Intelligent power module and electronic device

Abstract

An intelligent power module and an electronic device, the intelligent power module comprising a driving bonding pad, a first pin, a second pin, three bootstrap bonding pads and three bootstrap chips. In a first direction, the first pin and a first sub-bonding pad are arranged at intervals, and the second pin is at least partially arranged between the driving bonding pad and the first pin at intervals. The three bootstrap bonding pads are arranged on the second pin, and are arranged at intervals in a second direction perpendicular to the first direction. The three bootstrap chips are respectively arranged corresponding to the three bootstrap bonding pads. The electronic device comprises the intelligent power module.

Description

Intelligent power modules and electronic devices

[0001] This application claims priority to Chinese patent application No. 202311635074.8, filed on November 30, 2023, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present disclosure relates to the field of semiconductor technology, and in particular to an intelligent power module and an electronic device. Background Art

[0003] Intelligent Power Modules (IPMs) typically use an N-type semiconductor substrate with a P-type semiconductor layer on the front to form a boost diode within the IPM. The N-type semiconductor substrate of the boost diode is soldered to a pad connected to the high-side driver floating supply voltage. The P-type diode's P-pole is connected via a wire to the pin connected to the high-side driver chip's supply voltage.

[0004] Summary of the Invention

[0005] The present disclosure aims to at least solve the technical problem in the related art that the bootstrap chip and the frame located at the edge of the intelligent power module are prone to delamination.

[0006] In one aspect, an intelligent power module is provided, comprising a driver pad and at least one first pin. The driver pad includes a first sub-pad. The at least one first pin is spaced apart from the first sub-pad in a first direction, and the at least one first pin is capable of coupling to a high-side driver floating supply voltage.

[0007] The intelligent power module also includes a second pin. In the first direction, at least a portion of the second pin is arranged between the first sub-pad and the at least one first pin. The second pin extends along at least a portion of the outer periphery of the first sub-pad, and the second pin is coupled to the power supply voltage of the high-side driver chip.

[0008] The intelligent power module further includes at least one bootstrap pad and at least one bootstrap chip, wherein the at least one bootstrap pad is connected to the second pin, the at least one bootstrap chip is disposed on the at least one bootstrap pad, and the at least one bootstrap chip can be coupled to the at least one first pin.

[0009] On the other hand, an electronic device is provided, comprising the above-mentioned intelligent power module.

[0010] Therefore, by setting the bootstrap pad on the second pin and setting the bootstrap chip corresponding to the bootstrap pad on the second pin, the position of the bootstrap chip in the intelligent power module can be made close to the driving pad, that is, close to the middle position of the intelligent power module, thereby reducing the possibility of delamination between the bootstrap chip and the frame, thereby improving the robustness and reliability of the bootstrap chip in the intelligent power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] FIG1 is a structural diagram of an intelligent power module according to some embodiments of the present disclosure;

[0012] FIG2 is a partial enlarged view of the circle A in FIG1 ;

[0013] FIG3 is a partial enlarged view of the circle B in FIG2 ;

[0014] FIG4 is a schematic diagram of a bootstrap chip according to some embodiments of the present disclosure; and

[0015] FIG5 is a circuit connection diagram according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0016] The following will be combined with the accompanying drawings to clearly and completely describe some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0017] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0018] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0019] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0020] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0021] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0022] The use of "adapted to" or "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0023] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0024] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0025] In related art, the boost diode (i.e., bootstrap chip) of an intelligent power module uses an N-type semiconductor material as its substrate. A high-side floating supply voltage pin (i.e., the first pin) is located at the edge of the intelligent power module package. The first pin extends beyond the bootstrap pad to provide a soldering location for the boost diode. The N-type substrate of the boost diode is soldered to the bootstrap pad of the first pin through a frame, and the P-type pole of the boost diode is connected to the high-side driver chip supply voltage pin (i.e., the second pin) via a wire. This allows the boost diode to be installed.

[0026] However, in this case, the boost diode is disposed at the edge of the package of the intelligent power module. When subjected to stress or thermal stress, the boost diode and the frame are easily delaminated, thereby affecting the robustness and reliability of the intelligent power module.

[0027] In order to ensure the structural reliability of the boost diode on the intelligent power module, the intelligent power module in the related art has a through hole at one end of the first pin away from the bootstrap chip along the first direction, so as to fill resin into the edge of the intelligent power module through the through hole, thereby enhancing the connection strength between the bootstrap chip and the frame.

[0028] In addition, the first pin also requires a welding lead to connect the electrode lead of the high-side drive floating power supply voltage and the driver chip. During the welding process of the N substrate of the boost diode and the bootstrap pad, the solder of the boost diode is prone to overflow, thereby affecting the welding effect of the lead. The intelligent power module in the related art will design components such as separation grooves between the wiring position and the wire bonding position of the boost diode to prevent the solder from the chip welding area from flowing to the lead connection area. It is understandable that the provision of through holes and separation grooves will increase the production cost of the intelligent power module.

[0029] To solve the above problems, some embodiments of the present disclosure provide an intelligent power module 100, in which the bootstrap chip of the intelligent power module 100 is a P-substrate boost diode. The bootstrap chip is no longer provided on the first pin. The high-side driver chip supply voltage pin (i.e., the second pin) extends toward the side where the first pin is located to construct a bootstrap pad. The P substrate of the bootstrap chip is soldered to the bootstrap pad of the second pin, and the N pole of the bootstrap chip is connected to the first pin through a lead.

[0030] In this way, the bootstrap chip is located on the side of the first pin that is closer to the second pin. Compared with related art, the soldering position of the bootstrap chip is closer to the center of the intelligent power module 100, thereby reducing the possibility of delamination between the bootstrap chip and the frame, and improving the robustness and reliability of the intelligent power module 100.

[0031] Furthermore, the intelligent power module 100 according to some embodiments of the present disclosure can eliminate the need for a through hole and a groove on the first pin, thereby reducing the production cost of the intelligent power module 100 .

[0032] The following describes an intelligent power module (IPM) 100 according to some embodiments of the present disclosure with reference to Figures 1 to 5. The intelligent power module 100 according to some embodiments of the present disclosure can be applied to electronic devices. For example, the intelligent power module 100 can be applied to vehicle engine control systems, uninterruptible power supply (UPS) systems, inverters, solar and wind power systems, and control systems for motors and power supplies in household appliances.

[0033] In some embodiments, the intelligent power module 100 may include a substrate 1, which is configured to provide mounting locations for various components of the intelligent power module 100. The substrate 1 may also have a heat dissipation function to improve the heat dissipation efficiency of various chips (e.g., power chips, driver chips, bootstrap chips, etc.) on the intelligent power module 100. For example, the substrate 1 may be a ceramic substrate.

[0034] 1 and 3 , the intelligent power module 100 includes a driving pad 2, which may be disposed on a substrate 1. The driving pad 2 is configured to provide a soldering location for a driver chip on the intelligent power module 100 to ensure the reliability of the driver chip's placement on the intelligent power module 100.

[0035] It's important to note that a driver chip is an integrated circuit specifically designed to control and drive electronic devices. It receives instructions and signals and provides the necessary voltage, current, and signal to enable the controlled device to operate as intended. Driver chips perform functions such as control signal conversion and amplification, power supply and current drive, interface protocol support, and protection.

[0036] Driver chips integrate circuit functions and control logic, enabling control and management of external devices. They offer various interfaces and protocols to accommodate different types of devices and applications. The design and functionality of driver chips vary depending on the application scenario. For example, driver chips can be motor driver chips, light-emitting diode (LED) driver chips, display chips, and more.

[0037] It should be noted that in some embodiments of the present disclosure, the intelligent power module 100 includes edge positions and intermediate positions. For example, the intermediate position of the intelligent power module 100 can be understood as a position where the distance between a component on the intelligent power module 100 and any edge of the intelligent power module 100 is greater than a preset distance. The intermediate position here is relative to the edge position and includes, but is not limited to, the center position of the intelligent power module 100.

[0038] In some embodiments, the driving pad 2 includes a first sub-pad 201 (e.g., a high-side driving pad), and the first sub-pad 201 is disposed in the middle of the intelligent power module 100. For example, the distance between the first sub-pad 201 and any edge of the intelligent power module 100 is greater than a first preset distance.

[0039] Taking Figure 1 as an example, the intelligent power module 100 includes four edges: a first edge 100A, a second edge 100B, a third edge 100C, and a fourth edge 100D. The first edge 100A and the fourth edge 100D are arranged opposite each other in a first direction, while the second edge 100B and the third edge 100C are arranged opposite each other in a second direction. The third edge 100C and the second edge 100B are arranged opposite each other in the second direction. It should be noted that the first direction and the second direction are perpendicular to each other.

[0040] The first sub-pad 201 is disposed on the intelligent power module 100 and is spaced apart from the first edge 100A by a first distance. Here, the first distance refers to the distance between the first sub-pad 201 near the first edge 100A and the first edge 100A in the first direction, and the first distance is greater than the first predetermined distance.

[0041] The first sub-pad 201 is further spaced apart from the second edge 100B by a second distance. Here, the second distance refers to the distance between the first sub-pad 201 near the second edge 100B and the second edge 100B in the second direction, and the second distance is greater than the first preset distance.

[0042] In some embodiments, the driver chip of the intelligent power module 100 includes a first sub-chip 2011 (e.g., a high-voltage driver chip). The first sub-chip 2011 can constitute the basic structure of the intelligent power module 100, thereby ensuring the stable operation of the intelligent power module 100. For example, the first sub-chip 2011 is configured to convert low-level signals into high-voltage outputs, thereby achieving control of high-voltage devices.

[0043] In some embodiments, the first sub-chip 2011 is disposed on the first sub-pad 201. In this way, the first sub-chip 2011 can be disposed in the middle of the intelligent power module 100, reducing the impact of stress and thermal stress changes at the edge of the intelligent power module 100 on the first sub-chip 2011, thereby facilitating improved reliability of the first sub-chip 2011.

[0044] In some embodiments, the first sub-chip 2011 can be positioned in the middle of the first sub-pad 201. This improves the connection reliability between the first sub-chip 2011 and the first sub-pad 201, thereby further improving the reliability of the first sub-chip 2011. In some embodiments, the first preset distance can range from 0.8 cm, 1 cm, 1.2 cm, etc. In this way, the first sub-chip 2011 can be positioned in the middle of the intelligent power module 100, thereby improving the reliability of the first sub-chip 2011.

[0045] In some embodiments, the driving pad 2 further includes a second sub-pad 202 (e.g., a low-voltage side driving pad). Referring to FIG1 , the second sub-pad 202 is disposed on one side of the first sub-pad 201 in the second direction. For example, in the second direction, the second sub-pad 202 is located on a side of the first sub-pad 201 away from the second edge 100B.

[0046] Similar to the first sub-pad 201, the second sub-pad 202 may also be disposed in the middle of the smart power module 100. For example, the distance between the second sub-pad 202 and any edge of the smart power module 100 is greater than a second preset distance.

[0047] For example, the second sub-pad 202 is disposed on the intelligent power module 100 and is spaced apart from the first edge 100A by a third distance. Here, the third distance refers to the distance between the second sub-pad 202 near the first edge 100A and the first edge 100A in the first direction, and the third distance is greater than the second predetermined distance.

[0048] The second sub-pad 202 is further spaced apart from the third edge 100C by a fourth distance, which is greater than the second preset distance.

[0049] In some embodiments, the driver chip of the intelligent power module 100 further includes a second sub-chip 2021 (e.g., a low-voltage driver chip), which is disposed on the second sub-pad 202. Thus, the second sub-chip 2021 can be disposed in the middle of the intelligent power module 100, reducing the impact of stress and thermal stress changes at the edge of the intelligent power module 100 on the second sub-chip 2021, thereby improving the reliability of the second sub-chip 2021.

[0050] In some embodiments, the second sub-chip 2021 can be positioned in the middle of the second sub-pad 202. This improves the connection reliability between the second sub-chip 2021 and the second sub-pad 202, thereby further improving the reliability of the first sub-chip 2011. In some embodiments, the second preset distance is 0.8 cm, 1 cm, 1.2 cm, etc. In this way, the second sub-chip 2021 can be positioned in the middle of the intelligent power module 100, thereby improving the reliability of the second sub-chip 2021.

[0051] In summary, since the first sub-pad 201 and the second sub-pad 202 are arranged in the middle position of the intelligent power module 100, and the first sub-chip 2011 is arranged on the first sub-pad 201, and the second sub-chip 2021 is arranged on the second sub-pad 202, the first sub-chip 2011 and the second sub-chip 2021 can operate continuously and stably.

[0052] In some embodiments, the intelligent power module 100 further includes at least one first pin 3 (eg, a high-side driver floating supply voltage pin), and the first pin 3 is configured to be coupled to the high-side driver floating supply voltage.

[0053] In some embodiments, the first pin 3 is spaced apart from the first sub-pad 201 in the first direction. That is, the first pin 3 does not contact the first sub-pad 201. For example, in the first direction, the first pin 3 is located on a side of the first sub-pad 201 that is close to the first edge 100A, and the first pin 3 (e.g., one end) is located at the first edge 100A. This facilitates coupling of the intelligent power module 100 with external circuits (e.g., a high-side driver floating supply voltage).

[0054] In some embodiments, the intelligent power module 100 further includes a second pin 4 (e.g., a high-side driver chip supply voltage pin), with at least a portion of the second pin 4 spaced apart in the first direction between the first sub-pad 201 and the first pin 3. That is, the second pin 4 does not contact the first sub-pad 201, nor does the second pin 4 contact the first pin 3. The second pin 4 is configured to be coupled to the high-side driver chip supply voltage.

[0055] In some embodiments of the present disclosure, the first pin 3 and the first sub-pad 201 are spaced apart in the first direction, and at least a portion of the second pin 4 is spaced apart in the first direction between the first sub-pad 201 and the first pin 3. This not only improves the structural compactness of the first pin 3, the second pin 4, and the first sub-pad 201, but also makes the first pin 3, the second pin 4, and the first sub-pad 201 independent of each other in the intelligent power module 100, thereby reducing the possibility of short circuits in the intelligent power module 100, improving the reliability of circuit connections in the intelligent power module 100, and enabling the intelligent power module 100 to operate stably.

[0056] In some embodiments, the second lead 4 is disposed along at least a portion of the periphery of the first sub-pad 201. The first sub-pad 201 includes a first portion of the periphery, the first portion of the periphery facing the second edge 100B and extending along the first direction.

[0057] The first sub-pad 201 further includes a second portion of the periphery, the second portion of the periphery faces the third edge 100C and extends along the first direction. The first portion of the periphery and the second portion of the periphery are disposed opposite to each other in the second direction.

[0058] The first sub-pad 201 further includes a third portion of the periphery, the third portion of the periphery faces the first edge 100A and extends along the second direction, and the third portion of the periphery is connected between the first portion of the periphery and the second portion of the periphery.

[0059] 1 , the second lead 4 includes a body portion 41 disposed between the first sub-pad 201 and the first lead 3 in the first direction. The body portion 41 extends along a third portion of the periphery of the first sub-pad 201 in the second direction.

[0060] The second lead 4 further includes a first extension portion 42 disposed at one end of the body portion 41 close to the second edge 100B. The first extension portion 42 extends along a first portion of the periphery of the first sub-pad 201 and toward the second edge 100B.

[0061] Second lead 4 further includes second extension 43, which is disposed at one end of body 41 near third edge 100C and opposite first extension 42 in the second direction. Second extension 43 extends along the second portion of the periphery of first sub-pad 201 toward first edge 100A.

[0062] In this way, the first extension portion 42 and the second extension portion 43 of the second pin 4 can be extended toward the edge of the intelligent power module 100, thereby facilitating coupling of the second pin 4 with an external circuit (eg, a high-side driver chip supply voltage).

[0063] In some embodiments, the intelligent power module 100 further includes at least one bootstrap pad 401 , which is connected to the second pin 4 . For example, the bootstrap pad 401 is disposed on the body 41 of the second pin 4 .

[0064] 1 , the at least one bootstrap pad 401 includes three bootstrap pads 401. The three bootstrap pads 401 are respectively disposed on a side of the second pin 4 close to the first pin 3, and the three bootstrap pads 401 are spaced apart along the second direction.

[0065] Thus, the basic structure of the intelligent power module 100 can be formed by providing three bootstrap pads 401 on the second pin 4. In addition, the three bootstrap pads 401 are spaced apart in the second direction, which ensures that the three bootstrap pads 401 are independent of each other.

[0066] In some embodiments, the intelligent power module 100 further includes at least one bootstrap chip 5 . The bootstrap chip 5 is disposed on the bootstrap pad 401 , and the bootstrap chip 5 is coupled to the first pin 3 .

[0067] Compared with the method of setting the bootstrap chip 5 at the edge position of the intelligent power module 100 in the related art, the intelligent power module 100 in some embodiments of the present disclosure sets the bootstrap chip 5 on the bootstrap pad 401 on the second pin 4, so that the setting position of the bootstrap chip 5 is closer to the middle position of the intelligent power module 100.

[0068] In this way, the possibility of delamination between the bootstrap chip 5 and the frame can be reduced, which is conducive to improving the structural reliability of the bootstrap chip 5 on the intelligent power module 100, and improving the robustness and reliability of the bootstrap chip 5 in the intelligent power module 100. That is, it improves the ability of the intelligent power module 100 to maintain its own functional stable operation when facing changes in the internal structure or external environment.

[0069] In some embodiments, the bootstrap chip 5 may be disposed in the middle of the bootstrap pad 401 . This can improve the connection reliability between the bootstrap chip 5 and the bootstrap pad 401 , thereby further improving the robustness of the bootstrap chip 5 .

[0070] In some embodiments, the at least one bootstrap chip 5 includes three bootstrap chips 5 , and the three bootstrap chips 5 are respectively disposed corresponding to the three bootstrap pads 401 .

[0071] In some embodiments of the present disclosure, three bootstrap chips 5 are provided to meet the operational requirements of the intelligent power module 100. By arranging the three bootstrap chips 5 in correspondence with the three bootstrap pads 401 spaced apart along the second direction, the three bootstrap chips 5 are advantageously independently arranged, thereby meeting the requirements for the arrangement of the bootstrap chips 5 in the intelligent power module 100 and improving the reliability of the arrangement of the bootstrap chips 5 in the intelligent power module 100.

[0072] 1 and 3 , the second pin 4 is at least partially protruded in the first direction toward a side close to the first pin 3 to form a bootstrap pad 401. For example, at least a portion of the body 41 of the second pin 4 is protruded toward the first pin 3 to form the bootstrap pad 401.

[0073] In this way, the bootstrap pad 401 can occupy part of the space of the second pin 4. On the one hand, the area of ​​the bootstrap pad 401 can be increased to provide space for the bootstrap chip 5. On the other hand, it is beneficial to improve the structural compactness of the intelligent power module 100. On the other hand, the bootstrap pad 401 can be placed closer to the first sub-pad 201, which is beneficial to improve the robustness of the bootstrap chip 5 in the intelligent power module 100.

[0074] In addition, placing the bootstrap pad 401 on the side of the second pin 4 close to the first pin 3 can also reduce the impact of setting the bootstrap chip 5 on the second pin 4 on the first sub-pad 201, so that the area and shape of the first sub-pad 201 can remain unchanged, thereby ensuring the structural reliability of the first sub-pad 201 and the first sub-chip 2011.

[0075] It is understood that the provision of the bootstrap pad 401 provides a stable and reliable placement location for the bootstrap chip 5. Compared to the related art method of placing the bootstrap chip 5 on the first pin 3, placing the bootstrap chip 5 behind the bootstrap pad 401 allows the bootstrap chip 5 to be located between the first sub-pad 201 and the first pin 3. In other words, the bootstrap chip 5 is located on the side of the first pin 3 close to the first sub-pad 201, thereby allowing the bootstrap chip 5 to be placed near the center of the intelligent power module 100. This improves the robustness of the bootstrap chip 5 in the intelligent power module 100.

[0076] 4 , the bootstrap chip 5 includes a P-type anode layer 502 , which is made of a P-type semiconductor material and is soldered to the bootstrap pad 401 .

[0077] In some embodiments, the bootstrap chip 5 further includes an N-type cathode layer 503 , which is made of an N-type semiconductor material and is disposed on a side of the P-type anode layer 502 facing away from the bootstrap pad 401 .

[0078] In this way, the P-type anode layer 502 is connected to the N-type cathode layer 503, thereby forming a bootstrap chip 5 with a P-type semiconductor material as a substrate in the intelligent power module 100. In addition, the N-type cathode layer 503 is arranged on the side of the P-type anode layer 502 facing away from the frame 501, which can prevent the N-type cathode layer 503 from coupling with the bootstrap pad 401.

[0079] In some embodiments, the intelligent power module 100 further includes a frame 501, and the bootstrap chip 5 is disposed on the frame 501. For example, the P-type anode layer 502 can be disposed on the frame 501 and welded to the frame 501. In this way, the bootstrap chip 5 can be connected to the bootstrap pad 401 through the frame 501, thereby implementing the placement of the bootstrap chip 5 in the intelligent power module 100.

[0080] It should be noted that, since the bootstrap pad 401 is connected to the second pin 4, the bootstrap chip 5 can be connected to the second pin 4 via the bootstrap pad 401, and thus can be coupled to the high-side driver chip supply voltage via the second pin 4. This ensures stable operation of the intelligent power module 100 and eliminates the need for wires between the bootstrap chip 5 and the second pin 4, thereby simplifying the structure of the intelligent power module 100 and improving the production efficiency of the intelligent power module 100.

[0081] Furthermore, because the bootstrap chip 5 uses a P-type semiconductor material as its substrate, the P-substrate of the bootstrap chip 5 is disposed on the bootstrap pad 401 formed by the second pin 4, and the N-type cathode layer 503 of the bootstrap chip 5 is coupled to the first pin 3 via a wire. Therefore, the soldering process between the P-substrate of the bootstrap chip 5 and the bootstrap pad 401 does not affect the soldering process of the wires on the N-type cathode layer 503. Furthermore, because wires do not need to be soldered to the second pin 4 to connect to the first sub-chip 2011, a separation groove is not required on the second pin 4. This reduces the overall production cost of the intelligent power module 100.

[0082] In some embodiments, the intelligent power module 100 further includes a conductive layer 505 disposed between the frame 501 and the P-type anode layer 502. For example, the conductive layer 505 can be a silver paste layer, or a layer of copper, gold, aluminum, zinc, or tin. This reduces the contact resistance between the P-type anode layer 502 and the frame 501, thereby improving the conductivity of the bootstrap chip 5 in the intelligent power module 100.

[0083] Referring to Figure 4 , the intelligent power module 100 further includes a resistor 504, which is disposed on the side of the N-type cathode layer 503 facing away from the P-type anode layer 502. Resistor 504 can limit current, change operating conditions, influence voltage characteristics, and improve stability within the bootstrap chip 5. The presence of resistor 504 can improve the operational reliability of the bootstrap chip 5 within the intelligent power module 100.

[0084] For example, after a PN junction is formed between the P-type anode layer 502 and the N-type cathode layer 503 , the resistor 504 may be integrated and arranged on a side of the N-type cathode layer 503 away from the P-type anode layer 502 .

[0085] In some embodiments, referring to Figures 1 and 3 , the first pin 3 is disposed on the substrate 1, and the surface of the first pin 3 facing away from the substrate 1 is flat. That is, the surface of the first pin 3 facing away from the substrate 1 is continuous and flat. No through-hole is defined on the end of the first pin 3 facing away from the bootstrap chip 5 in the first direction, and no groove is defined on the surface of the first pin 3 facing away from the substrate 1 to separate the first pin 3 into a chip bonding area and a lead connection area.

[0086] It is understood that in some embodiments of the present disclosure, the bootstrap chip 5 uses a P-type semiconductor material as a substrate, and the bootstrap chip 5 is arranged on the second pin 4. Since the bootstrap chip 5 is independently arranged from the first pin 3, the overflow generated during the soldering process of the bootstrap chip 5 with the second pin 4 will not affect the pin setting on the first pin 3, and there is no need to provide a separation groove on the first pin 3 to separate the overflowed solder. In addition, since the bootstrap chip 5 is provided near the middle position of the intelligent power module 100, there is no need to provide a through hole on the first pin 3 in the manufacturing process of the intelligent power module 100. That is, the surface of the first pin 3 is flat, which can reduce the production cost of the intelligent power module 100 and improve the structural reliability of the intelligent power module 100.

[0087] In some embodiments, the first pin 3 is configured with a first avoidance portion 6, which is configured to avoid the bootstrap pad 401. It is understood that, under the premise of ensuring the reliability of the installation of the first pin 3, the first avoidance portion 6 is provided on the first pin 3 to provide a space for the bootstrap pad 401, thereby facilitating the installation of the bootstrap chip 5.

[0088] In addition, the provision of the first avoidance portion 6 can further improve the structural compactness of the first pin 3 , the bootstrap pad 401 and the first sub-pad 201 , thereby facilitating the improvement of the structural compactness of the intelligent power module 100 .

[0089] Correspondingly, a second avoiding portion 12 is formed between two adjacent bootstrap pads 401 among the three bootstrap pads 401 on the second pin 4 . The second avoiding portion 12 is configured to avoid the first pin 3 .

[0090] In some embodiments, referring to FIG1 , the at least one first pin 3 includes three first pins 3 , and the three first pins 3 are spaced apart along the second direction in the intelligent power module 100 . The three first pins 3 correspond to the U phase, V phase, and W phase of the high-side driver suspension power supply voltage, respectively. The U phase, V phase, and W phase of the high-side driver suspension power supply voltage correspond to V in FIG5 , respectively. BU (3) V BV (5) V BW (7).

[0091] It should be noted that such a setting not only makes the first pin 3 meet the setting requirements of the intelligent power module 100, but also ensures the structural independence of the three first pins 3 on the intelligent power module 100, thereby ensuring the reliability of the connection between the three first pins 3 and the external circuit.

[0092] In some embodiments, at least a portion of any one of the three first pins 3 is provided with a first avoidance portion 6 , and the three bootstrap pads 401 are respectively provided corresponding to the first avoidance portions 6 on the three first pins 3 .

[0093] It should be noted that any one of the three first pins 3 can be provided with a first avoidance portion 6 only at the position where the bootstrap pad 401 needs to be avoided. This is conducive to reducing the space occupied by the first avoidance portion 6 in the first pin 3, which not only enables the first pin 3 to avoid the bootstrap pad 401, but also increases the area of ​​the first pin 3, thereby improving the connection reliability between the first pin 3 and the lead.

[0094] In some embodiments, at least portions of the three first pins 3 extend into the second avoiding portion 12 along the first direction.

[0095] In some embodiments, the second relief portion 12 includes a first sub-relief portion 121 and a second sub-relief portion 122. A first sub-relief portion 121 and a second sub-relief portion 122 are formed between two adjacent bootstrap pads 401 of the three bootstrap pads 401. For example, referring to FIG2 , the first sub-relief portion 121 and the second sub-relief portion 122 are configured as grooves, and the three bootstrap pads 401 are respectively a first pad 4011, a second pad 4012, and a third pad 4013. The first pad 4011, the second pad 4012, and the body 41 of the second pin 4 collectively constitute the first sub-relief portion 121, and the second pad 4012, the third pad 4013, and the body 41 of the second pin 4 collectively constitute the second sub-relief portion 122.

[0096] In some embodiments, the three first pins 3 are respectively a first sub-pin 31, a second sub-pin 32, and a third sub-pin 33. At least a portion of the first sub-pin 31 and at least a portion of the second sub-pin 32 are located in the first sub-avoidance portion 121 and are spaced apart from the first sub-avoidance portion 121. At least a portion of the third sub-pin 33 is located in the second sub-avoidance portion 122 and is spaced apart from the second sub-avoidance portion 122.

[0097] It should be noted that the separation of A and B here means that A and B do not contact each other, and there is a gap between A and B. It can be understood that the provision of the second avoidance portion 12 is conducive to improving the structural compactness between the first pin 3 and the bootstrap pad 401, thereby facilitating the miniaturization design of the intelligent power module 100.

[0098] Of course, in other embodiments, at least a portion of the second sub-pin 32 may also be located in the second sub-avoidance portion 122. The locations of the first sub-pin 31, the second sub-pin 32, and the third sub-pin 33 may be flexibly arranged according to the internal structure of the intelligent power module 100.

[0099] It should be noted that the third sub-pin 33, the second sub-pin 32 and the first sub-pin 31 can be coupled to the U phase, V phase and W phase of the high-side drive floating power supply voltage in sequence. Of course, they can also be coupled to the U phase, V phase and W phase of the high-side drive floating power supply voltage in other orders. The present disclosure does not impose any restrictions on this.

[0100] In some embodiments, referring to FIG. 1 and FIG. 3 , the intelligent power module 100 further includes a first electrical connection line 7 , which is connected between the N-type cathode layer 503 and the first pin 3 .

[0101] In this way, the N-type cathode layer 503 of the bootstrap chip 5 with a P-type semiconductor material as a substrate can be coupled to the high-side driving floating supply voltage, thereby ensuring the stable operation of the boost function of the intelligent power module 100.

[0102] In some embodiments, the intelligent power module 100 further includes a second electrical connection line 8 connected between the first pin 3 and the first sub-chip 2011. In this way, the first sub-chip 2011 can be coupled to the high-side driver floating supply voltage.

[0103] It should be noted that, since in some embodiments of the present disclosure, the welding position of the bootstrap chip 5 (i.e., the bootstrap pad 401) is separated from the first pin 3, even if solder overflows from the bootstrap chip 5 during the welding process, it will not affect the setting of the second electrical connection line 8 on the first pin 3. As a result, the connection reliability between the second electrical connection line 8 and the first pin 3 is improved, thereby improving the connection reliability between the first sub-chip 2011 and the first pin 3.

[0104] In some embodiments, referring to FIG3 , first pin 3 includes a first sub-pin portion 301 . One end of first sub-pin portion 301 is positioned near first edge 100A, and at least a portion of first sub-pin portion 301 extends along the second direction. First sub-pin portion 301 is configured to couple to a high-side driver floating supply voltage.

[0105] In some embodiments, the first sub-pin portion 301 and the bootstrap pad 401 are spaced apart in the first direction. This reduces the possibility of circuit connection errors caused by contact between the first sub-pin portion 301 and the bootstrap pad 401, thereby ensuring the connection reliability of the circuit in the intelligent power module 100.

[0106] In some embodiments, the first sub-pin portion 301 may be coupled to the N-type cathode layer 503 of the bootstrap chip 5 through the first electrical connection line 7 , thereby achieving coupling between the first pin 3 and the bootstrap chip 5 .

[0107] In some embodiments, the first lead 3 further includes a second sub-lead portion 302, which is connected to the first sub-lead portion 301 and extends along the first direction. For example, in the first direction, the second sub-lead portion 302 is disposed on a side of the first sub-lead portion 301 facing the second lead 4, and in the second direction, the second sub-lead portion 302 is located at an end of the first sub-lead portion 301 that is closer to the second edge 100B or closer to the third edge 100C.

[0108] In this way, the second sub-pin portion 302 is arranged toward one side of the second pin 4, and the second sub-pin portion 302 is located at one end of the first sub-pin portion 301 in the second direction, so that the second sub-pin portion 302 and the first sub-pin portion 301 can construct a first avoidance portion 6, thereby providing avoidance space for the bootstrap pad 401.

[0109] In some embodiments, the second sub-pin portion 302 is spaced apart from the bootstrap pad 401 in the second direction. This reduces the possibility of circuit connection errors caused by contact between the second sub-pin portion 302 and the bootstrap pad 401, thereby ensuring the connection reliability of the circuit in the intelligent power module 100.

[0110] In some embodiments, the second sub-pin portion 302 is coupled to the first sub-chip 2011 through the second electrical connection line 8 to achieve coupling between the first pin 3 and the first sub-chip 2011 .

[0111] In some embodiments, the second sub-pin portion 302 can be located within the second relief portion 12 formed by the bootstrap pad 401. For example, referring to Figures 2 and 3, the second sub-pin portion 302 of the first sub-pin 31 and the second sub-pin portion 302 of the second sub-pin 32 are located within the first sub-relief portion 121, and the second sub-pin portion 302 of the third sub-pin 33 is located within the second sub-relief portion 122. Thus, the provision of the second relief portion 12 allows the second sub-pin portion 302 to be avoided, facilitating the extension of the second sub-pin portion 302 relative to the first sub-pin portion 301 along the first direction, thereby improving the structural compactness of the intelligent power module 100 and facilitating the miniaturization of the intelligent power module 100.

[0112] In some embodiments, in the first direction, the second sub-pin portion 302 extends toward the first sub-pad 201. This shortens the distance between the second sub-pin portion 302 and the first sub-chip 2011, thereby shortening the length of the second electrical connection line 8 and reducing the production cost of the intelligent power module 100. Furthermore, this arrangement improves the convenience of connecting the second sub-pin portion 302 to the first sub-chip 2011 via the second electrical connection line 8, thereby improving the production efficiency of the intelligent power module 100. It also reduces the possibility of the second electrical connection line 8 contacting components other than the first sub-pin portion 301, thereby improving the reliability of the connection between the second sub-pin portion 302 and the first sub-chip 2011 and enhancing the robustness and reliability of the intelligent power module 100.

[0113] In some embodiments, the intelligent power module 100 further includes at least one third pin 9 (eg, a high-side driver floating ground pin). The third pin 9 is configured to be coupled to the high-side driver floating ground.

[0114] In some embodiments, the at least one third pin 9 includes three third pins 9, and the three third pins 9 are alternately arranged with the three first pins 3 in the second direction. The three third pins 9 are respectively coupled to the U phase, V phase, and W phase of the high-side driver suspension ground. The U phase, V phase, and W phase of the high-side driver suspension ground correspond to V in FIG. SU (2) V SV (4) V SW (6).

[0115] In this way, the basic structure of the intelligent power module 100 can be formed to ensure the stable operation of the functions of the intelligent power module 100.

[0116] In some embodiments, the shape of the third pin 9 on the intelligent power module 100 is adaptively changed according to the shape of the corresponding first pin 3 to improve the structural compactness of the intelligent power module 100 .

[0117] In some embodiments, a third avoiding portion 13 is configured between the third solder pad 4013 and the first extending portion 42 of the second pin 4 , and the third avoiding portion 13 can avoid at least one third pin 9 among the three third pins 9 .

[0118] In some embodiments, at least a portion of the sixth sub-pin 93 extends into the third avoiding portion 13 along the second direction.

[0119] In some embodiments, the third relief portion 13 is configured as a groove, and the three third pins 9 include a fourth sub-pin 91, a fifth sub-pin 92, and a sixth sub-pin 93. At least a portion of the fourth sub-pin 91 is disposed in the first sub-relief portion 121. At least a portion of the fifth sub-pin 92 is disposed in the second sub-relief portion 122. At least a portion of the sixth sub-pin 93 is disposed in the third relief portion 13.

[0120] It is understandable that the provision of the second avoidance portion 12 and the third avoidance portion 13 is conducive to improving the structural compactness between the third pin 9 , the bootstrap pad 401 and the second pin 4 , thereby facilitating the miniaturization design of the intelligent power module 100 .

[0121] It should be noted that the sixth sub-pin 93, the fifth sub-pin 92 and the fourth sub-pin 91 can be coupled to the U phase, V phase and W phase of the high-side drive floating ground in sequence. Of course, they can also be coupled to the U phase, V phase and W phase of the high-side drive floating ground in other orders. This disclosure does not limit this.

[0122] Of course, in some embodiments, at least part of the third sub-pin 33 may also be located in the third avoidance portion 13 , and the setting positions of the three first pins 3 and the three third pins 9 may be flexibly set according to the position of the intelligent power module 100 .

[0123] In some embodiments, referring to Figure 1, the intelligent power module 100 also includes a power pad 11, which is arranged on a side of the driving pad 2 away from the bootstrap pad 401 in the first direction. The power pad 11 is mainly configured to provide a welding position for the power chip on the intelligent power module 100 to ensure the reliability of the setting of the power chip on the intelligent power module 100.

[0124] In some embodiments, the power pad 11 may include at least one third sub-pad 1110 (eg, a high-side power pad).

[0125] In some embodiments, the power pad 11 further includes at least one fourth sub-pad 1130 (eg, a low-side power pad), and the third sub-pad 1110 and the fourth sub-pad 1130 are spaced apart in the second direction.

[0126] In some embodiments, the power chip of the intelligent power module 100 includes at least one third sub-chip 1120 (e.g., a high-voltage power chip), and the at least one third sub-chip 1120 is disposed on the third sub-pad 1110. Any of the at least one third sub-chip 1120 is coupled to the corresponding first sub-chip 2011.

[0127] In some embodiments, the power chip of the intelligent power module 100 further includes at least one fourth sub-chip 1140 (e.g., a low-voltage power chip), and the at least one fourth sub-chip 1140 is disposed on the fourth sub-pad 1130. Any of the at least one fourth sub-chip 1140 is coupled to the corresponding second sub-chip 2021.

[0128] In some embodiments, the at least one third sub-pad 1110 includes a third sub-pad 1110, the at least one third sub-chip 1120 includes three third sub-chips 1120, the three third sub-chips 1120 are respectively arranged on the one third sub-pad 1110, and the three third sub-chips 1120 are respectively coupled to the corresponding first sub-chip 2011.

[0129] The at least one fourth sub-pad 1130 includes three fourth sub-pads 1130, which are spaced apart in the second direction. The at least one fourth sub-chip 1140 includes three fourth sub-chips 1140, which are respectively arranged corresponding to the three fourth sub-pads 1130, and the three fourth sub-chips 1140 are respectively coupled to the corresponding second sub-chip 2021.

[0130] In some embodiments, the intelligent power module 100 further includes at least one fourth pin 10 (eg, a power-side pin), which is spaced apart and disposed on a side of the power pad 11 away from the driving pad 2 along the first direction.

[0131] For example, the intelligent power module 100 further includes a fourth edge 100D, which is disposed opposite the first edge 100A and connected to the second edge 100B and the third edge 100C, respectively. One end of the fourth pin 10 is disposed on the fourth edge 100D.

[0132] In some embodiments, the at least one fourth pin 10 includes a plurality of fourth pins 10, the plurality of fourth pins 10 are spaced apart on a side of the power pad 11 away from the driving pad 2 along the first direction, and the plurality of fourth pins 10 are spaced apart in the second direction. For example, the distance between any two adjacent fourth pins 10 in the plurality of fourth pins 10 can be substantially equal, but the present disclosure is not limited thereto.

[0133] The plurality of fourth pins 10 are respectively coupled to the corresponding fourth sub-chip 1140 or the third sub-chip 1120. In this way, the basic structure of the intelligent power module 100 can be formed, and the stable operation of the intelligent power module 100 can be ensured.

[0134] According to some embodiments of the present disclosure, the intelligent power module 100 can be applied to electronic devices. Electronic devices equipped with the intelligent power module 100 according to some embodiments of the present disclosure can not only improve the robustness and reliability of the product, but also reduce the production cost of the product.

[0135] In some embodiments of the present disclosure, the intelligent power module 100 includes, but is not limited to, a copper frame product, and a combination of a copper frame product and a heat sink. The copper frame includes, but is not limited to, a direct bonded copper (DBC) ceramic substrate, and the heat sink includes, but is not limited to, a copper heat sink. This improves the heat dissipation performance of the first sub-chip 2011 in the intelligent power module 100 during operation.

[0136] In some embodiments of the present disclosure, the frame of the intelligent power module 100 is partially plated with silver to reduce the contact resistance between the chip and the frame and improve the conductivity of the chip.

[0137] In some embodiments of the present disclosure, the intelligent power module 100 includes power chips such as an insulated-gate bipolar transistor (IGBT), a metal-oxide-semiconductor field-effect transistor (MOSFET), a fast recovery diode (FRD) and a boost diode, and the driver chips include but are not limited to a full-bridge driver chip, a half-bridge driver chip, a high-voltage driver chip and a low-voltage driver chip.

[0138] In some embodiments of the present disclosure, aluminum wires, aluminum ribbons, gold wires, copper wires, and other bonding wires are used inside the intelligent power module 100 to electrically connect components.

[0139] In some embodiments of the present disclosure, the welding materials used between the P-type anode layer 502 of the bootstrap chip 5 inside the intelligent power module 100 and the frame 501 include but are not limited to solder paste and silver paste, etc., which is conducive to forming a conductive layer, thereby reducing the contact resistance between the various structures inside the intelligent power module 100 and improving the coupling reliability of the intelligent power module 100.

[0140] It should be noted that any one of the technical solutions disclosed in the present disclosure can, to a certain extent, solve one or more of the above-mentioned technical problems and achieve certain disclosure purposes; multiple technical disclosures can also be combined into an overall solution to solve one or more of the above-mentioned technical problems and achieve certain disclosure purposes; some of the technical disclosures can also be selected to be combined into an overall solution, while adopting related technologies and inferior solutions, but the inferior trend can be compensated by the means disclosed in this technology, and the above-mentioned one or more technical problems can be solved to a certain extent as a whole and certain disclosure purposes can be achieved; each technical disclosure combined into a complete technical solution constitutes an organic and inseparable overall solution, which solves technical problems as a whole and achieves certain disclosure purposes.

[0141] Any technical disclosure in this disclosure, as well as the recombination of multiple technical disclosures, can form a complete technical solution and can solve one or more of the above-mentioned technical problems and achieve the purpose of disclosure. They all belong to the content of this disclosure and are the content that is directly and unambiguously determined based on the content of this disclosure.

[0142] Those skilled in the art will understand that the scope of the present disclosure is not limited to the above specific embodiments, and that certain elements of the embodiments may be modified and replaced without departing from the spirit of the present application. The scope of the present application is limited by the appended claims.

Claims

1. An intelligent power module, comprising: A driving pad, including a first sub-pad; At least one first pin, in a first direction, the at least one first pin is spaced apart from the first sub-pad, and the at least one first pin can be coupled to a high-side drive suspension supply voltage; A second pin, in the first direction, at least a portion of the second pin is spaced between the first sub-pad and the at least one first pin; the second pin is extended along at least a portion of the periphery of the driving pad, and the second pin can be coupled to a high-side driving chip power supply voltage; at least one bootstrap pad, the at least one bootstrap pad being connected to the second pin; as well as At least one bootstrap chip is disposed on the at least one bootstrap pad, and the at least one bootstrap chip is coupled to the at least one first pin.

2. The intelligent power module according to claim 1, wherein: Any one of the at least one bootstrap chip comprises: A P-type anode layer connected to the at least one bootstrap pad; and An N-type cathode layer is disposed on a side of the P-type anode layer away from the at least one bootstrap pad, and the N-type cathode layer is coupled to the at least one first pin.

3. The intelligent power module according to claim 2, wherein: Any of the bootstrap chips is a P-type substrate boost diode. 4 . The intelligent power module according to claim 2 , further comprising a resistor, wherein the resistor is integrated and arranged on a side of the N-type cathode layer away from the P-type anode layer. 5 . The intelligent power module according to claim 2 , further comprising a first electrical connection line connected between the at least one first pin and the N-type cathode layer.

6. The intelligent power module according to any one of claims 1 to 5, further comprising a substrate, wherein the at least one first pin is disposed on the substrate; The surface of one side of any one of the at least one first pins away from the substrate is flat; no through hole is provided at the end of any one of the first pins in the first direction away from the bootstrap chip, and no separation groove is provided on the surface of any one of the first pins to separate the first pin into a chip welding area and a lead connection area.

7. The intelligent power module according to any one of claims 1 to 6, wherein: In the first direction, at least a portion of the second pin is protruded toward the at least one first pin to construct the at least one bootstrap pad.

8. The intelligent power module according to any one of claims 1 to 7, wherein: The second pin comprises: A body portion extending along a second direction perpendicular to the first direction; the body portion is disposed between the first sub-pad and the at least one first pin; at least a portion of the body portion protrudes toward the at least one first pin to construct the at least one bootstrap pad; a first extending portion, disposed on one side of the main body in the second direction, and at least a portion of the first extending portion extends along the first direction; and The second extension portion is disposed on the other side of the main body portion in the second direction, and at least a portion of the second extension portion extends along the first direction. The second extension portion is opposite to the first extension portion.

9. The intelligent power module according to any one of claims 1 to 8, wherein: A first avoidance portion is formed on at least a portion of a side of any first pin of the at least one first pin close to a corresponding bootstrap pad of the at least one bootstrap pad, and the first avoidance portion can avoid the corresponding bootstrap pad.

10. The intelligent power module according to claim 9, further comprising a first sub-chip, wherein the first sub-chip is disposed on the first sub-pad, and the first sub-chip is coupled to the at least one first pin; wherein, Any one of the first pins comprises: a first sub-pin portion, wherein in the first direction, the first sub-pin portion is arranged opposite to the corresponding bootstrap pad; the first sub-pin portion is coupled to the high-side drive floating supply voltage, and the first sub-pin portion is coupled to the at least one bootstrap chip; and a second sub-pin portion, in the first direction, the second sub-pin portion is connected to the first sub-pin portion, in the second direction, the second sub-pin portion is located at one end of the first sub-pin portion close to the corresponding edge of the intelligent power module, and the second sub-pin portion and the corresponding bootstrap pad are arranged opposite to each other in the second direction; the second sub-pin portion is coupled to the first sub-chip; The first avoiding portion is constructed between the first sub-pin portion and the second sub-pin portion. 11 . The intelligent power module according to claim 10 , further comprising a second electrical connection line, wherein the second electrical connection line is connected between the second sub-pin portion of any one of the first pins and the first sub-chip.

12. The intelligent power module according to any one of claims 1 to 11, wherein: The at least one bootstrap pad includes three bootstrap pads, the three bootstrap pads are arranged on a side of the second pin close to the at least one first pin, and the three bootstrap pads are arranged in a second direction perpendicular to the first direction; The at least one bootstrap chip includes three bootstrap chips, and the three bootstrap chips are respectively arranged corresponding to the three bootstrap pads.

13. The intelligent power module according to claim 12, wherein: The at least one first pin includes three first pins, and the three first pins are arranged along the second direction; At least a portion of any one of the three first pins is provided with a first avoidance portion, and the three bootstrap pads are respectively provided corresponding to the first avoidance portions on the three first pins.

14. The intelligent power module according to claim 13, wherein: A second avoidance portion is constructed between two adjacent bootstrap pads among the three bootstrap pads, and the second avoidance portion can avoid at least a portion of the corresponding second pin among the three second pins.

15. The intelligent power module according to claim 14, wherein: The second avoidance portion includes a first sub-avoidance portion and a second sub-avoidance portion; the three bootstrap pads include a first pad, a second pad and a third pad, the first sub-avoidance portion is constructed between the first pad and the second pad, and the second sub-avoidance portion is constructed between the second pad and the third pad; The three second pins include a first sub-pin, a second sub-pin and a third sub-pin; at least part of the first sub-pin and at least part of the second sub-pin are arranged in the first sub-avoidance portion; at least part of the third sub-pin is arranged in the second sub-avoidance portion.

16. The intelligent power module according to claim 14 or 15, further comprising at least one third pin, wherein the at least one third pin is arranged on a side of the at least one bootstrap pad close to the at least one first pin, and any one of the at least one third pin is coupled to a high-side drive floating ground.

17. The intelligent power module according to claim 16, wherein: In the second direction, the three third pins and the three first pins are arranged alternately.

18. The intelligent power module according to claim 17, wherein: A third avoiding portion is constructed between the third solder pad and the first extending portion of the second pin, and the third avoiding portion can avoid at least one third pin among the three third pins.

19. The intelligent power module according to claim 18, wherein: The three third pins include a fourth sub-pin, a fifth sub-pin and a sixth sub-pin; At least a portion of the fourth sub-pin is disposed in the first sub-avoiding portion; at least a portion of the fifth sub-pin is disposed in the second sub-avoiding portion; and at least a portion of the sixth sub-pin is disposed in the third avoiding portion.

20. The intelligent power module according to any one of claims 1 to 19, wherein: The driving pad further includes a second sub-pad, and the second sub-pad and the first sub-pad are arranged along a second direction; the first direction is perpendicular to the second direction; Wherein, the intelligent power module further includes: A first sub-chip, disposed on the first sub-pad, the first sub-chip being coupled to the at least one first pin; and The second sub-chip is arranged on the second sub-pad.

21. The intelligent power module according to claim 20, further comprising a power pad, wherein the power pad is disposed on a side of the driving pad away from the at least one first pin; the power pad comprises: at least one third sub-pad; as well as The at least one fourth sub-pad, the at least one third sub-pad and the at least one fourth sub-pad are respectively arranged along a second direction perpendicular to the first direction.

22. The intelligent power module according to claim 21, further comprising: At least one third sub-chip, disposed on the at least one third sub-pad, the at least one third sub-chip being coupled to the first sub-chip; as well as At least one fourth sub-chip is disposed on the at least one fourth sub-pad, and the at least one fourth sub-chip is coupled to the second sub-chip.

23. The intelligent power module according to claim 22, wherein: The at least one third sub-pad includes one third sub-pad, the at least one third sub-chip includes three third sub-chips, the three third sub-chips are respectively disposed on the one third sub-pad and arranged along the second direction; the three third sub-chips are respectively coupled to the first sub-chip; The at least one fourth sub-pad includes three fourth sub-pads, and the three fourth sub-pads are arranged in the second direction; the at least one fourth sub-chip includes three fourth sub-chips, and the three fourth sub-chips are respectively arranged corresponding to the three fourth sub-pads, and the three fourth sub-chips are respectively coupled to the second sub-chip.

24. The intelligent power module according to claim 22 or 23 further includes a plurality of fourth pins, wherein the plurality of fourth pins are arranged on a side of the power pad away from the driving pad along the first direction, and the plurality of fourth pins are arranged along the second direction; a first part of the plurality of fourth pins is coupled to the at least one third sub-chip, and a second part of the plurality of fourth pins is coupled to the at least one fourth sub-chip.

25. An electronic device comprising: An intelligent power module as claimed in any one of claims 1 to 24.

Images