementations, two inter-frequency power molecular circuits may be used in the first inter-frequency power splitting circuit 250F, both of which are used to perform inter-frequency power splitting on the first RF signal and the second RF signal. In this case, the first inter-frequency power splitting circuit 250F may include a connecting microstrip line, a first inter-frequency power molecular circuit, and a second inter-frequency power molecular circuit. The first inter-frequency power molecular circuit is coupled to the second inter-frequency power molecular circuit via the connecting microstrip line. In this architecture, the first inter-frequency power molecular circuit and the second inter-frequency power molecular circuit have different connection methods, which can result in different inter-frequency power splitting methods. The following examples are provided as examples:

[0112] Example 1 of the connection relationship between the first and second inter-frequency power molecular circuits: As shown in Figure 11, the first end of the microstrip line LL is coupled to the combining end of the first inter-frequency power molecular circuit 251F, and the second end of the microstrip line LL is coupled to the combining end of the second inter-frequency power molecular circuit 252F. The output of the first slave amplifier circuit 230F is coupled to the combining end of the first inter-frequency power molecular circuit 251F. The output of the first master amplifier circuit 210F is coupled to the first branch end of the first inter-frequency power molecular circuit 251F, and the second branch end of the first inter-frequency power molecular circuit 251F serves as the second output end of the first inter-frequency power splitter circuit 250F. The output of the second slave amplifier circuit 240F is coupled to the combining end of the second inter-frequency power molecular circuit 252F. The output of the second master amplifier circuit 220F is coupled to the first branch end of the second inter-frequency power molecular circuit 252F, and the second branch end of the second inter-frequency power molecular circuit 252F serves as the first output end of the first inter-frequency power splitter circuit 250F.

[0113] For example, as shown in FIG12 , in the embodiment shown in FIG11 , the first inter-frequency power molecular circuit 251F includes a first microstrip line L1, a second microstrip line L2, a first isolation circuit ISO1, and a second isolation circuit ISO2; the second inter-frequency power molecular circuit 252F includes a third microstrip line L3, a fourth microstrip line L4, a third isolation circuit ISO3, and a fourth isolation circuit ISO4. The first end of the first microstrip line L1 and the first end of the second microstrip line L2 are coupled to form a combined end of the first inter-frequency power molecular circuit 251F. The second end of the first microstrip line L1 serves as a first branch end of the first inter-frequency power molecular circuit 251F. The second end of the second microstrip line L2 serves as a second branch end of the first inter-frequency power molecular circuit 251F. The first end of the third microstrip line L3 and the first end of the fourth microstrip line L4 are coupled to form a combined end of the second inter-frequency power molecular circuit 252F. The second end of the third microstrip line L3 serves as a first branch end of the second inter-frequency power molecular circuit 252F. The second end of the fourth microstrip line L4 serves as the second branch end of the second inter-frequency power molecular circuit 252F. The first isolation circuit ISO1 is coupled to the first branch end of the first inter-frequency power molecular circuit 251F; the second isolation circuit ISO2 is coupled to the second branch end of the first inter-frequency power molecular circuit 251F; the third isolation circuit ISO3 is coupled to the first branch end of the second inter-frequency power molecular circuit 252F; and the fourth isolation circuit ISO4 is coupled to the second branch end of the second inter-frequency power molecular circuit 252F. The first isolation circuit ISO1 exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. The second isolation circuit ISO2 exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. The third isolation circuit ISO3 exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. The fourth isolation circuit ISO4 exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal.

[0114] For example, taking the structure shown in Figures 11 and 12 as an example in which only the RF signal of the first frequency band is input, the first main amplifier circuit 210F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F input the RF signal of the first frequency band. In the absence of the RF signal of the second frequency band, the second main amplifier circuit 220F does not work. The power-amplified RF composite signal output by the first slave amplifier circuit 230F and the second slave amplifier circuit 240F only includes the power-amplified first RF signal. At this time, the circuit of Figure 12 can be equivalent to the structure shown in Figure (a) of Figure 13, which is used to power amplify the RF signal of the first frequency band. When the first main amplifier circuit 210F is turned on and the first slave amplifier circuit 230F and the second slave amplifier circuit 240F are not turned on, the output first RF composite signal only includes the first RF signal output by the first main amplifier circuit 210F. When the first slave amplifier circuit 230F and / or the second slave amplifier circuit 240F are also turned on, the output first RF composite signal is a signal obtained by power-combining multiple first RF signals. Taking the first frequency band of 1.8 GHz as an example, FIG14 is a schematic diagram showing the relationship between the power back-off amount and operating efficiency in the first frequency band under the architecture of FIG12 . FIG15 is a schematic diagram showing the relationship between the signal amplitude of each amplifier circuit in the first frequency band and the input power under the architecture of FIG12 . In the figure, taking the example of the first slave amplifier circuit 230F being turned on before the second slave amplifier circuit 240F, line ① represents the voltage change of the first master amplifier circuit 210F, line ② represents the voltage change of the first slave amplifier circuit 230F, line ③ represents the voltage change of the second slave amplifier circuit 240F, and line ④ represents the voltage change of the first master amplifier circuit 220F. FIG16 is a schematic diagram showing the relationship between the signal phase of each amplifier circuit in the first frequency band and the input power under the architecture of FIG12 . In the figure, taking the case where the first slave amplifier circuit 230F is turned on before the second slave amplifier circuit 240F, line ① represents the phase change of the first master amplifier circuit 210F, line ② represents the phase change of the first slave amplifier circuit 230F, line ③ represents the phase change of the second slave amplifier circuit 240F, and line ④ represents the phase change of the first master amplifier circuit 220F. As shown in Figures 14, 15, and 16, it can be seen that in the embodiments shown in Figures 11 and 12, the sixth multi-channel power amplification architecture 200F has two high efficiency points for RF signals in the first frequency band when the input RF power is backed off by 6.5 dB and 13.5 dB, respectively, maintaining the operation state of the traditional three-channel Doherty circuit shown in Figures 5(a) and 13(a).

[0115] For example, taking the structure shown in FIG12 as an example, in which only RF signals of the second frequency band are input, the second main amplifier circuit 220F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F input RF signals of the second frequency band. In the absence of RF signals of the first frequency band, the first main amplifier circuit 210F does not operate. The power-amplified RF combined signal output by the first slave amplifier circuit 230F and the second slave amplifier circuit 240F only includes the power-amplified second RF signal. In this case, the circuit of FIG12 can be equivalent to the structure shown in FIG13(b), which is used to power amplify RF signals of the second frequency band. When the second main amplifier circuit 220F is turned on and the first slave amplifier circuit 230F and the second slave amplifier circuit 240F are turned off, the output second RF combined signal only includes the second RF signal output by the second main amplifier circuit 220F. When the first slave amplifier circuit 230F and / or the second slave amplifier circuit 240F are also turned on, the output second RF combined signal is a signal obtained by power combining multiple second RF signals. Taking the second frequency band of 2.2 GHz as an example, Figure 17 is a schematic diagram showing the relationship between power back-off and operating efficiency in the second frequency band under the architecture of Figure 12. Figure 18 is a schematic diagram showing the relationship between the signal amplitude and input power in each amplifier circuit in the second frequency band under the architecture of Figure 12. Taking the first slave amplifier circuit 230F as an example, which is turned on after the second slave amplifier circuit 240F, line ① represents the voltage change of the first master amplifier circuit 210F, line ② represents the voltage change of the first slave amplifier circuit 230F, line ③ represents the voltage change of the second slave amplifier circuit 240F, and line ④ represents the voltage change of the first master amplifier circuit 220F. Figure 19 is a schematic diagram showing the relationship between the signal phase and input power in each amplifier circuit in the second frequency band under the architecture of Figure 12. Taking the example of the first slave amplifier circuit 230F being turned on after the second slave amplifier circuit 240F, line ① represents the phase change of the first master amplifier circuit 210F, line ② represents the phase change of the first slave amplifier circuit 230F, line ③ represents the phase change of the second slave amplifier circuit 240F, and line ④ represents the phase change of the first master amplifier circuit 220F. As shown in Figures 17, 18, and 19, it can be seen that the sixth multi-channel power amplification architecture 200F, in the embodiments shown in Figures 11 and 12, has two high efficiency points for RF signals in the second frequency band when the input RF power is backed off by 6.5 dB and 13.5 dB, respectively, maintaining the operation state of the traditional three-channel Doherty circuit shown in Figures 5(a) and 13(b).

[0116] For example, taking the structure shown in FIG12 as an example, in which RF signals of the first and second frequency bands are simultaneously input, as shown in FIG12 , the first isolation circuit ISO1 exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. This allows the first branch end of the first frequency-differential power numerator circuit 251F to exhibit a stopband characteristic for the second RF signal and a passband characteristic for the first RF signal. Therefore, based on the corresponding open-circuit and short-circuit characteristics of the first isolation circuit ISO1, the second isolation circuit ISO2, the third isolation circuit ISO3, and the fourth isolation circuit ISO4, absorption isolation of the first or second RF signal can be achieved at the corresponding locations. This allows the load-pull and power-combining effects of the structure shown in FIG13 to be achieved unaffected for the first and second frequency bands when RF signals of the first and second frequency bands are simultaneously input.

[0117] In summary, in the structures of the embodiments shown in FIG11 and FIG12, dual-frequency shared power synthesis under a multi-channel Doherty architecture can be realized based on a microstrip line structure. And when microstrip lines are used to realize heterodyne power division, the device area can be greatly reduced and the impedance characteristics of the heterodyne power division structure of the bridge structure can be freed from the limitations of the design matching. It is also easier to improve the design into other power amplification structures, and it is easier to add and expand other power amplification structures to realize the design of more branches. In addition, as shown in FIG12, a narrowband isolator can be used for isolation processing, and the power synthesis processing occurs after the isolator. In this case, the problems of large insertion loss and poor linearity caused by the use of broadband isolators can be avoided. At the same time, since the width isolator itself also has design difficulties, the design difficulty can also be reduced on the basis of avoiding the use of width isolators.

[0118] Example 2 of the connection relationship between the first and second inter-frequency power molecule circuits: One of the two inter-frequency power molecule circuits in the first inter-frequency power splitter circuit 250F is used to combine the power of the first RF signal, and the other is used to combine the power of the second RF signal. In this case, as shown in Figure 20 , the first end of the microstrip line LL is coupled to the combining end of the first inter-frequency power molecule circuit 251F, and the second end of the microstrip line LL is coupled to the combining end of the second inter-frequency power molecule circuit 252F. The output of the first slave amplifier circuit 230F is coupled to the combining end of the first inter-frequency power molecule circuit 251F; the output of the first master amplifier circuit 210F is coupled to the first branching end of the first inter-frequency power molecule circuit 251F and serves as the first output of the first inter-frequency power splitter circuit 250F. The output end of the second slave amplifier circuit 240F is coupled to the combining end of the second inter-frequency power molecule circuit 252F; the output end of the second master amplifier circuit 220F is coupled to the first branching end of the second inter-frequency power molecule circuit 252F and serves as the second output end of the first inter-frequency power dividing circuit 250F.

[0119] For example, as shown in FIG21 , the first inter-frequency power molecular circuit 251F includes a fifth microstrip line L5, a sixth microstrip line L6, and a fifth isolation circuit ISO5; the second inter-frequency power molecular circuit 252F includes a seventh microstrip line L7, an eighth microstrip line L8, and a sixth isolation circuit ISO6. The first end of the fifth microstrip line L5 serves as a combining end for the first inter-frequency power molecular circuit 251F, and the second end of the fifth microstrip line L5 serves as a first branching end for the first inter-frequency power molecular circuit 251F. The output end of the first main amplifier circuit 210F is coupled to the first end of the sixth microstrip line L6, and the second end of the sixth microstrip line L6 is coupled to the second end of the fifth microstrip line L5. The first end of the seventh microstrip line L7 serves as a combining end for the second inter-frequency power molecular circuit 252F, and the second end of the seventh microstrip line L7 serves as a first branching end for the second inter-frequency power molecular circuit 252F. The output end of the second main amplifier circuit 220F is coupled to the first end of the eighth microstrip line L8, and the second end of the eighth microstrip line L8 is coupled to the second end of the seventh microstrip line L7. The fifth isolation circuit ISO5 is coupled to the first branch end of the first inter-frequency power molecule circuit 251F. The sixth isolation circuit ISO6 is coupled to the first branch end of the second inter-frequency power molecule circuit 252F. The fifth isolation circuit ISO5 exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. The sixth isolation circuit ISO6 exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. In this embodiment of the present application, the fifth isolation circuit ISO5 and the sixth isolation circuit ISO6 can absorb or filter out RF signals that do not require power synthesis during the inter-frequency power splitting process.

[0120] Exemplarily, taking the structure shown in FIG21 as an example in which only the first RF signal of the first frequency band is input, an equivalent multi-channel Doherty architecture as shown in FIG22(a) can be obtained. The structure of FIG22(a) is the improved three-channel Doherty architecture recorded in FIG5(b). Based on the open-circuit characteristics and short-circuit characteristics of the fifth isolator ISO5 and the sixth isolator ISO6, the working principle of FIG22(a) can refer to the description of the working principle of the improved three-channel Doherty architecture of FIG5(b), which will not be repeated here. Taking the first frequency band of 1.8 GHz as an example, FIG23 is a schematic diagram of the response relationship between the power back-off amount and the working efficiency of the first frequency band under the architecture of FIG21. FIG24 is a schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the first frequency band and the input power under the architecture of FIG21. In the figure, taking the example of the first slave amplifier circuit 230F being turned on before the second slave amplifier circuit 240F, line ① represents the voltage change of the first master amplifier circuit 210F, line ② represents the voltage change of the first slave amplifier circuit 230F, line ③ represents the voltage change of the second slave amplifier circuit 240F, and line ④ represents the voltage change of the first master amplifier circuit 220F. Figure 25 is a schematic diagram showing the relationship between the signal phase response of each amplifier circuit and input power in the first frequency band of the architecture of Figure 21. In the figure, taking the example of the first slave amplifier circuit 230F being turned on before the second slave amplifier circuit 240F, line ① represents the phase change of the first master amplifier circuit 210F, line ② represents the phase change of the first slave amplifier circuit 230F, line ③ represents the phase change of the second slave amplifier circuit 240F, and line ④ represents the phase change of the first master amplifier circuit 220F. As shown in Figures 23, 24 and 25, it can be seen that in the embodiments shown in Figures 20 and 21, the sixth multi-channel power amplification architecture 200F has two high efficiency points for the RF signal in the first frequency band when the input RF power is backed off by 6.5dB and 13.5dB respectively, and maintains the state of working in the improved three-channel Doherty architecture as shown in Figure 5 (b) and Figure 22 (a).

[0121] Regarding the principles of the structure shown in FIG21 for inputting only the second frequency band, or simultaneously inputting the first and second frequency bands, please refer to the aforementioned description of the structure shown in FIG21 for inputting the first frequency band, as well as the aforementioned description of the open-circuit and short-circuit characteristics of the isolator in the embodiment shown in FIG12 , and will not be repeated here. Taking the second frequency band of 2.2 GHz as an example, FIG26 shows the relationship between power back-off and operating efficiency in the second frequency band of the structure shown in FIG21 . FIG27 shows the relationship between the signal amplitude of each amplifier circuit in the second frequency band and input power in the structure shown in FIG21 . In the figure, taking the example of the first slave amplifier circuit 230F being turned on after the second slave amplifier circuit 240F, line ① shows the voltage change of the first master amplifier circuit 210F, line ② shows the voltage change of the first slave amplifier circuit 230F, line ③ shows the voltage change of the second slave amplifier circuit 240F, and line ④ shows the voltage change of the first master amplifier circuit 220F. FIG28 shows the relationship between the signal phase of each amplifier circuit in the second frequency band and input power in the structure shown in FIG21 . In the figure, taking the example of the first slave amplifier circuit 230F being turned on after the second slave amplifier circuit 240F, line ① represents the phase change of the first master amplifier circuit 210F, line ② represents the phase change of the first slave amplifier circuit 230F, line ③ represents the phase change of the second slave amplifier circuit 240F, and line ④ represents the phase change of the first master amplifier circuit 220F. As shown in Figures 26, 27, and 28, it can be seen that in the embodiments shown in Figures 20 and 21, the sixth multi-channel power amplification architecture 200F has two high efficiency points for RF signals in the second frequency band when the input RF power is backed off by 6.5 dB and 13.5 dB, respectively, maintaining the state of the improved three-channel Doherty circuit shown in Figures 5(b) and 22(b).

[0122] In the structures of the embodiments of the present application as shown in Figures 20 and 21, dual-frequency shared power synthesis under a multi-channel Doherty architecture can be realized based on a microstrip line structure. And in the case of using microstrip lines to realize heterodyne power division, the device area can be greatly reduced and the impedance characteristics of the heterodyne power division structure of the bridge structure can be freed from the limitations of the design matching. It is also easier to improve the design into other power amplification structures, and to add and expand other power amplification structures to realize the design of more branches. In addition, as shown in Figure 21, a narrowband isolator can be used for isolation processing, and the power synthesis processing occurs after the isolator. In this case, the problems of large insertion loss and poor linearity caused by the use of broadband isolators can be avoided. At the same time, since the width isolator itself also has design difficulties, the design difficulty can also be reduced on the basis of avoiding the use of width isolators.

[0123] Example 3 of the connection relationship between the first inter-frequency power molecule circuit and the second inter-frequency power molecule circuit: One of the two inter-frequency power molecule circuits in the first inter-frequency power splitting circuit 250F is used to implement inter-frequency power splitting of the first and second RF signals output by the two main amplifier circuits, and the other inter-frequency power molecule circuit is used to implement inter-frequency power splitting of the first and second RF synthesized signals obtained by power synthesis. In this case, as shown in FIG29 , the first branch end of the first inter-frequency power molecule circuit 251F is coupled to the output end of the first main amplifier circuit 210F, the second branch end of the first inter-frequency power molecule circuit 251F is coupled to the output end of the second main amplifier circuit 220F, and the combining end of the first inter-frequency power molecule circuit 251F and the output end of the first slave amplifier circuit 230F are respectively coupled to the first end of the microstrip line LL. The combining end of the second inter-frequency power molecular circuit 252F and the output end of the second slave amplifier circuit 240F are respectively coupled to the second end of the connected microstrip line LL, the first branch end of the second inter-frequency power molecular circuit 252F serves as the first output end of the first inter-frequency power division circuit 250F, and the second branch end of the second inter-frequency power molecular circuit 252F serves as the second output end of the first inter-frequency power division circuit 250F.

[0124] For example, as shown in FIG30 , the first inter-frequency power molecular circuit 251F includes a ninth microstrip line L9, a tenth microstrip line L10, a seventh isolation circuit ISO7, and an eighth isolation circuit ISO8. The second inter-frequency power molecular circuit 252F includes an eleventh microstrip line L11, a twelfth microstrip line L12, a ninth isolation circuit ISO9, and a tenth isolation circuit ISO10. The first end of the ninth microstrip line L9 serves as a first branch end of the first inter-frequency power molecular circuit 251F, the second end of the ninth microstrip line L9 and the second end of the tenth microstrip line L10 are coupled to form a combined end of the first inter-frequency power molecular circuit 251F, and the first end of the tenth microstrip line L10 serves as a second branch end of the first inter-frequency power molecular circuit 251F. The first end of the eleventh microstrip line L11 serves as the first branch end of the second inter-frequency power molecular circuit 252F. The second end of the eleventh microstrip line L11 and the second end of the twelfth microstrip line L12 are coupled to form a combined end of the second inter-frequency power molecular circuit 252F. The first end of the twelfth microstrip line L12 serves as the second branch end of the second inter-frequency power molecular circuit 252F. The seventh isolation circuit ISO7 is coupled to the first branch end of the first inter-frequency power molecular circuit 251F. The eighth isolation circuit ISO8 is coupled to the second branch end of the first inter-frequency power molecular circuit 251F. The ninth isolation circuit ISO9 is coupled to the first branch end of the second inter-frequency power molecular circuit 252F. The tenth isolation circuit ISO10 is coupled to the second branch end of the second inter-frequency power molecular circuit 252F. The seventh isolation circuit ISO7 exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. The eighth isolation circuit ISO8 exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. The ninth isolation circuit ISO9 exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. The tenth isolation circuit ISO10 exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. In the embodiment of the present application, the first inter-frequency power molecule circuit 251F functions to inter-frequency combine the first RF signal output by the first main amplifier circuit 210F and the second RF signal output by the second main amplifier circuit 220F. The seventh isolator ISO7 enables the first branch end of the first inter-frequency power molecule circuit 251F to achieve a passband characteristic for the first RF signal and a stopband characteristic for the second RF signal, while the eighth isolator ISO8 enables the second branch end of the first inter-frequency power molecule circuit 251F to achieve a passband characteristic for the second RF signal and a stopband characteristic for the first RF signal. Similarly, after the combining end of the first inter-frequency power molecule circuit 251F outputs the first RF signal and / or the second RF signal, the output RF signal is load-pulled with the first slave amplifier circuit 230F and the second slave amplifier circuit 240F via the connecting microstrip line LL to achieve power combining.The sixth inter-frequency power division circuit 252F needs to perform inter-frequency power division on the first RF synthesized signal and the second RF synthesized signal obtained by power synthesis, so as to output the first RF synthesized signal and the second RF synthesized signal from the first branch end and the second branch end of the sixth inter-frequency power division circuit 252F respectively. At this time, the ninth isolator ISO9 and the tenth isolator ISO10 are also needed to absorb and filter the RF signals of the frequency band that do not need to be output, so as to improve the effect of the inter-frequency power division.

[0125] For example, taking the structure shown in FIG30 as an example in which only the first RF signal of the first frequency band is input, a multi-way Doherty architecture similar to the embodiment described in FIG22(a) can be equivalently obtained. The structure of FIG22(a) is the improved three-way Doherty architecture described in FIG5(b). Based on the open-circuit characteristics and short-circuit characteristics of the seventh isolation circuit ISO7, the eighth isolation circuit ISO8, the ninth isolation circuit ISO9 and the tenth isolation circuit ISO10, the working principle of FIG22(a) can refer to the description of the working principle of the improved three-way Doherty architecture of FIG5(b), which will not be repeated here. Taking the first frequency band of 1.8 GHz as an example, FIG31 is a schematic diagram of the response relationship between the power backoff amount and the working efficiency of the first frequency band under the architecture of FIG30. FIG32 is a schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the first frequency band and the input power under the architecture of FIG30. In the figure, taking the example of the first slave amplifier circuit 230F being turned on before the second slave amplifier circuit 240F, line ① represents the voltage change of the first master amplifier circuit 210F, line ② represents the voltage change of the first slave amplifier circuit 230F, line ③ represents the voltage change of the second slave amplifier circuit 240F, and line ④ represents the voltage change of the first master amplifier circuit 220F. FIG33 is a schematic diagram showing the relationship between the signal phase response of each amplifier circuit and input power in the first frequency band of the architecture of FIG30. In the figure, taking the example of the first slave amplifier circuit 230F being turned on before the second slave amplifier circuit 240F, line ① represents the phase change of the first master amplifier circuit 210F, line ② represents the phase change of the first slave amplifier circuit 230F, line ③ represents the phase change of the second slave amplifier circuit 240F, and line ④ represents the phase change of the first master amplifier circuit 220F. As shown in Figures 31, 32 and 33, it can be seen that in the embodiments shown in Figures 29 and 30, the sixth multi-channel power amplification architecture 200F has two high efficiency points for the RF signal in the first frequency band when the input RF power is backed off by 6.5dB and 13.5dB respectively, and maintains the state of working in the improved three-channel Doherty architecture as shown in Figure 5 (b) and Figure 22 (a).

[0126] Regarding the principles of the structure shown in FIG30 for inputting only the second frequency band, or simultaneously inputting the first and second frequency bands, please refer to the aforementioned description of the structure shown in FIG30 for inputting the first frequency band, as well as the aforementioned description of the open-circuit and short-circuit characteristics of the isolator in the embodiment shown in FIG12 , and will not be repeated here. Taking the second frequency band of 2.2 GHz as an example, FIG34 illustrates the relationship between power back-off and operating efficiency in the second frequency band of the architecture shown in FIG21 . FIG35 illustrates the relationship between the signal amplitude and input power in each amplifier circuit in the second frequency band of the architecture shown in FIG21 . In the figure, taking the case where the first slave amplifier circuit 230F is turned on after the second slave amplifier circuit 240F, line ① represents the voltage change of the first master amplifier circuit 210F, line ② represents the voltage change of the first slave amplifier circuit 230F, line ③ represents the voltage change of the second slave amplifier circuit 240F, and line ④ represents the voltage change of the first master amplifier circuit 220F. FIG36 illustrates the relationship between the signal phase and input power in each amplifier circuit in the second frequency band of the architecture shown in FIG21 . In the figure, taking the case where the first slave amplifier circuit 230F is turned on after the second slave amplifier circuit 240F, line ① represents the phase change of the first master amplifier circuit 210F, line ② represents the phase change of the first slave amplifier circuit 230F, line ③ represents the phase change of the second slave amplifier circuit 240F, and line ④ represents the phase change of the first master amplifier circuit 220F. As shown in Figures 34, 35, and 36, it can be seen that in the embodiments shown in Figures 29 and 30, the sixth multi-channel power amplification architecture 200F has two high efficiency points for RF signals in the second frequency band when the input RF power is backed off by 6.5 dB and 13.5 dB, respectively, maintaining the state of the improved three-channel Doherty circuit shown in Figures 5(b) and 22(b).

[0127] In the structures of the embodiments of the present application as shown in Figures 29 and 30, dual-frequency shared power synthesis under a multi-channel Doherty architecture can be realized based on a microstrip line structure. And in the case of using microstrip lines to realize heterodyne power division, the device area can be greatly reduced and the impedance characteristics of the heterodyne power division structure of the bridge structure can be freed from the limitations of the design matching. It is also easier to improve the design into other power amplification structures, and to add and expand other power amplification structures to realize the design of more branches. In addition, as shown in Figure 30, a narrowband isolator can be used for isolation processing, and the power synthesis processing occurs after the isolator. In this case, the problems of large insertion loss and poor linearity caused by the use of broadband isolators can be avoided. At the same time, since the width isolator itself also has design difficulties, the design difficulty can also be reduced on the basis of avoiding the use of width isolators.

[0128] In some possible implementations, the embodiments shown in Figures 11, 20, and 29 may also have other structures besides those described in Figures 12, 21, and 30. For example, the first inter-frequency power splitter circuit 251F and / or the second inter-frequency power splitter circuit 252F in the embodiments shown in Figures 11, 20, and 29 may also be microstrip inter-frequency power splitter circuits. As shown in Figure 37, the microstrip inter-frequency power splitter circuit includes a twenty-third microstrip line L23, a twenty-fourth microstrip line L24, a twenty-fifth microstrip line L25, a twenty-sixth microstrip line L26, a twenty-seventh microstrip line L27, a twenty-eighth microstrip line L28, and a twenty-ninth microstrip line L29. The electrical lengths of the twenty-fourth microstrip line L24 and the twenty-fifth microstrip line L25 are one-quarter the wavelength of the second RF signal. The electrical lengths of the twenty-sixth microstrip line L26 and the twenty-seventh microstrip line L27 are one-quarter the wavelength of the first RF signal. The first end of the twenty-third microstrip line L23 serves as the first branching end of the microstrip inter-frequency power splitting circuit, and the second end of the twenty-third microstrip line L23 is coupled to the first end of the twenty-fourth microstrip line L24 and the first end of the twenty-fifth microstrip line L25, respectively. The first end of the twenty-eighth microstrip line L28 serves as the second branching end of the microstrip inter-frequency power splitting circuit, and the second end of the twenty-eighth microstrip line L28 is coupled to the first end of the twenty-seventh microstrip line L27 and the first end of the twenty-sixth microstrip line L26, respectively. The second end of the twenty-fifth microstrip line L25 and the second end of the twenty-sixth microstrip line L26 are coupled to the first end of the twenty-ninth microstrip line L29, respectively, and the second end of the twenty-ninth microstrip line L29 serves as the combining end of the microstrip inter-frequency power splitting circuit. In the embodiment of the present application, because the twenty-fourth microstrip line L24 and the twenty-fifth microstrip line L25 are microstrip lines of a quarter wavelength in the second frequency band, the two make the radio frequency signal of the second frequency band at the node between the twenty-fifth microstrip line L25, the twenty-sixth microstrip line L26, and the twenty-ninth microstrip line L29 present an open circuit toward the top of the node, that is, the radio frequency signal of the second frequency band can only flow in the transmission direction between the twenty-sixth microstrip line L26 and the twenty-ninth microstrip line L29. Because the twenty-sixth microstrip line L26 and the twenty-seventh microstrip line L27 are microstrip lines of a quarter wavelength in the first frequency band, the two make the radio frequency signal of the first frequency band at the node between the twenty-fifth microstrip line L25, the twenty-sixth microstrip line L26, and the twenty-ninth microstrip line L29 present an open circuit toward the bottom of the node, that is, the radio frequency signal of the first frequency band can only flow in the transmission direction between the twenty-fifth microstrip line L25 and the twenty-ninth microstrip line L29. The above method can effectively achieve the effect of different-frequency power splitting. The different-frequency power division circuit realized by microstrip line can improve the integration and reduce the area cost.

[0129] In some possible implementations, in the embodiment shown in FIG10 , a microstrip line combined with a bridge structure can be used in the first inter-frequency power splitting circuit 250F to achieve power synthesis of the first RF signal, power synthesis of the second RF signal, and inter-frequency power splitting in two frequency bands. In this case, as shown in FIG38 , the first inter-frequency power splitting circuit 250F includes a coupling bridge 257F, a thirteenth microstrip line L13, a fourteenth microstrip line L14, a fifteenth microstrip line L15, a sixteenth microstrip line L16, a seventeenth microstrip line L17, an eighteenth microstrip line L18, an eleventh isolation circuit ISO11, a twelfth isolation circuit ISO12, a thirteenth isolation circuit ISO13, and a fourteenth isolation circuit ISO14. The first end of the thirteenth microstrip line L13 and the first end of the fifteenth microstrip line L15 are coupled to the eleventh isolation circuit ISO11 and then to the output of the first master amplifier circuit 210F. The second end of the thirteenth microstrip line L13 is coupled to the output of the first slave amplifier circuit 230F and the first end of the coupling bridge 257F, respectively. The first end of the fourteenth microstrip line L14 and the second end of the fifteenth microstrip line L15 are coupled to the twelfth isolation circuit ISO12 and then serve as the second output of the first inter-frequency power splitter circuit 250F. The second end of the fourteenth microstrip line L14 is coupled to the second end of the coupling bridge 257F. The first end of the sixteenth microstrip line L16 is coupled to the output of the second slave amplifier circuit 240F and the third end of the coupling bridge 257F, respectively. The second end of the sixteenth microstrip line L16 and the first end of the eighteenth microstrip line L18 are coupled to the thirteenth isolation circuit ISO13 and then to the output of the second master amplifier circuit 210F. The first end of the seventeenth microstrip line L17 is coupled to the fourth end of the coupling bridge 257F. The second end of the seventeenth microstrip line L17, the second end of the eighteenth microstrip line L18, and the fourteenth isolation circuit ISO14 are coupled to form the first output end of the first inter-frequency power splitter circuit 250F. The eleventh isolation circuit ISO11 exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. The twelfth isolation circuit ISO12 exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. The thirteenth isolation circuit ISO13 exhibits a short-circuit characteristic for the first RF signal and an open-circuit characteristic for the second RF signal. The fourteenth isolation circuit ISO14 exhibits a short-circuit characteristic for the second RF signal and an open-circuit characteristic for the first RF signal. The first and second ends of the coupling bridge 257F serve as coupling ends, and the first and fourth ends of the coupling bridge 257F serve as through ends.

[0130] In some examples, as shown in FIG39 , the coupling bridge 257F includes a nineteenth microstrip line L19, a twentieth microstrip line L20, a twenty-first microstrip line L21, and a twenty-second microstrip line L22. The first end of the nineteenth microstrip line L19 is coupled with the first end of the twentieth microstrip line L20 to serve as the first end of the coupling bridge 257F. The second end of the nineteenth microstrip line L19 is coupled with the first end of the twenty-first microstrip line L21 to serve as the second end of the coupling bridge 257F. The second end of the twentieth microstrip line L20 is coupled with the first end of the twenty-second microstrip line L22 to serve as the third end of the coupling bridge 257F. The second end of the twenty-first microstrip line L21 is coupled with the second end of the twenty-second microstrip line L22 to serve as the fourth end of the coupling bridge 257F.

[0131] Figures 38 and 39 illustrate an example of a coupling bridge 257F being a cross-broadside coupler. In other embodiments, coupling bridge 257F may also be a branch line coupler or a parallel broadside coupler. When coupling bridge 257F is a branch line coupler or a parallel broadside coupler, the port connection orientation is different from the connection orientation shown in Figures 38 and 39. However, regardless of the type of coupler used by coupling bridge 257F, the coupling principle described in the embodiment of Figure 38 is adhered to: the first and second ends of coupling bridge 257F are coupled ends, and the first and fourth ends of coupling bridge 257F are through-ends. In actual applications, whether the connection relationship of coupling bridge 257F corresponds to the connection relationship described in this embodiment is determined based on the port position connection of the coupled end, through-end, etc., rather than by the relative connection orientation between ports on the same side of coupling bridge 257F.

[0132] For example, for example, taking the structure shown in FIG39 as an example in which only the first RF signal of the first frequency band is input, a multi-channel Doherty architecture as shown in FIG40(a) can be equivalently obtained. The structure of FIG40(a) is an improved architecture for implementing a three-channel Doherty architecture based on a bridge structure. Based on the open-circuit characteristics and short-circuit characteristics of the eleventh isolation circuit ISO11, the twelfth isolation circuit ISO12, the thirteenth isolation circuit ISO13, and the fourteenth isolation circuit ISO14, the combination of the bridge and the microstrip line in FIG40(a) can achieve load pulling and impedance change. Taking the first frequency band of 1.8 GHz as an example, FIG41 is a schematic diagram of the response relationship between the power back-off amount and the working efficiency of the first frequency band under the architecture of FIG39. FIG42 is a schematic diagram of the response relationship between the signal amplitude of each amplifier circuit in the first frequency band and the input power under the architecture of FIG39. In the figure, taking the case where the first slave amplifier circuit 230F is turned on before the second slave amplifier circuit 240F, line ① represents the voltage change of the first master amplifier circuit 210F, line ② represents the voltage change of the first slave amplifier circuit 230F, line ③ represents the voltage change of the second slave amplifier circuit 240F, and line ④ represents the voltage change of the first master amplifier circuit 220F. Figure 43 is a schematic diagram showing the relationship between the signal phase response of each amplifier circuit and input power in the first frequency band of the architecture of Figure 39. In the figure, taking the case where the first slave amplifier circuit 230F is turned on before the second slave amplifier circuit 240F, line ① represents the phase change of the first master amplifier circuit 210F, line ② represents the phase change of the first slave amplifier circuit 230F, line ③ represents the phase change of the second slave amplifier circuit 240F, and line ④ represents the phase change of the first master amplifier circuit 220F. As shown in Figures 41, 42 and 43, it can be seen that in the embodiments shown in Figures 38 and 39, the sixth multi-channel power amplification architecture 200F has two high efficiency points for the RF signal in the first frequency band when the input RF power is backed off by 6dB and 13dB respectively, maintaining the state of working in the improved three-channel Doherty architecture.

[0133] Regarding the principles of the structure shown in FIG39 for inputting only the second frequency band, or simultaneously inputting the first and second frequency bands, please refer to the aforementioned description of the structure shown in FIG39 for inputting the first frequency band, as well as the aforementioned description of the open-circuit and short-circuit characteristics of the isolator in the embodiment shown in FIG12 , and will not be repeated here. Taking the second frequency band of 2.2 GHz as an example, FIG44 illustrates the relationship between power back-off and operating efficiency in the second frequency band of the structure shown in FIG39 . FIG45 illustrates the relationship between the signal amplitude of each amplifier circuit in the second frequency band and input power in the structure shown in FIG39 . In the figure, taking the case where the first slave amplifier circuit 230F is turned on after the second slave amplifier circuit 240F, line ① represents the voltage change of the first master amplifier circuit 210F, line ② represents the voltage change of the first slave amplifier circuit 230F, line ③ represents the voltage change of the second slave amplifier circuit 240F, and line ④ represents the voltage change of the first master amplifier circuit 220F. FIG46 illustrates the relationship between the signal phase of each amplifier circuit in the second frequency band and input power in the structure shown in FIG39 . In the figure, taking the example of the first slave amplifier circuit 230F being turned on after the second slave amplifier circuit 240F, line ① represents the phase change of the first master amplifier circuit 210F, line ② represents the phase change of the first slave amplifier circuit 230F, line ③ represents the phase change of the second slave amplifier circuit 240F, and line ④ represents the phase change of the first master amplifier circuit 220F. The structure shown in FIG39 , when only the second RF signal of the second frequency band is input, can be equivalent to a multi-channel Doherty architecture as shown in FIG40(b). The structure of FIG40(b) is an improved architecture for implementing a three-channel Doherty architecture based on a bridge structure. As shown in FIG44 , FIG45 , and FIG46 , it can be seen that in the embodiments shown in FIG38 and FIG39 , the sixth multi-channel power amplifier architecture 200F has two high efficiency points for the second frequency band RF signal when the input RF power is backed off by 6 dB and 13 dB, respectively, maintaining the state of operating as an improved three-channel Doherty circuit.

[0134] In some possible implementations, such as in the embodiments of FIG. 10 , FIG. 11 , FIG. 20 , FIG. 21 , FIG. 29 , FIG. 30 , FIG. 38 , and FIG. 39 , the sixth multi-channel power amplification architecture 200F is a dual-frequency dual-output architecture.

[0135] In some possible implementations, based on the embodiments of Figures 10, 11, 20, 21, 29, 30, 38, and 39, the sixth multi-channel power amplification architecture 200F can also be configured as a dual-frequency single-output architecture.

[0136] In some examples, the first RF composite signal and the second RF composite signal may be received by a common inter-frequency power splitter and combined into one output RF signal.

[0137] In some examples, a microstrip inter-frequency power splitter circuit can be designed based on microstrip lines to receive the first RF composite signal and the second RF composite signal and combine them into a single output RF signal. In this case, as shown in FIG47 , the sixth multi-channel power amplification architecture 200F also includes a second inter-frequency power splitter circuit 260F; the second inter-frequency power splitter circuit 260F includes multiple microstrip lines. The first output end of the first inter-frequency power splitter circuit 250F is coupled to the first branch end of the second inter-frequency power splitter circuit 260F, and the first output end of the first inter-frequency power splitter circuit 250F is coupled to the second branch end of the second inter-frequency power splitter circuit 260F. The combining end of the second inter-frequency power splitter circuit 260F is used to output any one of the following signals: the first RF composite signal, the second RF composite signal, or a composite signal of the first RF composite signal and the second RF composite signal. In an embodiment of the present application, the first RF synthesized signal and the second RF synthesized signal can be input into the second inter-frequency power division circuit 260F based on the first branch end and the second branch end of the second inter-frequency power division circuit 260F, and output as one channel through the combining end of the second inter-frequency power division circuit 260F.

[0138] Exemplarily, the second inter-frequency power splitter circuit 260F can be a conventional inter-frequency power splitter. Exemplarily, the second inter-frequency power splitter circuit 260F can also be a microstrip line equivalent structure as described in the embodiments of the first inter-frequency power splitter circuit 251F and the second inter-frequency power splitter circuit 252F. This approach can achieve an equivalent inter-frequency power splitting effect. Implementing an inter-frequency power splitter circuit using microstrip lines can improve integration and reduce area overhead.

[0139] In some possible implementations, at least one of the first main amplifier circuit 210F, the second main amplifier circuit 210F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F is a power combining circuit; the power combining circuit includes multiple amplification branch circuits. Exemplarily, the power combining circuit includes at least one of the following: a Doherty circuit, an inverse Doherty circuit, an asymmetric Doherty circuit, an LMBA circuit, an SLMBA circuit, a balun voltage-type combining circuit, a Chireix amplifier circuit, and an out-of-phase modulation amplifier circuit. In the embodiments of the present application, when a power combining architecture is implemented based on a microstrip line equivalent inter-frequency power splitter circuit, the design difficulty of a power amplifier with high back-off, high efficiency, and large power bandwidth can be reduced. At this time, the sixth multi-channel power amplifier architecture 200B of the above embodiment can be expanded to a larger power back-off amount. For example, at least one of the first main amplifier circuit 210F, the second main amplifier circuit 210F, the first slave amplifier circuit 230F and the second slave amplifier circuit 240F can be designed as a power synthesis circuit including multiple amplifier branch circuits, thereby obtaining a larger back-off power and more saturation power points on the basis of the three-channel Doherty architecture.

[0140] In some examples, more power amplification branches may be added to the first output terminal and / or the second output terminal of the first inter-frequency power splitter circuit 250F to combine the first RF composite signal and / or the second RF composite signal output by the sixth multi-channel power amplification architecture 200B with the RF signals output by the additional power amplification branches. In the embodiment of the present application, because the use of microstrip lines reduces the design difficulty of a power amplifier with high back-off, high efficiency, and large power bandwidth, more power combining architectures may be added to the post-output stage of the first inter-frequency power splitter circuit 250F.

[0141] In some possible implementations, as shown in FIG48 , the sixth multi-channel power amplification architecture 200F further includes a shunt circuit 280F and a first coupler 270F. The shunt circuit 280F is configured to input a first RF signal and a second RF signal, and output the first RF signal to the input end of the first master amplifier circuit 210F and the first end of the first coupler 270F, respectively, and output the second RF signal to the input end of the second master amplifier circuit 210F and the third end of the first coupler 270F, respectively. The second end of the first coupler 270F and the fourth end of the first coupler 270F are configured to output a combined RF signal to the input end of the first slave amplifier circuit 230F and the input end of the second slave amplifier circuit 240F, respectively.

[0142] In some examples, as shown in FIG49 , the branching circuit 280F includes a first power divider 281F and a second power divider 282F. The combining end of the first power divider 281F is used to input a first RF signal. The first branching end and the second branching end of the first power divider 281F are respectively used to output one channel of the first RF signal. The combining end of the second power divider 282F is used to input a second RF signal. The first branching end and the second branching end of the second power divider 282F are respectively used to output one channel of the second RF signal.

[0143] In some examples, as shown in FIG50 , the branching circuit 280F includes a first inter-frequency power divider 283F and a second inter-frequency power divider 284F; the first inter-frequency power divider 283F and / or the second inter-frequency power divider 284F include multiple microstrip lines. The combining end of the first inter-frequency power divider 283F is used to input the first RF signal and the second RF signal. The first branch end of the first inter-frequency power divider 283F outputs the first RF signal. The second branch end of the first inter-frequency power divider 283F outputs the second RF signal. The combining end of the first inter-frequency power divider 283F inputs the first RF signal and the second RF signal. The first branch end of the second inter-frequency power divider 284F outputs the first RF signal. The second branch end of the second inter-frequency power divider 284F outputs the second RF signal. In an embodiment of the present application, the first heterodyne power divider 283F and the second heterodyne power divider 284F may also adopt an equivalent structure based on a microstrip line to reduce area overhead and improve device integration. For example, the structure of the heterodyne power divider circuit based on a microstrip line shown in Figure 50 may be adopted.

[0144] In some examples, as shown in FIG51 , the branching circuit 280F includes a third inter-frequency power divider 285F, a third power divider 286F, and a fourth power divider 287F. The first branching end and the second branching end of the third inter-frequency power divider 285F are coupled to the combining end of the third power divider 286F and the combining end of the fourth power divider 287F, respectively. The third inter-frequency power divider 285F includes multiple microstrip lines. The combining end of the third inter-frequency power divider 285F is used to input a first RF signal and a second RF signal. The first branching end of the third inter-frequency power divider 285F is used to output the first RF signal. The second branching end of the third inter-frequency power divider 285F is used to output the second RF signal. The first branching end and the second branching end of the third power divider 286F are used to output one first RF signal. The first branching end and the second branching end of the fourth power divider 287F are used to output one second RF signal. In an embodiment of the present application, the third frequency-differential power divider 285F may also adopt an equivalent structure based on a microstrip line to reduce area overhead and improve device integration. For example, the structure of the frequency-differential power divider circuit based on a microstrip line shown in Figure 50 may be adopted.

[0145] In some possible implementations, the first RF signal and / or the second RF signal include RF signals of at least one sub-band. In an embodiment of the present application, a RF signal with a relatively large bandwidth can be split into a plurality of first RF signals and second RF signals with relatively small bandwidths. The convergence of the impedance design is more friendly under a smaller relative bandwidth, and the efficiency of each amplification branch can be further improved, thereby improving the fallback efficiency and full-load efficiency of the multi-channel power amplification architecture. In addition, splitting the traditional wide-band main amplifier circuit into a plurality of RF signals with relatively small bandwidths can avoid the problem of difficult VBW design in concurrent scenarios and will not cause deterioration of concurrent performance.

[0146] Exemplarily, the first RF signal may be located at 1.8 GHz, and the second RF signal may be located at 2.1 GHz, 2.2 GHz, or 2.6 GHz, and so on. Exemplarily, the first RF signal may be located at the low three bands (e.g., 700 MHz, 800 MHz, and 900 MHz), and the second RF signal may be located at the middle three bands (e.g., 1.8 GHz, 2.2 GHz, and 2.6 GHz). Alternatively, the first RF signal and / or the second RF signal may also be located at other frequency bands. Exemplarily, the first RF signal may include the first of the low three bands, and the second RF signal may include the other two of the low three bands. Alternatively, the first RF signal may include two of the low three bands, and the second RF signal may include the remaining one of the third band. Exemplarily, the first RF signal may be located at the dual bands of 1.8 GHz and 2.2 GHz among the middle three bands, and the second RF signal may be located at the single band of 2.6 GHz among the middle three bands. In the embodiment of the present application, by dividing one main path into two designs with relatively smaller bandwidths, for example, the relative bandwidth of the middle three-band is 40%, the middle three-band is divided into a dual-band of 1.8GHz and 2.2GHz (relative bandwidth 18%) and a single-band of 2.6GHz (relative bandwidth 3%). This makes the impedance design more convergent at a smaller relative bandwidth, further improving the efficiency of each amplification branch, thereby improving the fallback efficiency and full-load efficiency of the sixth multi-channel power amplification architecture 200F.

[0147] In some possible implementations, the minimum operating power point of the first master amplifier circuit 210F is less than the minimum operating power point of the first slave amplifier circuit 230F and the minimum operating power point of the second slave amplifier circuit 240F. The minimum operating power point of the second master amplifier circuit 210F is less than the minimum operating power point of the first slave amplifier circuit 230F and the minimum operating power point of the second slave amplifier circuit 240F. The minimum operating power point of the first slave amplifier circuit 230F is less than, equal to, or greater than the minimum operating power point of the second slave amplifier circuit 240F. In an embodiment of the present application, the first master amplifier circuit 210F and the second master amplifier circuit 220F can operate in Class AB. As the power of the input RF signal increases, the two master amplifier circuits will start working before the slave amplifier circuit. Therefore, the minimum operating power points of the two master amplifier circuits are both less than the minimum operating power point of the first slave amplifier circuit 230F and the minimum operating power point of the second slave amplifier circuit 240F. In actual applications, the first slave amplifier circuit 230F may be started up at the same time as the second slave amplifier circuit 240F, or may be started up before or after the second slave amplifier circuit 240F.

[0148] In some possible implementations, the sixth multi-channel power amplification architecture 200F further includes a driving circuit or a control circuit, which controls the minimum operating power points of the first master amplifier circuit 210F, the second master amplifier circuit 210F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F based on the driving circuit or the control circuit. In the embodiment of the present application, since the first slave amplifier circuit 230F and the second slave amplifier circuit 240F in the same architecture may also have a reversed start-up order (for example, in one architecture, for a radio frequency signal in a first frequency band, the first slave amplifier circuit 230F may be turned on before the second slave amplifier circuit 240F, but for a radio frequency signal in a second frequency band, the second slave amplifier circuit 240F may be turned on before the first slave amplifier circuit 230F), the minimum operating power points of the first master amplifier circuit 210F, the second master amplifier circuit 210F, the first slave amplifier circuit 230F, and the second slave amplifier circuit 240F may be controlled by a driving circuit or a digital domain control circuit to achieve control of the start-up order.

[0149] In some possible implementations, at least one of the multiple microstrip lines is a microstrip line with a three-dimensional stacked structure. Exemplarily, the microstrip line may be a suspended microstrip line. In the embodiments of the present application, the three-dimensional stacked microstrip line maintains the same performance as a conventional microstrip line, but its area is significantly smaller. The three-dimensional stacked microstrip line structure can reduce the area overhead of a multi-channel power amplifier architecture.

[0150] Embodiments of the present application provide a multi-channel power amplifier architecture, RF generation equipment, and communication system. First, the multi-channel power amplifier architecture implements load pulling and inter-frequency power division based on microstrip lines, thereby increasing the freedom of architectural design while reducing the design challenges brought about by the impedance characteristics of the bridge. Second, microstrip lines reduce device area overhead and improve device integration. Third, when load pulling and inter-frequency power division are performed based on a microstrip line structure, the design requirements for the isolation circuit required for the inter-frequency power division function are reduced, and narrowband isolators can be used as isolation circuits, avoiding the insertion loss and design challenges brought about by broadband isolators. Fourth, when load pulling and inter-frequency power division are performed based on a microstrip line structure, the architecture can be expanded more easily, thereby achieving greater power fallback, etc. Fifth, this solution can implement different input and output forms, such as single-frequency single output under dual-frequency input, dual-frequency dual output, and dual-frequency single output. Sixth, when dual-frequency sharing is used, the frequency band of the main channel can be narrowbanded, thereby optimizing the performance of the narrowband power amplifier and eliminating the impact of multi-frequency concurrent characteristics on the power amplifier performance. Seventh, this solution can be equivalent to a traditional three-way Doherty architecture or an improved three-way Doherty architecture, which can be selected based on actual application requirements. At the same time, it can be further expanded to a Doherty architecture with more channels. Eighth, as the number of branches in the Doherty architecture increases, the number of impedance transformation lines and impedance inversion lines required will also increase. In this case, the solution of adopting the microstrip line equivalent structure described in this embodiment can significantly reduce the area overhead ratio.

[0151] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0152] Those skilled in the art will appreciate that the modules and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0153] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and modules described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0154] In the several embodiments provided in this application, it should be understood that the disclosed systems, devices, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For example, the division of the modules is merely a logical function division. In actual implementation, there may be other division methods, such as multiple modules or components can be combined or integrated into another device, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or modules, which can be electrical, mechanical or other forms.

[0155] The modules described as separate components may or may not be physically separate, and the components shown as modules may or may not be physical modules, that is, they may be located on a single device or distributed across multiple devices. Some or all of the modules may be selected to achieve the purpose of this embodiment based on actual needs.

[0156] In addition, the functional modules in the various embodiments of the present application may be integrated into one device, or each module may exist physically separately, or two or more modules may be integrated into one device.

[0157] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using a software program, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When loading and executing computer program instructions on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable devices. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions can be transmitted from a website, computer, server or data center by wired (such as coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (such as infrared, wireless, microwave, etc.) mode to another website, computer, server or data center. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that contains one or more media that can be integrated. The available medium may be a magnetic medium (eg, a floppy disk, a hard disk, a magnetic tape), an optical medium (eg, a DVD), or a semiconductor medium (eg, a solid state disk (SSD)).

[0158] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A multi-channel power amplification architecture, characterized in that, It includes a first main amplifier circuit, a second main amplifier circuit, a first slave amplifier circuit, a second slave amplifier circuit, and a first different-frequency power splitter circuit; the first different-frequency power splitter circuit includes at least one microstrip line; the output terminals of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit, and the second slave amplifier circuit are respectively coupled to the first different-frequency power splitter circuit; where: The output terminal of the first main amplifier circuit is used to output a first radio frequency signal; the output terminal of the second main amplifier circuit is used to output a second radio frequency signal; the first radio frequency signal and the second radio frequency signal have different frequencies; the output terminals of the first slave amplifier circuit and the second slave amplifier circuit are used to output a radio frequency combined signal, and the radio frequency combined signal includes the first radio frequency signal and / or the second radio frequency signal; The first output terminal of the first different-frequency power splitter circuit is used to assist in realizing the power combination of the first radio frequency signal; the second output terminal of the first different-frequency power splitter circuit is used to assist in realizing the power combination of the second radio frequency signal.

2. The multi-channel power amplification architecture according to claim 1, wherein The first different-frequency power splitter circuit includes a first different-frequency power sub-circuit, a second different-frequency power sub-circuit, and a connecting microstrip line; the first different-frequency power sub-circuit is coupled to the second different-frequency power sub-circuit through the connecting microstrip line.

3. The multi-channel power amplification architecture according to claim 2, wherein The first end of the connecting microstrip line is coupled to the combining end of the first different-frequency power sub-circuit, and the second end of the connecting microstrip line is coupled to the combining end of the second different-frequency power sub-circuit; The output terminal of the first slave amplifier circuit is coupled to the combining end of the first different-frequency power sub-circuit; The output terminal of the first main amplifier circuit is coupled to the first splitting end of the first different-frequency power sub-circuit, and the second splitting end of the first different-frequency power sub-circuit is the second output terminal of the first different-frequency power splitter circuit; The output terminal of the second slave amplifier circuit is coupled to the combining end of the second different-frequency power sub-circuit; The output terminal of the second main amplifier circuit is coupled to the first splitting end of the second different-frequency power sub-circuit, and the second splitting end of the second different-frequency power sub-circuit is the first output terminal of the first different-frequency power splitter circuit.

4. The multi-channel power amplification architecture according to claim 3, wherein The first different-frequency power sub-circuit includes a first microstrip line, a second microstrip line, a first isolation circuit, and a second isolation circuit; the second different-frequency power sub-circuit includes a third microstrip line, a fourth microstrip line, a third isolation circuit, and a fourth isolation circuit; The first ends of the first microstrip line and the second microstrip line are coupled and used as the combining end of the first different-frequency power sub-circuit; the second end of the first microstrip line is used as the first splitting end of the first different-frequency power sub-circuit; the second end of the second microstrip line is used as the second splitting end of the first different-frequency power sub-circuit; The first ends of the third microstrip line and the fourth microstrip line are coupled and used as the combining end of the second different-frequency power sub-circuit; the second end of the third microstrip line is used as the first splitting end of the second different-frequency power sub-circuit; the second end of the fourth microstrip line is used as the second splitting end of the second different-frequency power sub-circuit; The first isolation circuit is coupled to the first shunt end of the first different-frequency power sub-circuit; the second isolation circuit is coupled to the second shunt end of the first different-frequency power sub-circuit; the third isolation circuit is coupled to the first shunt end of the second different-frequency power sub-circuit; the fourth isolation circuit is coupled to the second shunt end of the second different-frequency power sub-circuit; where: The first isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; The second isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal; The third isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal; The fourth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal.

5. The multi-channel power amplification architecture according to claim 2, wherein The first end of the connecting microstrip line is coupled to the combined end of the first different-frequency power sub-circuit, and the second end of the connecting microstrip line is coupled to the combined end of the second different-frequency power sub-circuit; The output end of the first slave amplifier circuit is coupled to the combined end of the first different-frequency power sub-circuit; The output end of the first main amplifier circuit is coupled to the first shunt end of the first different-frequency power sub-circuit and serves as the first output end of the first different-frequency power dividing circuit; The output end of the second slave amplifier circuit is coupled to the combined end of the second different-frequency power sub-circuit; The output end of the second main amplifier circuit is coupled to the first shunt end of the second different-frequency power sub-circuit and serves as the second ou tput end.

6. The multi-channel power amplification architecture according to claim 5, wherein, The first different-frequency power dividing circuit includes a fifth microstrip line, a sixth microstrip line L6, and a fifth isolation circuit; the second different-frequency power dividing circuit includes a seventh microstrip line L7, an eighth microstrip line L8, and a sixth isolation circuit; The first end of the fifth microstrip line serves as the combined end of the first different-frequency power sub-circuit, and the second end of the fifth microstrip line serves as the first shunt end of the first different-frequency power sub-circuit; the output end of the first main amplifier circuit is coupled to the second end of the fifth microstrip line through the sixth microstrip line; The first end of the seventh microstrip line serves as the combined end of the second different-frequency power sub-circuit, and the second end of the seventh microstrip line serves as the first shunt end of the second different-frequency power sub-circuit; the output end of the second main amplifier circuit is coupled to the second end of the seventh microstrip line through the eighth microstrip line; The fifth isolation circuit is coupled to the first shunt end of the first different-frequency power sub-circuit; the sixth isolation circuit is coupled to the first shunt end of the second different-frequency power sub-circuit; where: The fifth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; The sixth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal.

7. The multi-channel power amplification architecture according to claim 2, characterized in that The first shunt terminal of the first different-frequency power splitter circuit is coupled to the output terminal of the first main amplifier circuit, the second shunt terminal of the first different-frequency power splitter circuit is coupled to the output terminal of the second main amplifier circuit, and the combined terminal of the first different-frequency power splitter circuit and the output terminal of the first slave amplifier circuit are respectively coupled to the first end of the connecting microstrip line; The combined terminal of the second different-frequency power splitter circuit and the output terminal of the second slave amplifier circuit are respectively coupled to the second end of the connecting microstrip line, the first shunt terminal of the second different-frequency power splitter circuit serves as the first output terminal of the first different-frequency power splitter circuit, and the second shunt terminal of the second different-frequency power splitter circuit serves as the second output terminal of the first different-frequency power splitter circuit.

8. The multi-channel power amplification architecture according to claim 7, wherein, The first different-frequency power splitter circuit includes a ninth microstrip line, a tenth microstrip line, a seventh isolation circuit, and an eighth isolation circuit; the second different-frequency power splitter circuit includes an eleventh microstrip line, a twelfth microstrip line, a ninth isolation circuit, and a tenth isolation circuit; The first end of the ninth microstrip line serves as the first shunt terminal of the first different-frequency power splitter circuit, the second end of the ninth microstrip line is coupled to the second end of the tenth microstrip line and then serves as the combined terminal of the first different-frequency power splitter circuit, and the first end of the tenth microstrip line serves as the second shunt terminal of the first different-frequency power splitter circuit; the first end of the eleventh microstrip line serves as the first shunt terminal of the second different-frequency power splitter circuit, the second end of the eleventh microstrip line is coupled to the second end of the twelfth microstrip line and then serves as the combined terminal of the second different-frequency power splitter circuit, and the first end of the twelfth microstrip line serves as the second shunt terminal of the second different-frequency power splitter circuit; The seventh isolation circuit is coupled to the first shunt terminal of the first different-frequency power splitter circuit; the eighth isolation circuit is coupled to the second shunt terminal of the first different-frequency power splitter circuit; the ninth isolation circuit is coupled to the first shunt terminal of the second different-frequency power splitter circuit; the tenth isolation circuit is coupled to the second shunt terminal of the second different-frequency power splitter circuit; where: The seventh isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; The eighth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal; The ninth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; The tenth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal.

9. The multi-channel power amplification architecture according to claim 3 or 5 or 7, characterized in that The first different-frequency power splitter circuit and / or the second different-frequency power splitter circuit is a microstrip different-frequency power splitter circuit; the microstrip different-frequency power splitter circuit includes a twenty-third microstrip line, a twenty-fourth microstrip line, a twenty-fifth microstrip line, a twenty-sixth microstrip line, a twenty-seventh microstrip line, a twenty-eighth microstrip line, and a twenty-ninth microstrip line; the electrical lengths of the twenty-fourth microstrip line and the twenty-fifth microstrip line are one-quarter wavelength of the second radio frequency signal; The electrical lengths of the twenty-sixth microstrip line and the twenty-seventh microstrip line are one-quarter wavelength of the first radio frequency signal; where: The first end of the twenty-third microstrip line serves as the first branch end of the microstrip different-frequency power divider circuit, and the second end of the twenty-third microstrip line is respectively coupled to the first end of the twenty-fourth microstrip line and the first end of the twenty-fifth microstrip line; The first end of the twenty-eighth microstrip line serves as the second branch end of the microstrip different-frequency power divider circuit, and the second end of the twenty-eighth microstrip line is respectively coupled to the first end of the twenty-seventh microstrip line and the first end of the twenty-sixth microstrip line; The second ends of the twenty-fifth microstrip line and the twenty-sixth microstrip line are respectively coupled to the first end of the twenty-ninth microstrip line, and the second end of the twenty-ninth microstrip line serves as the combining end of the microstrip different-frequency power divider circuit.

10. The multi-channel power amplification architecture according to claim 1, characterized in that, The first different-frequency power divider circuit includes a coupled bridge, a thirteenth microstrip line, a fourteenth microstrip line, a fifteenth microstrip line, a sixteenth microstrip line, a seventeenth microstrip line, an eighteenth microstrip line, an eleventh isolation circuit, a twelfth isolation circuit, a thirteenth isolation circuit, and a fourteenth isolation circuit; where: The first ends of the thirteenth microstrip line and the fifteenth microstrip line are coupled to the eleventh isolation circuit and then coupled to the output end of the first main amplifier circuit, and the second end of the thirteenth microstrip line is respectively coupled to the output end of the first slave amplifier circuit and the first end of the coupled bridge; the first ends of the fourteenth microstrip line and the fifteenth microstrip line are coupled to the twelfth isolation circuit and then serve as the second output end of the first different-frequency power divider circuit, and the second end of the fourteenth microstrip line is coupled to the second end of the coupled bridge; The first end of the sixteenth microstrip line is respectively coupled to the output end of the second slave amplifier circuit and the third end of the coupled bridge, and the second end of the sixteenth microstrip line and the first end of the eighteenth microstrip line are coupled to the thirteenth isolation circuit and then coupled to the output end of the second main amplifier circuit; the first end of the seventeenth microstrip line is coupled to the fourth end of the coupled bridge, and the second end of the seventeenth microstrip line and the second end of the eighteenth microstrip line are coupled to the fourteenth isolation circuit and then serve as the first output end of the first different-frequency power divider circuit; The eleventh isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; The twelfth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal; The thirteenth isolation circuit presents a short-circuit characteristic to the first radio frequency signal and an open-circuit characteristic to the second radio frequency signal; The fourteenth isolation circuit presents a short-circuit characteristic to the second radio frequency signal and an open-circuit characteristic to the first radio frequency signal; Between the first end and the second end of the coupled bridge are mutual coupling ends, and between the first end and the fourth end of the coupled bridge are mutual through ends.

11. The multi-channel power amplification architecture according to claim 10, wherein The coupled bridge includes a nineteenth microstrip line, a twentieth microstrip line, a twenty-first microstrip line, and a twenty-second microstrip line; where: The first end of the nineteenth microstrip line is coupled to the first end of the twentieth microstrip line and then serves as the first end of the coupled bridge; The second end of the nineteenth microstrip line is coupled to the first end of the twenty-first microstrip line and serves as the second end of the coupled bridge; The second end of the twentieth microstrip line is coupled to the first end of the twenty-second microstrip line and serves as the third end of the coupled bridge; The second end of the twenty-first microstrip line is coupled to the second end of the twenty-second microstrip line and serves as the fourth end of the coupled bridge.

12. The multi-channel power amplification architecture according to any one of claims 1-11, characterized in that, The multi-channel power amplification architecture further includes a second different-frequency power splitter circuit; the first output end of the first different-frequency power splitter circuit is coupled to the first branch end of the second different-frequency power splitter circuit, and the first output end of the first different-frequency power splitter circuit is coupled to the second branch end of the second different-frequency power splitter circuit; the combining end of the second different-frequency power splitter circuit is used to output at least one of the following signals: the power combining signal of the first radio frequency signal, the power combining signal of the second radio frequency signal; the second different-frequency power splitter circuit is a different-frequency power splitter circuit based on microstrip lines.

13. The multi-channel power amplification architecture according to any one of claims 1-12, characterized in that, At least one of the first main amplification circuit, the second main amplification circuit, the first slave amplification circuit, and the second slave amplification circuit is a power combining circuit; the power combining circuit includes a plurality of amplification branch circuits.

14. The multi-channel power amplification architecture according to claim 13, wherein The power combining circuit includes at least one of the following: Doherty circuit, inverse Doherty circuit, asymmetric Doherty circuit, LMBA circuit, SLMBA circuit, balun voltage type combining circuit, Chireix amplification circuit, and out-of-phase modulation amplification circuit.

15. The multi-channel power amplification architecture according to any one of claims 1-14, characterized in that, The multi-channel power amplification architecture further includes a splitter circuit and a first coupler; The splitter circuit is used for: inputting the first radio frequency signal and the second radio frequency signal, and respectively outputting the first radio frequency signal to the input end of the first main amplification circuit and the first end of the first coupler, and respectively outputting the second radio frequency signal to the input end of the second main amplification circuit and the third end of the first coupler; The second end and the fourth end of the first coupler are used for: respectively outputting the radio frequency combined frequency signal to the input ends of the first slave amplification circuit and the second slave amplification circuit.

16. The multi-channel power amplification architecture according to claim 15, wherein The splitter circuit includes a first different-frequency power splitter and a second different-frequency power splitter; the first different-frequency power splitter and / or the second different-frequency power splitter is a different-frequency power splitter circuit based on microstrip lines; The combining end of the first different-frequency power splitter is used to input the first radio frequency signal and the second radio frequency signal; the first branch end of the first different-frequency power splitter outputs one path of the first radio frequency signal; The second branch end of the first different-frequency power splitter is used to output one path of the second radio frequency signal; The summing end of the first different-frequency power splitter is used to input the first radio frequency signal and the second radio frequency signal; The first branch end of the second different-frequency power splitter outputs one path of the first radio frequency signal; The second branch end of the second different-frequency power splitter is used to output one path of the second radio frequency signal.

17. The multi-channel power amplification architecture according to claim 15, characterized in that, The splitter circuit includes a third different-frequency power splitter, a third power splitter, and a fourth power splitter; the first branch end and the second branch end of the third different-frequency power splitter are respectively coupled to the combining end of the third power splitter and the combining end of the fourth power splitter; The third different-frequency power splitter is a different-frequency power splitting circuit based on a microstrip line; wherein: The combining end of the third different-frequency power splitter is used to input the first radio frequency signal and the second radio frequency signal; the first splitting end of the third different-frequency power splitter is used to output the first radio frequency signal; the second splitting end of the third different-frequency power splitter is used to output the second radio frequency signal; The first splitting end and the second splitting end of the third power splitter are respectively used to output a path of the first radio frequency signal; The first splitting end and the second splitting end of the fourth power splitter are respectively used to output a path of the second radio frequency signal.

18. The multi-channel power amplification architecture according to any one of claims 1-17, characterized in that, The first radio frequency signal and / or the second radio frequency signal includes radio frequency signals of at least one sub-band.

19. The multi-channel power amplification architecture according to any one of claims 1-18, characterized in that, The minimum operating power point of the first main amplifier circuit is less than the minimum operating power point of the first slave amplifier circuit and the minimum operating power point of the second slave amplifier circuit; the minimum operating power point of the second main amplifier circuit is less than the minimum operating power point of the first slave amplifier circuit and the minimum operating power point of the second slave amplifier circuit; the minimum operating power point of the first slave amplifier circuit is less than, equal to or greater than the minimum operating power point of the second slave amplifier circuit.

20. The multi-channel power amplification architecture according to claim 19, wherein The multi-channel power amplification architecture further includes a driving circuit or a control circuit, and the minimum operating power points of the first main amplifier circuit, the second main amplifier circuit, the first slave amplifier circuit and the second slave amplifier circuit are controlled based on the driving circuit or the control circuit.

21. The multi-channel power amplification architecture according to any one of claims 1-20, characterized in that, At least one of the plurality of microstrip lines is a microstrip line with a three-dimensional stacked structure.

22. A radio frequency generating device, characterized in that, It includes a radio frequency generation circuit and the multi-channel power amplification architecture according to any one of claims 1-21; the radio frequency generation circuit is used to output a radio frequency signal to the multi-channel power amplification architecture; the power amplifier is used to perform power synthesis amplification according to the radio frequency signal.

23. A communication system, characterized in that, It includes a baseband processing device and the radio frequency generation device according to claim 22; the baseband processing device is used to output a baseband signal to the radio frequency generation device; the radio frequency generation device is used to obtain a radio frequency signal according to the baseband signal and perform power synthesis amplification on the radio frequency signal.

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