Chip production control method and system based on quick response decision-making

Abstract

The present invention relates to the technical field of semiconductor chip production, and provides a chip production control method and system based on quick response decision-making. The method comprises: an interactive user terminal receiving dielectric layer deposition demand information; calibrating a reactant type list; on the basis of a required dielectric layer thickness and a deposition wafer area, calibrating and generating a reactant consumption list; calculating a reaction constraint rate, and setting a cavity reaction condition and a reactant concentration; obtaining heating point locations of a reaction cavity, carrying out temperature distribution simulation to generate a temperature simulation zoning result, carrying out position optimization to generate a recommended substrate position, and carrying out dielectric layer deposition control. The technical problem that the production quality of chips cannot be ensured due to non-uniform temperature distribution and difficulty in real-time control of the reaction cavity is solved, achieving precise control of reaction conditions and reactant concentrations. By means of temperature distribution simulation, the temperature control precision is improved, the reaction stability is improved, and changes in the chip production process can be quickly responded to, achieving the technical effects of improving the efficiency and quality of chip production.

Description

Chip production control method and system based on rapid response decision-making Technical Field

[0001] The present invention relates to the technical field related to semiconductor chip production, and in particular to a chip production control method and system based on rapid response decision-making. Background Art

[0002] The deposition of dielectric layers is a crucial step in the chip manufacturing process. Mainstream deposition methods include chemical vapor deposition (CVD), atomic layer deposition (ALD), and physical vapor deposition (PVD). Chemical vapor deposition (CVD) is the most widely used method because it is best suited for mass production. The advantage of CVD is that it allows for mass deposition of dielectric layers. However, its disadvantage is that the temperature distribution in the reaction chamber is uneven, making it difficult to control in real time, resulting in uncertain dielectric layer quality.

[0003] In summary, the prior art has the technical problem that the temperature distribution of the reaction chamber is uneven, which is difficult to control in real time and leads to the inability to ensure the quality of chip production.

[0004] Summary of the Invention

[0005] This application provides a chip production control method and system based on rapid response decision-making, aiming to solve the technical problems in the prior art of uneven temperature distribution in the reaction chamber, which is difficult to control in real time and leads to the inability to guarantee chip production quality.

[0006] In view of the above problems, the present application provides a chip production control method and system based on rapid response decision-making.

[0007] The first aspect disclosed in the present application provides a chip production control method based on rapid response decision-making, wherein the method includes: an interactive user terminal, receiving dielectric layer deposition requirement information, wherein the dielectric layer deposition requirement information includes a dielectric layer target substance, a dielectric layer required thickness, and a deposition wafer area; calibrating a reactant type list based on a chemical reaction table according to the dielectric layer target substance; calibrating reactant dosage based on the reactant type list according to the dielectric layer required thickness and the deposition wafer area, and generating a reactant loss list; calculating a reaction constraint rate based on a reaction constraint duration and in combination with the reactant loss list; setting a cavity reaction condition and a reactant concentration based on the reaction constraint rate, wherein the cavity reaction condition includes expected temperature information; obtaining a reaction cavity heating point, performing a temperature distribution simulation based on the expected temperature information, and generating a temperature simulation partitioning result; optimizing the position of a substrate fixing platform based on the temperature simulation partitioning result to generate a recommended substrate position; and controlling the dielectric layer deposition according to the cavity reaction condition, the reactant concentration, and the recommended substrate position.

[0008] Another aspect disclosed in the present application provides a chip production control system based on rapid response decision-making, wherein the system includes: an information receiving module for interactively receiving dielectric layer deposition requirement information from a user terminal, wherein the dielectric layer deposition requirement information includes a dielectric layer target substance, a dielectric layer required thickness, and a deposition wafer area; a type list calibration module for calibrating a reactant type list based on a chemical reaction table according to the dielectric layer target substance; a dosage calibration module for calibrating a reactant dosage based on the reactant type list according to the dielectric layer required thickness and the deposition wafer area, and generating a reactant loss amount list; a constraint rate calculation module for calibrating a reactant dosage based on the reactant type list according to the dielectric layer required thickness and the deposition wafer area, and generating a reactant loss amount list; and a constraint rate calculation module for calibrating a reactant dosage based on the reaction required thickness and the deposition wafer area. The module comprises a reaction condition setting module, which is used to set the reaction conditions and reactant concentration according to the reaction constraint rate, wherein the reaction conditions include the expected temperature information; a temperature distribution simulation module, which is used to obtain the heating points of the reaction chamber, perform temperature distribution simulation based on the expected temperature information, and generate temperature simulation partitioning results; a position optimization module, which is used to optimize the position of the substrate fixing platform based on the temperature simulation partitioning results, and generate a recommended substrate position; and a dielectric layer deposition control module, which is used to control the dielectric layer deposition according to the chamber reaction conditions, the reactant concentration and the recommended substrate position.

[0009] One or more technical solutions provided in this application have at least the following technical effects or advantages:

[0010] Due to the use of an interactive user terminal, dielectric layer deposition requirement information is received; according to the target substance of the dielectric layer and based on the chemical reaction table, the reactant type list is calibrated; according to the required dielectric layer thickness and the deposition wafer area, the reactant dosage is calibrated based on the reactant type list, and a reactant loss list is generated; based on the reaction constraint time and combined with the reactant loss list, the reaction constraint rate is calculated, and the cavity reaction conditions and reactant concentration are set; the heating point of the reaction cavity is obtained, and the temperature distribution simulation is performed based on the expected temperature information to generate the temperature simulation partition result, the position of the substrate fixing platform is optimized, and the recommended substrate position is generated; the dielectric layer deposition is controlled according to the cavity reaction conditions, reactant concentration and recommended substrate position to achieve precise control of the reaction conditions and reactant concentration. Through temperature distribution simulation, the temperature control accuracy is improved, the position of the substrate fixing platform in the chip production process is optimized, the reaction stability is improved, and the change of the chip production process is quickly responded to, thereby improving the efficiency and quality technical effect of chip production.

[0011] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] FIG1 is a schematic diagram of a possible flow chart of a chip production control method based on rapid response decision-making according to an embodiment of the present application;

[0013] FIG2 is a schematic diagram of a possible process for generating temperature simulation partition results in a chip production control method based on rapid response decision-making according to an embodiment of the present application;

[0014] FIG3 is a schematic diagram of a possible structure of a chip production control system based on rapid response decision-making, which is provided in an embodiment of the present application.

[0015] Explanation of the accompanying drawings: information receiving module 100, type list calibration module 200, dosage calibration module 300, constraint rate calculation module 400, reaction condition setting module 500, temperature distribution simulation module 600, position optimization module 700, dielectric layer deposition control module 800. DETAILED DESCRIPTION

[0016] The following description of exemplary embodiments of the present invention is provided in conjunction with the accompanying drawings, in which various details of the embodiments of the present invention are included to facilitate understanding. These details should be considered as merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present invention. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.

[0017] Example 1

[0018] As shown in FIG1 , an embodiment of the present application provides a chip production control method based on rapid response decision-making, wherein the method includes:

[0019] Step-1: The interactive user terminal receives dielectric layer deposition requirement information, wherein the dielectric layer deposition requirement information includes the dielectric layer target material, the required dielectric layer thickness, and the deposition wafer area;

[0020] Step-2: According to the dielectric layer target substance, based on the chemical reaction table, calibrate the reactant type list;

[0021] Step-3: Calibrate the amount of reactants based on the reactant type list according to the required thickness of the dielectric layer and the area of ​​the deposited wafer, and generate a reactant loss list;

[0022] Step-4: Calculate the reaction constraint rate based on the reaction constraint duration and the reactant loss list;

[0023] Step-5: Setting the chamber reaction conditions and reactant concentrations according to the reaction constraint rate, wherein the chamber reaction conditions include the desired temperature information;

[0024] The dielectric layer deposition requirement information includes a target dielectric layer material, a required dielectric layer thickness, and a deposition wafer area, wherein the target dielectric layer material may be aluminum oxide, silicon oxide, hafnium nitride, etc., the required dielectric layer thickness is generally a few nanometers, and the deposition wafer area refers to the surface area of ​​the semiconductor wafer, which can be input by an operator or obtained through automatic detection equipment. The chip production control system is interactively connected with the user end, and interactive connection refers to interaction through signal transmission. A communication network is formed between the chip production control system and the user end, and the dielectric layer deposition requirement information is transmitted to the chip production control system via the communication network;

[0025] The chemical reaction table refers to a list of reactant types required during the reaction process, including chemical reaction formulas. The reactant list can be directly matched based on the target substance. By querying the chemical reaction table, the amount of substances is calculated. According to the required thickness of the dielectric layer and the deposition wafer area, the amount of reactants is calibrated based on the reactant type list. The calculated amount of substances is converted into g (grams) to obtain a reactant loss list.

[0026] The reaction constraint duration refers to the reaction time set during the reaction process; correspondingly, the reaction constraint rate refers to the reaction rate set during the reaction process. The reaction constraint rate is calculated by comparing the reactant loss list with the reaction constraint duration as the denominator and the data in the reactant loss list as the numerator; the cavity reaction conditions refer to the reaction environment conditions set during the reaction process, including temperature, pressure, etc., and the expected temperature information refers to the expected temperature information during the reaction process; by receiving the dielectric layer deposition requirement information input by the user, the parameters such as the reactant type, dosage, reaction rate and cavity reaction conditions required in the dielectric layer deposition process are automatically calculated and set, so as to quickly respond to and meet the dielectric layer deposition requirements in chip production, and realize efficient and accurate chip production.

[0027] Step-6: Obtain the heating points of the reaction chamber, perform temperature distribution simulation based on the expected temperature information, and generate temperature simulation partition results;

[0028] Step-7: Based on the temperature simulation partition results, the position of the substrate fixing platform is optimized to generate a recommended substrate position;

[0029] Step-8: Controlling the deposition of the dielectric layer according to the reaction conditions of the chamber, the concentration of the reactants, and the recommended position of the substrate.

[0030] The heating points of the reaction cavity are evenly distributed in the cavity, the heating points of the reaction cavity are obtained, and the temperature distribution simulation is performed based on the expected temperature information. Specifically, Ansys Twin Builder (a software name that provides the functions of modeling, simulation, and deployment of digital twin models) is used to help the reaction cavity perform temperature distribution simulation. First, Ansys Twin Builder is used to establish a reaction cavity model by comparing the geometric shape, material properties, boundary conditions and other parameters of the reaction cavity; at the same time, the heating point refers to the position with the highest temperature in the reaction cavity, and it is necessary to ensure that the heating points are evenly distributed in the cavity, and the reaction cavity heating points are marked in the reaction cavity model; the expected temperature information is defined, and the expected temperature information refers to the temperature distribution expected to be achieved in the reaction cavity, which needs to be set according to actual needs; factors such as heat conduction, heat convection, and heat radiation in the reaction cavity are simulated, and simulation is performed to generate temperature simulation partition results;

[0031] After the simulation is completed, the interior of the reaction chamber is partitioned, and the position of the substrate fixing platform is optimized to determine the position that meets the chamber reaction conditions and is used as the recommended position of the substrate. Then, during the reaction process, the dielectric layer deposition is controlled according to the chamber reaction conditions, the reactant concentration and the recommended position of the substrate. Simply put, the temperature of the reaction chamber is adjusted according to the reaction conditions and the temperature distribution of the reaction chamber to ensure that the temperature distribution of the reaction chamber is uniform. At the same time, as the dielectric layer deposition continues to accumulate during the reaction process, the position of the substrate fixing platform is adjusted in real time through computer simulation and optimization methods to improve the efficiency and stability of the dielectric layer deposition process, thereby obtaining a better quality dielectric layer. At the same time, the time for experiments and debugging is reduced, production costs are reduced, production efficiency is improved, rapid response is achieved, and the needs of dielectric layer deposition are met.

[0032] According to the reaction constraint rate, the chamber reaction conditions and reactant concentrations are set, wherein the chamber reaction conditions include the desired temperature information. Step-5 includes:

[0033] According to the reactant type list and the reactant loss amount list, backtracking the dielectric layer deposition history data to obtain reactant concentration record data, reaction condition record data and reaction rate record data;

[0034] Set reaction rate deviation threshold;

[0035] Based on a reaction rate deviation threshold, the reaction constraint rate is used as a reference data, and the reaction rate record data is used as a comparison data, and the reactant concentration record data is sorted to generate a first reactant concentration record set;

[0036] Based on a reaction rate deviation threshold, the reaction constraint rate is used as a reference data, and the reaction rate record data is used as a comparison data, the reaction condition record data is sorted to generate a first reaction condition record set;

[0037] performing collinear sorting on the first reactant concentration record set and the first reaction condition record set to generate a second reactant concentration record set and a second reaction condition record set;

[0038] Representative value analysis is performed on the second reactant concentration record set and the second reaction condition record set to generate the reactant concentration and the chamber reaction condition.

[0039] The chamber reaction conditions and reactant concentrations are set based on the reaction constraint rate, including: backtracking the dielectric layer deposition history data based on the reactant type list and the reactant loss list to obtain reactant concentration record data, reaction condition record data, and reaction rate record data. The reaction constraint rate refers to the constraint condition that the reaction rate should meet during the reaction process; setting the reaction rate deviation threshold to determine whether the reaction rate meets the reaction constraint rate;

[0040] Based on the reaction rate deviation threshold, with the reaction constraint rate as the benchmark data and the reaction rate record data as the comparison data, the reactant concentration record data are sorted to generate a first reactant concentration record set, the first reactant concentration record set including multiple groups of reactant concentration record data; based on the reaction rate deviation threshold, with the reaction constraint rate as the benchmark data and the reaction rate record data as the comparison data, the reaction condition record data are sorted to generate a first reaction condition record set, the first reaction condition record set including multiple groups of reaction condition record data;

[0041] The first reactant concentration record set and the first reaction condition record set are collinearly sorted to generate a second reactant concentration record set and a second reaction condition record set: the second reaction condition record set is determined by comparing the first reactant concentration record set; the second reactant concentration record set is determined by comparing the first reaction condition record set, and accordingly, the reaction condition of the first reactant concentration record set during the reaction process is the second reaction condition record set, and the reaction condition of the second reactant concentration record set during the reaction process is the first reaction condition record set; the second reactant concentration record set and the second reaction condition record set are respectively parsed for representative values ​​to generate reactant concentrations and cavity reaction conditions; by setting a reaction rate deviation threshold, the reaction rate can be more accurately controlled; ensuring that the set reactant concentration and cavity reaction conditions are reasonable choices based on historical data and current conditions, so as to better meet the requirements of dielectric layer deposition; at the same time, by setting a reaction rate deviation threshold, possible problems, such as too fast or too slow reaction speed, can be effectively identified and avoided; in general, the stability and efficiency of the production process can be improved.

[0042] Perform representative value analysis on the second reactant concentration record set and the second reaction condition record set to generate the reactant concentration and the chamber reaction condition. Step-5 includes:

[0043] Using the reactant concentration and the reaction condition as positioning coordinates, traverse the second reactant concentration record set and the second reaction condition record set to construct a high-latitude positioning coordinate set;

[0044] Traversing the high-latitude positioning coordinate set to perform pairwise Euclidean distance enumeration analysis to generate multiple positioning Euclidean distances;

[0045] For the first positioning coordinate of the high-latitude positioning coordinate set, select k reference Euclidean distances from the multiple positioning Euclidean distances from near to far, and calculate the reciprocal of the mean of the k reference Euclidean distances, which is set as the first positioning coordinate distribution density;

[0046] Traversing the high-latitude positioning coordinate set, calculating the mean positioning density, and comparing it with the first positioning coordinate distribution density to set the first positioning coordinate anomaly coefficient;

[0047] When the first positioning coordinate anomaly coefficient is greater than or equal to the positioning coordinate anomaly coefficient threshold, the first positioning coordinate is cleaned, the high-latitude positioning coordinate set is traversed, and the cleaned retained coordinate set is obtained for mean analysis to obtain the reactant concentration and the cavity reaction condition.

[0048] The second reactant concentration record set and the second reaction condition record set (which may be temperature, pressure, etc.) are traversed, where each record in the second reactant concentration record set and the second reaction condition record set corresponds to an element in a high-latitude positioning coordinate, and the records are merged to construct a high-latitude positioning coordinate set.

[0049] The high-latitude positioning coordinate set is traversed to perform pairwise Euclidean distance enumeration analysis to generate multiple positioning Euclidean distances. Generally, Euclidean distance is a method of calculating Euclidean distance, which is usually used to calculate the distance between two points in Euclidean space. In the embodiment of the present application, each pair of coordinates in the high-latitude positioning coordinate set is traversed to calculate the pairwise Euclidean distance between the high-latitude positioning coordinate set to generate multiple positioning Euclidean distances.

[0050] For the first positioning coordinate of the high-latitude positioning coordinate set, k reference Euclidean distances are sorted from multiple positioning Euclidean distances from near to far, and the inverse of the mean of the k reference Euclidean distances is counted and set as the first positioning coordinate distribution density. Simply put, first find the k reference points closest to each point in the high-latitude positioning coordinate set (which can be a combination of other reaction conditions and reactant concentrations), then calculate the mean of the Euclidean distances of the k reference points and the origin, and use the inverse of the mean of the Euclidean distances of the k reference points and the origin as the distribution density of the first positioning coordinate.

[0051] Traverse the high-latitude positioning coordinate set, calculate the mean positioning density, compare it with the distribution density of the first positioning coordinate, and set it as the anomaly coefficient of the first positioning coordinate. Simply put, calculate the density mean of all high-latitude positioning coordinates, and then compare this mean with the distribution density of the first positioning coordinate to obtain the anomaly coefficient of the first positioning coordinate.

[0052] If the anomaly coefficient of the first positioning coordinate is greater than or equal to the preset anomaly coefficient threshold, the coordinate corresponding to the anomaly coefficient of the first positioning coordinate is cleaned, and then the mean analysis is performed on the retained coordinate set after cleaning to obtain the optimal reactant concentration and cavity reaction conditions.

[0053] Based on the analysis of representative values ​​of the second reactant concentration record set and the second reaction condition record set, the final reactant concentration and cavity reaction conditions are determined by judging the abnormal coefficient of the positioning coordinates and cleaning the mean analysis of the retained coordinate set, obtaining accurate and stable reactant concentrations and cavity reaction conditions, optimizing the chemical reaction process, and finally obtaining the optimal reactant concentration and reaction conditions by analyzing the reaction products (such as dielectric layer precipitation) under different combinations of reactant concentrations and reaction conditions and cleaning out abnormal coordinates.

[0054] As shown in FIG2 , the heating points of the reaction chamber are obtained, and a temperature distribution simulation is performed based on the expected temperature information to generate a temperature simulation partition result. Step-6 includes:

[0055] Activate the temperature distribution simulation node according to the dielectric layer deposition reactor model and the heating point of the reaction chamber;

[0056] Set the temperature constraint range and heating time constraint range;

[0057] According to the temperature constraint interval and the heating time constraint interval, the preset heating temperature and the preset heating time are adjusted, the temperature distribution is predicted at the temperature distribution simulation node, and the temperature simulation partition result is generated.

[0058] The process of obtaining the heating points of the reaction chamber, simulating the temperature distribution based on the expected temperature information, and generating the temperature simulation partition results includes the following specific steps: using the convolutional neural network model as the model basis; defining the reactor model and heating points; inputting the preset heating temperature and preset heating time into the input channel of the convolutional neural network model, and using the temperature information at different positions as the output data of the model for simulation;

[0059] According to the dielectric layer deposition reactor model and the heating points of the reaction chamber, the temperature distribution simulation node is activated, which involves using specific simulation software or algorithms to start the corresponding temperature distribution simulation process based on information such as the reactor model and heating points; setting the temperature constraint range and heating time constraint range provides restriction conditions for the temperature distribution simulation, such as the maximum and minimum temperatures allowed, and the minimum and maximum values ​​of the heating time.

[0060] According to the temperature constraint interval and the heating time constraint interval, the preset heating temperature and the preset heating time are adjusted. In this process, it is necessary to repeatedly iterate and adjust the preset heating temperature and time to make them meet the set constraints; temperature distribution prediction is performed at the temperature distribution simulation node, which involves the use of finite element analysis, numerical simulation and other tools or methods to predict the temperature distribution based on the preset heating temperature and time, as well as the physical properties of the reactor.

[0061] Generate temperature simulation zoning results. Based on the predicted results, the reaction chamber is divided into different temperature zones, each with similar temperature distribution characteristics, providing basic data for subsequent optimization and analysis. Through simulation technology, the temperature distribution under given heating conditions is predicted, thereby better understanding and controlling the dielectric layer deposition process, optimizing reaction conditions, and improving production efficiency and product quality.

[0062] According to the temperature constraint interval and the heating time constraint interval, the preset heating temperature and the preset heating time are adjusted, temperature distribution prediction is performed at the temperature distribution simulation node, and the temperature simulation partition result is generated. Step-6 also includes:

[0063] Based on the temperature constraint interval and the heating time constraint interval, randomly assigning values ​​to the preset heating temperature and the preset heating time to generate a first heating temperature and a first heating time, and performing temperature distribution prediction at the temperature distribution simulation node to generate a first temperature distribution coordinate;

[0064] Performing neighborhood hierarchical clustering analysis on the first temperature distribution coordinates according to a preset temperature deviation to generate a first temperature simulation partition result;

[0065] Extracting the spatial mean temperature and distribution spatial characteristics of the first temperature partition of the first temperature simulation partition result;

[0066] When the deviation between the spatial mean temperature and the desired temperature information is less than or equal to the preset temperature deviation, and the distribution space characteristic can accommodate the wafer to be deposited, adding the first temperature zone to the ideal temperature zone;

[0067] When the number of ideal temperature zones is greater than or equal to the ideal zone number threshold, setting the first temperature simulation zone result as the temperature simulation zone result;

[0068] Otherwise, the preset heating temperature and the preset heating time are adjusted to perform temperature distribution prediction at the temperature distribution simulation node to generate the temperature simulation partition result.

[0069] Based on the temperature constraint interval and the heating time constraint interval, the preset heating temperature and the preset heating time are randomly assigned to generate the first heating temperature and the first heating time. In order to meet the constraints, it is necessary to try to find the best possible preset heating temperature and time; the temperature distribution is predicted at the temperature distribution simulation node to generate the first temperature distribution coordinates, which involves using a simulation algorithm to predict the temperature distribution based on the preset heating temperature and time obtained in the first step, as well as the physical properties of the reactor.

[0070] According to the preset temperature deviation, a neighborhood hierarchical clustering analysis is performed on the first temperature distribution coordinates to generate the first temperature simulation partition result, with the aim of dividing the temperature distribution into different areas to ensure that the temperature difference is within an acceptable range.

[0071] The spatial mean temperature and distribution space characteristics of the first temperature partition of the first temperature simulation partition result are extracted in order to better understand and analyze the temperature distribution; the deviation between the spatial mean temperature and the expected temperature information is compared. If it is less than or equal to the preset temperature deviation and the distribution space characteristics can accommodate the wafer to be deposited, then the first temperature partition is added to the ideal temperature partition. This is to ensure that the temperature distribution meets the requirements while ensuring that there is enough space for wafer deposition.

[0072] When the ideal number of temperature zones is greater than or equal to the ideal zone threshold, the first temperature simulation zone result is set as the temperature simulation zone result. This ensures sufficient zone information while preventing computational and management inconveniences caused by excessive zones. If the ideal zone threshold is not reached, the preset heating temperature and duration are adjusted, and a new temperature distribution prediction is performed at the temperature distribution simulation node to generate a new temperature simulation zone result. These steps are then repeated until the ideal zone threshold is met. By iteratively adjusting the preset heating temperature and duration, as well as performing temperature distribution prediction and zone analysis, the optimal temperature distribution that meets the constraints and accommodates the wafers to be deposited is found, providing optimization recommendations for the dielectric layer deposition process.

[0073] Based on the temperature simulation partition results, the position of the substrate fixing platform is optimized to generate a recommended substrate position. Step-7 includes:

[0074] Extracting distribution coordinate information of the ideal temperature partitions from the temperature simulation partition results;

[0075] Obtaining the longitudinal motion constraint range and the lateral motion constraint range of the base fixed platform;

[0076] When the distribution coordinate information does not satisfy the longitudinal motion constraint range and / or the lateral motion constraint range, cleaning the ideal temperature partition;

[0077] From the ideal temperature zones whose distribution coordinate information satisfies the longitudinal motion constraint range and the lateral motion constraint range, a zone with the closest distance is selected to set the recommended position of the substrate.

[0078] The distribution coordinates of the ideal temperature zones are extracted from the temperature simulation partition results to obtain the location information of each ideal temperature zone after partitioning. The longitudinal and lateral motion constraint ranges of the substrate fixed platform are obtained to determine the range within which the substrate fixed platform can move, thereby ensuring the feasibility of position optimization.

[0079] Check whether the distribution coordinate information meets the longitudinal and lateral motion constraints. If not, it is because the partition position is too close to or exceeds the movement range of the substrate fixed platform, so this ideal temperature partition needs to be cleared. From the ideal temperature partitions whose distribution coordinate information meets the longitudinal and lateral motion constraints, select the closest distance partition and set the recommended substrate position. The purpose is to find the optimal substrate position, so that the distance from the substrate to the ideal temperature partition is minimized. By considering the motion constraint range of the substrate fixed platform and the position information of the ideal temperature partition, the closest distance is selected and the substrate position is optimized to better meet the requirements of dielectric layer deposition and improve production efficiency.

[0080] Examples of implementation of this application also include:

[0081] When precipitation begins, activating a temperature sensor to collect real-time temperature information of the ideal temperature zone at the recommended position of the substrate;

[0082] When the deviation between the real-time temperature information and the expected temperature information is greater than the preset temperature deviation, the recommended position of the substrate is updated.

[0083] Real-time reaction involves monitoring temperature information in real time and adjusting the substrate's position. This also includes: When precipitation begins, a temperature sensor is activated to collect real-time temperature information for the ideal temperature zone at the substrate's recommended position. A temperature sensor is a sensor or measuring device that is commonly used to monitor the temperature of the ideal temperature zone in real time. The deviation between the real-time temperature information and the desired temperature information is checked. If the deviation is greater than the preset temperature deviation, the current recommended substrate position may not be optimal and needs to be updated.

[0084] During the deposition of the dielectric layer, the temperature information of the ideal temperature partition is monitored in real time and the recommended position of the substrate is adjusted to minimize the deviation between the real-time temperature information and the desired temperature information, thereby improving the temperature control accuracy and optimizing the deposition process of the dielectric layer.

[0085] In summary, the chip production control method and system based on rapid response decision-making provided by the embodiments of the present application have the following technical effects:

[0086] 1. By using a chip production control method with fast response decision-making and optimizing the chip production process, the efficiency and quality of chip production can be improved.

[0087] 2. By using a chip production control method with fast response decision-making, the flexibility of chip production can be improved by quickly responding to changes in the chip production process.

[0088] 3. The temperature distribution simulation node is activated based on the dielectric layer deposition reactor model and the heating points in the reaction chamber. The temperature constraint interval and heating duration constraint interval are set. Based on the temperature constraint interval and heating duration constraint interval, the preset heating temperature and preset heating duration are adjusted. Temperature distribution prediction is performed at the temperature distribution simulation node to generate temperature simulation partitioning results. Based on the predicted results, the reaction chamber is divided into different temperature zones, each with similar temperature distribution characteristics, providing basic data for subsequent optimization and analysis. Through simulation technology, the temperature distribution under given heating conditions is predicted, thereby better understanding and controlling the dielectric layer deposition process, optimizing reaction conditions, and improving production efficiency and product quality.

[0089] Example 2

[0090] Based on the same inventive concept as the chip production control method based on rapid response decision-making in the aforementioned embodiment, as shown in FIG3 , the embodiment of the present application provides a chip production control system based on rapid response decision-making, wherein the system includes:

[0091] The information receiving module 100 is used for interacting with the user end to receive dielectric layer deposition requirement information, wherein the dielectric layer deposition requirement information includes the dielectric layer target material, the dielectric layer required thickness and the deposition wafer area;

[0092] A type list calibration module 200 is configured to calibrate a reactant type list based on a chemical reaction table according to the dielectric layer target substance;

[0093] A dosage calibration module 300 is configured to calibrate the dosage of reactants based on the reactant type list according to the required thickness of the dielectric layer and the area of ​​the deposited wafer, and generate a reactant loss list;

[0094] A constraint rate calculation module 400 is used to calculate the reaction constraint rate based on the reaction constraint duration and the reactant loss list;

[0095] A reaction condition setting module 500 is used to set the chamber reaction conditions and reactant concentrations according to the reaction constraint rate, wherein the chamber reaction conditions include desired temperature information;

[0096] The temperature distribution simulation module 600 is used to obtain the heating points of the reaction chamber, perform temperature distribution simulation based on the expected temperature information, and generate temperature simulation partition results;

[0097] A position optimization module 700 is used to optimize the position of the substrate fixing platform based on the temperature simulation partitioning result and generate a recommended position of the substrate;

[0098] The dielectric layer deposition control module 800 is configured to control the dielectric layer deposition according to the chamber reaction conditions, the reactant concentrations, and the recommended substrate position.

[0099] Furthermore, the reaction condition setting module 500 is used to perform the following steps:

[0100] According to the reactant type list and the reactant loss amount list, backtracking the dielectric layer deposition history data to obtain reactant concentration record data, reaction condition record data and reaction rate record data;

[0101] Set reaction rate deviation threshold;

[0102] Based on a reaction rate deviation threshold, the reaction constraint rate is used as a reference data, and the reaction rate record data is used as a comparison data, and the reactant concentration record data is sorted to generate a first reactant concentration record set;

[0103] Based on a reaction rate deviation threshold, the reaction constraint rate is used as a reference data, and the reaction rate record data is used as a comparison data, the reaction condition record data is sorted to generate a first reaction condition record set;

[0104] performing collinear sorting on the first reactant concentration record set and the first reaction condition record set to generate a second reactant concentration record set and a second reaction condition record set;

[0105] Representative value analysis is performed on the second reactant concentration record set and the second reaction condition record set to generate the reactant concentration and the chamber reaction condition.

[0106] Furthermore, the reaction condition setting module 500 is further configured to perform the following steps:

[0107] Using the reactant concentration and the reaction condition as positioning coordinates, traverse the second reactant concentration record set and the second reaction condition record set to construct a high-latitude positioning coordinate set;

[0108] Traversing the high-latitude positioning coordinate set to perform pairwise Euclidean distance enumeration analysis to generate multiple positioning Euclidean distances;

[0109] For the first positioning coordinate of the high-latitude positioning coordinate set, select k reference Euclidean distances from the multiple positioning Euclidean distances from near to far, and calculate the reciprocal of the mean of the k reference Euclidean distances, which is set as the first positioning coordinate distribution density;

[0110] Traversing the high-latitude positioning coordinate set, calculating the mean positioning density, and comparing it with the first positioning coordinate distribution density to set the first positioning coordinate anomaly coefficient;

[0111] When the first positioning coordinate anomaly coefficient is greater than or equal to the positioning coordinate anomaly coefficient threshold, the first positioning coordinate is cleaned, the high-latitude positioning coordinate set is traversed, and the cleaned retained coordinate set is obtained for mean analysis to obtain the reactant concentration and the cavity reaction condition.

[0112] Furthermore, the temperature distribution simulation module 600 is configured to perform the following steps:

[0113] Activate the temperature distribution simulation node according to the dielectric layer deposition reactor model and the heating point of the reaction chamber;

[0114] Set the temperature constraint range and heating time constraint range;

[0115] According to the temperature constraint interval and the heating time constraint interval, the preset heating temperature and the preset heating time are adjusted, the temperature distribution is predicted at the temperature distribution simulation node, and the temperature simulation partition result is generated.

[0116] Furthermore, the temperature distribution simulation module 600 is further configured to perform the following steps:

[0117] Based on the temperature constraint interval and the heating time constraint interval, randomly assigning values ​​to the preset heating temperature and the preset heating time to generate a first heating temperature and a first heating time, and performing temperature distribution prediction at the temperature distribution simulation node to generate a first temperature distribution coordinate;

[0118] Performing neighborhood hierarchical clustering analysis on the first temperature distribution coordinates according to a preset temperature deviation to generate a first temperature simulation partition result;

[0119] Extracting the spatial mean temperature and distribution spatial characteristics of the first temperature partition of the first temperature simulation partition result;

[0120] When the deviation between the spatial mean temperature and the desired temperature information is less than or equal to the preset temperature deviation, and the distribution space characteristic can accommodate the wafer to be deposited, adding the first temperature zone to the ideal temperature zone;

[0121] When the number of ideal temperature zones is greater than or equal to the ideal zone number threshold, setting the first temperature simulation zone result as the temperature simulation zone result;

[0122] Otherwise, the preset heating temperature and the preset heating time are adjusted to perform temperature distribution prediction at the temperature distribution simulation node to generate the temperature simulation partition result.

[0123] Furthermore, the location optimization module 700 is configured to perform the following steps:

[0124] Extracting distribution coordinate information of the ideal temperature partitions from the temperature simulation partition results;

[0125] Obtaining the longitudinal motion constraint range and the lateral motion constraint range of the base fixed platform;

[0126] When the distribution coordinate information does not satisfy the longitudinal motion constraint range and / or the lateral motion constraint range, cleaning the ideal temperature partition;

[0127] From the ideal temperature zones whose distribution coordinate information satisfies the longitudinal motion constraint range and the lateral motion constraint range, a zone with the closest distance is selected to set the recommended position of the substrate.

[0128] Furthermore, the location optimization module 700 is further configured to perform the following steps:

[0129] When precipitation begins, activating a temperature sensor to collect real-time temperature information of the ideal temperature zone at the recommended position of the substrate;

[0130] When the deviation between the real-time temperature information and the expected temperature information is greater than the preset temperature deviation, the recommended position of the substrate is updated.

[0131] Any step of the method described above can be stored as a computer instruction or program in an unlimited computer memory, and can be called and recognized by an unlimited computer processor to implement any method in the embodiments of the present application, without any unnecessary restrictions.

[0132] Furthermore, the terms "first" or "second" as described above may not only represent an order relationship but may also represent a specific concept and / or refer to the selection of multiple elements individually or collectively. Obviously, those skilled in the art may make various modifications and variations to this application without departing from the scope of this application. Thus, if such modifications and variations fall within the scope of this application and its equivalents, this application is intended to include such modifications and variations.

Claims

1. A chip production control method based on rapid response decision-making, characterized in that: include: The interactive user terminal receives dielectric layer deposition requirement information, wherein the dielectric layer deposition requirement information includes dielectric layer target material, dielectric layer required thickness and deposition wafer area; According to the dielectric layer target substance, based on the chemical reaction table, calibrate the list of reactant types; According to the required thickness of the dielectric layer and the area of ​​the deposited wafer, the reactant dosage is calibrated based on the reactant type list to generate a reactant loss amount list; Based on the reaction constraint time, combined with the reactant consumption list, the reaction constraint rate is calculated; According to the reaction constraint rate, setting the chamber reaction conditions and reactant concentrations, wherein the chamber reaction conditions include expected temperature information; Acquire the heating points of the reaction chamber, perform temperature distribution simulation based on the expected temperature information, and generate temperature simulation partition results; Based on the temperature simulation partitioning result, the position of the substrate fixing platform is optimized to generate a recommended position of the substrate; The dielectric layer deposition is controlled according to the chamber reaction conditions, the reactant concentration and the recommended position of the substrate.

2. The method according to claim 1, characterized in that According to the reaction constraint rate, the chamber reaction conditions and reactant concentrations are set, wherein the chamber reaction conditions include expected temperature information, including: According to the reactant type list and the reactant loss amount list, backtracking the dielectric layer deposition history data, obtaining reactant concentration record data, reaction condition record data and reaction rate record data; Set the reaction rate deviation threshold; Based on the reaction rate deviation threshold, the reaction constraint rate is used as the reference data, and the reaction rate record data is used as the comparison data, the reactant concentration record data is sorted to generate a first reactant concentration record set; Based on the reaction rate deviation threshold, the reaction constraint rate is used as the reference data, and the reaction rate record data is used as the comparison data, the reaction condition record data is sorted to generate a first reaction condition record set; Performing collinear sorting on the first reactant concentration record set and the first reaction condition record set to generate a second reactant concentration record set and a second reaction condition record set; The second reactant concentration record set and the second reaction condition record set are respectively parsed for representative values ​​to generate the reactant concentration and the chamber reaction condition.

3. The method according to claim 2, characterized in that Respectively performing representative value analysis on the second reactant concentration record set and the second reaction condition record set to generate the reactant concentration and the chamber reaction condition, including: Taking the reactant concentration and the reaction condition as the positioning coordinates, traverse the second reactant concentration record set and the second reaction condition record set to construct a high-latitude positioning coordinate set; Traversing the high-latitude positioning coordinate set to perform pairwise Euclidean distance enumeration analysis to generate multiple positioning Euclidean distances; For the first positioning coordinate of the high-latitude positioning coordinate set, select k reference Euclidean distances from the multiple positioning Euclidean distances from near to far, and count the reciprocal of the mean of the k reference Euclidean distances, which is set as the first positioning coordinate distribution density; Traverse the high-latitude positioning coordinate set, calculate the mean positioning density, and compare it with the first positioning coordinate The distribution density ratio is calculated and set as the anomaly coefficient of the first positioning coordinate; When the first positioning coordinate anomaly coefficient is greater than or equal to the positioning coordinate anomaly coefficient threshold, the first positioning coordinate is cleaned, the high-latitude positioning coordinate set is traversed, the cleaned retained coordinate set is obtained for mean analysis, and the reactant concentration and the cavity reaction condition are obtained.

4. The method according to claim 1, characterized in that Acquire the heating points of the reaction chamber, perform temperature distribution simulation based on the expected temperature information, and generate temperature simulation partition results, including: Activate the temperature distribution simulation node according to the model of the dielectric layer deposition reactor and the heating point of the reaction chamber; Set the temperature constraint range and heating time constraint range; According to the temperature constraint interval and the heating time constraint interval, the preset heating temperature and the preset heating time are adjusted, the temperature distribution prediction is performed at the temperature distribution simulation node, and the temperature simulation partition result is generated.

5. The method according to claim 4, characterized in that According to the temperature constraint interval and the heating time constraint interval, adjusting the preset heating temperature and the preset heating time, performing temperature distribution prediction at the temperature distribution simulation node, and generating the temperature simulation partition result, including: Based on the temperature constraint interval and the heating time constraint interval, randomly assigning values ​​to the preset heating temperature and the preset heating time to generate a first heating temperature and a first heating time, performing temperature distribution prediction at the temperature distribution simulation node to generate a first temperature distribution coordinate; According to the preset temperature deviation, performing neighborhood hierarchical clustering analysis on the first temperature distribution coordinates to generate a first temperature simulation partition result; Extracting the spatial mean temperature and distribution spatial characteristics of the first temperature partition of the first temperature simulation partition result; When the deviation between the spatial mean temperature and the expected temperature information is less than or equal to the preset temperature deviation, and the distribution space characteristic can accommodate the wafer to be deposited, adding the first temperature partition into the ideal temperature partition; When the number of ideal temperature zones is greater than or equal to the threshold number of ideal zones, setting the first temperature simulation zone result as the temperature simulation zone result; Otherwise, the preset heating temperature and the preset heating time are adjusted to perform temperature distribution prediction at the temperature distribution simulation node to generate the temperature simulation partition result.

6. The method according to claim 5, characterized in that Based on the temperature simulation partition results, the position of the substrate fixing platform is optimized to generate a recommended position of the substrate, including: Extracting distribution coordinate information of the ideal temperature partition from the temperature simulation partition result; Obtaining the longitudinal motion constraint range and the lateral motion constraint range of the base fixed platform; When the distribution coordinate information does not satisfy the longitudinal motion constraint range and / or the lateral motion constraint range, cleaning the ideal temperature partition; From the ideal temperature partitions whose distribution coordinate information satisfies the longitudinal motion constraint range and the lateral motion constraint range, the closest distance partition is selected to set the recommended position of the substrate.

7. The method according to claim 6, characterized in that Also includes: When precipitation begins, activating a temperature sensor to collect real-time temperature information of the ideal temperature zone at the recommended position of the substrate; When the deviation between the real-time temperature information and the expected temperature information is greater than the preset temperature deviation, the recommended position of the substrate is updated.

8. A chip production control system based on rapid response decision-making, characterized in that: A chip production control method based on rapid response decision-making for implementing any one of claims 1 to 7, comprising: An information receiving module, used for interacting with a user terminal, to receive dielectric layer deposition requirement information, wherein the dielectric layer deposition requirement information includes a dielectric layer target material, a dielectric layer required thickness, and a deposition wafer area; A type list calibration module, used for calibrating a reactant type list according to the dielectric layer target substance and based on a chemical reaction table; A dosage calibration module is used to calibrate the dosage of reactants based on the reactant type list according to the required thickness of the dielectric layer and the area of ​​the deposited wafer, and generate a reactant loss list; A constraint rate calculation module, used to calculate the reaction constraint rate based on the reaction constraint duration and the reactant loss list; A reaction condition setting module, used to set the chamber reaction conditions and reactant concentrations according to the reaction constraint rate, wherein the chamber reaction conditions include expected temperature information; A temperature distribution simulation module is used to obtain the heating points of the reaction chamber, perform temperature distribution simulation based on the expected temperature information, and generate temperature simulation partition results; A position optimization module, used for optimizing the position of the substrate fixing platform based on the temperature simulation partition result, and generating a recommended position of the substrate; The dielectric layer deposition control module is used to control the dielectric layer deposition according to the chamber reaction conditions, the reactant concentration and the recommended position of the substrate.

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