Substrate processing device and substrate processing method

Abstract

A substrate processing device that performs radical processing on a substrate includes: a chamber that serves to accommodate the substrate and has a main body section and a top wall section; a stage that supports the substrate in the chamber; a microwave source that is provided above the top wall section and supplies microwaves into the chamber; a gas supply section that supplies a processing gas for generating plasma by means of the microwaves to the area directly below the top wall section in the chamber; and a coolant supply section that includes a coolant flow path formed in the top wall section and a coolant supply source for supplying a coolant to the coolant flow path, and that allows a coolant for cooling the top wall section to a temperature at which it is possible to suppress the deactivation of radicals in the plasma to flow through the coolant flow path. The substrate processing device performs radical processing on the substrate by means of radicals in the plasma generated in the chamber by the microwaves.

Description

Substrate processing apparatus and substrate processing method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] In a process for forming Cu wiring, a technique is known in which, prior to the formation of a Cu film that will become the wiring, a metal oxide film present on a semiconductor wafer or etching residues generated in a previous process are cleaned and removed using hydrogen radicals (e.g., Patent Documents 1 and 2).

[0003] Furthermore, Patent Document 3 discloses a method for cleaning a plasma processing apparatus in which microwaves are introduced into a chamber through an alumina transmission window and a substrate is processed with plasma of a processing gas. After plasma processing with a fluorine-containing gas, a rare gas and H ２ A technique for performing treatment using gas plasma has been disclosed.

[0004] JP 2015-177119 A International Publication No. 2012 / 173067 JP 2022-191960 A

[0005] The present disclosure provides a substrate processing apparatus and a substrate processing method that can supply a sufficient amount of radicals to a substrate while suppressing plasma damage to the substrate when performing radical processing on the substrate using microwave plasma.

[0006] A substrate processing apparatus according to one aspect of the present disclosure is a substrate processing apparatus that performs radical processing on a substrate, the substrate processing apparatus having a main body and a ceiling wall, a chamber that accommodates a substrate, a stage that supports the substrate within the chamber, a microwave source provided above the ceiling wall that supplies microwaves into the chamber, a gas supply unit that supplies a processing gas for generating microwave plasma to a region directly below the ceiling wall within the chamber, a coolant flow path formed in the ceiling wall, and a coolant supply source that supplies a coolant to the coolant flow path, and a coolant supply unit that passes a coolant through the coolant flow path to cool the ceiling wall to a temperature that can suppress deactivation of radicals in the plasma, and the substrate is subjected to radical processing using radicals in the plasma generated in the chamber by the microwaves.

[0007] According to the present disclosure, there is provided a substrate processing apparatus and a substrate processing method that can supply a sufficient amount of radicals to a substrate while suppressing plasma damage to the substrate when performing radical processing on the substrate using microwave plasma.

[0008] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment. FIG. 2 is a block diagram showing an example of a microwave source of the substrate processing apparatus of FIG. 1. FIG. 3 is a diagram showing a schematic view of plasma density when surface wave plasma is generated using microwaves. FIG. 4 is a diagram showing the relationship between temperature in quartz and radical deactivation coefficient γ of hydrogen radicals. FIG. 5 is a schematic view showing an example of a pattern of coolant flow channels formed in a ceiling wall portion. FIG. 6 is a schematic view showing another example of a pattern of coolant flow channels formed in a ceiling wall portion. FIG. 7 is a schematic view showing yet another example of a pattern of coolant flow channels formed in a ceiling wall portion. FIG. 8 is a cross-sectional view showing a first modified example of the substrate processing apparatus. FIG. 9 is a cross-sectional view showing a second modified example of the substrate processing apparatus.

[0009] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. <Configuration of Substrate Processing Apparatus> Figure 1 is a cross-sectional view showing a substrate processing apparatus according to one embodiment. The substrate processing apparatus 100 performs hydrogen radical processing, e.g., cleaning processing, on a substrate W such as a semiconductor wafer, and generates surface wave plasma using microwaves. The substrate processing apparatus 100 has a chamber 1, a microwave source 2, a gas supply unit 3, an exhaust unit 4, and a coolant supply unit 5.

[0010] The chamber 1 is generally cylindrical, made of a metal material such as aluminum or stainless steel, and is protectively grounded. The chamber 1 has a main body 1a with an opening at the top, and a ceiling wall (lid) 1b that is provided to close the opening of the main body 1a, and is configured airtight, forming a processing space S inside. If the surfaces of the chamber 1, including the ceiling wall (lid) 1b, are made of aluminum, an anodized film (Al) is applied to the surface to prevent arcing. ２ O ３ Furthermore, an alumina (Al film) may be formed on the surface of the chamber 1 including the ceiling wall (lid) 1b. ２ O ３ ), yttria (Y ２ O ３), quartz (silica; SiO ２ ) or the like may be formed on the surface of the substrate.

[0011] A stage 11, which is a support member for horizontally supporting a substrate W, is provided in the processing space S within the chamber 1, and is supported by a cylindrical support member 12 that is erected in the center of the bottom of the chamber 1. Examples of materials that can be used to form the stage 11 and the support member 12 include aluminum with an anodized surface. An electrostatic chuck for attracting the substrate W is provided on the surface of the stage 11. The stage 11 may include a heater therein for heating the substrate W on the stage 11 to a desired temperature. The heating temperature of the stage 11 is, for example, 150 to 400°C, but is not limited to this.

[0012] A stepped cylindrical opening 13 is formed in the center of the top wall 1b of the chamber 1, and a microwave-transmitting plate 14 made of a dielectric material such as quartz is fitted into the large-diameter portion at the top of the opening 13. A first insulating member 15 is interposed between the main body 1a and the top wall (lid) 1b, and the sides and top of the top wall (lid) 1b are covered with a second insulating member 16. The first insulating member 15 and the second insulating member 16 are made of, for example, ceramics. The first insulating member 15 is provided to insulate heat from the main body 1a of the chamber 1 to the top wall (lid) 1b. The second insulating member 16 is provided to prevent condensation on the top wall (lid) 1b, which is cooled by a refrigerant. The top wall 1b, the first insulating member 15, and the second insulating member 16 are attached to the main body 1a with plastic screws 17.

[0013] The microwave source 2 radiates microwaves and is provided above the top wall (lid) 1b at a position corresponding to the microwave transmitting plate 14. The microwaves radiated from the microwave source 2 are transmitted through the microwave transmitting plate 14 and supplied to the processing space S within the chamber 1. Details of the microwave source 2 will be described later.

[0014] The gas supply unit 3 supplies a gas for hydrogen radical treatment. ２Gases can be used. ２ The gas may be a single gas, but H ２ Alternatively, a gas containing Ar and a rare gas (e.g., Ar gas) may be used. The rare gas, such as Ar gas, functions as a plasma generating gas. In the example of FIG. 1, the gas supply unit 3 supplies Ar gas and H ２ The first line 31 for supplying gas and the H ２ The first line 31 passes through the ceiling wall (lid) 1b to a first outlet in the chamber 1 near the microwave transmission plate 14, and delivers Ar gas and H gas from the first outlet into the processing space S. ２ The second line 32 passes through the ceiling wall (lid) 1b to a second outlet port located outside the first outlet port in the chamber 1, and the H gas is discharged from the second outlet port into the processing space S. ２ The gas is discharged.

[0015] The exhaust unit 4 includes an exhaust pipe 41 connected to an exhaust port 18 provided at the bottom of the chamber 1, a valve 42 that adjusts the opening area of ​​the exhaust pipe 41 to adjust the pressure inside the chamber 1, and a vacuum pump 43 that evacuates the chamber 1. The valve 42 may be a pendulum valve. The vacuum pump 43 may be a turbomolecular pump. Alternatively, the chamber 1 and the exhaust pipe 41 may be connected by a thin bypass pipe, and the pressure inside the chamber 1 may be adjusted by a flow rate control valve provided in the bypass pipe with the main valve 42 closed.

[0016] The refrigerant supply unit 5 has a refrigerant supply source 51 that supplies refrigerant to the top wall (lid) 1b, a refrigerant supply pipe 52, a refrigerant return pipe 53, and a refrigerant flow path 54 provided in the top wall (lid) 1b. The refrigerant flows from the refrigerant supply source 51 through the refrigerant supply pipe 52 to the refrigerant flow path 54, and the refrigerant supplied to the refrigerant flow path 54 returns to the refrigerant supply source 51 through the refrigerant return pipe 53. In other words, the refrigerant supply unit 5 circulates and supplies the refrigerant to the refrigerant flow path 54 provided in the top wall (lid) 1b to cool the top wall (lid) 1b. The refrigerant flow path 54 is formed over the entire surface of the top wall (lid) 1b to uniformly cool the top wall (lid) 1b. The coolant cools the top wall (lid) 1b to a temperature that can prevent the deactivation of hydrogen radicals, for example, about 100 to 200 K (-173 to -73°C), and can be, for example, a fluorine-based inert liquid such as Galden (registered trademark) or Fluorinert (registered trademark).

[0017] The substrate processing apparatus 100 further includes a gas replacement box 6 disposed above the chamber 1 so as to enclose an atmospheric region including the outer surface of the ceiling wall (lid) 1b. The gas replacement box 6 is screwed to the chamber 1 and is provided with a gas inlet 61 and an exhaust port 62. An exhaust mechanism (not shown) is connected to the exhaust port 62, and a moisture-free gas, such as N, is introduced from the gas inlet 61 while the gas replacement box 6 is being exhausted. ２ Gas is supplied and the atmosphere in the gas replacement box 6 is replaced with N ２ It is replaced by gas.

[0018] The substrate processing apparatus 100 further includes a control unit 7. The control unit 7 is configured by a computer and includes a main control unit with a CPU, an input device, an output device, a display device, and a storage device (storage medium). The main control unit controls the components of the substrate processing apparatus 100. For example, the main control unit controls the microwave power of the microwave source 2, the gas supply by the gas supply unit 3, the coolant supply by the coolant supply unit 5, the opening degree of the valve 42 of the exhaust unit 4, and the output of the heater in the stage 11. The storage device stores parameters for various processes performed in the substrate processing apparatus 100. The storage device also includes a storage medium that stores programs for controlling processes performed in the substrate processing apparatus 100, i.e., process recipes. The main control unit retrieves a predetermined process recipe stored in the storage medium and causes the substrate processing apparatus 100 to perform a desired process operation based on the process recipe.

[0019] <Microwave Source> Fig. 2 is a block diagram showing an example of the microwave source 2. As shown in Fig. 2, the microwave source 2 has a microwave output unit 21, an amplifier unit 22, and a microwave radiator 23. The microwave output unit 21 generates microwaves and has a microwave power supply and a microwave oscillator. The amplifier unit 22 adjusts the power level of the microwaves. The microwave radiator 23 has a transmission line made of a coaxial tube, a slot antenna provided at the lower end of the transmission line, and a slug tuner provided in the transmission line for matching the impedance of the plasma to the characteristic impedance of the microwave power supply.

[0020] The microwaves fed from the amplifier unit 22 to the transmission line of the microwave radiating unit 23 are transmitted through the transmission line and radiated from the slot of the slot antenna. The microwaves radiated from the slot are transmitted through the microwave transmitting plate 14 and supplied to the processing space S in the chamber 1. The microwaves supplied to the processing space S then generate surface wave plasma in the region directly below the ceiling wall (lid) 1b.

[0021] <Operation of Substrate Processing Apparatus> Next, a description will be given of the operation of the substrate processing apparatus 100. First, the substrate W is carried into the chamber 1 and placed on the stage 11, and the substrate W is electrostatically chucked and heated to a desired temperature by a heater, and the valve 42 of the exhaust unit 4 is adjusted to adjust the pressure inside the chamber 1 to a desired pressure.

[0022] Then, Ar gas as a plasma generating gas is supplied to the region directly below the ceiling wall (lid) 1b in the processing space S in the chamber 1 via the first line 31 of the gas supply unit 3, and microwaves are supplied from the microwave source 2 to the processing space S in the chamber 1 via the microwave transmitting plate 14, thereby igniting plasma. After the plasma is ignited, microwaves radiated from the microwave source 2 and transmitted through the microwave transmitting plate 14 propagate along the surface of the microwave transmitting plate 14 in contact with the plasma, forming surface waves, and generating surface wave plasma from Ar gas in the region directly below the ceiling wall (lid) 1b. Then, at the timing of plasma ignition, H as a processing gas is supplied from the first line 31 and the second line 32. ２ By supplying gas into the chamber 1, H ２ The gas is converted into plasma and hydrogen radicals are generated. ２ Alternatively, the plasma may be ignited by simultaneously supplying gases into the chamber 1, or by using the H gas as the processing gas without using the Ar gas as the plasma generating gas. ２ Alternatively, only gas may be supplied into the chamber 1 to directly ignite the plasma.

[0023] In this embodiment, the hydrogen radicals thus generated are used to process the substrate W. For example, prior to the formation of a Cu film to be used as Cu wiring, a cleaning process is performed to remove a metal oxide film present on the substrate W or etching residues generated in a previous process.

[0024] At this time, a coolant is supplied to the coolant flow path 54 formed in the top wall (lid) 1b, and the top wall (lid) 1b is cooled to a temperature that can suppress the deactivation of hydrogen radicals, for example, about 100 to 200 K (-173 to -73°C). The cooling of the top wall (lid) 1b will be described in detail later.

[0025] After the substrate W has been treated with hydrogen radicals, the gas supply is stopped, the valve 42 is fully opened to evacuate the chamber 1, and when a predetermined degree of vacuum is reached, the substrate W on the stage 11 is removed from the chamber 1.

[0026] <Cooling of the Top Wall (Lid)> Next, cooling of the top wall (lid) 1b will be described in detail. Because the cleaning process using hydrogen radicals as described above utilizes a chemical reaction, in order to improve the efficiency of the cleaning process and increase productivity, it is conceivable to [1] increase the substrate temperature or [2] increase the amount of hydrogen radicals supplied to the substrate W.

[0027] However, with regard to the above [1], if the heating temperature is unnecessarily increased in order to obtain a sufficient reaction rate, it will be necessary to provide a separate process for cooling the substrate after the cleaning process and before the next process, such as a film formation process, which is not preferable from the viewpoints of space required for the cooling device, productivity, etc.

[0028] Therefore, it is practical to increase the amount of hydrogen radicals supplied to the substrate W as described in [2] above. Since microwaves are used in this embodiment, high-density surface wave plasma composed mainly of radicals is generated in the region directly below the top wall (lid) 1b, including the region directly below the microwave-transmitting plate 14 where the microwaves are radiated, and diffuses toward the stage 11. That is, due to the characteristics of surface wave plasma, a region with the highest plasma density (high plasma density region) 81 is formed in the region directly below the top wall (lid) 1b, including the region directly below the microwave-transmitting plate 14 where the microwaves are radiated, as schematically shown in FIG. 3 . Then, below the high plasma density region 81, plasma diffuses from the high plasma density region 81 to form a region with relatively low plasma density (low plasma density region) 82. In the high plasma density region 81, a large amount of radicals are generated, and these radicals diffuse toward the substrate W. However, it is known that radicals are rapidly deactivated when they come into contact with a metal wall, and if the top wall (lid) 1b is made of metal, many radicals will be deactivated on the surface of the top wall (lid) 1b, resulting in an extremely small amount of radicals being supplied to the substrate W on the stage 11. For this reason, the above [2] will not be achieved if things continue as they are.

[0029] A conventional method for suppressing radical deactivation involves coating the chamber surface, including the ceiling wall (lid), with a dielectric material with a low radical deactivation coefficient, such as quartz (silica) or alumina. This embodiment also allows for coating the ceiling wall (lid) 1b with such a material. However, the materials that can be industrially used for coating are limited, and it is difficult for such coatings to sufficiently suppress radical deactivation by simply reducing the radical deactivation coefficient, which is a physical property. Furthermore, while increasing the microwave power can increase the amount of radicals themselves and thus increase the amount of radicals supplied to the substrate W on the stage 11, increasing the microwave power carries the risk of increasing plasma damage to the substrate W.

[0030] Therefore, in this embodiment, a coolant is circulated through a coolant flow path 54 provided in the top wall (lid) 1b of the chamber 1, and the top wall (lid) 1b is cooled to a temperature that can suppress deactivation of hydrogen radicals, for example, about 100 to 200 K (-173 to -73°C). This makes it possible to supply a sufficient amount of hydrogen radicals to the substrate W without increasing plasma damage to the substrate W.

[0031] The radical deactivation coefficient γ is expressed as a function of temperature by the following equation (1) (Materials 2023, 16, 1774 / A Review of Recombination Coefficients of Neutral Oxygen), and decreases exponentially with decreasing temperature. ｓ ) = Ae －Ｂ／Ｔｓ ...(1) (where A and B are parameters that are usually determined experimentally.) And, quartz (SiO ２The relationship between the temperature and the radical deactivation coefficient γ of hydrogen radicals in the lid 1b is shown in Figure 4 (J. Phys. Chem. C 2016, 120, 24137-24147 / Hydrogen Recombination Rates on Silica from Atomic-Scale Calculations). In Figure 4, the solid and dashed lines represent measured values, and the dashed lines represent values ​​obtained by simulation. As shown in Figure 4, the radical deactivation coefficient γ of hydrogen radicals decreases exponentially with decreasing temperature, but begins to increase at temperatures lower than 100 to 125 K (-173 to -148 °C). In other words, the radical deactivation coefficient γ reaches a minimum between 100 and 125 K (-173 to -148 °C). By cooling the top wall (lid) 1b to approximately 100 to 200 K (-173 to -73 °C), the radical deactivation coefficient can be reduced by more than one order of magnitude compared to room temperature. Within this temperature range, the amount of radical deactivation can be minimized by a simple cooling method in which a refrigerant flows through a refrigerant flow path formed in the top wall (lid) 1b, without using a GM refrigerator that cools to extremely low temperatures (below 100K) used in cryopumps, etc. For example, Galden (registered trademark), a fluorine-based inert liquid, is available with a pour point of approximately 176K (-97°C), which makes it possible to cool the temperature of the top wall (lid) 1b to below 200K.

[0032] In Patent Document 3, a cooling water channel 34a is provided in a shield cover body 34 corresponding to a lid for cooling, but this is for the purpose of maintaining the device and is not intended to prevent deactivation of radicals.

[0033] When cooling the top wall (lid) 1b to a desired temperature by passing a refrigerant through the refrigerant flow path 54 in the top wall (lid) 1b, it is preferable to determine the pattern of the refrigerant flow path 54 so that the top wall (lid) 1b can be cooled uniformly, in order to reliably suppress deactivation of hydrogen radicals that pass through the microwave-transmitting plate 14 and are introduced into the chamber 1.

[0034] Examples of such refrigerant flow path 54 patterns are shown in Figures 5, 6, and 7. In the example of Figure 5, two spiral flow paths are combined, one of which spirals from an inlet on the outer periphery to a central portion, and the other spiral flow path is provided between the two spiral flow paths, connected to the first spiral flow path at the central portion, and spirals toward an outlet on the outer periphery. In the example of Figure 6, the flow paths are formed concentrically, with half of the concentric flow path used as an outward flow path with an inlet on the outer periphery and the other half used as a return flow path with an outlet on the outer periphery, with the return flow path and the outward flow path connected at the central portion. In the example of Figure 7, the flow paths are formed concentrically, with an inlet on the outer periphery, and are branched into left and right flows at the outer periphery of the flow path, merge at the central portion, and guided to an outlet on the outer periphery.

[0035] When the top wall (lid) 1b is cooled to a low temperature in this manner, the cooling efficiency deteriorates if the temperature inside the chamber 1 rises due to plasma processing and the top wall (lid) 1b is thermally affected. For this reason, in this embodiment, a first heat insulating member 15 is provided between the main body 1a and the top wall (lid) 1b of the chamber 1 to insulate the heat from the main body 1a to the top wall (lid) 1b and increase the cooling efficiency of the top wall (lid) 1b by the refrigerant.

[0036] Furthermore, when the top wall (lid) 1b is cooled to a low temperature, condensation may occur on the atmospheric side of the top wall (lid) 1b, which may adversely affect processing. For this reason, in this embodiment, the atmospheric side and top surfaces of the top wall (lid) 1b are covered with a second heat insulating member 16 to suppress condensation on the atmospheric side. Furthermore, since condensation may occur due to moisture in the atmosphere if only the second heat insulating member 16 is provided, the atmospheric side portion above the top wall (lid) 1b is enclosed with a gas replacement box 6, and a moisture-free gas, for example, N ２ The air is replaced with gas. This makes it possible to prevent moisture from coming into contact with the top wall (lid) 1b as much as possible, and more completely prevent condensation. In addition, by using plastic screws 17 to fasten the top wall (lid) 1b, etc., condensation on the screws is also prevented.

[0037] <Modifications of the Substrate Processing Apparatus> Next, modifications of the substrate processing apparatus will be described.

[0038] [First Modification] Figure 8 is a cross-sectional view showing a first modification of a substrate processing apparatus. The example shown in Figure 8 is a remote plasma system in which an intermediate section 1c defining a plasma generation space D is provided between a main body section 1a and a ceiling wall section (lid) 1b of a chamber 1, and plasma generated in the plasma generation space D is diffused to a substrate W in a processing space S. Even in this remote plasma system, it is possible to suppress deactivation of hydrogen radicals and supply a sufficient amount of hydrogen radicals to the processing space S.

[0039] [Second Modification] Figure 9 is a cross-sectional view showing a second modification of the substrate processing apparatus. In the example of Figure 9, an ion filter 1d is provided in a portion between the ceiling wall (lid) 1b and the stage 11 in the chamber 1. The ion filter 1d traps ions in the plasma that diffuse from the surface wave plasma formed in the region directly below the ceiling wall (lid) 1b to the substrate W on the stage 11. This makes it possible to selectively supply hydrogen radicals, which are mainly required for processing, to the substrate W, and reduces damage to the substrate W caused by ions.

[0040] Although the embodiments have been described above, the disclosed embodiments should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0041] For example, in the above embodiment, a cleaning process using hydrogen radicals is exemplified as the radical process for the substrate, but the present invention is not limited to this and other radical processes may be used. Furthermore, the microwave source is not limited to that of the above embodiment and may be any device that supplies microwaves into the chamber from the ceiling wall (lid) of the chamber, such as the plasma processing device described in Patent Document 3.

[0042] 1; chamber, 1a; main body, 1b; ceiling wall (lid), 2; microwave source, 3; gas supply unit, 4; exhaust unit, 5; coolant supply unit, 6; gas replacement box, 7; control unit, 11; stage, 14; microwave transmitting plate, 15; first heat insulating member, 16; second heat insulating member, 54; coolant flow path, 100; substrate processing apparatus, S; processing space, W; substrate

Claims

1. A substrate processing apparatus for subjecting a substrate to radical treatment, comprising: a main body portion and a top wall portion; a chamber for accommodating the substrate; a stage for supporting the substrate in the chamber; a microwave source provided above the top wall portion for supplying microwaves into the chamber; a gas supply portion for supplying a processing gas for generating plasma by microwaves in a region immediately below the top wall portion in the chamber; a refrigerant flow path formed in the top wall portion and a refrigerant supply source for supplying refrigerant to the refrigerant flow path, the refrigerant supply portion for flowing a refrigerant for cooling the top wall portion to a temperature capable of suppressing deactivation of radicals in the plasma through the refrigerant flow path; and subjecting the substrate to radical treatment by radicals in the plasma generated in the chamber by the microwaves.

2. The substrate processing apparatus according to claim 1, wherein the radical is a hydrogen radical.

3. The processing gas contains H ２ gas, and the substrate processing apparatus according to claim 2.

4. The processing gas is H ２ The substrate processing apparatus according to claim 3, comprising an H gas and a rare gas.

5. The substrate processing apparatus according to claim 2, wherein the refrigerant cools the top wall portion to a temperature in the range of 100 to 200 K.

6. The substrate processing apparatus according to claim 2, wherein the stage has a heater and is heated to 150 to 400 °C by the heater.

7. The substrate processing apparatus according to any one of claims 1 to 6, further comprising a microwave transmission plate fitted in the top wall portion and transmitting microwaves radiated from the microwave source into the chamber.

8. The substrate processing apparatus according to any one of claims 1 to 6, wherein a dielectric coating is formed on the surface of the top wall portion.

9. The substrate processing apparatus according to any one of claims 1 to 6, further comprising a first heat insulating member interposed between the main body portion and the top wall portion.

10. The substrate processing apparatus according to any one of claims 1 to 6, further comprising a second heat insulating member provided so as to cover an outer portion of the top wall portion.

11. The substrate processing apparatus according to claim 10, further comprising a gas replacement box provided so as to surround an atmospheric region including the outer surface of the top wall portion above the chamber and replacing the internal atmosphere with a gas containing no moisture.

12. The substrate processing apparatus according to any one of claims 1 to 6, further comprising an ion trap provided between the top wall portion and the stage in the chamber.

13. The chamber further has an intermediate portion provided between the main body portion and the top wall portion, which defines a plasma generation space, and the plasma generated in the plasma generation space diffuses to the substrate. The substrate processing apparatus according to any one of claims 1 to 6.

14. The refrigerant flow path formed in the top wall portion is a combination of two spiral flow paths. One spiral flow path extends from the outer peripheral side inlet spirally to the central portion, and the other spiral flow path is provided between the one spiral flow paths, connects to the one spiral flow path at the central portion, and is formed spirally toward the outer peripheral side outlet. The substrate processing apparatus according to any one of claims 1 to 6.

15. The refrigerant flow path formed in the top wall portion is formed concentrically. Half of the refrigerant flow path is used as an outward path portion having an inlet on the outer peripheral side, and the remaining half is used as a return path portion having an outlet on the outer peripheral side, and the return path portion and the outward path portion are formed to be connected at the central portion. The substrate processing apparatus according to any one of claims 1 to 6.

16. The refrigerant flow path formed in the top wall portion is formed concentrically, has an inlet on the outer peripheral side, is branched left and right in the outer peripheral side portion of the refrigerant flow path from the inlet, and is merged at the central portion and guided to the outer peripheral side outlet. The substrate processing apparatus according to any one of claims 1 to 6.

17. A substrate processing method for performing radical processing on a substrate, comprising: preparing a substrate processing apparatus having a main body portion and a top wall portion formed with a refrigerant flow path, a chamber for accommodating a substrate, a stage for supporting the substrate in the chamber, a microwave source provided above the top wall portion for supplying microwaves into the chamber, and a gas supply portion for supplying a processing gas for generating plasma by microwaves in a region immediately below the top wall portion in the chamber; placing a substrate on the stage; supplying the processing gas from the gas supply portion to the region immediately below the top wall portion in the chamber; supplying microwaves from the microwave source into the chamber to generate plasma in the region immediately below the top wall portion; and flowing a refrigerant through the refrigerant flow path to cool the top wall portion to a temperature capable of suppressing deactivation of radicals in the plasma.

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