Substrate processing apparatus, substrate processing apparatus control method, and substrate processing method

Abstract

The present invention provides a substrate processing apparatus. The substrate processing apparatus may comprise: a chamber providing a processing space; a substrate support part for supporting a substrate in the processing space; and a plasma source for forming plasma that processes the substrate placed on the substrate support part, wherein the substrate support part includes: a chuck body on which the substrate is placed; a chucking electrode for chucking the substrate placed on the chuck body; and a frequency tuning unit which is electrically connected to the chucking electrode and which adjusts the frequency pass characteristic of the chucking electrode.

Description

Substrate processing device, control method of substrate processing device, and substrate processing method

[0001] The present invention relates to a substrate processing device, a control method for the substrate processing device, and a substrate processing method, and more particularly, to a substrate processing device that processes a substrate using plasma, a control method for the substrate processing device, and a substrate processing method.

[0002] Plasma is an ionized gaseous state composed of ions, radicals, and electrons, and is generated by extremely high temperatures, strong electric fields, or high-frequency electromagnetic fields. Semiconductor device manufacturing processes include plasma processes, which utilize plasma to treat substrates such as wafers. For example, plasma processes include etching or ashing processes, which remove films on a substrate by delivering plasma to the substrate.

[0003] Meanwhile, as the size of the substrate being processed increases and the layout of semiconductor integrated circuits formed on the substrate changes from single-layer to multi-layer, chucking the substrate during the plasma process becomes essential. Accordingly, plasma devices that perform plasma processes are equipped with a chucking device for chucking the substrate.

[0004] In general, as a chucking means for chucking a substrate, an electrostatic chuck (ESC) that chucks a substrate by electrostatic force, as illustrated in Fig. 1, can be used. The electrostatic chuck (ESC) is classified into a bipolar type and a monopolar type depending on the configuration of the chucking electrode (CE). Among these, the bipolar type electrostatic chuck (ESC) includes a positive electrode (CE1) and a negative electrode (CE2), and a voltage with a different polarity is applied to each chucking electrode (CE) to perform chucking of the substrate (W). In addition, a lower electrode (LE) is provided at the lower portion of the electrostatic chuck (ESC), and a bias power applied by a bias power supply (RB) is applied to the lower electrode (LE) through a lower impedance matcher (LM).

[0005] Additionally, the chucking motion of the chucking electrode (CE) is controlled by the ESC controller (EC). The ESC controller (EC) is connected to a DC filter (DFI) and a damping resistor (DR). The damping resistor (DR) blocks RF signals that may enter the ESC controller (EC) through the chucking electrode (CE), thereby preventing electrical destruction (burning or short-circuiting) of the ESC controller (EC).

[0006] A heater (H) for heating a substrate (W) is placed on the lower side of the chucking electrode (CE), and the heating operation of the heater (H) is controlled by a temp controller (TC). The temp controller (TC) can be connected to an RF filter (RFI). An RF signal that can be coupled to the heater (H) is blocked from entering the temp controller (TC) by the RF filter (RFI).

[0007] When a plasma device ignites plasma, a plasma sheath is formed on the upper side of the substrate support, and a parasitic capacitance occurs between the plasma sheath and the chucking electrode (CE) due to the structure and material. This affects the chamber impedance as a stray component.

[0008] In the case of the bipolar type, the frequency pass characteristics of the positive electrode (CE1) and the negative electrode (CE2) are different due to differences in the structure, material, and applied voltage of the two electrodes. Therefore, a difference occurs in the RF signal flowing to the positive and negative electrodes. This causes a difference in the thickness of the plasma sheath formed on the upper part of the two electrodes. In other words, the difference in the RF signal flow flowing to the positive and negative electrodes acts as a critical factor that affects the process characteristics (Etch Rate, Uniformity), making it difficult to control the process parameters (Etch Rate / Uniformity) to the desired target level and manage hardware specifications (Tool To Tool Matching).

[0009] The present invention aims to provide a substrate processing device capable of effectively processing a substrate, a control method for the substrate processing device, and a substrate processing method.

[0010] In addition, the present invention aims to provide a substrate processing device capable of improving the uniformity of substrate processing by plasma, a control method for the substrate processing device, and a substrate processing method.

[0011] In addition, the present invention aims to provide a substrate processing device, a control method for the substrate processing device, and a substrate processing method capable of improving process uniformity by controlling the deposition rate or etch rate, etc. even with low RF power by controlling the passage characteristics of an RF signal flowing to the lower part of an electrostatic chuck through a chucking electrode.

[0012] The problems to be solved by the present invention are not limited to the problems described above, and problems not mentioned can be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings.

[0013] The present invention provides a device for processing a substrate. The substrate processing device includes a chamber providing a processing space; a substrate supporter for supporting a substrate in the processing space; and a plasma source for forming plasma for processing a substrate placed on the substrate supporter. The substrate supporter may include a chuck body on which a substrate is placed; a chucking electrode for chucking a substrate placed on the chuck body; and a frequency tuning unit electrically connected to the chucking electrode and for adjusting a frequency pass characteristic of the chucking electrode.

[0014] In one embodiment, the substrate support may further include a chucking controller electrically connected to the frequency tuning unit and controlling a chucking operation of the chucking electrode.

[0015] In one embodiment, the chucking controller may be electrically connected to the frequency tuning unit via a high voltage cable.

[0016] According to one embodiment, the frequency tuning unit may include a tuning inductor installed between a node connected to the high voltage cable and a ground; and a tuning capacitor installed between the node and the ground and connected in parallel with the tuning inductor.

[0017] According to one embodiment, the frequency tuning unit may include a first switch installed between the node and the ground and connected in series with the tuning inductor; and a second switch installed between the node and the ground and connected in series with the tuning capacitor.

[0018] In one embodiment, the chucking controller may include a chucking power supply that applies voltage to the chucking electrode; and a filter for blocking an RF signal from entering the chucking power supply.

[0019] In one embodiment, the chucking electrode may include a first chucking electrode; and a second chucking electrode having a different polarity from the first chucking electrode.

[0020] According to one embodiment, the frequency tuning unit includes a first frequency tuning unit and a second frequency tuning unit, and the first frequency tuning unit and the second frequency tuning unit can be electrically connected to the first chucking electrode and the second chucking electrode, respectively.

[0021] In one embodiment, the plasma source may include an antenna to generate plasma in an ICP (Inductive Coupled Plasma) manner.

[0022] In one embodiment, the plasma source may include an electrode plate to generate plasma in a Capacitively Coupled Plasma (CCP) manner.

[0023] In one embodiment, the substrate support may further include a heater positioned below the chucking electrode; a temperature controller controlling a temperature of the heater; and an RF filter positioned between the heater and the temperature controller.

[0024] In addition, the present invention provides a method for controlling a substrate processing device. The control method may include opening the first switch and short-circuiting the second switch when it is desired to increase the RF signal flow to the frequency tuning unit; and short-circuiting the first switch and the second switch when it is desired to decrease the RF signal flow to the frequency tuning unit.

[0025] In one embodiment, when the first switch is opened and the second switch is short-circuited, the frequency tuning unit functions as a band pass filter;

[0026] In one embodiment, when the first switch and the second switch are short-circuited, the frequency tuning unit can function as a band stop filter.

[0027] In addition, the present invention provides a method for processing a substrate. The substrate processing method comprises generating plasma by exciting a process gas and transferring the generated plasma to the substrate to process the substrate, and controlling a frequency tuning unit electrically connected to a chucking electrode of a substrate support unit that supports the substrate to function as either a band pass filter or a band stop filter, thereby controlling the flow of an RF signal to the chucking electrode.

[0028] According to one embodiment, the frequency tuning unit is electrically connected to a chucking control unit that controls a chucking operation of the chucking electrode, the chucking control unit including a chucking power source and a filter, and when the frequency tuning unit functions as the band stop filter, the RF signal flow flowing into the chucking power source can be blocked through the filter.

[0029] According to one embodiment, the chucking electrode includes a positive electrode and a negative electrode, and the frequency tuning unit includes a first frequency tuning unit connected to the positive electrode and a second frequency tuning unit connected to the negative electrode, and the flow of the RF signal flowing into the positive electrode and the negative electrode can be controlled through switching of switches included in each of the first frequency tuning unit and the second frequency tuning unit.

[0030] According to one embodiment of the present invention, a substrate can be efficiently processed.

[0031] In addition, according to one embodiment of the present invention, the uniformity of substrate processing by plasma can be improved.

[0032] In addition, according to one embodiment of the present invention, by controlling the passage characteristics of an RF signal flowing to the lower part of an electrostatic chuck through a chucking electrode, the deposition rate or etch rate can be controlled even with low RF power, thereby improving process uniformity.

[0033] The effects of the present invention are not limited to the effects described above, and effects not mentioned can be clearly understood by a person having ordinary skill in the art to which the present invention pertains from this specification and the attached drawings.

[0034] Figure 1 is a drawing showing the appearance of a typical substrate support.

[0035] FIG. 2 is a drawing schematically showing a substrate processing device according to one embodiment of the present invention.

[0036] Figure 3 is a drawing showing the substrate processing device of Figure 2 processing a substrate.

[0037] Fig. 4 is a block diagram showing an equivalent circuit of the frequency tuning unit, chucking controller, and chucking electrode of Fig. 2.

[0038] Fig. 5 is a block diagram showing the flow of RF signals when the frequency tuning unit of Fig. 2 is operated in the first mode.

[0039] Fig. 6 is a block diagram showing the flow of RF signals when the frequency tuning unit of Fig. 2 is operated in the second mode.

[0040] FIG. 7 is a drawing schematically showing a substrate processing device according to another embodiment of the present invention.

[0041] FIG. 8 is a drawing schematically showing a substrate processing device according to another embodiment of the present invention.

[0042] FIG. 9 is a block diagram showing a frequency tuning unit according to another embodiment of the present invention.

[0043] The various features and advantages of the non-limiting embodiments of this disclosure will become more apparent upon review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. The accompanying drawings are not to scale unless explicitly stated otherwise. Various dimensions in the drawings may be exaggerated for clarity.

[0044] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. These exemplary embodiments are provided so that this disclosure will be thorough and will fully convey the scope of the present disclosure to those skilled in the art. To provide a thorough understanding of the embodiments of the present disclosure, numerous specific details, such as examples of specific components, devices, and methods, are set forth. It will be apparent to those skilled in the art that specific details are not necessarily required, and that the exemplary embodiments can be implemented in many different forms, and neither should be construed as limiting the scope of the present disclosure. In some exemplary embodiments, well-known processes, well-known device structures, and well-known techniques are not described in detail.

[0045] The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the example embodiments. As used herein, the singular or non-plural forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are open-ended and thus specify the presence of stated features, elements, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, elements, steps, operations, elements, components, and / or groups thereof. The method steps, processes, and operations herein are not necessarily to be construed as necessarily being performed in the particular order discussed or described, unless such order is explicitly stated. Additionally, additional or alternative steps may be selected.

[0046] When an element or layer is referred to as being "on," "connected," "joined," "attached," "adjacent," or "covering" another element or layer, it is intended that it is directly on, connected, joined, attached, adjacent, or covering said other element or layer, or that intermediate elements or layers may be present. Conversely, when an element is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, it should be understood that no intermediate elements or layers are present. Like reference numerals refer to like elements throughout the specification. The term "and / or" as used herein includes all combinations and subcombinations of one or more of the listed items.

[0047] Although terms such as first, second, third, etc. may be used herein to describe various elements, regions, layers, and / or sections, it should be understood that these elements, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, region, layer, or section from another element, region, layer, or section. Thus, a first element, a first region, a first layer, or a first section discussed below could also be referred to as a second element, a second region, a second layer, or a second section without departing from the teachings of the exemplary embodiments.

[0048] Spatially relative terms (e.g., "beneath," "beneath," "lower," "above," "top," etc.) may be used for convenience of description to describe the relationship of one element or feature to other element(s) or features as depicted in the drawings. It should be understood that spatially relative terms are intended to encompass not only the orientation depicted in the drawings, but also other orientations of the device in use or operation. For example, if the device in the drawings were turned over, elements described as "beneath" or "below" other elements or features would then be oriented "above" the other elements or features. Thus, the term "beneath" can encompass both above and below orientations. The device can be oriented differently (rotated 90 degrees, or at other orientations), and the spatially relative descriptive phrases used herein can be interpreted accordingly.

[0049] When using the terms "same" or "same" in the description of embodiments, it should be understood that there may be some inaccuracy. Therefore, when one element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as the other element or value within a manufacturing or operating tolerance (e.g., ±10%).

[0050] When the terms "approximately" or "substantially" are used herein in connection with a numerical value, it should be understood that the numerical value includes manufacturing or operating tolerances (e.g., ±10%) of the stated value. Furthermore, when the terms "typically" and "substantially" are used in connection with geometrical shapes, it should be understood that geometrical accuracy is not required, but that latitude in the shape is within the disclosed scope.

[0051] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments pertain. Furthermore, terms, including terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning within the context of the relevant art, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0052] The substrate processing device (1) described below is an example of a device that processes a substrate (W) using plasma. The substrate processing device (1) may be a plasma device capable of performing a deposition, etching, or ashing process. In addition, the substrate processing device (1) may be a device that processes a substrate (W), which may be a wafer, to perform a process for manufacturing a semiconductor device.

[0053] FIG. 2 is a drawing schematically showing a substrate processing device according to one embodiment of the present invention.

[0054] Referring to FIG. 2, a substrate processing device (1) according to one embodiment of the present invention may include a chamber (10), a gas supply unit (20), a plasma source (30), a substrate support unit (40), and a control device (50).

[0055] The chamber (10) provides a processing space (11) capable of processing a substrate (W). A plasma processing process for the substrate (W) can be performed in the processing space (11) provided by the chamber (10). The plasma processing process may be a process for processing the substrate (W) using plasma, such as a deposition, etching, or ashing process. The processing space (11) may be provided as a symmetrical space based on the central axis of the chamber (10), and the inner wall of the chamber (10) may be coated with a material having excellent corrosion resistance against plasma, or may be provided by post-processing in a form in which it is difficult for a deposition material to be deposited.

[0056] The gas supply unit (20) can supply a process gas to the processing space (11). The process gas may be a gas that can be excited into a plasma state by a plasma source (30) described later. The plasma excited by the process gas can be transferred to the substrate (W) to perform a processing process on the substrate (W). The gas supply unit (20) may include a gas supply line (21) and a gas supply source (22). The gas supply source (22) stores and supplies the process gas, and the gas supply line (21) may be connected to the chamber (10) and configured to supply the process gas to the processing space (11) provided by the chamber (10).

[0057] The gas supply unit (20) can supply process gas to the processing space (11) by various types of gas injection means (not shown) such as a shower head, a gas distribution plate, a gas supply ring, a gas nozzle, and a gas block.

[0058] The plasma source (30) can generate plasma for processing the substrate (W). The plasma source (30) can be configured to generate plasma in an ICP (Inductive Coupled Plasma) manner or in a CCP (Capacitively Coupled Plasma) manner. In Fig. 2, a case of generating plasma in an ICP manner is illustrated as an example, and in this case, the plasma source (30) can include an antenna (31) installed at the top of the chamber (10). In this case, the substrate support member (40) described below can have a potential lower than 0 as a cathode.

[0059] In contrast, when plasma is generated using the CCP method, the plasma source (30) may include an electrode plate (not shown). In this case, the electrode with a larger area among the electrode plate and the substrate support member (40) described later may become the cathode, and the other electrode may become the anode.

[0060] Additionally, the plasma source (30) may include a source power source (32) that applies high-frequency power to the antenna (31) and an upper impedance matcher (33). The source power source (32) may be an RF power source that excites process gas supplied to the processing space (11). The upper impedance matcher (33) helps ensure that the source power applied by the source power source (32) is properly transmitted to the antenna (31) through impedance matching.

[0061] The substrate support (40) can support the substrate (W). The substrate support (40) can include a chuck body (41), a chucking electrode (42), a heater (43), an electrode cable (44), a chucking control cable (45), a chucking controller (46), a heater control cable (47), a filter (48), a temperature controller (49), a lower electrode (LE), a lower impedance matcher (LM), a bias power supply (RB), and a frequency tuning unit (FTN).

[0062] The chuck body (41) may have a support surface that supports the substrate (W). The chuck body (41) may be formed of a material including a dielectric. The chuck body (41) may be formed of a material including a dielectric, for example, AlN, Al2O3, SiO2, SiC, Y2O3, and combinations thereof.

[0063] Additionally, the chuck body (41) may be provided as an integral body, or may be provided by connecting multiple divided plates together.

[0064] In addition, a lower electrode (LE) may be provided at the lower portion of the chuck body (41). A bias power applied by a bias power source (RB) may be applied to the lower electrode (LE). The bias power may affect the flow of plasma transferred to the substrate (W). For example, the bias power may accelerate ions of the plasma to collide with the substrate (W). A lower impedance matcher (LM) may be provided between the lower electrode (LE) and the bias power source (RB). The lower impedance matcher (LM) may help the power of the bias power source (RB) to be properly transferred to the lower electrode (LE) through impedance matching.

[0065] The lower electrode (LE) may be positioned below the chucking electrode (42). In addition, in the above-described example, the lower electrode (LE) is illustrated as being provided as a bias electrode, but in some cases, the lower electrode (LE) may be connected to a bias power source to function as a bias electrode, or may be connected to an additional source power source other than the source power source (32) to function as a source electrode. In addition, when the plasma source (30) is provided as a CCP type, it may function as a counter electrode with respect to the electrode plate located on the upper side.

[0066] A chucking electrode (42) may be provided on the chuck body (41). The chucking electrode (42) may be provided as an electrode that chucks the substrate (W) with electrostatic force. That is, the substrate support member (40) provided with the chucking electrode (42) may function as an electrostatic chuck (ESC). For example, the substrate support member (40) may be configured as a bipolar type electrostatic chuck.

[0067] The chucking electrode (42) may include a first chucking electrode (42a) and a second chucking electrode (42b) so that the substrate support (40) can function as a bipolar type electrostatic chuck. Voltages of different polarities may be applied to the first chucking electrode (42a) and the second chucking electrode (42b). For example, a positive voltage may be applied to the first chucking electrode (42a), and a negative voltage may be applied to the second chucking electrode (42b). That is, the first chucking electrode (42a) may be a positive electrode, and the second chucking electrode (42b) may be a negative electrode. When a positive voltage is applied to the first chucking electrode (42a) and a negative voltage is applied to the second chucking electrode (42b), the positive voltage and the negative voltage may exert an attractive / repulsive force on charges on the surface of the substrate (W), so that the substrate (W) may be chucked.

[0068] The first chucking electrode (42a) can function as a positive electrode, and the second chucking electrode (42b) can function as a negative electrode. The first chucking electrode (42a) and the second chucking electrode (42b) can be provided in a generally plate shape. In addition, the first chucking electrode (42a) and the second chucking electrode (42b) can each be provided in multiples, and can be arranged alternately on the chuck body (51).

[0069] As voltage is applied to the chucking electrode (42), the chucking electrode (42) generates an electrostatic force, and the generated electrostatic force can chuck the substrate (W) placed on the chuck body (41).

[0070] In addition, the chucking electrode (42) may be installed at the position closest to the substrate (W) among the components installed on the chuck body (41). For example, the chucking electrode (42) may be configured to be provided on the chuck body (41) closer to the substrate (W) placed on the chuck body (41) than the lower electrode (LE) and the heater (43).

[0071] A heater (43) can heat a substrate (W) placed on a chuck body (41). The heater (43) can be provided as a heating means such as a resistive coil. When voltage is applied to the heater (43), the heater (43) can generate heat. The heat generated by the heater (43) heats the chuck body (41), and the heated chuck body (41) can heat the substrate (W) placed on the chuck body (41).

[0072] In addition, the substrate support (40) may include a temperature sensor capable of measuring the temperature of the heater (43), and the temperature controller (49) described below may perform feedback control, such as raising or lowering the temperature of the heater (43), so that the temperature of the heater (43) can reach the set temperature when the temperature of the heater (43) sensed by the temperature sensor does not reach the set temperature.

[0073] The electrode cable (44) can electrically connect the chucking electrode (42) and the frequency tuning unit (FTN) to each other. The electrode cable (44) may be a high voltage cable suitable for applying high voltage / current. One end of the electrode cable (44) may be connected to the chucking electrode (42), and the other end may be connected to the frequency tuning unit (FTN). The electrode cable (44) may include a first electrode cable (44a) and a second electrode cable (44b). The first electrode cable (44a) may be connected to the first chucking electrode (42a) and the first frequency tuning unit (FTN1) described below, and the second electrode cable (44b) may be connected to the second chucking electrode (42b) and the second frequency tuning unit (FTN2).

[0074] In addition, the chucking control cable (45) can electrically connect the frequency tuning unit (FTN) and the chucking controller (46) to each other. The chucking control cable (45) may be a high voltage cable suitable for applying high voltage / current. One end of the chucking control cable (45) may be connected to the frequency tuning unit (FTN), and the other end may be connected to the chucking controller (46). The chucking control cable (45) may include a first chucking control cable (45a) and a second chucking control cable (45b). The first chucking control cable (45a) may be connected to the first frequency tuning unit (FTN1) and the chucking controller (46), and the second chucking control cable (45b) may be connected to the second frequency tuning unit (FTN2).

[0075] The chucking controller (46) can control the generation of electrostatic force of the chucking electrode (42). The chucking controller (46) can be configured to receive a control signal from a control device (50) described later and control the chucking operation of the chucking electrode (42). The chucking controller (46) can be a controller configured with a chucking power supply, at least one switch, and other circuits for controlling the operation of the chucking electrode (42). The chucking power supply can be a DC power supply. In addition, the chucking controller (46) can include a filter for blocking an RF signal that can be transmitted to the chucking electrode (42) by the RF power of the plasma and / or the source power (32) generated in the processing space (11) from being introduced into the chucking power supply. The filter can be an RF signal filter that blocks high-frequency RF signals.

[0076] A heater control cable (47) can electrically connect a heater (43) and a temperature controller (49). The heater control cable (47) can include a first heater control cable (47a) and a second heater control cable (47b).

[0077] The temperature controller (49) can control the heat generation of the heater (43). The temperature controller (49) can be configured to receive a control signal from a control device (50) described later and control the heating operation of the heater (43). The temperature controller (49) can be a controller configured with a heating power source, at least one switch, and other circuits for controlling the operation of the heater (43). The heating power source can be a DC power source. In addition, a filter (48) can be connected in front of the temperature controller (49) to block an RF signal that can be transmitted to the heater (43) by the RF power of the plasma and / or the source power source (32) generated in the processing space (11) from being introduced into the heating power source. The filter (48) can be an RF signal filter that blocks high-frequency RF signals.

[0078] The frequency tuning unit (FTN) may be electrically connected to the chucking electrode (42). The frequency tuning unit (FTN) may be electrically connected to the chucking controller (46). The frequency tuning unit (FTN) may also be referred to as a Frequency Tuning Network. The frequency tuning unit (FTN) adjusts the frequency pass characteristics of the RF signal flowing into the chucking electrode (42), thereby adjusting the impedance ratio between the chucking electrodes (42), thereby improving the processing efficiency for the substrate (W). The frequency tuning unit (FTN) may include a first frequency tuning unit (FTN1) connected to the first chucking electrode (42a), and a second frequency tuning unit (FTN2) connected to the second chucking electrode (42b). The first frequency tuning unit (FTN1) and the second frequency tuning unit (FTN2) may have the same circuit structure. A specific circuit structure for the frequency tuning unit (FTN) will be described later.

[0079] The control device (50) may be equipped with a process controller including a microprocessor (computer) that executes control of the components of the substrate processing device (1), a user interface including a keyboard through which an operator inputs commands to manage the substrate processing device, a display that visually displays the operating status of the substrate processing device, and a memory unit in which a control program for executing processing executed in the substrate processing device (1) under the control of the process controller, or a program for executing processing in each component according to various data and processing conditions, i.e., a process recipe, is stored. In addition, the user interface and the memory unit may be connected to the process controller. The processing recipe may be stored in a storage medium among the memory units, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as a flash memory.

[0080] Figure 3 is a drawing showing the substrate processing device of Figure 2 processing a substrate.

[0081] Referring to FIG. 3, the substrate processing device (1) of the present invention supplies a process gas to a processing space (11), a plasma source (30) forms an electric field in the processing space (11), and the formed electric field excites the process gas to generate plasma. The generated plasma is transferred to a substrate (W) to remove a film on the substrate (W) or to form a film on the substrate (W). The process of removing the film may be an etching process or an ashing process, and the process of forming the film may be a deposition process.

[0082] When plasma is ignited in the processing space (11), a plasma sheath is formed near the inner wall of the chamber (10) and near the upper surface of the substrate (W) placed on the substrate support (40). The thickness of this plasma sheath affects the angle at which the plasma is incident on the substrate (W), and therefore, the thickness of the plasma sheath affects the uniformity of substrate (W) processing.

[0083] Meanwhile, the RF signal of the processing space (11) can be introduced into the chucking electrode (42) by the plasma generated in the processing space (11) and the RF power applied by the source power source (32). Since the chucking electrode (42) is the electrode placed closest to the substrate (W), the plasma sheath thickness can vary depending on the passage characteristics (frequency passage characteristics) of the RF signal to the chucking electrode (42).

[0084] Fig. 4 is a block diagram showing an equivalent circuit of the frequency tuning unit, chucking controller, and chucking electrode of Fig. 2.

[0085] Referring to FIG. 4, the chucking electrode (42) can be defined as a capacitor from an RF perspective. Furthermore, the chucking control cable (45), which is a high-voltage cable, can be defined as an inductor. Furthermore, a damping resistor (DR) can be installed in the chucking control cable (45). The damping resistor (DR) can perform the function of blocking microscopic RF signals that may flow toward the chucking controller (46).

[0086] The chucking electrode (42) is electrically insulated from the substrate (W), which is a wafer, by the chuck body (41) formed of a material including a dielectric, but when plasma is ignited, it has a capacitance having a specific pF depending on the area seen by the chucking electrode (42) and the substrate (W), the distance of insulation (the distance between the chucking electrode (42) and the substrate (W), and the permittivity of the chuck body (41). In addition, the chucking control cable (45) also has inductance depending on its cross-sectional area and length.

[0087] Meanwhile, the frequency tuning unit (FTN) is connected to the chucking electrode (42) and the chucking controller (46). The frequency tuning unit (FTN) may include a tuning inductor (L2), a tuning capacitor (C2), a first switch (SW1), and a second switch (SW2).

[0088] The tuning inductor (L2) may be provided as a fixed inductor or a variable inductor. The tuning capacitor (C2) may be provided as a fixed capacitor or a variable capacitor. FIG. 4 illustrates an example in which the tuning inductor (L2) is a fixed inductor and the tuning capacitor (C2) is a variable capacitor.

[0089] For example, with respect to a node (N1) connected to a frequency tuning unit (FTN), a chucking electrode (42), and a chucking control cable (45), one end of a tuning inductor (L2) may be selectively connected to the node (N1) via a first switch (SW1), and the other end may be connected to ground. The first switch (SW1) and the tuning inductor (L2) may be connected in series. One end of a variable capacitor (C2) may be connected to the node (N2) via a second switch (SW2), and the other end may be connected to ground. The variable capacitor (C2) and the second switch (SW2) may be connected in series. The tuning capacitor (C2) and the tuning inductor (L2) may be elements that are connected in parallel with respect to the node (N1). The positions of the first switch (SW1) and the tuning inductor (L2) may be exchanged. The positions of the variable capacitor (C2) and the second switch (SW2) can be interchanged.

[0090] The frequency tuning unit (FTN) can have its frequency pass characteristics adjusted according to the switching of the first switch (SW1) and the second switch (SW2) and according to the capacitance adjustment of the variable capacitor (C2). The switching and capacitance adjustment of the frequency tuning unit (FTN) can be performed based on a control signal generated by the control device (50) and / or the chucking controller (46). For example, the control device (50) can generate a control signal for controlling the chucking controller (46), and based on this, the chucking controller (46) can generate a control signal for controlling the frequency tuning unit (FTN). Alternatively, the control device (50) can also directly generate a control signal for controlling the frequency tuning unit (FTN).

[0091] The frequency tuning unit (FTN) can be switched between the first mode and the second mode.

[0092] Fig. 5 is a block diagram showing the flow of RF signals when the frequency tuning unit of Fig. 2 is operated in the first mode.

[0093] Referring to FIG. 5, when the frequency tuning unit (FTN) operates in the first mode, the first switch (SW1) may be opened and the second switch (SW2) may be closed.

[0094] In the first mode, the frequency tuning unit (FTN) can operate as a band pass filter. The frequency tuning unit (FTN) of the first mode can function as a filter that can pass an RF signal that can be introduced into the chucking electrode (42) when plasma is ignited in the processing space (11). In this case, the RF signal introduced into the chucking electrode (42) can flow toward the ground. That is, in the first mode, as the flow of the RF signal to the frequency tuning unit (FTN) increases, the thickness of the plasma sheath on the upper side of the chucking electrode (42) changes, and also, as the reference potential on the substrate (W) is adjusted, the bombardment of plasma ions colliding with the substrate (W) can be changed. In addition, in the first mode, the flow of the RF signal flowing toward the ground can be additionally adjusted by adjusting the capacitance of the tuning capacitor (C2).

[0095] Fig. 6 is a block diagram showing the flow of RF signals when the frequency tuning unit of Fig. 2 is operated in the second mode.

[0096] Referring to Fig. 6, when the frequency tuning unit (FTN) operates in the second mode, the first switch (SW1) and the second switch (SW2) can be closed.

[0097] In the second mode, the frequency tuning unit (FTN) can operate as a band stop filter. The frequency tuning unit (FTN) of the second mode can function as a filter that can block an RF signal that may flow into the chucking electrode (42) when plasma is ignited in the processing space (11). In this case, the RF signal flowing into the chucking electrode (42) may hardly flow into the frequency tuning unit (FTN). Some of the minute RF signals flowing into the chucking electrode (42) may flow toward the chucking controller (46), but this may be blocked by a damping resistor (DR) installed in the chucking control cable (45), the chucking control cable (45) that functions as an inductor, and the RF filter provided in the chucking controller (46). Accordingly, some of the RF signals that may flow into the chucking electrode (42) may be blocked from flowing into the chucking power supply of the chucking controller (46).

[0098] That is, in the second mode, the flow of the RF signal to the frequency tuning unit (FTN) becomes smaller, so that the thickness of the plasma sheath on the upper side of the chucking electrode (42) changes, and also, as the reference potential on the substrate (W) is adjusted, the bombardment of plasma ions colliding with the substrate (W) can be changed.

[0099] According to an embodiment of the present invention, the frequency pass characteristic of the chucking electrode (42) can be adjusted by switching the function of the frequency tuning unit (FTN) between a band pass filter and a band stop filter, and also by adjusting the capacitance of the tuning capacitor (C2).

[0100] As described above, the first chucking electrode (42a), which is a positive electrode, and the second chucking electrode (42b), which is a negative electrode, have different impedances and different frequency pass characteristics, which makes it difficult to uniformly process the substrate (W) due to an imbalance in the plasma sheath during the process. Therefore, the present invention connects a frequency tuning unit (FTN) capable of adjusting the frequency pass characteristics of the electrodes to each of the first chucking electrode (42a) and the second chucking electrode (42b), switches the function of the frequency tuning unit (FTN) between a band pass filter and a band stop filter, and adjusts the capacitance of the tuning capacitor (C2), thereby making it possible to adjust the frequency pass characteristics between the chucking electrodes (42) to be identical or similar. Through this, the problem that uniformly processing the substrate (W) becomes difficult due to an imbalance in the plasma sheath as the process progresses can be solved.

[0101] In particular, the present invention can effectively control the reference potential on the substrate (W) by controlling the frequency pass characteristics of the chucking electrode (42) positioned closest to the substrate (W), more so than when controlling the frequency pass characteristics of an electrode (which may be a bias electrode, a source electrode, or a counter electrode) that may be positioned below the chucking electrode (42).

[0102] FIG. 7 is a drawing schematically showing a plasma device according to another embodiment of the present invention.

[0103] In the above-described example, the chucking electrode (42) is provided as a bipolar type in which the first chucking electrode (42a) and the second chucking electrode (42b) are distinguished, but the present invention is not limited thereto. For example, as illustrated in FIG. 7, by providing a single chucking electrode (42), the chucking electrode (42) may be provided as a monopolar type.

[0104] FIG. 8 is a drawing schematically showing a plasma device according to another embodiment of the present invention.

[0105] Although the first chucking electrode (42a) and the second chucking electrode (42b) are each provided with a frequency tuning unit (FTN) as an example, the present invention is not limited thereto. For example, as illustrated in Fig. 8, both the first chucking electrode (42a) and the second chucking electrode (42b) may be connected to a single frequency tuning unit (FTN).

[0106] In the above example, the tuning inductor (L2) of the frequency tuning unit (FTN) is illustrated as a fixed inductor, but the present invention is not limited thereto. For example, as illustrated in FIG. 9, the tuning inductor (L2) may be provided as a variable inductor. Harmonics components can also be removed through the frequency tuning unit (FTN), and since the tuning inductor (L2) is provided as a variable inductor, changes in harmonics that may change according to the size of the source power and changes in process parameters can be appropriately responded to. For example, the control device (50) may adjust the pass and cutoff frequency ranges of the frequency tuning unit (FTN) by changing the inductance of the tuning inductor (L2) before / after the process or during the process.

[0107] It should be understood that exemplary embodiments have been disclosed herein, and that other variations are possible. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but, where applicable, may be interchangeable and used in a selected embodiment, even if not specifically illustrated or described. Such variations should not be considered a departure from the spirit and scope of the present disclosure, and all such modifications apparent to those skilled in the art are intended to be included within the scope of the following claims.

[0108] [Explanation of symbols]

[0109] Resistance: DR

[0110] DC Filter: DFI

[0111] RF Filter: RFI

[0112] ESC controller: EC

[0113] Temp Controller: TC

[0114] Substrate processing unit: 1

[0115] Chambers: 10

[0116] Processing space: 11

[0117] Gas supply: 20

[0118] Gas supply lines: 21

[0119] Gas source: 22

[0120] Plasma Source: 30

[0121] Antennas: 31

[0122] Source Power: 32

[0123] Upper impedance matcher: 33

[0124] Substrate support: 40

[0125] Chuck Body: 41

[0126] Chucking electrodes: 42

[0127] 1st chucking electrode: 42a

[0128] Second chucking electrode: 42b

[0129] Heater: 43

[0130] Electrode cables: 44

[0131] 1st electrode cable: 44a

[0132] Second electrode cable: 44b

[0133] Chucking control cable: 45

[0134] 1st chucking control cable: 45A

[0135] Second chucking control cable: 45b

[0136] Damping resistance: DR

[0137] Chucking controller: 46

[0138] Heater control cable: 47

[0139] 1st heater control cable: 47a

[0140] Second heater control cable: 47b

[0141] Filter: 48

[0142] Temperature controller: 49

[0143] Lower electrode: LE

[0144] Lower impedance matcher: LM

[0145] Bias power: RB

[0146] Frequency tuning section: FTN

[0147] Node: N1

[0148] Tuning inductor: L2

[0149] Tuning capacitor: C2

[0150] First switch: SW1

[0151] Second switch: SW2

[0152] Control Unit: 50

Claims

1. In a device for processing a substrate, A chamber providing a processing space; A substrate support member for supporting a substrate in the above processing space; and A plasma source is included that forms plasma for processing a substrate placed on the substrate support, The above substrate support part, A chuck body on which the substrate is placed; A chucking electrode for chucking a substrate placed on the chuck body; and A substrate processing device comprising a frequency tuning unit electrically connected to the chucking electrode and controlling the frequency pass characteristics of the chucking electrode.

2. In paragraph 1, The above substrate support part, A substrate processing device further comprising a chucking controller electrically connected to the frequency tuning unit and controlling a chucking operation of the chucking electrode.

3. In paragraph 2, A substrate processing device, wherein the chucking controller is electrically connected to the frequency tuning unit via a high voltage cable.

4. In paragraph 3 The above frequency tuning section, A tuning inductor installed between the node connected to the high voltage cable and the ground; and A substrate processing device comprising a tuning capacitor installed between the node and the ground and connected in parallel with the tuning inductor.

5. In paragraph 4, A substrate processing device wherein the above tuning inductor is a variable inductor.

6. In paragraph 4, A substrate processing device wherein the above tuning capacitor is a variable capacitor.

7. In paragraph 4, The above frequency tuning section, a first switch installed between the above node and the ground and connected in series with the tuning inductor; and A substrate processing device comprising a second switch installed between the node and the ground and connected in series with the tuning capacitor.

8. In paragraph 7, The above chucking controller is, A chucking power supply for applying voltage to the chucking electrode; and A substrate processing device comprising a filter for blocking RF signals from entering the chucking power source.

9. In paragraph 7, The above chucking electrode is, First chucking electrode; and A substrate processing device comprising a second chucking electrode having a different polarity from the first chucking electrode.

10. In paragraph 9, A substrate processing device, wherein the frequency tuning unit includes a first frequency tuning unit and a second frequency tuning unit, and the first frequency tuning unit and the second frequency tuning unit are electrically connected to the first chucking electrode and the second chucking electrode, respectively.

11. In paragraph 1, The above plasma source is a substrate processing device including an antenna to generate plasma in an ICP (Inductive Coupled Plasma) manner.

12. In paragraph 1, The above plasma source is a substrate processing device including an electrode plate to generate plasma in a CCP (Capacitively Coupled Plasma) manner.

13. In any one of paragraphs 1 to 12, The above substrate support part, A heater positioned beneath the chucking electrode; a temperature controller for controlling the temperature of the above heater; and A substrate processing device further comprising an RF filter positioned between the heater and the temperature controller.

14. A method for controlling a substrate processing device according to any one of claims 7 to 10, If it is desired to increase the RF signal flow to the above frequency tuning section, open the first switch and short the second switch; A method of controlling a substrate processing device, wherein the first switch and the second switch are short-circuited when the RF signal flow to the frequency tuning section is to be reduced.

15. In paragraph 14, When the first switch is opened and the second switch is short-circuited, the frequency tuning section functions as a band pass filter; A control method for a substrate processing device, wherein the frequency tuning unit functions as a band stop filter when the first switch and the second switch are short-circuited.

16. In the method of processing the substrate, The process gas is introduced to generate plasma, and the generated plasma is transferred to the substrate to process the substrate. A substrate processing method, wherein a frequency tuning unit electrically connected to a chucking electrode of a substrate supporter supporting the substrate is controlled to function as either a band pass filter or a band stop filter, thereby controlling the flow of an RF signal to the chucking electrode.

17. In paragraph 16, The above frequency tuning unit is electrically connected to a chucking control unit that controls the chucking operation of the chucking electrode, the chucking control unit including a chucking power supply and a filter, A substrate processing method, wherein the RF signal flow flowing into the chucking power supply is blocked through the filter when the frequency tuning unit functions as the band stop filter.

18. In paragraph 16, The above chucking electrode includes a positive electrode and a negative electrode, The above frequency tuning unit includes a first frequency tuning unit connected to the positive electrode, and a second frequency tuning unit connected to the negative electrode. A substrate processing method, wherein the flow of the RF signal flowing into the positive electrode and the negative electrode is controlled by switching the switches included in each of the first frequency tuning unit and the second frequency tuning unit.

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