Quantum dot ink, quantum-dot-layer patterning method, and quantum-dot light-emitting device

Abstract

Disclosed in the present disclosure are a quantum dot ink, a quantum-dot-layer patterning method, and a quantum-dot light-emitting device. When a patterned quantum dot layer is manufactured by using the quantum dot ink in the present disclosure, first ligands on surfaces of quantum dots change under the action of illumination (e.g., ultraviolet irradiation and exposure) and a photobase generator, such that the solubility of a quantum dot material changes. In this way, the solubility of a quantum dot material in an exposure area is different from the solubility of the quantum dot material in a non-exposure area, such that quantum dots in the non-exposure area can be eluted and removed by means of selecting a proper developer, thereby forming a patterned quantum dot layer in the exposure area. Therefore, the quantum dot ink provided in the embodiments of the present disclosure can directly form a patterned quantum dot layer by means of a photoetching process, thereby avoiding the technical difficulty in the prior art of it being necessary to use a printing nozzle with higher precision during an inkjet printing process in order to improve the resolution, and the present disclosure can effectively realize the production of high-resolution QLED products.

Description

Quantum dot ink, quantum dot layer patterning method, and quantum dot light-emitting device

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of the People's Republic of China on November 20, 2023, with application number 202311549257.8 and invention name "Quantum dot ink, quantum dot layer patterning method and quantum dot light-emitting device", the entire contents of which are incorporated by reference into this application. Technical Field

[0003] The present disclosure relates to the field of display technology, and in particular to a quantum dot ink, a quantum dot layer patterning method, and a quantum dot light-emitting device. Background Art

[0004] Quantum dots (QDs), also known as nanocrystals, are nanoparticles composed of Group II-VI or Group III-V elements. They typically range in size from 1 to 20 nm. Due to the quantum confinement of electrons and holes, the continuous energy band structure is transformed into a discrete energy level structure, allowing them to emit fluorescence upon stimulation.

[0005] With the advancement of quantum dot production technology, the stability and luminous efficiency of quantum dots have continued to improve, and research on quantum dot light-emitting diodes (QLEDs) has continued to deepen. The application prospects of QLEDs in the display field are becoming increasingly bright. However, the production efficiency of QLEDs has not yet reached the level of mass production. The most important reason is that there has not yet been a breakthrough in high-resolution patterning technology for QLEDs. The inorganic nanoparticle characteristics of quantum dots make it difficult to form films and pattern them through evaporation, and it is difficult to achieve high resolution through inkjet printing.

[0006] Summary of the Invention

[0007] The present disclosure provides a quantum dot ink, a quantum dot layer patterning method, and a quantum dot light-emitting device. The specific solutions are as follows:

[0008] A quantum dot ink provided by an embodiment of the present disclosure includes a quantum dot material and a photobase generator. The quantum dot material includes quantum dots and a first ligand connected to the surface of the quantum dots. The quantum dot material is configured so that under the action of light and the photobase generator, the first ligand on the surface of the quantum dots changes to change the solubility of the quantum dot material.

[0009] Optionally, in the above-mentioned quantum dot ink provided in the embodiment of the present disclosure, the quantum dot ink also includes a crosslinker, the first ligand includes a first crosslinking group, the crosslinker includes a second crosslinking group, one of the first crosslinking group and the second crosslinking group is a thiol group, and the other of the first crosslinking group and the second crosslinking group is a group that can undergo a crosslinking reaction with the thiol group and the photobase generator under light.

[0010] Optionally, in the quantum dot ink provided in the embodiment of the present disclosure, the other of the first cross-linking group and the second cross-linking group includes at least one of a carbon-carbon double bond, a carbon-carbon triple bond, an epoxy group, and an isocyanate group.

[0011] Optionally, in the quantum dot ink provided in the embodiment of the present disclosure, the cross-linking agent includes at least two second cross-linking groups.

[0012] Optionally, in the quantum dot ink provided in the embodiment of the present disclosure, the cross-linking agent further includes a solubility regulating structure connected to the second cross-linking group.

[0013] Optionally, in the above-mentioned quantum dot ink provided in the embodiment of the present disclosure, the solubility regulating structure includes at least one weak polar group and a hydrocarbon group with a carbon chain length greater than or equal to 10 carbon atoms, or the solubility regulating structure includes at least one strong polar group and a hydrocarbon group with a carbon chain length less than 10 carbon atoms.

[0014] Optionally, in the quantum dot ink provided in the embodiment of the present disclosure, the weak polar group includes a methyl group, a phenyl group or an aldehyde group, and the strong polar group includes a sulfonic acid group, a carboxyl group, a nitroso group, a cyano group, a hydroxyl group, an amide group, a phenolic hydroxyl group, a thiol group or an amino group.

[0015] Optionally, in the above-mentioned quantum dot ink provided in the embodiment of the present disclosure, the first ligand further includes: a connecting group connected to the first cross-linking group, and a coordination group connected to the connecting group; the coordination group is configured to coordinate with the quantum dot.

[0016] Optionally, in the quantum dot ink provided in the embodiment of the present disclosure, the coordination group includes at least one of -NH2, -SH, -COOH, -P, and -P=O.

[0017] Optionally, in the quantum dot ink provided in the embodiments of the present disclosure, the connecting group is an alkyl segment or a polyether segment.

[0018] Optionally, in the quantum dot ink provided in the embodiment of the present disclosure, the alkyl segment has at least one double bond or benzene ring group, or the alkyl segment is a straight-chain alkyl group containing 1C-30C;

[0019] The polyether segment includes polyethylene oxide.

[0020] Optionally, in the quantum dot ink provided in the embodiment of the present disclosure, the photobase generator includes at least one of a cobalt amine complex, a quaternary ammonium salt, a carbamate, an oxime ester, an amidine, a guanidine, a -aminoketone, a polynitrogen heterocycle, and a tetraphenylborate.

[0021] Optionally, in the above-mentioned quantum dot ink provided in an embodiment of the present disclosure, the photobase generator is configured to generate a second ligand under light, and the polarity of the second ligand is opposite to that of the first ligand; the second ligand includes a basic group containing a lone pair of electrons, and the basic group is configured to coordinate with the surface of the quantum dot so that the second ligand replaces the first ligand.

[0022] Optionally, in the quantum dot ink provided in the embodiments of the present disclosure, the basic group is an amino group.

[0023] Optionally, in the quantum dot ink provided in the embodiment of the present disclosure, the polarity of the first ligand is weak polarity, and the polarity of the second ligand is strong polarity; or, the polarity of the first ligand is strong polarity, and the polarity of the second ligand is weak polarity.

[0024] Optionally, in the quantum dot ink provided in the embodiment of the present disclosure, the first ligand includes: a coordination group that coordinates and binds to the quantum dot, and a first polar group connected to the coordination group; the second ligand further includes a second polar group connected to the basic group; wherein,

[0025] One of the first polar group and the second polar group includes an alkyl segment or a polyether segment and a hydrocarbon group with a carbon chain length greater than 10 carbon atoms, and the other of the first polar group and the second polar group includes at least one of sulfonic acid, carboxyl, nitroso, cyano, hydroxyl, amide, phenolic hydroxyl, thiol, and amino, and a hydrocarbon group with a carbon chain length less than 10 carbon atoms.

[0026] Optionally, in the quantum dot ink provided in the embodiment of the present disclosure, the photobase generator has the general structural formula: Wherein, R1 and R2 are at least one of an alkyl chain, an olefin chain, a phenyl group, an ester, a carbonyl group, and an ether bond.

[0027] Accordingly, the present disclosure also provides a method for patterning a quantum dot layer, comprising:

[0028] The quantum dot film is formed by using the quantum dot ink provided in the embodiment of the present disclosure;

[0029] Under the cover of a mask, the quantum dot film is exposed to light, and the first ligand of the quantum dot material in the exposed area changes under the action of light and a photobase generator, thereby changing the solubility of the quantum dot material;

[0030] The quantum dots in the unexposed area are washed away with a developer to obtain a patterned quantum dot layer.

[0031] Optionally, in the above-mentioned quantum dot layer patterning method provided in the embodiment of the present disclosure, the first ligand of the quantum dot material in the exposed area changes under the action of light and the photobase generator, specifically:

[0032] The first cross-linking group of the first ligand in the exposed area and the second cross-linking group of the cross-linking agent undergo a cross-linking reaction under the action of the base generated by the photobase generator.

[0033] Optionally, in the above-mentioned quantum dot layer patterning method provided in the embodiment of the present disclosure, the first ligand of the quantum dot material in the exposed area changes under the action of light and the photobase generator, specifically:

[0034] The basic group of the second ligand generated by the photobase generator in the exposed area is coordinated and combined with the surface of the quantum dot, so that the second ligand replaces the first ligand.

[0035] Accordingly, an embodiment of the present disclosure further provides a quantum dot layer, comprising a plurality of patterned sub-pixels, each of which comprises a quantum dot material, the quantum dot material comprising quantum dots and a cross-linked network connected to the surface of the quantum dots, the cross-linked network comprising at least one of the following structures:

[0036] Optionally, in the quantum dot layer provided in the embodiment of the present disclosure, the structure of the cross-linked network is

[0037] Accordingly, an embodiment of the present disclosure also provides a quantum dot layer, comprising a plurality of patterned sub-pixels, each of the sub-pixels comprising a quantum dot material, the quantum dot material comprising a quantum dot and a first ligand and a second ligand connected to the surface of the quantum dot, the polarity of the second ligand being opposite to the polarity of the first ligand, and the second ligand comprising a basic group containing a lone pair of electrons.

[0038] Optionally, in the quantum dot layer provided in the embodiment of the present disclosure, the general structural formula of the second ligand is: Among them, R1 is at least one of an alkyl chain, an olefin chain, a phenyl group, an ester group, a carbonyl group, and an ether bond.

[0039] Correspondingly, the embodiments of the present disclosure further provide a quantum dot light-emitting device, comprising the above-mentioned quantum dot layer provided by the embodiments of the present disclosure.

[0040] Correspondingly, the embodiments of the present disclosure further provide a method for manufacturing a quantum dot light-emitting device, comprising forming a quantum dot layer using the above-mentioned quantum dot layer patterning method provided in the embodiments of the present disclosure.

[0041] Correspondingly, an embodiment of the present disclosure further provides a display device, comprising the above-mentioned quantum dot light-emitting device provided by an embodiment of the present disclosure.

[0042] The beneficial effects of the embodiments of the present disclosure are as follows:

[0043] The embodiments of the present disclosure provide a quantum dot ink, a method for patterning a quantum dot layer, and a quantum dot light-emitting device. When the quantum dot ink of the present disclosure is used to produce a patterned quantum dot layer, the first ligand on the surface of the quantum dot changes under the action of light (e.g., ultraviolet light exposure) and a photobase generator, thereby changing the solubility of the quantum dot material. In this way, the solubility of the quantum dot material in the exposed area is different from that in the non-exposed area, so that a suitable developer can be selected to elute and remove the quantum dots in the non-exposed area, forming a patterned quantum dot layer in the exposed area. Therefore, the quantum dot ink provided by the embodiments of the present disclosure can directly form a patterned quantum dot layer through a photolithography process, avoiding the technical difficulty of using a higher-precision print head to improve the resolution in the related art using an inkjet printing process. The present disclosure can effectively achieve high-resolution QLED product production. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] FIG1 is a schematic diagram of the reaction mechanism of the click chemistry reaction between the thiol group of the first ligand in the exposed area and the epoxy group of the cross-linking agent;

[0045] FIG2 is a schematic diagram of the reaction mechanism of the click chemistry reaction between the thiol group of the first ligand in the exposed area and the carbon-carbon double bond of the cross-linking agent;

[0046] FIG3 is a schematic diagram showing the principle of a photobase generator generating a second ligand having an amino group after light irradiation to guide the photolithographic patterning of quantum dots;

[0047] FIG4 is a schematic diagram of the reaction mechanism of the second ligand replacing the first ligand;

[0048] FIG5 is a flow chart of a method for patterning a quantum dot layer according to an embodiment of the present disclosure;

[0049] 6A-6L are schematic structural diagrams of the method for manufacturing a quantum dot light-emitting device according to an embodiment of the present disclosure after executing each step;

[0050] FIG7 is a schematic structural diagram of another quantum dot light-emitting device provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0051] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. And in the absence of conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0052] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the usual meanings understood by persons of ordinary skill in the field to which this disclosure belongs. The words “include” or “comprise” and the like used in this disclosure mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. The words “connect” or “connected” and the like are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. “Inside”, “outside”, “upper”, “lower”, etc. are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0053] It should be noted that the sizes and shapes of the figures in the accompanying drawings do not reflect the actual scale and are only for the purpose of illustrating the present disclosure. The same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions.

[0054] Photoresponsive surface ligands enable direct photolithographic patterning of quantum dots. This is achieved by utilizing the photochemical reaction of the photosensitive groups to alter the surface chemistry of the quantum dots, thereby causing changes in their solubility and colloidal stability. Therefore, efficient photochemical reactions are fundamental to achieving photolithographic patterning of quantum dots.

[0055] An embodiment of the present disclosure provides a quantum dot ink, including a quantum dot material and a photobase generator. The quantum dot material includes quantum dots and a first ligand connected to the surface of the quantum dots. The quantum dot material is configured so that under the action of light and the photobase generator, the first ligand on the surface of the quantum dots changes to change the solubility of the quantum dot material.

[0056] When the quantum dot ink provided in the embodiments of the present disclosure is used to produce a patterned quantum dot layer, the first ligand on the surface of the quantum dot changes under the action of light (e.g., ultraviolet light exposure) and a photobase generator, thereby changing the solubility of the quantum dot material. As a result, the solubility of the quantum dot material in the exposed area is different from that in the non-exposed area, so that a suitable developer can be selected to elute and remove the quantum dots in the non-exposed area, forming a patterned quantum dot layer in the exposed area. Therefore, the quantum dot ink provided in the embodiments of the present disclosure can directly form a patterned quantum dot layer through a photolithography process, avoiding the technical difficulty of using a higher-precision print head to improve the resolution in the related art using an inkjet printing process. The present disclosure can effectively achieve high-resolution QLED product production.

[0057] In a specific implementation, in the quantum dot ink provided in the embodiment of the present disclosure, the quantum dot ink further includes a crosslinker, the first ligand includes a first crosslinking group, the crosslinker includes a second crosslinking group, one of the first crosslinking group and the second crosslinking group is a thiol group, and the other of the first crosslinking group and the second crosslinking group is a group capable of undergoing a crosslinking reaction with the thiol group and the photobase generator under light. In this way, when forming a patterned quantum dot layer, exposure is performed under the shielding of a mask, and the photobase generator is exposed to light to generate a base, which catalyzes a click chemistry reaction of the thiol series, thereby causing a change in the solubility of the quantum dot material. The original good solvent is used as a developer, and the quantum dot material in the unexposed area is washed away by the original solvent. The first crosslinking group and the second crosslinking group in the exposed area undergo a crosslinking reaction to form a crosslinked network and are retained, thereby forming a patterned quantum dot layer in the exposed area.

[0058] In a specific implementation, in the quantum dot ink provided in the embodiment of the present disclosure, the other of the first cross-linking group and the second cross-linking group includes at least one of a carbon-carbon double bond, a carbon-carbon triple bond, an epoxy group, and an isocyanate group. The base generated by the photobase generator after being exposed to light can catalyze click chemistry reactions between carbon-carbon double bonds and thiol groups, carbon-carbon triple bonds and thiol groups, epoxy groups and thiol groups, and isocyanate groups and thiol groups, thereby forming a stable cross-linked network between the quantum dots in the exposed area. In this way, the solubility of the quantum dot material in the exposed area is very different from that of the quantum dot material in the unexposed area, so that the quantum dots in the unexposed area are eluted and removed using the original solvent, thereby forming a patterned quantum dot layer in the exposed area.

[0059] Optionally, the first cross-linking group of the first ligand and the second cross-linking group of the cross-linking agent are different reactive functional groups that undergo click chemistry reaction. When the first cross-linking group of the first ligand is a thiol group, the second cross-linking group of the cross-linking agent is a carbon-carbon double bond, a carbon-carbon triple bond, an epoxy group or an isocyanate; conversely, when the first cross-linking group of the first ligand is a carbon-carbon double bond, a carbon-carbon triple bond, an epoxy group or an isocyanate, the second cross-linking group of the cross-linking agent is a thiol group.

[0060] Base-catalyzed sulfhydryl (R'-SH) and carbon-carbon double bond Taking the click chemistry reaction of Michael addition as an example, its mechanism is as follows:

[0061] Initiation

[0062] Propagation (polar solvent)

[0063] Propagation(non-polar solvent)

[0064] Wherein, B is a base, and R and R' can be an alkyl chain, a hydrocarbon chain, an ester group, a carbonyl group, etc.

[0065] Specifically, the principle of the click chemistry reaction between a thiol group and a carbon-carbon triple bond, an epoxy group, or an isocyanate group is similar to the principle of the click chemistry reaction between a thiol group and a carbon-carbon double bond, and will not be described in detail here.

[0066] In practice, to enhance the stability of the crosslinked network, the crosslinker in the quantum dot ink provided in the embodiments of the present disclosure includes at least two second crosslinking groups. The greater the number of second crosslinking groups, the stronger the subsequent reaction with the first crosslinking groups of the first ligand, and the better the patterning effect of the quantum dot layer.

[0067] In a specific implementation, in the quantum dot ink provided in the embodiment of the present disclosure, the crosslinking agent further includes a solubility regulating structure connected to the second crosslinking group. In this way, a suitable solubility regulating structure can be selected according to the solvent polarity of the quantum dot ink. For example, in a non-polar solvent, the solubility regulating structure includes at least one weak polar group and a hydrocarbon group with a carbon chain length greater than or equal to 10 carbon atoms, and the weak polar group includes, for example, a methyl group, a phenyl group, or an aldehyde group; in a polar solvent, the solubility regulating structure includes at least one strong polar group and a hydrocarbon group with a carbon chain length less than 10 carbon atoms, and the strong polar group includes, for example, a sulfonic acid group, a carboxyl group, a nitroso group, a cyano group, a hydroxyl group, an amide group, a phenolic hydroxyl group, a thiol group, or an amino group.

[0068] In a specific implementation, in the above-mentioned quantum dot ink provided in the embodiment of the present disclosure, the first ligand on the surface of the quantum dot further includes: a linking group connected to the first cross-linking group, and a coordination group connected to the linking group; the coordination group is configured to coordinate with the quantum dot. For example, the general structural formula of the first ligand is DEF, wherein D is a coordination group (anchor group) coordinated with the surface of the quantum dot, and D can be one or more of a thiol (-SH), a carboxyl (-COOH), an amino (-NH2), a phosphino (-P-), and a phosphinooxy (-P=O); E is a linking group, which is an alkyl segment or a polyether segment (such as polyethylene oxide, etc.), and the alkyl segment has at least one double bond or a benzene ring group, and the alkyl segment is preferably a straight-chain alkyl containing 1C-30C; F is a first cross-linking group (a functional group that can undergo click chemistry reaction), and F includes but is not limited to a thiol, a carbon-carbon double bond, a carbon-carbon triple bond, an epoxy group, and an isocyanate. Among them, the more F there is, the stronger the subsequent reaction with the cross-linking agent, and the better the patterning effect of the quantum dot.

[0069] In specific implementations, in the quantum dot ink provided in the embodiments of the present disclosure, the photobase generator is a photoinitiator that generates alkaline species upon illumination. The photobase generator primarily includes at least one of a cobalt amine complex, a quaternary ammonium salt, a carbamate, an oxime ester, an amidine, a guanidine, a β-aminoketone, a polynitrogen heterocycle, or a tetraphenylborate. Considering solubility, the photobase generator is preferably a nonionic photobase generator, such as a carbamate, an oxime ester, an amidine, a guanidine, a β-aminoketone, or a polynitrogen heterocycle.

[0070] In a specific implementation, the quantum dot ink provided in the embodiments of the present disclosure further includes a solvent, which includes a polar solvent and a non-polar solvent. Specifically, the non-polar solvent is characterized by a dielectric constant less than 3.6, such as cyclohexane, petroleum ether, octane, trimethylpentane, carbon tetrachloride, trichlorotrifluoroethane, p-xylene, chlorobenzene, o-dichlorobenzene, ether, diethyl ether, tetrahydrofuran, hexane, pentane, toluene, chlorobenzene, etc.; the polar solvent is characterized by a dielectric constant greater than 3.6, such as methanol, ethanol, isopropanol, ethyl acetate, acetonitrile, propylene glycol methyl ether acetate, acetone, acetic acid, pyridine, N,N-dimethylformamide, dimethyl sulfoxide, etc. The polar solvent or non-polar solvent can be selected based on the polarity of the first ligand of the quantum dot material.

[0071] Optionally, the quantum dots are semiconductor nanocrystals with quantum confinement effects, including but not limited to II-VI group quantum dots such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgSe, HgTe, HgS, HgxCd1-xTe, HgxCd1-xS, HgxCd1-xSe, HgxZn1-xTe, CdxZn1-xSe, or CdxZn1-xS, where 0 < x < 1; or the quantum dots are III-V group quantum dots such as InP, InAs, InSb, GaAs, GaP, GaN, GaSb, InN, InSb, AlP, AlN, AlAs; or VI-VI group quantum dots such as PbS, PbSe, PbTe; or, the quantum dots can be quantum dots with a core-shell structure, including CdSe@ZnS, CdSe@CdS, InP@ZnS, CdTe@CdSe, CdSe@ZnTeZnTe@CdSe, ZnSe@CdS or Cd1-xZnxS@ZnS; or the quantum dots are ABX3 type perovskite quantum dots or nanocrystals, A is CH3NH 3+ (methylamine), NH2CH=NH2 (formamidine), Cs + one or more of, B is Pb 2+ 、Sn 2+ one or two of, X is Cl - 、Br - 、I - one or more of, for example including CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbI3, CsPbBr3, CsPbCl3, CsPbI3; or other quantum dots such as CuInS2, CuInSe2, AgInS2, etc., as long as the quantum dots coated with organic ligands are applicable.

[0072] 7]Taking the first cross-linked structure of the first ligand in the quantum dot ink as a thiol group and the second cross-linked structure of the cross-linking agent as an epoxy group as an example, the method for patterning the quantum dot layer will be described. Among them, the first ligand on the surface of the quantum dot is a polythiol (the structure is ), the cross-linking agent is a polyepoxy (the structure is ), the photoacid generator is an xanthenone-reduced amidine photoacid generator (X-DBN), and the solvent is propylene glycol methyl ether acetate.

[0073] First, synthesize a quantum dot material with oleic acid as a ligand (such as a CdSe@ZnS core-shell structure quantum dot), and then perform ligand exchange on the CdSe@ZnS core-shell structure quantum dot with oleic acid as a ligand to form a new first ligand on the surface of the CdSe@ZnS core-shell structure quantum dot (QD) Finally, it is dispersed in ether ester solvents such as propylene glycol methyl ether acetate at a concentration of 20g / L, and a tetraepoxy crosslinking agent ( The film was spin-coated with a photocatalytic converter (X-DBN, concentration of 1 g / L) and a photobase generator (X-DBN, concentration of 0.5 g / L). The film was then irradiated with a UV lamp for 2 minutes under a photomask at a dose of 10 J / cm 2 The thiol group of the first ligand in the exposed area undergoes a click chemical reaction with the epoxy group of the crosslinker to form a crosslinked network. The reaction formula for the crosslinked network is shown in Figure 1. Finally, the quantum dots in the non-exposed area are removed by development with propylene glycol methyl ether acetate, and the solvent is dried to remove the patterned quantum dot layer in the exposed area.

[0074] Taking the first cross-linking structure of the first ligand in the quantum dot ink as a thiol group and the second cross-linking structure of the cross-linking agent as a carbon-carbon double bond as an example, the patterning method of the quantum dot layer is described. ), the cross-linking agent is a multi-double bond (structure is ), the photobase generator is 2-(2-nitrophenyl)propyloxycarbonyldiethylamine (NPPOC-dea), and the solvent is propylene glycol methyl ether acetate.

[0075] First, a quantum dot material with oleic acid as the ligand (such as CdSe@ZnS core-shell structure quantum dots) is synthesized, and then the CdSe@ZnS core-shell structure quantum dots with oleic acid as the ligand are ligand-exchanged to form a new first ligand on the surface of the CdSe@ZnS core-shell structure quantum dots (QD) Finally, it is dispersed in ether ester solvents such as propylene glycol methyl ether acetate at a concentration of 20g / L, and a four-double bond crosslinking agent ( The film was spin-coated with a photocatalytic converter (NPPOC-dea, concentration of 1 g / L) and a photobase generator (NPPOC-dea, concentration of 0.5 g / L). The film was then irradiated with a UV lamp for 2 minutes under a photomask at a dose of 10 J / cm 2 The thiol group of the first ligand in the exposed area undergoes a click chemistry reaction with the carbon-carbon double bond of the crosslinker to form a crosslinked network. The reaction formula for the formation of the crosslinked network is shown in Figure 2. Finally, propylene glycol methyl ether acetate is used for development to remove the quantum dots in the non-exposed area, and the solvent is dried to remove the solvent, resulting in a patterned quantum dot layer in the exposed area.

[0076] It should be noted that the first cross-linking group of the first ligand is a thiol group, and the second cross-linking structure of the cross-linking agent is a carbon-carbon triple bond, an epoxy group or an isocyanate group. The process of patterning the quantum dot layer by the principle of click chemistry reaction is similar to the above-mentioned process of patterning the quantum dot layer by the principle of click chemistry reaction between the thiol group and the epoxy group or the carbon-carbon double bond, and will not be described in detail here.

[0077] It should be noted that the embodiment of the present disclosure uses the first cross-linking group of the first ligand as a thiol group and the second cross-linking structure of the cross-linker as an example to illustrate the method of quantum dot patterning; of course, it is also possible to obtain the first cross-linking group of the first ligand as an epoxy group, a carbon-carbon double bond, a carbon-carbon triple bond, an epoxy group or an isocyanate group through ligand exchange, and the second cross-linking structure of the cross-linker as a thiol group, to achieve a click chemistry reaction and form a patterned quantum dot layer.

[0078] In a specific implementation, in the above-mentioned quantum dot ink provided by the embodiment of the present disclosure, the photobase generator is configured to generate a second ligand under light (e.g., ultraviolet light exposure), and the polarity of the second ligand is opposite to that of the first ligand; the second ligand includes a basic group containing a lone pair of electrons, and the basic group is configured to coordinate with the surface of the quantum dot so that the second ligand replaces the first ligand. In this way, when forming a patterned quantum dot layer, exposure is performed under the shielding of the mask, and the photobase generator is exposed to light to generate a second ligand with a polarity opposite to that of the first ligand on the original quantum dot surface. The second ligand can replace the first ligand, thereby causing the solubility of the quantum dot material to change. The original good solvent is used as a developer, and the quantum dot material in the unexposed area is washed away by the original solvent. The surface of the quantum dot in the exposed area is retained because it has a second ligand with a polarity opposite to that of the first ligand, thereby forming a patterned quantum dot layer in the exposed area. In addition, the quantum dot ink provided in this embodiment can achieve patterning of the quantum dot layer without adding a cross-linking agent.

[0079] In a specific implementation, in the quantum dot ink provided by the embodiment of the present disclosure, the basic group may be an amino group (-NH2). The amino group with a lone pair of electrons can easily replace the first ligand on the surface of the quantum dot, thereby achieving a change in the solubility of the quantum dot material.

[0080] The principle of the photobase generator generating a second ligand with an amino group after light exposure to guide the photolithographic patterning of quantum dots is shown in Figure 3. After the photobase generator (PBG) is exposed to UV light, it generates nitrogen atom amines containing lone pairs of electrons. The amines can form bonds with the surface atoms of quantum dots (QDs) and replace the original first ligand ( denoted), thus by changing the molecule of the newly coordinated amine (the second ligand, The polarity of the quantum dot material can cause the solubility of the quantum dot material to change, thereby achieving the purpose of selective patterning.

[0081] In specific implementation, in order to make the solubility of the quantum dot material in the exposed area differ greatly from that in the unexposed area, in the above-mentioned quantum dot ink provided in the embodiment of the present disclosure, the polarity of the first ligand can be weak polarity, and the polarity of the second ligand can be strong polarity; or, the polarity of the first ligand can be strong polarity, and the polarity of the second ligand can be weak polarity.

[0082] In a specific implementation, in the quantum dot ink provided in the embodiment of the present disclosure, the first ligand includes: a coordination group for coordination binding with the quantum dot, and a first polar group connected to the coordination group; the second ligand further includes a second polar group connected to the basic group; wherein,

[0083] One of the first polar group and the second polar group includes an alkyl segment or a polyether segment and a hydrocarbon group with a carbon chain length greater than 10 carbon atoms, and the other of the first polar group and the second polar group includes at least one of a sulfonic acid group, a carboxyl group, a nitroso group, a cyano group, a hydroxyl group, an amide group, a phenolic hydroxyl group, a thiol group, and an amino group, and a hydrocarbon group with a carbon chain length less than 10 carbon atoms. Thus, the molecular polarity of the first ligand should be opposite to that of the photobase generator, so that the second ligand generated by the photobase generator under light can replace the first ligand, thereby changing the solubility of the quantum dot material and achieving patterning of the quantum dot layer.

[0084] In a specific implementation, in the quantum dot ink provided in the embodiment of the present disclosure, the general structural formula of the photobase generator is: Wherein, R1 and R2 are respectively an alkyl chain, an olefin chain, a phenyl group, an ester, a carbonyl group, or an ether bond. Under ultraviolet light, -NH2 coordinates with the surface of quantum dots, replacing the original first ligand on the surface of quantum dots.

[0085] Alternatively, R1 and R2 can be benzyl methylcarbamate, methyl methylcarbamate, benzyl ethylcarbamate, methyl ethylcarbamate, or the like.

[0086] The first ligand on the surface of quantum dots in quantum dot ink is oleic acid ( The photobase generator is N-benzyloxycarbonyl-glycine ( ), the solvent is toluene, and the patterning method of the quantum dot layer is described.

[0087] First, synthesize quantum dot materials with oleic acid as the ligand (e.g., CdSe@ZnS core-shell structure quantum dots) at a concentration of 20 g / L, add N-benzyloxycarbonyl-glycine photobase generator, spin-coat the film, and irradiate with ultraviolet light for 2 minutes under a photomask at a dose of 10 J / cm 2 , the photobase generator in the exposed area generates a second ligand The solubility of the quantum dot material is changed by replacing the first ligand (oleic acid). The reaction equation for the second ligand replacing the first ligand is shown in Figure 4. Finally, the quantum dots in the non-exposed area are removed by development with toluene, and the solvent is dried to obtain a patterned quantum dot layer in the exposed area.

[0088] It should be noted that the quantum dot surfaces shown in FIG1 to FIG4 only illustrate one or several first ligands. Of course, there may be multiple first ligands on the quantum dot surface.

[0089] Based on the same inventive concept, the present disclosure also provides a method for patterning a quantum dot layer, as shown in FIG5 , comprising:

[0090] S501, forming a quantum dot film using the quantum dot ink provided by the embodiments of the present disclosure;

[0091] S502, exposing the quantum dot film to light under the cover of a mask, whereby the first ligand of the quantum dot material in the exposed area changes under the action of light and a photobase generator, and the solubility of the quantum dot material changes;

[0092] S503 , using a developer to elute and remove the quantum dots in the unexposed area to obtain a patterned quantum dot layer.

[0093] The above-mentioned quantum dot layer patterning method provided by the embodiment of the present disclosure is that the first ligand on the surface of the quantum dot changes under the action of light (such as ultraviolet light exposure) and the photobase generator to change the solubility of the quantum dot material. In this way, the solubility of the quantum dot material in the exposed area is different from that in the non-exposed area, so that a suitable developer can be selected to elute and remove the quantum dots in the non-exposed area to form a patterned quantum dot layer in the exposed area.

[0094] In a specific implementation, in the above-mentioned quantum dot layer patterning method provided in the embodiment of the present disclosure, the first ligand of the quantum dot material in the exposed area changes under the action of light and the photobase generator, which can be specifically:

[0095] The first crosslinking group of the first ligand in the exposed area and the second crosslinking group of the crosslinking agent undergo a crosslinking reaction under the action of the base generated by the photobase generator. This embodiment can be seen in the aforementioned embodiment of the quantum dot ink including quantum dot material, photobase generator, and crosslinking agent. The reaction equation corresponding to the patterning principle can be seen in Figures 1 and 2, and will not be described in detail here.

[0096] In a specific implementation, in the above-mentioned quantum dot layer patterning method provided in the embodiment of the present disclosure, the first ligand of the quantum dot material in the exposed area changes under the action of light and the photobase generator, which can be specifically:

[0097] The basic groups of the secondary ligands generated by the photobase generator in the exposed areas coordinate with the quantum dot surface, displacing the primary ligands with the secondary ligands. This embodiment can be seen in the aforementioned embodiment of quantum dot ink comprising quantum dot material and a photobase generator (generating secondary ligands upon illumination). The reaction equations corresponding to the patterning principle can be seen in Figures 3 and 4, and will not be described in detail here.

[0098] In order to achieve full-color display, the quantum dot layer generally includes patterned quantum dots of different colors, for example, the quantum dot layer includes a first quantum dot layer, a second quantum dot layer and a third quantum dot layer. When the first quantum dot ink provided by the embodiment of the present disclosure (including quantum dot material, photobase generator and crosslinker) is used, first, for example, a first quantum dot material, a second quantum dot material and a third quantum dot material whose surface ligand is oleic acid are prepared, and then the oleic acid ligand of each quantum dot material is replaced with a new first ligand (for example, ), a photobase generator and a cross-linking agent are added to each quantum dot material solution, and then the above steps S501-S503 are used to produce a patterned first quantum dot layer; then steps S501-S503 are repeated to obtain a patterned second quantum dot layer; then steps S501-S503 are repeated to obtain a patterned third quantum dot layer. When the second quantum dot ink provided in the embodiment of the present disclosure (including quantum dot materials and a photobase generator) is used, first, for example, a first quantum dot material, a second quantum dot material, and a third quantum dot material having a surface ligand of oleic acid are prepared, and a photobase generator (which can generate a second ligand upon illumination) is added to each quantum dot material solution, and then the above steps S501-S503 are used to produce a patterned first quantum dot layer; then steps S501-S503 are repeated to obtain a patterned second quantum dot layer; then steps S501-S503 are repeated to obtain a patterned third quantum dot layer.

[0099] In specific implementations, the colors of light emitted by the first quantum dot layer, the second quantum dot layer, and the third quantum dot layer in this embodiment are red, green, and blue, respectively. Thus, this embodiment achieves full-color quantum dot patterning using the above patterning method. This embodiment can pattern the quantum dot layer without inkjet printing, enabling the formation of high-resolution, high-performance quantum dots.

[0100] It should be noted that, in the process of preparing the first quantum dot layer, the second quantum dot layer and the third quantum dot layer emitting light of different colors, the photobase generator may be the same or different.

[0101] In one possible embodiment, the above-mentioned production of the first quantum dot layer, the second quantum dot layer, and the third quantum dot layer provided in the embodiments of the present disclosure can be performed by irradiating the retained areas of the first quantum dot layer, the retained areas of the second quantum dot layer, and the retained areas of the third quantum dot layer with ultraviolet light of the same wavelength. Alternatively, the retained areas of the first quantum dot layer can be irradiated with H-ray light having a wavelength of 405 nm to form a first quantum dot layer emitting red light; the retained areas of the second quantum dot layer can be irradiated with I-ray light having a wavelength of 365 nm to form a second quantum dot layer emitting green light; and the retained areas of the third quantum dot layer can be irradiated with G-ray light having a wavelength of 436 nm to form a third quantum dot layer emitting blue light.

[0102] In specific implementation, the quantum dot layer produced by the embodiment of the present disclosure can not only be used as the light-emitting layer in the QLED device, but also as the light conversion film layer in the backlight source of the liquid crystal display, the color film layer in the liquid crystal display, the color film layer in the white light OLED device + color film layer, and so on.

[0103] Based on the same inventive concept, the present disclosure also provides a quantum dot layer comprising a plurality of patterned sub-pixels, each sub-pixel comprising a quantum dot material, the quantum dot material comprising quantum dots and a cross-linked network connected to the surface of the quantum dots, the cross-linked network comprising at least one of the following structures:

[0104] In the quantum dot layer provided in the embodiments of the present disclosure, the cross-linked network on the surface of the quantum dots can be obtained by a base-catalyzed click chemistry reaction between a thiol group and a carbon-carbon double bond, a carbon triple bond, an epoxy group, or an isocyanate. Thus, the patterning of the quantum dot layer is achieved by using a thiol-containing ligand and a cross-linking agent containing a carbon-carbon double bond, a carbon triple bond, an epoxy group, or an isocyanate to undergo a cross-linking reaction under a photobase generator and light, or by using a thiol-containing cross-linking agent and a ligand containing a carbon-carbon double bond, a carbon triple bond, an epoxy group, or an isocyanate to undergo a cross-linking reaction under a photobase generator and light. The process of obtaining the quantum dot layer of this embodiment can be referred to the relevant description of the first quantum dot ink and quantum dot layer patterning method described above, and will not be described in detail here.

[0105] Optionally, in the quantum dot layer provided in the disclosed embodiment, the structure of the cross-linked network can be (See the relevant description of Figure 1), (See the relevant description of Figure 2), (crosslinked product of thiol and carbon-carbon triple bond) or (Cross-linked product of mercapto group and isocyanate).

[0106] It should be noted that the above four cross-linked networks are only some of the cross-linked network structures illustrated in the present disclosure, and are certainly not limited thereto.

[0107] Based on the same inventive concept, the embodiment of the present disclosure also provides a quantum dot layer, including a plurality of patterned sub-pixels, each sub-pixel including a quantum dot material, the quantum dot material including a quantum dot and a first ligand and a second ligand connected to the surface of the quantum dot, the polarity of the second ligand being opposite to the polarity of the first ligand, and the second ligand including a basic group containing a lone pair of electrons.

[0108] In the quantum dot layer provided in the embodiments of the present disclosure, the second ligand on the quantum dot surface can be a ligand generated by a photobase generator under illumination. The polarity of the second ligand is opposite to that of the first ligand. Thus, under illumination, the second ligand can displace the first ligand, changing the solubility of the original quantum dot material and achieving patterning of the quantum dot layer. The process of obtaining the quantum dot layer of this embodiment can be found in the description of the second quantum dot ink and quantum dot layer patterning method described above and will not be detailed here.

[0109] In a specific implementation, in the quantum dot layer provided in the embodiment of the present disclosure, the general structural formula of the second ligand may be: (See the relevant description in FIG4 ); wherein R1 is at least one of an alkyl chain, an olefin chain, a phenyl group, an ester group, a carbonyl group, and an ether bond.

[0110] In a specific implementation, in the quantum dot layer provided in the embodiment of the present disclosure, the first ligand may be oleic acid, oleylamine, or the like.

[0111] Based on the same inventive concept, the embodiments of the present disclosure further provide a quantum dot light-emitting device, comprising the above-mentioned quantum dot layer provided by the embodiments of the present disclosure.

[0112] Optionally, the quantum dot light-emitting device provided in the present disclosure may be a quantum dot light-emitting diode, a photodetector, a photovoltaic solar cell, etc., but is not limited thereto.

[0113] Optionally, the quantum dot light-emitting device provided by the present disclosure may have the structure of a conventional optoelectronic device in addition to the quantum dot layer of the present disclosure.

[0114] Alternatively, the quantum dot light-emitting device provided by the present disclosure may be a quantum dot light-emitting diode. In addition to the quantum dot layer disclosed herein, the quantum dot light-emitting diode may further include an anode, a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a cathode, an encapsulation layer, etc., but is not limited thereto.

[0115] Specifically, the specific structure, material composition and preparation method of the anode, hole injection layer, hole transport layer, electron transport layer, electron injection layer, cathode, encapsulation layer, etc. of the quantum dot light-emitting diode according to the embodiment of the present disclosure can adopt any suitable structure, material composition and preparation method without special restrictions.

[0116] Optionally, the quantum dot light-emitting diode provided in the embodiment of the present disclosure can be configured as a single-sided light-emitting quantum dot device and a double-sided light-emitting quantum dot device, or configured as a top-emitting type, a bottom-emitting type, and a double-sided light-emitting type.

[0117] Based on the same inventive concept, the embodiments of the present disclosure further provide a method for manufacturing a quantum dot light-emitting device, including forming a quantum dot layer using the above-mentioned quantum dot layer patterning method provided in the embodiments of the present disclosure.

[0118] In order to further understand the present disclosure, the method for manufacturing the quantum dot light-emitting device of the present disclosure is described in detail below with reference to the embodiments.

[0119] The quantum dot light-emitting device (e.g., quantum dot light-emitting diode) prepared in this embodiment may include: an anode, a hole injection layer, a hole transport layer, a red, green, and blue quantum dot layer, an electron transport layer, an electron injection layer, a cathode, and an encapsulation layer. The preparation method is as follows:

[0120] (1) As shown in FIG6A , an anode 2 , a hole injection layer 3 , and a hole transport layer 4 are sequentially stacked on a substrate 1 .

[0121] (2) As shown in FIG6B , the red quantum dot ink prepared above, which contains the first quantum dot material (red), a photobase generator, and a cross-linking agent, is coated on the hole transport layer 4 to form a red quantum dot film 5 ′. As shown in FIG6C , a first photo mask is applied, and the red quantum dot film 5 ′ is exposed to ultraviolet light (H line). As shown in FIG6D , the film is developed and fixed to form a first quantum dot layer 5 .

[0122] (3) As shown in FIG6E , the green quantum dot ink prepared above, which contains the second quantum dot material (green), a photobase generator, and a cross-linking agent, is coated on the first quantum dot layer 5 to form a green quantum dot film 6 ′; as shown in FIG6F , a second mask (Photo Mask) is added, and the green quantum dot film 6 ′ is exposed to ultraviolet light (I line); as shown in FIG6G , development and fixing are performed to form a second quantum dot layer 6.

[0123] (4) As shown in FIG6H , the blue quantum dot ink prepared above, which contains the third quantum dot material (blue), a photobase generator, and a cross-linking agent, is coated on the second quantum dot layer 6 to form a blue quantum dot film 7 ′; as shown in FIG6I , a third photo mask is added, and the blue quantum dot film 7 ′ is exposed to ultraviolet light (G line); as shown in FIG6J , development and fixing are performed to form a third quantum dot layer 7 .

[0124] (5) As shown in FIG6K , an electron transport layer 8 and an electron injection layer 9, such as ZnO nanoparticles, are sequentially spin-coated or evaporated on the film layer where the first quantum dot layer 5, the second quantum dot layer 6, and the third quantum dot layer 7 are located; as shown in FIG6L , a cathode metal thin layer is then evaporated to form a cathode 10. The cathode 10 may be an Al layer, etc., with a thickness of about 500-1000 nm. After the evaporation is completed, the device is packaged and cut to complete the production of a quantum dot light-emitting device with an upright structure.

[0125] It should be noted that the embodiments of the present disclosure mainly use the light-emitting device in the upright structure as an example to explain in detail the method for manufacturing the quantum dot light-emitting device. Of course, the embodiments of the present disclosure are also applicable to the manufacture of quantum dot light-emitting devices in the inverted structure. The structure of the quantum dot light-emitting device in the inverted structure is shown in Figure 7. The method for manufacturing each film layer of the inverted structure is the same as the method for manufacturing each film layer of the upright structure. The only difference is the different order of manufacturing the film layers.

[0126] Specifically, the substrate provided by the embodiment of the present disclosure may include a base substrate, a driving circuit located on the base substrate, and a passivation layer, a planarization layer, and other structures located above the driving circuit.

[0127] The light emitting device formed in the embodiment of the present disclosure can emit light from the bottom or from the top.

[0128] Based on the same inventive concept, the embodiments of the present disclosure further provide a display device, including the above-mentioned quantum dot light-emitting device provided in the embodiments of the present disclosure. The principle of solving the problem of the display device is similar to that of the aforementioned quantum dot light-emitting device. Therefore, the implementation of the display device can refer to the implementation of the aforementioned quantum dot light-emitting device, and the repeated parts will not be repeated here. The display device can be any product or component with a display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, navigator, etc. The other essential components of the display device should be understood by ordinary technicians in this field, and will not be repeated here, nor should they be used to limit the present invention.

[0129] The embodiments of the present disclosure provide a quantum dot ink, a method for patterning a quantum dot layer, and a quantum dot light-emitting device. When the quantum dot ink of the present disclosure is used to produce a patterned quantum dot layer, the first ligand on the surface of the quantum dot changes under the action of light (e.g., ultraviolet light exposure) and a photobase generator, thereby changing the solubility of the quantum dot material. In this way, the solubility of the quantum dot material in the exposed area is different from that in the non-exposed area, so that a suitable developer can be selected to elute and remove the quantum dots in the non-exposed area, forming a patterned quantum dot layer in the exposed area. Therefore, the quantum dot ink provided by the embodiments of the present disclosure can directly form a patterned quantum dot layer through a photolithography process, avoiding the technical difficulty of using a higher-precision print head to improve the resolution in the related art using an inkjet printing process. The present disclosure can effectively achieve high-resolution QLED product production.

[0130] Obviously, those skilled in the art may make various changes and modifications to the present disclosure without departing from the spirit and scope of the present disclosure. Thus, if these modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and their equivalents, the present disclosure is intended to include these modifications and variations.

Claims

1. A quantum dot ink, wherein: The invention comprises a quantum dot material and a photobase generator, wherein the quantum dot material comprises quantum dots and a first ligand connected to the surface of the quantum dots, and the quantum dot material is configured such that under the action of light and the photobase generator, the first ligand on the surface of the quantum dots changes to change the solubility of the quantum dot material.

2. The quantum dot ink according to claim 1, wherein: The quantum dot ink also includes a crosslinking agent, the first ligand includes a first crosslinking group, the crosslinking agent includes a second crosslinking group, one of the first crosslinking group and the second crosslinking group is a thiol, and the other of the first crosslinking group and the second crosslinking group is a group that can undergo a crosslinking reaction with the thiol and the photobase generator under light.

3. The quantum dot ink according to claim 2, wherein: The other of the first cross-linking group and the second cross-linking group includes at least one of a carbon-carbon double bond, a carbon-carbon triple bond, an epoxy group, and an isocyanate group.

4. The quantum dot ink according to claim 3, wherein: The cross-linking agent includes at least two of the second cross-linking groups.

5. The quantum dot ink according to claim 4, wherein: The crosslinking agent also includes a solubility regulating structure connected to the second crosslinking group.

6. The quantum dot ink according to claim 5, wherein: The solubility regulating structure includes at least one weak polar group and a hydrocarbon group having a carbon chain length greater than or equal to 10 carbon atoms, or the solubility regulating structure includes at least one strong polar group and a hydrocarbon group having a carbon chain length less than 10 carbon atoms.

7. The quantum dot ink according to claim 6, wherein: The weak polar groups include methyl, phenyl or aldehyde groups, and the strong polar groups include sulfonic acid, carboxyl, nitroso, cyano, hydroxyl, amide, phenolic hydroxyl, thiol or amino groups.

8. The quantum dot ink according to any one of claims 2 to 7, wherein: The first ligand further includes: a connecting group connected to the first cross-linking group, and a coordination group connected to the connecting group; the coordination group is configured to coordinate with the quantum dot.

9. The quantum dot ink according to claim 8, wherein: The coordination group includes at least one of -NH2, -SH, -COOH, -P, and -P=O.

10. The quantum dot ink according to claim 8, wherein: The connecting group is an alkyl segment or a polyether segment.

11. The quantum dot ink according to claim 10, wherein: The alkyl segment has at least one double bond or benzene ring group, or the alkyl segment is a straight chain alkyl containing 1C-30C; The polyether segment includes polyethylene oxide.

12. The quantum dot ink according to any one of claims 2 to 11, wherein: The photobase generator includes at least one of cobalt amine complex, quaternary ammonium salt, carbamate, oxime ester, amidine, guanidine, -amino ketone, polynitrogen heterocycle, and tetraphenylborate.

13. The quantum dot ink according to claim 1, wherein: The photobase generator is configured to generate a second ligand under light, and the polarity of the second ligand is opposite to that of the first ligand; the second ligand includes a basic group containing a lone pair of electrons, and the basic group is configured to coordinate with the surface of the quantum dot so that the second ligand replaces the first ligand.

14. The quantum dot ink according to claim 13, wherein: The basic group is an amino group.

15. The quantum dot ink according to claim 13, wherein: The polarity of the first ligand is weak polarity, and the polarity of the second ligand is strong polarity; or the polarity of the first ligand is strong polarity, and the polarity of the second ligand is weak polarity.

16. The quantum dot ink according to claim 15, wherein: The first ligand includes: a coordination group that coordinates with the quantum dot, and a first polar group connected to the coordination group; the second ligand also includes a second polar group connected to the basic group; wherein, One of the first polar group and the second polar group includes an alkyl segment or a polyether segment and a hydrocarbon group with a carbon chain length greater than 10 carbon atoms, and the other of the first polar group and the second polar group includes at least one of sulfonic acid, carboxyl, nitroso, cyano, hydroxyl, amide, phenolic hydroxyl, thiol, and amino, and a hydrocarbon group with a carbon chain length less than 10 carbon atoms.

17. The quantum dot ink according to any one of claims 13 to 16, wherein: The general structural formula of the photobase generator is: Among them, R1 and R2 are at least one of an alkyl chain, an olefin chain, a phenyl group, an ester, a carbonyl group, and an ether bond.

18. A method for patterning a quantum dot layer, wherein: include: Forming a quantum dot film using the quantum dot ink according to any one of claims 1 to 17; Under the cover of the mask, the quantum dot film is exposed to light, and the first ligand of the quantum dot material in the exposed area changes under the action of light and the photobase generator, and the solubility of the quantum dot material changes; The quantum dots in the unexposed area are removed by washing with a developer to obtain a patterned quantum dot layer.

19. The method for patterning a quantum dot layer according to claim 18, wherein: The quantum dot material in the exposed area undergoes a change in the first ligand under the action of light and the photobase generator, specifically: The first cross-linking group of the first ligand in the exposed area and the second cross-linking group of the cross-linking agent undergo a cross-linking reaction under the action of the base generated by the photobase generator.

20. The method for patterning a quantum dot layer according to claim 18, wherein: The quantum dot material in the exposed area undergoes a change in the first ligand under the action of light and the photobase generator, specifically: The basic group of the second ligand generated by the photobase generator in the exposed area is coordinated and combined with the surface of the quantum dot, so that the second ligand replaces the first ligand.

21. A quantum dot layer, wherein: The invention comprises a plurality of patterned sub-pixels, each of which comprises a quantum dot material, wherein the quantum dot material comprises a quantum dot and a cross-linked network connected to the surface of the quantum dot, wherein the cross-linked network comprises at least one of the following structures:

22. The quantum dot layer of claim 21, wherein: The structure of the cross-linked network is 23. A quantum dot layer, wherein: It includes a plurality of patterned sub-pixels, each of which includes a quantum dot material, the quantum dot material includes a quantum dot and a first ligand and a second ligand connected to the surface of the quantum dot, the polarity of the second ligand is opposite to the polarity of the first ligand, and the second ligand includes a basic group containing a lone pair of electrons.

24. The quantum dot layer of claim 23, wherein: The general structural formula of the second ligand is: Among them, R1 is at least one of an alkyl chain, an olefin chain, a phenyl group, an ester, a carbonyl group, and an ether bond.

25. A quantum dot light-emitting device, wherein: Comprising a quantum dot layer as described in any one of claims 21-24.

26. A method for manufacturing a quantum dot light-emitting device, wherein: It comprises forming a quantum dot layer by using the quantum dot layer patterning method as described in any one of claims 18 to 20.

27. A display device, wherein: Comprising the quantum dot light-emitting device as described in claim 25.

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