Polishing solution and polishing method

Abstract

A polishing solution according to the prevent invention contains: abrasive grains; at least one monocarboxylic acid compound selected from the group consisting of monocarboxylic acids having a nitrogen-containing heterocycle and salts of the monocarboxylic acids; and a nitrogen-containing compound (excluding compounds corresponding to the monocarboxylic acid compound) having a hydrogen atom bonded to a nitrogen atom. The abrasive grains include cerium-based particles. The topological polar surface area of the monocarboxylic acid compound is 80.0 Å2 or less. This polishing method includes a step for using the polishing solution to polish a to-be-polished surface of a to-be polished member.

Description

Polishing liquid and polishing method

[0001] The present disclosure relates to a polishing liquid, a polishing method, and the like.

[0002] In the field of semiconductor manufacturing, as the performance of VLSI devices improves, it is becoming increasingly difficult to achieve both high integration and high speed through miniaturization technology, which is an extension of conventional technology. Therefore, technologies that enable vertical integration (i.e., multi-layer wiring technology) are being developed while continuing to miniaturize semiconductor elements.

[0003] One of the most important technologies in the process of manufacturing devices with multilayered wiring is CMP (chemical mechanical polishing). CMP is a technology for flattening the surface of a substrate obtained by forming a thin film on the substrate by chemical vapor deposition (CVD) or the like. For example, flattening by CMP is essential to ensure the depth of focus in lithography. If the surface of the substrate is uneven, it can cause inconveniences such as making it impossible to focus in the exposure process or making it impossible to form a fine wiring structure satisfactorily. CMP is also used in the device manufacturing process when forming a plasma oxide film (BPSG, HDP-SiO ２ The method is also applicable to a process for forming an isolation (inter-element isolation; STI: shallow trench isolation) region by polishing a silicon dioxide film (SiO2, p-TEOS, etc.); a process for forming an ILD film (an interlayer insulating film that electrically insulates metal members (wiring, etc.) in the same layer); and a process for planarizing a plug (e.g., an Al / Cu plug) after embedding a film containing silicon oxide in a metal wiring.

[0004] CMP is typically performed using an apparatus capable of supplying a polishing liquid onto a polishing pad. The surface of the substrate is polished by pressing the substrate against the polishing pad while supplying the polishing liquid between the surface of the substrate and the polishing pad. Thus, the polishing liquid is one of the key technologies in CMP technology, and various polishing liquids have been developed to obtain high-performance polishing liquids (see, for example, Patent Document 1 below).

[0005] Among the processes to which the above-mentioned CMP technology is applied, the CMP process of an ILD film, in particular, requires the polishing of silicon oxide at a high polishing rate. Therefore, silica-based polishing solutions (polishing solutions using abrasive grains containing silica-based particles) that have a high polishing rate are primarily used in the CMP process of an ILD film (see, for example, Patent Document 2 below). However, with silica-based polishing solutions, it tends to be difficult to control polishing scratches, which are the cause of defects. Furthermore, with the recent trend toward finer interconnects, it is desirable to reduce polishing scratches in the CMP process of an ILD film. However, unlike the CMP process of an insulating film for an isolation region, finishing mirror polishing is generally not performed. Therefore, the use of cerium-based polishing solutions (polishing solutions using abrasive grains containing cerium-based particles), which have fewer polishing scratches than silica-based polishing solutions, has been considered (see, for example, Patent Document 3 below).

[0006] JP 2008-288537 JP 9-316431 JP 10-102038

[0007] As described above, there are cases where it is required to actively remove silicon oxide, while there are cases where it is required to suppress the removal of silicon oxide. Furthermore, there are cases where it is required to actively remove one polishing material while suppressing the removal of another polishing material, for example, there are cases where it is required to actively remove silicon nitride while suppressing the removal of silicon oxide. For such polishing solutions, it is required to reduce the polishing rate ratio of silicon oxide to silicon nitride (polishing rate of silicon oxide / polishing rate of silicon nitride).

[0008] Furthermore, in order to obtain favorable polishing characteristics, it is sometimes required to suppress the aggregation of abrasive grains in a polishing liquid containing abrasive grains, and therefore it is sometimes required to reduce the polishing rate ratio of silicon oxide to silicon nitride while suppressing the aggregation of abrasive grains.

[0009] An object of one aspect of the present disclosure is to provide a polishing liquid that can reduce the removal rate ratio of silicon oxide to silicon nitride while suppressing agglomeration of abrasive grains.An object of another aspect of the present disclosure is to provide a polishing method using the polishing liquid.

[0010] In some aspects, the present disclosure relates to the following [1] to

[15] , etc. [1] Abrasive grains, at least one monocarboxylic acid compound selected from the group consisting of monocarboxylic acids having a nitrogen-containing heterocycle and salts of the monocarboxylic acids, and a nitrogen-containing compound having a hydrogen atom bonded to a nitrogen atom (excluding compounds corresponding to the monocarboxylic acid compounds), wherein the abrasive grains contain cerium-based particles, and the monocarboxylic acid compound has a topological polar surface area of ​​80.0 Å. ２A polishing liquid comprising the following: [2] The polishing liquid according to [1], wherein the abrasive grains contain cerium hydroxide. [3] The polishing liquid according to [1] or [2], wherein the monocarboxylic acid compound contains at least one pyridine compound selected from the group consisting of monocarboxylic acids having a pyridine ring and salts of the monocarboxylic acids. [4] The polishing liquid according to any one of [1] to [3], wherein the monocarboxylic acid compound contains at least one quinoline compound selected from the group consisting of monocarboxylic acids having a quinoline ring and salts of the monocarboxylic acids. [5] The polishing liquid according to any one of [1] to [4], wherein the monocarboxylic acid compound contains at least one pyrrole compound selected from the group consisting of monocarboxylic acids having a pyrrole ring and salts of the monocarboxylic acids. [6] The polishing liquid according to any one of [1] to [5], wherein the monocarboxylic acid compound contains at least one pyrazine compound selected from the group consisting of monocarboxylic acids having a pyrazine ring and salts of the monocarboxylic acids. [7] The polishing liquid according to any one of [1] to [6], wherein the monocarboxylic acid compound comprises at least one pyrimidine compound selected from the group consisting of monocarboxylic acids having a pyrimidine ring and salts of the monocarboxylic acids. [8] The polishing liquid according to any one of [1] to [7], wherein the monocarboxylic acid compound comprises at least one lactam compound selected from the group consisting of monocarboxylic acids having a lactam ring and salts of the monocarboxylic acids. [9] The polishing liquid according to any one of [1] to [8], wherein the content of the monocarboxylic acid compound is 0.001% by mass or more and less than 0.1% by mass.

[10] The polishing liquid according to any one of [1] to [9], wherein the nitrogen-containing compound comprises ammonia.

[11] The polishing liquid according to any one of [1] to

[10] , wherein the nitrogen-containing compound comprises a compound having a nitrogen-containing heterocycle.

[12] The polishing liquid according to any one of [1] to

[11] , wherein the nitrogen-containing compound comprises a primary amine (excluding compounds corresponding to compounds having a nitrogen-containing heterocycle).

[13] The polishing liquid according to any one of [1] to

[12] , which has a pH of 3.00 to 6.00.

[14] A polishing method comprising a step of polishing a member to be polished using the polishing liquid according to any one of [1] to

[13] .

[15] The polishing method according to

[14] , wherein the member to be polished contains at least one material selected from the group consisting of silicon oxide and silicon nitride.

[0011] According to one aspect of the present disclosure, there is provided a polishing liquid that can reduce the removal rate ratio of silicon oxide to silicon nitride while suppressing aggregation of abrasive grains. According to another aspect of the present disclosure, there is provided a polishing method using the polishing liquid.

[0012] Hereinafter, embodiments of the present disclosure will be described in detail.

[0013] In this specification, numerical ranges indicated using "to" indicate a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively. A numerical range "A or greater" means a range exceeding A and A. A numerical range "A or less" means a range less than A and A. In numerical ranges described in stages in this specification, the upper or lower limit of a numerical range in a certain stage can be arbitrarily combined with the upper or lower limit of a numerical range in another stage. In numerical ranges described in this specification, the upper or lower limit of the numerical range may be replaced with a value shown in the examples. "A or B" may include either A or B, or may include both. Unless otherwise specified, the materials exemplified in this specification can be used alone or in combination of two or more. When multiple substances corresponding to each component are present in the composition, the content of each component in the composition refers to the total amount of the multiple substances present in the composition, unless otherwise specified. The terms "layer" and "film" include structures that are formed on the entire surface as well as structures that are formed on a portion of the surface when observed in a plan view. The term "process" includes not only an independent process but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved. Unless otherwise specified, alkyl groups may be linear, branched, or cyclic. Hydroxy groups do not include OH structures contained in carboxy groups, sulfo groups, and phosphate groups.

[0014] <Polishing Liquid> The polishing liquid according to this embodiment contains abrasive grains, at least one monocarboxylic acid compound selected from the group consisting of a monocarboxylic acid having a nitrogen-containing heterocycle (hereinafter sometimes referred to as "monocarboxylic acid a") and a salt of monocarboxylic acid a (hereinafter sometimes referred to as "monocarboxylic acid compound A"), and a nitrogen-containing compound having a hydrogen atom bonded to a nitrogen atom (excluding compounds corresponding to monocarboxylic acid compound A; hereinafter sometimes referred to as "nitrogen-containing compound B"). In the polishing liquid according to this embodiment, the abrasive grains contain cerium-based particles (particles containing a cerium-based compound), and the monocarboxylic acid compound A has a topological polar surface area of ​​80.0 Å. ２ The following is the result.

[0015] The present inventors have discovered the following. Specifically, when a polishing liquid containing abrasive grains containing cerium-based particles contains a carboxylic acid having a nitrogen-containing heterocycle or a salt thereof, the abrasive grains may be prone to aggregation. Furthermore, although using a monocarboxylic acid compound A as the carboxylic acid having a nitrogen-containing heterocycle or a salt thereof contributes to suppressing aggregation of the abrasive grains, the abrasive grains may still be prone to aggregation depending on the type of component used in combination with the monocarboxylic acid compound A. In contrast, abrasive grain aggregation can be suppressed by using a monocarboxylic acid compound A in combination with a nitrogen-containing compound B. Furthermore, when a monocarboxylic acid compound A and a nitrogen-containing compound B are used in combination in this manner, the polishing rate ratio of silicon oxide to silicon nitride can be reduced while suppressing aggregation of the abrasive grains.

[0016] The polishing liquid according to this embodiment can reduce the polishing rate ratio of silicon oxide to silicon nitride while suppressing aggregation of abrasive grains. The polishing liquid according to this embodiment can achieve a particle size increase ratio of, for example, 30,000 or less (preferably, 10,000 or less, 3,000 or less, 2,000 or less, 1.700 or less, etc.) in the evaluation method described in the Examples below. The polishing liquid according to this embodiment can achieve a polishing rate ratio of the polishing rate of silicon oxide to the polishing rate of silicon nitride of, for example, 1.000 or less (preferably, less than 1.000, 0.800 or less, 0.600 or less, 0.400 or less, 0.200 or less, etc.) in the evaluation method described in the Examples below.

[0017] The factors that enable the reduction of the polishing rate ratio of silicon oxide to silicon nitride while suppressing abrasive grain aggregation are not entirely clear, but are presumed to be as follows. However, the factors are not limited to the following. That is, monocarboxylic acid compound A has a nitrogen-containing heterocycle and a carboxyl group and / or a carboxylate group as a functional group, and therefore monocarboxylic acid compound A coordinates (e.g., chelate coordinates) with cerium-based particles (single particles) via the nitrogen-containing heterocycle (particularly the nitrogen atom) and the functional group. This inhibits the surface reaction of the cerium-based particles with silicon oxide, thereby reducing the polishing rate of silicon oxide and reducing the polishing rate of silicon oxide relative to the polishing rate of silicon nitride. Compounds with a large topological polar surface area can induce abrasive grain aggregation by bridging multiple abrasive grains together due to the presence of many polar sites. On the other hand, monocarboxylic acid compound A can suppress abrasive grain aggregation due to its small topological polar surface area. In the nitrogen-containing compound B, the hydrogen atoms bonded to the nitrogen atoms form hydrogen bonds with the monocarboxylic acid compound A, thereby suitably adjusting the above-mentioned reaction inhibitory effect of the monocarboxylic acid compound A on the cerium-based particles. As described above, the polishing liquid according to this embodiment can reduce the removal rate ratio of silicon oxide to silicon nitride while suppressing aggregation of abrasive grains.

[0018] The polishing liquid according to this embodiment can be used to polish a member to be polished that contains silicon oxide, can be used to polish a member to be polished that contains silicon nitride, and can be used to polish a member to be polished that contains silicon oxide and silicon nitride. The polishing liquid according to this embodiment only needs to have the property of reducing the polishing rate ratio of silicon oxide to silicon nitride, and may polish silicon oxide and silicon nitride individually, or may polish silicon oxide and silicon nitride simultaneously. The polishing liquid according to this embodiment can be used as a CMP polishing liquid.

[0019] (Abrasive grains) In the polishing liquid according to this embodiment, the abrasive grains include cerium-based particles (particles containing a cerium-based compound). By using cerium-based particles as the abrasive grains, it is possible to reduce polishing scratches on the polished surface and to easily reduce the polishing rate ratio of silicon oxide to silicon nitride.

[0020] Examples of cerium-based compounds (compounds containing cerium) of the cerium-based particles include cerium hydroxide (a compound having a hydroxy group bonded to a cerium atom), cerium oxide, ammonium cerium nitrate, cerium acetate, cerium sulfate hydrate, cerium bromate, cerium bromide, cerium chloride, cerium oxalate, cerium nitrate, and cerium carbonate. The cerium-based compound may contain tetravalent cerium or trivalent cerium. The cerium-based particles may have water of hydration. From the viewpoint of easily reducing the polishing rate ratio of silicon oxide to silicon nitride or easily obtaining a polished surface with few polishing scratches and excellent flatness, the cerium-based particles may contain at least one selected from the group consisting of cerium hydroxide and cerium oxide, may contain cerium hydroxide, or may contain cerium hydroxide particles (particles containing cerium hydroxide).

[0021] From the viewpoint of easily adjusting the polishing rate ratio of silicon oxide to silicon nitride, the average particle size of the abrasive grains may be 0.100 nm or more, 0.500 nm or more, 1.000 nm or more, 1.500 nm or more, 2.000 nm or more, 2.500 nm or more, 3.000 nm or more, 3.300 nm or more, 3.400 nm or more, 3.500 nm or more, 3.600 nm or more, 3.700 nm or more, 3.800 nm or more, 3.900 nm or more, 4.000 nm or more, 4.200 nm or more, 4.500 nm or more, 5.000 nm or more, or 5.500 nm or more. The average particle size of the abrasive grains may be 200.000 nm or less, 150.000 nm or less, 120.000 nm or less, less than 120.000 nm, 110.000 nm or less, 100.000 nm or less, 80.000 nm or less, 50.000 nm or less, 40.000 nm or less, less than 40.000 nm, 38.000 nm or less, 35.000 nm or less, 30.000 nm or less, 20.000 nm or less, 10.000 nm or less, less than 10.000 nm, 9.000 nm or less, 8.000 nm or less, 7.000 nm or less, or 6.000 nm or less, from the viewpoint of easily reducing the polishing rate ratio of silicon oxide to silicon nitride, or easily obtaining a polished surface with few polishing scratches and excellent flatness. The average particle size of the abrasive grains may be 5.500 nm or less, 5.000 nm or less, less than 5.000 nm, 4.800 nm or less, 4.500 nm or less, 4.200 nm or less, 4.000 nm or less, 3.900 nm or less, 3.800 nm or less, 3.700 nm or less, 3.600 nm or less, 3.500 nm or less, or 3.400 nm or less, from the viewpoint of easily obtaining a polished surface with few polishing scratches and excellent flatness. From these viewpoints, the average particle size of the abrasive grains may be 0.100 to 200,000 nm, 0.100 to 100,000 nm, 0.100 to 10,000 nm, 0.100 to 6,000 nm, 1,000 to 200,000 nm, 1,000 to 100,000 nm, 1,000 to 10,000 nm, 1,000 to 6,000 nm, 3,000 to 200,000 nm, 3,000 to 100,000 nm, 3,000 to 10,000 nm, or 3,000 to 6,000 nm. The average particle size of the abrasive grains is the average particle size of the abrasive grains in the polishing liquid, and may be the 50% cumulative diameter (D50) in a mass-based cumulative particle size distribution curve.The average particle size of the abrasive grains can be measured by the method described in the Examples below.

[0022] The content of the cerium-based compound or cerium hydroxide in the abrasive grains may be 50.0 to 100.0 mass%, more than 50.0 mass% and 100.0 mass% or less, 55.0 to 100.0 mass%, 60.0 to 100.0 mass%, 65.0 to 100.0 mass%, 70.0 to 100.0 mass%, or 75.0 to 100.0 mass%, based on the total mass of the abrasive grains (total mass of the abrasive grains contained in the polishing liquid), from the viewpoint of easily reducing the polishing rate ratio of silicon oxide to silicon nitride, or from the viewpoint of easily obtaining a polished surface with few polishing scratches and excellent flatness.

[0023] The content of the abrasive grains may be within the following ranges based on the total mass of the polishing liquid, from the viewpoint of easily suppressing agglomeration of the abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride. The content of the abrasive grains may be 0.001 mass% or more, 0.005 mass% or more, 0.01 mass% or more, 0.03 mass% or more, 0.05 mass% or more, 0.08 mass% or more, or 0.1 mass% or more. The content of the abrasive grains may be 10 mass% or less, 5 mass% or less, 3 mass% or less, 2 mass% or less, 1 mass% or less, 0.8 mass% or less, 0.6 mass% or less, 0.5 mass% or less, 0.4 mass% or less, 0.3 mass% or less, 0.2 mass% or less, or 0.1 mass% or less. From these viewpoints, the content of the abrasive grains may be 0.001 to 10 mass%, 0.001 to 1 mass%, 0.001 to 0.5 mass%, 0.01 to 10 mass%, 0.01 to 1 mass%, 0.01 to 0.5 mass%, 0.05 to 10 mass%, 0.05 to 1 mass%, or 0.05 to 0.5 mass%.

[0024] (Monocarboxylic Acid Compound A) The polishing liquid according to this embodiment contains at least one monocarboxylic acid compound A selected from the group consisting of monocarboxylic acids a having a nitrogen-containing heterocycle and salts of monocarboxylic acids a. The monocarboxylic acid a has one carboxy group, and may have a carboxy group bonded to the nitrogen-containing heterocycle from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride. The salt of the monocarboxylic acid a has one carboxylate group. Examples of the salt of the monocarboxylic acid a include metal salts such as alkali metal salts. Examples of the alkali metal salt include sodium salts and potassium salts.

[0025] The topological polar surface area of ​​the monocarboxylic acid compound A is set to 80.0 Å from the viewpoint of suppressing aggregation of abrasive grains and reducing the polishing rate ratio of silicon oxide to silicon nitride. ２ The topological polar surface area of ​​the monocarboxylic acid compound A is 75.0 Å from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride. ２ Below, 70.0 Å ２ Below, 65.0 Å ２ Below, 60.0 Å ２ Below, 55.0 Å ２ Below, 54.0 Å ２ Below, 53.0Å ２ Below, 52.0 Å ２ or less, or 51.0 Å ２ The topological polar surface area of ​​the monocarboxylic acid compound A may be 20.0 Å or less from the viewpoint of easily suppressing aggregation of the abrasive grains. ２ More than 25.0 Å ２ More than 30.0 Å ２ More than 35.0 Å ２ More than 40.0 Å ２ More than 45.0 Å ２ More than 50.0 Å ２ More than 51.0 Å ２ More than 52.0 Å ２ More than 53.0 Å ２ More than 54.0 Å ２ More than 55.0 Å ２ More than 60.0 Å ２ or more, or 65.0 Å２ From these viewpoints, the topological polar surface area of ​​the monocarboxylic acid compound A may be 20.0 to 80.0 Å or more. ２ , 20.0~70.0Å ２ , 20.0~55.0Å ２ , 45.0~80.0Å ２ , 45.0~70.0Å ２ , 45.0 to 55.0 Å ２ , 50.0~80.0Å ２ , 50.0~70.0Å ２ , 50.0 to 55.0 Å ２ , 55.0~80.0Å ２ , 55.0~70.0Å ２ , 60.0~80.0Å ２ , or 60.0 to 70.0 Å ２ It may be.

[0026] The topological polar surface area (tPSA) of monocarboxylic acid compound A can be calculated by the method described in Ertl, P. et al., J. Med. Chem. 2000, 43, 3714-3717. The topological polar surface area of ​​monocarboxylic acid compound A can be reduced by increasing the hydrophobicity of the molecule, reducing the number of polar substituents, or the like.

[0027] The nitrogen-containing heterocycle of the monocarboxylic acid compound A may contain at least one selected from the group consisting of a monocycle and a fused ring, or may contain a monocycle, from the viewpoint of easily suppressing aggregation of abrasive grains. The number of nitrogen-containing heterocycles in the monocarboxylic acid compound A may be 1 or 2, or may be 1, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride. Examples of the nitrogen-containing heterocycle include a 3-membered ring, a 4-membered ring, a 5-membered ring, and a 6-membered ring. The nitrogen-containing heterocycle may contain at least one selected from the group consisting of a 5-membered ring and a 6-membered ring, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride. The nitrogen-containing heterocycle may contain at least one selected from the group consisting of an aromatic ring (nitrogen-containing aromatic heterocycle) and a non-aromatic ring, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride. The nitrogen-containing heterocycle may contain at least one selected from the group consisting of saturated heterocycles and unsaturated heterocycles, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride. The nitrogen-containing heterocycle may contain at least one selected from the group consisting of heterocycles having only nitrogen atoms as heteroatoms and heterocycles having nitrogen atoms and atoms other than nitrogen atoms (oxygen atoms, sulfur atoms, etc.) as heteroatoms, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride.

[0028] Examples of heterocycles having only a nitrogen atom as a heteroatom include monocyclic saturated heterocycles (excluding rings corresponding to lactam rings) such as an aziridine ring, an azetidine ring, a pyrrolidine ring, a piperidine ring, and a piperazine ring; five-membered unsaturated heterocycles such as a pyrrole ring, a pyrazole ring, an imidazole ring, a triazole ring (1,2,3-triazole ring and 1,2,4-triazole ring), and a tetrazole ring; and six-membered unsaturated heterocycles such as a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, and a triazine ring (for example, a 1,3,5-triazine ring). Heterocycles include lactam rings such as a pyrrolidone ring and a piperidone ring; fused bicyclic heterocycles such as an indazole ring, a benzimidazole ring, an indoline ring, an isoindoline ring, an isoindoline-1,3-dione ring, an indole ring, an indolizine ring, a quinoline ring, an isoquinoline ring, a quinoxaline ring, a quinazoline ring, a cinnoline ring, a phthalazine ring, a naphthyridine ring, a purine ring, a pteridine ring, a benzopyrazole ring, and a benzopiperidine ring; and fused tricyclic heterocycles such as a carbazole ring, an acridine ring, and a phenazine ring.

[0029] Examples of heterocycles having a nitrogen atom and an oxygen atom as heteroatoms include monocyclic saturated heterocycles such as a morpholine ring; monocyclic unsaturated heterocycles such as an oxazole ring and an isoxazole ring; fused bicyclic heterocycles such as a benzoxazole ring, a benzisoxazole ring, a benzoxazine ring and a benzodioxane ring; and fused tricyclic heterocycles such as a phenoxazine ring.

[0030] Examples of heterocycles having a nitrogen atom or a sulfur atom as a heteroatom include monocyclic heterocycles such as a thiazole ring; fused bicyclic heterocycles such as a benzothiazole ring; and fused tricyclic heterocycles such as a phenothiazine ring.

[0031] The nitrogen-containing heterocycle may contain at least one ring selected from the group consisting of a pyridine ring, a pyrrole ring, a pyrazine ring, a pyrimidine ring, a pyrrolidone ring, and a quinoline ring, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride. The nitrogen-containing heterocycle may contain at least one ring selected from the group consisting of a pyridine ring, a pyrrole ring, a pyrazine ring, a pyrimidine ring, and a pyrrolidone ring, from the viewpoint of easily suppressing aggregation of abrasive grains, or may contain at least one ring selected from the group consisting of a pyrrole ring, a pyrazine ring, a pyrimidine ring, and a pyrrolidone ring, or may contain at least one ring selected from the group consisting of a pyrazine ring, a pyrimidine ring, and a pyrrolidone ring. From the viewpoint of easily reducing the polishing rate ratio of silicon oxide to silicon nitride, the nitrogen-containing heterocycle may contain at least one ring selected from the group consisting of a pyridine ring, a pyrrole ring, a pyrimidine ring, a pyrrolidone ring, and a quinoline ring, or may contain at least one ring selected from the group consisting of a pyridine ring, a pyrrole ring, a pyrimidine ring, and a pyrrolidone ring, or may contain at least one ring selected from the group consisting of a pyridine ring, a pyrimidine ring, and a pyrrolidone ring.

[0032] From the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride, the monocarboxylic acid compound A may contain at least one pyridine compound selected from the group consisting of monocarboxylic acids a1 having a pyridine ring and salts of monocarboxylic acids a1, may contain at least one pyridine carboxylic acid compound selected from the group consisting of pyridine carboxylic acids and salts of pyridine carboxylic acids, may contain at least one quinoline compound selected from the group consisting of monocarboxylic acids a2 having a quinoline ring and salts of monocarboxylic acids a2, may contain at least one quinoline carboxylic acid compound selected from the group consisting of quinoline carboxylic acids and salts of quinoline carboxylic acids, may contain at least one pyrrole compound selected from the group consisting of monocarboxylic acids a3 having a pyrrole ring and salts of monocarboxylic acids a3, and may contain at least one pyrazine compound selected from the group consisting of monocarboxylic acids a3 having a pyrazine ring. It may contain at least one pyrazine compound selected from the group consisting of monocarboxylic acids a4 and salts of monocarboxylic acids a4, it may contain at least one pyrimidine compound selected from the group consisting of monocarboxylic acids a5 having a pyrimidine ring and salts of monocarboxylic acids a5, it may contain at least one lactam compound selected from the group consisting of monocarboxylic acids a6 having a lactam ring and salts of monocarboxylic acids a6, it may contain at least one selected from the group consisting of pyridinecarboxylic acid, quinolinecarboxylic acid, pyrrolecarboxylic acid, pyrazinecarboxylic acid, pyrimidinecarboxylic acid, pyroglutamic acid, and salts thereof, and it may contain at least one selected from the group consisting of picolinic acid, nicotinic acid, isonicotinic acid, quinaldic acid, pyrrole-3-carboxylic acid, pyrazine-2-carboxylic acid, pyrimidine-4-carboxylic acid, pyroglutamic acid, and salts thereof.

[0033] From the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride, the content of monocarboxylic acid compound A may be 50% by mass or more, more than 50% by mass, 60% by mass or more, 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, 98% by mass or more, or 99% by mass or more, or may be 100% by mass or less, based on the total amount of carboxylic acid and salts thereof contained in the polishing liquid according to this embodiment (the total amount of monocarboxylic acid a, carboxylic acids other than monocarboxylic acid a, and salts thereof) or the total amount of monocarboxylic acid and salts thereof contained in the polishing liquid according to this embodiment (the total amount of monocarboxylic acid a, monocarboxylic acids other than monocarboxylic acid a, and salts thereof).

[0034] The content of the monocarboxylic acid compound A (unit: mM = mmol / L) may be in the following ranges based on the total amount of the polishing liquid. From the viewpoint of easily reducing the removal rate ratio of silicon oxide to silicon nitride, the content of the monocarboxylic acid compound A may be 0.01 mM or more, 0.05 mM or more, 0.10 mM or more, 0.20 mM or more, 0.30 mM or more, 0.40 mM or more, 0.50 mM or more, 0.60 mM or more, 0.70 mM or more, 0.80 mM or more, 0.90 mM or more, 1.00 mM or more, 1.50 mM or more, 2.00 mM or more, 2.50 mM or more, 3.00 mM or more, 3.50 mM or more, 4.00 mM or more, 4.50 mM or more, 5.00 mM or more, or 5.50 mM or more. The content of the monocarboxylic acid compound A may be 10.00 mM or less, 9.50 mM or less, 9.00 mM or less, 8.50 mM or less, 8.00 mM or less, 7.50 mM or less, 7.00 mM or less, 6.50 mM or less, or 6.00 mM or less, from the viewpoint of easily suppressing aggregation of the abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride. The content of the monocarboxylic acid compound A may be 5.50 mM or less, 5.00 mM or less, 4.50 mM or less, 4.00 mM or less, 3.50 mM or less, 3.00 mM or less, 2.50 mM or less, 2.00 mM or less, 1.50 mM or less, 1.00 mM or less, or 0.90 mM or less, from the viewpoint of easily suppressing aggregation of the abrasive grains. From these viewpoints, the content of monocarboxylic acid compound A may be 0.01 to 10.00 mM, 0.01 to 6.00 mM, 0.01 to 3.00 mM, 0.01 to 1.50 mM, 0.10 to 10.00 mM, 0.10 to 6.00 mM, 0.10 to 3.00 mM, 0.10 to 1.50 mM, 0.50 to 10.00 mM, 0.50 to 6.00 mM, 0.50 to 3.00 mM, 0.50 to 1.50 mM, 1.50 to 10.00 mM, 1.50 to 6.00 mM, 1.50 to 3.00 mM, 3.00 to 10.00 mM, or 3.00 to 6.00 mM.

[0035] The content of monocarboxylic acid compound A (unit: mass %) may be in the following range based on the total mass of the polishing liquid: From the viewpoint of easily reducing the polishing rate ratio of silicon oxide to silicon nitride, the content of monocarboxylic acid compound A may be 0.001 mass % or more, 0.003 mass % or more, 0.005 mass % or more, 0.007 mass % or more, more than 0.007 mass %, 0.008 mass % or more, 0.01 mass % or more, 0.02 mass % or more, 0.03 mass % or more, 0.04 mass % or more, more than 0.04 mass %, 0.05 mass % or more, more than 0.05 mass %, 0.06 mass % or more, or 0.07 mass % or more. The content of monocarboxylic acid compound A may be 0.5% by mass or less, 0.3% by mass or less, 0.2% by mass or less, less than 0.2% by mass, 0.1% by mass or less, less than 0.1% by mass, 0.09% by mass or less, 0.08% by mass or less, or less than 0.08% by mass, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride. The content of monocarboxylic acid compound A may be 0.07% by mass or less, 0.06% by mass or less, 0.05% by mass or less, less than 0.05% by mass, 0.04% by mass or less, 0.03% by mass or less, or 0.02% by mass or less, from the viewpoint of easily suppressing aggregation of abrasive grains. From these viewpoints, the content of monocarboxylic acid compound A may be 0.001 to 0.5% by mass, 0.001 to 0.1% by mass, 0.001 to 0.1% by mass or more but less than 0.1% by mass, 0.001 to 0.05% by mass, 0.001 to 0.03% by mass, 0.01 to 0.5% by mass, 0.01 to 0.1% by mass, 0.01 to 0.05% by mass, 0.01 to 0.03% by mass, 0.03 to 0.5% by mass, 0.03 to 0.1% by mass, 0.03 to 0.05% by mass, 0.05 to 0.5% by mass, 0.05 to 0.1% by mass, or 0.05% by mass or more but less than 0.1% by mass.

[0036] The content of the monocarboxylic acid compound A (unit: parts by mass) may be within the following ranges relative to 100 parts by mass of the abrasive grains. From the viewpoint of easily reducing the polishing rate ratio of silicon oxide to silicon nitride, the content of the monocarboxylic acid compound A may be 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 20 parts by mass or more, more than 20 parts by mass, 25 parts by mass or more, 30 parts by mass or more, 40 parts by mass or more, more than 40 parts by mass, 45 parts by mass or more, 50 parts by mass or more, 60 parts by mass or more, or 70 parts by mass or more. From the viewpoint of easily suppressing aggregation of the abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride, the content of the monocarboxylic acid compound A may be 500 parts by mass or less, 300 parts by mass or less, 200 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, or less than 80 parts by mass. From the viewpoint of easily suppressing aggregation of abrasive grains, the content of monocarboxylic acid compound A may be 70 parts by mass or less, 60 parts by mass or less, 50 parts by mass or less, 40 parts by mass or less, 30 parts by mass or less, or 20 parts by mass or less. From these viewpoints, the content of monocarboxylic acid compound A may be 1 to 500 parts by mass, 1 to 100 parts by mass, 1 to 50 parts by mass, 1 to 30 parts by mass, 10 to 500 parts by mass, 10 to 100 parts by mass, 10 to 50 parts by mass, 10 to 30 parts by mass, 30 to 500 parts by mass, 30 to 100 parts by mass, 30 to 50 parts by mass, 50 to 500 parts by mass, or 50 to 100 parts by mass.

[0037] (Nitrogen-Containing Compound B) The polishing liquid according to this embodiment contains a nitrogen-containing compound B having a hydrogen atom bonded to a nitrogen atom (excluding compounds corresponding to monocarboxylic acid compound A). The nitrogen-containing compound B may contain a compound having no carboxy group or carboxylic acid salt group, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride.

[0038] The nitrogen-containing compound B is selected from the group consisting of a compound represented by the general formula NHR, from the viewpoint of easily suppressing aggregation of abrasive grains and easily reducing the polishing rate ratio of silicon oxide to silicon nitride. １ R ２ (In the formula, R １ and R ２ each independently represents a hydrogen atom or a monovalent group, or may be bonded to each other to form a ring),１ and R ２ may include a compound in which the groups bond to each other to form a nitrogen-containing heterocycle.

[0039] Examples of the monovalent group include a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group (e.g., a phenyl group), and a substituted or unsubstituted nitrogen-containing heterocycle. A substituted or unsubstituted hydrocarbon group may be used as the monovalent group. Examples of the substituent include a hydroxy group, a carboxy group, a carboxylate group, a sulfonic acid group, a phosphoric acid group, a fluorine atom, a nitro group, and a hydrazine group.

[0040] The nitrogen-containing heterocycle described above as a monovalent group, or R １ and R ２ Examples of the nitrogen-containing heterocycle formed by bonding together include monocyclic saturated heterocycles (excluding rings corresponding to lactam rings) such as an aziridine ring, an azetidine ring, a pyrrolidine ring, a piperidine ring, and a piperazine ring; five-membered unsaturated heterocycles such as a pyrrole ring, a pyrazole ring, an imidazole ring, a triazole ring (1,2,3-triazole ring and 1,2,4-triazole ring), and a tetrazole ring; six-membered unsaturated heterocycles such as a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, and a triazine ring (for example, a 1,3,5-triazine ring); and lactam rings such as a pyrrolidone ring, a piperidone ring, and an imidazolin-4-one ring. １ and R ２ The nitrogen-containing heterocycle formed by bonding together may contain at least one ring selected from the group consisting of an imidazole ring, a pyridine ring, and an imidazoline-4-one ring, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride.

[0041] The nitrogen-containing compound B is ammonia (NH ３Examples of the nitrogen-containing compound B include a nitrogen-containing heterocyclic compound (a compound having a nitrogen-containing heterocycle), a primary amine (excluding compounds corresponding to nitrogen-containing heterocyclic compounds), and a secondary amine (excluding compounds corresponding to nitrogen-containing heterocyclic compounds or primary amines). From the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride, the nitrogen-containing compound B may contain at least one selected from the group consisting of ammonia, a nitrogen-containing heterocyclic compound, and a primary amine, and may contain ammonia, a nitrogen-containing heterocyclic compound, or a primary amine.

[0042] The nitrogen-containing heterocyclic compound may be a nitrogen-containing heterocyclic compound having the monovalent group R １ and R ２ Examples of the nitrogen-containing heterocycle formed by bonding together include compounds having the nitrogen-containing heterocycles described above. The nitrogen-containing heterocyclic compound may include a compound having at least one ring selected from the group consisting of an imidazole ring, a pyridine ring, and an imidazolin-4-one ring, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride.

[0043] From the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride, the primary amine may include a primary amine having a hydroxy group, a primary amine having an alkyl group substituted with a hydroxy group, a primary amine having two or more (e.g., three) hydroxy groups, or a primary amine having an alkyl group substituted with two or more (e.g., three) hydroxy groups. Examples of primary amines include trishydroxymethylaminomethane, 2-amino-1,3-propanediol, 2-amino-2-methyl-1,3-propanediol, 2-amino-2-ethyl-1,3-propanediol, and glucosamine.

[0044] Examples of secondary amines include dialkylamines such as dimethylamine, diethylamine, dipropylamine, dibutylamine, dihexylamine, and dioctylamine.

[0045] The nitrogen-containing compound B may contain at least one compound selected from the group consisting of ammonia, trishydroxymethylaminomethane, aminopyridine (e.g., 3-aminopyridine), imidazole, and creatinine, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the polishing rate ratio of silicon oxide to silicon nitride, and may contain ammonia.

[0046] (Other Additives) The polishing liquid according to this embodiment may further contain other additives (components other than the above-described abrasive grains, monocarboxylic acid compound A, and nitrogen-containing compound B). Examples of such additives include oxidizing agents (e.g., peroxide-based oxidizing agents); polymeric compounds; pH adjusters (described below); and organic solvents (ethanol, acetone, etc.). The polishing liquid according to this embodiment may not contain an oxidizing agent (e.g., peroxide-based oxidizing agent). The content of the oxidizing agent (e.g., peroxide-based oxidizing agent) may be 0.2% by mass or less, less than 0.2% by mass, 0.1% by mass or less, less than 0.1% by mass, 0.01% by mass or less, less than 0.01% by mass, 0.001% by mass or less, or less than 0.001% by mass, based on the total mass of the polishing liquid, or may be substantially 0% by mass.

[0047] The polishing liquid according to this embodiment may not contain a nonionic polymer. The content of the nonionic polymer may be 0.0005% by mass or less, less than 0.0005% by mass, 0.0001% by mass or less, or less than 0.0001% by mass, based on the total mass of the polishing liquid, and may be substantially 0% by mass. The polishing liquid according to this embodiment may be in a form that does not fall under the category of "a polishing liquid containing metal oxide particles, an organic acid having a monodentate ligand, a nonionic polymer, and water, and having a pH of 3.0 to 7.0, wherein the nonionic polymer contains at least one selected from the group consisting of polyglycerin, polyoxyethylene polyglyceryl ether, and polyoxypropylene polyglyceryl ether."

[0048] The polishing liquid according to this embodiment may be free of cationized polyvinyl alcohol, and may be free of at least one sugar selected from the group consisting of amino sugars, derivatives of the amino sugars, polysaccharides containing amino sugars, and derivatives of the polysaccharides. The content of the cationized polyvinyl alcohol may be 0.005% by mass or less, less than 0.005% by mass, 0.001% by mass or less, or less than 0.001% by mass, based on the total mass of the polishing liquid, and may be substantially 0% by mass. The content of the at least one sugar selected from the group consisting of amino sugars, derivatives of the amino sugars, polysaccharides containing amino sugars, and derivatives of the polysaccharides (e.g., the total amount of the sugars) may be 0.001% by mass or less, less than 0.001% by mass, 0.0001% by mass or less, or less than 0.0001% by mass, based on the total mass of the polishing liquid, and may be substantially 0% by mass. The polishing liquid according to this embodiment may be in a form that does not fall under the category of "a polishing liquid containing oxide particles, cationized polyvinyl alcohol, at least one sugar selected from the group consisting of an amino sugar, a derivative of the amino sugar, a polysaccharide having an amino sugar, and a derivative of the polysaccharide, and water."

[0049] (Water) The polishing liquid according to this embodiment may contain water. The water is not particularly limited, but may include at least one selected from the group consisting of deionized water, ion-exchanged water, and ultrapure water.

[0050] (pH) The pH (25°C) of the polishing liquid according to this embodiment may be in the following ranges, from the viewpoint of easily suppressing aggregation of abrasive grains or easily reducing the removal rate ratio of silicon oxide to silicon nitride: The pH may be 1.00 or more, 1.50 or more, 2.00 or more, more than 2.00, 2.50 or more, 3.00 or more, more than 3.00, 3.50 or more, 4.00 or more, more than 4.00, 4.10 or more, 4.20 or more, 4.30 or more, 4.40 or more, 4.50 or more, 4.60 or more, 4.70 or more, or 4.80 or more. The pH may be 9.00 or less, less than 9.00, 8.50 or less, 8.00 or less, less than 8.00, 7.50 or less, 7.00 or less, less than 7.00, 6.50 or less, 6.00 or less, less than 6.00, 5.95 or less, 5.90 or less, 5.80 or less, 5.50 or less, 5.30 or less, 5.00 or less, less than 5.00, or 4.90 or less. From these viewpoints, the pH may be 1.00 to 9.00, 1.00 to 7.00, 1.00 to 6.00, 3.00 to 9.00, 3.00 to 7.00, 3.00 to 6.00, 4.00 to 9.00, 4.00 to 7.00, or 4.00 to 6.00. The pH can be measured by the method described in the Examples below.

[0051] The pH can vary depending on the type and content of the components contained in the polishing liquid. The polishing liquid according to this embodiment may contain a pH adjuster for adjusting the pH in addition to the above-mentioned components, or may not contain a pH adjuster in addition to the above-mentioned components. The pH adjuster is not particularly limited, and examples thereof include acids such as nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, and boric acid; and bases such as sodium hydroxide, potassium hydroxide, and calcium hydroxide.

[0052] (Storage Mode) The polishing liquid according to this embodiment may be stored as a stock liquid for a polishing liquid with a reduced amount of water compared to when it is used. The stock liquid for a polishing liquid is a stock liquid for obtaining a polishing liquid, and the polishing liquid can be obtained by diluting the stock liquid for a polishing liquid with water before or at the time of use.

[0053] The polishing liquid according to this embodiment may be stored as a single-component polishing liquid containing at least abrasive grains, a monocarboxylic acid compound A, and a nitrogen-containing compound B, or as a multiple-component polishing liquid containing a slurry (first liquid) and an additive liquid (second liquid). In the multiple-component polishing liquid, the components of the polishing liquid are separated into a slurry and an additive liquid so that the slurry and the additive liquid are mixed to form the polishing liquid. The slurry may contain abrasive grains. The additive liquid may contain at least one selected from the group consisting of a monocarboxylic acid compound A and a nitrogen-containing compound B. The components of the polishing liquid may be separated into three or more liquids and stored. In the multiple-component polishing liquid, the slurry and the additive liquid may be mixed immediately before or during polishing to prepare the polishing liquid. The slurry and the additive liquid in the multiple-component polishing liquid may be supplied onto the polishing platen, respectively, and the slurry and the additive liquid may be mixed on the polishing platen to prepare the polishing liquid.

[0054] <Polishing Method> The polishing method according to this embodiment includes a polishing step in which a member to be polished is polished using the polishing liquid according to this embodiment. The member to be polished may contain at least one selected from the group consisting of silicon oxide and silicon nitride. The shape of the member to be polished is not particularly limited and may be, for example, a film. In the polishing step, the surface to be polished of the member to be polished can be polished, and a surface to be polished containing at least one selected from the group consisting of silicon oxide and silicon nitride may be polished. In the polishing step, at least a portion of the member to be polished can be polished and removed. The polishing liquid used in the polishing step may be the above-mentioned one-component polishing liquid, a polishing liquid obtained by diluting the above-mentioned polishing liquid storage liquid with water, or a polishing liquid obtained by mixing the slurry and additive liquid of the above-mentioned multiple-component polishing liquid. The member to be polished is not particularly limited and may be a wafer (e.g., a semiconductor wafer) or a chip (e.g., a semiconductor chip). The member to be polished may be a wiring board or a circuit board.

[0055] <Manufacturing Method, etc.> The component manufacturing method according to this embodiment includes a component fabrication step in which a component is obtained using a polished member (substrate) polished by the polishing method according to this embodiment. The component according to this embodiment is a component obtained by the component manufacturing method according to this embodiment. The component according to this embodiment is not particularly limited, and may be an electronic component (e.g., a semiconductor component such as a semiconductor package), a wafer (e.g., a semiconductor wafer), or a chip (e.g., a semiconductor chip). As one aspect of the component manufacturing method according to this embodiment, an electronic component is obtained using a polished member polished by the polishing method according to this embodiment. As one aspect of the component manufacturing method according to this embodiment, a semiconductor component (e.g., a semiconductor package) is obtained using a polished member polished by the polishing method according to this embodiment. The component manufacturing method according to this embodiment may include a polishing step in which a polished member is polished by the polishing method according to this embodiment before the component fabrication step.

[0056] The component manufacturing method according to this embodiment may include, as one aspect of the component manufacturing process, a singulation step of singulating a polished member (substrate) polished by the polishing method according to this embodiment. The singulation step may be, for example, a step of dicing a wafer (e.g., a semiconductor wafer) polished by the polishing method according to this embodiment to obtain chips (e.g., semiconductor chips). As one aspect of the component manufacturing method according to this embodiment, the electronic component manufacturing method according to this embodiment may include a step of singulating a polished member polished by the polishing method according to this embodiment to obtain electronic components (e.g., semiconductor components). As one aspect of the component manufacturing method according to this embodiment, the semiconductor component manufacturing method according to this embodiment may include a step of singulating a polished member polished by the polishing method according to this embodiment to obtain semiconductor components (e.g., semiconductor packages).

[0057] The component manufacturing method according to this embodiment may include, as one aspect of the component manufacturing process, a connection process for connecting (e.g., electrically connecting) a polished member (substrate) polished by the polishing method according to this embodiment to another connected object. The connected object to be connected to the polished member polished by the polishing method according to this embodiment is not particularly limited and may be the polished member polished by the polishing method according to this embodiment, or may be a connected object different from the polished member polished by the polishing method according to this embodiment. In the connection process, the polished member and the connected object may be directly connected (connected in a state where the polished member and the connected object are in contact), or the polished member and the connected object may be connected via another member (such as a conductive member). The connection process may be performed before the singulation process, after the singulation process, or before or after the singulation process.

[0058] The connecting step may be a step of connecting a polished surface of a member to be polished that has been polished by the polishing method according to this embodiment to a connected body, or a step of connecting a connecting surface of a member to be polished that has been polished by the polishing method according to this embodiment to a connecting surface of a connected body. The connecting surface of the member to be polished may be a polished surface polished by the polishing method according to this embodiment. The connecting step can obtain a connected body comprising a member to be polished and a connected body. In the connecting step, if the connecting surface of the member to be polished has a metal portion, the connected body may be brought into contact with the metal portion. In the connecting step, if the connecting surface of the member to be polished has a metal portion and the connecting surface of the connected body has a metal portion, the metal portions may be brought into contact with each other. The metal portion may contain copper.

[0059] The device according to this embodiment (for example, an electronic device such as a semiconductor device) includes at least one member selected from the group consisting of a polished member polished by the polishing method according to this embodiment and a part according to this embodiment.

[0060] The present disclosure will be described in more detail below with reference to examples, but the present disclosure is not limited to these examples.

[0061] <Preparation of cerium hydroxide slurry> 350 g of Ce(NH ４ ) ２ (NO ３ ) ６A 50% by mass aqueous solution (manufactured by Nippon Chemical Industry Co., Ltd., product name: CAN50 Liquid) was dissolved in 7825 g of pure water to obtain a solution. Next, while stirring this solution, 750 g of an imidazole aqueous solution (10% by mass aqueous solution) was added dropwise at a rate of 5 mL / min to obtain a precipitate containing particles containing cerium hydroxide. This precipitate was centrifuged (4000 min). －１ After the mixture was heated for 5 minutes, the liquid phase was removed by decantation to perform solid-liquid separation, and the cerium hydroxide-containing particles (abrasive grains) were recovered. 10 parts by mass of the cerium hydroxide-containing particles and 990 parts by mass of water were mixed, and then the particles were dispersed in the water using an ultrasonic cleaner to prepare a cerium hydroxide slurry.

[0062] <Preparation of Polishing Liquid> For the polishing liquids of Examples 1 to 17 and Comparative Examples 2 to 11, polishing liquids (CMP polishing liquids) were prepared by mixing the above-mentioned cerium hydroxide slurry, compound A shown in Tables 1 and 2, compound B shown in Tables 1 and 2, and water. For the polishing liquid of Comparative Example 1, a polishing liquid (CMP polishing liquid) was prepared by mixing the above-mentioned cerium hydroxide slurry and water. In Table 2, DBU represents diazabicycloundecene, and TEAH represents tetraethylammonium hydroxide. Regarding the content of each component in each polishing liquid (based on the total amount of the polishing liquid), the content of particles (abrasive grains) containing cerium hydroxide was 0.1 mass %, and the content of compound A was the content shown in Tables 1 and 2. Ertl, P. et al., J. Med. Chem. The topological polar surface area (TPSA) of Compound A was calculated by the method described in 2000, 43, 3714-3717. The results are shown in Tables 1 and 2.

[0063] <pH> The pH of the polishing solution was measured under the following conditions. The results are shown in Tables 1 and 2. Measurement temperature: 25°C Measuring device: HORIBA, Ltd., product name "Model (D-71)" Measurement method: After three-point calibration of the pH meter using a phthalate pH standard solution (pH: 4.01), a neutral phosphate pH standard solution (pH: 6.86), and a borate pH standard solution (pH: 9.18) as pH standard solutions, the electrode of the pH meter was immersed in the polishing solution, and the pH was measured using the above-mentioned measuring device after 2 minutes or more had passed and the pH had stabilized.

[0064] <Abrasive Grain Particle Size> The average particle size (D50) of the abrasive grains in the polishing liquid was measured under the following conditions. The results are shown in Tables 1 and 2. Measurement temperature: 25°C Measurement device: Wyatt Technology, product name "Mobius" Measurement method: Approximately 4 mL of the polishing liquid was placed in a 1 cm square cell, and the cell was then placed in the measurement device. Measurement was performed under conditions of a laser wavelength of 532 nm, a measurement temperature of 25°C, a measurement angle of 163.5°, and an accumulation number of 10. The D50 value of the particle size distribution calculated from the scattering intensity converted into weight from the measurement results was obtained as the average particle size.

[0065] <Evaluation> (Particle Size Increase Ratio) The average particle size (D50) of abrasive particles in abrasive dispersions having compositions in which Compound A was omitted from the polishing liquids of Examples 1 to 17 and Comparative Examples 2 to 11 was measured by the same method as described above. The ratio of the average particle size of abrasive particles in the polishing liquid to the average particle size of abrasive particles in the abrasive dispersion (average particle size of abrasive particles in polishing liquid / average particle size of abrasive particles in abrasive dispersion) was calculated as the particle size increase ratio. The results are shown in Tables 1 and 2.

[0066] (Polishing Characteristics) The polishing characteristics were evaluated according to the following procedure using each of the polishing liquids of Examples 1 to 17 and Comparative Examples 1 to 4. For Comparative Examples 5 to 11, in which the particle size increase ratio exceeded 30,000, the polishing characteristics were not evaluated.

[0067] As a blanket wafer, a silicon oxide film (SiO ２ A φ300 mm wafer having a silicon nitride (SiN) film on its surface and a φ300 mm wafer having a silicon nitride (SiN) film on its surface were prepared.

[0068] The above-mentioned wafer was polished under the following polishing conditions: Polishing apparatus: F-REX300X (manufactured by Ebara Corporation) Polishing liquid flow rate: 200 mL / min Polishing pad: polyurethane foam resin having closed cells (manufactured by Rohm and Haas Japan Co., Ltd., model number: IC1000) Polishing pressure: 14.7 kPa (2 psi) Platen rotation speed: 53 rpm Head rotation speed: 50 rpm Polishing time: 30 seconds Cleaning: The polished wafer was washed with water and then dried with a spin dryer.

[0069] Using an optical interference film thickness measuring device (device name: NOVA i500) manufactured by Nova Measuring Instruments, the film thickness of the film to be polished (silicon oxide film and silicon nitride film) on the above-mentioned wafer was measured at 65 points before and after polishing. The 65 film thickness measurements were performed on a line including the center of the wafer, with the center of the wafer as the reference, at positions of 149 mm, 148 mm, 147 mm, and 145 mm, positions every 5 mm between 145 mm and -145 mm (140 mm, 135 mm, ..., -135 mm, -140 mm), and positions of -145 mm, -147 mm, -148 mm, and -149 mm (distances opposite to positive distances from the center of the wafer are expressed as negative). The change in film thickness was calculated using the average film thickness at 65 points. Based on the change in film thickness and polishing time, the polishing rate (silicon oxide (SiO ２ The polishing rate of silicon oxide (SiO ) and the polishing rate of silicon nitride (SiN ) were calculated. ２ The results are shown in Tables 1 and 2.

[0070]

[0071]

Claims

1. An abrasive liquid containing abrasive grains, at least one monocarboxylic acid compound selected from the group consisting of a monocarboxylic acid having a nitrogen-containing heterocyclic ring and a salt of the monocarboxylic acid, and a nitrogen-containing compound having a hydrogen atom bonded to a nitrogen atom (excluding a compound corresponding to the monocarboxylic acid compound), wherein the abrasive grains contain cerium-based particles, and the topological polar surface area of the monocarboxylic acid compound is 80.0 Å ２ or less.

2. The polishing liquid according to claim 1, wherein the abrasive grains contain cerium hydroxide.

3. The polishing liquid according to claim 1, wherein the monocarboxylic acid compound contains at least one pyridine compound selected from the group consisting of a monocarboxylic acid having a pyridine ring and a salt of the monocarboxylic acid.

4. The polishing liquid according to claim 1, wherein the monocarboxylic acid compound contains at least one quinoline compound selected from the group consisting of a monocarboxylic acid having a quinoline ring and a salt of the monocarboxylic acid.

5. The polishing liquid according to claim 1, wherein the monocarboxylic acid compound contains at least one pyrrole compound selected from the group consisting of a monocarboxylic acid having a pyrrole ring and a salt of the monocarboxylic acid.

6. The polishing liquid according to claim 1, wherein the monocarboxylic acid compound contains at least one pyrazine compound selected from the group consisting of a monocarboxylic acid having a pyrazine ring and a salt of the monocarboxylic acid.

7. The polishing liquid according to claim 1, wherein the monocarboxylic acid compound contains at least one pyrimidine compound selected from the group consisting of a monocarboxylic acid having a pyrimidine ring and a salt of the monocarboxylic acid.

8. The polishing liquid according to claim 1, wherein the monocarboxylic acid compound contains at least one lactam compound selected from the group consisting of a monocarboxylic acid having a lactam ring and a salt of the monocarboxylic acid.

9. The polishing liquid according to claim 1, wherein the content of the monocarboxylic acid compound is 0.001% by mass or more and less than 0.1% by mass.

10. The polishing liquid according to claim 1, wherein the nitrogen-containing compound contains ammonia.

11. The polishing liquid according to claim 1, wherein the nitrogen-containing compound contains a compound having a nitrogen-containing heterocyclic ring.

12. The polishing liquid according to claim 1, wherein the nitrogen-containing compound contains a primary amine (excluding a compound corresponding to a compound having a nitrogen-containing heterocyclic ring).

13. The polishing liquid according to claim 1, wherein the pH is 3.00 to 6.

00.

14. A polishing method comprising a step of polishing a member to be polished using the polishing liquid according to any one of claims 1 to 13.

15. The polishing method according to claim 14, wherein the member to be polished contains at least one selected from the group consisting of silicon oxide and silicon nitride.

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