Method for producing an optoelectronic component and corresponding optoelectronic component

Abstract

A method for producing an optoelectronic component (1) is specified. The method comprises: - providing a carrier (2) with contacting regions (21); - applying a flux composition (3) on the contacting regions (21), wherein the flux composition (3) comprises a flux material (31) and coloring particles (32); - arranging an optoelectronic semiconductor chip (4) on the flux composition (3); and - fixing the optoelectronic semiconductor chip (4) to the contacting regions (21) via a solder material (5). The optoelectronic component (1) produced is transparent for electromagnetic radiation (6) in the visible range. Furthermore, a corresponding optoelectronic component (1) is also specified. In particular, the optoelectronic component (1) comprises a micro-LED as semiconductor chip (4).

Description

[0001] Description

[0002] METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND CORRESPONDING OPTOELECTRONIC COMPONENT

[0003] A method for producing an optoelectronic component and an optoelectronic component are speci fied .

[0004] It is an obj ect of the present application to provide a simple and ef ficient method for producing an optoelectronic component . Furthermore , an optoelectronic component with an increased ef ficiency shall be provided .

[0005] According to an embodiment , the method for producing an optoelectronic component comprises providing a carrier . In particular, the carrier comprises contacting regions . The contacting regions are configured to provide an optoelectronic semiconductor chip connected with the contacting regions with electrical current . Particularly, the contacting regions are electrically conductive and electrically isolated against each other . Furthermore , the carrier is able to provide mechanical stability to the optoelectronic semiconductor chip arranged thereon . For example , the carrier is transparent for electromagnetic radiation in the visible to infrared range .

[0006] In particular, the carrier comprises a base body and a conductor track . The conductor track is , for example , arranged on the base body . The base body may be transparent for electromagnetic radiation in the visible to infrared range . The conductor track, in particular, comprises the contacting regions . For example , a part of the conductor track forms the contacting regions . According to an embodiment of the method, a flux composition is applied on the contacting regions . In particular, the flux composition comprises or consists of a flux material and coloring particles . For example , the coloring particles are at least partially embedded in the flux material . The flux composition is , for instance , a suspension of the coloring particles in the flux material . The flux material comprises , for example , an acid such as an organic acid .

[0007] In particular, the coloring particles cause the flux composition to have a color . Here and in the following, also white and black are to be understood as a color . For example , the coloring particles are thermally and / or electrically conductive .

[0008] In particular, the flux composition further comprises a solvent and / or a thixotropic agent . With these components a viscosity of the flux composition can advantageously be adj usted, for example to obtain a desired viscosity for application to the contacting regions . Furthermore , the flux composition may comprise a resin such as rosin . A common resin is , for example , colophony .

[0009] According to an embodiment of the method, an optoelectronic semiconductor chip is arranged on the flux composition . In particular, the optoelectronic semiconductor chip is arranged on the contacting regions . For example , the optoelectronic is in direct mechanical contact with the flux composition after being arranged thereon . In other words , the optoelectronic semiconductor chip is , for instance , applied to the flux composition . The optoelectronic semiconductor chip is , for example , configured to emit electromagnetic radiation, in particular in the visible range .

[0010] For example , the optoelectronic semiconductor chip is applied using laser induced forward trans fer ( LI FT ) or a pick and place process . During laser induced forward trans fer, a component such as the optoelectronic semiconductor chip is trans ferred from a donor substrate to the desired position on a receiving substrate such as the carrier . For the trans fer, the component is irradiated through the donor substrate with pulsed electromagnetic radiation generated by a laser such that a connection of the component with the donor substrate is destroyed . The component is thus ej ected from the donor substrate and is deposited on the desired position of the receiving substrate . At the desired position, the component is captured with a tacky material such as a tacky flux material , for example the flux composition . Instead of the pulsed electromagnetic radiation generated by a laser intense irradiation or heat can be used to destroy the connection of the component with the donor substrate .

[0011] According to an embodiment of the method, the optoelectronic semiconductor chip is fixed to the contacting regions via a solder material . In other words , the optoelectronic semiconductor chip is soldered to the contacting regions . The solder material is , in particular, arranged between the optoelectronic semiconductor chip and the contacting regions . Advantageously, the solder material ensures an electrical contact between the optoelectronic semiconductor chip and the contacting regions . Furthermore , the solder material mechanically connects the optoelectronic semiconductor chip and the contacting regions . In other words , the solder material forms a mechanical and electrical connection between the optoelectronic semiconductor chip and the contacting regions .

[0012] According to an embodiment , the method for producing an optoelectronic semiconductor component comprises :

[0013] - providing a carrier with contacting regions ,

[0014] - applying a flux composition on the contacting regions , wherein the flux composition comprises a flux material and coloring particles ,

[0015] - arranging an optoelectronic semiconductor chip on the flux composition, and

[0016] - fixing the optoelectronic semiconductor chip to the contacting regions via a solder material .

[0017] It is an idea of the present application to use a flux composition with coloring particles to improve the process of fixing the optoelectronic semiconductor chip to the contacting regions . Due to the flux composition, in particular the flux material of the flux composition, oxides and, for example organic, contaminations can be removed from the contacting regions , the optoelectronic semiconductor chip, and the solder material . This leads to a more reliable connection between the optoelectronic semiconductor chip and the contacting region . Furthermore , the flux composition increases a wettability of the contacting regions with the solder material .

[0018] According to an embodiment of the method, the flux composition, in particular the flux material , comprises tacky properties . Thus , the flux composition can be used to capture the optoelectronic semiconductor chip during applying the optoelectronic semiconductor chip, in particular during laser induced forward trans fer . According to an embodiment of the method, fixing the optoelectronic semiconductor chip to the contacting regions is performed using electromagnetic radiation, in particular pulsed electromagnetic radiation . In particular, during fixing the optoelectronic semiconductor chip to the contacting regions , the optoelectronic semiconductor chip is irradiated with the electromagnetic radiation . The electromagnetic radiation is , for example , provided by a laser or a high energy flash lamp such as a Xe flash lamp . The electromagnetic radiation is particularly used to heat the solder material such that it is at least partially melted . Then, a connection between the optoelectronic semiconductor chip and the contacting regions can be formed via the solder material . The process of using the electromagnetic radiation to generate the connection between the optoelectronic semiconductor chip and the contacting regions via the solder material is , for instance , called photonic soldering .

[0019] In particular, a mask such as a shadow mask is used during fixing the optoelectronic semiconductor chip to the contacting regions performed using the electromagnetic radiation . Due to the mask, only the regions which shall be heated, that is only the optoelectronic semiconductor chip and closely surrounding regions of the carrier, can advantageously be treated with the electromagnetic radiation and can thus be heated . This ensures that a thermal impact on the carrier is as low as possible .

[0020] According to an embodiment of the method, a particle si ze of the coloring agent is at most 15 micrometers , in particular at most 10 micrometers , for example at most 5 micrometers . Such particle si zes advantageously leads to a flux composition that can be ef ficiently applied on the contacting regions .

[0021] According to an embodiment of the method, the coloring particles absorb the electromagnetic radiation used during fixing the optoelectronic semiconductor chip to the contacting regions . In particular, the coloring particles trans fer the absorbed energy of the electromagnetic radiation to the solder material . Thus , the power of the electromagnetic radiation is better coupled into the connection between the optoelectronic semiconductor chip and the contacting regions . Therefore , fixing the optoelectronic semiconductor chip to the contacting regions is improved . For example , the coloring particles absorbing the electromagnetic radiation used during fixing the optoelectronic semiconductor chip to the contacting regions are black . In particular, the coloring particles are selected from the group consisting of M0S2 , carbon nanotubes , graphene , carbon black, and combinations thereof . For instance , carbon black is used as coloring particles .

[0022] According to an embodiment of the method, the coloring particles are di f fusely reflective for electromagnetic radiation emitted by the optoelectronic semiconductor chip . In particular, the coloring particles comprise or consist of a white pigment such as TiCy , SiCy , BaSCy , a transparent conductive oxide , gold, nickel , chromium, silver, aluminum, and combinations thereof . The transparent conductive oxide is , for example , indium tin oxide ( ITO) , antimony tin oxide (ATO) , fluorine tin oxide ( FTO) or aluminum zinc oxide (AZO) . Advantageously, the di f fusely reflective coloring particles reflect the electromagnetic radiation emitted by the optoelectronic semiconductor chip . Thus , an emission of electromagnetic radiation through the carrier can at least be reduced .

[0023] In particular, the di f fusely reflective coloring particles of fer a simple and ef ficient method to prevent an emission of electromagnetic radiation through the carrier . In other optoelectronic components an emission through the carrier is prevented by absorbing or reflecting structures . These are however designed in such a way that the optoelectronic component is not transparent . Presently, the di f fusely reflecting particles are only arranged in the region of the contacting regions such that it is still possible to obtain a transparent optoelectronic component .

[0024] According to at least one embodiment of the method, the flux composition has a higher thermal and / or electrical conductivity than the flux material alone . In particular, the flux composition can be thermally and / or electrically conductive . The increase in the thermal and / or electrical conductivity is due to the presence of the coloring particles . For example , the coloring particles have a higher electrical conductivity compared to the flux material .

[0025] It is possible that a part of flux composition, in particular a part of the coloring particles , remains between the optoelectronic semiconductor chip and the contacting region during fixing the optoelectronic semiconductor chip to the contacting regions via the solder material . In other words , the flux composition, in particular the coloring particles , can be embedded in the solder material . Thus , it is advantageous that the flux composition, in particular the coloring particles , is electrically conductive to ensure that the optoelectronic semiconductor chip is electrically conductively connected with the contacting regions via the solder material .

[0026] According to an embodiment of the method, carbon black is used as coloring particles . Advantageously, carbon black has a high absorptivity for the electromagnetic radiation used during fixing the optoelectronic semiconductor chip to the contacting regions . Additionally, carbon black shows a high thermal and electrical conductivity . Thus , the connection between the optoelectronic semiconductor chip and the contacting regions is not adversely af fected by the carbon black . Particularly, carbon black comprises or consists of carbon and has a black appearance .

[0027] According to an embodiment of the method, the flux composition comprises at most 20 wt% of the coloring particles , in particular at most 10 wt% , for instance at most 5 wt% , for example at most 2 wt% . Such a low content of the coloring particles in the flux composition ensures that a short circuit of the optoelectronic semiconductor chip is prevented, while still a coloring of the flux composition is suf ficient to obtain the desired absorptivity and / or reflectivity of the flux composition . The absorptivity of the flux composition can be determined by absorption spectroscopy in the ultraviolet , visible , or infrared range .

[0028] According to an embodiment of the method, applying the flux composition to the contacting regions is performed by screen printing, stencil printing, dispensing, j etting, laser induced forward trans fer ( LI FT ) , spin coating, or slit coating . Screen printing, stencil printing, dispensing, j etting, and LI FT can be used to selectively apply the flux composition only in the region of the contacting regions . In contrast , using spin coating or slit coating, the carrier can be completely covered with the flux composition .

[0029] According to an embodiment of the method, the flux composition is removed at least partially after fixing the optoelectronic semiconductor chip to the contacting regions . In particular, the flux composition is removed i f the carrier is completely covered with the flux composition . It is possible that a part of the flux composition remains in the optoelectronic component , for instance between the optoelectronic semiconductor chip and the carrier, in particular even after the removal of the flux composition . For example , a part of the flux composition, in particular a part of the coloring particles , remain in the solder material after fixing the optoelectronic semiconductor chip to the contacting regions even though the flux composition is removed . Particularly, the flux composition remains only between the contacting regions , while the rest of the carrier is free of the flux composition .

[0030] In particular, the flux composition is removed by washing away, for example with a solvent , or by incinerating, for example using plasma .

[0031] According to an embodiment of the method, the optoelectronic semiconductor chip is provided with the solder material before arranging on the flux composition . In particular, the solder material is applied to contact pads of the optoelectronic semiconductor chip .

[0032] According to an embodiment of the method, the flux composition further comprises the solder material . In particular, the solder material is homogeneously distributed in the flux composition . Additionally or alternatively, the flux composition comprising the solder material is only selectively applied to the contacting regions such that no short circuit occurs .

[0033] According to an embodiment of the method, the solder material comprises or consists of a material selected from the group consisting of Sn, AgSn, AgCu, SnBi , AuSn, and combinations thereof .

[0034] Furthermore , an optoelectronic component is speci fied . In particular, the optoelectronic component is produced by the method described herein . Thus , all embodiments , features , and advantages of the method also apply to the optoelectronic component and vice versa .

[0035] According to an embodiment , the optoelectronic component comprises a carrier with contacting regions . In particular, the carrier is transparent for electromagnetic radiation, for example in the visible range .

[0036] According to an embodiment , the optoelectronic component comprises an optoelectronic semiconductor chip . The optoelectronic semiconductor chip is particularly designed to emit electromagnetic radiation, for example in the visible range . In particular, the optoelectronic semiconductor chip is a light emitting diode chip ( LED chip ) .

[0037] For instance , the optoelectronic component comprises a plurality of optoelectronic semiconductor chips , for example between and including 10 to 10 , 000 . The optoelectronic semiconductor chips of the plurality of optoelectronic semiconductor chips can be the same or di f ferent . For example , the optoelectronic semiconductor chips di f fer in the emitted electromagnetic radiation . In the following, all features described for the optoelectronic semiconductor chip can apply to each of the optoelectronic semiconductor chips of the plurality of optoelectronic semiconductor chips .

[0038] According to an embodiment , the optoelectronic component comprises a flux composition . The flux composition comprises or consists of a flux material and coloring particles . In particular, the coloring particles are distributed in the flux material . Due to the coloring particles the flux material comprises , for example , a color .

[0039] According to an embodiment of the optoelectronic component , the optoelectronic semiconductor chip is electrically conductively connected to the contacting regions via a solder material . In other words , the solder material establishes an electrical connection between the optoelectronic semiconductor chip and the contacting regions . The solder material can also mechanically connect the optoelectronic semiconductor chip and the contacting regions .

[0040] According to an embodiment of the optoelectronic semiconductor chip, the flux composition is arranged in the region of the contacting regions . In particular, the flux composition is adj acent to or abuts the contacting regions . The flux composition or at least a part or a component of the flux composition is , for example , present in the solder material .

[0041] According to an embodiment , the optoelectronic component comprises the carrier with contacting regions , the optoelectronic semiconductor chip, and the flux composition comprising the flux material and coloring particles , wherein the optoelectronic semiconductor chip is electrically conductively connected to the contacting regions via the solder material , and the flux composition is arranged in the region of the contacting regions .

[0042] In particular, the optoelectronic component is transparent for electromagnetic radiation in the visible range . Thus , the optoelectronic component can be used in a transparent display .

[0043] Furthermore , it is possible that the optoelectronic component is used in a brake light of a motor vehicle . In this regard, it is advantageous that the di f fuse reflective coloring particles prevent an emission of the optoelectronic semiconductor chip through the carrier . Thus , the optoelectronic component can be incorporated as break light in a rear window without blinding the driver when the optoelectronic component is operated .

[0044] According to an embodiment of the optoelectronic component , the optoelectronic semiconductor chip is a flip-chip . Here and in the following, a flip-chip is an optoelectronic semiconductor chip having both contact pads on one side . In particular, the flip-chip comprises a substrate , for example a sapphire substrate , through which the electromagnetic radiation generated by the optoelectronic semiconductor chip is emitted . The flip-chip is , for instance , not electrically connected to the carrier via bond wires . A radiation exit surface of the flip-chip is , particularly, free of contact pads configured for electrically connection of the flip-chip . According to an embodiment of the optoelectronic component , the optoelectronic semiconductor chip is a mini-LED .

[0045] According to an embodiment of the optoelectronic component , the optoelectronic semiconductor chip comprises or is a micro-LED .

[0046] As a broad definition, a micro-LED could be seen as any light emitting diode with a particularly small si ze . Micro-LEDs may comprise a width, a length, a thickness and / or a diameter smaller than or equal to 100 micrometers , in particular, smaller than or equal to 70 micrometers , for example smaller than or equal to 50 micrometers . In particular, micro-LEDs , for example rectangular micro-LEDs , have an edge length, in particular in plan view of layers of a semiconductor layer sequence , of the radiation exit surface smaller than or equal to 70 micrometers , for example smaller than or equal to 50 micrometers . For example , a micro-LED is a light emitting diode with a growth substrate removed, such that a thickness of the micro-LED is in the range between and including, for example , 1 . 5 micrometers and 10 micrometers . For example , the micro-LED is provided on a wafer having releasable retaining structures . The micro-LED can be detached from the wafer in a non-destructive manner .

[0047] In particular, micro-LEDs are mainly used in displays . The micro-LEDs form pixels or subpixels and emit light of a defined color . Small pixel si ze and a high density with close distances make micro-LEDs suitable , among others , for small monolithic displays for augmented reality applications , especially data glasses . In addition, other applications are being developed, in particular regarding the use in data communication or pixelated lighting applications . According to an embodiment of the optoelectronic component , the carrier comprises a transparent base body and a conductor track . The conductor track comprises the contacting regions . In particular, the conductor track is arranged on the base body . The base body is , for example , transparent for electromagnetic radiation, for instance in the visible range . The base body can be at least 80% , in particular at least 90% , for example at least 95% transparent for electromagnetic radiation in the visible range . The base body particularly comprises or consists of a polymer, for example polyethylene terephthalate ( PET ) , polyethylene naphthalate ( PEN) , poly carbonate ( PC ) , poly (methyl methacrylate ) ( PMMA) , polyethersul fone ( PES ) , colorless polyimide , and combinations thereof . A thickness of the base body is for example between and including 50 micrometers to 200 micrometers . The conductor track particularly comprises or consists of a metal such as Cu .

[0048] According to an embodiment of the optoelectronic component , the flux composition is arranged between the optoelectronic semiconductor chip and the carrier, in particular between the optoelectronic semiconductor chip and the base body . It is also possible that the flux composition is arranged between the optoelectronic semiconductor chip and the contacting regions .

[0049] According to an embodiment , the optoelectronic component further comprises a cover . In particular, the cover is arranged on a side of the optoelectronic semiconductor chip facing away from the carrier . In other words , the optoelectronic semiconductor chip is arranged between the cover and the carrier . The cover advantageously protects the optoelectronic semiconductor chip from environmental influences such as humidity . The cover also improves a mechanical stability of the optoelectronic component . For example , the cover comprises or consists of a material selected from the group consisting of glass and a polymer such as poly (methyl methacrylate ) ( PMMA) .

[0050] According to an embodiment , the optoelectronic component further comprises a protective layer . In particular, the protective layer encapsulates the optoelectronic semiconductor chip . In other words , the optoelectronic semiconductor chip is embedded in the protective layer . The cover is , for example , arranged on the protective layer . The protective layer advantageously improves a mechanical stability of the optoelectronic component . Furthermore , the protective layer hinders deleterious species such as water reaching the optoelectronic semiconductor chip . The protective layer can also be used for planari zation . For example , the protective layer comprises or consists of a polymer such as a polysiloxane , a silicone , or a plastic . The plastic is , for instance , polyvinyl butyral ( PVB ) .

[0051] According to an embodiment , the optoelectronic component comprises a substrate . In particular, the substrate is arranged on a side of the carrier facing away from the optoelectronic semiconductor chip . In other words , the carrier is arranged between the optoelectronic semiconductor chip and the substrate . Advantageously, the substrate improves a mechanical stability of the optoelectronic component . The substrate , for example , comprises or consists of a material selected from the group consisting of glass and a polymer such as poly (methyl methacrylate ) ( PMMA) . According to an embodiment , the optoelectronic component further comprises an adhesive layer . In particular, the adhesive layer adheres the substrate to the side of the carrier facing away from the optoelectronic semiconductor chip . For example , the adhesive layer comprises or consists of a polymer such as a polysiloxane , a silicone , or a plastic . The plastic can be polyvinyl butyral ( PVB ) . Advantageously, the adhesive layer ensures an ef ficient connection between the substrate and the carrier .

[0052] In particular, the cover, the protective layer, the substrate and / or the adhesive layer are transparent to electromagnetic radiation in the visible range , for example emitted by the by the optoelectronic semiconductor chip . In particular, the cover the protective layer, the substrate and / or the adhesive layer comprises a transparency for visible electromagnetic radiation of at least 80% , in particular at least 90% , for example at least 95% . This advantageously ensures that the optoelectronic component is transparent for visible electromagnetic radiation .

[0053] Advantageous embodiments and developments of the method for producing an optoelectronic component and the optoelectronic component will become apparent from the exemplary embodiments described below in conj unction with the figures .

[0054] In the figures :

[0055] Figures 1 to 5 show schematic sectional views of steps of a method for producing an optoelectronic component according to an exemplary embodiment . Figures 6 to 10 show schematic sectional views of steps of a method for producing an optoelectronic component according to an exemplary embodiment .

[0056] Figures 11 and 12 each show a schematic sectional view of an optoelectronic component according to an exemplary embodiment .

[0057] In the exemplary embodiments and figures , similar or similarly acting constituent parts are provided with the same reference signs . The elements illustrated in the figures and their si ze relationships among one another should not be regarded as true to scale . Rather, individual elements may be represented with an exaggerated si ze for the sake of better representability and / or for the sake of better understanding .

[0058] In an exemplary embodiment of a method for producing an optoelectronic component 1 , a carrier 2 is provided as shown in figure 1 . The carrier 2 presently comprises a base body 22 and a conductor track 23 . The base body 22 comprises or consists of PET , the conductor track 23 comprises or consists of Cu . The base body 22 comprises a thickness of about 100 micrometers . The conductor track 23 is arranged in direct mechanical contact with the base body 22 . The carrier 2 further comprises contacting regions 21 for electrically contacting an electronic device such as an optoelectronic semiconductor chip 4 . Presently, the contacting regions 21 are formed with a part of the conductor track 23 .

[0059] A flux composition 3 is applied on the contacting regions 21 as shown in figure 2 . The flux composition 3 can be applied using screen printing, stencil printing, dispensing, j etting or laser induced forward trans fer . Presently, the flux composition 3 is applied by screen printing . As shown in figure 2 , the flux composition 3 is mainly arranged on the contacting regions 21 . Between the contacting regions 21 , the base body 22 is completely covered with the flux composition 3 . At least a part of the carrier 2 remains however free of the flux composition 3 .

[0060] The flux composition 3 comprises a flux material 31 and coloring particles 32 . The coloring particles 32 are distributed in the flux material 31 . The flux material 31 contains , for example , an acid . Presently, the flux material 31 comprises tacky properties . The coloring particles 32 comprise or consist of carbon black . Less than 10 wt% of the coloring particles 32 are present in the flux composition 3 . This ensures that no short circuit between the contacting regions occurs .

[0061] In a further method step, an optoelectronic semiconductor chip 4 is provided . The optoelectronic semiconductor chip 4 is configured to emit electromagnetic radiation in the visible range . In particular, the optoelectronic semiconductor chip 4 is a mini-LED or micro-LED . Presently, the optoelectronic semiconductor chip 4 comprises two contact pads 41 through which the optoelectronic semiconductor chip 4 can be supplied with a current . A solder material 5 is arranged on the contact pads 41 . The solder material 5 comprises , for example , Sn .

[0062] As shown in figure 3 , the optoelectronic semiconductor chip 4 is arranged on the flux composition 3 in such a way that the contact pads 41 are arranged on the contacting regions 21 of the carrier 2 . In other words , the contact pads 41 cover the part of the conductor track 23 which forms at least a part of the contacting regions 21 . The optoelectronic semiconductor chip 4 is applied to the flux composition 3 by laser induced forward trans fer or a pick and place process . In this step, the flux composition 3 as the tacky properties of the flux material 31 advantageously improves the adhesion of the optoelectronic semiconductor chip 4 to the carrier 2 during laser induced forward trans fer .

[0063] In a subsequent step of the method shown in figure 4 , the optoelectronic semiconductor chip 4 is fixed to the contacting regions 21 via the solder material 5 . This is achieved by irradiating the optoelectronic semiconductor chip 4 with pulsed electromagnetic radiation 6 . In this way, the optoelectronic semiconductor chip 4 and the solder material 5 applied thereon are heated . The solder material 5 partially melts and a mechanical and electrical connection to the contacting region 21 is established . A mask 11 is used to selectively irradiate the optoelectronic semiconductor chip 4 with the pulsed electromagnetic radiation 6 . Thus , a damage of the carrier 2 is prevented . The pulsed electromagnetic radiation 6 is , for example , provided by a Xe flash lamp . Alternatively, the optoelectronic semiconductor chip 4 can be selectively irradiated and thus heated with a laser .

[0064] The coloring particles 32 absorb the pulsed electromagnetic radiation 6 and trans fer the absorbed energy to the solder material 5 . Thus , the coloring particles 32 improve a coupling of a radiant power of the pulsed electromagnetic radiation 6 to the solder material 5 . Therefore , a radiation power of the pulsed electromagnetic radiation 6 can be reduced and a thermal load on the carrier 2 decreases . After the solder material 5 is cooled down such that it solidi fies , the optoelectronic component 1 shown in figure 5 is obtained . The optoelectronic component 1 comprises the carrier 2 with the contacting regions 21 , the optoelectronic component 4 , and the flux composition 3 . The optoelectronic semiconductor chip 4 is in mechanical and electrical contact with the conductor track 23 of the carrier 2 via the solder material 5 . The flux composition 3 is applied to the carrier 2 in the region of the contacting regions 21 . Presently, the flux composition 3 is arranged on a part of the conductor track 23 and on a part of the base body 21 . The flux composition is also arranged between the optoelectronic semiconductor chip 4 and the carrier 2 in a region between the contact pads 41 .

[0065] In figures 6 to 10 another exemplary embodiment of the method for producing an optoelectronic component 1 is shown . As already described in combination with figure 1 , a carrier 2 comprising contacting regions 21 is provided ( figure 6 ) .

[0066] Then a flux composition 3 is applied on the contacting regions 21 as shown in figure 7 . However, in contrast to figure 2 , the flux composition 3 additionally comprises a solder material 5 . Furthermore , the base body 22 is partially free of the flux composition 3 in a region between the contacting regions 21 . In other words , between the contacting regions 21 , the base body 22 is only partially covered with the flux composition 3 .

[0067] In the next step shown in figure 8 , an optoelectronic semiconductor chip 4 is arranged on the contacting regions 21 . However, in contrast to the optoelectronic semiconductor chip 4 of figure 8 , the present optoelectronic semiconductor chip 4 has no solder material 5 arranged on its contact pads 41 . Like described in combination with figure 3 , the optoelectronic semiconductor chip 4 is applied using laser induced forward trans fer . The flux composition 3 acts as tacky material during the laser induced forward trans fer to capture the optoelectronic semiconductor chip 4 .

[0068] A mask 11 is applied above the carrier 2 with the optoelectronic semiconductor chip 4 , as shown in figure 9 . Through the mask 11 , the optoelectronic semiconductor chip 9 is irradiated with pulsed electromagnetic radiation 6 , for example provided by a Xe flash lamp . The pulsed electromagnetic radiation 6 heats the solder material 5 dispersed in the flux composition 3 such that it is at least partially melted . In this way, a mechanical and electrical connection between the optoelectronic semiconductor chip 41 and the contacting regions 21 is established . Presently, the contact pads 41 of the optoelectronic semiconductor chip 4 are bonded to the conductor track 23 of the carrier 2 .

[0069] The coloring particles 32 presently comprise or consist of carbon black . Carbon black has a suf ficient electrical and thermal conductivity . Thus , it is able to trans fer the radiant power of the pulsed electromagnetic radiation 6 into the solder material 5 . Furthermore , it does not disturb the electrical contact between the optoelectronic semiconductor chip 4 and the contacting regions 21 .

[0070] The finished optoelectronic component 1 produced is shown in figure 10 . In contrast to the optoelectronic component 1 shown in figure 5 , the flux composition 3 is only partially arranged between the optoelectronic semiconductor chip 4 and the carrier 2 . In particular, between the optoelectronic semiconductor chip 4 and the carrier 2 , the base body 22 is only partially covered with the flux composition 3 . In this way, a short circuit is prevented .

[0071] An exemplary embodiment of an optoelectronic component 1 is shown in figure 11 . The optoelectronic component 1 comprises a carrier 2 with contacting regions 21 . Presently, the carrier 2 further comprises a base body 22 and a conductor track 23 . The contacting regions 21 are formed with a part of the conductor track 23 . The base body 22 comprises or consists of PET , the conductor track 23 comprises or consists of Cu . The carrier 2 is transparent for electromagnetic radiation in the visible range .

[0072] An optoelectronic semiconductor chip 4 is arranged on the carrier 2 . Presently, the optoelectronic semiconductor chip 4 is a flip-chip, in particular a micro-LED or mini-LED flipchip . The optoelectronic semiconductor chip 4 comprises a semiconductor layer sequence 42 and contact pads 41 . The semiconductor layer sequence 42 is configured to generate and emit electromagnetic radiation 43 in the visible range . The optoelectronic semiconductor chip 4 is electrically and mechanically connected to the carrier 2 via a solder material 5 . In particular, the optoelectronic semiconductor chip 4 is electrically conductively connected to the contacting regions 21 via the solder material 5 . Presently, the contact pads 41 are bonded by the solder material 5 to the part of the conductor track 23 forming the contacting regions 21 .

[0073] In the region of the contacting regions 21 a flux composition 3 is arranged . Presently, the flux composition 3 comprises a flux material 31 and di f fusely reflective coloring particles 32 . In particular, the coloring particles are white . For example , the coloring particles 32 comprise or consist of TiCy . The coloring particles 32 are presently di f fusely reflective for the electromagnetic radiation 43 emitted by the optoelectronic semiconductor chip 4 . Thus , an emission of the electromagnetic radiation 43 through the carrier 2 is prevented . Furthermore , an emission of the electromagnetic radiation 43 away from the carrier 2 is increased by the di f fusely reflectivity of the coloring particles .

[0074] A protective layer 8 encapsulates the optoelectronic semiconductor chip 4 . In other words , the optoelectronic semiconductor chip 4 is at least partially embedded in the protective layer 8 . The protective layer 8 comprises or consists of silicone or polyvinyl butyral . The protective layer 8 is designed to protect the optoelectronic semiconductor chip 5 from environmental influences such as humidity . Additionally, the optoelectronic semiconductor chip 5 is mechanically stabili zed by the protective layer 8 . On a side of the protective layer facing away from the carrier 2 , a cover 7 is arranged . The cover 7 comprises or consists of glass or poly (methyl methacrylate ) . The protective layer 8 and the cover 7 are in direct mechanical contact . The protective layer 8 can act as an adhesive for the cover 7 . Both the protective layer 8 and the cover 7 are transparent for the electromagnetic radiation 43 emitted by the optoelectronic semiconductor chip 4 .

[0075] The optoelectronic component 1 further comprises a substrate 9 and an adhesive layer 10 . The substrate 9 comprises or consists of glass or poly (methyl methacrylate ) . In particular, the substrate 9 comprises or consists of the same material as the cover 7 . However, it is also possible that the cover 7 and the substrate 9 comprise or consist of di f ferent materials . The substrate 9 is adhered to a side of the carrier 2 facing away from the optoelectronic semiconductor chip 4 by the adhesive layer 10 . The adhesive layer 10 comprises or consists of silicone or polyvinyl butyral . The adhesive layer 10 can comprise or consist of the same or a di f ferent material compared to the protective layer 8 . Both, the substrate 9 and the adhesive layer 10 are transparent for electromagnetic radiation in the visible range . In this way, it is possible that the optoelectronic component 1 is transparent . The substrate 9 increases a mechanical stability of the optoelectronic component 1 .

[0076] Figure 12 also shows an optoelectronic component 1 according to an exemplary embodiment . In contrast to the optoelectronic component 1 of figure 11 , the flux composition 3 comprises black coloring particles 32 . Such coloring particles 32 absorb the electromagnetic radiation 43 emitted by the optoelectronic semiconductor chip 4 . In this way, also an emission through the carrier 2 is prevented .

[0077] The features and exemplary embodiments described in connection with the figures can be combined with each other according to further exemplary embodiments , even i f not all combinations are explicitly described . Furthermore , the exemplary embodiments described in connection with the figures may have alternative or additional features as described in the general part .

[0078] This patent application claims the priority of German patent application 10 2023 134 601 . 6 , the disclosure content of which is hereby incorporated by reference . The invention is not restricted to the exemplary embodiments by the description on the basis of said exemplary embodiments . Rather, the invention encompasses any new feature and also any combination of features , which in particular comprises any combination of features in the patent claims and any combination of features in the exemplary embodiments , even i f this feature or this combination itsel f is not explicitly speci fied in the patent claims or exemplary embodiments .

[0079] References

[0080] 1 optoelectronic component

[0081] 2 carrier

[0082] 21 contacting region

[0083] 22 base body

[0084] 23 conductor track

[0085] 3 flux composition

[0086] 31 flux material

[0087] 32 coloring particle

[0088] 4 optoelectronic semiconductor chip

[0089] 41 contact pad

[0090] 42 semiconductor layer sequence

[0091] 43 electromagnetic radiation

[0092] 5 solder material

[0093] 6 electromagnetic radiation

[0094] 7 cover

[0095] 8 protective layer

[0096] 9 substrate

[0097] 10 adhesive layer

[0098] 11 mask

Claims

Claims1. Method for producing an optoelectronic component (1) comprising :- providing a carrier (2) with contacting regions (21) ,- applying a flux composition (3) on the contacting regions (21) , wherein the flux composition (3) comprises a flux material (31) and coloring particles (32) ,- arranging an optoelectronic semiconductor chip (4) on the flux composition (3) , and- fixing the optoelectronic semiconductor chip (4) to the contacting regions (21) via a solder material (5) , wherein- the optoelectronic component (1) produced is transparent for electromagnetic radiation in the visible range.

2. Method according to the previous claim, wherein fixing the optoelectronic semiconductor chip (4) to the contacting regions (21) is performed using electromagnetic radiation ( 6 ) .

3. Method according to the previous claim, wherein the coloring particles (32) absorb the electromagnetic radiation (6) used during fixing the optoelectronic semiconductor chip (4) to the contacting regions (21) .

4. Method according any of the previous claims, wherein the coloring particles (32) are diffusively reflective for electromagnetic radiation (43) emitted by the optoelectronic semiconductor chip (4) .

5. Method according to any of the previous claims, wherein the flux composition (3) has a higher thermal and / or electrical conductivity than the flux material (31) alone.

6. Method according to any of the previous claims, wherein the flux composition (3) comprises at most 10 wt% of the coloring particles (32) .

7. Method according to any of the previous claims, wherein applying the flux composition (3) is performed by screen printing, stencil printing, dispensing, jetting, laser induced forward transfer, spin coating, or slit coating.

8. Method according to any of the previous claims, wherein the flux composition (3) is removed at least partially after fixing the optoelectronic semiconductor chip (4) to the contacting regions (21) .

9. Method according to any of the previous claims, wherein the optoelectronic semiconductor chip (4) is provided with the solder material (5) before arranging on the flux composition (3) .

10. Method according to any of claims 1 to 8, wherein the flux composition (3) further comprises the solder material (5) .

11. Optoelectronic component (1) comprising- a carrier (2) with contacting regions (21) ,- an optoelectronic semiconductor chip (4) , and- a flux composition (3) comprising a flux material (31) and coloring particles (32) , wherein- the optoelectronic semiconductor chip (4) is electrically conductively connected to the contacting regions (21) via a solder material (5) ,- the flux composition (3) is arranged in the region of the contacting regions (21) , and- the optoelectronic component (1) is transparent for electromagnetic radiation in the visible range.

12. Optoelectronic component (1) according to claim 11, wherein the optoelectronic semiconductor chip (4) is a flipchip .

13. Optoelectronic component (1) according to any of claims 11 to 12, wherein the optoelectronic semiconductor chip (4) comprises or consists of a micro-LED.

14. Optoelectronic component (1) according to any of claims 11 to 13, wherein- the carrier (2) comprises a transparent base body (22) and a conductor track (23) , and- the conductor track (22) comprises the contacting regions (21) .

15. Optoelectronic component (1) according to any of claims 11 to 14, wherein the flux composition (3) is arranged between the optoelectronic semiconductor chip (4) and the carrier (2) .

16. Optoelectronic component (1) according to any of claims 11 to 15, further comprising- a cover ( 7 ) , and- a protective layer (8) , wherein- the protective layer (8) encapsulates the optoelectronic semiconductor chip (4) , and- the cover (7) is arranged on the protective layer (8) .

17. Optoelectronic component (1) according to any of claims11 to 16, further comprising- a substrate (9) , and - an adhesive layer (10) , wherein- the adhesive layer (10) adheres the substrate (9) to a side of the carrier (2) facing away from the optoelectronic semiconductor chip (4) .

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