Power assembly and electric motor controller

Abstract

Provided in the present application are a power assembly and an electric motor controller. The power assembly comprises a power module, a radiator and an insulating member, wherein the power module comprises a lead-out terminal, the insulating member is arranged on the surface of the radiator on the side facing the power module, and a projection of the insulating member in the thickness direction of the power assembly covers a projection of the lead-out terminal on the radiator. The projection of the insulating member in the thickness direction of the power assembly covers the projection of the lead-out terminal on the radiator, and safety-compliant electrical insulation between the lead-out terminal and the radiator is ensured by means of the insulating member, thereby improving the electrical insulation performance between the power module and the radiator.

Description

Power components and motor controllers

[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office of China on December 28, 2023, with application number 202311836128.7 and invention name “Power Component and Motor Controller”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of new energy technology, and in particular to a power component and a motor controller. Background Art

[0003] In new energy vehicles, insulated gate bipolar transistors (IGBTs) or silicon carbide (SiC) power modules are core components for power conversion. As these products continue to evolve toward higher voltages, higher efficiency, and higher power density, heat dissipation density is also increasing. This requires reducing the thermal resistance of the entire link from chip to heat sink, improving the power module's heat dissipation capabilities, and promptly dissipating the heat generated by the chip. Typically, power modules are cooled by water cooling, with interface materials such as thermal grease filling the gap between the water-cooled radiator and the power module. Additional screws are required to secure the radiator to the power module, resulting in poor electrical insulation between the radiator and the power module. Summary of the Invention

[0004] The technical problem to be solved by the embodiments of the present application is to provide a power component and a motor controller that are conducive to improving electrical insulation performance.

[0005] In a first aspect, the present application provides a power component, which includes a power module, a heat sink and an insulating member. The power module includes a lead terminal. The insulating member is arranged on the surface of the heat sink facing the power module. In the thickness direction of the power component, the projection of the insulating member covers the projection of the lead terminal on the heat sink.

[0006] An insulating part is provided on the surface of the heat sink. In the thickness direction of the power component, the projection of the insulating part covers the projection of the lead terminal on the heat sink. The insulating part ensures the safety electrical insulation between the lead terminal and the heat sink, thereby improving the electrical insulation performance between the power module and the heat sink.

[0007] In combination with the first aspect, in a possible implementation, the insulating member includes a base plate and a positioning portion, one end of the positioning portion is connected to the base plate, and the other end of the positioning portion extends in a direction away from the base plate, and in the thickness direction of the power component, the base plate and the lead terminal are arranged opposite to each other in the thickness direction of the power component; the positioning portion and the base plate are arranged to form a receiving groove, and the receiving groove accommodates at least part of the power module.

[0008] In this possible implementation, in the thickness direction of the power component, the base plate is located between the lead terminal and the heat sink. The setting of the base plate ensures electrical insulation between the lead terminal and the heat sink, and the base plate and the positioning portion are surrounded by a receiving groove. At least part of the power module is accommodated in the receiving groove, so that the insulating part as a whole plays a role in positioning the power module, which is beneficial to improving the installation efficiency of the power module and the heat sink.

[0009] In combination with the first aspect, in a possible implementation, the heat sink includes a heat dissipation substrate and a boss, the boss is protruding from the surface of the heat dissipation substrate facing the power module, and the bottom plate is arranged on the surface of the heat dissipation substrate facing the power module and is located on opposite sides of the boss.

[0010] In this possible implementation, a boss is provided on the surface of the heat sink facing the power module. The provision of the boss increases the electrical distance between the heat dissipation substrate and the power module, thereby ensuring electrical insulation between the heat dissipation substrate and the lead-out terminal. Base plates are provided on opposite sides of the boss, and the base plates can electrically insulate the portion of the heat dissipation substrate where the boss is not provided from the lead-out terminal.

[0011] In combination with the first aspect, in a possible implementation, along the arrangement direction of the heat dissipation substrate and the bosses, the thickness of the insulating member is smaller than the height of the bosses.

[0012] In this possible implementation, the thickness of the insulating member is smaller than the height of the boss, so that a portion of the boss can extend into the receiving groove surrounded by the insulating member, facilitating the connection between the surface of the boss facing the power module and the power module in the receiving groove.

[0013] In combination with the first aspect, in a possible implementation, the power component further includes a package body, which encapsulates the power module, and at least a portion of the package body is located in the receiving groove.

[0014] In this possible implementation, the package body seals the power module, preventing external moisture from entering the power module and avoiding short circuit in the power module, and at least part of the package body is located in the receiving groove, so that the insulating part positions the package body and the power module in the package body.

[0015] In combination with the first aspect, in one possible implementation, a protrusion is formed on the outer edge of the package body; along the arrangement direction of the boss and the base plate, the protrusion is protruded along the side away from the boss, and the spacing between the boss and the base plate is less than or equal to the length of the protrusion along the side away from the boss.

[0016] In this possible implementation, when the spacing between the boss and the base plate is equal to the length of the protrusion along the side away from the boss, the protrusion and the base plate together realize electrical insulation between the lead terminal and the heat sink, and in the thickness direction of the power component, the projection of the base plate on the heat sink and the projection of the protrusion on the heat sink will not overlap, thereby reducing the setting of the base plate and effectively reducing the production cost; when the spacing between the boss and the base plate is less than the length of the protrusion along the side away from the boss, in the thickness direction of the power component, the projection of the base plate on the heat sink and the projection of the protrusion on the heat sink partially overlap, so as to enhance the electrical insulation performance between the lead terminal and the heat sink.

[0017] In combination with the first aspect, in one possible implementation, the power module includes a chip and a thermally conductive substrate, the chip is arranged on the side of the thermally conductive substrate facing away from the heat sink, the surface of the thermally conductive substrate facing the sintered layer is exposed to the package body, and the sintered layer is fixedly connected between the thermally conductive substrate and the boss.

[0018] In this possible implementation, the surface of the thermally conductive substrate facing the sintered layer is exposed to the package body, eliminating the obstruction of the package body and facilitating the connection between the surface of the thermally conductive substrate facing the sintered layer and the sintered layer.

[0019] In combination with the first aspect, in a possible implementation, along the thickness direction of the power component, the projected area of ​​the boss is smaller than or equal to the projected area of ​​the thermal conductive substrate.

[0020] In this possible implementation, since a packaging body is provided on the outer edge of the thermally conductive substrate, the surface of the packaging body facing the radiator and the surface of the thermally conductive substrate facing the radiator are basically on the same surface. When the boss is connected to the thermally conductive substrate, if the projected area of ​​the boss is larger than the projected area of ​​the thermally conductive substrate, the portion of the boss that exceeds the thermally conductive substrate will squeeze the packaging body, thereby destroying the sealing of the packaging body to the power module. When the projected area of ​​the boss is less than or equal to the projected area of ​​the thermally conductive substrate, the boss can reduce the squeezing of the packaging body when connected to the thermally conductive substrate, thereby ensuring the sealing of the packaging body to the power module.

[0021] In combination with the first aspect, in a possible implementation, the thermally conductive substrate includes a first thermally conductive layer, a thermally conductive insulating layer, and a second thermally conductive layer stacked in sequence, and the thermally conductive insulating layer is made of a thermally conductive insulating sheet or a thermally conductive insulating film.

[0022] In this possible implementation, the thermal insulating layer is made of a thermal insulating sheet having good thermal conductivity, which is beneficial to improving the overall heat dissipation capacity of the power module; the thermal insulating layer is made of a thermal insulating film having good toughness, which is beneficial to improving the overall reliability of the thermal substrate.

[0023] In combination with the first aspect, in one possible implementation, the thermally conductive substrate includes a first thermally conductive substrate and a second thermally conductive substrate, the first thermally conductive substrate and the second thermally conductive substrate are respectively arranged on opposite sides of the chip, and the first thermally conductive substrate and / or the second thermally conductive substrate are connected to the boss through a sintered layer.

[0024] In this possible implementation, a first heat-conducting substrate and a second heat-conducting substrate are respectively arranged on opposite sides of the chip for heat dissipation, thereby increasing the heat dissipation area of ​​the power module and improving the heat dissipation efficiency of the power module; at least one of the first heat-conducting substrate and the second heat-conducting substrate is connected to the boss through a sintered layer, that is, at least one of the first heat-conducting substrate and the second heat-conducting substrate is connected to the heat sink through the sintered layer, further improving the heat dissipation efficiency and heat dissipation capacity of the power module.

[0025] In combination with the first aspect, in a possible implementation, the heat sink includes a first heat sink and a second heat sink, the first heat sink includes a first heat dissipation substrate and a first boss, the second heat sink includes a second heat dissipation substrate and a second boss, the first heat dissipation substrate and the second heat dissipation substrate are located on opposite sides of the chip, the first boss is protruded from the surface of the first heat dissipation substrate facing the chip, and the second boss is protruded from the surface of the second heat dissipation substrate facing the chip, the sintered layer includes a first sintered layer and a second sintered layer, the first sintered layer is fixed between the first boss and the first thermally conductive substrate, and the second sintered layer is fixed between the second boss and the second thermally conductive substrate.

[0026] In this possible implementation, a first heat sink and a second heat sink are respectively provided on opposite sides of the chip, thereby improving the heat dissipation efficiency and heat dissipation capacity of the power module; and the first heat sink is provided with a first boss, and the second heat sink is provided with a second boss, thereby increasing the electrical distance between the first heat sink and the power module, and between the second heat sink and the power module, thereby ensuring electrical insulation between the first heat sink and the lead-out terminal, and between the second heat sink and the lead-out terminal, and no additional screws are required between the first heat sink and the power module, and between the second heat sink and the power module, thereby simplifying the installation process and realizing the integrated integration of the power module with the first heat sink and the second heat sink, thereby reducing the interface thermal resistance and improving the heat dissipation capacity of the power module.

[0027] In combination with the first aspect, in a possible implementation, the insulating member includes a first insulating member and a second insulating member, the first insulating member is arranged on the surface of the first radiator facing the second radiator, the second insulating member is arranged on the surface of the second radiator facing the first radiator, and the first insulating member or the second insulating member is provided with a positioning portion.

[0028] In this possible implementation, one of the first insulating member and the second insulating member is provided with a positioning portion, and the power module can be positioned by the positioning portion of one of the insulating members, thereby reducing the manufacturing cost of the insulating members.

[0029] In combination with the first aspect, in a possible implementation, an outer edge of the boss is provided with a chamfer.

[0030] In this possible implementation method, when the boss is connected to the sintered layer, the excess sintered layer can flow from the chamfer to the side of the boss, preventing the excess sintered layer from flowing to the power module, reducing the impact of the sintering connection on the power module, and the chamfer setting makes the weld at the edge after the boss is connected to the sintered layer thicker, thereby improving the reliability of the connection between the boss and the sintered layer.

[0031] In a second aspect, a motor controller includes a capacitor and a power component provided in any implementation manner of the first aspect, wherein the lead terminal of the power module is connected to the thermal conductive substrate of the power module, the capacitor is connected to the power module through the lead terminal, and the capacitor is used to provide voltage to the power module.

[0032] By adopting the power component as in the first aspect, since the power component has better electrical insulation performance and better heat dissipation capability, the motor controller can have a higher current output capability at the same voltage, thereby improving the power conversion efficiency of the motor controller; since the power module is integrated with the heat sink through the sintering layer, the size of the motor controller can be reduced accordingly, thereby improving the power density of the motor controller.

[0033] In a third aspect, a powertrain includes a motor and the motor controller provided in the second aspect, wherein the motor is connected to the motor controller.

[0034] By adopting a motor controller such as the second aspect, the output power and power density of the powertrain can be improved because the motor controller has a higher current output capability and is smaller in size and weight. It can provide higher electrical energy to the motor, thereby enabling the motor to output higher kinetic energy, and thus giving the powertrain a higher driving force.

[0035] In a fourth aspect, a vehicle comprises wheels and the powertrain provided in the third aspect, wherein the powertrain is connected to the wheels and is used to provide power to the wheels.

[0036] By adopting a powertrain as in the third aspect, since the powertrain can provide higher driving force, the vehicle has higher power, thereby providing the driver with a better driving experience. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the drawings required for use in the embodiments of the present application or the background technology will be described below.

[0038] FIG1 is a schematic structural diagram of a vehicle provided in one embodiment of the present application;

[0039] FIG2 is a schematic diagram of a powertrain provided in one embodiment of the present application;

[0040] FIG3 is a schematic structural diagram of a power component with a single-sided heat dissipation structure according to an embodiment of the present application;

[0041] FIG4 is an enlarged schematic diagram of a position IV in the power assembly shown in FIG3 ;

[0042] FIG5 is a schematic structural diagram of another power component with a single-sided heat dissipation structure provided by an embodiment of the present application;

[0043] FIG6 is a schematic structural diagram of a power component with a single-sided heat dissipation structure according to an embodiment of the present application;

[0044] FIG7 is a schematic structural diagram of a power component with a double-sided heat dissipation structure provided by an embodiment of the present application;

[0045] FIG8 is a schematic structural diagram of another power component with a double-sided heat dissipation structure provided by an embodiment of the present application;

[0046] FIG9 is a schematic structural diagram of a power component with another double-sided heat dissipation structure provided by an embodiment of the present application.

[0047] Explanation of the accompanying symbols: Power component-100, power module-10, thermally conductive substrate-11, first thermally conductive substrate-11a, second thermally conductive substrate-11b, first thermally conductive layer-111, thermally conductive insulating layer-112, second thermally conductive layer-113, chip-12, lead terminal-13, interconnection pillar-14, sintered layer-20, first sintered layer-20a, second sintered layer-20b, insulating member-30, first insulating member-30a, second insulating member-30b, bottom plate-31, positioning portion-32, through hole-33, receiving groove-34, heat sink-40, first heat sink-40a, second heat sink-40 b, heat dissipation substrate 41, first heat dissipation substrate 41a, second heat dissipation substrate 41b, heat dissipation teeth 42, housing 43, boss 44, first boss 44a, second boss 44b, chamfer 441, heat dissipation channel 45, package 50, protrusion 51, motor controller 210, capacitor 2101, motor 220, powertrain 200, wheel 300, vehicle 1000. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical solutions and advantages of this application clearer, this application will be further described in detail below with reference to the accompanying drawings.

[0049] Please refer to Figure 1, which is a structural schematic diagram of a vehicle 1000 provided in an embodiment of the present application. The vehicle 1000 includes wheels 300 and a powertrain 200 provided in the present application. The powertrain 200 is connected to the wheels 300, and the powertrain 200 is used to provide power to the wheels 300 to drive the wheels 300 forward or backward. In the present application, the vehicle 1000 can be an electric vehicle / electric vehicle (EV), a pure electric vehicle (PEV / BEV), a hybrid electric vehicle (HEV), an extended-range electric vehicle (REEV), a plug-in hybrid electric vehicle (PHEV), a new energy vehicle (NEV), etc.

[0050] Please refer to Figure 2, which is a schematic diagram of a powertrain 200 provided in accordance with an embodiment of the present application. Powertrain 200 includes a motor 220 and a motor controller 210 provided herein. Motor controller 210 is connected to motor 220 and controls the conversion of DC power within the vehicle 1000 power supply into AC power to drive motor 220. Driven by motor 220, wheels 300 move, thereby driving vehicle 1000 forward or backward.

[0051] The motor controller 210 includes a capacitor 2101 and the power component 100 provided in this application.

[0052] Please refer to Figure 3, which is a schematic diagram of the structure of a power component 100 with a single-sided heat dissipation structure provided in an embodiment of the present application. As shown in Figure 3, the power component 100 includes a power module 10, a sintered layer 20, a heat sink 40, an insulating member 30, and a package body 50. The power module 10, the sintered layer 20, and the heat sink 40 are stacked in sequence, and the sintered layer 20 is fixed between the power module 10 and the heat sink 40. By setting the sintered layer 20 to connect and fix the heat sink 40 and the power module 10, no additional screws are required to fix the power module 10 and the heat sink 40, simplifying the installation process between the power module 10 and the heat sink 40. The power module 10 is directly connected to the heat sink 40 through the sintered layer 20, realizing the integrated integration of the power module 10 and the heat sink 40, which is conducive to reducing the interface thermal resistance and improving the heat dissipation capacity of the power module 10. The high thermal conductivity sintered layer 20 is used instead of silicone grease to further reduce the interface thermal resistance and improve the heat dissipation capacity of the power module 10. The insulating member 30 is disposed on the surface of the heat sink 40 facing the power module 10. This ensures safety electrical insulation between the power module 10 and the heat sink 40, thereby improving the electrical insulation performance between the power module 10 and the heat sink 40. The encapsulation body 50 encapsulates the power module 10, sealing it and preventing moisture from entering the power module 10, thereby preventing short circuits in the power module 10.

[0053] The power module 10 includes a thermally conductive substrate 11, a chip 12, and lead terminals 13. Both the chip 12 and lead terminals 13 are located on the side of the thermally conductive substrate 11 facing away from the heat sink 40. The lead terminals 13 are used to connect capacitors 2101 to the thermally conductive substrate 11, allowing capacitors 2101 to provide voltage to the power module 10. The surface of the thermally conductive substrate 11 facing the sintered layer 20 is exposed to the package 50, eliminating obstruction from the package 50 and facilitating connection between the surface of the thermally conductive substrate 11 facing the sintered layer 20 and the sintered layer 20.

[0054] The power module 10 has a single-sided heat dissipation structure, with a heat sink 40 disposed on one side of the power module 10 in the thickness direction, reducing the overall volume of the power assembly 100. As shown in FIG3 , there is only one power module 10 , which is a plastic-encapsulated power module, such as a plastic-encapsulated IGBT or SiC power module.

[0055] The number of the chip 12 can be one or more. When the number of the chip 12 is more than one, the chips 12 are arranged on the thermal conductive substrate 11 at intervals, and the lead terminals 13 are arranged at opposite ends of the chips 12 .

[0056] One end of the lead terminal 13 is connected to the thermally conductive substrate 11, and the other end of the lead terminal 13 is exposed to the package 50. The portion of the lead terminal 13 exposed from the package 50 extends along the length of the power component 100 to connect to the capacitor 2101. Optionally, the lead terminal 13 may also extend along the thickness of the power component 100.

[0057] The surface of the thermally conductive substrate 11 may be provided with a plating layer. Specifically, the plating layer may be applied to the surface of the thermally conductive substrate 11 by chemical plating or electroplating. The plating layer material may be any one of Sn, Ag or Au.

[0058] The thermally conductive substrate 11 includes a first thermally conductive layer 111, a thermally conductive insulating layer 112, and a second thermally conductive layer 113 stacked in sequence. The surface of the first thermally conductive layer 111 facing the sintered layer 20 is exposed to the package body 50. The first thermally conductive layer 111 and the second thermally conductive layer 113 are both metal thermally conductive layers. For example, the first thermally conductive layer 111 and the second thermally conductive layer 113 are both made of metal copper, metal aluminum, or other thermally conductive materials. The materials used to make the first thermally conductive layer 111 and the second thermally conductive layer 113 can be the same or different, and are not specifically limited. The material used to make the thermally conductive insulating layer 112 includes a thermally conductive insulating sheet or a thermally conductive insulating film, wherein the thermally conductive insulating sheet can be ceramic, such as Al2O3, Si3N4, or AlN. The thermally conductive insulating sheet has good thermal conductivity, which is beneficial to improving the heat dissipation capacity of the power module 10. The thermally conductive insulating film itself is thin and has good toughness, which is beneficial to improving the overall reliability of the thermally conductive substrate 11.

[0059] The first heat-conducting layer 111 is fixedly connected to the sintered layer 20, and the second heat-conducting layer 113 is connected to the chip 12 and the lead terminal 13. The heat generated by the chip 12 and the lead terminal 13 is conducted to the thermal insulation layer 112 through the second heat-conducting layer 113, and then conducted from the thermal insulation layer 112 to the first heat-conducting layer 111, and then conducted to the outside of the power component 100 through the sintered layer 20 and the heat sink 40.

[0060] Please refer to Figure 4. Along the arrangement direction of the sintered layer 20 and the heat sink 40, the thickness of the sintered layer 20 is greater than or equal to 50μm and less than or equal to 300μm. For example, the thickness of the sintered layer 20 can be recorded as H1. The value of the thickness H1 of the sintered layer 20 can be 50μm, 75μm, 125μm, 140μm, 160μm, 180μm, 230μm, 250μm, 275μm, or 300μm, not listed one by one.

[0061] If the thickness of the sintered layer 20 is less than 50 μm, the thickness of the sintered layer 20 is too small, and the reliability of the sintered connection between the sintered layer 20 and the heat sink 40 and the power module 10 is low; if the thickness of the sintered layer 20 is greater than 300 μm, the thickness of the sintered layer 20 is too large, which will increase the production cost of the power component 100 and cause the thermal resistance between the power module 10 and the heat sink 40 to increase; in this application, the thickness of the sintered layer 20 is set to be greater than or equal to 50 μm and less than or equal to 300 μm, so that the reliability of the connection between the sintered layer 20 and the heat sink 40 and the power module 10 is higher, and the thermal resistance between the power module 10 and the heat sink 40 is reduced, so that the heat generated by the power module 10 can be conducted to the heat sink 40 faster, thereby improving the heat dissipation capacity of the power module 10 and effectively reducing the production cost of the power component 100.

[0062] The sintered layer 20 can be made of any of sintered silver, sintered copper, sintered copper-silver, or full IMC solder to reduce the manufacturing cost of the sintered layer 20 and, therefore, the manufacturing cost of the power assembly 100. Preferably, the sintered layer 20 is made of sintered silver, and the specific material can be determined based on heat dissipation requirements and process costs.

[0063] The full-IMC solder includes at least two alloy components with different melting points, each alloy component consisting of one or more of Cu, Sn, Ag, Ni, Bi, In, Sb, Co, Au, Zn, and Cd. For example, the alloy component consists of Cu and Sb, or the alloy component consists of Ag, Bi, and Co. Another example is the alloy component consists of Cu, or the alloy component consists of Sn and Bi. This results in a lower melting point for the full-IMC solder, thereby reducing the sintering temperature. Other combinations of alloy components are also possible, which are not listed here.

[0064] In one embodiment, along the thickness direction of the power component 100, the projected area of ​​the sintered layer 20 is less than or equal to the projected area of ​​the thermally conductive substrate 11. Because the encapsulation body 50 is provided on the outer edge of the thermally conductive substrate 11, the surface of the encapsulation body 50 facing the heat sink 40 is substantially flush with the surface of the thermally conductive substrate 11 facing the heat sink 40. Therefore, pressure must be applied to the sintered layer 20 during sintering. If the projected area of ​​the sintered layer 20 is greater than the projected area of ​​the thermally conductive substrate 11, the portion of the sintered layer 20 that extends beyond the thermally conductive substrate 11 will squeeze the encapsulation body 50, damaging the seal of the encapsulation body 50 with the power module 10. If the projected area of ​​the sintered layer 20 is less than or equal to the projected area of ​​the thermally conductive substrate 11, applying pressure to the sintered layer 20 can reduce squeezing of the encapsulation body 50 and ensure the seal of the encapsulation body 50 with the power module 10.

[0065] For example, the insulating member 30 is placed on the outer edge of the heat sink 40 and then fixed to the heat sink 40 by bolts. The bolts are staggered with respect to the lead terminals 13. For example, along the thickness direction of the power module 100, the projection of the lead terminals 13 and the projection of the bolts are staggered to reduce the impact of the bolts on the electrical insulation of the power module 100. Optionally, the insulating member 30 and the heat sink 40 can also be connected by gluing or fixing with pins, which is not limited to this.

[0066] The insulating member 30 may be made of rubber, resin, plastic or other insulating materials.

[0067] Along the thickness direction of the power component 100, the projection of the insulating member 30 covers the projection of the lead terminal 13 on the heat sink 40, that is, in the thickness direction of the power component 100, the insulating member 30 is arranged between the lead terminal 13 and the outer edge of the heat sink 40, so that the insulating member 30 can separate the lead terminal 13 from the heat sink 40 in the thickness direction of the power component 100, thereby ensuring safety electrical insulation between the lead terminal 13 and the heat sink 40.

[0068] In the thickness direction of the power component 100 , in the portion between the lead terminal 13 and the heat sink 40 where the thermal conductive substrate 11 and the sintered layer 20 are not interposed, the projection of the insulating member 30 covers the projection of the lead terminal 13 on the heat sink 40 .

[0069] In one embodiment, the insulating member 30 has a comparative tracking index (CTI) greater than or equal to 150, a breakdown voltage greater than or equal to 4.2 kV, and a short-term heat resistance temperature greater than or equal to 210° C., ensuring that the insulating member 30 provides safety electrical insulation between the lead terminal 13 and the heat sink 40 .

[0070] The insulating member 30 includes a base plate 31 and a positioning portion 32. One end of the positioning portion 32 is connected to the base plate 31, and the other end of the positioning portion 32 extends away from the base plate 31. Positioning portions 32 are fixedly connected to opposite ends of the base plate 31. The positioning portions 32 are integrated with the base plate 31, simplifying the installation process of the base plate 31 and the positioning portion 32. The base plate 31 and the lead terminal 13 are arranged opposite each other in the thickness direction of the power module 100. The positioning portion 32 and the base plate 31 enclose a receiving groove 34, which accommodates the sintered layer 20 and at least a portion of the power module 10.

[0071] In the thickness direction of the power component 100, the projection of the bottom plate 31 is larger than the projection of the heat sink 40, so that the lead terminal 13 and the heat sink 40 are isolated by the bottom plate 31, ensuring electrical insulation between the lead terminal 13 and the heat sink 40. Optionally, in the thickness direction of the power component 100, the projection of the bottom plate 31 is equal to the projection of the heat sink 40, reducing the space occupied by the bottom plate 31.

[0072] A through hole 33 is formed on the bottom plate 31 , and a portion of the heat sink 40 passes through the through hole 33 and is connected to the sintered layer 20 in the receiving groove 34 .

[0073] The positioning portion 32 is protruded on the surface of the base plate 31 facing the power module 10. The distance that the positioning portion 32 extends along the thickness direction of the power component 100 is less than the height of the power module 10 extended along the thickness direction. During the assembly process of the power component 100, the positioning portion 32 plays a role in positioning the power module 10 and the sintered layer 20, reducing the installation accuracy, thereby improving the installation efficiency of the power component 100 and the heat sink 40.

[0074] It can be understood that the package body 50 wraps the power module 10 , and at least a portion of the package body 50 is located in the receiving groove 34 , so that the insulating member 30 as a whole positions the package body 50 and the power module 10 in the package body 50 .

[0075] In other embodiments, positioning portions 32 are provided around the outer edge of the bottom plate 31 .

[0076] The heat sink 40 includes a heat dissipation substrate 41, heat dissipation teeth 42, a shell 43 and a boss 44. The boss 44 is protruding from the surface of the heat dissipation substrate 41 facing the power module 10. The setting of the boss 44 increases the electrical distance between the heat dissipation substrate 41 and the power module 10, ensuring electrical insulation between the heat dissipation substrate 41 and the lead terminal 13; the shell 43 is fixedly connected to the surface of the heat dissipation substrate 41 facing away from the power module 10, the heat dissipation teeth 42 are arranged inside the shell 43, and the opposite ends of the heat dissipation teeth 42 are respectively fixed to the heat dissipation substrate 41 and the shell 43. The shell 43, the heat dissipation substrate 41 and the heat dissipation teeth 42 together form a heat dissipation water channel 45. Cooling liquid is passed into the heat dissipation water channel 45 to achieve heat dissipation of the power module 10; the heat dissipation substrate 41, the heat dissipation teeth 42 and the shell 43 can be connected by brazing to form a whole with a complete heat dissipation water channel 45. There is no need to set a sealing ring between the heat dissipation substrate 41 and the shell 43 to avoid the problem of sealing ring leakage during long-term use.

[0077] The boss 44 is integrated with the heat dissipation substrate 41 , which saves the process of installing the boss 44 to the heat dissipation substrate 41 .

[0078] The sintered layer 20 is fixedly connected between the boss 44 and the thermally conductive substrate 11, and the power module 10 is connected to the boss 44 via the sintered layer 20. A base plate 31 is provided on the surface of the heat dissipation substrate 41 facing the power module 10. The base plate 31 is sleeved on the sidewall of the boss 44. The boss 44 penetrates through the through hole 33 of the base plate 31 and connects to the sintered layer 20 in the receiving groove 34. The base plates 31 are located on opposite sides of the boss 44. The base plates 31 on opposite sides of the boss 44 are arranged opposite to at least one lead terminal 13 in the thickness direction of the power component 100. The base plate 31 can electrically insulate the portion of the heat dissipation substrate 41 not provided with the boss 44 from the lead terminal 13.

[0079] When the sintered layer 20 is sintered to the boss 44 , the sintering pressure of the sintered surface is more uniform. Compared with connecting the surface of the heat dissipation substrate 41 facing the power module 10 to the sintered layer 20 , the flatness of the sintered surface of the boss 44 is easier to control.

[0080] Please refer to Figures 3 and 4. The outer edge of the boss 44 is provided with a chamfer 441. When the boss 44 is connected to the sintered layer 20, the excess sintered layer 20 can flow from the chamfer 441 to the side of the boss 44, preventing the excess sintered layer 20 from flowing toward the power module 10, reducing the impact of the sintering connection on the power module 10, and the setting of the chamfer 441 makes the weld at the edge after the boss 44 is connected to the sintered layer 20 thicker, thereby improving the reliability of the connection between the boss 44 and the sintered layer 20.

[0081] In addition, if the boss 44 is directly connected and fixed to the thermally conductive substrate 11 , such as by welding, the chamfer 441 of the boss 44 can effectively prevent excess solder from flowing toward the power module 10 , thereby reducing the impact of welding on the power module 10 .

[0082] In one embodiment, the thickness of the insulating member 30 is less than the height of the boss 44 along the alignment direction of the heat dissipation substrate 41 and the boss 44. Specifically, the thickness of the base plate 31 is less than the height of the boss 44, allowing a portion of the boss 44 to extend into the receiving groove 34, facilitating connection between the surface of the boss 44 facing the power module 10 and the sintered layer 20 within the receiving groove 34.

[0083] In one embodiment, along the arrangement direction of the heat dissipation substrate 41 and the boss 44, the height of the boss 44 is greater than or equal to 0.5 mm and less than or equal to 5 mm. For example, the height of the boss 44 is recorded as H2, and the value of the height H2 of the boss 44 can be 0.5 mm, 0.8 mm, 1.5 mm, 2.0 mm, 2.5 mm, 3.1 mm, 3.7 mm, 4.3 mm, 4.8 mm or 5.0 mm, not listed one by one.

[0084] If the height of the boss 44 is less than 0.5 mm, the height of the boss 44 is too small, which increases the difficulty of processing, and the small height of the boss 44 easily leads to low connection reliability after sintering; if the height of the boss 44 is greater than 5 mm, the height of the boss 44 is too large, resulting in an increase in the thermal resistance between the heat dissipation substrate 41 and the power module 10; in this application, the height of the boss 44 is set to be greater than or equal to 0.5 mm and less than or equal to 5 mm, reducing the impact of the height of the boss 44 on the difficulty of processing, and is beneficial to improving the reliability of the connection between the boss 44 and the sintered layer 20, and reducing the impact of the excessive height of the boss 44 on the thermal resistance between the heat dissipation substrate 41 and the power module 10.

[0085] The surface of the boss 44 may be provided with a plating layer. Specifically, the plating layer may be applied to the surface of the boss 44 by chemical plating or electroplating. The plating layer material may be any one of Sn, Ag or Au.

[0086] In one embodiment, along the thickness direction of the power component 100 , the projected area of ​​the boss 44 is smaller than or equal to the projected area of ​​the thermal conductive substrate 11 .

[0087] An encapsulation body 50 is provided at the outer edge of the thermally conductive substrate 11. The surface of the encapsulation body 50 facing the heat sink 40 is substantially on the same surface as the surface of the thermally conductive substrate 11 facing the heat sink 40. When the boss 44 is directly connected and fixed to the thermally conductive substrate 11, if the projected area of ​​the boss 44 is larger than the projected area of ​​the thermally conductive substrate 11, the portion of the boss 44 that extends beyond the thermally conductive substrate 11 will squeeze the encapsulation body 50, thereby destroying the sealing of the encapsulation body 50 on the power module 10. When the projected area of ​​the boss 44 is less than or equal to the projected area of ​​the thermally conductive substrate 11, the boss 44, when directly connected to the thermally conductive substrate 11, can reduce the squeezing of the encapsulation body 50, thereby ensuring the sealing of the encapsulation body 50 on the power module 10.

[0088] A protrusion 51 is formed on the outer edge of the package body 50 , and the lead terminal 13 extends from the protrusion 51 . The lead terminal 13 is at a certain distance from the edge of the protrusion 51 at the extending position of the protrusion 51 .

[0089] Please refer to Figure 5, which is a schematic diagram of the structure of a power component 100 with another single-sided heat dissipation structure provided in one embodiment of the present application. In one embodiment, along the arrangement direction of the boss 44 and the base plate 31, the protrusion 51 is provided along the side facing away from the boss 44, and the spacing between the boss 44 and the base plate 31 is less than or equal to the length of the protrusion 51 provided along the side facing away from the boss 44. For example, along the arrangement direction of the boss 44 and the base plate 31, the spacing between the boss 44 and the base plate 31 is denoted as L1, and the length of the protrusion 51 provided along the side facing away from the boss 44 is denoted as L2, as shown in Figure 5.

[0090] Among them, along the arrangement direction of the boss 44 and the base plate 31, the distance L1 between the boss 44 and the base plate 31 is: the distance between the surface of the base plate 31 facing the boss 44 and the outer peripheral surface of the boss 44 facing the base plate 31; the length L2 of the protrusion 51 protruding along the side away from the boss 44 is: the distance the protrusion 51 protrudes relative to the outer peripheral surface of the boss 44 facing the base plate 31.

[0091] When the distance L1 between the boss 44 and the base plate 31 is equal to the length L2 of the protrusion 51 along the side away from the boss 44, the protrusion 51 and the base plate 31 together realize electrical insulation of the lead terminal 13 and the heat sink 40, and in the thickness direction of the power component 100, the projection of the base plate 31 on the heat sink 40 and the projection of the protrusion 51 with a length of L2 on the heat sink 40 will not overlap, thereby reducing the setting of the base plate 31 and effectively reducing the production cost.

[0092] When the distance L1 between the boss 44 and the base plate 31 is less than the length L2 of the protrusion 51 along the side away from the boss 44, as shown in FIG3 , the surface of the base plate 31 facing the boss 44 is in contact with the outer peripheral surface of the boss 44. In the thickness direction of the power component 100, the projection of the base plate 31 on the heat sink 40 partially overlaps with the projection of the protrusion 51 with a length of L2 on the heat sink 40, so as to further enhance the electrical insulation performance between the lead terminal 13 and the heat sink 40.

[0093] The positioning portion 32 on the outer edge of the insulating member 30 surrounds the protruding portion 51 , so that the positioning portion 32 can better position the entire package body 50 .

[0094] Please refer to Figure 6, which is a schematic diagram of the structure of a power component 100 with a single-sided heat dissipation structure provided in an embodiment of the present application. The power component 100 includes a power module 10, a sintered layer 20, an insulating member 30, a heat sink 40 and a package body 50. There are multiple power modules 10, each of which is packaged by a package body 50. Each power module 10 includes a thermally conductive substrate 11, a chip 12 and a lead terminal 13 (as shown in Figure 3). Each power module 10 is connected to a corresponding boss 44 through a sintered layer 20, wherein multiple bosses 44 are arranged at intervals on the heat dissipation substrate 41, specifically determined according to the position of the thermally conductive substrate 11 on the power module 10. A positioning portion 32 is provided between two adjacent power modules 10, so that the power module 10 is positioned by the positioning portion 32.

[0095] In this embodiment, the structures of the power module 10, the sintered layer 20, and the package body 50 are the same as the structures of the corresponding power module 10, the sintered layer 20, and the package body 50 in the power module 10 shown in Figure 3 or Figure 5, and are not repeated here. The structure of the heat sink 40 is similar to the structure of the heat sink 40 shown in Figure 3 or Figure 5, except that: a plurality of bosses 44 are provided on the heat dissipation substrate 41; the structure of the insulating member 30 is similar to the structure of the insulating member 30 shown in Figure 3, except that: a plurality of positioning portions 32 and a plurality of through holes 33 are spaced apart on the bottom plate 31, and the number of through holes 33 is the same as the number of the power module 10.

[0096] Please refer to Figure 7, which is a schematic diagram of a power component 100 with a double-sided heat dissipation structure according to one embodiment of the present application. As shown in Figure 7, power component 100 includes a power module 10, a sintered layer 20, an insulating member 30, a heat sink 40, and a package 50. In this embodiment, there is only one power module 10.

[0097] Among them, the power module 10 includes a first thermally conductive substrate 11a, a second thermally conductive substrate 11b, a chip 12, a lead terminal 13 and an interconnection column 14. In the thickness direction of the power component 100, the first thermally conductive substrate 11a and the second thermally conductive substrate 11b are arranged on opposite sides of the chip 12. The first thermally conductive substrate 11a is connected and fixed to the chip 12, and the second thermally conductive substrate 11b is connected and fixed to the chip 12 through the interconnection column 14. The interconnection column 14 plays the role of heat conduction and stress buffering. The lead terminal 13 is connected to the first thermally conductive substrate 11a or the second thermally conductive substrate 11b. The power module 10 is dissipated through the first thermally conductive substrate 11a and the second thermally conductive substrate 11b, thereby improving the heat dissipation capacity and heat dissipation efficiency of the power module 10.

[0098] The heat-conducting substrate 11 includes a first heat-conducting substrate 11a and a second heat-conducting substrate 11b. The first heat-conducting substrate 11a and the second heat-conducting substrate 11b have the same structure. The first heat-conducting substrate 11a or the second heat-conducting substrate 11b is connected to the boss 44 in the heat sink 40 through the sintered layer 20. That is, the heat sink 40 is only provided on one side of the power module 10. The heat sink 40 is used to dissipate heat on one side of the power module 10, and the first heat-conducting substrate 11a or the second heat-conducting substrate 11b is used to dissipate heat on the other side of the power module 10. For example, the first heat-conducting substrate 11a is connected to the boss 44 in the heat sink 40. The over-sintered layer 20 is connected to the boss 44, the first thermally conductive substrate 11a is liquid-cooled with the sintered layer 20 and the radiator 40, and the second thermally conductive substrate 11b is cooled with the air outside the power component 100. The heat generated by the power module 10 is conducted to the outside of the power component 100 through the first thermally conductive substrate 11a, the sintered layer 20, and the radiator 40. At the same time, the heat is directly conducted to the outside of the power component 100 through the second thermally conductive substrate 11b, thereby increasing the heat exchange between the second thermally conductive substrate 11b and the air, and further improving the heat dissipation capacity and heat dissipation efficiency of the power module 10.

[0099] It can be understood that when the first thermally conductive substrate 11a is connected to the heat sink 40, the surface of the first thermally conductive substrate 11a facing away from the second thermally conductive substrate 11b is exposed to the package body 50, and the surface of the second thermally conductive substrate 11b facing away from the first thermally conductive substrate 11a may be exposed to the package body 50 or may not be exposed to the package body 50. Preferably, the surface of the second thermally conductive substrate 11b facing away from the first thermally conductive substrate 11a is exposed to the package body 50, so that the heat conducted through the second thermally conductive substrate 11b is conducted to the outside of the power component 100 more quickly, and the possibility of the second thermally conductive substrate 11b damaging the package body 50 is reduced.

[0100] Please refer to Figure 8, which is a schematic structural diagram of a power component 100 with another double-sided heat dissipation structure provided by an embodiment of the present application. As shown in Figure 8, the power component 100 includes a power module 10, a sintered layer 20, an insulating member 30, a heat sink 40 and a packaging body 50. Among them, the sintered layer 20 includes a first sintered layer 20a and a second sintered layer 20b, the heat sink 40 includes a first heat sink 40a and a second heat sink 40b, the insulating member 30 includes a first insulating member 30a and a second insulating member 30b, the first heat sink 40a and the second heat sink 40b are arranged on opposite sides of the power module 10, the first heat sink 40a is connected to one surface of the power module 10 through the first sintered layer 20a, and the second heat sink 40b is connected to the other side of the power module 10 through the second sintered layer 20b. A first heat sink 40a and a second heat sink 40b are provided on opposite sides of the power module 10, respectively, improving the heat dissipation efficiency and capacity of the power module 10. No additional screws are required to secure the first heat sink 40a and the power module 10, or the second heat sink 40b and the power module 10, simplifying the installation process. The power module 10 is integrated with the first and second heat sinks 40a, 40b, respectively, reducing interfacial thermal resistance and improving the heat dissipation capacity of the power module 10. A first insulating member 30a is provided on the surface of the first heat sink 40a facing the power module 10, and a second insulating member 30b is provided on the surface of the second heat sink 40b facing the power module 10, thereby achieving electrical insulation between the first heat sink 40a and the power module 10, and between the second heat sink 40b and the power module 10.

[0101] As shown in FIG8 , in this embodiment, the number of the power module 10 is one.

[0102] In this embodiment, the structure of the power module 10 is the same as the structure of the power module 10 shown in Figure 7, both of which include a first thermally conductive substrate 11a and a second thermally conductive substrate 11b. The first thermally conductive substrate 11a is connected and fixed to the first heat sink 40a through the first sintered layer 20a. The difference is that the second thermally conductive substrate 11b is connected to the second heat sink 40b through the second sintered layer 20b, and the heat dissipation capacity and heat dissipation efficiency of the power module 10 are further improved through the second heat sink 40b.

[0103] It can be understood that the structure of the first heat sink 40a is the same as that of the second heat sink 40b, and the specific structure is the same as the heat sink structure of the power component 100 shown in Figure 1. The first heat sink 40a includes a first boss 44a, and the second heat sink 40b includes a second boss 44b. The first boss 44a is connected and fixed to the first thermal conductive substrate 11a through the first sintered layer 20a, and the second boss 44b is connected and fixed to the second thermal conductive substrate 11b through the second sintered layer 20b, thereby increasing the electrical distance between the first heat sink 40a and the power module 10, and between the second heat sink 40b and the power module 10, thereby ensuring electrical insulation between the first heat sink 40a and the lead terminal 13, and between the second heat sink 40b and the lead terminal 13.

[0104] The first sintered layer 20a and the second sintered layer 20b may be made of the same material or different materials. The first sintered layer 20a and the second sintered layer 20b may be sintered simultaneously or in steps.

[0105] The materials used to make the first insulating member 30a and the second insulating member 30b can be the same or different, and there is no specific limitation. The structure of the first insulating member 30a is the same as that of the insulating member 30 in the power assembly 100 shown in Figure 1. Both are provided with a base plate 31 and a positioning portion 32, and the positioning portion 32 is located on opposite sides of the power module 10. Among them, the second insulating member 30b is arranged opposite to the first insulating member 30a. The second insulating member 30b only includes the base plate 31. The base plate 31 of the second insulating member 30b electrically insulates the second heat sink 40b and the lead terminal 13 of the power module 10. There is no need to position the power module 10 through the second insulating member 30b, which reduces the manufacturing cost of the second insulating member 30b.

[0106] Please refer to Figure 9, which is a schematic diagram of the structure of a power component 100 with a double-sided heat dissipation structure provided by an embodiment of the present application. As shown in Figure 9, the power component 100 includes a power module 10, a first sintered layer 20a, a second sintered layer 20b, a first insulating member 30a, a second insulating member 30b, a first heat sink 40a, a second heat sink 40b and a package body 50. There are multiple power modules 10, and each power module 10 is packaged by a package body 50. Each power module 10 includes a first heat-conducting substrate 11a, a second heat-conducting substrate 11b, a chip 12, a lead terminal 13 and an interconnection column 14. The chip 12 and the lead terminal 13 (as shown in Figure 8) are fixedly connected to the first heat-conducting substrate 11a. The interconnection column 14 connects the chip 12 and the second heat-conducting substrate 11b. In each power module 10, the first heat-conducting substrate 11a is connected to the second heat-conducting substrate 11b. The substrate 11a is connected to a first boss 44a through a first sintered layer 20a, wherein multiple first bosses 44a are arranged at intervals on the first heat dissipation substrate 41a, specifically determined according to the position of the first thermally conductive substrate 11a on the power module 10; the second thermally conductive substrate 11b is connected to a second boss 44b through a second sintered layer 20b, wherein multiple second bosses 44b are arranged at intervals on the second heat dissipation substrate 41b, specifically determined according to the position of the second thermally conductive substrate 11b on the power module 10, and a positioning portion 32 on the first insulating member 30a is provided between two adjacent power modules 10, so that the power module 10 is positioned by the positioning portion 32 on the first insulating member 30a.

[0107] In this embodiment, the structures of the power module 10, the first sintered layer 20a, the second sintered layer 20b, and the package body 50 are the same as the structures of the corresponding power module 10, the first sintered layer 20a, the second sintered layer 20b, and the package body 50 in the power component 100 shown in Figure 8, and are not repeated here. The structures of the first heat sink 40a and the second heat sink 40b are similar to the structures of the corresponding first heat sink 40a and the second heat sink 40b shown in Figure 7, except that: a plurality of first bosses 44a are provided on the first heat dissipation substrate 41a, and a plurality of second bosses 44b are provided on the second heat dissipation substrate 41b; the structures of the first insulating member 30a and the second insulating member 30b are similar to the structures of the corresponding first insulating member 30a and the second insulating member 30b shown in Figure 8, except that: a plurality of through holes 33 are provided on the bottom plate 31 of the first insulating member 30a and the second insulating member 30b at intervals, and the number of through holes 33 is the same as the number of the power module 10, wherein a plurality of positioning portions 32 are provided at intervals on the first insulating member 30a.

[0108] The manufacturing method of the power component 100 provided in this application is as follows:

[0109] A coating is provided on the surface of the heat-conducting substrate 11 facing the heat sink 40 and the surface of the boss 44 facing the power module 10 by chemical plating or electroplating; the heat sink 40 is positioned by using a special sintering mold lower mold or a jig, and the insulating member 30 is placed on the heat-dissipating substrate 41 along the outer edge of the boss 44; a sintering layer 20 is applied on the heat-conducting substrate 11 or the boss 44 by using a steel screen printing or equipment spraying / dot coating method, and the sintering layer 20 can be pre-dried after application; then, the power module 10 is placed, and The power module 10 is positioned using the insulating part 30 to prevent the thermal conductive substrate 11 of the power module 10 from shifting relative to the boss 44. The upper mold of the sintering mold or the pressure jig is placed, and sintering is performed in a dedicated device, wherein the sintering temperature is less than or equal to 230°C, and the sintering pressure is less than or equal to 15 MPa. The sintering temperature is set to be less than or equal to 230°C to reduce thermal damage to the power module 10. The sintering pressure is less than or equal to 15 MPa to reduce the pressure on the thermal conductive substrate 11 during sintering pressure, thereby reducing the risk of cracking inside the thermal conductive substrate 11.

[0110] It is understood that the pre-drying treatment may not be performed after the sintered layer 20 is applied, and the specific treatment may be determined according to the material of the sintered layer and the process conditions.

[0111] In the motor controller 210 in the present application, the power component 100 provided in the present application is adopted. Since the power component 100 has better electrical insulation performance and better heat dissipation capability, the motor controller 210 can have a higher current output capability at the same voltage, thereby improving the power conversion efficiency of the motor controller 210; since the power module 10 is integrated with the radiator through the sintering layer, the size of the motor controller 210 can be reduced accordingly, thereby improving the power density of the motor controller 210.

[0112] In the powertrain 200 of the present application, the motor controller 210 provided in the present application is adopted. Since the motor controller 210 has a higher current output capability and is smaller in size and weight, the output power and power density of the powertrain 200 can be improved, and higher electrical energy can be provided to the motor 220, so that the motor 220 can output higher kinetic energy, and the powertrain 200 has a higher driving force.

[0113] In the vehicle 1000 of the present application, the powertrain 200 provided in the present application is adopted. Since the powertrain 200 can provide higher driving force, the vehicle 1000 has higher power, thereby providing a better driving experience for the driver.

[0114] In this application, unless otherwise specified or limited, the terms "connection" and "fixation" should be understood in a broad sense. For example, "fixation" can mean fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0115] The first, second and various numerical numbers involved in this document are only for the convenience of description and are not intended to limit the scope of this application.

[0116] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0117] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A power component, characterized in that, The power component includes a power module, a heat sink, and an insulator; the power module includes lead terminals, the insulator is disposed on a surface of the heat sink facing the power module, and in the thickness direction of the power component, the projection of the insulator covers the projection of the lead terminals on the heat sink.

2. The power component according to claim 1, wherein The insulator includes a bottom plate and a positioning portion, one end of the positioning portion is connected to the bottom plate, the other end of the positioning portion extends in a direction away from the bottom plate, and the bottom plate is disposed opposite to the lead terminals in the thickness direction of the power component; The positioning portion and the bottom plate enclose a receiving groove, and at least part of the power module is received in the receiving groove.

3. The power component according to claim 2, characterized in that, The heat sink includes a heat dissipation substrate and a boss, the boss protrudes from a surface of the heat dissipation substrate facing the power module, and the bottom plate is disposed on a surface of the heat dissipation substrate facing the power module and on opposite sides of the boss.

4. The power component according to claim 3, wherein, In the arrangement direction of the heat dissipation substrate and the boss, the thickness of the insulator is less than the height of the boss.

5. The power component according to claim 3 or 4, characterized in that, The power component further includes a sintered layer, the sintered layer is fixedly connected between the boss and the power module, and the sintered layer is received in the receiving groove.

6. The power component according to claim 5, wherein The power component further includes a package body, the package body wraps the power module, and at least part of the package body is located in the receiving groove.

7. The power component according to claim 6, wherein A protruding portion is formed on an outer edge of the package body; in the arrangement direction of the boss and the bottom plate, the protruding portion protrudes from a side away from the boss, and the distance between the boss and the bottom plate is less than or equal to the length of the protruding portion protruding from the side away from the boss.

8. The power component according to claim 6 or 7, characterized in that, The power module includes a chip and a heat conduction substrate, the chip is disposed on a side of the heat conduction substrate away from the heat sink, a surface of the heat conduction substrate facing the sintered layer is exposed from the package body, and the sintered layer is fixedly connected between the heat conduction substrate and the boss.

9. The power component according to claim 8, characterized in that In the thickness direction of the power component, the projected area of the boss is less than or equal to the projected area of the heat conduction substrate.

10. The power component according to claim 8 or 9, characterized in that, The heat conduction substrate includes a first heat conduction layer, a heat conduction insulating layer, and a second heat conduction layer which are sequentially stacked, and the material of the heat conduction insulating layer includes a heat conduction insulating sheet or a heat conduction insulating film.

11. The power component according to any one of claims 8-10, characterized in that, The heat conduction substrate includes a first heat conduction substrate and a second heat conduction substrate, the first heat conduction substrate and the second heat conduction substrate are respectively disposed on opposite sides of the chip, and the first heat conduction substrate and / or the second heat conduction substrate are connected to the boss through the sintered layer.

12. The power component according to claim 11, characterized in that, The radiator includes a first radiator and a second radiator. The first radiator includes a first heat dissipation substrate and a first boss. The second radiator includes a second heat dissipation substrate and a second boss. The first heat dissipation substrate and the second heat dissipation substrate are located on two opposite sides of the chip. The first boss protrudes from the surface of the first heat dissipation substrate facing the chip, and the second boss protrudes from the surface of the second heat dissipation substrate facing the chip. The sintered layer includes a first sintered layer and a second sintered layer. The first sintered layer is fixed between the first boss and the first heat conduction substrate, and the second sintered layer is fixed between the second boss and the second heat conduction substrate.

13. The power component according to claim 12, characterized in that, The insulating member includes a first insulating member and a second insulating member. The first insulating member is disposed on the surface of the first radiator facing the second radiator, and the second insulating member is disposed on the surface of the second radiator facing the first radiator. The first insulating member or the second insulating member includes a bottom plate and a positioning portion.

14. The power component according to any one of claims 3-13, characterized in that, A chamfer is provided on the outer edge of the boss.

15. A motor controller, characterized in that, It includes a capacitor and a power component as described in any one of claims 1-14. The lead-out terminal of the power module is connected to the heat conduction substrate of the power module. The capacitor is connected to the power module through the lead-out terminal, and the capacitor is used to provide voltage for the power module.

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