Detection device

Abstract

This detection device includes: a substrate having a plurality of segment regions; a plurality of photodiodes provided on the substrate, a lower electrode, an active layer, and an upper electrode being laminated in this order in each of the photodiodes; and a plurality of sealing films covering the photodiodes. Each of the segment regions has at least one photodiode and one sealing film. In each of the segment regions, one sealing film covers a side wall of the active layer.

Description

Detection device

[0001] The present invention relates to a detection device.

[0002] An optical sensor capable of detecting fingerprint patterns and vein patterns is known (see, for example, Patent Document 1). Such an optical sensor includes a plurality of organic photodiodes (OPDs) that use an organic semiconductor material as an active layer. The photodiodes are stacked, for example, in the following order: a lower electrode, an electron transport layer, an active layer, a hole transport layer, and an upper electrode.

[0003] Special Publication No. 2002-502120

[0004] A detection device having an OPD is provided with a sealing film that covers the OPD. However, if a pinhole or the like is formed in the sealing film, moisture may enter the detection region where the OPD is provided from outside the detection device. The detection sensitivity of the active layer of the OPD may decrease due to moisture intrusion.

[0005] An object of the present invention is to provide a detection device capable of suppressing a decrease in the detection sensitivity of a photodiode.

[0006] A detection device according to one aspect of the present disclosure includes a substrate having a plurality of divided regions, a plurality of photodiodes provided on the substrate, each of which is stacked in the order of a lower electrode, an active layer, and an upper electrode, and a plurality of sealing films covering the plurality of photodiodes, each of which has at least one of the photodiodes and one of the sealing films, and in each of the plurality of divided regions, one of the sealing films covers a sidewall of the active layer.

[0007] FIG. 1 is a plan view schematically showing a detection device according to a first embodiment. FIG. 2 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. FIG. 3 is a circuit diagram showing the detection device according to the first embodiment. FIG. 4 is a plan view schematically showing a plurality of photodiodes and a plurality of sealing films. FIG. 5 is a cross-sectional view taken along line VV' in FIG. 4. FIG. 6 is a cross-sectional view taken along line VI-VI' in FIG. 4. FIG. 7 is a plan view schematically showing a detection device according to a second embodiment. FIG. 8 is a cross-sectional view taken along line XIII-XIII' in FIG. 7. FIG. 9 is a cross-sectional view taken along line IX-IX' in FIG. 7.

[0008] Modes (embodiments) for carrying out the present disclosure will be described in detail with reference to the drawings. The present disclosure is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially identical. Furthermore, the components described below can be combined as appropriate. Note that the disclosure is merely an example, and any appropriate modifications that a person skilled in the art can easily conceive while maintaining the gist of the present disclosure are naturally included within the scope of the present disclosure. Furthermore, for clarity of explanation, the drawings may schematically depict the width, thickness, shape, etc. of each part compared to the actual embodiment. However, these are merely examples and are not intended to limit the interpretation of the present disclosure. Furthermore, in this disclosure and each figure, elements similar to those described above with reference to the previous figures may be designated by the same reference numerals, and detailed descriptions may be omitted as appropriate.

[0009] In the present disclosure, when expressing an aspect of placing another structure on top of a certain structure, the term "on top" is used, unless otherwise specified, to include both a case in which another structure is placed directly on top of a certain structure so as to be in contact with the certain structure, and a case in which another structure is placed above a certain structure via yet another structure.

[0010] First Embodiment Fig. 1 is a plan view schematically showing a detection device according to a first embodiment. As shown in Fig. 1, the detection device 1 has a substrate 21, a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, and light sources 53 and 54. The first light source substrate 51 is provided with a plurality of light sources 53. The second light source substrate 52 is provided with a plurality of light sources 54.

[0011] A control board 121 is electrically connected to the substrate 21 via a wiring board 71. The wiring board 71 is, for example, a flexible printed circuit board or a rigid board. The wiring board 71 is provided with a detection circuit 48. The control board 121 is provided with a control circuit 122 and a power supply circuit 123. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. The control circuit 122 also supplies control signals to the light sources 53 and 54 to control the lighting or non-lighting of the light sources 53 and 54. The power supply circuit 123 supplies voltage signals, such as a sensor power supply signal VDDSNS (see FIG. 3), to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16. Furthermore, the power supply circuit 123 supplies a power supply voltage to the light sources 53 and 54 .

[0012] The substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is an area where multiple photodiodes PD (see FIG. 4) of the sensor unit 10 are provided. The peripheral area GA is an area between the periphery of the detection area AA and the outer edge of the substrate 21, where multiple photodiodes PD are not provided.

[0013] The gate line driving circuit 15 and the signal line selection circuit 16 are provided in the peripheral area GA. Specifically, the gate line driving circuit 15 is provided in a region of the peripheral area GA extending along the second direction Dy. The signal line selection circuit 16 is provided in a region of the peripheral area GA extending along the first direction Dx, and is provided between the sensor unit 10 and the detection circuit 48.

[0014] In the following description, the first direction Dx is a direction in a plane parallel to the substrate 21. The second direction Dy is a direction in a plane parallel to the substrate 21, and is a direction perpendicular to the first direction Dx. The second direction Dy may intersect the first direction Dx without being perpendicular to it. The third direction Dz is a direction perpendicular to the first direction Dx and the second direction Dy, and is the normal direction to the main surface of the substrate 21. Furthermore, "planar view" refers to the positional relationship when viewed from a direction perpendicular to the substrate 21.

[0015] The plurality of light sources 53 are provided on the first light source substrate 51 and arranged along the second direction Dy. The plurality of light sources 54 are provided on the second light source substrate 52 and arranged along the second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 via terminal portions 124 and 125 provided on the control board 121, respectively.

[0016] For example, inorganic light emitting diodes (LEDs) or organic light emitting diodes (OLEDs) are used as the light sources 53 and 54. The light sources 53 and 54 emit light of different wavelengths.

[0017] The first light emitted from the light source 53 is mainly reflected by the surface of the object to be detected, such as a finger, and enters the sensor unit 10. As a result, the sensor unit 10 can detect a fingerprint by detecting the shape of the projections and recesses on the surface of the finger or the like. The second light emitted from the light source 54 is mainly reflected by the inside of the finger or the like or passes through the finger or the like and enters the sensor unit 10. As a result, the sensor unit 10 can detect information about the living body inside the finger or the like. The information about the living body includes, for example, the pulse wave, pulse rate, and blood vessel image of the finger or palm. In other words, the detection device 1 may be configured as a fingerprint detection device that detects fingerprints, or a vein detection device that detects blood vessel patterns such as veins.

[0018] The arrangement of the light sources 53, 54 shown in FIG. 1 is merely an example and can be changed as appropriate. The detection device 1 is provided with multiple types of light sources 53, 54 as light sources. However, this is not limited to this, and the light source may be of one type. For example, multiple light sources 53 and multiple light sources 54 may be arranged on the first light source substrate 51 and the second light source substrate 52, respectively. Furthermore, the number of light source substrates on which the light sources 53 and the light sources 54 are arranged may be one or three or more. Alternatively, it is sufficient that at least one or more light sources are arranged.

[0019] 2 is a block diagram showing an example of the configuration of the detection device according to the first embodiment. As shown in FIG. 2, the detection device 1 further includes a detection control circuit 11 and a detection unit 40. Some or all of the functions of the detection control circuit 11 are included in a control circuit 122. In addition, some or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 122.

[0020] The sensor unit 10 has a plurality of photodiodes PD. The photodiodes PD of the sensor unit 10 output electrical signals corresponding to the incident light as detection signals Vdet to the signal line selection circuit 16. The sensor unit 10 also performs detection in accordance with a gate drive signal VGL supplied from the gate line drive circuit 15.

[0021] The detection control circuit 11 is a circuit that supplies control signals to the gate line drive circuit 15, the signal line selection circuit 16, and the detection unit 40, respectively, and controls their operations. The detection control circuit 11 supplies various control signals, such as a start signal STV and a clock signal CK, to the gate line drive circuit 15. The detection control circuit 11 also supplies various control signals, such as a selection signal ASW, to the signal line selection circuit 16. The detection control circuit 11 also supplies various control signals to the light sources 53 and 54, and controls the lighting and non-lighting of each.

[0022] The gate line driving circuit 15 is a circuit that drives a plurality of gate lines GL (see FIG. 3) based on various control signals. The gate line driving circuit 15 sequentially or simultaneously selects the plurality of gate lines GL and supplies a gate driving signal VGL to the selected gate lines GL. In this way, the gate line driving circuit 15 selects a plurality of photodiodes PD connected to the gate lines GL.

[0023] The signal line selection circuit 16 is a switch circuit that sequentially or simultaneously selects a plurality of signal lines SL (see FIG. 3 ). The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 connects the selected signal line SL to the detection circuit 48 based on a selection signal ASW supplied from the detection control circuit 11. As a result, the signal line selection circuit 16 outputs a detection signal Vdet of the photodiode PD to the detection unit 40.

[0024] The detection unit 40 includes a detection circuit 48, a signal processing circuit 44, a coordinate extraction circuit 45, a memory circuit 46, and a detection timing control circuit 47. The detection timing control circuit 47 controls the detection circuit 48, the signal processing circuit 44, and the coordinate extraction circuit 45 based on a control signal supplied from the detection control circuit 11 so that they operate in synchronization with each other.

[0025] The detection circuit 48 is, for example, an analog front end (AFE) circuit. The detection circuit 48 is a signal processing circuit that has at least the functions of a detection signal amplifier circuit 42 and an A / D conversion circuit 43. The detection signal amplifier circuit 42 amplifies the detection signal Vdet. The A / D conversion circuit 43 converts the analog signal output from the detection signal amplifier circuit 42 into a digital signal.

[0026] The signal processing circuit 44 is a logic circuit that detects a predetermined physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When a finger touches or approaches the detection surface, the signal processing circuit 44 can detect unevenness on the surface of the finger or palm based on the signal from the detection circuit 48. The signal processing circuit 44 can also detect information about the living body based on the signal from the detection circuit 48. The information about the living body includes, for example, an image of the blood vessels of the finger or palm, a pulse wave, a pulse rate, and a blood oxygen concentration.

[0027] The memory circuit 46 temporarily stores the signals calculated by the signal processing circuit 44. The memory circuit 46 may be, for example, a RAM (Random Access Memory), a register circuit, or the like.

[0028] The coordinate extraction circuit 45 is a logic circuit that calculates the detected coordinates of the unevenness of the surface of a finger or the like when the signal processing circuit 44 detects contact or proximity of a finger. The coordinate extraction circuit 45 is also a logic circuit that calculates the detected coordinates of the blood vessels of the finger or palm. The coordinate extraction circuit 45 combines the detection signals Vdet output from each photodiode PD of the sensor unit 10 to generate two-dimensional information indicating the shape of the unevenness of the surface of the finger or the like and two-dimensional information indicating the shape of the blood vessels of the finger or palm. The coordinate extraction circuit 45 may output the detection signal Vdet as the sensor output voltage Vo without calculating the detection coordinates.

[0029] 3 is a circuit diagram showing the detection device according to the first embodiment. The circuit configuration of a detection circuit 48 is also shown in FIG. 3. As shown in FIG. 3, a sensor pixel PX includes a photodiode PD, a capacitance element Ca, and a drive transistor Tr. The capacitance element Ca is a capacitance (sensor capacitance) formed in the photodiode PD, and is equivalently connected in parallel with the photodiode PD.

[0030] 3 shows two gate lines GL(m) and GL(m+1) arranged in the second direction Dy among the multiple gate lines GL. Also, two signal lines SL(n) and SL(n+1) arranged in the first direction Dx among the multiple signal lines SL. A sensor pixel PX is an area surrounded by the gate line GL and the signal line SL.

[0031] The drive transistors Tr are provided corresponding to the respective photodiodes PD. The drive transistors Tr are configured by thin film transistors, and in this example, are configured by n-channel MOS (Metal Oxide Semiconductor) type TFTs (Thin Film Transistors).

[0032] Each of the gate lines GL is connected to the gates of a plurality of drive transistors Tr arranged in a first direction Dx. Each of the signal lines SL is connected to one of the source and drain of a plurality of drive transistors Tr arranged in a second direction Dy. The other of the source and drain of each of the drive transistors Tr is connected to the anode of the photodiode PD and the capacitance element Ca.

[0033] A sensor power signal VDDSNS is supplied to the cathode of the photodiode PD from the power supply circuit 123 (see FIG. 1) via a power supply wiring 22. Note that, although FIG. 3 shows the power supply wiring 22 extending in the first direction Dx and connected to the multiple photodiodes PD, this is not limiting. The power supply wiring 22 may be provided, for example, in the peripheral area GA and extending along each side of the substrate 21 so as to surround the multiple photodiodes PD. Furthermore, a sensor reference voltage COM, which serves as the initial potential of the signal line SL and the capacitance element Ca, is supplied to the signal line SL and the capacitance element Ca from the power supply circuit 123 via a reset transistor TrR.

[0034] When light is irradiated onto the sensor pixel PX during the exposure period, a current corresponding to the amount of light flows through the photodiode PD, causing charge to accumulate in the capacitance element Ca. When the drive transistor Tr is turned on during the readout period, a current corresponding to the charge accumulated in the capacitance element Ca flows through the signal line SL. The signal line SL is connected to the detection circuit 48 via the output transistor TrS of the signal line selection circuit 16. This allows the detection device 1 to detect a signal corresponding to the amount of light irradiated onto the photodiode PD for each sensor pixel PX.

[0035] During the readout period, the switch SSW of the detection circuit 48 is turned on and connected to the signal line SL. The detection signal amplifier circuit 42 of the detection circuit 48 converts the current or charge supplied from the signal line SL into a voltage corresponding to the current or charge. A reference potential (Vref) having a fixed potential is input to the non-inverting input terminal (+) of the detection signal amplifier circuit 42, and the signal line SL is connected to the inverting input terminal (-). In this embodiment, a signal equal to the sensor reference voltage COM is input as the reference potential (Vref) voltage. The control circuit 122 (see FIG. 1) calculates the difference between the detection signal Vdet when light is irradiated and the detection signal Vdet when light is not irradiated as the sensor output voltage Vo. The detection signal amplifier circuit 42 also includes a capacitance element Cb and a reset switch RSW. During the reset period, the reset switch RSW is turned on, resetting the charge in the capacitance element Cb.

[0036] The driving transistor Tr is not limited to an n-type TFT, but may be a p-type TFT. The pixel circuit of the sensor pixel PX shown in Fig. 3 is merely an example, and the sensor pixel PX may be provided with multiple transistors corresponding to one photodiode PD.

[0037] FIG. 4 is a plan view schematically showing a plurality of photodiodes and a plurality of sealing films. FIG. 5 is a cross-sectional view taken along the line V-V' in FIG. 4. FIG. 6 is a cross-sectional view taken along the line VI-VI' in FIG. 4. As shown in FIG. 4, the detection area AA of the substrate 21 includes a plurality of divided areas DA. In FIG. 4, boundaries DAa and DAb of the divided areas DA are schematically indicated by dashed dotted lines. The divided areas DA are areas in which a plurality of photodiodes PD are separately provided. The lower electrode 31, active layer 33, and upper electrode 32 (see FIGS. 5 and 6) that constitute the photodiode PD are not provided in areas that overlap with the boundaries DAa and DAb of the divided areas DA.

[0038] The multiple divided regions DA include four divided regions DA1, DA2, DA3, and DA4. The divided regions DA1, DA2, DA3, and DA4 are arranged in a matrix in the first direction Dx and the second direction Dy. The divided regions DA1 and DA2 are adjacent to each other in the first direction Dx. The divided regions DA3 and DA4 are adjacent to each other in the first direction Dx. The divided regions DA1 and DA3 are adjacent to each other in the second direction Dy. The divided regions DA2 and DA4 are adjacent to each other in the second direction Dy.

[0039] The lengths of the divided areas DA1, DA2, DA3, and DA4 in the first direction Dx are each substantially equal to half the length of the detection area AA in the first direction Dx. The lengths of the divided areas DA1, DA2, DA3, and DA4 in the second direction Dy are each substantially equal to half the length of the detection area AA in the second direction Dy.

[0040] In the following description, when it is not necessary to distinguish between the divided areas DA1, DA2, DA3, and DA4, they will simply be referred to as divided area DA.

[0041] The plurality of photodiodes PD are arranged in a matrix in the detection area AA in the first direction Dx and the second direction Dy. The plurality of photodiodes PD are also arranged in a matrix in each of the plurality of divided areas DA in the first direction Dx and the second direction Dy. For example, the plurality of photodiodes PD are arranged in two rows and four columns in each of the divided areas DA.

[0042] 5 and 6, a circuit formation layer 23 and a photodiode PD are stacked in this order on a substrate 21. The circuit formation layer 23 is provided on the substrate 21, and is a layer on which various transistors such as the drive transistor Tr shown in FIG. 3 and various wirings such as the gate line GL and the signal line SL are formed.

[0043] The photodiode PD is provided on the circuit formation layer 23. Each of the photodiodes PD has a lower electrode 31, an active layer 33, and an upper electrode 32, and the lower electrode 31, the active layer 33, and the upper electrode 32 are stacked in this order on the substrate 21. The photodiode PD of this embodiment is an OPD (organic photodiode) in which an organic semiconductor is used as the active layer 33.

[0044] The lower electrode 31 is an anode electrode of the photodiode PD, and is made of a light-transmitting conductive material such as ITO (Indium Tin Oxide).

[0045] The characteristics (for example, voltage-current characteristics and resistance value) of the active layer 33 change depending on the light irradiated thereto. An organic material is used as the material of the active layer 33. Specifically, the active layer 33 has a bulk heterostructure in which a p-type organic semiconductor and an n-type organic semiconductor, an n-type fullerene derivative (PCBM), are mixed. For example, a low-molecular organic material, C ６０(fullerene), PCBM (phenyl C61-butyric acid methyl ester), CuPc (copper phthalocyanine), F16CuPc (fluorinated copper phthalocyanine), rubrene (5,6,11,12-tetraphenyltetracene), PDI (perylene derivative), etc. can be used.

[0046] The active layer 33 can be formed by a vapor deposition (dry process) using these low molecular weight organic materials. In this case, the active layer 33 is formed by, for example, CuPc and F １６ CuPc laminated film or rubrene and C ６０ The active layer 33 may be a laminated film of the above-mentioned low molecular weight organic material and high molecular weight organic material. The active layer 33 may also be formed by a coating process (wet process). In this case, the active layer 33 is made of a material that combines the above-mentioned low molecular weight organic material and high molecular weight organic material. Examples of high molecular weight organic materials that can be used include P3HT (poly(3-hexylthiophene)) and F8BT (F8-alt-benzothiadiazole). The active layer 33 may be a film in which P3HT and PCBM are mixed, or a film in which F8BT and PDI are mixed.

[0047] The upper electrode 32 is provided on the active layer 33. The upper electrode 32 is a cathode electrode of the photodiode PD and is made of a light-transmitting conductive material such as ITO or IZO. The upper electrode 32 may be a laminated film made of a plurality of light-transmitting conductive materials.

[0048] The photodiode PD may have a buffer layer (electron transport layer, hole transport layer, etc.) between the lower electrode 31 and the active layer 33 and between the upper electrode 32 and the active layer 33. The buffer layer is provided to make it easier for holes and electrons generated in the active layer 33 to reach the lower electrode 31 or the upper electrode 32.

[0049] 4 to 6 , the plurality of lower electrodes 31 are provided separately for each photodiode PD. The active layer 33 and the upper electrode 32 are provided continuously across the plurality of photodiodes PD (lower electrodes 31). The active layer 33 and the upper electrode 32 cover the lower electrodes 31 of the plurality of photodiodes PD and are provided separately for each division area DA.

[0050] The detection device 1 has a plurality of sealing films 35 covering the plurality of photodiodes PD. The plurality of sealing films 35 are arranged at intervals for each of the plurality of division regions DA. As shown in FIG. 4 , the plurality of sealing films 35 are arranged in a matrix in the first direction Dx and the second direction Dy. The sealing films 35 are made of an inorganic film such as a silicon nitride film or an aluminum oxide film, or a resin film such as acrylic. The sealing film 35 is not limited to a single layer, but may be a laminated film of two or more layers combining the above-mentioned inorganic insulating film and organic insulating film (resin film).

[0051] Adjacent sealing films 35 are separated by slits SLT extending in the first direction Dx and the second direction Dy. More specifically, the sealing films 35 of the division regions DA1 and DA3, which are adjacent in the second direction Dy, and the sealing films 35 of the division regions DA2 and DA4, which are adjacent in the second direction Dy, are separated by slits SLT (first slits) extending in the first direction Dx. The sealing films 35 of the division regions DA1 and DA2, which are adjacent in the first direction Dx, and the sealing films 35 of the division regions DA3 and DA4, which are adjacent in the first direction Dx, are separated by slits SLT (second slits) extending in the second direction Dy.

[0052] 4 to 6 , each of the plurality of division regions DA has a plurality of photodiodes PD (eight photodiodes PD) and one sealing film 35. In each of the plurality of division regions DA, one sealing film 35 is provided to cover the top surfaces and side walls of the plurality of photodiodes PD.

[0053] More specifically, as shown in Figures 5 and 6, the active layer 33 of the photodiode PD includes a sidewall 33s1 facing one side of the first direction Dx (the left side in Figure 5), a sidewall 33s2 opposite the sidewall 33s1 facing the other side of the first direction Dx (the right side in Figure 5), a sidewall 33s3 facing one side of the second direction Dy (the left side in Figure 6), and a sidewall 33s4 opposite the sidewall 33s3 facing the other side of the second direction Dy (the right side in Figure 6).

[0054] In each of the divided regions DA, one sealing film 35 covers the upper electrodes 32 of the photodiodes PD and also covers all the side walls 33 s 1 , 33 s 2 , 33 s 3 , and 33 s 4 of the active layer 33 .

[0055] In this way, the sealing film 35 is provided to cover the multiple photodiodes PD, thereby suppressing the intrusion of moisture from outside. Furthermore, the active layers 33 of the multiple photodiodes PD are provided separately for each division region DA, and the sealing film 35 is provided to cover the multiple photodiodes PD in each division region DA. As a result, as shown in FIG. 5 , even if a pinhole 35a is formed in the sealing film 35 in one division region DA (e.g., division region DA3) and moisture penetrates the multiple photodiodes PD in division region DA3, moisture penetration into the multiple photodiodes PD in the other division regions DA1, DA2, and DA4 is suppressed. As a result, even if the detection sensitivity of the photodiode PD in division region DA3 decreases due to moisture penetration, the detection sensitivity of at least the multiple photodiodes PD in the other division regions DA1, DA2, and DA4 can be suppressed from decreasing due to moisture penetration. Therefore, the detection device 1 is able to suppress a decrease in the detection sensitivity of the photodiodes PD compared to a configuration in which an active layer 33 is provided across the entire detection area AA and a single sealing film 35 is provided to cover multiple photodiodes PD.

[0056] 4 and 6, an extraction wiring 34 is connected to the upper electrode 32. The extraction wiring 34 is provided corresponding to the outermost photodiode PD in the second direction Dy. The extraction wiring 34 is provided on the upper electrode 32 of each divided region DA and extends in the second direction Dy. The extraction wiring 34 is provided along the sidewall 33s3 or the sidewall 33s4 of the active layer 33 in the second direction Dy, passes between the lower end of the sealing film 35 and the circuit formation layer 23, and is extracted to the outside of the sealing film 35. The extraction wiring 34 is connected to the power supply wiring 22 (see FIG. 3), and a sensor power supply signal VDDSNS (power supply) is supplied through the power supply wiring 22.

[0057] As a result, even in a configuration in which the upper electrodes 32 are provided separately for each division region DA and the sealing film 35 is provided to cover the multiple photodiodes PD in each division region DA, the sensor power supply signal VDDSNS (power supply) can be effectively supplied to the multiple photodiodes PD via the lead-out wiring 34. Note that the position, width, number, etc. of the lead-out wiring 34 are merely examples and can be changed as appropriate.

[0058] 4 to 6 are merely examples and can be modified as appropriate. For example, the photodiodes PD are arranged in two rows and four columns in the division area DA, but this is not limiting. At least one photodiode PD needs to be provided in the division area DA. Alternatively, the photodiodes PD may be arranged in three or more rows, three or fewer columns, or five or more columns in the division area DA.

[0059] Second Embodiment Fig. 7 is a plan view schematically showing a detection device according to a second embodiment. Fig. 8 is a cross-sectional view taken along line XIII-XIII' in Fig. 7. Fig. 9 is a cross-sectional view taken along line IX-IX' in Fig. 7. In the following description, the same components as those described in the above-mentioned embodiments are designated by the same reference numerals, and redundant description will be omitted.

[0060] 7 to 9 , in the detection device 1A according to the second embodiment, the divided regions DA1, DA2, DA3, and DA4 are arranged in the first direction Dx. The lengths of the divided regions DA1, DA2, DA3, and DA4 in the first direction Dx are each substantially equal to ¼ of the length of the detection region AA in the first direction Dx. The lengths of the divided regions DA1, DA2, DA3, and DA4 in the second direction Dy are each substantially equal to the length of the detection region AA in the second direction Dy.

[0061] A plurality of photodiodes PD are provided for each division area DA. That is, one photodiode PD is provided for one division area DA. As shown in Figures 8 and 9, in each division area DA, the photodiode PD is formed by stacking a lower electrode 31, an active layer 33, and an upper electrode 32 in this order. In this embodiment, the active layer 33 and the upper electrode 32 are provided to cover one lower electrode 31.

[0062] The plurality of sealing films 35 are provided for each division region DA and are arranged in the first direction Dx. The plurality of sealing films 35 adjacent to each other in the first direction Dx are separated by slits SLT extending in the second direction Dy.

[0063] In other words, each of the multiple divided regions DA has one photodiode PD and one sealing film 35. One sealing film 35 covers the upper electrode 32 and the side walls 33s1, 33s2, 33s3, and 33s4 of the active layer 33 of one photodiode PD.

[0064] As a result, as in the first embodiment described above, if a pinhole 35a is formed in the sealing film 35 in one division area DA (for example, division area DA1), even if the detection sensitivity of the photodiode PD in division area DA1 decreases due to moisture intrusion, the multiple photodiodes PD in the other division areas DA2, DA3, and DA4 can suppress the decrease in detection sensitivity due to moisture intrusion.

[0065] 7 and 9, the lead-out wiring 34 is provided along a sidewall 33s3 in the second direction Dy of the active layer 33 of the photodiode PD, and is led out of the sealing film 35. The lead-out wiring 34 is connected to the power supply wiring 22 (see FIG. 3), and is supplied with a sensor power supply signal VDDSNS (power supply).

[0066] In the second embodiment, four photodiodes PD are arranged in the first direction Dx, but the number of photodiodes PD is not limited to this. The detection device 1A may have three or five or more photodiodes PD arranged in the first direction Dx.

[0067] Although preferred embodiments of the present disclosure have been described above, the present disclosure is not limited to such embodiments. The contents disclosed in the embodiments are merely examples, and various modifications are possible within the scope of the present disclosure. Appropriate modifications made within the scope of the present disclosure naturally fall within the technical scope of the present disclosure. At least one of various omissions, substitutions, and modifications of components can be made within the scope of the gist of each of the above-described embodiments and modifications.

[0068] 1, 1A Detector 10 Sensor section 15 Gate line driving circuit 16 Signal line selection circuit 21 Substrate 31 Lower electrode 32 Upper electrode 33 Active layer 33s1, 33s2, 33s3, 33s4 Side wall 34 Lead wiring 35 Sealing film DA, DA1, DA2, DA3, DA4 Divided region PD Photodiode PX Sensor pixel VDDSNS Sensor power supply signal

Claims

1. A detection device comprising: a substrate having a plurality of divided regions; a plurality of photodiodes provided on the substrate, each of which is stacked in the order of a lower electrode, an active layer, and an upper electrode; and a plurality of sealing films covering the plurality of photodiodes, wherein each of the plurality of divided regions has at least one of the photodiodes and one of the sealing films, and in each of the plurality of divided regions, one of the sealing films covers a sidewall of the active layer.

2. The detection device according to claim 1, wherein the sealing films are arranged in a first direction, and adjacent sealing films in the first direction are separated by slits extending in a second direction intersecting the first direction.

3. The detection device described in claim 1, wherein the multiple sealing films are arranged in a matrix in a first direction and a second direction intersecting the first direction, the multiple sealing films adjacent to each other in the second direction are separated by a first slit extending in the first direction, and the multiple sealing films adjacent to each other in the first direction are separated by a second slit extending in the second direction.

4. The detection device according to claim 1, wherein each of the plurality of divided regions has a plurality of the photodiodes, the lower electrode is provided separately for each of the photodiodes, and the active layer and the upper electrode cover the plurality of lower electrodes and are provided separately for each of the divided regions.

5. The detection device according to claim 1, further comprising an interconnection line connected to the upper electrode, the interconnection line being provided along a portion of the side wall of the active layer of the photodiode and being extended to the outside of the sealing film.

6. The detection device described in claim 5, wherein the sealing films are arranged in a matrix in a first direction and a second direction intersecting the first direction, the lead-out wiring is provided corresponding to the outermost photodiode in the second direction and is provided along the side wall of the active layer in the second direction, and power is supplied from outside the sealing film.

7. The detection device described in claim 5, wherein a plurality of the sealing films are arranged in a first direction, the lead-out wiring is provided along the sidewall of the active layer of the photodiode in a second direction intersecting the first direction, and power is supplied from outside the sealing film.

8. The detection device according to claim 1, wherein the photodiode is an OPD (Organic Photodiode).

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