Semiconductor package, semiconductor device, and method for manufacturing semiconductor package

Abstract

The present invention alleviates stress in a semiconductor package in which a chip is connected to a substrate by wire bonding.　A semiconductor package includes a substrate, a semiconductor chip, a sealing material, an adhesive layer, and a transparent member. In the semiconductor package, the semiconductor chip is electrically connected to the substrate by a wire. The sealing material seals the wire. Further, in the semiconductor package, the thickness of the adhesive layer is not less than 1 / 10 of the thickness of the substrate. Furthermore, the transparent member is bonded to the sealing material by the adhesive layer.

Description

Semiconductor package, semiconductor device, and method for manufacturing semiconductor package

[0001] The present technology relates to a semiconductor package, and more particularly to a semiconductor package in which connections are made by wire bonding, a semiconductor device, and a method for manufacturing the semiconductor package.

[0002] Conventionally, wire bonding has been widely used to connect a semiconductor substrate and a semiconductor chip because of its low cost and high degree of flexibility. For example, a manufacturing method has been proposed in which a sealing resin that seals the wires of a large number of wire-bonded chips is molded in one batch, the sealing resin is bonded to glass, and then the chips are separated into individual chips (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2003-332542

[0004] The above-mentioned conventional technology facilitates mass production of semiconductor packages by molding a large number of chips with encapsulating resin and then dividing them into individual chips. However, the above-mentioned conventional technology has the risk of stress being generated in the components due to mismatches in the linear expansion coefficients of the substrate, chips, and glass. This stress can cause the glass to peel off from the encapsulant or cracks to form in the encapsulant or glass.

[0005] This technology was developed in light of these circumstances, and aims to relieve stress in semiconductor packages in which a chip is connected to a substrate by wire bonding.

[0006] The present technology has been made to solve the above-mentioned problems, and a first aspect thereof is a semiconductor package including a substrate, a semiconductor chip electrically connected to the substrate by a wire, a sealant for sealing the wire, an adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate, and a transparent member bonded to the sealant by the adhesive layer, and a manufacturing method thereof, which provides the effect of alleviating stress.

[0007] In the first aspect, the adhesive layer may be black, which has the effect of suppressing flare.

[0008] In the first aspect, the material of the adhesive layer may be an epoxy resin, which has the effect of suppressing warpage.

[0009] In the first aspect, the adhesive layer may be made of a silicone resin, which can suppress clouding and condensation.

[0010] In the first aspect, the adhesive layer may contain a plurality of resins having different properties, thereby providing a function of enabling the realization of a plurality of effects.

[0011] In the first aspect, the adhesive layer may contain an epoxy resin and a silicone resin, thereby achieving the effect of suppressing warping while also suppressing clouding and condensation.

[0012] In the first aspect, the semiconductor chip may include a first and a second semiconductor chip, thereby reducing the number of manufacturing processes.

[0013] In this first aspect, the thickness of the adhesive layer may be not less than 30 micrometers, which provides the effect of alleviating stress.

[0014] In this first aspect, the thickness of the adhesive layer may be no more than 400 micrometers, thereby reducing the risk of watermarks.

[0015] In the first aspect, a part of the adhesive layer may extend inward beyond the inner wall of the sealing material, thereby providing the effect of suppressing flare.

[0016] In this first aspect, the adhesive layer and the adhesive surface of the transparent member may have a size in a predetermined direction parallel to the substrate within a range of 100 micrometers to 1000 micrometers, thereby ensuring airtightness.

[0017] In the first aspect, the adhesive layer may have a modulus of elasticity lower than that of the sealing material, thereby providing an effect of alleviating stress.

[0018] In this first aspect, the adhesive layer may have a modulus of elasticity not exceeding 3 gigapascals, thereby providing the effect of alleviating stress.

[0019] In the first aspect, the distance between the semiconductor chip and the transparent member may be in the range of 30 micrometers to 300 micrometers, thereby providing the effect of suppressing flare.

[0020] A second aspect of the present technology is a semiconductor device including a semiconductor package including a substrate, a semiconductor chip electrically connected to the substrate by a wire, a sealing material for sealing the wire, an adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate, and a transparent member bonded to the sealing material by the adhesive layer, and a lens group for condensing incident light and directing it to the semiconductor chip, thereby providing an effect of reducing stress.

[0021] 1 is a block diagram showing a configuration example of a semiconductor device according to a first embodiment of the present technology. FIG. 2 is a cross-sectional view and a top view showing a configuration example of a semiconductor package according to the first embodiment of the present technology. FIG. 3 is a top view of a semiconductor package when silicone is used according to the first embodiment of the present technology. FIG. 4 is a diagram for explaining a manufacturing method of a semiconductor package up to peeling off a film according to the first embodiment of the present technology. FIG. 5 is a diagram for explaining a manufacturing method of a semiconductor package up to forming an external connection terminal according to the first embodiment of the present technology. FIG. 6 is a flowchart showing an example of a manufacturing method of a semiconductor package according to the first embodiment of the present technology. FIG. 7 is a graph showing an example of a relationship between a thickness of an adhesive layer and a pressing amount according to the first embodiment of the present technology. FIG. 8 is a cross-sectional view showing a configuration example of a semiconductor package according to a second embodiment of the present technology. FIG. 9 is a cross-sectional view and a top view showing a configuration example of a semiconductor package according to a third embodiment of the present technology. FIG. 10 is a diagram showing an example of properties of a resin used in an adhesive layer according to the third embodiment of the present technology. FIG. 11 is a cross-sectional view showing a configuration example of a semiconductor package according to a fourth embodiment of the present technology. FIG. 12 is a block diagram showing an example of a schematic configuration of a vehicle control system. FIG. 13 is an explanatory diagram showing an example of installation positions of an outside vehicle information detection unit and an imaging unit.

[0022] Hereinafter, modes for carrying out the present technology (hereinafter referred to as embodiments) will be described. The descriptions will be given in the following order: 1. First embodiment (an example in which the thickness of the adhesive layer is 1 / 10 or more of the substrate) 2. Second embodiment (an example in which the thickness of the black adhesive layer is 1 / 10 or more of the substrate) 3. Third embodiment (an example in which the thickness of the adhesive layer containing multiple resins is 1 / 10 or more of the substrate) 4. Fourth embodiment (an example in which the thickness of the adhesive layer is 1 / 10 or more of the substrate and multiple chips are sealed) 5. Example of application to a moving body

[0023] 1 is a block diagram showing a configuration example of a semiconductor device 100 according to a first embodiment of the present technology. The semiconductor device 100 is a device for capturing image data, and includes a lens group 110, a sensor chip 230, and a DSP (Digital Signal Processing) circuit 120. The semiconductor device 100 further includes a display unit 130, an operation unit 140, a bus 150, a frame memory 160, a storage unit 170, and a power supply unit 180. The semiconductor device 100 is expected to be a camera mounted on a smartphone, an in-vehicle camera, or the like.

[0024] The lens group 110 collects incident light and guides it to the sensor chip 230. The sensor chip 230 has the function of a solid-state image sensor and generates image data by photoelectric conversion. The sensor chip 230 supplies the generated image data to the DSP circuit 120 via a signal line 239.

[0025] The DSP circuit 120 performs predetermined signal processing on the image data, and outputs the processed image data to a frame memory 160 or the like via a bus 150.

[0026] The display unit 130 displays image data. For example, a liquid crystal panel or an organic EL (Electro Luminescence) panel is assumed as the display unit 130. The operation unit 140 generates an operation signal in accordance with a user's operation.

[0027] The bus 150 is a common path for the sensor chip 230, DSP circuit 120, display unit 130, operation unit 140, frame memory 160, storage unit 170, and power supply unit 180 to exchange data with one another.

[0028] The frame memory 160 holds image data. The storage unit 170 stores various data such as image data. The power supply unit 180 supplies power to the sensor chip 230, the DSP circuit 120, the display unit 130, etc.

[0029] In the semiconductor device 100 having the configuration illustrated in the figure, the sensor chip 230 is disposed in a semiconductor package, which will be described later.

[0030] 2A and 2B are a cross-sectional view and a top view showing a configuration example of a semiconductor package 200 according to the first embodiment of the present technology. In the drawing, "a" shows an example of a cross-sectional view of the semiconductor package 200, and "b" shows an example of a top view of the semiconductor package 200.

[0031] As illustrated in FIG. 1A, the semiconductor package 200 includes a transparent member 210, a sensor chip 230, and an organic substrate 250. Hereinafter, the direction toward the lens group 110 (not shown) will be referred to as the "up" direction.

[0032] The axis perpendicular to the substrate plane of the organic substrate 250 (in other words, the optical axis) is defined as the "Z axis." A predetermined direction parallel to the substrate plane is defined as the "X axis," and an axis perpendicular to the X axis and Z axis is defined as the "Y axis." In the figure, "a" is a cross-sectional view seen from the Y axis direction.

[0033] The area of ​​the organic substrate 250 is larger than the area of ​​the sensor chip 230, and the sensor chip 230 is attached to a predetermined region of the upper surface of the organic substrate 250. A predetermined number of pads 251 are arranged around the predetermined region. A predetermined number of external connection terminals 262 (solder balls, etc.) are arranged on the lower surface of the organic substrate 250. The organic substrate 250 is an example of a substrate as defined in the claims.

[0034] The sensor chip 230 functions as a solid-state imaging element and generates image data through photoelectric conversion. A predetermined number of pads 233 are arranged around a predetermined light receiving area 231 on the surface of the sensor chip 230. These pads 233 are electrically connected to pads 251 on the substrate side by wires 261.

[0035] The sealing material 240 seals the wires 261. For example, epoxy resin is used as the material of the sealing material 240. For example, the sealing material 240 is formed in a region between the outer periphery of the organic substrate 250 and the outer periphery of the light receiving region 231 on the upper surfaces of the organic substrate 250 and the sensor chip 230.

[0036] The adhesive layer 220 bonds the sealing material 240 and the transparent member 210. The size (in other words, thickness) of the adhesive layer 220 in the Z-axis direction, dZ １ is the thickness of the organic substrate 250, dZ ３ By making the thickness of the adhesive layer 220 at least 1 / 10 of that of the organic substrate 250, it is possible to sufficiently alleviate stress caused by mismatches in the linear expansion coefficients of the organic substrate 250, the sensor chip 230, and the transparent member 210. Furthermore, even if the flatness of the upper surface of the sealing material 240 is low, the transparent member 210 can be easily adhered.

[0037] In addition, the thickness (dZ １ ) is preferably 30 micrometers (μm) or more. １ is preferably 400 micrometers (μm) or less. １ The optimum value of is in the range of 100 to 200 micrometers (μm).

[0038] The space surrounded by the sensor chip 230, the sealing material 240, the adhesive layer 220, and the transparent member 210 is called a cavity.

[0039] Furthermore, it is preferable that a portion of the adhesive layer 220 (specifically, the lower portion) protrudes inward beyond the inner wall of the sealing material 240. In other words, a portion of the adhesive layer 220 protrudes into the cavity. In the figure, X1 is the X coordinate of the inner wall of the sealing material 240, and the portion indicated by the arrow protrudes inward beyond that position. This shape makes it difficult for light passing through the adhesive layer 220 to reach the light receiving region 231, thereby suppressing flare.

[0040] Furthermore, the size (in other words, width) dX of the adhesive surface between adhesive layer 220 and transparent member 210 in the X-axis direction is preferably within the range of 100 to 1000 micrometers (μm). The same applies to the Y-axis direction. This ensures airtightness.

[0041] Furthermore, the elastic modulus of the adhesive layer 220 is preferably lower than that of the sealing material 240, for example, 3 gigapascals (Gpa) or less. This characteristic makes it possible to alleviate stress caused by mismatching of the linear expansion coefficients.

[0042] Also, dZ is the distance from the chip surface (in other words, the upper surface) of the sensor chip 230 to the lower surface of the transparent member 210. ２ From the viewpoint of suppressing flare, it is preferable that the thickness is in the range of 30 to 300 micrometers (μm).

[0043] The transparent member 210 protects the upper surface of the sensor chip 230 and is made of glass or the like.

[0044] As illustrated in FIG. 1B, pixels 232 are arranged in a two-dimensional lattice pattern in the light receiving region 231. The shape of the sealing material 240 is frame-like when viewed from the Z-axis direction.

[0045] The material of the adhesive layer 220 having the above-described properties is, for example, epoxy resin. However, the material of the adhesive layer 220 is not limited to epoxy resin.

[0046] 3, silicone resin may be used as the material of the adhesive layer 220. Alternatively, other resins such as acrylic resin may be used for the adhesive layer 220.

[0047] [Manufacturing Method of Semiconductor Package] Next, a manufacturing method of the semiconductor package 200 will be described with reference to FIGS.

[0048] 4A, the sensor chip 230 is bonded to the substrate surface of the organic substrate 250. That is, die bonding is performed.

[0049] Then, as shown in b in the figure, a film 310 with an adhesive 311 applied to the underside is attached to the light-receiving region 231 in order to protect the light-receiving region 231. Then, as shown in c in the figure, the sensor chip 230 and the organic substrate 250 are electrically connected by wire bonding.

[0050] Then, as shown in d in the figure, the sealing material 240 is formed by the mold 320. Then, as shown in e in the figure, the film 310 is peeled off.

[0051] 5A, the upper surface of the sensor chip 230 is cleaned. Then, as shown in FIG. 5B, the resin that forms the adhesive layer 220 is applied to the upper surface of the sealing material 240. The height of the adhesive layer 220 from the sealing material 240 at this time is defined as dZ. ０ Let's say.

[0052] Then, as illustrated in FIG. 1C, the transparent member 210 is adhered to the sealing material 240 via the adhesive layer 220. During this adhesion, the transparent member 210 is pressed from above, and the thickness of the adhesive layer after pressing is dZ. １ The aforementioned dZ ０ and dZ １ The difference between these is called the "push amount."

[0053] Then, as illustrated in d in the figure, a predetermined number of external connection terminals 262 are formed on the organic substrate 250. Note that the step d in the figure is actually carried out with the substrate turned upside down.

[0054] In an iBGA (Interstitial Ball Grid Array), a common in-vehicle structure, the wires are not sealed, but ribs are formed around the wires, and the transparent member 210 is supported by the ribs. In this structure, the rib width needs to be wide, which increases the size of the sensor chip 230 and may result in poor yield. In contrast, in the above-described structure in which the wires are sealed with the sealing material 240, as illustrated in FIG. 4d, the sealing material 240 can be molded, which makes it possible to mold the sealing material 240 for multiple chips at the same time, thereby improving yield.

[0055] 6 is a flowchart showing an example of a manufacturing method of the semiconductor package 200 according to the first embodiment of the present technology. First, die bonding is performed (step S901), and the film 310 is attached to the light receiving region 231 (step S902). Then, wire bonding is performed (step S903), and the sealing material 240 is molded (step S904). Then, the film 310 is peeled off (step S905).

[0056] Next, the upper surface of the sensor chip 230 is cleaned (step S906), and a resin constituting the adhesive layer 220 is applied to the upper surface of the sealing material 240 (step S907). Then, the transparent member 210 is adhered to the sealing material 240 via the adhesive layer 220 (step S908), and a predetermined number of external connection terminals 262 are formed on the organic substrate 250 (step S909). After step S909, various processes such as dicing are performed, and the manufacturing process of the semiconductor package 200 is completed.

[0057] 7 is a graph showing an example of the relationship between the thickness of the adhesive layer and the amount of pressing in the first embodiment of the present technology. The vertical axis in the figure indicates the thickness of the adhesive layer 220 after pressing, and the horizontal axis in the figure indicates the amount of pressing. "I" in the figure indicates the range from the minimum value to the maximum value of the thickness that can be achieved with the corresponding amount of pressing. The white circle indicates the median value of the thickness. The gray area indicates the range where the thickness distribution is 50%.

[0058] As shown in the figure, the greater the pressing amount, the smaller the achievable thickness. Assembly is possible at a thickness of 60 micrometers (μm) or more. The thickness range of 100 to 200 micrometers (μm), enclosed by the dotted line, is the optimal range, with minimal wrinkling due to stress. However, thicknesses of 250 micrometers (μm) or more are not preferred, as they increase the risk of watermarks.

[0059] As described above, according to the first embodiment of the present technology, the sealing material 240 and the transparent member 210 are bonded together by the adhesive layer 220 whose thickness is 1 / 10 or more of that of the organic substrate 250, and therefore, stress due to mismatch in linear expansion coefficients can be sufficiently alleviated.

[0060] 2. Second Embodiment In the above-described first embodiment, the sealing material 240 and the transparent member 210 are bonded together by the adhesive layer 220, but there is a risk of flare occurring due to light passing through the adhesive layer 220 or light reflected therein. The semiconductor package 200 in this second embodiment differs from the first embodiment in that the adhesive layer 220 is black.

[0061] 8 is a cross-sectional view showing an example of a configuration of a semiconductor package 200 according to a second embodiment of the present technology. The semiconductor package 200 according to the second embodiment differs from the first embodiment in that a black adhesive layer 225 is provided instead of the adhesive layer 220. For example, the adhesive layer 225 can be made black by adding carbon black. This makes it possible to suppress flare caused by light passing through the adhesive layer 225.

[0062] As described above, according to the second embodiment of the present technology, since the adhesive layer 225 is black, flare caused by light passing through the adhesive layer 220 can be suppressed.

[0063] 3. Third Embodiment In the first embodiment described above, a single type of resin, such as an epoxy resin or a silicone resin, was used as the material for the adhesive layer 220. However, this configuration can make it difficult to satisfy various conditions related to the modulus of elasticity and moisture permeability. The semiconductor package 200 in this third embodiment differs from the first embodiment in that the adhesive layer 220 contains multiple resins with different properties.

[0064] 9A and 9B are a cross-sectional view and a top view showing an example of a configuration of a semiconductor package 200 according to a third embodiment of the present technology. In the drawing, "a" shows an example of a cross-sectional view of the semiconductor package 200, and "b" shows an example of a top view of the semiconductor package 200.

[0065] As illustrated in a and b in the figure, adhesive layer 220 in the third embodiment includes epoxy resin 221 and silicone resin 222. As illustrated in b in the figure, of the application area of ​​adhesive layer 220 on the upper surface of frame-shaped sealing material 240, epoxy resin 221 is applied to a portion, and silicone resin 222 is applied to the remainder.

[0066] FIG. 10 is a diagram showing an example of the characteristics of the resin used in the adhesive layer 220 according to the third embodiment of the present technology.

[0067] For example, the resin type TB1234b is a silicone resin with an elastic modulus of 0.01 gigapascals (Gpa) and a moisture permeability of 700 parts per million (ppm). When this resin is used as the adhesive layer 220, the semiconductor package 200 is less likely to become cloudy and condensation is less likely to occur.

[0068] Furthermore, the resin type SA2252 is an epoxy resin with an elastic modulus of 4.8 gigapascals (Gpa) and a moisture permeability of 250 ppm. When this resin is used as the adhesive layer 220, the semiconductor package 200 is prone to becoming cloudy and condensation is likely to occur.

[0069] The resin type 16A042-AA1 is an epoxy resin with an elastic modulus of 2.5 gigapascals (Gpa) and a moisture permeability of 300 ppm. When used as the adhesive layer 220, the semiconductor package 200 is less likely to become cloudy and is prone to condensation, although not as much as the resin type TB1234b.

[0070] As shown in the figure, silicone resins tend to have a low elastic modulus, which reduces wrinkles and cloudiness due to stress relaxation. Also, silicone resins tend to have high moisture permeability, which reduces the risk of condensation.

[0071] On the other hand, epoxy resin tends to have a high elastic modulus, which makes it prone to becoming cloudy. Also, epoxy resin tends to have low moisture permeability, which makes it prone to condensation. However, on the other hand, epoxy resin tends to have a high elastic modulus, which can suppress warping of the sensor chip 230.

[0072] Considering the above-mentioned properties, by using both epoxy resin and silicone resin, it is possible to simultaneously suppress warping and clouding and condensation.

[0073] The second embodiment can be applied to the third embodiment. In this case, both the epoxy resin 221 and the silicone resin 222 are blackened. Furthermore, the adhesive layer 220 can be configured to contain three or more resins, as needed.

[0074] As described above, according to the third embodiment of the present technology, since the adhesive layer 220 contains the epoxy resin 221 and the silicone resin 222, it is possible to simultaneously suppress warping and clouding and condensation.

[0075] 4. Fourth Embodiment In the first embodiment described above, one sensor chip 230 is sealed in the semiconductor package 200, but the present invention is not limited to this configuration. The semiconductor package 200 in this fourth embodiment differs from the first embodiment in that a plurality of sensor chips are sealed in the semiconductor package 200.

[0076] 11 is a cross-sectional view showing a configuration example of a semiconductor package 200 according to a fourth embodiment of the present technology. The semiconductor package 200 according to the fourth embodiment differs from the first embodiment in that a sensor chip 270 is further sealed in addition to the sensor chip 230. The sensor chips 230 and 270 are examples of the first and second semiconductor chips set forth in the claims.

[0077] Sensor chips 230 and 270 are connected onto organic substrate 250 by wire bonding, and transparent member 210 covering these chips is bonded to sealing material 240 by adhesive layer 220. By simultaneously sealing sensor chips 230 and 270 in semiconductor package 200 in this way, the manufacturing process can be reduced compared to when they are sealed individually. Furthermore, when two sensor chips are provided in the device, the size of semiconductor device 100 can be reduced compared to the first embodiment.

[0078] The second and third embodiments can be applied to the fourth embodiment. Also, three or more chips can be sealed in the semiconductor package 200 at the same time.

[0079] As described above, according to the fourth embodiment of the present technology, the sensor chips 230 and 270 are sealed in the semiconductor package 200, so that the manufacturing process can be reduced.

[0080] 5. Application Examples to Mobile Bodies The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of mobile body, such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot.

[0081] FIG. 12 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology according to the present disclosure can be applied.

[0082] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 12, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (Interface) 12053.

[0083] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0084] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0085] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, an imaging unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the imaging unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

[0086] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image or as distance measurement information. The light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

[0087] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0088] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, vehicle lane departure warning, etc.

[0089] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0090] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0091] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying the passengers of the vehicle or the outside of the vehicle of information. In the example of Fig. 12, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0092] FIG. 13 is a diagram showing an example of the installation position of the imaging unit 12031.

[0093] In FIG. 13, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.

[0094] The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided on the front nose and the imaging unit 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The imaging units 12102 and 12103 provided on the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided on the top of the windshield inside the vehicle cabin is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

[0095] 13 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, by overlaying the image data captured by the imaging units 12101 to 12104, an overhead image of the vehicle 12100 viewed from above can be obtained.

[0096] At least one of the image capturing units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image capturing units 12101 to 12104 may be a stereo camera made up of multiple image capturing elements, or may be an image capturing element having pixels for phase difference detection.

[0097] For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation.

[0098] For example, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on distance information obtained from the imaging units 12101 to 12104, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines a collision risk that indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0099] At least one of the image capturing units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the image capturing units 12101 to 12104. Such pedestrian recognition is performed, for example, by extracting feature points from the images captured by the image capturing units 12101 to 12104 as infrared cameras and performing pattern matching on a series of feature points that indicate the outline of an object to determine whether the object is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the images captured by the image capturing units 12101 to 12104 and recognizes the pedestrian, the audio / image output unit 12052 controls the display unit 12062 to superimpose a rectangular outline on the recognized pedestrian for emphasis. The audio / image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating the pedestrian at a desired position.

[0100] The above describes an example of a vehicle control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to, for example, the imaging unit 12031 of the above-described configuration. Specifically, the semiconductor device 100 of FIG. 1 can be applied to the imaging unit 12031. By applying the technology according to the present disclosure to the imaging unit 12031, stress can be alleviated, thereby making it possible to suppress clouding.

[0101] Note that the above-described embodiment shows an example for realizing the present technology, and the matters in the embodiment and the matters specifying the invention in the claims correspond to each other. Similarly, the matters specifying the invention in the claims and the matters in the embodiment of the present technology having the same name correspond to each other. However, the present technology is not limited to the embodiment, and can be realized by applying various modifications to the embodiment within the scope of the gist thereof.

[0102] The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0103] The present technology may also be configured as follows. (1) A semiconductor package comprising: a substrate; a semiconductor chip electrically connected to the substrate by a wire; an encapsulant for encapsulating the wire; an adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate; and a transparent member adhered to the encapsulant by the adhesive layer. (2) The semiconductor package according to (1), wherein the adhesive layer is black. (3) The semiconductor package according to (1) or (2), wherein the adhesive layer is made of epoxy resin. (4) The semiconductor package according to (1) or (2), wherein the adhesive layer is made of silicone resin. (5) The semiconductor package according to (1) or (2), wherein the adhesive layer contains multiple resins with different properties. (6) The semiconductor package according to (5), wherein the adhesive layer contains epoxy resin and silicone resin. (7) The semiconductor package according to any of (1) to (6), wherein the semiconductor chip includes first and second semiconductor chips. (8) The semiconductor package according to any one of (1) to (7), wherein the thickness of the adhesive layer is not less than 30 micrometers. (9) The semiconductor package according to any one of (1) to (8), wherein the thickness of the adhesive layer is not more than 400 micrometers. (10) The semiconductor package according to any one of (1) to (9), wherein a portion of the adhesive layer protrudes inward beyond the inner wall of the encapsulant. (11) The semiconductor package according to any one of (1) to (10), wherein the size of the adhesive layer and the adhesive surface of the transparent member in a predetermined direction parallel to the substrate is within a range of 100 micrometers to 1000 micrometers. (12) The semiconductor package according to any one of (1) to (11), wherein the elastic modulus of the adhesive layer is lower than that of the encapsulant. (13) The semiconductor package according to (12), wherein the elastic modulus of the adhesive layer is not more than 3 gigapascals. (14) The semiconductor package according to any one of (1) to (13), wherein the distance between the semiconductor chip and the transparent member is within a range of 30 micrometers to 300 micrometers.(15) A semiconductor device comprising: a semiconductor package including a substrate, a semiconductor chip electrically connected to the substrate by a wire, a sealing material for sealing the wire, an adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate, and a transparent member bonded to the sealing material by the adhesive layer, and a group of lenses for condensing incident light and directing it to the semiconductor chip. (16) A method for manufacturing a semiconductor package, comprising: a connecting step of electrically connecting the semiconductor chip to the substrate by a wire, a molding step of molding the sealing material for sealing the wire, a forming step of forming an adhesive layer on the sealing material having a thickness not less than 1 / 10 of the thickness of the substrate, and a bonding step of bonding the transparent member to the sealing material via the adhesive layer.

[0104] REFERENCE SIGNS LIST 100 semiconductor device 110 lens group 120 DSP circuit 130 display unit 140 operation unit 150 bus 160 frame memory 170 storage unit 180 power supply unit 200 semiconductor package 210 transparent member 220 adhesive layer 221 epoxy resin 222 silicone resin 230, 270 sensor chip 231 light receiving area 232 pixel 233, 251 pad 240 sealing material 250 organic substrate 261 wire 262 external connection terminal 310 film 311 adhesive 320 mold 12031 imaging unit

Claims

1. A semiconductor package comprising a substrate, a semiconductor chip electrically connected to the substrate by a wire, a sealing material for sealing the wire, an adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate, and a transparent member adhered to the sealing material by the adhesive layer.

2. The semiconductor package according to claim 1, wherein the adhesive layer is black.

3. The semiconductor package according to claim 1, wherein the material of the adhesive layer is an epoxy resin.

4. The semiconductor package according to claim 1, wherein the material of the adhesive layer is a silicone resin.

5. The semiconductor package according to claim 1, wherein the adhesive layer contains a plurality of resins having different properties.

6. The semiconductor package according to claim 5, wherein the adhesive layer contains an epoxy resin and a silicone resin.

7. The semiconductor package according to claim 1, wherein the semiconductor chip includes first and second semiconductor chips.

8. The semiconductor package according to claim 1, wherein the thickness of the adhesive layer is not less than 30 micrometers.

9. The semiconductor package according to claim 1, wherein the thickness of the adhesive layer does not exceed 400 micrometers.

10. The semiconductor package according to claim 1, wherein a part of the adhesive layer protrudes inside the inner wall of the sealing material.

11. The semiconductor package according to claim 1, wherein the size in a predetermined direction parallel to the substrate of the adhesive surface of the adhesive layer and the transparent member is in the range of 100 micrometers to 1000 micrometers.

12. The semiconductor package according to claim 1, wherein the elastic modulus of the adhesive layer is lower than that of the sealing material.

13. The semiconductor package according to claim 12, wherein the elastic modulus of the adhesive layer does not exceed 3 gigapascals.

14. The semiconductor package according to claim 1, wherein the distance between the semiconductor chip and the transparent member is in the range of 30 micrometers to 300 micrometers.

15. A semiconductor device comprising a semiconductor package including a substrate, a semiconductor chip electrically connected to the substrate by a wire, a sealing material for sealing the wire, an adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate, and a transparent member adhered to the sealing material by the adhesive layer, and a lens group for condensing incident light and guiding it to the semiconductor chip.

16. A method for manufacturing a semiconductor package, comprising: a connection procedure for electrically connecting a semiconductor chip to a substrate by wires; a molding procedure for molding a sealing material for sealing the wires; a forming procedure for forming an adhesive layer having a thickness not less than 1 / 10 of the thickness of the substrate on the sealing material; and an adhesion procedure for adhering a transparent member to the sealing material through the adhesive layer.

Images