The first attempt descripting of e+ and weyl fermion as beam / current for pump / injection semiconductor devices

Abstract

The aim of the present beam source is to develop a positron µbeam, which permits it to be the first attempt to describe e+ as beam / current as Pump / Injection semiconductor devices. The concept of type I: positron beam source is to be an alternative source to electron beam and to harness the generation of γ-ray radiations inside the semiconductor heterostructures. Also, type II: Weyl fermions for its high mobility are described how they used a beam of antimatter particles to not only examine for defects in a semiconductor as well as for semiconductor devices injection. Type I: the positron beam's high energies (up to several hundred keV or even tens of MeV), but the limit should follow the same electron range because it is possible to convert an electron into a positron and use either one as a source for pumping materials. This will prevent defects from forming in positron-pumped materials, which would cause a rapid degradation of the materials properties. Type II: the transformation to Weyl fermions, which are considered to carry electric charge via a device far more quickly than ordinary electrons. Weyl electrons are considered to transfer electric current at least twice as quickly as graphene electrons and at least 1,000 times faster than electrons in ordinary semiconductors, according to the most recent studies. In an effort to further this field of study, this patent is harnessing the Weyl electrons as beam / current in Pump / Injection semiconductor devices.

Description

[0001] The first attempt descripting of e+and Weyl fermion as beam / current for pump / inj ection semiconductor devices

[0002] An innovative type of carrier source based on positronic transport and Weyl fermions is given special consideration. The aim is to build on the concept of “positron injection” for positron beam pumped semiconductor-based devices of type I: positron source and type II: Weyl fermions for its high mobility.

[0003] This paper describes how a beam of antimatter particles is used to examine for defects in a semiconductor as well as for pump / injection semiconductor devices. Demonstrating the capabilities of this type of beam generator and their use in novel applications, carrier sources created in the lab that operate in the CW and pulsed modes will excite the (Al,Ga)N system. Pairs of electrons and positrons (antimatter electrons) are created using enough accelerated particles or gamma rays.

[0004] While most heterostructure semiconductor components were injected with a single charge type, like electrons, the foundation for modern semiconductors is based on multiple charge types, resulting in superior transport qualities across the active layer. The advantage is the fast radiative lifetime associated with positron charge properties.

[0005] The aim of the present project is to develop a positron microbeam as the first attempt to describe e+and Weyl fermion as beam / current for semiconductor devices pump / injection. Therefore, harnessing other charged carriers rather than electrons originates from this concept to address the potential for the electron’s charge state to flip into e+.

[0006] Based on the demand for an improvement of various corpuscle types of current injection, the objective of this technique is to provide a new concept of carrier generators for optoelectronics pump and injection devices.

[0007] This investigation is conducted to improve current injection by using a particle other than the electron. The idea was conceived from condensed matter physics for a technique to implement positron as carrier transport in semiconductors with the source based on localized emissions.

[0008] A radioactive source such as22Na source is incident on a tungsten vane moderator, thus having positive electrons flowing and tunneling as well as a laser-driven high-quality positron into semiconductor-based devices.

[0009] Also, Tantalum arsenide (TaAs) hosting Weyl particles has been discovered to hold significant potential for cutting-edge technological uses. Through different carriers, injection and their behavior in semiconductors will lead to the birth of solid state opto-electronics with different carrier injection that possesses high-energy (100-500 keV) and the possibility of maximum energy that is approximately several tens of MeV.

[0010] Significantly, these various carrier sources have a larger range of operational settings and output characteristics due to their various underlying emission principles, thus obtaining greater kinetic energy for a positron.

[0011] The transformation to Weyl fermions carries electric charge via a device far more quickly than ordinary electrons, therefore unlocking the potential of new materials with unusual transport properties.

[0012] Figure 1. (a) Type I and II: beam pumped UVC emitters.

[0013] Figure 1. (b) Type I: e+ using a 22Na to incident the W vane.

[0014] Figure 1. (c) Type II: TaAs as a host of Weyl fermions.

[0015] Descripting of e+and Weyl fermion as beam / current for pump / injection semiconductor devices:

[0016] 1- Harnessing the e+and Weyl fermion (quasiparticles) Figure 1. (a) originated in this concept of attempting to describe other carriers as beam / current for semiconductor devices pump / inj ection, which is invented for advancing the semiconductors. Type I: the positron beam's high energies Figure 1. (a) (up to several hundred keV or even tens of MeV), but the limit should follow the same electron range because it is possible to convert an electron into a positron and use either one as a source for pumping materials.

[0017] This will prevent defects from forming in positron-pumped materials, which would cause a rapid degradation of the materials properties.

[0018] Type II: the transformation to Weyl fermions Figure 1. (c), which are considered to carry electric charge via a device far more quickly than ordinary electrons.

[0019] Weyl electrons are considered to transfer electric current at least twice as quickly as graphene electrons and at least 1,000 times faster than electrons in ordinary semiconductors, according to the most recent studies.

Claims

The first attempt descripting of e+and Weyl fermion as beam / current for pump / injection semiconductor devicesDescripting of e+ and Weyl fermion as beam / current for pump / injection semiconductor devices:Type I and II: beam sources for pumped UVC emitters,1- Type I: e+ using a22Na to incident the W vane.2- Type II: TaAs as a host of Weyl fermions.

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