Automotive microwave-free high-voltage current sensor for small current intensities based on isotropic quantum sensor elements with NV centers, and applications of said current sensor

Abstract

The invention relates to a current sensor having an electrical conductor (LTG), the current sensor being designed such that a current flow of an electric current (ILTG) in the electrical conductor (LTG) generates a magnetic field in the region surrounding the conductor (LTG). The current sensor is also designed such that the magnetic field passes through first NV centers (NV) and / or first paramagnetic centers (NV) with a first magnetic flux density B1. The current sensor is also designed such that the magnetic field passes through second NV centers (NV) and / or second paramagnetic centers (NV) with a second magnetic flux density B2. The current sensor is also designed such that a first magnitude of the first magnetic flux density B1 is different from a second magnitude of the second magnetic flux density B2. The current sensor also has fourth means (CTR) which are designed to infer the current value of the electric current (ILTG) in the line (LTG) from the sensed first intensity (Ifl1(t)) of the first fluorescence radiation (FL1) and / or the sensed first time delay (Δfl1(t)) of the first time curve of the first fluorescence intensity (Ifl1(t)) of the first fluorescence radiation (FL1) and the sensed second fluorescence intensity (Ifl2(t)) of the second fluorescence radiation (FL2) and / or the sensed second time delay (Δfl2(t)) of the second time curve of the second fluorescence intensity (Ifl2(t)) of the second fluorescence radiation (FL2) and optionally to keep at hand, store and / or transmit and / or output said current value.

Description

[0001] Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 1 / 109 Automotive, microwave-free high-voltage current sensor for small currents based on isotropic quantum sensor elements with NV centers and its applications Priorities This patent application claims the priority of the German patent application DE 102024100468.1 dated January 9, 2024. This patent application claims the priority of the German patent application DE 102024100471.1 dated January 9, 2024. This patent application claims the priority of the German patent application DE 102024100473.8 dated January 9, 2024. This patent application claims priority from German patent application DE 102024100475.4, filed January 9, 2024. This patent application claims priority from German patent application DE 102024108878.8, filed March 27, 2024. This patent application claims priority from German patent application DE 102024121451.1, filed July 26, 2024.General Introduction The invention relates to a current sensor with a plurality of isotropic sensor elements, each comprising a plurality of disordered crystals, preferably diamond crystals, with a plurality of paramagnetic centers, preferably NV centers. When an electric current flows in a line, the respective different sensor-element-specific magnetic flux densities flow through the sensor elements.This enables the device's controller CTR to deduce the current value in the line from the fluorescence intensities of the fluorescence radiation from the sensor elements, even though the characteristic curve of the fluorescence intensity as a function of the magnetic flux density is non-linear and not readily reversible in the range of low magnetic flux densities and thus in the range of low electrical currents. State of the art Numerous publications exist on the detection of electrical current intensity using the fluorescence radiation from NV centers. Examples include publications EP 3292416 B1 and WO 2022207476 A1. These publications use microwave radiation to measure the local magnetic flux density. This meansThey require the supply of microwave radiation via coaxial cable or stripline or similar waveguides and antenna structures for irradiating the diamonds with microwave radiation. As an example of the problems, the document presented here cites document CN 116794383 A, in which the insulating body's insulating capacity is massively reduced by a coaxial cable. Detecting the magnetic flux density using microwaves has the disadvantage that a device using such microwaves must record a spectrum in order to determine the distance between the resonances, which leads to a reduction in the speed of the sensors. Furthermore, the electronics become considerably more complex. Current sensors based on NV centers are also known from US 2023 / 0160930 A1, in which microwave signals control the sensor elements with NV centers. A method for the localized production of NV centers is known from WO 2020260640.WO 2021 018654 A1 discloses a method for addressing Q-bits. WO 2021083448 A1 discloses a quantum computer based on NV centers. WO 2001073935 A1 discloses an optically controllable switch. WO 2020089465 A2 discloses a device for measuring electrical currents by counter-regulation. Its flux density / fluorescence intensity curve exhibits an area of ​​ambiguity in the flux density / fluorescence intensity curve (see Figure 1). The use of diamonds with a high density of NV centers exacerbates this problem. The technical teaching of WO 2020089465 A2 therefore proposes using a magnetic bias field to suitably adjust the magnetic operating point. However, this base magnet requires a calibration step in production and introduces additional weak points into the system that lead to thermal drift.It is the aim of the technical teaching presented here to nevertheless correctly and unambiguously determine the magnitude value of one or more magnetic flux densities in the first fluorescence intensity range (FIB1, Figure 1) and from there to the probable current value of the magnitude of the electric current (I. LTG) in the line (LTG) without the need for a bias field to adjust the operating point. This makes it possible to omit calibration, which significantly reduces costs. WO 2021151429 A2 discloses a current sensor based on an isotropic sensor element without solving the problem of ambiguity in the first fluorescence intensity range (FIB1, Figure 1). Document WO 2020239172 A1 describes the CMOS integration of NV diamonds. WO 2021013308 A1 and WO 2021089091 A1 disclose various control methods and application examples for such magnetometers without solving the problem of ambiguity in the first fluorescence intensity range (FIB1, Figure 1). WO 2024041703 discloses a method for producing isotropic sensor elements at the ends of optical fibers, as an example. This document is of particular importance for the technical teaching presented here.The technical teaching of the document presented here is a further development of the technical teachings of the following documents: DE 102024100466.5 (identical to DE 102024100468.1), DE 102024100467.3 (identical to DE 102024100471.1), DE 102024100470.3 (identical to DE 102024100473.8), DE 102024100474.6 (identical to DE 102024100475.4), DE 102024108878.8, DE 102024002505.7, DE 102024121450.3, (the last 3 all covered by the German patent application DE 102024121451.1). The invention is based on the object of providing a base-field-free and microwave-free current sensor with good electrical insulation based on NV centers and an optically readable and optically controllable sensor element. The independent claims solve this problem. Further embodiments are the subject of subclaims.Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 4 / 109 Solution to the problem Basic idea of ​​the solution to the problem Basic design According to the basic idea of ​​the proposed current sensor, the current sensor comprises an electrical conductor (LTG). According to the proposed task, the current sensor's task is to measure the current value of an electrical current (I). LTG ) in the conductor (LTG). First sensor element SE1The current sensor typically comprises first means (RSYS, LIV, DAC, S5w1, DRV1, S51, LED1, DM 1, LWL1, TM1, SE1) for irradiating first NV centers (NV1) and / or first paramagnetic centers (NV1) of a first isotropic sensor element (SE1) with first pump radiation (LB) having a first optical pump radiation wavelength (pmp1) and having a first pump radiation intensity (I pmp1(t)) of the first pump radiation (LB1). Furthermore, the current sensor according to the proposal comprises means, such as a first dichroic mirror (DM1) or a first filter (F11), for separating the first fluorescence radiation (FL1) of the first NV centers (NV1) and / or first paramagnetic centers (NV1) from other electromagnetic radiation, such as reflected first pump radiation (LB1). The first fluorescence radiation (F11) has a first fluorescence radiation wavelength (fl1). Furthermore, the proposed, isotropic first sensor element (SE1) comprises means (SE1, TM1, LWL1, DM1, PD1, SO1, V11, S11, LIV, RSYS) for detecting the first fluorescence intensity (I fl1 (|B1(I LTG)|)) of the thus separated first fluorescence radiation (FL1) of the first NV centers (NV1) and / or first paramagnetic centers (NV1) in the form of a first intensity value. Additionally or alternatively, the proposed isotropic first sensor element (SE1) can comprise means (SE1, TM1, LWL1, DM1, PD1, SO1, V11, S11, LIV, RSYS) for detecting the first delay (fl1(|B1(ILTG)|)) of the first temporal profile of the first fluorescence intensity (I fl1 (|B2(I LTG )|)) of the first fluorescence radiation (FL1) of the first NV centers (NV1) and / or first paramagnetic centers (NV1) of the first isotropic sensor element (SE1) compared to the first temporal profile of the first pump radiation intensity (I pmp1 (t)) of the first pump radiation (LB1) with a first optical pump radiation wavelength ( pmp1) and with a first pump radiation intensity (I pmp1(t)) of the first pump radiation (LB1) in the form of a first delay value. These device parts (DAC, S5w1, DRV1, S51, LED1, SE1, TM1, LWL1, DM1, PD1, SO1, V11, S11, LIV, RSYS) of the current sensor form the first measurement channel. Isotropy of the first sensor element (SE1), in the sense of the document presented here, means that the first intensity measurement value and / or the first delay measurement value do not depend on the orientation of the isotropic first sensor element (SE1) in space. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 5 / 109 However, the first intensity measurement value and / or the first delay measurement value typically depend on the translational positioning of the isotropic first sensor element (SE1) in space relative to the line (LTG). Second sensor element SE2. In addition, the proposed current sensor comprises second means (RSYS, LIV, DAC, S5w2, DRV2, S52, LED2, DM 2,LWL2, TM2, SE2) for irradiating second NV centers (NV2) and / or second paramagnetic centers (NV2) of a second sensor element (SE2) with second pump radiation (LB2). These second means comprise, according to the proposal, means such as dichroic mirrors (DM2, F12) for separating the second fluorescence radiation (FL2) of the second NV centers (NV2) and / or second paramagnetic centers (NV2) from other electromagnetic radiation, such as reflected second pump radiation (LB2). The second fluorescence radiation (FL2) has a second fluorescence radiation wavelength (FL2). In addition, the proposed current sensor comprises means (SE2, TM2, LWL2, DM2, PD2, SO2, V12, S12, LIV, RSYS) for detecting the second fluorescence intensity (I fl2 (|B2(I LTG)|)) of the thus separated second fluorescence radiation (FL2) of the second NV centers (NV2) and / or second paramagnetic centers (NV2) in the form of a second intensity value. Additionally or alternatively, the current sensor can comprise means for detecting the second delay (fl2(|B2(ILTG)|))) of the second temporal profile of the second fluorescence intensity (Ifl2(|B2(ILTG)|)) of the second fluorescence radiation (FL2) of the second NV centers (NV2) and / or second paramagnetic centers (NV2) relative to the second temporal profile of the second pump radiation intensity (I pmp2(t)) of the second pump radiation (LB2) with a second optical pump radiation wavelength (pmp2) and with a second pump radiation intensity (Ipmp2(t)) of the second pump radiation (LB2) in the form of a second delay value. These device parts (DAC, S5w1, DRV1, S51, LED1, SE1, TM1, LWL1, DM1, PD1, SO1, V11, S11, LIV, RSYS) of the current sensor form the second measurement channel. Isotropy of the second sensor element (SE2) in the sense of the document presented here means that the second intensity measurement value and / or the second delay measurement value do not depend on the orientation of the isotropic second sensor element (SE2) in space. However, the second intensity measurement value and / or the second delay measurement value typically depend on the translational positioning of the isotropic second sensor element (SE2) in space relative to the line (LTG).Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 6 / 109 Characteristic technical teaching The special feature of the technical teaching presented here is that the current sensor is designed to detect a flow of an electric current (I. LTG) in the line (LTG) generates a magnetic field in the vicinity of the line (LTG) and that this magnetic field flows through the first NV centers (NV1) and / or first paramagnetic centers (NV1) with a first magnetic flux density (B1) and that this magnetic field flows through the second NV centers (NV2) and / or second paramagnetic centers (NV2) with a second magnetic flux density (B2).Because the current sensor is now set up in such a way that the magnitude of the first magnetic flux density (B1) is different from the magnitude of the second magnetic flux density (B2), the computer system of the current sensor gains additional and, above all, non-linearly dependent data in order to be able to correctly and unambiguously determine the magnitude value of one or more magnetic flux densities at one or more locations of one or more isotropic sensor elements (SE1, SE2) of the current sensor in the area of ​​ambiguity of the flux density / fluorescence intensity curve (see Figure 1) in the first fluorescence intensity range (FIB1) and from there to the probable current value of the magnitude of the electrical current (I. LTG ) in the line (LTG). For this purpose, the proposed current sensor has a fourth means (CTR) to calculate the measured first intensity (I fl1(t))of the first fluorescence radiation (FL1) and / or from the detected first time delay (fl1(t)) of the first time course of the first fluorescence intensity (Ifl1(t)) of the first fluorescence radiation (FL1) and / or from the detected second fluorescence intensity (I fl2 (t)) of the second fluorescence radiation (FL2) and / or the detected second time delay (fl2(t)) of the second time course of the second fluorescence intensity (I fl2 (t)) of the second fluorescence radiation (FL2) to the current value of the electric current (I LTG) in the line (LTG) and, if necessary, to keep it ready, store it, transmit it, and / or output it. The advantage of such a sensor system is that, firstly, it can use NV centers or other paramagnetic centers to measure the current and, secondly, it can eliminate the deficiency of the irreversibility of the curve of fluorescence intensity against the magnitude of the magnetic flux density B of the isotropic sensor elements (SE1, SE2) using the additional information from the isotropic second sensor element (SE2), and can correctly infer exactly one value of the electrical current (ILTG) in the line (LTG).Variant 1 In a first variant of the current sensor, firstly, the first isotropic sensor element (SE1) comprises a plurality of randomly and preferably statistically evenly distributed differently oriented first crystals with the one or more first paramagnetic centers (NV1) and / or the one or more first NV centers (NV1) and secondly, the second isotropic sensor element (SE2) comprises a plurality of randomly and preferably statistically evenly distributed differently oriented second crystals with the one or more second paramagnetic centers (NV2) and / or the one or more second NV centers (NV2). An essential point is that the at least two isotropic sensor elements (SE1 and SE2) of the current sensor are operated microwave-free by the current sensor.This enables ultra-high-voltage-capable galvanic and thermal isolation between the current sensor's evaluation and control circuit (LIV) on the one hand and the isotropic sensor elements (SE1, SE2) on the other. Optical systems preferably establish the optical connection between the current sensor's evaluation and control circuit (LIV) and the isotropic sensor elements (SE1, SE2). The optical connection between the current sensor's evaluation and control circuit (LIV) and the isotropic sensor elements (SE1, SE2) preferably operates exclusively in the optical wavelength range according to ISO 20473:2007-04. The current sensor's evaluation and control circuit (LIV) typically controls the isotropic sensor elements (SE1, SE2) exclusively with one or more optical pump radiations (LB1). , LB 2 ), derenPump radiation wavelengths (pmp1, pmp2) lie exclusively in the optical wavelength range according to ISO 20473:2007-04. Electrically conductive waveguides for microwave radiation in the microwave range from 30 cm to 1 mm wavelength would electrically and thermally weaken the thermal and / or galvanic insulation of insulators and / or between the evaluation and control circuit (LIV) of the current sensor on the one hand and the isotropic sensor elements (SE1, SE2) on the other. These are then unnecessary due to the purely optical communication between the evaluation and control circuit (LIV) on the one hand and the sensor elements (SE1, SE2) on the other.Therefore, the current sensor is preferably configured to irradiate the isotropic first sensor element (SE1) and the isotropic second sensor element (SE2) exclusively with electromagnetic radiation having one or more wavelengths of a first wavelength range and with optional electromagnetic radiation having one or more wavelengths of a second wavelength range, but at least microwave-free, wherein the first wavelength range comprises wavelengths from 1 nm to 1 mm (optical wavelength range according to ISO standard ISO 20473:2007-04). The first pump radiation wavelength (pmp1) of the first pump radiation (LB1) and the second pump radiation wavelength (pmp2) of the second pump radiation (LB2) lie in the first optical wavelength range according to ISO 20473:2007-04. The second wavelength range typically conveys the physical values ​​of the magnitude of the current value of the electric current (I) to be detected by the current sensor. LTG) in the line (LTG) e.g. in the form of the different quasi-static, only slowly changing magnetic flux densities (B1, B2) which the electric current (I LTG ) at the respective location of the respective isotropic sensor elements (SE1, SE2) in Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 8 / 109 different ways. The way in which the different quasi-static, only slowly changing magnetic flux densities (B1, B2) are induced by the electric current (I LTG) at the respective location of the respective isotropic sensor elements (SE1, SE2) is described here in several different variants below. According to the technical teaching described here, the said second wavelength range comprises wavelengths from 30 cm to infinity, i.e., a frequency range from 0 Hz to 1 GHz, for the purpose of making these influencing physical quantities measurable. In accordance with the technical teaching presented here, the current sensor is designed not to utilize electromagnetic radiation from a third wavelength range of 30 cm to 1 mm, i.e., the microwave range, or, better still, to shield it from the irradiation of the isotropic sensor elements (SE1, SE2), for example, by shielding plates or similar shielding. The shielding plates can be connected to the electrical conductor. Preferably, they are at the same electrical potential as the line (LTG). This means,that the current sensor is preferably configured to, firstly, not irradiate the first paramagnetic centers (NV1) and / or the isotropic first sensor element (SE1) with electromagnetic radiation of this third wavelength range, and secondly, not irradiate the second paramagnetic centers (NV2) and / or the isotropic second sensor element (SE2) with electromagnetic radiation of this third wavelength range. At the same time or alternatively, the current sensor can thus be configured tothat electromagnetic radiation of the third wavelength range from 30 cm to 1 mm, firstly, cannot influence and / or irradiate the first paramagnetic centers (NV1) and / or the isotropic first sensor element (SE1), and secondly, cannot influence or irradiate the second paramagnetic centers (NV2) and / or the isotropic second sensor element (SE2). Variant 2 In a further, possibly supplementary, embodiment of the proposed current sensor, the isotropic first sensor element (SE1) comprises a plurality of randomly and preferably statistically evenly distributed differently oriented first crystals with the one or more first paramagnetic centers (NV1) and / or the one or more first NV centers (NV1), and the isotropic second sensor element (SE2) comprises a plurality ofrandomly and preferably statistically evenly distributed differently aligned second crystals with the one or more second paramagnetic centers (NV2) and / or the one or more second NV centers (NV2). This has the advantage of isotropy and makes each isotropic sensor element (SE1, SE2) a respective isotropic sensor element (SE1, SE2). In conjunction with the basic idea Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 9 / 109, this makes it possible to dispense with microwave radiation for controlling the isotropic sensor elements (SE1, SE2) and thus simplifies the design of the current sensor. The current sensor is then preferably configured toto irradiate the isotropic first sensor element (SE1) and the isotropic second sensor element (SE2) with electromagnetic radiation having one or more wavelengths of the above first wavelength range and with optional electromagnetic radiation having one or more wavelengths of the above second wavelength range, but at least microwave-free. The sensor system is configured to irradiate the isotropic first sensor element (SE1) with a first electromagnetic radiation of the first wavelength range with a first wavelength range intensity relative to the irradiation energy. The sensor system is configured to irradiate the isotropic second sensor element (SE2) with a second electromagnetic radiation of the first wavelength range with a second wavelength range intensity relative to the irradiation energy. The sensor system is configured toto irradiate the isotropic first sensor element (SE1) with a first second electromagnetic radiation of the second wavelength range with a first second wavelength range intensity relative to the irradiation energy. The sensor system is configured to irradiate the isotropic second sensor element (SE2) with a second second electromagnetic radiation of the second wavelength range with a second second wavelength range intensity relative to the irradiation energy. As a result, the total irradiation intensity is the sum of the first first wavelength range intensity plus the first second wavelength range intensity plus the second first wavelength range intensity plus the second second wavelength range intensity. As an easily verifiable feature of the microwave-free nature of a proposed sensor system, the document presented here states:that the third irradiation intensity of the electromagnetic radiation of a third wavelength range from 30 cm to 1 mm, i.e. the microwave range, based on the irradiation energy that irradiates the isotropic first sensor element (SE1) and the isotropic second sensor element (SE2) in total, is less than 10% of the total irradiation intensity and / or less than 5% of the total irradiation intensity and / or less than 2% of the total irradiation intensity and / or less than 1% of the total irradiation intensity and / or less than 0.5% of the total irradiation intensity and / or less than 0.2% of the total irradiation intensity and / or less than 0.1% of the total irradiation intensity and / or less than 0.05% of the total irradiation intensity and / or less than 0.02% of the total irradiation intensity and / or less than 0,01% of the total irradiation intensity Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 10 / 109 and / or less than 0.005% of the total irradiation intensity and / or less than 0.002% of the total irradiation intensity and / or less than 0.001% of the total irradiation intensity. If this is maintained, the aforementioned advantages of being microwave-free and the isotropy of sensitivity described in more detail below, which are not possible with a microwave-based sensor system, are achieved. Variant 3 In the third variant of the proposed current sensor, the isotropic first sensor element (SE1) comprises a first carrier material (TM1) in which the first crystals are embedded, and the isotropic second sensor element (SE2) comprises a second carrier material (TM2).in which the second crystals are embedded. Preferably, the first carrier material (TM1) is transparent to electromagnetic radiation with the first pump radiation wavelength (pmp1) and to electromagnetic radiation with the first fluorescence radiation wavelength (fl1), and the second carrier material (TM2) is transparent to electromagnetic radiation with the second pump radiation wavelength (pmp2) and to electromagnetic radiation with the second fluorescence radiation wavelength (fl2). Preferably, the first carrier material (TM1) and the second carrier material (TM2) are transparent to electromagnetic optical radiation in the optical wavelength range according to ISO 20473:2007-04 from 1 nm to 1 mm. Preferably, the carrier material is liquid before processing and can be cured by means of curing radiation with a curing wavelength, Hpreferably be cured. For details and rework, the document presented here refers, for example, to the technical teaching of WO 2024041703 A1 (PCT / DE2023 / 100614). Preferably, the first sensor element (SE1) is designed identically to the second sensor element (SE2). This is very easy, even for assistants, and thus cost-effective, using the self-adjusting process for producing an optical fiber with a self-adjusted sensor element of WO 2024041703 A1 (PCT / DE2023 / 100614). Variant 4 Variant 4 of the current sensor addresses the question of how the feature that the current sensor is configured such that the magnitude of the first magnetic flux density B1 is different from the magnitude of the second magnetic flux density B2 can be achieved constructively, and provides a first cost-effective solution for this.For this purpose, variant 4 proposes that the first position of the isotropic first sensor element (SE1) relative to the conductor of the conductor (LTG) differs from the second position of the isotropic second sensor element (SE2) relative to the conductor of the conductor (LTG) in such a way that at a current value of the electric current (I) different from zero, LTG ) in the Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 11 / 109 conductor (LTG) the first magnitude of the first magnetic flux density (B1) is different from the magnitude of the second magnetic flux density (B2) and therefore the first fluorescence intensity (I fl1 (|B1|)) of the isotropic first sensor element (SE1) from the second fluorescence intensity (I fl2(|B2|)) of the isotropic second sensor element (SE2). For example, the isotropic first sensor element (SE1) can have a different average distance from the conductor (LTG) than the distance that the isotropic second sensor element (SE2) has from the conductor (LTG). The advantage is that this can be achieved very easily and inexpensively, for example by injection-molded parts that connect the optical fibers with the isotropic sensor elements. Variant 5 Variant 5 of the current sensor also addresses the question of how the feature that the current sensor is designed such that the magnitude of the first magnetic flux density B1 is different from the magnitude of the second magnetic flux density B2 can be achieved constructively, and provides a second cost-effective solution for this. According to this variant, the shape of the conductor (LTG) is designed such that at a current value of the electric current (I LTG) in the conductor (LTG) the first magnitude of the first magnetic flux density (B1) differs from the magnitude of the second magnetic flux density (B2) and therefore the first fluorescence intensity (Ifl1(|B1|)) of the first sensor element (SE1) differs from the second fluorescence intensity (I fl2 (|B2|)) of the second sensor element (SE2). This can be achieved, for example, by means of meanders in the cable routing, loops to form coils and / or flat coils, cable kinks, cable widths, etc. The document presented here recommends a numerical simulation of the field distributions for typical current spectra of the line currents (I LTG) in the line (LTG). One advantage is that such a line shape is generally simple and inexpensive to obtain. Variant 6 Variant 6 of the current sensor also addresses the question of how the feature that the current sensor is designed so that the magnitude of the first magnetic flux density B1 is different from the magnitude of the second magnetic flux density B2 can be achieved structurally, and provides a detailed, special, second cost-effective solution for this. Here, the electrical conductor (LTG) has, as the shape of the electrical conductor (LTG), at least a first meander loop (MS1) of the electrical conductor (LTG) and at least a second meander loop (MS2) of the electrical conductor (LTG). The first meander loop (MS1) of the electrical conductor (LTG) is different from the first meander loop (MS1) of the electrical conductor (LTG).This Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 12 / 109 concerns both the non-identity and preferably also the design, so that the magnetic flux densities (B1, B2) within the slots (SL1, SL2) of the meander loops (MSL1, MSL2) at a line current (I) different from 0A. LTG ) are different. The first meander loop (MS1) of the electrical conductor (LTG) has a first conductor section (LTGa1) of the electrical conductor (LTG) as a forward line of the electrical current (I LTG ) and a first second conductor section (LTGb1) of the electrical conductor (LTG), which is different from the first conductor section (LTGa1), as a return line for the electrical current (ILTG). The second meander loop (MS2) of the electrical conductor (LTG) has a second first conductor section (LTGa2) of the electrical conductor (LTG) as a forward line for the electrical current (I LTG) and a second conductor section (LTGb2) of the electrical conductor (LTG), which is different from the second first conductor section (LTGa2), as a return line of the electrical current (I LTG). The first conductor section (LTGa1) of the electrical conductor (LTG) and the first second conductor section (LTGb1) of the electrical conductor (LTG) are preferably electrically connected in series one behind the other and thus form the first meander loop (MSL1) with the first slot (SL1) of the first meander loop (MSL1). The second first conductor section (LTGa2) of the electrical conductor (LTG) and the second second conductor section (LTGb2) of the electrical conductor (LTG) are preferably electrically connected in series one behind the other and thus form the second meander loop (MSL2) with the second slot (SL2) of the second meander loop (MSL2).In this case, the first first conductor section (LTGa1) of the first meander loop (MS1) is preferably guided at least in sections substantially parallel to the first second conductor section (LTGb1) of this first meander loop (MS1) at a first meander loop distance (b1) and the second first conductor section (LTGa2) of the second meander loop (MS2) is preferably guided at least in sections substantially parallel to the second second conductor section (LTGb2) of this second meander loop (MS2) at a second meander loop distance (b2).In order to achieve the different magnetic flux densities (B1 and B2) in the slots (SL1, SL2) of the meander loops (MSL1, MSL2), the first meander loop spacing (b1) between the first first conductor section (LTGa1) of the first meander loop (MSL1) and the first second conductor section (LTGb1) of the first meander loop (MSL1) is preferably different from the second meander loop spacing (b2) between the second first conductor section (LTGa2) of the second meander loop (MSL2) and the second second conductor section (LTGb2) of the second meander loop (MSL2).In order to utilize the different magnetic flux densities (B1 and B2) in the slots (SL1, SL2) of the meander loops (MSL1, MSL2), the first sensor element (SE1) with the first NV centers (NV1) and / or first paramagnetic centers (NV1) is preferably placed between the first conductor section (LTGa1) of the first meander loop (MS1) and the first second conductor section (LTGb1) of this first meander loop (MS1) in or on the thus formed first slot (SL1) of this first meander loop (MS1).To utilize the different magnetic flux densities (B1 and B2) in the slots (SL1, SL2) of the meander loops (MSL1, MSL2), the second sensor element (SE2) with the second NV centers (NV2) and / or second paramagnetic centers (NV2) is preferably placed between the second first conductor section (LTGa2) of the second meander loop (MS2) and the second second conductor section (LTGb2) of this second meander loop (MS2) in or on the thus formed second slot (SL2) of this second meander loop (MS2). This then constructively achieves the object, the feature that the current sensor is configured such that the magnitude of the first magnetic flux density B1 is different from the magnitude of the second magnetic flux density B2. A particular advantage is that the cable with the slots (SL1, SL2) can be very easily machined out of a metal sheet by machining (e.g. by sawing or milling) and / or etching.The slots (SL1, SL2) can be made very thin, as no disruptive electrical insulation is required to electrically isolate the sensor elements (SE1, SE2) due to the microwave-free design of the current sensor. By using the technical teaching of WO 2024041703 A1 (PCT / DE2023 / 100614) for the self-aligning production of the respective isotropic sensor elements (SE1, SE2) at each end of a respective optical fiber, the optical fibers with the respective sensor elements can be manufactured very thinly, which enables a very small slot width (b1, b2) in the range of a few μm for the narrowest slot. This increases the sensitivity of the respective sensor element (SE1, SE2) and thus of the current sensor.Variant 7 Variant 7 of the current sensor also addresses the question of how the feature that the current sensor is designed so that the magnitude of the first magnetic flux density B1 is different from the magnitude of the second magnetic flux density B2 can be achieved structurally, and provides a third approach for this. According to this variant, the proposed current sensor comprises at least one magnetic circuit (MK). This can be formed, for example, using magnetic conductors for magnetic flux densities, such as ferromagnetic materials and / or ferrites. An electrical current flow of a conduction current (I) feeds the magnetic circuit. LTG ) in the line (LTG) a magnetic excitation (H LTG) into the at least one magnetic circuit (MK). In order to ensure that the magnitude of the first magnetic flux density B1 is different from the magnitude of the second magnetic flux density B2, the shape of the device parts Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 14 / 109 of the magnetic circuit (MK) and / or their composition and / or their material parameters are preferably configured such that the first magnitude of the first magnetic flux density B1 is different from the magnitude of the second magnetic flux density B2. The object of this variant is thereby fulfilled. Variant 8 Variant 8 is a refinement of variant 7, wherein the at least one magnetic circuit now has one or more respective air gaps (ag1, ag2) and wherein the first sensor element (SE1) and the second sensor element (SE2) are located in one of the plurality of respective air gaps (ag1, ag2).This amplifies the magnetic flux densities (B1, B2) in the respective air gaps (ag1, ag2), thus increasing the sensitivity of the sensor system. Through the network of magnetic resistors, the respective magnetic flux densities (B1, B2) in the respective air gaps (ag1, ag2) can be adjusted relative to the electrical current (I). LTG) in the line (LTG) can be adjusted very precisely and in a predefined manner. One parameter can also be the size of the respective air gap (ag1, ag2). It is therefore conceivable that the air gaps (ag1, ag2) can be designed differently from one another. Variant 9 Variant 9 implements this in more detail. According to variant 9, the at least one magnetic circuit has a first air gap (ag1) and the isotropic first sensor element (SE1) is located in the first air gap (ag1). The at least one magnetic circuit further has a second air gap (ag2) and the second sensor element (SE2) is located in the second air gap (ag2). According to this variant 9, the first air gap (ag1) is different from the second air gap (ag2). As a result, the electrical current flow of the line current (I LTG) in the line (LTG) causes the first magnetic flux density (B1) in the first air gap (ag1), which flows through the isotropic first sensor element (SE1) and the electrical current flow of the line current (I LTG) in the line (LTG) causes the second magnetic flux density (B2) in the second air gap (ag2), which flows through the second sensor element (SE2). This measure alone can, if the design of the magnetic circuit does not compensate for these differences, lead to the amount of the first magnetic flux density B1 being different from the amount of the second magnetic flux density B2. Variant 10 According to variant 10, the first air gap (ag1) is preferably a first sub-device of a first magnetic sub-circuit, which is itself a magnetic circuit (MK) (sub-circuit) and is itself a first magnetic sub-circuit of the at least one magnetic circuit (MK).The second air gap (ag2) is preferably a second sub-device of a second magnetic partial circuit, which itself is a magnetic circuit (MK) (partial circuit) and is itself a second magnetic partial circuit of the at least one magnetic circuit (MK). According to variant 10, the isotropic first sensor element (SE1) is preferably positioned relative to the line (LTG) in the first air gap (ag1), which is assigned to this first sensor element (SE1), such that a line current (I. LTG ) in the line (LTG) generates a magnetic field with a first flux density (B1) in the first air gap (ag1) that, with sufficient current intensity of the line current (I LTG) the first optical fluorescence radiation (FL1) of the one or more first NV centers (NV1) and / or of the one or more first paramagnetic centers (NV1) of the first sensor element (SE1) is influenced in a specific manner relative to this first sensor element (SE1). According to variant 10, the isotropic second sensor element (SE2) is preferably positioned relative to the line (LTG) in the second air gap (ag2) associated with this second sensor element (SE2) in such a way that a line current (I LTG ) in the line (LTG) generates a magnetic field with a second flux density (B2) in the second air gap (ag2) that, with sufficient current intensity of the line current (I LTG) the second optical fluorescence radiation (FL2) of the one or more second NV centers (NV2) and / or the one or more second paramagnetic centers (NV2) of the second sensor element (SE2) is influenced in a specific manner with respect to this second sensor element (SE2), which differs from the respective specific ways of influencing the first sensor element (SE1). If the design of the magnetic circuit does not compensate for these differences, this measure can lead to the magnitude of the first magnetic flux density B1 being different from the magnitude of the second magnetic flux density B2. Variant 11 According to variant 11 of the current sensor, the first air gap (ag1) is preferably a device part of the associated first magnetic partial circuit of the at least one magnetic circuit (MK).The second air gap (ag2) is preferably a device part of the associated second magnetic partial circuit of the at least one magnetic circuit (MK). Preferably, the second air gap (ag2) is different from the first air gap (ag1). In this variant 11, the isotropic first sensor element (SE1) is preferably located in the first air gap (ag1). In this variant 11, the isotropic second sensor element (SE2) is preferably located in the second air gap (ag2).Preferably, in this variant 11, the current sensor is configured such that only a respective first part of the magnetic flux (LTG) causes a smaller first partial magnetic flux (ag1) of the magnetic flux (LTG) in the first air gap (ag1) with the first magnetic flux density (B1), and Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 16 / 109that only a respective second part of the magnetic flux (LTG) causes a smaller second partial magnetic flux (ag2) of the magnetic flux (LTG) in the second air gap (ag2) with the second magnetic flux density (B2). Preferably, the first partial magnetic flux (ag1) of the magnetic flux (LTG) in the first air gap (ag1) and a smaller second partial magnetic flux (ag2) of the magnetic flux. in the second air gap (ag2). This measure alone can, if the design of the magnetic circuit does not compensate for these differences, lead to the magnitude of the first magnetic flux density B1 being different from the magnitude of the second magnetic flux density B2. Variant 12. After the previous variants dealt with the establishment of the isotropy of the sensor elements (SE1, SE2), the absence of microwaves, and the assurance of different magnetic flux densities (B1, B2), this 12th variant deals with the evaluation of the different fluorescence radiation responses of the isotropic and preferably identically shaped sensor elements (SE1, SE2) due to the different magnetic flux densities (B1, B2). According to the proposal, the proposed current sensor comprises third means for this purpose in order to access a current measurement value for the electric current (I LTG) in the conductor (LTG), which at least temporarily depends on the first intensity measurement value and on the second intensity measurement value. According to the proposal, the proposed current sensor also comprises the third means for outputting this current measurement value and / or for storing this current measurement value and / or for keeping this current measurement value available and / or for using this current measurement value. Variant 13 Instead of the intensity measurement values, delay measurement values ​​can also be used. Variant 13 therefore proposes that the current sensor comprises third means for accessing a current measurement value for the electrical current (I LTG) in the conductor (LTG), wherein at least temporarily the current measurement value depends on the first delay measurement value and on the second delay measurement value. According to the proposal, the proposed current sensor also comprises the third means for outputting this current measurement value and / or for storing this current measurement value and / or for keeping this current measurement value available and / or for using this current measurement value. Variants 12 and 13 can of course be mixed and used together. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 17 / 109 Variant 14 One such mixed variant of variants 12 and 13 is variant 14. Variant 14 therefore proposes that the current sensor comprises third means for responding to a current measurement value for the electrical current (I LTG) in the conductor (LTG), wherein at least temporarily the current measurement value depends on the first intensity measurement value and the second intensity measurement value and on the first delay measurement value and on the second delay measurement value. According to the proposal, the proposed current sensor also comprises the third means for outputting this current measurement value and / or for storing this current measurement value and / or for keeping this current measurement value available and / or for using this current measurement value. Variant 15 Variant 15 now reveals in more detail what these third means can look like. Therefore, variant 15 proposes that the current sensor comprises a computer system (RSYS) with a computer core (μC). The computer core (μC) should be configured to implement a computer- and / or machine-implemented method for mapping one or more measured value vectors to a measured value of the electrical current (I LTG) in the conductor (LTG). These measured value vectors serve as input values ​​for the computer- and / or machine-implemented method. In a first possible case, a measured value vector can contain at least one first intensity measured value (I fl1 (|B|)) of the first fluorescence intensities (I fl1 (|B|)) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B|)) of the second fluorescence intensities (I fl2 (|B|)) of the first sensor element (SE1) and / or in a second possible case at least one first intensity measurement value (I fl1 (|B|)) of the first fluorescence intensities (I fl1(|B|)) of the first sensor element (SE1) and each comprise at least one first deceleration measurement value and / or in a third possible case each comprise at least one first deceleration measurement value and each comprise at least one second deceleration measurement value and / or in a fourth possible case each comprise at least one first intensity measurement value (I fl1 (|B|)) of the first fluorescence intensities (I fl1 (|B|)) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B|)) of the second fluorescence intensities (I fl2(|B|)) of the first sensor element (SE1) and each comprise at least one first delay measurement value and / or Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 18 / 109 in a fifth possible case, each comprise at least one first intensity measurement value (Ifl1(|B|)) of the first fluorescence intensities (Ifl1(|B|)) of the first sensor element (SE1) and each comprise at least one second intensity measurement value (I fl2 (|B|)) of the second fluorescence intensities (I fl2 (|B|)) of the first sensor element (SE1) and each comprise at least one second deceleration measurement value and / or in a sixth possible case each comprise at least one first intensity measurement value (I fl1 (|B|)) of the first fluorescence intensities (I fl1(|B|)) of the first sensor element (SE1) and each comprise at least one first deceleration measurement value and each comprise at least one second deceleration measurement value and / or in a seventh possible case each comprise at least one second intensity measurement value (I fl2 (|B|)) of the second fluorescence intensities (I fl2 (|B|)) of the first sensor element (SE1) and each comprise at least one first deceleration measurement value and each comprise at least one second deceleration measurement value and / or in an eighth possible case each comprise at least one first intensity measurement value (I fl1 (|B|)) of the first fluorescence intensities (I fl1 (|B|)) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B|)) of the second fluorescence intensities (I fl2(|B|)) of the first sensor element (SE1) and each comprise at least one first delay measured value and each comprise at least one second delay measured value. Alternatively or simultaneously, a measured value vector can particularly preferably each comprise exactly one first intensity measured value and each comprise exactly one second intensity measured value and each comprise exactly one first delay measured value and each comprise exactly one second delay measured value. Variant 16 In variant 16, the computer system (RSYS) comprises one or more memories (MEM) with a program code stored there at least temporarily. The computer core (μC) is then preferably configured to read and execute this program code when it executes the said computer- and / or machine-implemented method for mapping one or more measured value vectors to a measured value of the electrical current (I LTG) in the conductor (LTG). Preferably, the memory (MEM) can be at least partially a writable memory (MEM) in which the program code and / or parts of the program code and / or data and / or calibration data can be stored as a computer program product. Parts of the memory can also be designed, for example, as mechanically replaceable memories, at least temporarily. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 19 / 109, wherein these mechanically replaceable memories can then contain the program code and / or data and / or calibration data, so that they can then form a computer program product. This makes the current sensor more flexible and enables adaptation of the current sensor hardware to the respective application as well as easy mechanical and secure exchange of billing data and the like via a sealable memory removal and insertion opening.Variant 17 In the 17th variant of the current sensor, the document presented here proposes that the computer and / or machine-implemented method for mapping one or more measured value vectors to a measured value of the electrical current (I. LTG ) in the conductor (LTG) comprises a computer- and / or machine-implemented method of artificial intelligence, wherein one or more output values ​​of the computer- and / or machine-implemented method are used to map one or more measured value vectors to a measured value of the electric current (I LTG ) in the conductor (LTG) one or more measured values ​​of the electric current (I LTG) in the leader (LTG). Such artificial intelligence methods can include, for example: 1. Neural Networks (Deep Learning) Description: Use of multi-layer networks for pattern recognition in complex, non-linear data, as here. Advantages: Automatic extraction of relevant features. Powerful with non-linear and high-dimensional data, as here, flexibility for simultaneous use of other different data types (e.g. images, signals, text). 2. Decision Trees Description: Hierarchical structure for classification or regression based on decision rules. Advantages: Easy to interpret and visualize. Fast calculations. No need for extensive data preprocessing. 3. Random Forests Description: Ensemble method that combines several decision trees. Advantages: High accuracy through aggregation, robustness against overfitting, effective with large data sets.This method is listed only for the sake of completeness. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 20 / 109 4. Support Vector Machines (SVM) Description: Finding an optimal cutoff line (or hyperplane) for classification or regression. Advantages: Well suited for small to medium-sized data sets. Effective for high-dimensional data, especially when using a large number of sensor elements (SE1 to SE2). n). Flexible due to kernel functions. 5. Artificial Neural Networks (ANN) Description: General neural structures for modeling and analyzing measurement data. Advantages: Universally applicable for nonlinear problems, as here. Can be trained adaptively. Enables real-time applications, which may be relevant here. 6. Clustering (e.g., K-Means, DBSCAN) Description: Unsupervised learning for grouping similar data points. Advantages: Efficient for pattern discovery in unlabeled data. Scalable for large data sets. Provides qualitative insights into the data structure. This method is listed only for the sake of completeness. 7. Principal Component Analysis (PCA) Description: Reduction of data complexity by extracting the most important dimensions. Advantages: Reduces computational effort and memory requirements. Facilitates the analysis of high-dimensional data. Robust against noise. This may be necessary when using a large number of sensor elements (SE1 to SE n) relevant and since they contain sensor elements (SE1 to SE n) noise. 8. Bayesian Methods Description: Probability-based approaches to data analysis and modeling. Advantages: Ability to model uncertainties. Flexibility in integrating prior knowledge. Effective with small data sets. These points can apply to current sensor applications, which is why an application of this technical theory should be examined in subsequent work. 9. Reinforcement Learning Description: Learning through interaction with the environment and feedback from rewards. Advantages: Self-learning without extensive prior data knowledge. Effective for time-dependent problems. Adaptable to dynamic systems. This method is only mentioned for the sake of completeness, since a current sensor requiring feedback is likely only useful in special cases.Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 21 / 109 Variant 18 When developing the proposed current sensor, a current sensor was tested which uses a computer and / or machine-implemented method for mapping one or more measured value vectors onto a measured value of the electrical current (I. LTG ) in the conductor (LTG) comprised a computer and / or machine-implemented neural network model, the input values ​​of which at least partially comprised one or more measured value vectors and one or more output values ​​of which at least partially comprised one or more measured values ​​of the electric current (I LTG) in the conductor (LTG). This is a particularly good method for adapting the process parameters using the series data of a large number of current sensors and thus preparing for series production. The document presented here suggests using more than two sensor elements (SE1 to SE n ) in the respective current sensor. Variant 19 In addition to the measured value of the electrical current (I LTG) in the line (LTG), other measured values ​​may also be of interest. The document presented here therefore proposes a current sensor in which the one or more output values ​​comprise one or more first measured values ​​of a, in particular optionally averaged, first temperature ( 1(t)), in particular of the first NV centers (NV1) and / or first paramagnetic centers (NV1) of the first sensor element (SE1), and / or one or more second measured values ​​of a, in particular optionally averaged, second temperature ( 2(t)), in particular of the second NV centers (NV2) and / or second paramagnetic centers (NV2) of the second sensor element (SE2), and / or one or more second measured values ​​of a common temperature ( (t)), in particular of the first and second NV centers (NV1, NV2) and / or first and second paramagnetic centers (NV1, NV2) of the first and second sensor elements (SE2, SE2). This has the advantage that these values ​​can be processed elsewhere.Thus, an electronic fuse based on such a current sensor can also be used as a temperature fuse. The document presented here suggests using more than two sensor elements (SE1 to SE2) in this case. n ) in the current sensor. Variant 20 In addition to the measured value of the electric current (I LTG) in the line (LTG), other measured values ​​may also be of interest. The document presented here therefore proposes a current sensor Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 22 / 109, in which the one or more output values ​​comprise one or more measured values ​​of an amount of a magnetic flux density (B) and / or the amount of the first magnetic flux density (B1) and / or the amount of the second magnetic flux density (B2). This has the advantage that external static and quasi-static magnetic fields acting on the current sensor from the outside can be detected. The document presented here proposes, in this case, more than two sensor elements (SE1 to SE n ) in the current sensor. Variant 21 In addition to the computer and / or machine-implemented methods for evaluating the fluorescence intensity values ​​(I fl1 (|B|) and I fl2(|B|)) of the sensor elements (SE1, SE2), the document presented here also proposes analytical evaluation using machine- and / or computer-implemented algorithms. The technical teaching presented here assumes, firstly, that the attenuation curve (Ifl1(|B1(ILTG)|) of the first fluorescence intensity (Ifl1(|B1(ILTG)|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) compared to a maximum first fluorescence intensity (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) comprises a first fluorescence intensity range (FIB11) in which each first fluorescence intensity value of the first fluorescence intensity (I fl1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG)) of the isotropic first sensor element (SE1) two first values ​​of the magnitude of the first magnetic flux density (B1(I LTG )) and thus two first values ​​of the electric current (I LTG ) in the line (LTG). Secondly, the technical theory presented here assumes that the attenuation curve (Ifl1(|B1(ILTG)|) of the first fluorescence intensity (Ifl1(|B1(ILTG)|) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) compared to a maximum first fluorescence intensity (I flmax1 (|B1|)) of the first fluorescence radiation (FL1) of the isotropic first sensor element (SE1) comprises a first second fluorescence intensity range (FIB21), in which each first fluorescence intensity value of the first fluorescence intensity (I fl1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG)) of the isotropic first sensor element (SE1) exactly a first value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus exactly a first value of the electric current (I LTG ) in the line (LTG). Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 23 / 109 Thirdly, the technical teaching presented here assumes that the attenuation curve (Ifl2(|B2(ILTG)|) of the second fluorescence intensity (Ifl2(|B2|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) compared to a maximum second fluorescence intensity (I flmax2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2) of the isotropic second sensor element (SE2) comprises a second first fluorescence intensity range (FIB12), in which each second fluorescence intensity value of the second fluorescence intensity (Ifl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) two values ​​of the magnitude of the second magnetic flux density (B2(I LTG )) and thus two second values ​​of the electric current (I LTG ) in the line (LTG). The technical teaching presented here assumes, fourthly, that where the curve of the attenuation (Ifl2(|B2(ILTG)|) of the second fluorescence intensity (Ifl2(|B2(ILTG)|) as a function of the line current (I LTG ) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) compared to a maximum first fluorescence intensity (I flmax1 (|B(I LTG )|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) comprises a second second fluorescence intensity range (FIB22) in which each second fluorescence intensity value of the second fluorescence intensity (Ifl2 |)) of the second fluorescence radiation (FL2(I LTG )) of the second sensor element (SE2) exactly a second value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus exactly a second value of the electric current (I LTG ) in the line (LTG). The technical teaching presented here assumes, fifthly, that the attenuation curve (Ifl1(|B1(ILTG)|)) of the first fluorescence intensity (Ifl1(|B1(ILTG)|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) a first region (BB11) of the first magnetic flux density (B1(I LTG )) where the value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus the proportional line current (I LTG) as a function ILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|)))(with K1as the first calibration constant) continuously from 0A to a first reversal point (I LTG1u ) at a maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) in the first fluorescence intensity range (FIB11). This curve section is preferably implemented by a computer- or machine-implemented polynomial approximation or a computer- or machine-implemented table model in the current sensor. Sixthly, the technical teaching presented here assumes that the attenuation curve (Ifl2(|B2(ILTG)|)) of the second fluorescence intensity (Ifl2(|B2(ILTG)|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) as a function of the line current (I LTG) a second first region (BB12) of the second magnetic flux density (B2(I LTG )) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|)))(with K2as the second calibration constant) continuously from 0A to a second reversal point (I LTG2u ) at a maximum second fluorescence intensity (I flmax2 (|B2(I LTG)|)) in the second first fluorescence intensity range (FIB12). This curve section is preferably realized by a computer- or machine-implemented polynomial approximation or a computer- or machine-implemented table model in the current sensor. The technical teaching presented here assumes, seventhly, that the attenuation curve (Ifl1(|B1(ILTG)|)) of the first fluorescence intensity (Ifl1(|B1(ILTG)|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) a first second region (BB21) of the first magnetic flux density (B1(I LTG )) where the value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus the proportional line current (I LTG) as a function ILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|)))(with K1as the first calibration constant) continuously from the first reversal point (I LTG1u ) at the maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) up to a first transition current value (I LTG1ü ) in the first fluorescence intensity range (FIB11). This curve section is preferably realized by a computer- or machine-implemented polynomial approximation or a computer- or machine-implemented table model in the current sensor. The technical teaching presented here assumes that the attenuation curve |)) of the second fluorescence intensity (Ifl2(|B2(ILTG)|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) as a function of the Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 25 / 109 line current (I LTG) a second second region (BB22) of the second magnetic flux density (B2(I LTG )) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|)))(with K2as the second calibration constant) continuously from the second reversal point (I LTG2u ) at the maximum second fluorescence intensity (I flmax2 (|B2(I LTG )|)) up to a second transition current value (I LTG2ü) in the second first fluorescence intensity range (FIB12). This curve section is preferably realized by a computer- or machine-implemented polynomial approximation or a computer- or machine-implemented table model in the current sensor. The technical teaching presented here assumes, for the ninth point, that the attenuation curve (Ifl1(|B1(ILTG)|)) of the first fluorescence intensity (Ifl1(|B1(ILTG)|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) a first third region (BB31) of the first magnetic flux density (B1(I LTG )) where the value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus the proportional line current (I LTG) as a function ILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|)))(with K1as the first calibration constant) continuously from the value of the first transition current value (I LTG1ü ) up to the maximum detectable first current value (I LTG1max ), corresponding to a maximum detectable first magnetic flux density (B 1max (I LTG )) in the first second fluorescence intensity range (FIB21), in particular substantially linearly. This curve section is preferably realized by a computer- or machine-implemented linear approximation or a computer- or machine-implemented table model in the current sensor. In this case, the technical teaching presented here assumes, for the ninth, that the curve of the attenuation (Ifl2(|B2(ILTG)|)) of the second fluorescence intensity (Ifl2(|B2(ILTG)|)) of the second fluorescence radiation (FL2) of the isotropic second sensor element (SE2) as a function of the line current (I LTG) a second third region (BB32) of the second magnetic flux density (B2(I LTG )) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))) Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 26 / 109 (with K2 as the second calibration constant) continuously from the value of the second transition current value (I LTG2ü ) up to the maximum detectable second current value (I LTG2max ), corresponding to a second maximum detectable magnetic flux density (B 2max (I LTG)) in the second second fluorescence intensity range (FIB22), in particular substantially linearly. This curve section is preferably realized by a computer- or machine-implemented linear approximation or a computer- or machine-implemented table model in the current sensor. The technical teaching presented here proposes that the current sensor is configured such that the first transition current value (I LTG1ü) for the isotropic first sensor element (SE1) is located within the first second region (BB21) of the second sensor element (SE2) (formula BB11+BB12B21). This has the advantage that the ambiguity of the fluorescence intensity / flux density curve for low magnetic flux densities can be overcome. Variant 22 Variant 22 corresponds to variant 21 with the exception of the last paragraph. One thus obtains variant 22 by changing the paragraph “The technical teaching presented here proposes that the current sensor is designed so that the first transition current value (I LTG1ü ) for the isotropic first sensor element (SE1) is within the first second area (BB21) of the and replaced by the following description of this variant 22: According to the proposal of variant 22, the current sensor is preferably designed to firstly (applicable condition) measure the current intensity of the electric current (I LTG) in the line (LTG) using the first fluorescence intensity (I fl 1(|B1(I LTG )|)) of the first sensor element (SE1) when the first fluorescence intensity (I fl 1(|B1(I LTG )|)) is located in the first fluorescence intensity range (FIB11) of the first isotropic sensor element (SE1), and secondly (negated condition), if the first fluorescence intensity (I fl 1(|B1(I LTG )|)) is located in the first second fluorescence intensity range (FIB21) of the first isotropic sensor element (SE1), the current intensity of the electric current (I LTG ) in the line (LTG) by means of the second fluorescence intensity (I fl2 (|B2(I LTG )|)) of the isotropic second sensor element (SE2). This requires that the sensor system is configured so that under this condition the second magnetic flux density (B2(I LTG)) is located in the second first region (BB12) of the isotropic second sensor element (SE2). This results in a machine- and / or computer-implementable method 100 for determining the value of the current intensity of the electrical line current (I LTG ) in the line (LTG) for such a current sensor starting 110 with the first step 120 of detecting the first intensity value of the first fluorescence intensity (Ifl1(B1(I LTG))) of the first isotropic sensor element (SE1) followed by the second step 130 of checking whether the first intensity value is in the first fluorescence intensity range (FIB11) of the first isotropic sensor element (SE1), wherein the third step 140 follows if this is the case and otherwise the fourth step 150 follows. In the third step 140 of the computer- and / or machine-implementable method 100 for determining the value of the current intensity of the electrical line current (I LTG ) in the line (LTG) for such a current sensor, the method determines the current intensity of the electric current (I LTG ) in the line (LTG) using the first fluorescence intensity (I fl 1(|B1(I LTG)|)) of the first sensor element (SE1), for example by means of the machine- and / or computer-implemented formula ILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|))).The sixth step 170 then follows. In the fourth step 150 of the computer- and / or machine-implementable method 100 for determining the value of the current intensity of the electrical line current (I LTG ) in the line (LTG) for such a current sensor, the second intensity value of the second fluorescence intensity (I fl2 (B1(I LTG ))) of the second isotropic sensor element (SE2) followed by the fifth step 160 of determining the current intensity of the electric current (I LTG ) in the line (LTG) using the wide fluorescence intensity (I fl2 (|B2(I LTG)|)) of the second sensor element (SE2), for example by means of the machine- and / or computer-implemented formula ILTG=K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))).In the sixth step 170, the method outputs the determined value of the current intensity of the line current (I LTG) in the line (LTG) and / or stores it in a memory (MEM) and / or keeps it, in particular in a memory, ready for further use and / or uses it and / or transmits it via a data interface (DBINF) and a data transmission channel (EXTDB) to a higher-level computer or another computer system. This completes the method. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 28 / 109 The great advantage is that the ambiguity of the fluorescence intensity of an individual sensor element (SE1) in the second fluorescence intensity range (FIB21), which is for low currents of the electrical line current (I LTG) in the line (LTG) can be clearly resolved. This eliminates the use of permanent magnets to stabilize an operating point of the first sensor element (SE1), which also typically leads to thermal drift and requires an expensive calibration process. Use as a power sensor The document presented here proposes a power sensor based on the previously described current sensor for the, in particular shunt-resistance-free, detection of the electrical power (P LTG ). The proposed power sensor comprises at least one current sensor as described above. This is designed to measure one or more current values ​​of the electric current (I LTG) through the electrical line (LTG). The power sensor and / or the current sensor typically have means (RSYS) that are designed to calculate the current values ​​of the electrical current (I LTG) in the electrical line (LTG) and one or more further respective values. This has the advantage that a power measurement is possible thermally and / or electrically insulated from the line (LTG) and without changing the electrical properties of the line. Variant 1 of the power sensor In variant 1 of the power sensor, the power sensor measures the power flowing through the line (LTG).25. Power sensor, in particular according to feature 24. For this purpose, the power sensor preferably comprises a voltage measuring device (VM) which is designed to detect the voltage between the line (LTG) and a reference potential connection and / or a reference potential line (GNDref), which can be identical to the reference potential line (GND), as one or more voltage values ​​(V(t)). This voltage value orThese voltage values ​​(V(t)) are referred to in the document presented here below as the one or more further respective values. Preferably, the power sensor and / or the current sensor have means (RSYS) configured to determine the current values ​​of the electrical current (I) from the one or more detected voltage values ​​and the one and / or one or more detected amounts. LTG ) in the electrical line (LTG) one or more values ​​of the electrical power (P) transported in the line (LTG) Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 29 / 109 LTG) using a computer and / or machine-implemented method. This has the advantage that, firstly, the power can be measured in a thermally and / or electrically insulated manner and, secondly, no intervention in the line (LTG), for example through a shunt resistor in the line (LTG) or an additional inductance in the line, is required. Thirdly, the speed of the power measurement is extremely high due to the high cut-off frequency of the paramagnetic centers (for NV centers in diamond at approx. 1 MHz) and higher than with state-of-the-art power meters that do not require any intervention in the line. Variant 2 of the power sensor In variant 2 of the power sensor, the power sensor measures the power flowing through the line (LTG).For this purpose, the power sensor preferably comprises a voltage measuring device (VM) which is designed to detect the voltage between the line (LTG) and a reference potential connection and / or a reference potential line (GNDref), which can be identical to the reference potential line (GND), as one or more voltage values ​​(V(t)). This voltage value or these voltage values ​​(V(t)) are referred to in the document presented here below as the one or more further, respective values. According to the proposal, the power sensor and / or the current sensor have means (RSYS) which are designed to determine the intensity (I) from the one or more detected voltage values ​​and the one or more detected intensity values. fl (t)) of the fluorescence radiation (FL) and / or from the one or more detected values ​​of the electric current (I LTG) and / or from one or more recorded intensity values ​​of the intensity (I fl (t)) of the fluorescence radiation (FL) and / or from one or more recorded delay values ​​of the temporal course of the intensity (I fl (t)) of the fluorescence radiation (FL) versus the time course of the intensity (I pmp (t)) of the pump radiation (LB) one or more values ​​of the electrical power (P LTG) or to estimate it. This simplifies the design compared to variant 1 of the power sensor. Variant 3 of the power sensor with power estimation After the two previous variants of the power sensor measured the power, a variant that estimates the power is now presented. This saves the voltage measurement, which typically requires electrical contact to the conductor (LTG) and therefore disrupts the galvanic isolation. The solution presented here avoids this. Preferably, the power sensor or current sensor, as described above, has one or more memories (MEM) in which one or more Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 30 / 109 resistance values ​​or conductance values ​​are stored. The proposed power sensor orthe current sensor has means (RSYS) which are designed to determine one or more values ​​of the electrical power (P) transported in the line (LTG) from the one or more stored resistance values ​​and the one and from the one or more amounts of the current values ​​of the electrical current (ILTG) in the electrical line (LTG) detected by the proposed current sensor of the power sensor. LTG) to determine or estimate. To do this, the power sensor can square the detected current value using a computer and / or machine-implemented method and multiply it by the estimated resistance value of the line and / or the downstream consumers and / or divide it by their conductance. This method can be shortened by converting the fluorescence intensity values ​​directly into a power value. Variant 4 of the power sensor with direct power estimation Preferably, the power sensor proposed in this variant comprises a current sensor as described above, or the power sensor proposed in this variant is such a sensor. Again, the power sensor in this variant comprises one or more memories (MEM) in which one or more resistance values ​​or conductance values ​​are stored as the one or more further respective values.According to the proposal, the power sensor and / or the current sensor have means (RSYS) which are designed to determine from this one or more respective further values ​​and the one or more recorded intensity values ​​of the intensity (I. fl (t)) of the fluorescence radiation (FL) and / or from the one or more values ​​of the electric current (I LTG ) one and / or from one or more of the recorded intensity values ​​of the intensity (I fl (t)) of the fluorescence radiation (FL) and / or from the several recorded delay values ​​of the temporal course of the intensity (I fl (t)) of the fluorescence radiation (FL) versus the time course of the intensity (I pmp (t)) of the pump radiation (LB) one or more values ​​of the electrical power (P LTG ) to be determined or estimated. This avoids the detour of calculating the electric current (I LTG). Variant 5 of the power sensor Preferably, the power sensor proposed here in this variant comprises a current sensor as described above, or the power sensor proposed here in this variant is such a current sensor. Preferably, the power sensor comprises, as such a means (RSYS), a computer system (RSYS) with a computer core (μC). Preferably, the computer core (μC) is configured to implement a computer- and / or machine-implemented method for mapping one or more measured value vectors onto a measured value of the electrical power (P) transported in the conductor (LTG). LTG ). In a first possible case, a measured value vector comprises at least one first intensity measured value (I fl1 (|B(I LTG )|)) of the first fluorescence intensities (I fl1 (|B(I LTG)|)) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B(I LTG )|)) of the second fluorescence intensities (I fl2 (|B(I LTG )|)) of the first sensor element (SE1) and each comprise at least one voltage measurement value and / or in a second possible case each comprise at least one first intensity measurement value (I fl1 (|B(I LTG )|)) of the first fluorescence intensities (I fl1 (|B(I LTG )|)) of the first sensor element (SE1) and each comprise at least one first deceleration measurement value and each comprise at least one voltage measurement value and / or in a third possible case each comprise at least one first deceleration measurement value and each comprise at least one second deceleration measurement value and each comprise at least one voltage measurement value and / or in a fourth possible case each comprise at least one first intensity measurement value (I fl1 (|B(I LTG)|)) of the first fluorescence intensities (I fl1 (|B(I LTG )|)) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B(I LTG )|)) of the second fluorescence intensities (I fl2 (|B(I LTG )|)) of the first sensor element (SE1) and each comprise at least one first deceleration measurement value and each comprise at least one voltage measurement value and / or in a fifth possible case each comprise at least one first intensity measurement value (I fl1 (|B(I LTG )|)) of the first fluorescence intensities (I fl1 (|B(I LTG )|)) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B(I LTG )|)) of the second fluorescence intensities (I fl2 (|B(I LTG)|)) of the first sensor element (SE1) and each comprise at least one second deceleration measurement value and each comprise at least one voltage measurement value and / or in a sixth possible case each comprise at least one first intensity measurement value (I fl1 (|B(I LTG )|)) of the first fluorescence intensities (I fl1 (|B(I LTG)|)) of the first sensor element (SE1) and each comprise at least one first delay measurement value and each comprise at least one second delay measurement value and each comprise at least one voltage measurement value and / or Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 32 / 109 in a seventh possible case, each comprise at least one second intensity measurement value (Ifl2(|B(ILTG)|)) of the second fluorescence intensities (Ifl2(|B(ILTG)|)) of the first sensor element (SE1) and each comprise at least one first delay measurement value and each comprise at least one second delay measurement value and each comprise at least one voltage measurement value and / or in an eighth possible case, each comprise at least one first intensity measurement value (I fl1 (|B(I LTG )|)) of the first fluorescence intensities (I fl1 (|B(I LTG )|)) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B(I LTG)|)) of the second fluorescence intensities (I fl2 (|B(I LTG)|)) of the first sensor element (SE1) and each comprise at least one first deceleration measurement value and each at least one second deceleration measurement value and each at least one voltage measurement value. Alternatively or simultaneously, a measured value vector can particularly preferably each comprise exactly one first intensity measurement value and each exactly one second intensity measurement value and each exactly one first deceleration measurement value and each exactly one second deceleration measurement value and each at least one voltage measurement value. This has the advantage of directly measuring the power. Variant 6 of the power sensor In this variant of the power sensor, the computer system (RSYS) comprises one or more memories (MEM) with a program code stored there at least temporarily.In this variant, the computer core (μC) is preferably configured to read and execute this program code when it executes the said computer- and / or machine-implemented method for mapping one or more measured value vectors onto a measured value of the electrical power (P) transported in the conductor (LTG). LTG). Preferably, the memory (MEM) can be at least partially a writable memory (MEM) in which the program code and / or parts of the program code and / or data and / or calibration data can be stored as a computer program product. Parts of the memory can also be designed, for example, as mechanically replaceable memories, at least temporarily, wherein these mechanically replaceable memories can then contain the program code and / or data and / or calibration data stored therein, so that they can then form a computer program product. This makes the power sensor more flexible and enables adaptation of the power sensor hardware to the respective application as well as easy mechanical and secure exchange of billing data and the like via a sealable memory removal and insertion opening.Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 33 / 109 Variant 7 of the power sensor In the 7th variant of the power sensor, the computer and / or machine-implemented method for mapping one or more measured value vectors to a measured value of the electrical power (P) transported in the conductor (LTG) comprises. LTG ) a computer and / or machine-implemented method of artificial intelligence, wherein one or more input values ​​of the computer and / or machine-implemented method for mapping one or more measured value vectors to a measured value of the electrical power (P LTG) comprising said one or more measured value vectors and wherein one or more output values ​​of the computer- and / or machine-implemented method for mapping one or more measured value vectors to a measured value of the electrical power (P LTG ) one or more measured values ​​of the electrical power (P LTG). This has the advantage that the power sensor, due to the high processing speed resulting from the use of paramagnetic centers, can deliver the power measurements very quickly, especially in the case of a power estimation without violating the galvanic and / or thermal isolation. (NV centers have a cutoff frequency in the order of 1 MHz.) Variant 8 of the power sensor In the 8th variant, the document presented here proposes a power sensor in which the computer- and / or machine-implemented method for mapping one or more measurement value vectors to a measurement value of the electrical power (P LTG ) comprises a computer and / or machine-implemented neural network model, the input values ​​of which are one or more measured value vectors and the one or more output values ​​of which are one or more measured values ​​of the electrical power (PLTG ). This has the advantage that structural peculiarities of the power sensor are learned at the same time. The document presented here refers to the sections on the use of computer- and / or machine-implemented methods of artificial intelligence and / or computer- and / or machine-implemented neural networks in connection with the current sensor (in particular its variant 17), which apply here in an analogous manner. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 34 / 109 Variant 9 of the power sensor In addition to the computer- and / or machine-implemented methods for evaluating the fluorescence intensity values ​​(I fl1 (|B|) and I fl2 (|B|)) of the sensor elements (SE1, SE2), the document presented here also proposes the analytical evaluation using machine and / or computer-implemented algorithms to determine the power (P LTG). The technical theory presented here assumes, firstly, that the attenuation curve the first fluorescence intensity the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) compared to a maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) comprises a first fluorescence intensity range (FIB11) in which each first fluorescence intensity value of the first fluorescence intensity (I fl1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) two first values ​​of the magnitude of the first magnetic flux density (B1(I LTG )) and thus two first values ​​of the electric current (I LTG) in the line (LTG). Secondly, the technical theory presented here assumes that the attenuation curve (Ifl1(|B1(ILTG)|) of the first fluorescence intensity (Ifl1(|B1(ILTG)|) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) compared to a maximum first fluorescence intensity (I flmax1 (|B1|)) of the first fluorescence radiation (FL1) of the isotropic first sensor element (SE1) comprises a first second fluorescence intensity range (FIB21), in which each first fluorescence intensity value of the first fluorescence intensity (I fl1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) exactly a first value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus exactly a first value of the electric current (I LTG) in the line (LTG). Thirdly, the technical teaching presented here assumes that the attenuation curve (Ifl2(|B2(ILTG)|) of the second fluorescence intensity (Ifl2(|B2|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) compared to a maximum second fluorescence intensity (I flmax2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2) of the isotropic second sensor element (SE2) comprises a second first fluorescence intensity range (FIB12), in which every second fluorescence intensity value of the second fluorescence intensity (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) two values ​​of the magnitude of the second magnetic flux density (B2(I LTG)) and thus two second values ​​of the electric current (I LTG ) in the line (LTG). The technical teaching presented here assumes, fourthly, that where the curve of the attenuation (Ifl2(|B2(ILTG)|) of the second fluorescence intensity (Ifl2(|B2(ILTG)|) as a function of the line current (I LTG ) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) compared to a maximum first fluorescence intensity (I flmax1 (|B(I LTG )|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) comprises a second second fluorescence intensity range (FIB22) in which each second fluorescence intensity value of the second fluorescence intensity (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2(I LTG )) of the second sensor element (SE2) exactly a second value of the magnitude of the second magnetic flux density (B2(I LTG)) and thus exactly a second value of the electric current (I LTG ) in the line (LTG). The technical teaching presented here assumes, fifthly, that the attenuation curve (Ifl1(|B1(ILTG)|)) of the first fluorescence intensity (Ifl1(|B1(ILTG)|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) a first region (BB11) of the first magnetic flux density (B1(I LTG )) at which the value of the power (P LTG ) as a function PLTG=RLTG*ILTG²= RLTG* [K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|)))]²(with K1as the first calibration constant and R LTG as resistance estimate) continuously from 0W to a first reversal point (I LTG1u) increases at a maximum first fluorescence intensity (Iflmax1(|B1(ILTG)|)) in the first fluorescence intensity range (FIB11). This curve section is preferably realized by a computer- or machine-implemented polynomial approximation or a computer- or machine-implemented table model in the power sensor. Sixthly, the technical teaching presented here assumes that the attenuation curve (Ifl2(|B2(ILTG)|)) of the second fluorescence intensity (Ifl2(|B2(ILTG)|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) a second first region (BB12) of the second magnetic flux density (B2(I LTG )) at which the value of the power (P LTG) as a function Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 36 / 109 PLTG=RLTG*ILTG²= RLTG* [K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))) ]²(with K2 as second calibration constant and RLTG as resistance estimate) continuously from 0W to a second reversal point (I LTG2u ) at a maximum second fluorescence intensity (I flmax2 (|B2(I LTG )|)) in the second first fluorescence intensity range (FIB12). This curve section is preferably realized by a computer- or machine-implemented polynomial approximation or a computer- or machine-implemented table model in the power sensor. The technical teaching presented here assumes, seventhly, that the attenuation curve (Ifl1(|B1(ILTG)|)) of the first fluorescence intensity (Ifl1(|B1(ILTG)|)) of the first fluorescence radiation (FL1(I LTG)) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) a first second region (BB21) of the first magnetic flux density (B1(I LTG )) at which the value of the power (P LTG ) as a function PLTG=RLTG*ILTG²= RLTG* [K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|)))]²(with K1as the first calibration constant and R LTG as resistance estimate) continuously from the first reversal point (I LTG1u ) at the maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) up to a first transition current value (I LTG1ü) in the first fluorescence intensity range (FIB11). This curve section is preferably realized by a computer- or machine-implemented polynomial approximation or a computer- or machine-implemented table model in the power sensor. The technical teaching presented here assumes that the attenuation curve (Ifl2(|B2(ILTG)|)) of the second fluorescence intensity (Ifl2(|B2(ILTG)|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) a second second region (BB22) of the second magnetic flux density (B2(I LTG )) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG ) as a function PLTG=RLTG*ILTG²= RLTG* [K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))) ]²(with K2as the second calibration constant and RLTG as resistance estimate) continuously from the second reversal point (I LTG2u ) at the maximum second fluorescence intensity (I flmax2 (|B2(I LTG )|)) up to a second transition current value (I LTG2ü ) in the second first fluorescence intensity range (FIB12). This curve section is preferably realized by a computer- or machine-implemented polynomial approximation or a computer- or machine-implemented table model in the power sensor. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 37 / 109 The technical teaching presented here assumes, ninthly, that the attenuation curve (Ifl1(|B1(ILTG)|)) of the first fluorescence intensity (Ifl1(|B1(ILTG)|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG) a first third region (BB31) of the first magnetic flux density (B1(I LTG )) at which the value of the power (P LTG ) as a function PLTG=RLTG*ILTG²= RLTG* [K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|)))]²(with K1as the first calibration constant and R LTG as resistance estimate) continuously from the value of the first transition current value (I LTG1ü ) up to the maximum detectable first current value (I LTG1max ), corresponding to a maximum detectable first magnetic flux density (B 1max (I LTG)) in the first second fluorescence intensity range (FIB21), in particular substantially linearly. This curve section is preferably realized by a computer- or machine-implemented parabolic approximation or a computer- or machine-implemented table model in the power sensor. The technical teaching presented here assumes, ninthly, that the attenuation curve (Ifl2(|B2(ILTG)|)) of the second fluorescence intensity (Ifl2(|B2(ILTG)|)) of the second fluorescence radiation (FL2) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) a second third region (BB32) of the second magnetic flux density (B2(I LTG )) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG) as a function PLTG=RLTG*ILTG²= RLTG* [K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))) ]²(with K2as the second calibration constant and R LTG as resistance estimate) continuously from the value of the second transition current value (I LTG2ü ) up to the maximum detectable second current value (I LTG2max ), corresponding to a second maximum detectable magnetic flux density (B 2max (I LTG )) in the second second fluorescence intensity range (FIB22), in particular substantially linearly. This curve section is preferably realized by a computer- or machine-implemented parabolic approximation or a computer- or machine-implemented table model in the power sensor. The technical teaching presented here proposes that the power sensor is configured such that the first first transition current value (I LTG1ü) for the isotropic first sensor element (SE1) is located within the first second region (BB21) of the second sensor element (SE2) (formula BB11 + BB12B21). This has the advantage that the ambiguity of the fluorescence intensity / flux density curve for low magnetic flux densities can be overcome. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 38 / 109 Variant 10 of the power sensor Variant 10 of the power sensor corresponds to variant 9 of the power sensor with the exception of the last paragraph. Thus, variant 10 of the power sensor is obtained by changing the paragraph “The technical teaching presented here proposes that the current sensor is designed so that the first transition current value (I LTG1ü ) for the isotropic first sensor element (SE1) is located within the first second area (BB21) of the second sensor element (SE2) (formula BB11+ ” and replaced by the following description of this variant 10 of the power sensor: According to the proposal of variant 10 of the power sensor, preferably the power sensor sensor is configured to firstly (applicable condition) measure the transported power (P LTG ) in the line (LTG) using the first fluorescence intensity (I fl 1(|B1(I LTG )|)) of the first sensor element (SE1) when the first fluorescence intensity (I fl 1(|B1(I LTG )|)) is located in the first fluorescence intensity range (FIB11) of the first isotropic sensor element (SE1), and secondly (negated condition), if the first fluorescence intensity (I fl 1(|B1(I LTG )|)) is located in the first second fluorescence intensity range (FIB21) of the first isotropic sensor element (SE1), the current intensity of the electrical current (ILTG) in the line (LTG) by means of the second fluorescence intensity (I fl2 (|B2(ILTG )|)) of the isotropic second sensor element (SE2) and from this, for example by means of a resistance estimate (R LTG ) the power (P LTG =R LTG * I fl2 (|B2(I LTG )|)). This requires that the sensor system is set up so that under this condition the second magnetic flux density (B2(I LTG )) is located in the second first region (BB12) of the isotropic second sensor element (SE2). This results in a machine- and / or computer-implementable method for determining the value of the power (P LTG ) for such a power sensor starting with the first step of detecting the first intensity value of the first fluorescence intensity (Ifl1(B1(I LTG))) of the first isotropic sensor element (SE1) followed by the second step of checking whether the first intensity value is in the first fluorescence intensity range (FIB11) of the first isotropic sensor element (SE1), wherein the third step follows if this is the case and otherwise the fourth step follows. In the third step of the computer- and / or machine-implementable method for determining the value of the power (P) transported in the line (LTG), LTG ) for such a power sensor, the method determines the value of the power transported in the line (LTG) Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 39 / 109 (P LTG ) using the first fluorescence intensity (I fl 1(|B1(I LTG )|)) of the first sensor element (SE1), for example by means of the machine- and / or computer-implemented formula PLTG=RLTG*ILTG²= RLTG* [K1*B1(ln(- (with K1 as the first calibration constant and R LTG as a resistance estimate). The sixth step then follows. In the fourth step of the computer- and / or machine-implementable method for determining the value of the current intensity of the electrical line current (I LTG ) in the line (LTG) for such a current sensor, the second intensity value of the second fluorescence intensity (I fl2 (B1(I LTG ))) of the second isotropic sensor element (SE2) followed by the fifth step of determining the value of the power (P LTG ) for such a power sensor, the method determines the value of the power (P LTG ) using the second fluorescence intensity (I fl2 (|B2(I LTG)|)) of the second sensor element (SE2), for example by means of the machine- and / or computer-implemented formula PLTG=RLTG*ILTG²= RLTG* [K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))) ]²(with K2 as the second calibration constant and R LTG as an estimated resistance value). In the sixth step, the method returns the determined value of the power transported in the line (LTG) (P LTG) and / or stores it in a memory (MEM) and / or keeps it, in particular in a memory, ready for further use and / or uses it and / or transmits it via a data interface (DBINF) and a data transmission channel (EXTDB) to a higher-level computer or another computer system. The great advantage is that the ambiguity of the fluorescence intensity of an individual sensor element (SE1) in the second fluorescence intensity range (FIB21), which is used for low power levels, typically associated with low values ​​of the electrical conduction current (I LTG) in the line (LTG), can be clearly resolved. This eliminates the use of permanent magnets to stabilize an operating point of the first sensor element (SE1), which also typically leads to thermal drift and requires an expensive calibration process. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 40 / 109 Use in an electronic fuse The document presented here proposes an electronic fuse with a current sensor, as described above, and / or with a power sensor, as described above. The electronic fuse preferably comprises a control device (CTR) with a computer system (RSYS) with a computer core (μC). The computer core (μC) closes and / or opens depending on one or more determined values ​​of the electrical current (I LTG) in the line (LTG) and / or of one or more determined or estimated values ​​of the electrical power (P LTG ) and / or of one or more values ​​of one or more intensities (|B1(ILTG)|), Ifl2(|B2(ILTG)|)) of one of the several fluorescence radiations (FL1, FL2) of one or more sensor elements of the sensor elements (SE1, SE2) and / or of one or more values ​​of one or more phase delays (fl1(|B1(ILTG)|), (fl2(|B2(ILTG)|),) of the respective temporal course of one or more intensities (I fl1 (|B1(I LTG )|), I fl2 (|B2(I LTG )|)) one of the several fluorescence radiations (FL1, FL2) of one or more sensor elements of the sensor elements (SE1, SE2) against the respective temporal course of the intensity (I pmp(t)) of the pump radiation (LB) and / or one or more values ​​derived therefrom, in particular by logarithmization, squaring and / or temporal integration and / or multiplication by constants and / or other filtering, a switch (T2) which is inserted into the line (LTG). First variant of the electronic fuse As a variant, the document presented here proposes an electronic fuse based on that described above, wherein the electronic fuse is designed to actuate the switch (T2) by means of optical control radiation (SB) with an optical wavelength in the optical wavelength range according to ISO 20473:2007-04 as an optical switching signal.

[0002] Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 41 / 109 List of figures Fig.1 Representation of the dependence of the detected magnetic flux density B, which flows through an isotropic sensor element SE with a multitude of disordered crystals with a multitude of paramagnetic centers Fig.2 Representation of the electric current I LTG in the electrical line LTG depending on the respective deviations (Ifl1(|B1(ILTG)|), Ifl2(|B2(ILTG)|)) of the respective intensity (I fl1 (|B1(I LTG )|), I fl2 (|B2(I LTG )|)) of the respective fluorescence radiation (FL1, FL2) for your first sensor element SE1 and a second sensor element SE2 of a current sensor with two sensor elements Fig.3 Representation of the maximum deviation I flmax (|B(I LTG )|) of the respective intensity (I fl1 (|B1(I LTG )|), I fl2 (|B2(I LTG)|)) of the respective fluorescence radiations (FL1, FL2) of the respective paramagnetic centers of the respective sensor elements (SE1, SE2) for the first and the second sensor element (SE1, SE2), which is subtracted as an offset value from the values ​​of the x-axis Fig. 4 logarithmic representation of Fig. 3 Fig. 5 subdivision of the relationships shown in Fig. 4 into specific areas Fig. 6 schematic representation of the current sensor according to the invention Fig. 7 schematic representation of a magnetic circuit in cross section Fig. 8 exemplary conductor LTG of the current sensor according to the invention for setting the first magnetic flux density B1 and the second magnetic flux density B2 Fig. 9 schematic representation of the conductor LTG for 4 sensor elements (SE1 to SE4) that are placed in the four slots (SL1 to SE4) of four meander loops (MSL1 to MSL4) of the line LTG Fig. 10 schematic representation of a method for determining the current value of the current intensity of the electric current ILTG in the line LTG Fig. 11 schematic representation of a measuring head Fig. 12 perspective view of the measuring head of Fig. 11 without cover HB Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 42 / 109 Fig. 13 schematic, simplified cross-section through an exemplary optically switchable electronic switch T2 with a microelectronically manufactured semiconductor switch BE Description of the Figures The figures explain the proposal schematically and in a simplified manner. The disclosure of the document presented here is not limited to the figures and also includes other combinations. Figure 1 Figure 1 shows the curve of the dependence of the detected magnetic flux density B, which flows through an isotropic sensor element SE with a large number of disordered crystals with a large number of paramagnetic centers, on the deviation I fl (|B|) of intensity I fl(|B|) of the fluorescence radiation FL of the paramagnetic centers in the stochastically uniformly distributed differently oriented crystals of this sensor element SE of the maximum intensity I flmax (|B|) of this fluorescence radiation FL. The curve was measured using a sensor element SE with a large number of disordered diamond crystals as the crystals of the sensor element SE, with NV centers forming the paramagnetic centers. Due to the high NV center density used, an ambiguous range of deviation I occurs. fl (|B|) of the fluorescence intensity I fl (|B|) in the range of low magnetic flux densities B, in which each value of the deviation I fl (|B|) of the fluorescence intensity I fl(|B|) two possible values ​​of the magnitude of the magnetic flux density B are assigned. This area is the second fluorescence intensity range IFB2. To the left of it is the first fluorescence intensity range IFB1, in which each value of the deviation I fl (|B|) of the fluorescence intensity I fl (|B|) is assigned exactly one possible value of the magnetic flux density B. Values ​​of the deviation I fl (|B|) of the fluorescence intensity I fl(|B|) in the first fluorescence intensity range IFB1 are therefore suitable for measuring the magnetic flux density B and thus also for measuring the current value of a line current ILTG in a line LTG. For very low currents, the state of the art provides a bias magnet to increase the magnitude of the magnetic flux density B. However, this causes the current sensor to lose its isotropy, which is critical and requires calibration. It also makes the current sensor sensitive to thermal fluctuations that can lead to distortions in its mechanical structure. For very high magnetic flux densities, the curve converges towards a maximum value of the I flmax (|B|) of the fluorescence intensity I fl(|B|). Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 43 / 109 Figure 2 In an exemplary current sensor, two sensor elements are installed, a first sensor element SE1 and a second sensor element SE2. The current sensor should, for example, be configured to measure the magnetic field of an electric current I LTG In the electrical line LTG, the first sensor element SE1 is flooded with a first magnetic flux density B1 and the second sensor element SE2 is flooded with a second magnetic flux density B2. In the example of Figure 2, the first magnetic flux density B1 to which the first sensor element SE1 is exposed should be greater than the second magnetic flux density B2 to which the second sensor element SE2 is exposed. If one now plots the values ​​resulting from the respective deviations (Ifl1(|B1(ILTG)|), Ifl2(|B2(ILTG)|)) of the respective intensity (I fl1 (|B1(I LTG )|), I fl2 (|B2(I LTG)|)) of the respective fluorescence radiation (FL1, FL2) of the respective paramagnetic centers of the respective sensor element (SE1, SE2) from the respective maximum intensity value (I flmax1 (|B1(I LTG )|) , I flmax2 (|B2(I LTG )|)) the respective fluorescence radiation (FL1, FL2) of the respective paramagnetic centers of the respective sensor element (SE1, SE2) determineable current values ​​of the line current I LTG in the line LTG depending on these respective deviations (Ifl1(|B1(ILTG)|), Ifl2(|B2(ILTG)|)), one obtains the two curves shown in Figure 2 for the first sensor element SE1 and the second sensor element SE2. The Y-axis represents the current values ​​of the line current I LTG in arbitrary units scaled with au. The maximum deviation Iflmax(|B(ILTG)|) of the respective intensity (Ifl1(|B1(ILTG)|), I fl2 (|B2(I LTG)|)) of the respective fluorescence radiations (FL1, FL2) of the respective paramagnetic centers of the respective sensor elements (SE1, SE2) is also the same for both sensor elements (SE1, SE2), if they are essentially the same, as is assumed here. Figure 3 Figure 3 corresponds to Figure 2, with the maximum deviation I flmax (|B(I LTG )|) of the respective intensity (I fl1 (|B1(I LTG )|), I fl2 (|B2(I LTG )|)) of the respective fluorescence radiations (FL1, FL2) of the respective paramagnetic centers of the respective sensor elements (SE1, SE2) is subtracted from the values ​​of the x-axis as an offset value for both sensor elements (SE1, SE2). Note that the value of the maximum deviation I flmax (|B(I LTG)|) in Figure 2 is negative! Figure 4 Figure 4 corresponds to Figure 3, whereby the now logarithmized X values ​​of the X axis of Figure 3 are now used as the X values ​​of the X axis. As is immediately noticeable, both curves have a very linear respective curve section. This means that the detectable current value depends logarithmically on the fluorescence intensity in this fluorescence intensity section. This means that an inversion is possible in this Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 44 / 109 fluorescence intensity section and a current value can be determined from a fluorescence intensity value there. More on this later. Figure 5 Figure 5 corresponds to Figure 4. However, different areas are now shown. In the first fluorescence intensity section FIB1, the curves are reversible; a current value can be determined from a fluorescence intensity value there.This means that a device with two sensor elements (SE1, SE2) can provide two valid measured values ​​for the current intensity of the line current I. LTG in the line LTG. The first valid measured value for the line current I LTG In the line LTG, the system of the proposed current sensor determines from the first fluorescence intensity value of the first fluorescence intensity I fl1 (|B1(I LTG )|) of the first fluorescence radiation FL1 of the first sensor element SE1. The second valid measured value for the current intensity of the line current I LTG In the line LTG, the system of the proposed current sensor determines from the second fluorescence intensity value the second fluorescence intensity I fl2 (|B2(I LTG )|) of the second fluorescence radiation FL2 of the first sensor element SE2. Of course, determining one value is sufficient. However, it is conceivable that n sensor elements SE1 to SE nand then in this first fluorescence intensity section FIB1 n valid measurement value for the current intensity of the conduction current I LTG in the line LTG and then reduce it to a measured value using a statistical method. The first curve, assigned to the first sensor element SE1, forms the first fluorescence intensity value of the first fluorescence intensity I fl1 (|B1(I LTG )|) of the first fluorescence radiation FL1 of the first sensor element SE1, provided that it lies in the first fluorescence intensity section FIB1, to a measured value for the current intensity of the line current I LTG in the line LTG, which in a first third area BB31 of the first magnetic flux density B 1(ILTG) and thus in a corresponding first third range BB31 of the measured value for the current intensity of the line current I LTGin the line LTG for the first sensor element SE1. The second curve, which is assigned to the second sensor element SE2, forms the second fluorescence intensity value of the second fluorescence intensity I fl2 (|B2(I LTG )|) of the second fluorescence radiation FL2 of the second sensor element SE2, provided it lies in the first fluorescence intensity section FIB1, to a measured value for the current intensity of the line current I LTG in the line LTG, which in a second third area BB32 of the second magnetic flux density B2(I LTG ) and thus in a corresponding second third range BB32 of the Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 45 / 109 measured value for the current intensity of the line current I LTGin the line LTG for the second sensor element SE2. As can easily be seen, in both curves in the first fluorescence intensity section FIB1 the measured value for the line current I LTGin the line LTG decreases more or less linearly with increasing value of the expression -ln(- Ifl(|B(ILTG)|) + Iflmax(|B(ILTG)|)). This simplifies the inversion in this first fluorescence intensity section FIB1 considerably. The two curves differ only by a different proportionality constant and a different offset in this first fluorescence intensity section FIB1. These four calibration parameters can be recorded and stored in a memory (MEM) of the current sensor's computer system together with the limit values ​​of the first fluorescence intensity section FIB1, i.e., the limit fluorescence intensity at the transition from the first fluorescence intensity section FIB1 to the second fluorescence intensity section FIB2. The curve of the electric current I LTG in the LTG line depending on the fluorescence intensity I fl (|B(I LTG)|) does not represent a function in the second fluorescence intensity section FIB2, since one X value corresponds to two Y values. Accordingly, the respective curve in this area has two sub-curves, the upper one decreasing with increasing fluorescence intensity Ifl(|B(ILTG)|) and the lower one decreasing with increasing fluorescence intensity I fl (|B(I LTG )|) increases. The upper part of the first curve represents the first fluorescence intensity values ​​I fl1 (|B1(I LTG )|) of the first sensor element SE1, which lie in the first fluorescence intensity section FIB1, to a first second region BB21 of the first magnetic flux density B1(I LTG ) and thus in a corresponding first second range BB21 of the measured value for the current intensity of the line current I LTG in the line LTG for the first sensor element SE1. The lower part of the first curve represents the first fluorescence intensity values ​​I fl1 (|B1(I LTG)|) of the first sensor element SE1, which lie in the first fluorescence intensity section FIB1, to a first region BB11 of the first magnetic flux density B1(I LTG ) and thus in a corresponding first range BB11 of the measured value for the current intensity of the line current I LTG in the line LTG for the first sensor element SE1. The upper part of the second curve represents the second fluorescence intensity values ​​I fl2 (|B2(I LTG )|) of the second sensor element SE2, which lie in the first fluorescence intensity section FIB1, to a second second region BB22 of the second magnetic flux density B2(I LTG ) and thus in a Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 46 / 109 corresponding second range BB22 of the measured value for the current intensity of the line current I LTGin the line LTG for the second sensor element SE2. The lower part of the second curve represents the second fluorescence intensity value I fl2 (|B2(I LTG )|) of the second sensor element SE2, which lie in the first fluorescence intensity section FIB1, to a second first region BB12 of the second magnetic flux density B2(I LTG ) and thus in a corresponding second first range BB12 of the measured value for the current intensity of the line current ILTG in the line LTG for the second sensor element SE2. In the example of Figure 5, the curve of the second sensor element SE2 is now designed such that the second first range BB12 of the measured value for the current intensity of the line current I LTG in the line LTG for the second sensor element SE2 the first first range BB11 of the measured value for the current intensity of the line current I LTGin the line LTG for the first sensor element SE1 and the first second range BB21 of the measured value for the current intensity of the line current I LTG in the line LTG for the first sensor element SE1. In the example of Figure 5, this is intentionally drawn so that the second first range BB12 of the measured value for the current intensity of the line current ILTG in the line LTG for the second sensor element SE2 comprises the first first range BB11 of the measured value for the current intensity of the line current I LTG in the line LTG for the first sensor element SE1 and the first second range BB21 of the measured value for the current intensity of the line current I LTG in the line LTG for the first sensor element SE1. This has the advantage that the current sensor can be precisely measured using the first fluorescence intensity value I fl1 (|B1(I LTG )|) of the first sensor element SE1 can decide whether the value of the line current I LTGrelated to the second curve of the second sensor element SE2 in the second first range BB12 of the measured value for the current intensity of the line current I LTG in the line LTG for the second sensor element SE2 or not. If the value of the line current I LTG related to the second curve of the second sensor element SE2 is NOT in the second first range BB12 of the measured value for the current intensity of the line current I LTG in the line LTG for the second sensor element SE2, the current value must be in the first third range BB31 of the measured value for the current intensity of the line current I LTG in the line LTG for the first sensor element SE1 and the current sensor determines the value of the current intensity of the line current I LTGin the line LTG for the first sensor element SE1 by means of the inversion described above using a computer and / or machine-implemented polynomial-based method, the coefficients and program code of which are preferably stored in a memory MEM of the computer system of the current sensor. For example, the computer core μC of the computer system of the current sensor executes this program code and reads this data from the memory MEM and uses the memory as a final and intermediate value memory. If the value of the line current I LTG related to the second curve of the second sensor element SE2, HOWEVER, in the second first range BB12 of the measured value for the current intensity of the line current I LTGin the line LTG for the second sensor element SE2so the current value must be in the second first range BB12of the measured value for the current intensity of the line current I LTG in the line LTG for the second sensor element SE2 and the current sensor determines the value of the current intensity of the line current I LTG in the line LTG for the second sensor element SE2 using a computer- and / or machine-implemented polynomial-based method, whose coefficients and program code are preferably stored in a memory MEM of the current sensor's computer system. For example, the computer core μC of the current sensor's computer system executes this program code and reads this data from the memory MEM, using the memory as a final and intermediate value memory. The transition from the first range BB11 of the measured value for the current intensity of the line current I LTGin the line LTG for the first sensor element SE1 to the first second area BB21 of the measured value for the current intensity of the line current I LTG in the line LTG for the first sensor element SE1, the first reversal point I LTG1u . The transition from the second to the first range BB12 of the measured value for the line current I LTG in the line LTG for the second sensor element SE2 to the second second area BB22 of the measured value for the current intensity of the line current I LTG in the line LTG for the second sensor element SE2, the second reversal point I LTG2u . The transition from the first to the second range BB21 of the measured value for the line current I LTG in the line LTG for the first sensor element SE1 to the first third area BB31 of the measured value for the current intensity of the line current I LTG in the line LTG for the first sensor element SE1, the first transition current value I LTG1ü. The transition from the second second range BB22 of the measured value for the current intensity of the line current I LTG in the line LTG for the second sensor element SE2 to the second third area BB32 of the measured value for the current intensity of the line current I LTG in the line LTG for the second sensor element SE2, the second transition current value I LTG2ü . Preferably, the first transition current value ILTG1ü is in the second first range BB12 of the measured value for the current intensity of the line current I LTG in the line LTG for the second sensor element Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 48 / 109 SE2. This enables the reversibility of the lower part of the second curve forms the second fluorescence intensity values ​​I fl2 |) of the second sensor element SE2. This is the essential idea of ​​the proposed system. Figure 6 shows an exemplary proposed system of an exemplary current sensor. The current sensor system comprises a first measuring channel with a first isotropic sensor element SE1 having a disordered plurality of first crystals with a plurality of first paramagnetic centers NV1 in a first carrier material TM1, and a second measuring channel with a second isotropic sensor element SE2 having a disordered plurality of second crystals with a plurality of second paramagnetic centers NV2 in a second carrier material TM2. The computer system RSYS controls the first and second measuring channels. First measuring channel for the first sensor element SE1.The computer system RSYS controls a first driver DRV1 of the first measuring channel via a digital-to-analog converter DAC, which driver supplies a first pump radiation source LED1 of the first measuring channel with electrical energy modulated in time using a first modulation signal, so that the latter generates a first pump radiation LB1 with a pump radiation wavelength. pmp emitted, wherein the first pump radiation LB1 is typically also temporally aligned with the first modulation signal in its first pump radiation intensity I pmp1(t) is modulated. A first optical system transports the first pump radiation LB1 to the first sensor element SE1. The first optical system can, for example, comprise a first optical waveguide LWL1 of the first measuring channel. The first optical system irradiates the first sensor element SE1 with the first pump radiation LB1. As a result, the first paramagnetic centers NV1 irradiated with the first pump radiation LB1 emit first fluorescence radiation FL1 depending on the first magnetic flux density B1 at the location of the respective first paramagnetic center NV1 and thus essentially at the location of the first sensor element SE1 and possibly further physical parameters. The further physical parameters can, for example, be the first temperature 1 of the first sensor element. If these are also to be evaluated and / or compensated, additional sensor elements and measuring channels are required for each parameter. In this case, the evaluation of the measuring channels using a computer- and / or machine-implemented neural network model is recommended, which is then typically executed by the computer system RSYS of the current sensor. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 49 / 109 A second optical system of the first measuring channel detects the emitted first fluorescence radiation FL1 of the first paramagnetic centers NV1 of the first sensor element SE1. The first optical system can be identical to the second optical system, as shown here. However, it is also conceivable for the second optical system to comprise another optical waveguide of the first measuring channel. This is not shown here for the sake of simplicity, but is included in the claim.The second optical system of the first measuring channel guides the first fluorescence radiation FL1 of the first paramagnetic centers NV1 of the first sensor element SE1 via a separation means to a first photodetector PD1 of the first measuring channel. In the case of Figure 6, the second optical system is identical to the first optical system and comprises, as a return means for the first fluorescence radiation FL1, the first optical waveguide LWL1 already used to guide the first pump radiation LB1. The first separation means ensures that essentially no first pump radiation LB1 reaches the first photodetector PD1 and essentially a maximum of the first fluorescence radiation LB1 reaches the first photodetector PD1. In the example of Figure 6, the separation means of the first measuring channel is a first dichroic mirror DM1, which guides and / or transmits the first fluorescence radiation FL1 to the first photodetector PD1.The first photodetector PD1 converts the first temporal intensity profile of the first fluorescence intensity I. fl1 (t) of the first sensor element SE1 into a first receiver output signal S01. The multi-channel analog-to-digital converter ADC detects the first receiver output signal S11 amplified by a first amplifier V11 and makes the sample data of the first receiver output signal S01 available to the computer core μC and / or other device parts of the computer system RSYS. Second measuring channel for the second sensor element SE2. The computer system RSYS controls a second driver DRV2 of the second measuring channel via a digital-to-analog converter DAC, which supplies a second pump radiation source LED2 of the second measuring channel with electrical energy modulated in time using a second modulation signal, so that the latter generates a second pump radiation LB2 with a pump radiation wavelength pmpemitted, wherein the second pump radiation LB2 is typically also temporally aligned with the second modulation signal in its second pump radiation intensity I pmp2(t) is modulated. A first optical system transports the second pump radiation LB2 to the second sensor element SE2. The first optical system of the second measuring channel can, for example, comprise a second optical waveguide LWL2 of the second measuring channel. The first optical system of the second measuring channel irradiates the second sensor element SE2 with the second pump radiation LB2. As a result, the second paramagnetic centers NV2 irradiated with the second pump radiation LB2 emit second fluorescence radiation FL2 depending on the second magnetic flux density B2 at the location of the respective second paramagnetic center NV2 and thus essentially at the location of the second sensor element SE2 and possibly further physical parameters. The further physical parameters can, for example, be the second temperature of the second sensor element SE2. If these are also to be evaluated and / or compensated, additional sensor elements and measuring channels are required for each parameter. In this case, the evaluation of the measuring channels using a computer- and / or machine-implemented neural network model is recommended, which is then typically executed by the computer system RSYS of the current sensor. A second optical system of the second measuring channel detects the emitted second fluorescence radiation FL2 of the second paramagnetic centers NV2 of the second sensor element SE2. The first optical system of the second measuring channel can be identical to the second optical system of the second measuring channel, as shown here. However, it is also conceivable that the second optical system of the second measuring channel comprises another optical fiber of the second measuring channel. This is not shown here for the sake of simplicity, but is included in the claim.The second optical system of the second measuring channel guides the second fluorescence radiation FL2 of the second paramagnetic centers NV2 of the second sensor element SE2 via a separation means to a second photodetector PD2 of the second measuring channel. In the case of Figure 6, the second optical system of the second measuring channel is identical to the first optical system of the second measuring channel and comprises, as a return means for the second fluorescence radiation FL2, the second optical waveguide LWL2, which was already used to guide the second pump radiation LB2. The second separation means ensures that essentially no second pump radiation LB2 reaches the second photodetector PD2 and essentially a maximum of the second fluorescence radiation LB2 reaches the second photodetector PD2.In the example of Figure 6, the separation means of the second measurement channel is a second dichroic mirror DM2, which guides and / or transmits the second fluorescence radiation FL2 to the second photodetector PD2. The second photodetector PD2 converts the second temporal intensity profile of the second fluorescence intensity I. fl2(t) of the second sensor element SE2 into a second receiver output signal S02. The multi-channel analog-to-digital converter ADC detects the second receiver output signal S12 amplified by a second amplifier V12 and makes the sample data of the second receiver output signal S02 available to the computer core μC and / or other device parts of the computer system RSYS. The computer system RSYS comprises at least the computer core μC, which is connected via a data bus DB to the multi-channel analog-to-digital converter ADC, the digital-to-analog converter DAC, and a memory MEM, which comprises one or more volatile memories RAM and / or one or more non-volatile memories NVM. Via at least one data bus interface DBINF and a connected data communication channel EXTDB (e.g.An external data bus or a wireless transmission link allows the proposed computer system RSYS to communicate with one or more other computer systems RCOMP, which may be higher-level, and exchange data and / or program code. In the example in Figure 6, the second sensor element SE2 should have a different second spatial distance from the line LTG than the first spatial distance between the first sensor element SE1 and the line LTG. For example, the first distance should be smaller than the second distance. Therefore, the current generated by the electrical current I. LTGThe first magnetic flux density B1 generated in the line LTG, which acts on the first sensor element SE1 with the first paramagnetic centers NV1, is greater than the second magnetic flux density B2 acting on the second sensor element SE2 with the second paramagnetic centers NV2. Therefore, the curves of Figures 2 to 5 are similarly obtained for the current sensor of Figure 6. The computer system RSYS can, by means of the methods described in the document presented here, when executing the same as a machine- and / or computer-implemented method, now by executing the corresponding program code in the memory MEM, determine a current value of the line current I LTG in the line LTG and / or the electrical power P transported in the line LTG LTG The RSYS computer system can estimate the current value of the line current I LTGin the line LTG and / or the electrical power P transported in the line LTG LTG with one or more threshold values ​​and control an electronic switch T2 in the line LTG depending on the result of this or these comparisons. Preferably, the computer system RSYS can then control the electrical current flow of the electrical current I LTG in the line LTG by means of a corresponding control signal via a switch driver SDRV. For this purpose, the switch driver SDRV of the current sensor can open or close switch T2 by means of a switching signal. For example, if the computer and / or machine-implemented method for extracting the measured values ​​from the intensities (I fl1 (|B1(I LTG )|), I fl2 (|B2(I LTG)|)) of the fluorescence radiations (FL1, FL2) of the sensor elements (SE1, SE2) and for evaluating the measured values ​​recorded and for controlling the switch T2, is arranged to open the switch T2 when the value of the magnitude of the line current I LTG in the line LTG exceeds a current threshold and / or if the value Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 52 / 109 of the amount of electrical power P transported in the line LTG LTGIf a power threshold is exceeded, the function of the current sensor is equivalent to that of an electronic fuse. Preferably, the control signal of the current sensor's switch driver SDRV, with which the current sensor's switch driver SDRV controls switch T2, is an optical signal. An optical signal, as defined in the document presented here, only includes wavelengths in the optical wavelength range from 1 nm to 1 mm. This has the advantage of complete galvanic isolation between the line and its device components, including switch T2, on the one hand, and the remaining device components of the current sensor, making this current sensor suitable for ultra-high-voltage applications.It is important to note here that the figure is not to scale. Figure 7 shows an exemplary second possibility for generating a first magnetic flux density B1 at the location of the first sensor element SE1 and a second magnetic flux density B2 at the location of the second sensor element SE2 using a magnetic circuit MK in cross-section. The circular cross-section of the line LTG w is surrounded by an exemplary ferrite core. Due to the current flow of the electric current ILTG in the conductor LTG perpendicular to the plane of the page, this excites a first magnetic field strength H in the magnetic circuit. LTGwhich, depending on the network of magnetic resistances of the ferrite, produces a first magnetic flux density B1 in the first air gap ag1 with the first sensor element SE1 and a second magnetic flux density B2 in the second air gap ag2 with the second sensor element SE2 in the partial branches of the magnetic circuit MK. Depending on the design of the magnetic circuit, the ratio B1 / B2 can be suitably adjusted. Therefore, according to the proposal, the current sensor preferably comprises means for adjusting the ratio B1 / B2. These means can be distances between the sensor elements (SE1, SE2) on the one hand and the line LTG and / or magnetic resistances as in the example in Figure 7 and / or meandering loops of the conductor LTG as in Figure 8 and / or other shapes of the conductor LTG such as bends, loops, flat coils, etc. It is important to note here that the figure is not to scale.Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 53 / 109 Figure 8 Figure 8 shows a third exemplary possibility for adjusting the first magnetic flux density B1 and the second magnetic flux density B2. In the example of Figure 8, the exemplary conductor LTG of the current sensor comprises two meander loops: a first meander loop MSL1 and a second meander loop MSL2. The first meander loop MSL1 comprises a forward line in the form of a first line section LTGa1 of the first meander loop MSL1 and a return line LTGb1 of the first meander loop MSL1 parallel thereto at a first meander loop spacing b1. The first meander loop MSL1 has a first slot SL1 with the first meander loop spacing b1. The first sensor element SE1 is placed in the first slot SL1. The controller CTR controls the first sensor element SE1 with first pump radiation LB1 via the first optical fiber LTG1.The controller CTR detects and evaluates the first fluorescent radiation Fl1 of the first sensor element SE1 transported back via the first optical fiber LWL1. The second meander loop MSL2 comprises a forward line in the form of a first line section LTGa2 of the second meander loop MSL2 and a parallel return line LTGb2 of the second meander loop MSL2 at a second meander loop spacing b2 that is different from the first meander loop spacing b1. The second meander loop MSL2 has a second slot SL2 with the second meander loop spacing b2. The second sensor element SE2 is placed in the second slot SL2. The controller CTR controls the second sensor element SE2 with second pump radiation LB2 via the second optical fiber LTG2. The controller CTR detects and evaluates the second fluorescent radiation Fl2 of the second sensor element SE2 transported back via the second optical fiber LWL2.Figure 4 is shown again in the lower part of the figure to clarify which characteristic curve belongs to which sensor element (SE1, SE2). It is important to note here that the figure is not to scale. Figure 9 Figure 9 corresponds to Figure 8, with four sensor elements (SE1 to SE4) now placed in the four slots (SL1 to SE4) of four meander loops (MSL1 to MSL4) of the LTG line. In addition to the functions of Figure 8, the third meander loop MSL3 comprises a forward line in the form of a first line section LTGa3 of the third meander loop MSL3 and a parallel return line LTGb3 of the third meander loop MSL3 at a third meander loop spacing b3. The third meander loop MSL3 has a third slot SL3 with the third meander loop spacing b3. The third sensor element SE1 is placed in the third slot SL3.The controller CTR controls the third sensor element SE3 with third pump radiation LB3 of the third pump radiation wavelength via the third optical fiber LTG3. pmp3 The controller CTR detects and evaluates the third fluorescent radiation Fl3 of the third sensor element SE3 transported back via the third optical fiber LWL3. A fourth meander loop MSL4 comprises a forward line in the form of a first line section LTGa4 of the fourth meander loop MSL4 and a parallel return line LTGb4 of the fourth meander loop MSL4 at a fourth meander loop spacing b4. The fourth meander loop MSL4 has a fourth slot SL4 with the fourth meander loop spacing b4. The fourth sensor element SE4 is placed in the fourth slot SL4. The controller CTR controls the fourth sensor element SE4 with fourth pump radiation LB4 of the fourth pump radiation wavelength via the fourth optical fiber LTG4. pmp4The controller CTR detects the fourth fluorescent radiation Fl4 of the fourth sensor element SE4, which is transported back via the fourth optical fiber LWL4, and evaluates it. In the lower part of the figure, Figure 4 is shown again, expanded to include four sensor elements (SE1 to SE4), to clarify which characteristic curve belongs to which sensor element (SE1 to SE4). Figure 10 shows a computer- and / or machine-implementable method 100 for determining the current value of the current intensity of the electrical current I LTG in the line LTG, wherein the processor core μC of the computer system RSYS of the current sensor is preferably configured to execute the program code in the memory MEM of the computer system RSYS to carry out this method. The method is directed to two sensor elements SE1 and SE2 and can be applied analogously to n sensor elements SE1 to SE ncan be expanded with a corresponding addition of additional measurement channels to the current sensor. The method 100 begins with the method start 110. The first step 120 comprises the acquisition of the first intensity value of the first fluorescence intensity I fl1 (B1(I LTG )) of the first isotropic sensor element SE1. In the second step 130, a check is made as to whether the first intensity value is located in the first fluorescence intensity range FIB11 of the first isotropic sensor element SE1. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 55 / 109 If the first intensity value is located in the first fluorescence intensity range FIB11 of the first isotropic sensor element SE1, a determination of the value of the current intensity of the electric current I is carried out in a third step 140 of the computer- and / or machine-implementable method. LTGin the line LTG using the first fluorescence intensity I fl 1(|B1(I LTG )|) of the first sensor element SE1, for example, by means of the machine- and / or computer-implemented formula ILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|))). Typically, the computer- and / or machine-implemented method here uses a computer- and / or machine-implemented polynomial approximation, which is carried out by the computer system RSYS of the current sensor. The sixth step 170 then follows. If the first intensity value is in the NOT first first of the first isotropic sensor element SE1, is carried out in and / or machine-implementable method 100 for determining the value of the current intensity of the electrical line current I LTG in the line LTG for such a current sensor a detection of the second intensity value of the second fluorescence intensity I fl2 (B1(I LTG)) of the second isotropic sensor element SE2. In a fifth step 160 of determining the current intensity of the electric current (I LTG ) in the line (LTG), the method determines the intensity of the electric current (I LTG ) in the line (LTG) using the wide fluorescence intensity (I fl2 (|B2(I LTG )|)) of the second sensor element (SE2), for example, by means of the machine- and / or computer-implemented formula ILTG=K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))). Typically, the computer- and / or machine-implemented method here uses a computer- and / or machine-implemented polynomial approximation, which is carried out by the computer system RSYS of the current sensor. In the sixth step 170, the method outputs the determined value of the current intensity of the line current (I LTG) in the line (LTG) and / or stores it in a memory (MEM) and / or keeps it, in particular in a memory, ready for further use and / or uses it and / or transmits it via a data interface (DBINF) and a data transmission channel (EXTDB) to a higher-level computer or another computer system. This completes the method. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 56 / 109 The great advantage is that the ambiguity of the fluorescence intensity of an individual sensor element (SE1) in the second fluorescence intensity range (FIB21), which is for low currents of the electrical line current (I LTG) in the line (LTG) is relevant, can be clearly resolved. This eliminates the use of permanent magnets to stabilize an operating point of the first sensor element (SE1), which also typically leads to thermal drift and requires an expensive calibration process. Figure 11 Figure 11 shows an embodiment of the measuring head of a measuring system according to Figure 6, wherein here an additional magnetic circuit MK analogous to that of Figure 7 is provided for the different magnetic coupling of the first sensor element SE1 and the second sensor element SE2 with the magnetic excitation by the magnetic field strength of the line current I LTGis used in the line LTG. In the example of Figure 11, the measuring head of the measuring system of the figure is provided with an insulator with an insulating body IK. Of the device elements of the figure, the measuring head comprises the first isotropic sensor element SE1, the second isotropic sensor element SE2, the magnetic circuit MK of Figure 7 and the first optical fiber LWL1 for the first isotropic sensor element SE1 and the second optical fiber LWL2 for the second isotropic sensor element SE2. The line LTG is guided through the opening of the partially torus-shaped magnetic circuit MK. The first isotropic sensor element SE1 is placed in the first air gap ag1 of the magnetic circuit MK closer to the line LTG1, so that the first sensor element SE1 is flooded with a higher first magnetic flux density B1.The second isotropic sensor element SE2 is placed further away from the line LTG1 in the second air gap ag2 of the magnetic circuit MK, so that the second sensor element SE2 is flooded by a lower second magnetic flux density B2. The measuring head of Figure 11 is preferably designed for use in high-voltage systems and high-voltage networks. Such a measuring head with such an insulating body IK for high-voltage pylons, high-voltage systems, and high-voltage networks is a crucial component in the power grid, since the measuring head with its insulating body IK serves to insulate the sensor for measuring the magnetic field of a line from the pylon or the device parts of the high-voltage systems or high-voltage networks, thus ensuring that the electrical line current I. LTGthe LTG line is not undesirably discharged via the sensor into the masts, other parts of the device or the ground. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 57 / 109 A proposed measuring head with its insulating body IK typically comprises various components that contribute to the function of the measuring head with its insulating body IK: Insulating body IK: The main component of the measuring head is the insulating body IK. This can be made of, for example, ceramic material such as porcelain or glass fibre reinforced plastic (GRP). The insulating body IK is particularly robust and preferably has a high insulation capacity in the G or T range or higher in order to electrically insulate the electrical line current ILTG of the LTG line.In the example of Figure 11, the insulating body has no metallic or electrically conductive components along the section between the first end fitting EB1 and the second end fitting EB2. This property is also referred to as "metal-free" in this document. The metal-free insulating body IK makes the measuring head particularly dielectric-resistant. End fittings EB1, EB2: The respective end fittings EB1, EB2 are located at both ends of the proposed insulating body IK. These respective end fittings EB1, EB2 can comprise metallic components and are typically used to mechanically fasten the proposed insulating body to the high-voltage pylon or the LTG line using the fastening elements. The end fittings EB1, EB2 are preferably both mechanically robust and electrically insulated from each other by the insulating body IK, with an insulation capability in the G or T range or higher.Due to the preferably metallic design of the end fittings, other device components, such as a hood HB, can form a Faraday body with them and shield the sensor elements SE1 and SE2. Fastening elements BFE: These elements enable the measuring head to be attached to a high-voltage pylon, in a high-voltage transformer, or to the LTG line (e.g., high-voltage line). They are preferably made of metal and are designed to ensure stable and secure installation. Typically, they are mechanically connected to the respective insulating body IK. The document presented here therefore proposes a measuring head that has an insulating body IK with a first end fitting EB1 and a second end fitting EB2. The insulating body IK spatially separates the first end fitting EB1 from the second end fitting EB2.The insulating body IK electrically separates the first end fitting EB1 from the second end fitting EB2 with an insulating capacity with an electrical resistance >1 G and / or >1 T. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 58 / 109 The first sensor element SE1 and the second sensor element SE2 are preferably mechanically connected to the first end fitting EB1. The first end fitting EB1 preferably has fastening means for the line LTG and ensures a fixed and defined geometric relationship between the first sensor element SE1 and the second sensor element SE2 and the magnetic circuit MK and the line LTG. The second end fitting EB2 has a fastening means for the first optical fiber LWL1. This can be an optical fiber plug connection for the first optical fiber LWL1, which is fastened, for example, to the second end fitting EB2.The second end fitting EB2 has a fastening means for the second optical fiber LWL2. This can be a fiber optic plug connection for the second optical fiber LWL2, which is fastened, for example, to the second end fitting EB2. The first optical fiber LWL1 is preferably electrically insulated within the insulating body IK from the second end fitting EB2 to the first end fitting EB1. The first optical fiber LWL1 is preferably fastened to the first end fitting EB1 and configured such that it can detect the first fluorescent radiation FL1 of the first sensor element SE1, if necessary using optical aids. The first optical fiber LWL1 is preferably configured to guide the first pump radiation LB1 through the insulating body IK to the first sensor element SE1 and there to irradiate the first sensor element SE1 with the first pump radiation LB1.The second optical waveguide LWL2 is preferably routed in an electrically insulated manner within the insulating body IK from the second end fitting EB2 to the first end fitting EB1. The second optical waveguide LWL2 is preferably attached to the first end fitting EB1 and configured such that it can detect the second fluorescent radiation FL2 of the second sensor element SE2, if necessary using optical aids. The second optical waveguide LWL2 is preferably configured to guide the second pump radiation LB2 through the insulating body IK to the second sensor element SE2 and there to irradiate the second sensor element SE2 with the second pump radiation LB2.Instead of using a reflected light method in which firstly the first optical waveguide LWL1 transports the first pump radiation LB1 to the first sensor element SE1 and transports the first fluorescence radiation FL1 of the first sensor element SE1 from the first sensor element SE1 to the controller CTR with the control and evaluation device LIV and secondly the second optical waveguide LWL2 transports the second pump radiation LB2 to the second sensor element SE2 and transports the second fluorescence radiation FL2 of the second sensor element SE2 from the second sensor element SE2 to the controller CTR with the control and evaluation device LIV, the current sensor can also be set up for use in a transmitted light method.In this case, the current sensor is configured such that, firstly, a first optical waveguide LWL11 transports the first pump radiation LB1 to the first sensor element SE1, and secondly, a first second optical waveguide LWL21 transports the first fluorescent radiation FL1 of the first sensor element SE1 from the first sensor element SE1 to the controller CTR with the control and evaluation device LIV, and thirdly, a second first optical waveguide LWL12 transports the second pump radiation LB2 to the second sensor element SE2, and fourthly, a second second optical waveguide LWL22 transports the second fluorescent radiation FL2 of the second sensor element SE2 from the second sensor element SE2 to the controller CTR with the control and evaluation device LIV. In this case, the insulating body has. i.e., at least four optical waveguides (LWL11, LWL22, LWL12, LWL22). In the controller CTR, the first dichroic mirror DM1 is then typically replaced by a first optical filter F1, which preferably essentially allows only the first fluorescent radiation FL1 of the first sensor element SE1 to pass through to the first photodetector PD1 of the electromagnetic radiation emerging from the first second optical waveguide LWL21, while the first pump radiation source LED1 can feed directly into the first optical waveguide LWL11 without the need for the first dichroic mirror DM1.In the controller CTR, the second dichroic mirror DM2 is then typically replaced by a second optical filter F2, which preferably essentially transmits only the second fluorescent radiation FL2 of the second sensor element SE2 to the second photodetector PD2 of the electromagnetic radiation emerging from the second optical waveguide LWL22, while the second pump radiation source LED2 can feed directly into the first optical waveguide LWL12 without the need for the second dichroic mirror DM2. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 60 / 109 As a rule, in the transmitted-light method, the contrast between the respective maximum value of the attenuation (Iflmax(|B(ILTG|)) of the fluorescent radiation and the minimum of the attenuation of the fluorescent radiation is less relevant. Therefore, the document presented here essentially describes the incident-light method.However, the transmitted-light method is also disclosed. The description now continues for the incident-light method. The second end fitting EB2 can then have a second fastening for the first optical fiber LWL1. This can be a second optical fiber plug connection for the first optical fiber LWL1, which is fastened, for example, to the second end fitting EB2. The second end fitting EB2 can then have a second fastening for the second optical fiber LWL2. This can be a second optical fiber plug connection for the second optical fiber LWL2, which is fastened, for example, to the second end fitting EB2. The second end fitting EB2 can have connecting terminals.The second end fitting EB2 can have special connection terminals or metal parts to securely hold a conductor of a line LTG, while the insulating body IK and the optical fibers (LWL1, LWL2) ensure electrical insulation. Preferably, the first end fitting EB1 is provided with a weather cap or hood HB (not shown in Figure 11). This encloses the first end fitting EB1 to protect it from the effects of environmental influences such as rain, snow, sunlight, and light. Preferably, this protective device, a weather cap or hood HB, is preferably made at least partially from an electrically conductive material that is preferably electrically connected to the line LTG. As a result, the preferably light- and watertight weather cap or hood HB forms a Faraday cage and shields the first sensor element SE1 and the second sensor element SE2 from light and moisture.Preferably, the outer surface is coated with or protected by an electrically insulating material, wherein this electrically insulating material may comprise, for example, rubber, plastic, or other weather-resistant and preferably electrically insulating materials. Preferably, a material of the preferably light- and watertight weather cap or hood HB also comprises a soft magnetic material for shielding against magnetic fields from other lines. Such a construction and the proposed design of the proposed measuring head ensure that it can withstand the extreme conditions to which it is exposed in high-voltage networks. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 61 / 109The proposed measuring head therefore possesses high electrical insulation properties, is mechanically stable, and can also withstand environmental conditions such as temperature fluctuations, humidity, and other weather influences. The insulating body IK of an insulator for such a proposed measuring head for high-voltage networks is a central element, comprising various components to ensure electrical insulation and the mechanical stability of the insulating body IK and the measuring head. Core material: The insulating body IK preferably comprises a ceramic material such as porcelain or a glass-fiber-reinforced plastic (GRP). These materials offer high strength and excellent insulating properties to conduct the electrical line current I. LTGto provide adequate electrical insulation and ensure that no unwanted current leakage occurs. Insulating pins: These are typically embedded in the IK insulator and typically serve to assist the electrical flow path within the insulator and increase insulation strength. They are typically made of the same material as the IK insulator and are preferably strategically placed to ensure effective electrical insulation. During rework, appropriate simulation using suitable CAD software is recommended for design. Glaze or coating: Some IK insulators may be coated with a special glaze or coating to smooth the surface and further improve insulation properties. These coatings can help repel contaminants and optimize the IK insulator's performance under different environmental conditions.Mounting devices: Within the insulating body IK, fastening points or other structures can be integrated that allow the insulating body IK to be securely attached to the end fittings EB1, EB2, thus ensuring stable installation on and in high-voltage devices and high-voltage lines LTG. Such mounting devices can also include aids for guiding the optical fibers within the insulating body IK. These are preferably made of an electrically insulating material. The insulating body IK is a crucial component of the proposed measuring head shown in Figure 11 for high-voltage devices, as it is responsible for insulating the conductor cable of the line LTG and ensuring that the line current ILTG of the line LTG is safely conducted from point to point without causing unwanted leakage or dissipation.The design and material selection for the insulating body IK are crucial for the performance and durability of the entire proposed Figure 11 measuring head for high-voltage devices. The insulating body IK preferably has ribs RI (also called "conductor ribs"). These ribs RI are structural elevations or reinforcements that run along the insulating body IK. These conductor ribs RI serve several purposes. Mechanical reinforcement: They improve the mechanical stability and strength of the insulating body IK. The ribs RI help increase the tensile strength of the insulating body, which is important for handling loads caused by wind, the weight of the line conductor LTG, and other environmental influences. Surface texture: The ribs RI can also modify the surface texture of the insulating body IK.Through their arrangement, they can help shape the surface of the insulating body IK to improve water drainage and self-cleaning effects by reducing the accumulation of dirt or moisture on the surface of the proposed measuring head. Increased creepage distance: The ribs RI can prevent the creeping discharge of current along the surface of the insulating body IK by extending the creeping distance over which an arc could occur. This is important to minimize the risk of breakdowns or leakage currents. The term "conductor ribs" or simply "ribs" of the ribs RI refers to these specific structural elements arranged along the insulating body IK to improve its performance and reliability in high-voltage applications. Preferably, the proposed measuring head of Figure 11 is provided with a magnetic circuit MK driven by the conduction current I.LTGin the line LTG is excited. The magnetic circuit preferably has a first air gap ag1, in which the first sensor element SE1 is located, and a second air gap ag2, in which the second sensor element SE2 is located. The magnetic circuit is preferably provided with an opening through which the line LTG is or can be guided. The magnetic circuit is preferably fastened to the first end fitting EB1 of the proposed measuring head in Figure 11. The magnetic circuit can preferably be opened by means of corresponding machine elements (such as hinges and locks or screw connections) for the installation of the line LTG and then closed again after installation. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 63 / 109 It has proven useful if the connection of the optical fiber to the second end fitting EB2 is protected by an arc guard.Figure 11a shows the side view and Figure 11b the side view rotated by 90°. Figure 11 shows the device parts of Figures 6 and 7, which are partially realized by the measuring head of Figure 11. Figure 12 Figure 12 shows the measuring head of Figure 11 in a perspective view without the cover HB and with the magnetic circuit MK open for the installation of the line LTG. Figure 13 Figure 13 shows a schematic, simplified cross-section through an exemplary optically switchable electronic switch T2 with a microelectronically manufactured semiconductor switch BE. For the purpose of explanation, the document presented here has chosen a particularly simply structured microelectronically manufactured semiconductor switch BE in the form of an exemplary vertical NPN transistor. The substrate Sub is assumed to be an exemplary n-doped semiconductor material, for example n-doped silicon.The substrate is electrically contacted, for example, via a rear contact (not shown here), and forms the exemplary collector of the exemplary NPN transistor used as an optically controllable switch T2. An exemplary p-doped p-well PW is formed in the substrate Sub as the base of the exemplary NPN transistor used as an optically controllable switch T2. Another exemplary n-doped N-well NW is formed in the P-well PW of the substrate Sub as an emitter. The inner line section LTG. +The line LTG within the exemplary optically switchable switch T2 is interrupted here by the emitter-collector path of the semiconductor switch in the form of an exemplary vertical NPN transistor in the substrate Sub. A cap oxide AOX and a field oxide FOX insulate various regions of the metallization stack and the substrate Sub from each other. A substrate contact SubC contacts the collector of the switching transistor with the line section LTG. + . An emitter contact ECO contacts the N-well NW, which serves as the emitter of the switching transistor T2, and connects it to the other line section LTG +. In the example of Figure 13, the first sensor element SE1 is a microstructured first sensor element SE1 on the surface of the microelectronically manufactured semiconductor switch and / or in the metallization stack of the microelectronically manufactured semiconductor switch BE, and the second sensor element SE2 is a microstructured second sensor element SE2 on the surface of the microelectronically manufactured semiconductor switch and / or in the metallization stack of the microelectronically manufactured semiconductor switch BE. The inner line section LTG + The LTG line contacts the N-tub NW coming from the left via an n+ contact area NKB. The inner section of the LTG line +The line LTG contacts the substrate Sub from the right by means of an n+ contact area NKB. The first sensor element SE1 has a first distance from the line section LTG + in the vertical direction to the surface of the substrate Sub, which is from the second distance from the line section LTG + in the vertical direction to the surface of the substrate Sub of the second sensor element SE2. Additionally or alternatively, the first sensor element SE1 and the second sensor element SE2 can also have a different distance to the line section LTG laterally, ie parallel to the surface of the substrate Sub. + This is usually more efficient and preferable, but would be harder to represent here. If a switching LED LED is connected via the third optical fiber LWL3 sIf an optical switching signal of a control radiation SB is generated and radiated into the microelectronically manufactured semiconductor switch BE as switch T2, the control radiation SB hits the PN junction between the N-well NW and the P-well PW. This PN junction thereby generates a photocurrent and feeds this photocurrent into the P-base of the P-well PW of the microelectronically manufactured semiconductor switch BE between the N-well NW (emitter) and the n-doped substrate Sub (collector), whereby the NPN transistor as the microelectronically manufactured semiconductor switch BE and as switch T2 switches through and a conduction current I LTG through the inner line section LTG + the LTG line and thus through the LTG line. The two sections of the inner LTG line section shown here +are connected to two different sections of the LTG line outside the optically switchable switch T2 using construction and connection methods not shown here. The line current I LTG through the inner line section LTG + The line LTG generates a first magnetic flux density B1 in the region of the first paramagnetic centers NV1 in the first sensor element SE1, which influences the first fluorescence radiation FL1 of these first paramagnetic centers NV1. The first optical fiber LWL1 transports the first pump radiation LB1 from the first pump radiation source LED1 to the first sensor element SE1 and irradiates the first sensor element SE1 with first pump radiation LB1 of a first pump radiation wavelength. pmp1. In the example of Figure 13, the first optical waveguide LWL1 captures the first fluorescence radiation FL1 of the first paramagnetic centers NV1 and transports the first fluorescence radiation FL1 to a first photodetector PD1 (not shown here). A first semi-transparent mirror SP1 enables the coupling of the first pump radiation LB1 into the first optical waveguide LWL1. The first filter F1 is preferably configured to filter electromagnetic radiation of the first fluorescence radiation wavelength fl1 the first fluorescence radiation FL1 and electromagnetic radiation with the first pump radiation wavelength pmp1 the first pump radiation LB1 and electromagnetic radiation with the second pump radiation wavelength pmp2 of the second pump radiation LB2 and electromagnetic radiation of the switching radiation wavelength sThe switching radiation SB does not pass through, so that it does not reach the first photodetector PD1. The line current ILTG through the inner line section LTG + The line LTG generates a second magnetic flux density B2 in the area of ​​the second paramagnetic centers NV2 in the second sensor element SE2, which influences the second fluorescence radiation FL2 of these second paramagnetic centers NV2. The second optical fiber LWL2 transports the second pump radiation LB2 from the second pump radiation source LED2 to the second sensor element SE2 and irradiates the second sensor element SE2 with second pump radiation LB2 of a second pump radiation wavelength. pmp2. In the example of Figure 13, the second optical waveguide LWL2 detects the second fluorescence radiation FL2 of the second paramagnetic centers NV2 and transports the second fluorescence radiation FL2 to a second photodetector PD2 (not shown here). A second semi-transparent mirror SP2 enables the coupling of the second pump radiation LB2 into the second optical waveguide LWL2. The second filter F2 is preferably configured to filter electromagnetic radiation of the second fluorescence radiation wavelength. fl2 the second fluorescence radiation FL2 and electromagnetic radiation with the first pump radiation wavelength pmp1 the first pump radiation LB1 and electromagnetic radiation with the second pump radiation wavelength p mp2 the second pump radiation LB2 and electromagnetic radiation of the switching radiation wavelength sthe switching radiation SB, so that they do not reach the second photodetector PD2. A filter layer F2 and / or a corresponding second filter is preferably designed for electromagnetic radiation of the switching radiation wavelength s the switching radiation SB transparent and for electromagnetic radiation of the first fluorescence radiation wavelength fl1 the first fluorescence radiation FL1 and electromagnetic radiation with the first Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 66 / 109 pump radiation wavelength pmp1 the first pump radiation LB1 and for electromagnetic radiation of the second fluorescence radiation wavelength fl2 the second fluorescence radiation FL2 and electromagnetic radiation with the second pump radiation wavelength pmp2the second pump radiation LB2 is not transparent. This enables optical control of the microelectronically manufactured semiconductor switch BE and prevents unwanted activation of the microelectronically manufactured semiconductor switch BE by scattered first pump radiation LB1 or scattered first fluorescent radiation FL1 or by scattered second pump radiation LB2 or scattered second fluorescent radiation FL2. Instead of the filter layer F2, other means can also be provided to enable optical control of the microelectronically manufactured semiconductor switch BE by switching radiation SB and to prevent unwanted activation of the microelectronically manufactured semiconductor switch BE by scattered pump radiation LB or scattered fluorescent radiation FL. The remaining device parts of the device in Figure 6, which are not shown here, can be found in Figure 6. These are not shown here for clarity.Function of the barrier The proposed device preferably has one or more barriers BA1, BA2 and / or a filter layer F2 as barrier BA and / or a second optical filter as barrier BA, which prevent pump radiation LB1, LB2 from a pump radiation source LED1, LED2 from reaching the second, optically controllable switch T2 and from disturbing or influencing the switching state and / or switching operations of the second, optically controllable switch T2. The optical filters F1, F2 preferably prevent switching radiation SB from the switching LED LED. s can reach one of the photodetectors PD1, PD2 and can interfere with or influence a receiver output signal S01, S02. Therefore, the first optical filter F1 preferably transmits electromagnetic radiation of the first fluorescence wavelength. fl1the first fluorescence radiation FL1of the first paramagnetic centers NV1of the first sensor element SE1and blocks a transmission of electromagnetic radiation of the first pump radiation wavelength pmp1 the first pump radiation LB1of the first pump radiation source LED1and electromagnetic radiation of the second pump radiation wavelength pmp2 the second pump radiation LB2, the second pump radiation source LED2, and electromagnetic radiation of the switching radiation wavelength s the switching radiation SB of the switching LED LED s . Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 67 / 109 Preferably, therefore, the second optical filter F2 transmits electromagnetic radiation of the second fluorescence wavelength fl2 of the second fluorescence radiation FL2 of the second paramagnetic centers NV2 of the second sensor element SE2 and blocks a transmission of electromagnetic radiation of the first pump radiation wavelengthpmp1 the first pump radiation LB1of the first pump radiation source LED1and electromagnetic radiation of the second pump radiation wavelength pmp2 the second pump radiation LB2, the second pump radiation source LED2, and electromagnetic radiation of the switching radiation wavelength s the switching radiation SB of the switching LED LED s . Preferably, the proposed device comprises fourth means (barrier BA, filter layer F2, second optical filter) which prevent pump radiation LB1, LB2 of the pump radiation sources LED1, LED2 from reaching the second, optically controllable switch T2 and from disturbing or influencing the switching state and / or switching operations of the second, optically controllable switch T2. Preferably, the second means (F1) prevent switching radiation SB of the switching LED LED scan reach the first photodetector PD1 or the second photodetector PD2 and can interfere with or influence the receiver output signal S0. Thus, ultimately, the first photodetector PD1 is preferentially sensitive to electromagnetic radiation of the first fluorescence wavelength 1 of the first fluorescence radiation FL1 of the first paramagnetic centers NV1 of the first sensor element SE1 and to electromagnetic radiation of the first pump radiation wavelength pmp1 the first pump radiation LB1of the first pump radiation source LED1and for electromagnetic radiation of the second pump radiation wavelength pmp2 the second pump radiation LB2the second pump radiation source LED2insensitive and for electromagnetic radiation of the switching radiation wavelength sthe switching radiation SB of the switching LEDs. Thus, ultimately, the second photodetector PD2 is preferentially sensitive to electromagnetic radiation of the second fluorescence wavelength 2 of the second fluorescence radiation FL2 of the second paramagnetic centers NV2 of the second sensor element SE2 and to electromagnetic radiation of the first pump radiation wavelength pmp1 the first pump radiation LB1of the first pump radiation source LED1and for electromagnetic radiation of the second pump radiation wavelength pmp2 the second pump radiation LB2 of the second pump radiation source LED2 insensitive and for electromagnetic radiation of the switching radiation wavelength of the switching radiation SB of the switching LED LED sinsensitive. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 68 / 109 Thus, ultimately the second optical switch T2 is for electromagnetic radiation of the switching radiation wavelength SB of the switching LED LED s sensitive and for electromagnetic radiation of the first pump radiation wavelength pmp1 the first pump radiation LB1of the first pump radiation source LED1and for electromagnetic radiation of the second pump radiation wavelength pmp2the second pump radiation LB2 of the second pump radiation source LED2 and insensitive to electromagnetic radiation of the first fluorescence wavelength 1 of the first fluorescence radiation FL1 of the first paramagnetic centers NV1 of the first sensor element SE1 and to electromagnetic radiation of the second fluorescence wavelength 2 of the second fluorescence radiation FL2 of the second paramagnetic centers NV2 of the second sensor element SE2. It is therefore essential that the control radiation wavelength s the control radiation SB of the control LED LED s on the one hand and the fluorescence radiation wavelengths fl1 , fl2 the paramagnetic centers NV1, NV2of the sensor elements SE1, SE1and the pump radiation wavelengths pmp1 , pmp2of the pump radiations LB1, LB2 of the pump radiation source LED1, LED2, on the other hand, differ from one another. Glossary Paramagnetic centers When diamond material is used as the crystal material of the crystals of the sensor elements SE, the paramagnetic centers NV can, for example, be NV centers and / or SiV centers and / or TiV centers and / or GeV centers and / or SnV centers and / or NiN4 centers and / or PbV centers and / or ST1 centers and / or TR1 centers and / or L2 centers. Other paramagnetic centers NV and / or crystal materials appear to be functionally equivalent. When NV centers in diamond are used as the crystals of the sensor elements SE, the pump radiation LB preferably has a pump radiation wavelength pmpin a wavelength range of 400 nm to 700 nm and / or better 450 nm to 650 nm and / or better 500 nm to 550 nm and / or better 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength. pmp . In the case of the use of NV centers in diamond material or in diamonds of the sensor elements SE, a laser diode from Osram of the type PLT5520B is used, for example, as pump radiation source PL1 with 520nm pump radiation wavelength p mpWhen using NV centers as paramagnetic centers NV in diamond crystals as crystals in the sensor elements SW, the NV centers as paramagnetic centers NV of the sensor elements SE typically emit a fluorescence radiation FL with a typical fluorescence wavelength when irradiated with pump radiation LB of the pump radiation wavelength pmp described above. flof approximately 637 nm. Reference is made here to the book by A. M. Zaitsev, "Optical Properties of Diamond, A Data Handbook," Springer 2001, ISBN 978-3-662-04548-0. ZPL table. The table is only an example of some possible paramagnetic centers. These can be used as quantum bits. The document presented here particularly recommends the use of NV centers as paramagnetic centers of quantum dots and quantum bits of the quantum computer QC. The functionally equivalent use of other paramagnetic centers in other materials of the one or more crystals of the sensor element SE is expressly possible. The pump radiation wavelengths pmp of the pump radiation LB are also exemplary. Other pump radiation wavelengths pmpare usually possible if they are shorter than the wavelength of the concerned ZPL. Material magnitude center ZPL exemplifies the pump radiation crystal wavelength ( pmp) in the sensor element SE =============================================================================== Diamond NV-Zentrum 520nm, Diamond Syn-V-Zentrum 532 685 nm Diamond GeV-Centrum 602 nm 532 nm Diamond SnV-Centrum 620 nm 532 nm Diamond PbV-Centrum 520 nm, 450 nm 552 nm 715 nm 532 nm Diamond ST1-Centrum 555 nm Semiconductor Semiconductor SE Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 70 / 109 Diamond TR12-Zentrum 471 nm 410 nm Silicon G-Zentrum 1278.38 nm 637 nm Silicon Carbide V SI -Zentrum 862 nm(V1) 4H, 730 nm 730 nm 917 nm(V2) 4H, 730 nm 865 nm(V1) 6H, 730 nm 887 nm(V2) 6H, 730 nm 907 nm Silicon carbide 630 nm(V30H) DV-Zentrum 1078–1132 nm 6H 730 nm Silicon carbide V C V SI-Center 1093–1140 nm 6H 730 nm Silicon carbide CAV-Center 648.7 nm 4H, 6H, 3C 730 nm 651.8 nm 4H, 6H, 3C 730 nm 665.1 nm 4H, 6H, 3C 730 nm 668.5 nm 4H, 6H, 3C 730 nm 671.7 nm 4H, 6H, 3C 730 nm 673 nm 4H, 6H, 3C 730 nm 675.2 nm 4H, 6H, 3C 730 nm 676.5 nm 4H, 6H, 3C 730 nm Silicon carbide N C V SI-Center 1180 nm-1242 nm 6H 730 nm Carrier material The document presented here suggests, for example, a clear, colorless, liquid photopolymer, such as the optical Norland adhesive 61, as the carrier material TM of the sensor elements SE. Further information is available at https: / / www.norlandprod.com / adhesives / noa%2061.html at the time of filing the document presented here. For processing, the document presented here refers, for example, to DE 102022004475 A1. Pump radiation LB The preceding description sections use the term pump radiation LB for pumping the paramagnetic centers of the crystals or diamond nanocrystals ND, which preferably comprise diamond. The pump radiation LB has a pump radiation wavelength pmpIf other defect centers are used as NV centers in diamond material, a proposed device or method can use light or electromagnetic radiation of other pump radiation wavelengths pmp as pump radiation LB. The sensor systems proposed here preferably use HD-NV diamonds (HDNV) with a respective high density of paramagnetic centers in the form of NV centers as sensor elements SE, which measure the intensity I ist of the fluorescence radiation FL of the paramagnetic centers when irradiated with pump radiation LB. It has been shown that in conjunction with NV centers in diamond material as paramagnetic centers of the crystals or diamond nanocrystals, light with a pump radiation wavelength of the pump radiation LB of at most 700nm and at least 500nm is particularly suitable as pump radiation LB. In connection with the use of crystals of other materials instead of the diamond nanocrystals or as a supplement for the sensor element SE and correspondingly other paramagnetic centers, completely different wavelength ranges of the pump radiation wavelength can be achieved. pmp the pump radiation LB fulfill the same functions in the modified sensor system. Therefore, the NV centers here represent only one example of an embodiment of such a paramagnetic center. In particular, when using an NV center in diamond material as a paramagnetic center in the crystals or diamond nanocrystals ND, the pump radiation LB should have a pump radiation wavelength pmpin a wavelength range of 400 nm to 700 nm and / or better 450 nm to 650 nm and / or better 500 nm to 550 nm and / or better 515 nm to 540 nm. A wavelength of 532 nm is clearly preferred as the pump radiation wavelength. pmpLight or electromagnetic pump radiation LB, which is used when using other paramagnetic centers, in particular in materials other than NV centers in diamond material to perform the same functions, is also possible. The proposed sensor systems are therefore also applicable to other suitable paramagnetic centers, such as SiV center and / or TiV center and / or GeV center and / or SnV center and / or NiN4 center and / or PbV center and / or ST1 center etc. However, the NV center in diamond material is particularly suitable and can be produced particularly well, e.g. as described above, and in high density with a high production yield. Advantageously, the pump radiation LB of the respective pump radiation source, here the light sources LED1, LED2, which are preferably a laser or an LED, is temporally modulated with a respective modulation signal.The respective LED modulation signal S5w1, S5w2 is preferably used as the respective measurement signal, i.e. as a reference signal, for a look-in amplifier, here the transmitting and evaluating device LIV, in order to convert the modulation of the intensity I into modulated electrical currents, in particular photoelectron currents or voltages, for example of a receiver output signal S01, S02. fl1 , I fl2to amplify the fluorescence radiation FL1 and FL2 with low noise. In this context, the document presented here refers to Staacke, R., John, R., Wunderlich, R., Horsthemke, L., Knolle, W., Laube, C., Glösekötter, P., Burchard, B., Abel, B., Meijer, J. (2020), "Isotropic Scalar Quantum Sensing of Magnetic Fields for Industrial Application", Adv. Quantum Technol., doi:10.1002 / qute.202000037. We refer in particular to Figures 3b and 3d of that document. Furthermore, the document presented here refers to the documents DE 102021132780 A1, DE 102021132781 A1, DE 102021132 782 A1, DE 102021132783 A1, DE 102021132784 A1, DE 102021132785 A1, DE 102021132786 A1, DE 102021132787 A1, DE 102021132788 A1, DE 102021132790 A1, DE 102021132791 A1, DE 102021132793 A1, DE 102021132794 A1. Diamond nanocrystals as crystals The technical teaching presented here preferably uses HD-NV diamond crystals of the sensor elements SE.The document presented here refers in this context to the document DE 102020109477 A1. Essentially The term "essentially" in the sense of the document presented here means that deviations from an ideal value are permitted, but the resulting technical effects impair the intended purpose of the method or device only so little that the usability of the technical device or technical method for a user is not impaired or is impaired only so little that the user rates the actual technical effect as sufficient in comparison to the ideal technical effect. Crystal (HDNV) The object which the text presented here refers to as a crystal (HDNV) preferably comprises a monocrystalline material.Unless the material is monocrystalline, the partial crystals should preferably be monocrystalline and preferably aligned to such an extent that the fluorescence characteristics are expressed in essentially the same way. The preferred material of the crystal (HDNV) is diamond. In this regard, the document presented here refers to DE 102021132783 A1. Several sensor elements SE1 to SE. n For the purposes of the document presented here, different areas of a sensor element SE do not represent several sensor elements SE1 to SE n Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 73 / 109 Instead of using two sensor elements SE1 and SE2, the document presented here also discloses the use of n sensor elements SE1 to SE n, with n as a positive integer. The devices in the figures must be extended by the corresponding measuring channels for each additional sensor element SEj with j as a positive integer with 2>jn. In the case of Figure 6, this means for each additional sensor element SE j , an additional measuring channel, which according to Figure 6 comprises an additional output channel of the digital-to-analog converter DAC, an additional j-th LED modulation signal S5w j , an additional j-th driver DRV j , an additional j-th transmission signal S5 j , an additional j-th pump radiation source LED j , additional j-th paramagnetic centers NV j , an additional j-th carrier material TM j , an additional j-th optical fiber LWL j , an additional j-th dichroic mirror DM j , an additional j-th photodetector PD j , an additional j-th receiver output signal S0 j, an additional j-th amplifier V1 j , an additional j-th amplified receiver output signal S1 j, an additional input of the multi-channel analog-to-digital converter (ADC). The computer system RSYS of the current sensor in Figure 6 then evaluates these additional signals in a manner analogous to the methods described here. Concluding Remarks The above description does not claim to be complete and does not limit this disclosure to the examples shown. Those with ordinary specialist knowledge in the field can deduce, understand, and implement other co-disclosed variations of the sampled individual examples specifically described in this document based on the drawings, the disclosure, and the claims. The indefinite articles "a" or "an" and their inflections do not exclude a plurality, while the mention of a specific number of elements does not exclude the possibility of more or fewer elements being present.A single unit can fulfill the functions of several elements mentioned in the disclosure, and conversely, several elements can fulfill the function of a unit. Numerous alternatives, equivalents, variations and combinations are possible without departing from the scope of the present disclosure. Unless otherwise stated, those with ordinary skill in the art can freely combine all features of the present invention with one another, provided such combinations are reasonable. This applies to the entire document presented here. Those with ordinary skill in the art can also freely combine the features described in the figure description as features of the invention with the other features, unless otherwise stated.A restriction of individual features of the embodiments to combination with other features of the embodiments is expressly not intended. Furthermore, physical features of the device can be reformulated as method features, and method features can be reformulated as physical features of the device. Such reformulation is therefore automatically disclosed. In the preceding detailed description, reference is made to the accompanying figures. Those having ordinary skill in the art should consider the examples in the description and figures as illustrative and not as limiting the specific example or element described.Those with ordinary skill in the art can derive several examples from the preceding description and / or the figures and / or the claims by modifying, combining, or varying certain elements. Furthermore, a person skilled in the art can derive examples or elements that the document presented here does not literally describe from the description and / or the drawings and / or the claims. Those with ordinary skill in the art can combine features disclosed in different places in this document, and in particular the list of features, provided that this combination makes sense. The references used in the list of features are exemplary and expressly do not limit the disclosure of possible features and sub-feature combinations. The applicable claim arises from the claims.Those with ordinary skill in the art should consult the relevant passages of text for the interpretation of the claims. Even if no device that carries out this method step is disclosed at the corresponding points in this text relating to methods and method steps, this document hereby discloses a device and / or a device part that can carry out this method step. Those with ordinary skill in the art can combine this device part with other devices and / or device parts if this is appropriate. The functions of the devices and device parts disclosed in this document correspond to method steps that these device parts carry out. Those with ordinary skill in the art can combine these method steps with one another and with method steps to form methods.Such methods are expressly incorporated into the disclosure. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 75 / 109 List of cited documents If, within the scope of the nationalization of a subsequent international application, the law of the respective legal system of the state in which the international application of the document presented here is nationalized permits disclosure by reference, the content of the following documents is fully incorporated into the disclosure presented here.Patent-Literature CN 116794384 A, DE 102020101784 B3, DE 102020109477 A1, DE 102021132780 A1, DE 102021132781 A1, DE 10202111 A1, DE 102021132783 A1, OF 102021132784 A1, OF 102021132785 A1, OF 102021132786 A1, OF OF 102021132791 A1, OF 102021132793 A1, OF 102021132794 A1, OF 102022004475 A1, OF 102022005094 A1, OF A1, DE 102023111858 A1, DE 102023122656 A1, DE 102023122657 A1, DE 202020106110 U1, US 2015 / 0326223 A1, US 2023 / 0326223 A1, US 2023 / 0326223 A1, US 2023 / 1030 WO30 2021089091 A1 (PCT / DE 2020 / 100953), WO 2020089465 A2 (PCT / EP 2019 / 079992), WO 2020260640 A1 (PCT / EP 2020 / 0689064), WO 20184 A1 (PCT / EP 2020 / 070485), WO 2021151429 A2 (PCT / DE 2021 / 100069), WO 2021083448 A1 (PCT / DE 2020 / 100827), WO 2020239 (PCT / DE 2020 / DE 100430), WO 2021013308 A1 (PCT / DE 2020 / 100648), WO 2001073935 A1, WO 2024041703 A1 (PCT / DE 2023 / 100614). Non-Patent Literature AMZaitsev “Optical Properties of Diamond, A Data Handbook”, Springer 2001 ISBN 978-3-662- 04548-0 Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 76 / 109 List of reference symbols ADC Multi-channel analog-to-digital converter (ADC); ag1first air gap (ag1); ag2second air gap (ag2); ag3third air gap (ag3); ag4fourth air gap (ag4); ag. n nth air gap (ag n); AOX covering oxide (AOX); b1first meander loop spacing (b1) of the line (LTG) in the first meander loop (MSL1); B1first magnetic flux density (B1) at the location of the first sensor element (SE1); b2second meander loop spacing (b2) of the line (LTG) in the second meander loop (MSL2); B2second magnetic flux density (B2) at the location of the second sensor element (SE2); b3third meander loop spacing (b3) of the line (LTG) in the third meander loop (MSL3); B3third magnetic flux density (B3) at the location of the third sensor element (SE3); b4fourth meander loop spacing (b4) of the line (LTG) in the fourth meander loop (MSL4); B4fourth magnetic flux density (B4) at the location of the fourth sensor element (SE4); b n n-th meander loop spacing (b n ) of the line (LTG) in the n-th meander loop (MSL n ); B n n-th magnetic flux density (B n ) at the location of the n-th sensor element (SE n); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 77 / 109 BA Barrier (BA); BB11 first area (BB11) of the first sensor element (SE1); BB12 second area (BB12) of the second sensor element (SE2); BB13 third area (BB13) of the third sensor element (SE3); BB14 fourth area (BB14) of the fourth sensor element (SE4); BB1 n nth first area (BB1 n ) of the nth sensor element (SE n ); BB21 first second area (BB21) of the first sensor element (SE1); BB22 second second area (BB22) of the second sensor element (SE2); BB23 third second area (BB23) of the third sensor element (SE3); BB24 fourth second area (BB24) of the fourth sensor element (SE4); BB2 n nth second area (BB2 n ) of the nth sensor element (SE n); BB31first third area (BB31) of the first sensor element (SE1); BB32second third area (BB32) of the second sensor element (SE2); BB33third third area (BB33) of the third sensor element (SE3); BB3 4th third area (BB34) of the fourth sensor element (SE4 ); BB3 n nth third area (BB3 n ) of the nth sensor element (SE n ); BE semiconductor switch, which is typically a switch (T2); BFE fastening element (BFE); CTR control device (CTR) with a computer system (RSYS) with a computer core (μC); fl1(|B1(ILTG)|) first delay ( fl1(|B1(ILTG)|)) of the first time course of the first fluorescence intensity (I fl1 (|B2(I LTG)|)) of the first fluorescence radiation (FL1) of the first NV centers (NV1) and / or first paramagnetic centers (NV1) of the first isotropic sensor element (SE1) compared to Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 78 / 109 the first temporal profile of the first pump radiation intensity (I pmp1 (t)) of the first pump radiation (LB1) with a first optical pump radiation wavelength ( pmp1) and with a first pump radiation intensity (I pmp1 (t)) of the first pump radiation (LB1); fl2(|B2(ILTG)|) second delay ( fl2(|B2(ILTG)|)) of the second time course of the second fluorescence intensity (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2) of the second NV centers (NV2) and / or second paramagnetic centers (NV2) of the second isotropic sensor element (SE2) compared to the second time profile of the second pump radiation intensity (I pmp2(t)) of the second pump radiation (LB2) with a second optical pump radiation wavelength ( pmp2) and with a second pump radiation intensity (I pmp2 (t)) of the second pump radiation (LB2);fl3(|B1(ILTG)|) third delay (fl3(|B3(ILTG)|)) of the third time course of the third fluorescence intensity (I fl3 (|B2(I LTG )|)) of the third fluorescence radiation (FL3) of the third NV centers (NV1) and / or third paramagnetic centers (NV3) of the third isotropic sensor element (SE3) compared to the third time profile of the third pump radiation intensity (I pmp3 (t)) of the third pump radiation (LB3) with a third optical pump radiation wavelength ( pmp3) and with a third pump radiation intensity (I pmp3 (t)) of the third pump radiation (LB3);fl4(|B4(ILTG)|) fourth delay (fl4(|B4(ILTG)|)) of the fourth time course of the fourth fluorescence intensity (I fl4 (|B4(I LTG)|)) of the fourth fluorescence radiation (FL4) of the fourth NV centers (NV4) and / or fourth paramagnetic centers (NV4) of the fourth isotropic sensor element (SE4) compared to the fourth time course of the fourth pump radiation intensity (I pmp4 (t)) of the fourth pump radiation (LB4) with a fourth optical pump radiation wavelength ( pmp4) and with a fourth pump radiation intensity (I pmp4 (t)) of the fourth pump radiation (LB4); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 79 / 109 fln(|B1(ILTG)|) n-th delay ( fln(|Bn(ILTG)|)) of the n-th time course of the n-th fluorescence intensity (Ifln(|B2(ILTG)|)) of the n-th fluorescence radiation (FL n ) of the n-th NV centers (NV n ) and / or n-th paramagnetic centers (NV n ) of the n-th isotropic sensor element (SE n ) compared to the n-th time course of the n-th pump radiation intensity (I pmpn(t)) of the n-th pump radiation (LB n ) with an n-th optical pump radiation wavelength ( pmpn) and with an n-th pump radiation intensity (I pmpn (t)) of the n-th pump radiation (LB n ); fl1(|B1(ILTG)|) first delay ( fl1(|B1(ILTG)|)) of the first time course of the first fluorescence intensity (I fl1 (|B2(I LTG )|)) of the first fluorescence radiation (FL1) of the first NV centers (NV1) and / or first paramagnetic centers (NV1) of the first isotropic sensor element (SE1) compared to the first temporal profile of the first pump radiation intensity (I pmp1 (t)) of the first pump radiation (LB1) with a first optical pump radiation wavelength ( pmp1) and with a first pump radiation intensity (I pmp1(t)) of the first pump radiation (LB1); DAC digital-to-analog converter (DAC); DB data bus (DB) of the computer system (RSYS); DBINF data interface (DBINF) of the computer system (RSYS); DM dichroic mirror (DM); DM1 first dichroic mirror (DM1) of the first measuring channel with the first sensor element (SE1); DM2 second dichroic mirror (DM2) of the second measuring channel with the second sensor element (SE2); DM3 third dichroic mirror (DM3) of the third measuring channel with the third sensor element (SE3); DM4 fourth dichroic mirror (DM4) of the fourth measuring channel with the fourth sensor element (SE4); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 80 / 109 DM n nth dichroic mirror (DM n ) of the n-th measuring channel with the n-th sensor element (SE n); DRV1first driver (DRV1) of the first measuring channel with the first sensor element (SE1); DRV2second driver (DRV2) of the second measuring channel with the second sensor element (SE2); DRV3third driver (DRV3) of the third measuring channel with the third sensor element (SE3); DRV4fourth driver (DRV4) of the fourth measuring channel with the fourth sensor element (SE4); DRV n nth driver (DRV n ) of the n-th measuring channel with the n-th sensor element (SE n ); EB1 first end fitting (EB1) of the insulating body (IK); EB2 second end fitting (EB2) of the insulating body (IK); EXTDB data transmission channel; F11 first filter (F1); F12 second filter (F2); F1 first filter (F1); F2 second filter (F2); F2 filter layer (F2); FIB1 first fluorescence intensity range (FIB1); FIB11 first fluorescence intensity range (FIB11) of the first sensor element (SE1); FIB12 second first fluorescence intensity range (FIB12) of the second sensor element (SE2); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 81 / 109 FIB13 third first fluorescence intensity range (FIB13) of the third sensor element (SE3); FIB14 fourth first fluorescence intensity range (FIB14) of the fourth sensor element (SE4); FIB1 n n-th first fluorescence intensity range (FIB1 n ) of the nth sensor element (SE n); FIB2 second fluorescence intensity range (FIB2); FIB21 first second fluorescence intensity range (FIB21) of the first sensor element (SE1); FIB22 second second fluorescence intensity range (FIB22) of the second sensor element (SE2); FIB23 third second fluorescence intensity range (FIB23) of the third sensor element (SE3); FIB24 fourth second fluorescence intensity range (FIB24) of the fourth sensor element (SE4); FIB2 n n-th second fluorescence intensity range (FIB2 n ) of the nth sensor element (SE n ); FL Fluorescence radiation (FL) of a sensor element (SE); FL1first fluorescence radiation (FL1) of the first sensor element (SE1); FL2second fluorescence radiation (FL2) of the second sensor element (SE2); FL3third fluorescence radiation (FL3) of the third sensor element (SE3); FL4fourth fluorescence radiation (FL4) of the fourth sensor element (SE4); FL n n-th fluorescence radiation (FL n ) of the nth sensor element (SE n); FOX field oxide (FOX); GND reference potential line (GND); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 82 / 109 GNDref reference potential line (GNDref); HB cover (HB); H LTG by the line current (I LTG ) magnetic excitation (H LTG ) in the magnetic circuit (MK); I fl (t) Fluorescence radiation intensity (I fl (t)) of the fluorescence radiation (Fl) of a sensor element (SE) as a function of time (t); Ifl1(t) first fluorescence radiation intensity (Ifl1(t)) of the first fluorescence radiation (Fl1) of the first sensor element (SE1) as a function of time (t); I fl2 (t) second fluorescence radiation intensity (I fl2 (t)) of the second fluorescence radiation (Fl2) of the second sensor element (SE2) as a function of time (t); I fl3 (t) third fluorescence radiation intensity (I fl3(t)) of the third fluorescence radiation (Fl3) of the third sensor element (SE3) as a function of time (t); I fl4 (t) fourth fluorescence radiation intensity (I fl4 (t)) of the fourth fluorescence radiation (Fl4) of the fourth sensor element (SE4) as a function of time (t); I fln (t) n-th fluorescence radiation intensity (I fln (t)) of the n-th fluorescence radiation (Fl n ) of the nth sensor element (SE n ) as a function of time (t); I fl (|B|) Fluorescence radiation intensity (I fl (t)) the fluorescence radiation (Fl) of a sensor element (SE) as a function of the magnitude of the magnetic flux density (B) at the location of the sensor element (SE); I fl1 (|B1|) first fluorescence radiation intensity (I fl1(|B1|)) of the first fluorescence radiation (FL1) of the first sensor element (SE1) as a function of the magnitude (|B1|)) of the first magnetic flux density (B1) at the location of the first sensor element (SE1); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 83 / 109 I fl2 (|B2|) second fluorescence radiation intensity (I fl2 (|B2|)) of the second fluorescence radiation (FL2) of the second sensor element (SE2) as a function of the magnitude (|B2|)) of the second magnetic flux density (B2) at the location of the second sensor element (SE2); I fl3 (|B3|) third fluorescence radiation intensity (I fl3 (|B3|)) of the third fluorescence radiation (FL3) of the third sensor element (SE3) as a function of the magnitude (|B3|)) of the third magnetic flux density (B3) at the location of the third sensor element (SE3); I fl4 (|B4|) fourth fluorescence radiation intensity (I fl4(|B4|)) of the fourth fluorescence radiation (FL4) of the fourth sensor element (SE4) as a function of the magnitude (|B4|)) of the fourth magnetic flux density (B4) at the location of the fourth sensor element (SE4); I fln (|B n |) n-th fluorescence radiation intensity (I fln (|B n |)) of the n-th fluorescence radiation (FL n ) of the nth sensor element (SE n ) depending on the amount (|B n |)) of the n-th magnetic flux density (B n ) at the location of the n-th sensor element (SE n ); I flmax1 (|B1(I LTG )|) maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element Fluorescence radiation (FL3(I LTG )) of the isotropic third sensor element (SE3); I flmax4 (|B4(I LTG )|) maximum fourth fluorescence intensity (I flmax4 (|B1(I LTG)|)) of the fourth fluorescence radiation (FL4(I LTG )) of the isotropic fourth sensor element (SE4); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 84 / 109 I flmaxn (|B n (I LTG )|) maximum n-th fluorescence intensity (I flmaxn (|B1(I LTG )|)) of the n-th fluorescence radiation (FL n (I LTG )) of the isotropic n-th sensor element (SE n ); IK insulating body (IK); I LTG electric current (I LTG ) in the line (LTG); I LTG1ü first transition current value (I LTG1ü ); of the first sensor element (SE1) ILTG2ü first transition current value (ILTG2ü) of the second sensor element (SE2); I LTG3ü first transition current value (I LTG3ü ) of the third sensor element (SE3); I LTG4ü first transition current value (I LTG4ü ) of the fourth sensor element (SE4); I LTGnü first transition current value (I LTGnü ) of the nth sensor element (SE n ); I LTGmax1maximum electrical current (I) that can be detected by the first sensor element (SE1) LTG ) in the line (LTG); I LTGmax2 maximum electrical current (I) that can be detected by the second sensor element (SE2) LTG ) in the line (LTG); I LTGmax3 maximum electrical current (I) that can be detected by the third sensor element (SE3) LTG ) in the line (LTG); I LTGmax4 maximum electrical current (I) that can be detected by the fourth sensor element (SE4) LTG ) in the line (LTG); I LTGmaxn maximum by the n-th sensor element (SE n ) detectable electric current (I LTG ) in the line (LTG); I pmp (t) Pump radiation intensity (I pmp (t)) of the pump radiation (LB) for a sensor element (SE); I pmp1 (t) first pump radiation intensity (I pmp1 (t)) of the first pump radiation (LB1) for the first sensor element (SE1); second pump radiation intensity (I pmp2(t)) of the second pump radiation (LB2) for the second sensor element (SE2); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 85 / 109 I pmp3 (t) third pump radiation intensity (I pmp3 (t)) the third pump radiation (LB3) for the third sensor element (SE3); I pmp4 (t) fourth pump radiation intensity (I pmp4 (t)) of the fourth pump radiation (LB4) for the fourth sensor element (SE4); I pmpn (t) n-th pump radiation intensity (I pmpn (t)) of the n-th pump radiation (LB n ) for the n-th sensor element (SE n); K1 first calibration constant; K2 second calibration constant; fl fluorescence radiation wavelength (fl) of the fluorescence radiation (FL) of a sensor element (SE); fl1 first fluorescence radiation wavelength (fl1) of the first fluorescence radiation (FL1) of the first sensor element (SE1); fl2 first fluorescence radiation wavelength (fl2) of the second fluorescence radiation (FL2) of the second sensor element (SE2); fl3 first fluorescence radiation wavelength (fl3) of the third fluorescence radiation (FL3) of the third sensor element (SE3); fl4 first fluorescence radiation wavelength (fl4) of the fourth fluorescence radiation (FL4) of the fourth sensor element (SE4); fln first fluorescence radiation wavelength (fln) of the nth fluorescence radiation (FL n ) of the nth sensor element (SE n); Pump radiation wavelength (pmp) of the pump radiation (LB); first pump radiation wavelength (pmp1) of the first pump radiation (LB1) for the first sensor element (SE1) pmp2 second pump radiation wavelength (pmp2) of the second pump radiation (LB2) for the first sensor element (SE2) Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 86 / 109 pmp3 third pump radiation wavelength (pmp3) of the third pump radiation (LB3) for the first sensor element (SE3) pmp4 fourth pump radiation wavelength (pmp4) of the fourth pump radiation (LB4) for the first sensor element (SE4) pmpn n-th pump radiation wavelength (pmpn) of the n-th pump radiation (LBn) for the first sensor element (SE n ) LB pump radiation (LB) of a sensor element (SE); LB1first pump radiation (LB1); LB2second pump radiation (LB2); LB3third pump radiation (LB3); LB4fourth pump radiation (LB4); LB n n-th pump radiation (LB n); LED1first pump radiation source (LED1) for the first sensor element (SE1); LED2second first pump radiation source (LED2) for the second sensor element (SE2); LED3third pump radiation source (LED3) for the third sensor element (SE3); LED4fourth pump radiation source (LED4) for the fourth sensor element (SE4); LED n n-th pump radiation source (LED n ) for the n-th sensor element (SE n ); LED s Switch LED (LED s): LIV control and evaluation device (LIV); LTG line (LTG); LTG* conductor section (LTG*) of the line (LTG); LTGa1first conductor section (LTGa1) of the first meander loop (MSL1) of the line (LTG); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 87 / 109 LTGa2second conductor section (LTGa1) of the second meander loop (MSL2) of the line (LTG); LTGa3third conductor section (LTGa1) of the third meander loop (MSL3) of the line (LTG); LTGa4fourth conductor section (LTGa1) of the fourth meander loop (MSL4) of the line (LTG); LTGa n n-th first conductor section (LTGa1) of the n-th meander loop (MSL n) of the line (LTG); LTGb1first second conductor section (LTGb1) of the first meander loop (MSL1) of the line (LTG); LTGb2second second conductor section (LTGb2) of the second meander loop (MSL2) of the line (LTG); LTGb3third second conductor section (LTGb3) of the third meander loop (MSL3) of the line (LTG); LTGb4fourth second conductor section (LTGb4) of the fourth meander loop (MSL4) of the line (LTG); LTGb n n-th second conductor section (LTGb n ) of the n-th meander loop (MSL n) of the cable (LTG); LWL1 first optical fiber (LWL1); LWL11 first optical fiber (LWL11) of the first measuring channel of the first sensor element (SE1); LWL12 second first optical fiber (LWL12) of the second measuring channel of the second sensor element (SE2); LWL13 third first optical fiber (LWL13) of the third measuring channel of the third sensor element (SE3); LWL14 fourth first optical fiber (LWL14) of the fourth measuring channel of the fourth sensor element (SE4); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 88 / 109 LWL1 n nth first optical fiber (LWL1 n ) of the n-th measuring channel of the n-th sensor element (SE n); LWL2 second optical fiber (LWL2); LWL21 first second optical fiber (LWL21) of the first measuring channel of the first sensor element (SE1); LWL22 second second optical fiber (LWL22) of the second measuring channel of the second sensor element (SE2); LWL23 third second optical fiber (LWL23) of the third measuring channel of the third sensor element (SE3); LWL24 fourth second optical fiber (LWL24) of the fourth measuring channel of the fourth sensor element (SE4); LWL2 n nth second optical fiber (LWL2 n ) of the n-th measuring channel of the n-th sensor element (SE n ); LWL3 third optical fiber (LWL3); μC computer core (μC) of the computer system (RSYS); MEM memory (MEM) of the computer system (RSYS); MK magnetic circuit; MK1 first magnetic circuit (MK1); MK2 second magnetic circuit (MK2); third magnetic circuit (MK3); MK4 fourth magnetic circuit (MK4); MKn n-th magnetic circuit (MKn); MSL1 first meander loop (MSL1) of the line (LTG); MSL2 second meander loop (MSL2) of the line (LTG); MSL3 third meander loop (MSL3) of the line (LTG); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 89 / 109 MSL4 fourth meander loop (MSL4) of the line (LTG); MSL n n-th meander loop (MSL n ) of the line (LTG); NKB n+ contact area (NKB); NV1 one or more first NV centers (NV1) and / or one or more first paramagnetic centers (NV1); NV2 one or more second NV centers (NV2) and / or one or more second paramagnetic centers (NV2); NV3 one or more third NV centers (NV3) and / or one or more third paramagnetic centers (NV3); NV4 one or more fourth NV centers (NV4) and / or one or more fourth paramagnetic centers (NV4); NV n one or more n-th NV centers (NV n ) and / or one or more n-th paramagnetic centers (NVn ); NVM one or more non-volatile memories (NVM); NW N-well (NW); magnetic flux (LTG); first magnetic partial flux (ag1) in the first air gap (ag1); ag2 second magnetic partial flux (ag2) in the second air gap (ag2); ag3 third magnetic partial flux (ag3) in the third air gap (ag3); ag4 fourth magnetic partial flux (ag4) in the fourth air gap (ag4); agn n-th magnetic partial flux (agn) in the n-th air gap (agn); PD1 first photodetector (PD1) of the first measuring channel with the first sensor element (SE1); PD2 second photodetector (PD2) of the second measuring channel with the second sensor element (SE2); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 90 / 109 PD3 third photodetector (PD3) of the third measuring channel with the third sensor element (SE3); PD4 fourth photodetector (PD4) of the fourth measuring channel with the fourth sensor element (SE4); PD n nth photodetector (PD n) of the n-th measuring channel with the n-th sensor element (SE n ); P LTG electrical power (P) transported through the electrical line (LTG) LTG ); PW P-well (PW); RAM one or more volatile memories (RAM); RCOMP one or more other computer systems (RCOMP); Ri ribs (RI); RSYS computer system (RSYS); S01 first receiver output signal (S01) of the first measuring channel with the first sensor element (SE1); S02 second receiver output signal (S02) of the second measuring channel with the second sensor element (SE2); S03 third receiver output signal (S03) of the third measuring channel with the third sensor element (SE3); S04 fourth receiver output signal (S04) of the fourth measuring channel with the fourth sensor element (SE4); S0 n n-th receiver output signal (S0 n ) of the n-th measuring channel with the n-th sensor element (SE n); S11 amplified first receiver output signal (S11) of the first measuring channel with the first sensor element (SE1); S12 amplified second receiver output signal (S12) of the second measuring channel with the second sensor element (SE2); Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 91 / 109 S13 amplified third receiver output signal (S13) of the third measuring channel with the third sensor element (SE3); S14 amplified fourth receiver output signal (S14) of the fourth measuring channel with the fourth sensor element (SE4); S1 n amplified n-th receiver output signal (S1 n ) of the n-th measuring channel with the n-th sensor element (SE n ); S52S5w1S5w2optical control radiation (SB) for actuating the switch (T2); SDRV switch driver (SDRV); SubC substrate contact (SubC); SE1first isotropic sensor element (SE1); SE2 second isotropic sensor element (SE2); SE3third isotropic sensor element (SE3); SE4fourth isotropic sensor element (SE4); SEn nth isotropic sensor element (SE n ); SL1first slot (SL1) of the first meander loop (MSL1); SL2second slot (SL2) of the second meander loop (MSL2); SL3third slot (SL3) of the third meander loop (MSL3); fourth slot (SL4) of the fourth meander loop (MSL4); SL n nth slot (SL n ) of the n-th meander loop (MSL n); Sub substrate (Sub), which is preferably semiconducting. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 92 / 109 (t) common temperature ( (t));1(t) first temperature ( 1(t)) of the first sensor element (SE1);2(t) second temperature ( 2(t)) of the second sensor element (SE2);3(t) third temperature ( 3(t)) of the third sensor element (SE3);4(t) fourth temperature ( 4(t)) of the fourth sensor element (SE4);n(t) n-th temperature ( n(t)) of the n-th sensor element (SEn);T2 switch (T2); TM carrier material (TM) of a sensor element (SE); TM1 first carrier material (TM1) of the first sensor element (SE1); TM2second carrier material (TM2) of the second sensor element (SE2); TM3third carrier material (TM3) of the third sensor element (SE3); TM4fourth carrier material (TM4) of the fourth sensor element (SE4); TM n n-th carrier material (TM n ) of the nth sensor element (SE n); V11first amplifier (V11); V12second amplifier (V12); V(t) voltage values ​​(V(t)); VM voltage measuring device (VM);

Claims

Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 93 / 109 Claims 1. Current sensor with an electrical conductor (LTG), wherein the current sensor comprises first means (PD, LWL1, LWL, DM, F1, TM, SE) and second means, wherein the first means are configured to - first NV centers (NV1) and / or first paramagnetic centers (NV1) of a first isotropic sensor element (SE1) with first pump radiation (LB) with a first optical P umpstrahlungswellenlänge ( pmp1) und mit einer ersten Pumpstrahlungsintensität (Ipmp1(t)) the first pump radiation (LB1), and - a first fluorescence radiation (FL1) of the first NV centers (NV1) and / or the first p aramagnetischen Zentren (NV1) mit einer ersten Fluoreszenzstrahlungswellenlänge ( fl1) to separate, and - a first fluorescence intensity (I fl1 (t)) of the first fluorescence radiation (FL1) of the first NV centers (NV1) and / or the first paramagnetic centers (NV1) in the form of a first intensity value, and / or - eine erste Verzögerung ( fl1(t)) des ersten zeitlichen Verlaufs der ersten Fluorescence intensity (I fl1(t)) of the first fluorescence radiation (FL1) of the first NV centers (NV1) and / or the first paramagnetic centers (NV1) compared to the first time profile of the first pump radiation intensity (I pmp1 (t)) of the first pump radiation ( LB1) mit einer ersten optischen Pumpstrahlungswellenlänge ( pmp1) und mit einer ersten Pump radiation intensity (I pmp1 (t)) of the first pump radiation (LB1) in the form of a first delay value, and wherein the second means are configured to - irradiate second NV centers (NV2) and / or second paramagnetic centers (NV2) of a second isotropic sensor element (SE2) with second pump radiation (LB2), and - a second fluorescence radiation (FL2) of the second NV centers (NV2) and / or the second p aramagnetischen Zentren (NV2) mit einer zweiten Fluoreszenzstrahlungswellenlänge ( fl2) and - a second fluorescence radiation intensity (I fl2 (t)) of the second fluorescence radiation (FL2) of the second NV centers (NV2) and / or the second paramagnetic centers (NV2) in the form of a second intensity value, and / or - eine zweite zeitliche Verzögerung ( fl2(t)) des zweiten zeitlichen Verlaufs der zweitenFluorescence radiation intensity (Ifl2(t)) of the second fluorescence radiation (FL2) of the second NV centers (NV2) and / or the second paramagnetic centers (NV2) compared to the Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 94 / 109 second temporal profile of the second pump radiation intensity (I pmp2 (t)) of the pump radiation (LB2) in the form of a second delay value, characterized in that the current sensor is designed such that a current flow of an electric current (I LTG) in the electrical conductor (LTG) generates a magnetic field in the vicinity of the conductor (LTG), and that the current sensor is configured such that the magnetic field flows through the first NV centers (NV) and / or the first paramagnetic centers (NV) with a first magnetic flux density B1, and that the current sensor is configured such that the magnetic field flows through the second NV centers (NV) and / or the second paramagnetic centers (NV) with a second magnetic flux density B2, and that the current sensor is configured such that a first amount of the first magnetic flux density B1 is different from a second amount of the second magnetic flux density B2, and that the current sensor has fourth means (CTR) which are configured to - the detected first intensity (I fl1 (t)) of the first fluorescence radiation (FL1) and / or - der erfassten ersten zeitlichen Verzögerung ( fl1(t)) des ersten zeitlichen Verlaufs der ersten Fluorescence intensity (I fl1(t)) of the first fluorescence radiation (FL1) and - the detected second fluorescence intensity (I fl2 (t)) of the second fluorescence radiation (FL2) and / or - der erfassten zweiten zeitlichen Verzögerung ( fl2(t)) des zweiten zeitlichen Verlaufs der second fluorescence intensity (I fl2 (t)) of the second fluorescence radiation (FL2) - to the current value of the electric current (I LTG) in the line (LTG) and, if necessary, to keep it ready, to store and / or to transmit and / or to output it.

2. Current sensor according to claim 1, wherein the isotropic first sensor element (SE1) comprises a plurality of randomly and preferably statistically evenly distributed differently oriented first crystals with the one or more first paramagnetic centers (NV1) and / or the one or more first NV centers (NV1), and wherein the isotropic second sensor element (SE2) comprises a plurality of randomly and preferably statistically evenly distributed differently oriented second crystals with the one or more second paramagnetic centers (NV2) and / or the one or more second NV centers (NV2), and Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 95 / 109 wherein the current sensor is configured to irradiate the isotropic first sensor element (SE1) and the isotropic second sensor element (SE2) with electromagnetic radiation having one or more wavelengths of a first wavelength range and with optional electromagnetic radiation having one or more wavelengths of a second wavelength range, but at least microwave-free, - wherein the first wavelength range comprises wavelengths from 1 nm to 1 mm and - wobei die erste Pumpstrahlungswellenlänge ( pmp1) der ersten Pumpstrahlung (LB1) in dem first wavelength range and - wobei die zweite Pumpstrahlungswellenlänge ( pmp2) der zweiten Pumpstrahlung (LB2) inthe first wavelength range and - wherein the second wavelength range comprises wavelengths from 30 cm to infinity, i.e. a frequency range from 0 Hz to 1 GHz, and wherein the current sensor is set up so that - electromagnetic radiation of a third wavelength range from 30 cm to 1 mm, i.e. the microwave range, cannot irradiate the first paramagnetic centers (NV1) and / or the isotropic first sensor element (SE1) and cannot irradiate the second paramagnetic centers (NV2) and / or the isotropic second sensor element (SE2) and / or - that electromagnetic radiation of the third wavelength range from 30 cm to 1 mm does not influence the first paramagnetic centers (NV1) and / or the isotropic first sensor element (SE1) and does not influence the second paramagnetic centers (NV2) and / or the isotropic second sensor element (SE2).- and / or wherein the sensor system is configured to irradiate the isotropic first sensor element (SE1) with a first electromagnetic radiation of the first wavelength range with a first wavelength range intensity relative to the irradiation energy and wherein the sensor system is configured to irradiate the isotropic second sensor element (SE2) with a second electromagnetic radiation of the first wavelength range with a second wavelength range intensity relative to the irradiation energy and wherein the sensor system is configured to irradiate the isotropic first sensor element (SE1) with a first electromagnetic radiation of the second wavelength range with a. Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 96 / 109 first second wavelength range intensity based on the irradiation energy and wherein the sensor system is set up to irradiate the isotropic second sensor element (SE2) with a second second electromagnetic radiation of the second wavelength range with a second second wavelength range intensity based on the irradiation energy and so that the total irradiation intensity is the sum of the amounts of the first first wavelength range intensity plus the first second wavelength range intensity plus the second first wavelength range intensity plus the second second wavelength range intensity and wherein the current sensor is set up so that a third irradiation intensity of an electromagnetic radiation of a third wavelength range from 30 cm to 1 mm, i.e. the microwave range,based on the irradiation energy that irradiates the isotropic first sensor element (SE1) and the isotropic second sensor element (SE2) in total - is less than 10% of the total irradiation intensity and / or - is less than 5% of the total irradiation intensity and / or - is less than 2% of the total irradiation intensity and / or - is less than 1% of the total irradiation intensity and / or - is less than 0.5% of the total irradiation intensity and / or - is less than 0.2% of the total irradiation intensity and / or - is less than 0.1% of the total irradiation intensity and / or - is less than 0.05% of the total irradiation intensity and / or - is less than 0.02% of the total irradiation intensity and / or - is less than 0.01% of the total irradiation intensity and / or - is less than 0.005% of the total irradiation intensity and / or - is less than 0.002% of the total irradiation intensity and / or - is less than 0,001% of the total irradiation intensity.

3. Current sensor according to one of claims 1 to 2, wherein a first position of the isotropic first sensor element (SE1) relative to the conductor (LTG) differs from a second position of the isotropic second sensor element (SE2) relative to the conductor (LTG) such that at a current value of the electrical current (I, LTG ) in the conductor (LTG) the first amount of the first magnetic flux density (B1) is different from the second amount of the second magnetic flux density (B2) and therefore the first Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 97 / 109 Fluorescence intensity (I fl1 (|B1|)) of the isotropic first sensor element (SE1) from the second fluorescence intensity (I fl2(|B2|)) of the isotropic second sensor element (SE2).

4. Current sensor according to one of claims 1 to 3, wherein a shape of the conductor (LTG) is arranged such that at a current value of the electric current (I LTG ) in the conductor (LTG) the first amount of the first magnetic flux density (B1) is different from the second amount of the second magnetic flux density (B2) and therefore the first fluorescence intensity (I fl1 (|B1|)) of the first sensor element (SE1) from the second fluorescence intensity (I fl2(|B2|)) of the second sensor element (SE2).

5. Current sensor according to claim 4, wherein, as the shape of the electrical conductor (LTG), the electrical conductor (LTG) has at least one first meander loop (MS1) of the electrical conductor (LTG), and wherein, as the shape of the electrical conductor (LTG), the electrical conductor (LTG) has at least one second meander loop (MS2) of the electrical conductor (LTG), which is different from the first meander loop (MS1), and wherein the first meander loop (MS1) of the electrical conductor (LTG) has a first conductor section (LTGa1) of the electrical conductor (LTG) and a first second conductor section (LTGb1) of the electrical conductor (LTG), which is different from the first conductor section (LTGa1),and wherein the second meander loop (MS2) of the electrical conductor (LTG) has a second first conductor section (LTGa2) of the electrical conductor (LTG) and a second second conductor section (LTGb2) of the electrical conductor (LTG) which is different from the second first conductor section (LTGa2), and wherein the first first conductor section (LTGa1) of the electrical conductor (LTG) and the first second conductor section (LTGb1) of the electrical conductor (LTG) are electrically connected in series, and wherein the second first conductor section (LTGa2) of the electrical conductor (LTG) and the second second conductor section (LTGb2) of the electrical conductor (LTG) are electrically connected in series,and wherein the first conductor section (LTGa1) of the first meander loop (MS1) is guided at least in sections substantially parallel to the first second conductor section (LTGb1) of this first meander loop (MS1) at a first meander loop distance (b1) and, Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 98 / 109 wherein the second first conductor section (LTGa2) of the second meander loop (MS2) is guided at least in sections substantially parallel to the second second conductor section (LTGb2) of this second meander loop (MS2) at a second meander loop spacing (b2) and wherein the first meander loop spacing (b1) is different from the second meander loop spacing (b2) and wherein between the first first conductor section (LTGa1) of the first meander loop (MS1) and the first second conductor section (LTGb1) of this first meander loop (MS1) in or on a thus formed first slot (SL1) of this first meander loop (MS1) the first sensor element (SE1) with the first NV centers (NV1) and / or first paramagnetic centers (NV1) and wherein between the second first conductor section (LTGa2) of the second meander loop (MS2) and the second second conductor section(LTGb2) of this second meander loop (MS2), in or on a thus formed second slot (SL2) of this second meander loop (MS2), the second sensor element (SE2) with the second NV centers (NV2) and / or second paramagnetic centers (NV2) is placed.

6. Current sensor according to one of claims 1 to 5, wherein the current sensor comprises at least one magnetic circuit (MK) and wherein an electrical current flow of a line current (I LTG ) in the line (LTG) a magnetic excitation (H LTG) into the at least one magnetic circuit (MK), and wherein the shape and / or the composition thereof and / or the material parameters of the device parts of the magnetic circuit (MK) are configured such that the first magnitude of the first magnetic flux density B1 is different from the second magnitude of the second magnetic flux density B2.

7. Current sensor according to claim 6, wherein the at least one magnetic circuit (MK) has one or more respective air gaps (ag1, ag2), and wherein the first sensor element (SE1) and the second sensor element (SE2) are located in the one or more respective air gaps (ag1, ag2).

8. Current sensor according to one of claims 6 to 7, wherein the at least one magnetic circuit (MK) has a first air gap (ag1), and wherein the first sensor element (SE1) is located in the first air gap (ag1), and Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 99 / 109 wherein the at least one magnetic circuit (MK) has a second air gap (ag2) and wherein the second sensor element (SE2) is located in the second air gap (ag2) and wherein the first air gap (ag1) is different from the second air gap (ag2) and wherein the electrical current flow of the line current (I LTG ) in the conductor (LTG) causes the first magnetic flux density (B1) in the first air gap (ag1), which flows through the first sensor element (SE1) and wherein the electrical current flow of the line current (I LTG) in the conductor (LTG) causes the second magnetic flux density (B2) in the second air gap (ag2), which flux flows through the second sensor element (SE2).

9. Current sensor according to claim 8, wherein the first air gap (ag1) is a first sub-device of a first magnetic partial circuit, which itself is again a magnetic circuit and is itself a first magnetic partial circuit of the at least one magnetic circuit (MK), and wherein the second air gap (ag2) is a second sub-device of a second magnetic partial circuit, which itself is again a magnetic circuit and is itself a second magnetic partial circuit of the at least one magnetic circuit (MK), and wherein the first sensor element (SE1) is positioned relative to the conductor (LTG) in the first air gap (ag1) associated with this first sensor element (SE1) in such a way that a line current (I LTG) in the conductor (LTG) generates a magnetic field with a first flux density (B1) in the first air gap (ag1) that, with sufficient current intensity of the line current (I LTG ) influences the first optical fluorescence radiation (FL1) of the one or more first NV centers (NV1) and / or the one or more first paramagnetic centers (NV1) of the first sensor element (SE1) in a specific manner relative to this first sensor element (SE1), and wherein the second sensor element (SE2) is positioned relative to the conductor (LTG) in the second air gap (ag2) associated with this second sensor element (SE2) such that a conduction current (I LTG ) in the conductor (LTG) generates a magnetic field with a second flux density (B2) in the second air gap (ag2) that, with sufficient current intensity of the line current (I LTG) influences the second optical fluorescence radiation (FL2) of the one or more second NV centers (NV2) and / or the one or more second paramagnetic centers (NV2) of the second sensor element (SE2) in a specific manner with respect to this second sensor element (SE2), which is different from the respective specific ways of influencing the first sensor element (SE1). Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 100 / 109 10. Current sensor according to one of claims 1 to 9, wherein the current sensor comprises a computer system (RSYS) with a computer core (μC) and wherein the computer core (μC) is configured to implement a computer- and / or machine-implemented method for mapping one or more measured value vectors onto a measured value of the electrical current (I LTG) in the conductor (LTG), and wherein these measured value vectors serve as input values of the computer- and / or machine-implemented method, and wherein the one measured value vector or the plurality of measured value vectors - in a first possible case each at least one first intensity measured value (I fl1 (|B|)) of the first fluorescence intensities ) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B|)) of the second fluorescence intensities (I fl2 (|B|)) of the first sensor element (SE1) and / or - in a second possible case, at least one first intensity measurement value (I fl1 (|B|)) of the first fluorescence intensities (I fl1(|B|)) of the first sensor element (SE1) and in each case at least one first deceleration measurement value and / or - in a third possible case, in each case at least one first deceleration measurement value and in each case at least one second deceleration measurement value and / or - in a fourth possible case, in each case at least one first intensity measurement value (I fl1 (|B|)) of the first fluorescence intensities (I fl1 (|B|)) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B|)) of the second fluorescence intensities (I fl2 (|B|)) of the first sensor element (SE1) and at least one first delay measurement value in each case and / or - in a fifth possible case, at least one first intensity measurement value (Ifl1(|B|)) of the first fluorescence intensities (Ifl1(|B|)) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B|)) of the second fluorescence intensities (Ifl2 (|B|)) of the first sensor element (SE1) and each comprises at least one second deceleration measurement value and / or - in a sixth possible case Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 101 / 109 each at least a first intensity measurement value (I fl1 (|B|)) of the first fluorescence intensities (I fl1 (|B|)) of the first sensor element (SE1) and each comprises at least one first deceleration measurement value and each at least one second deceleration measurement value and / or - in a seventh possible case, each comprises at least one second intensity measurement value (I fl2 (|B|)) of the second fluorescence intensities (I fl2 (|B|)) of the first sensor element (SE1) and each comprises at least one first deceleration measurement value and each at least one second deceleration measurement value and / or - in an eighth possible case, each comprises at least one first intensity measurement value (I fl1(|B|)) of the first fluorescence intensities ) of the first sensor element (SE1) and at least one second intensity measurement value (I fl2 (|B|)) of the second fluorescence intensities (I fl2(|B|)) of the first sensor element (SE1) and each comprises at least one first delay measured value and each at least one second delay measured value, and / or wherein the one measured value vector or the plurality of measured value vectors particularly preferably each comprise exactly one first intensity measured value and each exactly one second intensity measured value and each exactly one first delay measured value and each exactly one second delay measured value.

11. Current sensor according to claim 10, wherein the computer system (RSYS) comprises one or more memories (MEM) with a program code stored therein at least temporarily, and wherein the computer core (μC) is configured to read and execute this program code when it executes said computer- and / or machine-implemented method for mapping one or more measured value vectors to a measured value of the electrical current (I LTG) in the conductor (LTG) and wherein the computer- and / or machine-implemented method for mapping one or more measured value vectors onto a measured value of the electrical current (ILTG) in the conductor (LTG) comprises a computer- and / or machine-implemented method of artificial intelligence, wherein one or more output values of the computer- and / or machine-implemented method for mapping one or more measured value vectors onto a measured value of the Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 102 / 109 electrical current (I LTG ) in the conductor (LTG) one or more measured values of the electric current (I LTG ) in the conductor (LTG).

12. Current sensor according to claim 11, wherein the computer- and / or machine-implemented method for mapping one or more measured value vectors to a measured value of the electrical current (I LTG) in the conductor (LTG) comprises a computer and / or machine-implemented neural network model, the input values of which are at least partially the one or more measured value vectors, and the one or more output values of which are at least partially one or more measured values of the electric current (I LTG ) in the conductor (LTG).

13. Current sensor according to one of claims 1 to 12, w obei eine Kurve einer Schwächung ( Ifl1 |) der ersten Fluoreszenzintensität (I fl1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) compared to a maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) comprises a first fluorescence intensity range (FIB11) in which each first fluorescence intensity value of the first fluorescence intensity (I fl1(|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) two first values of the magnitude of the first magnetic flux density (B1(I LTG )) and thus two first values of the electric current (I LTG ) in the line (LTG), and w obei die Kurve der Schwächung ( Ifl1(|B1(ILTG)|) der ersten Fluoreszenzintensität (Ifl1(|B1(ILTG)|) the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) compared to a maximum first fluorescence intensity (I flmax1 (|B1|)) of the first fluorescence radiation (FL1) of the isotropic first sensor element (SE1) comprises a first second fluorescence intensity range (FIB21), in which each first fluorescence intensity value of the first fluorescence intensity (I fl1 |)) of the first fluorescence radiation (FL1(I LTG)) of the isotropic first sensor element (SE1) exactly a first value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus exactly a first value of the electric current (I LTG ) in the line (LTG), and w obei eine Kurve einer Schwächung ( Ifl2(|B2(ILTG)|) der zweiten Fluoreszenzintensität (Ifl2(|B2|)) the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) compared to a maximum second fluorescence intensity (I flmax2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2) of the isotropic Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 103 / 109 second sensor element (SE2) comprises a second first fluorescence intensity range (FIB12), in which every second fluorescence intensity value of the second fluorescence intensity |)) of the second fluorescence radiation (FL2(I LTG)) of the isotropic second sensor element (SE2) two values of the magnitude of the second magnetic flux density (B2(I LTG )) and thus two second values of the electric current (I LTG ) in the manager (LTG), and wobei die Kurve der Schwächung ( Ifl2(|B2(ILTG)|) der zweiten Fluoreszenzintensität (Ifl2(|B2(ILTG)|) depending on the line current (I LTG ) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) compared to a maximum first fluorescence intensity (I flmax1 (|B(I LTG )|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) comprises a second second fluorescence intensity range (FIB22), in which each second fluorescence intensity value of the second fluorescence intensity (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2(I LTG )) of the second sensor element (SE2) exactly a second value of the magnitude of the second magnetic flux density (B2(I LTG)) and thus exactly a second value of the electric current (I LTG ) in the manager (LTG), and wobei die Kurve der Schwächung ( Ifl1(|B1(ILTG)|)) der ersten Fluoreszenzintensität (Ifl1(|B1(ILTG)|)) the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) a first region (BB11) of the first magnetic flux density (B1(I LTG )) in which the value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|))) (with K1 as the first calibration constant) continuously from 0A to a first turning point (ILTG1u) at a maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) in the first fluorescence intensity range increases, and wobei die Kurve der Schwächung ( Ifl2(|B2(ILTG) der zweiten Fluoreszenzintensität (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2(I LTG)) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) a second first region (BB12) of the second magnetic flux density (B2(I LTG )) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))) (with K2 as the second calibration constant) Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 104 / 109 continuously from 0A to a second reversal point (I LTG2u ) at a maximum second fluorescence intensity (I flmax2 (|B2(I LTG )|)) in the second first fluorescence intensity range (FIB12), and wobei die Kurve der Schwächung ( Ifl1(|B1(ILTG)|)) der ersten Fluoreszenzintensität (Ifl1(|B1(ILTG)|)) the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) a first second region (BB21) of the first magnetic flux density ) at which the value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|))) (with K1 as the first calibration constant) continuously from the first reversal point (I LTG1u ) at the maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) up to a first transition current value (I LTG1ü ) in the first fluorescence intensity range (FIB11), and wobei die Kurve der Schwächung ( Ifl2(|B2(ILTG)|)) der zweiten Fluoreszenzintensität (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) a second second region (BB22) of the second magnetic flux density (B2(I LTG )) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG ) as a functionILTG=K2*B2(ln(- (with K2 as the second calibration constant) continuously from the second reversal point (I LTG2u ) at the maximum second fluorescence intensity (I flmax2 (|B2(I LTG )|)) up to a second transition current value (I LTG2ü ) in the second first fluorescence intensity range (FIB12), and wobei die Kurve der Schwächung ( Ifl1(|B1(ILTG)|)) der ersten Fluoreszenzintensität (Ifl1(|B1(ILTG)|)) the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) has a first third region (BB31) of the first magnetic flux density (B1(ILTG)), in which the value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|))) (with K1 as the first calibration constant) Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 105 / 109 continuously from the value of the first transition current value (I LTG1ü) up to the maximum detectable first current value (I LTG1max ), corresponding to a maximum detectable first magnetic flux density (B 1max (I LTG )) in the first second fluorescence intensity range (FIB21), in particular substantially linearly, and w obei die Kurve der Schwächung ( Ifl2(|B2(ILTG)|)) der zweiten Fluoreszenzintensität (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) a second third region (BB32) of the second magnetic flux density (B2(I LTG )) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG ) as function I LTG=K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))) (with K2 as the second calibration constant) continuously depends on the value of the second transition current value (I LTG2ü ) up to the maximum detectable second current value (I LTG2max ), corresponding to a second maximum detectable magnetic flux density (B2max (I LTG )) in the second second fluorescence intensity range (FIB22), in particular substantially linearly, and characterized in that the current sensor is arranged such that the first first transition current value (I LTG1ü ) for the isotropic first sensor element (SE1) is located within the first second region (BB21) of the second sensor element (SE2) (formula BB11+BB12B21).

14. Current sensor according to one of claims 1 to 13, w obei die Kurve der Schwächung ( Ifl1(|B1(ILTG)|) der ersten Fluoreszenzintensität |)) the first fluorescence radiation (FL1(ILTG)) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) compared to a maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG)) of the isotropic first sensor element (SE1) comprises a first fluorescence intensity range (FIB11) in which each first fluorescence intensity value of the first fluorescence intensity (I fl1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) two first values of the magnitude of the first magnetic flux density (B1(I LTG )) and thus two first values of the electric current (I LTG ) in the line (LTG), and w obei die Kurve der Schwächung ( Ifl1(|B1(ILTG)|) der ersten Fluoreszenzintensität (Ifl1(|B1(ILTG)|) the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) compared to a maximum first fluorescence intensity (Iflmax1(|B1|)) of the first fluorescence radiation (FL1) of the isotropic first Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 106 / 109 sensor element (SE1) comprises a first second fluorescence intensity range (FIB21), in which each first fluorescence intensity value of the first fluorescence intensity (I fl1 (|B1(I LTG )|)) of the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) exactly a first value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus exactly a first value of the electric current (I LTG ) in the conductor (LTG), and wobei die Kurve der Schwächung ( Ifl2(|B2(ILTG)|) der zweiten Fluoreszenzintensität (Ifl2(|B2|)) der second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) compared to a maximum second fluorescence intensity (I flmax2 (|B2(I LTG)|)) of the second fluorescence radiation (FL2) of the isotropic second sensor element (SE2) comprises a second first fluorescence intensity range (FIB12), in which each second fluorescence intensity value of the second fluorescence intensity (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) two values of the magnitude of the second magnetic flux density (B2(I LTG )) and thus two second values of the electric current (I LTG ) are assigned to the leader (LTG), and wobei die Kurve der Schwächung ( Ifl2(|B2(ILTG)|) der zweiten Fluoreszenzintensität (Ifl2(|B2(ILTG)|) depending on the line current (I LTG ) of the second fluorescence radiation (FL2(I LTG )) of the isotropic second sensor element (SE2) compared to a maximum first fluorescence intensity (I flmax1 (|B(I LTG )|)) of the second fluorescence radiation (FL2(I LTG)) of the isotropic second sensor element (SE2) comprises a second second fluorescence intensity range (FIB22), in which each second fluorescence intensity value of the second fluorescence intensity (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2(I LTG )) of the second sensor element (SE2) exactly a second value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus exactly a second value of the electric current (I LTG ) in the conductor (LTG), and wobei die Kurve der Schwächung ( Ifl1(|B1(ILTG)|)) der ersten Fluoreszenzintensität (|B1(ILTG)|)) the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) a first region (BB11) of the first magnetic flux density (B1(I LTG )) in which the value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus the proportional line current (I LTG ) as a functionILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|))) (with K1 as the first calibration constant) continuously from 0A to a first reversal point (I LTG1u ) at a maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) in the first fluorescence intensity range (FIB11), and Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 107 / 109 wobei die Kurve der Schwächung ( Ifl2(|B2(ILTG)|)) der zweiten Fluoreszenzintensität (Ifl2(|B2(ILTG)|)) of the second fluorescence radiation (FL2(ILTG)) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) a second first region (BB12) of the second magnetic flux density (B2(I LTG )) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K2*B2(ln(- (with K2 as the second calibration constant) continuously from 0A to a second reversal point (I LTG2u) at a maximum second fluorescence intensity (I flmax2 (|B2(I LTG )|)) in the second first fluorescence intensity range (FIB12), and wobei die Kurve der Schwächung ( Ifl1(|B1(ILTG)|)) der ersten Fluoreszenzintensität (Ifl1(|B1(ILTG)|)) the first fluorescence radiation (FL1(I LTG )) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) a first second region (BB21) of the first magnetic flux density (B1(I LTG )) in which the value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|))) (with K1 as the first calibration constant) continuously from the first reversal point (I LTG1u ) at the maximum first fluorescence intensity (I flmax1 (|B1(I LTG )|)) up to a first transition current value (I LTG1ü ) in the first fluorescence intensity range (FIB11), and wobei die Kurve der Schwächung ( Ifl2(|B2(ILTG)|)) der zweiten Fluoreszenzintensität (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2(ILTG )) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) a second second region (BB22) of the second magnetic flux density (B2(I LTG )) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))) (with K2 as the second calibration constant) continuously from the second reversal point (I LTG2u ) at the maximum second fluorescence intensity (I flmax2 (|B2(I LTG )|)) up to a second transition current value (I LTG2ü ) in the second first fluorescence intensity range (FIB12), and Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 108 / 109 wobei die Kurve der Schwächung ( Ifl1(|B1(ILTG)|)) der ersten Fluoreszenzintensität (Ifl1(|B1(ILTG)|)) the first fluorescence radiation (FL1(ILTG)) of the isotropic first sensor element (SE1) as a function of the line current (I LTG ) a first third area the first magnetic flux density (B1(I LTG )) in which the value of the magnitude of the first magnetic flux density (B1(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K1*B1(ln(- Ifl1(|B1(ILTG)|)+ Iflmax1(|B1(ILTG)|))) (with K1 as the first calibration constant) continuously from the value of the first transition current value (I LTG1ü ) up to the maximum detectable first current value (I LTG1max ), corresponding to a maximum detectable first magnetic flux density (B 1max (I LTG )) in the first second fluorescence intensity range (FIB21), in particular substantially linearly, and wobei die Kurve der Schwächung ( Ifl2(|B2(ILTG)|)) der zweiten Fluoreszenzintensität (I fl2 (|B2(I LTG )|)) of the second fluorescence radiation (FL2) of the isotropic second sensor element (SE2) as a function of the line current (I LTG ) a second third region (BB32) of the second magnetic flux density (B2(I LTG)) in which the value of the magnitude of the second magnetic flux density (B2(I LTG )) and thus the proportional line current (I LTG ) as a function ILTG=K2*B2(ln(- Ifl2(|B2(ILTG)|)+ Iflmax2(|B2(ILTG)|))) (with K2 as the second calibration constant) continuously depends on the value of the second transition current value (I LTG2ü ) up to the maximum detectable second current value (I LTG2max ), corresponding to a second maximum detectable magnetic flux density (B 2max (I LTG )) in the second fluorescence intensity range (FIB22), in particular substantially linearly, and wherein the current sensor is designed to - measure the current intensity of the electric current (I LTG ) in the conductor (LTG) by means of the first fluorescence intensity (I fl 1(|B1(I LTG )|)) of the first sensor element (SE1) when the first fluorescence intensity (|B1(I LTG)|)) is located in the first fluorescence intensity range (FIB11) of the first isotropic sensor element (SE1), and, - if the first fluorescence intensity (I fl 1(|B1(I LTG )|)) is located in the first second fluorescence intensity range (FIB21) of the first isotropic sensor element (SE1), the current intensity of the electric current (I LTG ) in the conductor (LTG) by means of the second fluorescence intensity (Ifl2(|B2(ILTG)|)) of the isotropic second sensor element (SE2) to Elmos Semiconductor SE & Quantum Technologies GmbH Elmos AZ: 01619DEWO QT AZ: QUA66DEPCT 109 / 109 determine, whereby the sensor system is set up so that under this condition the second magnetic flux density (B2(I LTG)) is located in the second first region (BB12) of the isotropic second sensor element (SE2).

15. Electronic fuse with a current sensor according to one of claims 1 to 14, wherein the electronic fuse comprises a control device (CTR) with a computer system (RSYS) with a computer core (μC), and wherein the computer core (μC) is dependent on one or more determined values of the electrical current (I LTG ) in the conductor (LTG), and / or of one or more determined or estimated values of the electrical power (P LTG ), and / or of one or more values of one or more intensities (I fl1 (|B1(I LTG )|), I fl2 (|B2(I LTG )|)) one of the several fluorescent radiations (FL1, FL2) of one or more sensor elements of the sensor elements (SE1, SE2), and / or v on einem oder mehreren Werten einer oder mehrerer Phasenverzögerungen ( fl1(|B1(ILTG)|), ( fl2(|B2(ILTG)|),) des jeweiligen zeitlichen Verlaufs einer oder mehrerer Intensitäten (Ifl1(|B1(ILTG)|), I fl2 (|B2(I LTG)|)) one of the several fluorescence radiations (FL1, FL2) of one or more sensor elements of the sensor elements (SE1, SE2) against the respective temporal course of the intensity (I pmp (t)) of the pump radiation (LB), and / or one or more values derived therefrom, in particular by logarithmization, squaring, and / or temporal integration, and / or multiplication by constants, and / or other filtering, closes and / or opens a switch (T2) inserted into the line (LTG).

16. Electronic fuse according to claim 15, wherein the electronic fuse is configured to actuate the switch (T2) by means of optical control radiation (SB) as an optical switching signal.

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