Deposition device

Abstract

A deposition device, comprising a chamber mechanism (100) and a gas guide mechanism (200), wherein the chamber mechanism (100) is configured to rotate around a first axis; the chamber mechanism (100) comprises working chambers (110); in the direction perpendicular to the first axis, each working chamber (110) is provided with two partition plates (120) arranged opposite to each other; the working chamber (110) comprises a deposition wall surface (130); the deposition wall surface (130) is arranged between the partition plates (120); and each deposition wall surface (130) is perpendicular to the first axis; the gas guide mechanism (200) comprises guide portions (210); the guide portions (210) are configured to move a gas to the deposition wall surfaces (130), wherein a first direction is the flow direction when the gas enters the working chamber (110), a second direction is the linear speed direction of the working chamber (110) located at the position of the guide portion (210), an included angle A is formed between the first direction and the second direction, and the included angle A satisfies: 0°<A<90°. By changing the flow directions of the gas when the gas enters the working chambers (110), the gas is prevented from being blocked by the partition plates (120), and the reaction rate is increased and the coating effect is improved without increasing the production cost.

Description

Deposition device Technical Field

[0001] The present application relates to the field of film coating technology, and in particular to a deposition device. Background Art

[0002] The uniformity of chemical vapor deposition (CVD) films is closely affected by the flow distribution of the reaction gases. Although ALD films primarily rely on surface chemical reactions and are self-limiting, the ideal ALD process has limited dependence on the flow distribution of the reaction gases. However, in the actual use of high-speed mass production equipment, excessive reaction gases or insufficient purge time can lead to reactions similar to CVD. In this case, the uniformity of the film is related to the flow distribution of the gases. Current technologies typically avoid CVD by increasing the purge gas flow rate and time, but this reduces production efficiency and increases production costs, adversely affecting the application of ALD technology in industrial high-speed mass production. Multiple reaction chambers are separated by partitions, allowing simultaneous processing of multiple reaction chambers. Due to the rotation of the reaction chamber, when the gas is injected at an angle, it is blocked by the partition, resulting in large unevenness in the coating and reducing reaction efficiency.

[0003] Summary of the Invention

[0004] The main purpose of this application is to propose a deposition device, which aims to solve the technical problem that the gas will be blocked by the partition, resulting in large unevenness in the coating and reducing the reaction efficiency.

[0005] To achieve the above objectives, the present application proposes a deposition device, which is used to coat a raw material by introducing gas, and the deposition device includes:

[0006] a chamber mechanism configured to rotate about a first axis, the chamber mechanism comprising a working chamber, the working chamber being provided with two partitions arranged opposite to each other in a direction perpendicular to the first axis, the working chamber comprising a deposition wall surface, the deposition wall surface being provided between the partitions, and each deposition wall surface being perpendicular to the first axis;

[0007] a gas guide mechanism, the gas guide mechanism comprising a guide portion, the guide portion being configured to move the gas to the deposition wall surface;

[0008] The first direction is the flow direction of the gas when it enters the working chamber, the second direction is the linear velocity direction of the working chamber at the position of the guide portion, and the angle A between the first direction and the second direction satisfies: 0° <A<90°。

[0009] In some embodiments, the angle A satisfies: 30°≤A≤60°.

[0010] In some embodiments, the flow rate of the gas is Va, the linear velocity of the working chamber at the point where the gas enters is Vb, and the angle A satisfies: cosA=Va / Vb.

[0011] In some embodiments, the air guide mechanism includes a plurality of guide portions, and each guide portion is circumferentially distributed around the first axis;

[0012] The chamber mechanism includes a plurality of working chambers, and the working chambers are circumferentially distributed around the first axis.

[0013] In some embodiments, the gas includes a reaction gas and a purge gas. The reaction gas is used to coat the raw material, and the purge gas is used to remove excess reaction gas. Each guide portion introduces the reaction gas and the purge gas respectively.

[0014] In some embodiments, the chamber mechanism includes an exhaust hole, the axis direction of the exhaust hole is collinear with the first axis, and the exhaust hole is used to extract gas.

[0015] In some embodiments, the guide portion includes a plurality of guide holes, the second axis is the axis of each of the guide holes, and the second axis is parallel to the first direction.

[0016] A second aspect of the present application further provides a deposition device, which is used to coat a raw material by introducing gas, and the deposition device includes:

[0017] A chamber mechanism configured to rotate about a first axis, the chamber mechanism comprising a working chamber, the working chamber being provided with two partitions arranged opposite to each other in a direction perpendicular to the first axis, the working chamber comprising a deposition wall, the deposition wall being provided between the partitions, each deposition wall being perpendicular to the first axis, and the deposition wall comprising a working area;

[0018] a gas guide mechanism, the gas guide mechanism comprising a guide portion, the guide portion being configured to move the gas to the deposition wall surface;

[0019] Among them, the first direction is the flow direction of the gas when it enters the working chamber, the second direction is the tangent direction of the rotation direction of the working chamber located at the position of the guide part, the first direction and the second direction are at an angle B, and the angle B satisfies: 0°≤B≤180°, the working area is provided with a first side and a second side arranged opposite to each other, along the second direction, the second side is arranged below the first side, and the direction of the second side and the second direction are at an angle C, and the angle C satisfies: 0°≤C≤90°.

[0020] In some embodiments, the included angle B satisfies: 60° ≤ B ≤ 120°;

[0021] The included angle C satisfies: 30° ≤ C ≤ 60°.

[0022] In some embodiments, the included angle B satisfies: B = 90°, the flow velocity of the gas is Va, the linear velocity of the working chamber is Vb, and the included angle C satisfies: tanC = Vb / Va.

[0023] Compared with the prior art, the beneficial effects of the present application are as follows:

[0024] In the technical solution of the present application, the first direction is the flow direction when the gas enters the working chamber, the second direction is the linear velocity direction of the working chamber at the position of the guiding part, and the included angle between the first direction and the second direction is angle A. In the prior art, angle A satisfies: A = 90°. When the gas enters the working chamber, the obtuse angle between the flow direction relative to the chamber mechanism and the linear velocity direction of the working chamber at the position of the guiding part is relatively large, so that the range of the gas directly hitting the baffle is relatively large, and the area of the included angle between the baffle and the deposition wall surface that the gas cannot cover is relatively large. In this embodiment, through the action of the guiding mechanism, angle A satisfies: 0° < A < 90°. When the gas enters the working chamber, the obtuse angle between the flow direction relative to the chamber mechanism and the linear velocity direction of the working chamber at the position of the guiding part is relatively small, so that in the working state, that is, when the chamber mechanism rotates around the first axis, the acute angle between the movement direction of the gas relative to the chamber mechanism and the second direction is relatively large, making the gas flow smoothly, so as to avoid the gas not covering the included angle between the baffle and the deposition wall surface, expanding the coverage area of the gas, and reducing the gas directly hitting the baffle, so as to reduce the turbulence generated between the baffle and the deposition wall surface, so that the gas forms a flow layer between the deposition wall surfaces, increasing the reaction rate without increasing the production cost, improving the uniformity of the airflow in the working chamber, and improving the coating uniformity.

[0025] Furthermore, when the chamber mechanism rotates around the first axis, the included angle between the movement direction of the gas relative to the chamber mechanism and the second direction is 90°, making the gas flow smoothly, so as to avoid the gas not covering the included angle between the baffle and the deposition wall surface, expanding the coverage area of the gas, and reducing the gas directly hitting the baffle, so as to reduce the turbulence generated between the baffle and the deposition wall surface, so that the gas forms a flow layer between the deposition wall surfaces, further improving the uniformity of the airflow in the working chamber, increasing the reaction rate further without increasing the production cost, and thus further improving the coating uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0027] FIG1 is a side view of the chamber mechanism in the first embodiment of the present application; wherein Va is the flow velocity of the gas when entering the working chamber, and Vd is the angular velocity movement direction of the working chamber;

[0028] FIG2 is a schematic diagram showing the flow velocity Va of the gas entering the working chamber, the linear velocity Vb of the working chamber at the point where the gas enters, and the direction Vc of movement of the gas relative to the working chamber in the first embodiment of the present application; wherein the angle A is the angle between the first direction and the second direction;

[0029] FIG3 is a cross-sectional view of the air guide mechanism in the first embodiment of the present application; the air guide mechanism includes a guide portion and a guide hole, and shows a first direction and a second direction, wherein an angle A is the angle between the first direction and the second direction;

[0030] FIG4 is a partial enlarged view of the chamber mechanism in the second embodiment of the present application; the deposition wall includes the working area, and Vd is the angular velocity movement direction of the working chamber;

[0031] FIG5 is a schematic diagram showing the flow velocity Va of the gas entering the working chamber, the linear velocity Vb of the working chamber at the point where the gas enters, and the direction Vc of movement of the gas relative to the working chamber in the second embodiment of the present application; wherein the angle B is the angle between the first direction and the second direction;

[0032] FIG6 is a partial enlarged view of the deposition device in the second embodiment of the present application; the working area includes the second side, and the first direction and the second direction are shown therein; wherein the angle B is the angle between the first direction and the second direction;

[0033] FIG7 is a side view of a deposition apparatus in the third embodiment of the present application; wherein a raw material is placed on the deposition wall, and Vd is the angular velocity direction of the working chamber;

[0034] FIG8 is a side view of a deposition apparatus according to a fourth embodiment of the present application; wherein the working areas are arranged at intervals, and Vd is the angular velocity direction of the working chamber;

[0035] FIG9 is a side view of a deposition apparatus according to the fifth embodiment of the present application; wherein Vd is the angular velocity direction of the working chamber;

[0036] Figure 10 is a side view of the deposition device in the prior art, which shows the range that the gas on the deposition wall cannot cover and the range of the gas directly hitting the partition, Vc is the movement direction of the gas relative to the working chamber, and Vd is the angular velocity movement direction of the working chamber.

[0037] Description of Figure Numbers:

[0038] Deposition device 10; chamber mechanism 100; working chamber 110; partition 120; deposition wall 130; working area 131; first side 1311; second side 1312; exhaust hole 140; gas guide mechanism 200; guide portion 210; guide hole 220; raw material 20; guide device 30; working chamber device 40; partition device 50; deposition wall device 60; first direction X; second direction Y.

[0039] The realization of the objectives, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0041] It should be noted that if the embodiments of the present application involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0042] In addition, when an element is described as being “fixed to” another element, it may be directly on the other element or one or more intervening elements may be present therebetween. When an element is described as being “connected to” another element, it may be directly connected to the other element or one or more intervening elements may be present therebetween.

[0043] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of such features. In addition, if "and / or", "and / or" or "and / or" appear in the full text, its meaning includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0044] In the actual situation of high-speed mass production equipment, due to excessive reaction gas or insufficient purge time, a reaction similar to chemical vapor deposition may occur. At this time, the uniformity of the film is related to the flow field distribution of the gas. Current technology usually avoids chemical vapor deposition by increasing the purge gas flow rate and time, but doing so will reduce production efficiency and increase production costs, which will have an adverse effect on the application of atomic layer deposition technology in industrial high-speed mass production. After separating multiple reaction chambers by partitions, multiple reaction chambers can be processed at the same time. Since the reaction chamber rotates, when the direction of movement of the gas relative to the reaction chamber is obliquely injected, the gas will be blocked by the partition, resulting in large unevenness in the coating, reducing the reaction efficiency.

[0045] To achieve the above-mentioned objectives, referring to Figures 1 to 3 and Figure 7, the present application proposes a deposition device 10, which is used to coat a raw material 20 by introducing gas. The deposition device 10 includes a chamber mechanism 100 and a gas guide mechanism 200. The outer contour of the deposition device 10 can be a variety of structures. In some embodiments, the deposition device 10 can be a rectangular parallelepiped. In other embodiments, the deposition device 10 can be a cylinder. In other embodiments, the deposition device 10 can be a polygon, etc., depending on the actual situation. The embodiment of the present application takes a cylindrical deposition device 10 as an example.

[0046] The outer contour of the chamber mechanism 100 can be in a variety of structures. In some embodiments, the chamber mechanism 100 can be a rectangular parallelepiped. In other embodiments, the chamber mechanism 100 can be a cylindrical body. In other embodiments, the chamber mechanism 100 can be a polygonal body, etc., depending on the actual situation. The embodiment of the present application takes a cylindrical chamber mechanism 100 as an example. The chamber mechanism 100 is configured to rotate around a first axis, and the first axis is the axis of the cylindrical chamber mechanism 100. The chamber mechanism 100 includes a working chamber 110. In some embodiments, the chamber mechanism 100 can be a rectangular parallelepiped. In other embodiments, the chamber mechanism 100 can be a cylindrical body. In other embodiments, the chamber mechanism 100 can be a polygonal body, etc., depending on the actual situation. The embodiment of the present application takes a chamber mechanism 100 including a fan-shaped column as an example. Along a direction perpendicular to the first axis, the working chamber 110 is provided with two partitions 120 arranged opposite to each other, and the length direction of each partition 120 is perpendicular to the direction of the first axis. The working chamber 110 includes a deposition wall 130, which is used to place the raw material 20 for coating the raw material 20. The deposition wall 130 is arranged between each partition 120, and each deposition wall 130 is perpendicular to the first axis. In some embodiments, each partition 120 is used to separate the interval between the deposition wall 130 and the non-deposition wall 130 to isolate excess gas to ensure normal operation. The deposition wall 130 includes a variety of shapes and structures. In some embodiments, the chamber mechanism 100 can be rectangular. In other embodiments, the chamber mechanism 100 can be circular. In other embodiments, the chamber mechanism 100 can be polygonal, etc., depending on the actual situation. The embodiment of the present application takes a fan-shaped chamber mechanism 100 as an example. The deposition wall 130 includes a variety of wall structures. It should be noted that the deposition wall 130 can be a straight surface or a curved surface. In some embodiments, the deposition wall 130 includes multiple fixing devices for fixing the raw material 20. Furthermore, the number of fixing devices can be determined according to actual conditions. For example, the number of fixing devices can be two, three, four, etc.

[0047] The gas guide mechanism 200 includes a guide portion 210, which is configured to diffuse the gas to the deposition wall 130 so that the raw material 20 in the deposition wall 130 is coated, and the flow direction of the gas when the gas enters the chamber mechanism 100 is guided by the guide portion 210. In some embodiments, the guide portion 210 includes a first opening arranged in a direction perpendicular to the first axis and an air guide plate provided at the first opening, and the air guide plate is used to guide the flow direction of the gas when the gas enters the chamber mechanism 100. Further, the guide portion 210 includes a dispersion hole plate provided on the first opening for uniformly diffusing the gas to improve the uniformity of gas diffusion. Further, the number of air guide plates is multiple. The number of air guide plates can be determined according to actual conditions. For example, the number of air guide plates can be two, three, four, and so on.

[0048] Referring to FIGS. 2 and 3, the first direction X is the flow direction of the gas when it enters the working chamber 110, the second direction Y is the linear velocity direction of the working chamber 110 at the position of the guiding portion 210, and the included angle between the first direction X and the second direction Y is angle A, and angle A satisfies: 0° < A < 90°. The angle of angle A can be determined according to actual needs. Exemplarily, the angle of angle A can be 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80°, etc. It should be noted that since the chamber mechanism 100 rotates around the first axis and the gas has a flow direction relative to the ground when entering the chamber mechanism 100, during the film coating process, the motion vector of the gas relative to the chamber is the cross product of the vector of the gas motion and the vector of the opposite direction of the linear velocity motion of the chamber mechanism 100 where the gas is located. In the prior art, referring to FIG. 10, angle A satisfies: A = 90°, that is, the motion direction of the gas is perpendicular to the linear velocity direction of the working chamber device 40 at the position of the guiding device 30. The included angle between the flow direction of the gas when it enters the working chamber device 40 relative to the working chamber device 40 and the linear velocity direction of the working chamber device 40 at the position of the guiding device 30 is a large obtuse angle, so that the range of the gas directly hitting the partition device 50 is large, and the area of the included angle between the partition device 50 and the deposition wall surface device 60 that the gas cannot cover is large, resulting in a reduction in the reaction rate, a reduction in the uniformity of the gas flow in the working chamber device 40, and a reduction in the uniformity of the film coating of the raw material 20. In this embodiment, through the action of the guiding mechanism, angle A is made to satisfy: 0° < A < 90°, that is, the included angle between the flow direction of the gas when it enters the working chamber 110 and the linear velocity direction of the working chamber 110 at the position of the guiding portion 210 is a small obtuse angle, so that during the working state, that is, when the chamber mechanism 100 rotates around the first axis, the included angle between the motion direction of the gas relative to the chamber mechanism 100 and the second direction Y is a large acute angle, making the gas flow smoothly, so as to avoid the gas not covering the included angle between the partition 120 and the deposition wall surface 130, expanding the coverage area of the gas, and reducing the direct hitting of the gas on the partition 120, so as to reduce the turbulence generated between the partition 120 and the deposition wall surface 130, so that the gas forms a flow layer between the deposition wall surfaces 130. In this embodiment, without increasing the production cost, the reaction rate is increased, the uniformity of the gas flow in the working chamber 110 is improved, and the film coating uniformity is improved.Furthermore, when the chamber mechanism 100 rotates around the first axis, the angle between the movement direction of the gas relative to the chamber mechanism 100 and the second direction Y is 90°, so that the gas flows smoothly to avoid the gas being unable to cover the angle between the partition 120 and the deposition wall 130, expand the coverage area of ​​the gas, and reduce the gas directly hitting the partition 120, so as to reduce the turbulence generated between the partition 120 and the deposition wall 130, so that the gas forms a flow layer between the deposition wall 130, further improve the uniformity of the airflow in the working chamber 110, and further increase the reaction rate without increasing production costs, thereby further improving the uniformity of the coating.

[0049] In some embodiments, angle A satisfies: 30°≤A≤60°. The specific angle of angle A can be determined according to actual conditions. For example, angle A can be set to 30°, 35°, 40°, 45°, 50°, 55°, 60°, etc. By further adjusting the range of angle A, the gas flow is smooth to avoid the gas being unable to cover the angle between the partition 120 and the deposition wall 130, thereby expanding the coverage area of ​​the gas and reducing the gas directly hitting the partition 120 to reduce the turbulence generated between the partition 120 and the deposition wall 130, so that the gas forms a flow layer between the deposition wall 130, further improving the uniformity of the gas flow in the working chamber 110, and further increasing the reaction rate without increasing production costs, thereby further improving the uniformity of the coating.

[0050] Referring to Figure 2, the gas flow rate is Va, the linear velocity of the working chamber 110 at the gas entry point is Vb, and the angle A satisfies: cosA = Va / Vb, so that the angle between the direction of movement of the gas relative to the chamber mechanism 100 and the second direction Y is 90°, which makes the gas flow smoothly, improves the uniformity of the gas flow in the working chamber 110, and further increases the reaction rate without increasing production costs, thereby further improving the uniformity of the coating. In some embodiments, the air guide plate includes two guide surfaces arranged opposite to each other, and the gas abuts the guide surfaces, and the guide surfaces are used to allow the gas to enter the chamber mechanism 100 along the guide surfaces. Furthermore, the angle D between each guide surface and the linear velocity direction of the working chamber 110 at the gas entry point satisfies the same angle as the angle A, so that the angle A satisfies: cosA = Va / Vb.

[0051] The gas guide mechanism 200 includes a plurality of guide portions 210, and the specific number of the guide portions 210 can be determined according to actual conditions. For example, the guide portions 210 can be set to two, three, four, etc., and each guide portion 210 is distributed circumferentially around the first axis. It should be noted that the guide portions 210 can be arranged at even intervals or at uneven intervals. The chamber mechanism 100 includes a plurality of working chambers 110, and the specific number of the working chambers 110 can be determined according to actual conditions. For example, the working chambers 110 can be set to two, three, four, etc., and each working chamber 110 is distributed circumferentially around the first axis. It should be noted that the guide portions 210 can be arranged at even intervals or at uneven intervals. In some embodiments, the number of the guide portions 210 is the same as the number of the working chambers 110, so as to be suitable for coating multiple working chambers 110 at the same time.

[0052] The gases include reactive gas and purge gas. The reactive gas is used to coat the raw material 20, and the purge gas is used to remove excess reactive gas. Each guide portion 210 introduces reactive gas and purge gas, respectively. The gases introduced between adjacent guide portions 210 are reactive gas and purge gas, respectively. That is, for the same working chamber 110, after each reactive gas coating operation, a purge gas removal operation is required to ensure smooth gas coating. In some embodiments, if multiple reactive gases are required for coating in the same chamber, a purge gas removal operation is required after each reactive gas operation to ensure that excess reactive gases do not interact with each other.

[0053] The chamber mechanism 100 includes an exhaust hole 140, the axial direction of the exhaust hole 140 is collinear with the first axis, and the exhaust hole 140 is used to extract gas to ensure that the flow direction of the gas in the chamber mechanism 100 is stable and that excess reaction gas is removed to increase the reaction rate, improve the uniformity of the airflow in the working chamber 110, and improve the uniformity of the coating.

[0054] Referring to FIG. 3 , the guide portion 210 includes a plurality of guide holes 220 . The second axis is the axis of each guide hole 220 , and the second axis is parallel to the first direction X. The guide holes 220 are used to guide the flow direction of the gas as it enters the chamber mechanism 100 . The number of guide holes 220 can be determined based on practical circumstances. For example, the number of guide holes 220 can be two, three, four, etc. In other embodiments, the angle between the axis of each guide hole 220 and the linear velocity direction of the working chamber 110 at the gas entry point satisfies cosA=Va / Vb, such that the angle A satisfies: cosA=Va / Vb.

[0055] The second aspect of the present application further provides a deposition device 10, referring to Figures 4 to 6 and Figures 8 and 9. The deposition device 10 is used to coat the raw material 20 by introducing gas. The deposition device 10 includes a chamber mechanism 100 and a gas guide mechanism 200. The outer contour of the deposition device 10 can be a variety of structures. In some embodiments, the deposition device 10 can be a rectangular parallelepiped. In other embodiments, the deposition device 10 can be a cylinder. In other embodiments, the deposition device 10 can be a polygon, etc., depending on the actual situation. The embodiment of the present application takes a cylindrical deposition device 10 as an example.

[0056] The outer contour of the chamber mechanism 100 can be in a variety of structures. In some embodiments, the chamber mechanism 100 can be a rectangular parallelepiped. In other embodiments, the chamber mechanism 100 can be a cylindrical body. In other embodiments, the chamber mechanism 100 can be a polygonal body, etc., depending on the actual situation. The embodiment of the present application takes a cylindrical chamber mechanism 100 as an example. The chamber mechanism 100 is configured to rotate around a first axis, and the first axis is the axis of the cylindrical chamber mechanism 100. The chamber mechanism 100 includes a working chamber 110. In some embodiments, the chamber mechanism 100 can be a rectangular parallelepiped. In other embodiments, the chamber mechanism 100 can be a cylindrical body. In other embodiments, the chamber mechanism 100 can be a polygonal body, etc., depending on the actual situation. The embodiment of the present application takes a chamber mechanism 100 including a fan-shaped column as an example. Along a direction perpendicular to the first axis, the working chamber 110 is provided with two partitions 120 arranged opposite to each other, and the length direction of each partition 120 is perpendicular to the direction of the first axis. The working chamber 110 includes a deposition wall 130, which is positioned between the partitions 120 and is perpendicular to the first axis. The deposition wall 130 includes a working area 131 for placing the raw material 20 for coating. In some embodiments, the partitions 120 are used to separate the deposition wall 130 from the non-deposition wall 130 to isolate excess gas and ensure normal operation. The deposition wall 130 can have a variety of shapes and structures. In some embodiments, the chamber structure 100 can be rectangular. In other embodiments, the chamber structure 100 can be circular. In other embodiments, the chamber structure 100 can be polygonal, etc., depending on the actual situation. The present embodiment uses a fan-shaped chamber structure 100 as an example. The deposition wall 130 can have a variety of wall structures. It should be noted that the deposition wall 130 can be flat or curved. In some embodiments, the deposition wall 130 includes multiple fixing devices for fixing the raw material 20. Furthermore, the number of fixing devices can be determined according to actual conditions. For example, the number of fixing devices can be two, three, four, etc.

[0057] The gas guide mechanism 200 includes a guide portion 210 , which is configured to move gas to the deposition wall 130 so that the raw material 20 in the deposition wall 130 is coated. The guide portion 210 guides the flow direction of the gas when the gas enters the chamber mechanism 100 .

[0058] 5 and 6 , the first direction X is the flow direction of the gas when entering the working chamber 110, the second direction Y is a tangent direction to the rotation direction of the working chamber 110, and the first direction X and the second direction Y are tangential to each other. Angle B is defined between the first direction X and the second direction Y, and angle B satisfies the following conditions: 0°≤B≤180°. The angle B can be determined based on actual needs. For example, angle B can be 0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80°, 90°, 100°, 110°, 120°, 130°, 140°, 150°, 160°, 170°, 180°, and so on. The working area 131 is provided with a first side 1311 and a second side 1312 which are arranged opposite to each other. Along the second direction Y, the second side 1312 is arranged below the first side 1311. The direction of the second side 1312 and the second direction Y form an angle C, and the angle C satisfies: 0 degrees ≤ C ≤ 90 degrees. The angle of the angle C can be determined according to actual needs. For example, the angle C can be 0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80°, 90°, etc., so that the angle between the flow direction of the gas relative to the working chamber 110 when entering the working chamber 110 and the direction of the second side 1312 is smaller, so that the working area 131 is completely covered by the flow direction of the gas, and the gas flows smoothly, so that the uncovered area of ​​the working area 131 is smaller, and the working area 131 is not affected by the turbulence generated between the partition 120 and the deposition wall 130, so that the gas forms a flow layer between the working areas 131, thereby increasing the reaction rate without increasing the production cost, improving the uniformity of the airflow in the working area 131, and improving the uniformity of the coating.

[0059] In some embodiments, angle B satisfies: 60 degrees ≤ B ≤ 120 degrees. The specific angle of angle B can be determined according to actual conditions. For example, angle A can be set to 60°, 70°, 80°, 90°, 100°, 110°, 120°, etc. Angle C satisfies: 30 degrees ≤ C ≤ 60 degrees. The specific angle of angle C can be determined according to actual conditions. For example, angle C can be set to 30°, 35°, 40°, 45°, 50°, 55°, 60°, etc. By further adjusting the range of angle B and angle C, the gas flow is smoothed, the uniformity of the airflow in the working chamber 110 is further improved, and the reaction rate is further increased without increasing production costs, thereby further improving the uniformity of the coating.

[0060] 5 and 6 , the gas flow rate is Va, the linear velocity of the working chamber 110 is Vb, and when the angle B satisfies: B = 90 degrees, the angle C satisfies: tanC = Vb / Va, so that the flow direction of the gas relative to the working chamber 110 when entering the working chamber 110 is parallel to the direction of the second side 1312, so that the gas flows smoothly, improves the uniformity of the gas flow in the working chamber 110, and further increases the reaction rate without increasing production costs, thereby further improving the uniformity of the coating.

[0061] It should be noted that other contents of the reaction gas and purge gas disclosed in this application can be found in the prior art and will not be described in detail here.

[0062] In addition, it should be noted that the preferred embodiments of the present application are given in the specification and drawings of this application. However, the present application can be implemented in many different forms and is not limited to the embodiments described in this specification. These embodiments are not intended to be additional limitations on the content of this application. The purpose of providing these embodiments is to make the understanding of the disclosure of this application more thorough and comprehensive. In addition, the above-mentioned technical features are further combined with each other to form various embodiments not listed above, which are all considered to be within the scope of the description of this application; further, it is obvious to those skilled in the art that improvements or changes can be made based on the above description, and all such improvements and changes should fall within the scope of protection of the claims attached to this application.

Claims

1. A deposition device, characterized in that: The deposition device is used to coat the raw material by introducing gas, and the deposition device includes: A chamber mechanism, the chamber mechanism is configured to rotate around a first axis, the chamber mechanism includes a working chamber, the working chamber is provided with two partitions arranged opposite to each other in a direction perpendicular to the first axis, the working chamber includes a deposition wall surface, the deposition wall surface is provided between the partitions, and each deposition wall surface is perpendicular to the first axis; a gas guiding mechanism, the gas guiding mechanism comprising a guiding portion, the guiding portion being configured to move the gas to the deposition wall surface; The first direction is the flow direction of the gas when it enters the working chamber, the second direction is the linear velocity direction of the working chamber at the position of the guide portion, and the angle A is between the first direction and the second direction, and the angle A satisfies: 0° <A<90°。 2. The deposition device according to claim 1, characterized in that: The angle A satisfies: 30°≤A≤60°.

3. The deposition device according to claim 1, characterized in that: The flow rate of the gas is Va, the linear velocity of the working chamber at the point where the gas enters is Vb, and the angle A satisfies: cosA=Va / Vb.

4. The deposition device according to claim 1, characterized in that: The air guide mechanism comprises a plurality of guide portions, each of which is circumferentially distributed around the first axis; The chamber mechanism includes a plurality of working chambers, and the working chambers are circumferentially distributed around the first axis.

5. The deposition device according to claim 4, characterized in that: The gas includes a reaction gas and a purge gas. The reaction gas is used to coat the raw material, and the purge gas is used to remove excess reaction gas. Each guide part introduces the reaction gas and the purge gas respectively.

6. The deposition device according to claim 1, characterized in that: The chamber mechanism comprises an exhaust hole, the axis direction of the exhaust hole is colinear with the first axis, and the exhaust hole is used to extract gas.

7. The deposition device according to claim 1, characterized in that: The guide portion includes a plurality of guide holes, the second axis is the axis of each of the guide holes, and the second axis is parallel to the first direction.

8. A deposition device, characterized in that: The deposition device is used to coat the raw material by introducing gas, and the deposition device includes: A chamber mechanism, wherein the chamber mechanism is configured to rotate around a first axis, the chamber mechanism comprises a working chamber, the working chamber is provided with two partitions arranged opposite to each other in a direction perpendicular to the first axis, the working chamber comprises a deposition wall surface, the deposition wall surface is provided between the partitions, each deposition wall surface is perpendicular to the first axis, and the deposition wall surface comprises a working area; a gas guiding mechanism, the gas guiding mechanism comprising a guiding portion, the guiding portion being configured to move the gas to the deposition wall surface; Among them, the first direction is the flow direction of the gas when it enters the working chamber, the second direction is the tangent direction of the rotation direction of the working chamber located at the position of the guide part, the first direction and the second direction are at an angle B, and the angle B satisfies: 0°≤B≤180°, the working area is provided with a first side and a second side that are relatively arranged, along the second direction, the second side is arranged below the first side, and the direction of the second side and the second direction are at an angle C, and the angle C satisfies: 0°≤C≤90°.

9. The deposition device according to claim 8, characterized in that: The angle B satisfies: 60°≤B≤120°; The angle C satisfies: 30°≤C≤60°.

10. The deposition device according to claim 8, characterized in that The angle B satisfies: B=90 degrees, the flow rate of the gas is Va, the linear velocity of the working chamber is Vb, and the angle C satisfies: tanC=Vb / Va.

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