Device and method for producing device

Abstract

This device includes a substrate, a capacitor, a first contact, a second contact, a first insulating member, and a second insulating member. The capacitor is disposed on the substrate. The capacitor is formed by laminating a plurality of multilayer films each comprising a first electrode film, an insulating film, and a second electrode film laminated in the stated order. The first contact and the second contact penetrate the capacitor in the thickness direction of the capacitor. The first insulating member is disposed between the first contact and the second electrode film. The second insulating member is disposed between the second contact and the first electrode film.

Description

Device and method for manufacturing the same

[0001] Various aspects and embodiments of the present disclosure relate to devices and methods for manufacturing devices.

[0002] In order to reduce power supply noise supplied to semiconductor circuits, it is necessary to place decoupling capacitors with larger capacitance closer to the circuits. Patent Document 1 listed below discloses a technique for manufacturing decoupling capacitors on package substrates using semiconductor processes. Large-capacity capacitors are also required for analog circuit formation.

[0003] Japanese Patent Application Laid-Open No. 2022-54402

[0004] The present disclosure provides devices having capacitors with high capacitance per unit area.

[0005] One aspect of the present disclosure provides a device including a substrate, a capacitor, a first contact, a second contact, a first insulating member, and a second insulating member. The capacitor is disposed on the substrate. The capacitor is formed by stacking multiple multilayer films, each of which has a first electrode film, an insulating film, and a second electrode film stacked in this order. The first contact and the second contact penetrate the capacitor in the thickness direction of the capacitor. The first insulating member is disposed between the first contact and the second electrode film. The second insulating member is disposed between the second contact and the first electrode film.

[0006] According to various aspects and embodiments of the present disclosure, a device having a capacitor with a large capacitance per unit area can be provided.

[0007] FIG. 1 is a cross-sectional view showing an example of a device structure according to an embodiment of the present disclosure. FIG. 2 is an enlarged cross-sectional view showing an example of a first contact and its vicinity. FIG. 3 is an enlarged cross-sectional view showing an example of a second contact and its vicinity. FIG. 4 is a flowchart showing an example of a device manufacturing method. FIG. 5 is a cross-sectional view showing an example of a device manufacturing process. FIG. 6 is a cross-sectional view showing an example of a device manufacturing process. FIG. 7 is a cross-sectional view showing an example of a device manufacturing process. FIG. 8 is a cross-sectional view showing an example of a device manufacturing process. FIG. 9 is a cross-sectional view showing an example of a device manufacturing process. FIG. 10 is a cross-sectional view showing an example of a device manufacturing process. FIG. 11 is a cross-sectional view showing an example of a device manufacturing process. FIG. 12 is a cross-sectional view showing an example of a device manufacturing process. FIG. 13 is a cross-sectional view showing an example of a device manufacturing process. FIG. 14 is a cross-sectional view showing an example of a device manufacturing process. FIG. 15 is a cross-sectional view showing another example of a device structure.

[0008] Hereinafter, embodiments of the disclosed device and device manufacturing method will be described in detail with reference to the drawings. Note that the disclosed device and device manufacturing method are not limited to the following embodiments.

[0009] One possible approach to increasing the capacitance of a metal-insulator-metal (MIM) capacitor is to stack multiple MIM capacitors vertically. To configure the opposing electrodes across the dielectric layer as cathode and anode, contact plugs that do not short-circuit each other must be connected to the anode and cathode. By forming one end of the MIM capacitor in a stepped configuration and providing vertical contact plugs connected to each electrode, the opposing electrodes can be configured as cathode and anode. However, if one end of the MIM capacitor is stepped, the surface area of ​​the dielectric layer is reduced by the amount of the step, resulting in a decrease in capacitance. Furthermore, as the number of layers in the MIM structure increases, the area of ​​the stepped portion increases, making it difficult to increase the capacitance per unit area of ​​the capacitor, including the area where the electrodes are located.

[0010] The present disclosure provides devices having capacitors with high capacitance per unit area.

[0011] 1 is a cross-sectional view showing an example of the structure of a device 10 according to an embodiment of the present disclosure. The device 10 according to this embodiment includes a substrate W, a capacitor 11 disposed on the substrate W, and a passivation layer 12 disposed on the capacitor 11. A portion of the capacitor 11 is formed on the substrate W so as to follow the shape of a recess 15 formed in the substrate W.

[0012] The capacitor 11 has a plurality of multilayer films 110 stacked with insulating films 111 (dielectrics) interposed therebetween. Each multilayer film 110 includes a first electrode film 1110, an insulating film 1111 (dielectric), and a second electrode film 1112. The first electrode film 1110, the insulating film 1111, and the second electrode film 1112 are stacked in this order from the bottom up. The first electrode film 1110 is formed of a metal such as titanium nitride, and the second electrode film 1112 is formed of a metal such as tungsten. The insulating films 111 and 1112 are formed of a dielectric such as hafnia, alumina, or zirconia.

[0013] Although the capacitor 11 provided in the device 10 illustrated in FIG. 1 is provided with two multilayer films 110, the disclosed technology is not limited to this, and the capacitor 11 may have more than 100 insulating films 111 and multilayer films 110 stacked alternately.

[0014] In this embodiment, the thickness of the first electrode film 1110 is preferably 1 nm or more and 100 nm or less. The thickness of the insulating film 1111 is preferably 1 nm or more and 100 nm or less. The thickness of the second electrode film 1112 is preferably 1 nm or more and 100 nm or less.

[0015] The capacitor 11 is provided with a first contact 13 and a second contact 14 that penetrate the capacitor 11 in the thickness direction of the capacitor 11. The first contact 13 and the second contact 14 are formed of a conductor such as titanium nitride, tungsten, or an impurity-doped semiconductor. A first insulating member 130 is disposed between the first contact 13 and the second electrode film 1112, as shown in FIG. 2, for example. The first contact 13 and the second electrode film 1112 are insulated by the first insulating member 130. The thickness d1 of the first insulating member 130 in the direction from the first contact 13 to the second electrode film 1112 is preferably, for example, 1 nm or more and 100 nm or less. This makes it possible to suppress a decrease in the capacitance of the capacitor 11 while maintaining insulation between the first contact 13 and the second electrode film 1112 and between the second contact 14 and the first electrode film 1110. The first contact 13 and the first electrode film 1110 are in contact with each other, and are electrically connected to each other.

[0016] 3, a second insulating member 140 is disposed between the second contact 14 and the first electrode film 1110. The second contact 14 and the first electrode film 1110 are insulated by the second insulating member 140. The thickness d2 of the second insulating member 140 in the direction from the second contact 14 to the first electrode film 1110 is preferably, for example, 1 nm or more and 100 nm or less. The second contact 14 and the second electrode film 1112 are in contact with each other, and are electrically connected to each other.

[0017] The first insulating member 130 and the second insulating member 140 are, for example, silicon oxide, silicon nitride, nitrogen-containing silicon oxide, carbon-containing silicon oxide, or carbon- and nitrogen-containing silicon oxide.

[0018] In the device 10 of this embodiment, even if the number of multilayer films 110 stacked in the thickness direction of the capacitor 11 via the insulating film 111 increases, there is no need to increase the area for arranging the first contacts 13 and the second contacts 14. Therefore, by increasing the number of multilayer films 110 stacked in the thickness direction of the capacitor 11, the capacitance per unit area of ​​the capacitor 11 can be increased.

[0019] [Method of Manufacturing Device 10] Fig. 4 is a flowchart showing an example of a method of manufacturing the device 10. Hereinafter, an example of a method of manufacturing the device 10 will be described with reference to Figs.

[0020] First, a substrate W, for example, as shown in Fig. 5, is prepared (step S100). The substrate W has a structure in which a silicon oxide film is formed on a silicon substrate, for example.

[0021] 6, for example, a recess 15 is formed in the substrate W (step S101). In step S101, the recess 15 is formed by lithography.

[0022] 7, for example, a first electrode film 1110 is formed on the substrate W along the recess 15 of the substrate W (step S102). If the substrate W is conductive, an insulating film is inserted between the substrate W and the first electrode film 1110 to insulate the first electrode film 1110 from the substrate W. The first electrode film 1110 is formed by, for example, ALD (Atomic Layer Deposition). If the first electrode film 1110 is titanium nitride, a titanium-containing gas such as TiCl4 is used as the source gas, and a nitrogen-containing gas such as NH3 is used as the modifying gas.

[0023] Next, an insulating film 1111 is formed on the first electrode film 1110 (step S103). The insulating film 1111 is formed by, for example, ALD. When the insulating film 1111 is made of hafnia, an organometallic material gas such as tetrakisethylmethylaminohafnium is used as the material gas, and an oxygen-containing gas such as ozone is used as the modifying gas.

[0024] Next, a second electrode film 1112 is formed on the insulating film 1111 (step S104). The second electrode film 1112 is formed, for example, by ALD. When the second electrode film 1112 is made of tungsten, a tungsten-containing gas such as WF6 is used as the source gas, and a gas such as silane gas or hydrogen gas is used as the reactive gas. As a result, a multilayer film 110 including the first electrode film 1110, the insulating film 1111, and the second electrode film 1112 is formed on the substrate W along the shape of the recess 15, as shown in FIG. 8, for example.

[0025] Next, the insulating film 111 is formed on the second electrode film 1112 (step S105). The insulating film 111 may be made of, for example, hafnia.

[0026] Next, a first electrode film 1110 is formed on the insulating film 111 (step S106), an insulating film 1111 is formed on the first electrode film 1110 (step S107), and a second electrode film 1112 is formed on the insulating film 1111 (step S108). Then, it is determined whether a predetermined number of films have been formed (step S109). When the device 10 illustrated in FIG. 1 is manufactured, in step S109, it is determined whether, for example, two first electrode films 1110, two insulating films 1111, two second electrode films 1112, and one insulating film 111 have been formed. If the predetermined number of films have not been formed (step S109: No), the process shown in step S105 is executed again.

[0027] On the other hand, if the predetermined number of films have been formed (S109: Yes), a passivation layer 12 is formed on the second electrode film 1112 (step S110). Steps S102 to S109 are an example of step (a). Step S110 is an example of step (g), and the passivation layer 12 is an example of a protective film. As a result, a capacitor 11 is formed on the substrate W, and a passivation layer 12 is formed on the capacitor 11, as shown in FIG. 9 , for example.

[0028] Next, as shown in FIG. 10 , for example, a first hole 131 and a second hole 141 are formed (step S111). Step S111 is an example of process (b). In step S111, the first hole 131 and the second hole 141 that penetrate the capacitor 11 in the thickness direction of the capacitor 11 are formed, for example, by anisotropic dry etching. Note that it is preferable that the bottoms of the first hole 131 and the second hole 141 remain within the first electrode film 1110 and do not reach the substrate W.

[0029] Next, the second electrode film 1112 exposed on the sidewall of the first hole 131 is etched to form a first recess 131a (step S112). Step S112 is an example of process (c). In step S112, as shown in FIG. 11 , for example, the second hole 141 is filled with a sacrificial film 142, and then the first hole 131 is exposed to an etching solution. This etches the second electrode film 1112 exposed on the sidewall of the first hole 131, and as shown in FIG. 11 , for example, a first recess 131a is formed on the sidewall of the first hole 131. The first recess 131a is recessed along the extension direction of the second electrode film 1112. The depth of the first recess 131a in the extension direction of the second electrode film 1112 is preferably, for example, 1 nm or more and 100 nm or less.

[0030] In step S112, a first etching solution is used that has a high etching selectivity of the second electrode film 1112 relative to the first electrode film 1110 (i.e., the etching amount of the second electrode film 1112 is greater than that of the first electrode film 1110). When the first electrode film 1110 is formed of, for example, titanium nitride and the second electrode film 1112 is formed of, for example, tungsten, an etching solution containing, for example, orthoperiodic acid and water can be used as the first etching solution. An etching solution containing orthoperiodic acid and water is disclosed, for example, in Japanese Patent Laid-Open No. 2005-166924, which shows that it can etch tungsten with a high etching selectivity relative to titanium nitride.

[0031] Next, the first electrode film 1110 exposed on the sidewall of the second hole 141 is etched to form a second recess 141a (step S113). Step S113 is an example of process (d). In step S113, after the sacrificial film 142 in the second hole 141 is removed, the first hole 131 is filled with the sacrificial film 132, and the inside of the second hole 141 is exposed to an etching solution, as shown in FIG. 12, for example. This etches the first electrode film 1110 exposed on the sidewall of the second hole 141, and a second recess 141a is formed on the sidewall of the second hole 141, as shown in FIG. 12, for example. The second recess 141a is recessed along the extension direction of the first electrode film 1110. The depth of the second recess 141a in the extension direction of the first electrode film 1110 is preferably 1 nm or more and 100 nm or less.

[0032] In step S113, a second etching solution is used that has a high etching selectivity for the first electrode film 1110 relative to the second electrode film 1112 (i.e., the etching amount of the first electrode film 1110 is greater than that of the second electrode film 1112). When the first electrode film 1110 is formed of, for example, titanium nitride and the second electrode film 1112 is formed of, for example, tungsten, the etching solution disclosed in Japanese Patent Application Laid-Open No. 2016-163044 can be used as the second etching solution. The etching solution described in Japanese Patent Application Laid-Open No. 2016-163044 is a liquid containing (A) 75 to 95 wt % of one or more selected from sulfuric acid and alkylsulfonic acid, (B) 0.3 to 10 wt % of peroxide, (C) 0.0001 to 3 wt % of inorganic ammonium salt, and (D) the balance water, and is shown to be capable of etching titanium nitride with a high etching selectivity relative to tungsten.

[0033] Next, an insulating member is buried in the first recess 131a and the second recess 141a (step S114). Step S114 is an example of process (e). In step S114, after the sacrificial film 132 in the first hole 131 is removed, an insulating member, which is a silicon-containing member, is buried in the first recess 131a and the second recess 141a by, for example, CVD. When the insulating member is silicon oxide, a silicon-containing gas such as TEOS (Tetraethoxysilan) is used as the source gas. As a result, an insulating member 16 is buried in the first recess 131a and the second recess 141a, as shown in FIG. 13, for example.

[0034] Next, excess insulating material in the first hole 131 and the second hole 141 is removed (step S115). In step S115, the insides of the first hole 131 and the second hole 141 are exposed to an etching solution that etches the silicon oxide insulating material 16, such as a third etching solution such as hydrofluoric acid. As a result, excess insulating material 16 formed on the sidewalls of the first hole 131 and the second hole 141 other than the first recess 131a and the second recess 141a is removed, exposing the first electrode film 1110 in the first hole 131 and the second electrode film 1112 in the second hole 141. Note that the etching performed in step S115 is not limited to wet etching, and may be dry etching that isotropically removes the silicon oxide film.

[0035] Next, a conductor such as a metal is embedded in the first hole 131 and the second hole 141 (step S116), thereby forming the device 10. Step S116 is an example of process (f). In step S116, the metal is embedded in the first hole 131 and the second hole 141, for example, by ALD. When the metal is titanium nitride, a titanium-containing gas such as TiCl4 is used as the source gas, and a nitrogen-containing gas such as NH3 is used as the modifying gas. As a result, the metal is embedded in the first hole 131 and the second hole 141, thereby forming the first contact 13 and the second contact 14, as shown in FIG. 14, for example. In the device 10 illustrated in FIG. 14, the first contact 13 and the first electrode film 1110 are electrically connected, and the first contact 13 and the second electrode film 1112 are insulated by the first insulating member 130 embedded in the first recess 131a. Furthermore, the second contact 14 and the second electrode film 1112 are electrically connected, and the second contact 14 and the first electrode film 1110 are insulated from each other by the second insulating member 140 embedded in the second recess 141 a. This completes the method for manufacturing the device 10 shown in this flowchart.

[0036] The above describes the embodiment. As described above, the device (device 10) in the embodiment includes a substrate (substrate W), a capacitor (capacitor 11), a first contact (first contact 13), a second contact (second contact 14), a first insulating member (first insulating member 130), and a second insulating member (second insulating member 140). The capacitor is disposed on the substrate and includes a plurality of multilayer films (multilayer films 110) stacked in this order, each of which includes a first electrode film (first electrode film 1110), an insulating film (insulating film 1111), and a second electrode film (second electrode film 1112). The first contact and the second contact penetrate the capacitor in the thickness direction of the capacitor. The first insulating member is disposed between the first contact and the second electrode film. The second insulating member is disposed between the second contact and the first electrode film. This allows the device 10 to be provided with a capacitor 11 having a large capacitance per unit area.

[0037] In the above embodiment, the substrate has a recess (recess 15). The first electrode film, the insulating film, and the second electrode film are arranged on the substrate in a shape that conforms to the recess. This allows the capacitance per unit area of ​​capacitor 11 to be further increased.

[0038] In the above-described embodiment, the thickness of the first insulating member in the direction from the first contact to the second electrode film and the thickness of the second insulating member in the direction from the second contact to the first electrode film are 1 nm or more and 100 nm or less, thereby making it possible to prevent a decrease in the capacitance of the capacitor 11 while maintaining insulation between the first contact and the second electrode film and between the second contact and the first electrode film.

[0039] In the above-described embodiment, the thickness of the first electrode film is 1 nm or more and 100 nm or less, the thickness of the second electrode film is 1 nm or more and 100 nm or less, and the thickness of the insulating film is 1 nm or more and 100 nm or less, thereby enabling the creation of a capacitor 11 with a large capacitance within the device 10.

[0040] In the above-described embodiment, the first electrode film is titanium nitride, the second electrode film is tungsten, and the insulating film is hafnia, alumina, or zirconia. This allows a capacitor 11 with a large capacitance to be formed within the device 10.

[0041] In the above-described embodiment, a protective film (passivation layer 12) is disposed on the capacitor, thereby protecting the capacitor 11 from members disposed on the capacitor 11.

[0042] The above-described embodiment is a device manufacturing method including steps (a) to (f). In step (a), a capacitor is formed on a substrate, with a plurality of multilayer films stacked thereon, each of which includes a first electrode film, an insulating film, and a second electrode film stacked in this order. In step (b), a first hole (first hole 131) and a second hole (second hole 141) are formed, penetrating the capacitor in the thickness direction of the capacitor. In step (c), a first recess (131a) recessed in the extension direction of the second electrode film is formed by etching the second electrode film exposed in the first hole. In step (d), a second recess (second recess 141a) recessed in the extension direction of the first electrode film is formed by etching the first electrode film exposed in the second hole. In step (e), an insulating member (insulating member 16) is embedded in the first recess and the second recess. In step (f), the first hole and the second hole are filled with a metal, thereby manufacturing a device 10 having a capacitor 11 with a large capacitance per unit area.

[0043] In the above embodiment, a recess is formed in the substrate, and in step (a), the first electrode film, the insulating film, and the second electrode film are formed along the shape of the recess, thereby further increasing the capacitance per unit area of ​​the capacitor 11.

[0044] In the above-described embodiment, the depth of the first recess in the extension direction of the second electrode film and the depth of the second recess in the extension direction of the first electrode film are 1 nm or more and 100 nm or less, thereby making it possible to prevent a decrease in the capacitance of the capacitor 11 while maintaining insulation between the first contact and the second electrode film and between the second contact and the first electrode film.

[0045] The method for manufacturing a device in the above-described embodiment further includes the step of (g) forming a protective film on the capacitor 11. This makes it possible to protect the capacitor 11 from components disposed on the capacitor 11.

[0046] [Others] The technology disclosed in the present application is not limited to the above-described embodiment, and various modifications are possible within the scope of the gist thereof.

[0047] For example, in the above-described embodiment, the capacitor 11 is formed along the shape of the recess 15 formed in the substrate W, but the disclosed technology is not limited to this. As another embodiment, for example, as shown in FIG. 15 , the capacitor 11 may be formed along the surface of a flat substrate W. Even in a device 10 configured in this manner, even if the number of multilayer films 110 stacked in the thickness direction of the capacitor 11 with the insulating film 111 interposed therebetween increases, there is no need to increase the area for arranging the first contact 13 and the second contact 14. Therefore, by increasing the number of multilayer films 110 stacked in the thickness direction of the capacitor 11, the capacitance per unit area of ​​the capacitor 11 can be increased.

[0048] In the above embodiment, the first electrode film 1110 and the second electrode film 1112 are made of titanium nitride and tungsten, respectively, but this is not limiting. If the first electrode film 1110 and the second electrode film 1112 are made of materials that can be etched at different selectivity ratios, a device can be formed using a method similar to the above embodiment. The materials do not have to be metals.

[0049] 1, the first contacts 13 and the second contacts 14 are arranged side by side in a direction parallel to the plane of the paper, but the disclosed technology is not limited to this. In another embodiment, the first contacts 13 and the second contacts 14 may be arranged side by side in a direction intersecting the plane of the paper (e.g., perpendicular to the plane of the paper). This allows the area of ​​the device 10, including the area in which the first contacts 13 and the second contacts 14 are arranged, to be reduced.

[0050] Furthermore, in the above-described embodiment, the capacitor 11 is formed to follow the shape of one recess 15 formed in the substrate W, but the disclosed technology is not limited to this. In another embodiment, the capacitor 11 may be formed to follow the shapes of multiple recesses 15 formed in the substrate W. This can further increase the capacitance per unit area of ​​the capacitor 11.

[0051] It should be noted that the disclosed embodiments are illustrative in all respects and should not be considered limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0052] Furthermore, the following supplementary notes are disclosed regarding the above-described embodiment.

[0053] (Supplementary Note 1) A device comprising: a substrate; a capacitor arranged on the substrate, the capacitor being formed by stacking a plurality of multilayer films, each of which has a first electrode film, an insulating film, and a second electrode film stacked in this order; a first contact and a second contact penetrating the capacitor in a thickness direction of the capacitor; a first insulating member arranged between the first contact and the second electrode film; and a second insulating member arranged between the second contact and the first electrode film. (Supplementary Note 2) The device according to Supplementary Note 1, wherein the first electrode film and the second electrode film are made of different materials. (Supplementary Note 3) The device according to Supplementary Note 1 or 2, wherein the first electrode film and the second electrode film are made of materials that can be etched at different selectivity ratios. (Supplementary Note 4) The device according to any one of Supplements 1 to 3, wherein the substrate has a recess, and the first electrode film, the insulating film, and the second electrode film are arranged on the substrate in shapes that follow the recess. (Supplementary Note 5) The device according to any one of Supplements 1 to 4, wherein the thickness of the first insulating member in the direction from the first contact to the second electrode film and the thickness of the second insulating member in the direction from the second contact to the first electrode film are 1 nm or more and 100 nm or less. (Supplementary Note 6) The device according to any one of Supplements 1 to 5, wherein the thickness of the first electrode film is 1 nm or more and 100 nm or less, the thickness of the second electrode film is 1 nm or more and 100 nm or less, and the thickness of the insulating film is 1 nm or more and 100 nm or less. (Supplementary Note 7) The device according to any one of Supplements 1 to 6, wherein the first electrode film is titanium nitride and the second electrode film is tungsten. (Supplementary Note 8) The device according to any one of Supplements 1 to 7, wherein the insulating film is hafnia, alumina, or zirconia. (Supplementary Note 9) The device according to any one of Supplements 1 to 8, wherein a protective film is disposed on the capacitor.(Supplementary Note 10) A method for manufacturing a device, comprising: (a) forming a capacitor on a substrate, the capacitor including a plurality of stacked multilayer films, each stacked in this order, of a first electrode film, an insulating film, and a second electrode film, (b) forming a first hole and a second hole penetrating the capacitor in a thickness direction of the capacitor, (c) etching the second electrode film exposed in the first hole to form a first recess along the extending direction of the second electrode film, (d) etching the first electrode film exposed in the second hole to form a second recess along the extending direction of the first electrode film, (e) filling the first recess and the second recess with an insulating member, and (f) filling the first hole and the second hole with a conductor. (Supplementary Note 11) The method for manufacturing a device according to Supplementary Note 10, wherein the first electrode film and the second electrode film are made of different materials. (Supplementary Note 12) The device manufacturing method according to Supplementary Note 10 or 11, wherein the first electrode film and the second electrode film are made of materials that can be etched at different selectivities. (Supplementary Note 13) The device manufacturing method according to any one of Supplementary Notes 10 to 12, wherein a recess is formed in the substrate, and in step (a), the first electrode film, the insulating film, and the second electrode film are formed to conform to the shape of the recess. (Supplementary Note 14) The device manufacturing method according to any one of Supplementary Notes 10 to 13, wherein a depth of the first recess in the extension direction of the second electrode film and a depth of the second recess in the extension direction of the first electrode film are 1 nm or more and 100 nm or less. (Supplementary Note 15) The device manufacturing method according to any one of Supplementary Notes 10 to 14, wherein a thickness of the first electrode film is 1 nm or more and 100 nm or less, a thickness of the second electrode film is 1 nm or more and 100 nm or less, and a thickness of the insulating film is 1 nm or more and 100 nm or less. (Supplementary Note 16) The device manufacturing method according to any one of Supplementary Notes 10 to 15, wherein the first electrode film is titanium nitride, and the second electrode film is tungsten. (Supplementary Note 17) The device manufacturing method according to any one of Supplementary Notes 10 to 16, wherein the insulating film is hafnia, alumina, or zirconia.(Supplementary Note 18) A method for manufacturing a device according to any one of Supplementary Notes 10 to 17, further comprising the step of: (g) forming a protective film on the capacitor.

[0054] W substrate 10 device 11 capacitor 110 multilayer film 1110 first electrode film 1111 insulating film 1112 second electrode film 111 insulating film 12 passivation layer 13 first contact 130 first insulating member 131 first hole 131a first recess 132 sacrificial film 14 second contact 140 second insulating member 141 second hole 141a second recess 142 sacrificial film 15 recess 16 insulating member

Claims

1. A device comprising: a substrate; a capacitor disposed on the substrate, the capacitor being formed by stacking a plurality of multilayer films in which a first electrode film, an insulating film, and a second electrode film are stacked in this order; a first contact and a second contact penetrating the capacitor in a thickness direction of the capacitor; a first insulating member disposed between the first contact and the second electrode film; and a second insulating member disposed between the second contact and the first electrode film.

2. The device according to claim 1, wherein the first electrode film and the second electrode film are made of different materials.

3. The device according to claim 1, wherein the first electrode film and the second electrode film are made of materials that can be etched with different selectivity ratios.

4. The device according to claim 1, wherein the substrate has a recess, and the first electrode film, the insulating film, and the second electrode film are arranged on the substrate in a shape that conforms to the recess.

5. The device described in claim 1, wherein the thickness of the first insulating member in the direction from the first contact to the second electrode film and the thickness of the second insulating member in the direction from the second contact to the first electrode film are 1 nm or more and 100 nm or less.

6. The device according to claim 1, wherein the thickness of the first electrode film is 1 nm or more and 100 nm or less, the thickness of the second electrode film is 1 nm or more and 100 nm or less, and the thickness of the insulating film is 1 nm or more and 100 nm or less.

7. The device of claim 1, wherein said first electrode film is titanium nitride and said second electrode film is tungsten.

8. The device of claim 1, wherein the insulating film is hafnia, alumina, or zirconia.

9. The device of claim 1 further comprising a passivation layer disposed over said capacitor.

10. A method for manufacturing a device, comprising the steps of: (a) forming a capacitor having a plurality of multilayer films, each of which has a first electrode film, an insulating film, and a second electrode film stacked in this order on a substrate; (b) forming a first hole and a second hole penetrating the capacitor in the thickness direction of the capacitor; (c) forming a first recess along the extension direction of the second electrode film by etching the second electrode film exposed in the first hole; (d) forming a second recess along the extension direction of the first electrode film by etching the first electrode film exposed in the second hole; (e) embedding an insulating material in the first recess and the second recess; and (f) embedding a conductor in the first hole and the second hole.

11. The method for manufacturing a device according to claim 10, wherein the first electrode film and the second electrode film are made of materials different from each other.

12. The method for manufacturing a device according to claim 10, wherein the first electrode film and the second electrode film are made of materials that can be etched at different selectivity ratios.

13. The method for manufacturing a device according to claim 10, wherein a recess is formed in the substrate, and in step (a), the first electrode film, the insulating film, and the second electrode film are formed to conform to the shape of the recess.

14. The method for manufacturing a device described in claim 10, wherein the depth of the first recess in the extension direction of the second electrode film and the depth of the second recess in the extension direction of the first electrode film are 1 nm or more and 100 nm or less.

15. The method for manufacturing a device described in claim 10, wherein the thickness of the first electrode film is 1 nm or more and 100 nm or less, the thickness of the second electrode film is 1 nm or more and 100 nm or less, and the thickness of the insulating film is 1 nm or more and 100 nm or less.

16. The method of manufacturing a device according to claim 10, wherein the first electrode film is titanium nitride, and the second electrode film is tungsten.

17. The method for manufacturing a device according to claim 10, wherein the insulating film is hafnia, alumina, or zirconia.

18. The method of claim 10, further comprising the step of: (g) depositing a protective film over the capacitor.

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