Electromagnetic interference shielding material and method of obtaining thereof

Abstract

The present invention relates to a vapor deposition-based production method (100) for integrating MXene, which does not comprise functional groups and has high conductivity, into electromagnetic shielding applications, and to an electromagnetic interference shielding material obtained by the method (100).

Description

[0001] ELECTROMAGNETIC INTERFERENCE SHIELDING MATERIAL AND

[0002] METHOD OF OBTAINING THEREOF

[0003] Technical Field

[0004] The present invention relates to a vapor deposition-based production method for integrating MXene, which does not comprise functional groups and has high conductivity, into electromagnetic shielding applications, and to an electromagnetic interference shielding material obtained by the method.

[0005] Background of the Invention

[0006] With the development of electrical and electronic devices, the need for highly efficient Electromagnetic Interference (EMI) shielding materials has become increasingly more urgent. Currently, widely used metal materials have to meet the increasing EMI shielding demand due to their negative characteristics such as low flexibility, high density and corrosion sensitivity. On the other hand, polymer composites are preferred for flexible electronic products as they have advantages such as high flexibility, light weight, low cost and chemical stability.

[0007] MXenes, known as 2-Dimensional (2D) transition metal carbides, nitrates and carbonitrides, which have been recently recognized as a new family of materials with high promise for use in Electromagnetic Shielding (EMS) applications, attract attention for their high specific surface area, high electrical conductivity and metal-like characteristics. These materials have important characteristics in terms of providing protection against electromagnetic radiation from electric and magnetic fields. The large surface area helps to attenuate electromagnetic radiation by both reflecting and absorbing it. Robust mechanical characteristics enable the shielding material to withstand physical stresses and deformations. Protection against electromagnetic radiation is effective in a wide frequency range, from radio waves to microwaves and even to terahertz radiation. However, the presence of functional groups formed during the commonly used chemical etching production process and reduce electrical conductivity, and factors that are difficult to control, such as thickness, orientation and molecular structure, have caused the expected performance in related applications not to be achieved. In the case of electromagnetic shielding, how MXenes are applied to the surface and the type of MXene used directly determine the effectiveness of electromagnetic shielding.

[0008] For this reason, in order to overcome the deficiencies mentioned above, there is a need for a new method that will enable MXene to be used more efficiently in electromagnetic shielding applications.

[0009] The Chinese patent document no. CN110846881, an application included in the state of the art, discloses preparation method of Co3O4 / PANUMXene / PI electromagnetic shielding fabric. The preparation method comprises the steps: pre-treating a PI fabric, and then carrying out plasma treatment; spraying MXene solution to the surface of the treated PI fabric for reaction; spraying CO3O4 / PANI nanowire solution on the obtained MXene / PI composite for reaction; treating the obtaincdCosC PANI / MXcnc / PI composite in a PDMS (polydimethylsiloxane) solution. The fabric obtained by the method has excellent conductivity and electromagnetic shielding performance.

[0010] Summary of the Invention

[0011] An object of the present invention is to realize a vapor deposition-based production method for integrating MXene, which does not comprise functional groups and has high conductivity, into electromagnetic shielding applications, and an electromagnetic interference shielding material obtained by the method. Detailed Description of the Invention

[0012] “Electromagnetic Interference Shielding Material and Method of Obtaining Thereof’ realized to fulfd the objectives of the present invention is shown in the figures attached, in which:

[0013] Figure 1 is a flowchart of the inventive method.

[0014] 100. Method

[0015] The inventive method (100) for obtaining a vapor deposition-based electromagnetic interference shielding material for integrating MXene, which does not comprise functional groups and has high conductivity, into electromagnetic shielding applications comprises the steps of obtaining the metal films required for growing the MXene structure on the substrate by physical vapor deposition (101); growing MXene structure on the substrate surface by applying chemical vapor deposition process to metal films obtained on the substrate (102); forming a composite material by bonding polymer resins with a substrate on which the MXene structure has been grown (103); and obtaining electromagnetic interference shielding material with high electrical shielding performance by reinforcing composite materials with nanoparticles to increase electrical properties (104).

[0016] In the step of obtaining the metal films required for growing the MXene structure on the substrate by physical vapor deposition (101) of the inventive method (100), the molybdenum / titanium thin film that will be used as a precursor on a carbon or fabric substrate is grown to a thickness of 5-500 nm in a rotary thermal evaporation system by using the thermal evaporation which is a physical evaporation method or sputtering method. Then, the copper thin film that will be used as a catalyst on the precursor film layer is grown to a thickness of 5-500 nm by thermal evaporation method which is a physical vapor deposition method.

[0017] In the step of growing MXene structure on the substrate surface by applying chemical vapor deposition process to metal films obtained on the substrate (102) of the inventive method (100), the thin copper films stored on molybdenum substrates, i.e. copper-coated precursor molybdenum, are placed in a horizontal chemical vapor deposition (CVD) furnace and the furnace is subjected to hydrogen (H2) purging by adjusting the CH4 / H2 flow rate so as to be between 0.05-0.5 before heating. The methane (CH4) flow is changed between 1-25 seem (standard cubic centimetres per minute) depending on the desired thickness. The substrate is kept in the furnace at 900-1200°C for between 1 minute-60 minutes. When the process is completed, the methane flow is shut off and the MXene structure is grown on the substrate by rapidly reducing the temperature.

[0018] In the step of forming a composite material by bonding polymer resins with a substrate on which the MXene structure has been grown (103) of the inventive method (100), the composite structure is obtained by combining the substrate thermoplastic resins on which the MXene structure is grown with any of the methods in the form of hot press or autoclave.

[0019] In the step of obtaining electromagnetic interference shielding material with high electrical shielding performance by reinforcing composite materials with nanoparticles to increase electrical properties (104) of the inventive method (100), nanoparticles in the form of carbon nanotubes, graphene, silver nanowires and iron carbides are integrated into the composite material.

[0020] A material which provides electromagnetic parasitic interference protection in a wide frequency range including radio waves, micro waves and terahertz radiation is obtained by the inventive method (100) and this material is used in electronic and electrical devices.

[0021] The problems of non-adhesion to the surface, orientation and homogeneous coating of MXenes are solved in a single step by using fabric as substrate in the inventive method (100). The biggest difference of the said method (100) from the current technique is the step of growing MXenes directly on the substrate.

[0022] Within these basic concepts; it is possible to develop various embodiments of the inventive “Electromagnetic Interference Shielding Material and Method (100) of

[0023] Obtaining Thereof’; the invention cannot be limited to examples disclosed herein and it is essentially according to claims.

Claims

CLAIMS1. A method (100) for obtaining a vapor deposition-based electromagnetic interference shielding material for integrating MXene, which does not comprise functional groups and has high conductivity, into electromagnetic shielding applications characterized by comprising the steps of obtaining the metal films required for growing the MXene structure on the substrate by physical vapor deposition (101); growing MXene structure on the substrate surface by applying chemical vapor deposition process to metal films obtained on the substrate (102); forming a composite material by bonding polymer resins with a substrate on which the MXene structure has been grown (103); and obtaining electromagnetic interference shielding material with high electrical shielding performance by reinforcing composite materials with nanoparticles to increase electrical properties (104).

2. A method (100) according to Claim 1; characterized in that in the step of obtaining the metal films required for growing the MXene structure on the substrate by physical vapor deposition (101), the molybdenum / titanium thin film that will be used as a precursor on a carbon or fabric substrate is grown to a thickness of 5-500 nm in a rotary thermal evaporation system by using the thermal evaporation which is a physical evaporation method or sputtering method.

3. A method (100) according to Claim 2; characterized in that in the step of obtaining the metal films required for growing the MXene structure on the substrate by physical vapor deposition (101), the copper thin film that will be used as a catalyst on the precursor film layer is grown to a thickness of 5-500 nm by thermal evaporation method which is a physical vapor deposition method.

4. A method (100) according to Claim 1; characterized in that in the step of growing MXene structure on the substrate surface by applying chemical vapor deposition process to metal films obtained on the substrate (102), the thin copper films stored on molybdenum substrates, i.e. copper-coated precursor molybdenum, are placed in a horizontal chemical vapor deposition (CVD) furnace and the furnace is subjected to hydrogen (H2) purging by adjusting the CH4 / H2 flow rate so as to be between 0.05-0.5 before heating.

5. A method (100) according to Claim 4; characterized in that in the step of growing MXene structure on the substrate surface by applying chemical vapor deposition process to metal films obtained on the substrate (102), the methane (CH4) flow is changed between 1-25 seem depending on the desired thickness.

6. A method (100) according to Claim 4 or 5; characterized in that in the step of growing MXene structure on the substrate surface by applying chemical vapor deposition process to metal films obtained on the substrate (102), the substrate is kept in the furnace at 900-1200°C for between 1 minute-60 minutes and when the process is completed, the MXene structure is grown on the substrate by shutting off the methane flow and rapidly reducing the temperature.

7. A method (100) according to Claim 1; characterized in that in the step of forming a composite material by bonding polymer resins with a substrate on which the MXene structure has been grown (103), the composite structure is obtained by combining the substrate thermoplastic resins on which the MXene structure is grown with any of the methods in the form of hot press or autoclave.

8. A method (100) according to any of the Claim 1; characterized in that in the step of obtaining electromagnetic interference shielding material with high electrical shielding performance by reinforcing composite materials with nanoparticles to increase electrical properties (104), nanoparticles in the form ofcarbon nanotubes, graphene, silver nanowires and iron carbides are integrated into the composite material.

9. An electromagnetic interference shielding material which provides electromagnetic parasitic interference shielding in a wide frequency range including radio waves, microwaves and terahertz radiation by following the steps of method (100) above and is used in electronic and electrical devices.

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