Scribe device controller, scribe device, and scribe method

Abstract

This scribe device controller includes a control unit. A workpiece (100) includes a single crystal substrate (200) having an off angle (θ) that is an angle of a main surface with respect to a reference crystal surface. The control unit controls the position of a wheel forming a scribe line on the workpiece (100). In a step for forming the scribe line parallel to an intersection line between the reference crystal surface and the main surface, the control unit controls the position of a contact start point related to a direction parallel to the main surface in a cross section orthogonal to the intersection line according to a thickness of the single crystal substrate (200).

Description

Scribe device control device, scribe device, and scribing method

[0001] The present invention relates to a control device for a scribing device, a scribing device, and a scribing method.

[0002] The off-angle of a single crystal substrate is defined as the angle of the main surface of the single crystal substrate with respect to a reference crystal plane of the single crystal substrate. In one example, the off-angle is set in the single crystal substrate for the purpose of smoothly progressing epitaxial growth.

[0003] A method utilizing cleavage of a single crystal is known as a method for dividing a workpiece including a single crystal substrate. In one example, the workpiece is divided as follows: A scribe line is formed on the workpiece surface, which is one of the main surfaces of the single crystal substrate. The workpiece with the scribe line formed is then broken.

[0004] In the breaking process, a force is applied to the workpiece so that cleavage proceeds from a scribe line on the workpiece surface toward the opposite surface, which is the other main surface of the workpiece. The workpiece is divided to obtain a single crystal product. Patent Documents 1 and 2 describe examples of conventional dividing methods.

[0005] JP-A-9-266347 JP-A-49-24065

[0006] The cross section of the workpiece or single crystal product that is perpendicular to the intersection of a plane parallel to the reference crystal plane and the main surface of the single crystal substrate is called the "reference cross section." The direction parallel to the main surface of the single crystal substrate in the reference cross section is called the "reference direction."

[0007] A single crystal product includes a cleavage plane that is revealed by cleavage. The opposite surface of the single crystal product has a cleavage plane edge, which is the edge of the cleavage plane. The position of the cleavage plane edge relative to the reference direction can affect the quality of the single crystal product.

[0008] The control device of the scribing device of the present invention is a control device for a scribing device that includes a control unit that controls the position of a wheel that forms a scribe line on a workpiece including a single crystal substrate having an off-angle, which is the angle of the main surface relative to a reference crystal plane, and the contact position of the wheel with the workpiece when the wheel transitions from a non-contact state in which it does not contact the workpiece to a contact state in which it contacts the workpiece is called the contact starting point, and the control unit controls the position of the contact starting point in a direction parallel to the main surface in a cross section perpendicular to the intersection line between the reference crystal plane and the main surface in the process of forming the scribe line parallel to the intersection line between the reference crystal plane and the main surface in accordance with the thickness of the single crystal substrate.

[0009] The above configuration provides the following advantages, for example: The position of the cleavage plane peripheral edge relative to the contact initiation point relative to the reference direction varies depending on the thickness of the single crystal substrate. By controlling the position of the contact initiation point relative to the reference direction depending on the thickness of the single crystal substrate, the position of the cleavage plane peripheral edge relative to the reference direction can be controlled. This is expected to improve the quality of single crystal products.

[0010] In one example, the control unit controls the position of the contact initiation point based on the off-angle and the thickness of the single crystal substrate.

[0011] According to the above-described configuration, for example, the following effects can be obtained: The position of the cleavage plane periphery can be controlled more appropriately.

[0012] In one example, the control unit controls the position of the contact initiation point based on the calculation result of the formula "T x tan θ," where T is the thickness of the single crystal substrate, and θ is the off-angle.

[0013] According to the above-described configuration, for example, the following effects can be obtained: The position of the cleavage plane periphery can be controlled more appropriately.

[0014] In one example, the control unit controls the position of the contact initiation point so that the peripheral edge of the cleavage plane of the single crystal substrate formed by breaking is positioned in a margin area.

[0015] According to the above-mentioned configuration, the following effects can be obtained, for example: It is expected that the quality of the single crystal product will be improved.

[0016] In one example, the control unit controls the position of the contact initiation point so that the cleavage plane peripheral edge is positioned at the center of the marginal region.

[0017] According to the above-mentioned configuration, the following effects can be obtained, for example: It is expected that the quality of the single crystal product will be improved.

[0018] In one example, the control unit controls the position of the contact start point so that the distance between the center of the marginal region and the contact start point increases as the thickness of the single crystal substrate increases.

[0019] According to the above-described configuration, the following effects can be obtained, for example: The position of the periphery of the cleavage plane relative to the reference direction can be brought closer to the center of the marginal region, which is expected to improve the quality of the single crystal product.

[0020] In one example, when the single crystal substrate is a semiconductor substrate, the control unit controls the wheel so that the scribe line is formed on the main surface, which is the back surface of the semiconductor substrate.

[0021] According to the above-described configuration, the following effects can be obtained, for example: The surface of the semiconductor substrate is less susceptible to the effects of scribing.

[0022] The scribing device according to the present invention includes a processing device including the wheel, and a scribing device control device that controls the processing device.

[0023] According to the above-mentioned configuration, the following effects can be obtained, for example: It is expected that the quality of the single crystal product will be improved.

[0024] The scribing method of the present invention is a scribing method for controlling the position of a wheel that forms a scribe line on a workpiece including a single crystal substrate having an off-angle, which is the angle of the main surface relative to a reference crystal plane, and the contact position of the wheel with the workpiece when the wheel transitions from a non-contact state where it does not contact the workpiece to a contact state where it contacts the workpiece is called the contact starting point, and in the step of forming the scribe line parallel to the intersection line between the reference crystal plane and the main surface, the position of the contact starting point in a direction parallel to the main surface in a cross section perpendicular to the intersection line is controlled in accordance with the thickness of the single crystal substrate.

[0025] According to the above-mentioned configuration, the following effects can be obtained, for example: It is expected that the quality of the single crystal product will be improved.

[0026] The scribing device control device, scribing device, and scribing method according to the present invention are expected to improve the quality of single crystal products.

[0027] 1 is a block diagram of a scribing device in an embodiment. A diagram showing a scribing device and a portion of a workpiece. A front view of a scribing head. A side view of a scribing head. A plan view of a workpiece. A diagram showing the relationship between a reference crystal plane and a main surface. A plan view showing a front surface of a semiconductor substrate. A plan view showing a back surface of a semiconductor substrate. A diagram (1) showing a scribing process. A diagram (2) showing a scribing process. A diagram showing a breaking process. A diagram showing a reference cross section of a workpiece. A flowchart showing an example of scribing control.

[0028] (Embodiment) Please refer to Figures 1 to 8. Figures 1 to 4 show an example of a scribing device 10. Figures 5 to 8 show an example of a workpiece 100 including a single crystal substrate 200.

[0029] (Workpiece 100) In one example, the workpiece 100 includes one or more single crystal products 100X. By a method for manufacturing the single crystal products 100X, the workpiece 100 is processed to produce one or more single crystal products 100X from the workpiece 100.

[0030] In one example, the method for manufacturing the single crystal product 100X includes a scribing method and a breaking method. The scribing method includes a scribing step of scribing the workpiece 100. The breaking method includes a breaking step of breaking the scribed workpiece 100.

[0031] In the scribing step, the scribing device 10 forms one or more scribe lines SL in the workpiece 100. In the breaking step, the breaking device divides the workpiece 100 into one or more single crystal products 100X.

[0032] An example of the workpiece 100 is a workpiece 100 including a semiconductor substrate 200A. In one example, the workpiece 100 including the semiconductor substrate 200A includes one or more semiconductor chips as one or more single crystal products 100X.

[0033] Examples of materials that can be used to form the semiconductor substrate 200A include semiconductors and compound semiconductors. Examples of semiconductors include silicon, sapphire, and diamond. Examples of compound semiconductors include silicon carbide (SiC), gallium nitride (GaN), and gallium arsenide (GaAs).

[0034] An example of workpiece 100 is workpiece 100 including a cover glass substrate. In one example, workpiece 100 including a cover glass substrate includes one or more cover glasses as one or more single crystal products 100X.

[0035] Examples of materials that can be used to form the cover glass substrate include materials that have high transparency and high hardness, such as sapphire and diamond.

[0036] The workpiece 100 includes a main surface 101. In one example, the main surface 101 of the workpiece 100 includes a first main surface 101A and a second main surface 101B. The second main surface 101B is the surface opposite to the first main surface 101A.

[0037] Single crystal substrate 200 includes a main surface 201. In one example, main surface 201 of single crystal substrate 200 includes a first main surface 201A and a second main surface 201B. Second main surface 201B is the surface opposite to first main surface 201A.

[0038] The configuration of the workpiece 100 can be selected arbitrarily. The configuration of the workpiece 100 is not limited to the configuration shown in the example. In one example, the workpiece 100 is classified into a first type of workpiece 100 and a second type of workpiece 100.

[0039] 2, 7, and 8, the first type of workpiece 100 includes a single crystal substrate 200 and an additional element 300. The additional element 300 is provided on at least one of the first main surface 201A and the second main surface 201B. An example of the first type of workpiece 100 is a workpiece 100 including a semiconductor substrate 200A.

[0040] The first main surface 101A of the first-type workpiece 100 is constituted by at least one of the additional element 300 and the first main surface 201A of the single crystal substrate 200. The second main surface 101B of the first-type workpiece 100 is constituted by at least one of the additional element 300 and the second main surface 201B of the single crystal substrate 200.

[0041] The second type of workpiece 100 includes only a single crystal substrate 200. An example of the second type of workpiece 100 is a workpiece 100 including a substrate for a cover glass.

[0042] 2, the first main surface 101A of the second type workpiece 100 is formed by the first main surface 201A of the single crystal substrate 200. The second main surface 101B of the second type workpiece 100 is formed by the second main surface 201B of the single crystal substrate 200.

[0043] In scribing the workpiece 100, a scribe line SL is formed on one main surface 201 of the single crystal substrate 200. The main surface 201 on which the scribe line SL is formed is the surface to be processed. The other main surface 201 of the single crystal substrate 200, which is the main surface 201 opposite to the surface to be processed, is the opposite surface. The surface to be processed is one of the first main surface 201A and the second main surface 201B. The opposite surface is the other of the first main surface 201A and the second main surface 201B.

[0044] When the additional element 300 is provided on the surface to be processed, the additional element 300 provided on the portion of the surface to be processed where the scribe line SL is to be formed is removed as the surface to be processed is scribing processed.

[0045] In the breaking process for the workpiece 100, a force is applied to the workpiece 100 so that cleavage proceeds from the scribe line SL toward the opposite surface. As the workpiece 100 is cleaved, one or more single crystal products 100X are obtained from the workpiece 100.

[0046] (Scribing Device 10) Please refer to Figures 1 and 2. The configuration of the scribing device 10 can be selected arbitrarily. The configuration of the scribing device 10 is not limited to the configuration shown in the example.

[0047] (Supporting Device 20) In one example, the scribing device 10 includes a supporting device 20. The supporting device 20 is configured to support the workpiece 100. In one example, the supporting device 20 includes a table 21. In one example, the table 21 includes a placement portion 21A on which the workpiece 100 is placed.

[0048] In one example, the table 21 is configured so that the workpiece 100 can be fixed to the placement portion 21 A. In one example, the placement portion 21 A is made of a material that is highly light transmissive.

[0049] In one example, the support device 20 includes a table drive unit. In one example, the table drive unit is configured to linearly move and rotate the table 21. In one example, the table 21 can linearly move in two axes.

[0050] (Photographing Device 30) In one example, the scribing device 10 includes a photographing device 30. The photographing device 30 is configured to be able to photograph the workpiece 100 supported by the supporting device 20. In one example, the photographing device 30 includes a camera 31.

[0051] In one example, the camera 31 is configured to be able to capture an image of the workpiece 100 placed on the placement portion 21A of the table 21. In one example, the camera 31 is provided below the placement portion 21A of the table 21. In one example, the camera 31 is a CCD camera.

[0052] 1 and 2, in one example, the scribing device 10 includes a processing device 40. The processing device 40 is configured to be able to scribe the workpiece 100.

[0053] In one example, the processing device 40 includes a scribing head 50 and a drive unit. In one example, the scribing head 50 is attached to the drive unit.

[0054] In one example, the drive unit is configured to be able to change the position of the scribe head 50 relative to the table 21. In one example, the drive unit includes at least one of a planar drive unit and a vertical drive unit.

[0055] In one example, the planar drive unit changes the position of the scribe head 50 in a direction parallel to the placement portion 21A of the table 21. In one example, the vertical drive unit changes the position of the scribe head 50 in a direction perpendicular to the placement portion 21A of the table 21.

[0056] 2-4, in one example, the scribe head 50 includes a base 51. In one example, the base 51 is attached to a drive unit. In one example, the base 51 is attached to a planar drive unit or a vertical drive unit of the drive unit.

[0057] In one example, the scribe head 50 includes a holder assembly 60. In one example, the holder assembly 60 includes a holder unit 70, a holder joint 61, and a holder 62.

[0058] In one example, the holder unit 70 includes a wheel holder 71, a pin 72, and a wheel 73. In one example, the pin 72 and the wheel 73 are made of a high-hardness material, such as a single-crystal diamond, a polycrystalline diamond, or a cemented carbide.

[0059] In one example, the pin 72 is supported by the wheel holder 71 so as to be rotatable relative to the wheel holder 71. In one example, the pin 72 supports a wheel 73.

[0060] The wheel 73 is a cutter wheel that scribes the workpiece 100. In one example, the outer periphery of the wheel 73 forms a cutting edge 73A.

[0061] In one example, the wheel 73 is supported on the pin 72 so as to be rotatable relative to the pin 72 about the central axis of the pin 72. In one example, the wheel 73 is supported on the pin 72 so as to be movable relative to the pin 72 in a direction parallel to the central axis of the pin 72.

[0062] In one example, the holder joint 61 is configured to support the holder unit 70. In one example, the holder joint 61 supports the holder unit 70 so that it can rotate relative to the holder 62 around the central axis of the holder joint 61. In one example, the holder unit 70 is configured to be detachable from the holder joint 61 or is configured integrally with the holder joint 61.

[0063] In one example, the holder 62 is configured to support the holder assembly 60. In one example, the holder joint 61 is coupled to the holder 62. In one example, the holder joint 61 is configured to be detachable from the holder 62 or to be integral with the holder 62.

[0064] In one example, the scribe head 50 includes a connecting portion 63. In one example, the connecting portion 63 connects the holder 62 to the base 51 so that the holder 62 can move relative to the base 51 in at least one of a direction perpendicular to and a direction parallel to the placement portion 21A of the table 21.

[0065] In one example, the connecting portion 63 includes a rail 63 A and a slider 63 B. In one example, the connecting portion 63 is configured so that the holder 62 can move relative to the base 51 in a direction perpendicular to the placement portion 21 A of the table 21 .

[0066] In one example, the rail 63A is provided on one of the base 51 and the holder 62. In another example, the slider 63B is provided on the other of the base 51 and the holder 62.

[0067] In one example, the scribe head 50 includes a load adjustment unit 64. In one example, the load adjustment unit 64 adjusts the force with which the wheel 73 is pressed against the workpiece 100. In one example, the load adjustment unit 64 includes an actuator 64A and a bracket 64B.

[0068] In one example, the actuator 64A is attached to a bracket 64B, which is attached to the base 51.

[0069] In one example, the actuator 64A pushes the holder 62, the rail 63A attached to the holder 62, or the slider 63B attached to the holder 62 toward the workpiece 100.

[0070] Examples of the actuator 64A include a power cylinder, a solenoid, an electric motor, a servo motor, and a linear actuator. Examples of the power cylinder include a hydraulic cylinder, a pneumatic cylinder, a water hydraulic cylinder, and an electric cylinder.

[0071] (Controller 80) Please refer to Figures 1 and 2. In one example, the scribing device 10 includes a controller 80. The configuration of the controller 80 can be selected arbitrarily. The configuration of the controller 80 is not limited to the configuration shown in the example.

[0072] In one example, the control device 80 includes a control unit 81. In one example, the control unit 81 includes a processor. In one example, the processor includes at least one of a central processing unit and a microprocessor.

[0073] In one example, the control unit 81 is configured to be able to communicate with the support device 20, the photographing device 30, and the processing device 40. In one example, the control unit 81 controls the support device 20, the photographing device 30, and the processing device 40.

[0074] In one example, the control unit 81 controls the position of the wheel 73 relative to the workpiece 100 by controlling the drive unit of the processing device 40. In one example, the control unit 81 controls the force pressing the wheel 73 against the workpiece 100 by controlling the actuator 64A.

[0075] In one example, the control device 80 includes a storage unit 82. In one example, the storage unit 82 includes a semiconductor memory. In one example, the semiconductor memory includes at least one of a read only memory (ROM), a random access memory (RAM), a non-volatile random access memory (NVRAM), and a flash memory.

[0076] In one example, the storage unit 82 stores control-related information that is referenced in the control executed by the control unit 81. In one example, the control-related information includes information regarding the control of the support device 20, information regarding the control of the imaging device 30, and information regarding the control of the processing device 40.

[0077] 5 and 6 . In one example, the workpiece 100 includes a single crystal substrate 200 having an off-angle θ. In one example, the off-angle θ of the single crystal substrate 200 is defined as the angle of the main surface 201 with respect to a reference crystal plane. In one example, the off-angle θ of the single crystal substrate 200 is defined as the angle between a crystal plane normal NA, which is the normal to the reference crystal plane, and a main surface normal NB, which is the normal to the main surface 201.

[0078] A state in which single crystal substrate 200 has an off angle θ or a state in which single crystal substrate 200 has an off angle θ set thereto means a state in which the off angle θ of single crystal substrate 200 is larger than 0 degrees. A state in which single crystal substrate 200 does not have an off angle θ or a state in which single crystal substrate 200 does not have an off angle θ set thereto means a state in which the off angle θ of single crystal substrate 200 is 0 degrees.

[0079] In single crystal substrate 200 having an off-angle θ, a plane FH parallel to the reference crystal plane of single crystal substrate 200 intersects with main surface 201 of single crystal substrate 200. For example, when the crystal system of the single crystal is a hexagonal system, the reference crystal plane is the (0001) plane. For example, when the crystal system of the single crystal is a cubic system, the reference crystal plane is the (001) plane.

[0080] A reference cross section is defined for the workpiece 100 and the single crystal product 100X. The reference cross section is a cross section of the workpiece 100 and the single crystal product 100X that is perpendicular to the intersection line LF between a plane FH parallel to the reference crystal plane and the main surface 201 of the single crystal substrate 200.

[0081] A reference direction DA is defined for the workpiece 100 and the single crystal product 100X. The reference direction DA is a direction parallel to the main surface 201 of the single crystal substrate 200 in the reference cross section, or a direction perpendicular to the main surface normal NB. The reference direction DA includes a first reference direction and a second reference direction. The first reference direction is opposite to the second reference direction.

[0082] A cross direction DB is defined for the workpiece 100 and the single crystal product 100X. The cross direction DB is parallel to the main surface 201 of the single crystal substrate 200 and perpendicular to the reference direction DA. The cross direction DB includes a first cross direction and a second cross direction. The first cross direction is opposite to the second cross direction.

[0083] In one example, the workpiece 100 includes a crystal orientation indicator 120. The crystal orientation indicator 120 indicates the crystal orientation of the single crystal substrate 200. Examples of the crystal orientation indicator 120 include an orientation flat 121 and a notch. In the example shown, the workpiece 100 is provided with an orientation flat 121.

[0084] 7, in one example, the workpiece 100 includes a plurality of main regions 130 and marginal regions 140. The marginal regions 140 are provided to separate adjacent main regions 130. In one example, the main regions 130 constitute a major portion of the single crystal product 100X.

[0085] In one example, the role of the margin area 140 includes at least one of serving as a processing allowance for dividing the workpiece 100 and serving as an area for protecting the main area 130 .

[0086] In one example, the workpiece 100 is divided at the marginal region 140. In one example, one single crystal product 100X includes one main region 130 and a marginal region 140 connected to the main region 130.

[0087] (Semiconductor substrate 200A) See Figures 5 to 8. The following illustrates the configuration of semiconductor substrate 200A, which is an example of single crystal substrate 200. In one example, semiconductor substrate 200A is a SiC substrate. Examples of SiC substrates include a 2H-SiC substrate, a 4H-SiC substrate, and a 6H-SiC substrate.

[0088] In one example, the semiconductor substrate 200A includes a base substrate 210 and an epitaxial layer 220. In one example, the epitaxial layer 220 is formed by epitaxial growth. An example of a method for manufacturing the semiconductor substrate 200A will be described.

[0089] A single crystal ingot is produced. Examples of methods for producing a single crystal ingot include sublimation and melting. An example of a melting method is the Czochralski method.

[0090] A base substrate 210 having an off-angle θ is formed from an ingot. A crystal orientation indicating portion 120 is formed on the base substrate 210. In the illustrated example, an orientation flat 121 is formed on the base substrate 210.

[0091] The primary surface of the base substrate 210 is inclined at an off-angle θ relative to the reference crystal plane toward either a first reference direction or a second reference direction, which is one of the reference directions DA. In one example, the crystal form of the single crystal is hexagonal. The reference crystal plane is the (0001) plane. In one example, the off-angle θ is in the range of 4 degrees or more and 8 degrees or less.

[0092] An epitaxial layer 220 is formed on the main surface of the base substrate 210 by epitaxial growth. One example of a method for forming the epitaxial layer 220 is a vapor phase method. One example of a vapor phase method is a sublimation recrystallization method.

[0093] In one example, the first main surface 201A of the semiconductor substrate 200A is formed by the epitaxial layer 220. In one example, the first main surface 201A of the semiconductor substrate 200A is the front surface of the semiconductor substrate 200A. The front surface of the semiconductor substrate 200A is the surface on which the main elements of the semiconductor chip are provided.

[0094] In one example, second main surface 201B of semiconductor substrate 200A is formed by the main surface of base substrate 210. In another example, second main surface 201B of semiconductor substrate 200A is the back surface of semiconductor substrate 200A.

[0095] 7 and 8, the structure of the workpiece 100 including the semiconductor substrate 200A will be illustrated. In one example, the workpiece 100 includes the semiconductor substrate 200A and an additional element 300.

[0096] In one example, the workpiece 100 includes an insulating film 310 as the additional element 300. In one example, the insulating film 310 is provided on the first main surface 201A, which is the surface of the semiconductor substrate 200A. In one example, the insulating film 310 is a thin film layer.

[0097] In one example, the insulating film 310 includes at least one of a silicon oxide film and a silicon nitride film. In one example, the insulating film 310 is made up of a plurality of stacked thin film layers.

[0098] In one example, the workpiece 100 includes a surface metal layer 320 as the additional element 300. In one example, the surface metal layer 320 is provided on the insulating film 310. In one example, the surface metal layer 320 includes a surface electrode 321.

[0099] In one example, the surface metal layer 320 includes a guard ring 322. In one example, the guard ring 322 is provided so as to surround the periphery of the surface electrode 321 and so as to form a space between the guard ring 322 and the surface electrode 321.

[0100] In one example, the guard ring 322 is configured to reduce external electrical influences on the surface electrode 321. In one example, the guard ring 322 is in an electrically floating state.

[0101] In one example, the workpiece 100 includes a back surface metal layer 330 as the additional element 300. In one example, the back surface metal layer 330 is provided on the second main surface 201B, which is the back surface of the semiconductor substrate 200A.

[0102] In one example, the main region 130 of the workpiece 100 constitutes a transistor. The front electrode 321 constitutes a source electrode and a gate electrode. The back metal layer 330 constitutes a drain electrode as a back electrode.

[0103] In one example, the main region 130 of the workpiece 100 forms a diode. The front surface electrode 321 forms one of the anode and cathode electrodes. The back surface metal layer 330 forms the other of the anode and cathode electrodes as the back surface electrode.

[0104] In one example, the back metal layer 330 forms a heat sink. In one example, the back metal layer 330 forming the heat sink is electrically insulated from the front metal layer 320.

[0105] In one example, one main region 130 includes a semiconductor substrate 200A, an insulating film 310 and a front surface metal layer 320 provided on the first main surface 201A, and a back surface metal layer 330 provided on the second main surface 201B.

[0106] In one example, the multiple main regions 130 are aligned in the reference direction DA and the cross direction DB. In one example, NX main regions 130 are aligned in the reference direction DA. In one example, NY main regions 130 are aligned in the cross direction DB. In one example, NX and NY are natural numbers greater than or equal to 2.

[0107] In one example, the margin area 140 includes a plurality of streets 141 and a plurality of dummy areas 142. In one example, the streets 141 are provided as machining allowances for dividing the workpiece 100. In one example, the dummy areas 142 are provided as areas for protecting the main area 130. In one example, a step is provided at the boundary between the streets 141 and the dummy areas 142. In one example, no step is provided at the boundary between the streets 141 and the dummy areas 142.

[0108] In one example, the plurality of streets 141 are linear regions. In one example, the plurality of streets 141 are arranged to traverse the workpiece 100. In one example, the plurality of streets 141 are divided into first type streets 141 and second type streets 141.

[0109] The first type of streets 141 are arranged to extend in the reference direction DA. The second type of streets 141 are arranged to extend in the cross direction DB. In one example, the margin area 140 includes a plurality of first type of streets 141 and a plurality of second type of streets 141.

[0110] In one example, the plurality of dummy regions 142 are annular regions. In one example, each dummy region 142 is provided so as to surround a corresponding one of the main regions 130. The streets 141 are provided so as to separate adjacent dummy regions 142.

[0111] With respect to the margin area 140 that separates adjacent main areas 130, the center of the margin area 140 in the reference direction DA in the reference cross section is referred to as the "margin area center 140C." The center of the street 141 in the reference direction DA in the reference cross section is referred to as the "street center 141C."

[0112] If the dimensions of each dummy area 142 are equal, the street center 141C coincides with the blank area center 140C.

[0113] In one example, the margin area 140 does not include the streets 141, and includes only the dummy areas 142. When the dimensions of each dummy area 142 are equal, the margin area center 140C coincides with the boundary between adjacent dummy areas 142. In one example, the margin area 140 does not include the dummy areas 142, and includes only the streets 141.

[0114] (Manufacturing Method of Single Crystal Product 100X) Please refer to Figures 5 and 9 to 11. An example of a manufacturing method of the single crystal product 100X for manufacturing a semiconductor chip as the single crystal product 100X will be described. In one example, in the scribing step and breaking step in the manufacturing method of the single crystal product 100X, processing is performed on a workpiece 100 including a semiconductor substrate 200A.

[0115] 5, 9 and 10, the scribing step in the method for manufacturing the single crystal product 100X for manufacturing semiconductor chips will be described.

[0116] A contact start point SL1 is defined as the position of the wheel 73 relative to the workpiece 100. The contact start point SL1 is the contact position of the wheel 73 relative to the workpiece 100 when the wheel 73 transitions from a non-contact state where the wheel 73 is not in contact with the workpiece 100 to a contact state where the wheel 73 is in contact with the workpiece 100.

[0117] A contact end point SL2 is defined as the position of the wheel 73 relative to the workpiece 100. The contact end point SL2 is the contact position of the wheel 73 relative to the workpiece 100 when the contact state transitions from a contact state to a non-contact state.

[0118] In one example, the contact start point SL1 and the contact end point SL2 include a vertical position which is a position in the direction in which the scribe line SL extends, and a horizontal position which is a position in a direction perpendicular to the extension direction.

[0119] In one example, the scribe lines SL are divided into first-type scribe lines SL and second-type scribe lines SL. In one example, the first-type scribe lines SL are parallel to the reference direction DA. In one example, the second-type scribe lines SL are parallel to the cross direction DB and the intersection line LF.

[0120] In one example, workpiece 100 is placed on placement portion 21A of table 21 so that scribe line SL is formed on second main surface 201B of single crystal substrate 200. Second main surface 201B of single crystal substrate 200 is the surface to be processed. First main surface 201A of single crystal substrate 200 is the opposite surface.

[0121] The processing device 40 is controlled so that the cutting edge 73A of the wheel 73 contacts the workpiece 100. The wheel 73 is pressed against the workpiece 100, causing the cutting edge 73A of the wheel 73 to penetrate the back surface metal layer 330. The cutting edge 73A of the wheel 73 contacts the second main surface 201B of the semiconductor substrate 200A.

[0122] In this state, the contact position of the wheel 73 with the workpiece 100 is the contact start point SL1. In one example, the processing device 40 is controlled so that the contact start point SL1 is located in the margin region 140 of the workpiece 100.

[0123] The processing device 40 is controlled so as to form all of the planned number of scribe lines SL. The scribe head 50 is scanned from the contact start point SL1 to the contact end point SL2, thereby forming the scribe lines SL on the processing surface.

[0124] When the scribe head 50 is scanned in the reference direction DA, a first type of scribe line SL is formed on the work surface. When the scribe head 50 is scanned in the cross direction DB, a second type of scribe line SL is formed on the work surface.

[0125] In one example, one of all of the first-type scribe lines SL and all of the second-type scribe lines SL is formed first, and then the other of all of the first-type scribe lines SL and all of the second-type scribe lines SL is formed. In Figure 5, some of the total number of scribe lines SL are omitted.

[0126] As the scribe line SL is formed in the workpiece 100, a crack C is formed in the workpiece 100 at a portion corresponding to the bottom of the scribe line SL.

[0127] 6 and 11, the breaking step in the manufacturing method of the single crystal product 100X for manufacturing semiconductor chips will be described.

[0128] In one example, the breaking device includes a table and a break bar. The table supports the workpiece 100. The break bar applies a force to the workpiece 100 by moving relative to the table.

[0129] The workpiece 100 is placed on the table so that the surface to be processed faces the table and the opposite surface faces the break bar. In one example, a specific area of ​​the surface to be processed, including the scribe line SL to be broken, is located above the opening in the table. The specific area of ​​the surface to be processed is not supported by the table. In one example, the specific area of ​​the surface to be processed is located on the table. The specific area of ​​the surface to be processed is supported by the table.

[0130] In one example, a break bar is pressed against a specific area on the opposite surface that corresponds to a specific area on the workpiece surface, as shown by the hollow arrow in Figure 11. The break bar applies force to the workpiece 100 so that the crack C propagates toward the opposite surface.

[0131] As the crack C propagates, the semiconductor substrate 200A is cleaved. The crack C propagates to the opposite surface, dividing the workpiece 100. As the workpiece 100 is divided, a cleavage plane FC is formed in the workpiece 100. A cleavage plane periphery FCA, which is the edge of the cleavage plane FC, is formed on the opposite surface.

[0132] The division of the workpiece 100 in which the workpiece 100 is cleaved starting from a crack C corresponding to the first type scribe line SL is referred to as "vertical division." In vertical division, the crack C propagates in a direction parallel to the main surface normal NB in ​​a cross section perpendicular to the reference cross section. A plane parallel to the cleavage plane FC is perpendicular to the main surface 201 of the semiconductor substrate 200A.

[0133] The division of the workpiece 100 in which the workpiece 100 is cleaved starting from a crack C corresponding to the second type scribe line SL is referred to as "inclined division." In the inclined division, the crack C in the reference cross section propagates in a direction inclined with respect to the principal surface normal NB and in a direction parallel to the crystal plane normal NA.

[0134] A plane parallel to the cleavage plane FC is inclined with respect to the main surface 201 of the semiconductor substrate 200A. In the reference cross section, the angle formed between the plane parallel to the cleavage plane FC and the main surface normal NB corresponds to the off angle θ.

[0135] 9 and 12. In one example, the contact starting point SL1 is defined as the position where the tip of the cutting edge 73A of the wheel 73 contacts the workpiece 100 on the reference cross section.

[0136] When a plane parallel to the cleavage plane FC in the reference cross section is parallel to the main surface normal NB, the position of the cleavage plane periphery FCA in the cross direction DB is the same as the position of the contact start point SL1.

[0137] When a plane parallel to the cleavage plane FC in the reference cross section is inclined with respect to the main surface normal NB, the position of the cleavage plane periphery FCA with respect to the reference direction DA differs from the position of the contact start point SL1.

[0138] The distance between the contact start point SL1 and the cleavage plane peripheral edge FCA in the reference direction DA on the reference cross section is referred to as the "shift amount L." When a plane parallel to the cleavage plane FC on the reference cross section is parallel to the main surface normal NB, the shift amount L is 0. When a plane parallel to the cleavage plane FC on the reference cross section is inclined with respect to the main surface normal NB, the shift amount L is greater than 0.

[0139] The thickness of single crystal substrate 200 is referred to as "substrate thickness T." In one example, substrate thickness T is the distance between first main surface 201A and second main surface 201B of single crystal substrate 200 in the direction of main surface normal NB.

[0140] In one example, the shift amount L is calculated from the following formula (1), which is a formula for calculating the shift amount: L=T×tan θ (1) where L is the shift amount, T is the substrate thickness, and θ is the off angle.

[0141] In one example, the magnitude of the off-angle θ is set depending on the polytype of the single crystal constituting the single crystal substrate 200. An example will be given below of the relationship between the substrate thickness T and the shift amount L when the single crystal substrate 200 is a 4H—SiC substrate and the off-angle θ is set to 4 degrees.

[0142] When the substrate thickness T is 100 μm, the shift amount L is approximately 7 μm. When the substrate thickness T is 200 μm, the shift amount L is approximately 14 μm. When the substrate thickness T is 300 μm, the shift amount L is approximately 21 μm. When the substrate thickness T is 370 μm, the shift amount L is approximately 26 μm.

[0143] (Vertical Division Correspondence Setting Method) In one example, the position of the contact start point SL1 of the scribe line SL, which is the starting point of vertical division, is set based on the vertical division correspondence setting method.

[0144] In one example, the first type scribe line SL is a scribe line SL that is a starting point for vertical division. In one example, the vertical division correspondence setting method is used to set the position of the contact start point SL1 of the first type scribe line SL.

[0145] In one example, the vertical position of the contact initiation point SL1 is set at an arbitrary position on the main surface 201 away from the edge of the single crystal substrate 200.

[0146] In one example, the horizontal position of the contact start point SL1 is set to the margin area 140 other than the margin area center 140C, the margin area center 140C, the street 141 other than the street center 141C, the street center 141C, or the dummy area 142.

[0147] For the scribe line SL that is the starting point for vertical division, the vertical position and horizontal position of the contact start point SL1 are set, thereby setting the position of the contact start point SL1 on the work surface.

[0148] (Slant division correspondence setting method) Please refer to Figures 7, 8 and 12. In one example, the position of the contact start point SL1 of the scribe line SL, which is the starting point of the tilt division, is set based on the tilt division correspondence setting method.

[0149] In one example, the second type scribe line SL is a scribe line SL that serves as a starting point for tilted division. In one example, the tilted division correspondence setting method is used to set the position of the contact start point SL1 of the second type scribe line SL.

[0150] A cleavage plane FC formed by the oblique division is displayed on the reference cross section. The position of the cleavage plane periphery FCA with respect to the reference direction DA on the reference cross section is simply referred to as the "position of the cleavage plane periphery FCA."

[0151] The position of the cleavage plane peripheral edge FCA may affect the quality of the single crystal product 100X. The quality of the single crystal product 100X can be controlled by controlling the position of the cleavage plane peripheral edge FCA.

[0152] In one example, the quality level of the single crystal product 100X is determined based on quality conditions. If the quality conditions are met, the quality level of the single crystal product 100X belongs to a high quality level. The quality conditions can be selected arbitrarily. The quality conditions are not limited to the exemplified contents. Examples of the quality conditions include first to third quality conditions.

[0153] The first quality condition is that the position of the cleavage plane periphery FCA is included in the margin region 140. The second quality condition is that the position of the cleavage plane periphery FCA is included in the street 141 of the margin region 140. The third quality condition is that the position of the cleavage plane periphery FCA coincides with the street center 141C.

[0154] In one example, one of first to third quality conditions is selected as the quality condition, and if the selected quality condition is satisfied, the quality level of the single crystal product 100X belongs to the high quality level.

[0155] The position of the cleavage plane peripheral edge FCA changes depending on the horizontal position of the contact start point SL1 of the scribe line SL, which is the starting point of the oblique division. The horizontal position of the contact start point SL1 of the scribe line SL, which is the starting point of the oblique division, is the position of the contact start point SL1 in the reference direction DA.

[0156] That is, the position of the cleavage plane periphery FCA changes depending on the position of the contact start point SL1 relative to the reference direction DA. The position of the cleavage plane periphery FCA can be controlled by controlling the position of the contact start point SL1 relative to the reference direction DA.

[0157] A vector indicating the direction of cleavage of the workpiece 100 due to breaking includes a component of the reference direction DA and a component of a direction parallel to the principal surface normal NB. The component of the reference direction DA is one of a component of the first reference direction and a component of the second reference direction.

[0158] The direction indicated by one of the first reference direction component and the second reference direction component is referred to as the “travel component direction.” The direction indicated by the other of the first reference direction component and the second reference direction component is referred to as the “start point setting direction.”

[0159] The distance between the reference point and the contact start point SL1 in the reference direction DA is referred to as the "set distance." In one example, the contact start point SL1 is set at a position away from the reference point in the start point setting direction. In one example, the set distance is set based on the shift amount L.

[0160] In one example, a distance equal to the shift amount L, a distance shorter than the shift amount L, or a distance longer than the shift amount L is set as the set distance.

[0161] In one example, when the set distance is set based on the shift amount L, the contact start point SL1 is set so that the set distance becomes longer as the substrate thickness T becomes thicker.

[0162] In one example, the reference point is set to the margin area 140 other than the margin area center 140C, the margin area center 140C, the street 141 other than the street center 141C, the street center 141C, or the dummy area 142.

[0163] In one example, the position of the contact start point SL1 in the reference direction DA is set to a position away from the reference point in the start point setting direction, and the set distance is set to a position equal to the shift amount L. In this example, the cleavage plane periphery FCA coincides with the reference point.

[0164] In one example, the position of the contact start point SL1 in the reference direction DA is set to the blank area 140, the street 141, or the dummy area 142.

[0165] Information indicating the type of single crystal substrate 200 is referred to as “substrate type information.” In one example, the substrate type information includes information indicating the composition of single crystal substrate 200 and information indicating the polytype of the single crystal.

[0166] In one example, the control-related information includes basic reference information that is referenced for setting the contact start point SL1. Examples of the basic reference information include substrate type information, information indicating the off-angle θ, information indicating the substrate thickness T, an off-angle table for calculating the off-angle θ, a shift amount table for calculating the shift amount L, a shift amount calculation formula, information indicating the reference point, information indicating the start point setting direction, information indicating the vertical position of the contact start point SL1, and image information of the workpiece 100.

[0167] In one example, the shift amount table includes a first shift amount table or a second shift amount table. The first shift amount table defines the relationship between the substrate thickness T and the shift amount L. The second shift amount table defines the relationship between the off-angle θ and the substrate thickness T and the shift amount L.

[0168] In one example, in a scribing device 10 that is intended to scribe one type of workpiece 100 or various workpieces 100 having the same off-angle θ, the basic reference information includes a first shift amount table or a second shift amount table.

[0169] In one example, in a scribing device 10 that is intended to scribe various workpieces 100 having different off angles θ, the basic reference information includes multiple first shift amount tables or second shift amount tables corresponding to the various off angles θ.

[0170] In one example, the position of the contact start point SL1 with respect to the reference direction DA is set according to the basic reference information. In one example, the position of the contact start point SL1 with respect to the reference direction DA is set as follows.

[0171] First, the shift amount L is calculated based on the basic reference information. Next, a position away from the reference point in the start point setting direction, where the set distance is equal to the shift amount L, is set as the position of the contact start point SL1 in the reference direction DA. Examples of the method for calculating the shift amount L include first to third calculation methods.

[0172] In the first calculation method, the shift amount L is calculated based on information indicating the substrate thickness T and a first shift amount table.

[0173] In the second calculation method, the shift amount L is calculated based on information indicating the off-angle θ, information indicating the substrate thickness T, and a second shift amount table.

[0174] In the third calculation method, the shift amount L is calculated based on information indicating the off-angle θ, information indicating the substrate thickness T, and a shift amount calculation formula.

[0175] In one example, the position of the reference point on the work surface is set based on information indicating the reference point and image information of the workpiece 100. In one example, the imaging device 30 outputs the image of the workpiece 100 that has been photographed as image information of the workpiece 100.

[0176] In one example, the vertical position of the contact initiation point SL1 in the cross direction DB is set based on the information indicating the vertical position of the contact initiation point SL1. In one example, the vertical position of the contact initiation point SL1 is set to an arbitrary position on the main surface 201 away from the edge of the single-crystal substrate 200.

[0177] For the scribe line SL, which is the starting point of the inclined division, the position of the contact starting point SL1 in the reference direction DA and the position of the contact starting point SL1 in the cross direction DB are set, thereby setting the position of the contact starting point SL1 on the workpiece surface.

[0178] (Street 141 and Contact Start Point SL1) Referring to Fig. 12, the street 141 includes a first edge 141A spaced apart in the direction of the forward component from a street center 141C, and a second edge 141B spaced apart in the start point setting direction from the street center 141C.

[0179] The dimension of the street 141 in a direction perpendicular to the direction in which the street 141 extends is referred to as the “street width WS.” In one example, the street width WS is defined as the distance between the first edge 141A and the second edge 141B in the reference cross section.

[0180] In one example, the street width WS is set in accordance with the relationship with the shift amount L. Examples of the relationship between the street width WS and the shift amount L include first to third relationships.

[0181] In the first relationship, the street width WS is greater than the shift amount L. In the second relationship, the street width WS is less than the shift amount L. In the third relationship, the street width WS is equal to the shift amount L.

[0182] As the street width WS increases, the cleavage plane periphery FCA is less likely to be formed outside the street 141. As the street width WS decreases, the volume of the street 141 in the workpiece 100 decreases. This contributes to increasing the number of single crystal products 100X that can be obtained, for example.

[0183] In one example, the first relationship is selected, a width less than twice the shift amount L is selected as the street width WS, and a position on the first edge 141A side of the street center 141C is selected as the reference point. The position of the contact start point SL1 in the reference direction DA is set on the street 141 or the dummy region 142.

[0184] In one example, the first relationship is selected, the street width WS is selected to be less than twice the shift amount L, and a position on the second edge 141B side of the street center 141C is selected as the reference point. The position of the contact start point SL1 in the reference direction DA is set on the dummy area 142.

[0185] In one example, the first relationship is selected, a width less than twice the shift amount L is selected as the street width WS, and the street center 141C is selected as the reference point. The position of the contact start point SL1 in the reference direction DA is set on the dummy region 142.

[0186] In one example, the first relationship is selected, the street width WS is selected to be at least twice the shift amount L, and a position on the first edge 141A side of the street center 141C is selected as the reference point. The position of the contact start point SL1 in the reference direction DA is set on the street 141.

[0187] In one example, the first relationship is selected, the street width WS is selected to be at least twice the shift amount L, and a position on the second edge 141B side of the street center 141C is selected as the reference point. The position of the contact start point SL1 in the reference direction DA is set on the street 141 or the dummy area 142.

[0188] In one example, the first relationship is selected, the street width WS is selected to be at least twice the shift amount L, and the street center 141C is selected as the reference point. The position of the contact start point SL1 in the reference direction DA is set on the street 141.

[0189] In one example, the second relationship is selected, and a position on the street 141 is selected as the reference point. The position of the contact start point SL1 in the reference direction DA is set on the dummy area 142.

[0190] In one example, the third relationship is selected, and the first edge 141A is selected as the reference point. The position of the contact start point SL1 in the reference direction DA is set on the second edge 141B.

[0191] In one example, the third relationship is selected, and a position other than the first edge 141A on the street 141 is selected as the reference point. The position of the contact start point SL1 in the reference direction DA is set on the dummy region 142.

[0192] In one example, regardless of which of the first to third relationships is selected, the reference point is selected so that the position of the contact start point SL1 in the reference direction DA is not set on the main region 130.

[0193] In one example, a reference point is set on a dummy area 142 provided on the traveling direction component side or the start point setting direction side of a street 141 .

[0194] 1, 2, 12, and 13. In one example, the control unit 81 executes scribing control for scribing the workpiece 100. In one example, the control-related information includes a program referenced to execute the scribing control.

[0195] In one example, when formation of a first type of scribe line SL is planned, the scribe control includes vertical division correspondence control based on a vertical division correspondence setting method.

[0196] In one example, when formation of the second type of scribe line SL is planned, the scribe control includes tilt division correspondence control based on a tilt division correspondence setting method.

[0197] The tilt division corresponding control includes steps S11 to S14. In one example, the control unit 81 executes each step in order starting from step S11 to form one scribe line SL. In one example, after the process of step S14 is completed, the control unit 81 executes steps S11 to S14 to form the next scribe line SL.

[0198] In step S11, the control unit 81 acquires basic reference information. In one example, the control unit 81 acquires the basic reference information from the storage unit 82 or a user interface. In one example, the control unit 81 acquires, as the basic reference information, information indicating the off-angle θ, information indicating the substrate thickness T, a shift amount table for calculating the shift amount L, information indicating the reference point, information indicating the start point setting direction, information indicating the vertical position of the contact start point SL1, and image information of the workpiece 100.

[0199] In one example, the information indicating the substrate thickness T is acquired from a measurement unit of the processing device 40. In one example, the measurement unit of the processing device 40 includes a sensor that measures the substrate thickness T.

[0200] Examples of sensors for measuring the substrate thickness T include contact sensors and non-contact sensors. Examples of contact sensors include digital gauge sensors. Examples of non-contact sensors include laser sensors, spectroscopic interference sensors, and capacitance sensors.

[0201] In step S12, the control unit 81 calculates the shift amount L based on the basic reference information. In one example, the control unit 81 calculates the shift amount L based on a first shift amount table corresponding to the off-angle θ and the substrate thickness T.

[0202] In step S13, the control unit 81 sets the position of the contact start point SL1 with respect to the reference direction DA based on the shift amount L, information indicating the reference point, information indicating the start point setting direction, and image information of the workpiece 100. In one example, the control unit 81 sets the position of the contact start point SL1 with respect to the reference direction DA to a position away from the reference point in the start point setting direction and at a position where the set distance is equal to the shift amount L.

[0203] In one example, the control unit 81 sets the position of the contact start point SL1 with respect to the reference direction DA so that the cleavage plane peripheral edge FCA is positioned at the margin area center 140C or the street center 141C. In one example, the control unit 81 sets the position of the contact start point SL1 with respect to the reference direction DA so that the set distance increases as the substrate thickness T increases.

[0204] In one example, the control unit 81 sets the vertical position of the contact start point SL1 based on information indicating the vertical position of the contact start point SL1.

[0205] In step S14, the control unit 81 controls the scribe head 50 so that the tip of the cutting edge 73A of the wheel 73 contacts the contact start point SL1 of the workpiece 100. The control unit 81 then controls the scribe head 50 so that the travel distance of the wheel 73 relative to the workpiece 100 is a predetermined distance.

[0206] When the travel distance of the wheel 73 relative to the workpiece 100 reaches a predetermined distance, the cutting edge 73A of the wheel 73 is positioned at the contact end point SL2. The control unit 81 controls the scribe head 50 so that the wheel 73 transitions from the contact state to the non-contact state.

[0207] (Effects) The following effects can be given as examples of effects obtained by the embodiment.

[0208] In one example, the control unit 81 controls the position of the contact start point SL1 in the reference direction DA in accordance with the thickness T of the substrate.

[0209] The above configuration provides the following advantages, for example: The position of the cleavage plane peripheral edge FCA relative to the contact start point SL1 relative to the reference direction DA varies depending on the substrate thickness T. By controlling the position of the contact start point SL1 relative to the reference direction DA in accordance with the substrate thickness T, the position of the cleavage plane peripheral edge FCA relative to the reference direction DA can be controlled. This is expected to improve the quality of the single crystal product 100X.

[0210] In one example, the control unit 81 controls the position of the contact start point SL1 based on the off angle θ and the substrate thickness T.

[0211] According to the above-described configuration, for example, the following effects can be obtained: The position of the cleavage plane periphery FCA can be more appropriately controlled.

[0212] In one example, the control unit 81 controls the position of the contact start point SL1 based on the calculation result of the formula "T×tan θ".

[0213] According to the above-described configuration, for example, the following effects can be obtained: The position of the cleavage plane periphery FCA can be more appropriately controlled.

[0214] In one example, the control unit 81 controls the position of the contact starting point SL1 so that the cleavage plane peripheral edge FCA of the single crystal substrate 200 formed by the breaking process is positioned in the margin region 140.

[0215] According to the above configuration, for example, the following effects can be obtained: The quality of the single crystal product 100X can be expected to be improved.

[0216] In one example, the control unit 81 controls the position of the contact start point SL1 so that the cleavage plane periphery FCA is positioned at the margin area center 140C.

[0217] According to the above configuration, for example, the following effects can be obtained: The quality of the single crystal product 100X can be expected to be improved.

[0218] In one example, the control unit 81 controls the position of the contact start point SL1 so that the distance between the marginal area center 140C and the contact start point SL1 increases as the substrate thickness T increases.

[0219] The above configuration provides the following advantages, for example: The position of the cleavage plane peripheral edge FCA is brought closer to the marginal region center 140C, and the quality of the single crystal product 100X is expected to improve.

[0220] In one example, when single crystal substrate 200 is semiconductor substrate 200A, control unit 81 controls wheel 73 so that scribe line SL is formed on main surface 201, which is the back surface of semiconductor substrate 200A.

[0221] The above-described configuration provides the following advantages, for example: The surface of the semiconductor substrate 200A is less susceptible to the effects of scribing.

[0222] In one example, the scribing device 10 includes a processing device 40 including a wheel 73 and a control device 80 that controls the processing device 40 .

[0223] According to the above configuration, for example, the following effects can be obtained: The quality of the single crystal product 100X can be expected to be improved.

[0224] In one example, in the scribing method, in the step of forming a scribe line SL parallel to the intersection line LF between a reference crystal plane and the main surface 201, the position of the contact starting point SL1 relative to the reference direction DA parallel to the main surface 201 in a reference cross section perpendicular to the intersection line LF is controlled according to the substrate thickness T.

[0225] According to the above configuration, for example, the following effects can be obtained: The quality of the single crystal product 100X can be expected to be improved.

[0226] It should be noted that the possible forms of the scribing device control device, scribing device, and scribing method related to the present invention are not limited to the explanations given in the above embodiments. The scribing device control device, scribing device, and scribing method related to the present invention may take forms different from those exemplified in the embodiments. Examples of such forms include forms in which part of the configuration of the embodiments is replaced, changed, or omitted, or forms in which new configurations are added to the embodiments.

[0227] 10: Scribing device 40: Processing device 73: Wheel 80: Control device 81: Control unit 100: Workpiece 100X: Single crystal product 140: Blank area 200: Single crystal substrate 200A: Semiconductor substrate 201: Main surface θ: Off-angle FCA: Cleavage plane periphery LF: Intersection line SL: Scribe line SL1: Contact start point

Claims

1. A control device for a scribing device including a control unit that controls the position of a wheel that forms a scribe line on a workpiece including a single crystal substrate having an off angle, which is the angle of the main surface with respect to a reference crystal plane, wherein the contact position of the wheel with respect to the workpiece when the wheel transitions from a non-contact state in which it does not contact the workpiece to a contact state in which the wheel contacts the workpiece is called a contact starting point, and the control unit controls the position of the contact starting point in a direction parallel to the main surface in a cross section perpendicular to the intersection line in accordance with the thickness of the single crystal substrate in a process of forming the scribe line parallel to the intersection line between the reference crystal plane and the main surface.

2. The control device for the scribing device according to claim 1, wherein the control unit controls the position of the contact starting point based on the off-angle and the thickness of the single crystal substrate.

3. The control device for the scribing device described in claim 2, wherein the control unit controls the position of the contact starting point based on the calculation result of the formula "T x tan θ", where T is the thickness of the single crystal substrate and θ is the off-angle.

4. A control device for a scribing device according to claim 1, wherein the control unit controls the position of the contact initiation point so that the peripheral edge of the cleavage plane of the single crystal substrate formed by breaking processing is positioned in a margin area.

5. A control device for a scribing device according to claim 4, wherein the control unit controls the position of the contact start point so that the peripheral edge of the cleavage plane is positioned at the center of the marginal area.

6. A control device for a scribing device according to claim 4, wherein the control unit controls the position of the contact starting point so that the distance between the center of the marginal area and the contact starting point becomes longer as the thickness of the single crystal substrate increases.

7. A control device for a scribing device according to claim 1, wherein, when the single crystal substrate is a semiconductor substrate, the control unit controls the wheel so that the scribe line is formed on the main surface, which is the back surface of the semiconductor substrate.

8. A scribing device comprising: a processing device including the wheel; and a scribing device control device according to any one of claims 1 to 7 that controls the processing device.

9. A scribing method for controlling the position of a wheel that forms a scribe line on a workpiece including a single crystal substrate having an off angle, which is the angle of the main surface with respect to a reference crystal plane, wherein the contact position of the wheel with respect to the workpiece when the wheel transitions from a non-contact state in which it does not contact the workpiece to a contact state in which the wheel contacts the workpiece is called a contact starting point, and in a step of forming the scribe line parallel to the intersection line between the reference crystal plane and the main surface, the position of the contact starting point in a direction parallel to the main surface in a cross section perpendicular to the intersection line is controlled in accordance with the thickness of the single crystal substrate.

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