Semiconductor manufacturing device for epitaxial process

Abstract

The present invention provides a semiconductor manufacturing device for an epitaxial process, including: a process chamber provided with an edge ring which supports the outer lower surface of a semiconductor substrate so that the lower surface of the semiconductor substrate is exposed, a substrate support which supports the outer lower surface of the edge ring, and a laser beam transmission plate positioned below the semiconductor substrate; a substrate heating part which emits a laser beam emitted from a VCSEL module to the semiconductor substrate and the lower surface of the edge ring through the laser beam transmission plate; and a beam guide part which emits a laser beam of a VCSEL module to the lower surface of the edge ring, wherein the substrate heating part is divided into a heating substrate area, a heating edge area, and a heating support area, in which VCSEL modules are positioned, and the beam guide part guides and emits a laser beam emitted from a VCSEL module positioned in the heating support area to the lower surface of the edge ring.

Description

Semiconductor manufacturing equipment for epitaxial processes

[0001] The present invention relates to a semiconductor manufacturing device for an epitaxial process that deposits a thin film using an epitaxial process on a flat substrate including a semiconductor substrate.

[0002] A semiconductor substrate, such as a glass substrate for a semiconductor substrate or flat panel display device, can be manufactured into a semiconductor or flat panel display module by undergoing a heat treatment process, such as an epitaxial process, a thin film crystallization process, an ion implantation process, or an activation process.

[0003] The above epitaxial process is a process of growing a necessary thin film on the surface of a semiconductor substrate, and can be performed in a semiconductor manufacturing device equipped with a process chamber. The epitaxial process can be performed by heating the semiconductor substrate to a predetermined temperature or higher while injecting a process gas into a process chamber maintained in a vacuum state. The semiconductor substrate needs to maintain a uniform temperature throughout the epitaxial process. In addition, since the process chamber is maintained at a high temperature internally, it needs to have durability and heat resistance. In addition, the process chamber needs to be sealed to prevent the process gas from leaking to the outside.

[0004] Meanwhile, semiconductor manufacturing equipment in which the epitaxial process is performed has recently been trying to use a VCSEL (Vertical Cavity Surface Emitting Laser) element that heats a semiconductor substrate by irradiating a laser beam. A substrate heating unit formed by arranging a plurality of VCSEL elements can heat the semiconductor substrate by irradiating a laser beam to the lower surface of the semiconductor substrate. During the heating process, the semiconductor substrate requires a small temperature deviation and high temperature uniformity due to the miniaturization of semiconductor technology. Since the outer lower surface of the semiconductor substrate is supported by a separate substrate support, a relatively large amount of heat may be released to the area in contact with the substrate support. Accordingly, the semiconductor substrate may not be used for element formation because the temperature on the outer side is lower than that on the inner side.

[0005] The purpose of the present invention is to provide a semiconductor manufacturing device for an epitaxial process capable of uniformly heating the entire semiconductor substrate.

[0006] The semiconductor manufacturing device for an epitaxial process of the present invention comprises a process chamber having an edge ring for supporting an outer lower surface of a semiconductor substrate so that the lower surface of the semiconductor substrate is exposed, a substrate support for supporting the outer lower surface of the edge ring, and a laser beam transmitting plate positioned below the semiconductor substrate, a substrate heating unit for irradiating a laser beam of a VCSEL module to the semiconductor substrate and the lower surface of the edge ring through the laser beam transmitting plate, and a beam guide unit for irradiating the laser beam of the VCSEL module to the lower surface of the edge ring, wherein the substrate heating unit is divided into a heating substrate region where the VCSEL module is positioned, a heating edge region, and a heating support region, and the beam guide unit is characterized in that it guides and irradiates the laser beam irradiated from the VCSEL module positioned in the heating support region to the lower surface of the edge ring.

[0007] In addition, the edge ring may extend outward from the upper portion of the inner surface and be formed with an inner diameter smaller than the outer diameter of the semiconductor substrate, and the substrate support may include an upper support having an edge ring support hole formed with an inner diameter smaller than the outer diameter of the edge ring and an edge ring support step formed with an inner diameter larger than the outer diameter of the edge ring, which extends outward from the upper portion of the inner surface of the edge ring support hole.

[0008] Additionally, the edge ring may have an emissivity per unit area equal to or greater than that of the semiconductor substrate relative to the horizontal plane.

[0009] In addition, the laser beam transmitting plate has a transmitting substrate region, a transmitting edge region, and a transmitting support region corresponding to the heating substrate region, the heating edge region, and the heating support region, and the beam guide bar may have a lower surface positioned above the transmitting support region, and an upper surface positioned below the edge ring.

[0010] In addition, the beam guide bar may be formed so that the upper and lower surfaces are horizontal planes, the central axis forms a straight line, and the central axis forms an angle less than 90 degrees with the lower surface.

[0011] In addition, the beam guide bar is formed so that the central axis forms a vertical straight line at the bottom and an inclined straight line at the top, and the vertical straight line and the inclined straight line can form an angle greater than 90°.

[0012] Additionally, the beam guide bar can be formed so that the central axis forms a vertical straight line at the bottom, an inclined straight line at the middle, and a vertical straight line at the top.

[0013] Additionally, the beam guide bar may be formed of quartz.

[0014] The semiconductor manufacturing device for an epitaxial process of the present invention can uniformly heat the semiconductor substrate by simultaneously heating the edge ring with a substrate heating section formed of a VCSEL element.

[0015] In addition, the semiconductor manufacturing device for the epitaxial process of the present invention can reduce heat of the semiconductor substrate from being released through the edge ring and make the temperature of the semiconductor substrate uniform by separately irradiating a laser beam to an edge ring that supports the outer side of the semiconductor substrate and heating it to a temperature similar to that of the semiconductor substrate.

[0016] In addition, the semiconductor manufacturing device for the epitaxial process of the present invention may not require a separate heating means because it heats the edge ring supporting the outer side of the semiconductor substrate using a laser beam irradiated from the substrate heating unit.

[0017] In addition, the semiconductor manufacturing device for the epitaxial process of the present invention can increase the area where elements are formed on the semiconductor substrate by uniformly heating the outer and inner sides of the semiconductor substrate as a whole.

[0018] FIG. 1 is a schematic diagram of a semiconductor manufacturing device for an epitaxial process according to one embodiment of the present invention.

[0019] Figure 2 is a partial enlarged view of “A” in Figure 1.

[0020] Figure 3 is a horizontal cross-sectional view of BB in Figure 1.

[0021] Fig. 4 is a partial perspective view of the substrate heating unit of Fig. 1.

[0022] FIG. 5 is a partial perspective view of a substrate heating unit according to another embodiment of the present invention.

[0023] FIG. 6 is a partial perspective view of a substrate heating unit according to another embodiment of the present invention.

[0024] Figure 7 is a vertical cross-sectional view of a beam guide portion according to another embodiment of the present invention.

[0025] Figure 8 is a vertical cross-sectional view of a beam guide portion according to another embodiment of the present invention.

[0026] Fig. 9 is a simulation result of the guidance direction and irradiation density of the laser beam of the beam guide part of Fig. 1.

[0027] Fig. 10 is a simulation result of the guidance direction and irradiation density of the laser beam of the beam guide part of Fig. 7.

[0028] Figure 11 is a simulation result of the guidance direction and irradiation density of the laser beam of the beam guide part of Figure 8.

[0029] Figure 12 shows the results of simulating the guidance direction and irradiation density of a laser beam in the absence of a beam guide unit.

[0030] Hereinafter, the semiconductor manufacturing device for epitaxial process of the present invention will be described in more detail through examples and the attached drawings.

[0031]

[0032] First, the structure of a semiconductor manufacturing device for an epitaxial process according to one embodiment of the present invention will be described.

[0033] FIG. 1 is a schematic diagram of a semiconductor manufacturing apparatus for an epitaxial process according to an embodiment of the present invention. FIG. 2 is a partial enlarged view of "A" in FIG. 1. FIG. 3 is a horizontal cross-sectional view taken along line BB in FIG. 1. FIG. 4 is a partial perspective view of a substrate heating unit in FIG. 1. FIG. 5 is a partial perspective view of a substrate heating unit according to another embodiment of the present invention. FIG. 6 is a partial perspective view of a substrate heating unit according to still another embodiment of the present invention. FIG. 7 is a vertical cross-sectional view of a beam guide unit according to another embodiment of the present invention. FIG. 8 is a vertical cross-sectional view of a beam guide unit according to another embodiment of the present invention.

[0034]

[0035] A semiconductor manufacturing apparatus (10) for an epitaxial process according to one embodiment of the present invention may include a process chamber (100), a substrate heating unit (200), and a beam guide unit (300), referring to FIGS. 1 to 4. In addition, the semiconductor manufacturing apparatus (10) for an epitaxial process may include a cooling gas injection unit (400) and a substrate rotation unit (500).

[0036] The above semiconductor manufacturing device (10) for the epitaxial process can deposit a thin film on the surface of a semiconductor substrate (a) using an epitaxial process. For example, the semiconductor device manufacturing device (10) can deposit [Si / SiGe] on the semiconductor substrate (a). x ]n can be used to form a multilayer thin film by an epitaxy process.

[0037] In addition, the semiconductor manufacturing device (10) for the epitaxial process can be applied to a semiconductor manufacturing process such as a crystallization process, an ion implantation process, or an activation process. The semiconductor manufacturing device (10) for the epitaxial process can be applied to a semiconductor substrate (a) such as a glass substrate in addition to a semiconductor substrate (a) such as a wafer. In addition, the semiconductor manufacturing device (10) for the epitaxial process can be applied to a flexible substrate such as a resin film. In addition, the semiconductor substrate (a) can include various elements or conductive patterns formed on the surface or inside.

[0038] The substrate heat treatment device (10) can heat the semiconductor substrate (a) by irradiating the semiconductor substrate (a) with a laser beam generated from the substrate heating unit (200). The semiconductor manufacturing device (10) for the epitaxial process may include a substrate heating unit (200) for heating the semiconductor substrate (a) that includes a plurality of VCSEL elements. The VCSEL element may irradiate a laser beam of a single wavelength. For example, the VCSEL element may be an element that preferably irradiates a laser beam of a single wavelength of approximately 940 nm. In addition, the VCSEL element may be an element that irradiates laser beams of multiple wavelengths.

[0039] The semiconductor device manufacturing device (10) can directly support the outer lower surface of the semiconductor substrate (a). Since the semiconductor device manufacturing device (10) directly supports the semiconductor substrate (a), the semiconductor substrate (a) can be rapidly heated or cooled within a deposition temperature range of 400 to 1,000°C for an epitaxy process. In addition, since the semiconductor device manufacturing device (10) directly heats the semiconductor substrate (a), it can reduce changes in deposition temperature and deposition speed even in a bowing phenomenon of the semiconductor substrate (a) that occurs during the epitaxy process.

[0040]

[0041] The above process chamber (100) may include an outer housing (110), an inner housing (120), an edge ring (130), a substrate support (140), a laser beam transmitting plate (150), and an infrared transmitting plate (160).

[0042] The process chamber (100) may have a chamber upper space (100a) formed on the upper side of the outer housing (110) in which a semiconductor substrate (a) is mounted and heat-treated. The chamber upper space (100a) is formed on the upper side of the inner housing (120) on the inner side of the outer housing (110) and may provide a space in which the semiconductor substrate (a) is mounted and an epitaxy process is performed. In addition, the process chamber (100) may have a chamber lower space (100b) formed between the outer housing (110) and the inner housing (120). The chamfer lower space may provide a space in which a portion of the substrate rotation unit (500) is accommodated.

[0043] The semiconductor substrate (a) may be supported so that its lower surface is exposed by a substrate support (140) and an edge ring (130) inside a process chamber (100). The process chamber (100) allows a laser beam generated from a substrate heating unit (200) located outside to be irradiated to the lower surface of a flat substrate located inside. The process chamber (100) allows the laser beam to pass through a laser beam transmitting plate (150) and be irradiated to the lower surface of the semiconductor substrate (a) mounted on the substrate support (140) and the edge ring (130).

[0044]

[0045] The above outer housing (110) may include an outer upper wall (111), an outer lower wall (113), an upper plate (115), and a lower plate (117). The outer housing (110) may be formed in a generally hollow cylindrical shape. The outer housing (110) may be formed in an approximately cylindrical shape, a square cylindrical shape, a pentagonal cylindrical shape, or a hexagonal cylindrical shape. The outer housing (110) may be formed in a shape having a horizontal cross-sectional area larger than the area of ​​the semiconductor substrate (a) mounted therein. The outer upper wall (111) and the outer lower wall (113) may be formed integrally.

[0046] The external housing (110) may be formed of a metal material that is resistant to damage due to pressure and temperature changes so that it can respond to positive and negative pressure conditions and rapid temperature changes that occur during manufacturing. In addition, the external housing (110) may be formed of a metal material that is corrosion resistant to process gases used in the manufacturing process. The external housing (110) may be formed of a metal material such as stainless steel, Invar alloy, or Hastelloy.

[0047] The above outer upper wall (111) may be formed in a hollow cylinder shape. The above outer upper wall (111) may be formed in a cylindrical shape, a square cylinder shape, a pentagonal cylinder shape, or a hexagonal cylinder shape. The above outer upper wall (111) may provide a space in which a portion of the substrate rotation unit (500), the substrate support (140), and the semiconductor substrate (a) are accommodated therein.

[0048] The outer upper wall (111) may include a process gas supply hole (111a) and a process gas discharge hole (111b). In addition, the outer upper wall may further include a cooling gas discharge hole (111c).

[0049] The above process gas supply hole (111a) may be formed by penetrating from the outside of the external upper wall (111) to the chamber upper space (100a) on one side of the external upper wall (111). The internal end of the process gas supply hole (111a) may be formed parallel to the upper surface of the semiconductor substrate (a) at the same height. The process gas supply hole (111a) may be formed in a straight shape, a curved shape, or a bent shape depending on the position at which it is formed in the external upper wall (111). The process gas supply hole (111a) may provide a path for supplying a process gas to the chamber upper space (100a).

[0050] The above process gas discharge hole (111b) may be formed by penetrating outward from the chamber upper space (100a) of the outer upper wall on the other side of the outer upper wall (111). The process gas discharge hole may be located lower than the process gas supply hole (111a). The process gas discharge hole (111b) may be formed in a straight shape, a curved shape, or a bent shape depending on the position formed in the outer upper wall (111). The process gas discharge hole (111b) may provide a path for discharging gas from the chamber upper space (100a) to the outside.

[0051] The above process gas may be introduced through the process gas supply hole (111a) and deposited as a thin film while flowing through the space between the upper surface of the semiconductor substrate (a) and the infrared transmitting plate (160). Among the above process gases, unreacted process gases and byproduct gases generated after deposition may be discharged to the outside of the process chamber (100) through the process gas discharge hole (111b).

[0052] The above cooling gas discharge hole (111c) may be formed by penetrating from the inside to the outside of the outer upper wall (111) at the top of the infrared transmitting plate (160). The cooling gas discharge hole (111c) may provide a path through which the cooling gas sprayed to the top of the infrared transmitting plate (160) is discharged to the outside. That is, the cooling gas discharge hole (111c) may provide a path through which the cooling gas flowing into the cooling gas spraying space (100c) described below is discharged to the outside.

[0053] The outer lower wall (113) may be formed in a hollow cylinder shape. The outer upper wall (111) may be formed in a cylindrical shape, a square cylinder shape, a pentagonal cylinder shape, or a hexagonal cylinder shape. The outer lower wall (113) may be formed in a shape identical to or similar to that of the outer upper wall (111). The outer lower wall (113) may be formed with a diameter or width smaller than that of the outer upper wall (111). The outer lower wall (113) may be coupled to the lower portion of the outer upper wall (111). The outer lower wall (113) may provide a space therein for accommodating the inner housing (120) and a portion of the substrate rotation unit (500).

[0054] The upper plate (115) may be formed in a plate shape corresponding to the upper plane shape of the outer upper wall (111). The upper plate (115) may be coupled to the upper portion of the outer upper wall (111) to shield the upper portion of the outer upper wall (111). The upper plate (115) may be formed of a metal material such as stainless steel, Invar alloy, or Hastelloy.

[0055] The upper plate (115) may include an upper through hole (115a). The upper through hole (115a) may be formed by penetrating from the upper surface to the lower surface on the inside of the upper plate (115). The upper through hole (115a) may be formed with a diameter or width required to expose the entire infrared transmitting plate (160). The upper through hole (115a) may expose the upper portion of the infrared transmitting plate (160) and provide a space in which the cooling gas sprayed from the cooling gas spray unit (400) flows to the upper surface of the infrared transmitting plate (160). Therefore, the upper through hole (115a) may form an upper cooling gas path (100e) on the upper portion of the infrared transmitting plate (160). The cooling gas may be nitrogen (N2), argon (Ar), or dry air. The cooling gas may cool the infrared transmitting plate (160).

[0056] The upper plate (115) may further include a ring-shaped upper support ring (116) extending downward from the inner lower surface. The upper support ring (116) may be formed to a predetermined height and width. The upper support ring (116) may be coupled so that the lower surface thereof contacts the outer upper surface of the infrared transmitting plate (160). The upper support ring (116) may increase the height of the upper cooling gas passage (100e), thereby increasing the time that the cooling gas remains in the upper cooling gas passage (100e). Accordingly, the cooling gas may effectively cool the infrared transmitting plate (160) while reducing the amount used.

[0057] The lower plate (117) may be formed in a plate shape corresponding to the lower plane shape of the outer lower wall (113). The lower plate (117) may include a lower through hole (117a) penetrating from the upper surface to the lower surface on the inside. The lower plate (117) may be formed as a circular ring or a square ring having a predetermined width. The lower plate (117) is coupled to the lower end of the outer lower wall (113) and may shield the outer side of the outer lower wall (113). The lower plate (117) may seal the space between the outer lower wall (113) and the lower part of the inner housing (120). That is, the lower plate (117) may seal the lower part of the chamber lower space (100b). The lower plate (117) may be formed of a metal material such as stainless steel, Invar alloy, or Hastelloy.

[0058]

[0059] The inner housing (120) is formed in a hollow cylinder shape and may be formed in a cylindrical shape, a square cylinder shape, a pentagonal cylinder shape, or a hexagonal cylinder shape. The inner housing (120) may be formed with an outer diameter or an outer width smaller than the inner diameter or the inner width of the outer lower wall (113). In addition, the inner housing (120) may be formed to have a lower height than the outer lower wall (113). In addition, the upper end of the inner housing (120) may be formed at a height at which a semiconductor substrate (a) is mounted inside the process chamber (100). In addition, the inner housing (120) may be formed to have a larger diameter or larger width than the diameter or width of the semiconductor substrate (a). In addition, the inner housing (120) may be formed to have a larger horizontal area than the semiconductor substrate (a).

[0060] In addition, the inner housing (120) may be coupled so that its lower side is positioned at approximately the same height as the lower side of the outer housing (110). The lower side of the inner housing (120) may be coupled to the inner side of the lower plate (117). The space between the outer side of the inner housing (120) and the inner side of the outer housing (110) may be sealed by the lower plate (117). The inner housing (120) may be formed of a metal material such as stainless steel, Invar alloy, or Hastelloy.

[0061]

[0062] The edge ring (130) may be formed in a ring shape overall. The edge ring (130) may be formed with an inner diameter smaller than the outer diameter of the semiconductor substrate (a). The edge ring (130) may be formed so that its upper surface forms the same plane as the upper surface of the semiconductor substrate (a). The edge ring (130) may support the outer lower surface of the semiconductor substrate (a). At this time, the edge ring (130) may support the lower surface of the semiconductor substrate (a) so as to expose it.

[0063] The above edge ring (130) may include a substrate support step (131) and an edge lower groove (133). Meanwhile, the substrate support step (131) may be formed to have various vertical cross-sections. The edge ring (130) may be formed to include a substrate support step (131) and an edge lower groove (133) of various shapes.

[0064] The above substrate support step (131) may be formed to extend outward from the upper portion of the inner surface. The substrate support step (131) may be formed to have an inner diameter greater than the outer diameter of the semiconductor substrate (a). Accordingly, the substrate support step (131) may enable the outer side of the semiconductor substrate (a) to be stably secured and supported.

[0065] The edge lower groove (133) may be formed with a predetermined depth in an upward direction from the lower surface of the edge ring (130). In addition, the edge lower groove (133) may be formed in a ring shape with a predetermined width on the outer side of the substrate support step (131). The edge lower groove (133) may be formed so that the thickness of the edge ring (130) is uniform throughout.

[0066] The edge ring (130) may be formed to have an emissivity per unit area equal to or greater than that of the semiconductor substrate (a) based on the horizontal plane. To this end, the edge ring (130) may be formed to a predetermined thickness reflecting the emissivity of the material. For example, the edge ring (130) may be formed of a ceramic material. The edge ring (130) may be formed of a SiC material. The edge ring (130) may be formed to have a thickness thinner than that of the semiconductor substrate (a). For example, when the thickness of the semiconductor substrate (a) is 0.7 mm, the thickness of the edge ring (130) may be 0.4 mm. At this time, the semiconductor substrate (a) and the edge ring (130) may have emissivities of 0.6 to 0.7, respectively, based on the same thickness, and the edge ring (130) may have emissivities of 0.7 to 0.8. The edge ring (130) may have a temperature reduction degree that is relatively the same or similar to that of the semiconductor substrate (a) when the laser beam is irradiated thereon.

[0067]

[0068] The substrate support (140) may include an upper support (141) and a side support (143). The substrate support (140) may be positioned on the outer side of the semiconductor substrate (a) at the upper side of the inner housing (120) to support the outer lower surface of the edge ring (130). In addition, the substrate support (140) may expose the lower surface of the semiconductor substrate (a). In addition, the substrate support (140) may extend into the chamber lower space (100b) and be coupled to the substrate rotation unit (500). The substrate support (140) may rotate the edge ring (130) and the semiconductor substrate (a) by the action of the substrate rotation unit (500). A separate hydrogen gas may be supplied to the inner space of the substrate support (140). The hydrogen gas may prevent a process gas from flowing into the inner space of the substrate support (140). Accordingly, the hydrogen gas can prevent the process gas from being deposited as a thin film on the lower surface of the semiconductor substrate (a). Although not specifically shown, the hydrogen gas can be introduced into the interior of the substrate support (140) through a separate inlet.

[0069] The upper support member (141) may be provided with an edge ring support hole (141a) and an edge ring support step (141b) on the inner side. The upper support member (141) may support the lower outer side of the edge ring (130) while exposing the lower surface of the edge ring (130). The upper support member (141) may be formed with a diameter or width larger than the diameter of the edge ring (130).

[0070] The above edge ring support hole (141a) can be formed by penetrating the upper and lower surfaces at the center of the upper support (141). The above edge ring support hole (141a) can be formed with an inner diameter larger than the outer diameter of the edge ring (130) to support the outer lower portion of the edge ring (130).

[0071] The above edge ring support step (141b) may be formed to extend outward from the upper portion of the inner surface of the edge ring support hole (141a). The edge ring support step (141b) may be formed with an inner diameter larger than the outer diameter of the edge ring (130). Therefore, the edge ring support step (141b) may enable the outer side of the edge ring (130) to be stably seated and supported.

[0072] The side support (143) is formed in a cylindrical shape with an open upper and lower portion, and may be formed in a shape corresponding to the shape of the inner housing (120). For example, the side support (143) may be formed in a cylindrical shape corresponding to the inner housing (120) being formed in a cylindrical shape. The side support (143) may be positioned across the chamber upper space (100a) and the chamber lower space (100b). The side support (143) may have an upper portion coupled to the outside of the upper support (141) and a lower portion extended into the chamber lower space (100b) to be coupled to the substrate rotation unit (500). Therefore, the side support (143) may rotate the upper support (141) while being rotated by the substrate rotation unit (500).

[0073]

[0074] The above laser beam transmitting plate (150) can be coupled to the upper part of the inner housing (120) to seal the upper part of the inner housing (120). The laser beam transmitting plate (150) can be located at the lower part of the semiconductor substrate (a). The laser beam transmitting plate (150) can be formed of a transparent plate through which a laser beam is transmitted, such as quartz or glass. The laser beam transmitting plate (150) can provide a passage through which a laser beam irradiated from the substrate heating unit (200) is irradiated to the lower surface of the semiconductor substrate (a). The laser beam transmitting plate (150) can be formed to have an area larger than that of the semiconductor substrate (a). For example, the laser beam transmitting plate (150) can be formed to have a diameter or width larger than that of the semiconductor substrate (a).

[0075] The upper surface of the laser beam transmitting plate (150) may be divided into a transmitting substrate region (150a), a transmitting edge region (150b), and a transmitting support region (150c). The regions are regions set in a positional relationship corresponding to the semiconductor substrate (a) located above, the edge ring (130), and the substrate support (140). The transmitting substrate region (150a) may be a region located below the semiconductor substrate (a). In addition, the transmitting edge region (150b) may be a region located below the edge ring (130). In addition, the transmitting support region (150c) may be a region located below the substrate support (140). The regions may have regions that overlap each other.

[0076]

[0077] The above infrared transmitting plate (160) may be formed in a plate shape corresponding to the planar shape of the outer upper wall (111). The infrared transmitting plate (160) may be formed of a transparent material such as quartz or glass. The infrared transmitting plate (160) may be horizontally coupled to the upper inner side of the outer upper wall (111) from the lower side of the upper plate (115). The lower side of the infrared transmitting plate (160) may be positioned above the semiconductor substrate (a) such that it faces the upper surface of the semiconductor substrate (a). The infrared transmitting plate (160) may divide the upper inner side of the outer upper wall (111) into upper and lower spaces. That is, the infrared transmitting plate (160) may be formed by dividing a cooling gas injection space (100c) at the upper side of the chamber upper space (100a). The above cooling gas injection space (100c) can provide a space where cooling gas injected from the cooling gas injection unit (400) flows in and comes into contact with the infrared transmitting plate (160).

[0078] The above infrared transmitting plate (160) can transmit radiant energy generated from the semiconductor substrate (a) during the epitaxy process to the outside. In particular, the infrared transmitting plate (160) can transmit radiant energy having a wavelength including infrared to the outside. In addition, the infrared transmitting plate (160) is maintained at a temperature of 400°C or lower, and preferably, can be maintained at a temperature of 300 to 400°C. Since the infrared transmitting plate (160) is maintained at a temperature of 300 to 400°C, deposition by the process gas can be prevented, thereby preventing an increase in emissivity due to deposition. In addition, since the emissivity of the infrared transmitting plate (160) does not increase with the number of epitaxy processes, the difference in deposition temperatures between the semiconductor substrates (a) on which the process is performed can be reduced. Here, the process gas can vary depending on the type of heat treatment process. For example, in the above epitaxial process, process gases such as SiH4, SiH2Cl2, SiHCl3, or SiCl4 can be used. When the temperature of the cooling gas is 400°C or lower, chemical vapor deposition can be significantly reduced. In addition, since the emissivity of the infrared transmitting plate (160) does not increase with the number of heat treatment processes, the process temperature difference between the semiconductor substrates (a) on which the process is performed can be reduced.

[0079]

[0080] The substrate heating unit (200) may include an element array plate (210) and a VCSEL module (220). As illustrated in FIG. 5, the substrate heating unit (200) may be formed by arranging a plurality of VCSEL modules (220) in the x and y directions on the upper surface of the element array plate (210).

[0081] The substrate heating unit (200) may be positioned at the bottom of the laser beam transmitting plate (150) inside the internal housing (120) of the process chamber (100). The substrate heating unit (200) may irradiate a laser beam to the lower surface of the semiconductor substrate (a) through the laser beam transmitting plate (150).

[0082] The substrate heating unit (200) may have an upper surface divided into a heating substrate region (200a), a heating edge region (200b), and a heating support region (200c). The heating substrate region (200a), the heating edge region (200b), and the heating support region (200c) are regions set in a positional relationship corresponding to the semiconductor substrate (a) located above, the edge ring (130), and the substrate support (140), respectively. In addition, the heating substrate region (200a), the heating edge region (200b), and the heating support region (200c) may be regions corresponding to the transparent substrate region (150a), the transparent edge region (150b), and the transparent support region (150c), respectively. The heating substrate region (200a) may be a region located below the semiconductor substrate (a). In addition, the heating edge region (200b) may be a region located at the bottom of the edge ring (130). In addition, the heating support region (200c) may be a region located at the bottom of the substrate support (140). The regions may have regions that overlap each other.

[0083]

[0084] The above-described element array plate (210) may be formed in a plate shape having a predetermined area and thickness. The element array plate (210) may preferably be formed with an area corresponding to a predetermined width from the inner peripheral surface of the semiconductor substrate (a), the edge ring (130), and the upper support (141) to the outer surface. The upper surface of the element array plate (210) may be divided into a heating substrate area (200a), a heating edge area (200b), and a heating support area (200c) as mentioned above. The element array plate (210) may be formed of a thermally conductive ceramic material or a metal material. The element array plate (210) may function to dissipate heat generated from the VCSEL module (220).

[0085]

[0086] The VCSEL module (220) may include a device substrate (221), a VCSEL device (223), an electrode terminal (225), and a cooling block (227). A plurality of VCSEL modules (220) may be arranged in a grid shape on the upper surface of the device array plate (210). The VCSEL modules (220) may be arranged entirely in a heating substrate area (200a), a heating edge area (200b), and a heating support area (200c) on the upper surface of the device array plate (210). The VCSEL modules (220) may be arranged so that a laser beam is irradiated from the inner peripheral surface of the semiconductor substrate (a), the edge ring (130), and the upper support (141) to an area of ​​a predetermined width outward. The above VCSEL module (220) can heat a semiconductor substrate (a), an edge ring (130), and a portion of the upper support (141) with a laser beam emitted from the VCSEL element (223).

[0087] The above VCSEL module (220) is formed by arranging a plurality of VCSEL elements (223) in the x-axis direction and the y-axis direction on the upper surface of the element substrate (221). When the VCSEL module (220) is arranged in the y-axis direction, the terminal area (221b) located on the front side and the terminal area (221b) located on the rear side of the adjacent VCSEL module (220) can be positioned adjacent to each other in the x-axis direction. In the VCSEL module (220), the element areas (221a) and the terminal areas (221b) can be arranged in a straight line in the x-axis direction, and the element areas (221a) and the terminal areas (221b) can be arranged alternately in the y-axis direction.

[0088] The above-described device substrate (221) may be formed as a general substrate used for mounting electronic devices. The device substrate (221) may be divided into a device region (221a) on which a plurality of VCSEL devices (223) are mounted, and a terminal region (221b) on which terminals are mounted. The device region (221a) may be mounted with a plurality of VCSEL devices (223) arranged in a grid shape. The terminal region (221b) is positioned in contact with the device region (221a) and may have a plurality of terminals mounted thereon.

[0089] The above VCSEL element (223) is formed in multiple numbers by being arranged in the x-axis direction and the y-axis direction on the upper surface of the element substrate (221). The VCSEL element (223) can irradiate a laser beam of a single wavelength of 940 nm. Since the VCSEL element (223) emits a high-power laser beam, it can increase the temperature rise rate of the semiconductor substrate (a) compared to a conventional halogen lamp, and its lifespan is also relatively long.

[0090] The VCSEL element (223) may be formed by arranging a plurality of micro-emitters in the x-axis direction and the y-axis direction. Although not specifically illustrated, the VCSEL element (223) may be formed by including a light-emitting frame (not illustrated) for fixing the micro-emitter and a power line (not illustrated) for supplying current to the micro-emitter. The VCSEL element (223) may be formed so that the same current is applied to all of the micro-emitters. In addition, the VCSEL element (223) may be formed so that different powers are applied to each micro-emitter.

[0091] The above electrode terminal (225) may be formed in multiple numbers in the terminal area (221b) of the element substrate (221). The electrode terminal (225) includes a + terminal and a - terminal and may be electrically connected to the VCSEL element (223). Although not specifically illustrated, the electrode terminal (225) may be electrically connected to the VCSEL element (223) in various ways. The electrode terminal (225) may supply current required to drive the VCSEL element (223).

[0092] The cooling block (227) may be formed with a plane shape corresponding to the plane shape of the device substrate (221) and a predetermined height. The cooling block (227) may be formed of a thermally conductive ceramic material or a metal material. The cooling block (227) may be bonded to the lower surface of the device substrate (221) by a separate adhesive layer. The cooling block (227) may release heat generated from the VCSEL element (223) mounted on the surface of the device substrate (221) downward. Therefore, the cooling block (227) may cool the device substrate (221) and the VCSEL element (223). The unexplained reference numeral 226 may be an adhesive layer bonding the device substrate (221) and the cooling block (227).

[0093] In addition, the cooling block (227) may have a cooling channel (not shown) formed therein through which cooling water flows. The cooling channel may have an inlet and an outlet formed on the lower surface, and may be formed as channels of various shapes within the cooling block (227).

[0094]

[0095] In other embodiments, the above substrate heating unit (200) may be formed into a VCSEL module (220) in various shapes depending on the shape in which the VCSEL element (223) and the electrode terminal (225) are arranged on the upper surface of the element substrate (221).

[0096] According to another embodiment of the present invention, a VCSEL module (220), as shown in FIG. 5, may be formed in an overall square or rectangular shape. The VCSEL module (220) may have a device region (221a) formed in a rectangular shape with an overall width and a predetermined length, and a terminal region (221b) may be formed entirely at the front or rear end of the device region (221a). In addition, the terminal region (221b) may be formed to have a shorter length than the device region (221a).

[0097] The above substrate heating unit (200) can be arranged so that when the VCSEL module (220) is arranged in the y-axis direction on the element array plate (210), the terminal area (221b) located at the front end and the element area (221a) of the sub-irradiation module (220) located at the front side are in contact.

[0098] In this case, the substrate heating unit (200) may have the element area (221a) and terminal area (221b) of the VCSEL module (220) arranged continuously in the x-axis direction, and the element area (221a) and terminal area (221b) may be arranged alternately in the y-axis direction.

[0099] In addition, the VCSEL module (220) according to another embodiment of the present invention may be formed in an approximately rectangular shape, as shown in FIG. 6. In addition, the VCSEL module (220) may be formed in a rectangular shape, with a terminal region (221b) having a width corresponding to a cut of a predetermined length and a total width at one end of the front end and one end of the rear end in the rectangular shape. That is, the terminal region (221b) may be formed with a width corresponding to a cut of the width of the sub-element module. The terminal regions (221b) may be positioned diagonally from each other in the rectangle. The VCSEL module (220) may be formed in an area excluding the terminal region (221b) as an element region (221a).

[0100] In addition, the VCSEL module (220) may be formed with one side and the other side having a straight shape. The length of the terminal region (221b) may be formed to be shorter than the length of the element region (221a). The terminal region (221b) may be formed with the same length on the front and rear sides.

[0101] When the VCSEL module (220) is arranged in the y-axis direction on the element array plate (210), a terminal area (221b) located on one side of the front end may be positioned adjacent to an element area (221a) located on one side of the rear end of the VCSEL module (220) located on the front end. When the VCSEL module (220) is arranged in the y-axis direction, a terminal area (221b) located on the other side of the rear end may be positioned adjacent to an element area (221a) located on the other side of the front end of the VCSEL module (220) located on the front end.

[0102] In addition, the VCSEL module (220) may have the element regions (221a) and terminal regions (221b) alternately arranged in the x-axis direction in a region where the terminal region (221b) is formed based on the y-axis direction, and the element regions (221a) may be arranged in a straight line in the x-axis direction in a region where the terminal region (221b) is not formed.

[0103] Accordingly, the substrate heating unit (200) has a region in which the element region (221a) and the terminal region (221b) are alternately arranged in the x-axis direction and a region in which only the element region (221a) is arranged, and the element region (221a) and the terminal region (221b) can be alternately arranged in the y-axis direction.

[0104]

[0105] The beam guide part (300) may be formed in a straight shape and a bar shape having a predetermined length and diameter. In addition, the beam guide part (300) may be formed to have a height smaller than the height between the upper surface of the laser beam transmitting plate (150) and the lower surface of the edge ring (130). The beam guide part (300) may be formed so that its central axis forms a straight line and is positioned in an inclined direction with respect to a horizontal plane. In this case, the beam guide part (300) may be formed so that its upper surface and lower surface form a horizontal plane and its central axis forms an angle smaller than 90 degrees with respect to the lower surface. The beam guide part (300) may be positioned so that its lower surface is positioned in the transmitting support area (150c) of the laser beam transmitting plate (150) and its upper surface is adjacent to the lower surface of the edge ring (130) corresponding to the transmitting edge area (150b). Accordingly, the angle between the upper surface and the central axis of the beam guide portion (300) can be determined according to the height and horizontal positional relationship between the lower surface of the transmission support area (150c) and the edge ring (130). The beam guide portion (300) can be formed of a quartz material.

[0106] The beam guide portion (300) may be formed in a cylindrical shape with a circular horizontal cross-section. In addition, the beam guide portion (300) may be formed in a polygonal shape, such as a square, pentagon, hexagon, or octagon, with a horizontal cross-section. In addition, the beam guide portion (300) may be formed in a shape with a hollow interior. In addition, the beam guide portion (300) may be formed in a tubular shape with a hollow interior and open top and bottom.

[0107] The beam guide part (300) may be formed so that the diameter or width of the upper surface is the same as or smaller than the width of the edge ring (130). Here, the width of the edge ring (130) may be a distance corresponding to the difference between the outer diameter and the inner diameter of the edge ring (130). Since the beam guide part (300) irradiates the laser beam from the upper surface to the lower surface of the edge ring (130), the diameter of the upper surface may be formed so that the diameter of the upper surface corresponds to the lower surface of the edge ring (130). In addition, the beam guide part (300) may be formed so that the lower surface has the same area as or a larger area than the upper surface. However, the beam guide part (300) may be formed so that the diameter or width of the lower surface is smaller than the width of the heating support region (200c). In addition, the beam guide part (300) may be formed so that the upper surface and the lower surface have different diameters or widths.

[0108] The beam guide unit (300) can irradiate the laser beam incident from the VCSEL module (220) located at the bottom to the lower surface of the edge ring (130). The beam guide unit (300) can guide the laser beam incident inside through the lower surface to the upper surface while internally reflecting the laser beam, and can emit the laser beam to the lower surface of the edge ring (130) through the upper surface. Therefore, the beam guide unit (300) can additionally heat the edge ring (130) by focusing the laser beam of the VCSEL module (220) to the lower surface of the edge ring (130) and irradiating it. Since the edge ring (130) is additionally heated by the laser beam, the heat of the semiconductor substrate (a) emitted through the edge ring (130) can be reduced. Therefore, the heating temperature of the semiconductor substrate (a) can be the same or similar from the central region to the outer peripheral region.

[0109]

[0110] The above beam guide portion (300) can be formed in various shapes in other embodiments.

[0111] According to another embodiment of the present invention, a beam guide unit (300), referring to FIG. 7, may be formed in a bar shape, and its central axis may form a vertical straight line at the bottom and an inclined straight line at the top. At this time, the inclined straight line at the top may form an angle greater than 90 degrees with the vertical straight line. However, even in this case, the lower surface of the beam guide unit (300) may be positioned above the transmission support region (150c), and the upper surface may be positioned adjacent to the lower surface of the edge ring (130). Therefore, the beam guide unit (300) may allow a laser beam incident through the lower surface to be irradiated to the lower surface of the edge ring (130).

[0112] In addition, the beam guide unit (300) according to another embodiment of the present invention, referring to FIG. 8, may be formed in a bar shape and have a central axis having a vertical straight line at the bottom, an inclined straight line in the middle, and a vertical straight line at the top. However, even in this case, the lower surface of the beam guide unit (300) may be positioned above the transmission support area (150c), and the upper surface may be positioned adjacent to the lower surface of the edge ring (130). Accordingly, the beam guide unit (300) may allow a laser beam incident through the lower surface to be irradiated to the lower surface of the edge ring (130).

[0113]

[0114] The above cooling gas injection unit (400) may include an injection housing (410) and a gas injection plate (420). The cooling gas injection unit (400) may spray cooling gas onto the upper surface of the infrared transmitting plate (160) to cool the infrared transmitting plate (160). The cooling gas may be nitrogen (N2) gas, argon (Ar) gas, or compressed cooling air.

[0115] The above-described injection housing (410) may include a cooling gas inlet hole (411). The injection housing (410) may be formed in a cylindrical shape with a hollow interior and an open bottom. The injection housing (410) may be formed in a shape corresponding to the upper plate (115) of the outer housing (110) in terms of its planar shape. The injection housing (410) may have a cooling gas inlet space (410a) formed therein into which cooling gas is introduced.

[0116] The above cooling gas inlet hole (411) may be formed in the shape of a hole penetrating from the outside to the inside, i.e., the cooling gas inlet space (410a), in the upper plate or side plate of the spray housing (410). The cooling gas inlet hole (411) may be formed in one or more pieces depending on the plane area of ​​the spray housing (410). The cooling gas inlet hole (411) may provide a path for the cooling gas to flow into the cooling gas inlet space (410a).

[0117] The above gas injection plate (420) may include a gas injection hole (421). The gas injection plate (420) is formed in a plate shape and may be formed with an area corresponding to the plane area of ​​the injection housing (410). The gas injection plate (420) may be coupled to the lower portion of the injection housing (410) to shield the lower portion of the injection housing (410).

[0118] The above gas injection hole (421) is formed by penetrating from the upper surface to the lower surface of the gas injection plate (420). The gas injection hole (421) can connect the cooling gas inflow space (410a) and the upper through hole (115a) of the upper plate (115). The gas injection hole (421) can inject cooling gas introduced from the outside into the cooling gas inflow space (410a) to the inside of the upper through hole (115a) and the upper surface of the infrared transmitting plate (160).

[0119] The above gas injection holes (421) may be formed in multiple numbers spaced apart from each other on the gas injection plate (420). The gas injection holes (421) may evenly inject cooling gas onto the upper surface of the infrared transmitting plate (160) on the entire surface. Accordingly, the gas injection plate (420) may more evenly cool the infrared transmitting plate (160) below.

[0120]

[0121] The substrate rotation unit (500) may include an inner rotation means (510) and an outer rotation means (520). The substrate rotation unit (500) may rotate the substrate support (140) horizontally in a non-contact manner. More specifically, the inner rotation means (510) may be coupled to the lower portion of the substrate support (140) in the chamber lower space (100b) of the process chamber (100). In addition, the outer rotation means (520) may be positioned opposite the inner rotation means (510) on the outside of the process chamber. The outer rotation means (520) may rotate the inner rotation means (510) in a non-contact manner using magnetic force.

[0122] The inner rotation means (510) may be formed with a structure similar to a rotor of a motor. For example, the inner rotation means (510) may be formed with a magnetic structure having an overall ring shape and in which N and S poles are alternately formed along the circumferential direction. The inner rotation means (510) may be coupled to a side support member (143) of the substrate support member (140). At this time, the inner rotation means (510) may be positioned spaced upward from the upper portion of the lower plate (117). Meanwhile, the inner rotation means (510), although not specifically illustrated, may be supported by a separate support member to prevent vibration or to enable smooth rotation during rotation. For example, the inner rotation means (510) may be supported by a support bearing or roller at the bottom.

[0123] The outer rotation means (520) may be formed in a structure similar to a stator of a motor. For example, the outer rotation means (520) may include a core formed in a ring shape and a conductor wound around the core. The outer rotation means (520) may rotate the inner rotation means (510) with a magnetic force generated by power supplied to the conductor. The outer rotation means (520) may be positioned on the outside of the outer housing (110) so as to face the inner rotation means (510) with respect to the outer housing (110). That is, the outer rotation means (520) may be positioned on the outside with respect to the outer housing (110) at the same height as the inner rotation means (510).

[0124]

[0125] The following describes the operation of a semiconductor manufacturing apparatus for an epitaxial process according to one embodiment of the present invention. The following describes the operation of a beam guide unit constituting the semiconductor manufacturing apparatus for an epitaxial process.

[0126] Fig. 9 is a simulation result of the guidance direction and irradiation density of the laser beam of the beam guide bar of Fig. 1. Fig. 10 is a simulation result of the guidance direction and irradiation density of the laser beam of the beam guide bar of Fig. 7. Fig. 11 is a simulation result of the guidance direction and irradiation density of the laser beam of the beam guide bar of Fig. 8. Fig. 12 is a simulation result of the guidance direction and irradiation density of the laser beam in the absence of the beam guide bar.

[0127] As shown in Fig. 9, the beam guide unit (300) can focus the laser beam irradiated from the VCSEL module (220) located at the bottom and guide it toward the upper surface. The beam guide unit (300) can guide the laser beam irradiated from the VCSEL module (220) located at the heating support area (200c) toward the lower surface of the edge ring (130).

[0128] The above laser beam may be irradiated from the VCSEL module (220), then incident internally through the lower surface of the beam guide unit (300), and then guided upwardly through internal reflection from the side. In addition, the laser beam may not be irradiated externally through the side surface of the beam guide unit (300), but may be guided upwardly. The laser beam may be focused and emitted through the upper surface, and may be irradiated to the lower surface of the edge ring (130) to heat the edge ring (130).

[0129] The edge ring (130) can be heated by a laser beam irradiated from a VCSEL module (220) located in a heating edge region (200b) and a VCSEL module (220) located in a heating support region (200c). That is, the edge ring (130) can be additionally heated by a laser beam irradiated from a VCSEL module (220) located in a heating support region (200c). Therefore, since the edge ring (130) is irradiated with more laser beams than the semiconductor substrate (a) and the substrate support (140), the heat of the semiconductor substrate (a) may not be irradiated through the edge ring (130) even if the heat of the edge ring (130) is radiated through the substrate support (140). Since the heat from the outside of the semiconductor substrate (a) is not dissipated through the edge ring (130), the temperatures of the central region and the outside region can be heated evenly.

[0130] As shown in FIGS. 10 and 11, the above beam guide unit (300) can additionally guide the laser beam irradiated from the VCSEL module (220) located in the heating support area (200c) to the lower surface of the edge ring (130), although there is some difference in the density and area of ​​the laser beam guided to the lower surface of the edge ring (130) depending on the shape.

[0131] In contrast, the laser beam can be irradiated while being dispersed in a predetermined angular range from the upper surface of the VCSEL module (220) when there is no beam guide unit (300) as shown in FIG. 12. The laser beam irradiated from the VCSEL module (220) is irradiated while being dispersed throughout the irradiation range and cannot be irradiated intensively to a required area. The laser beam irradiated from the VCSEL module (220) located in the heating support area (200c) is not irradiated intensively to the lower surface of the edge ring (130) and cannot additionally heat the edge ring (130) efficiently.

[0132] The above semiconductor manufacturing device can uniformly heat the entire semiconductor substrate (a). Therefore, although not specifically illustrated, it was confirmed that the semiconductor manufacturing device (10) for the epitaxial process uniformly deposits a Si thin film in the inner and outer regions on the upper surface of the semiconductor substrate (a). Since the inner and outer regions of the semiconductor substrate (a) are uniformly heated during the deposition process of the Si thin film, it is confirmed that the Si thin film is uniformly deposited. In contrast, in the existing semiconductor manufacturing device (10) for the epitaxial process, the outer region of the semiconductor substrate (a) is heated at a relatively low temperature, so the thickness of the deposited Si thin film can be thinner than that of the inner region.

[0133]

[0134] The embodiments disclosed in this specification are merely the most preferable embodiments selected from among various possible examples to help those skilled in the art understand, and the technical idea of ​​this invention is not necessarily limited or restricted to these embodiments, and various changes, additions, and modifications are possible within the scope that does not depart from the technical idea of ​​the present invention. Of course, implementation of other equivalent embodiments is possible.

Claims

1. A process chamber having an edge ring that supports the outer lower surface of the semiconductor substrate so that the lower surface of the semiconductor substrate is exposed, a substrate support that supports the outer lower surface of the edge ring, and a laser beam transmitting plate positioned below the semiconductor substrate; A substrate heating unit that irradiates the laser beam of the VCSEL module through the laser beam transmitting plate to the semiconductor substrate and the lower surface of the edge ring, and It includes a beam guide section that irradiates the laser beam of the VCSEL module to the lower surface of the edge ring, The above substrate heating section is divided into a heating substrate region where the VCSEL module is located, a heating edge region, and a heating support region. A semiconductor manufacturing device for an epitaxial process, characterized in that the beam guide unit guides and irradiates the laser beam irradiated from the VCSEL module located in the heating support area to the lower surface of the edge ring.

2. In paragraph 1, The above edge ring extends outward from the upper portion of the inner surface and is formed with an inner diameter smaller than the outer diameter of the semiconductor substrate. The above substrate support A semiconductor manufacturing device for an epitaxial process, characterized by including an upper support member having an edge ring support hole formed with an inner diameter smaller than an outer diameter of the edge ring, and an edge ring support step formed with an inner diameter larger than an outer diameter of the edge ring and extending outward from an upper portion of an inner surface of the edge ring support hole.

3. In paragraph 1, A semiconductor manufacturing device for an epitaxial process, characterized in that the edge ring has an emissivity per unit area equal to or greater than that of the semiconductor substrate with respect to the horizontal plane.

4. In paragraph 1, The above laser beam transmitting plate has a transmitting substrate region, a transmitting edge region, and a transmitting support region corresponding to the heating substrate region, the heating edge region, and the heating support region, A semiconductor manufacturing device for an epitaxial process, characterized in that the beam guide bar has a lower surface positioned above the transmission support area and an upper surface positioned below the edge ring.

5. In paragraph 4, A semiconductor manufacturing device for an epitaxial process, characterized in that the beam guide bar has upper and lower surfaces that are horizontal planes, a central axis that forms a straight line, and the central axis forms an angle less than 90˚ with the lower surface.

6. In paragraph 4, A semiconductor manufacturing device for an epitaxial process, characterized in that the beam guide bar is formed so that its central axis forms a vertical straight line at the bottom and an inclined straight line at the top, and the vertical straight line and the inclined straight line form an angle greater than 90˚.

7. In paragraph 4, A semiconductor manufacturing device for an epitaxial process, characterized in that the beam guide bar is formed so that its central axis forms a vertical straight line at the bottom, an inclined straight line at the middle, and a vertical straight line at the top.

8. In paragraph 1, A semiconductor manufacturing device for an epitaxial process, characterized in that the above beam guide bar is formed of quartz.

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