Device for manufacturing semiconductor device and method for manufacturing semiconductor device

Abstract

This device (10) for manufacturing a semiconductor device comprises a stage (32) on which a substrate (110) is placed, a bonding head (40) for bonding a chip (100) to the substrate (110), and a controller (70). The bonding head (40) includes: a bonding tool (42) for holding the chip (100) in a non-contact manner; a suction source (64) for applying a negative pressure to a holding surface (48) of the bonding tool (42) to suction the chip (100); and a vibration source (60) for applying ultrasonic vibration to the holding surface (48) and restricting the movement of the chip (100) with respect to the holding surface (48). The controller (70) is configured to ground the chip (100) in a state in which the chip (100) is separated from the holding surface (48).

Description

Semiconductor device manufacturing apparatus and semiconductor device manufacturing method

[0001] The present specification discloses a manufacturing apparatus for manufacturing a semiconductor device by bonding a chip to a substrate, and a method for manufacturing a semiconductor device.

[0002] In recent years, in order to realize further miniaturization and higher density of semiconductor devices, techniques for holding semiconductor chips without contact have been proposed. For example, Patent Document 1 discloses a chip holder that holds semiconductor chips without contact by utilizing the ultrasonic squeeze effect.

[0003] In Patent Document 1, the above-mentioned chip holder is used as a pickup collet, which effectively prevents contamination and damage to the chip when it is picked up.

[0004] Japanese Patent Application Laid-Open No. 2023-045216

[0005] Typically, the chip picked up by the pickup collet is transferred to a bonding tool, which then presses the chip received from the pickup collet against a substrate and bonds it.

[0006] Patent Document 1 does not fully consider applying the above-mentioned chip holder technology to a bonding tool. Therefore, this specification discloses a semiconductor device manufacturing apparatus having a bonding tool that holds a chip in a non-contact manner, and a semiconductor device manufacturing method.

[0007] The semiconductor device manufacturing apparatus disclosed in this specification comprises a stage on which a substrate is placed, a bonding head for bonding a chip to the substrate, and a controller, wherein the bonding head comprises a bonding tool for holding the chip without contact, a suction source for applying negative pressure to a holding surface of the bonding tool to suck in the chip, and a vibration source for applying ultrasonic vibration to the holding surface to regulate movement of the chip relative to the holding surface, and the controller is configured to ground the chip while separating the chip from the holding surface.

[0008] In this case, the device may further include a pressure sensor that detects the pressure in the suction path as a suction pressure, and the controller may detect the grounding of the tip based on a change in the suction pressure.

[0009] The controller may also stop suction by the suction source at the timing when the contact with the ground is detected.

[0010] The controller may also be configured to alternatively select a first mode and a second mode, and in the first mode, the controller may be configured to ground the chip while the chip is spaced apart from the holding surface, and in the second mode, to horizontally move the chip together with the bonding tool while the chip is spaced apart from the holding surface, and to ground the chip by lowering the chip together with the bonding tool while the chip is in contact with the holding surface.

[0011] Furthermore, the bonding tool may further include a pickup collet that picks up the chip from a chip supply source, and the bonding tool may receive the chip from the pickup collet in a non-contact manner.

[0012] In this case, the pickup collet may hold the tip in a non-contact manner.

[0013] The outer size of the holding surface may be larger than the outer size of the chip, and the holding surface may be formed with a positioning recess having a shape that follows at least a part of the outer shape of the chip.

[0014] The present specification discloses a method for manufacturing a semiconductor device, characterized in that while a bonding tool holds a chip in a non-contact state, the chip is moved together with the bonding tool, and the chip is bonded to a substrate placed on a stage; while the bonding tool holds the chip in a non-contact state, negative pressure is applied to a holding surface of the bonding tool, and ultrasonic vibrations are applied to the holding surface to form a squeeze film between the holding surface and the chip; and while the chip is separated from the holding surface, the chip is grounded.

[0015] According to the technology disclosed in this specification, the chip is grounded while being separated from the holding surface, so that the load on the chip can be reduced and damage to the chip can be effectively prevented.

[0016] It is a schematic diagram showing the configuration of a manufacturing apparatus. It is a schematic diagram showing the configuration of a bonding head. It is a bottom view of a bonding tool. It is an image diagram showing the function of a positioning recess. It is an image diagram showing the function of an airflow forming groove. It is a schematic diagram showing the state of a first mode. It is a schematic diagram showing the state of a second mode.

[0017] The configuration of a semiconductor device manufacturing apparatus 10 will be described below with reference to the drawings. Fig. 1 is a schematic diagram showing the configuration of the manufacturing apparatus 10. Fig. 2 is a schematic diagram showing the configuration of a bonding head 40, and Fig. 3 is a bottom view of a bonding tool 42.

[0018] The manufacturing apparatus 10 is an apparatus that manufactures a semiconductor device by bonding one or more semiconductor chips 100 to a substrate 110. The manufacturing apparatus 10 has a chip supply source 12, a pickup unit 14, and a bonding unit 30. The chip supply source 12 is provided with semiconductor chips 100 attached to a dicing tape 16. The pickup unit 14 has push-up pins 20 that push up the semiconductor chips 100 attached to the dicing tape 16 from below, and a pickup collet 18 that picks up the pushed-up semiconductor chips 100.

[0019] The semiconductor chip 100 is attached to the dicing tape 16 with the surface to be bonded to the substrate 110, i.e., the bonding surface (shown by the bold line in FIG. 1), facing upward. The pickup collet 18 holds this bonding surface. When the pickup collet 18 receives the semiconductor chip 100 from the dicing tape 16, it rotates 180 degrees around a specified rotation axis. This changes the bonding surface from facing downward to facing upward.

[0020] The bonding section 30 has a stage 32 on which the substrate 110 is placed, and a bonding head 40 that holds and transports the semiconductor chip 100. As shown in Figure 2, the bonding head 40 has a bonding tool 42, a vibration source 60, and a suction source 64.

[0021] The bonding tool 42 holds and transports the semiconductor chip 100. The bonding tool 42 is movable in the horizontal and vertical directions by a movement mechanism (not shown). A holding plate 46 is provided at the end of the bonding tool 42. The bottom surface of the holding plate 46 functions as a holding surface 48 that holds the semiconductor chip 100.

[0022] As shown in FIG. 3 , the holding surface 48 is formed with suction holes 50, airflow forming grooves 54, and positioning recesses 56. In FIG. 3 , diagonally hatched areas indicate recesses that do not penetrate the holding plate 46, and cross-hatched areas indicate holes that penetrate the holding plate 46. The suction holes 50 are fluidly connected to a suction source 64 (described below). The suction source 64 applies negative pressure to the suction holes 50. The airflow forming grooves 54 are connected to the suction holes 50. In FIG. 3 , the airflow forming grooves 54 include four radial lines radiating from the suction holes 50 and a rectangular line surrounding the four radial lines. However, the shape of the airflow forming grooves 54 may be modified as appropriate, as long as they are connected to the suction holes 50. The positioning recesses 56 are independent of the airflow forming grooves 54 and are located outside the airflow forming grooves 54. The reasons for providing the airflow forming grooves 54 and the positioning recesses 56 will be described later.

[0023] The vibration source 60 applies ultrasonic vibrations to the holding surface 48. As shown in FIG. 2 , the vibration source 60 includes an ultrasonic vibration element 62 and an AC power supply 63. The ultrasonic vibration element 62 generates longitudinal vibrations upon receiving a drive signal, which is a voltage signal. The ultrasonic vibration element 62 includes, for example, lead zirconate titanate (commonly known as PZT) that vibrates upon receiving an AC voltage. The ultrasonic vibration element 62 is a bolt-tightened Langevin vibrator (commonly known as a BLT or BL vibrator) in which the PZT is sandwiched between metal blocks and tightened with screws (bolts). The AC power supply 63 applies an AC voltage of a frequency corresponding to a predetermined resonant frequency to the ultrasonic vibration element 62. Driving the vibration source 60 generates a squeeze film Sf between the holding surface 48 and the semiconductor chip 100, as will be described later.

[0024] The suction source 64 generates negative pressure and includes, for example, an air pump, etc. The suction source 64 is in communication with the suction path 52, and when the suction source 64 is driven, negative pressure acts on the suction holes 50, generating a suction force that attracts the semiconductor chip 100 to the holding surface 48.

[0025] The bonding section 30 is further provided with a positioning camera 68. The camera 68 captures an image of the bonding tool 42 holding the semiconductor chip 100 from below. Hereinafter, the image captured by the camera 68 will be referred to as an inspection image. A controller 70, which will be described later, analyzes the inspection image and calculates the position and angle of the semiconductor chip 100 relative to the bonding tool 42. The controller 70 then corrects the amount of movement of the bonding tool 42 based on the calculated position and angle.

[0026] The controller 70 controls the driving of the above-mentioned bonding head 40, etc. As shown in Fig. 1, the controller 70 is physically a computer having a processor 72 and a memory 74. Although Fig. 1 illustrates the controller 70 as a single computer, the controller 70 may be configured by combining multiple physically separated computers.

[0027] 1, the bonding tool 42 receives the semiconductor chip 100 from the pickup collet 18, which is in an upward position, and holds the surface of the semiconductor chip 100 opposite the bonding surface. The bonding tool 42 then moves to directly above the specified bonding position and descends toward the substrate 110. The bonding tool 42 then presses the semiconductor chip 100 against the substrate 110, bonding the semiconductor chip 100 to the substrate 110. A semiconductor device is manufactured by bonding the required number of semiconductor chips 100 to one substrate 110.

[0028] Here, the bonding method is not particularly limited, but in this example, the semiconductor chip 100 is directly bonded to the substrate 110. Direct bonding is a bonding method in which the semiconductor chip 100 is directly bonded to the substrate 110 without using an adhesive. For example, in direct bonding, chip-side electrodes formed on the bonding surface of the semiconductor chip 100 are bonded to substrate-side electrodes formed on the substrate 110. At this time, the electrodes may be welded using heat, or may be bonded at room temperature.

[0029] However, such direct bonding is susceptible to the influence of foreign matter or chips on the bonding surface, and even the slightest presence of foreign matter or chips can easily cause bonding defects. Therefore, the bonding tool 42 of this example uses the ultrasonic squeeze effect to hold the semiconductor chip 100 without contact. This will be explained in detail below.

[0030] When the semiconductor chip 100 is held by the bonding tool 42, the controller 70 drives the suction source 64 to apply negative pressure to the suction holes 50 and drives the vibration source 60 to apply ultrasonic vibration to the holding surface 48. When the semiconductor chip 100 is brought close to the holding surface 48 while the holding surface 48 is ultrasonically vibrating, an ultrasonic squeeze effect occurs between the holding surface 48 and the semiconductor chip 100. The ultrasonic squeeze effect occurs when one of two flat plates facing each other across a small gap is vibrated, causing a pressure higher than the external pressure to be generated within the gap due to the influence of viscosity within the gap. When this ultrasonic squeeze effect occurs, an ultrasonic squeeze film Sf is formed between the semiconductor chip 100 and the holding surface 48, preventing contact between the two, and a holding force is generated on the semiconductor chip 100 to keep it on the surface of the squeeze film Sf.

[0031] Here, the holding force generated by the ultrasonic squeeze effect (hereinafter referred to as "ultrasonic holding force") occurs in both a direction perpendicular to the holding surface 48 and a direction parallel to the holding surface 48 (i.e., the planar direction). That is, when the ultrasonic squeeze effect occurs, a force acts on the semiconductor chip 100 to keep it at a position a predetermined distance away from the holding surface 48, in other words, a force acts in a direction to float it up from the holding surface 48. Furthermore, when the ultrasonic squeeze effect occurs, the semiconductor chip 100 tends to stay within the vibration plane. Therefore, even if the semiconductor chip 100 is temporarily displaced in the planar direction due to an external force, the semiconductor chip 100 tends to move in the planar direction so that its entirety is positioned within the vibration plane, and return to a state facing the holding surface 48.

[0032] In this example, to assist this ultrasonic holding force, a suction force is also generated by negative pressure on the holding surface 48. The controller 70 controls the driving of the vibration source 60 and the suction source 64 so that the suction force, the ultrasonic holding force, and the gravity acting on the semiconductor chip 100 are balanced when the semiconductor chip 100 is floating above the holding surface 48.

[0033] As described above, when the ultrasonic squeeze effect occurs, the semiconductor chip 100 tends to be positioned within the vibration plane. Therefore, if the holding surface 48 is made to have substantially the same shape as the semiconductor chip 100, the ultrasonic squeeze effect causes the semiconductor chip 100 to automatically move in the planar direction so that the entire semiconductor chip 100 is positioned within the vibration plane (i.e., within the area inside the outer shape of the holding surface 48). In other words, self-alignment of the semiconductor chip 100 in the planar direction becomes possible.

[0034] However, the holding force in the plane direction due to this ultrasonic squeeze effect is not very large. Therefore, depending on the magnitude of gravity and inertial forces acting on the semiconductor chip 100, it may not be possible to position the semiconductor chip 100 in the plane direction with sufficient accuracy. Therefore, in this example, in order to further improve the positioning accuracy in the plane direction of the semiconductor chip 100, the holding surface 48 is made larger than the semiconductor chip 100, and an airflow forming groove 54 and a positioning recess 56 are formed on the holding surface 48. The groove 54 and the recess 56 will now be described.

[0035] 3, the holding surface 48 is formed with suction holes 50, airflow forming grooves 54, and positioning recesses 56. The positioning recesses 56 have substantially the same shape as the outer shape of the semiconductor chip 100. In this example, the semiconductor chip 100 is a square with sides of approximately L1, so the shape of the inner peripheral edge of the positioning recesses 56 is also a square with sides of approximately L1. At least a portion of the positioning recesses 56 is a recess that is sufficiently shallower than the thickness of the holding plate 46, and the remainder of the positioning recesses 56 is a hole that penetrates the holding plate 46 in the thickness direction.

[0036] The function of the positioning recess 56 will be described with reference to Fig. 4. Fig. 4 is an image diagram showing the function of the positioning recess 56. Note that the airflow forming groove 54 is not shown in Fig. 4. When the positioning recess 56 is formed, the positioning accuracy in the surface direction of the semiconductor chip 100 is improved compared to when the positioning recess 56 is not formed. It is presumed that the principle behind this function is that the amplitude of the ultrasonic vibration changes suddenly at the boundary of the positioning recess 56.

[0037] When the positioning recess 56 is formed, the strength of the holding surface 48 is locally reduced at the location where the positioning recess 56 is formed. When ultrasonic vibration is applied to the holding surface 48, the portion outside the positioning recess 56 tends to swing around the positioning recess 56 as a fulcrum. As a result, the vibration amplitude becomes suddenly larger in the outer portion than in the inner portion of the positioning recess 56, and the ultrasonic holding force changes suddenly at the boundary of the positioning recess 56.

[0038] 4, if one end of the semiconductor chip 100 in the planar direction is positioned beyond the positioning recess 56 and outward in the planar direction, the left-right balance of the ultrasonic holding force acting on the semiconductor chip 100 will be significantly disrupted. To eliminate this imbalance, the semiconductor chip 100 will automatically move toward the inside of the positioning recess 56. As a result, when the positioning recess 56 is present, the self-alignment accuracy of the semiconductor chip 100 can be improved compared to when the positioning recess 56 is not present.

[0039] Next, the air flow forming groove 54 will be described. As described above, a suction hole 50 is formed in the center of the holding surface 48, and this suction hole 50 is connected to the suction source 64. The function of this air flow forming groove 54 will be described with reference to Figure 5. Figure 5 is an image diagram showing the function of the air flow forming groove 54. Note that the positioning recess 56 is not shown in Figure 5.

[0040] When the air flow forming grooves 54 are formed, the positioning accuracy in the surface direction of the semiconductor chip 100 is improved compared to when the air flow forming grooves 54 are not formed. The principle behind this effect is presumably that the formation of the air flow forming grooves 54 increases the speed and stabilizes the air flow in the surface direction that flows between the semiconductor chip 100 and the holding surface 48.

[0041] That is, when the suction source 64 generates a suction force while the semiconductor chip 100 is levitated due to the ultrasonic squeeze effect, an airflow is generated in the gap between the semiconductor chip 100 and the holding surface 48 in the surface direction and toward the center. Here, without the airflow-forming grooves 54, the airflow in the surface direction toward the center tends to be slow and unstable due to the influence of fluid viscosity. Furthermore, the suction force acts locally only near the suction holes 50. In this case, even if the semiconductor chip 100 is misaligned in the surface direction, it is difficult for it to move in the surface direction, making it difficult for the misalignment to be corrected on its own.

[0042] On the other hand, as shown in FIG. 5 , when the airflow forming grooves 54 are formed, the gap between the semiconductor chip 100 and the holding surface 48 is thicker near the airflow forming grooves 54, reducing the influence of fluid viscosity acting on the entire airflow. As a result, the airflow speed in the planar direction increases, stabilizing the airflow in the planar direction. In particular, the airflow near the outer periphery of the semiconductor chip 100 (near area A in FIG. 5 ) is significantly more stable than when the airflow forming grooves 54 are not formed. Such a stable airflow in the planar direction applies a force to the semiconductor chip 100 that moves the center of the semiconductor chip 100 toward the suction holes 50 (and thus the center of the holding surface 48). This automatically positions the semiconductor chip 100 relative to the holding surface 48. Furthermore, by forming the airflow forming grooves 54, the suction force peaks generated near the suction holes 50 can be reduced, dispersing the suction force in the planar direction. This facilitates the semiconductor chip 100's movement in the planar direction and facilitates self-correction of misalignment in the planar direction.

[0043] As is clear from the above explanation, this example enables automatic positioning, or so-called self-alignment, of the semiconductor chip 100. This further improves the positioning accuracy when bonding the semiconductor chip 100 to the substrate 110.

[0044] In recent years, semiconductor devices have become increasingly miniaturized, requiring higher accuracy in positioning the semiconductor chip 100 relative to the substrate 110. Therefore, to meet the required positioning accuracy, the position and angle of the semiconductor chip 100 relative to the bonding tool 42 are detected, and the movement of the bonding tool 42 is corrected based on the detection results. By performing such position correction, the positioning accuracy of the semiconductor chip 100 relative to the substrate 110 can be improved to some extent. However, if the positional misalignment of the semiconductor chip 100 relative to the bonding tool 42 is large, it is difficult to quickly perform high-precision positioning correction of the bonding tool 42. For example, consider a case where a positioning accuracy of 0.1 μm is required, but a misalignment of 100 μm occurs in the initial stage. In this case, it is difficult to meet the required accuracy with a single correction. Typically, a low-precision position correction is performed first, followed by a high-precision position correction, which takes time to meet the required accuracy. On the other hand, if the initial misalignment is approximately 1 μm, high-precision position correction is possible from the beginning, allowing high accuracy to be achieved in a short processing time.

[0045] Therefore, when transferring the semiconductor chip 100 from the pickup collet 18 to the bonding tool 42, it is desirable that the semiconductor chip 100 be accurately positioned relative to the bonding tool 42. However, with conventional bonding tools 42, it has been difficult to receive the semiconductor chip 100 at the appropriate position and angle.

[0046] As described above, the bonding tool 42 of this example has a self-alignment function. Therefore, even if the semiconductor chip 100 is not properly positioned relative to the holding surface 48 immediately after receiving the chip, the self-alignment function described above automatically moves the semiconductor chip 100 to the ideal position. As a result, the amount of misalignment of the semiconductor chip 100 relative to the bonding tool 42, and therefore the amount of correction required for movement of the bonding tool 42, can be kept small. Furthermore, the small amount of correction allows for more precise positioning in a shorter time.

[0047] Next, the bonding process using the bonding tool 42 will be described. The bonding tool 42, while holding the semiconductor chip 100, descends toward the substrate 110 and bonds the semiconductor chip 100 to the substrate 110. In this example, a first mode and a second mode can be selected as the descending operation mode of the bonding tool 42. Fig. 6 is a schematic diagram showing the first mode, and Fig. 7 is a schematic diagram showing the second mode.

[0048] 6 , when the first mode is selected, the controller 70 grounds the semiconductor chip 100 to the substrate 110 while keeping the semiconductor chip 100 spaced apart from the holding surface 48. Thereafter, the bonding tool 42 is lowered until the holding surface 48 comes into contact with the semiconductor chip 100, and the semiconductor chip 100 is pressed by the bonding tool 42.

[0049] In this way, by grounding the semiconductor chip 100 while keeping it separated from the holding surface 48, the stress acting on the semiconductor chip 100 in the process up until the start of pressing can be reduced to almost zero. As a result, chipping and deformation of the semiconductor chip 100 can be effectively prevented.

[0050] In the first mode, the grounding of the semiconductor chip 100 may be detected by a change in the back pressure of the suction path 52. That is, when the semiconductor chip 100 is grounded, the gap between the semiconductor chip 100 and the holding surface 48 narrows, albeit slightly. This narrowing of the gap reduces the pressure in the suction path 52. Therefore, a pressure sensor 65 (see FIG. 2) may be provided to detect the pressure in the suction path 52, and the timing of a sudden change in pressure may be identified as the timing of the grounding.

[0051] After detecting the ground contact, the controller 70 may continue applying ultrasonic vibrations to the holding surface 48. When the ultrasonic vibrations are continued, the squeeze film Sf between the holding surface 48 and the semiconductor chip 100 functions as a damper. This reduces the impact when the holding surface 48 contacts the semiconductor chip 100, effectively preventing damage to the semiconductor chip 100. Furthermore, when the ground contact is detected, the controller 70 may stop the application of negative pressure to the suction holes 50 by the suction source 64. This configuration effectively prevents the semiconductor chip 100, once grounded to the substrate 110, from floating up due to the suction force and colliding with the holding surface 48.

[0052] Next, the second mode will be described. As shown in Fig. 7 , when the second mode is selected, the controller 70 stops the vibration source 60 and brings the semiconductor chip 100 into contact with the holding surface 48 before grounding the semiconductor chip 100. Then, with the semiconductor chip 100 in contact with the holding surface 48, the controller 70 grounds the semiconductor chip 100 to the substrate 110. In this case, the controller 70 detects the grounding of the semiconductor chip 100 based on the reaction force acting on the bonding tool 42. After the grounding is detected, the controller 70 presses the semiconductor chip 100 with the bonding tool 42.

[0053] 7, the second mode is effective when the semiconductor chip 100 is warped. The warped semiconductor chip 100 is brought into contact with the holding surface 48 prior to grounding, thereby correcting the warp. Then, the semiconductor chip 100 becomes flat, allowing the semiconductor chip 100 to be properly grounded to the substrate 110.

[0054] The first mode and the second mode may be selected by a user. Alternatively, the controller 70 may alternatively select either the first mode or the second mode depending on the state of the semiconductor chip 100. For example, the manufacturing apparatus 10 may be provided with an inspection device 66 that detects the state (e.g., the amount of bending, etc.) of the semiconductor chip 100 held by the bonding tool 42, and the first mode, the second mode, etc. may be switched depending on the detection result. The inspection device 66 may include, for example, one or more cameras that capture images of the semiconductor chip 100, and may detect the state of the semiconductor chip 100 based on the captured images. Alternatively, the inspection device 66 may include a shape sensor that uses a laser or infrared light.

[0055] Furthermore, all of the configurations described above are merely examples, and other configurations may be modified as appropriate as long as the configuration described in claim 1 is included. For example, the airflow forming groove 54 may have another shape as long as it is connected to the suction hole 50. The airflow forming groove 54 may also be omitted. Furthermore, not only the bonding tool 42 but also the pickup collet 18 may hold the semiconductor chip 100 in a non-contact manner. That is, the pickup collet 18, like the bonding head 40, may have a vibration source that applies ultrasonic vibrations to the end surface of the pickup collet 18 and a suction source that applies negative pressure to the end surface. This configuration more effectively prevents contamination and damage to the semiconductor chip 100.

[0056] 10 Manufacturing apparatus, 12 Chip supply source, 14 Pickup unit, 16 Dicing tape, 18 Pickup collet, 20 Push-up pin, 30 Bonding unit, 32 Stage, 40 Bonding head, 42 Bonding tool, 46 Holding plate, 48 Holding surface, 50 Suction hole, 52 Suction path, 54 Air flow forming groove, 56 Positioning recess, 60 Vibration source, 62 Ultrasonic vibration element, 63 AC power supply, 64 Suction source, 65 Pressure sensor, 66 Inspection device, 68 Camera, 70 Controller, 72 Processor, 74 Memory, 100 Semiconductor chip, 110 Substrate.

Claims

1. An apparatus for manufacturing a semiconductor device comprising: a stage on which a substrate is placed; a bonding head for bonding a chip to the substrate; and a controller, wherein the bonding head comprises: a bonding tool for holding the chip without contact; a suction source for applying negative pressure to a holding surface of the bonding tool to suck in the chip; and a vibration source for applying ultrasonic vibrations to the holding surface to regulate movement of the chip relative to the holding surface, and the controller is configured to ground the chip while separating it from the holding surface.

2. An apparatus for manufacturing a semiconductor device as claimed in claim 1, further comprising a pressure sensor for detecting the pressure in the suction path as a suction pressure, and the controller detects the grounding of the chip based on a change in the suction pressure.

3. An apparatus for manufacturing a semiconductor device according to claim 1 or 2, characterized in that the controller stops suction by the suction source when the controller detects the grounding.

4. An apparatus for manufacturing a semiconductor device as described in claim 1, wherein the controller is configured to alternatively select a first mode and a second mode, and the controller is configured to: in the first mode, ground the chip while the chip is spaced from the holding surface; and in the second mode, horizontally move the chip together with the bonding tool while the chip is spaced from the holding surface, and lower the chip together with the bonding tool while the chip is in contact with the holding surface, thereby grounding the chip.

5. The semiconductor device manufacturing apparatus according to claim 1, further comprising a pickup collet for picking up the chip from a chip supply source, and the bonding tool receives the chip from the pickup collet in a non-contact manner.

6. An apparatus for manufacturing a semiconductor device according to claim 5, characterized in that said pickup collet holds said chip in a non-contact manner.

7. An apparatus for manufacturing a semiconductor device as claimed in claim 1, characterized in that the outer size of the holding surface is larger than the outer size of the chip, and the holding surface is formed with a positioning recess having a shape that follows at least a part of the outer shape of the chip.

8. A method for manufacturing a semiconductor device, comprising the steps of: moving the chip together with the bonding tool while the bonding tool holds the chip in a non-contact state, and bonding the chip to a substrate placed on a stage; while the bonding tool holds the chip in a non-contact state, applying a negative pressure to a holding surface of the bonding tool and applying ultrasonic vibration to the holding surface to form a squeeze film between the holding surface and the chip; and grounding the chip while the chip is separated from the holding surface.

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