Photosensitive resin composition for optical waveguide, photosensitive resin film, optical waveguide, and photoelectric composite substrate

Abstract

The purpose of the present disclosure is to provide: a photosensitive resin composition for an optical waveguide, the photosensitive resin composition being used for the formation of an optical waveguide and being capable of reducing the transmission loss at 1,310 nm; and a photosensitive resin film, an optical waveguide, and a photoelectric composite substrate, each of which uses this photosensitive resin composition.　A photosensitive resin composition for an optical waveguide (34) according to the present disclosure has an integral value of the absorbance at a wave number of 9,090 cm to 1 to 10,526 cm to 1 of 3.00 or less at a thickness of 1 mm.

Description

Photosensitive resin composition for optical waveguide, photosensitive resin film, optical waveguide, and optoelectronic composite substrate

[0001] The present disclosure relates to a photosensitive resin composition for an optical waveguide, a photosensitive resin film, an optical waveguide, and an optoelectronic composite substrate.

[0002] Forming an optical waveguide by curing a composition containing a resin component has been investigated. Because the fabrication process can be simplified, the cost can be low, and high functionality can be achieved, fabrication of a polymer optical waveguide structure in which an optical waveguide is provided inside a resin layer including a lower clad layer, a core layer, and an upper clad layer has been investigated. For example, it has been proposed to form an optical waveguide by curing a photosensitive resin composition for an optical waveguide containing a resin component and a photopolymerization initiator (see, for example, Patent Document 1).

[0003] Patent No. 6344792

[0004] In Patent Document 1, the resin component contains a C—H bond vibration absorption in the IR spectrum of 3000 to 2800 cm －１ in the range of 2960 cm －１ The purpose of this is to avoid vibration absorption due to the resin skeleton in the 850 nm light propagating through the optical waveguide and to achieve low loss by using a resin component that has low absorbance against 850 nm light.

[0005] However, Patent Document 1 does not consider an optical waveguide capable of reducing transmission loss at 1310 nm.

[0006] An object of the present disclosure is to provide a photosensitive resin composition for optical waveguides used to form optical waveguides that can reduce transmission loss at 1310 nm, as well as a photosensitive resin film, an optical waveguide, and an optoelectronic composite substrate that use the same.

[0007] <1> Wave number 9090 cm at a thickness of 1 mm －１ ~10526cm －１<2> The photosensitive resin composition for optical waveguides according to <1>, which contains a compound (A) containing an acidic group in one molecule. <3> The photosensitive resin composition for optical waveguides according to <1> or <2>, which contains a compound (B) containing an ethylenically unsaturated group. <4> The photosensitive resin composition for optical waveguides according to any one of <1> to <3>, which contains a compound (C) containing an epoxy group. <5> The photosensitive resin composition for optical waveguides according to any one of <1> to <4>, which contains a polymerization initiator (D). <6> The photosensitive resin composition for optical waveguides according to any one of <1> to <5>, which contains a maleimide compound (E). <7> A photosensitive resin film comprising a photosensitive resin layer formed using the photosensitive resin composition for optical waveguides according to any one of <1> to <6>. <8> A photosensitive resin film comprising: a base film layer; and a photosensitive resin layer located on the base film layer and formed using the photosensitive resin composition for optical waveguides according to any one of <1> to <6>. <9> A photosensitive resin film comprising: a base film layer; a photosensitive resin layer formed using the photosensitive resin composition for optical waveguides according to any one of <1> to <6>; and a protective film layer, in this order. <10> An optical waveguide, in which at least one selected from the group consisting of a lower clad layer, a core layer, and an upper clad layer is formed using the photosensitive resin composition for optical waveguides according to any one of <1> to <6>. <11> An optical waveguide, in which at least one selected from the group consisting of a lower clad layer, a core layer, and an upper clad layer is formed using the photosensitive resin film according to <7>. <12> An optical / electrical composite substrate comprising the optical waveguide according to <10>. <13> An optical / electrical composite substrate comprising the optical waveguide according to <11>.

[0008] According to the present disclosure, it is possible to provide a photosensitive resin composition for optical waveguides used to form optical waveguides that can reduce transmission loss at 1310 nm, as well as a photosensitive resin film, an optical waveguide, and an optoelectronic composite substrate that use the same.

[0009] FIG. 1A is a schematic cross-sectional view showing one embodiment of a semiconductor package according to the present disclosure. FIG. 1B is a schematic cross-sectional view showing one embodiment of a semiconductor package according to the present disclosure. FIG. 2 is a schematic plan view of the semiconductor package shown in FIG. 1A. FIG. 3 is a schematic plan view of a modified example of the semiconductor package shown in FIG. 1A. FIG. 4 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. FIG. 5 is a schematic plan view of the semiconductor package shown in FIG. 4. FIG. 6 is a schematic plan view of a modified example of the semiconductor package shown in FIG. 4. FIG. 7 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. FIG. 8 is a schematic plan view of the semiconductor package shown in FIG. 7. FIG. 9 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. FIG. 10 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. FIG. 11 is a schematic plan view of the semiconductor package shown in FIG. 10. FIG. 12 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. FIG. 13 is a schematic cross-sectional view showing another embodiment of a semiconductor package according to the present disclosure. 14 is a perspective view showing an optical input portion of an optical circuit chip used in the semiconductor package shown in FIG. 1 . FIG. 15 is a perspective view showing a modified example of the optical input portion of an optical circuit chip used in the semiconductor package shown in FIG. 1 . FIG. 16A is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16B is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16C is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16D is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16E is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16F is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16G is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16H is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 16I is a cross-sectional view schematically illustrating an embodiment of a method for manufacturing an optoelectronic composite wiring board. FIG. 17 is a front view illustrating materials used in the method for manufacturing an optoelectronic composite wiring board.Fig. 18 is a cross-sectional view illustrating a laminate film used in a method for manufacturing an optoelectronic composite wiring board. Fig. 19 is a cross-sectional view illustrating a laminate film used in a method for manufacturing an optoelectronic composite wiring board. Fig. 20 is a cross-sectional view illustrating a laminate film used in a method for manufacturing an optoelectronic composite wiring board.

[0010] Hereinafter, embodiments for carrying out the present disclosure will be described in detail. However, the present disclosure is not limited to the following embodiments. In the following embodiments, components (including element steps, etc.) are not essential unless otherwise specified. The same applies to numerical values ​​and their ranges, and do not limit the present disclosure.

[0011] In the present disclosure, the term "process" includes not only a process that is independent of other processes, but also a process that cannot be clearly distinguished from other processes as long as the purpose of the process is achieved.

[0012] In the present disclosure, numerical ranges indicated using "to" include the numerical values ​​before and after "to" as the minimum and maximum values, respectively.

[0013] In the numerical ranges described in stages in this disclosure, the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages. Furthermore, in the numerical ranges described in this disclosure, the upper or lower limit value of that numerical range may be replaced with a value shown in the examples.

[0014] In the present disclosure, each component may contain multiple substances corresponding to the component. When multiple substances corresponding to each component are present in the composition, the content or amount of each component means the total content or amount of the multiple substances present in the composition, unless otherwise specified.

[0015] In the present disclosure, the term "layer" includes cases where the layer is formed over the entire area when the area in which the layer exists is observed, as well as cases where the layer is formed over only a portion of the area.

[0016] When describing embodiments with reference to the drawings in this disclosure, the configuration of the embodiment is not limited to the configuration shown in the drawings. Furthermore, the size of the components in each drawing is conceptual, and the relative size relationships between the components are not limited to these.

[0017] <Photosensitive Resin Composition for Optical Waveguide> The photosensitive resin composition for optical waveguide according to the present disclosure (hereinafter also simply referred to as "photosensitive resin composition") has a wavelength of 9090 cm at a thickness of 1 mm. －１ ~10526cm －１ The present inventors have found that the integrated value of absorbance at a wave number of 9090 cm is 3.00 or less. －１ ~10526cm －１ It was found that the integrated value of absorbance at 1310 nm correlates with the ideal transmission loss of a resin layer formed from a photosensitive resin composition at a wavenumber of 9090 cm at a thickness of 1 mm. －１ ~10526cm －１ When the integrated value of absorbance at 9090 cm is 3.00 or less, the transmission loss at 1310 nm in the optical waveguide can be reduced. The reason for this is presumed to be as follows, but the present disclosure is not limited to this presumption. In the near-infrared region from 800 nm onwards, such as 950 nm to 1100 nm, bonds containing hydrogen atoms such as C-H, N-H, and O-H absorb light. －１ ~10526cm －１ The decrease in the integrated value of absorbance at 1310 nm tends to decrease the concentration of such X-H (X is C, N, O, etc.) bonds. As a result, the optical absorption at 1310 nm is reduced, and the transmission loss at 1310 nm in the optical waveguide can be reduced.

[0018] In the photosensitive resin composition of the present disclosure, the integrated value of the absorbance may be 2.80 or less, or may be 2.50 or less. The lower limit of the integrated value of the absorbance is not particularly limited, and may be 1.00 or more, or may be 1.50 or more. The integrated value of the absorbance is determined by measuring the near-infrared absorption spectrum using a 1 mm thick sample prepared using the photosensitive resin composition of the present disclosure. When the near-infrared absorption spectrum is measured using a sample with a thickness other than 1 mm, the measured integrated value of the absorbance can be converted to that for a thickness of 1 mm.

[0019] The photosensitive resin composition of the present disclosure is a composition used to form an optical waveguide, and may be, for example, a composition used to form an insulating layer having an optical waveguide therein, or a composition used to form at least one of a lower clad layer, a core layer, and an upper clad layer.

[0020] The components contained in the photosensitive resin composition of the present disclosure are not particularly limited as long as the integrated value of the absorbance described above is 3.00 or less. Components that may be contained in the photosensitive resin composition of the present disclosure will be described below. Note that the photosensitive resin composition of the present disclosure is not limited to compositions containing the following components, and the following components are optional components of the photosensitive resin composition.

[0021] (Compound (A) Having an Acidic Group in One Molecule) The photosensitive resin composition of the present disclosure may contain a compound (A) having an acidic group in one molecule (hereinafter also simply referred to as "compound (A)").

[0022] The compound (A) is not particularly limited as long as it is a compound containing an acidic group in one molecule. Examples of the acidic group include a carboxy group, a sulfonic acid group, and a phenolic hydroxyl group. The number of acidic groups contained in the compound (A) is not particularly limited, and may be one per molecule or two or more per molecule. The compound (A) may be used alone or in combination of two or more.

[0023] The acid value of the compound (A) is preferably 30 mgKOH / g to 150 mgKOH / g, more preferably 40 mgKOH / g to 120 mgKOH / g, and even more preferably 50 mgKOH / g to 100 mgKOH / g. When the acid value of the compound (A) is 30 mgKOH / g or more, the solubility of the photosensitive resin composition in a dilute alkaline solution tends to be improved. When the acid value of the compound (A) is 150 mgKOH / g or less, the solubility at a wave number of 9090 cm －１ ~10526cm －１ Since the integral value of absorbance at 1310 nm tends to decrease, the propagation loss at 1310 nm tends to decrease further.

[0024] Compound (A) may be a phenolic compound such as a novolac phenolic resin or a cresol novolac phenolic resin, or a (meth)acrylate compound containing an acidic group. In the present disclosure, a compound containing an acidic group and an ethylenically unsaturated group is classified as compound (A). In the present disclosure, a compound containing an acidic group and an epoxy group is classified as compound (C) containing an epoxy group, which will be described later.

[0025] When the photosensitive resin composition contains the compound (A), the content of the compound (A) may be 30% by mass to 85% by mass, 40% by mass to 80% by mass, or 50% by mass to 75% by mass, relative to the total amount of the photosensitive resin composition.

[0026] When compound (A) includes an epoxy compound having an acidic group, the content of the (meth)acrylate compound having an acidic group may be 50% by mass to 100% by mass, 70% by mass to 100% by mass, or 90% by mass to 100% by mass, relative to the total amount of compound (A).

[0027] When compound (A) includes an epoxy compound having an acidic group, the content of the epoxy compound having an acidic group may be 40% by mass to 85% by mass, 45% by mass to 80% by mass, or 50% by mass to 75% by mass, relative to the total amount of the photosensitive resin composition.

[0028] (Compound (B) Having an Ethylenically Unsaturated Group) The photosensitive resin composition of the present disclosure may contain a compound (B) having an ethylenically unsaturated group (hereinafter also simply referred to as "compound (B)").

[0029] The compound (B) is not particularly limited as long as it contains one or more ethylenically unsaturated groups in one molecule. Examples of the ethylenically unsaturated group include a (meth)acryloyl group, a (meth)acrylamide group, a styryl group, a (meth)allyl group, and a vinyl group. The number of ethylenically unsaturated groups contained in the compound (B) is not particularly limited, and may be one per molecule, two or more per molecule, or two or more to six or less per molecule. The compound (B) may be used alone or in combination of two or more.

[0030] Examples of the compound (B) include (meth)acrylate compounds, (meth)acrylamide compounds, (meth)allyl compounds, and vinyl compounds. Polyfunctional (meth)acrylate compounds, polyfunctional (meth)acrylamide compounds, polyfunctional (meth)allyl compounds, and polyfunctional vinyl compounds are preferred, and polyfunctional (meth)acrylate compounds are more preferred.

[0031] Examples of polyfunctional (meth)acrylate compounds include diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, trimethylolpropane di(meth)acrylate, trimethylolpropane tri(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, polyethylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, tricyclodecane dimethylol di(meth)acrylate, ditrimethylolpropane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetra(meth)acrylate. (meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tris(2-(meth)acryloyloxyethyl) isocyanurate, tri(meth)acrylate of tris(β-hydroxyethyl)isocyanurate, polycarbonate diol di(meth)acrylate, urethane (meth)acrylate, and the like.

[0032] Examples of polyfunctional (meth)acrylamide compounds include N,N'-methylenebis(meth)acrylamide, N,N'-ethylenebis(meth)acrylamide, N,N'-(1,2-dihydroxyethylene)bis(meth)acrylamide, and N-[tris(3-acrylamidopropoxymethyl)methyl](meth)acrylamide.

[0033] Examples of polyfunctional (meth)allyl compounds include di(meth)allyl benzenedicarboxylate, di(meth)allyl cyclohexanedicarboxylate, di(meth)allyl maleate, di(meth)allyl adipate, di(meth)allyl phthalate, di(meth)allyl isophthalate, di(meth)allyl terephthalate, glycerin di(meth)allyl ether, trimethylolpropane di(meth)allyl ether, pentaerythritol di(meth)allyl ether, Examples include pentaerythritol tri(meth)allyl ether, tri(meth)allyl cyanurate, tri(meth)allyl isocyanurate, tri(meth)allyl trimellitate, tetra(meth)allyl pyromellitate, 1,3,4,6-tetra(meth)allyl glycoluril, 1,3,4,6-tetra(meth)allyl-3a-methylglycoluril, and 1,3,4,6-tetra(meth)allyl-3a,6a-dimethylglycoluril.

[0034] Examples of the polyfunctional vinyl compound include divinylbenzene, divinylnaphthalene, divinylbiphenyl, divinylcyclohexane, cyclohexanedimethanol divinyl ether, and polybutadiene.

[0035] When the photosensitive resin composition contains the compound (B), the content of the compound (B) may be 5% by mass to 60% by mass, 10% by mass to 55% by mass, 12% by mass to 50% by mass, 15% by mass to 45% by mass, or 18% by mass to 40% by mass, relative to the total amount of the photosensitive resin composition.

[0036] When compound (B) contains a polyfunctional (meth)acrylate compound, the content of the polyfunctional (meth)acrylate compound may be 30% by mass to 100% by mass, 50% by mass to 100% by mass, 70% by mass to 100% by mass, or 90% by mass to 100% by mass, relative to the total amount of compound (B).

[0037] When the photosensitive resin composition contains a (meth)acrylate compound containing an acidic group as compound (A), the photosensitive resin composition preferably contains compound (B), and preferably contains a polyfunctional (meth)acrylate compound as compound (B). When the photosensitive resin composition contains a phenol compound as compound (A), the photosensitive resin composition may or may not contain compound (B).

[0038] (Epoxy Group-Containing Compound (C)) The photosensitive resin composition of the present disclosure may contain an epoxy group-containing compound (C) (hereinafter also simply referred to as "compound (C)").

[0039] The compound (C) is not particularly limited as long as it contains one or more epoxy groups in one molecule. The number of epoxy groups contained in the compound (C) is not particularly limited, and may be one or two or more in one molecule. The compound (C) may be used alone or in combination of two or more.

[0040] The compound (C) is a novolac type epoxy resin obtained by epoxidizing a novolac resin obtained by condensing or co-condensing at least one phenolic compound selected from the group consisting of phenolic compounds such as phenol, cresol, xylenol, resorcinol, catechol, bisphenol A, bisphenol F, and naphthol compounds such as α-naphthol, β-naphthol, and dihydroxynaphthalene with an aliphatic aldehyde compound such as formaldehyde, acetaldehyde, and propionaldehyde under an acidic catalyst. (phenol novolac type epoxy resins, o-cresol novolac type epoxy resins, etc.); triphenylmethane type epoxy resins obtained by epoxidizing triphenylmethane type phenolic resins obtained by condensing or co-condensing the above phenolic compounds with aromatic aldehyde compounds such as benzaldehyde and salicylaldehyde under an acidic catalyst; copolymer type epoxy resins obtained by epoxidizing novolac resins obtained by co-condensing the above phenolic compounds and naphthol compounds with aldehyde compounds under an acidic catalyst; diphenylmethane-type epoxy resins which are diglycidyl ethers of bisphenol A, bisphenol F, etc.; hydrogenated epoxy resins obtained by hydrogenating diglycidyl ethers of bisphenol A, bisphenol F, etc.; biphenyl-type epoxy resins which are diglycidyl ethers of alkyl-substituted or unsubstituted biphenols; stilbene-type epoxy resins which are diglycidyl ethers of stilbene-based phenolic compounds; sulfur-containing epoxy resins which are diglycidyl ethers of bisphenol S, etc.; epoxy resins which are glycidyl ethers of alcohols such as butanediol, polyethylene glycol, and polypropylene glycol; glycidyl ester-type epoxy resins which are glycidyl esters of polycarboxylic acids such as phthalic acid, isophthalic acid, and tetrahydrophthalic acid; glycidylamine-type epoxy resins in which active hydrogen atoms bonded to nitrogen atoms of aniline, diaminodiphenylmethane, isocyanuric acid, etc. are substituted with glycidyl groups; and dicyclopentadiene-type epoxy resins obtained by epoxidizing a co-condensation resin of dicyclopentadiene and a phenolic compound.Alicyclic epoxy resins such as vinylcyclohexene diepoxide, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, and 2-(3,4-epoxy)cyclohexyl-5,5-spiro(3,4-epoxy)cyclohexane-m-dioxane, which are produced by epoxidizing an intramolecular olefin bond; paraxylylene-modified epoxy resins, which are glycidyl ethers of paraxylylene-modified phenolic resins; metaxylylene-modified epoxy resins, which are glycidyl ethers of metaxylylene-modified phenolic resins; terpene-modified epoxy resins, which are glycidyl ethers of terpene-modified phenolic resins; and dicyclopentadiene-modified phenolic resins, which are glycidyl ethers of dicyclopentadiene-modified phenolic resins. Examples of such epoxy resins include pentadiene-modified epoxy resins, which are glycidyl ethers of cyclopentadiene-modified phenolic resins, polycyclic aromatic ring-modified epoxy resins, which are glycidyl ethers of polycyclic aromatic ring-modified phenolic resins, naphthalene-type epoxy resins, which are glycidyl ethers of naphthalene ring-containing phenolic resins, halogenated phenol novolac-type epoxy resins, hydroquinone-type epoxy resins, trimethylolpropane-type epoxy resins, linear aliphatic epoxy resins obtained by oxidizing olefin bonds with peracids such as peracetic acid, and aralkyl-type epoxy resins obtained by epoxidizing aralkyl-type phenolic resins such as phenol aralkyl resins and naphthol aralkyl resins.

[0041] Compound (C) may be an aralkyl epoxy resin or an alicyclic epoxy resin, or may be a phenol aralkyl epoxy resin or 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate. When the photosensitive resin composition contains compound (B), it may contain an aralkyl epoxy resin as compound (C), or it may not contain compound (C). When the photosensitive resin composition does not contain compound (B), it may contain an alicyclic epoxy resin as compound (C).

[0042] When the photosensitive resin composition contains the compound (C), the content of the compound (C) may be 3% by mass to 50% by mass, 5% by mass to 45% by mass, or 8% by mass to 40% by mass, relative to the total amount of the photosensitive resin composition.

[0043] When the photosensitive resin composition contains an aralkyl epoxy resin as compound (C), the content of compound (C) may be 3% by mass to 30% by mass, 5% by mass to 20% by mass, or 8% by mass to 15% by mass, relative to the total amount of the photosensitive resin composition.

[0044] When the photosensitive resin composition contains an alicyclic epoxy resin as compound (C), the content of compound (C) may be 20% by mass to 50% by mass, 30% by mass to 45% by mass, or 35% by mass to 40% by mass, relative to the total amount of the photosensitive resin composition.

[0045] (Polymerization initiator (D)) The photosensitive resin composition of the present disclosure may contain a polymerization initiator (D). The type of polymerization initiator is not particularly limited, and examples thereof include a radical initiator that generates radicals by heat, light, etc., an acid generator that generates an acid by heat, light, etc., and a base generator that generates a base by heat, light, etc. The radical initiator, acid generator, and base generator are not particularly limited, and conventionally known components can be used. One type of polymerization initiator (D) may be used alone, or two or more types may be used in combination.

[0046] For example, when the compound (B) is used, preferably when a (meth)acrylate compound is further used as the compound (A), the photosensitive resin composition preferably contains a radical initiator as the polymerization initiator (D). For example, when a phenolic compound is used as the compound (A), preferably when a phenolic compound is used as the compound (A) and no compound (B) is used, the photosensitive resin composition preferably contains an acid generator or a base generator as the polymerization initiator (D).

[0047] When the photosensitive resin composition contains the polymerization initiator (D), the content of the polymerization initiator (D) may be 0.1% by mass to 5% by mass, 0.3% by mass to 3% by mass, or 0.5% by mass to 2% by mass, relative to the total amount of the photosensitive resin composition.

[0048] (Maleimide Compound (E)) The photosensitive resin composition of the present disclosure may contain a maleimide compound (E) (hereinafter also simply referred to as "compound (E)"). By containing the maleimide compound (E), the above-mentioned integrated value of absorbance tends to be further reduced. The maleimide compound (E) may be used alone or in combination of two or more.

[0049] Compound (E) preferably includes a bismaleimide compound, more preferably an aromatic bismaleimide compound, For example, compound (E) is preferably a maleimide compound represented by the following general formula (E-1):

[0050]

[0051] In general formula (E-1), X Ａ１ is a divalent organic group. Ａ１ may contain a phenylene group having a substituent.

[0052] X Ａ１ may be a divalent organic group represented by the following general formula (E-2).

[0053]

[0054] In general formula (E-2), R Ａ２ and R Ａ３ are each independently an aliphatic hydrocarbon group having 1 to 5 carbon atoms or a halogen atom. Ａ２ is a divalent organic group. Ａ２ and n Ａ３ are each independently an integer of 0 to 4. * represents a binding site. X Ａ２ Examples of the divalent organic group in the formula (I) include an alkylene group having 1 to 5 carbon atoms and a bisphenol skeleton such as bisphenol A (for example, a divalent linking group formed by removing a hydrogen atom from each of two hydroxy groups).

[0055] When the photosensitive resin composition contains the compound (E), the content of the compound (E) may be 3% by mass to 30% by mass, 5% by mass to 20% by mass, or 8% by mass to 15% by mass, relative to the total amount of the photosensitive resin composition.

[0056] (Modification) A modification of the photosensitive resin composition for optical waveguides of the present disclosure may contain at least one compound selected from the group consisting of the compound (A), the compound (B), the compound (C), the polymerization initiator (D), and the compound (E). The photosensitive resin composition for optical waveguides has a wavelength of 9090 cm at a thickness of 1 mm. －１ ~10526cm －１ The integral value of absorbance at 1000 kJ / cm 2 may or may not satisfy the condition of 3.0 or less. The preferred configurations of compound (A), compound (B), compound (C), polymerization initiator (D), and compound (E) in this modified example are the same as those in the photosensitive resin composition for optical waveguides of the present disclosure described above.

[0057] The photosensitive resin composition for optical waveguides and its modified examples according to the present disclosure may or may not contain components other than the above-described compound (A), compound (B), compound (C), polymerization initiator (D), and compound (E) (hereinafter also referred to as "other components"). In the photosensitive resin composition for optical waveguides and its modified examples according to the present disclosure, the content of the other components may be 10% by mass or less, 5% by mass or less, or 1% by mass or less. The lower limit of the content of the other components is not particularly limited, and may be 0% by mass or more, or 0.1% by mass or more.

[0058] For example, a modified example of the photosensitive resin film of the present disclosure may be any one of the following photosensitive resin films 1 to 3.

[0059] Photosensitive resin film 1 contains compound (A), compound (B), and polymerization initiator (D). Photosensitive resin film 2 contains compound (A), compound (C), and polymerization initiator (D). Photosensitive resin film 3 contains compound (A), compound (B), compound (C), and polymerization initiator (D). Photosensitive resin films 1 to 3 may each independently contain compound (E).

[0060] In the photosensitive resin film 1, it is preferable that the compound (A) contains a (meth)acrylate compound containing an acidic group, it is preferable that the compound (B) contains a (meth)acrylate compound, and it is preferable that the polymerization initiator (D) contains a radical initiator.

[0061] The photosensitive resin film 2 preferably contains a phenol compound as the compound (A), preferably contains an alicyclic epoxy resin as the compound (C), and preferably contains an acid generator or a base generator as the polymerization initiator (D).

[0062] The photosensitive resin film 3 preferably contains a (meth)acrylate compound containing an acidic group as the compound (A), a (meth)acrylate compound as the compound (B), an aralkyl epoxy resin as the compound (C), and an acid generator or a base generator as the polymerization initiator (D).

[0063] <Photosensitive Resin Film> The photosensitive resin film of the present disclosure includes a photosensitive resin layer formed using the photosensitive resin composition for optical waveguides of the present disclosure. The photosensitive resin film is a molded product obtained by molding the photosensitive resin composition for optical waveguides of the present disclosure into a film shape. For example, the photosensitive resin film is used to form an insulating layer having an optical waveguide therein, and is used to form at least one of a lower clad layer, a core layer, and an upper clad layer.

[0064] The photosensitive resin film of the present disclosure may have a photosensitive resin layer formed using the photosensitive resin composition for optical waveguides of the present disclosure formed on a base film layer, or may have a base film layer and a protective film layer formed on both sides of the photosensitive resin layer formed using the photosensitive resin composition for optical waveguides of the present disclosure.

[0065] In the optical waveguide of the present disclosure, at least one layer selected from the group consisting of a lower clad layer, a core layer, and an upper clad layer is formed using the photosensitive resin composition for optical waveguides of the present disclosure or the photosensitive resin film of the present disclosure, thereby making it possible to reduce the transmission loss at 1310 nm in the optical waveguide.

[0066] <Optoelectronic Composite Substrate> The optoelectronic composite substrate of the present disclosure includes the optical waveguide of the present disclosure. Hereinafter, an optoelectronic composite wiring board 30 will be described as an example of the optoelectronic composite substrate, and a semiconductor package 20 including the optoelectronic composite wiring board 30 will be described.

[0067] 1A is a cross-sectional schematic diagram showing one embodiment of a semiconductor package produced using the photosensitive resin composition of the present disclosure. The semiconductor package 20 of the present disclosure includes an optoelectronic composite wiring board 30, an optical circuit chip 50, and an electronic circuit chip 60. The photosensitive resin composition of the present disclosure is a composition used to form the insulating layer 34 included in the optoelectronic composite wiring board 30, and is a composition used to form, for example, at least one of a lower clad layer, a core layer, and an upper clad layer.

[0068] 1A and 1B, the optoelectronic composite wiring board 30 includes a resin layer, optical wiring, and electrical wiring. Specifically, the optoelectronic composite wiring board 30 includes a substrate 32, an insulating layer 34, an optical waveguide 36 as the optical wiring, a wiring layer 38 as the electrical wiring, and via conductors 78 (see FIG. 1B).

[0069] The substrate 32 has a wiring layer 33 (see FIG. 1B ) as electrical wiring. In the present embodiment, as an example, the wiring layer 33 is provided on the surface of the substrate 32. The substrate 32 may be an inorganic substrate such as glass or ceramic, an organic substrate such as a copper-clad laminate, or a composite substrate obtained by laminating a prepreg, a build-up film, or a rewiring resin material onto any of these.

[0070] The insulating layer 34 is made of a resin material and is disposed on the substrate 32. Specifically, as shown in FIG. 1B , the insulating layer 34 is disposed on the substrate 32 and the wiring layer 33. In this embodiment, the insulating layer 34 is configured, for example, with three layers. The insulating layer 34 is mainly configured with a first layer 70 disposed on the substrate 32, a second layer 72 disposed on the first layer 70, and a third layer 74 disposed on the second layer 72. Note that the number of layers constituting the insulating layer 34 is not limited to the above.

[0071] The optical waveguide 36 is a path for guiding an optical signal, and is provided inside the insulating layer 34, as shown in FIGS. 1A and 1B. In this embodiment, the optical waveguide 36 is, for example, formed by a part of the second layer 72. An optical guide section 42 is provided at the end of the optical waveguide 36. The optical guide section 42 has a guide body 42A and a reflecting mirror 42B. Light emitted from the end of the optical waveguide 36 is reflected by the reflecting mirror 42B and travels through the guide body 42A to the optical circuit chip 50. The optical guide section 42 is provided in the insulating layer 34.

[0072] The wiring layer 38 is provided inside the insulating layer 34 or on the surface of the insulating layer 34. The wiring layer 38 of this embodiment is provided on the surface of the insulating layer 34, as shown in FIG. 1B . When there are multiple wiring layers 38, the wiring layers 38 may be provided inside the insulating layer 34 and on the surface of the insulating layer 34, respectively. Each wiring layer may contain one or more types of metal. Examples of metals that constitute each wiring layer include copper, silver, gold, and aluminum. The metals that constitute each wiring layer are not limited to the above metals.

[0073] The via conductor 40 electrically connects the wiring layer 33 and the wiring layer 38. When there are multiple wiring layers 38, adjacent wiring layers 38 in the stacking direction may be electrically connected by another via conductor. The metal constituting the via conductor may be the same as the metal constituting the wiring layer 38.

[0074] (Optical Circuit Chip 50) The optical circuit chip 50 is disposed on the optoelectronic composite wiring board 30. The optical circuit chip 50 is connected to the optical waveguide 36. Specifically, the optical circuit chip 50 is connected to the optical waveguide 36 via the optical guide 42. The optical circuit chip 50 has a light introduction port 52 (see FIG. 14 ) on the insulating layer 34 side, and the light guide 42 is connected to the light introduction port 52. A plurality of light introduction ports 52 are provided at intervals on the optical circuit chip 50. The light introduction port 52 may have any shape as long as it can introduce light, and may be a circular opening as shown in FIG. 14 or a tapered opening as shown in FIG. 15 .

[0075] The optical circuit chip 50 is connected to a wiring layer for the optical circuit chip 50 in the insulating layer 34 via chip electrodes 54 .

[0076] (Electronic Circuit Chip 60) The electronic circuit chip 60 is disposed on the wiring layer 38. Note that the wiring layer 38 is not shown in Fig. 1A. The electronic circuit chip 60 is connected to the wiring layer 38 via chip electrodes 62.

[0077] 2 is a schematic plan view of the semiconductor package shown in FIG. 1A. In the example of FIG. 2, an electronic circuit chip 60 is disposed in the center of an optoelectronic composite wiring board 30, and a plurality of optical circuit chips 50 are disposed surrounding the electronic circuit chip 60. A plurality of optical waveguides 36 extending from optical connectors 44 provided on the periphery of the optoelectronic composite wiring board 30 are connected to these optical circuit chips 50. Note that, in the example of FIG. 2, an optical connector 44 is provided on each of the four sides of the optoelectronic composite wiring board 30, but the present disclosure is not limited to this configuration. For example, as shown in the example of FIG. 6, a pair of optical connectors 44 may be provided on each of two opposite sides of the optoelectronic composite wiring board 30.

[0078] In the semiconductor package 20, the optical circuit chip 50 and the electronic circuit chip 60 are arranged on the optoelectronic composite wiring board 30 without using a silicon interposer as a relay material. Therefore, the cost of the semiconductor package 20 is reduced compared to a configuration that uses a silicon interposer.

[0079] In the semiconductor package 20 described above, the optical waveguide 36 and the optical circuit chip 50 are connected via the light guide portion 42 as shown in Fig. 1A, but the present disclosure is not limited to this configuration. As in the semiconductor package 21 shown in Fig. 4, the light introduction port 52 may be connected directly to the portion that constitutes the optical waveguide 36. Note that the semiconductor package 21 may have an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44 arranged therein as in the example shown in Fig. 5, or may have an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44 arranged therein as in the example shown in Fig. 6.

[0080] Furthermore, in the semiconductor package 20 described above, the optical circuit chip 50 is disposed on the optoelectronic composite wiring board 30 as shown in FIG. 1A , but the present disclosure is not limited to this configuration. As in the semiconductor package 22 shown in FIG. 7 , the optical circuit chip 50 may be embedded in the insulating layer 34 that constitutes the optoelectronic composite wiring board 30. A reflective mirror 42B may be disposed at the end of the optical waveguide 36 to reflect light toward the light introduction port 52 of the embedded optical circuit chip 50. The semiconductor package 22 may also be configured to include an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44, as in the example shown in FIG. 8 . Furthermore, as in the semiconductor package 23 shown in FIG. 9 , the optical waveguide 36 may be directly connected to the portion that constitutes the light introduction port 52.

[0081] Furthermore, in the semiconductor package 22 described above, the optical circuit chip 50 is embedded in the insulating layer 34 that constitutes the optoelectronic composite wiring board 30, but the present disclosure is not limited to this configuration. As in the semiconductor package 24 shown in FIG. 10 , the optical circuit chip 50 may be embedded in the substrate 32 that constitutes the optoelectronic composite wiring board 30. A reflective mirror 42B may be disposed at the end of the optical waveguide 36 to reflect light toward the light introduction port 52 of the embedded optical circuit chip 50. The semiconductor package 24 may also be configured with an electronic circuit chip 60, an optical circuit chip 50, and an optical connector 44, as in the example shown in FIG. 11 . Furthermore, as in the semiconductor package 25 shown in FIG. 12 , the optical waveguide 36 may be directly connected to the portion that constitutes the light introduction port 52.

[0082] Furthermore, in the semiconductor package 22 described above, the optical circuit chip 50 and the electronic circuit chip 60 are disposed on the insulating layer 34 of the optoelectronic composite wiring board 30, but the present disclosure is not limited to this configuration. As in the semiconductor package 26 shown in Fig. 13 , the optical circuit chip 50 and the electronic circuit chip 60 may be disposed on the surface of the substrate 32 opposite the insulating layer 34. In this case, a through hole 32A is formed in the substrate 32, an optical waveguide 36 is passed through this through hole 32A, and the optical circuit chip 50 is disposed so that the light introduction port 52 is located at the end of the optical waveguide 36. This connects the optical waveguide 36 to the optical circuit chip 50.

[0083] Next, a description will be given of a method for manufacturing optoelectronic composite wiring board 30. Figures 16A to 16I are schematic cross-sectional views for explaining one embodiment of a method for manufacturing optoelectronic composite wiring board 30.

[0084] 16A , an insulating layer 34 having multiple layers made of different materials is formed on a substrate 32 having a wiring layer 33. In this embodiment, a first layer 70 (lower clad layer) is disposed on the substrate 32, a second layer 72 (core layer) is disposed on the first layer 70, and a third layer 74 (upper clad layer) is disposed on the second layer 72. At least one of the first layer 70, the second layer 72, and the third layer 74 is formed using the photosensitive resin composition of the present disclosure.

[0085] The insulating layer 34 may be formed by stacking each of the layers constituting the insulating layer 34 one by one on the substrate 32. For example, as shown in FIG. 17 , the first layer 70 and the third layer 74 may be formed using a liquid resin material L1 (varnish), and the second layer 72 may be formed using a liquid resin material L2 (varnish). In this case, the insulating layer 34 is formed by applying the liquid resin material L1 to the substrate 32, curing the resin material L1, applying the resin material L2 on the resin material L1, and curing the resin material L2, and then applying the resin material L1 on the resin material L2. At least one of the liquid resin material L1 and the liquid resin material L2 may be the photosensitive resin composition of the present disclosure.

[0086] On the other hand, as shown in FIG. 18 , the first layer 70 and the third layer 74 may be formed using a film-like resin material F1, and the second layer 72 may be formed using a film-like resin material F2. In this case, the insulating layer 34 is formed by disposing the film-like resin material F1 on the substrate 32, then disposing the resin material F2 on the resin material F1, and then disposing the resin material F1 on the resin material F2. Note that a film-like protective material P may be provided on each of both sides of the resin material F1. Also, a protective material P may be provided on each of both sides of the resin material F2. Furthermore, when a protective material P is provided on each of both sides of the film-like resin material, the materials of the protective materials P may be different. Specifically, one protective material P may be used to support the film-like resin material, and the other protective material P may be used to protect the surface of the film-like resin material. Note that the film-like resin material may be formed by applying a liquid resin material onto the protective material P, or another protective material P may be placed on the applied resin material. At least one of the film-shaped resin material F1 and the film-shaped resin material F2 may be the photosensitive resin film of the present disclosure.

[0087] 19, a laminated film SF1 may be used in which film-like resin materials F1 and F2 are laminated to form the second layer 72 and the third layer 74. In this case, the amount of protective material P can be reduced, which facilitates cost reduction. Furthermore, manufacturing efficiency is improved compared to when layers are laminated one by one on the substrate 32.

[0088] 20, a laminated film SF2 may be used in which film-like resin materials F1, F2, and F1 are laminated to form the first layer 70, the second layer 72, and the third layer 74. In this case, the amount of protective material P can be further reduced, which facilitates cost reduction. In addition, manufacturing efficiency is improved compared to when layers are laminated one by one on the substrate 32.

[0089] Next, as shown in FIG. 16B, a mask material M1 is placed on the insulating layer 34. Then, the insulating layer 34 is exposed to light. As a result of the exposure, the second layer 72 that constitutes the insulating layer 34 is exposed, as shown in FIG. 16C, and the optical waveguide 36 is formed. Note that the portion of the second layer 72 that is not exposed by the mask material M1 becomes the optical waveguide 36. After the exposure of the insulating layer 34 is complete, the mask material M1 is removed from above the insulating layer 34.

[0090] 16D, a via hole 76 is formed in the insulating layer 34. This via hole 76 is a through hole that continuously penetrates the first layer 70, the second layer 72, and the third layer 74. The via hole 76 may be formed, for example, by drilling, by laser irradiation, or by exposure and development.

[0091] Next, a wiring layer 38 is formed on the insulating layer 34, and a via conductor 78 connecting the wiring layer 33 and the wiring layer 38 is formed in the via hole 76. To form the via conductor 78, first, as shown in FIG. 16E, a seed layer 78A is placed on the insulating layer 34, i.e., on the third layer 74 (the surface of the third layer 74) and on the inner surface of the via hole 76. Next, as shown in FIG. 16F, a resist material R1 is placed on the seed layer 78A. Then, as shown in FIG. 16G, an electroplated layer 78B is placed on the seed layer 78A. Thereafter, as shown in FIG. 16H, the resist material R1 is removed from the seed layer 78A. Then, the portion of the seed layer 78A not covered by the electroplated layer 78B is removed. This forms the via conductor 78 and the wiring layer 38. Note that the portion inside the via hole constitutes the via conductor 78, and the portion on the third layer 74 constitutes the wiring layer 33.

[0092] In this manner, an optoelectronic composite wiring board 30 having optical wiring and electrical wiring is manufactured.

[0093] Next, the laminate film will be described. As shown in FIG. 19, the laminate film SF2 includes a laminate (insulating layer) having a first resin layer containing a substance whose refractive index is modulated by light irradiation, and second resin layers formed on both sides of the first resin layer and having a refractive index different from that of the first resin layer, and a protective material P provided on each side of the laminate to protect both sides. The first resin layer includes a thermosetting resin. The substance contained in this first resin layer may be a substance whose refractive index increases when irradiated with light, or a substance whose refractive index decreases when irradiated with light. The second resin layer may also include a thermosetting resin. One of the two protective materials P may be used as a support film, and the other as a protective film. Here, the support film is not particularly limited, and examples thereof include polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyethersulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, polyarylate, polysulfone, and liquid crystal polymers. Among these, from the viewpoints of flexibility and toughness, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polypropylene, polycarbonate, polyamide, polyimide, polyamideimide, polyphenylene ether, polyphenylene sulfide, polyarylate, and polysulfone are preferred. Furthermore, from the viewpoints of improving the transmittance of actinic rays for exposure and reducing sidewall roughness of the core pattern, it is even more preferable to use a highly transparent support film. Note that, from the viewpoint of improving releasability from the resin layer, a film that has been subjected to a release treatment with a silicone compound, a fluorine-containing compound, or the like may be used as needed. The thickness of the support film may be varied depending on the desired flexibility, but is preferably 3 μm to 250 μm. If the thickness is 3 μm or more, the film strength is sufficient, and if the thickness is 250 μm or less, sufficient flexibility is obtained. From the above viewpoints, the thickness of the support film is more preferably 5 μm to 200 μm, and even more preferably 7 μm to 150 μm.

[0094] A photosensitive resin film produced by applying a photosensitive resin varnish or a photosensitive resin composition to a support film may have a protective film attached to the resin layer, if necessary, to form a three-layer structure consisting of the support film, the resin layer, and the protective film. The protective film is not particularly limited, but from the viewpoints of flexibility and toughness, polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene, etc., are preferred. Furthermore, from the viewpoint of improving peelability from the resin layer, films that have been subjected to a release treatment using a silicone compound, a fluorine-containing compound, or the like may be used as needed. The thickness of the protective film may be varied as appropriate depending on the desired flexibility, but is preferably 10 μm to 250 μm. A thickness of 10 μm or more provides sufficient film strength, while a thickness of 250 μm or less provides sufficient flexibility. From the above viewpoints, the thickness of the protective film is more preferably 15 μm to 200 μm, and even more preferably 20 μm to 150 μm.

[0095] In the present disclosure, a substrate having a plurality of insulating layers on the first wiring may be prepared, and the prepared substrate may be subjected to a treatment such as exposure.

[0096] Although the embodiments of the present disclosure have been described above, these embodiments are merely examples and can be modified in various ways without departing from the spirit of the present disclosure. It goes without saying that the scope of the present disclosure is not limited to these embodiments.

[0097] The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples.

[0098] <Preparation of Photosensitive Resin Composition for Optical Waveguide> Photosensitive resin compositions for optical waveguides of Examples and Comparative Examples were prepared by mixing the components shown below in the blending ratios (parts by mass) shown in Table 1. Blank cells in Table 1 indicate that the corresponding component was not blended.

[0099] (Compounds (A) containing an acidic group in one molecule) Compound (A-1): Acid-modified epoxy acrylate (trade name: KAYARAD UXE-3024, Nippon Kayaku Co., Ltd.) Compound (A-2): Cresol novolac resin (trade name: TR4020G, Asahi Organic Chemicals Co., Ltd.) Compound (A-3): Novolac phenolic resin (trade name: Phenolite LA-7054, DIC Corporation) Compound (A-4): Cresol novolac resin (trade name: EP6030G, Asahi Organic Chemicals Co., Ltd.) Compound (A-5): Acid-modified epoxy acrylate (trade name: KAYARAD ZCR-1569, Nippon Kayaku Co., Ltd.) (Compounds (B) containing an ethylenically unsaturated group) Compound (B-1): Dipentaerythritol hexaacrylate Compound (B-2): Tris(2-acryloyloxyethyl) isocyanurate Compound (B-3): trimethylolpropane trimethacrylate Compound (B-4): cyclohexanedimethanol divinyl ether (compound (C) containing an epoxy group) Compound (C-1): phenol aralkyl epoxy resin (trade name: NC-3000, Nippon Kayaku Co., Ltd.) Compound (C-2): 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate Compound (C-3): hydrogenated epoxy resin (trade name: jER YX8034, Mitsubishi Chemical Corporation) (polymerization initiator (D)) Polymerization initiator (D-1): phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide Polymerization initiator (D-2): triphenylsulfonium hexafluoroantimonate (maleimide compound (E)) Compound (E-1): 3,3'-dimethyl-5,5'-diethyl-4,4'-diphenylmethane bismaleimide Compound (E-2): 2,2-bis[4-(4-maleimidophenoxy)phenyl]propane

[0100] <Evaluation of Photosensitive Resin Composition for Optical Waveguide> Using the photosensitive resin compositions for optical waveguides of Examples and Comparative Examples, a wavelength of 9090 cm －１ ~10526cm －１The integrated value of absorbance at 1000 mJ / cm was determined. First, a sample for measuring absorbance was prepared by molding a photosensitive resin composition for optical waveguides using one of the following two methods. The photosensitive resin composition for optical waveguides was applied to a glass substrate to a thickness of 1 mm. When the photosensitive resin composition for optical waveguides contains an organic solvent, the composition was dried at 100°C for 30 minutes after application to a thickness of 1 mm after drying. The photosensitive resin composition for optical waveguides applied to the glass substrate was exposed to 1000 mJ / cm using an aligner exposure device (Mask Aligner ML-320FSAT, manufactured by Mikasa Co., Ltd.). ３ After irradiating with ultraviolet light of 1000 mJ / cm, the composition was cured at 170°C for 1 hour to obtain a sample for absorbance measurement. The photosensitive resin composition for optical waveguides was applied to a PET film to a thickness of 100 μm. When the photosensitive resin composition for optical waveguides contained an organic solvent, the composition was dried at 100°C for 30 minutes after application to obtain a photosensitive resin film for optical waveguides. This was sequentially laminated onto a glass substrate to form a photosensitive resin composition for optical waveguides with a thickness of 1 mm on the glass substrate. This was exposed to 1000 mJ / cm using an aligner exposure device (Mask Aligner ML-320FSAT, manufactured by Mikasa Co., Ltd.). ３ After irradiating the composition with ultraviolet light, the composition was cured at 170°C for 1 hour to obtain a sample for absorbance measurement. The near-infrared absorption spectrum of the sample for absorbance measurement was measured using a UV-visible-near-infrared absorptiometer (UV-2600, manufactured by Shimadzu Corporation). －１ ~10526cm －１ It was confirmed that there is a positive correlation between the integrated value of absorbance at 1310 nm and the absorbance at 1310 nm. Furthermore, a correlation was also confirmed between the integrated value of absorbance and the ideal propagation loss at 1310 nm calculated from the absorbance at 1310 nm, and it was found that the ideal propagation loss at 1310 nm can be reduced by reducing the integrated value of absorbance. The results are shown in Table 1.

[0101] <Evaluation of Alkaline Developability> A photosensitive resin composition for optical waveguides was applied to a silicon wafer, or a photosensitive resin composition for optical waveguides was applied to a PET film, and then dried at 100°C for 15 minutes to produce a dry film. This dry film was then laminated to produce a test piece having a 50 μm-thick photosensitive resin composition layer for optical waveguides. This test piece was immersed in a 2.38% aqueous solution of tetramethylammonium hydroxide or a 1% aqueous solution of sodium carbonate for 10 minutes, and then washed with distilled water for 5 minutes. As a result, if the photosensitive resin composition layer for optical waveguides was dissolved and removed and could be developed with either developer, it was rated "A," and if it could not be developed with both developers, it was rated "B." The results are shown in Table 1.

[0102] <Evaluation of Photosensitivity> A photosensitive resin composition for optical waveguides was applied to a silicon wafer and dried at 100°C for 15 minutes to prepare a test piece having a 50 μm-thick photosensitive resin composition layer for optical waveguides. Alternatively, a dry film prepared by applying the photosensitive resin composition for optical waveguides to a PET film support was laminated on the silicon wafer to prepare a test piece having a 50 μm-thick photosensitive resin composition layer for optical waveguides. A glass chrome-type photomask (having a wiring pattern with a line width / space width of 50 μm / 50 μm) was placed as a negative mask on this photosensitive resin composition layer for optical waveguides, and an aligner exposure device (Mask Aligner ML-320FSAT, manufactured by Mikasa Co., Ltd.) was used to expose the test piece to light at a wavelength of 365 nm and an exposure dose of 1000 mJ / cm. ２ The photosensitive resin composition layer for optical waveguides was exposed by irradiating with light at a wavelength of 1000 nm. After exposure, if the photosensitive resin composition layer for optical waveguides had a PET film support, the PET film was peeled off to expose the photosensitive resin composition layer for optical waveguides. The exposed photosensitive resin composition layer for optical waveguides was developed by immersing it in a 2.38% aqueous solution of tetramethylammonium hydroxide or a 1% aqueous solution of sodium carbonate for 10 minutes, and then washed with distilled water for 5 minutes. After development, if the unexposed portions were completely removed and no meandering or chipping occurred in the exposed portions, the photosensitivity was evaluated as "A." If there were any unremoved portions in the unexposed portions or if meandering or chipping occurred in the exposed portions, the photosensitivity was evaluated as "B." The results are shown in Table 1.

[0103]

[0104] As shown in Table 1, it was found that the ideal propagation loss at 1310 nm can be reduced by reducing the integrated value of absorbance. Furthermore, in Examples 1 to 8, the evaluations of developability and photosensitivity were good.

[0105] The disclosure of Japanese Patent Application No. 2024-003395, filed on January 12, 2024, is incorporated herein by reference in its entirety. All documents, patent applications, and technical standards mentioned herein are incorporated herein by reference to the same extent as if each individual document, patent application, and technical standard was specifically and individually indicated to be incorporated by reference.

[0106] 20, 21, 22, 23, 24, 25, 26...Semiconductor package, 30...Photoelectric composite wiring board, 32...Substrate, 32A...Through hole, 33...Wiring layer, 34...Insulating layer, 36...Optical waveguide, 38...Wiring layer, 40...Via conductor, 42...Light guide portion, 42A...Guide body, 42B...Reflecting mirror, 44...Optical connector, 50...Optical circuit chip, 52...Light introduction port, 54...Chip electrode, 60...Electronic circuit chip, 62...Chip electrode, 70...First layer, 72...Second layer, 74...Third layer, 76...Via hole, 78...Via conductor, 78A...Seed layer, 78B...Electrolytic plating layer, F1...Resin material, F2...Resin material, L1...Resin material, L2...Resin material, M1...Mask material, P...Protective material, R1...Resist material, SF1...Laminated film, SF2...Laminated film

Claims

1. A photosensitive resin composition for an optical waveguide, wherein the integrated absorbance at a thickness of 1 mm and a wave number of 9090 cm －１ to 10526 cm －１ is 3.00 or less.

2. The photosensitive resin composition for optical waveguides according to claim 1, which contains a compound (A) having an acidic group in one molecule.

3. The photosensitive resin composition for optical waveguides according to claim 1, which contains a compound (B) having an ethylenically unsaturated group.

4. The photosensitive resin composition for optical waveguides according to claim 1, which contains a compound (C) having an epoxy group.

5. The photosensitive resin composition for optical waveguides according to claim 1, which contains a polymerization initiator (D).

6. The photosensitive resin composition for optical waveguides according to claim 1, which contains a maleimide compound (E).

7. A photosensitive resin film comprising a photosensitive resin layer formed using the photosensitive resin composition for optical waveguides according to any one of claims 1 to 6.

8. A photosensitive resin film comprising a base film layer and a photosensitive resin layer located on the base film layer and formed using the photosensitive resin composition for optical waveguides according to any one of claims 1 to 6.

9. A photosensitive resin film comprising a base film layer, a photosensitive resin layer formed using the photosensitive resin composition for optical waveguides according to any one of claims 1 to 6, and a protective film layer in this order.

10. An optical waveguide in which at least one selected from the group consisting of a lower cladding layer, a core layer, and an upper cladding layer is formed using the photosensitive resin composition for optical waveguides according to any one of claims 1 to 6.

11. An optical waveguide in which at least one selected from the group consisting of a lower cladding layer, a core layer, and an upper cladding layer is formed using the photosensitive resin film according to claim 7.

12. An optoelectronic composite substrate comprising the optical waveguide according to claim 10.

13. An optoelectronic composite substrate comprising the optical waveguide according to claim 11.

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