LED light-emitting element

Abstract

An LED light-emitting element, comprising: a substrate (005), the substrate (005) having an upper surface and a lower surface that are disposed opposite each other, wherein a first electrode region (007) and a second electrode region (008) are configured on the upper surface of the substrate (005); at least one LED chip (001), which is located in the first electrode region (007) on the upper surface of the substrate (005) and electrically connected to the first electrode region (007), wherein the LED chip (001) has a first surface in contact with the first electrode region (007) and a second surface opposite the first surface, and the LED chip (001) further comprises a first electrode (002) formed on the second surface, an upper surface of the first electrode (002) being provided with n positioning points (100), where n ≥ 2; a wavelength conversion layer (003) formed on the second surface of the LED chip (001); and connection wires (006), at least one positioning point (100) being electrically connected to the second electrode region (008) by means of one connection wire (006), wherein the first electrode (002) has a first length, the n positioning points (100) are arranged in the direction of the first length, and the distance between the centers of at least two positioning points (100) is greater than 1 / 2 of the first length. During a process of bonding and fixing the wavelength conversion layer (003), the wavelength conversion layer (003) can be positioned against the n positioning points (100), thereby preventing rotation and a shift.

Description

An LED light-emitting element Technical Field

[0001] The present invention relates to the technical field of semiconductor devices, and in particular to an LED light-emitting element. Background Art

[0002] LED lights are those that use LEDs (light-emitting diodes) as their light source. Due to their high brightness, rich color palette, low power consumption, and long lifespan, LEDs are widely used in automotive lighting applications, including headlights (high and low beams), position lights, daytime running lights, fog lights, taillights, brake lights, and turn signals.

[0003] Existing high-power LED car headlights (high beam and low beam), position lights, daytime running lights and other high-power LED car light products use vertical chips with a strip electrode structure. The strip electrode is on one side of the light-emitting area of ​​the vertical structure LED chip. The light-emitting area is square, and the wavelength conversion layer is attached to the light-emitting area of ​​the vertical structure LED chip. The attachment is fixed with high-temperature resistant, high-refractive index silicone. However, silicone and other fluid adhesives have a certain tension in the process of bonding and fixing the wavelength conversion layer, which will cause the wavelength conversion layer to rotate and offset slightly, resulting in the wavelength conversion layer being unable to completely cover the light-emitting area of ​​the vertical structure LED chip. As a result, the blue light of the part of the vertical structure LED chip not covered by the wavelength conversion layer cannot be converted, resulting in low brightness of the product. The rotation of the wavelength conversion layer will also cause deviations in the light output pattern of the product, and the optical design and light spot of the entire car light will deteriorate. Technical Solutions

[0004] In view of the above-mentioned shortcomings of the prior art, the present invention provides an LED light-emitting element to further improve the light uniformity of the LED light-emitting element and ensure the light pattern.

[0005] One embodiment of the present invention provides an LED light-emitting element, which includes: a substrate, the substrate having an upper surface and a lower surface arranged opposite to each other, the upper surface of the substrate being configured with a first electrode area and a second electrode area; at least one LED chip, the first electrode area located on the upper surface of the substrate being electrically connected to the first electrode area, the LED chip having a first surface in contact with the first electrode area and a second surface opposite to the first surface, the LED chip also including a first electrode formed on the second surface, the upper surface of the first electrode having n positioning points, n ≥ 2; a wavelength conversion layer formed on the second surface of the LED chip; a connecting wire, at least one of the positioning points being electrically connected to the second electrode area via the connecting wire; wherein the first electrode has a first length, the n positioning points are arranged along the first length direction, and the distance between the centers of at least two of the positioning points is greater than 1 / 2 of the first length.

[0006] Another embodiment of the present invention provides an LED light-emitting element, which includes: a substrate, the substrate having an upper surface and a lower surface arranged opposite to each other, the upper surface of the substrate being configured with a first electrode area and a second electrode area; at least one LED chip, the first electrode area located on the upper surface of the substrate being electrically connected to the first electrode area, the LED chip having a first surface in contact with the first electrode area and a second surface opposite to the first surface, the LED chip also including a first electrode formed on the second surface, the upper surface of the first electrode having n positioning points, n≥2; a wavelength conversion layer formed on the second surface of the LED chip; a connecting wire, at least one of the positioning points being electrically connected to the second electrode area through the connecting wire; wherein the first electrode has a first length, the n positioning points are arranged along the first length direction, the first side of the LED chip in the first length direction has a second length, and the distance between the centers of at least two of the positioning points is greater than 1 / 2 of the second length.

[0007] In some embodiments, the LED chip is a vertical structure chip. The LED light-emitting element can connect multiple vertical structure LED chips in series, such as three or four, depending on application requirements, by configuring corresponding conductive traces on the substrate. In alternative embodiments, the LED light-emitting element can connect other structured LED chips in series or in parallel depending on application requirements, wherein the first electrode surface of at least one vertical structure LED chip includes n positioning points.

[0008] In some embodiments, the LED chip and wavelength conversion layer of the LED light-emitting element are surrounded by white glue, and the upper surface of the substrate except the surface where the LED chip 001 is fixed is covered with white glue, and the upper surface of the white glue is not higher than the upper surface of the wavelength conversion layer.

[0009] As described above, the LED light emitting element of the present invention has the following beneficial effects:

[0010] The LED light-emitting element of the present invention sets n positioning points on the first electrode surface of the LED chip, so that the wavelength conversion layer can be positioned against the n positioning points during the process of adhesive silicone tension pulling and fixing, preventing the wavelength conversion layer from rotating and offsetting, exposing the light-emitting area of ​​the LED chip, thereby improving the uniformity of light output and ensuring the light output shape.

[0011] Other features and advantages of the present invention will be described in the following description, and in part will become apparent from the description, or will be understood by practicing the present invention. The purposes and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] FIG. 1 is a top view of an LED light emitting element in the prior art.

[0013] FIG2 shows a side view at AA in FIG1 and FIG4.

[0014] FIG. 3 is a top view of another LED light emitting element in the prior art.

[0015] FIG4 shows a top view of an LED light emitting element provided in the first embodiment of the present invention.

[0016] FIG5 is a partial enlarged view of portion B of FIG4 .

[0017] FIG6 is a schematic diagram showing the structure of an LED chip in the first embodiment.

[0018] FIG7 shows a top view of another LED light emitting element provided in the first embodiment of the present invention.

[0019] FIG8 and FIG9 are partial enlarged views of portion C of FIG2.

[0020] FIG10 is a top view of an LED light emitting element provided in the second embodiment of the present invention.

[0021] FIG11 is a top view of another LED light emitting element provided in the second embodiment of the present invention.

[0022] FIG12 is a top view of another LED light emitting element provided in the first embodiment of the present invention.

[0023] FIG13 is a top view showing a packaging structure of an LED light emitting element provided in the third embodiment of the present invention.

[0024] FIG14 is a top view showing the packaging structure of another LED light emitting element provided in the third embodiment of the present invention.

[0025] Component number description

[0026] 1. Semiconductor stack; 01. First semiconductor layer; 02. Active layer; 03. Second semiconductor layer; 04. First insulating layer; 05. Second insulating layer; 06. First metal layer; 07. First through hole; 08. Second through hole; 09. Second metal layer; 120. Light-emitting surface; 121. Back surface; 001, 0011, 0012, LED chip; 002, first electrode; 003, wavelength conversion layer; 004, second electrode; 005, substrate; 006, connecting wire; 007, first electrode area; 008, second electrode area; 009, Zener; 100, 101, 102, 103 positioning points; 11. Light-emitting area; 12. Electrode area; 110, white glue. Modes for Carrying Out the Invention

[0027] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0028] In the description of the present invention, it should be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more. In addition, the term "including" and any variations thereof all mean "at least including".

[0029] FIG1 shows a schematic top view of an LED light emitting element packaging structure in the prior art, and FIG2 shows a schematic side view at AA. As can be seen from FIG1 and FIG2, the light emitting element includes a substrate 005, the substrate 005 having an upper surface and a lower surface arranged opposite to each other, the upper surface of the substrate 005 being provided with a first electrode region 007 and a second electrode region 008; an LED chip 001, the first electrode region 007 located on the upper surface of the substrate 005 being electrically connected to the first electrode region 007 via the second electrode 004; the LED chip 001 having a first surface in contact with the first electrode region 007 and a second surface opposite to the first surface, the second surface of the LED chip 001 including a light emitting region 11 and an electrode region 008. Domain 12, the electrode region 12 is located on the side of the light-emitting region 11, and the upper surface of the electrode region 12 is configured with a strip-shaped chip first electrode 002; the wavelength conversion layer 003 is formed on the second surface of the LED chip 001, attached to and covering the light-emitting region 11 of the LED chip 001; the connecting wire 006 electrically connects the chip first electrode 002 to the second electrode region 008 on the surface of the substrate 005; the Zener 009 is located at a corner of the first electrode region 007 of the substrate, the Zener 009 is adjacent to the second electrode region 008 and is electrically connected to the second electrode region 008 through the connecting wire 006.

[0030] In the prior art, the wavelength conversion layer 003 is usually bonded and fixed to the light-emitting area 11 of the vertical structure LED chip 001 using high-temperature resistant, high-refractive index silicone. However, during the bonding and fixing process of the wavelength conversion layer 003, the silicone has a certain tension, which will cause the wavelength conversion layer 003 to rotate and shift slightly, resulting in the wavelength conversion layer 003 being unable to completely cover the light-emitting area 11 of the LED chip 001. As shown in Figure 3, the blue light of the part of the LED chip 001 that is not covered by the wavelength conversion layer cannot be converted, resulting in low brightness of the LED light-emitting element. The rotation of the wavelength conversion layer 003 will also cause the product's light output pattern to deviate, and the optical design and light spot of the entire car light will deteriorate.

[0031] In view of the above drawbacks, the present invention provides an LED light emitting element, which will be described in detail through the following embodiments. Example 1

[0032] This embodiment provides an LED light emitting element. FIG4 shows a top view of the LED light emitting element of this embodiment, and the side view at AA is consistent with that in FIG2 . As can be seen from the figure, the LED light-emitting element of this embodiment also includes a substrate 005, the substrate 005 has an upper surface and a lower surface arranged opposite to each other, and the upper surface of the substrate 005 is configured with a first electrode area 007 and a second electrode area 008; the LED chip 001, the first electrode area 007 located on the upper surface of the substrate 005 is electrically connected to the first electrode area 007 through the second electrode 004; the LED chip 001 has a first surface in contact with the first electrode area 007 and a second surface opposite to the first surface, and the second surface is configured with a first electrode 002; a wavelength conversion layer 003, formed on the second surface of the LED chip 001 and not formed on the first electrode 002; a connecting wire 006, electrically connecting the chip first electrode 002 to the second electrode area 008 on the surface of the substrate 005; a Zener 009 located at a corner of the first electrode area 007 of the substrate, the Zener 009 is adjacent to the second electrode area 008 and electrically connected to the second electrode area 008 through the connecting wire 006.

[0033] Unlike the prior art, this embodiment has n positioning points 100 disposed on the upper surface of the chip's first electrode 002, where n ≥ 2. These n positioning points are fixed to the upper surface of the first electrode 002, and at least one positioning point 100 is made of a conductive material and is electrically connected to the second electrode region 008 via a connecting wire 006, as shown in Figure 3. The first electrode 002 has a first length d1. As shown in Figure 5 (an enlarged view of the first electrode 002), the n positioning points 100 are arranged along the first length, and the distance d5 between the centers of at least two positioning points 100 is greater than 1 / 2 of the first length d1. During the process of bonding silicone tension pulling and fixing, the wavelength conversion layer 003 can be positioned against n positioning points 100 and 101 to prevent it from rotating or shifting too much, which may cause it to fail to completely cover the LED chip light-emitting area 11, resulting in the light of the LED chip 001 not covered by the wavelength conversion layer 003 being unable to be converted, making the brightness of the LED light-emitting element low, and at the same time causing the light output pattern of the LED light-emitting element to deviate and the light spot to deteriorate, thereby ensuring the light output efficiency and light pattern of the LED light-emitting element.

[0034] In this embodiment, as shown in FIG5 (a partial enlarged view of portion B of FIG4 ), in order to ensure that the positioning point 100 can play the role of positioning the wavelength conversion layer 003, the first side of the LED chip 001 in the first length direction has a second length d2, and the ratio of the first length d1 to the second length d2 is between 0.4 and 1, for example, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, etc.

[0035] In an optional embodiment, to ensure that the positioning points 100 can play a role in positioning the wavelength conversion layer 003 , the distance d5 between the centers of at least two positioning points 100 is greater than 1 / 2 of the second length d1 of the LED chip 001 .

[0036] In an optional embodiment, there are at least two positioning points 100, preferably 2, as shown in Figure 4, or 3, 4, 5, etc., as shown in Figure 7. The spacing between the n positioning points 100 can be the same or different, and the n positioning points are preferably horizontally aligned.

[0037] In an optional embodiment, LED chip 001 is a vertically structured chip. As shown in FIG6 , LED chip 001 has a light-emitting surface 120 and a back surface 121 opposite the light-emitting surface. The LED chip includes a semiconductor stack 1, which, in the direction from light-emitting surface 120 toward back surface 121, comprises a second semiconductor layer 03, an active layer 02, and a first semiconductor layer 01. At least one first through-hole 07 is formed in semiconductor stack 1 of LED chip 001. This first through-hole 07 penetrates the first semiconductor layer 01 and the active layer 02 from the back surface 121, or continues through a portion of the second semiconductor layer 03 to form in the second semiconductor layer 03. A first insulating layer 04, a first metal layer 05, a second insulating layer 06, and a second metal layer 09 are sequentially formed on the side of the first semiconductor layer 01 facing away from the active layer. The first insulating layer 04 covers the surface of the first metal layer 06. To electrically connect the first metal layer 06 to the first semiconductor layer 01, a second through-hole 08 is formed in the first insulating layer 04. This second through-hole 08 penetrates the first insulating layer 04 until the first semiconductor layer 01 is exposed. The first metal layer 06 is formed within the second through-hole 08. The first electrode 002 of the LED chip 001 is formed on the periphery of the semiconductor stack 1, located on the surface of the first metal layer 06 not covered by the first insulating layer 04. This electrode is electrically connected to the first metal layer 06 and, in turn, to the first semiconductor layer 01. The second insulating layer 05 covers the surface of the second metal layer 09, simultaneously covering the exposed first semiconductor layer 01, and is formed on the sidewalls of the first through-hole 07. To electrically connect the second metal layer 09 to the second semiconductor layer 03, the first through-hole 07 includes the second metal layer 09. A second electrode 004 is also located on the side of the second metal layer 09 facing away from the light-emitting surface 120. This second electrode 004 is electrically connected to the second metal layer 09, and thus to the second semiconductor layer 03 of the LED chip 001.

[0038] In an optional embodiment, the first electrode 002 is in the shape of a bar, rectangle, or square, which can facilitate welding of the metal wire 006 , and the side of the wavelength conversion layer 003 close to the first electrode 002 is parallel to the first electrode 002 .

[0039] In an optional embodiment, the length of the short side of the first electrode 002 is between 80 μm and 150 μm. This length can ensure that the positioning point 100 is more conveniently fixed on the surface of the first electrode 002 .

[0040] In an optional embodiment, the surface of the first electrode 002 away from the LED chip is lower than the surface of the wavelength conversion layer 003 close to the LED chip.

[0041] In an optional embodiment, the second surface of the LED chip 001 also includes a light-emitting area 11 and an electrode area 12. The electrode area 12 is located on the side of the light-emitting area 11, and a first electrode 002 is configured on its surface. The area ratio of the wavelength conversion layer to the light-emitting area is between 1-1.3, ensuring that the light-emitting area 11 is completely covered by the wavelength conversion layer 003, thereby ensuring that the light emitted from the light-emitting area 11 is completely converted.

[0042] In an optional embodiment, as shown in FIG8 (a partial enlarged view of portion C of FIG2 ), the surface of the positioning point 100 away from the first electrode 002 is a curved surface or a plane with a certain width, and the minimum distance d3 between the surface of the positioning point away from the first electrode 002 and the second surface of the LED chip is greater than 10 μm and does not exceed 1 / 2 of the thickness of the wavelength conversion layer 003, thereby ensuring that the positioning point 100 can prevent the wavelength conversion layer 003 from shifting without increasing the cost too much.

[0043] In an alternative embodiment, the positioning points 100 are metal protrusions made of a metal material such as gold or a gold alloy, fixed to the upper surface of the first electrode 002 by welding. The metal material facilitates electrical connection between the first electrode 002 and the second electrode region 008. Preferably, the positioning points 100 are made of gold to prevent alloy sulfidation or metal ion migration, which could reduce brightness.

[0044] In an optional embodiment, wavelength conversion layer 003 is rectangular or quasi-rectangular, such as a chamfered rectangle, to better conform to light-emitting area 11. The material can be a ceramic phosphor sheet, a glass phosphor sheet, or a sapphire phosphor sheet, etc., to convert the color of light emitted from light-emitting area 11 of LED chip 001. Because wavelength conversion layer 003 lacks any other protective layer, phosphor sheets made of these materials are harder and less susceptible to scratching than phosphor adhesive layers. Optionally, the thickness of wavelength conversion layer 003 is between 0.1 mm and 0.3 mm, ensuring color conversion without affecting heat dissipation from LED chip 001.

[0045] In an optional embodiment, a connecting layer (not shown in the figure) is included between the wavelength conversion layer 003 and the second surface of the LED chip 001. Optionally, the connecting layer is a fluid adhesive material such as silicone. After drying, the wavelength conversion layer 003 can be fixed to the second surface of the LED chip 001.

[0046] In an optional embodiment, as shown in FIG9 (a partial enlarged view of portion C of FIG2 ), in order to ensure that the wavelength conversion layer 003 can be positioned against the positioning point 100 during the silicone fixation process, the minimum distance d4 between the wavelength conversion layer 003 and the positioning point 100 is between 0-50 μm.

[0047] In an optional embodiment, substrate 005 can be a ceramic substrate or an EMC substrate, without specific limitations here. Suitable conductive traces can be configured on its surface based on actual needs. To ensure heat dissipation in the packaged product, a ceramic substrate is preferred. The first electrode region 007 used to bond the LED chip 001 should be at least larger than the first surface of the LED chip 001.

[0048] In an optional embodiment, the Zener 009 is fixed to a corner of the surface of the first electrode region 007 of the substrate by a die-bonding adhesive, thereby improving the ESD performance of the LED.

[0049] In an alternative embodiment, as shown in FIG12 , the first electrodes 002 can be multiple rectangular, square, or strip-shaped electrodes arranged in the same longitudinal direction, electrically connected to the first semiconductor layer 01. The wavelength conversion layer 003 is parallel to the first electrode 002 on its side adjacent to the first electrode 002. At least two of the first electrodes 002 have at least one positioning point 100 fixed to their surfaces, and at least one of the first electrodes 002 is electrically connected to the second electrode region 008 on the surface of the substrate 005 via a connecting wire 006. The distance d5 between the centers of the at least two positioning points 100 is greater than half of the second length d1 of the LED chip 001.

[0050] In an optional embodiment, the electrode region 12 of the LED chip 001 includes a first electrode 002 and a second electrode 004 of different polarities. The first electrode 002 and the second electrode 004 can be rectangular, square, or strip-shaped electrodes arranged in the same longitudinal direction. The first electrode 002 is electrically connected to the first semiconductor layer 01, and the second electrode 004 is electrically connected to the second semiconductor layer 03. The side of the wavelength conversion layer 003 adjacent to the first electrode 002 is parallel to the first electrode 002 and the second electrode 004. The first electrode 002 is electrically connected to the second electrode region 008 on the surface of the substrate 005, and the second electrode 004 is electrically connected to the first electrode region 007 on the surface of the substrate 005. At least one positioning point 100 is fixed to the surface of each of the first and second electrodes 002, 004, wherein the distance d5 between the centers of at least two positioning points 100 is greater than 1 / 2 of the second length d1 of the LED chip 001. Example 2

[0051] This embodiment also provides an LED light-emitting element. The difference from the first embodiment is that the LED light-emitting unit of this embodiment has two vertically structured LED chips 0011 and 0012 connected in series, as shown in FIG9 .

[0052] The LED light-emitting element also includes a substrate 005, which has an upper surface and a lower surface arranged opposite to each other, and the upper surface of the substrate 005 is configured with a first electrode area 007 and a second electrode area 008; the LED chips 0011 and 0012 are both located in the first electrode area 007 on the upper surface of the substrate 005 and are electrically connected to the first electrode area 007; the LED chips 0011 and 0012 both have a first surface in contact with the first electrode area 007 and a second surface opposite to the first surface, and the second surfaces of the LED chips 0011 and 0012 both include a light-emitting area 11 and an electrode area 12, the electrode area 12 is located on the side of the light-emitting area 11, and the upper surface of the electrode area 12 is configured with a strip-shaped chip first electrode 002; the wavelength conversion layer 003 is formed on the second surface of the LED chips 0011 and 0012 and is not formed on the first electrode 002, and is attached to and completely The light-emitting area 11 of the LED chips 0011 and 0012 is fully covered; the connecting wire 006, the chip first electrode 002 of the LED chip 0011 is electrically connected to the first electrode area 007 of the inherent LED chip 0012 on the substrate 005 through the connecting wire 006, and the chip first electrode 002 of the LED chip 0012 is electrically connected to the second electrode area 008 through the connecting wire 006, thereby realizing the series connection of the two chips; the Zener 009 is located at a corner of the first electrode area 007 of the substrate, the Zener 009 is adjacent to the second electrode area 008 and is electrically connected to the second electrode area 008 through the connecting wire 006; the surface of the first electrode 002 of the LED chips 0011 and 0012 also includes n positioning points 100, wherein at least one positioning point 100 of the LED chip 0012 is electrically connected to the second electrode area 008 through the connecting wire 006, as shown in Figure 9.

[0053] As shown in FIG5 , the first electrode 002 also has a first length d1, and n positioning points 100 are arranged along the first length direction, with the center-to-center distance between at least two positioning points 100 being greater than 1 / 2 of the first length d1. During the silicone adhesive tensioning and fixing process, the wavelength conversion layer 003 can be positioned against the n positioning points 100 and 101 to prevent excessive rotation or offset, which could result in failure to fully cover the LED chip's light-emitting area 11. This would result in the light from the portion of the LED chip 001 not covered by the wavelength conversion layer 003 not being converted, causing the LED light-emitting element to have low brightness. This would also cause the light output pattern of the LED light-emitting element to deviate, resulting in a poor light spot, thereby ensuring the light output efficiency and light pattern of the LED light-emitting element.

[0054] In an optional embodiment, there are at least two positioning points 100, preferably 2, or 3, 4, 5, etc., as shown in Figure 11. The spacing between the n positioning points 100 can be the same or different, and the n positioning points are preferably horizontally aligned.

[0055] In an alternative embodiment, the LED light-emitting element can connect multiple vertically structured LED chips 001 in series, such as three or four, depending on the application requirements, by configuring corresponding conductive traces on the substrate. In an alternative embodiment, the LED light-emitting element can connect other LED chips in series or in parallel depending on the application requirements, wherein the first electrode 002 of at least one vertically structured LED chip 001 includes n positioning points 100 on its surface. Example 3

[0056] This embodiment provides a packaging structure of an LED light-emitting element, as shown in Figures 13 and 14. The LED packaging structure includes the LED light-emitting element of Example 1 or Example 2. The difference from Example 1 and Example 2 is that the LED chip 001 and the wavelength conversion layer 003 are surrounded by white glue 110. The upper surface of the substrate except the surface where the LED chip 001 is fixed is covered with white glue. The upper surface of the white glue 110 is not higher than the upper surface of the wavelength conversion layer 003. The white glue can protect the LED element.

[0057] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. An LED light-emitting element, characterized in that, Comprising: A substrate having an upper surface and a lower surface disposed opposite to each other, wherein a first electrode region and a second electrode region are disposed on the upper surface of the substrate; At least one LED chip located on the first electrode region of the upper surface of the substrate and electrically connected to the first electrode region. The LED chip has a first surface in contact with the first electrode region and a second surface opposite to the first surface. The LED chip further includes a first electrode formed on the second surface, and there are n positioning points on the upper surface of the first electrode, where n≥2; A wavelength conversion layer formed on the second surface of the LED chip; A connecting wire, and at least one of the positioning points is electrically connected to the second electrode region through the connecting wire; Wherein, the first electrode has a first length, and the n positioning points are arranged along the first length direction, and the distance between the centers of at least two of the positioning points is greater than 1 / 2 of the first length.

2. The LED light-emitting element according to claim 1, characterized in that, A first side of the LED chip in the first length direction has a second length, and the ratio of the first length to the second length is between 0.4 and 1.

3. The LED light-emitting element according to claim 1, characterized in that, The n positioning points are horizontally aligned.

4. The LED light-emitting element according to claim 1, wherein, The n positioning points are fixed on the surface of the first electrode away from the LED chip.

5. The LED light-emitting element according to claim 1, wherein The first electrode is strip-shaped, rectangular or square, and the side of the wavelength conversion layer close to the first electrode is parallel to the first electrode.

6. The LED light-emitting element according to claim 1, wherein The length of the short side of the first electrode is between 80 - 150 μm.

7. The LED light-emitting element according to claim 1, characterized in that, The surface of the first electrode away from the LED chip is lower than the surface of the wavelength conversion layer close to the LED chip.

8. The LED light-emitting element according to claim 1, wherein The second surface further includes a light-emitting region and an electrode region, and the first electrode is located in the electrode region.

9. The LED light-emitting element according to claim 1, wherein, The surface of the n positioning points away from the first electrode is arc-shaped or flat.

10. The LED light-emitting element according to claim 1, characterized in that, The minimum distance between the horizontal plane of the surface of the n positioning points away from the first electrode and the horizontal plane of the second surface of the LED chip is greater than 10 μm.

11. The LED light-emitting element according to claim 1, wherein, The minimum distance between the horizontal plane of the surface of the n positioning points away from the first electrode and the horizontal plane of the second surface of the LED chip does not exceed 1 / 2 of the thickness of the wavelength conversion layer.

12. The LED light-emitting element according to claim 1, characterized in that, The n positioning points are one or two of gold and gold.

13. The LED light-emitting element according to claim 1, characterized in that, The spacing between the n positioning points is the same or different.

14. The LED light-emitting element according to claim 8, wherein, The wavelength conversion layer completely covers the light-emitting region and is not formed on the first electrode.

15. The LED light-emitting element according to claim 8, wherein The area ratio of the wavelength conversion layer to the light-emitting region is between 1 and 1.

3.

16. The LED light-emitting element according to claim 1, wherein The wavelength conversion layer is rectangular or quasi-rectangular, and the wavelength conversion layer is a ceramic fluorescent sheet, a glass fluorescent sheet or a sapphire fluorescent sheet.

17. The LED light-emitting element according to claim 1, wherein There is a connection layer between the wavelength conversion layer and the second surface, and the connection layer includes silica gel.

18. The LED light-emitting element according to claim 1, wherein The thickness of the wavelength conversion layer is between 0.1 mm and 0.3 mm.

19. The LED light-emitting element according to claim 1, characterized in that, The substrate is a ceramic substrate or an EMC substrate.

20. The LED light-emitting element according to claim 1, wherein, The minimum distance between the wavelength conversion layer and the positioning points is between 0 and 50 μm.

21. The LED light-emitting element according to claim 1, characterized in that, Multiple LED chips are connected in series.

22. An LED light-emitting element, characterized in that, Comprising: A substrate having an upper surface and a lower surface disposed opposite to each other, wherein a first electrode region and a second electrode region are disposed on the upper surface of the substrate; At least one LED chip, which is electrically connected to the first electrode region on the upper surface of the substrate. The LED chip has a first surface in contact with the first electrode region and a second surface opposite to the first surface. The LED chip further includes a first electrode formed on the second surface, and there are n positioning points on the upper surface of the first electrode, where n≥2; A wavelength conversion layer, which is formed on the second surface of the LED chip; A connecting wire, and at least one of the positioning points is electrically connected to the second electrode region through the connecting wire; Wherein, the first electrode has a first length, the n positioning points are arranged along the first length direction, the first side of the LED chip in the first length direction has a second length, and the distance between the centers of at least two of the positioning points is greater than 1 / 2 of the second length.

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