Semiconductor device

Abstract

This semiconductor device comprises a semiconductor element, a continuity support member on which the semiconductor element is mounted, and an encapsulating resin. The semiconductor element includes a first electrode, a second electrode, and a third electrode. The continuity support member includes a first terminal part in continuity with the first electrode, a second terminal part in continuity with the second electrode, and a third terminal part in continuity with the third electrode. The first terminal part, the second terminal part, and the third terminal part are exposed from the encapsulating resin. The first electrode is located on the element back surface while the second electrode and the third electrode are located on the element main surface. The encapsulating resin has a resin side surface out of which the first terminal part protrudes. The first terminal part is bent in the direction that the element main surface faces.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, semiconductor devices including semiconductor elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) have been known. For example, Patent Document 1 discloses a conventional semiconductor device. The semiconductor device described in Patent Document 1 includes multiple leads, a semiconductor element, multiple wires, and a sealing resin. The multiple leads support the semiconductor element and are electrically connected to the semiconductor element. The semiconductor element is a MOSFET. The semiconductor element has a main surface and a back surface. A gate electrode and a source electrode are formed on the main surface, and a drain electrode is formed on the back surface. One of the multiple leads has a bonding pad portion (the second bonding pad portion in Patent Document 1) on which the semiconductor element is mounted. The drain electrode is electrically connected to the bonding pad portion of the lead. Each of the multiple wires is individually connected to the gate electrode and source electrode of the semiconductor element and one of the multiple leads. The sealing resin covers portions of the multiple leads, the semiconductor element, and the multiple wires.

[0003] Japanese Patent Application Laid-Open No. 2019-176034

[0004] [Summary] One way to improve the performance of semiconductor devices is to increase the planar area of ​​the semiconductor element. This is because increasing the planar area of ​​the drain electrode and source electrode of the semiconductor element reduces the conduction resistance between the drain electrode and the source electrode, i.e., the on-resistance. However, in the semiconductor device described in Patent Document 1, the drain electrode is bonded to a bonding pad, making it difficult to mount a semiconductor element with an area larger than the bonding pad in plan view. Therefore, in conventional semiconductor devices, increasing the planar area of ​​the semiconductor element requires expanding the bonding pad, which leads to an increase in the size of the semiconductor device.

[0005] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can increase the area of ​​a semiconductor element in a plan view.

[0006] A first aspect of the present disclosure provides a semiconductor device comprising: a semiconductor element having a first electrode, a second electrode, and a third electrode; a conductive support member on which the semiconductor element is mounted; and a sealing resin covering a portion of the conductive support member and the semiconductor element. The semiconductor element controls on / off between the first electrode and the second electrode in response to a drive signal input to the third electrode. The conductive support member includes a first terminal portion exposed from the sealing resin and conductive to the first electrode; a second terminal portion exposed from the sealing resin and conductive to the second electrode; a third terminal portion exposed from the sealing resin and conductive to the third electrode; and an island portion to which the second electrode is conductively joined. The semiconductor element has a main surface and a back surface facing opposite each other in a thickness direction of the sealing resin. The first electrode is disposed on the back surface, and the second electrode and the third electrode are disposed on the main surface. The sealing resin has a first resin side surface facing one side of a first direction perpendicular to the thickness direction. The first terminal portion protrudes from the first resin side surface when viewed in the thickness direction, and is bent in the thickness direction in a direction in which the element main surface faces.

[0007] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. FIG. 2 is a view showing the sealing resin in the perspective view of FIG. 1 with imaginary lines. FIG. 3 is a perspective view showing the semiconductor device according to the first embodiment. FIG. 4 is a view showing the sealing resin in the perspective view of FIG. 3 with imaginary lines. FIG. 5 is a plan view showing the semiconductor device according to the first embodiment. FIG. 6 is a view showing the sealing resin in the plan view of FIG. 5 with imaginary lines. FIG. 7 is a bottom view showing the semiconductor device according to the first embodiment. FIG. 8 is a view showing the sealing resin in imaginary lines in the bottom view of FIG. 7. FIG. 9 is a view showing a part of the conductive support member in imaginary lines in the bottom view of FIG. 8, with the sealing resin omitted. FIG. 10 is a front view showing the semiconductor device according to the first embodiment. FIG. 11 is a back view showing the semiconductor device according to the first embodiment. FIG. 12 is a left side view showing the semiconductor device according to the first embodiment. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 6. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 6 . FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 6 . FIG. 16 is a cross-sectional view showing an example of mounting the semiconductor device according to the first embodiment on a circuit board. FIG. 17 is a perspective view showing a semiconductor device according to a second embodiment, with the sealing resin indicated by imaginary lines. FIG. 18 is a perspective view showing a semiconductor device according to the second embodiment, with the sealing resin indicated by imaginary lines. FIG. 19 is a plan view showing a semiconductor device according to the second embodiment. FIG. 20 is a diagram showing the sealing resin indicated by imaginary lines in the plan view of FIG. 19 . FIG. 21 is a bottom view showing the semiconductor device according to the second embodiment. FIG. 22 is a diagram showing the sealing resin indicated by imaginary lines in the bottom view of FIG. 21 . FIG. 23 is a back view showing the semiconductor device according to the second embodiment. FIG. 24 is a left side view showing the semiconductor device according to the second embodiment, with the sealing resin indicated by imaginary lines. FIG. 25 is a right side view showing the semiconductor device according to the second embodiment, with the sealing resin indicated by imaginary lines. Fig. 26 is a cross-sectional view taken along line XXVI-XXVI in Fig. 22. Fig. 27 is a perspective view showing a semiconductor device according to a first modified example of the second embodiment, in which the sealing resin is indicated by imaginary lines. Fig. 28 is a perspective view showing a semiconductor device according to a first modified example of the second embodiment, in which the sealing resin is indicated by imaginary lines.FIG. 29 is a plan view showing a semiconductor device according to a first modified example of the second embodiment. FIG. 30 is a view showing the sealing resin in the plan view of FIG. 29 with imaginary lines. FIG. 31 is a bottom view showing a semiconductor device according to a first modified example of the second embodiment. FIG. 32 is a view showing the sealing resin in imaginary lines in the bottom view of FIG. 31. FIG. 33 is a rear view showing a semiconductor device according to a first modified example of the second embodiment. FIG. 34 is a left side view showing a semiconductor device according to a first modified example of the second embodiment, with the sealing resin shown in imaginary lines. FIG. 35 is a right side view showing a semiconductor device according to a first modified example of the second embodiment, with the sealing resin shown in imaginary lines. FIG. 36 is a perspective view showing a semiconductor device according to a second modified example of the second embodiment, with the sealing resin shown in imaginary lines. FIG. 37 is a perspective view showing a semiconductor device according to a second modified example of the second embodiment, with the sealing resin shown in imaginary lines. FIG. 38 is a plan view showing a semiconductor device according to a second modified example of the second embodiment. FIG. 39 is a bottom view showing a semiconductor device according to a second modified example of the second embodiment. FIG. 40 is a back view showing a semiconductor device according to a second modified example of the second embodiment. FIG. 41 is a plan view showing another configuration example of a semiconductor device according to a second modified example of the second embodiment. FIG. 42 is a perspective view showing a semiconductor device according to a third modified example of the second embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 43 is a perspective view showing a semiconductor device according to a third modified example of the second embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 44 is a plan view showing a semiconductor device according to a third modified example of the second embodiment. FIG. 45 is a bottom view showing a semiconductor device according to a third modified example of the second embodiment. FIG. 46 is a back view showing a semiconductor device according to a third modified example of the second embodiment. FIG. 47 is a plan view showing another configuration example of a semiconductor device according to a third modified example of the second embodiment. FIG. 48 is a perspective view showing a semiconductor device according to the third embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 49 is a perspective view showing a semiconductor device according to the third embodiment, in which the sealing resin is indicated by imaginary lines. FIG. 50 is a plan view showing a semiconductor device according to the third embodiment. Fig. 51 is a diagram showing the sealing resin by imaginary lines in the plan view of Fig. 50. Fig. 52 is a bottom view showing the semiconductor device according to the third embodiment.FIG. 53 is a bottom view of FIG. 52 , with the sealing resin indicated by an imaginary line. FIG. 54 is a front view of a semiconductor device according to a third embodiment. FIG. 55 is a cross-sectional view taken along line LV-LV in FIG. 53 . FIG. 56 is a cross-sectional view taken along line LVI-LVI in FIG. 53 . FIG. 57 is a perspective view of a semiconductor device according to a fourth embodiment, with the sealing resin indicated by an imaginary line. FIG. 58 is a perspective view of a semiconductor device according to the fourth embodiment, with the sealing resin indicated by an imaginary line. FIG. 59 is a plan view of a semiconductor device according to the fourth embodiment. FIG. 60 is a bottom view of a semiconductor device according to the fourth embodiment. FIG. 61 is a bottom view of FIG. 60 , with the sealing resin indicated by an imaginary line. FIG. 62 is a cross-sectional view taken along line LXII-LXII in FIG. 61 . FIG. 63 is a perspective view of a semiconductor device according to a fifth embodiment, with the sealing resin indicated by an imaginary line. FIG. 64 is a perspective view showing a semiconductor device according to the fifth embodiment, with the sealing resin indicated by imaginary lines. FIG. 65 is a plan view showing a semiconductor device according to the fifth embodiment. FIG. 66 is a bottom view showing a semiconductor device according to the fifth embodiment. FIG. 67 is a diagram showing the sealing resin indicated by imaginary lines in the bottom view of FIG. 66. FIG. 68 is a left side view showing a semiconductor device according to the fifth embodiment. FIG. 69 is a cross-sectional view taken along line LXIX-LXIX in FIG. 67. FIG. 70 is a perspective view showing another configuration example of a semiconductor device according to the fifth embodiment, with the sealing resin indicated by imaginary lines. FIG. 71 is a plan view of the semiconductor device shown in FIG. 70, with the sealing resin indicated by imaginary lines. FIG. 72 is a bottom view of the semiconductor device shown in FIG. 70, with the sealing resin indicated by imaginary lines. FIG. 73 is a perspective view showing a semiconductor device according to the sixth embodiment, with the sealing resin indicated by imaginary lines. FIG. 74 is a perspective view showing a semiconductor device according to the sixth embodiment, with the sealing resin indicated by imaginary lines. Fig. 75 is a plan view showing a semiconductor device according to a sixth embodiment. Fig. 76 is a diagram showing the sealing resin in the plan view of Fig. 75 by using imaginary lines. Fig. 77 is a bottom view showing the semiconductor device according to the sixth embodiment. Fig. 78 is a diagram showing the sealing resin in the bottom view of Fig. 77 by using imaginary lines. Fig. 79 is a cross-sectional view taken along line LXXIX-LXXIX in Fig. 78.Fig. 80 is a perspective view showing another configuration example of the semiconductor device according to the sixth embodiment, with the sealing resin shown by imaginary lines. Fig. 81 is a plan view of the semiconductor device shown in Fig. 80, with the sealing resin shown by imaginary lines. Fig. 82 is a bottom view of the semiconductor device shown in Fig. 80, with the sealing resin shown by imaginary lines. Fig. 83 is a cross-sectional view showing a semiconductor device according to a modification of the sixth embodiment, corresponding to the cross section of Fig. 79.

[0008] DETAILED DESCRIPTION A preferred embodiment of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, identical or similar components will be designated by the same reference numerals, and redundant description will be omitted. Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not intended to necessarily assign any order to their objects.

[0009] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on (an) object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on (an) object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on (an) object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on (an) object B" includes "a certain object A is in contact with a certain object B and is located on (an) object B" and "a certain object A is located on (an) object B with another object interposed between the certain object A and the certain object B." Furthermore, "object A overlaps object B when viewed in a certain direction" includes "object A overlaps the entire object B" and "object A overlaps a part of object B," unless otherwise specified. Furthermore, "object A (its material) contains material C" includes "object A (its material) is made of material C" and "object A (its material) is mainly composed of material C." Furthermore, "a surface A faces in a certain direction B (one side or the other side of a certain direction B)," unless otherwise specified, is not limited to the case where surface A is at a 90° angle with respect to direction B, but also includes the case where surface A is tilted with respect to direction B. Furthermore, "a surface A is perpendicular to a surface B," unless otherwise specified, is not limited to the case where surface A is at a 90° angle with respect to surface B, but also includes the case where surface A is tilted with respect to surface B.

[0010] 1 to 15 show a semiconductor device A10 according to a first embodiment. The semiconductor device A10 includes a semiconductor element 1, a sealing resin 2, a conductive support member 3, and a conductive member 41. The semiconductor device A10 also includes a plurality of bonding materials 192, 193, and a plurality of bonding materials 419.

[0011] For ease of explanation, reference will be made to the thickness direction z, first direction y, and second direction x, which are perpendicular to each other. The thickness direction z corresponds to the thickness direction of the semiconductor device A10. Furthermore, "plan view" refers to the view in the thickness direction z. The first direction y is perpendicular to the thickness direction z. The second direction x is perpendicular to the thickness direction z and the first direction y. Note that one side of the thickness direction z is sometimes referred to as "upper," and the other side of the thickness direction z is sometimes referred to as "lower." However, terms such as "upper," "lower," "upper," "lower," "top surface," and "bottom surface" indicate the relative positional relationship of each component, etc. in the thickness direction z, and do not necessarily define the relationship with the direction of gravity.

[0012] 1 to 15, the semiconductor device A10 has, for example, a transistor outline (TO) type package structure, and can be surface-mounted on a circuit board mounted on an electric device, an electric vehicle, or the like.

[0013] The semiconductor element 1 is an element that destroys the electrical function of the semiconductor device A10. The semiconductor element 1 is, for example, a MOSFET. The semiconductor element 1 may be other transistors such as a bipolar transistor, an IGBT, and a MISFET (Metal-Insulator-Semiconductor Field-Effect Transistor) instead of a MOSFET. The semiconductor element 1 in this embodiment has a vertical structure. The semiconductor element 1 may be a p-channel type or an n-channel type. The semiconductor element 1 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes, for example, Si (silicon). The composition of the compound semiconductor substrate may not be Si but may include a wide bandgap semiconductor (such as SiC (silicon carbide) and GaN (gallium nitride)) that has a wider bandgap than Si, or an ultra-wide bandgap semiconductor (Ga ２ O ３ (gallium oxide), diamond, or AlN (aluminum nitride), etc. However, the composition of the compound semiconductor substrate is not limited to these.

[0014] The semiconductor element 1 has a main surface 1a and a rear surface 1b. As shown in Figures 13 to 15, the main surface 1a and the rear surface 1b are spaced apart from each other in the thickness direction z. The main surface 1a faces downward in the thickness direction z, and the rear surface 1b faces upward in the thickness direction z.

[0015] The semiconductor element 1 has a first electrode 11, a second electrode 12, and a third electrode 13. The semiconductor element 1 controls the on / off state between the first electrode 11 and the second electrode 12 in response to a drive signal input to the third electrode 13. In an example in which the semiconductor element 1 is a MOSFET, the first electrode 11 is a drain electrode, the second electrode 12 is a source electrode, and the third electrode 13 is a gate electrode. As shown in FIGS. 13 to 15 , the first electrode 11 is disposed on the element rear surface 1b, and the second electrode 12 and the third electrode 13 are disposed on the element main surface 1a. The first electrode 11 can be formed over substantially the entire element rear surface 1b. As shown in FIG. 9 , the area of ​​the second electrode 12 is larger than the area of ​​the third electrode 13 in a plan view. In this embodiment, as shown in FIG. 9 , the third electrode 13 is disposed near one of the four corners of the semiconductor element 1 in a plan view.

[0016] The semiconductor element 1 is mounted on and supported by the conductive support member 3. The element main surface 1a of the semiconductor element 1 faces a part (an island portion 322 described below) of the conductive support member 3. Therefore, the semiconductor element 1 is mounted on the conductive support member 3 with the element main surface 1a facing downward in the thickness direction z.

[0017] The sealing resin 2 covers the semiconductor element 1 and a portion of the conductive support member 3. The sealing resin 2 also covers the conductive member 41. The sealing resin 2 is electrically insulating. The sealing resin 2 includes, for example, a black epoxy resin, but the composition of the sealing resin 2 is not limited to epoxy resin. The sealing resin 2 can be formed, for example, by transfer molding. The sealing resin 2 has a resin main surface 21, a resin back surface 22, and a plurality of resin side surfaces 231 to 234.

[0018] The resin main surface 21 and the resin back surface 22 are spaced apart from each other in the thickness direction z. As shown in FIGS. 10 to 15 , the resin main surface 21 faces upward in the thickness direction z, and the resin back surface 22 faces downward in the thickness direction z. Therefore, in the thickness direction z, the resin main surface 21 faces the same direction as the element back surface 1b, and the resin back surface 22 faces the same direction as the element main surface 1a. The resin main surface 21 and the resin back surface 22 are each, for example, a plane perpendicular to the thickness direction z. As shown in FIG. 7 , a portion of the conductive support member 3 (the lower surface of an island portion 322 and the lower surface of a pad portion 332, which will be described later) is exposed at the resin back surface 22.

[0019] Each of the multiple resin side surfaces 231 to 234 is sandwiched between the resin main surface 21 and the resin back surface 22 in the thickness direction z. The upper edge of each of the resin side surfaces 231 to 234 in the thickness direction z is connected to the resin main surface 21, and the lower edge of each of the resin side surfaces 231 to 234 in the thickness direction z is connected to the resin back surface 22. In the illustrated example, each of the resin side surfaces 231 to 234 has a portion that is inclined with respect to the thickness direction z. The pair of resin side surfaces 231, 232 are spaced apart from each other in the first direction y and face opposite sides to each other in the first direction y. The pair of resin side surfaces 233, 234 are spaced apart from each other in the second direction x and face opposite sides to each other in the second direction x. The resin side surface 231 is an example of a "first resin side surface" as defined in the claims.

[0020] The sealing resin 2 has a pair of recesses 251, 252. The recess 251 is formed in the resin side surface 233. The recess 251 is located in a central portion of the resin side surface 233 in the first direction y. The recess 251 is recessed from the resin side surface 233 in the second direction x and is recessed downward in the thickness direction z from the resin main surface 21. The recess 252 is formed in the resin side surface 234. The recess 252 is located in a central portion of the resin side surface 234 in the first direction y. The recess 252 is recessed from the resin side surface 234 in the second direction x and is recessed downward in the thickness direction z from the resin main surface 21. The pair of recesses 251, 252 are aligned in the second direction x. Note that the sealing resin 2 does not necessarily have to have at least one of the pair of recesses 251, 252.

[0021] The conductive support member 3 is a member that constitutes a conductive path to the semiconductor element 1. The conductive support member 3 is obtained, for example, from the same lead frame. The composition of the lead frame, i.e., the conductive support member 3, includes, for example, copper or a copper alloy, but may also include other metal materials. The conductive support member 3 includes a plurality of leads 31 to 33. Note that the planar shape, arrangement, and planar size of the plurality of leads 31 to 33 are not limited to the example shown in the drawing.

[0022] The lead 31 is electrically connected to the first electrode 11 of the semiconductor element 1. The lead 31 includes a plurality of terminal portions 311 and pad portions 312. Each of the plurality of terminal portions 311 is connected to a pad portion 312. In the illustrated example, the lead 31 includes eight terminal portions 311, but the number of terminal portions 311 is not limited thereto. For example, the number can be changed as appropriate depending on the magnitude of the current flowing through the first electrode 11 of the semiconductor element 1. In the examples shown in FIGS. 1 , 14 , and 15 , a depression extending downward in the thickness direction z is formed in the portion where the plurality of terminal portions 311 and the pad portion 312 are connected. This depression can reduce the outflow of the bonding material 419 and also increase the adhesive strength between the sealing resin 2 and the lead 31.

[0023] Each of the multiple terminal portions 311 is electrically connected to the first electrode 11 of the semiconductor element 1. Each of the multiple terminal portions 311 is exposed from the sealing resin 2 and protrudes from the resin side surface 231 in the first direction y. In a plan view, each of the multiple terminal portions 311 is located on one side of the sealing resin 2 in the first direction y. In a plan view, each of the multiple terminal portions 311 has a rectangular shape with the first direction y as its longitudinal direction. In a plan view, the multiple terminal portions 311 are arranged along the second direction x. Each of the multiple terminal portions 311 is bent in the thickness direction z in a direction in which the element main surface 1a faces (downward in the thickness direction z). Each of the multiple terminal portions 311 is bent in a gull-wing shape. Each of the multiple terminal portions 311 is an example of a "first terminal portion" as defined in the claims.

[0024] Each of the multiple terminals 311 includes a base end 311a, a tip end 311b, and an intermediate portion 311c. The base end 311a, tip end 311b, and intermediate portion 311c described below are common to all terminals 311 unless otherwise specified. The base end 311a, tip end 311b, and intermediate portion 311c each have a uniform thickness. Note that the "thickness of an object A (a certain portion A)" in this disclosure refers to the dimension in the normal direction to the top surface of the object A (a certain portion A).

[0025] The base end 311a protrudes from the resin side surface 231. In the illustrated example, the base end 311a is parallel to the xy plane. The base end 311a includes a portion covered with the sealing resin 2 and a portion exposed from the sealing resin 2. The portion of the base end 311a covered with the sealing resin 2 is connected to the pad portion 312, and the portion of the base end 311a exposed from the sealing resin 2 protrudes from the resin side surface 231.

[0026] The tip portion 311b is located below the base end portion 311a in the thickness direction z. The tip portion 311b is used when surface-mounting the semiconductor device A10 on the circuit board. The tip portion 311b extends along the first direction y in a plan view. In the illustrated example, the tip portion 311b is inclined with respect to the xy plane. Alternatively, the tip portion 311b may be parallel to the xy plane.

[0027] The intermediate portion 311c is interposed between the base end portion 311a and the tip end portion 311b. The intermediate portion 311c extends downward in the thickness direction z from the base end portion 311a. In the illustrated example, the intermediate portion 311c is inclined with respect to the thickness direction z (x-z plane). Unlike this example, the intermediate portion 311c may be flat with respect to the thickness direction z. In this configuration, the dimension of the semiconductor device A10 in the first direction y can be reduced. On the other hand, a configuration in which the intermediate portion 311c is inclined with respect to the thickness direction z facilitates the manufacture of the semiconductor device A10 (bending of the terminal portion 311). The shape of the intermediate portion 311c is not limited in any way.

[0028] The pad portion 312 is located on the other side in the first direction y with respect to the multiple terminal portions 311 (the side on which the semiconductor element 1 is located in the first direction y). The pad portion 312 is covered with sealing resin 2. Each of the multiple terminal portions 311 extends from the pad portion 312 in one direction in the first direction y. The thickness of the pad portion 312 is approximately the same as the thickness of each terminal portion 311. The pad portion 312 is covered with sealing resin 2. The pad portion 312 is an example of a "second pad portion" as defined in the claims.

[0029] The lead 32 is electrically connected to the second electrode 12 of the semiconductor element 1. In this embodiment, the lead 32 is flat. The lead 32 includes a terminal portion 321, an island portion 322, and two extending portions 323. The terminal portion 321 and the two extending portions 323 are each connected to the island portion 322. The number of extending portions 323 is not limited to two.

[0030] At least a portion of the terminal portion 321 is exposed from the sealing resin 2, and in this embodiment, in a plan view, the terminal portion 321 protrudes from the resin side surface 232 in the first direction y. In this embodiment, the terminal portion 321 includes a portion covered by the sealing resin 2 and a portion exposed from the sealing resin 2. The portion of the terminal portion 321 covered by the sealing resin 2 is connected to the island portion 322, and the portion exposed from the sealing resin 2 protrudes from the resin side surface 232 in the first direction y. In a plan view, the terminal portion 321 is located on the opposite side of the sealing resin 2 from the terminal portions 311. The terminal portion 321 is used as a terminal when mounting the semiconductor device A10 on the circuit board. In the illustrated example, the terminal portion 321 is parallel to the xy plane. The terminal portion 321 is located on one side of the island portion 322 in the first direction y (the opposite side of the terminal portions 311). In the illustrated example, the lower surface (surface facing downward in the thickness direction z) of the terminal portion 321 is flush with the lower surface (surface facing downward in the thickness direction z) of the island portion 322. In the illustrated example, the terminal portion 321 includes, in a portion protruding from the resin side surface 232, a rectangular portion whose longitudinal direction is the second direction x, and two extending portions that partially extend in the first direction y from the rectangular portion. The terminal portion 321 is an example of a "second terminal portion" as defined in the claims.

[0031] The semiconductor element 1 is mounted on the island portion 322. In the illustrated example, the island portion 322 is parallel to the xy plane. The upper surface of the island portion 322 (the surface facing upward in the thickness direction z) faces the element main surface 1a (particularly the second electrode 12) of the semiconductor element 1. As shown in FIG. 7 , the lower surface of the island portion 322 (the surface facing downward in the thickness direction z) is exposed on the resin back surface 22 of the sealing resin 2. In the illustrated example, the lower surface of the island portion 322 is flush with the resin back surface 22, but may be recessed or protrude from the resin back surface 22. In the illustrated example, the leads 32 have portions around the island portion 322 in a plan view that are thinner than the island portion 322 as appropriate. This reduces the likelihood of the leads 32 coming off the sealing resin 2.

[0032] The island portion 322 is electrically connected to the second electrode 12 of the semiconductor element 1 by a bonding material 192. The bonding material 192 is, for example, solder, but may also be, for example, a sintered body of metal particles containing silver (Ag). The island portion 322 is electrically connected to the second electrode 12 via the bonding material 192. Therefore, the terminal portion 321 is electrically connected to the second electrode 12 (source electrode).

[0033] Each of the two extending portions 323 extends in the second direction x from the island portion 322. One of the two extending portions 323 extends in the second direction x from one edge of the island portion 322 in the second direction x, and the other of the two extending portions 323 extends in the second direction x from the other edge of the island portion 322 in the second direction x. A portion of each of the upper surfaces (surfaces facing upward in the thickness direction z) of the two extending portions 323 is exposed from a corresponding one of the pair of recesses 251, 252. This configuration stabilizes the position of the lead 32 during manufacturing of the semiconductor device A10. This is because the conductive support member 3 can be fixed by pressing each extending portion 323 with a clamping member during manufacturing of the semiconductor device A10 (e.g., during transportation or formation of the sealing resin 2). Note that the lead 32 does not necessarily have to include at least one of the two extending portions 323.

[0034] The lead 33 is electrically connected to the third electrode 13 of the semiconductor element 1. In this embodiment, the lead 33 is flat. The lead 33 is located near one of the four corners of the semiconductor element 1 in a plan view, where the third electrode 13 is located. The lead 33 includes a terminal portion 331 and a pad portion 332. The terminal portion 331 is connected to the pad portion 332.

[0035] At least a portion of the terminal portion 331 is exposed from the sealing resin 2 and protrudes from the resin side surface 232 in the first direction y. The terminal portion 331 includes a portion covered by the sealing resin 2 and a portion exposed from the sealing resin 2. The portion of the terminal portion 331 covered by the sealing resin 2 is connected to the pad portion 332, and the portion exposed from the sealing resin 2 protrudes from the resin side surface 232 in the first direction y. In a plan view, the terminal portion 331 is located on the opposite side of the sealing resin 2 from the terminal portions 311. In a plan view, the terminal portion 331 is located on the same side of the sealing resin 2 as the terminal portion 321. The terminal portion 331 is located on one side of the second direction x (the side on which the resin side surface 234 is located relative to the semiconductor element 1) relative to the terminal portion 321. The terminal portion 331 is used as a terminal when mounting the semiconductor device A10 on the circuit board. In the illustrated example, the terminal portion 331 is parallel to the xy plane. In the illustrated example, the terminal portion 331 includes, at a portion protruding from the resin side surface 232, a rectangular portion whose longitudinal direction is the second direction x and an extending portion that partially extends from the rectangular portion in the first direction y. The terminal portion 331 is an example of a "third terminal portion" as defined in the claims.

[0036] The pad portion 332 is located on the side of the terminal portion 331 where the semiconductor element 1 is located in the first direction y. The upper surface of the pad portion 332 (the surface facing upward in the thickness direction z) faces the element main surface 1a (particularly the third electrode 13) of the semiconductor element 1. The pad portion 332 is covered with the sealing resin 2 except for the lower surface (the surface facing downward in the thickness direction z). In the illustrated example, the lower surface of the pad portion 332 is flush with the resin rear surface 22. The thickness of the pad portion 332 is the same as the thickness of the terminal portion 331, but may be different. Furthermore, the thickness of the pad portion 332 is approximately the same as the thickness of the island portion 322, but may be different. In the illustrated example, the lead 33 has portions around the pad portion 332 in a plan view that are thinner than the pad portion 332 as appropriate. This reduces the likelihood of the lead 33 coming off the sealing resin 2. The pad portion 332 is an example of a "first pad portion" as defined in the claims.

[0037] The pad portion 332 is electrically connected to the third electrode 13 of the semiconductor element 1 by a bonding material 193. The bonding material 193 is, for example, solder, but may also be, for example, a sintered body of metal particles containing silver (Ag). The pad portion 332 is electrically connected to the third electrode 13 via the bonding material 193. Therefore, the terminal portion 331 is electrically connected to the third electrode 13 (gate electrode).

[0038] 6, 8, 9, and 15, in the semiconductor device A10, the semiconductor element 1 is mounted across the island portion 322 and the pad portion 332. That is, in a plan view, the semiconductor element 1 overlaps both the island portion 322 and the pad portion 332.

[0039] The conductive member 41 is bonded to the first electrode 11 and the lead 31 of the semiconductor element 1, providing electrical continuity therebetween. The conductive member 41 is covered by the sealing resin 2 and is not exposed from the sealing resin 2. The conductive member 41 is, for example, a metal plate. The conductive member 41 includes, for example, copper or a copper alloy, but may also include other metal materials. In the illustrated example, the conductive member 41 is located on the opposite side of the semiconductor element 1 from the island portion 322 in the thickness direction z.

[0040] The conductive member 41 includes two bonding portions 411, 412 and a connecting portion 413. The bonding portion 411 is bonded to the first electrode 11 by a bonding material 419. The bonding portion 412 is bonded to the pad portion 312 of the lead 31 by the bonding material 419. Each bonding material 419 is a conductive bonding material, such as solder. Each bonding material 419 may be a sintered metal instead of solder. In the illustrated example, the bonding portion 412 is located above the bonding portion 411 in the thickness direction z. The connecting portion 413 is interposed between the two bonding portions 411, 412. The connecting portion 413 extends upward from the bonding portion 411 in the thickness direction z and connects to the bonding portion 412. The connecting portion 413 causes the conductive member 41 to have a shape bent in the thickness direction z.

[0041] The bonding portion 411 is electrically connected to the first electrode 11 via the bonding material 419, and the bonding portion 412 is electrically connected to the pad portion 312 via the bonding material 419. This establishes electrical connection between the pad portion 312 and the first electrode 11 via the conductive member 41. Therefore, each terminal portion 311 is electrically connected to the first electrode 11 (drain electrode).

[0042] FIG. 16 shows an example of mounting the semiconductor device A10 on the circuit board. FIG. 16 corresponds to the cross section of FIG. 15 . As shown in FIG. 16 , the semiconductor device A10 is mounted on a circuit board 90 using a conductive adhesive 91. The conductive adhesive 91 is, for example, solder or a sintered metal. A wiring pattern (not shown) is appropriately formed on the upper surface of the circuit board 90. The semiconductor device A10 is electrically connected to the wiring pattern of the circuit board 90 via the conductive adhesive 91. When the circuit board 90 is mounted on a vehicle such as an electric vehicle, the semiconductor device A10 is used in the following components. First, it is a power conversion device (e.g., an AC-DC converter or a DC-DC converter) that converts power supplied wirelessly or via a wire from a power supply facility into power suitable for charging a storage battery of the vehicle (electric vehicle). Second, it is a power conversion device (e.g., an inverter) that converts power stored in a storage battery of the vehicle (electric vehicle) into power suitable for driving a motor that runs the vehicle (electric vehicle). Thirdly, the semiconductor device A10 is a power conversion device (such as a DC-DC converter) that converts power stored in a storage battery of a vehicle into power suitable for driving each ECU (Electronic Control Unit) of the electric vehicle. Note that application examples of the semiconductor device A10 are not limited to these.

[0043] The semiconductor device A10 has the following functions and effects.

[0044] In the semiconductor device A10, the semiconductor element 1 has an element principal surface 1a and an element rear surface 1b. A first electrode 11 is disposed on the element principal surface 1a, and a second electrode 12 and a third electrode 13 are disposed on the element rear surface 1b. The conductive support member 3 also includes an island portion 322 to which the second electrode 12 is conductively joined. With this configuration, the element principal surface 1a, on which the second electrode 12 and the third electrode 13 are disposed, faces the island portion 322, making it possible to mount a semiconductor element 1 having an area equal to or larger than the area of ​​the island portion 322 in a planar view. Therefore, the semiconductor device A10 can increase the planar area of ​​the semiconductor element 1. This allows the semiconductor device A10 to reduce the conduction resistance, i.e., on-resistance, between the first electrode 11 and the second electrode 12 during operation of the semiconductor element 1, thereby improving the performance of the semiconductor device A10.

[0045] In the semiconductor device A10, each terminal 311 is bent in a gull-wing shape. Therefore, when the semiconductor device A10 is joined to the circuit board 90, the conductive bonding material 91 that joins each terminal 311 forms a fillet not only at the tip of the tip portion 311b but also around the boundary between the tip portion 311b and the middle portion 311c. This increases the bonding strength of each terminal 311.

[0046] When the semiconductor device A10 is mounted on a circuit board 90, the lead 32 (terminal portion 321 and island portion 322), i.e., the second electrode 12, may be grounded. For example, in a half-bridge circuit or a full-bridge circuit using the semiconductor device A10 as a low-potential arm, the lead 32, i.e., the second electrode 12, may be grounded to reduce noise. In this case, by arranging multiple thermal vias 95 (shown by phantom lines in FIG. 16 ) on the circuit board 90 below the semiconductor element 1 (island portion 322) in the thickness direction z, heat generated during operation (when power is applied) of the semiconductor element 1 can be dissipated through the multiple thermal vias 95. In contrast, in the semiconductor device described in Patent Document 1, the bonding pad portion is electrically connected to the drain electrode, making it difficult to arrange thermal vias below the semiconductor element 1 in the thickness direction z. In other words, in the semiconductor device A10, multiple thermal vias 95 can be easily arranged below the semiconductor element 1 in the thickness direction z. This improves the heat dissipation performance of the semiconductor device A10.

[0047] In the semiconductor device A10, the second electrode 12 is bonded to the island portion 322. This configuration improves the heat dissipation efficiency of heat generated from the second electrode 12 compared to a configuration in which the first electrode 11 is bonded to the island portion 322, such as the semiconductor device described in Patent Document 1. This is because the heat dissipation path can be shortened by the thickness of the semiconductor element 1. In the semiconductor device A10, the semiconductor element 1 is a MOSFET, the first electrode 11 is a drain electrode, and the second electrode 12 is a source electrode. In this case, when the semiconductor element 1 is operating (power is applied), the amount of heat generated in the second electrode 12 is greater than the amount of heat generated in the first electrode 11. In other words, the configuration of the semiconductor device A10 is preferable for improving the heat dissipation efficiency of the semiconductor element 1.

[0048] Other embodiments and modifications of the semiconductor device of the present disclosure will be described below. The configurations of the components in each embodiment and each modification can be combined with each other as long as no technical contradiction occurs.

[0049] 17 to 26 show a semiconductor device A20 according to a second embodiment. The semiconductor device A20 differs from the semiconductor device A10 in the configuration of the leads 32 and 33.

[0050] In the semiconductor device A20, the lead 32 includes a plurality of terminal portions 321. Each of the plurality of terminal portions 321 is connected to an island portion 322. Each of the plurality of terminal portions 321 protrudes from the resin side surface 232 in the first direction y. The plurality of terminal portions 321 are located on the opposite side of the sealing resin 2 from the plurality of terminal portions 311 in the first direction y. Each of the plurality of terminal portions 321 has a rectangular shape with the first direction y as the longitudinal direction in a plan view. The plurality of terminal portions 321 are arranged along the second direction x. Each of the plurality of terminal portions 321 is bent in a convex shape upward in the thickness direction z. In other words, each of the plurality of terminal portions 321 is bent in a convex shape in the thickness direction z in the direction in which the element back surface 1b faces.

[0051] Each of the terminals 321 includes a base end 321 a, a tip end 321 b, and an intermediate portion 321 c. Unless otherwise specified, the base end 321 a, the tip end 321 b, and the intermediate portion 321 c described below are common to all of the terminals 321. In the illustrated example, the base end 321 a, the tip end 321 b, and the intermediate portion 321 c each have a uniform thickness, but this is not limiting.

[0052] The base end 321a protrudes from the resin side surface 232. The base end 321a is located at approximately the same position in the thickness direction z as the island portion 322. The thickness of the base end 321a is the same as the thickness of the island portion 322, but may be different.

[0053] The tip portion 321b is located at approximately the same position as the base end portion 321a in the thickness direction z. The tip portion 321b is used when surface-mounting the semiconductor device A20 on the circuit board. The tip portion 321b extends along the first direction y in a plan view. In the illustrated example, the tip portion 321b is slightly inclined with respect to the xy plane. Alternatively, the tip portion 321b may be parallel to the xy plane.

[0054] The intermediate portion 321c is interposed between the base end portion 321a and the tip end portion 321b. The intermediate portion 321c is bent in a convex shape in the thickness direction z. In the illustrated example, the intermediate portion 321c is bent in an arch shape, but the bent shape of the intermediate portion 321c is not limited in any way.

[0055] In the semiconductor device A20, the lead 33 includes a terminal portion 331. The terminal portion 331 is connected to a pad portion 332. The terminal portion 331 protrudes from the resin side surface 232 in the first direction y. The terminal portion 331 is located on the opposite side of the sealing resin 2 from the multiple terminal portions 311 in the first direction y. In a plan view, the terminal portion 331 has a rectangular shape with the first direction y as its longitudinal direction. In a plan view, the terminal portion 331 is located on the other side in the second direction x (the side on which the resin side surface 233 is located with respect to the semiconductor element 1) from the multiple terminal portions 321. Like each terminal portion 321, the terminal portion 331 is bent upward in the thickness direction z in a convex shape. In other words, the terminal portion 331 is bent convexly in the thickness direction z in the direction in which the element back surface 1b faces.

[0056] The terminal portion 331 includes a base end portion 331 a, a tip portion 331 b, and an intermediate portion 331 c. In the illustrated example, the base end portion 331 a, the tip portion 331 b, and the intermediate portion 331 c each have a uniform thickness, but this is not limiting.

[0057] The base end 331a protrudes from the resin side surface 232. The base end 331a is located at approximately the same position in the thickness direction z as the pad portion 332. The thickness of the base end 331a is approximately the same as the thickness of the pad portion 332.

[0058] The tip portion 331b is located at approximately the same position as the base end portion 331a in the thickness direction z. The tip portion 331b is used when surface-mounting the semiconductor device A20 on the circuit board. The tip portion 331b extends along the first direction y in a plan view. In the illustrated example, the tip portion 331b is slightly inclined with respect to the xy plane. Alternatively, the tip portion 331b may be parallel to the xy plane.

[0059] The intermediate portion 331c is interposed between the base end portion 331a and the tip end portion 331b. The intermediate portion 331c is bent in a convex shape in the thickness direction z. In the illustrated example, the intermediate portion 331c is bent in an arch shape, but the bent shape of the intermediate portion 331c is not limited in any way.

[0060] In this embodiment, the pad portion 332 includes, in a plan view, a strip-shaped portion extending linearly from the base end portion 331 a and a portion bending from the strip-shaped portion in the second direction x. That is, the pad portion 332 in this embodiment is bent in an L-shape in a plan view. The bent tip portion of the pad portion 332 in this embodiment overlaps the third electrode 13 in a plan view. This bonds the pad portion 332 to the third electrode 13.

[0061] The functions and effects of the semiconductor device A20 are as follows.

[0062] In the semiconductor device A20, similar to the semiconductor device A10, the element main surface 1a on which the two electrodes, the second electrode 12 and the third electrode 13, are arranged faces the island portion 322, so that it is possible to mount a semiconductor element 1 having an area equal to or larger than the area of ​​the island portion 322 in a plan view. Therefore, similar to the semiconductor device A10, the semiconductor device A20 can increase the planar area of ​​the semiconductor element 1. As a result, similar to the semiconductor device A10, the semiconductor device A20 can reduce the on-resistance of the semiconductor element 1, thereby improving the performance of the semiconductor device A20. In addition, the semiconductor device A20 achieves the same effects as the semiconductor device A10 due to the configuration common to the semiconductor device A10.

[0063] In the semiconductor device A20, the terminal portion 331 is bent upward in a convex shape in the thickness direction z. With this configuration, similar to each terminal portion 311, the bonding strength of the terminal portion 331 can be increased when the semiconductor device A20 is mounted on the circuit board 90. This is because a fillet can be formed in the conductive bonding material 91 that bonds the terminal portion 331 around the boundary between the tip portion 331b and the middle portion 331c.

[0064] In the semiconductor device A20, each terminal portion 321 is bent upward in a convex shape in the thickness direction z. This configuration, like each terminal portion 311, can increase the bonding strength of each terminal portion 321 when the semiconductor device A20 is mounted on the circuit board 90. This is because a fillet can be formed in the conductive bonding material 91 that bonds each terminal portion 321 around the boundary between the tip portion 321b and the middle portion 321c.

[0065] 27 to 35 show a semiconductor device A21 according to a first modification of the second embodiment. The semiconductor device A21 differs from the semiconductor device A20 in the configurations of the leads 32 and 33.

[0066] 35 , each of the multiple terminal portions 321 of the lead 32 is bent in the thickness direction z in the direction in which the element main surface 1a faces (i.e., downward in the thickness direction z). That is, each terminal portion 321 of the lead 32 is bent in a gull-wing shape, similar to each terminal portion 311. Specifically, in each terminal portion 321, the base end portion 321a is located above the tip end portion 321b in the thickness direction z. The intermediate portion 321c extends downward in the thickness direction z from the base end portion 321a and connects to the tip end portion 321b.

[0067] 35 , in the lead 32, the dimension of the island portion 322 in the thickness direction z is larger than the dimension of each terminal portion 321 in the thickness direction z. Each terminal portion 321 extends from an upper edge of the island portion 322 in the thickness direction z. The lower surface of each terminal portion 321 (the surface facing downward in the thickness direction z) is located higher in the thickness direction z than the lower surface of the island portion 322. In the semiconductor device A21, with this configuration, the base end portion 321a is located higher in the thickness direction z than the tip end portion 321b.

[0068] 34 and 35 , the thickness of the island portion 322 in the semiconductor device A21 is greater than that in the semiconductor device A20. In this configuration, the difference in distance in the thickness direction z between the element main surface 1 a of the semiconductor element 1 and the upper surface of the pad portion 312 (the surface facing upward in the thickness direction z) is reduced. This allows the use of a substantially flat conductive member 41, which reduces the processing cost of the conductive member 41 and makes it easier to bond the conductive member 41.

[0069] 34 , the terminal portion 331 of the lead 33 is bent in the thickness direction z in the direction in which the element main surface 1a faces (i.e., downward in the thickness direction z). That is, the terminal portion 331 of the lead 33 is bent in a gull-wing shape, similar to each terminal portion 311. Specifically, in the terminal portion 331, the base end portion 331a is located above the tip end portion 331b in the thickness direction z. The intermediate portion 331c extends downward in the thickness direction z from the base end portion 331a and connects to the tip end portion 331b.

[0070] 34 , in the lead 33, the dimension of the pad portion 332 in the thickness direction z is larger than the dimension of each terminal portion 331 in the thickness direction z. Each terminal portion 331 extends from an upper edge of the pad portion 332 in the thickness direction z. The lower surface of each terminal portion 331 (the surface facing downward in the thickness direction z) is located higher in the thickness direction z than the lower surface of the pad portion 332. In the semiconductor device A21, with this configuration, the base end portion 321 a is located higher in the thickness direction z than the tip end portion 321 b.

[0071] In the semiconductor device A21, as shown in FIG. 31, the connection portions between the island portion 322 and each terminal portion 321, and the connection portions between the pad portion 332 and the terminal portion 331 are each covered with the sealing resin 2 and are not exposed on the resin back surface 22.

[0072] The semiconductor device A21 achieves the same effects as the semiconductor device A20. Furthermore, in the semiconductor device A21, the dimension of the island portion 322 in the thickness direction z is larger than the dimension of each terminal portion 321 in the thickness direction z. With this configuration, each terminal portion 321 can be made gull-wing shaped, just like each terminal portion 311. Furthermore, in the semiconductor device A21, the dimension of the pad portion 332 in the thickness direction z is larger than the dimension of the terminal portion 331 in the thickness direction z. With this configuration, the terminal portion 331 can be made gull-wing shaped, just like each terminal portion 311.

[0073] 36 to 40 show a semiconductor device A22 according to a second modification of the second embodiment. The semiconductor device A22 differs from the semiconductor device A21 in the configurations of the leads 32 and 33.

[0074] The lead 32 of the semiconductor device A22 includes one terminal portion 321. The terminal portion 321 of the lead 32 of the semiconductor device A22 includes a protruding portion 321d and a strip-shaped portion 321e. As shown in FIG. 38 , the protruding portion 321d protrudes from the resin side surface 232 in the first direction y. The strip-shaped portion 321e is connected to the protruding portion 321d. In a plan view, the strip-shaped portion 321e has a strip-like shape with the second direction x as its longitudinal direction. In this embodiment, the strip-shaped portion 321e extends from the tip of the protruding portion 321d (the end farthest from the resin side surface 232) outward in the second direction x of the sealing resin 2 (the direction toward which the resin side surface 234 faces). In this embodiment, the strip-shaped portion 321e includes a base end portion 321a, a tip end portion 321b, and an intermediate portion 321c, and is bent in a gull-wing shape. The configuration of the island portion 322 of the semiconductor device A22 is the same as the configuration of the island portion 322 of the semiconductor device A21.

[0075] In the semiconductor device A22, the terminal portion 331 of the lead 33 includes a protruding portion 331d and a strip-shaped portion 331e. As shown in FIG. 38 , the protruding portion 331d protrudes from the resin side surface 232 in the first direction y. The strip-shaped portion 331e is connected to the protruding portion 331d. In a plan view, the strip-shaped portion 331e has a strip-like shape with the second direction x as its longitudinal direction. In this embodiment, the strip-shaped portion 331e extends from the tip of the protruding portion 331d (the end farthest from the resin side surface 232) outward in the second direction x of the sealing resin 2 (the direction toward which the resin side surface 233 faces). In this embodiment, the strip-shaped portion 331e includes a base end 331a, a tip end 331b, and an intermediate portion 331c, and is bent in a gull-wing shape. The configuration of the pad portion 332 of the semiconductor device A22 is the same as the configuration of the pad portion 332 of the semiconductor device A21.

[0076] The semiconductor device A22 has the same effects as the semiconductor device A20. Furthermore, the dimension of the semiconductor device A22 in the first direction y can be reduced compared to the semiconductor device A20.

[0077] In the semiconductor device A22, among the multiple terminal portions 311, two terminal portions 311 located at both ends in the second direction x may have the same shape as the terminal portions 321 and 331. FIG. 41 shows another configuration example of such a semiconductor device A22. Note that FIG. 41 shows an example in which the lead 31 includes two terminal portions 311. In the semiconductor device shown in FIG. 41, the two terminal portions 311 have shapes symmetrical to the terminal portions 321 and 331, respectively, in the first direction y. The dimension of the semiconductor device shown in FIG. 41 in the first direction y can be further reduced compared to the semiconductor device A22. Unlike the example shown in FIG. 41, a terminal portion 311 having the same shape as the terminal portion 311 of the semiconductor device A22 may be appropriately added between the two terminal portions 311.

[0078] 42 to 46 show a semiconductor device A23 according to a third modification of the second embodiment. The semiconductor device A23 differs from the semiconductor device A22 in the configurations of the terminal portion 321 of the lead 32 and the terminal portion 331 of the lead 33.

[0079] In the terminal portion 321 of the lead 32 of the semiconductor device A23, the strip portion 321e extends in the second direction x from the protrusion 321d toward the inside of the sealing resin 2 (the side where the resin side surface 234 faces the protrusion 321d).

[0080] In the terminal portion 331 of the lead 33 of the semiconductor device A23, the strip portion 331e extends in the second direction x from the protrusion 331d toward the inside of the sealing resin 2 (the side where the resin side surface 233 faces the protrusion 331d).

[0081] The semiconductor device A23 has the same effects as the semiconductor device A20. Furthermore, the semiconductor device A23 can be made smaller in size in the first direction y than the semiconductor device A20, and can be made smaller in size in the second direction x than the semiconductor device A22.

[0082] In the semiconductor device A23, of the multiple terminal portions 311, two terminal portions 311 located at both ends in the second direction x may have the same shape as the terminal portions 321 and 331. FIG. 47 shows another configuration example of such a semiconductor device A23. Note that FIG. 47 shows an example in which the lead 31 includes two terminal portions 311. In the semiconductor device shown in FIG. 47, the two terminal portions 311 have shapes symmetrical to the terminal portions 321 and 331, respectively, in the first direction y. In the semiconductor device shown in FIG. 47, the dimension in the first direction y can be further reduced compared to the semiconductor device A23.

[0083] 48 to 56 show a semiconductor device A30 according to a third embodiment. The semiconductor device A30 differs from the semiconductor device A10 in the following respects. First, the lead 33 includes a plurality of terminal portions 331. Second, the plurality of terminal portions 331 are located on the same side of the sealing resin 2 as the plurality of terminal portions 311 in the first direction y.

[0084] In the semiconductor device A30, the lead 33 is formed in a flat plate shape. In the illustrated example, the lead 33 of the semiconductor device A30 includes two terminal portions 331, a pad portion 332, and a connecting portion 333. The number of terminal portions 331 is not limited to two, and may be one, or three or more.

[0085] The connecting portion 333 connects the pad portion 332 and each terminal portion 331. The connecting portion 333 branches from the pad portion 332 and connects to each terminal portion 331. In a plan view, the two terminal portions 331 protrude in the first direction y from the resin side surface 231. In a plan view, the two terminal portions 331 have a rectangular shape with the first direction y as the longitudinal direction. The two terminal portions 331 are arranged along the second direction x. In the illustrated example, the two terminal portions 331 are arranged to replace two of the multiple terminal portions 311 compared to the configuration of the semiconductor device A10.

[0086] The functions and effects of the semiconductor device A30 are as follows.

[0087] In the semiconductor device A30, similar to the semiconductor device A10, the element main surface 1a on which the two electrodes, the second electrode 12 and the third electrode 13, are arranged faces the island portion 322, so that it is possible to mount a semiconductor element 1 having an area equal to or larger than the area of ​​the island portion 322 in a planar view. Therefore, similar to the semiconductor device A10, the semiconductor device A30 can increase the planar view area of ​​the semiconductor element 1. As a result, similar to the semiconductor device A10, the semiconductor device A30 can reduce the on-resistance of the semiconductor element 1, thereby improving the performance of the semiconductor device A30. In addition, the semiconductor device A30 has a configuration in common with the semiconductor devices A10 and A20, and thus achieves the same effects as the semiconductor devices A10 and A20.

[0088] In the semiconductor device A30, the lead 33 includes at least two terminal portions 331. With this configuration, when the semiconductor device A30 is mounted on the circuit board 90, it can be bonded to the at least two terminal portions 331. This increases the bonding strength between the lead 33 and the circuit board 90. Furthermore, since the semiconductor device A30 includes at least two terminal portions 331, even if a conduction failure occurs between one of the at least two terminal portions 331 and the circuit board 90, conduction between the other terminal portion 331 and the circuit board 90 is ensured. Therefore, the semiconductor device A30 can reduce conduction failure between the lead 33 (i.e., the third electrode 13) and the circuit board 90.

[0089] 57 to 62 show a semiconductor device A40 according to a fourth embodiment. The semiconductor device A40 differs from the semiconductor device A10 in the following respects. First, the semiconductor device A40 includes a connecting member 42. Second, the third electrode 13 and the lead 33 are electrically connected by the connecting member 42.

[0090] The connection member 42 is bonded to the third electrode 13 and also to the pad portion 332 of the lead 33. This establishes electrical continuity between the third electrode 13 and the lead 33. In the illustrated example, the connection member 42 is a bonding wire. The composition of the connection member 42 includes, for example, gold or a gold alloy, aluminum or an aluminum alloy, or copper or a copper alloy. The composition of the connection member 42 is not limited to these, and other metals may also be used. Note that the connection member 42 may be a metal plate (a so-called clip member) instead of a bonding wire.

[0091] In the illustrated example, in plan view, the terminal portion 331 of the lead 33 protrudes in the first direction y from the resin side surface 231 together with each terminal portion 311. In addition, in plan view, the terminal portion 331 of the lead 33 has a rectangular shape with the first direction y as its longitudinal direction.

[0092] The functions and effects of the semiconductor device A40 are as follows.

[0093] In the semiconductor device A40, similar to the semiconductor device A10, the element main surface 1a on which the two electrodes, the second electrode 12 and the third electrode 13, are arranged faces the island portion 322, making it possible to mount a semiconductor element 1 having an area equal to or larger than the area of ​​the island portion 322 in a planar view. Therefore, similar to the semiconductor device A10, the semiconductor device A40 can increase the area of ​​the semiconductor element 1 in a planar view. This allows the semiconductor device A40 to reduce the on-resistance of the semiconductor element 1, similar to the semiconductor device A10, thereby improving the performance of the semiconductor device A40. Furthermore, the semiconductor device A40 has a common configuration with the semiconductor devices A10, A20, and A30, and thus achieves the same effects as the semiconductor devices A10, A20, and A30.

[0094] In the semiconductor device A40, the terminal portion 331 of the lead 33 has a rectangular shape in plan view with the longitudinal direction aligned with the first direction y. This configuration allows the bonding strength of the terminal portion 331 to be increased when the terminal portion 331 is mounted on the circuit board 90, compared to the semiconductor device A10.

[0095] 59 and 62 , in the semiconductor device A40, in a plan view, the joint portion 411 of the conductive member 41 overlaps the third electrode 13. This configuration can prevent damage to the semiconductor element 1 when the connection member 42 is joined to the third electrode 13.

[0096] 63 to 69 show a semiconductor device A50 according to a fifth embodiment. The semiconductor device A50 differs from the semiconductor device A10 in the configuration of the leads 32 and 33.

[0097] 63 to 69 , in the semiconductor device A50, the terminal portion 331 is exposed on the resin back surface 22 and also on the resin side surface 233. In the illustrated example, the upper surface of the terminal portion 331 is exposed from the sealing resin 2 by the recess 251, but unlike this example, the upper surface of the terminal portion 331 may be covered by the sealing resin 2. Also, in the semiconductor device A50, the entire lead 33 overlaps the sealing resin 2 in a planar view. Therefore, the entire terminal portion 331 overlaps the sealing resin 2 in a planar view. In this embodiment, the pair of resin side surfaces 233, 234 are an example of a "pair of second resin side surfaces" as defined in the claims, and in particular, the resin side surface 233 is an example of "one of the pair of second resin side surfaces" as defined in the claims.

[0098] In the semiconductor device A50, the third electrode 13 of the semiconductor element 1 is disposed near the edge of the element main surface 1a in the second direction x and near the center in the first direction y in a plan view, as shown in FIG. 67 . The semiconductor element 1 has a so-called center gate structure. Therefore, in the semiconductor device A50, the pad portion 332 is surrounded on three sides by the island portion 322 in a plan view. In the semiconductor device A50, a notch is provided in the island portion 322 in a plan view, and the pad portion 332 is disposed in the notch.

[0099] The functions and effects of the semiconductor device A50 are as follows.

[0100] In the semiconductor device A50, similar to the semiconductor device A10, the element main surface 1a on which the two electrodes, the second electrode 12 and the third electrode 13, are arranged faces the island portion 322, making it possible to mount a semiconductor element 1 having an area equal to or larger than the area of ​​the island portion 322 in a planar view. Therefore, similar to the semiconductor device A10, the semiconductor device A50 can increase the planar area of ​​the semiconductor element 1. This allows the semiconductor device A50 to reduce the on-resistance of the semiconductor element 1, similar to the semiconductor device A10, thereby improving the performance of the semiconductor device A50. Furthermore, the semiconductor device A50 has a common configuration with the semiconductor devices A10, A20, A30, and A40, and thus achieves the same effects as the semiconductor devices A10, A20, A30, and A40.

[0101] In the semiconductor device A50, the terminal portion 331 is exposed at the resin side surface 233. That is, the terminal portion 331 is disposed on a side of the semiconductor device A50 in the second direction x. With this configuration, the area occupied by the lead 33 in a plan view can be reduced, and the area occupied by each of the leads 31 and 32 in a plan view can be increased. As a result, the semiconductor device A50 can increase the current withstand capacity of each of the leads 31 and 32, and therefore it is possible to increase the current (main current between the first electrode 11 and the second electrode 12) flowing through the semiconductor element 1.

[0102] 70 to 72 show a case where a semiconductor element 1 having a smaller planar area is used in the semiconductor device A50. In the example shown in FIGS. 70 to 72, the dimension of the semiconductor element 1 in the second direction x is approximately half the dimension of the island portion 322 in the second direction x. As can be seen from the configuration shown in FIGS. 70 to 72, the semiconductor device A50 can use multiple common leads 31 to 33 even if the semiconductor elements 1 have different planar areas. Therefore, the semiconductor device A50 can share multiple leads 31 to 33 for semiconductor elements 1 having different planar areas. Furthermore, in the example shown, the conductive member 41 can also be shared. In other words, the semiconductor device A50 can improve manufacturing efficiency.

[0103] 73 to 79 show a semiconductor device A60 according to a sixth embodiment. The semiconductor device A60 differs from the semiconductor device A10 in that it includes leads 34.

[0104] The lead 34 is arranged on the opposite side of the lead 33 in the second direction x, with a part of the lead 32 sandwiched therebetween. The lead 34 includes a terminal portion 341 and a pad portion 342. The terminal portion 341 is connected to the pad portion 342.

[0105] At least a portion of the terminal portion 341 is exposed from the sealing resin 2 and protrudes from the resin side surface 232 in the first direction y. In a plan view, the terminal portion 341 is located on the opposite side of the sealing resin 2 from the terminal portions 311. In a plan view, the terminal portion 341 is located on the same side of the sealing resin 2 as the terminal portion 321. In a plan view, the terminal portion 341 is located on the opposite side of the terminal portion 331 from the terminal portion 321 in the second direction x. Therefore, the terminal portion 321 and the terminal portion 341 are individually disposed at two of the four corners of the sealing resin 2 in a plan view, opposite the side from which the terminal portion 311 protrudes. The terminal portion 341 is used as a terminal when mounting the semiconductor device A60 on the circuit board. The terminal portion 341 is an example of a "fourth terminal portion" as defined in the claims.

[0106] The pad portion 342 is located on the side of the terminal portion 341 on which the semiconductor element 1 is located in the first direction y. The upper surface of the pad portion 342 (the surface facing upward in the thickness direction z) faces the element main surface 1a of the semiconductor element 1. The lower surface of the pad portion 342 (the surface facing downward in the thickness direction z) is exposed from the resin back surface 22 and is flush with the resin back surface 22. The thickness of the pad portion 342 is approximately the same as the thickness of the terminal portion 341, but may be different. The thickness of the pad portion 332 is approximately the same as the thickness of the island portion 322, but may be different. The planar area of ​​the pad portion 342 is larger than the planar area of ​​the pad portion 332.

[0107] In this embodiment, the pad portion 342 overlaps a portion of the second electrode 12 in a plan view, and the second electrode 12 of the semiconductor element 1 is conductively bonded to the pad portion 342 by the bonding material 192. The pad portion 342 is electrically connected to the second electrode 12 via the bonding material 192. Therefore, the terminal portion 341 is electrically connected to the second electrode 12 (source electrode). Therefore, in the semiconductor device A60 shown in FIGS. 73 to 79 , each terminal portion 311 is a terminal (drain terminal) electrically connected to the first electrode 11, the terminal portion 321 and the terminal portion 341 are terminals (source terminals) electrically connected to the second electrode 12, and the terminal portion 331 is a terminal (gate terminal) electrically connected to the third electrode 13. Note that the terminal portion 341 may also be used as a detection terminal (source sense terminal) for detecting a current flowing through the second electrode 12.

[0108] The functions and effects of the semiconductor device A60 are as follows.

[0109] In the semiconductor device A60, similar to the semiconductor device A10, the element main surface 1a on which the two electrodes, the second electrode 12 and the third electrode 13, are arranged faces the island portion 322, making it possible to mount a semiconductor element 1 having an area equal to or larger than the area of ​​the island portion 322 in a planar view. Therefore, similar to the semiconductor device A10, the semiconductor device A60 can increase the planar area of ​​the semiconductor element 1. This allows the semiconductor device A60 to reduce the on-resistance of the semiconductor element 1, similar to the semiconductor device A10, thereby improving the performance of the semiconductor device A60. Furthermore, the semiconductor device A60 has a common configuration with the semiconductor devices A10, A20, A30, A40, and A50, and thus achieves the same effects as the semiconductor devices A10, A20, A30, A40, and A50.

[0110] 80 to 82 show a case where a semiconductor element 1 having a smaller area in a plan view is used in the semiconductor device A60. In the examples shown in FIGS. 80 to 82, the semiconductor element 1 does not overlap the lead 33 (pad portion 332) in a plan view. Furthermore, the third electrode 13 of the semiconductor element 1 overlaps the pad portion 342 in a plan view. In the examples shown in FIGS. 80 to 82, the third electrode 13 is conductively joined to the pad portion 342 by a bonding material 193. That is, in the examples shown in FIGS. 80 to 82, the lead 34 (terminal portion 341) is conductively connected to the third electrode 13 (gate electrode). 80 to 82, each terminal portion 311 is a terminal (drain terminal) that is conductive to the first electrode 11, terminal portion 321 is a terminal (source terminal) that is conductive to the second electrode 12, terminal portion 341 is a terminal (gate terminal) that is conductive to the third electrode 13, and terminal portion 331 is a terminal that is not conductive to the semiconductor element 1. As can be seen from the configurations shown in FIGS. 80 to 82, in the semiconductor device A60, multiple common leads 31 to 34 can be used even if the semiconductor elements 1 have different planar areas. Therefore, in the semiconductor device A60, multiple leads 31 to 34 can be shared for semiconductor elements 1 that have different planar areas.

[0111] In the semiconductor device A60, the semiconductor element 1 is disposed near the center of the island portion 322 in a plan view. This configuration is preferable for increasing the efficiency of heat dissipation from the semiconductor element 1. In particular, as shown in FIGS. 80 to 82, when the area of ​​the semiconductor element 1 in a plan view is small, heat dissipation performance decreases. Therefore, the semiconductor device A60 can suppress the decrease in heat dissipation performance that accompanies the reduction in area of ​​the semiconductor element 1.

[0112] In the semiconductor device A60 shown in FIGS. 73 to 79 , the second electrode 12 and the pad portion 342 are electrically connected to each other by a bonding material 192. However, the second electrode 12 and the pad portion 342 may be insulated from each other. FIG. 83 shows a semiconductor device A61 according to such a modification. In the semiconductor device A61, an insulating member 199 is interposed between the second electrode 12 and the pad portion 342. The insulating member 199 may be non-adhesive or adhesive. As can be seen from the modification shown in FIG. 83 , the terminal portion 341 (lead 34) may be a terminal electrically connected to the second electrode 12, or may be a terminal not electrically connected to the semiconductor element 1.

[0113] The semiconductor device according to the present disclosure is not limited to the above-described embodiments. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways. For example, the semiconductor device according to the present disclosure includes embodiments according to the following supplementary notes. Supplementary Note 1. The semiconductor device comprises: a semiconductor element (1) having a first electrode (11), a second electrode (12), and a third electrode (13), and wherein the first electrode (11) and the second electrode (12) are on / off controlled in response to a drive signal input to the third electrode (13); a conductive support member (3) on which the semiconductor element (1) is mounted; and a sealing resin (2) covering a part of the conductive support member (3) and the semiconductor element (1), wherein the conductive support member (3) includes a first terminal portion (311) exposed from the sealing resin (2) and conducting to the first electrode (11), a second terminal portion (321) exposed from the sealing resin (2) and conducting to the second electrode (12), a third terminal portion (331) exposed from the sealing resin (2) and conducting to the third electrode (13), and an island portion (322) to which the second electrode (12) is conductively joined. Supplementary Note 2. The semiconductor device (A10, A20 to A23, A30, A40, A50, A60, A61) includes a semiconductor element (1) having an element main surface (1a) and an element back surface (1b) facing opposite each other in a thickness direction (z) of the sealing resin (2), the first electrode (11) is disposed on the element back surface (1b), the second electrode (12) and the third electrode (13) are each disposed on the element main surface (1a), the sealing resin (2) has a first resin side surface (231) facing one side of a first direction (y) perpendicular to the thickness direction (z), and the first terminal portion (311) protrudes from the first resin side surface (231) when viewed in the thickness direction (z) and is bent in the direction in which the element main surface (1a) faces in the thickness direction (z) (downward in the thickness direction z). The semiconductor device (A10, A20 to A23, A30, A40, A60) according to Appendix 1, wherein the third terminal portion (331) protrudes from the sealing resin (2) when viewed in the thickness direction (z). Appendix 3. The semiconductor device (A20, A21, A30, A40) according to Appendix 2, wherein the third terminal portion (331) is strip-shaped with the first direction (y) as a longitudinal direction when viewed in the thickness direction (z).Supplementary Note 4. The semiconductor device (A21, A30) according to Supplementary Note 3, wherein the third terminal portion (331) is bent in the thickness direction (z) in a direction in which the element main surface (1a) faces. Supplementary Note 5. The semiconductor device (A21, A30) according to Supplementary Note 4, wherein the conductive support member (3) includes a first pad portion (332) connected to the third terminal portion (331). Supplementary Note 6. The semiconductor device (A21) according to Supplementary Note 5, wherein the third electrode (13) is conductively joined to the first pad portion (332). Supplementary Note 7. The semiconductor device (A21) according to Supplementary Note 5 or Supplementary Note 6, wherein the dimension in the thickness direction (z) of each of the island portion (322) and the first pad portion (332) is larger than the dimension in the thickness direction (z) of each of the second terminal portion (321) and the third terminal portion (331). Supplementary Note 8. The semiconductor device (A40) according to Appendix 5 further includes a connection member (42) that electrically connects the third electrode (13) and the first pad portion (332). Appendix 9. The semiconductor device (A20) according to Appendix 3, wherein the second terminal portion (321) and the third terminal portion (331) are bent convexly in the thickness direction (z) toward the element back surface (1b). Appendix 10. The semiconductor device (A30, A40) according to Appendix 3, wherein the third terminal portion (331) protrudes from the first resin side surface (231) together with the first terminal portion (311). Appendix 11. The semiconductor device (A30) according to Appendix 10 further includes an additional third terminal portion (331) that is electrically connected to the third terminal portion (331). Appendix 12. The semiconductor device (A22, A23) according to Appendix 2, wherein each of the second terminal portion (321) and the third terminal portion (331) includes a protruding portion (321d, 331d) protruding from the sealing resin (2) in the first direction (y), and a strip-shaped portion (321e, 331e) connected to the protruding portion (321d, 331d) and having a strip-like shape whose longitudinal direction is a second direction (x) perpendicular to the thickness direction (z) and the first direction (y) when viewed in the thickness direction (z). Appendix 13. The semiconductor device (A23) according to Appendix 12, wherein in each of the second terminal portion (321) and the third terminal portion (331), the strip-shaped portion (321e, 331e) extends from the protruding portion (321d, 331d) inward of the sealing resin (2) in the second direction (x).Supplementary Note 13-1. The semiconductor device (A22) according to Supplementary Note 12, wherein in each of the second terminal portion (321) and the third terminal portion (331), the strip-shaped portion (321e, 331e) extends from the protrusion (321d, 331d) outward from the sealing resin (2) in the second direction (x). Supplementary Note 14. The semiconductor device (A60, A61) according to Supplementary Note 2, further comprising a fourth terminal portion (341) spaced apart from each of the first terminal portion (311), the second terminal portion (321), and the third terminal portion (331). Supplementary Note 15. The semiconductor device (A60) according to Supplementary Note 14, wherein the conductive support member (3) includes a first pad portion (332) connected to the third terminal portion (331), and the third electrode (13) is conductively joined to the first pad portion (332). Supplementary Note 15-1. The semiconductor device (A60) according to Appendix 14, wherein the conductive support member (3) includes a third pad portion (342) connected to the fourth terminal portion (341), and the third electrode (13) is conductively joined to the third pad portion (342). Appendix 16. The semiconductor device (A60) according to Appendix 14 or Appendix 15, wherein the third terminal portion (331) and the fourth terminal portion (341) are individually arranged at two corners of the sealing resin (2) opposite to the side from which the first terminal portion (311) protrudes, among the four corners of the sealing resin (2) as viewed in the thickness direction (z). Appendix 17. The semiconductor device (A50) according to Appendix 1, wherein the third terminal portion (331) entirely overlaps the sealing resin (2) as viewed in the thickness direction (z). Appendix 18. The semiconductor device (A50) according to Appendix 17, wherein the sealing resin (2) has a pair of second resin side surfaces (233, 234) facing opposite each other in a second direction (x) perpendicular to the thickness direction (z) and the first direction (y), and the third terminal portion (331) is exposed on one (233) of the pair of second resin side surfaces (233, 234). Appendix 19. The semiconductor device (A50) according to Appendix 18, wherein the conductive support member (3) includes a first pad portion (332) connected to the third terminal portion (331), and the first pad portion (332) is surrounded on three sides by the island portion (322) as seen in the thickness direction (z).Supplementary Note 20. The semiconductor device (A10, A20 to A23, A30, A40, A50, A60, A61) according to any one of Supplementary Note 1 to Supplementary Note 19, further comprising a conductive member (41) conductively joined to the first electrode (11), the conductive support member (3) including a second pad portion (312) connected to the first terminal portion (311), and the conductive member (3) is conductively joined to the second pad portion (312). Supplementary Note 20-1. The semiconductor device (A10, A20, A30, A40, A50, A60, A61) according to Supplementary Note 20, wherein the conductive member (41) is bent in the thickness direction (z). Supplementary Note 20-2. A semiconductor device (A21, A22, A23) according to Supplementary Note 20, wherein a surface of the conductive member (41) facing in the same direction as the element back surface (1b) in the thickness direction (z) (a surface facing downward in the thickness direction z) is flat. Supplementary Note 21. A semiconductor device (A10, A20 to A23, A30, A40, A50, A60, A61) according to any one of Supplementary Notes 1 to 20, wherein a surface of the island portion (322) facing in the same direction as the element main surface (1a) in the thickness direction (z) (a surface facing downward in the thickness direction z) is exposed from the sealing resin (2). Supplementary Note 22. The semiconductor device (A10, A20 to A23, A30, A40, A50, A60, A61) according to any one of Supplementary Notes 1 to 21, wherein the semiconductor element (1) is a MOSFET, the first electrode (11) is a drain electrode, the second electrode (12) is a source electrode, and the third electrode (13) is a gate electrode. Supplementary Note 23. The semiconductor device (A10, A20 to A23, A30, A40, A50, A60, A61) according to any one of Supplementary Notes 1 to 22, wherein the sealing resin (2) has a third resin side surface (232) facing the other side of the first direction (y), and the second terminal portion (321) protrudes from the third resin side surface (232) when viewed in the thickness direction. Supplementary Note 24. A component comprising a circuit board (90) on which the semiconductor device according to any one of Supplementary Note 1 to Supplementary Note 23 is mounted, the circuit board (90) including at least one thermal via (95), the at least one thermal via (95) overlapping the semiconductor device when viewed in the thickness direction (z).Supplementary Note 25. A power conversion device comprising the semiconductor device according to Supplementary Note 1 to Supplementary Note 23. Supplementary Note 25-1. The power conversion device according to Supplementary Note 25, which is mounted on a vehicle and converts power supplied from a power supply facility into power suitable for charging a storage battery of the vehicle and supplies the power to the storage battery. Supplementary Note 25-2. The power conversion device according to Supplementary Note 25, which is mounted on a vehicle and converts and outputs power stored in a storage battery of the vehicle.

[0114] A10, A20 to A23, A30 to A60, A61: semiconductor device 1: semiconductor element 1a: element main surface 1b: element back surface 11: first electrode 12: second electrode 13: third electrode 192, 193: bonding material 199: insulating member 2: sealing resin 21: resin main surface 22: resin back surface 231 to 234: resin side surface 251, 252: recess 3: conductive support member 31: lead 311: terminal portion 311a: base end portion 311b: tip portion 311c: middle portion 312: pad portion 32: lead 321: terminal portion 321a: base end portion 321b: tip portion 321c: middle portion 321d: protrusion portion 321e: strip portion 322: island portion 323: extension portion 33: lead 331: Terminal portion 331a: Base end portion 331b: Tip portion 331c: Middle portion 331d: Projection portion 331e: Strip portion 332: Pad portion 333: Linking portion 34: Lead 341: Terminal portion 342: Pad portion 41: Conductive member 411, 412: Joint portion 413: Linking portion 419: Bonding material 42: Connection member 90: Circuit board 91: Conductive bonding material 95: Thermal via

Claims

1. A semiconductor device comprising: a semiconductor element having a first electrode, a second electrode, and a third electrode, wherein an on / off control is performed between the first electrode and the second electrode in accordance with a drive signal input to the third electrode; a conduction support member on which the semiconductor element is mounted; and a sealing resin that covers a part of the conduction support member and the semiconductor element, wherein the conduction support member includes a first terminal portion that is exposed from the sealing resin and conducts to the first electrode, a second terminal portion that is exposed from the sealing resin and conducts to the second electrode, a third terminal portion that is exposed from the sealing resin and conducts to the third electrode, and an island portion to which the second electrode is conductively joined, the semiconductor element has an element front surface and an element back surface facing opposite sides in the thickness direction of the sealing resin, the first electrode is disposed on the element back surface, each of the second electrode and the third electrode is disposed on the element front surface, the sealing resin has a first resin side surface facing one of a first direction orthogonal to the thickness direction, and the first terminal portion protrudes from the first resin side surface as viewed in the thickness direction and bends in a direction in which the element front surface faces in the thickness direction.

2. The semiconductor device according to claim 1, wherein the third terminal portion protrudes from the sealing resin as viewed in the thickness direction.

3. The semiconductor device according to claim 2, wherein the third terminal portion is strip-shaped with the first direction as the longitudinal direction as viewed in the thickness direction.

4. The semiconductor device according to claim 3, wherein the third terminal portion bends in a direction in which the element front surface faces in the thickness direction.

5. The semiconductor device according to claim 4, wherein the conduction support member includes a first pad portion connected to the third terminal portion.

6. The semiconductor device according to claim 5, wherein the third electrode is conductively joined to the first pad portion.

7. The semiconductor device according to claim 5 or 6, wherein the dimension of each of the island portion and the first pad portion in the thickness direction is larger than the dimension of each of the second terminal portion and the third terminal portion in the thickness direction.

8. The semiconductor device according to claim 5, further comprising a connection member that electrically connects the third electrode and the first pad portion.

9. The semiconductor device according to claim 3, wherein the second terminal portion and the third terminal portion bend convexly in a direction in which the element back surface faces in the thickness direction.

10. The semiconductor device according to claim 3, wherein the third terminal portion protrudes from the first resin side surface together with the first terminal portion.

11. The semiconductor device according to claim 10, further comprising an additional third terminal portion electrically connected to the third terminal portion.

12. In each of the second terminal portion and the third terminal portion, each includes a protruding portion protruding from the encapsulating resin in the first direction, and a strip-shaped portion connected to the protruding portion and having a longitudinal direction in a second direction orthogonal to the thickness direction and the first direction when viewed in the thickness direction. The semiconductor device according to claim 2.

13. The semiconductor device according to claim 12, wherein in each of the second terminal portion and the third terminal portion, the strip-shaped portion extends inward from the protruding portion into the encapsulating resin in the second direction.

14. The semiconductor device according to claim 2, further comprising a fourth terminal portion spaced apart from each of the first terminal portion, the second terminal portion, and the third terminal portion.

15. The semiconductor device according to claim 14, wherein the conductive support member includes a first pad portion connected to the third terminal portion, and the third electrode is electrically connected to the first pad portion.

16. The semiconductor device according to claim 14, wherein each of the third terminal portion and the fourth terminal portion is individually disposed at two corner portions among the four corners of the encapsulating resin when viewed in the thickness direction, on the side opposite to the side where the first terminal portion protrudes.

17. The semiconductor device according to claim 1, wherein the third terminal portion, when viewed in the thickness direction, entirely overlaps the encapsulating resin.

18. The encapsulating resin has a pair of second resin side surfaces facing opposite sides in a second direction orthogonal to the thickness direction and the first direction, and the third terminal portion is exposed on one of the pair of second resin side surfaces. The semiconductor device according to claim 17.

19. The conductive support member includes a first pad portion connected to the third terminal portion, and when viewed in the thickness direction, three sides of the first pad portion are surrounded by the island portion. The semiconductor device according to claim 18.

20. Further comprising a conductive member electrically connected to the first electrode, the conductive support member includes a second pad portion connected to the first terminal portion, and the conductive member is electrically connected to the second pad portion. The semiconductor device according to any one of claims 1 to 19.

21. The semiconductor device according to any one of claims 1 to 19, wherein a surface facing the same direction as the element main surface in the thickness direction of the island portion is exposed from the encapsulating resin.

22. The semiconductor device according to any one of claims 1 to 19, wherein the semiconductor element is a MOSFET, the first electrode is a drain electrode, the second electrode is a source electrode, and the third electrode is a gate electrode.

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