Processing apparatus and processing method

Abstract

This UV processing module is provided with: a processing chamber that is configured so as to be able to house a wafer to be processed; an ultraviolet lamp that irradiates ultraviolet rays into the processing chamber; a solvent supply unit that supplies a solvent into the processing chamber; and a control unit. The control unit is configured to execute: substrate processing for controlling an ultraviolet lamp so that the wafer in the processing chamber is irradiated with the ultraviolet rays; a first cleaning processing; and a second cleaning processing. In the first cleaning processing, the control unit controls the ultraviolet lamp so that the ultraviolet rays are irradiated into the processing chamber after the substrate processing. In the second cleaning processing, the control unit controls the solvent supply unit so that the inside of the processing chamber has a solvent-containing atmosphere after the first cleaning processing.

Description

Processing device and processing method

[0001] The present disclosure relates to a processing device and a processing method.

[0002] Japanese Patent Application Laid-Open No. 2003-144222 discloses a substrate processing apparatus that cleans a substrate by generating ozone by irradiating a substrate in a processing chamber with vacuum ultraviolet rays.

[0003] Patent No. 6872385

[0004] The present disclosure provides a technique for appropriately removing sublimates that accumulate during ultraviolet irradiation.

[0005] A processing apparatus according to one aspect of the present disclosure includes a processing chamber configured to accommodate a substrate to be processed, an ultraviolet irradiator that irradiates ultraviolet light into the processing chamber, a solvent supplying unit that supplies a solvent into the processing chamber, and a control unit. The control unit performs a substrate processing operation in which the ultraviolet irradiator is controlled to irradiate ultraviolet light onto the substrate in the processing chamber, and a first cleaning operation in which the ultraviolet irradiator is controlled to irradiate ultraviolet light into the processing chamber after the substrate processing. The control unit is configured to perform a second cleaning operation in which the solvent supplying unit is controlled to create a solvent-containing atmosphere inside the processing chamber after the first cleaning operation.

[0006] According to the present disclosure, a technique for appropriately removing sublimates that accumulate during ultraviolet irradiation is provided.

[0007] FIG. 1 is a process diagram showing an example of a method for forming a pattern using DSA. FIG. 2 is an exploded perspective view of a UV processing module. FIG. 3 is a longitudinal side view of the UV processing module. FIG. 4 is an exploded perspective view showing the internal structure of a driving chamber of the UV processing module. FIG. 5 is a diagram explaining a first example of a specific process. FIG. 6 is a diagram explaining a second example different from the first example. FIG. 7 is a diagram explaining a third example different from the first and second examples. FIG. 8 is a diagram explaining a fourth example different from the first to third examples. FIG. 9 is a diagram explaining a UV processing module according to a modified example. FIG. 10 is a diagram explaining a UV processing module according to another modified example.

[0008] First, a specific example of a process performed on a wafer W using a UV processing module 141 (see FIG. 2 ), which is a substrate processing apparatus (processing apparatus) according to this embodiment, will be described. The UV processing module 141 is used in a process for forming a pattern on the wafer W using directed self-assembly (DSA) of block copolymers (BCP). Specifically, as shown in FIG. 1 , the UV processing module 141 applies BCP to the surface of the wafer W to form a BCP film 93, and then performs a process (nitrogen UV (ultraviolet) process) in which the BCP film 93 is irradiated with ultraviolet light in a nitrogen atmosphere, which is an inert gas. This process is used to adjust the solubility of the phase-separated pattern in a solvent.

[0009] For example, a BCP containing a hydrophilic polymer block and a hydrophobic polymer block is used to control the position where a pattern is formed by utilizing the affinity between the hydrophilic region 911 formed in the underlying neutral film 91 and the hydrophilic polymer portion 931 after phase separation. In this example, the UV treatment module 141 forms the hydrophilic region 911 in the neutral film 91 by irradiating the neutral film 91 with ultraviolet light in the air atmosphere.

[0010] 1A shows a state in which a neutral film 91 having intermediate affinity for both hydrophilic polymer portions 931 and hydrophobic polymer portions 932 formed by phase separation of BCP is formed on the upper surface of a wafer W. Furthermore, a resist film 92 having openings formed thereon is patterned on the upper surface of the neutral film 91, the openings corresponding to the positions where hydrophilic regions 911 are to be formed. When atmospheric UV treatment is performed on this wafer W, the surface of the neutral film 91 is oxidized, forming hydrophilic regions 911. After the hydrophilic regions 911 are formed, the resist film 92 is removed, and BCP is applied to form a BCP film 93 (FIG. 1B). Subsequently, the wafer W with the BCP film 93 formed thereon is subjected to a heat treatment. This heat treatment causes phase separation between the hydrophilic polymer block and the hydrophobic polymer block, forming a lamellar structure of the hydrophilic polymer portion 931 and the hydrophobic polymer portion 932. At this time, by forming a hydrophilic region 911 at a predetermined position on the wafer W, a hydrophobic polymer portion 932 is disposed in the center of the hydrophilic region 911. Using this central hydrophobic polymer portion 932 as a base point, hydrophilic polymer portions 931 are disposed on both sides of it. Furthermore, since hydrophobic polymer portions 932 are disposed on both sides of the central hydrophobic polymer portion 931, the hydrophobic polymer portions 932 and the hydrophilic polymer portions 931 can be alternately disposed in a desired position and order ( FIG. 1C ). If a nitrogen UV treatment is further performed on the wafer W on which the hydrophilic polymer portions 931 and 932 have been formed ( FIG. 1C ), for example, the hydrophobic polymer portion 932 becomes less soluble in a solvent due to the progress of a crosslinking reaction. On the other hand, the hydrophilic polymer portion 931 becomes more soluble in a solvent due to the progress of a reaction that cleaves the main chain of the polymer. Thereafter, an organic solvent such as IPA (Isopropyl Alcohol) is supplied to the surface of the wafer W to dissolve and remove the hydrophilic polymer portions 931, thereby obtaining a pattern of linear hydrophobic polymer portions 932 arranged at predetermined intervals. By performing an etching process using these hydrophobic polymer portions 932 as a mask pattern, a pattern structure corresponding to the mask pattern can be formed on the wafer W.

[0011] The configuration of the UV treatment module 141 will be described with reference to Figures 2 to 4. Note that Figures 2 to 4 only show the basic configuration of the UV treatment module 141, and some components (such as the solvent supply unit 90 shown in Figure 5) are omitted. In the following description, the "up-down direction," "front-rear direction," and "width direction" may be used as three mutually intersecting directions. The "up-down direction" is a direction intersecting a horizontal plane, the "front-rear direction" is the direction in which the wafer W moves within the treatment chamber 20 of the UV treatment module 141 (described later), and the "width direction" is a direction intersecting the "up-down direction" and the "front-rear direction."

[0012] 2 to 4, the UV processing module 141 is configured by dividing the interior of a flat housing 21 that is elongated in the front-to-rear direction into upper and lower sections by a partition member 23. In the UV processing module 141, a transfer chamber 19 for the wafer W and a processing chamber 20 are provided above the partition member 23, and a drive chamber 22 (see FIG. 4) that houses a drive mechanism 50 for the vacuum chuck 5 (mounting table) is provided below the partition member 23. The processing chamber 20 is a space configured to be able to accommodate a wafer W to be processed.

[0013] A loading / unloading port 211 is formed in the front side wall of the housing 21, through which the wafer W is loaded and unloaded into the space above the partition member 23. The loading / unloading port 211 can be freely opened and closed by a shutter 212. A transfer chamber 19, which is a space where the wafer W is transferred between an external wafer transfer mechanism and the vacuum chuck 5, is provided in a front area of ​​the housing 21 facing the loading / unloading port 211. The transfer chamber 19 is provided adjacent to the processing chamber 20 on the upstream side of the processing chamber 20. The vacuum chuck 5 is a disk-shaped member (mounting table) on which the wafer W is placed at least within the processing chamber 20. An adsorption port connected to a vacuum exhaust path (not shown) is opened in the upper surface of the vacuum chuck 5, and can adsorb and hold the wafer W.

[0014] The vacuum chuck 5 is connected to a drive mechanism 50 via a support 51. A linear slit 234 is formed in the partition member 23, forming a movement path for moving the support 51. Therefore, the vacuum chuck 5 can move back and forth along the slit 234 between the transfer chamber 19 for the wafer W and the processing chamber 20.

[0015] The partition member 23, located between the transfer opening 211 and the vacuum chuck 5 that has moved toward the transfer chamber 19, is provided with a front opening 231 for sucking the air (or nitrogen) that has entered through the transfer opening 211 downward into the driving chamber 22. The front opening 231 is formed in a shape that is elongated in the left-right direction along the transfer opening 211. Furthermore, the partition member 23, located on both sides of the slit 234 as viewed from the front side, is formed with transfer chamber side openings 233a and 233b for sucking the air (or nitrogen) in the transfer chamber 19 for the wafer W downward into the driving chamber 22. The transfer chamber side openings 233a and 233b are formed in a shape that is elongated in the front-rear direction along the extension direction of the slit 234.

[0016] A cover 55 is provided above the transfer chamber side openings 233a, 233b to cover the transfer chamber side openings 233a, 233b in order to prevent particles generated in the driving chamber 22 from adhering to the wafer W placed on the vacuum chuck 5. The cover 55 is provided at a height position between the transfer chamber side openings 233a, 233b and the surface on the vacuum chuck 5 on which the wafer W is placed. Air (or nitrogen) in the transfer space for the wafer W enters the transfer chamber side openings 233a, 233b through a gap between the cover 55 and the partition member 23. The cover 55 also has a slit 551 formed therein to allow passage of the support portion 51 supporting the vacuum chuck 5.

[0017] A lamp box 72 and a processing chamber cover 74 are provided behind the transfer chamber 19 for the wafer W so as to cover the upper side of the partition member 23. The wafer W placed on the vacuum chuck 5 is transferred into the processing chamber 20 surrounded by the partition member 23, the lamp box 72, and the processing chamber cover 74.

[0018] The lamp box 72 is provided with a low-pressure ultraviolet lamp (low-pressure mercury lamp) that emits ultraviolet light having strong peaks at wavelengths of 185 nm and 254 nm. Alternatively, the lamp box 72 is provided with an ultraviolet lamp 7 (ultraviolet light irradiation unit) such as a Xe excimer lamp that emits single-wavelength ultraviolet light at a wavelength of 172 nm or a KrCl excimer lamp that emits single-wavelength ultraviolet light at a wavelength of 222 nm. The ultraviolet lamp 7 irradiates ultraviolet light into the processing chamber 20. The ultraviolet lamp 7 is configured to irradiate ultraviolet light onto a linear region that is longer than the diameter (e.g., 300 mm) of the wafer W, and is positioned so that the linear irradiation region is formed in a direction perpendicular to the movement direction of the wafer W (the direction in which the slit 234 extends).

[0019] Quartz glass 71 that transmits ultraviolet light is arranged on the underside of the lamp box 72, and ultraviolet light generated by supplying power to the ultraviolet lamp 7 from a power supply unit (not shown) is irradiated downward through this quartz glass 71. When the wafer W passes below this ultraviolet lamp 7, UV processing is performed in which the wafer W is irradiated with ultraviolet light.

[0020] The processing chamber cover 74 covers the upper side of the partition member 23 in an area rearward of the position where the lamp box 72 is disposed, and together with the lamp box 72, forms the processing chamber 20 between the partition member 23 and the processing chamber cover 74. A canopy portion 73 is provided in front of the lamp box 72.

[0021] As shown in FIG. 4 , a slider 52 is provided at the lower end of a support portion 51 that supports the vacuum chuck 5. The slider 52 is guided by a rail 53 arranged on the floor of the drive chamber 22 along the direction in which the slit 234 described above extends, and is configured to be movable back and forth within the drive chamber 22. The slider 52 is connected to a drive belt 541, which is wound around a rotary shaft of a rotary motor 543 and a pulley 542, both of which are arranged at the front and rear ends of the rail 53. The vacuum chuck 5 can be moved to a desired position by rotating the rotary motor 543 forward or backward a predetermined amount to move the drive belt 541 back and forth. The slider 52, rail 53, drive belt 541, rotary motor 543, and pulley 542 correspond to a drive mechanism 50 for the vacuum chuck 5. For ease of explanation, FIG. 4 shows the drive belt 541 with a portion cut away.

[0022] Exhaust pipes 221a, 221b are provided in the drive chamber 22, extending in the front-rear direction along the left and right inner wall surfaces (both widthwise ends) when viewed from the front. A plurality of exhaust holes 222 are formed at intervals on the side surface of each exhaust pipe 221a, 221b, and the atmosphere in the drive chamber 22 is exhausted to the exhaust pipes 221a, 221b through these exhaust holes 222. Each exhaust pipe 221a, 221b is connected to a lower exhaust chamber 25 provided at the rear of the drive chamber 22. The airflow flowing through the exhaust pipes 221a, 221b passes through this lower exhaust chamber 25 and is discharged to the outside through a lower exhaust line 251 connected to the lower exhaust chamber 25.

[0023] Within the processing chamber 20, slit-side ducts 3a, 3b each having an exhaust port 31 formed along the length of the slit 234 are provided on the partition member 23 on both left and right sides of a slit 234 that forms a movement path for a support part 51 that supports the vacuum chuck 5. The exhaust ports 31 formed in the slit-side ducts 3a, 3b are provided on surfaces facing each other on both left and right sides of the slit 234. The rear ends of the slit-side ducts 3a, 3b are connected to an upper-side exhaust chamber 24 provided at the rear of the processing chamber 20. The airflow flowing through the slit-side ducts 3a, 3b passes through the upper-side exhaust chamber 24 and is exhausted to the outside from an upper-side exhaust line 241 connected to the upper-side exhaust chamber 24.

[0024] On the left side of the slit-side duct 3a and on the right side of the slit-side duct 3b, as viewed from the front side, rectangular processing chamber-side openings 232a, 232b communicating with the driving chamber 22 are formed in the partition member 23 at a position on the front side of the processing chamber 20 facing the transfer chamber 19 for the wafer W. The upper sides of these processing chamber-side openings 232a, 232b are covered by guide plates 41a, 41b that are inclined so that their heights gradually increase from the rear end connected to the partition member 23 toward the front end. The gaps between the guide plates 41a, 41b and the partition member 23 open at positions facing the transfer chamber 19 for the wafer W from the processing chamber 20 side, and a portion of the air (or nitrogen) flowing into the processing chamber 20 flows toward the driving chamber 22. Furthermore, exhaust ducts 42a, 42b are formed on the partition member 23 on the rear side of the processing chamber side openings 232a, 232b, extending in the front-to-rear direction along the slit 234 and the slit side ducts 3a, 3b. The tips of these exhaust ducts 42a, 42b form exhaust ports that open toward the area in the processing chamber 20 where ultraviolet light is irradiated from the ultraviolet lamps 7, while their rear ends open toward the above-mentioned upper exhaust chamber 24. Alternatively, openings may be provided in the partition member 23 on the rear end sides of the exhaust ducts 42a, 42b to exhaust the insides of the exhaust ducts 42a, 42b toward the driving chamber 22.

[0025] In addition, a rear end exhaust section 6 is provided on the side wall surface at the rear end of the processing chamber 20. The rear end exhaust section 6 has a slit-shaped exhaust port 61 extending in the left-right direction when viewed from the front. The exhaust port 61 is also connected to the upper exhaust chamber 24. In this manner, in this example, the rear end of the processing chamber 20 and the rear ends of the exhaust ducts 42a, 42b are each configured to open toward the upper exhaust chamber 24, but either the processing chamber 20 or the exhaust ducts 42a, 42b may open toward the upper exhaust chamber 24.

[0026] Plate-shaped buffer space forming members 223a, 223b are arranged below the partition member 23 on the processing chamber 20 side, with a gap between them and the underside of the partition member 23. The inside of the driving chamber 22 is a space in which the support part 51 of the vacuum chuck 5 and the slider 52 move back and forth, and the atmosphere inside the driving chamber 22 is disturbed by these movements. As a result, there is a risk that particles generated inside the driving chamber 22 will fly up and flow into the processing chamber 20 via the slit 234 or the like. In view of this, the buffer space forming members 223a, 223b are arranged below the partition member 23, and a gap is formed between the partition member 23 and the buffer space forming members 223a, 223b, and this gap serves as the buffer space 224. The front ends of the buffer space forming members 223a, 223b are located below the centers in the front-to-rear direction of the processing chamber side openings 232a, 232b described above, and their rear ends are connected to the side wall surfaces on the rear end side of the drive chamber 22. When viewed from the front side, the left side end of the buffer space forming member 223a and the right side end of the buffer space forming member 223b are each connected to the side wall surfaces of the drive chamber 22. On the other hand, the right side end of the buffer space forming member 223a and the left side end of the buffer space forming member 223b extend to the lower side of the partition member 23 that forms the slit 234, and form a slit 225 that has approximately the same width as the slit 234.

[0027] The UV processing module 141 further includes a control unit 8 (FIG. 3). The control unit 8 is composed of a computer including a CPU and a storage unit (not shown). The storage unit stores a program including a set of control steps for carrying the wafer W into the processing chamber 20, irradiating it with ultraviolet light from the ultraviolet lamps 7 to perform UV processing, and then moving the wafer W back to the transfer position and carrying it out. This program is stored in a storage medium such as a hard disk, compact disk, magnetic optical disk, or memory card, and is installed in the computer from there.

[0028] Next, a description will be given of the basic operation of the UV processing module 141. When a wafer W to be processed is transferred by an external wafer transfer mechanism, the shutter 212 is opened and the wafer W is transferred through the transfer port 211 and placed on the vacuum chuck 5 waiting in the transfer chamber 19. Once the wafer W is attracted and held on the vacuum chuck 5, power is supplied to the ultraviolet lamp 7 to start irradiating it with ultraviolet light, and the wafer W is moved toward the processing chamber 20.

[0029] When the wafer W enters the processing chamber 20 and passes below the ultraviolet lamps 7, ultraviolet rays are irradiated onto the upper surface of the wafer W. By moving the wafer W below the ultraviolet lamps 7 at a preset speed in this manner, the entire surface of the wafer W is scanned with ultraviolet rays, thereby performing the UV processing described in FIG. 1( a). During the UV processing, the inside of the module is deoxygenated with nitrogen to suppress attenuation of the UV light.

[0030] After the entire surface of the wafer W has been irradiated with ultraviolet light, the ultraviolet lamp 7 is turned off and the wafer W is moved to the transfer chamber 19. Thereafter, the shutter 212 is opened to allow the wafer transfer mechanism to enter, the vacuum chuck 5 is released from suction, the wafer W is transferred to the wafer transfer mechanism, and the processed wafer W is then removed.

[0031] Here, irradiation of the wafer W with ultraviolet rays by the UV processing module 141 described above may cause a problem of generating sublimates of the neutral film on the wafer W. A technology for appropriately removing such sublimates will be described in detail below. That is, the control unit 8 is configured to perform a substrate processing operation in which the ultraviolet lamps 7 are controlled so that ultraviolet rays are irradiated onto the wafer W in the processing chamber 20, as well as a first cleaning process and a second cleaning process, which are processes for removing the sublimates. The processing method executed by the control unit 8 includes a substrate processing step related to the substrate processing operation, a first cleaning step related to the first cleaning process, and a second cleaning step related to the second cleaning process.

[0032] In the first cleaning process, after the substrate processing, the control unit 8 controls the ultraviolet lamps 7 so that ultraviolet light is irradiated into the processing chamber 20 while the wafer W is retracted. UV irradiation in an oxygen-containing ambient gas generates ozone and active oxygen, which combine with organic compounds contaminants and promote their decomposition. This allows sublimates generated from the materials to be appropriately removed (cleaned).

[0033] In the second cleaning process, the control unit 8 controls a solvent supply unit 90 (see FIG. 5 , etc.) described later so that the inside of the processing chamber 20 is filled with a solvent-containing atmosphere after the first cleaning process. The solvent supply unit 90 is configured to supply a solvent such as a solvent into the processing chamber 20. In this way, by performing the solvent atmosphere process in addition to the first cleaning process described above, the sublimates can be more appropriately removed (cleaned).

[0034] Next, specific examples of the first cleaning process and the second cleaning process will be described with reference to Figures 5 to 8. Figures 5 to 8 show only the configurations related to the first cleaning process and the second cleaning process, and other configurations are omitted.

[0035] First, we will explain the components related to the first and second cleaning processes that have not been described above (or have not been described in detail) in the UV treatment module 141. The UV treatment module 141 includes a lamp box 72, an ultraviolet lamp 7, a solvent supply unit 90, and a treatment chamber cover 74.

[0036] The ultraviolet lamp 7 in the lamp box 72 irradiates ultraviolet light into the processing chamber 20 under the control of the control unit 8. The lamp box 72 also includes a gas supply unit capable of outputting nitrogen or air under the control of the control unit 8. That is, the lamp box 72 is connected to a nitrogen supply source and an air supply source and is configured to selectively output nitrogen or air through holes formed therein. The lamp box 72 may also be configured with slits on both sides of the ultraviolet lamp 7 through which gas can flow in. Air can also be supplied through the slits. The solvent supply unit 90 discharges a solvent under the control of the control unit 8. The solvent supply unit 90 is provided, for example, on the processing chamber cover 74 and discharges the solvent from above into the processing chamber 20. The solvent is discharged, for example, after the processing atmosphere reaches 40°C or higher. The solvent may be generated using bubbling or a vaporizer. The solvent supply unit 90 is provided in the processing chamber 20 so as to enable uniform discharge of the solvent. The solvent supply unit 90 may have only its nozzle tip extending into the processing chamber 20. The solvent supply unit 90 may be provided with a supply space for diffusion, into which the solvent is bubbled and then discharged through holes or slits so as to be uniformly discharged. The solvent supply unit 90 may have, for example, multiple nozzles, each of which may discharge the solvent uniformly in a radial pattern. The processing chamber cover 74 defines the upper end (ceiling surface) of the processing chamber 20 and is a top plate having a heating unit 74x. The heating unit 74x is configured to be heated under the control of the control unit 8. The heating unit 74x is heated to, for example, 40°C or higher to prevent condensation and promote drying. That is, the control unit 8 heats the processing chamber cover 74 by controlling the heating unit 74x.

[0037] FIG. 5 illustrates a first example of the first and second cleaning processes. First, substrate processing is performed as shown in FIG. 5( a). During substrate processing, a wafer W to be processed is set in the processing chamber 20. Nitrogen is discharged from the lamp box 72, and UV light is irradiated onto the wafer W from the ultraviolet lamps 7. The controller 8 controls the lamp box 72 to supply nitrogen during substrate processing. During substrate processing, the controller 8 controls the nitrogen to be exhausted from both the upper exhaust line 241 and the lower exhaust line 251. This exhaust exhausts sublimates generated during substrate processing. Note that in the state shown in FIG. 5( a), the shutter 212 may be open and the wafer W may be UV-processed. In this case, only the area around the wafer W may be in a nitrogen atmosphere, which may then be replaced with an air atmosphere after the substrate processing. Alternatively, after the substrate processing, outside air (air atmosphere) may be introduced from the shutter 212 or the gas supply unit to replace the air atmosphere.

[0038] 5B, after the substrate processing, a first cleaning process (dry cleaning) is performed in which UV light is irradiated into the processing chamber 20 while the wafer W is evacuated from the processing chamber 20. The control unit 8 controls the upper exhaust line 241 and the lower exhaust line 251 so as not to exhaust air from the processing chamber 20 during the first cleaning process. The upper exhaust line 241 and the lower exhaust line 251 are provided downstream within the processing chamber 20 and function as exhaust units that exhaust air from the processing chamber 20. The control unit 8 controls the shutter 212 so as not to supply air into the processing chamber 20 during the first cleaning process. That is, the control unit 8 closes the shutter 212 at the loading / unloading port 211. The shutter 212 is provided upstream within the processing chamber 20, i.e., on the loading / unloading port side for the wafer W, and functions as a gas supply unit that supplies air (atmospheric air) into the processing chamber 20. The control unit 8 controls the supply of air into the processing chamber 20 by controlling the opening and closing of the shutter 212. As described above, in the first cleaning process, UV irradiation is performed from the ultraviolet lamps 7 without nitrogen being discharged from the ultraviolet lamps 7, and the control unit 8 controls so that exhaust from the upper exhaust line 241 and the lower exhaust line 251 is not performed. Note that, for example, the control unit 8 may control so that exhaust is performed from the upper exhaust line 241. Furthermore, in the first cleaning process, the control unit 8 controls so that the heating unit 74x of the processing chamber cover 74 is heated. Note that the control unit 8 may control the heating unit 74x so that the inside of the processing chamber 20 is maintained at a predetermined temperature or higher by heating from the heating unit 74x from the start of the first cleaning process to the end of the second cleaning process. This makes it possible to suppress re-adhesion of sublimates after cleaning.

[0039] Next, as shown in FIG. 5C , a dry cleaning replacement process is performed after the first cleaning process. The control unit 8 controls the shutter 212, which is a gas supply unit, to supply air into the processing chamber 20 after the first cleaning process and before the second cleaning process described later. Specifically, the control unit 8 opens the shutter 212 (opens the shutter 212, allowing outside air to be introduced into the processing chamber). Therefore, the processing chamber 20 is kept at atmospheric pressure after the first cleaning process and before the second cleaning process described later. The control unit 8 also controls the upper exhaust line 241 to exhaust air from the processing chamber 20 after the first cleaning process and before the second cleaning process described later. The control unit 8 may also control the exhaust line 241 so that air is exhausted from the lower exhaust line 251 in addition to the upper exhaust line 241, or may control the exhaust line 251 so that air is exhausted instead of the upper exhaust line 241. The dry cleaning replacement process exhausts sublimates generated by UV irradiation in the first cleaning process to the outside, thereby preventing reattachment of the sublimates.

[0040] 5(d) and 5(e), a second cleaning process is performed after the dry cleaning replacement process. The second cleaning process includes a pre-wet cleaning (third cleaning) process (FIG. 5(d)) and a wet cleaning (fourth cleaning) process (FIG. 5(e)). In the second cleaning process, the control unit 8 controls the solvent supply unit 90 so that the inside of the processing chamber 20 is filled with a solvent-containing atmosphere.

[0041] 5(d), during the pre-wet cleaning process, which is the start of the second cleaning process, the controller 8 controls the heater 74x of the processing chamber cover 74 so that the temperature inside the processing chamber 20 is raised to a predetermined temperature or higher by heating with the heater 74x. During the pre-wet cleaning process, the controller 8 controls the upper exhaust line 241 so that air is exhausted from the processing chamber 20. The controller 8 may control the lower exhaust line 251 in addition to the upper exhaust line 241, or may control the lower exhaust line 251 instead of the upper exhaust line 241. Furthermore, the controller 8 may control the shutter 212 (i.e., open the shutter 212) so that air is supplied into the processing chamber 20 during the pre-wet cleaning process. In this case, sublimates initially removed by the solvent can be removed, and the solvent atmosphere can be efficiently transported to the depths of the processing module by the atmosphere.

[0042] 5( e), during the wet cleaning process after the pre-wet cleaning process, the control unit 8 controls the upper exhaust line 241 and the lower exhaust line 251 so as not to exhaust air from the processing chamber 20. Furthermore, the control unit 8 may control the shutter 212 (i.e., close the shutter 212) so as not to supply air into the processing chamber 20 during the wet cleaning process.

[0043] Next, as shown in FIG. 5( f ), a wet cleaning drying process is performed after the wet cleaning process. After the wet cleaning process, the control unit 8 controls the shutter 212, which is a gas supply unit, to supply air into the processing chamber 20 (i.e., opens the shutter 212). The control unit 8 also controls the upper exhaust line 241 to exhaust air from the processing chamber 20. The control unit 8 may also control the lower exhaust line 251 to exhaust air in addition to the upper exhaust line 241, or may control the lower exhaust line 251 to exhaust air instead of the upper exhaust line 241. In each of the states shown in FIGS. 5( c ), 5 ( d ), and 5 ( f ), the upper part of the shutter 212 is slightly opened to exhaust air via upper exhaust, thereby strengthening the airflow in the upper portion where sublimates are most likely to accumulate, thereby enabling efficient exhaust of the sublimates. In each of the states shown in FIGS. 5( d ) and 5 ( f ), the sublimates in the lower exhaust line 251 may be washed with a solvent.

[0044] 6A and 6B are diagrams illustrating a second example of the first cleaning process and the second cleaning process. First, substrate processing is performed as shown in FIG. 6A. The substrate processing is similar to the first example described above. Next, as shown in FIG. 6B, after the substrate processing, a first cleaning process (dry cleaning) is performed in which UV is irradiated into the processing chamber 20 while the wafer W is retracted from the processing chamber 20. The first cleaning process is similar to the first example described above.

[0045] 6(c), after the first cleaning process, a dry cleaning replacement process is performed. After the first cleaning process and before the second cleaning process, the control unit 8 controls the lamp box 72 so that air is supplied into the processing chamber 20. Specifically, the control unit 8 controls the lamp box 72 so that air is discharged from the lamp box 72. Furthermore, after the first cleaning process and before the second cleaning process described below, the control unit 8 controls the upper exhaust line 241 so that air is exhausted from the processing chamber 20.

[0046] 6(d) and 6(e), the second cleaning process is performed after the dry cleaning replacement process, which is the same as the first example described above.

[0047] 6(f), after the wet cleaning process, a wet cleaning drying process is performed. After the wet cleaning process, the control unit 8 controls the lamp box 72, which is a gas supply unit, so that air is supplied into the processing chamber 20 (i.e., so that air is discharged from the ultraviolet lamp 7). The control unit 8 also controls the upper exhaust line 241 so that air is exhausted from the processing chamber 20.

[0048] As described above, the second examples of the first cleaning process and the second cleaning process differ from the first example described above in that air is supplied into the processing chamber 20 by controlling the lamp box 72, which functions as a gas supply unit. In the processing of the second example, the processing can be performed with the shutter 212 completely closed (without introducing outside air).

[0049] 7A and 7B are diagrams illustrating a third example of the first and second cleaning processes. First, substrate processing is performed as shown in FIG. 7A. The substrate processing is similar to the first and second examples described above. Next, as shown in FIG. 7B, after the substrate processing, a first cleaning process (dry cleaning) is performed in which UV light is irradiated into the processing chamber 20 while the wafer W is retracted from the processing chamber 20. The first cleaning process is similar to the first and second examples described above.

[0050] 7C, after the first cleaning process, a dry cleaning replacement process is performed. The controller 8 controls the supply of air into the processing chamber 20 after the first cleaning process and before the subsequent second cleaning process. Specifically, the controller 8 controls the discharge of air from the lamp box 72. The controller 8 also controls the upper exhaust line 241 to exhaust air from the processing chamber 20 after the first cleaning process and before the second cleaning process (described later). Furthermore, the controller 8 may control the drive mechanism 50 to reciprocate the vacuum chuck 5 between the upstream and downstream sides of the processing chamber 20 after the first cleaning process and before the second cleaning process. In this case, the controller 8 may control the drive mechanism 50 so that the speed at which the vacuum chuck 5 moves from the upstream side (the side of the wafer W loading / unloading port) to the downstream side is faster than the speed at which the vacuum chuck 5 moves from the downstream side to the upstream side. The control unit 8 may also control the drive mechanism 50 so that the moving speed of the vacuum chuck 5 gradually increases as the vacuum chuck 5 moves from the upstream side to the downstream side. The control unit 8 may also control the drive mechanism 50 so that the moving speed of the vacuum chuck 5 gradually decreases as the vacuum chuck 5 moves from the downstream side to the upstream side. By controlling the movement of the vacuum chuck 5 in this way, an airflow from the upstream side to the downstream side (exhaust side) can be appropriately formed, and the exhaust efficiency (i.e., cleaning efficiency) can be improved.

[0051] 7(d) and 7(e), the second cleaning process is performed after the dry cleaning replacement process, which is the same as the first and second examples described above.

[0052] 7(f), a wet cleaning drying process is performed after the wet cleaning process. After the wet cleaning process, the controller 8 controls the supply of air into the processing chamber 20 (i.e., the discharge of air from the lamp box 72). The controller 8 also controls the upper exhaust line 241 to exhaust the air from the processing chamber 20. The controller 8 may also control the drive mechanism 50 to reciprocate the vacuum chuck 5 between the upstream and downstream sides of the processing chamber 20. In this case, the controller 8 may control the drive mechanism 50 so that the speed at which the vacuum chuck 5 moves from the upstream side (the side of the wafer W loading / unloading port) to the downstream side is faster than the speed at which the vacuum chuck 5 moves from the downstream side to the upstream side. The controller 8 may also control the drive mechanism 50 so that the speed at which the vacuum chuck 5 moves from the upstream side to the downstream side gradually accelerates as the vacuum chuck 5 moves from the upstream side to the downstream side. Furthermore, the control unit 8 may control the drive mechanism 50 so that the moving speed of the vacuum chuck 5 gradually decreases as the vacuum chuck 5 moves from the downstream side to the upstream side. By controlling the movement of the vacuum chuck 5 in this way, an airflow from the upstream side to the downstream side (exhaust side) can be appropriately formed, and the exhaust efficiency (i.e., cleaning efficiency) can be improved.

[0053] 8 is a diagram illustrating a fourth example of the first cleaning process and the second cleaning process. The processes in the fourth example are basically the same as those in the second example (see FIGS. 6(a) to 6(f)). In the fourth example, in addition to the processes in the second example, a process for reducing the volume of the processing chamber 20 is performed. The processing chamber 20 is configured to have a variable volume.

[0054] Specifically, the processing chamber 20 is configured so that its lower surface portion can be raised to reduce its volume compared to normal. The control unit 8 raises the lower surface portion of the processing chamber 20 to reduce the volume of the processing chamber 20 compared to normal. Specifically, the control unit 8 reduces the volume of the processing chamber 20 at least during the first cleaning process and the second cleaning process. As shown in FIGS. 8( b) to 8( f), in this example, the control unit 8 continuously raises the lower surface portion of the processing chamber 20 to reduce the volume of the processing chamber 20 from the first cleaning process (see FIG. 8( b)) until the wet cleaning drying process (see FIG. 8( f)) is completed. By reducing the volume of the processing chamber 20 in this manner, the efficiency of sublimate removal can be improved and drying can be accelerated.

[0055] Next, the effects of the above-described UV processing module 141 will be described.

[0056] The UV processing module 141 includes a processing chamber 20 configured to accommodate a wafer W to be processed, an ultraviolet lamp 7 that irradiates ultraviolet rays into the processing chamber 20, a solvent supply unit 90 that supplies a solvent into the processing chamber 20, and a control unit 8. The control unit 8 is configured to perform a substrate processing operation in which the ultraviolet lamp 7 is controlled so that ultraviolet rays are irradiated onto the wafer W in the processing chamber 20, a first cleaning operation, and a second cleaning operation. In the first cleaning operation, the control unit 8 controls the ultraviolet lamp 7 so that ultraviolet rays are irradiated into the processing chamber 20 after the substrate processing. In the second cleaning operation, the control unit 8 controls the solvent supply unit 90 so that a solvent-containing atmosphere is created inside the processing chamber 20 after the first cleaning operation.

[0057] By performing this first cleaning process, UV irradiation in an oxygen-containing atmosphere generates ozone and active oxygen. These ozone and active oxygen combine with organic compounds, which are contaminants, and promote their decomposition. This allows for proper removal (cleaning) of sublimates generated from the material. Furthermore, by performing a second cleaning process after the first cleaning process to create a solvent-containing atmosphere, sublimates can be more properly removed. As described above, the UV processing module 141 according to this embodiment allows for proper removal of sublimates that accumulate during UV irradiation.

[0058] The processing chamber 20 has a processing chamber cover 74 that defines the upper end of the processing chamber 20 and has a heating unit 74x. The control unit 8 heats the processing chamber cover 74 by controlling the heating unit 74x. With this configuration, the heating unit 74x maintains a high temperature inside the processing chamber 20, allowing sublimates to be more appropriately removed. In addition, condensation inside the processing chamber 20 during and after the wet cleaning process can be suppressed.

[0059] At the start of the second cleaning process, the control unit 8 may control the heating unit 74x so that the temperature inside the processing chamber 20 becomes equal to or higher than a predetermined temperature by heating the processing chamber cover 74. With this configuration, the temperature inside the processing chamber 20 can be maintained high during the second cleaning process in which the processing chamber 20 is filled with a solvent-containing atmosphere, and sublimates can be more appropriately removed.

[0060] The UV treatment module 141 may further include a gas supply unit provided upstream within the treatment chamber 20 to supply air into the treatment chamber 20, and an exhaust unit provided downstream within the treatment chamber 20 to exhaust air from the treatment chamber 20. The gas supply unit may be, for example, a shutter 212 for introducing atmospheric air. The exhaust unit may be, for example, an upper exhaust line 241 and a lower exhaust line 251. With this configuration, an airflow can be appropriately formed within the treatment chamber 20 from the upstream side toward the downstream exhaust unit, thereby improving exhaust efficiency (i.e., cleaning efficiency).

[0061] The control unit 8 may control the exhaust unit so that air is not exhausted from the processing chamber 20 during the first cleaning process, and may control the exhaust unit so that air is exhausted from the processing chamber 20 during pre-wet cleaning, which is the start of the second cleaning process. With this configuration, dry cleaning in the first cleaning process can be performed appropriately, and exhaust can be performed appropriately during the pre-wet cleaning process, allowing sublimates to be properly removed.

[0062] The control unit 8 may control the gas supply unit so that air is not supplied into the processing chamber 20 during the first cleaning process. The control unit 8 may control the gas supply unit so that air is supplied into the processing chamber 20 after the first cleaning process and before the second cleaning process, and may also control the exhaust unit so that air is exhausted from the processing chamber 20. The control unit 8 may control the gas supply unit so that air is supplied into the processing chamber 20 after the second cleaning process, and may also control the exhaust unit so that air is exhausted from the processing chamber 20. With this configuration, dry cleaning in the first cleaning process can be performed appropriately, and exhaust can be performed appropriately during the pre-wet cleaning process, allowing sublimates to be properly removed.

[0063] During wet cleaning after pre-wet cleaning in the second cleaning process, the control unit 8 may control the exhaust unit so that air is not exhausted from the processing chamber 20, and may also control the gas supply unit so that air is not supplied into the processing chamber 20. With this configuration, wet cleaning can be appropriately performed in the processing chamber 20 with exhaust turned off.

[0064] During the first cleaning process, the atmosphere may be the air inside the process chamber 20. With this configuration, dry cleaning substitution can be performed appropriately and redeposition of sublimates can be appropriately suppressed.

[0065] The gas supply unit has a shutter 212 that is configured to be openable and closable on the wafer W loading side of the processing chamber 20, and the control unit 8 may control the supply of air by the gas supply unit into the processing chamber 20 by controlling the opening and closing of the shutter 212. Such a configuration for controlling the shutter 212 makes it possible to easily and reliably supply air into the processing chamber 20.

[0066] The gas supply unit may be configured to supply nitrogen instead of air, and the control unit 8 may control the supply of nitrogen during substrate processing. By configuring the gas supply unit to supply nitrogen during substrate processing in this manner, substrate processing can be performed appropriately.

[0067] The control unit 8 may control the heating unit 74x so that the temperature inside the processing chamber 20 is maintained at a predetermined temperature or higher by the heating of the heating unit 74x from the start of the first cleaning process to the end of the second cleaning process. This configuration allows sublimates to be more appropriately removed in the first cleaning process and the second cleaning process. Also, condensation inside the processing chamber 20 during and after the wet cleaning process can be suppressed.

[0068] The UV processing module 141 may further include a vacuum chuck 5 configured to be able to mount a wafer W within the processing chamber 20, and a drive mechanism 50 for moving the vacuum chuck 5. The control unit 8 may control the drive mechanism 50 to move the vacuum chuck 5 between the upstream and downstream sides within the processing chamber 20 after the first cleaning process and before the second cleaning process. With this configuration, controlling the movement of the vacuum chuck 5 can appropriately form an airflow from the upstream side to the downstream side (exhaust side), thereby improving exhaust efficiency (i.e., cleaning efficiency). To further improve the replacement efficiency, a jig that does not interfere with the processing chamber may be mounted on the vacuum chuck 5 instead of the wafer W, and the drive mechanism 50 may be controlled to move the vacuum chuck 5 between the upstream and downstream sides within the processing chamber 20.

[0069] The control unit 8 may control the drive mechanism 50 so that the speed at which the vacuum chuck 5 moves from the upstream side to the downstream side is faster than the speed at which the vacuum chuck 5 moves from the downstream side to the upstream side. With this configuration, an airflow from the upstream side to the downstream side (exhaust side) can be more appropriately formed, and the exhaust efficiency (i.e., cleaning efficiency) can be improved.

[0070] The processing chamber 20 is configured to have a variable volume, and the control unit 8 may reduce the volume of the processing chamber 20 during the first cleaning process and the second cleaning process. By reducing the volume of the processing chamber 20 in this manner, the efficiency of removing sublimates during the first cleaning process and the second cleaning process can be improved, and drying can be promoted.

[0071] Although the processing apparatus and processing method according to the present embodiment have been described above, the processing apparatus and processing method according to the present disclosure are not limited to the above.

[0072] FIG. 9 is a diagram illustrating a modified UV treatment module. As shown in FIG. 9 , the UV treatment module may include a first shutter 501 and a second shutter 502. The first shutter 501 is, for example, a shutter provided at the loading / unloading port 211. The second shutter 502 is, for example, a shutter provided between the transfer chamber 19 and the processing chamber 20 to separate the two chambers. The transfer chamber 19 can be considered to be the space between the first shutter 501 and the second shutter 502. The control unit 8 may adjust the amount of air exhausted by the exhaust unit depending on the opening degree of the first shutter 501 and the second shutter 502. This double shutter structure appropriately prevents air, solvent, and the like from leaking to the outside and allows only the required flow rate of air to be introduced into the processing chamber 20. Furthermore, by opening the first shutter 501 and the second shutter 502 to, for example, the same degree, an appropriate airflow from the upstream side to the downstream side can be formed, allowing sublimates to be efficiently removed.

[0073] The shutter operation in the double shutter structure is, for example, as follows. During substrate processing, the first shutter 501 is closed and the second shutter 502 is fully open. During the first cleaning process and the wet cleaning process (second cleaning process), the first shutter 501 and the second shutter 502 are closed. During the pre-wet cleaning process (second cleaning process), the tops of the first shutter 501 and the second shutter 502 are opened to the same extent (for example, about 5 mm to 15 mm). During the dry cleaning replacement process and the wet cleaning drying process, the tops of the first shutter 501 and the second shutter 502 may be opened to the same extent, or only the second shutter 502 may be opened widely. This allows for a stronger airflow. The second shutter 502 may be positioned lower than the first shutter 501. Instead of opening all of the shutters, only the upper part, for example, about 5 to 15 mm (or about ¼ of the opening of the shutter), may be opened to allow the atmospheric air to enter while preventing the atmosphere in the processing chamber from leaking to the outside air. Each shutter may be opened and closed by a motor or a cylinder.

[0074] As shown in Fig. 9, an exhaust line 901 may be provided further above the upper exhaust line 241 as an exhaust configuration. This makes it easier to create a flow for exhausting the sublimates, improving replacement efficiency during exhaust and facilitating the exhaust of the sublimates. Also, as shown in Fig. 9, the solvent supply unit 90 may be provided in a position close to the heating unit 74x (hot plate). This makes it possible to suppress condensation in the solvent supply unit 90.

[0075] FIG. 10 illustrates another modified UV treatment module. In the configuration shown in FIG. 10 , air and nitrogen supply units 991 and 992 are provided at both widthwise ends (side portions) of the treatment chamber 20. The supply units 991 and 992 are connected to air and nitrogen supply devices, respectively. With this configuration, air can be discharged from the side supply units 991 and 992 during, for example, a dry cleaning replacement process and a wet cleaning drying process, thereby efficiently performing the replacement process. Furthermore, selectively discharging air (or discharging air at the timing required to spread the solvent) during, for example, a pre-wet cleaning process can promote the diffusion of the solvent. Furthermore, by changing the diameter and number of exhaust holes on the side portions where the supply units 991 and 992 are provided, for example, by discharging more strongly on the upstream side and less strongly on the downstream side, the air replacement process during exhaust can be accelerated. In this case, the discharge may be gradually reduced from a strong discharge to a weak discharge from the upstream side toward the downstream side.

[0076] 5...vacuum chuck, 7...ultraviolet lamp, 8...control unit, 19...transfer chamber, 20...processing chamber, 50...driving mechanism, 74...processing chamber cover, 74x...heating unit, 90...solvent supply unit, 212...shutter, 241...upper exhaust line, 251...lower exhaust line, 501...shutter, 502...shutter.

Claims

1. A processing apparatus comprising: a processing chamber configured to accommodate a substrate to be processed; an ultraviolet irradiator unit that irradiates ultraviolet light into the processing chamber; a solvent supply unit that supplies a solvent into the processing chamber; and a control unit, wherein the control unit is configured to perform: a substrate processing step in which the ultraviolet irradiator unit is controlled so that ultraviolet light is irradiated onto the substrate in the processing chamber; a first cleaning process in which, after the substrate processing, the ultraviolet irradiator unit is controlled so that ultraviolet light is irradiated into the processing chamber; and a second cleaning process in which, after the first cleaning process, the solvent supply unit is controlled so that a solvent-containing atmosphere is created within the processing chamber.

2. The processing apparatus according to claim 1, wherein the processing chamber has a top plate portion defining an upper end of the processing chamber and having a heating portion, and the control portion heats the top plate portion by controlling the heating portion.

3. The processing apparatus according to claim 2, wherein said control unit controls said heating unit so that the inside of said processing chamber reaches a predetermined temperature or higher by heating said top plate unit at the start of said second cleaning process.

4. The processing apparatus according to claim 1, further comprising: a gas supply unit provided on an upstream side of the processing chamber, which is an entrance side for the substrate, for supplying air into the processing chamber; and an exhaust unit provided on a downstream side of the processing chamber, which is opposite the upstream side, for exhausting air from the processing chamber.

5. The processing apparatus according to claim 4, wherein the control unit controls the exhaust unit so that air is not exhausted from within the processing chamber during the first cleaning process, and controls the exhaust unit so that air is exhausted from within the processing chamber during a third cleaning process which is the start of the second cleaning process.

6. The processing apparatus of claim 5, wherein the control unit controls the gas supply unit so that air is not supplied into the processing chamber during the first cleaning process, controls the gas supply unit so that air is supplied into the processing chamber after the first cleaning process and before the second cleaning process, and controls the exhaust unit so that air within the processing chamber is exhausted, and controls the gas supply unit so that air is supplied into the processing chamber after the second cleaning process, and controls the exhaust unit so that air within the processing chamber is exhausted.

7. A processing apparatus as described in claim 6, wherein the control unit controls the exhaust unit so that air is not exhausted from within the processing chamber during a fourth cleaning process following the third cleaning process in the second cleaning process, and controls the gas supply unit so that air is not supplied into the processing chamber.

8. A processing apparatus as described in claim 1, further comprising: a transfer chamber provided adjacent to the processing chamber on the upstream side of the processing chamber for transferring the substrate; and a shutter provided between the processing chamber and the transfer chamber and configured to be openable and closable, wherein the control unit controls the shutter so that the shutter is closed during the first cleaning process.

9. The processing apparatus according to claim 1, wherein the inside of said processing chamber is an atmospheric air during said first cleaning process.

10. A processing apparatus as described in claim 4, wherein the gas supply unit has a shutter configured to be openable and closable on the substrate entrance side of the processing chamber, and the control unit controls the supply of air by the gas supply unit into the processing chamber by controlling the opening and closing of the shutter.

11. The processing apparatus according to claim 4, wherein the gas supply unit is configured to be able to supply nitrogen instead of air, and the control unit controls the gas supply unit so that nitrogen is supplied during the substrate processing.

12. The processing apparatus according to claim 3, wherein the control unit controls the heating unit so that the inside of the processing chamber is maintained at a predetermined temperature or higher by heating the top plate unit from the start of the first cleaning process to the end of the second cleaning process.

13. The processing apparatus of claim 4, further comprising: a mounting table configured to be able to place the substrate within the processing chamber; and a drive mechanism for moving the mounting table, wherein the control unit controls the drive mechanism so that the mounting table moves between the upstream side and the downstream side within the processing chamber after the first cleaning process and before the second cleaning process.

14. The processing apparatus according to claim 13, wherein the control unit controls the drive mechanism so that the speed at which the stage moves from the upstream side to the downstream side is faster than the speed at which the stage moves from the downstream side to the upstream side.

15. The processing apparatus according to claim 1, wherein the processing chamber is configured to have a variable volume, and the control unit reduces the volume of the processing chamber during the first cleaning process and during the second cleaning process.

16. The processing apparatus according to claim 10, wherein the shutter comprises a first shutter and a second shutter, and the control unit adjusts the amount of air exhausted by the exhaust unit according to the opening degree of the first shutter and the second shutter.

17. A processing method comprising: a substrate processing step of irradiating ultraviolet light onto a substrate in a processing chamber configured to accommodate a substrate to be processed; a first cleaning step of irradiating ultraviolet light into the processing chamber after the substrate processing step; and a second cleaning step of supplying a solvent into the processing chamber so that a solvent-containing atmosphere is formed inside the processing chamber after the first cleaning step.

18. The processing apparatus according to claim 16, wherein the control unit controls the first shutter so that the first shutter is in a closed state during the substrate processing, and controls the second shutter so that the second shutter is in a fully open state.

19. The processing apparatus of claim 16, wherein the control unit controls the first shutter so that the first shutter is in a closed state during the first cleaning process and during the second cleaning process, which is a wet cleaning process, and controls the second shutter so that the second shutter is in a closed state.

20. A processing apparatus as described in claim 16, wherein the control unit controls the first shutter and the second shutter so that the tops of the first shutter and the second shutter are open to the same extent as each other by a predetermined amount during the pre-wet cleaning process which is the second cleaning process.

21. A processing apparatus as described in claim 16, wherein the control unit controls the first shutter and the second shutter during a dry cleaning replacement process and a wet cleaning drying process so that the first shutter and the second shutter are both open at the top by a predetermined amount to the same extent, or so that the second shutter is opened more than the first shutter.

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