Semiconductor device and vehicle

Abstract

This semiconductor device comprises a first terminal, a semiconductor element having a first electrode located on one side in a first direction, and a first conductive member conductively joined to the first electrode and the first terminal. The first conductive member has a first connection surface that is conductively joined to the first electrode, and a second connection surface that is conductively joined to the first terminal. The second connection surface faces a side opposite to the first connection surface in the first direction.

Description

Semiconductor device and vehicle

[0001] The present disclosure relates to a semiconductor device and a vehicle equipped with the semiconductor device.

[0002] Patent Document 1 discloses an example of a semiconductor device including a first semiconductor element, a first lead and a second lead each electrically connected to the first semiconductor element, and a first wire electrically connected to the first semiconductor element and the second lead. The first semiconductor element is a switching element such as a MOSFET. The first lead includes a first pad electrically connected to the first semiconductor element. The semiconductor device is used in a power conversion circuit such as a converter.

[0003] In the semiconductor device disclosed in Patent Document 1, one end of a first wire is conductively bonded to a second pad of a second lead. One end of the first wire is conductively bonded to a surface of the second pad that faces the same side as the main surface of the first pad in the first direction. As a result, in this semiconductor device, it is necessary to ensure sufficient space for accommodating the first wire on the side of the main surface of the first pad facing relative to the second pad in the first direction. This has made it difficult to reduce the dimensions of this semiconductor device.

[0004] JP 2018-14490 A

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that allows for reduction in device dimensions.

[0006] A semiconductor device provided by a first aspect of the present disclosure includes a semiconductor element having a first terminal and a first electrode located on one side in a first direction, and a first conductive member conductively connected to the first electrode and the first terminal. The first conductive member has a first connection surface conductively connected to the first electrode and a second connection surface conductively connected to the first terminal. The second connection surface faces the opposite side to the first connection surface in the first direction.

[0007] A vehicle provided by a second aspect of the present disclosure includes a semiconductor device, an on-board charger, a storage battery connected to the on-board charger, and a drive system connected to the storage battery. Components of the on-board charger include the semiconductor device. The semiconductor device further includes a second terminal having a pad portion and a third terminal, in comparison with the semiconductor device provided by the first aspect of the present disclosure. The pad portion and the third terminal are electrically connected to a semiconductor element included in the semiconductor device.

[0008] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0009] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view of the semiconductor device shown in FIG. 1. FIG. 3 is a plan view corresponding to FIG. 2, seen through the sealing resin. FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 5 is a front view of the semiconductor device shown in FIG. 1. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 3. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 3. FIG. 8 is a partial enlarged view of FIG. 7, with the sealing resin omitted. FIG. 9 is a partial enlarged view of FIG. 8. FIG. 10 is a schematic diagram of a vehicle equipped with the semiconductor device shown in FIG. 1. FIG. 11 is a partial enlarged plan view of a semiconductor device according to a second embodiment of the present disclosure, with the sealing resin omitted. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 11. FIG. 13 is a partial enlarged cross-sectional view of a semiconductor device according to a third embodiment of the present disclosure, corresponding to FIG. 8. FIG. 14 is a partial enlarged cross-sectional view of a semiconductor device according to a fourth embodiment of the present disclosure, corresponding to FIG. 8. FIG. 15 is a partially enlarged view of FIG. 14 . FIG. 16 is a partially enlarged cross-sectional view of a semiconductor device according to a fifth embodiment of the present disclosure, corresponding to FIG. 9 . FIG. 17 is a partially enlarged cross-sectional view of a semiconductor device according to a sixth embodiment of the present disclosure, corresponding to FIG. 9 . FIG. 18 is a partially enlarged cross-sectional view of a semiconductor device according to a seventh embodiment of the present disclosure, corresponding to FIG. 9 . FIG. 19 is a perspective view of a semiconductor device according to an eighth embodiment of the present disclosure. FIG. 20 is a plan view of the semiconductor device shown in FIG. 19 . FIG. 21 is a plan view corresponding to FIG. 20 , showing the sealing resin through the view. FIG. 22 is a bottom view of the semiconductor device shown in FIG. 19 . FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 21 . FIG. 24 is a partially enlarged view of FIG. 23 , with the sealing resin not shown.

[0010] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0011] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 9 . The semiconductor device A10 is used in a power conversion circuit. The semiconductor device A10 is packaged in a TO (Transistor Outline) format. The semiconductor device A10 is through-hole mounted on a wiring substrate. The semiconductor device A10 includes a semiconductor element 10, a first terminal 21, a second terminal 22, a third terminal 23, a fourth terminal 24, a bonding layer 29, a first conductive member 31, a second conductive member 32, a third conductive member 33, and a sealing resin 40. For ease of understanding, FIG. 3 shows the sealing resin 40 in a perspective view. In FIG. 3 , the transparent sealing resin 40 is indicated by an imaginary line (two-dot chain line). For ease of understanding, the sealing resin 40 is omitted from FIGS. 8 and 9 .

[0012] In the description of the semiconductor device A10, for convenience, for example, the normal direction to the mounting surface 221A of the first terminal 21 of the second terminal 22 described later will be referred to as the "first direction z." Also, for example, the direction perpendicular to the first direction z will be referred to as the "second direction x." Also, for example, the direction perpendicular to each of the first direction z and the second direction x will be referred to as the "third direction y."

[0013] The semiconductor element 10 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Alternatively, the semiconductor element 10 may be a field-effect transistor including a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) or a bipolar transistor such as an IGBT (Insulated Gate Bipolar Transistor). Furthermore, the semiconductor element 10 may be various diodes such as a Schottky barrier diode. In the description of the semiconductor device A10, the semiconductor element 10 is an n-channel, vertical-structure MOSFET. The semiconductor element 10 includes a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC).

[0014] As shown in FIGS. 3 and 8, the semiconductor element 10 has a second electrode 12, a first electrode 11, a gate electrode 13, and two detection electrodes 14.

[0015] 9 , the first electrode 11 is located on one side of the semiconductor element 10 in the first direction z. A current corresponding to the power converted by the semiconductor element 10 flows through the first electrode 11. In other words, the first electrode 11 corresponds to the source of the semiconductor element 10.

[0016] 9 , the second electrode 12 is located on the opposite side to the first electrode 11 in the first direction z. The second electrode 12 faces a pad portion 221 of a second terminal 22, which will be described later. A current corresponding to the power before being converted by the semiconductor element 10 flows through the second electrode 12. In other words, the second electrode 12 corresponds to the drain of the semiconductor element 10.

[0017] 3 , the gate electrode 13 is located on the same side as the first electrode 11 in the first direction z. A gate voltage for driving the semiconductor element 10 is applied to the gate electrode 13. When viewed in the first direction z, the area of ​​the gate electrode 13 is smaller than the area of ​​the first electrode 11.

[0018] 3 , the two detection electrodes 14 are located on the same side as the first electrode 11 and the gate electrode 13 in the first direction z. The two detection electrodes 14 are located on opposite sides of the gate electrode 13 in the third direction y. A voltage equivalent to the voltage applied to the first electrode 11 is applied to each of the two detection electrodes 14. When viewed in the first direction z, the area of ​​each of the two detection electrodes 14 is approximately equal to the area of ​​the gate electrode 13.

[0019] The first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 are obtained from the same lead frame. The lead frame is made of copper (Cu) or a copper alloy. Therefore, the composition of each of the first terminal 21, the second terminal 22, the third terminal 23, and the fourth terminal 24 includes copper.

[0020] The first terminal 21 is electrically connected to the first electrode 11 of the semiconductor element 10. Therefore, the first terminal 21 corresponds to the source terminal of the semiconductor device A10. As shown in Figures 3 and 7, the first terminal 21 extends in the third direction y. The first terminal 21 is located on the opposite side of the semiconductor element 10 in the first direction z from a pad portion 221 of the second terminal 22, which will be described later.

[0021] As shown in FIGS. 3 , 7 , and 8 , the first terminal 21 has a first inner portion 211, a first outer portion 212, and a third connection surface 213. The first inner portion 211 is covered with sealing resin 40. The first outer portion 212 is connected to the first inner portion 211 and protrudes from the sealing resin 40. The surface of the first outer portion 212 is plated with, for example, tin (Sn). The third connection surface 213 faces a second connection surface 312 of a first conductive member 31 (described later). In the first direction z, the third connection surface 213 is located closer to the first electrode 11 of the semiconductor element 10 than a mounting surface 221A of a pad portion 221 of the second terminal 22 (described later). The third connection surface 213 is included as part of the first inner portion 211.

[0022] The second terminal 22 is electrically connected to the second electrode 12 of the semiconductor element 10. Therefore, the second terminal 22 corresponds to the drain terminal of the semiconductor device A10. As shown in FIGS. 3 and 6 , the second terminal 22 has a pad portion 221 and a terminal portion 222. The pad portion 221 mounts the semiconductor element 10. The pad portion 221 is located on one side of the first terminal 21 in the third direction y. The pad portion 221 has a mounting surface 221A and a back surface 221B. The mounting surface 221A faces the second electrode 12 of the semiconductor element 10 in the first direction z. The back surface 221B faces the opposite side to the mounting surface 221A in the first direction z. The back surface 221B is, for example, tin-plated. The back surface 221B is exposed from the sealing resin 40.

[0023] 3 and 6 , a first through hole 223 is provided in the pad portion 221. The first through hole 223 penetrates the pad portion 221 in the first direction z from the mounting surface 221A. The first through hole 223 is located on the opposite side of the semiconductor element 10 from the first terminal 21 in the third direction y.

[0024] 3 and 6 , when viewed in the first direction z, the terminal portion 222 extends in the third direction y. The terminal portion 222 is connected to the pad portion 221. A portion of the terminal portion 222 is covered with the sealing resin 40. The terminal portion 222 is located next to the first terminal 21 in the second direction x. A portion of the terminal portion 222 protrudes from the sealing resin 40. The surface of the portion of the terminal portion 222 protruding from the sealing resin 40 is plated with, for example, tin (Sn).

[0025] 3 and 8, the bonding layer 29 bonds the pad portion 221 and the semiconductor element 10. The second electrode 12 of the semiconductor element 10 is conductively bonded to the mounting surface 221A of the pad portion 221 via the bonding layer 29. This allows the second terminal 22 to be electrically connected to the second electrode 12. The bonding layer 29 is, for example, solder. Alternatively, the bonding layer 29 may be a sintered body of metal particles containing silver or the like.

[0026] 3 , the third terminal 23 extends in the third direction y. The third terminal 23 is electrically connected to the gate electrode 13 of the semiconductor element 10. Therefore, the third terminal 23 corresponds to the gate terminal of the semiconductor device A10. The third terminal 23 is located on the opposite side of the first terminal 21 from the terminal portion 222 of the second terminal 22 in the second direction x.

[0027] 3, the third terminal 23 has a third inner part 231 and a third outer part 232. The third inner part 231 is covered with the sealing resin 40. The third outer part 232 is connected to the third inner part 231 and protrudes from the sealing resin 40. The surface of the third outer part 232 is plated with, for example, tin.

[0028] 3 , the fourth terminal 24 extends in the third direction y. The fourth terminal 24 is electrically connected to one of the two detection electrodes 14 of the semiconductor element 10. Therefore, a voltage equivalent to the voltage applied to the first terminal 21 is applied to the fourth terminal 24. The fourth terminal 24 is located between the first terminal 21 and the third terminal 23 in the second direction x.

[0029] 3, the fourth terminal 24 has a fourth inner part 241 and a fourth outer part 242. The fourth inner part 241 is covered with the sealing resin 40. The fourth outer part 242 is connected to the fourth inner part 241 and protrudes from the sealing resin 40. The surface of the fourth outer part 242 is plated with, for example, tin.

[0030] 3, the first terminal 21, the terminal portion 222 of the second terminal 22, the third terminal 23, and the fourth terminal 24 are arranged along the second direction x. As shown in Fig. 5, the first outer portion 212 of the first terminal 21, the terminal portion 222 of the second terminal 22, the third outer portion 232 of the third terminal 23, and the fourth outer portion 242 of the fourth terminal 24 all have the same height h from the bottom surface 42 of the sealing resin 40 (described later).

[0031] 3 and 8 , the first conductive member 31 is conductively joined to the first electrode 11 of the semiconductor element 10 and the third connection surface 213 of the first terminal 21. This electrically connects the second terminal 22 to the first electrode 11. The first conductive member 31 contains copper or a copper alloy. The first conductive member 31 is a metal clip. When viewed in the first direction z, the first conductive member 31 extends in the third direction y.

[0032] As shown in FIG. 8 , the first conductive member 31 has a first connecting surface 311, a second connecting surface 312, a first inclined portion 313, and a second inclined portion 314. The first connecting surface 311 is located at one end of the first conductive member 31 and is conductively bonded to the first electrode 11 of the semiconductor element 10 via a bonding layer 29. The second connecting surface 312 is located at the other end of the first conductive member 31 and is conductively bonded to the third connecting surface 213 of the first terminal 21 via the bonding layer 29. The second connecting surface 312 faces the opposite side from the first connecting surface 311 in the first direction z. The first inclined portion 313 is located between the first connecting surface 311 and the second connecting surface 312 in the third direction y and is connected to the first connecting surface 311. The first inclined portion 313 is inclined relative to the first connecting surface 311 in a direction away from the semiconductor element 10 in the first direction z. The second inclined portion 314 is located between the first inclined portion 313 and the second connecting surface 312 in the third direction y, and is connected to the second connecting surface 312. The second inclined portion 314 is inclined relative to the second connecting surface 312 in a direction away from the first inner portion 211 of the first terminal 21 in the first direction z.

[0033] 8 , the first conductive member 31 is located in the first direction z between the mounting surface 221A of the pad portion 221 of the second terminal 22 and the first terminal 21. Furthermore, the first conductive member 31 is located in the first direction z between the first electrode 11 of the semiconductor element 10 and the first terminal 21. The distance in the first direction z from the first connection surface 311 to the second connection surface 312 is smaller than the dimension of the first terminal 21 in the first direction z.

[0034] 3 , the second conductive member 32 is conductively joined to the gate electrode 13 of the semiconductor element 10 and the third inner portion 231 of the third terminal 23. This allows the third terminal 23 to be electrically connected to the gate electrode 13. The second conductive member 32 is a wire. The composition of the second conductive member 32 includes, for example, either gold (Au) or aluminum (Al).

[0035] 3 , the third conductive member 33 is conductively joined to one of the two detection electrodes 14 of the semiconductor element 10 and the fourth inner portion 241 of the fourth terminal 24. This allows the fourth terminal 24 to be electrically connected to one of the two detection electrodes 14. The third conductive member 33 is a wire. The composition of the third conductive member 33 includes, for example, either gold or aluminum.

[0036] As shown in FIGS. 3 and 7 , the sealing resin 40 covers the semiconductor element 10, the first conductive member 31, the second conductive member 32, and the third conductive member 33. Furthermore, as shown in FIG. 6 , the sealing resin 40 covers a portion of the pad portion 221 of the second terminal 22. The sealing resin 40 has electrical insulation properties. The sealing resin 40 is made of a material containing, for example, black epoxy resin. The sealing resin 40 has a top surface 41, a bottom surface 42, a first side surface 43, a second side surface 44, and two third side surfaces 45.

[0037] 6 and 7 , the top surface 41 faces the same side in the first direction z as the mounting surface 221A of the pad portion 221 of the second terminal 22. The bottom surface 42 faces the opposite side in the first direction z from the top surface 41. The back surface 221B of the pad portion 221 is exposed from the bottom surface 42.

[0038] As shown in Figures 2 and 4, the first side surface 43 and the second side surface 44 face opposite each other in the third direction y. Each of the first side surface 43 and the second side surface 44 is connected to the top surface 41 and the bottom surface 42. The first outer portion 212 of the first terminal 21, a portion of the terminal portion 222 of the second terminal 22, the third outer portion 232 of the third terminal 23, and the fourth outer portion 242 of the fourth terminal 24 each protrude from the first side surface 43. As shown in Figures 2 and 4, the two third side surfaces 45 face opposite each other in the second direction x. Each of the two third side surfaces 45 is connected to the top surface 41 and the bottom surface 42.

[0039] 2, the sealing resin 40 is provided with a second through hole 46, a first opening 47, and two second openings 48. As shown in Fig. 7, the second through hole 46 penetrates the sealing resin 40 from the top surface 41 in the first direction z. As viewed in the first direction z, the second through hole 46 overlaps with the first through hole 223 provided in the pad portion 221 of the second terminal 22. As viewed in the first direction z, the dimension of the second through hole 46 is smaller than the dimension of the first through hole 223.

[0040] 2, 4, and 5, the first opening 47 is recessed from the first side surface 43. The first opening 47 opens from each of the top surface 41 and the bottom surface 42. The first opening 47 is located between the first terminal 21 and the terminal portion 222 of the second terminal 22 in the second direction x.

[0041] 2, the two second openings 48 are spaced apart from each other in the second direction x. Each of the two second openings 48 opens from the top surface 41 and one of the two third side surfaces 45. As shown in FIGS. 2 and 6, the mounting surface 221A of the pad portion 221 of the second terminal 22 is exposed from each of the two second openings 48.

[0042] Next, a vehicle B equipped with the semiconductor device A10 will be described with reference to Fig. 10. The vehicle B is, for example, an electric vehicle (EV).

[0043] As shown in FIG. 10 , vehicle B includes an on-board charger 81, a storage battery 82, and a drive system 83. Power is supplied to the on-board charger 81 wirelessly from a power supply facility (not shown) installed outdoors. Alternatively, power may be supplied from the power supply facility to the on-board charger 81 via a wired connection. The on-board charger 81 is configured with a step-up DC-DC converter. The semiconductor device A10 forms part of the converter. Therefore, the components of the on-board charger 81 include the semiconductor device A10. The voltage of the power supplied to the on-board charger 81 is stepped up by the converter and then supplied to the storage battery 82. The stepped-up voltage is, for example, 600 V.

[0044] The drive system 83 drives the vehicle B. The drive system 83 includes an inverter 831 and a drive source 832. The power stored in the storage battery 82 is supplied to the inverter 831. The power supplied from the storage battery 82 to the inverter 831 is DC power. Alternatively, unlike the power system shown in FIG. 10 , a step-up DC-DC converter may be further provided between the storage battery 82 and the inverter 831. The inverter 831 converts DC power into AC power. The inverter 831 is electrically connected to the drive source 832. The drive source 832 includes an AC motor and a transmission. When the AC power converted by the inverter 831 is supplied to the drive source 832, the AC motor rotates and the rotation is transmitted to the transmission. The transmission appropriately reduces the rotation speed transmitted from the AC motor and then rotates the drive shaft of the vehicle B. This drives the vehicle B. In vehicle B, the rotation speed of the AC motor is freely changed by inverter 831 based on information such as the amount of fluctuation in accelerator pedal pressure.

[0045] Next, the effects of the semiconductor device A10 will be described.

[0046] The semiconductor device A10 includes a semiconductor element 10, a first terminal 21, and a first conductive member 31. The first conductive member 31 has a first connection surface 311 that is conductively joined to the first electrode 11 of the semiconductor element 10, and a second connection surface 312 that is conductively joined to the first terminal 21. The second connection surface 312 faces the opposite side to the first connection surface 311 in the first direction z. This configuration allows the dimension of the space occupied by the first conductive member 31 in the semiconductor device A10 to be further reduced in the first direction z. Therefore, this configuration allows the semiconductor device A10 to be reduced in size.

[0047] The semiconductor device A10 further includes a second terminal 22 having a pad portion 221. The first conductive member 31 is located between the mounting surface 221A of the pad portion 221 and the first terminal 21 in the first direction z. By adopting this configuration, the conductive path in the first conductive member 31 can be further reduced.

[0048] In the above case, the first conductive member 31 is located between the first electrodes 11 of the semiconductor element 10 in the first direction z. By adopting this configuration, a short circuit between the first conductive member 31 and the pad portion 221 can be effectively prevented.

[0049] The distance in the first direction z from the first connection surface 311 to the second connection surface 312 of the first conductive member 31 is smaller than the dimension in the first direction z of the first terminal 21. By adopting this configuration, the dimension in the first direction z of the semiconductor device A10 can be further reduced.

[0050] The sealing resin 40 has a first opening 47 recessed from the first side surface 43. The first opening 47 is located between the first terminal 21 and the terminal portion 222 of the second terminal 22 in the second direction x. This configuration further increases the distance (creepage distance) along the surface of the sealing resin 40 from the first terminal 21 to the second terminal 22. This can improve the dielectric strength of the semiconductor device A10.

[0051] The semiconductor element 10 is conductively bonded to the pad portion 221 of the second terminal 22. The pad portion 221 is exposed from the bottom surface 42 of the sealing resin 40. By adopting this configuration, the pad portion 221 can be utilized as a conductive path, and heat generated from the semiconductor element 10 can be more efficiently released to the outside.

[0052] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 11 and 12. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, the sealing resin 40 is not shown in Figures 11 and 12.

[0053] In the semiconductor device A20, the configuration of the pad portion 221 of the second terminal 22 is different from that of the semiconductor device A10.

[0054] 11 and 12 , the pad portion 221 of the second terminal 22 is provided with an opening 224 that opens from the mounting surface 221A. When viewed in the first direction z, the first conductive member 31 overlaps the opening 224. A portion of the sealing resin 40 is accommodated in the opening 224. In the semiconductor device A20, the opening 224 is recessed from the mounting surface 221A. Alternatively, the opening 224 may penetrate the pad portion 221 from the mounting surface 221A in the first direction z. In the semiconductor device A20, a portion of the first conductive member 31 is accommodated in the opening 224. Alternatively, the entire first conductive member 31 may be configured to be located outward from the opening 224 in the first direction z.

[0055] Next, the effects of the semiconductor device A20 will be described.

[0056] The semiconductor device A20 includes a semiconductor element 10, a first terminal 21, and a first conductive member 31. The first conductive member 31 has a first connection surface 311 that is conductively bonded to the first electrode 11 of the semiconductor element 10, and a second connection surface 312 that is conductively bonded to the first terminal 21. The second connection surface 312 faces the opposite side from the first connection surface 311 in the first direction z. Therefore, with this configuration, the semiconductor device A20 can also be reduced in size. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0057] In the semiconductor device A20, the pad portion 221 of the second terminal 22 is provided with an opening 224 that opens from the mounting surface 221A. When viewed in the first direction z, the first conductive member 31 overlaps the opening 224. This configuration more effectively prevents a short circuit between the first conductive member 31 and the pad portion 221. Furthermore, as shown in FIG. 12 , by accommodating a portion of the first conductive member 31 in the opening 224, the distance in the first direction z from the third connection surface 213 of the first terminal 21 to the mounting surface 221A is further shortened. This allows the dimension of the semiconductor device A20 in the first direction z to be further reduced.

[0058] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to FIG. 13. In this figure, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, FIG. 13 does not illustrate the sealing resin 40. FIG. 13 corresponds to FIG. 8, which shows the semiconductor device A10.

[0059] In the semiconductor device A30, the configuration of the first conductive member 31 is different from that of the semiconductor device A10.

[0060] 13 , the first conductive member 31 includes a portion located on the opposite side of the mounting surface 221A of the pad portion 221 of the second terminal 22 in the first direction z, with the third connection surface 213 of the first terminal 21 as the reference. The second inclined portion 314 of the first conductive member 31 inclines in the opposite direction to that of the semiconductor device A10. As a result, the second inclined portion 314 of the first conductive member 31 overlaps the first terminal 21 when viewed in the third direction y.

[0061] Next, the effects of the semiconductor device A30 will be described.

[0062] The semiconductor device A30 includes a semiconductor element 10, a first terminal 21, and a first conductive member 31. The first conductive member 31 has a first connection surface 311 that is conductively bonded to the first electrode 11 of the semiconductor element 10, and a second connection surface 312 that is conductively bonded to the first terminal 21. The second connection surface 312 faces the opposite side from the first connection surface 311 in the first direction z. Therefore, with this configuration, the semiconductor device A30 can also be reduced in size. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0063] In the semiconductor device A30, the first conductive member 31 includes a portion located on the opposite side of the mounting surface 221A of the pad portion 221 of the second terminal 22 in the first direction z, with the third connection surface 213 of the first terminal 21 as a reference. This configuration effectively prevents a short circuit between the first conductive member 31 and the pad portion 221. Furthermore, because the second inclined portion 314 of the first conductive member 31 overlaps the first terminal 21 as viewed in the third direction y, the second inclined portion 314 can restrict the wetting and spreading of the bonding layer 29 that conductively bonds the first conductive member 31 and the first terminal 21.

[0064] Fourth Embodiment: A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to FIGS. 14 and 15. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, the sealing resin 40 is not shown in FIGS. 14 and 15. FIG. 14 corresponds to FIG. 8, which shows the semiconductor device A10. FIG. 15 corresponds to FIG. 9, which shows the semiconductor device A10.

[0065] In the semiconductor device A40, the configuration of the first conductive member 31 is different from that of the semiconductor device A10.

[0066] 14 and 15 , the first conductive member 31 has a protrusion 315 that protrudes from the second connection surface 312. When viewed in the third direction y, the protrusion 315 overlaps the first terminal 21. The protrusion 315 is in contact with the first terminal 21. In the semiconductor device A40, the first conductive member 31 does not have the second inclined portion 314. Alternatively, the first conductive member 31 may have the second inclined portion 314 and may have the protrusion 315.

[0067] Next, the effects of the semiconductor device A40 will be described.

[0068] The semiconductor device A40 includes a semiconductor element 10, a first terminal 21, and a first conductive member 31. The first conductive member 31 has a first connection surface 311 that is conductively bonded to the first electrode 11 of the semiconductor element 10, and a second connection surface 312 that is conductively bonded to the first terminal 21. The second connection surface 312 faces the opposite side from the first connection surface 311 in the first direction z. Therefore, with this configuration, the semiconductor device A40 can also be reduced in size. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A40 achieves the same effects as the semiconductor device A10.

[0069] In the semiconductor device A40, the first conductive member 31 has a protrusion 315 that protrudes from the second connection surface 312. When viewed in a direction perpendicular to the first direction z, the protrusion 315 overlaps the first terminal 21. With this configuration, the protrusion 315 can restrict the wetting and spreading of the bonding layer 29 that conductively bonds the first conductive member 31 and the first terminal 21. Furthermore, the protrusion 315 contacts the first terminal 21. With this configuration, the protrusion 315 can suppress misalignment of the first conductive member 31 with respect to the first terminal 21 in a direction perpendicular to the first direction z.

[0070] Fifth Embodiment: A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to FIG. 16. In this figure, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, FIG. 16 does not illustrate the sealing resin 40. FIG. 16 corresponds to FIG. 9, which shows the semiconductor device A10.

[0071] In the semiconductor device A50, the configuration of the first terminal 21 is different from that of the semiconductor device A10.

[0072] 16 , the first inner part 211 of the first terminal 21 is provided with a recess 214 recessed from the third connection surface 213. At least a portion of each of the second connection surface 312 of the first conductive member 31 and the bonding layer 29 is housed in the recess 214. In the semiconductor device A50, the second connection surface 312 is conductively bonded not to the third connection surface 213 but to a portion of the first inner part 211 that defines the recess 214.

[0073] Next, the effects of the semiconductor device A50 will be described.

[0074] The semiconductor device A50 includes a semiconductor element 10, a first terminal 21, and a first conductive member 31. The first conductive member 31 has a first connection surface 311 that is conductively bonded to the first electrode 11 of the semiconductor element 10, and a second connection surface 312 that is conductively bonded to the first terminal 21. The second connection surface 312 faces the opposite side from the first connection surface 311 in the first direction z. Therefore, with this configuration, the semiconductor device A50 can also be reduced in size. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A50 achieves the same effects as the semiconductor device A10.

[0075] In the semiconductor device A50, the first terminal 21 is provided with a recess 214 recessed from the third connection surface 213. At least a portion of each of the second connection surface 312 of the first conductive member 31 and the bonding layer 29 is housed in the recess 214. With this configuration, the recess 214 can restrict the wetting and spreading of the bonding layer 29 that conductively bonds the first conductive member 31 and the first terminal 21. Furthermore, the recess 214 can suppress misalignment of the first conductive member 31 with respect to the first terminal 21 in a direction perpendicular to the first direction z.

[0076] Sixth Embodiment: A semiconductor device A60 according to a sixth embodiment of the present disclosure will be described with reference to FIG. 17. In this figure, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, FIG. 17 does not illustrate the sealing resin 40. FIG. 17 corresponds to FIG. 9, which shows the semiconductor device A10.

[0077] In the semiconductor device A60, the configuration of the first conductive member 31 is different from that of the semiconductor device A10.

[0078] 17 , the first conductive member 31 has a through portion 316 that penetrates the first conductive member 31 in the first direction z from the second connecting surface 312. A portion of the bonding layer 29 is accommodated in the through portion 316.

[0079] Next, the effects of the semiconductor device A60 will be described.

[0080] The semiconductor device A60 includes a semiconductor element 10, a first terminal 21, and a first conductive member 31. The first conductive member 31 has a first connection surface 311 that is conductively bonded to the first electrode 11 of the semiconductor element 10, and a second connection surface 312 that is conductively bonded to the first terminal 21. The second connection surface 312 faces the opposite side from the first connection surface 311 in the first direction z. Therefore, with this configuration, the semiconductor device A60 can also be reduced in size. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A60 achieves the same effects as the semiconductor device A10.

[0081] In the semiconductor device A60, the first conductive member 31 has a through portion 316 that penetrates from the second connection surface 312 in the first direction z. A portion of the bonding layer 29 is housed in the through portion 316. With this configuration, the through portion 316 can restrict the wetting and spreading of the bonding layer 29 that conductively bonds the first conductive member 31 and the first terminal 21. Furthermore, the bonding layer 29 exhibits an anchor effect with respect to the first conductive member 31. This can improve the bonding strength of the first conductive member 31 to the first terminal 21.

[0082] Seventh Embodiment: A semiconductor device A70 according to a seventh embodiment of the present disclosure will be described with reference to FIG. 18. In this figure, elements that are the same as or similar to those in the semiconductor device A10 described above are designated by the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, FIG. 18 does not illustrate the sealing resin 40. FIG. 18 corresponds to FIG. 9, which shows the semiconductor device A10.

[0083] In the semiconductor device A70, the configuration of the first terminal 21 is different from that of the semiconductor device A60 described above.

[0084] 18 , the first inner portion 211 of the first terminal 21 is provided with an engaging portion 215 that protrudes from the third connecting surface 213. The engaging portion 215 is inserted into the through portion 316 of the first conductive member 31. The engaging portion 215 is in contact with the bonding layer 29.

[0085] Next, the effects of the semiconductor device A70 will be described.

[0086] The semiconductor device A70 includes a semiconductor element 10, a first terminal 21, and a first conductive member 31. The first conductive member 31 has a first connection surface 311 that is conductively bonded to the first electrode 11 of the semiconductor element 10, and a second connection surface 312 that is conductively bonded to the first terminal 21. The second connection surface 312 faces the opposite side from the first connection surface 311 in the first direction z. Therefore, with this configuration, the semiconductor device A70 can also be reduced in size. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A70 achieves the same effects as the semiconductor device A10.

[0087] In the semiconductor device A70, the first terminal 21 is provided with an engaging portion 215 that protrudes from the third connection surface 213. The engaging portion 215 is inserted into the through portion 316 of the first conductive member 31. With this configuration, the engaging portion 215 and the through portion 316 can suppress misalignment of the first conductive member 31 with respect to the first terminal 21 in a direction perpendicular to the first direction z.

[0088] Eighth Embodiment: A semiconductor device A80 according to an eighth embodiment of the present disclosure will be described with reference to FIGS. 19 to 24. The semiconductor device A80 is packaged in TO form. The semiconductor device A80 is surface-mounted on a wiring board. For ease of understanding, FIG. 21 shows the sealing resin 40 in a see-through manner. In FIG. 21, the see-through sealing resin 40 is shown by imaginary lines. For ease of understanding, FIG. 24 omits the sealing resin 40.

[0089] In the semiconductor device A80, the configurations of the first terminal 21, the second terminal 22, the third terminal 23, the fourth terminal 24 and the sealing resin 40 are different from those of the semiconductor device A10 described above.

[0090] As shown in Fig. 21 , the first terminal 21 has a first inner part 211 and a plurality of first outer parts 212. The first inner part 211 extends in the second direction x. As shown in Figs. 20 and 22 , the plurality of first outer parts 212 are arranged along the second direction x. As shown in Figs. 19 and 23 , each of the plurality of first outer parts 212 is bent in a gull-wing shape when viewed in the second direction x.

[0091] 20 to 22, the second terminal 22 has a pad portion 221 but does not have a terminal portion 222. As shown in Fig. 23, a portion of the pad portion 221 protrudes from the second side surface 44 of the sealing resin 40. The pad portion 221 has a recessed portion 225 instead of the first through hole 223. The recessed portion 225 is recessed from the mounting surface 221A of the pad portion 221. A portion of the sealing resin 40 recesses into the recessed portion 225.

[0092] As shown in FIG. 19, when viewed in the second direction x, the third outer portion 232 of the third terminal 23 and the fourth outer portion 242 of the fourth terminal 24 are each bent in a gull-wing shape.

[0093] 20 and 22 , the sealing resin 40 does not have the second through-hole 46 or the first opening 47. The mounting surface 221A of the pad portion 221 of the second terminal 22 is not exposed from either of the two second openings 48.

[0094] As shown in FIG. 24, in the semiconductor device A80, the configuration of the first conductive member 31 is the same as that in the semiconductor device A10 (see FIG. 8).

[0095] Next, the effects of the semiconductor device A80 will be described.

[0096] The semiconductor device A80 includes a semiconductor element 10, a first terminal 21, and a first conductive member 31. The first conductive member 31 has a first connection surface 311 that is conductively bonded to the first electrode 11 of the semiconductor element 10, and a second connection surface 312 that is conductively bonded to the first terminal 21. The second connection surface 312 faces the opposite side from the first connection surface 311 in the first direction z. Therefore, with this configuration, the semiconductor device A80 can also be reduced in size. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A80 achieves the same effects as the semiconductor device A10.

[0097] The present disclosure is not limited to the above-described embodiment. The specific configuration of each part of the present disclosure can be freely modified in various ways. In the present disclosure, the technology according to the present disclosure can be applied not only to semiconductor devices with a TO package format, but also to semiconductor devices with a DIP (Dual Inline Package) package format, for example.

[0098] The present disclosure includes embodiments described in the following appendices. Appendix 1. A semiconductor device comprising: a first terminal; a semiconductor element having a first electrode located on one side in a first direction; and a first conductive member conductively bonded to the first electrode and the first terminal, wherein the first conductive member has a first connection surface conductively bonded to the first electrode and a second connection surface conductively bonded to the first terminal, and the second connection surface faces the opposite side to the first connection surface in the first direction. Appendix 2. The semiconductor device according to Appendix 1, further comprising a sealing resin covering the semiconductor element and the first conductive member. Appendix 3. The semiconductor device according to Appendix 2, further comprising: a second terminal having a pad portion, wherein the pad portion has a mounting surface facing the semiconductor element in the first direction, and the semiconductor element is bonded to the mounting surface. Appendix 4. The semiconductor device according to Appendix 3, wherein the first conductive member is located between the mounting surface and the first terminal in the first direction. Appendix 5. The semiconductor device according to Appendix 4, wherein the first conductive member is located between the first electrode and the first terminal in the first direction. Appendix 6. The semiconductor device according to Appendix 3, wherein the distance in the first direction from the first connection surface to the second connection surface is smaller than the dimension of the first terminal in the first direction. Appendix 7. The semiconductor device according to Appendix 3, wherein the pad portion has an opening that opens from the mounting surface, and the first conductive member overlaps the opening as viewed in the first direction. Appendix 8. The semiconductor device according to Appendix 3, wherein the first terminal has a third connection surface facing the second connection surface, and the third connection surface is located closer to the first electrode than the mounting surface in the first direction. Appendix 9. The semiconductor device according to Appendix 8, further comprising a bonding layer that conductively bonds the second connection surface and the first terminal. Appendix 10. The semiconductor device according to Appendix 9, wherein the first conductive member includes a portion located on the opposite side of the third connection surface from the side on which the mounting surface is located in the first direction. Appendix 11. The semiconductor device according to Appendix 9, wherein the first conductive member is provided with a protrusion that protrudes from the second connection surface, and the protrusion overlaps the first terminal when viewed in a direction perpendicular to the first direction.Appendix 12. The semiconductor device according to Appendix 11, wherein the protruding portion is in contact with the first terminal. Appendix 13. The semiconductor device according to Appendix 9, wherein the first terminal is provided with a recess recessed from the third connection surface, and at least a portion of each of the second connection surface and the bonding layer is housed in the recess. Appendix 14. The semiconductor device according to Appendix 9, wherein the first conductive member is provided with a through portion penetrating from the second connection surface in the first direction, and a portion of the bonding layer is housed in the through portion. Appendix 15. The semiconductor device according to Appendix 14, wherein the first terminal is provided with an engaging portion protruding from the third connection surface, and the engaging portion is inserted into the through portion. Appendix 16. The semiconductor device according to any of Appendixes 3 to 15, wherein the semiconductor element has a second electrode located on the opposite side to the first electrode in the first direction, and the second electrode is conductively bonded to the mounting surface. Appendix 17. The semiconductor device according to Appendix 16, wherein the second terminal has a terminal portion connected to the pad portion, and wherein a portion of each of the first terminal and the terminal portion protrudes from the sealing resin. Appendix 18. The semiconductor device according to Appendix 16, further comprising a third terminal, wherein the semiconductor element has a gate electrode located on the same side as the first electrode in the first direction, and wherein the third terminal is electrically connected to the gate electrode. Appendix 19. The semiconductor device according to Appendix 18, further comprising a second conductive member electrically connected to the gate electrode and the third terminal, wherein the second conductive member is covered with the sealing resin. Appendix 20. A vehicle comprising the semiconductor device according to Appendix 18, an on-board charger, a storage battery electrically connected to the on-board charger, and a drive system electrically connected to the storage battery, wherein components of the on-board charger include the semiconductor device. Appendix 21. The semiconductor device according to Appendix 7, wherein a portion of the first conductive member is housed in the opening. Appendix 22. The semiconductor device according to claim 21, wherein the opening is recessed from the mounting surface. 23. The semiconductor device according to claim 21, wherein the opening penetrates the pad portion in the first direction.Supplementary Note 24. The semiconductor device according to Supplementary Note 16, wherein the pad portion has a back surface facing the opposite side to the mounting surface in the first direction, and the back surface is exposed from the sealing resin. Supplementary Note 25. The semiconductor device according to Supplementary Note 19, wherein the second conductive member is a wire.

[0099] A10 to A80: semiconductor device 10: semiconductor element 11, 12: first electrode, second electrode 13: gate electrode 14: detection electrode 21: first terminal 211: first inner part 212: first outer part 213: third connection surface 214: recess 215: engagement part 22: second terminal 221: pad part 221A: mounting surface 221B: back surface 222: terminal part 223: first through hole 224: opening 225: recessed part 23: third terminal 231: third inner part 232: third outer part 24: fourth terminal 241: fourth inner part 242: fourth outer part 29: bonding layer 31: first conductive member 311, 312: first connection surface, second connection surface 313, 314: First inclined portion, second inclined portion 315: Convex portion 316: Penetrating portion 32, 33: Second conductive member, third conductive member 40: Sealing resin 41: Top surface 42: Bottom surface 43, 44, 45: First side surface, second side surface, third side surface 46: Second through hole 47, 48: First opening, second opening z, x, y: First direction, second direction, third direction

Claims

1. A semiconductor device comprising: a first terminal; a semiconductor element having a first electrode located on one side in a first direction; and a first conductive member electrically joined to the first electrode and the first terminal, the first conductive member having a first connection surface electrically joined to the first electrode and a second connection surface electrically joined to the first terminal, the second connection surface facing the side opposite to the first connection surface in the first direction.

2. The semiconductor device according to claim 1, further comprising a sealing resin covering the semiconductor element and the first conductive member.

3. The semiconductor device according to claim 2, further comprising a second terminal having a pad portion, the pad portion having a mounting surface facing the semiconductor element in the first direction, the semiconductor element being joined to the mounting surface.

4. The semiconductor device according to claim 3, wherein the first conductive member is located between the mounting surface and the first terminal in the first direction.

5. The semiconductor device according to claim 4, wherein the first conductive member is located between the first electrode and the first terminal in the first direction.

6. The semiconductor device according to claim 3, wherein a distance in the first direction from the first connection surface to the second connection surface is smaller than a dimension of the first terminal in the first direction.

7. The semiconductor device according to claim 3, wherein the pad portion is provided with an opening opening from the mounting surface, and the first conductive member overlaps the opening when viewed in the first direction.

8. The semiconductor device according to claim 3, wherein the first terminal has a third connection surface facing the second connection surface, and in the first direction, the third connection surface is located closer to the first electrode than the mounting surface.

9. The semiconductor device according to claim 8, further comprising a bonding layer for electrically joining the second connection surface and the first terminal.

10. The semiconductor device according to claim 9, wherein the first conductive member includes a portion located on the side opposite to the side where the mounting surface is located with respect to the third connection surface in the first direction.

11. The semiconductor device according to claim 9, wherein the first conductive member is provided with a convex portion protruding from the second connection surface, and the convex portion overlaps the first terminal when viewed in a direction orthogonal to the first direction.

12. The semiconductor device according to claim 11, wherein the convex portion is in contact with the first terminal.

13. The first terminal is provided with a recess recessed from the third connection surface, and at least a part of each of the second connection surface and the bonding layer is accommodated in the recess. The semiconductor device according to claim 9.

14. The first conductive member is provided with a through hole penetrating from the second connection surface in the first direction, and a part of the bonding layer is accommodated in the through hole. The semiconductor device according to claim 9.

15. The first terminal is provided with an engaging portion protruding from the third connection surface, and the engaging portion is inserted into the through hole. The semiconductor device according to claim 14.

16. The semiconductor element has a second electrode located on the side opposite to the first electrode in the first direction, and the second electrode is electrically bonded to the mounting surface. The semiconductor device according to any one of claims 3 to 15.

17. The second terminal has a terminal portion connected to the pad portion, and a part of each of the first terminal and the terminal portion protrudes from the encapsulating resin. The semiconductor device according to claim 16.

18. Further comprising a third terminal, the semiconductor element has a gate electrode located on the same side as the first electrode in the first direction, and the third terminal is electrically connected to the gate electrode. The semiconductor device according to claim 16.

19. Further comprising a second conductive member electrically bonded to the gate electrode and the third terminal, and the second conductive member is covered with the encapsulating resin. The semiconductor device according to claim 18.

20. A vehicle comprising the semiconductor device according to claim 18, an in-vehicle charger, a storage battery electrically connected to the in-vehicle charger, and a drive system electrically connected to the storage battery, wherein the components of the in-vehicle charger include the semiconductor device.

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