Optoelectronic semiconductor component and device for cleaning a fluid

Abstract

An optoelectronic semiconductor component (10) comprises a first transparent support (100) and an optoelectronic semiconductor chip (15). The optoelectronic semiconductor chip (15) has a growth substrate (110), a first contact element (124), and a semiconductor layer stack (120) which is disposed over the growth substrate (110). The semiconductor layer stack (120) contains a first semiconductor layer (121) of a first conductivity type, a second semiconductor layer (122) of a second conductivity type, and an active zone (123). The second semiconductor layer (122) is disposed on a side facing the growth substrate (110). The first contact element (124) extends at least partly along a lateral face of the semiconductor layer stack (120) and is electrically connected to the first semiconductor layer (121). The first transparent support (100) is disposed on a side of the growth substrate (110) facing away from the second semiconductor layer (122).

Description

[0001] OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND DEVICE FOR CLEANING A FLUID

[0002] DESCRIPTION

[0003] Light-emitting diodes (LEDs) that emit in a UV radiation range, especially a UVC radiation range, are widely used for disinfection of, for example, water.

[0004] In general, efforts are being made to improve the efficiency of LEDs, especially LEDs emitting in the UVC range.

[0005] The present invention is based on the object of providing an improved optoelectronic semiconductor component and an improved device for cleaning a fluid.

[0006] According to the embodiment, the problem is solved by the subject matter of the independent patent claims. Further developments are defined in the dependent patent claims.

[0007] According to embodiments, an optoelectronic semiconductor component comprises a first transparent carrier and an optoelectronic semiconductor chip. The optoelectronic semiconductor chip has a growth substrate, a first contact element, and a semiconductor layer stack arranged above the growth substrate. The semiconductor layer stack comprises a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active zone. The second semiconductor layer is arranged on a side facing the growth substrate. The first contact element extends at least partially along a side surface of the semiconductor layer stack and is electrically connected to the first semiconductor layer. Furthermore, the first transparent carrier is arranged on a side of the growth substrate facing away from the second semiconductor layer.

[0008] The optoelectronic semiconductor component may further comprise a second carrier having a first main surface arranged on a side facing the first semiconductor layer .

[0009] For example, the second carrier can be transparent.

[0010] The optoelectronic semiconductor component may comprise a plurality of optoelectronic semiconductor chips arranged between the first and the second carrier.

[0011] The optoelectronic semiconductor component may further comprise a plurality of reflective elements arranged on a side of the first or second transparent carrier facing the optoelectronic semiconductor chip between adjacent optoelectronic semiconductor chips.

[0012] Furthermore, a buffer element can be arranged between the first semiconductor layer and the second carrier.

[0013] For example, no reflective layer may be provided between the first semiconductor layer and the second carrier.

[0014] For example, the first transparent carrier may contain silicon dioxide, and the growth substrate may be a sapphire substrate. The optoelectronic semiconductor component may further comprise an alumino-silicate mixed layer between the first transparent carrier and the growth substrate. According to further embodiments, the second carrier may be non-transparent.

[0015] The optoelectronic semiconductor component may comprise a plurality of optoelectronic semiconductor chips arranged between the first and the second carrier.

[0016] The optoelectronic semiconductor component can have a plurality of reflective elements arranged on a side of the second carrier facing the optoelectronic semiconductor chip between adjacent optoelectronic semiconductor chips.

[0017] For example, the optoelectronic semiconductor component may further comprise a third carrier, which is transparent, on a side of the second carrier facing away from the first carrier, and a plurality of optoelectronic semiconductor chips between the second and the third carrier.

[0018] According to embodiments, a device for purifying a fluid comprises a reactor and the optoelectronic semiconductor component as described above. The optoelectronic semiconductor component is arranged in a central region of the reactor, and a gap between a reactor wall and the semiconductor component is provided for the flow of fluid to be purified. For example, electromagnetic radiation emerging through the transparent first or second carrier is suitable for purifying the fluid.

[0019] According to further embodiments, electromagnetic radiation emerging through the transparent first or third carrier may also be suitable for cleaning the fluid. According to further embodiments, a second main surface of the non-transparent second carrier may be coolable by fluid flowing past.

[0020] According to further embodiments, an optoelectronic semiconductor component comprises a transparent carrier with a first main surface, and an optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises a growth substrate and a semiconductor layer stack arranged above the growth substrate. The semiconductor layer stack comprises a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active zone. The optoelectronic semiconductor chip further comprises a first contact element which extends at least partially along a side surface of the semiconductor layer stack and is electrically connected to the first semiconductor layer. The second semiconductor layer is arranged on a side facing the growth substrate, and a part of the first main surface of the transparent carrier adjoins the growth substrate.

[0021] The optoelectronic semiconductor component may further comprise a second contact element which is electrically connected to the second semiconductor layer.

[0022] The optoelectronic semiconductor component may further comprise a first connection element which is electrically connected to the first contact element and extends through the transparent carrier.

[0023] The optoelectronic semiconductor component can further comprise a second connection element which is electrically connected to the second contact element and extends through the transparent carrier. A further device for purifying a fluid can comprise a reactor and the optoelectronic semiconductor component described above. The optoelectronic semiconductor component can be arranged in a central region of the reactor. A gap between a reactor wall and the semiconductor component can be provided for the flow of fluid to be purified. Electromagnetic radiation emerging through the growth substrate or the transparent first carrier can be suitable for purifying the fluid.

[0024] The accompanying drawings are intended to provide an understanding of embodiments of the invention. The drawings illustrate embodiments and, together with the description, serve to explain the same. Further embodiments and many of the intended advantages will be readily apparent from the following detailed description. The elements and structures shown in the drawings are not necessarily to scale. Like reference numerals refer to like or corresponding elements and structures.

[0025] Fig. 1A shows a cross-sectional view of an optoelectronic semiconductor device.

[0026] Fig. 1B shows a view of the back side of the optoelectronic semiconductor component.

[0027] Fig. 2A shows a cross-sectional view of a workpiece during manufacture of an optoelectronic semiconductor component according to embodiments.

[0028] Fig. 2B shows a cross-sectional view of the assembled optoelectronic semiconductor component. Fig. 3 shows a cross-sectional view of a device for cleaning a fluid.

[0029] Fig. 4 shows a cross-sectional view of another optoelectronic semiconductor component.

[0030] Fig. 5 shows a cross-sectional view of another device for cleaning a fluid.

[0031] Fig. 6 shows a cross-sectional view of a device for cleaning a fluid according to further embodiments.

[0032] In the following detailed description, reference is made to the accompanying drawings, which form a part of the disclosure, and in which specific embodiments are shown for purposes of illustration. In this context, directional terminology such as "top", "bottom", "front", "back", "over", "on", "in front of", "behind", "fore", "rear", etc., refers to the orientation of the figures just described. Since the components of the embodiments can be positioned in different orientations, the directional terminology is for the purpose of explanation only and is in no way limiting.

[0033] The description of the embodiments is not limiting, since other embodiments exist and structural or logical changes may be made without departing from the scope defined by the claims. In particular, elements of embodiments described below may be combined with elements of other described embodiments, unless the context indicates otherwise. The terms "wafer" or "semiconductor substrate" used in the following description may encompass any semiconductor-based structure having a semiconductor surface. Wafer and structure are to be understood as including doped and undoped semiconductors, epitaxial semiconductor layers, optionally supported by a base substrate, and other semiconductor structures.For example, a layer of a first semiconductor material may be grown on a growth substrate of a second semiconductor material, for example a GaAs substrate, a GaN substrate or a Si substrate, or of an insulating material, for example on a sapphire substrate.

[0034] Depending on the intended use, the semiconductor can be based on a direct or an indirect semiconductor material. Examples of semiconductor materials particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds, which can be used to generate ultraviolet, blue, or longer-wavelength light, for example, such as GaN, InGaN, AlN, AlGaN, AlGaNN, AlGaNBN, phosphide semiconductor compounds, which can be used to generate green or longer-wavelength light, for example, such as GaAsP, AlGaNP, GaP, AlGaP, as well as other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga2Oa, diamond, hexagonal BN, and combinations of the materials mentioned. The stoichiometric ratio of the compound semiconductor materials can vary. Further examples of semiconductor materials can include silicon, silicon-germanium, and germanium.In the context of this description, the term “semiconductor” also includes organic semiconductor materials.

[0035] The term "substrate" generally includes insulating, conductive, or semiconductor substrates. The term "vertical," as used in this description, is intended to describe an orientation that is substantially perpendicular to the first surface of a substrate or semiconductor body. The vertical direction may, for example, correspond to a growth direction during the growth of layers.

[0036] The terms "lateral" and "horizontal," as used in this description, are intended to describe an orientation or alignment that is substantially parallel to a first surface of a substrate or semiconductor body. This may, for example, be the surface of a wafer or a chip (die).

[0037] The horizontal direction can, for example, lie in a plane perpendicular to a growth direction during the growth of layers.

[0038] Fig. 1A shows a vertical cross-sectional view of an optoelectronic semiconductor chip 15, which may be part of an optoelectronic semiconductor component. The optoelectronic semiconductor chip 15 has a growth substrate 110 and a semiconductor layer stack 120, which is arranged above the growth substrate 110. The semiconductor layer stack 120 has, for example, a first semiconductor layer 121 of a first conductivity type, for example p-conducting, and a second semiconductor layer 122 of a second conductivity type, for example n-conducting. An active zone 123 is arranged between the first and the second semiconductor layer. The active zone can, for example, have a pn junction, a double heterostructure, a single quantum well structure (SQW) or a multiple quantum well structure (MQW) for radiation generation.The term "quantum well structure" has no meaning with regard to the dimensionality of the quantization.

[0039] It therefore includes, among other things, quantum wells, quantum wires and quantum dots as well as any combination of these layers.

[0040] For example, the first and second semiconductor layers 121, 122 may have the composition In y Al x Gai- x-y N. The growth substrate 110 can, for example, be a sapphire substrate and be transparent to electromagnetic radiation generated within the active zone 123. For example, UVC radiation, for example with a wavelength of less than 300 nm or less than 280 nm, can be generated in the region of the active zone 123.

[0041] The second semiconductor layer 122 is arranged on a side of the active zone 123 that faces the growth substrate 110. The first semiconductor layer 121 is arranged on a side of the active zone 123 that faces away from the growth substrate 110. The semiconductor layer stack 120 can have further layers. For example, an undoped buffer layer 128, which can be an AlN layer, for example, can be arranged between the growth substrate 110 and the second semiconductor layer 122. Furthermore, a stress relaxation layer 129, which can have an AlN / AlGaN superlattice structure, for example, can be arranged between the growth substrate 110 and the second semiconductor layer 122. For example, the stress relaxation layer 129 can be arranged between the buffer layer 128 and the second semiconductor layer 122. For example, a connection layer or current distribution layer 127 may be present in the rear area.

[0042] A first contact element 124 for electrically contacting the first semiconductor layer 121 can extend along a sidewall of the semiconductor layer stack 120. For example, the first contact element 124 can be insulated from the semiconductor layers by a passivation layer 126. Furthermore, a second contact element 125 can extend along a sidewall of the semiconductor layer stack 120. The second contact layer 122 is, for example, connected to the second semiconductor layer 122. The second contact element 125 is insulated from the semiconductor layers by a passivation layer 126.

[0043] As shown in Fig. 1A, no reflective elements are provided in the region of the semiconductor chip 15. It is intended that electromagnetic radiation 20 generated in the region of the active zone 123 is emitted both via the growth substrate 110 and via the top side of the first semiconductor layer 121 or the connection layer 127. In this way, emitted electromagnetic radiation 20 is extracted directly into an ambient medium.

[0044] The optoelectronic semiconductor chip 15 is applied directly to the transparent carrier 100. In the context of the present disclosure, this may mean that the growth substrate 110 and the transparent carrier 100 are directly connected to one another. This feature may further mean that the growth substrate 110 and the transparent carrier 100 are connected to one another by an intermediate layer containing elements that are components of the first transparent carrier 100 or of the growth substrate 110. For example, no adhesive is arranged between the first transparent carrier 100 and the growth substrate 110, wherein the adhesive contains elements that are not components of the transparent carrier 100 or of the growth substrate 110.

[0045] As will be shown in Fig. 1B, the first and second contact elements 124, 125 can be designed such that they occupy the smallest possible proportion of the chip area. By avoiding back reflections, losses that can occur, for example, when electromagnetic radiation passes through the chip multiple times can be prevented. Furthermore, problems that arise due to the poor availability of mirror materials that exhibit high reflectivity in the UVC range can be avoided.

[0046] Fig. 1B shows a plan view of a rear side of the semiconductor chip 15 facing away from the growth substrate 110. As shown, for example, the first contact element 124 is formed as a finger structure above the connection layer 127, so that the smallest possible portion of the rear side of the semiconductor chip 15 is covered by the material of the first contact element 124.

[0047] Fig. 2A shows a workpiece 11 during the production of an optoelectronic semiconductor component according to embodiments. As shown in Fig. 2A, a plurality of optoelectronic semiconductor chips 15, which can be constructed, for example, as shown in Fig. 1A, are applied to a first transparent carrier 100. For example, the semiconductor chips 15 can be applied to the first transparent carrier 100 via fusion bonding, laser-assisted bonding, or another surface-activated bonding method that can create a chemical bond. The growth substrate 110 faces the first transparent carrier 100.

[0048] According to further embodiments, the semiconductor chips 15 can also be bonded to the transparent carrier 100 by a so-called silicate bonding process. For example, the growth substrate 110 can each be a sapphire substrate, and the transparent carrier 100 can contain silicon dioxide. As a result of the silicate bonding process, an alumino-silicate mixed layer 101 can form as an intermediate layer between the growth substrate 110 and the adjacent transparent carrier 100. For example, a layer thickness of the alumino-silicate mixed layer 101 can be 100 μm to 500 μm.

[0049] Reflective elements 108 can be arranged between adjacent semiconductor chips 15. The reflective elements 108 can, for example, be highly reflective for the UVC range. For example, the reflective elements 108 can contain aluminum or be constructed from aluminum. This arrangement is brought into contact with a second transparent carrier 107 such that a first main surface 105 of the second carrier 107 faces the first semiconductor layer 121. For example, adhesive regions 112 can be applied over the second transparent carrier 107. Furthermore, buffer elements 113 can be applied between adjacent adhesive regions 112.

[0050] If the second transparent carrier 107 is now brought into contact with the semiconductor chips 15 of the workpiece 11, the components are combined to form an optoelectronic semiconductor component 10.

[0051] The resulting optoelectronic semiconductor component 10 has a first transparent carrier 100 and one or more optoelectronic semiconductor chips 15. The optoelectronic semiconductor chips 15 are each constructed as shown in Figs. 1A and 1B. For example, a side surface of the semiconductor chip 15 or of the growth substrate 110 can each be adjacent to air. The feature "adjacent to air" can mean, for example, that no filler material is provided between adjacent semiconductor chips 15. For example, however, a passivation layer can be conformally arranged over the side surface. The first carrier 100 can be present as a horizontal carrier. Furthermore, the second carrier 107 can also be present as a horizontal carrier. Reflective elements 108 can be arranged between adjacent optoelectronic semiconductor chips 15.For example, the buffer elements 113 can comprise a polymer, such as a fluoropolymer. When the two carriers are joined together, a fluoropolymer can, for example, flow and thus buffer the gap between the chip and the second carrier 107.

[0052] As shown in Fig. 2A and 2B, the regions of the adhesive 112 may be arranged such that they lie outside a beam path of generated electromagnetic radiation.

[0053] Fig. 3 shows an example of a device 30 for cleaning a fluid 31. The device 30 comprises a reactor 33 and, for example, the optoelectronic semiconductor component 10 shown in Fig. 2B. As is shown in Fig. 3, the optoelectronic semiconductor component 10 is arranged in a central region of the reactor 33. A space between a reactor wall 32 and the optoelectronic semiconductor component 10 is provided for the flow of the fluid to be cleaned. The fluid 31 can flow past on both sides of the optoelectronic semiconductor component 10. In this case, the electromagnetic radiation 20 emerging through the transparent first or second carrier 100, 107 is suitable for cleaning the fluid 31. The fluid 31 to be cleaned can, for example, be a liquid, for example water, or a gas to be cleaned, for example ambient air.

[0054] The optoelectronic semiconductor component 10 can, for example, extend in a longitudinal direction of the reactor 33. For example, a reflective layer 109 can be arranged on the inner wall of the reactor 33. In this way, a large part of the electromagnetic radiation 20 is reflected as reflected radiation 21. According to further embodiments, the second carrier 107 can also be designed not as a horizontally extending plate, but rather as a rod or grid.

[0055] In this way, the electromagnetic radiation 20 emerging from the optoelectronic semiconductor component 10 can be utilized on both sides of the optoelectronic semiconductor component 10. The efficiency of the radiation generation can be increased accordingly. Because, as shown in Fig. 3, the fluid 31 to be cleaned adjoins the first and second carriers 100, 107, it can be ensured, with appropriate selection of the materials and the refractive indices of the materials, that only a slight reduction in the refractive index takes place at the interface between adjacent media. In this way, back reflections due to total internal reflection and the associated absorption of the reflected radiation can be reduced. As a result, the overall efficiency of the system is greatly improved.

[0056] Fig. 4 shows a vertical cross-sectional view of a device 30 for purifying a fluid with a modified optoelectronic semiconductor component 17 according to further embodiments. In the optoelectronic semiconductor component 17 shown in Fig. 4, the second carrier 107 can be omitted. Instead, the fluid 31 to be purified can directly adjoin the growth substrate 110.

[0057] The optoelectronic semiconductor component 17 shown in Fig. 4 comprises a transparent carrier 102 with a first main surface 103 and an optoelectronic semiconductor chip 15. The optoelectronic semiconductor chip 15 comprises a growth substrate 110 and a semiconductor layer stack 120. The semiconductor layer stack 120 is arranged above the growth substrate 110. For example, the growth substrate 110 is a sapphire substrate. The growth substrate 110 is transparent to electromagnetic radiation generated by the semiconductor chip 15.

[0058] The semiconductor layer stack has a first semiconductor layer 121 of a first conductivity type, for example p-type, a second semiconductor layer 122 of a second conductivity type, for example n-type, and an active zone 123. The optoelectronic semiconductor chip 15 further has a first contact element 124, which extends at least partially along a side surface of the semiconductor layer stack and is electrically connected to the first semiconductor layer 121. The first main surface 103 of the transparent carrier 102 partially adjoins the growth substrate 110.

[0059] For example, emitted electromagnetic radiation 20 can be emitted both via the growth substrate 110 and via the first semiconductor layer 121. As shown in Fig. 4, the optoelectronic semiconductor chip 15 is hermetically sealed by the transparent carrier, which can be a glass substrate, for example. A first connection element 115 can extend through the transparent carrier 102. The first connection element 115 can be electrically connected to the first contact element 124, for example via a first contact region 117, which, for example, contains gold or is made of gold. A second connection element 116 can be connected to the second contact element 125, for example via a second contact region 118, which contains gold or is made of gold. The second connection element 116 can also extend through the transparent carrier 102.The connection technology for connecting the growth substrate 110 to the transparent carrier 102 compensates, for example, for the minimal tolerances existing between the two wafers to be connected. The growth substrate 110 can be connected to the transparent carrier 102, for example, by fusion bonding, i.e., a connection method in which ultrashort laser pulses are used at a high repetition rate. The electrical connection elements 115, 116 can be connected to the contact areas, for example, by friction welding. This is a bonding method by which tolerances are fixed.

[0060] For example, in the optoelectronic semiconductor component shown in Fig. 4, the growth substrate can be used directly as an interface to a fluid 31 to be purified. Using the growth substrate 110 as the outer surface of the optoelectronic semiconductor component 17 can optimize light extraction.

[0061] As described, the growth substrate 110 and the transparent carrier 102 within the reactor 33 are directly surrounded by the fluid 31 to be cleaned. In this way, efficient cooling can be ensured. Furthermore, there is very good thermal transmission of the waste heat from the active zone 123 to the fluid 31 to be cleaned via the semiconductor chip-growth substrate-fluid chain. Furthermore, the described design allows the generated UVC light to be transferred more homogeneously into the reactor chamber. For example, the reactor 33 can have a reactor wall 32 with a reflective layer 109 on the inside.

[0062] According to the described embodiments, due to the structure of the optoelectronic semiconductor component 10, multiple passes of UVC radiation through the semiconductor layer stack 120 can be minimized. As a result, rapid extraction and losses due to absorption can be reduced. According to further embodiments, the first carrier 100 can also be non-transparent. For example, the first carrier 100 can be embodied as a so-called MCB ("Metal Core Board") substrate. This is shown, for example, in Fig. 5. As shown in Fig. 5, the optoelectronic semiconductor chip 15, which has been discussed, for example, in Figs. 1A and 1B, is arranged between a first transparent carrier 100 and a transparent second carrier 107, which is non-transparent.The optoelectronic semiconductor chips 15 can be connected to the first transparent carrier 100 via a direct bonding method, for example, fusion bonding or laser-assisted bonding. For example, the underside of the optoelectronic semiconductor chips 15 can be applied to the electrically connected substrate 100 via an interconnection method.

[0063] For example, the optoelectronic semiconductor device 10 can be arranged in the central region of a reactor 33 for cleaning a fluid 31. The fluid 31 to be cleaned is guided past the region of the first transparent carrier 100. Furthermore, the fluid 31 can be guided past the region of the second main surface 106 of the second carrier 107. At this point, for example, cooling of the optoelectronic semiconductor component 10 takes place. The cleaning device 30 shown in Fig. 5 can, for example, have a reactor 33 with a reactor wall 32. A reflective layer 109 is applied to the inside of the reactor wall 32. Furthermore, reflective elements 108 can be applied to the inside of the reactor wall 32. For example, the reflective elements 108 can be positioned such that they vertically overlap with the semiconductor chips 15.This means that electromagnetic radiation emitted by the individual optoelectronic semiconductor chips 15 is directly reflected by the reflective elements 108 on the reactor wall 32. As further illustrated in Fig. 5, reflected radiation 21 can be reflected back into the fluid 31 to be purified at the interface between the first carrier 100 and air. Furthermore, reflective elements 108 can be arranged between adjacent optoelectronic semiconductor chips 15.

[0064] For example, the reflective elements 108 arranged on the inner wall of the reactor 32 can be triangular in shape, so that the radiation 20 emitted by the semiconductor chips 15 is reflected horizontally. This minimizes optical losses at the reactor walls. Furthermore, little UVC radiation is reflected back into the optoelectronic semiconductor chip 15, thereby reducing the absorption of the UVC radiation.

[0065] Fig. 6 shows an example of a device 30 for cleaning a fluid 31 according to further embodiments. As shown in Fig. 6, components of the device 30 are similar to those in Fig. 5. Unlike what is shown in Fig. 5, however, according to Fig. 6 the optoelectronic semiconductor chips 15 are arranged on opposite sides of the first carrier 100. In this way, a layer structure is formed which contains the transparent carriers 100, the second non-transparent carrier 107 lying therebetween, and the optoelectronic semiconductor chips 15 lying therebetween. The optoelectronic semiconductor chips can be arranged offset from one another, so that the optoelectronic semiconductor chips 15 of the upper row are arranged in spaces between adjacent optoelectronic semiconductor chips 15 of the second row and vice versa.In this way, electromagnetic radiation, which is absorbed, for example, by the reactor walls 32 or the reflective elements 108 on the reactor walls, is prevented by optoelectronic semiconductor chips 15. The device 30 for cleaning a fluid is thus arranged symmetrically. In this way, radiation is emitted into both halves of the space. The fluid 31 to be cleaned can be guided past the underside of the transparent carrier 102 or along the top side of the transparent carrier 102.

[0066] As has been described, the light extraction is significantly improved by reducing back reflection into the optoelectronic semiconductor chip 15.

[0067] Although specific embodiments have been illustrated and described herein, those skilled in the art will recognize that the specific embodiments shown and described may be replaced by a variety of alternative and / or equivalent designs without departing from the scope of the invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, the invention is limited only by the claims and their equivalents.

[0068] LIST OF REFERENCE SYMBOLS

[0069] 10 Optoelectronic semiconductor component

[0070] 11 Workpiece

[0071] 15 optoelectronic semiconductor chip

[0072] 16 Air

[0073] 17 optoelectronic semiconductor component

[0074] 20 electromagnetic radiation

[0075] 21 reflected radiation

[0076] 30 Cleaning device

[0077] 31 fluid to be cleaned

[0078] 32 reactor wall

[0079] 33 reactor

[0080] 100 first transparent carrier

[0081] 101 Mixed layer

[0082] 102 transparent carrier

[0083] 103 first main surface

[0084] 106 second main surface of the second carrier

[0085] 107 second carrier

[0086] 108 reflective element

[0087] 109 reflective layer

[0088] 110 Growth substrate

[0089] 112 adhesive

[0090] 113 Buffer element

[0091] 115 first connecting element

[0092] 116 second connection element

[0093] 117 first contact area

[0094] 118 second contact area

[0095] 120 semiconductor layer stacks

[0096] 121 first semiconductor layer

[0097] 122 second semiconductor layer

[0098] 123 active zone

[0099] 124 first contact element

[0100] 125 second contact element passivation layer connection layer buffer layer stress relaxation layer

Claims

CLAIMS 1. An optoelectronic semiconductor component (10) comprising: a first transparent carrier (100), and an optoelectronic semiconductor chip (15), which comprises: a growth substrate (110), a first contact element (124), and a semiconductor layer stack (120) arranged above the growth substrate (110), wherein the semiconductor layer stack (120) comprises: a first semiconductor layer (121) of a first conductivity type, a second semiconductor layer (122) of a second conductivity type, and an active zone (123), wherein the second semiconductor layer (122) is arranged on a side facing the growth substrate (110), the first contact element (124) extends at least partially along a side surface of the semiconductor layer stack (120) and is electrically connected to the first semiconductor layer (121), the optoelectronic semiconductor chip (15) is applied directly to the first transparent carrier (100),and the first transparent carrier (100) is arranged on a side of the growth substrate (110) facing away from the second semiconductor layer (122).

2. Optoelectronic semiconductor component (10) according to claim 1, further comprising a second carrier (107) having a first main surface (105) arranged on a side facing the first semiconductor layer (121).

3. Optoelectronic semiconductor component (10) according to claim 2, wherein the second carrier (107) is transparent.

4. Optoelectronic semiconductor component (10) according to claim 3, comprising a plurality of optoelectronic semiconductor chips (15) arranged between the first and the second carrier (100, 107).

5. Optoelectronic semiconductor component (10) according to claim 4, comprising a plurality of reflective elements (108) which are arranged on a side of the first or second transparent carrier (100, 107) facing the optoelectronic semiconductor chip (15) between adjacent optoelectronic semiconductor chips (15).

6. Optoelectronic semiconductor component (10) according to one of claims 3 to 5, further comprising a buffer element (113) between the first semiconductor layer (121) and the second carrier (107).

7. Optoelectronic semiconductor component (10) according to one of claims 2 to 6, wherein no reflective layer is provided between the first semiconductor layer (121) and the second carrier (107).

8. Optoelectronic semiconductor component (10) according to one of the preceding claims, wherein the first transparent carrier (100) contains silicon dioxide and the growth substrate (110) is a sapphire substrate, further comprising an alumino-silicate mixed layer (101) between the first transparent carrier (100) and the growth substrate (110).

9. Optoelectronic semiconductor component (10) according to Claim 2, wherein the second carrier (107) is not transparent.

10. Optoelectronic semiconductor component (10) according to claim 9, comprising a plurality of optoelectronic semiconductor chips (15) arranged between the first and the second carrier (100, 107).

11. Optoelectronic semiconductor component (10) according to claim 9, comprising a plurality of reflective elements (108) which are arranged above a first main surface (105) of the second carrier (107) facing the optoelectronic semiconductor chip (15) between adjacent optoelectronic semiconductor chips (15).

12. Optoelectronic semiconductor component (10) according to one of claims 9 to 11, further comprising a third carrier (100) which is transparent, on a side of the second carrier (107) facing away from the first carrier (100) and a plurality of optoelectronic semiconductor chips (15) between the second and the third carrier (107, 100).

13. Device (30) for cleaning a fluid (31), with a reactor (33), and the optoelectronic semiconductor component (10) according to one of claims 4 to 8, wherein the optoelectronic semiconductor component (10) is arranged in a central region of the reactor (33) and an intermediate space is provided between a reactor wall (32) and the semiconductor component (10) for the flow of fluid (30) to be cleaned, wherein electromagnetic radiation (15) emerging through the transparent first or second carrier (100, 107) is suitable for cleaning the fluid (30).

14. Device (30) for purifying a fluid (31), comprising a reactor (33), and the optoelectronic semiconductor component (10) according to Claim 12, wherein the optoelectronic semiconductor component (10) is arranged in a central region of the reactor (33) and an intermediate space is provided between a reactor wall (32) and the semiconductor component (10) for the flow of fluid (31) to be cleaned, wherein electromagnetic radiation (15) emerging through the transparent first or third carrier (100) is suitable for cleaning the fluid (31).

15. Device (30) for cleaning a fluid (31), with a reactor (33), and the optoelectronic semiconductor component (10) according to one of claims 9 to 11, wherein the optoelectronic semiconductor component (10) is arranged in a central region of the reactor (33) and an intermediate space is provided between a reactor wall (32) and the semiconductor component (10) for the flow of fluid (31) to be cleaned, wherein electromagnetic radiation emerging through the transparent first carrier (100) is suitable for cleaning the fluid, and a second main surface (106) of the second carrier (107) can be cooled by fluid (31) flowing past.

16. Optoelectronic semiconductor component (17) comprising: a transparent carrier (102) having a first main surface (103), and an optoelectronic semiconductor chip (15), which comprises: a growth substrate (110), and a semiconductor layer stack (120) arranged above the growth substrate (110), wherein the semiconductor layer stack (120): a first semiconductor layer (121) of a first conductivity type, a second semiconductor layer (122) of a second conductivity type, and an active zone (123), wherein the optoelectronic semiconductor chip (15) further comprises a first contact element (124) which extends at least partially along a side surface of the semiconductor layer stack (120) and is electrically connected to the first semiconductor layer (121), wherein the second semiconductor layer (122) is arranged on a side which faces the growth substrate (110) and a part of the first main surface (103) of the transparent carrier (102) adjoins the growth substrate (110).

17. Optoelectronic semiconductor component (17) according to claim 16, further comprising a second contact element (125) electrically connected to the second semiconductor layer (122).

18. Optoelectronic semiconductor component (17) according to claim 16 or 17, further comprising a first connection element (115) which is electrically connected to the first contact element (124) and extends through the transparent carrier (102).

19. Optoelectronic semiconductor component (17) according to claim 17 or 18, further comprising a second connection element (116) which is electrically connected to the second contact element (125) and extends through the transparent carrier (102).

20. Device (30) for purifying a fluid (31), comprising a reactor (33), and the optoelectronic semiconductor component (17) according to one of claims 16 to 19, wherein the optoelectronic semiconductor component (17) is arranged in a central region of the reactor (33) and an intermediate space is provided between a reactor wall (32) and the semiconductor component (10) for the flow of fluid (31) to be cleaned, wherein electromagnetic radiation emerging through the growth substrate (110) or the transparent carrier (102) is suitable for cleaning the fluid (31).

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