Re-charge method and system, and electronic device and computer-readable storage medium

Abstract

Disclosed are a re-charge method and system, and an electronic device and a computer-readable storage medium. The method comprises: acquiring the solid-liquid area ratio of a silicon material to a silicon melt in a single-crystal furnace; adjusting key parameters of crystal pulling; determining whether a re-charge condition is met, and if the re-charge condition is met, transferring to a centralized control device a re-charge picture of a single-crystal furnace station which requires re-charge; the centralized control device displaying the re-charge picture of the single-crystal furnace station, which requires re-charge, and controlling the single-crystal furnace station, which requires re-charge, to perform re-charge; and repeating the steps, such that the single-crystal furnace station, which needs re-charge, performs re-charge multiple times.

Description

A reinvestment method and system, electronic device and computer-readable storage medium Technical Field

[0001] The present application relates to, but is not limited to, the field of silicon single crystal technology, and in particular to a reinvestment method and system, an electronic device, and a computer-readable storage medium. Background Art

[0002] With the rapid development of the photovoltaic industry, photovoltaic manufacturing is simultaneously promoting automated, intelligent, and efficient production concepts, constantly reshaping the new landscape of photovoltaic factories, and pioneering the layout of the world's leading Industrial 4.0 smart factories, improving the human-machine ratio and enhancing production efficiency through centralized control systems.

[0003] Currently, over 200 single-crystal furnaces are operated by a single person. The main single-crystal pulling process includes initialization, evacuation, leak detection, pressurization, melting, recharging, slag / volatilization, welding, seeding, shoulder release, shoulder rotation, equalizing diameters, finishing, segment removal, recharging, and furnace shutdown. The existing centralized control model has reached the operational limits of personnel. To further improve the human-machine ratio through centralized control, further process upgrades and optimization are required, along with the development of a new centralized control model to overcome these operational limitations. Technical issues

[0004] The re-feeding process takes a long time for the control personnel. Currently, a single furnace runs for about 400 to 500 hours, of which the number of re-feeds reaches 5 to 6 times, and the number of re-feed drums in a single time is about 6. A single furnace needs to re-feed more than 30 drums. The control personnel need to observe the chemical status of each drum after re-feeding to determine whether to re-feed the next drum. A single person operates more than 200 devices. During the concentrated re-feeding period, work time will be wasted due to untimely human observation. Technical Solutions

[0005] In view of the above problems, embodiments of the present application provide a reinvestment method and system, an electronic device, and a computer-readable storage medium.

[0006] The technical solution adopted in the embodiment of the present application is: a re-start method, wherein multiple single crystal furnaces communicate with a centralized control device, and the centralized control device receives re-start information of each single crystal furnace. When any single crystal furnace needs to be re-started, the method includes:

[0007] Obtain the solid-liquid area ratio of silicon material and silicon melt in the single crystal furnace;

[0008] Adjust key crystal pulling parameters according to the solid-liquid area ratio;

[0009] Determine whether the re-start conditions are met. If so, transmit the re-start image of the single crystal furnace that needs to be re-started to the centralized control device;

[0010] The centralized control equipment displays the re-start screen of the single crystal furnace that needs to be re-started, and controls the single crystal furnace that needs to be re-started to re-start;

[0011] Repeat the above steps and re-invest the single crystal furnace multiple times.

[0012] Optionally, determining whether the reinvestment conditions are met includes:

[0013] Determine whether the solid-liquid area ratio of silicon material and silicon melt in the single crystal furnace reaches the preset area ratio value. If so, determine whether the key parameters of crystal pulling reach the preset parameter values. If so, re-invest information transmission.

[0014] Optionally, key parameters for crystal pulling include crucible rotation, crucible position, furnace pressure, inert gas flow rate, main heater power, bottom heater power and guide tube height.

[0015] Optionally, the centralized control device receives the re-investment images of multiple single crystal furnaces, sorts the re-investment images of each single crystal furnace, and centrally manages the re-investment of each single crystal furnace.

[0016] Optionally, when sorting the re-feeding screens of each single crystal furnace, the sorting order is: the re-feeding tube is in the open feeding state screen, the re-feeding tube is in the ready to open state screen, the re-feeding tube is in the unable to open state screen, and the re-feeding tube is in the completed re-feeding state screen.

[0017] Optionally, if the single crystal furnace does not meet the re-start conditions, an alarm is issued and abnormal signal processing is performed.

[0018] Optionally, before obtaining the solid-liquid area ratio of the silicon material to the silicon melt in the single crystal furnace, the method further includes:

[0019] Hang the re-throw cylinder and determine whether the auxiliary chamber is rotating. If so, purify the auxiliary chamber.

[0020] Optionally, the centralized control device controls the single crystal furnace that needs to be re-invested to perform the re-investment step, and the single crystal furnace that needs to be re-invested executes an automatic re-investment process.

[0021] Optionally, the automatic reinvestment process includes:

[0022] Lowering the re-dispensing cylinder to a first position, which is a first preset distance from the zero position of the guide cylinder;

[0023] Re-throw the cylinder to unload the weight;

[0024] The re-feeding drum is used for feeding;

[0025] Lift the rethrow barrel and raise it.

[0026] A re-investment system includes a centralized control device and multiple single crystal furnaces, wherein the multiple single crystal furnaces are connected to the centralized control device for re-investment signal transmission. The centralized control device is configured as follows:

[0027] Receive the re-throw signal of each single crystal furnace;

[0028] Determine whether each single crystal furnace meets the re-investment conditions;

[0029] Receive the re-projected images of each single crystal furnace station and sort the re-projected images of each single crystal furnace station;

[0030] Control each single crystal furnace to re-start.

[0031] Optionally, the single crystal furnace and the centralized control device are connected by wire.

[0032] Optionally, the single crystal furnace and the centralized control device are wirelessly connected.

[0033] Optionally, the single crystal furnace is configured to: obtain the solid-liquid area ratio of silicon material to silicon melt in the single crystal furnace when recharging is required;

[0034] Adjust key crystal pulling parameters according to the solid-liquid area ratio;

[0035] Transmit the re-cast signal to the centralized control equipment;

[0036] Receive re-investment information from centralized control equipment;

[0037] Automatic reinvestment.

[0038] An electronic device includes a memory, a processor, and a computer program stored in the memory and executable on the processor. The processor implements the above method when executing the program.

[0039] A computer-readable storage medium stores a computer program, which implements the above method when executed by a processor. Beneficial effects

[0040] In the embodiment of the present application, multiple single crystal furnaces are respectively connected to the centralized control device. Any single crystal furnace performs a crystal pulling process to pull a single crystal. When any single crystal furnace needs to be re-invested, the solid-liquid area ratio of the silicon material and the silicon melt in the quartz crucible is obtained, and the key parameters of the crystal pulling are adjusted according to the solid-liquid area ratio, and the obtained re-investment information is transmitted to the centralized control device. The centralized control device determines whether the re-investment conditions are met. If so, the centralized control device automatically jumps to the page to display the re-investment screen of the single crystal furnace that needs to be re-invested, and the centralized control device controls the single crystal furnace that needs to be re-invested to automatically re-invest. The centralized control device receives the re-investment screen of each single crystal furnace, and performs intelligent sorting and centralized management, so that the centralized control personnel can centrally control the automatic re-investment of each single crystal furnace, which significantly improves efficiency, realizes automation and intelligence of re-investment, realizes automatic detection of melt status, and automatically controls parameters such as isolation valve and crucible position. The centralized control device realizes functions such as multiple screens and intelligent sorting, so that one person can control multiple single crystal furnaces, effectively improves the man-machine ratio, and improves production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings used in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0042] FIG1 is a schematic diagram of the structure of a reinvestment system according to an embodiment of the present application;

[0043] FIG2 is a logic flow chart of a reinvestment method according to an embodiment of the present application.

[0044] Reference numerals: 1. Single crystal furnace; 2. Centralized control equipment. Implementation Methods of the Application

[0045] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0046] Figure 1 shows a structural schematic diagram of an embodiment of the present application. This embodiment relates to a re-investment method and system, electronic equipment and computer-readable storage medium. Multiple single crystal furnaces are connected to a centralized control device and re-investment information is transmitted. When any single crystal furnace station meets the re-investment conditions, the centralized control device displays the re-investment screen of the single crystal furnace station and controls the single crystal furnace station that needs to be re-invested to re-invest. The centralized control device sorts the re-investment screens of multiple single crystal furnace stations to realize automatic detection of melt status, automatic control of isolation chamber, crucible position and other parameters, and realize multiple screens and intelligent sorting and other functions, so that one person can control multiple single crystal furnaces and improve production efficiency.

[0047] A re-investment method, as shown in Figures 1 and 2, is applied to the single crystal pulling process of multiple single crystal furnaces. The centralized control equipment controls each single crystal furnace to automatically re-invest. In the single crystal production workshop, multiple single crystal furnaces pull single crystals at the same time (the number of single crystal furnaces can be greater than 600). In order to understand the working conditions of each single crystal furnace, a centralized control device, such as a centralized control center, is provided. Each single crystal furnace is connected to the centralized control device, and each single crystal furnace transmits information to the centralized control device. The centralized control device receives the information sent by each single crystal furnace and displays the real-time status of each single crystal furnace in real time, such as: the status of the silicon material in the quartz crucible, the status of the silicon melt, the single crystal pulling status, etc., so that an operator can monitor the working status of multiple single crystal furnaces at the same time and provide timely feedback when an abnormality occurs during the single crystal pulling process. During the single crystal pulling process, it is necessary to observe the material chemical situation after re-feeding and determine whether to re-feed the next barrel. Therefore, each single crystal furnace needs to be combined with a centralized control device. The centralized control device receives the re-feeding picture of any single crystal furnace that needs to be re-feeded, and controls the single crystal furnace that needs to be re-feeded to automatically re-feed, so that the operator can observe and monitor the re-feeding situation of each single crystal furnace at the centralized control device, thereby improving the re-feeding efficiency and improving production efficiency.

[0048] Specifically, a re-start method, as shown in Figures 1 and 2, multiple single crystal furnaces 1 communicate with a centralized control device 2, and the centralized control device 2 receives re-start information of each single crystal furnace 1. When any single crystal furnace 1 needs to be re-started, it includes:

[0049] Obtaining the solid-liquid area ratio of silicon material to silicon melt in the single crystal furnace includes:

[0050] Obtaining the area of ​​the silicon material block and the area of ​​the silicon melt in the single crystal furnace: In each single crystal furnace pulling system, a CCD camera is provided. The CCD camera takes pictures of the silicon material block and the silicon melt in the quartz crucible, and obtains pictures of the silicon material block and the silicon melt in the quartz crucible. Each single crystal furnace stage 1 is equipped with a control device. The control device receives the pictures, performs image processing on the pictures, and calculates the solid area of ​​the silicon material block and the liquid area of ​​the silicon melt in the quartz crucible;

[0051] Calculate the solid-liquid area ratio of the silicon material area to the silicon melt area in the single crystal furnace: Calculate the solid-liquid area ratio based on the area of ​​the silicon material and the area of ​​the silicon melt obtained in the above steps. Solid-liquid area ratio = silicon material area ratio / silicon melt area ratio. Based on the actual area of ​​the silicon material and the area of ​​the silicon melt in the quartz crucible, the actual solid-liquid area ratio of the silicon material area to the silicon melt in the single crystal furnace can be obtained.

[0052] Adjusting the key crystal pulling parameters according to the solid-liquid area ratio: In this step, the control device of each single crystal furnace 1 detects the key crystal pulling parameters in real time, and the control device in each single crystal furnace 1 is configured as follows: multiple solid-liquid area ratios are provided, and each solid-liquid area ratio corresponds to a set of key crystal pulling parameters. Therefore, the key crystal pulling parameters are adjusted according to the actual solid-liquid area ratio obtained by the above calculation, and a set of key crystal pulling parameters are adjusted to the values ​​of the key crystal pulling parameters corresponding to the actual solid-liquid area ratio.

[0053] The key parameters of crystal pulling mentioned above include crucible rotation, crucible position, furnace pressure, inert gas flow rate, main heater power, bottom heater power and guide tube height.

[0054] After the adjustment of the key parameters of the crystal pulling is completed, the single crystal furnace station 1 that needs to be re-invested transmits the re-investment signal to the centralized control device. The centralized control device analyzes the re-investment signal to determine whether the re-investment conditions are met. If so, the re-investment screen of the single crystal furnace station 1 that needs to be re-invested is transmitted to the centralized control device 2 and displayed. This step includes:

[0055] Determine whether the solid-liquid area ratio of the silicon material and the silicon melt in the single crystal furnace reaches the area ratio preset value. If so, determine whether the key parameters of crystal pulling reach the parameter preset value. If so, re-transmit information. If the solid-liquid area ratio of the silicon material block and the silicon melt in the single crystal furnace does not reach the area ratio preset value, repeat the above steps, continue to obtain the solid-liquid area ratio of the silicon material block and the silicon melt in the single crystal furnace, until the solid-liquid area ratio of the silicon material block and the silicon melt in the single crystal furnace reaches the area ratio preset value, and then proceed to the next step of determining whether the key parameters of crystal pulling reach the parameter preset value. If the key parameters of crystal pulling do not reach the parameter preset value, the control device controls the action of the single crystal furnace system, adjusts the key parameters of crystal pulling, adjusts the key parameters of crystal pulling to the parameter preset value, and then re-transmits information.

[0056] Specifically, the single crystal furnace pulling system automatically detects the actual crucible rotation parameter value. When the detected actual crucible rotation parameter value does not reach the crucible rotation parameter preset value, the crucible rotation parameter is automatically adjusted, and the control device controls the quartz crucible rotation speed so that the crucible rotation parameter reaches the crucible rotation parameter preset value.

[0057] The single crystal furnace pulling system automatically detects the actual crucible position parameter value. When the actual crucible position parameter value detected does not reach the preset crucible position parameter value, the crucible position parameter is automatically adjusted. The control device controls the distance between the upper edge of the quartz crucible and the lower edge of the guide tube so that the crucible position parameter reaches the preset crucible position parameter value.

[0058] The single crystal furnace pulling system automatically detects the actual furnace pressure parameter value of the single crystal furnace. When the detected actual furnace pressure parameter value does not reach the preset furnace pressure parameter value, the furnace pressure parameter is automatically adjusted. The control device controls the flow rate of the inert gas entering the single crystal furnace to control the furnace pressure change of the single crystal furnace so that the furnace pressure parameter reaches the preset furnace pressure parameter value.

[0059] The single crystal furnace pulling system automatically detects the actual inert gas flow parameter value. When the detected actual inert gas flow parameter value does not reach the preset inert gas flow parameter value, the inert gas flow parameter is automatically adjusted. The control device controls the degree of opening of the valve on the inert gas inlet pipe so that the inert gas flow parameter reaches the preset inert gas flow parameter value.

[0060] The single crystal furnace pulling system automatically detects the actual main heater power parameter value. When the detected actual main heater power parameter value does not reach the main heater power parameter preset value, the main heater power parameter is automatically adjusted. The control device controls the voltage and / or current of the main heater so that the main heater power parameter reaches the main heater power parameter preset value.

[0061] The single crystal furnace pulling system automatically detects the actual bottom heater power parameter value. When the detected actual bottom heater power parameter value does not reach the bottom heater power parameter preset value, the bottom heater power parameter is automatically adjusted, and the control device controls the voltage and / or current of the bottom heater so that the bottom heater power parameter reaches the bottom heater power parameter preset value.

[0062] The single crystal furnace pulling system automatically detects the actual guide tube descent height parameter value. When the detected actual guide tube descent height parameter value does not reach the guide tube descent height parameter preset value, the guide tube descent height is automatically adjusted, and the control device controls the guide tube lifting device to operate so that the guide tube descent height reaches the guide tube descent height parameter preset value.

[0063] When the key parameters of crystal pulling are adjusted, the single crystal furnace 1 transmits the re-investment signal to the centralized control device 2. The centralized control device 2 receives the re-investment signal and determines that the single crystal furnace that needs to be re-invested meets the re-investment conditions based on the re-investment signal. The centralized control device automatically jumps to the page and displays the real-time re-investment screen of the single crystal furnace 1. The re-investment screen includes the screen inside the quartz crucible and the screen of the re-investment tube, which displays the status of the silicon material and the silicon melt in the quartz crucible, and the situation inside the re-investment tube.

[0064] The above-mentioned step of determining whether the solid-liquid area ratio of the silicon material block to the silicon melt in the single crystal furnace reaches the preset area value includes:

[0065] The solid-liquid area ratio is compared with the preset area ratio value to determine whether the solid-liquid area ratio of the silicon material block and the silicon melt in the single crystal furnace reaches the preset area value.

[0066] If the single crystal furnace station 1 does not meet the re-investment conditions, an alarm will be issued and abnormal signal processing will be performed. The abnormal signal processing here includes adjusting the area ratio of the silicon material to the silicon melt in the above-mentioned quartz crucible if it does not reach the area preset value, and adjusting one or more crystal pulling parameters in a group of key crystal pulling parameters if they do not reach the parameter preset value. The operator performs manual or automatic adjustment.

[0067] The centralized control device 2 displays the re-start screen of the single crystal furnace 1 that needs to be re-started, and controls the single crystal furnace 1 that needs to be re-started to re-start. The centralized control device 2 simultaneously receives the re-start screens of multiple single crystal furnaces 1, sorts the re-start screens of each single crystal furnace 1, and centrally manages the re-start of each single crystal furnace 1. When any single crystal furnace 1 meets the re-start conditions, the single crystal furnace 1 transmits the signal to the centralized control device 2, which receives the signal and displays the real-time re-start screen of the single crystal furnace 1.

[0068] The centralized control device 2 receives the images of all single crystal furnaces 1 and sorts the re-feeding images of each single crystal furnace 1. When sorting, the sorting order is: the re-feeding tube is in the open state and feeding is in progress, the re-feeding tube is in the ready-to-open state, the re-feeding tube is in the state where it cannot be opened, and the re-feeding tube is in the completed state. The sorting is based on the importance of the furnace re-feeding situation. The operator pays attention to the re-feeding tube in the open state and feeding state image, so that the operator can understand and monitor the re-feeding situation of the single crystal furnace 1 in real time. The operator also pays attention to the re-feeding tube in the ready-to-open state image, so that the operator can understand and monitor the opening state of the re-feeding tube of the single crystal furnace 1 in real time. Furthermore, the operator pays attention to the re-feeding tube in the state where it cannot be opened, so that the operator can understand and monitor the state of the re-feeding tube when entering the main chamber of the single crystal furnace in real time. The operator also pays attention to the re-feeding tube in the completed state image, so that the operator can understand and monitor the re-feeding process of the single crystal furnace 1 in real time, and understand and monitor whether the re-feeding is completed.

[0069] When multiple single crystal furnaces 1 are in the same status screen, they are arranged according to the single crystal furnace 1. For example, seven single crystal furnaces 1 are all in the re-feeding tube opening and feeding status screen. The seven single crystal furnaces include: single crystal furnace No. 1, single crystal furnace No. 3, single crystal furnace No. 5, single crystal furnace No. 6, single crystal furnace No. 8, single crystal furnace No. 9, and single crystal furnace No. 10. Then, the re-feeding screens of these seven single crystal furnaces are displayed on the centralized control device 2 in the order of single crystal furnace No. 1, single crystal furnace No. 3, single crystal furnace No. 5, single crystal furnace No. 6, single crystal furnace No. 8, single crystal furnace No. 9, and single crystal furnace No. 10.

[0070] The centralized control device 2 controls the single crystal furnace 1 that needs to be re-invested to perform the re-investment step. The single crystal furnace 1 that needs to be re-invested executes the automatic re-investment process. The centralized control device 2 sends an automatic re-investment signal to the single crystal furnace 1 that needs to be re-invested. The automatic re-investment process is preset in the control device of each single crystal furnace 1. The single crystal furnace 1 that needs to be re-invested executes the automatic re-investment process according to the received re-investment signal.

[0071] The automatic re-investment process includes the following steps:

[0072] The re-throw cylinder is lowered to the first position, which is a first preset distance from the zero position of the guide cylinder. The specific value of the first preset distance is selected and set according to the actual crystal pulling process requirements; the above-mentioned first position is selected according to the diameter size of the guide cylinder, and guide cylinders of different sizes correspond to different first positions. The zero position of the guide cylinder is set according to the process requirements of the actual crystal pulling process of the single crystal furnace.

[0073] The re-throw cylinder is unloading: During the re-throw cylinder unloading step, it is determined whether the re-throw cylinder is in contact with the isolation chamber. If so, the re-throw cylinder unloading is completed. If not, the re-throw cylinder continues to be lowered until the re-throw cylinder is in contact with the isolation chamber, and the re-throw cylinder unloading is completed. Whether the re-throw cylinder is in contact with the isolation chamber is determined based on whether the pressure detection device on the isolation chamber detects a pressure change. When the pressure detection device on the isolation chamber detects a pressure change, the re-throw cylinder is in contact with the isolation chamber. The pressure detection device is a pressure sensor. The pressure detection device is installed on the isolation chamber. When the re-throw cylinder is in contact with the isolation chamber, the pressure sensor can detect the pressure of the re-throw cylinder on the isolation chamber. When the pressure detection device detects a pressure change, it means that the re-throw cylinder has been placed on the isolation chamber and the re-throw cylinder is supported by the isolation chamber, thereby completing the automatic unloading of the re-throw cylinder.

[0074] The re-feeding tube performs feeding: During feeding, the re-feeding tube performs multiple stages of feeding until the silicon material in the re-feeding tube is fully re-fed. After the re-feeding tube is automatically unloaded, the quartz umbrella on the re-feeding tube descends to automatically feed the material. During the descent process, the quartz umbrella gradually descends in stages, gradually re-feeding the silicon material in stages to avoid damage to the quartz crucible due to excessive silicon material feeding and insufficient silicon melt in the quartz crucible. In each feeding stage, the quartz umbrella of the re-feeding tube descends to a first height, and the feeding time is the first time. That is, in each stage of the quartz umbrella's descent, the quartz umbrella descends to a first height and a first time. Here, the first height ranges from 10 mm to 40 mm, and the first time ranges from 1 minute to 3 minutes. The first height and first time are selected based on the size of the re-feeding tube and are not specified here. During the multiple stage descents of the quartz umbrella, the total descent time does not exceed 10 minutes.

[0075] Lift the re-feeding cylinder and bring it out: After the automatic feeding is completed, lift the re-feeding cylinder to the position before it was lowered, close the isolation chamber, unscrew the auxiliary chamber, and bring the re-feeding cylinder out.

[0076] Before obtaining the solid-liquid area ratio of the silicon material block and the silicon melt in the single crystal furnace, the following steps are also included:

[0077] Hang the re-throw cylinder and determine whether the auxiliary chamber is rotating. If so, purify the auxiliary chamber.

[0078] When the single crystal furnace table 1 needs to be recharged, a recharge cylinder is suspended. The recharge cylinder contains silicon material and is suspended from the single crystal furnace sub-chamber via a suspension device within the sub-chamber. The suspension device can be a steel wire rope. The recharge cylinder can be suspended manually or automatically by corresponding equipment. The selection depends on the actual structural configuration of the single crystal furnace table 1 and is not specified here.

[0079] After the re-feeding drum containing silicon material is suspended in the auxiliary chamber of the single crystal furnace, the auxiliary chamber needs to be rotated. A weight detection device is installed on the auxiliary chamber to detect whether there is any weight change in the suspension device. If there is, the auxiliary chamber will be activated, rotated, and closed. If there is no weight change, the auxiliary chamber will not be activated or rotated, and the auxiliary chamber will automatically rotate. This weight detection device is a weight sensor.

[0080] During the rotation of the auxiliary chamber, determining whether the auxiliary chamber has rotated includes determining whether the single crystal furnace table 1 that needs to be re-charged has received the auxiliary chamber position information. If so, the auxiliary chamber has rotated; if not, the auxiliary chamber has not rotated. The position information of the auxiliary chamber is detected by a position detection device, which is a position sensor or a limit sensor.

[0081] Before the auxiliary chamber rotates, the re-throw cylinder is lifted, and the re-throw cylinder is lifted to the second position in the auxiliary chamber so that the auxiliary chamber can rotate smoothly. The second position is a second preset distance from the zero position of the guide cylinder. The specific value of the second preset distance is selected and set according to the actual crystal pulling process requirements; the above-mentioned second position is selected according to the diameter size of the guide cylinder, and guide cylinders of different sizes correspond to different second positions. The zero position of the guide cylinder is set according to the process requirements of the actual crystal pulling process of the single crystal furnace.

[0082] After the auxiliary chamber is circulated, it is purified by introducing inert gas into the single crystal furnace and judging whether the pressure difference between the auxiliary chamber and the main chamber reaches the preset pressure difference value. If so, the purification of the auxiliary chamber is completed. After the sub-chamber is rotated, the isolation chamber is opened and inert gas is introduced to purify the sub-chamber, and the air and other impurities in the sub-chamber and the single crystal furnace are discharged to ensure the purification space in the single crystal furnace to ensure the quality of single crystal pulling. The inert gas can be argon, and the flow rate of the inert gas is controlled. During the process of inert gas introduction, the pressure of the sub-chamber of the single crystal furnace and the pressure of the main chamber of the single crystal furnace are detected in real time, and the pressure difference between the main chamber of the single crystal furnace and the pressure in the sub-chamber is calculated to determine whether the pressure difference between the main chamber of the single crystal furnace and the pressure in the sub-chamber reaches the pressure difference preset value. If so, the sub-chamber purification is completed. If not, continue to introduce inert gas and continue to purify the sub-chamber until the pressure difference between the main chamber of the single crystal furnace and the pressure in the sub-chamber reaches the pressure difference preset value, and the sub-chamber purification is completed. The pressure difference preset value is from 3 Torr to 8 Torr, which is selected according to actual needs. No specific requirements are made here.

[0083] Repeat the above steps, and re-add the single crystal furnace 1 multiple times, and re-add multiple tubes of silicon material. After the re-addition is completed, enter the next procedure.

[0084] A re-investment system includes a centralized control device 2 and multiple single crystal furnaces 1. The multiple single crystal furnaces 1 are connected to the centralized control device 2 to transmit re-investment signals. The connection method can be a wired connection through a cable or the like, or a wireless connection.

[0085] Centralized control device 2 is configured as follows:

[0086] Receive the re-start signal of each single crystal furnace station 1, and determine whether each single crystal furnace station meets the re-start condition;

[0087] Receive the re-investment picture of each single crystal furnace station 1 that meets the re-investment conditions, display the re-investment picture of each single crystal furnace station 1, and sort the re-investment pictures of each single crystal furnace station 1;

[0088] Control each single crystal furnace 1 to re-start.

[0089] Any single crystal furnace 1 is configured as follows: When any single crystal furnace 1 needs to be re-activated, the following steps are performed:

[0090] Obtaining the solid-liquid area ratio of silicon material blocks and silicon melt in the single crystal furnace;

[0091] Adjust key crystal pulling parameters according to the solid-liquid area ratio;

[0092] Transmit the re-cast signal to the centralized control device 2;

[0093] Receive the re-investment information sent by the centralized control device 2 and perform automatic re-investment.

[0094] An electronic device includes a memory, a processor, and a computer program stored in the memory and executable by the processor. When the processor executes the program, the aforementioned method is implemented. This method may be implemented in whole or in part through software, hardware, firmware, or any combination thereof. When implemented using a software program, it may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer-executable instructions. When the computer-executable instructions are loaded and executed on a computer, the process or function according to the aforementioned method is fully or partially generated. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer-executable instructions may be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer-executable instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means.

[0095] A computer-readable storage medium having a computer program stored thereon, which implements the above-described method when executed by a processor. The computer-readable storage medium can be any available medium that can be accessed by a computer or a data storage device such as a server or data center that includes one or more available media. The available medium can be a magnetic medium (e.g., a floppy disk, a hard disk, or a magnetic tape), an optical medium (e.g., a DVD), or a semiconductor medium (e.g., a solid state drive (SSD)).

[0096] Due to the adoption of the above technical solution, multiple single crystal furnaces are connected to the centralized control equipment respectively, and any single crystal furnace performs the crystal pulling process to pull single crystals. When any single crystal furnace needs to be re-invested, the solid-liquid area ratio of the silicon material and the silicon melt in the quartz crucible is obtained, and the key parameters of the crystal pulling are adjusted according to the solid-liquid area ratio, and the obtained re-investment information is transmitted to the centralized control equipment. The centralized control equipment determines whether the re-investment conditions are met. If so, the centralized control equipment automatically jumps to the page to display the re-investment screen of the single crystal furnace that needs to be re-invested, and ... The control equipment controls the single crystal furnace that needs to be re-started to automatically re-start. The centralized control equipment receives the re-start screen of each single crystal furnace, and performs intelligent sorting and centralized management, so that the centralized control personnel can centrally control the automatic re-start of each single crystal furnace, which significantly improves efficiency, realizes automation and intelligence of re-start, realizes automatic detection of melt status, and automatically controls parameters such as isolation valve and crucible position. The centralized control equipment realizes functions such as multiple screens and intelligent sorting, so that one person can control multiple single crystal furnaces, effectively improving the man-machine ratio and improving production efficiency.

[0097] The above detailed description of the embodiment of the present application is only one embodiment of the present application and should not be considered to limit the scope of implementation of the present application. All equivalent changes and improvements made within the scope of the present application should still fall within the scope of the patent application.

Claims

1. A method for re-investment, wherein, Multiple single crystal furnace platforms are all in communication with the centralized control device, and the centralized control device receives the recharging information of each single crystal furnace platform. When any single crystal furnace platform needs to be recharged, it includes: Obtain the solid-liquid area ratio of the silicon material and silicon melt in the single crystal furnace; Adjust the key crystal pulling parameters according to the solid-liquid area ratio; Judge whether the recharging condition is satisfied. If so, transmit the recharging screen of the single crystal furnace platform that needs to be recharged to the centralized control device; The centralized control device displays the recharging screen of the single crystal furnace platform that needs to be recharged and controls the single crystal furnace platform that needs to be recharged to perform recharging; Repeat the above steps, and the single crystal furnace platform that needs to be recharged performs multiple recharges.

2. The re-investment method according to claim 1, wherein The judgment of whether the recharging condition is satisfied includes: Judge whether the solid-liquid area ratio of the silicon material and silicon melt in the single crystal furnace reaches the preset area ratio value. If so, judge whether the key crystal pulling parameters reach the preset parameter value. If so, then perform the transmission of recharging information.

3. The re-investment method according to claim 2, wherein, The key crystal pulling parameters include crucible rotation, crucible position, furnace pressure, inert gas flow rate, main heater power, bottom heater power, and deflector height.

4. The re-investment method according to any one of claims 1 to 3, wherein, The centralized control device receives the recharging screens of multiple single crystal furnace platforms, sorts the recharging screens of each single crystal furnace platform, and performs centralized collection and management of the recharges of each single crystal furnace platform.

5. The re-injection method according to claim 4, wherein, When sorting the recharging screens of each single crystal furnace platform, the sorting order is as follows: the screen of the recharging cylinder being open and in the state of feeding, the screen of the recharging cylinder being in the state of being ready to open, the screen of the recharging cylinder being in the state of not being able to open, and the screen of the recharging cylinder being in the state of completing recharging.

6. The re-investment method according to claim 1, wherein If the single crystal furnace platform that needs to be recharged does not meet the recharging condition, an alarm is given and abnormal signal processing is performed.

7. The re-investment method according to any one of claims 1 to 3 and 5 to 6, wherein, Before obtaining the solid-liquid area ratio of the silicon material and silicon melt in the single crystal furnace, it further includes: Suspend the recharging cylinder and judge whether the secondary chamber rotates back. If so, perform secondary chamber purification.

8. The re-investment method according to any one of claims 1 to 3 and 5 to 6, wherein, In the step where the centralized control device controls the single crystal furnace platform that needs to be recharged to perform recharging, the single crystal furnace platform that needs to be recharged executes an automatic recharging process.

9. The re-investment method according to claim 8, wherein, The automatic recharging process includes: Lower the recharging cylinder, and the recharging cylinder descends to the first position, and the first position is at the first preset distance from the zero position of the deflector; The recharging cylinder unloads the weight; The recharging cylinder feeds the material; Lift the recharging cylinder and remove it.

10. A re-investment system, wherein, It includes a centralized control device and multiple single crystal furnace platforms. Multiple said single crystal furnace platforms are all connected to the centralized control device to perform recharging signal transmission, and the centralized control device is configured to: Receive the recharging signals of each single crystal furnace platform; Judge whether each single crystal furnace platform meets the recharging condition; Receive the recharging screens of each single crystal furnace platform and sort the recharging screens of each single crystal furnace platform; Control each single crystal furnace platform to perform recharging.

11. The re-injection system according to claim 10, wherein, The single crystal furnace platform and the centralized control device are connected by wire.

12. The re-investment system according to claim 10, wherein, The single crystal furnace platform and the centralized control device are connected wirelessly.

13. The re-injection system according to claim 10, wherein, The single crystal furnace platform is configured to: when recharging is required, obtain the solid-liquid area ratio of the silicon material and silicon melt in the single crystal furnace; Adjust the key crystal pulling parameters according to the solid-liquid area ratio; Transmit the recharging signal to the centralized control device; Receive the recharging information of the centralized control device; Perform automatic recharging.

14. An electronic device, wherein, It includes a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the program, it implements the method described in any one of claims 1 to 9.

15. A computer-readable storage medium, wherein, A computer program is stored thereon, and when the program is executed by a processor, the method according to any one of claims 1 to 9 is implemented.

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