Optoelectronic component

Abstract

An optoelectronic component (1) comprises a housing (2) with a carrier (3) and also comprises a frame (4), a potting material (12) and at least one optoelectronic semiconductor chip (7) designed for the emission of electromagnetic radiation. The frame (4) is arranged on a mounting surface (5) of the carrier (3) and, with the carrier (3), encloses a cavity (6). The optoelectronic semiconductor chip (7) and the potting material (12) are arranged in the cavity (6), and the optoelectronic semiconductor chip (7) is embedded in the potting material (12). The potting material (12) protrudes from the cavity (6) along a direction perpendicular to the mounting surface (5).

Description

[0001] OPTOELECTRONIC COMPONENT

[0002] DESCRIPTION

[0003] The present invention relates to an optoelectronic component.

[0004] This patent application claims priority from German patent application 10 2023 134 389 . 0 , the disclosure of which is hereby incorporated by reference.

[0005] Optoelectronic components with optoelectronic semiconductor chips that are designed to emit light in the colors red, green and blue (RGB) are known from the prior art. If a plurality of optoelectronic semiconductor chips that are designed to emit light in different colors are arranged laterally next to one another in a component that emits on five sides, this results in inhomogeneous radiation behavior in at least two directions because the distances between the optoelectronic semiconductor chips and the housing edges vary depending on the side. For example, the wavelength of the emitted electromagnetic radiation depends on an emission angle and / or a lateral position. This applies both to a linear and a triangular arrangement of the optoelectronic semiconductor chips.

[0006] RGB components exist in different variants. For example, optoelectronic components without a cavity with inhomogeneous or asymmetric radiation behavior due to the different distances between the optoelectronic semiconductor chips and the package edges are known. Components with a cavity that extends up to a top edge of the package are also known. In this case, there is no laterally directed emission of electromagnetic radiation by the optoelectronic component. A mixing of electromagnetic radiation from different wavelength ranges can occur in various ways. For example, it is known to bring about a mixing in the package by using a particularly large package, for example by using a package with a particularly high cavity and a particularly large cavity volume.Another way to achieve color mixing is to arrange a plurality of optoelectronic semiconductor chips, which have different emission spectral ranges, vertically one above the other.

[0007] An object of the present invention is to provide an improved optoelectronic component. This object is achieved by an optoelectronic component having the features of the independent claim. Advantageous further developments are specified in the dependent claims.

[0008] An optoelectronic component comprises a housing with a carrier and a frame, at least one encapsulation material, and at least one optoelectronic semiconductor chip configured to emit electromagnetic radiation. The frame is arranged on a mounting surface of the carrier and, together with the carrier, encloses a cavity. The optoelectronic semiconductor chip and the encapsulation material are arranged in the cavity, and the optoelectronic semiconductor chip is embedded in the encapsulation material. The encapsulation material protrudes from the cavity in a direction perpendicular to the mounting surface.

[0009] The encapsulation material therefore projects beyond an upper side of the frame facing away from the mounting surface of the carrier or is arranged at least partially above the frame with respect to the mounting surface of the carrier. In other words, the cavity does not extend to an upper edge of the optoelectronic component. The encapsulation material has a encapsulation surface and encapsulation side surfaces, wherein the encapsulation surface is arranged above the frame with respect to the mounting surface of the carrier and the encapsulation side surfaces are arranged at least partially above the frame with respect to the mounting surface of the carrier. The frame therefore does not project to an upper edge of the optoelectronic component facing away from the carrier. The encapsulation side surfaces are formed by singulating a housing body composite during production of the optoelectronic component.

[0010] The optoelectronic semiconductor chip is designed to emit electromagnetic radiation perpendicular and / or parallel at different azimuthal angles in relation to the mounting surface of the carrier. The optoelectronic semiconductor chip therefore has a top side and side surfaces which can be designed to emit electromagnetic radiation. The emission can, for example, occur exclusively at the top side. In this case, the optoelectronic semiconductor chip is designed as a surface emitter. The emission can alternatively or additionally also occur at the side surfaces. In the case of exclusive emission at the side surfaces, the optoelectronic semiconductor chip is designed as an edge emitter. However, laterally directed emission can also emanate from the top side, since a radiation lobe is actually emitted which also has components parallel to the mounting surface.

[0011] The fact that the optoelectronic semiconductor chip is designed to emit electromagnetic radiation on its upper side and / or on its side surfaces does not mean that the electromagnetic radiation is generated in these areas, but merely that electromagnetic radiation already generated in the interior of the optoelectronic semiconductor chip, in the so-called active area, is emitted.

[0012] The optoelectronic semiconductor chip can be configured to emit electromagnetic radiation in any wavelength range. It can be configured, for example, as a light-emitting diode (LED). Alternatively, the optoelectronic semiconductor chip can also be configured as a laser diode.

[0013] Because the encapsulation material protrudes from the cavity, the optoelectronic component not only emits electromagnetic radiation perpendicular to the mounting surface of the carrier, but also emits electromagnetic radiation laterally. In the optoelectronic component, the emission occurs in the region of the encapsulation surface and in the region of sections of the encapsulation side surfaces of the encapsulation material located above the frame, each of which protrudes from the cavity.

[0014] Since the optoelectronic semiconductor chip is arranged in the cavity, direct lateral emission of electromagnetic radiation by the optoelectronic component can be prevented. However, it is enabled after reflections from the frame in regions above the frame. The frame can be designed to reflect the electromagnetic radiation emitted by the optoelectronic semiconductor chip or to act as a reflector to enhance this effect.

[0015] Typically, the housing of the optoelectronic component has a rectangular base area in cross-section parallel to the mounting surface, even though the housing can in principle have any base area. Since the potting material protrudes from the cavity, electromagnetic radiation can be emitted in a total of five directions, wherein the electromagnetic radiation emitted by the optoelectronic component advantageously has a particularly homogeneous radiation characteristic, since the reflections on the frame homogenize an intensity distribution, for example an angle-dependent intensity of emitted electromagnetic radiation. In one embodiment, the frame completely delimits the cavity laterally. The frame can, for example, have four walls which, for example, delimit the cavity in a rectangular manner. A cavity delimited in this way can be referred to as a four-sided cavity.However, the frame can have any number of walls. For example, the frame can have three walls or just one. If the frame has only one wall, this wall can, for example, enclose the cavity in a circular ring.

[0016] A cavity that is completely enclosed laterally by the frame can prevent asymmetric radiation behavior of the optoelectronic component by suppressing direct lateral emission, the light is first reflected at the frame and only then leaves the optoelectronic component in the area above the frame.

[0017] In one embodiment, the frame laterally defines sections of the cavity. In other words, the frame has at least one recess. For example, it is possible for the frame to have only three walls, whereby the cavity is open to one side in a housing with a rectangular base area. In this case, direct lateral emission in the region of the frame, i.e., between the carrier and the section of the potting material protruding from the cavity, is also possible, since the potting material is exposed on one side of the housing in this case.

[0018] In one embodiment, the frame has walls which are of different heights in relation to the support. Alternatively or additionally, the frame has at least one wall with an upper edge which is curved and faces away from the support. The frame can therefore have walls of different heights and / or walls which are differently shaped or which are curved or arched at the upper edge. In one embodiment, the frame has two opposing walls. The potting material is exposed between the end faces of the opposing walls of the frame. A cavity which is delimited by the frame in this way can also be referred to as a two-sided cavity. In this case, the frame has two opposing recesses which are formed between the end faces of the opposing walls.Between the end faces of the opposing walls, a directly laterally directed emission of electromagnetic radiation can occur through the optoelectronic component. This may be desirable in addition to a homogeneous emission perpendicular to the mounting surface.

[0019] In one embodiment, the optoelectronic component comprises a plurality of optoelectronic semiconductor chips configured to emit electromagnetic radiation, arranged in the cavity, and embedded in the encapsulation material. Primarily, the light emitted directly laterally by optoelectronic semiconductor chips located closer to the frame can be substantially completely reflected back into the encapsulation material. Different distances between the optoelectronic semiconductor chips and the frame can thus be compensated for, whereby the optoelectronic component advantageously exhibits a homogeneous radiation behavior.

[0020] In one embodiment, the optoelectronic semiconductor chips are arranged linearly one behind the other along a direction perpendicular to the frame. Advantageously, the light from the optoelectronic semiconductor chips arranged closer to the frame is reflected directly by the frame, thereby homogenizing the radiation pattern.

[0021] In one embodiment, the optoelectronic semiconductor chips are designed to emit electromagnetic radiation from different spectral ranges. In particular, for example, a total of three optoelectronic semiconductor chips can be provided which are designed to emit light in the colors red, green and blue (RGB). Color mixing already takes place in the cavity. In this way, a homogeneous color distribution of the light emitted by the optoelectronic component can be achieved in up to five directions, depending on a number of walls of the frame. The optoelectronic component can in this case be referred to as an RGB LED. Due to the homogeneous radiation, it can also be referred to as a 360° RGB LED.

[0022] It should be noted that, in this description, electromagnetic radiation is also referred to as light, without, however, restricting the spectral range to visible light. The term "light" is therefore understood to refer to electromagnetic radiation that may also contain wavelength components outside the visible spectrum.

[0023] In one embodiment, the encapsulation material is at least partially transparent to the electromagnetic radiation emitted by the at least one optoelectronic semiconductor chip and has embedded scattering particles. Advantageously, the scattering particles can not only reflect electromagnetic radiation from the frame but also scatter electromagnetic radiation in the encapsulation, thereby achieving even more homogeneous radiation characteristics. The scattering particles can comprise, for example, silicon oxide or titanium oxide.

[0024] The frame can also have additional scattering particles in order to be designed as a reflector. The concentration of additional scattering particles in the frame can be significantly higher than the concentration of scattering particles in the potting material. Alternatively or in addition to additional scattering particles, the frame can have a reflective coating, for example a metallic coating, in order to be designed as a reflector. The optional reflective coating is arranged on an inner wall of the frame. In one embodiment, the potting material has a potting surface that protrudes from the cavity and is arranged parallel to the carrier. A scattering layer is arranged on the potting surface. However, the potting surface does not necessarily have to be arranged parallel to the carrier or to the mounting surface of the carrier. A scattering layer can, for example, comprise a plastic with embedded, additional scattering particles.The additional scattering particles may, for example, comprise titanium oxide or aluminum oxide. A concentration of additional scattering particles in the scattering layer may, for example, be greater than a concentration of scattering particles in the potting material, but smaller than a concentration of additional scattering particles in the frame.

[0025] Advantageously, the scattering layer prevents excessive, direct emission perpendicular to the mounting surface or the carrier, and provides additional mixing of the light reflected back into the encapsulation by the scattering layer. The scattering layer can be arranged not only on the encapsulation surface, but also on the exposed encapsulation side surfaces protruding from the cavity, and optionally also on the frame. In this case, the scattering layer can also be referred to as a scattering cap.

[0026] In one embodiment, electrical chip contact pads are arranged at a bottom of the cavity. The optoelectronic semiconductor chips are electrically connected to a common chip contact pad provided as an anode or a common chip contact pad provided as a cathode.

[0027] A display device comprises a plurality of optoelectronic components arranged regularly next to one another according to one of the embodiments. The optoelectronic components can be arranged, for example, on a printed circuit board (PCB) of the display device. The display device can also be referred to as a display. The above-described properties, features, and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understandable in connection with the following description of the exemplary embodiments, which are explained in more detail in conjunction with the drawings.

[0028] Fig. 1: an optoelectronic component according to a first embodiment in a side sectional view and a plan view;

[0029] Fig. 2: an optoelectronic component according to a second embodiment in a side sectional view and a plan view;

[0030] Fig. 3: an optoelectronic component according to a third embodiment in a side view;

[0031] Fig. 4: the optoelectronic component of Fig. 2 in operation in a side sectional view;

[0032] Fig. 5: the optoelectronic component according to Fig. 1 with a first wiring of optoelectronic semiconductor chips in a plan view;

[0033] Fig. 6: the optoelectronic component according to Fig. 1 with a second wiring of the optoelectronic semiconductor chips in a plan view;

[0034] Fig. 7: the optoelectronic component according to Fig. 1 with a third wiring of the optoelectronic semiconductor chips in a plan view;

[0035] Fig. 8: the optoelectronic component according to Fig. 1 with a fourth wiring of the optoelectronic semiconductor chips in a top view; Fig. 9: an optoelectronic component according to Fig. 5 in a bottom view;

[0036] Fig. 10: an optoelectronic component according to Figs. 6 to 8 in a bottom view; and

[0037] Fig . 11 : a display device with several optoelectronic components .

[0038] Fig. 1 schematically shows an optoelectronic component 1 according to a first embodiment in a lateral sectional view and a partially transparent plan view. A sectional plane along which the sectional view is shown is indicated in the plan view by a dashed line.

[0039] The optoelectronic component 1 has a housing 2. The housing 2 has a carrier 3 and a frame 4.

[0040] The carrier 3 has a mounting surface 5. The frame 4 is arranged on the mounting surface 5 of the carrier 3. The carrier 3 can also be referred to as a substrate 3. The carrier 3 comprises, for example, silicon. However, the carrier 3 can also comprise a different material. The carrier 3 is, for example, rectangular. As a result, the optoelectronic component 1 has a rectangular cross-section parallel to the mounting surface 5. However, the carrier 3 can also be shaped differently, as a result of which the optoelectronic component 1 can have a different cross-section.

[0041] The frame 4 has a molding material. For example, the frame 4 has an epoxy resin. However, the frame 4 can also have a different plastic, for example silicone. The frame 4 can be arranged on the mounting surface of the carrier, for example by a molding process, for example by injection molding, in particular by film-assisted transfer molding (FAM for short). The housing 2 can also be monolithic, i.e. the carrier 3 and the frame 4 can be manufactured as a composite.

[0042] The carrier 3 and the frame 4 enclose a cavity 6. Inner walls of the frame 4, which face the cavity 6, are designed, for example, such that the cavity

[0043] 6 is open towards a side of the frame 4 facing away from the mounting surface 5 in order to form a reflector structure. However, the inner walls of the frame 4 can also be oriented perpendicular to the mounting surface 5, for example. Alternatively, they can also be curved.

[0044] In the cavity 6, three optoelectronic semiconductor chips 7 are arranged, for example. However, the optoelectronic component 1 can have any number of optoelectronic semiconductor chips 7. For example, the optoelectronic semiconductor chips 7 are arranged linearly next to one another. However, the optoelectronic semiconductor chips 7 can also be arranged differently, for example in a triangular arrangement. The optoelectronic semiconductor chips

[0045] 7 are, for example, square in shape or have a square cross-section parallel to the mounting surface 5. However, the optoelectronic semiconductor chips 7 can also have a different shape.

[0046] The optoelectronic semiconductor chips 7 are designed to emit electromagnetic radiation. The optoelectronic semiconductor chips 7 have top sides 8, bottom sides 9 opposite the top sides 8, and side surfaces 10. The optoelectronic semiconductor chips 7 are arranged with their bottom sides 9 on the mounting surface 5 of the carrier 3. The emission of electromagnetic radiation can take place at the top sides 8 and / or the side surfaces 10. By way of example, the optoelectronic semiconductor chips 7 are designed as light-emitting diodes and are each designed to emit light in the colors red, green, and blue, which is why the optoelectronic component 1 can also be referred to as an RGB component.However, the optoelectronic semiconductor chips 7 can be designed to emit electromagnetic radiation from any spectral range, wherein in the case of a plurality of optoelectronic semiconductor chips 7, identical or different optoelectronic semiconductor chips 7 can be provided.

[0047] So that the optoelectronic semiconductor chips 7 can emit different light, they can, for example, have different material systems. Alternatively, the optoelectronic semiconductor chips 7 can comprise wavelength-converting elements. The optoelectronic semiconductor chips 7 can be designed either as thin-film chips or as sapphire chips. Thin-film chips have a layer sequence that is typically deposited on silicon. The spectrum of the emitted light can be adjusted by selecting materials for the layer sequence. Sapphire chips have a sapphire substrate on which silicon and further layer sequences are deposited.

[0048] The optoelectronic semiconductor chips 7 can be electrically connected, for example, by means of bonding wires to chip contact surfaces 11 arranged on the mounting surface 5 and in the cavity 6. Alternatively, the optoelectronic semiconductor chips 7 can be designed as so-called flip chips. In this case, the optoelectronic semiconductor chips 7 have contact pads 9 on their undersides, with which the optoelectronic semiconductor chips 7 can be electrically connected to the chip contact surfaces

[0049] 11 can be arranged, wherein a solder material can be used for the material-locking connection between contact pads and chip contact surfaces 11.

[0050] The optoelectronic component 1 further comprises a potting material 12. The potting material 12 comprises, for example, a silicone, but it may also comprise another material, for example an elastomer. The potting material

[0051] 12 is arranged in the cavity 6. The optoelectronic semiconductor chips 7 are embedded in the encapsulation material 12. The optoelectronic semiconductor chips 7 are completely embedded in the encapsulation material 12, i.e., with the exception of the undersides 9, the top sides 8 and the side surfaces 10 of the optoelectronic semiconductor chips 7 are covered by the encapsulation material 12. The encapsulation material 12 can expediently be designed or configured to be at least partially transparent to the electromagnetic radiation emitted by the optoelectronic semiconductor chips 7. Alternatively or additionally, the encapsulation material 12 has embedded scattering particles. The scattering particles can, for example, comprise silicon dioxide.The optoelectronic component 1 can also have a plurality of encapsulation materials 12, which are arranged, for example, one above the other in the cavity 6, wherein the optoelectronic semiconductor chips 7 are embedded in at least one encapsulation material 12.

[0052] The potting material 12 protrudes from the cavity 6 in a direction perpendicular to the mounting surface 5. The potting material 12 therefore has a section arranged in the cavity 6 and a section protruding from the cavity 6. The potting material 12 has a potting surface 13 arranged parallel to the mounting surface 5 of the carrier 3 and potting side surfaces 14 arranged perpendicular to the mounting surface 5. The potting surface 13 is arranged above the frame 4 with respect to the mounting surface 5. The potting side surfaces 14 are arranged in sections within the cavity 6 and in sections outside the cavity 6, since the potting material 12 protrudes from the cavity 6.

[0053] In the optoelectronic component 1, the frame 4 only partially defines the cavity 6. More precisely, the frame 4 has two opposing walls 15.

[0054] The encapsulation material 12 is exposed between end faces 16 of the opposing walls 15 of the frame 4. Likewise, by way of example, the encapsulation side surfaces 14 are flush with the outer frame walls, whereby the encapsulation side surfaces 14 of the optoelectronic component are formed flat 1. Furthermore, the optoelectronic semiconductor chips 7 are arranged along a direction perpendicular to the walls 15 of the frame 4, which is not absolutely necessary. As a result, however, the optoelectronic semiconductor chips 7 have different distances from the walls 15 of the frame 4.

[0055] Fig. 2 schematically shows an optoelectronic component 1 according to a second embodiment in a side sectional view and a partially transparent top view. A sectional plane along which the sectional view is shown is indicated in the top view by means of a dashed line. The optoelectronic component 1 according to the second embodiment has similarities to the optoelectronic component 1 according to the first embodiment. The following description essentially explains the differences between the optoelectronic component 1 according to Fig. 2 and the optoelectronic component 1 according to Fig. 1. The reference symbols are retained for similar and identical elements.

[0056] In contrast to the optoelectronic component 1 according to Fig. 1, the optoelectronic component 1 according to Fig. 2 has a frame 4 which completely surrounds the cavity 6 laterally. Due to the exemplary rectangular base area of ​​the optoelectronic component 1, the frame 4 has four walls 15 which enclose the cavity 6. In the area of ​​the cavity 6 between the mounting surface 5 and a surface formed by the mounting surface

[0057] In contrast to the embodiment of Fig. 1, the potting material 12 is not exposed on the upper side of the frame 4 facing away from the upper side of the frame 4. The cavity 6 of the embodiment of Fig. 2 can be described as four-sided, while the cavity 6 of the embodiment of Fig. 1 can be described as two-sided.

[0058] Fig. 3 schematically shows an optoelectronic component 1 according to a third embodiment in a side view. The optoelectronic component 1 according to the third embodiment has similarities to the optoelectronic component 1 according to the first embodiment. The reference numerals are retained for similar and identical elements.

[0059] The optoelectronic component 1 according to Fig. 3 has a four-sided cavity 6, i.e. the frame 4 has four walls 15. The walls 15 have different heights with respect to the carrier 3, i.e. with respect to a direction perpendicular to the mounting surface 5. Two opposite walls 15 have, for example, identical heights. In addition, two opposite walls 15 of the frame 4 have, for example, a curved upper edge 29. The upper edges 29 face away from the carrier 3. The different heights and the curved upper edges 29 advantageously make it possible to influence the emission of electromagnetic radiation. For example, in the exemplary embodiment in Fig.3 promotes emission in the direction perpendicular to the walls 15, which have curved upper edges 29, since the potting material 12 is exposed in the region above the curved upper edges 29, i.e. protrudes at least in sections from the cavity 6.

[0060] The optoelectronic components 1 of Figs. 1 to 3 have in common that they each have a scattering layer 18 which is arranged on the potting surface 13. The scattering layer 18 can, for example, comprise silicone and additional embedded scattering particles. The additional scattering particles can, for example, comprise titanium oxide or aluminum oxide. In the transparent plan views of Figs. 1 and 2, the scattering layers 18 are each transparent and are therefore not shown. However, the scattering layer 18 is merely optional and can be omitted in all optoelectronic components 1.

[0061] Fig. 4 shows a schematic side sectional view of the optoelectronic component 1 according to Fig. 2 during operation. The optoelectronic component 1 according to Fig. 2 is shown merely as an example in order to illustrate the idea underlying the optoelectronic component 1.

[0062] During operation of the optoelectronic component 1, the optoelectronic semiconductor chips 7 emit electromagnetic radiation 19. In the exemplary embodiment of the optoelectronic semiconductor chips 7, the emission occurs at the top sides 8 and the side surfaces 10 of the optoelectronic semiconductor chips 7. Scattering of the emitted electromagnetic radiation 19 can already occur in the encapsulation material 12 if scattering particles are provided. The emitted and possibly scattered electromagnetic radiation is reflected at the frame 4 if it does not emerge directly from the cavity 6. For this purpose, the frame can, for example, have further scattering particles. After scattering and reflection, the electromagnetic radiation 19 emerges from the cavity 6.

[0063] Since the potting material 12 protrudes from the cavity 6, electromagnetic radiation 19 is emitted by the optoelectronic component 1 in the region of the section of the potting material 12 protruding from the cavity 6, i.e. at the potting surface 13 and the potting side surfaces 14. If necessary, the electromagnetic radiation 19 is scattered at the scattering layer 18, wherein a reflection into the cavity 6 can occur.

[0064] Overall, a homogenization of the radiation by the optoelectronic component 1 is achieved because the light 19 is first mixed in the cavity 6 by scattering and / or reflection before it exits the cavity 6. As a result, the optoelectronic component 1 has a homogeneous radiation characteristic perpendicular to the mounting surface 5 and perpendicular to the walls 15 of the frame. In this way, it is possible, for example, to achieve particularly efficient color mixing. If a scattering layer 18 is provided, the radiation perpendicular to the mounting surface 5 is reduced, while the lateral emission is additionally homogenized.

[0065] In the optoelectronic component 1 according to Fig. 1, i.e., in the case of a two-sided cavity 6, a directly laterally directed emission is amplified because the frame 4 does not completely enclose the cavity 6. In the optoelectronic component 1 according to Fig. 3, i.e., in the case of a curved base 17, an additional mixing of the radiation 19 emitted by the optoelectronic semiconductor chips 7 occurs within the cavity 6, since the curvature of the base causes different emission angles for the various optoelectronic semiconductor chips 7.

[0066] Figs. 5 to 8 each schematically show the optoelectronic component 1 according to Fig. 1 with various wirings of the optoelectronic semiconductor chips 7 with the chip contact pads 11 arranged on the bottom 17 of the cavity 6 in a transparent plan view, wherein the scattering layer 18 is not shown. However, the wirings of Figs. 5 to 8 can also be provided in the optoelectronic components 1 according to Figs. 2 and 3.

[0067] 5 to 8, the optoelectronic semiconductor chips 7 are designed, by way of example, to emit light in the colors red, green, and blue. A first optoelectronic semiconductor chip 20 is designed to emit light in the color green and is designed, by way of example, as a sapphire chip. A second optoelectronic semiconductor chip 21 is designed to emit light in the color red and is designed, by way of example, as a thin-film chip in FIGS. 5 to 7, but as a sapphire chip in FIG. 8. A third optoelectronic semiconductor chip 22 is designed to emit light in the color blue and is designed, by way of example, as a sapphire chip. The second optoelectronic semiconductor chip 21 is arranged centrally in FIGS. 5 to 8, although this is not mandatory. In FIGS. 5 to 7, the optoelectronic semiconductor chips 7 are arranged above a first chip contact area 23.The first chip contact surface 23 serves as an anode for the second semiconductor chip 21. The second semiconductor chip 21 has a contact pad on its underside 9, which is arranged on the first chip contact surface 23 and electrically connected to it. The first and second semiconductor chips 20, 22 are each electrically insulated from the first chip contact surface 23. Alternatively, the first and second semiconductor chips 20, 22 can be arranged next to the first chip contact surface 23.

[0068] In the wiring of Fig. 5, all optoelectronic semiconductor chips 20, 21, 22 are electrically connected to separate second chip contact areas 24 via bonding wires 26. The second chip contact areas 24 serve as cathodes for each of the optoelectronic semiconductor chips 20, 21, 22. The first and third semiconductor chips 20, 22 are electrically connected via bonding wires to a common third chip contact area 25, which serves as a common anode for the first and third optoelectronic semiconductor chips 29, 22.

[0069] In the wiring of Fig. 6, all optoelectronic semiconductor chips 20, 21, 22 are electrically connected via bonding wires 26 to a common second chip contact area 24. The second chip contact area 24 serves as a cathode (common cathode) for all optoelectronic semiconductor chips 20, 21, 22. The first and third semiconductor chips 20, 22 are electrically connected via bonding wires to separate third chip contact areas 25, which each serve as an anode for the first and third optoelectronic semiconductor chips 29, 22.

[0070] The wiring of Fig. 7 differs from the wiring of Fig. 6 in that only the third optoelectronic semiconductor chip 23 is connected to the second chip contact area 24. Instead of the first and second optoelectronic semiconductor chips 20, 21 being connected to the second chip contact area 24, the first semiconductor chip 20 is connected to the second semiconductor chip by means of a bonding wire 26.

[0071] 21. Furthermore, the second semiconductor chip 21 is connected to the third optoelectronic semiconductor chip 22 by means of a bonding wire 26. In this way, all optoelectronic semiconductor chips 20, 21, 22 are connected to the cathode.

[0072] For electrical connection via bonding wires 26, the optoelectronic semiconductor chips 7 have contact pads on their upper sides. In the embodiment according to Fig. 8, no bonding wires 26 are provided. In this case, only contact pads are provided on the undersides 9 of the optoelectronic semiconductor chips 7 to enable electrical contact with chip contact surfaces 11.

[0073] In the wiring according to Fig. 8, the optoelectronic semiconductor chips 20, 21, 22 are electrically connected to a common second chip contact area 24. The common second chip contact area 24 can serve either as an anode or as a cathode. Furthermore, the optoelectronic semiconductor chips 20, 21, 22 are each electrically connected to separate third chip contact areas 25.

[0074] Fig. 9 shows schematically the optoelectronic component 1 according to Fig. 5 in a bottom view.

[0075] The optoelectronic component 1 according to Fig. 5 has a total of five chip contact surfaces 11. In order to electrically contact the chip contact surfaces 11 during surface mounting, the carrier 3 has solder contact surfaces 28 on a further mounting surface 27 opposite the mounting surface 5. The solder contact surfaces 28 are electrically connected to the chip contact surfaces 11. Since the optoelectronic component 1 has a total of five chip contact surfaces 11, it is expedient that a total of five solder contact surfaces 28 are provided on the further mounting surface 27. The optoelectronic component 1 can, for example, be arranged on a printed circuit board (PCB) and electrically contacted via the solder contact surfaces 28. For this purpose, a solder material can be used which is arranged on electrical contacts of the printed circuit board.The optoelectronic component 1 is then arranged with the solder contact surfaces 28 over the electrical contacts of the circuit board and on the solder material, whereby the electrical contacts and the chip contact surfaces 28 are electrically connected to one another and the optoelectronic component 1 is fixed to the circuit board.

[0076] The variant of the optoelectronic component 1 shown in Fig. 9 is designed as a so-called QFN component (quad flat no leads package, QFN for short), in which the solder contact surfaces 28 are arranged in the region of side surfaces of the optoelectronic component 1 and are accessible at these, but do not protrude beyond the side surfaces.

[0077] Fig. 10 schematically shows an optoelectronic component 1 according to one of Figs. 6 to 8 in a bottom view. The optoelectronic component 1 according to Fig. 10 has similarities to the optoelectronic component 1 according to Fig. 9. In the following, only the differences are explained, the reference symbols for similar elements being retained.

[0078] The optoelectronic component 1 according to Fig. 10, in contrast to the optoelectronic component 1 of Fig. 9, has a total of four soldering contact surfaces 28 on the further mounting surface 27, since a total of only four chip contact surfaces 11 are provided. Furthermore, the soldering contact surfaces 28 are not arranged directly on the side surfaces of the optoelectronic component 1, but are spaced apart from them. The variant shown in Fig. 10 can also be referred to as a PCB variant. Fig. 11 schematically shows a display device 26 with a plurality of optoelectronic components 1 arranged laterally next to one another in a plan view.

[0079] The optoelectronic components 1 thus represent image points of the display device 26, which can also be referred to as pixels. This advantageously provides a display device 26 whose image points are formed by optoelectronic components 1 that can exhibit homogeneous radiation in up to five spatial directions and are designed, for example, as 360° RGB LEDs.

[0080] If optoelectronic components 1 with two-sided cavities 6 are used, the optoelectronic components 1 can be arranged next to one another such that the optoelectronic components 1 have the same azimuthal orientation. However, homogenization of a radiation characteristic of the display device 26 can be further improved, for example, by the optoelectronic semiconductor chips with two-sided cavities having different azimuthal orientations.

[0081] The invention has been illustrated and described in more detail using preferred embodiments. However, the invention is not limited to the disclosed examples. Rather, other variations may be derived therefrom by those skilled in the art without departing from the scope of the invention.

[0082] LIST OF REFERENCE SYMBOLS optoelectronic component housing carrier frame mounting surface of the carrier cavity optoelectronic semiconductor chip top side of the optoelectronic semiconductor chip bottom side of the optoelectronic semiconductor chip side surface of the optoelectronic semiconductor chip chip contact surface encapsulation material encapsulation surface encapsulation side surfaces walls of the frame end faces of the walls bottom of the cavity scattering layer electromagnetic radiation first optoelectronic semiconductor chip second optoelectronic semiconductor chip third optoelectronic semiconductor chip first chip contact surface second chip contact surface third chip contact surface display device further mounting surface soldering contact surfaces top edge of a wall of the frame

Claims

PATENT CLAIMS 1. Optoelectronic component (1) comprising a housing (2) with a carrier (3) and a frame (4), at least one potting material (12) and at least one optoelectronic semiconductor chip (7) designed to emit electromagnetic radiation, wherein the frame (4) is mounted on a mounting surface (5) of the carrier (3) and encloses a cavity (6) with the carrier (3), wherein the optoelectronic semiconductor chip (7) and the encapsulation material (12) are arranged in the cavity (6) and the optoelectronic semiconductor chip (7) is embedded in the encapsulation material (12), wherein the encapsulation material (12) protrudes from the cavity (6) along a direction perpendicular to the mounting surface (5).

2. Optoelectronic component (1) according to claim 1, wherein the frame (4) completely surrounds the cavity (6) laterally.

3. Optoelectronic component (1) according to claim 1, wherein the frame (4) laterally delimits the cavity (6) in sections.

4. Optoelectronic component (1) according to claim 2 or 3, wherein the frame (4) has walls (15) which have different heights with respect to the carrier (3) and / or wherein the frame (4) has at least one wall (15) with an upper edge (29) facing away from the carrier (3) and having a curved design.

5. Optoelectronic component (1) according to one of claims 2 to 4, wherein the frame (4) has two opposite walls (15), wherein the casting material (12) is exposed between end faces (16) of the opposing walls (15) of the frame (4).

6. Optoelectronic component (1) according to one of the preceding claims, wherein the optoelectronic component (1) comprises a plurality of optoelectronic semiconductor chips (7) configured to emit electromagnetic radiation, arranged in the cavity (6) and embedded in the encapsulation material (12).

7. Optoelectronic component (1) according to one of the preceding claims, wherein the optoelectronic semiconductor chips (7) are arranged linearly one behind the other along a direction perpendicular to the frame (4).

8. Optoelectronic component (1) according to claim 6 or 7, wherein the optoelectronic semiconductor chips (7) are designed to emit electromagnetic radiation from different spectral ranges.

9. Optoelectronic component (1) according to one of the preceding claims 6 to 8, wherein electrical chip contact surfaces (11) are arranged on a bottom (17) of the cavity (6), wherein the optoelectronic semiconductor chips (7) are electrically connected to a common chip contact surface (11) provided as an anode or a common chip contact surface (11) provided as a cathode.

10. Optoelectronic component (1) according to one of the preceding claims, wherein the encapsulation material (12) is at least partially transparent to the electromagnetic radiation emitted by the at least one optoelectronic semiconductor chip (7) and has embedded scattering particles.

11. Optoelectronic component (1) according to one of the preceding claims, wherein the encapsulation material (12) has a encapsulation surface (13) protruding from the cavity (6) and arranged parallel to the carrier, wherein a scattering layer (18) is arranged on the encapsulation surface (13).

12. Display device (26) comprising a plurality of optoelectronic components (1) according to one of the preceding claims arranged regularly next to one another.

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