Light-emitting device, light-emitting module, method for producing light-emitting device, and method for producing light-emitting module

Abstract

Provided are a light-emitting device, a light-emitting module, a method for producing a light-emitting device, and a method for producing a light-emitting module that are capable of improving production yield while also achieving an improvement in light output.　The present invention comprises: a light-emitting element (13) that includes a light-emitting layer which emits light; a first dielectric multilayer film (39) that is formed along a side surface of the light-emitting element (13); a plate-like fluorescent material part (17) that is disposed on the light-emitting element (13) and that includes a fluorescent material which is excited by light emitted from the light-emitting layer and which produces fluorescent light; and a second dielectric multilayer film (43) that is formed along a side surface of the fluorescent material part (17).

Description

Light emitting device, light emitting module, method for manufacturing light emitting device, and method for manufacturing light emitting module

[0001] The present invention relates to a light emitting device, a light emitting module, a method for manufacturing a light emitting device, and a method for manufacturing a light emitting module.

[0002] For the purpose of improving light output, a light emitting device having a light emitting element whose side surfaces are covered with a dielectric multilayer film has been disclosed. For example, Patent Document 1 discloses a light emitting device having a support member, a plurality of semiconductor layers arranged on the support member, and a substrate including a wavelength conversion member arranged on the plurality of semiconductor layers, in which the upper surface of the support member, the side surfaces of each of the plurality of semiconductor layers, and the side surface of the substrate are covered with a dielectric multilayer film.

[0003] JP 2015-225862 A

[0004] In the light-emitting device disclosed in Patent Document 1, multiple semiconductor layers are joined to a support member, a substrate is adhered to the multiple semiconductor layers, and then a dielectric multilayer film is provided so as to continuously cover the top surface of the support member and the side surface of the substrate.

[0005] In other words, in the light-emitting device disclosed in Patent Document 1, the dielectric multilayer film is provided after the manufacturing of the light-emitting device other than the dielectric multilayer film is completed, so if, for example, a film formation defect occurs in a part of the dielectric multilayer film, the light-emitting device itself will be defective, and there is a risk that the manufacturing yield will be reduced.

[0006] The present invention has been made in consideration of the above points, and provides a light-emitting device, a light-emitting module, a method for manufacturing a light-emitting device, and a method for manufacturing a light-emitting module that can improve manufacturing yield while achieving improved light output.

[0007] The light-emitting device according to the present invention is characterized by having a light-emitting element including a light-emitting layer that emits light, a first dielectric multilayer film formed over the side surfaces of the light-emitting element, a flat phosphor portion arranged on the light-emitting element and including a phosphor that is excited by light emitted from the light-emitting layer to emit fluorescence, and a second dielectric multilayer film formed over the side surfaces of the phosphor portion.

[0008] 1 is a top view of a light emitting device according to Example 1. FIG. 2 is a cross-sectional view of the light emitting device according to Example 1. FIG. 3 is a perspective view illustrating a manufacturing process of the light emitting device according to Example 1. FIG. 4 is a top view illustrating a manufacturing process of the light emitting device according to Example 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the light emitting device according to Example 1. FIG. 6 is a cross-sectional view illustrating a manufacturing process of the light emitting device according to Example 1. FIG. 7 is a cross-sectional view illustrating a manufacturing process of the light emitting device according to Example 1. FIG. 8 is a cross-sectional view of a light emitting module as an application example of the light emitting device according to Example 1. FIG. 9 is a cross-sectional view of a light emitting device according to Example 2. FIG. 10 is a cross-sectional view of a light emitting device according to Example 3. FIG. 11 is a cross-sectional view illustrating a manufacturing process of the light emitting device according to Example 3. FIG. 12 is a cross-sectional view illustrating a manufacturing process of the light emitting device according to Example 3. FIG. 13 is a cross-sectional view illustrating a manufacturing process of the light emitting device according to Example 3. FIG. 14 is a cross-sectional view illustrating a manufacturing process of the light emitting device according to Example 3. FIG. 15 is a graph illustrating verification results for the light emitting device according to Example 3. FIG. 16 is a cross-sectional view of a light emitting module as an application example of the light emitting device according to Example 3.

[0009] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same components are designated by the same reference numerals, and the description of the same components will be omitted.

[0010] [Outline of Light-Emitting Device 100] The configuration of a light-emitting device 100 according to Example 1 will be described with reference to Figures 1 and 2. Figure 1 is a top view of the light-emitting device 100. Figure 2 is a cross-sectional view of the light-emitting device 100 taken along line 2-2 shown in Figure 1.

[0011] As shown in Fig. 2, the light emitting device 100 includes a submount 11, a light emitting element 13 disposed on the submount 11, and a phosphor portion 17 disposed on the light emitting element 13. In Fig. 2, the vertical direction in the drawing corresponds to the height direction of the light emitting device 100, and the horizontal direction in the drawing corresponds to the width direction of the light emitting device 100. In Fig. 2, a center line CL passing through the center of the light emitting device 100 in the width direction is indicated by a dashed line.

[0012] [Submount 11] First, the submount 11 will be described. The submount 11 is an element mounting substrate on which a light-emitting element 13 (described later) can be mounted. The submount 11 includes a mounting substrate 21, an anode pad 24 and a cathode pad 25 provided on the upper surface of the mounting substrate 21, and an anode mounting electrode 27 and a cathode mounting electrode 28 provided on the lower surface of the mounting substrate 21.

[0013] The mounting substrate 21 is a plate-like body made of n-type silicon (Si) and having a rectangular upper surface. Two through vias 21V are formed in the mounting substrate 21, penetrating the mounting substrate 21 in the vertical direction and having nickel (Ni) and gold (Au) formed in this order on the surface, on either side of the center line CL.

[0014] An insulating film 22 is formed on the mounting substrate 21 over the entire area excluding the areas on the upper and lower surfaces where the through vias 21V are formed. The insulating film 22 is made of, for example, silicon dioxide (SiO ２ ) consists of

[0015] The anode pad 24 and the cathode pad 25 are a pair of element mounting pads formed at a distance from each other on either side of the center line CL on the upper surface of the mounting substrate 21. The anode pad 24 and the cathode pad 25 are made of a copper (Cu) material, and their surfaces are plated with gold (Au).

[0016] The anode mounting electrode 27 and the cathode mounting electrode 28 are a pair of mounting electrodes formed at a distance from each other on either side of the center line CL on the lower surface of the mounting substrate 21. The anode mounting electrode 27 and the cathode mounting electrode 28 are made of a Cu material, and their surfaces are plated with Au.

[0017] In the submount 11, the anode pad 24 and the anode mounting electrode 27 are electrically connected via a through via 21V, and the cathode pad 25 and the cathode mounting electrode 28 are electrically connected via a through via 21V.

[0018] In the submount 11, p-type impurities such as boron (B) are diffused in an impurity diffusion region 21R, which is a region surrounding the through via 21V of the mounting substrate 21. Therefore, around the through via 21V, a double Zener diode ZD (indicated by a two-dot chain line in the figure) is formed by a pn junction between the n-type mounting substrate 21 (n-Si) and the impurity diffusion region 21R (p-Si) in which the p-type impurity has been diffused.

[0019] A double Zener diode configured in this manner does not distinguish between the anode pad 24 and the cathode pad 25, and operates normally whether the two electrodes of the light-emitting element 13 are connected to the anode pad 24 or the cathode pad 25. In other words, there is no need to determine the positive and negative poles of the anode pad 24 and the cathode pad 25 when manufacturing the light-emitting device 100, which simplifies the manufacturing process.

[0020] [Light Emitting Element 13] Next, a description will be given of the configuration of the light emitting element 13. As described above, the light emitting element 13 is disposed on the submount 11, and is a light emitting diode (LED) having a rectangular upper surface.

[0021] The light emitting element 13 includes a semiconductor structure layer 31 having a light emitting layer, a light-transmitting substrate 32 disposed on the upper surface of the semiconductor structure layer 31 , and a p-electrode 34 and an n-electrode 35 disposed on the lower surface of the semiconductor structure layer 31 .

[0022] The semiconductor structure layer 31 is a semiconductor laminate including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer (none of which are shown), each of which is made primarily of gallium nitride (GaN). When the light-emitting element 13 is driven, the light-emitting layer of the semiconductor structure layer 31 emits blue light having a peak wavelength of 450 nm.

[0023] The light-transmitting substrate 32 is a flat substrate having a rectangular upper surface. The light-transmitting substrate 32 is made of, for example, sapphire (Al ２ O ３ The light-transmitting substrate 32 is made of a material that is translucent to the blue light emitted from the light-emitting layer of the semiconductor structure layer 31, such as GaN or the like. The light-transmitting substrate 32 also serves as a growth substrate for the semiconductor structure layer 31. The light-transmitting substrate 32 is also made of a material that is translucent to the fluorescence emitted from the phosphor section 17.

[0024] The p-electrode 34 is an electrode electrically connected to the p-type semiconductor layer of the semiconductor structure layer 31. The surface of the p-electrode 34 is plated with gold (Au).

[0025] The n-electrode 35 is an electrode electrically connected to the n-type semiconductor layer via a through electrode (not shown) that vertically penetrates the light-emitting layer and p-type semiconductor layer of the semiconductor structure layer 31 and has its side surfaces covered with an insulator. In other words, the n-electrode 35 is electrically connected only to the n-type semiconductor layer and is insulated from the light-emitting layer and p-type semiconductor layer. The surface of the n-electrode 35 is plated with Au.

[0026] The p-electrode 34 and the n-electrode 35 have the same shape and size as the anode pad 24 and the cathode pad 25, respectively, and are joined to the anode pad 24 and the cathode pad 25 via solder 37 made of gold-tin (AuSn). That is, in the light-emitting device 100, the light-emitting element 13 is flip-chip mounted on the submount 11.

[0027] In the light emitting device 100, a first dielectric multilayer film 39 in which a plurality of dielectric films are stacked over the side and bottom surfaces of the light emitting element 13 is formed. Specifically, the first dielectric multilayer film 39 is formed continuously over the side surfaces of the semiconductor structure layer 31 and the light-transmitting substrate 32 and over the bottom surface of the semiconductor structure layer 31, excluding the p-electrode 34 and the n-electrode 35. In other words, on the bottom surface of the light emitting element 13, the p-electrode 34 and the n-electrode 35 are exposed from the first dielectric multilayer film 39.

[0028] The first dielectric multilayer film 39 is made of, for example, silicon oxide (SiO ２ ) and alumina (Al ２ O ３ The first dielectric multilayer film 39 is made of 48 layers (24 pairs) of titanium oxide (TiO ２ ), niobium oxide (NbO), magnesium oxide (MgO), tantalum oxide (Ta ２ O ５ ), hafnium oxide (HfO), etc. may also be used.

[0029] [Phosphor section 17] Phosphor section 17 is a rectangular plate-like body that is approximately the same size as the upper surface of light-emitting element 13 when viewed from above. The lower surface of phosphor section 17 is adhered to the upper surface of light-transmitting substrate 32 of light-emitting element 13 by adhesive member 41 made of a light-transmitting resin such as silicone resin.

[0030] The adhesive member 41 may contain phosphor particles that emit fluorescence in a color different from that of the phosphor portion 17. For example, the adhesive member 41 may contain phosphor particles of a silicon oxynitride system such as CASN (CaAlSiN:Eu) or S-CASN ((Sr,Ca)AlSiN3:Eu) that improves color rendering properties.

[0031] The phosphor section 17 is made of a phosphor that emits fluorescence when excited by blue light as excitation light emitted from the light emitting element 13. The fluorescence emitted from the phosphor when excited by blue light has a broad green to orange wavelength range spanning 480 to 700 nm, and has a yellow peak wavelength at 520 to 570 nm.

[0032] The phosphor section 17 is, for example, a ceramic phosphor plate of an alumina or glass medium (base material) containing yttrium aluminum garnet (YAG:Ce) phosphor particles using cerium (Ce) as an activator.

[0033] The phosphor section 17 is not limited to a phosphor plate containing YAG:Ce phosphor particles. For example, it may be a phosphor plate containing YAG, which is the base material of the phosphor particles, as a medium. In this case, the phosphor section 17 may be a polycrystalline or single crystalline body.

[0034] When the blue light emitted from the light emitting element 13 is incident on the phosphor section 17, part of the light passes through the phosphor section 17 as is, and part of the light excites the phosphor, causing the excited phosphor to emit fluorescence.

[0035] Therefore, excitation light that has passed through phosphor section 17 without contributing to the generation of fluorescence and fluorescence emitted from the phosphor are emitted from the upper surface of phosphor section 17. As a result, white light that is a mixture of blue light and yellow fluorescence is extracted from the upper surface of phosphor section 17. In other words, the upper surface of phosphor section 17 is the light-emitting surface of light-emitting device 100.

[0036] In the light emitting device 100, a second dielectric multilayer film 43 in which a plurality of dielectric films are stacked over the side surfaces of the phosphor section 17 is formed. The second dielectric multilayer film 43 is made of SiO 2 , similar to the first dielectric multilayer film 39. ２ and Al ２ O ３ The second dielectric multilayer film 43 is made of TiO ２ , NbO, MgO, Ta ２ O ５ , HfO, etc. may also be used.

[0037] In the light emitting device 100 of this embodiment, the first dielectric multilayer film 39 and the second dielectric multilayer film 43 are spaced apart from each other with the adhesive member 41 therebetween. In other words, the adhesive member 41 extends from between the upper surface of the translucent substrate 32 and the lower surface of the phosphor section 17 to between the first dielectric multilayer film 39 and the second dielectric multilayer film 43.

[0038] By arranging the adhesive member 41 in this manner, in the light emitting device 100, for example, it is possible to protect the end faces of the first dielectric multilayer film 39 and the second dielectric multilayer film 43, respectively.

[0039] The phosphor section 17 has submicron to micron-sized irregularities on its lower surface, which are derived from the particle size of the phosphor section 17. With this configuration, in the light-emitting device 100, the irregularities on the lower surface of the phosphor section 17 are in contact with the upper surface of the light-emitting element 13. In other words, the wave-guided light in the horizontal direction of the adhesive member 41 is diffused in the vertical direction by the irregularities on the lower surface of the phosphor section 17.

[0040] As a result, in the light emitting device 100, the light component waveguided in the width direction of the adhesive member 41 in the figure is reduced, thereby suppressing light leakage from the end face of the adhesive member 41. Even if the lower surface of the phosphor section 17 is flat, light leakage can be similarly suppressed as long as the adhesive member 41 contains phosphor particles or light diffusing particles. Furthermore, even if the upper surface of the light-transmitting substrate 32 is uneven, light leakage can be suppressed in the same way as when the lower surface of the phosphor section 17 is uneven.

[0041] [Improvement of Light Output Due to Light Reflection of Dielectric Multilayer Films] Here, the improvement of light output due to light reflection of the first dielectric multilayer film 39 and the second dielectric multilayer film 43 in the light emitting device 100 of this embodiment will be described with reference to FIG.

[0042] As described above, in the light-emitting device 100 of this embodiment, the first dielectric multilayer film 39 is formed over the side surface of the light-emitting element 13 and the area on the underside of the light-emitting element 13 excluding the p-electrode 34 and the n-electrode 35, and the second dielectric multilayer film 43 is formed over the side surface of the phosphor portion 17.

[0043] Therefore, for example, light emitted from the light-emitting element 13 and directed laterally is reflected by the first dielectric multilayer film 39 and emitted from the upper surface of the light-transmitting substrate 32. Also, for example, fluorescence generated in the phosphor section 17 and directed laterally is reflected by the second dielectric multilayer film 43 and emitted from the upper surface of the phosphor section 17.

[0044] This makes it possible to prevent light emitted from light-emitting element 13 and fluorescence generated in phosphor section 17 from leaking from the side surfaces of light-emitting element 13 and phosphor section 17 in light-emitting device 100. Therefore, most of the light emitted from light-emitting element 13 and fluorescence generated in phosphor section 17 can be emitted from light-emitting device 100.

[0045] Therefore, according to the light emitting device 100 of this embodiment, the light leaking out the side of the light emitting device 100 can be reflected by the first dielectric multilayer film 39 and the second dielectric multilayer film 43, thereby improving the output of light emitted from the light emitting surface of the light emitting device 100.

[0046] In the light-emitting device 100 of this embodiment, the first dielectric multilayer film 39 is also formed on the underside of the light-emitting element 13, i.e., the region of the semiconductor structure layer 31 excluding the p-electrode 34 and the n-electrode 35. This allows light leaking from the light-emitting element 13 toward the submount 11 to be reflected.

[0047] In particular, when the mounting substrate 21 made of Si is used for the submount 11 as in the light-emitting device 100, that is, when a silicon-based substrate is used, if light leaks from the light-emitting element 13 to the submount 11 side, the light may be absorbed by the mounting substrate 21. Furthermore, if light is absorbed by the mounting substrate 21 in this way, the output of light emitted from the light-emitting surface of the light-emitting device 100 may decrease.

[0048] In the light emitting device 100 of this embodiment, the first dielectric multilayer film 39 is also formed on the underside of the light emitting element 13 as described above, and thus light leaking from the light emitting element 13 toward the submount 11 is reflected, thereby preventing the above-described light absorption. Furthermore, the reflection of light by the first dielectric multilayer film 39 can improve the output of light emitted from the light emitting surface of the light emitting device 100.

[0049] In addition, when light emitted from the light-emitting layer of the light-emitting element 13 reaches the p-electrode 34 and the n-electrode 35, the light is reflected by the p-electrode 34 and the n-electrode 35, thereby improving the output of light emitted from the light-emitting surface of the light-emitting device 100.

[0050] In the light-emitting device 100, even if the upper surface of the light-transmitting substrate 32 of the light-emitting element 13 and the lower surface of the phosphor section 17 are flat and the adhesive member 41 does not contain phosphor or diffusing material, the thickness of the adhesive member 41 can be reduced to approximately 3 to 5 μm, thereby suppressing light leakage from the end face of the adhesive member 41.

[0051] Therefore, according to the light emitting device 100 of this embodiment, by providing the first dielectric multilayer film 39 and the second dielectric multilayer film 43, it is possible to suppress leakage of light from the light emitting device 100 and improve the output of light emitted from the light emitting surface of the light emitting device 100.

[0052] Furthermore, in the light-emitting device 100 of this embodiment, the light-emitting element 13 is mounted on the submount 11, but this is not limited to this. For example, the light-emitting element 13 may be mounted directly on a circuit board provided with wiring and electrodes.

[0053] The mounting substrate for the light emitting element 13 is made of aluminum nitride (AlN), aluminum oxide (Al ２ O ３ ), zirconium oxide (ZrO ２ When a ceramic material that reflects 70% or more of light with wavelengths in the visible light band, such as a ceramic material having a thickness of 100 nm or less, is used, the light leaking from the lower surface of the light-emitting element 13 is reflected by the substrate, i.e., light absorption by the substrate is unlikely to occur, and therefore it is not necessarily necessary to form the first dielectric multilayer film 39 on the lower surface of the light-emitting element 13.

[0054] Furthermore, in the light emitting device 100 of this embodiment, the configurations of the first dielectric multilayer film 39 and the second dielectric multilayer film 43 can be set individually. For example, the reflectance of the first dielectric multilayer film 39 for blue band light can be set higher than that of the second dielectric multilayer film 43, and the reflectance of the second dielectric multilayer film 43 for yellow band light can be set higher than that of the first dielectric multilayer film 39. In this way, the band reflectance of each of the first dielectric multilayer film 39 and the second dielectric multilayer film 43 can be optimized.

[0055] Therefore, according to the light emitting device 100 of this embodiment, by providing the first dielectric multilayer film 39 and the second dielectric multilayer film 43 separately in this manner, it is possible to improve the output of light emitted from the light emitting surface of the light emitting device 100 while suppressing light leakage from the light emitting device 100.

[0056] In addition to the reflectance described above, the first dielectric multilayer film 39 and the second dielectric multilayer film 43 may be changed in terms of material, number of pairs formed, total film thickness, etc. For example, the first dielectric multilayer film 39 and the second dielectric multilayer film 43 may be the same except for the material.

[0057] [Method for Manufacturing Light-Emitting Device 100] A method for manufacturing the light-emitting device 100 according to this embodiment will be described below with reference to Figures 3 to 6. Note that the following mainly describes a method for forming the first dielectric multilayer film 39 and the second dielectric multilayer film 43.

[0058] Fig. 3 is a perspective view showing a process of forming a first dielectric multilayer film 39 in the light-emitting element 13. Fig. 4 is a top view showing a process of forming the first dielectric multilayer film 39 in the light-emitting element 13. Figs. 5 and 6 are cross-sectional views taken along line 5-5 in Fig. 4. Fig. 7 is a cross-sectional view showing a process of forming a second dielectric multilayer film 43 in the phosphor section 17.

[0059] First, a description will be given of a method for forming the first dielectric multilayer film 39. First, a dicing sheet is prepared to which a wafer having densely packed light-emitting elements with electrodes formed thereon is attached, and the wafer is then singulated using a blade-type dicer or a laser dicer (step S1: singulation step).

[0060] Next, the dicing sheet after the light-emitting elements 13 have been separated is stretched (expanding process), creating gaps between adjacent light-emitting elements 13 to make it easier to remove each element from the dicing sheet (step S2: expanding process).

[0061] 3, good light-emitting elements 13 are selected from the individual light-emitting elements 13 obtained in step S2 using a sorter or the like and transferred to a heat-resistant base sheet 46 made of polyimide (step S3: sorting step). As a result, the p-electrode 34 and the n-electrode 35 provided on the light-emitting element 13 are covered with the base sheet 46.

[0062] Next, as shown in Figures 4 and 5, a heat-resistant cover sheet 47 made of polyimide and having a plurality of ventilation holes 47H through which the material gas can pass is attached on top of the base sheet 46 so as to be spaced apart from the base sheet 46 and create an internal space (step S4: cover sheet attachment process).

[0063] At this time, the cover sheet 47 is arranged so that each of the ventilation holes 47H is located between adjacent light-emitting elements 13. As a result, the upper surfaces of the light-emitting elements 13, i.e., the upper surface of the light-transmitting substrate 32, are covered with the cover sheet 47 as shown in FIG.

[0064] Next, as shown in FIG. 5, a first dielectric multilayer film 39 is formed on the light-emitting element 13 to which the base sheet 46 and the cover sheet 47 are attached using atomic layer deposition (ALD) (step S5: dielectric multilayer film formation process).

[0065] 6, the first dielectric multilayer film 39 is formed on the side and bottom surfaces of the light emitting element 13 in areas where the p-electrode 34 and the n-electrode 35 are not formed. Finally, the base sheet 46 and the cover sheet 47 are peeled off to obtain the light emitting element 13 on which the first dielectric multilayer film 39 is formed.

[0066] Next, we will explain the method for forming the second dielectric multilayer film 43. The second dielectric multilayer film 43 can be formed in the same manner as the first dielectric multilayer film 39, by performing the above-mentioned steps S1 to S5 on the phosphor portion 17.

[0067] That is, the phosphor portion 17 is divided into individual pieces and the good pieces are transferred to a base sheet 46 (steps S1 to S3), a cover sheet 47 is attached, and then a second dielectric multilayer film 43 is formed by atomic layer deposition (steps S4 to S5), thereby obtaining a phosphor portion 17 with the second dielectric multilayer film 43 formed on the side surface, as shown in Figure 7.

[0068] After manufacturing the light-emitting element 13 having the first dielectric multilayer film 39 formed thereon and the phosphor portion 17 having the second dielectric multilayer film 43 formed thereon as described above, the upper surface of the light-transmitting substrate 32 of the light-emitting element 13 is bonded to the lower surface of the phosphor portion 17 via an adhesive member 41, and the light-emitting element 13 is mounted on a submount 11, thereby obtaining the light-emitting device 100 as shown in FIG. 2.

[0069] In the light emitting device 100 of this embodiment, the light emitting element 13 on which the first dielectric multilayer film 39 is formed and the phosphor section 17 on which the second dielectric multilayer film 43 is formed are manufactured separately. Therefore, in the manufacturing process of the light emitting device 100, for example, the formation states of the first dielectric multilayer film 39 and the second dielectric multilayer film 43 can be checked one by one before bonding the light emitting element 13 and the phosphor section 17 together.

[0070] For example, when the light emitting element 13 is mounted on the submount 11 and the phosphor portion 17 is bonded thereon before forming the dielectric multilayer film, that is, when the light emitting device excluding the dielectric multilayer film is manufactured before forming the dielectric multilayer film, even if a film formation defect is found anywhere in the dielectric multilayer film, it can lead to a defect in the entire light emitting device, which can result in a poor manufacturing yield.

[0071] On the other hand, according to the light-emitting device 100 of this embodiment, the light-emitting device 100 can be manufactured by bonding the light-emitting element 13 formed with the first dielectric multilayer film 39, which is always in a good film formation state, to the phosphor part 17 formed with the second dielectric multilayer film 43, thereby improving the manufacturing yield.

[0072] Furthermore, if the dielectric multilayer film is formed after manufacturing all of the light-emitting device 100 except for the dielectric multilayer film as described above, the dielectric multilayer film may also extend to the wiring and electrodes formed on the submount 11, which may result in poor conductivity in the wiring and electrodes.

[0073] The light emitting device 100 of this embodiment can prevent the above-mentioned conduction failure. By separately manufacturing the light emitting element 13 on which the first dielectric multilayer film 39 is formed and the phosphor section 17 on which the second dielectric multilayer film 43 is formed, and then mounting them on the submount 11, the occurrence of such conduction failure can be suppressed.

[0074] Therefore, according to the light emitting device 100 of this embodiment, the first dielectric multilayer film 39 and the second dielectric multilayer film 43 can improve the output of light emitted from the light emitting device 100 while also improving manufacturing yield.

[0075] [Application Example of Light-Emitting Device 100] Next, an application example of the light-emitting device 100 of Example 1 will be described with reference to Fig. 8. Fig. 8 is a cross-sectional view of a light-emitting module 200. In the light-emitting module 200, the light-emitting device 100 excluding the submount 11 is shown as a light-emitting device 110.

[0076] The light emitting module 200 includes a circuit board 51 and light emitting devices 110 arranged in a row on the upper surface of the circuit board 51 .

[0077] The circuit board 51 is a flat substrate with a rectangular upper surface. The circuit board 51 is made of, for example, AlN or glass epoxy. A plurality of element mounting pads 52 are provided on the upper surface of the circuit board 51, and a light emitting device 110 is bonded to each of the element mounting pads 52. The element mounting pads 52 are composed of an anode pad 53 and a cathode pad 54.

[0078] In the light-emitting module 200, the p-electrode 34 of the light-emitting element 13 of the light-emitting device 110 is joined to the anode pad 53 via solder 56 made of tin (Sn), silver (Ag) and Cu, and the n-electrode 35 of the light-emitting element 13 of the light-emitting device 110 is joined to the cathode pad 54 via solder 56.

[0079] In the light-emitting module 200, adjacent light-emitting devices 110 on the circuit board 51 are arranged with a predetermined mounting interval MI between them. For example, the mounting interval MI is 30 μm to 100 μm, and the distance between the devices is narrow. That is, in the light-emitting module 200, the light-emitting devices 110 are mounted on the circuit board 51 at high density.

[0080] In the light-emitting module 200, as described above, a first dielectric multilayer film 39 is formed on the side and bottom surfaces of the light-emitting element 13, and a second dielectric multilayer film 43 is formed on the side surfaces of the phosphor section 17, thereby making it possible to prevent the occurrence of so-called crosstalk, a phenomenon in which light emitted from one of adjacent light-emitting devices 110 affects light emitted from another light-emitting device 110.

[0081] Furthermore, in the light-emitting module 200, since the first dielectric multilayer film 39 and the second dielectric multilayer film 43 are insulators, even if the position of each light-emitting device 110 is shifted due to a decrease in self-alignment caused by the solder 56 when the light-emitting devices 110 are densely mounted on the circuit board 51, it is possible to prevent the light-emitting devices 110 from coming into contact with each other and causing a short circuit.

[0082] 8 can also be manufactured by the following manufacturing method. First, the light-emitting element 13 provided with the first dielectric multilayer film 39, which serves as the first device member, is mounted on the circuit board 51 via solder. Next, the phosphor section 17 provided with the second dielectric multilayer film 43, which serves as the second device member, is adhered to the upper surface of the light-emitting element 13 via an adhesive member 41. Thereafter, the light-emitting module 200 can also be manufactured by heating the light-emitting module 200 to harden the adhesive member 41.

[0083] According to this method, the light emitting elements 13 are mounted first on the upper surface of the circuit board 51, so that only the light emitting elements 13 are subject to self-alignment by the adhesive member 41, which reduces the weight during self-alignment, improves self-alignment, and enables high-density mounting of the light emitting elements 13 without any disturbance. Therefore, according to this method, it is possible to form the light emitting module 200 in which the light emitting devices 110 formed by adhering the phosphor parts 17 to the upper surfaces of the light emitting elements 13 are mounted at high density without any disturbance.

[0084] Next, a light emitting device 120 according to Example 2 will be described with reference to Fig. 9. Fig. 9 is a cross-sectional view of the light emitting device 120. Note that the submount 11 shown in Example 1 is omitted from the light emitting device 120. The light emitting device 120 of Example 2 is similar to Example 1 in other respects, except for the configuration of the phosphor section 61.

[0085] In the light emitting device 120 of this embodiment, the phosphor section 61 is configured to be larger in size in top view than the light emitting element 13. Specifically, the phosphor section 61 has a width W ｅ Therefore, the phosphor section 61 can more easily take in the light emitted from the light emitting element 13.

[0086] Accordingly, the adhesive member 63 bonds the first dielectric multilayer film 39 and the second dielectric multilayer film 43 together so that the side surfaces thereof are inclined. In this case, the inclination angle of the side surfaces of the adhesive member 63 relative to the center line CL is indicated as angle θ.

[0087] For example, if the angle θ is 45°, when the light emitted from the light-emitting element 13 and guided through the adhesive member 63 in the width direction in the figure reaches the side of the adhesive member 63, the light is reflected by the side of the adhesive member 63 and travels toward the center of the top surface of the phosphor section 17.

[0088] Here, the thickness T of the adhesive member 63 ａ When the width W of the protruding portion of the phosphor portion 61 is ｅ is calculated by the following formula:

[0089]

[0090] For example, the angle θ is 45° and the thickness T ａ When the width W ｅ That is, in the light emitting device 120 of this embodiment, by making the size of the phosphor section 61 in a top view 5 μm larger than the outer edge of the top surface of the light emitting element 13, it is possible to emit light that is reflected by the side surface of the adhesive member 63 and travels toward the top surface of the phosphor section 17.

[0091] Therefore, according to the light emitting device 120 of this embodiment, by providing the first dielectric multilayer film 39 and the second dielectric multilayer film 43, it is possible to suppress leakage of light from the light emitting device 120, and to further improve the output of light emitted from the light emitting surface of the light emitting device 120 compared to the light emitting device 100 of Example 1.

[0092] Next, a light emitting device 130 according to Example 3 will be described with reference to Fig. 10. Fig. 10 is a cross-sectional view of the light emitting device 130. The light emitting device 130 differs from the light emitting device 100 of Example 1 in that it has a first reflective film 65 and a second reflective film 67 as metal reflective films, but is otherwise similar to the light emitting device 100.

[0093] The first reflective film 65 is a thin film formed on the surface of the first dielectric multilayer film 39 and covering the entire side surface of the light emitting element 13. The first reflective film 65 is made of a metal that is reflective to blue light and yellow fluorescent light. In the light emitting device 130 of this embodiment, the first reflective film 65 is made of Ag.

[0094] ​The second reflective film 67 is a thin film formed on the surface of the second dielectric multilayer film 43 and covering the entire side surface of the phosphor portion 17. The second reflective film 67 is made of a metal that is reflective to blue light and yellow fluorescence. In the light emitting device 130 of this embodiment, the second reflective film 67 is made of Ag, just like the first reflective film 65.

[0095] According to the light-emitting device 130 of this embodiment, the first reflective film 65 is formed to cover the entire side surface of the light-emitting element 13, thereby preventing, for example, light traveling within the translucent substrate 32 of the light-emitting element 13 from passing through the first dielectric multilayer film 39 from the side surface of the translucent substrate 32 and leaking out of the light-emitting device 130.

[0096] Furthermore, according to the light-emitting device 130 of this embodiment, the second reflective film 67 is formed to cover the entire side surface of the phosphor section 17, thereby preventing, for example, light traveling within the phosphor section 17 from passing through the second dielectric multilayer film 43 from the side surface of the phosphor section 17 and leaking out of the light-emitting device 130.

[0097] Therefore, according to the light emitting device 130 of this embodiment, the first reflective film 65 and the second reflective film 67 have reflectivity to blue light and yellow fluorescent light, and therefore can reflect light that travels from the side surfaces of the light emitting element 13 or the phosphor section 17 toward the outside of the light emitting device 130. As a result, when the reflected light is emitted from the top surface of the phosphor section 17, for example, an improvement in the luminous flux of the light emitted from the light emitting device 130 can be expected.

[0098] Furthermore, according to the light emitting device 130 of this embodiment, it is possible to suppress light leaking outside the light emitting device 130, so that when, for example, light emitted from the entire light emitting module in which multiple light emitting devices 130 are densely mounted on a circuit board is viewed, the contrast ratio between the brightness of the light emitted from each light emitting device 130 and the brightness of the area between adjacent light emitting devices 130 can be made more pronounced.

[0099] In the light-emitting device 130 of this embodiment, the first reflective film 65 and the second reflective film 67 are made of Ag, but this is not limited to this and they may be made of any metal that is reflective to blue light and yellow fluorescent light.

[0100] For example, ruthenium (Ru), rhodium (Rh), palladium (Pd), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), titanium (Ti), aluminum (Al), etc. may be used as the material of the first reflective film 65 and the second reflective film 67. The first reflective film 65 and the second reflective film 67 may be made of different metals, or each may be made of a plurality of metals.

[0101] In the light emitting device 130 of this embodiment, the first dielectric multilayer film 39 and the second dielectric multilayer film 43 have an outermost layer of TiO from the viewpoint of adhesion to the first reflective film 65 and the second reflective film 67. ２ It is preferable that the dielectric film is made of

[0102] [First Manufacturing Method of Light-Emitting Device 130] Here, a first manufacturing method of the light-emitting device 130 in this example will be described with reference to Fig. 11 and Fig. 12. Fig. 11 is a cross-sectional view showing the step of forming the first reflective film 65. Fig. 12 is a cross-sectional view showing the step of forming the second reflective film 67. The first manufacturing method is the same as the manufacturing method of the light-emitting device 100 in Example 1, except for the steps of forming the first reflective film 65 and the second reflective film 67.

[0103] First, a description will be given of the step of forming the first reflective film 65. As shown in Fig. 11 , the first reflective film 65 is formed by forming the first dielectric multilayer film 39 in regions of the side and bottom surfaces of the light emitting element 13 where the p-electrode 34 and the n-electrode 35 are not formed in step S5 (dielectric multilayer film formation step) of the manufacturing method of the light emitting device 100, and then depositing a metal film made of Ag by ALD on the region of the formed first dielectric multilayer film 39 that covers the side surfaces of the light emitting element 13.

[0104] Then, the base sheet 46 covering the lower surface of the light-emitting element 13 and the cover sheet 47 covering the upper surface of the light-emitting element 13 are peeled off, thereby obtaining the light-emitting element 13 having the first dielectric multilayer film 39 and the first reflective film 65 formed thereon.

[0105] In the step of forming the first dielectric multilayer film 39, it is preferable to form the first dielectric multilayer film 39 so that its thickness is greater than the thicknesses of the p-electrode 34 and the n-electrode 35. In this case, the first dielectric multilayer film 39 completely fills the spaces between the p-electrode 34 and the n-electrode 35 and the base sheet 46. In other words, there is no room for forming the first reflective film 65 in these spaces.

[0106] This prevents the first reflective film 65 from being formed in the spaces between the p-electrode 34 and the n-electrode 35 and the base sheet 46 during the process of forming the first reflective film 65. In other words, it is possible to prevent the p-electrode 34 and the n-electrode 35 from being short-circuited due to the first reflective film 65 being formed in the spaces.

[0107] Next, a description will be given of a process for forming the second reflective film 67. As shown in Fig. 12, the second reflective film 67 is formed by forming the second dielectric multilayer film 43 on the side surface of the phosphor portion 17, and then depositing a metal film made of Ag on the formed second dielectric multilayer film 43 by ALD.

[0108] Then, the base sheet 46 covering the lower surface of the phosphor section 17 and the cover sheet 47 covering the upper surface of the phosphor section 17 are peeled off, thereby obtaining the phosphor section 17 on which the second dielectric multilayer film 43 and the second reflective film 67 are formed.

[0109] Finally, the light-emitting element 13 having the first dielectric multilayer film 39 and the first reflective film 65 formed thereon is bonded to the phosphor part 17 having the second dielectric multilayer film 43 and the second reflective film 67 formed thereon using the adhesive member 41, thereby obtaining the light-emitting device 130.

[0110] [Second Manufacturing Method of Light-Emitting Device 130] Next, a second manufacturing method of the light-emitting device 130 in this example will be described with reference to Figures 13 to 17. Each of Figures 13 to 17 is a cross-sectional view showing an example of a manufacturing process of the light-emitting device 130 in the second manufacturing method.

[0111] 13, the light emitting element 13 is fixed to the base sheet 46 so that the surface on which the p-electrode 34 and the n-electrode 35 of the light emitting element 13 are formed faces up. Thereafter, a multilayer film 39M that will become the first dielectric multilayer film 39 is formed on the side and bottom surfaces of the light emitting element 13 by ALD.

[0112] At this time, the p-electrode 34 and the n-electrode 35 are also covered with the multilayer film 39M. In addition, the area of ​​the upper surface of the base sheet 46 where the light emitting element 13 is not disposed is also covered with the multilayer film 39M.

[0113] Next, as shown in Fig. 14, the multilayer film 39M formed on the light-emitting element 13 is removed by polishing or the like until the surfaces of the p-electrode 34 and the n-electrode 35 are exposed. Thereafter, as shown in Fig. 15, the light-emitting element 13 is peeled off from the base sheet 46, and the light-emitting element 13 is fixed to the base sheet 46 with the bottom surface of the light-emitting element 13 facing downwards. At this time, the multilayer film 39M formed directly on the top surface of the base sheet 46 is removed. After the light-emitting element 13 is peeled off from the base sheet 46, the light-emitting element 13 may be fixed on a base sheet prepared separately from the base sheet 46 used for film formation.

[0114] Next, as shown in FIG. 16, a reflective film 65M that will become the first reflective film 65 is formed by ALD over the surface of the first dielectric multilayer film 39 formed on the upper surface of the light-emitting element 13 and the side surface of the light-emitting element 13.

[0115] 17 , the reflective film 65M formed on the upper surface of the light emitting element 13 is removed by CMP or the like. As a result, a first reflective film 65 is formed on the surface of the first dielectric multilayer film 39 so as to cover the side surface of the light emitting element 13.

[0116] When removing the reflective film 65M, a removal method such as wet blasting may be used to prevent the first reflective film 65 formed on the side surface of the light emitting element 13 from peeling off as much as possible.

[0117] The method for forming the second reflective film 67 is the same as that for the first manufacturing method. After forming the phosphor section 17 on which the second dielectric multilayer film 43 and the second reflective film 67 are formed, the light emitting element 13 on which the first dielectric multilayer film 39 and the first reflective film 65 are formed and the phosphor section 17 on which the second dielectric multilayer film 43 and the second reflective film 67 are formed are bonded together using the adhesive member 41, thereby obtaining the light emitting device 130.

[0118] In the first and second manufacturing methods of the light-emitting device 130, the first dielectric multilayer film 39, the second dielectric multilayer film 43, the first reflective film 65, and the second reflective film 67 are formed by appropriately changing the precursor, which is the raw material that is fed into the ALD apparatus to grow a thin film.

[0119] Specifically, for example, the first dielectric multilayer film 39 is made of SiO ２ and Al ２ O ３ When these are alternately laminated, SiO ２ The layer was formed using bisethylmethylaminosilane (BEAMS) as a precursor. ２ O ３ The layer was formed using titanium chloride (TiCl ４ ) is used for the first dielectric multilayer film 39. ２ When using a layer, trimethylaluminum (TMA) is used as the precursor.

[0120] Furthermore, for example, when the first reflective film 65 and the second reflective film 67 are made of Ag, (hexafluoroacetylacetonato)(1,5-cyclooctadiene)silver(I) (i.e., hfacAg Ｉ For example, when the first reflective film 65 and the second reflective film 67 are made of Pt, trimethylmethylcyclopentadienyl platinum (MeCpPtMe) is used as a precursor. ３ ) is used.

[0121] The carrier gas (inert gas) introduced into the ALD apparatus when forming the first dielectric multilayer film 39, the second dielectric multilayer film 43, the first reflective film 65, and the second reflective film 67 is argon (Ar) and nitrogen (N２ ) are all common.

[0122] [Verification] Here, the verification conducted when examining the configuration of the light emitting device 130 of this example and the results thereof will be described with reference to Fig. 18. Fig. 18 is a graph showing the simulation results of the reflectance for light of various wavelengths in an example sample simulating the configuration of the light emitting device 130 and a comparative sample as a comparative example.

[0123] In this simulation, an example sample was used in which a dielectric multilayer film consisting of 47 pairs was formed on the side surface of a light-transmitting member and a 100 nm Ag reflective film was formed on the surface of the dielectric multilayer film, and a comparative sample was used in which only a dielectric multilayer film consisting of 47 pairs was formed on a light-transmitting member.

[0124] In the simulation of each example and comparative example, the dielectric multilayer film has Al ２ O ３ is 30 to 105 nm, TiO ２ The film formation conditions were set such that the thickness of each laminated film was appropriately set so that the total film thickness after forming 47 pairs was 3.7 μm, and the thickness of each laminated film was in the range of 30 to 75 nm. Note that in the simulations of each example and comparative example, all dielectric multilayer films were used under the same conditions.

[0125] 18, among the example samples, samples in which light was applied perpendicularly to the dielectric multilayer film and the reflective film, i.e., samples with an incident angle of 0°, are shown by solid lines, and samples with an incident angle of 80° are shown by dashed lines. Among the comparative samples, samples in which light was applied perpendicularly to the dielectric multilayer film, i.e., samples with an incident angle of 0°, are shown by dashed lines, and samples with an incident angle of 80° are shown by dotted lines.

[0126] As can be seen from the graph in Figure 18, the comparative sample showed a variation of approximately 60 to 90% in reflectance for light in the wavelength range of blue light (e.g., 430 to 490 nm) and the wavelength range of yellow fluorescent light (e.g., 550 to 590 nm) under all angle conditions.

[0127] In contrast, the example sample shows that the reflectance for light in the blue wavelength range and the yellow fluorescent wavelength range is nearly 100% under all angle conditions, which means that most of the light is reflected by the reflective film.

[0128] Thus, by forming a reflective film on the surface of the dielectric multilayer film, it is possible to improve the reflectance of blue light and yellow fluorescent light compared to when no reflective film is provided. Therefore, as in the light-emitting device 130 of this embodiment, by forming the first reflective film 65 and the second reflective film 67 on the surfaces of the first dielectric multilayer film 39 and the second dielectric multilayer film 43, respectively, it is possible to prevent light from leaking from the sides of the light-emitting device 130.

[0129] In the light emitting device 130 of this embodiment, it is sufficient to form at least one of the first reflective film 65 and the second reflective film 67. In particular, the above simulation results show that in the comparative sample not provided with a reflective film, the reflectance of yellow fluorescent light tends to be lower than the reflectance of blue light, so it is preferable to provide at least the second reflective film 67.

[0130] [Application Example of Light-Emitting Device 130] Next, an application example of the light-emitting device 130 of Example 3 will be described with reference to Fig. 19. Fig. 19 is a cross-sectional view of a light-emitting module 210. In the light-emitting module 210, the light-emitting device 130 without the submount 11 is shown as a light-emitting device 140.

[0131] Like the light emitting module 200 which is an application example of the light emitting device 100, the light emitting module 210 is configured to include a flat circuit board 51 and a plurality of light emitting devices 140 arranged in a row on the upper surface of the circuit board 51.

[0132] In the light-emitting module 210, a light-reflecting member 69 is formed on the upper surface of the circuit board 51 so as to completely fill the spaces between the plurality of light-emitting devices 140. The light-reflecting member 69 is arranged in this manner to cover the side surfaces of the light-emitting devices 140.

[0133] The light reflecting member 69 is made of a material having light reflectivity. In the light emitting module 210 of this application example, the light reflecting member 69 is made of, for example, TiO ２ It is made of silicone resin containing particles.

[0134] According to the light-emitting module 210 of this application example, the side surfaces of each of the plurality of light-emitting devices 140 are covered with the light-reflecting member 69 having light reflectivity, and therefore it is possible to reflect, for example, light leaking from the lower surface of the light-emitting element 13 through the first dielectric multilayer film 39 and light leaking from between the first reflective film 65 and the second reflective film 67. In other words, compared to the light-emitting module 200, it is possible to more effectively suppress light leakage from each of the light-emitting devices 140.

[0135] Furthermore, according to the light-emitting module 210 of this application example, similarly to the light-emitting module 200, it is possible to suppress the phenomenon in which light emitted from one of adjacent light-emitting devices 140 affects light emitted from the other light-emitting device 140, i.e., the occurrence of so-called crosstalk.

[0136] It should be noted that the light emitting module 210 of this application example does not necessarily have to be provided with the light reflecting member 69. That is, similar to the application example of the light emitting device 100, the light emitting module 210 may simply have a plurality of light emitting devices 140 arranged on the upper surface of the circuit board 51.

[0137] REFERENCE SIGNS LIST 11 submount 13 light emitting element 17, 61 phosphor portion 21 mounting base material 22 insulating film 24, 53 anode pad 25, 54 cathode pad 27 anode mounting electrode 28 cathode mounting electrode 31 semiconductor structure layer 32 light-transmitting substrate 34 p-electrode 35 n-electrode 39 first dielectric multilayer film 41, 63 adhesive member 43 second dielectric multilayer film 46 base sheet 47 cover sheet 51 circuit board 65 first reflective film 67 second reflective film 69 light-reflecting member 100, 110, 120, 130, 140 light emitting device 200 light emitting module

Claims

1. A light emitting device comprising: a light emitting element including a light emitting layer that emits light; a first dielectric multilayer film formed over a side surface of the light emitting element; a flat phosphor section disposed on the light emitting element and including a phosphor that is excited by light emitted from the light emitting layer to emit fluorescence; and a second dielectric multilayer film formed over a side surface of the phosphor section, wherein the first dielectric multilayer film and the second dielectric multilayer film are both reflective to the light emitted from the light emitting layer and the fluorescence emitted from the phosphor section.

2. The light emitting device according to claim 1, wherein the first dielectric multilayer film and the second dielectric multilayer film are spaced apart from each other.

3. The light emitting device according to claim 1, characterized in that the first dielectric multilayer film and the second dielectric multilayer film differ in at least one of the reflectance for light of a specific wavelength, the material, the number of layers, and the total film thickness.

4. The light-emitting device according to claim 2, further comprising a light-transmitting adhesive member that bonds an upper surface of the light-emitting element to a lower surface of the phosphor portion, and the first dielectric multilayer film and the second dielectric multilayer film are spaced apart from each other with the adhesive member in between.

5. The light-emitting device according to claim 1 or 2, characterized in that the light-emitting element has a pair of element electrodes formed on its underside, and the first dielectric multilayer film is formed over the entire area of ​​the underside of the light-emitting element excluding the pair of element electrodes.

6. The light emitting device according to claim 4, wherein the light emitting element is mounted on a substrate made of silicon.

7. The light emitting device according to claim 1 or 2, characterized in that the lower surface of said phosphor section is larger in size in a top view than the upper surface of said light emitting element.

8. A light emitting module comprising: a light emitting element including a light emitting layer that emits light; a first dielectric multilayer film formed over a side surface of the light emitting element; a flat phosphor section arranged on the light emitting element and including a phosphor that is excited by light emitted from the light emitting layer to emit fluorescence; and a second dielectric multilayer film formed over a side surface of the phosphor section, wherein the first dielectric multilayer film and the second dielectric multilayer film are both reflective to the light emitted from the light emitting layer and the fluorescence emitted from the phosphor section; and a circuit board, wherein a plurality of the light emitting devices are arranged at predetermined intervals on the surface of the circuit board.

9. A method for manufacturing a light emitting device, comprising: a first dielectric multilayer film formation step of forming a first dielectric multilayer film over a side surface of a light emitting element including a light emitting layer that emits light; a second dielectric multilayer film formation step of forming a second dielectric multilayer film over a side surface of a flat phosphor section including a phosphor that is excited by light emitted from the light emitting layer and emits fluorescence; and an adhesion step of adhering, with an adhesive member, an upper surface of the light emitting element on which the first dielectric multilayer film is formed and a lower surface of the phosphor section on which the second dielectric multilayer film is formed, wherein both the first dielectric multilayer film and the second dielectric multilayer film are reflective to the light emitted from the light emitting layer and the fluorescence emitted from the phosphor section.

10. A method for manufacturing a light-emitting module, comprising: a first dielectric multilayer film formation step of forming a first dielectric multilayer film over a side surface of a light-emitting element including a light-emitting layer that emits light; a second dielectric multilayer film formation step of forming a second dielectric multilayer film over a side surface of a flat phosphor section including a phosphor that is excited by light emitted from the light-emitting layer and emits fluorescence; an arrangement step of arranging, at predetermined intervals, a plurality of first device members, each having the first dielectric multilayer film formed over the side surfaces of the light-emitting element, on one main surface of a flat circuit board; and an adhesion step of adhering, via an adhesive material, a second device member, each having the second dielectric multilayer film formed over the side surfaces of the phosphor section, to an upper surface of the first device member, wherein the first dielectric multilayer film and the second dielectric multilayer film are both reflective to the light emitted from the light-emitting layer and the fluorescence emitted from the phosphor section.

11. The light emitting device according to claim 1 or 2, characterized in that a light reflective metal reflective film is formed on the surface of at least one of the first dielectric multilayer film and the second dielectric multilayer film.

12. The light emitting device according to claim 11, wherein the metal reflective film is made of Ag.

13. The light-emitting module according to claim 8, wherein a light-reflecting member having a light-reflecting property is formed on the surface of said circuit board so as to fill the spaces between adjacent light-emitting devices.

14. A method for manufacturing a light-emitting device as described in claim 9, characterized in that it comprises: a first metal reflective film formation step of forming a first metal reflective film having optical reflectivity on a surface of the first dielectric multilayer film; and a second metal reflective film formation step of forming a second metal reflective film having optical reflectivity on a surface of the second dielectric multilayer film.

Images