Quantum dot composite, quantum dot composition comprising same, and electronic device comprising same
The quantum dot complex with specific ligands addresses the oxidation issue, improving light resistance and stability, thereby enhancing the efficiency and lifespan of quantum dot-based electronic devices.
Patent Information
- Application Number
- PCT/KR2025/000841
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-01-19
- Filing Date
- 2025-01-14
- Publication Date
- 2025-07-24
AI Technical Summary
Quantum dots are prone to oxidation by moisture and oxygen, leading to a decrease in efficiency, and existing methods to coordinate reactive ligands have not effectively prevented this oxidation.
A quantum dot complex is developed with a bidentate ligand containing an ethylene glycol group and a ligand with an acryloyl group, along with a carboxylate group, to enhance photostability by improving ligand binding and dispersibility in solvents.
The quantum dot complex exhibits improved light resistance and stability, enhancing the efficiency and lifespan of electronic devices using quantum dots.
Smart Images

Figure KR2025000841_24072025_PF_FP_ABST
Abstract
Description
Quantum dot complex, quantum dot composition including same, and electronic device including same
[0001] The present invention relates to a quantum dot complex, a quantum dot composition including the same, and an electronic device including the same.
[0002] Quantum dots are semiconductor nanocrystals that exhibit the quantum confinement effect. When exposed to light from an excitation source and reach an energy excited state, they emit energy according to their corresponding energy band gap. Even for the same material, quantum dots exhibit wavelengths that vary depending on particle size. Therefore, by adjusting the size of the quantum dots, light of a desired wavelength range can be obtained. Furthermore, they exhibit characteristics such as excellent color purity and high luminous efficiency, making them suitable for a variety of devices.
[0003] Quantum dots can be utilized as materials that perform various optical functions (e.g., photoconversion) among optical elements. Quantum dots are nano-sized semiconductor nanocrystals. By controlling the size and composition of the nanocrystals, they can have different energy bandgaps, thereby emitting light of various emission wavelengths.
[0004] Optical elements including such quantum dots may be in the form of thin films, for example, patterned for each subpixel. Such optical elements may also be utilized as color conversion elements in devices containing various light sources.
[0005] However, there was a problem that the quantum dots were easily oxidized by moisture and oxygen, and efficiency decreased when the quantum dots were oxidized.
[0006] To solve this problem, a method of coordinating reactive ligands around quantum dots was proposed, but it was difficult to effectively prevent oxidation of quantum dots due to desorption and rearrangement of ligands.
[0007] The present invention provides a quantum dot complex with improved photostability, a quantum dot composition comprising the same, and an electronic device comprising the same.
[0008] According to one aspect,
[0009] A quantum dot; and a quantum dot complex comprising a first ligand and a second ligand coordinating the quantum dot surface are provided. The first ligand is a bidentate ligand in a chain form containing an ethylene glycol group (-OCH2CH2O-), and the second ligand is a ligand containing an acryloyl group (CH2=CHC(=O)-) and an ethylene glycol group.
[0010] In one embodiment, the first ligand may be represented by the following chemical formula 1:
[0011] <Chemical Formula 1>
[0012]
[0013] In the above chemical formula 1,
[0014] R1 is a C1-C2 alkyl group,
[0015] R2 is independently hydrogen or a C1-C2 alkyl group,
[0016] a1 is one of the integers 2 to 4,
[0017] a2 is one of the integers 0 to 3,
[0018] a3 can be an integer between 1 and 2.
[0019] In one embodiment, R1 is a methyl group, and R2 can be independently hydrogen or a methyl group.
[0020] In one embodiment, R1 may be a methyl group and R2 may be hydrogen.
[0021] In one embodiment, both R1 and R2 can be methyl groups.
[0022] In one implementation, a1 can be 2 or 3.
[0023] In one implementation, a2 may be 3 and a3 may be 1.
[0024] In one embodiment, the first ligand may be selected from the following compounds:
[0025]
[0026] In one embodiment, the second ligand may further include a carboxylate group (-C(=O)OH), and the second ligand may be coordinated to the surface of the quantum dot by the carboxylate group (-C(=O)OH).
[0027] In one embodiment, the second ligand may be a compound:
[0028]
[0029] In one embodiment, the total content of the first ligand and the second ligand may range from about 15 to about 25 weight % relative to the weight of the entire quantum dot.
[0030] In one embodiment, the molar ratio of the first ligand to the second ligand may be from 0.3:1 to 0.8:1.
[0031] In one embodiment, the quantum dot may include a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV element or compound; or any combination thereof.
[0032] In one embodiment, the quantum dot may include a core and a shell covering the core.
[0033] In one embodiment, the quantum dot may include a CIGS (copper induium gallium sulfide) core and a ZnS shell.
[0034] According to another aspect, a quantum dot composition comprising the above-described quantum dot complex and a solvent is provided.
[0035] According to another aspect, an electronic device comprising the above-described quantum dot complex is provided.
[0036] In one embodiment, the electronic device may further include a color filter and / or a color conversion layer, and the color filter or the color conversion layer may include the quantum dot composite.
[0037] In one embodiment, the electronic device further includes a light source, and the light source may be a light emitting device including a first electrode; a second electrode facing the first electrode; and a light emitting layer disposed between the first electrode and the second electrode.
[0038] According to another aspect, an electronic device including the electronic component is provided. The electronic device may be a flat panel display, a curved display, a computer monitor, a medical monitor, a television, a billboard, an indoor or outdoor lighting and / or signal light, a head-up display, a fully or partially transparent display, a flexible display, a rollable display, a foldable display, a stretchable display, a laser printer, a telephone, a mobile phone, a tablet, a phablet, a personal digital assistant (PDA), a wearable device, a laptop computer, a digital camera, a camcorder, a viewfinder, a microdisplay, a 3D display, a virtual reality or augmented reality display, a vehicle, a video wall including multiple displays tiled together, a theater or stadium screen, a phototherapy device, or a signage.
[0039] According to one embodiment, the quantum dot complex has improved light resistance by introducing the first ligand and the second ligand to the surface of the quantum dot, thereby improving the efficiency and lifespan of an electronic device using the same.
[0040] Figure 1 is a schematic cross-sectional view of the structure of a light-emitting device according to one embodiment.
[0041] Figures 2 and 3 are schematic cross-sectional views of a light emitting device according to one embodiment of the present invention.
[0042] Figure 4 is a graph showing the change in photoconversion efficiency over time of the quantum dot complexes of Test Examples 1 to 7.
[0043] Figure 5 is a graph showing changes in the photoconversion efficiency of the quantum dot complexes of Examples 1 to 3 and Comparative Examples 1 to 3 over time.
[0044] Figure 6 is a graph showing changes in the photoconversion efficiency of the quantum dot complexes of Examples 1 to 3 and Comparative Examples 1 to 3 over time.
[0045] Figure 7 is a thermogravimetric analysis graph for the CIGS quantum dot composites obtained in Test Examples 1 and 4, Examples 2 and 5, and Comparative Example 5.
[0046] The present invention is capable of various modifications and embodiments. Specific embodiments are illustrated in the drawings and described in detail in the detailed description. The effects and features of the present invention, as well as the methods for achieving them, will become clearer with reference to the embodiments described in detail below, along with the drawings. However, the present invention is not limited to the embodiments disclosed below and can be implemented in various forms.
[0047] In the examples below, singular expressions include plural expressions unless the context clearly indicates otherwise.
[0048] In the examples below, terms such as “include” or “have” mean that a feature or component described in the specification is present, and do not preclude the possibility that one or more other features or components may be added.
[0049] In the following examples, when a part such as a film, region, component, etc. is said to be on or above another part, it includes not only a case where it is directly on top of the other part, but also a case where another film, region, component, etc. is interposed in between.
[0050] When explaining with reference to drawings, identical or corresponding components are given the same drawing reference numerals and redundant descriptions thereof are omitted.
[0051] For convenience of explanation, the sizes of components in the drawings may be exaggerated or reduced. For example, the sizes and thicknesses of each component shown in the drawings are arbitrarily indicated for convenience of explanation, and thus the present invention is not necessarily limited to what is shown.
[0052] As used herein, the term "quantum dot complex" refers to a material comprising a quantum dot and a ligand coordinating the quantum dot. The quantum dot may include a core and a shell surrounding the core.
[0053] In this specification, “photo conversion efficiency (PCE)” means the ratio of fluorescent photons to excitation photons.
[0054] [Quantum Dot Complex]
[0055] According to one embodiment, a quantum dot complex may include a quantum dot; and a first ligand and a second ligand each coordinating the quantum dot surface. The first ligand may be a bidentate ligand in the form of a chain including an ethylene glycol group (-OCH2CH2O-), and the second ligand may be a ligand including an acryloyl group (CH2=CHC(=O)-) and an ethylene glycol group.
[0056] Quantum dot ligands can protect quantum dots and evenly disperse them in a solvent. To perform these functions, the quantum dot ligands according to the present embodiment may include two types of ligands with different structures.
[0057] In one embodiment, the first ligand may be represented by the following chemical formula 1:
[0058] <Chemical Formula 1>
[0059]
[0060] In the above chemical formula 1,
[0061] R1 is a C1-C2 alkyl group,
[0062] R2 is independently hydrogen or a C1-C2 alkyl group,
[0063] a1 is one of the integers 2 to 4,
[0064] a2 is one of the integers 0 to 3,
[0065] a3 can be an integer between 1 and 2.
[0066] In one embodiment, R1 is a methyl group or an ethyl group, and R2 can be independently hydrogen or a methyl group. For example, in one embodiment, R1 is a methyl group, and R2 can be independently hydrogen or a methyl group.
[0067] In one embodiment, R1 may be a methyl group or an ethyl group, and R2 may be hydrogen. For example, in one embodiment, R1 may be a methyl group, and R2 may each be hydrogen.
[0068] In one embodiment, both R1 and R2 can be methyl groups.
[0069] In one implementation, a1 can be 2 or 3.
[0070] In one implementation, a2 may be 3.
[0071] In one implementation, a3 can be 1.
[0072] For example, in one implementation, a1 can be 2 or 3, a2 can be 3, and a3 can be 1.
[0073] In one embodiment, the first ligand may be selected from the following compounds:
[0074]
[0075] The first ligand has a chain form including an ethylene glycol group (-OCH2CH2O-), thereby increasing the solubility of the quantum dot in a hydrophilic solvent and minimizing contact between the quantum dot and an external source that can oxidize the quantum dot. In addition, the first ligand can be more stably bound to the quantum dot by being coordinately bonded to the quantum dot at two locations. The first ligand can have more polarity than when it has an aryloxy group or a long alkoxy group by having a short alkoxy group at the end of the chain. In one embodiment, the first ligand may have a hydrogen atom in the ethylene glycol group replaced with a short alkyl group.
[0076] The second ligand above can increase the dispersibility of the quantum dot complex in a hydrophilic solvent by including an acryloyl group (CH2=CHC(=O)-) and an ethylene glycol group. When the quantum dot complex is evenly dispersed in the solvent, light-induced stress is also dispersed, thereby improving the light resistance of the quantum dot complex film.
[0077] In one embodiment, the second ligand further includes a carboxylate group (-C(=O)OH) and can be coordinated to the surface of the quantum dot by the carboxylate group (-C(=O)OH). By coordinating the second ligand to the surface of the quantum dot by the carboxylate group, photostability can be enhanced.
[0078] In one embodiment, the second ligand may comprise the following compound:
[0079]
[0080] A quantum dot complex according to one embodiment can have improved light resistance by including both the first ligand and the second ligand. This is believed to be due to achieving a balance between strengthening the binding of the ligand to the quantum dot and improving the dispersibility of the ligand in a solvent.
[0081] In one embodiment, the total content of the first ligand and the second ligand in the quantum dot complex may be in the range of 15 to 25 wt % based on the total weight of the quantum dot complex. For example, the sum of the total content of the first ligand and the total content of the second ligand in the quantum dot complex may be in the range of about 15 to about 25 wt % based on the total weight of the quantum dot complex. When the total content of the first ligand and the second ligand is in the above range, the light resistance of the quantum dot complex may be improved. The first ligand and the second ligand may be introduced into the quantum dot complex by exchange of native ligands. In one embodiment, the native ligand of the quantum dot complex may include, but is not limited to, oleic acid, lauric acid, or stearic acid, for example.
[0082] In one embodiment, the molar ratio of the first ligand to the second ligand may be in the range of 0.3:1 to 0.8:1. When the molar ratio of the first ligand to the second ligand is in the above range, the light resistance of the quantum dot complex may be improved. In one embodiment, the quantum dot may have a core-shell structure including a core including a semiconductor compound; and a shell including a semiconductor compound.
[0083] In one embodiment, the quantum dot may include a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV element or compound; or any combination thereof.
[0084] Examples of the above II-VI group semiconductor compounds include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; It may include a four-element compound such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.; or any combination thereof.
[0085] Examples of the III-V group semiconductor compound may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb; or any combination thereof. Meanwhile, the III-V group semiconductor compound may further include a group II element. Examples of group III-V semiconductor compounds that further include group II elements may include InZnP, InGaZnP, InAlZnP, etc.
[0086] Examples of the III-VI group semiconductor compounds may include binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.; ternary compounds such as InGaS3, InGaSe3, etc.; or any combination thereof.
[0087] Examples of the above I-III-VI group semiconductor compounds may include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, etc.; or quaternary compounds such as AgInGaS, AgInGaS2; or any combination thereof.
[0088] Examples of the IV-VI group semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; or any combination thereof.
[0089] The above group IV element or compound may include a single element material such as Si, Ge, etc.; a binary element compound such as SiC, SiGe, etc.; or any combination thereof.
[0090] Each element included in a multi-element compound such as the above binary, ternary and quaternary compounds may be present in the particle at a uniform concentration or a non-uniform concentration.
[0091] In one embodiment, the semiconductor compound included in the shell may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb or any combination thereof.
[0092] In one embodiment, the quantum dot may comprise a CIGS (copper indium gallium sulfide) core and a ZnS or GaS shell.
[0093] In embodiments, the shape of the quantum dot may be specifically a spherical, pyramidal, multi-arm, or cubic nanoparticle, nanotube, nanowire, nanofiber, nanoplatelet, or the like.
[0094] By adjusting the size of the quantum dots, the energy band gap can be controlled, and thus, by using quantum dots of different sizes, light-emitting devices that emit light of various wavelengths can be realized. For example, the size of the quantum dots can be selected to emit red or green light. Furthermore, the size of the quantum dots can be configured to combine light of various colors to emit white light.
[0095] [Quantum Dot Composition]
[0096] According to another aspect, a quantum dot composition comprising the quantum dot complex is provided.
[0097] In one embodiment, the quantum dot composition may include a quantum dot complex, a crosslinking monomer, and an initiator.
[0098] The above crosslinking monomer may be, for example, an acrylic monomer. The crosslinking monomers include, for example, 1,6-hexanediol diacrylate, 2-ethylhexyl (meth)acrylate, ethyl (meth)acrylate, methyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, pentyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, isononyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, n-hexyl (meth)acrylate, n-nonyl (meth)acrylate, isoamyl (meth)acrylate, n-decyl (meth)acrylate, isodecyl (meth)acrylate, dodecyl (meth)acrylate, isobornyl (meth)acrylate, cyclohexyl (meth)acrylate, phenyl (meth)acrylate, benzyl (meth)acrylate, isostearyl (meth)acrylate, 2-methylbutyl (meth)acrylate, or any combination thereof.
[0099] The initiator may include, for example, diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide, 4-acryloxybenzophenone, 2,2-dimethoxy-2-phenylacetophenone, 2-hydroxy-2-methyl-1-phenyl-1-propan-1-one, ethyl(2,4,6-trimethylbenzoyl)phenyl phosphinate, bisacylphosphine oxide, or any combination thereof.
[0100] In one embodiment, the quantum dot composition may further include an additive in addition to the crosslinking monomer and initiator. The additive may include, for example, a substance that enhances the light stability, heat stability, or storage stability of the quantum dot complex. The additive may include, for example, a UV stabilizer, a heat stabilizer, or a reaction inhibitor.
[0101] In one embodiment, the quantum dot composition may include a quantum dot complex and a solvent.
[0102] In one embodiment, the solvent may be hydrophobic or hydrophilic.
[0103] In one embodiment, the hydrophobic solvent may include at least one of an aliphatic hydrocarbon and an aromatic hydrocarbon.
[0104] For example, the hydrophobic solvent may include at least one of: alkanes such as n-pentane, n-hexane, n-heptane, n-octane, n-nonane, n-decane, dodecane, hexadecane, and oxadecane; haloalkanes such as dichloromethane, 1,2-dichloroethane, and 1,1,2-trichloroethane; cycloalkanes such as cyclohexane and methylcyclohexane; aromatic hydrocarbons such as toluene, xylene, mesitylene, ethylbenzene, n-hexylbenzene, cyclohexylbenzene, trimethylbenzene, and tetrahydronaphthalene; haloaryls such as chlorobenzene, o-dichlorobenzene, and cyclohexylbenzene.
[0105] In one embodiment, the hydrophilic solvent may include at least one of an alcohol group, an ether group, a ketone group, and an ester group.
[0106] For example, the hydrophilic solvent may be an alkylene glycol alkyl ether such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol methyl ethyl ether, etc.; a diethylene glycol dialkyl ether such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, etc.; a alkylene glycol alkyl ether acetate such as methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, etc.; an alkoxyalkyl acetate such as methoxybutyl acetate, methoxypentyl acetate, etc.; an aromatic hydrocarbon such as benzene, toluene, xylene, and mesitylene; It may include at least one of ketones such as methyl ethyl ketone, acetone, methyl amyl ketone, methyl isobutyl ketone, and cyclohexanone; alcohols such as ethanol, propanol, butanol, hexanol, cyclohexanol, ethylene glycol, and glycerin; esters such as 3-ethoxypropionic acid ethyl ester, 3-methoxypropionic acid methyl ester, and 3-phenyl-propionic acid ethyl ester; cyclic esters such as γ-butyrolactone; and methoxybenzene (anisole).
[0107] In one embodiment, the viscosity of the composition (@25°C) may be 2 to 30 cP.
[0108] When the viscosity is within the above range, the composition according to one embodiment of the present invention may be suitable for forming a layer using a solution process, for example, spin coating or inkjet.
[0109] [Light-emitting element]
[0110] [Description of Figure 1]
[0111] Fig. 1 schematically illustrates a cross-sectional view of a light-emitting device (10) according to one embodiment of the present invention. The light-emitting device (10) includes a first electrode (110), an intermediate layer (130), and a second electrode (150).
[0112] Hereinafter, the structure and manufacturing method of a light-emitting element (10) according to one embodiment of the present invention will be described with reference to FIG. 1.
[0113] [First electrode (110)]
[0114] A substrate may be additionally placed below the first electrode (110) or above the second electrode (150) of FIG. 1. A glass substrate or a plastic substrate may be used as the substrate. Alternatively, the substrate may be a flexible substrate, and may include a plastic having excellent heat resistance and durability, such as, for example, polyimide, polyethylene terephthalate (PET), polycarbonate, polyethylene naphtalate, polyarylate (PAR), polyetherimide, or any combination thereof.
[0115] The first electrode (110) may be formed, for example, by providing a first electrode material on the upper portion of the substrate using a deposition method or a sputtering method. When the first electrode (110) is an anode, a high-work function material that is easy to inject holes may be used as the first electrode material.
[0116] The first electrode (110) may be a reflective electrode, a semi-transmissive electrode, or a transmissive electrode. In order to form the first electrode (110) as a transmissive electrode, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), or any combination thereof may be used as a first electrode material. Alternatively, in order to form the first electrode (110) as a semi-transmissive electrode or a reflective electrode, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), or any combination thereof may be used as a first electrode material.
[0117] The first electrode (110) may have a structure consisting of a single layer or a structure including multiple layers. For example, the first electrode (110) may have a three-layer structure of ITO / Ag / ITO.
[0118] [Middle layer (130)]
[0119] An intermediate layer (130) is arranged on the upper portion of the first electrode (110). The intermediate layer (130) includes a light-emitting layer.
[0120] The intermediate layer (130) may further include a hole transport region disposed between the first electrode (110) and the light-emitting layer and an electron transport region disposed between the light-emitting layer and the second electrode (150).
[0121] The above intermediate layer (130) may further include, in addition to various organic substances, metal-containing compounds such as organometallic compounds, and inorganic substances such as quantum dots.
[0122] Meanwhile, the intermediate layer (130) may include two or more emitting units stacked between the first electrode (110) and the second electrode (150) and at least one charge generation layer disposed between adjacent units among the two or more emitting units. When the intermediate layer (130) includes two or more emitting units and at least one charge generation layer as described above, the light-emitting element (10) may be a tandem emitting element.
[0123] [Hole transport region in the middle layer (130)]
[0124] The above-mentioned hole transport region may have a structure consisting of a layer consisting of a single material, a structure consisting of a layer including different materials, or a structure including a plurality of layers including different materials.
[0125] The above hole transport region may include a hole injection layer, a hole transport layer, a light-emitting auxiliary layer, an electron blocking layer, or any combination thereof.
[0126] In one embodiment, the hole transport region may have a multilayer structure of a hole injection layer / hole transport layer, a hole injection layer / hole transport layer / luminescent auxiliary layer, a hole injection layer / luminescent auxiliary layer, a hole transport layer / luminescent auxiliary layer, or a hole injection layer / hole transport layer / electron blocking layer, which are each stacked in the order described from the first electrode (110), but the structure of the hole transport region is not limited thereto.
[0127] In one embodiment, the hole transport region may include a compound represented by the following chemical formula 201, a compound represented by the following chemical formula 202, or any combination thereof:
[0128] <Chemical Formula 201>
[0129]
[0130] <Chemical Formula 202>
[0131]
[0132] Among the above chemical formulas 201 and 202,
[0133] L 201 Inland L 204 are independent of each other, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group,
[0134] L 205 Silver, *-O-*', *-S-*', *-N(Q 201 )-*', at least one R 10a C1-C substituted or unsubstituted 20 alkylene group, at least one R 10a C2-C substituted or unsubstituted 20 alkenylene group, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group,
[0135] xa1 to xa4 are each independently an integer from 0 to 5,
[0136] xa5 is an integer between 1 and 10,
[0137] R 201 Inland R 204 and Q 201 are independent of each other, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group,
[0138] R 201 and R 202 is optionally a single bond, at least one R 10a A C1-C5 alkylene group substituted or unsubstituted with or at least one R 10a Connected to each other through a C2-C5 alkenylene group substituted or unsubstituted with at least one R 10a C8-C substituted or unsubstituted 60 can form a polycyclic group (e.g., a carbazole group, etc.) (see, for example, compound HT16, etc. below),
[0139] R 203 and R 204 is optionally a single bond, at least one R 10a A C1-C5 alkylene group substituted or unsubstituted with or at least one R 10a Connected to each other through a C2-C5 alkenylene group substituted or unsubstituted with at least one R 10a C8-C substituted or unsubstituted 60 can form a polycyclic group,
[0140] na1 can be any integer from 1 to 4.
[0141] For example, each of the compound represented by the above chemical formula 201 and the compound represented by the chemical formula 202 may independently include at least one of the groups represented by the following chemical formulas CY201 to CY217:
[0142]
[0143] Among the chemical formulas CY201 to CY217, R 10b and R 10c are independently of each other in this specification R 10a Same as described for CY ring 201 Inland Ring CY 204 are independent of each other, C3-C 20 Carbocyclic group or C1-C20 A heterocyclic group, and at least one hydrogen of the chemical formulas CY201 to CY217 is R as described herein. 10a It can be substituted or unsubstituted.
[0144] In one embodiment, the ring CY among the chemical formulas CY201 to CY217 201 Inland Ring CY 204 can be, independently of each other, a benzene group, a naphthalene group, a phenanthrene group, or an anthracene group.
[0145] According to another embodiment, each of the compound represented by the chemical formula 201 and the compound represented by the chemical formula 202 may independently include at least one of the groups represented by the chemical formulas CY201 to CY203.
[0146] According to another embodiment, the compound represented by the chemical formula 201 may each include at least one of the groups represented by the chemical formulas CY201 to CY203 and at least one of the groups represented by the chemical formulas CY204 to CY217.
[0147] According to another embodiment, in the above chemical formula 201, xa1 is 1, and R 201 is a group represented by one of the chemical formulas CY201 to CY203, xa2 is 0, and R 202 may be a group represented by one of the chemical formulas CY204 to CY207.
[0148] According to another embodiment, each of the compound represented by the chemical formula 201 and the compound represented by the chemical formula 202 may not include a group represented by the chemical formulas CY201 to CY203.
[0149] According to another embodiment, each of the compound represented by the chemical formula 201 and the compound represented by the chemical formula 202 may not include a group represented by the chemical formulas CY201 to CY203, and may independently include at least one of the groups represented by the chemical formulas CY204 to CY217.
[0150] As another example, each of the compounds represented by the above chemical formula 201 and the compounds represented by the above chemical formula 202 may not include a group represented by the above chemical formulas CY201 to CY217.
[0151] For example, the hole transport region is one of the compounds HT1 to HT46, m-MTDATA, TDATA, 2-TNATA, NPB(NPD), β-NPB, TPD, Spiro-TPD, Spiro-NPB, methylated-NPB, TAPC, HMTPD, TCTA(4,4',4"-tris(N-carbazolyl)triphenylamine (4,4',4"-tris(N-carbazolyl)triphenylamine)), Pani / DBSA (Polyaniline / Dodecylbenzenesulfonic acid (Polyaniline / Dodecylbenzenesulfonic acid)), PEDOT / PSS(Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate) (Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate))), Pani / CSA (Polyaniline / Camphor sulfonic acid) (Polyaniline / camphorsulfonic acid)), PANI / PSS (Polyaniline / Poly(4-styrenesulfonate)), or any combination thereof:
[0152]
[0153]
[0154]
[0155]
[0156]
[0157]
[0158]
[0159]
[0160] The thickness of the hole transport region may range from about 50 Å to about 10,000 Å. For example, the thickness of the hole transport region may range from about 100 Å to about 4,000 Å. When the hole transport region includes a hole injection layer, a hole transport layer, or any combination thereof, the thickness of the hole injection layer may range from about 100 Å to about 9,000 Å, and the thickness of the hole transport layer may range from about 50 Å to about 2,000 Å. For example, the thickness of the hole injection layer may range from about 100 Å to about 1,000 Å. For example, the thickness of the hole transport layer may range from about 100 Å to about 1,500 Å. When the thicknesses of the hole transport region, the hole injection layer, and the hole transport layer satisfy the ranges described above, satisfactory hole transport characteristics can be obtained without a substantial increase in driving voltage.
[0161] The above-mentioned light-emitting auxiliary layer is a layer that serves to increase light emission efficiency by compensating for the optical resonance distance according to the wavelength of light emitted from the light-emitting layer, and the above-mentioned electron-blocking layer is a layer that serves to prevent electrons from leaking from the hole transport region to the light-emitting layer. A material that can be included in the above-mentioned hole transport region can be included in the light-emitting auxiliary layer and the electron-blocking layer.
[0162] [p-dopant]
[0163] In addition to the materials described above, the hole transport region may include a charge-generating material to enhance conductivity. The charge-generating material may be uniformly or non-uniformly dispersed within the hole transport region (e.g., in the form of a single layer composed of the charge-generating material).
[0164] The charge-generating material may be, for example, a p-dopant.
[0165] For example, the LUMO energy level of the p-dopant may be about -3.5 eV or less.
[0166] In one embodiment, the p-dopant may include a quinone derivative, a cyano group-containing compound, a compound comprising elements EL1 and EL2, or any combination thereof.
[0167] Examples of quinone derivatives may include TCNQ, F4-TCNQ, etc.
[0168] Examples of cyano group-containing compounds may include HAT-CN, a compound represented by the following chemical formula 221, and the like.
[0169]
[0170] <Chemical Formula 221>
[0171]
[0172] Among the above chemical formula 221,
[0173] R 221 Inland R 223 are independent of each other, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group,
[0174] The above R 221 Inland R 223At least one of which is independently a cyano group; -F; -Cl; -Br; -I; C1-C substituted with a cyano group, -F, -Cl, -Br, -I, or any combination thereof 20 C3-C substituted with an alkyl group; or any combination thereof; 60 Carbocyclic group or C1-C 60 It may be a heterocyclic group.
[0175] Among the compounds containing the above elements EL1 and EL2, the element EL1 may be a metal, a metalloid, or a combination thereof, and the element EL2 may be a non-metal, a metalloid, or a combination thereof.
[0176] Examples of the metals include alkali metals (e.g., lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), etc.); alkaline earth metals (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), etc.); transition metals (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), manganese (Mn), technetium (Tc), rhenium (Re), iron (Fe), ruthenium (Ru), osmium (Os), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni), palladium (Pd), platinum (Pt), copper (Cu), silver (Ag), gold (Au), etc.); It may include post-transition metals (e.g., zinc (Zn), indium (In), tin (Sn), etc.); lanthanide metals (e.g., lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), etc.); etc.
[0177] Examples of the above metalloids may include silicon (Si), antimony (Sb), tellurium (Te), etc.
[0178] Examples of the above non-metals may include oxygen (O), halogens (e.g., F, Cl, Br, I, etc.), etc.
[0179] For example, the compound comprising the elements EL1 and EL2 may include a metal oxide, a metal halide (e.g., a metal fluoride, a metal chloride, a metal bromide, a metal iodide, etc.), a metalloid halide (e.g., a metalloid fluoride, a metalloid chloride, a metalloid bromide, a metalloid iodide, etc.), a metal telluride, or any combination thereof.
[0180] Examples of the above metal oxides may include tungsten oxide (e.g., WO, W2O3, WO2, WO3, W2O5, etc.), vanadium oxide (e.g., VO, V2O3, VO2, V2O5, etc.), molybdenum oxide (MoO, Mo2O3, MoO2, MoO3, Mo2O5, etc.), rhenium oxide (e.g., ReO3, etc.), etc.
[0181] Examples of the above metal halides may include alkali metal halides, alkaline earth metal halides, transition metal halides, post-transition metal halides, lanthanide metal halides, and the like.
[0182] Examples of the alkali metal halides may include LiF, NaF, KF, RbF, CsF, LiCl, NaCl, KCl, RbCl, CsCl, LiBr, NaBr, KBr, RbBr, CsBr, LiI, NaI, KI, RbI, CsI, etc.
[0183] Examples of the above alkaline earth metal halides may include BeF2, MgF2, CaF2, SrF2, BaF2, BeCl2, MgCl2, CaCl2, SrCl2, BaCl2, BeBr2, MgBr2, CaBr2, SrBr2, BaBr2, BeI2, MgI2, CaI2, SrI2, BaI2, etc.
[0184] Examples of the above transition metal halides include titanium halides (e.g., TiF4, TiCl4, TiBr4, TiI4, etc.), zirconium halides (e.g., ZrF4, ZrCl4, ZrBr4, ZrI4, etc.), hafnium halides (e.g., HfF4, HfCl4, HfBr4, HfI4, etc.), vanadium halides (e.g., VF3, VCl3, VBr3, VI3, etc.), niobium halides (e.g., NbF3, NbCl3, NbBr3, NbI3, etc.), tantalum halides (e.g., TaF3, TaCl3, TaBr3, TaI3, etc.), chromium halides (e.g., CrF3, CrCl3, CrBr3, CrI3, etc.), molybdenum halides (e.g., MoF3, MoCl3, MoBr3, MoI3, etc.), Tungsten halides (e.g., WF3, WCl3, WBr3, WI3, etc.), manganese halides (e.g., MnF2, MnCl2, MnBr2, MnI2, etc.), technetium halides (e.g., TcF2, TcCl2, TcBr2, TcI2, etc.), rhenium halides (e.g., ReF2, ReCl2, ReBr2, ReI2, etc.), iron halides (e.g., FeF2, FeCl2, FeBr2, FeI2, etc.), ruthenium halides (e.g., RuF2, RuCl2, RuBr2, RuI2, etc.), osmium halides (e.g., OsF2, OsCl2, OsBr2, OsI2, etc.), cobalt halides (e.g., CoF2, CoCl2, CoBr2, CoI2, etc.), rhodium halides (e.g., RhF2, RhCl2, RhBr2, RhI2, etc.), iridium halides (e.g., IrF2, IrCl2, IrBr2, IrI2, etc.), nickel halides (e.g., NiF2, NiCl2, NiBr2, NiI2, etc.), palladium halides (e.g., PdF2, PdCl2, PdBr2, PdI2, etc.), platinum halides (e.g., PtF2, PtCl2, PtBr2, PtI2, etc.), copper halides (e.g., CuF, CuCl, CuBr, CuI, etc.),It may include silver halides (e.g., AgF, AgCl, AgBr, AgI, etc.), gold halides (e.g., AuF, AuCl, AuBr, AuI, etc.), etc.
[0185] Examples of the above-described post-transition metal halides may include zinc halides (e.g., ZnF2, ZnCl2, ZnBr2, ZnI2, etc.), indium halides (e.g., InI3, etc.), tin halides (e.g., SnI2, etc.), etc.
[0186] Examples of the above lanthanide metal halides may include YbF, YbF2, YbF3, SmF3, YbCl, YbCl2, YbCl3SmCl3, YbBr, YbBr2, YbBr3SmBr3, YbI, YbI2, YbI3, SmI3, etc.
[0187] Examples of the above metalloid halides may include antimony halides (e.g., SbCl5, etc.).
[0188] Examples of the metal tellurides include alkali metal tellurides (e.g., Li2Te, Na2Te, K2Te, Rb2Te, Cs2Te, etc.), alkaline earth metal tellurides (e.g., BeTe, MgTe, CaTe, SrTe, BaTe, etc.), transition metal tellurides (e.g., TiTe2, ZrTe2, HfTe2, V2Te3, Nb2Te3, Ta2Te3, Cr2Te3, Mo2Te3, W2Te3, MnTe, TcTe, ReTe, FeTe, RuTe, OsTe, CoTe, RhTe, IrTe, NiTe, PdTe, PtTe, Cu2Te, CuTe, Ag2Te, AgTe, Au2Te, etc.), post-transition metal tellurides (e.g., ZnTe, etc.), lanthanide metal tellurides (e.g., LaTe, CeTe, PrTe, NdTe, PmTe, EuTe, GdTe, It may include TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, etc.
[0189] [Emissive layer among the middle layer (130)]
[0190] When the light-emitting element (10) is a full-color light-emitting element, the light-emitting layer may be patterned into a red light-emitting layer, a green light-emitting layer, and / or a blue light-emitting layer for each individual subpixel. Alternatively, the light-emitting layer may have a structure in which two or more layers of a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer are laminated in contact with or spaced apart from each other, or a structure in which two or more materials of a red light-emitting material, a green light-emitting material, and a blue light-emitting material are mixed without layer distinction, thereby emitting white light.
[0191] The above light-emitting layer may include a host and a dopant. The dopant may include a phosphorescent dopant, a fluorescent dopant, or any combination thereof.
[0192] The content of the dopant in the above light-emitting layer may be about 0.01 to about 15 parts by weight with respect to 100 parts by weight of the host.
[0193] Alternatively, the light-emitting layer may include the above-described quantum dot complex (hereinafter also referred to as “quantum dot”).
[0194] Meanwhile, the light-emitting layer may include a delayed fluorescent material. The delayed fluorescent material may serve as a host or dopant in the light-emitting layer.
[0195] The thickness of the light-emitting layer may range from about 100 Å to about 1000 Å. For example, the thickness of the light-emitting layer may range from about 200 Å to about 600 Å. When the thickness of the light-emitting layer satisfies any range among the above-described ranges, excellent light-emitting characteristics can be exhibited without a substantial increase in driving voltage.
[0196] [quantum dot]
[0197] The above light-emitting layer may include quantum dots.
[0198] In this specification, a quantum dot refers to a crystal of a semiconductor compound, and may include any material capable of emitting light of various emission wavelengths depending on the size of the crystal. Quantum dots may also emit light of various emission wavelengths by adjusting the element ratio within the quantum dot compound.
[0199] The diameter of the quantum dot may be, for example, about 1 nm to 10 nm.
[0200] The above quantum dots can be synthesized by a wet chemical process, an organometallic chemical vapor deposition process, a molecular beam epitaxy process, or a similar process.
[0201] The above wet chemical process is a method for growing quantum dot particle crystals by mixing an organic solvent and a precursor material. As the crystals grow, the organic solvent naturally acts as a dispersant coordinated to the quantum dot crystal surface and controls the crystal growth. Therefore, the growth of quantum dot particles can be controlled through a simpler and less costly process than vapor deposition methods such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
[0202] The quantum dot may include a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV element or compound; or any combination thereof.
[0203] Examples of the above II-VI group semiconductor compounds include binary compounds such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc.; It may include a four-element compound such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.; or any combination thereof.
[0204] Examples of the III-V group semiconductor compound may include binary compounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, etc.; quaternary compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.; or any combination thereof. In one embodiment, the III-V group semiconductor compound may further include a group II element. Examples of group III-V semiconductor compounds that further include group II elements may include InZnP, InGaZnP, InAlZnP, etc.
[0205] Examples of the III-VI group semiconductor compounds may include binary compounds such as GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2S3, In2Se3, InTe, etc.; ternary compounds such as InGaS3, InGaSe3, etc.; or any combination thereof.
[0206] Examples of the above I-III-VI group semiconductor compounds may include ternary compounds such as AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, etc.; or quaternary compounds such as AgInGaS, AgInGaS2; or any combination thereof.
[0207] Examples of the IV-VI group semiconductor compounds may include binary compounds such as SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.; ternary compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.; quaternary compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, etc.; or any combination thereof.
[0208] The above group IV element or compound may include a single element material such as Si, Ge, etc.; a binary element compound such as SiC, SiGe, etc.; or any combination thereof.
[0209] Each element included in the compound, such as the binary compound, ternary compound, or quaternary compound, may be present in the quantum dot particle at a uniform concentration or a non-uniform concentration.
[0210] In one embodiment, the quantum dot may have a single structure or a core-shell dual structure in which the concentration of each element contained in the quantum dot is uniform. For example, the material contained in the core and the material contained in the shell may be different from each other.
[0211] The shell of the quantum dot may function as a protective layer to maintain semiconductor properties by preventing chemical modification of the core and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or a multilayer. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the core.
[0212] The shell of the quantum dot may include an oxide of a metal, a metalloid, or a nonmetal, a semiconductor compound, or a combination thereof. Examples of the oxide of the metal, metalloid, or nonmetal may include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, or the like; or any combination thereof. Examples of the semiconductor compound may include a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; or any combination thereof, as described herein. For example, the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.
[0213] Quantum dots can have a full width of half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less. For example, quantum dots can have a full width of half maximum (FWHM) of an emission wavelength spectrum of about 40 nm or less. For example, quantum dots can have a full width of half maximum (FWHM) of an emission wavelength spectrum of about 30 nm or less. Color purity or color reproducibility can be improved within any range within this range. Since light emitted by these quantum dots is emitted in all directions, a wide viewing angle can be improved.
[0214] In one embodiment, the shape of the quantum dot may be specifically a spherical, pyramidal, multi-arm, or cubic nanoparticle, nanotube, nanowire, nanofiber, nanoplatelet, or the like.
[0215] By controlling the size of the quantum dots, the energy band gap can be controlled, and thus light of various wavelengths can be obtained from the quantum dot light-emitting layer. Therefore, by using quantum dots of different sizes, a light-emitting device that emits light of various wavelengths can be implemented. Specifically, the size of the quantum dots can be controlled to emit red light, green light, and / or blue light. In addition, the size of the quantum dots can be configured to combine light of various colors to emit white light.
[0216] [Electron transport region in the middle layer (130)]
[0217] The above electron transport region may have a structure consisting of a layer consisting of a single material, a structure consisting of layers including different materials, or a structure including multiple layers including different materials.
[0218] The electron transport region may include a hole blocking layer, an electron transport layer, an electron injection layer, or any combination thereof.
[0219] In one embodiment, the electron transport region may have a structure of an electron transport layer / electron injection layer, or a hole blocking layer / electron transport layer / electron injection layer, etc., each of which is stacked in the order described from the light emitting layer, but the structure of the electron transport region is not limited thereto.
[0220] The electron transport region (e.g., the hole blocking layer or electron transport layer in the electron transport region) comprises at least one π electron-deficient nitrogen-containing C1-C 60 Cyclic group (π electron-deficient nitrogen-containing C1-C 60 It may include metal-free compounds including a cyclic group.
[0221] For example, the electron transport region may include a compound represented by the following chemical formula 601.
[0222] <Chemical Formula 601>
[0223] [Ar 601 ] xe11 -[(L 601 ) xe1 -R 601 ] xe21
[0224] Among the above chemical formula 601,
[0225] Ar 601 , and L 601 are independent of each other, at least one R 10a C3-C substituted or unsubstituted 60 Carbocyclic group or at least one R 10a C1-C substituted or unsubstituted 60 It is a heterocyclic group,
[0226] xe11 is 1, 2 or 3,
[0227] xe1 is 0, 1, 2, 3, 4, or 5,
[0228] R 601 Silver, at least one R 10aC3-C substituted or unsubstituted 60 Carbocyclic group, at least one R 10a C1-C substituted or unsubstituted 60 Heterocyclic group, -Si(Q 601 )(Q 602 )(Q 603 ), -C(=O)(Q 601 ), -S(=O)2(Q 601 ), or -P(=O)(Q 601 )(Q 602 ) and,
[0229] Q above 601 Inland Q 603 are independently identical to those described for Q1 in this specification, and
[0230] xe21 is 1, 2, 3, 4, or 5,
[0231] Above
[0232] Ar 601 , L 601 and R 601 At least one of them, independently of each other, is at least one R 10a π electron-deficient nitrogen-containing C1-C substituted or unsubstituted 60 It could be a cyclic group.
[0233] For example, if xe11 in the above chemical formula 601 is 2 or more, 2 or more Ar 601 can be linked to each other through single bonds.
[0234] As another example, Ar in the above chemical formula 601 601 may be a substituted or unsubstituted anthracene group.
[0235] As another example, the electron transport region may include a compound represented by the following chemical formula 601-1:
[0236] <Chemical Formula 601-1>
[0237]
[0238] Among the above chemical formula 601-1,
[0239] X 614 is N or C(R 614 ) and X 615 is N or C(R 615 ) and X 616 is N or C(R 616 ) and X 614 Inland X 616 At least one of them is N,
[0240] L 611 Inland L 613 are independently of each other, the above L 601 Same as described for
[0241] xe611 to xe613 are independently identical to those described for xe1 above,
[0242] R 611 Inland R 613 are independently of each other, the above R 601 Same as described for
[0243] R 614 Inland R 616 are independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 20 Alkyl group, C1-C 20 an alkoxy group, at least one R 10a C3-C substituted or unsubstituted 60 a carbocyclic group, or at least one R 10a C1-C substituted or unsubstituted 60 It may be a heterocyclic group.
[0244] For example, in the chemical formulas 601 and 601-1, xe1 and xe611 to xe613 may be independently 0, 1, or 2.
[0245] In one embodiment, the electron transport domain may comprise one of the following compounds ET1 to ET45, BCP (2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-Diphenyl-1,10-phenanthroline), Alq3, BAlq, TAZ, NTAZ, or any combination thereof:
[0246]
[0247]
[0248]
[0249]
[0250]
[0251] The thickness of the electron transport region may range from about 100 Å to about 5000 Å. For example, the thickness of the electron transport region may range from about 160 Å to about 4000 Å. When the electron transport region includes a hole blocking layer, an electron transport layer, or any combination thereof, the thickness of the hole blocking layer may range from about 20 Å to about 1000 Å, and the thickness of the electron transport layer may range from about 100 Å to about 1000 Å. For example, the thickness of the hole blocking layer may range from about 30 Å to about 300 Å. For example, the thickness of the electron transport layer may range from about 150 Å to about 500 Å. When the thickness of the hole blocking layer, the electron transport layer, and / or the electron transport region satisfies the ranges described above, satisfactory electron transport characteristics can be obtained without a substantial increase in driving voltage.
[0252] The electron transport region (e.g., the electron transport layer in the electron transport region) may further include a metal-containing material in addition to the material described above.
[0253] The metal-containing material may include an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The metal ion of the alkali metal complex may be a Li ion, a Na ion, a K ion, an Rb ion, or a Cs ion, and the metal ion of the alkaline earth metal complex may be a Be ion, a Mg ion, a Ca ion, a Sr ion, or a Ba ion.
[0254] The ligand coordinated to the metal ion of the alkali metal complex or the metal ion of the alkaline earth metal complex may independently include hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzoimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.
[0255] For example, the metal-containing material may comprise a Li complex. The Li complex may comprise, for example, the following compounds ET-D1 (LiQ) or ET-D2:
[0256]
[0257] The electron transport region may include an electron injection layer that facilitates electron injection from the second electrode (150). The electron injection layer may be in direct contact with the second electrode (150).
[0258] The electron injection layer may have a structure consisting of a layer made of a single material, a structure consisting of a layer including different materials, or a structure having a plurality of layers including different materials.
[0259] The electron injection layer may include an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof.
[0260] The alkali metal may include Li, Na, K, Rb, Cs, or any combination thereof. The alkaline earth metal may include Mg, Ca, Sr, Ba, or any combination thereof. The rare earth metal may include Sc, Y, Ce, Tb, Yb, Gd, or any combination thereof.
[0261] The alkali metal-containing compound, the alkaline earth metal-containing compound and the rare earth metal-containing compound may include an oxide, a halide (e.g., a fluoride, a chloride, a bromide, an iodide, etc.), a telluride, or any combination thereof of the alkali metal, the alkaline earth metal and the rare earth metal, respectively.
[0262] The alkali metal-containing compound may include an alkali metal oxide such as Li2O, Cs2O, K2O, etc., an alkali metal halide such as LiF, NaF, CsF, KF, LiI, NaI, CsI, KI, etc., or any combination thereof. The alkaline earth metal-containing compound may include BaO, SrO, CaO, Ba x Sr 1-x O(x is 0 <x<1를 만족하는 실수임), Ba x Ca 1-xO(x is 0 <x<1를 만족하는 실수임) 등과 같은 알칼리 토금속 산화물을 포함할 수 있다. 상기 희토류 금속-함유 화합물은, YbF3, ScF3, Sc2O3, Y2O3, Ce2O3, GdF3, TbF3, YbI3, ScI3, TbI3, 또는 이의 임의의 조함을 포함할 수 있다. 또는, 상기 희토류 금속-함유 화합물은, 란타나이드 금속 텔루라이드를 포함할 수 있다. 상기 란타나이드 금속 텔루라이드의 예는, LaTe, CeTe, PrTe, NdTe, PmTe, SmTe, EuTe, GdTe, TbTe, DyTe, HoTe, ErTe, TmTe, YbTe, LuTe, La2Te3, Ce2Te3, Pr2Te3, Nd2Te3, Pm2Te3, Sm2Te3, Eu2Te3, Gd2Te3, Tb2Te3, Dy2Te3, Ho2Te3, Er2Te3, Tm2Te3, Yb2Te3, Lu2Te3등을 포함할 수 있다.
[0263] The above alkali metal complex, alkaline earth metal complex and rare earth metal complex may include an alkali metal ion, an alkaline earth metal ion or a rare earth metal ion; and a ligand bonded to the metal ion, for example, hydroxyquinoline, hydroxyisoquinoline, hydroxybenzoquinoline, hydroxyacridine, hydroxyphenanthridine, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxyphenyloxadiazole, hydroxyphenylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzoimidazole, hydroxyphenylbenzothiazole, bipyridine, phenanthroline, cyclopentadiene, or any combination thereof.
[0264] In one embodiment, the electron injection layer may be composed solely of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal-containing compound, an alkaline earth metal-containing compound, a rare earth metal-containing compound, an alkali metal complex, an alkaline earth metal complex, a rare earth metal complex, or any combination thereof as described above, or may further include an organic material (e.g., a compound represented by the chemical formula 601).
[0265] In one embodiment, the electron injection layer consists of an alkali metal-containing compound (e.g., an alkali metal halide); or the electron injection layer may consist of an alkali metal-containing compound (e.g., an alkali metal halide) and an alkali metal, an alkaline earth metal, a rare earth metal, or any combination thereof. For example, the electron injection layer may be a KI:Yb co-deposition layer, a RbI:Yb co-deposition layer, or the like.
[0266] When the electron injection layer further includes an organic material, the alkali metal, alkaline earth metal, rare earth metal, alkali metal-containing compound, alkaline earth metal-containing compound, rare earth metal-containing compound, alkali metal complex, alkaline earth metal complex, rare earth metal complex, or any combination thereof may be uniformly or non-uniformly dispersed in the matrix including the organic material.
[0267] The thickness of the electron injection layer may range from about 1 Å to about 100 Å. For example, the thickness of the electron injection layer may range from about 3 Å to about 90 Å. When the thickness of the electron injection layer satisfies any of the ranges described above, satisfactory electron injection characteristics can be obtained without a substantial increase in driving voltage.
[0268] [Second electrode (150)]
[0269] A second electrode (150) is disposed on the upper portion of the intermediate layer (130) as described above. The second electrode (150) may be a cathode, which is an electron injection electrode. When the second electrode (150) is a cathode, the material for the second electrode (150) may include a material having a low work function, such as a metal, an alloy, an electrically conductive compound, or any combination thereof.
[0270] The second electrode (150) may include lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), ytterbium (Yb), silver-ytterbium (Ag-Yb), ITO, IZO, or any combination thereof. The second electrode (150) may be a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.
[0271] The above second electrode (150) may have a single-layer structure or a multi-layer structure.
[0272] [Capping layer]
[0273] The light emitting element (10) may include a first capping layer on the outside of the first electrode (110) and / or a second capping layer on the outside of the second electrode (150). In one embodiment, the light emitting element (10) may have a structure in which a first capping layer, a first electrode (110), an intermediate layer (130), and a second electrode (150) are sequentially stacked, a structure in which a first electrode (110), an intermediate layer (130), a second electrode (150), and a second capping layer are sequentially stacked, or a structure in which a first capping layer, a first electrode (110), an intermediate layer (130), a second electrode (150), and a second capping layer are sequentially stacked.
[0274] Light generated in the light-emitting layer of the intermediate layer (130) of the light-emitting element (10) can be extracted to the outside through the first electrode (110), which is a transflective electrode or a transmissive electrode, and the first capping layer, and light generated in the light-emitting layer of the intermediate layer (130) of the light-emitting element (10) can be extracted to the outside through the second electrode (150), which is a transflective electrode or a transmissive electrode, and the second capping layer.
[0275] The first capping layer and the second capping layer can each serve to improve external luminous efficiency by the principle of constructive interference. As a result, the light extraction efficiency of the light-emitting element (10) can be increased, thereby improving the luminous efficiency of the light-emitting element (10).
[0276] Each of the first capping layer and the second capping layer may include a material having a refractive index of 1.6 or more (for a wavelength of about 589 nm).
[0277] The first capping layer and the second capping layer may be, independently of each other, an organic capping layer including an organic material, an inorganic capping layer including an inorganic material, or an organic-inorganic composite capping layer including an organic material and an inorganic material.
[0278] At least one of the first capping layer and the second capping layer may, independently of each other, include a carbocyclic compound, a heterocyclic compound, an amine group-containing compound, a porphine derivative, a phthalocyanine derivative, a naphthalocyanine derivative, an alkali metal complex, an alkaline earth metal complex, or any combination thereof. The carbocyclic compound, the heterocyclic compound, and the amine group-containing compound may optionally be substituted with a substituent including O, N, S, Se, Si, F, Cl, Br, I, or any combination thereof. In one embodiment, at least one of the first capping layer and the second capping layer may, independently of each other, include an amine group-containing compound.
[0279] For example, at least one of the first capping layer and the second capping layer may independently include a compound represented by the chemical formula 201, a compound represented by the chemical formula 202, or any combination thereof.
[0280] According to another embodiment, at least one of the first capping layer and the second capping layer may independently comprise one of the compounds HT28 to HT33, one of the compounds CP1 to CP6, β-NPB or any compound thereof:
[0281]
[0282] [Electronic Device]
[0283] The above light-emitting element can be included in various electronic devices. For example, an electronic device including the above light-emitting element can be a light-emitting device, an authentication device, etc.
[0284] The above electronic device (e.g., light-emitting device) may further include, in addition to the light-emitting element, a color filter, a color conversion layer, or a color filter and a color conversion layer. The color filter and / or color conversion layer may be arranged on at least one propagation direction of light emitted from the light-emitting element. For example, the light emitted from the light-emitting element may be blue light or white light. The light-emitting element may be the same as described above.
[0285] The electronic device may include a substrate. The substrate may include a plurality of subpixels, the color filter may include a plurality of color filter regions corresponding to each of the plurality of subpixels, and the color conversion layer may include a plurality of color conversion regions corresponding to each of the plurality of subpixels.
[0286] A pixel defining film is placed between the plurality of subpixels to define each subpixel.
[0287] The color filter may further include a plurality of color filter regions and a light-shielding pattern disposed between the plurality of color filter regions, and the color conversion layer may further include a plurality of color conversion regions and a light-shielding pattern disposed between the plurality of color conversion regions.
[0288] The plurality of color filter regions (or, the plurality of color conversion regions) include a first region emitting a first color light; a second region emitting a second color light; and / or a third region emitting a third color light, and the first color light, the second color light, and / or the third color light may have different maximum emission wavelengths. For example, the first color light may be red light, the second color light may be green light, and the third color light may be blue light. In one embodiment, the plurality of color filter regions (or, the plurality of color conversion regions) may include quantum dots. For example, the first region may include red quantum dots, the second region may include green quantum dots, and the third region may not include quantum dots. Additional descriptions of the quantum dots may be the same as described herein. The first region, the second region, and / or the third region may each further include a scatterer.
[0289] The above regions including quantum dots can be formed using a quantum dot composition including a quantum dot complex according to one embodiment of the present invention.
[0290] In one embodiment, the light-emitting element can emit a first light, the first region can absorb the first light and emit a first-first color light, the second region can absorb the first light and emit a second-first color light, and the third region can absorb the first light and emit a third-first color light. The first-first color light, the second-first color light, and the third-first color light can have different maximum emission wavelengths. For example, the first light can be blue light, the first-first color light can be red light, the second-first color light can be green light, and the third-first color light can be blue light.
[0291] The above electronic device may further include a thin film transistor in addition to the light emitting element as described above. The thin film transistor may include a source electrode, a drain electrode, and an active layer, and one of the source electrode and the drain electrode may be electrically connected to one of the first electrode and the second electrode of the light emitting element.
[0292] The above thin film transistor may further include a gate electrode, a gate insulating film, etc.
[0293] The above active layer may include crystalline silicon, amorphous silicon, an organic semiconductor, an oxide semiconductor, etc.
[0294] The electronic device may further include a sealing member that seals the light-emitting element. The sealing member may be disposed between the color filter and / or color conversion layer and the light-emitting element. The sealing member may allow light from the light-emitting element to be extracted to the outside, while simultaneously blocking external air and moisture from penetrating into the light-emitting element. The sealing member may be a sealing substrate including a transparent glass substrate or a plastic substrate. The sealing member may be a thin film encapsulation layer including one or more organic layers and / or inorganic layers. When the sealing member is a thin film encapsulation layer, the electronic device may be flexible.
[0295] On the above sealing portion, in addition to the color filter and / or color conversion layer, various functional layers may be additionally arranged depending on the purpose of the electronic device. Examples of the functional layers may include a touch screen layer, a polarizing layer, etc. The touch screen layer may be a pressure-sensitive touch screen layer, a capacitive touch screen layer, or an infrared touch screen layer. The authentication device may be, for example, a biometric authentication device that authenticates an individual using biometric information of a living body (e.g., a fingertip, an eye, etc.).
[0296] The above authentication device may further include a biometric information collection means in addition to the light-emitting element described above.
[0297] The above electronic devices can be applied to various displays, light sources, lighting, personal computers (e.g., portable computers), mobile phones, digital cameras, electronic notebooks, electronic dictionaries, electronic game consoles, medical devices (e.g., electronic thermometers, blood pressure monitors, blood glucose meters, pulse rate measuring devices, pulse wave measuring devices, electrocardiogram display devices, ultrasonic diagnostic devices, endoscope display devices), fish finders, various measuring devices, instruments (e.g., instruments for vehicles, aircraft, and ships), projectors, etc.
[0298] [Description of Figures 2 and 3]
[0299] FIG. 2 is a schematic cross-sectional view of an electronic device (180) according to one embodiment of the present invention.
[0300] The electronic device (180) of FIG. 2 includes a substrate (100), a thin film transistor (TFT), a light-emitting element, and a sealing portion (300) that seals the light-emitting element.
[0301] The substrate (100) may be a flexible substrate, a glass substrate, or a metal substrate. A buffer layer (210) may be disposed on the substrate (100). The buffer layer (210) may serve to prevent the penetration of impurities through the substrate (100) and provide a flat surface on the upper portion of the substrate (100).
[0302] A thin film transistor (TFT) may be placed on the buffer layer (210). The thin film transistor (TFT) may include an active layer (220), a gate electrode (240), a source electrode (260), and a drain electrode (270).
[0303] The above active layer (220) may include an inorganic semiconductor such as silicon or polysilicon, an organic semiconductor, or an oxide semiconductor, and includes a source region, a drain region, and a channel region.
[0304] A gate insulating film (230) for insulating the active layer (220) and the gate electrode (240) may be disposed on the upper portion of the active layer (220), and a gate electrode (240) may be disposed on the upper portion of the gate insulating film (230).
[0305] An interlayer insulating film (250) may be placed on the upper portion of the gate electrode (240). The interlayer insulating film (250) is placed between the gate electrode (240) and the source electrode (260) and between the gate electrode (240) and the drain electrode (270) to insulate them.
[0306] A source electrode (260) and a drain electrode (270) may be disposed on the interlayer insulating film (250). The interlayer insulating film (250) and the gate insulating film (230) may be formed so as to expose the source region and the drain region of the active layer (220), and the source electrode (260) and the drain electrode (270) may be disposed so as to be in contact with the exposed portions of the source region and the drain region of the active layer (220), respectively.
[0307] A thin film transistor (TFT) such as this can be electrically connected to a light-emitting element to drive the light-emitting element, and is covered and protected by a passivation layer (280). The passivation layer (280) can include an inorganic insulating film, an organic insulating film, or a combination thereof. A light-emitting element is provided on the passivation layer (280). The light-emitting element includes a first electrode (110), an intermediate layer (130), and a second electrode (150).
[0308] The first electrode (110) may be disposed on a passivation layer (280). The passivation layer (280) may not cover the entire drain electrode (270) and may expose a certain area of the drain electrode (270). The first electrode (110) may be disposed so as to be connected to the exposed area of the drain electrode (270).
[0309] A pixel defining film (290) including an insulating material may be disposed on the first electrode (110). The pixel defining film (290) exposes a predetermined area of the first electrode (110), and an intermediate layer (130) may be formed on the exposed area of the first electrode (110). The pixel defining film (290) may be an organic film of the polyimide or polyacrylic series. Although not shown in FIG. 2, at least some layers of the intermediate layer (130) may extend to the upper portion of the pixel defining film (290) and be provided in the form of a common layer.
[0310] A second electrode (150) is disposed on the above intermediate layer (130), and a capping layer (170) may be further included on the second electrode (150). The capping layer (170) may be formed to cover the second electrode (150).
[0311] An encapsulating member (300) may be disposed on the capping layer (170). The encapsulating member (300) may be disposed on the light-emitting element to protect the light-emitting element from moisture and / or oxygen. The encapsulating member (300) may include an inorganic film including silicon nitride (SiNx), silicon oxide (SiOx), indium tin oxide, indium zinc oxide, or any combination thereof, an organic film including polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyethylene sulfonate, polyoxymethylene, polyarylate, hexamethyldisiloxane, an acrylic resin (e.g., polymethyl methacrylate, polyacrylic acid, etc.), an epoxy resin (e.g., aliphatic glycidyl ether (AGE)), etc.), or any combination thereof, or a combination of an inorganic film and an organic film.
[0312] FIG. 3 is a schematic cross-sectional view of an electronic device (190) according to another embodiment of the present invention.
[0313] The electronic device (190) of FIG. 3 differs from the light-emitting device of FIG. 2 in that it additionally includes a light-shielding pattern (500) and a functional region (400) on the upper portion of the encapsulation portion (300). The functional region (400) may be a color filter region, a color conversion region, or a combination of a color filter region and a color conversion region. At least a portion of the functional region (400) may be formed using a quantum dot composition including a quantum dot complex according to one embodiment of the present invention.
[0314] In one embodiment, the light emitting element included in the electronic device of FIG. 3 may be a tandem light emitting element.
[0315] [Manufacturing method]
[0316] Each layer included in the hole transport region, each layer included in the light emitting layer and each layer included in the electron transport region, etc., can be formed in a selected region using various methods such as vacuum deposition, spin coating, casting, LB (Langmuir-Blodgett), inkjet printing, laser printing, laser induced thermal imaging (LITI), etc.
[0317] The above color filter area, color conversion area, etc. can be formed in a selected area using a spin coating method, a casting method, an inkjet printing method, etc.
[0318] When each layer included in the hole transport region, the light emitting layer and the electron transport region are formed by a vacuum deposition method, the vacuum deposition is performed at a deposition temperature of about 100 to about 500°C, and a pressure of about 10 -8 About 10 -3 It can be performed within a vacuum of 10 torr and a deposition rate range of about 0.01 to about 100 Å / sec, taking into consideration the material to be included in the layer to be formed and the structure of the layer to be formed.
[0319] When forming each layer included in the hole transport region, the light emitting layer, and each layer included in the electron transport region by spin coating, the spin coating can be performed at a coating speed of about 2000 rpm to about 5000 rpm and within a heat treatment temperature range of about 80°C to 200°C, taking into consideration the material to be included in the layer to be formed and the structure of the layer to be formed.
[0320] A quantum dot composition according to one embodiment of the present invention can be used in a solution process such as spin coating or inkjet printing.
[0321] [General definition of substituent]
[0322] C3-C in this specification 60 A carbocyclic group may be a cyclic group having 3 to 60 carbon atoms, consisting solely of carbon atoms as ring-forming atoms. In the present specification, C1-C 60 A heterocyclic group may be a cyclic group having 1 to 60 carbon atoms, which further includes at least one heteroatom as a ring-forming atom in addition to a carbon atom. The C3-C 60 Carbocyclic group and C1-C 60 Each heterocyclic group may be a monocyclic group consisting of one ring or a polycyclic group consisting of two or more rings fused together. For example, the above C1-C 60 The number of ring-forming atoms in the heterocyclic group can be from 3 to 61.
[0323] The cyclic group in this specification is the C3-C 60 Carbocyclic group or C1-C 60 It may be a heterocyclic group.
[0324] π electron-excess C3-C in this specification 60 Cyclic group (π electron-rich C3-C 60cyclic group) may be a cyclic group having 3 to 60 carbon atoms that does not include *-N=*' as a ring-forming moiety. In the present specification, π electron-deficient nitrogen-containing C1-C 60 Cyclic group (πelectron-deficient nitrogen-containing C1-C 60 The cyclic group) may be a heterocyclic group having 1 to 60 carbon atoms including *-N=*' as a ring-forming moiety.
[0325] for example,
[0326] C3-C 60 The carbocyclic group may be a condensed ring group in which a group T1 or two or more groups T1 are condensed with each other (e.g., a cyclopentadiene group, an adamantane group, a norbornane group, a benzene group, a pentalene group, a naphthalene group, an azulene group, an indacene group, an acenaphthylene group, a phenalene group, a phenanthrene group, anthracene group, a fluoranthene group, a triphenylene group, a pyrene group, a chrysene group, a perylene group, a pentaphene group, a heptalene group, a naphthacene group, a picene group, a hexacene group, a pentacene group, a rubicene group, a coronene group, an ovalene group, an indene group, a fluorene group, a spiro-bifluorene group, a benzofluorene group, an indenophenanthrene group, or an indenoanthracene group),
[0327] C1-C 60The heterocyclic group is a group T2, a condensed ring group in which two or more groups T2 are condensed with each other, or a condensed ring group in which one or more groups T2 and one or more groups T1 are condensed with each other (e.g., a pyrrole group, a thiophene group, a furan group, an indole group, a benzoindole group, a naphthoindole group, an isoindole group, a benzoisoindole group, a naphthoisoindole group, a benzosilole group, a benzothiophene group, a benzofuran group, a carbazole group, a dibenzosilole group, a dibenzothiophene group, a dibenzofuran group, an indenocarbazole group, an indolocarbazole group, a benzofurocarbazole group, a benzothienocarbazole group, a benzosilolocarbazole group, a benzoindolocarbazole group, a benzocarbazole group, a benzonaphthofuran group, a benzonaphthothiophene group, a benzonaphthosilole group, Benzofurodibenzofuran group, benzofurodibenzothiophene group, benzothienodibenzothiophene group, pyrazole group, imidazole group, triazole group, oxazole group, isoxazole group, oxadiazole group, thiazole group, isothiazole group, thiadiazole group, benzopyrazole group, benzimidazole group, benzoxazole group, benzoisoxazole group, benzothiazole group, benzisothiazole group, pyridine group, pyrimidine group, pyrazine group, pyridazine group, triazine group, quinoline group, isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthroline group, cinnoline group, phthalazine group, naphthyridine group, imidazopyridine (group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzosilole group, azadibenzothiophene group, azadibenzofuran group, etc.)
[0328] π electron-excess C3-C 60A cyclic group is a group T1, a group in which two or more groups T1 are condensed with each other, a group T3, a group in which two or more groups T3 are condensed with each other, or a group in which one or more groups T3 and one or more groups T1 are condensed with each other (for example, the above C3-C 60 Carbocyclic group, 1H-pyrrole group, silole group, borole group, 2H-pyrrole group, 3H-pyrrole group, thiophene group, furan group, indole group, benzoindole group, naphthoindole group, isoindole group, benzoisoindole group, naphthoisoindole group, benzosilole group, benzothiophene group, benzofuran group, carbazole group, dibenzosilole group, dibenzothiophene group, dibenzofuran group, indenocarbazole group, indolocarbazole group, benzofurocarbazole group, benzothienocarbazole group, benzosilolocarbazole group, benzoindolocarbazole group, benzocarbazole group, benzonaphthofuran group, benzonaphthothiophene group, benzonaphthosilole group, benzofurodibenzofuran group, It can be a benzofurodibenzothiophene group, a benzothienodibenzothiophene group, etc.),
[0329] π electron-deficient nitrogen-containing C1-C 60The cyclic group is i) a group T4, ii) a condensed ring group in which two or more groups T4 are condensed with each other, iii) a condensed ring group in which one or more groups T4 and one or more groups T1 are condensed with each other, iv) a condensed ring group in which one or more groups T4 and one or more groups T3 are condensed with each other, or v) a condensed ring group in which one or more groups T4, one or more groups T1 and one or more groups T3 are condensed with each other (for example, a pyrazole group, an imidazole group, a triazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, a benzopyrazole group, a benzimidazole group, a benzoxazole group, a benzoisoxazole group, a benzothiazole group, a benzoisothiazole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a quinoline group, (Isoquinoline group, benzoquinoline group, benzoisoquinoline group, quinoxaline group, benzoquinoxaline group, quinazoline group, benzoquinazoline group, phenanthroline group, cinnoline group, phthalazine group, naphthyridine group, imidazopyridine group, imidazopyrimidine group, imidazotriazine group, imidazopyrazine group, imidazopyridazine group, azacarbazole group, azafluorene group, azadibenzosilole group, azadibenzothiophene group, azadibenzofuran group, etc.)
[0330] Group T1 is a cyclopropane group, a cyclobutane group, a cyclopentane group, a cyclohexane group, a cycloheptane group, a cyclooctane group, a cyclobutene group, a cyclopentene group, a cyclopentadiene group, a cyclohexene group, a cyclohexadiene group, a cycloheptene group, an adamantane group, a norbornane (or bicyclo[2.2.1]heptane) group, a norbornene group, a bicyclo[1.1.1]pentane group, a bicyclo[2.1.1]hexane group, a bicyclo[2.2.2]octane group, or a benzene group,
[0331] Group T2 is a furan group, a thiophene group, a 1H-pyrrole group, a silole group, a borole group, a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, a tetrazine group, a pyrrolidine group, an imidazolidine group, a dihydropyrrole group, a piperidine group, a tetrahydropyridine group, a dihydropyridine group, a hexahydropyrimidine group, a tetrahydropyrimidine group, a dihydropyrimidine group, a piperazine group, a tetrahydropyrazine group, a dihydropyrazine group, a tetrahydropyridazine group, or a dihydropyridazine group,
[0332] Group T3 is a furan group, a thiophene group, a 1H-pyrrole group, a silole group, or a borole group,
[0333] Group T4 may be a 2H-pyrrole group, a 3H-pyrrole group, an imidazole group, a pyrazole group, a triazole group, a tetrazole group, an oxazole group, an isoxazole group, an oxadiazole group, a thiazole group, an isothiazole group, a thiadiazole group, an azasilole group, an azaborole group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, a triazine group, or a tetrazine group.
[0334] Cyclic group, C3-C in this specification 60 Carbocyclic group, C1-C 60 Heterocyclic group, π electron-excess C3-C 60 Cyclic group and π electron-deficient nitrogen-containing C1-C 60 The term "cyclic group" can be a group, monovalent group or polyvalent group (e.g., divalent group, trivalent group, tetravalent group, etc.) fused to any cyclic group, depending on the structure of the chemical formula in which the term is used. For example, a "benzene group" can be a benzo group, a phenyl group, a phenylene group, etc., which can be easily understood by those skilled in the art, depending on the structure of the chemical formula in which the "benzene group" is included.
[0335] 1st C3-C 60 Carbocyclic group and monovalent C1-C 60 An example of a heterocyclic group is C3-C 10 Cycloalkyl group, C1-C 10 Heterocycloalkyl group, C3-C 10 Cycloalkenyl group, C1-C 10 Heterocycloalkenyl group, C6-C 60 Aryl group, C1-C 60 It may include a heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic heterocondensed polycyclic group. Divalent C3-C 60 Carbocyclic group and divalent C1-C 60 An example of a heterocyclic group is C3-C 10 Cycloalkylene group, C1-C 10 Heterocycloalkylene group, C3-C10 Cycloalkenylene group, C1-C 10 Heterocycloalkenylene group, C6-C 60 Arylene group, C1-C 60 It may include a heteroarylene group, a divalent non-aromatic condensed polycyclic group, and a divalent non-aromatic heterocondensed polycyclic group.
[0336] C1-C in this specification 60 The alkyl group may be a linear or branched aliphatic hydrocarbon monovalent group having 1 to 60 carbon atoms. Specific examples thereof may include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, an isobutyl group, a tert-butyl group, an n-pentyl group, a tert-pentyl group, a neopentyl group, an isopentyl group, a sec-pentyl group, a 3-pentyl group, a sec-isopentyl group, an n-hexyl group, an isohexyl group, a sec-hexyl group, a tert-hexyl group, an n-heptyl group, an isoheptyl group, a sec-heptyl group, a tert-heptyl group, an n-octyl group, an isooctyl group, a sec-octyl group, a tert-octyl group, an n-nonyl group, an isononyl group, a sec-nonyl group, a tert-nonyl group, an n-decyl group, an isodecyl group, a sec-decyl group, a tert-decyl group, etc. In the present specification, C1-C 60 The alkylene group is C1-C 60 It may be a divalent group having the same structure as an alkyl group.
[0337] C2-C in this specification 60 The alkenyl group is C2-C 60 It may be a monovalent hydrocarbon group containing one or more carbon-carbon double bonds in the middle or terminal of an alkyl group, and specific examples thereof may include an ethenyl group, a propenyl group, a butenyl group, etc. In the present specification, C2-C 60 The alkenylene group is C2-C 60 It may be a divalent group having the same structure as an alkenyl group.
[0338] C2-C in this specification 60 The alkynyl group is C2-C 60It may be a monovalent hydrocarbon group containing one or more carbon-carbon triple bonds in the middle or terminal of the alkyl group, and specific examples thereof may include an ethynyl group, a propynyl group, etc. In the present specification, C2-C 60 The alkynylene group is C2-C 60 It may be a divalent group having the same structure as an alkynyl group.
[0339] C1-C in this specification 60 Alkoxy group is -OA 101 (Here, A 101 Silver is the above C1-C 60 It may be a monovalent group having the chemical formula of (alkyl group), and specific examples thereof may include a methoxy group, an ethoxy group, an isopropyloxy group, etc.
[0340] C3-C in this specification 10 A cycloalkyl group may be a monovalent saturated hydrocarbon cyclic group having 3 to 10 carbon atoms, and specific examples thereof may include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, adamantanyl, a norbornanyl group (or a bicyclo[2.2.1]heptyl group), a bicyclo[1.1.1]pentyl group, a bicyclo[2.1.1]hexyl group, a bicyclo[2.2.2]octyl group, etc. In the present specification, C3-C 10 The cycloalkylene group is C3-C 10 It may be a divalent group having the same structure as a cycloalkyl group.
[0341] C1-C in this specification 10A heterocycloalkyl group may be a monovalent cyclic group having 1 to 10 carbon atoms, which further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms. Specific examples thereof include a 1,2,3,4-oxatriazolidinyl group, a tetrahydrofuranyl group, a tetrahydrothiophenyl group, etc. In the present specification, C1-C 10 The heterocycloalkylene group is C1-C 10 It may be a divalent group having the same structure as a heterocycloalkyl group.
[0342] C3-C in this specification 10 A cycloalkenyl group is a monovalent cyclic group having 3 to 10 carbon atoms, having at least one carbon-carbon double bond within the cyclic structure, and may be a group without aromaticity. Specific examples thereof may include a cyclopentenyl group, a cyclohexenyl group, a cycloheptenyl group, etc. In the present specification, C3-C 10 The cycloalkenylene group is C3-C 10 It may be a divalent group having the same structure as a cycloalkenyl group.
[0343] C1-C in this specification 10 A heterocycloalkenyl group is a monovalent cyclic group having 1 to 10 carbon atoms, which further includes at least one heteroatom as a ring-forming atom in addition to carbon atoms, and has at least one double bond within the cyclic structure. The C1-C 10 Specific examples of the heterocycloalkenyl group may include a 4,5-dihydro-1,2,3,4-oxatriazolyl group, a 2,3-dihydrofuranyl group, a 2,3-dihydrothiophenyl group, etc. In the present specification, C1-C 10 The heterocycloalkenylene group is C1-C 10 It may be a divalent group having the same structure as a heterocycloalkenyl group.
[0344] C6-C in this specification 60The aryl group may be a monovalent group having a carbocyclic aromatic system of 6 to 60 carbon atoms, C6-C 60 The arylene group may be a divalent group having a carbocyclic aromatic system of 6 to 60 carbon atoms. The C6-C 60 Specific examples of aryl groups may include a phenyl group, a pentalenyl group, a naphthyl group, an azulenyl group, an indacenyl group, an acenaphthyl group, a phenalenyl group, a phenanthrenyl group, anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a perylenyl group, a pentaphenyl group, a heptalenyl group, a naphthacenyl group, a picenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, etc. The above C6-C 60 Aryl group and C6-C 60 When the arylene group includes two or more rings, the two or more rings can be condensed with each other.
[0345] C1-C in this specification 60 A heteroaryl group may be a monovalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms and further comprising at least one heteroatom as a ring-forming atom in addition to carbon atoms. C1-C 60 A heteroarylene group may be a divalent group having a heterocyclic aromatic system having 1 to 60 carbon atoms and further including at least one heteroatom as a ring-forming atom in addition to carbon atoms. The C1-C 60 Specific examples of heteroaryl groups may include a pyridinyl group, a pyrimidinyl group, a pyrazinyl group, a pyridazinyl group, a triazinyl group, a quinolinyl group, a benzoquinolinyl group, an isoquinolinyl group, a benzoisoquinolinyl group, a quinoxalinyl group, a benzoquinoxalinyl group, a quinazolinyl group, a benzoquinazolinyl group, a cinnolinyl group, a phenanthrolinyl group, a phthalazinyl group, a naphthyridinyl group, etc. The above C1-C 60 Heteroaryl group and C1-C 60 When a heteroarylene group contains two or more rings, the two or more rings can be fused with each other.
[0346] In the present specification, a monovalent non-aromatic condensed polycyclic group may be a monovalent group (for example, having 8 to 60 carbon atoms) in which two or more rings are condensed with each other, contain only carbon as a ring-forming atom, and have non-aromaticity as a molecule as a whole. Specific examples of the monovalent non-aromatic condensed polycyclic group may include an indenyl group, a fluorenyl group, a spiro-bifluorenyl group, a benzofluorenyl group, an indenophenanthrenyl group, an indenoanthracenyl group, etc. In the present specification, a divalent non-aromatic condensed polycyclic group may be a divalent group having the same structure as the monovalent non-aromatic condensed polycyclic group.
[0347] In the present specification, a monovalent non-aromatic condensed heteropolycyclic group may be a monovalent group (e.g., having 1 to 60 carbon atoms) in which two or more rings are condensed with each other, and which further includes at least one heteroatom as a ring-forming atom in addition to a carbon atom, and in which the entire molecule is non-aromatic. Specific examples of the above monovalent non-aromatic heterocondensed polycyclic group include a pyrrolyl group, a thiophenyl group, a furanyl group, an indolyl group, a benzoindolyl group, a naphthoindolyl group, an isoindolyl group, a benzoisoindolyl group, a naphthoisoindolyl group, a benzosilolyl group, a benzothiophenyl group, a benzofuranyl group, a carbazolyl group, a dibenzosilolyl group, a dibenzothiophenyl group, a dibenzofuranyl group, an azacarbazolyl group, an azafluorenyl group, an azadibenzosilolyl group, an azadibenzothiophenyl group, an azadibenzofuranyl group, a pyrazolyl group, an imidazolyl group, a triazolyl group, a tetrazolyl group, an oxazolyl group, an isooxazolyl group, a thiazolyl group, an isothiazolyl group, an oxadiazolyl group, Thiadiazolyl group, benzopyrazolyl group, benzimidazolyl group, benzoxazolyl group, benzothiazolyl group, benzoxadiazolyl group, benzothiadiazolyl group, imidazopyridinyl group, imidazopyrimidinyl group, imidazotriazinyl group, imidazopyrazinyl group, imidazopyridazinyl group, indenocarbazolyl group, indolocarbazolyl group, benzofurocarbazolyl group, benzothienocarbazolyl group, benzosilolocarbazolyl group, benzoindolocarbazolyl group, benzocarbazolyl group, benzonaphthofuranyl group, benzonaphthothiophenyl group, benzonaphthosilolyl group, benzofurodibenzofuranyl group, benzofurodibenzothiophenyl group, benzothienodibenzothiophenyl group, etc. may be included. In the present specification, the divalent non-aromatic heterocondensed polycyclic group may be a divalent group having the same structure as the monovalent non-aromatic heterocondensed polycyclic group.
[0348] C6-C in this specification 60 Aryloxy group is -OA 102 (Here, A 102 is the above C6-C 60 It may be a group represented by (which may be an aryl group), and the above C6-C60 Arylthio is -SA 103 (Here, A 103 Silver is the C6-C 60 It can be a group represented by (which may be an aryl group).
[0349] C7-C in this specification 60 Arylalkyl group is -A 104 A 105 (Here, A 104 is C1-C 54 It is an alkylene group, and A 105 is C6-C 59 It may be a group represented by (which may be an aryl group), and in the present specification, C2-C 60 Heteroarylalkyl group is -A 106 A 107 (Here, A 106 Silver C1-C 59 It is an alkylene group, and A 107 Silver C1-C 59 It may be a group represented by (which may be a heteroaryl group).
[0350] In this specification, "R 10a "Is,
[0351] deuterium (-D), -F, -Cl, -Br, -I, hydroxyl group, cyano group, or nitro group;
[0352] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, C2-C 60 Heteroarylalkyl group, -Si(Q 11 )(Q 12 )(Q 13 ), -N(Q 11 )(Q 12 ), -B(Q 11 )(Q 12 ), -C(=O)(Q 11 ), -S(=O)2(Q 11), -P(=O)(Q 11 )(Q 12 ), or any combination thereof, substituted or unsubstituted, C1-C 60 Alkyl group, C2-C 60 Alkenyl group, C2-C 60 alkynyl group, or C1-C 60 alkoxy group;
[0353] Deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, nitro group, C1-C 60 Alkyl group, C2-C 60 Alkenyl group, C2-C 60 Alkynyl group, C1-C 60 Alkoxy group, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, C2-C 60 Heteroarylalkyl group, -Si(Q 21 )(Q 22 )(Q 23 ), -N(Q 21 )(Q 22 ), -B(Q 21 )(Q 22 ), -C(=O)(Q 21 ), -S(=O)2(Q 21 ), -P(=O)(Q 21 )(Q 22 ), or any combination thereof, substituted or unsubstituted, C3-C 60 Carbocyclic group, C1-C 60 Heterocyclic group, C6-C 60 Aryloxy group, C6-C 60 Arylthio group, C7-C 60 Arylalkyl group, or C2-C 60 Heteroarylalkyl group; or
[0354] -Si(Q 31 )(Q 32 )(Q 33 ), -N(Q 31 )(Q 32 ), -B(Q31 )(Q 32 ), -C(=O)(Q 31 ), -S(=O)2(Q 31 ), or -P(=O)(Q 31 )(Q 32 );
[0355] It could be.
[0356] Q1 to Q3, Q in this specification 11 Inland Q 13 , Q 21 Inland Q 23 and Q 31 Inland Q 33 are independently of each other, hydrogen; deuterium; -F; -Cl; -Br; -I; hydroxyl group; cyano group; nitro group; C1-C 60 Alkyl group; C2-C 60 Alkenyl group; C2-C 60 Alkynyl group; C1-C 60 Alkoxy group; or deuterium, -F, cyano group, C1-C 60 Alkyl group, C1-C 60 C3-C, substituted or unsubstituted with an alkoxy group, a phenyl group, a biphenyl group, or any combination thereof 60 Carbocyclic group; C1-C 60 Heterocyclic group; C7-C 60 Arylalkyl group; or C2-C 60 Heteroarylalkyl group; may be.
[0357] In the present specification, a heteroatom may be any atom other than a carbon atom. Examples of the heteroatom may include O, S, N, P, Si, B, Ge, Se, and any combination thereof.
[0358] In the present specification, the third-row transition metal may include hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), or gold (Au).
[0359] In this specification, "Ph" refers to a phenyl group, "Me" refers to a methyl group, "Et" refers to an ethyl group, and "ter-Bu" or "Bu t " refers to a tert-butyl group, and "OMe" refers to a methoxy group.
[0360] In this specification, the "biphenyl group" may be a "phenyl group substituted with a phenyl group." For example, the "biphenyl group" may be a group in which the substituent is "C6-C 60 It may be a substituted phenyl group that is an "aryl group".
[0361] In this specification, "terphenyl group" may be "phenyl group substituted with a biphenyl group." The "terphenyl group" may be a group in which the substituent is "C6-C 60 C6-C substituted with aryl group 60 It may be a “substituted phenyl group” which is an “aryl group”.
[0362] The maximum number of carbon atoms in the above substituent definitions is exemplary. For example, C1-C 60 The maximum number of carbon atoms in the definition of an alkyl group is 60, and the definition of an alkyl group is C1-C 20 The same can be applied to alkyl groups. The same can be said for other cases.
[0363] In this specification, * and *' each mean a bonding site with an adjacent atom in the chemical formula, unless otherwise defined.
[0364] Hereinafter, compounds and light-emitting devices according to one embodiment of the present invention will be described in more detail by way of examples.
[0365] [Example]
[0366] Test Example 1 (native ligand)
[0367] CuI, GaI3, and InI3 were added to a 3-neck flask in a molar ratio of 2:5:4, and oleylamine (OLA) and trioctylamine (TOA), which would be used as a solvent and ligand, were added in a ratio of 1:1 and stirred (first solution). The first solution was degassed under vacuum conditions at 120°C for 30 minutes. Separately, a 1 M precursor solution (S-OLA solution) was prepared by dissolving sulfur (S) powder in oleylamine (OLA). The prepared S-OLA solution was injected into the first solution under N2 conditions at 120°C. At this time, the total injected amount of the S precursor was 3 times the Ga ratio. The temperature of the mixed solution was raised to 230°C and reacted for 2 hours to synthesize a CIGS core.
[0368] At 120°C and under a N2 atmosphere, zinc oleate (ZnOA) solution and TOP-S solution dissolved in TOA were injected into the synthesized CIGS core at a ratio of 1.5 times that of the group III element (In+Ga) added to the CIGS core synthesis. The temperature was raised to 260°C and the reaction was performed for 1 hour. Afterwards, the quantum dot surface was post-treated with dodecanethiol (DDT) and trioctylphosphine (TOP) solutions, and the reaction was terminated. Afterwards, ethanol was added to the CIGS / ZnS quantum dot solution and centrifuged at 9000 rpm. The centrifuged quantum dots were dispersed in toluene, ethanol was added again, and the centrifugation process was performed once more, and then dried and dissolved in cyclohexyl acetate (CHA).
[0369] Test Example 2 (Ligand Exchange)
[0370] The CIGS quantum dot solution (1.0 g in 2.36 mL of cyclohexyl acetate) synthesized in Experimental Example 1 and coordinated with oleic acid as a native ligand was mixed with the compound MAS (0.23 g, 1 mmol) under a nitrogen atmosphere at 80°C and stirred vigorously for 3.5 hours to perform ligand exchange. Subsequently, hexane in an amount 10 times the weight of the solution was added to the quantum dot solution, and the precipitate obtained by centrifugation (9500 rpm for 3 minutes) was vacuum-dried to obtain a quantum dot complex.
[0371] Test Examples 3 to 7 (ligand exchange)
[0372] Quantum dot complexes were obtained using the same method as in Experimental Example 1, except that compounds L1 to L5 were used in the amounts shown in Table 1 (corresponding to 1 mmol) instead of 0.23 g of compound MAS as the ligand exchange compound.
[0373] In order to evaluate the light resistance, the photoconversion efficiency (PCE) over time was measured for the quantum dot composites of Test Examples 1 to 7, and the results are shown in Table 1 and Fig. 4. The photoconversion efficiency (PCE) was measured at a 460 nm light source on samples measuring 20 mm x 20 mm using Otsuka Electronics QE-2100 equipment. The photoconversion efficiency (PCE) was expressed as a percentage based on the PCE when the light source began to irradiate the quantum dot layer (0 hr).
[0374]
[0375]
[0376]
[0377]
[0378] Referring to Table 1 and Fig. 4, the decrease in the photoconversion efficiency of the quantum dot complex with time was the greatest in Test Examples 6 and 7 using compounds L4 and L5 as ligand exchange materials.
[0379] Example 1
[0380] The CIGS / ZnS quantum dot solution (1.0 g in 2.36 mL of cyclohexyl acetate) synthesized in Experimental Example 1 and coordinated with oleic acid as a native ligand was mixed with compound MAS (0.23 g, 1 mmol) at 80°C under a nitrogen atmosphere and stirred vigorously for 3.5 hours to perform the first ligand exchange. To the quantum dot solution where the first ligand exchange was completed, compound L1 (0.25 g, 0.7 mmol) was added at 80°C under a nitrogen atmosphere and stirred vigorously for 3.5 hours to perform the second ligand exchange. Subsequently, hexane in an amount 10 times the weight of the solution was added to the quantum dot solution, and the precipitate obtained by centrifugation (9500 rpm for 3 minutes) was vacuum-dried to obtain a quantum dot complex.
[0381] Example 2
[0382] A quantum dot complex was obtained by the same method as in Example 1, except that compound L2 (0.22 g, 0.7 mmol) was used instead of compound L1.
[0383] Example 3
[0384] A quantum dot complex was obtained by the same method as in Example 1, except that compound L3 (0.28 g, 0.7 mmol) was used instead of compound L1.
[0385] Comparative Example 1
[0386] A quantum dot complex was obtained by the same method as in Test Example 1, and ligand exchange was not performed.
[0387] Comparative Example 2
[0388] A quantum dot complex was obtained by the same method as in Example 1, except that compound L4 (0.28 g, 0.7 mmol) was used instead of compound L1.
[0389] Comparative Example 3
[0390] A quantum dot complex was obtained by the same method as in Example 1, except that compound L5 (0.31 g, 0.7 mmol) was used instead of compound L1.
[0391] In order to evaluate light resistance, the photoconversion efficiency (PCE) over time was measured for the quantum dot complexes of Examples 1 to 3 and Comparative Examples 1 to 3 using the method described above, and the results are shown in Table 2 and Fig. 5.
[0392]
[0393] Referring to Table 2 and FIG. 5, the decrease in the photoconversion efficiency of the quantum dot complexes of Examples 1 to 3 over time is lower than the decrease in the photoconversion efficiency of the quantum dot complexes of Comparative Examples 1 to 3 over time. From this, it can be seen that using compounds L1 to L3 as a two-coordinate ligand (secondary ligand) is more advantageous in improving the light resistance of the quantum dot layer than using compounds L4 or L5.
[0394] Example 4
[0395] A quantum dot complex was obtained by the same method as in Example 1, except that compound L1 (0.13 g, 0.37 mmol) was used instead of compound L1.
[0396] Example 5
[0397] A quantum dot complex was obtained by the same method as in Example 1, except that compound L2 (0.11 g, 0.35 mmol) was used instead of compound L1.
[0398] Example 6
[0399] A quantum dot complex was obtained by the same method as in Example 1, except that compound L3 (0.14 g, 0.35 mmol) was used instead of compound L1.
[0400] Comparative Example 4
[0401] A quantum dot complex was obtained by the same method as in Example 1, except that compound L1 (0.38 g, 1 mmol) was used instead of compound L1.
[0402] Comparative Example 5
[0403] A quantum dot complex was obtained by the same method as in Example 1, except that compound L2 (0.33 g, 1 mmol) was used instead of compound L1.
[0404] Comparative Example 6
[0405] A quantum dot complex was obtained by the same method as in Example 1, except that compound L3 (0.42 g, 1 mmol) was used instead of compound L1.
[0406] In order to evaluate light resistance, the photoconversion efficiency (PCE) over time was measured for the quantum dot complexes of Examples 4 to 6 and Comparative Examples 4 to 6 using the method described above, and the results are shown in Table 3 and Fig. 6.
[0407]
[0408] Referring to Table 3 and FIG. 4, the decrease in the photoconversion efficiency of the quantum dot complexes of Comparative Examples 4 to 6 over time is lower than the decrease in the photoconversion efficiency of the quantum dot complexes of Examples 4 to 6 over time.
[0409] thermogravimetric analysis (TGA)
[0410] Thermogravimetric analysis was performed on the CIGS quantum dot composites obtained in Test Examples 1 and 4, Examples 2 and 5, and Comparative Example 5. Fig. 7 is a thermogravimetric analysis graph for the CIGS quantum dot composites obtained in Test Examples 1 and 4, Examples 2 and 5, and Comparative Example 5. Referring to Fig. 7, in the thermogravimetric analysis, the organic ligand accounted for about 30 to about 34 wt% with respect to 100 wt% of the total weight of the CIGS quantum dot composites obtained in Test Examples 1 and 4, Examples 2 and 5, and Comparative Example 5.
[0411] In thermogravimetric analysis, it was confirmed that the weight ratio of the combined weight of the MAS ligand and the compound L2 ligand to the weight of the native ligand in the CIGS quantum dot composites of Examples 2, 5, and Comparative Example 5 was 77:23, 62:38, and 86:14, respectively, and that the weight ratio of the compound L2 to the weight of the native ligand in the CIGS quantum dot composite of Test Example 4 was about 81:19.
Claims
1. Quantum dots; and Each of the first ligand and the second ligand comprising a first ligand and a second ligand coordinating the quantum dot surface, The above first ligand is a bidentate ligand in the form of a chain containing an ethylene glycol group (-OCH2CH2O-), A quantum dot complex, wherein the second ligand is a ligand containing an acryloyl group (CH2=CHC(=O)-) and an ethylene glycol group.
2. In paragraph 1, The above first ligand is a quantum dot complex represented by the following chemical formula 1: <Chemical formula 1> In the above chemical formula 1, R1 is a C1-C2 alkyl group, R2 is independently hydrogen or a C1-C2 alkyl group, a1 is one of the integers 2 to 4, a2 is one of the integers 0 to 3, a3 is one of the integers 1 or 2.
3. In paragraph 2, A quantum dot complex wherein R1 is a methyl group and R2 is independently hydrogen or a methyl group.
4. In paragraph 2, A quantum dot complex where R1 is a methyl group and R2 is hydrogen.
5. In paragraph 2, Quantum dot complex, where R1 and R2 are methyl groups.
6. In paragraph 2, a1 is 2 or 3, quantum dot complex.
7. In paragraph 2, Quantum dot complex where a2 is 3 and a3 is 1.
8. In paragraph 1, The first ligand is a quantum dot complex selected from the following compounds:
9. In paragraph 1, A quantum dot complex, wherein the second ligand further includes a carboxylate group (-C(=O)OH) group, and the second ligand is coordinated to the surface of the quantum dot by the carboxylate group.
10. In paragraph 1, The second ligand comprises a quantum dot complex comprising the following compound:
11. In paragraph 1, A quantum dot complex, wherein the total content of the first ligand and the second ligand is in a range of 15 to 25 weight % relative to the total weight of the quantum dot complex.
12. In paragraph 1, A quantum dot complex, wherein the molar ratio of the first ligand to the second ligand is in the range of 0.3:1 to 0.8:
1.
13. In paragraph 1, The quantum dot is a quantum dot composite comprising a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV element or compound; or any combination thereof.
14. In paragraph 1, A quantum dot complex comprising a core and a shell covering the core.
15. In paragraph 1, The above quantum dot is a quantum dot composite including a CIGS (copper indium gallium sulfide) core and a ZnS shell.
16. A quantum dot composition comprising a quantum dot complex according to any one of claims 1 to 15 and a solvent.
17. An electronic device comprising a quantum dot complex according to any one of claims 1 to 15.
18. In paragraph 17, An electronic device further comprising a color filter and / or a color conversion layer, wherein the color filter and / or the color conversion layer comprises the quantum dot composite.
19. In Article 18, Including more light sources, An electronic device, wherein the light source is a light-emitting device including a first electrode; a second electrode facing the first electrode; and a light-emitting layer between the first electrode and the second electrode.
20. An electronic device including an electronic component of Article 19, The electronic device is a flat panel display, a curved display, a computer monitor, a medical monitor, a television, a billboard, an indoor lighting, an outdoor lighting, a signal light, a head-up display, a fully transparent display, a partially transparent display, a flexible display, a rollable display, a foldable display, a stretchable display, a laser printer, a telephone, a mobile phone, a tablet computer, a phablet, a personal digital assistant (PDA), a wearable device, a laptop computer, a digital camera, a camcorder, a viewfinder, a micro display, a 3D display, a virtual reality display, an augmented reality display, a vehicle, a video wall including multiple displays tiled together, a theater or stadium screen, a light therapy device, or a signage.
Citation Information
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