Method for increasing a wafer fill factor and for universal usability of μled basic structures

Abstract

The invention relates to a method for fabricating a plurality of optoelectronic components, comprising the steps of: producing a plurality of volume emitting µLEDs each having a first emission surface on a wafer, which are arranged at a first distance from one another on the wafer, the µLEDs comprising a semiconductor layer stack composed of at least a first layer of a first conductivity type and a second layer of a second conductivity type, and an active region arranged between the first and the second layers, an electrically conductive first contact layer on the first layer, and an electrically conductive second contact layer on the second layer; transferring a subset of the µLEDs from the wafer to a temporary carrier, in such a way that at least two µLEDs of the subset of µLEDs are arranged at a second distance from one another on the temporary carrier, said second distance being greater than the first distance; producing a structured dielectric material layer on the temporary carrier, this layer surrounding at least lateral faces of the subset of µLEDs with touching contact and having a second emission surface for light emitted by the first emission surface, the second emission surface being larger than the first emission surface, in particular by at least a factor of 1.1; and producing a second contact structure on the structured dielectric material layer, the second contact structure making contact with the electrically conductive second contact layer of each of the µLEDs.

Description

[0001] METHOD FOR WAFER FILL FACTOR INCREASE AND FOR UNIVERSAL APPLICATION OF pLED BASE STRUCTURES

[0002] This application claims priority from German patent application No. 10 2023 133 304 . 6 of November 28, 2023, the disclosure of which is hereby incorporated by reference into this application.

[0003] The present invention relates to a method for producing a plurality of optoelectronic components, in particular encapsulated p-LEDs, an intermediate product comprising a plurality of optoelectronic components, an optoelectronic component, an optoelectronic package comprising an optoelectronic component and an arrangement, in particular a display, comprising a plurality of optoelectronic components.

[0004] BACKGROUND pLEDs are optoelectronic components that have a lateral dimension ranging from a few pm to about 40 pm. Such components offer a wide variety of different applications, including, but not limited to, displays.

[0005] The different pLED applications require different designs or architectures of the pLEDs. For example, a different size of the pLEDs can be advantageous for different applications or due to different further processing or finishing processes (5, 10, 15, 30, 40, . . . pm). A different contact geometry of the pLEDs can also be advantageous for different applications or due to different further processing or finishing processes. Example contact geometries can be: horizontal (both electrical contacts on one side of the pLED) and vertical (electrical contacts on opposite sides of the pLED). In addition, a different shape of the pLEDs may be desired for different applications or due to different further processing or finishing processes, for example in order to achieve a different far-field emission of the light emitted by the pLED.

[0006] These different applications have so far required individual adaptation of the pLEDs at wafer level, i.e. as part of the front-end processing of the pLEDs. This is often associated with a high level of complexity and high costs, since, depending on the application and design of the pLEDs, expensive semiconductor materials that are required to grow the pLEDs often have to be removed again in order to create contact structures, a desired shape or a desired distance between the pLEDs. In particular, this can lead to a relatively low wafer fill factor, i.e. the ratio between the wafer area and the resulting pLEDs can be relatively low. In addition, depending on the application and design of the pLEDs, e.g. at wafer level, long cycle times can result, since an individual product can lead to a high level of individual complexity in production.

[0007] There is therefore a need to provide an improved method for producing optoelectronic components and an improved optoelectronic component by means of which at least some of the problems mentioned can be overcome.

[0008] SUMMARY OF THE INVENTION

[0009] This need is met by the subject matter of the independent patent claims. Further developments and embodiments of the proposed principle are specified in the subclaims.

[0010] To solve the problem, the inventors propose providing small (e.g. edge length of approx. 5 pm), standardized, unpackaged, vertically addressable and volume-emitting pLED dies that can be manufactured densely packed at the wafer level. These standardized pLED dies are then further processed in a subsequent step on a further temporary intermediate carrier in a product-specific manner and adapted to the requirements of the final product with regard to shape, size and contact structure / geometry. These adapted pLED dies or pLEDs can then, for example, be used by the customer in the final product.

[0011] Since the main effort in manufacturing the pLEDs, for example approximately 6-14 lithography layers for producing the pLED dies, can be standardized and a maximum wafer fill factor can be aimed for, the costs and complexity of manufacturing the dies can be reduced to a minimum. In addition, specific adaptations can be implemented more easily on the basis of a standardized and simplest starting product. In addition, the qualification processes required for specific adaptations can be simplified because essential qualifications may already have been carried out for the starting product, allowing a faster market launch of an individual product.

[0012] Examples of product-specific adaptation can be:

[0013] Size adjustment by dielectric embedding of the pLED;

[0014] Combining several pLEDs (multicore pLED) for optimal adjustment of the current density / luminance;

[0015] Adjustment of the contacting of the pLED (vertical or horizontal).

[0016] In particular, it may be desirable to adapt the size of the pLEDs in terms of their external dimensions, but not in terms of the volume of the semiconductor material used, in order to enable easier handling of the pLEDs and at the same time keep the costs of the pLEDs as low as possible. For example, the size of a small, standardized and therefore inexpensively manufactured pLED can be artificially increased using a relatively inexpensive material in order to be able to provide the small, standardized and therefore inexpensively manufactured pLED for applications and, for example, assembly processes for which such a small size of the pLEDs would not necessarily be necessary or possible. One prerequisite that must be met, however, is that these small, standardized and therefore inexpensively manufactured pLEDs provide a luminance that is sufficient for the intended application compared to a larger LED.According to a first aspect, a method for producing a plurality of optoelectronic components, in particular encapsulated p-LEDs, is proposed. The method comprises the following steps:

[0017] Producing a plurality of volume-emitting pLEDs, each having a first emission surface, on a wafer, which are arranged at a first distance from one another on the wafer, the pLEDs comprising: a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and the second layer; an electrically conductive first contact layer on the first layer; and an electrically conductive second contact layer on the second layer;

[0018] Transferring a subset of the plurality of pLEDs from the wafer to a temporary carrier such that at least two pLEDs of the subset of pLEDs are arranged on the temporary carrier at a second distance from one another that is greater than the first distance;

[0019] Creating a structured dielectric material layer on the temporary carrier, which layer surrounds at least side surfaces of the subset of pLEDs in contact, and which has a second emission surface for light emitted by the first emission surface, wherein the second emission surface is larger than the first emission surface, in particular by at least a factor of 1.1 or by at least a factor of 1.5;

[0020] Creating a structured second contact structure on the structured dielectric material layer, wherein the structured second contact structure contacts the electrically conductive second contact layer of the pLEDs.

[0021] The term "emission surface" can in particular be understood as the outer surfaces of a corresponding element, via which light is emitted during operation of the optoelectronic components. In the case of pLEDs in the form of, for example, cube-shaped or cuboid-shaped elements, the first emission surface can be formed by at least 5 of the 6 existing outer surfaces of a pLED. The 6th outer surface, however, can be mirrored, for example, by a reflective contact layer. With regard to the structured dielectric material layer, the second emission surface can in particular also be formed by the outer surfaces of a contiguous region of the structured dielectric material layer, through which light generated by the pLED(s) is emitted outwards.

[0022] Instead of the term “emission surface”, the term “emission volume” can also be used. The emission volume can in particular refer to the volume of a body which is designed to emit light. A first emission volume can in particular refer to the pLEDs and to the volume of a pLED which is enclosed by the outer surfaces of the pLED. A second emission volume, on the other hand, can refer to contiguous regions of the structured dielectric material layer through which light generated by the pLED(s) is emitted outwards. In particular, the second emission volume can refer to the volume of a body which is enclosed by the outer surfaces of a contiguous region of the structured dielectric material layer.In terms of the issue volume, the second issue volume may be larger than the first issue volume, in particular by at least a factor of 1 . 1 or by at least a factor of 1 . 5 .

[0023] A subset of pLEDs that are transferred from the wafer to the temporary carrier can be understood as a true subset of the plurality of pLEDs, i.e. a number of pLEDs that is smaller than the number of the plurality of pLEDs. However, it is also possible for all of the plurality of pLEDs to be transferred to the temporary carrier, wherein the temporary carrier in such a case is larger than the wafer in order to enable at least two of the pLEDs to be arranged at a greater distance from one another on the temporary carrier than from the wafer.

[0024] The temporary carrier can, in particular, also be formed by a wafer on which the pLEDs, the structured dielectric material layer, the contact structure, and optionally further layers or elements are arranged or produced. The temporary carrier can, for example, be a carrier / wafer made of Si, SiO2, glass, sapphire, Ge, or GaAs.

[0025] In addition to touchingly surrounding side surfaces of the subset of pLEDs, the structured dielectric layer can also, at least in regions, touchingly cover an upper side of the pLEDs opposite the temporary carrier and / or an upper side of the pLEDs facing the temporary carrier.

[0026] The second distance with which at least two of the subset of pLEDs are arranged on the temporary carrier is greater than the first distance. In particular, the second distance is, for example, many times greater than the first distance. A distance which is many times greater can result in particular if, when lifting off the subset of the plurality of pLEDs, for example, only every 2nd, 3rd, 4th, 5th or other multiple pLED is lifted off the wafer and correspondingly deposited on the temporary carrier. A distance which is many times greater can, however, also result if the pLEDs of the subset of pLEDs are deposited at a desired second distance from one another by appropriately moving a transfer tool.

[0027] The fact that at least two of the subset of pLEDs are arranged on the temporary carrier at a second distance can be understood to mean that all pLEDs of the subset of pLEDs are arranged on the temporary carrier at the second distance, but can also be understood to mean that some pLEDs of the subset of pLEDs are arranged on the temporary carrier at the second distance, and other pLEDs are arranged at a different distance or different distances from one another. In particular, some pLEDs can be arranged more closely to one another on the temporary carrier, for example at the first distance or at a different distance that is smaller than the second distance, and some pLEDs can be arranged at the second distance from one another on the temporary carrier.

[0028] The step of producing the structured dielectric material layer may, in particular, comprise structuring in the sense of at least partially exposing the electrically conductive second contact layers of the pLEDs from the dielectric material layer. Additionally or alternatively, the step of producing the structured dielectric material layer may comprise structuring the dielectric material layer into individual, separate regions, wherein at least one of the subsets of the pLEDs is assigned to each separate region.

[0029] The step of producing the structured second contact structure on the structured dielectric material layer can either take place after the step of at least partially exposing the electrically conductive second contact layers of the pLEDs from the dielectric material layer or can take place after the step of structuring the dielectric material layer into individual, separate regions.

[0030] Furthermore, the step of creating the structured dielectric material layer may comprise structuring in the sense of creating through-openings through the dielectric material layer. The step of creating the structured second contact structure on the structured dielectric material layer may then comprise creating through-contacts in the through-openings.

[0031] The step of producing the structured dielectric material layer can additionally comprise structuring in the sense of shaping the outer shape of the optoelectronic components. For example, the structured dielectric material layer can shape at least some of the outer surface(s) of the final optoelectronic components. The step of producing the structured dielectric material layer can accordingly comprise shaping, for example, beveled or rounded side surfaces of the optoelectronic components.

[0032] According to some aspects, the structured dielectric material layer is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the plurality of pLEDs by at most 0.1. In particular, the material of the structured dielectric material layer and / or the material system from which the semiconductor layer stack of the plurality of pLEDs is made can be selected such that a refractive index difference between the materials of at most 0.1 results. The materials can in particular be refractive index-matched. For example, the pLEDs can be formed by a semiconductor material such as GaN, and the dielectric material layer can comprise Nb2O5, so that a corresponding refractive index jump of at most 0.1 results.

[0033] According to some aspects, the structured dielectric material layer projects beyond the pLEDs in a vertical direction perpendicular to the temporary carrier, in particular by at least 5% or at least 10% of the vertical extent of the pLEDs. In addition to this or alternatively, the structured dielectric material layer or regions of the structured dielectric material layer projects beyond the pLEDs in a lateral direction, in particular by at least 10% or at least 20% of the lateral extent of the pLEDs. In particular, the external dimensions of the final optoelectronic components can be substantially defined by the structured dielectric material layer or regions of the structured dielectric material layer. In this case, the structured dielectric material layer or...Regions of the structured dielectric material layer project vertically and / or lateral over correspondingly assigned pLEDs in order to increase the size of the small pLEDs according to their area of ​​application and existing processing methods using a cheap material.

[0034] According to some aspects, the step of producing the structured dielectric material layer comprises producing regions of the structured dielectric material layer such that a contiguous region of the structured dielectric material layer is assigned to at least one of the plurality of pLEDs. The contiguous region has a second emission surface for light emitted by the first emission surface, which is larger than the first emission surface, in particular by at least a factor of 1.1 or 1.5. For example, one or more pLEDs can be surrounded by a contiguous region of the structured dielectric material layer and form, for example, an optoelectronic component.In particular, a plurality of pLEDs can be surrounded by a contiguous region of the structured dielectric material layer, which are configured either to emit light of the same wavelength or light of different wavelengths. For example, optoelectronic components can be provided that comprise a plurality of pLEDs and are configured to emit either monochromatic light or light of different colors, such as red, green, and blue (RGB) or infrared, red, green, and blue (IRGB).

[0035] According to some aspects, the step of creating the structured dielectric material layer comprises at least partially exposing the electrically conductive second contact layers from the dielectric material layer.

[0036] According to some aspects, the step of producing the plurality of pLEDs comprises producing the semiconductor layer stack on a first holding structure. The first holding structure can be structured such that a support region of the first holding structure is assigned to each of the plurality of pLEDs. Furthermore, the first holding structure can comprise, in addition to the support regions, a first sacrificial layer that fills regions between the support regions of the first holding structure. The first holding structure can in particular be provided to enable / facilitate detachment / removal of the pLEDs from the wafer. The support regions can be formed by miniaturized pillars that are arranged between the pLEDs and the wafer. The first sacrificial layer, on the other hand, can be designed to be removable and can be removed in an etching step before the subset of pLEDs is transferred, so that the pLEDs are only in contact with the support regions.

[0037] According to some aspects, the step of transferring the subset of the plurality of pLEDs comprises placing the pLEDs on a second holding structure. The second holding structure can be structured such that at least one pLED of the subset of pLEDs is assigned a support region of the second holding structure. Furthermore, the second holding structure can comprise, in addition to the support regions, a second sacrificial layer which fills regions between the support regions of the second holding structure. The second holding structure can in particular be provided to enable / facilitate a detachment / removal of the optoelectronic components from the temporary carrier. The support regions can be formed by miniaturized pillars which are arranged between the optoelectronic components and the temporary carrier.The second sacrificial layer, however, can be designed to be removable and can be removed in an etching step before the optoelectronic components are lifted off, so that the optoelectronic components are only in contact with the support areas.

[0038] According to some aspects, the method further comprises a step of providing a first contact structure on the temporary carrier or the second holder structure, wherein regions of the structured first contact structure each contact the electrically conductive first contact layer of at least one of the pLEDs. In particular, the first and second contact structures can be provided in order to be able to apply a first and a second potential to the optoelectronic components for their operation.

[0039] According to some aspects, the step of producing the structured dielectric material layer and the step of producing the plurality of pLEDs take place in a front-end process, i.e. in particular at wafer level. The temporary carrier can in particular also be a wafer on which the structured dielectric material layer is produced. In particular, the step of producing the structured dielectric material layer and the step of producing the plurality of pLEDs can take place in the same production line, since the prerequisites required for the individual steps can be similar for both steps.

[0040] According to some aspects, the method additionally comprises providing a plurality of further volume-emitting pLEDs on the temporary carrier before the dielectric material layer is produced. The further volume-emitting pLEDs can in particular be pLEDs that are designed to emit light of a different wavelength. For example, optoelectronic components can be provided that comprise a plurality of pLEDs and that are designed to emit light of different colors, such as red, green and blue (RGB) or infrared, red, green and blue (IRGB).

[0041] According to some aspects, the method additionally comprises providing a plurality of vertically contactable optoelectronic sensors on the temporary carrier before the dielectric material layer is produced. The vertically contactable optoelectronic sensors can in particular be sensors that can, for example, detect light emitted by the pLEDs and reflected by an object. For example, the sensors can be infrared sensors in order to provide a proximity sensor, for example. Thus, for example, optoelectronic components can be provided that are designed not only to emit light, but also to detect light.

[0042] According to some aspects, the step of creating the structured second contact structure on the structured dielectric material layer comprises electrically contacting the further pLEDs and / or the optoelectronic sensors.

[0043] According to a further aspect, an intermediate product is proposed. The intermediate product can, in particular, be an intermediate product produced by a process according to at least some of the aforementioned aspects. Accordingly, the aspects already mentioned for the process can be applied to the intermediate product and vice versa.

[0044] The intermediate product comprises a plurality of volume-emitting pLEDs, each having a first emission surface, which are arranged at a distance from one another on a holding structure, in particular the second holding structure, on a temporary carrier. The pLEDs each comprise a semiconductor layer stack made of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and the second layer, an electrically conductive first contact layer on the first layer, and an electrically conductive second contact layer on the second layer.In addition, a structured dielectric material layer is provided which surrounds at least side surfaces of the pLEDs in a contacting manner and which has a second emission surface for light emitted by the first emission surface, wherein the second emission surface is larger than the first emission surface, in particular by at least a factor of 1.1 or 1.5. A structured second contact structure is further arranged on the structured dielectric material layer, wherein the structured second contact structure contacts the electrically conductive second contact layer of the pLEDs.

[0045] According to some aspects, the structured dielectric material layer is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the plurality of pLEDs by at most 0 . 1. In particular, the material of the structured dielectric material layer and / or the material system from which the semiconductor layer stack of the plurality of pLEDs is made can be selected such that a refractive index difference of at most 0 . 1 results between the materials. The materials can in particular be refractive index-matched.

[0046] According to some aspects, the structured dielectric material layer projects beyond the pLEDs in a vertical direction perpendicular to the temporary carrier, in particular by at least 5% or by at least 10% of the vertical extent of the pLEDs. In addition to this or alternatively, the structured dielectric material layer or regions of the structured dielectric material layer projects beyond the pLEDs in a lateral direction, in particular by at least 10% or by at least 20% of the lateral extent of the pLEDs. In particular, the outer dimensions of the structured dielectric material layer or regions of the structured dielectric material layer can essentially define the size of final optoelectronic components. In this case, the structured dielectric material layer or regions can essentially define the size of final optoelectronic components.Regions of the structured dielectric material layer project beyond correspondingly assigned pLEDs in vertical and / or lateral direction in order to increase the size of the small pLEDs according to their area of ​​application and existing processing methods with an inexpensive material.

[0047] According to some aspects, the structured dielectric material layer comprises regions to which at least one of the plurality of pLEDs is assigned a contiguous region of the structured dielectric material layer. The contiguous region has a second emission surface for light emitted by the first emission surface, which is larger than the first emission surface, in particular by at least a factor of 1.1 or 1.5. For example, one or more pLEDs can be surrounded by a contiguous region of the structured dielectric material layer.

[0048] According to some aspects, the holding structure or second holding structure is structured such that a support region of the second holding structure is assigned to at least one pLED of the subset of pLEDs. Furthermore, in addition to the support regions, the second holding structure can also comprise a sacrificial layer or second sacrificial layer that fills regions between the support regions of the second holding structure. The second holding structure can be provided in particular to enable / facilitate a detachment / removal of final optoelectronic components of the intermediate product from the temporary carrier. The support regions can be formed by miniaturized pillars that are arranged between the optoelectronic components and the temporary carrier.The second sacrificial layer, however, can be designed to be removable and can be removed in an etching step before the optoelectronic components are lifted off, so that the optoelectronic components are only in contact with the support areas.

[0049] According to some aspects, the intermediate product further comprises a first contact structure arranged on the temporary carrier and / or on the second holder structure, wherein regions of the structured first contact structure each contact the electrically conductive first contact layer of at least one of the pLEDs. In particular, the first and second contact structures can be provided in order to be able to apply a first and a second potential to the optoelectronic components or pLEDs for their operation.

[0050] According to some aspects, a contiguous region of the structured dielectric material layer is formed, which surrounds at least the side surfaces of at least two pLEDs in a contacting manner. The at least one contiguous region has a second emission surface for light emitted by the first emission surface, which is larger than the first emission surface, in particular by at least a factor of 1.5. The at least two pLEDs, which are assigned to a contiguous region of the structured dielectric material layer, can be connected in parallel by means of regions of the structured first and / or second contact structure, and can thus be controlled in parallel.Furthermore, the at least two pLEDs assigned to a contiguous region of the structured dielectric material layer can be arranged on the temporary carrier at a closer distance from one another than adjacent pLEDs assigned to different contiguous regions of the structured dielectric material layer. In particular, pLEDs assigned to a final optoelectronic component can be spaced more closely from one another and surrounded by a contiguous region of the structured dielectric material layer than adjacent pLEDs of different optoelectronic components.This can be particularly advantageous in order to provide at least partially optoelectronic components with an increased luminance, while maintaining the basic concept of the invention, namely to adapt the size, shape and / or contacting of the optoelectronic components individually by means of favorable materials and processes.

[0051] According to a further aspect, an optoelectronic component is proposed. The optoelectronic component can, in particular, be an optoelectronic component produced by a method according to at least some of the aforementioned aspects, or a part of the intermediate product according to at least some of the aforementioned aspects. Accordingly, the aspects already mentioned for the method and the intermediate product can be applied to the optoelectronic component and vice versa.

[0052] An optoelectronic component, in particular an encapsulated p-LED, comprises at least one volume-emitting pLED with a first emission surface. The at least one pLED comprises a semiconductor layer stack made of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and the second layer, an electrically conductive first contact layer on the first layer, and an electrically conductive second contact layer on the second layer. The optoelectronic component additionally comprises a dielectric material layer which touchingly surrounds at least side surfaces of the at least one pLED and which has a second emission surface for light emitted from the first emission surface, the second emission surface being at least a factor of 1.1, in particular by at least a factor of 1.5 is larger than the first emission surface , and the optoelectronic component comprises a second contact structure on the dielectric material layer which contacts the electrically conductive second contact layer of the at least one pLED .

[0053] According to some aspects, the dielectric material layer is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the at least one pLED by at most 0 . 1. In particular, the material of the dielectric material layer and / or the material system from which the semiconductor layer stack of the pLED is made can be selected such that a refractive index difference of at most 0 . 1 results between the materials. The materials can in particular be refractive index-matched.

[0054] According to some aspects, the dielectric material layer projects beyond the at least one pLED in a vertical direction, in particular by at least 5% or by at least 10% of the vertical extent of the pLED. Additionally or alternatively, the dielectric material layer projects beyond the pLED in a lateral direction, in particular by at least 10% or by at least 20% of the lateral extent of the pLED. In particular, the outer dimensions of the dielectric material layer can essentially define the size of the optoelectronic component. In this case, the dielectric material layer can project beyond the at least one pLED in the vertical and / or lateral direction in order to increase the size of the small pLED according to its field of application and the processing processes available for this purpose using an inexpensive material.

[0055] According to some aspects, the optoelectronic component further comprises a first contact structure, which is arranged on a side of the dielectric material layer opposite the second contact structure and contacts the electrically conductive first contact layer of the at least one pLED. In particular, the first and second contact structures can be provided in order to be able to apply a first and a second potential to the optoelectronic component and the pLED, respectively, for their operation.

[0056] According to some aspects, the second contact structure has a through-contact through the dielectric material layer, such that the second contact structure can be electrically contacted from a side of the dielectric material layer opposite the second contact structure. This makes it possible to provide an optoelectronic component that can be controlled from only one side according to a flip chip, although the pLED(s) itself can be controlled vertically.

[0057] According to some aspects, the dielectric material layer is configured to contactingly surround at least the side surfaces of at least two pLEDs.

[0058] According to some aspects, at least one of the at least two pLEDs is designed to emit light of a first wavelength and at least one other of the at least two pLEDs is designed to emit light of a second wavelength that is different from the first. The at least two pLEDs can in particular be pLEDs that are designed to emit light of a different wavelength. For example, optoelectronic components can be provided that comprise a plurality of pLEDs and that are designed to emit light of different colors, such as red, green and blue (RGB) or infrared, red, green and blue (IRGB).However, this is to be understood in such a way that several pLEDs which are designed to emit light of the same color can be combined with pLEDs which are designed to emit different colors as required, and that only several which are designed to emit light of the same color can be combined in order to provide, for example, monochromatic light.

[0059] According to some aspects, the optoelectronic component additionally comprises at least one vertically contactable optoelectronic sensor which is surrounded in contact by the dielectric material layer. The vertically contactable optoelectronic sensor can in particular be a sensor which can, for example, detect light emitted by the pLED(s) and reflected by an object. For example, the sensor can be an infrared sensor in order to provide a proximity sensor, for example. Thus, for example, optoelectronic components can be provided which are designed not only to emit light, but also to detect light.

[0060] According to some aspects, the at least two pLEDs and optionally the at least one sensor are electrically contacted by means of regions of the first and / or second contact structure. For example, at least the at least two pLEDs can be connected in parallel and thus can be controlled in parallel. Alternatively, the at least two pLEDs can also be arranged and contacted on the temporary carrier in such a way that they are connected in series by means of regions of the first and / or second contact structure and can thus be controlled in parallel. For this purpose, for example, one of the at least two pLEDs can be arranged in an arrangement mirrored around the active region and contacted, for example, by means of the second contact structure, so that a serial connection with a further one of the at least two pLEDs results. According to a further aspect, an optoelectronic package is proposed.The optoelectronic package comprises a first carrier substrate with at least one first contact pad, and at least one optoelectronic component according to some of the aspects already mentioned, which is arranged on the first carrier substrate. The electrically conductive first contact layer of the at least one optoelectronic component is electrically coupled to the at least one first contact pad on the carrier substrate. In addition, the package comprises a frame that is arranged on the first carrier substrate and surrounds the at least one optoelectronic component in the lateral direction.

[0061] According to some aspects, an inner wall of the frame facing the at least one optoelectronic component and / or an upper side of the first carrier substrate facing the at least one optoelectronic component is designed to be reflective, so that a desired emission or detection behavior can be achieved by means of the optoelectronic package.

[0062] According to some aspects, at least one second contact pad is further formed on the first carrier substrate, wherein the second contact structure of the at least one optoelectronic component is electrically coupled to the at least one second contact pad. This can be achieved either by means of, for example, a lithographically produced contact bridge or by the at least one optoelectronic component being formed as a flip chip and being arranged on the first and second contact pads.

[0063] The term package can be understood in particular as an assembly which comprises at least one optoelectronic component according to some of the aspects already mentioned. Depending on the field of application, the assembly can, however, be designed differently in accordance with the existing requirements. It should therefore be understood that the optoelectronic package is not limited to the embodiments described, but can be developed in accordance with known packages. According to a further aspect, an optoelectronic arrangement, in particular a display, is proposed. The arrangement comprises a second carrier substrate and a multiplicity of optoelectronic components arranged in rows and columns according to some of the aspects already mentioned and / or a multiplicity of optoelectronic packages arranged in rows and columns according to some of the aspects already mentioned.

[0064] In each case, at least one optoelectronic component or optoelectronic package defines a virtual pixel on the second carrier substrate, wherein in particular at most 50% or at most 10% of the area of ​​each virtual pixel is covered by the at least one optoelectronic component or optoelectronic package, or wherein at most 10% or at most 1% of the area of ​​each virtual pixel is covered by a pLED of the at least one optoelectronic component or the optoelectronic package. The fill factor of pixel size compared to the size of the pLEDs can accordingly be very small.

[0065] Due to such a small fill factor of pixel size compared to the size of the pLEDs, it can be particularly advantageous to provide optoelectronic components or optoelectronic packages that increase the external dimensions of the pLEDs in order to facilitate easier handling of the pLEDs during assembly of the optoelectronic arrangement.

[0066] The term "arrangement" can be understood in particular as a product that comprises a plurality of optoelectronic components arranged in rows and columns according to some of the aspects already mentioned and / or a plurality of optoelectronic packages arranged in rows and columns according to some of the aspects already mentioned. Depending on the field of application, however, the product can be designed differently according to the existing requirements. It should therefore be understood that the optoelectronic arrangement is not limited to the described embodiments, but can be developed in accordance with known optoelectronic arrangements such as displays, digital displays, video walls, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] Further aspects and embodiments according to the proposed principle will become apparent with reference to the various embodiments and examples which will be described in detail in conjunction with the accompanying drawings.

[0068] Fig. 1A to 1G show steps of a method for producing optoelectronic components according to some aspects of the proposed principle;

[0069] Fig. 1H and II show steps of a method for producing an optoelectronic device according to some aspects of the proposed principle;

[0070] Fig. 2A to 2D show further steps of a method for producing optoelectronic components according to some aspects of the proposed principle;

[0071] Fig. 3A to 3E show steps of a further method for producing optoelectronic components according to some aspects of the proposed principle;

[0072] Fig. 4A to 4D show steps of a further method for producing optoelectronic components according to some aspects of the proposed principle;

[0073] Fig. 5A to 5D show steps of a further method for producing optoelectronic components according to some aspects of the proposed principle;

[0074] Fig. 6A to 6C show embodiments of an optoelectronic package according to some aspects of the proposed principle; Fig. 7 shows an optoelectronic arrangement according to some aspects of the proposed principle;

[0075] Fig. 8A to 8C show a stone view and two top views of

[0076] Embodiments of an optoelectronic component according to some aspects of the proposed principle; and

[0077] Fig. 9 shows a block view of a further embodiment of an optoelectronic component according to some aspects of the proposed principle.

[0078] DETAILED DESCRIPTION

[0079] The following embodiments and examples show various aspects and their combinations according to the proposed principle. The embodiments and examples are not always true to scale. Likewise, various elements can be shown enlarged or reduced in size to emphasize individual aspects. It goes without saying that the individual aspects and features of the embodiments and examples shown in the figures can be combined with one another without thereby impairing the inventive principle. Some aspects have a regular structure or shape. It should be noted that in practice slight deviations from the ideal shape can occur without, however, contradicting the inventive idea.

[0080] Furthermore, the individual figures, features and aspects are not necessarily shown in the correct size, and the proportions between the individual elements do not necessarily have to be correct. Some aspects and features are emphasized by being shown in an enlarged manner. However, terms such as "top", "above", "bottom", "below", "larger", "smaller" and the like are correctly shown in relation to the elements in the figures. It is therefore possible to derive such relationships between the elements from the illustrations. Figures 1A to 1G show steps of a method for producing optoelectronic components 1 according to some aspects of the proposed principle. A first step comprises, as shown in Figure 1A, producing a multiplicity of volume-emitting pLEDs 2 which are arranged at a first distance dl, in particular as close a distance as possible, from one another on a wafer 4 or a substrate 5.are arranged on a holding structure 11a arranged on the wafer 4.

[0081] The pLEDs 2 each comprise a semiconductor layer stack consisting of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and second layers. Furthermore, the pLEDs 2 each comprise an electrically conductive first contact layer 5a on the first layer and an electrically conductive second contact layer 5b on the second layer.

[0082] The first support structure 11a comprises a plurality of support regions 12a, each of which is assigned to a pLED 2 and holds the pLED 2 in position. Regions between the support regions 12a may have been filled at a previous time with a first sacrificial layer (not shown), which may have been removed to remove the pLEDs 2.

[0083] The pLEDs 2 each have a first emission surface 3a, which in the present case is formed by the outer surfaces of the pLEDs 2 that are not covered by the electrically conductive first contact layer 5a. As shown in section in Figure 1A, the emission surface 3a in the present case is formed by the side surfaces 8 of the pLEDs and by the top side of the pLEDs 2, which lies opposite the electrically conductive first contact layer 5a. The emission surface 3a is the surface of the pLEDs 2 through which the pLEDs 2 emit light during their intended use.

[0084] Figures 1B to 1D show possible steps for transferring a subset of the pLEDs 2 from the wafer 4 to a temporary carrier 6 by means of a first transfer stamp 22a. Accordingly, one possibility for transferring a subset of the pLEDs 2 from the wafer 4 to a temporary carrier 6 is to lift a subset of the pLEDs 2 from the wafer 4 and to transfer them by means of the first transfer stamp 22a to the temporary carrier 6 or a second holding structure 11b arranged on the temporary carrier 6. This is done in such a way that the pLEDs 2 are arranged on the temporary carrier 6 at a second distance d2 from one another which is greater than the first distance d1. In the case shown, the second distance corresponds to three times the first distance d1, but it is also possible for the second distance to be greater or smaller and not equal to a multiple of the first distance.

[0085] Figure 1E shows, in abstract form, a step of processing the pLEDs 2 on the temporary carrier 6 such that an intermediate product 10 with a plurality of optoelectronic components 1 is ultimately obtained on the temporary carrier 6. Details of the processing steps that can be performed during the step shown in Figure 1E will be discussed in more detail below.

[0086] Figures 1F to II show possible steps of transferring the processed optoelectronic components 1 from the temporary carrier 6 by means of a second transfer stamp 22b to a second carrier substrate 15b, in particular a backplane of an optoelectronic arrangement or a display 100. In the illustrated case, the optoelectronic components 1 are transferred from the temporary carrier 6 by means of the second transfer stamp 22b at the same distance to the second carrier substrate 15b; however, it is also possible for the optoelectronic components 1 to be arranged on the second carrier substrate 15b at a greater distance, for example, according to a pixel pitch of the display 100.For example, three optoelectronic components 1 which are designed to emit red, green and blue light can be arranged very close to one another on the second carrier substrate 15b, and three further such optoelectronic components 1 can be arranged further away from the three first-mentioned optoelectronic components 1 according to the pixel pitch. Figures 2A to 2D show an embodiment of possible steps in processing the pLEDs 2. The pLEDs 2 are transferred to a second holding structure 11b at a second distance d2, the holding structure 11b comprising support regions 12b, one support region 12b of which is assigned to a pLED 2 in each case. A sacrificial layer 13b is formed between the support regions 12b and, together with the support regions 12b, forms a planar surface.

[0087] The pLEDs 2 are then encased by a dielectric material layer 7, as shown in Figure 2B. This is done in such a way that the pLEDs 2 are encased by the dielectric material layer 7 at least in the lateral direction 1 and the dielectric material layer 7 touchingly surrounds at least side surfaces 8 of the pLEDs 2. In the case shown, the pLEDs 2 are completely encased in a first step, so that the dielectric material layer 7 also projects beyond the pLEDs 2 in the vertical direction v. The encapsulation step can be carried out, for example, by sputtering, dispensing or deposition.

[0088] Figure 2C now shows several examples of a possible structuring of the dielectric material layer 7, so that a structured dielectric material layer 7 with connected regions 7a, 7b is produced, which are each assigned to at least one of the pLEDs 2. According to Figure 2C, the structured dielectric material layer 7 can be flush with the pLEDs in the vertical direction v, or it can project beyond the pLEDs in the vertical direction v. In the latter case, a contact structure 9b can be formed on the regions of the structured dielectric material layer 7, which contact structure makes electrical contact with the electrical second contact layer 5b. In addition, the structured dielectric material layer 7 or regions of the structured dielectric material layer 7 can have bevelled, rounded or other type of side surfaces.

[0089] The possibilities shown in Figure 2C have in common that the structured dielectric material layer 7 or that the regions of the structured dielectric material layer 7 have a second emission surface 3b for light emitted from the first emission surface 3a, wherein the second emission surface 3b is larger than the first emission surface 3a, in particular by at least a factor of 1.1 or 1.5. Thanks to the structured dielectric material layer 7 or the regions of the structured dielectric material layer 7, the volume of the small pLEDs 2 can be increased in order to obtain a larger emission surface on the one hand, and to facilitate processing, further processing and / or assembly of the pLEDs 2 on the other. This is done using more cost-effective materials than more expensive half-elite materials which would be consumed directly on the first wafer during corresponding processing.

[0090] In order to be able to detach the optoelectronic components 1 from the temporary carrier, the second sacrificial layer 13b is subsequently removed, as shown in Figure 2D, and the optoelectronic components 1 remain only on the support regions 12b. Such a temporary carrier 6 with optoelectronic components 1 arranged thereon can form an intermediate product 10 according to aspects of the present application.

[0091] Figures 3A to 3E show a further embodiment of possible steps for processing the pLEDs 2. The pLEDs 2 are transferred to a second support structure 11b at a second distance d2, the support structure 11b comprising support regions 12b, each of which is assigned to a plurality of pLEDs 2. A sacrificial layer 13b is formed between the support regions 12b and, together with the support regions 12b, forms a planar surface.

[0092] 3A to 3E show an embodiment of steps of a method for producing optoelectronic components 1, in which the optoelectronic components 1 each comprise a plurality of pLEDs 2. The pLEDs 2 are placed on an associated support region on a common first contact structure 9a and then encased by means of a dielectric material layer 7. This is done in such a way that the pLEDs 2 are encased by the dielectric material layer 7 at least in the lateral direction 1 and the dielectric material layer 7 surrounds at least side surfaces 8 of the pLEDs 2 in a touching manner. In the case shown, the pLEDs 2 are completely encased in a first step, so that the dielectric material layer 7 also projects beyond the pLEDs 2 in the vertical direction v. The encapsulation step can be carried out, for example, by means of sputtering, dispensing or deposition.

[0093] 3C to 3D, the dielectric material layer 7 is then structured to produce a structured dielectric material layer 7 having connected regions which are each assigned to at least two of the pLEDs 2. A contact structure 9b is formed on the regions of the structured dielectric material layer 7 and makes electrical contact with the electrical second contact layer 5b of the pLEDs 2. In addition, the structured dielectric material layer 7 or regions of the structured dielectric material layer 7 can have bevelled, rounded or other type of side surfaces. Pre-structuring to expose the electrical second contact layers 5b of the pLEDs 2 and to be able to provide the contact structure 9b can also be carried out before structuring into the connected regions 7a.

[0094] According to Figure 3E, the second sacrificial layer 13b is subsequently removed, and the optoelectronic components 1 remain only on the support regions 12b. Such a temporary carrier 6 with optoelectronic components 1 arranged thereon can form an intermediate product 10 according to aspects of the present application. The pLEDs 2 per optoelectronic component 1 are connected in particular in parallel to one another and can either be designed to be redundant to one another or to increase the light output of the optoelectronic component 1.

[0095] Figures 4A to 4D and 5A to 5D show a further embodiment of possible steps in processing the pLEDs 2. The pLEDs 2 are transferred to a second holding structure 11b at a second distance d2, the holding structure 11b comprising support regions 12b, each of which is assigned to a plurality of pLEDs 2. A sacrificial layer 13b is formed between the support regions 12b and, together with the support regions 12b, forms a planar surface. Regions of a first and second contact structure 9a, 9b are also already arranged on the holding structure, the pLEDs 2 being arranged on regions of the first contact structure 9a and being electrically connected to these. The regions of the first and second contact structure 9a, 9b serve to provide optoelectronic components in a flip-chip configuration.

[0096] For this purpose, the pLEDs 2 are encased by a dielectric material layer 7. This is done in such a way that the pLEDs 2 are encased by the dielectric material layer 7 at least in the lateral direction 1 and the dielectric material layer 7 touchingly surrounds at least side surfaces 8 of the pLEDs 2. The dielectric material layer 7 is then structured to produce a structured dielectric material layer 7 with connected regions, each of which is assigned to at least one of the pLEDs 2. As shown in Figures 4C and 5C, a further part of the second contact structure 9b is formed on the regions of the structured dielectric material layer 7, which makes electrical contact with the electrical second contact layer 5b of the pLEDs 2 and forms vias 14 through the dielectric material layer 7, which are connected to the first part of the second contact structure 9b.

[0097] According to Figures 4D and 5D, the second sacrificial layer 13b is subsequently removed, and the optoelectronic components 1 remain only on the support regions 12b. Such a temporary carrier 6 with optoelectronic components 1 arranged thereon can form an intermediate product 10 according to aspects of the present application. The optoelectronic components 1 are in a flip-chip configuration, so that they can be electrically connected from only one side of the components.

[0098] 6A to 6C show embodiments of an optoelectronic package 20 according to some aspects of the proposed principle. The packages 20 each comprise a first carrier substrate 15a with at least one first and one second contact pad 16a, 16b, wherein an optoelectronic component 1 according to some of the aforementioned aspects is arranged on the first contact pad in such a way that the electrically conductive first contact layer 5a is electrically coupled to the first contact pad 16a. In the cases shown, the optoelectronic components 1 are in particular the optoelectronic components 1 shown in FIGS. 2D, 3E and 4D. In addition, a frame 17 is arranged on the first carrier substrate 15a and surrounds the optoelectronic components 1 in the lateral direction.

[0099] In the case illustrated in Figures 6A and 6B, the second contact structure 9b is connected to the second contact pad 16b by means of a lithographically produced contact bridge, whereas in the case illustrated in Figure 6C, the optoelectronic component 1 is designed as a flip-chip and is arranged directly on the first and second contact pads 16a, 16b. The representation of the contact bridge in Figures 6A and 6B is to be understood merely as exemplary and of a functional nature.

[0100] The inner wall 18 of the frame 17 facing the optoelectronic component 1 and the upper side 19 of the first carrier substrate 15a facing the optoelectronic component 1 can, for example, be reflective. This can, for example, increase the efficiency of the package and improve the beam guidance of the package.

[0101] However, the packages shown are to be understood as merely examples, and other configurations of a package comprising one or more optoelectronic components are also conceivable.

[0102] Figure 7 shows an optoelectronic arrangement or display 100 according to some aspects of the proposed principle. The display comprises a second carrier substrate and a plurality of optoelectronic components 1 arranged in rows and columns according to some of the aforementioned aspects. At least one of the optoelectronic components 1 defines a virtual pixel 21 on the second carrier substrate. The optoelectronic components 1 are dimensioned such that at most 50% or at most 10% of the area of ​​each virtual pixel 21 is covered by an optoelectronic component 1, or that at most 10% or at most 1% of the area of ​​each virtual pixel 21 is covered by a pLED 2 of an optoelectronic component.

[0103] Figures 8A to 8C show further embodiments of possible optoelectronic components 1 on a temporary carrier 6. In particular, Figures 8A to 8C show embodiments of optoelectronic components 1 in which the optoelectronic components 1 each comprise a plurality of pLEDs 2, 2a, 2b, 2c. The pLEDs 2, 2a, 2b, 2c are placed on an associated support region on a respective first contact structure 9a and encased by the dielectric material layer 7. The structured dielectric material layer 7 is provided in such a way that a structured dielectric material layer 7 with a contiguous region is produced which is assigned to a selected group of pLEDs 2. A contact structure 9b is formed on the structured dielectric material layer 7 and electrically contacts the electrical second contact layers 5b of the pLEDs 2.

[0104] An electrical via is also formed centrally by the dielectric material layer 7, so that the optoelectronic component 1 can be surface-mounted or horizontally electrically contacted similarly to an SMD component.

[0105] The pLEDs 2 per optoelectronic component 1 are, in particular, connected in parallel to one another and can either be configured redundantly to one another or increase the light output of the optoelectronic component 1. Accordingly, the pLEDs 2, as shown in Fig. 8B, can be configured to emit light of the same wavelength. However, as shown in Fig. 8C, the pLEDs 2a, 2b, 2c can also be configured to emit light of different colors, so that, for example, an RGB or IRGB pixel can be provided.

[0106] However, it should be understood that the arrangement of the pLEDs 2, 2a, 2b, 2c, the arrangement of the electrical via, the number of pLEDs and the common contacting of the pLEDs in the figures shown are only examples, and depending on requirements, a different arrangement of the pLEDs 2, 2a, 2b, 2c, a different arrangement of the electrical via, a different number of pLEDs and a different contacting of the pLEDs is possible. For example, the pLEDs can also be arranged in a circle around an electrical via or asymmetrically around a plurality of electrical vias. In addition, one of the pLEDs can be replaced or added by a vertically contactable optoelectronic sensor or several such optoelectronic sensors.

[0107] In addition, the pLEDs, as shown for example in Fig. 9, can also be at least partially electrically coupled to one another in series, for example by using one of the pLEDs 2 rotated, so that the first layer 23 of the pLED 2 shown on the right is electrically coupled to the second contact structure 9b via the first contact layer 5a and is thus coupled in series to the pLED 2 shown on the left.

[0108] LIST OF REFERENCE SYMBOLS optoelectronic component

[0109] 2 , 2a, 2b , 2c pLED

[0110] 3a , 3b Emission area

[0111] 4 wafers

[0112] 5a , 5b Contact layer

[0113] 6 temporary supports

[0114] 7 dielectric material layer

[0115] 7a , 7b area

[0116] 8 side surface

[0117] 9a , 9b Contact structure

[0118] 10 Intermediate product

[0119] Ila, 11b Maintain structure

[0120] 12a, 12b support area

[0121] 13a, 13b sacrificial layer

[0122] 14 By contact

[0123] 15a, 15b carrier subs trat

[0124] 16a, 16b contact pad

[0125] 17 frames

[0126] 18 Interior wall

[0127] 19 Top

[0128] 20 optoelectronic package

[0129] 21 virtual pixels

[0130] 22a, 22b stamp

[0131] 23 first layer

[0132] 24 second shift

[0133] 25 active regions

[0134] 100 optoelectronic arrangement dl , d2 distance vertical direction lateral direction

Claims

PATENT CLAIMS 1. A method for producing a plurality of optoelectronic components (1), in particular encapsulated p-LEDs, comprising the steps of: Producing a plurality of volume-emitting pLEDs (2), each having a first emission surface (3a), on a wafer (4), which are arranged at a first distance (dl) from one another on the wafer (4), wherein the pLEDs (2) comprise: a semiconductor layer stack of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and the second layer; an electrically conductive first contact layer (5a) on the first layer; and an electrically conductive second contact layer (5b) on the second layer; Transferring a subset of the plurality of pLEDs (2) from the wafer (4) to a temporary carrier (6) such that at least two pLEDs (2) of the subset of pLEDs are arranged on the temporary carrier (6) at a second distance (d2) from one another that is greater than the first distance (d1); Creating a structured dielectric material layer (7) on the temporary carrier (6), which surrounds at least side surfaces (8) of the subset of pLEDs (2) in a contacting manner, and which has a second emission surface (3b) for light emitted by the first emission surface (3a), wherein the second emission surface (3b) is larger than the first emission surface (3a), in particular by at least a factor of 1.1; Creating a structured second contact structure (9b) on the structured dielectric material layer (7), wherein the structured second contact structure (9b) contacts the electrically conductive second contact layer (5b) of the pLEDs (2).

2. The method according to claim 1, wherein the structured dielectric material layer (7) is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the plurality of pLEDs (2) by at most 0.

1.

3. The method according to claim 1 or 2, wherein the structured dielectric material layer (7) projects beyond the pLEDs (2) in a vertical direction (v) perpendicular to the temporary carrier (6), in particular by at least 5% or by at least 10% of the vertical extent of the pLEDs (2); and / or wherein the structured dielectric material layer (7) projects beyond the pLEDs (2) in a lateral direction (1), in particular by at least 10% or by at least 20% of the lateral extent of the pLEDs (2).

4. The method according to any one of the preceding claims, wherein the step of producing the structured dielectric material layer (7) comprises producing regions (7a, 7b) of the structured dielectric material layer (7) such that a contiguous region (7a, 7b) of the structured dielectric material layer (7) is assigned to at least one of the plurality of pLEDs (2), wherein the contiguous region (7a, 7b) has a second emission surface (3b) for light emitted by the first emission surface (3a), which is larger than the first emission surface (3a), in particular larger by at least a factor of 1.

1.

5. The method according to any one of the preceding claims, wherein the step of producing the structured dielectric material layer (7) comprises at least partially exposing the electrically conductive second contact layers (5b) from the dielectric material layer (7).

6. Method according to one of the preceding claims, wherein the step of producing the plurality of pLEDs (2) comprises producing the semiconductor layer stack on a first support structure (11a).

7. The method according to claim 6, wherein the first holding structure (11a) is structured such that a support region (12a) of the first holding structure (11a) is assigned to each of the plurality of pLEDs (2), and wherein regions between the support regions (12a) of the first holding structure (11a) are filled with a first sacrificial layer (13a).

8. The method according to any one of the preceding claims, wherein the step of transferring the subset of the plurality of pLEDs (2) comprises placing the pLEDs (2) on a second support structure (11b).

9. The method according to claim 8, wherein the second holding structure (11b) is structured such that a support region (12b) of the second holding structure (11b) is assigned to at least one pLED (2) of the subset of the pLEDs (2), and wherein regions between the support regions (12b) of the second holding structure (11b) are filled with a second sacrificial layer (13b).

10. The method according to any one of the preceding claims, further comprising a step of providing a first contact structure (9a) on the temporary carrier (6) or the second holder structure (11b), wherein regions of the structured first contact structure (9a) each contact the electrically conductive first contact layer (5a) of at least one of the pLEDs (2).

11. The method according to any one of the preceding claims, wherein the step of producing the patterned dielectric material layer (7) and the step of producing the plurality of pLEDs (2) are performed at wafer level.

12. An intermediate product (10) comprising: a plurality of volume-emitting pLEDs (2), each having a first emission surface (3a), which are arranged at a distance from one another on a holding structure (11b) on a temporary carrier (6), wherein the pLEDs (2) comprise: a semiconductor layer stack consisting of at least a first layer of a first conductivity type, a second layer of a second conductivity type, and an active region arranged between the first and the second layer; an electrically conductive first contact layer (5a) on the first layer; and an electrically conductive second contact layer (5b) on the second layer;a structured dielectric material layer (7) which surrounds at least side surfaces (8) of the pLEDs (2) in contact, and which has a second emission surface (3b) for light emitted by the first emission surface (3a), wherein the second emission surface (3b) is larger than the first emission surface (3a), in particular by at least a factor of 1.1; and a structured second contact structure (9b) on the structured dielectric material layer (7), wherein the structured second contact structure (9b) contacts the electrically conductive second contact layer (5b) of the pLEDs (2).

13. Intermediate product according to claim 12, wherein the structured dielectric material layer (7) is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the plurality of pLEDs (2) by at most 0.

1.

14. Intermediate product according to claim 12 or 13, wherein the structured dielectric material layer (7) projects beyond the pLEDs (2) in a vertical direction (v) perpendicular to the temporary carrier (6), in particular by at least 5% or by at least 10% of the vertical extent of the pLEDs (2); and / or wherein the structured dielectric material layer (7) projects beyond the pLEDs (2) in a lateral direction (1), in particular by at least 10% or by at least 20% of the lateral extent of the pLEDs (2).

15. Intermediate product according to one of claims 12 to 14, wherein the structured dielectric material layer (7) has contiguous regions (7a, 7b), each of which is assigned to at least one of the plurality of pLEDs (2), wherein the contiguous regions (7a, 7b) each have a second emission surface (3b) for light emitted by the first emission surface (3a), which is larger than the first emission surface (3a), in particular larger by at least a factor of 1.

1.

16. Intermediate product according to one of claims 12 to 15, wherein the holding structure (11b) is structured such that a support region (12b) of the holding structure (11b) is assigned to at least one pLED (2) of the plurality of pLEDs, and wherein regions between the support regions (12b) of the holding structure (11b) are filled with a sacrificial layer (13b).

17. Intermediate product according to one of claims 12 to 16, further comprising a structured first contact structure (9a) which is arranged on the temporary carrier (6) and / or the holder structure (11b), wherein regions of the structured first contact structure (9a) each contact the electrically conductive first contact layer (5a) of at least one of the pLEDs (2).

18. Intermediate product according to one of claims 12 to 17, wherein at least one contiguous region (7a) of the structured dielectric material layer (7) surrounds at least the side surfaces (8) of at least two pLEDs (2) in a contacting manner, and wherein the at least one contiguous region (7a) has a second emission surface (3b) for light emitted by the first emission surface (3a), which is larger than the first emission surface (3a), in particular by at least a factor of 1.5, and wherein optionally the at least two pLEDs (2) which are assigned to a contiguous region (7a) of the structured dielectric material layer (7) are connected in parallel by means of regions of the structured first and / or second contact structure (9a, 9b).

19. Intermediate product according to claim 18, wherein the at least two pLEDs (2) assigned to a contiguous region of the structured dielectric material layer (7) are arranged more closely spaced from one another on the temporary carrier (6) than adjacent pLEDs (2) assigned to different contiguous regions of the structured dielectric material layer (7).

20. Optoelectronic component (1), in particular encapsulated p-LED, comprising: at least one volume-emitting pLED (2, 2a, 2b, 2c) with a first emission surface (3a) comprising: a semiconductor layer stack of at least a first layer (23) of a first conductivity type, a second layer (24) of a second conductivity type, and an active region (25) arranged between the first and second layers (23, 24); an electrically conductive first contact layer (5a) on the first layer (23); and an electrically conductive second contact layer (5b) on the second layer (24); a dielectric material layer (7) which surrounds at least side surfaces (8) of the at least one pLED (2) in a contacting manner and which has a second emission surface (3b) for light emitted by the first emission surface (3a), wherein the second emission surface (3b) is at least a factor of 1.1 is larger than the first emission surface (3a); and a second contact structure (9b) on the dielectric material layer (7) which contacts the electrically conductive second contact layer (5b) of the at least one pLED (2).

21. Optoelectronic component according to claim 20, wherein the dielectric material layer (7) is formed from a material having a refractive index that differs from the refractive index of the material of the semiconductor layer stack of the at least one pLED (2) by at most 0.

1.

22. Optoelectronic component according to claim 20 or 21, wherein the dielectric material layer (7) projects beyond the at least one pLED (2) in a vertical direction (v), in particular by at least 5% or by at least 10% of the vertical extent of the at least one pLED (2); and / or wherein the dielectric material layer (7) projects beyond the at least one pLED (2) in a lateral direction (1), in particular by at least 10% or by at least 20% of the lateral extent of the at least one pLED (2).

23. Optoelectronic component according to one of claims 20 to 22, further comprising a first contact structure (9a) which is arranged on a side of the dielectric material layer (7) opposite the second contact structure (9b) and contacts the electrically conductive first contact layer (5a) of the at least one pLED (2).

24. Optoelectronic component according to one of claims 20 to 23, wherein the second contact structure (9b) has a through-contact (14) through the dielectric material layer (7), such that the second contact structure (9b) can be electrically contacted from a side of the dielectric material layer (7) opposite the second contact structure (9b).

25. Optoelectronic component according to one of claims 20 to 24, wherein the dielectric material layer (7) surrounds at least the side surfaces (8) of at least two pLEDs (2, 2a, 2b, 2c) in a touching manner, and wherein in particular at least one of the plurality of volume-emitting pLEDs (2a) is designed to emit light of a first wavelength and at least one other of the plurality of volume-emitting pLEDs (2a) are designed to emit light of a second wavelength different from the first.

26. Optoelectronic component according to claim 25, wherein the at least two pLEDs (2) are connected in parallel by means of the first and / or second contact structure (9a, 9b), or wherein the at least two pLEDs (2) are connected in series by means of the first and / or second contact structure (9a, 9b).

27. Optoelectronic component according to one of claims 20 to 26, further comprising at least one vertically contactable sensor component which is surrounded in contact by the dielectric material layer (7) and which electrically contacts the second contact structure (9b).

28. An optoelectronic package (20) comprising: a first carrier substrate (15a) having at least one first contact pad (16a); at least one optoelectronic component (1) according to one of claims 20 to 26, which is arranged on the first carrier substrate (15), wherein the electrically conductive first contact layer (5a) of the at least one optoelectronic component (1) is electrically coupled to the at least one first contact pad (16a); and a frame (17) which is arranged on the first carrier substrate (15a) and surrounds the at least one optoelectronic component (1) in the lateral direction (1).

29. Optoelectronic package according to claim 28, wherein an inner wall (18) of the frame (17) facing the at least one optoelectronic component (1) and / or an upper side (19) of the first carrier substrate (15a) facing the at least one optoelectronic component (1) is designed to be reflective.

30. Optoelectronic package according to claim 28 or 29, wherein at least one second contact pad (16b) is further formed on the first carrier substrate (15a) and the second contact structure (9b) of the at least one optoelectronic component (1) is electrically coupled to the at least one second contact pad (16b).

31. Optoelectronic arrangement (100), in particular a display, comprising a second carrier substrate (15b) and a plurality of optoelectronic components (1) according to one of claims 20 to 25 or optoelectronic package (20) according to one of claims 28 to 30 arranged in rows and columns, wherein in each case at least one optoelectronic component (1) or optoelectronic package (20) defines a virtual pixel (21) on the second carrier substrate (15b), and wherein at most 10% of the area of ​​each virtual pixel (21) is covered by the at least one optoelectronic component (1) or optoelectronic package (20), or wherein at most 1% of the area of ​​each virtual pixel (21) is covered by a pLED (2) of the at least one optoelectronic component (1) or the optoelectronic package (20).

Images