Light-emitting module

Abstract

The present invention provides a light-emitting module comprising at least one light-emitting device, which includes: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; and an electron blocking layer disposed between the active layer and the second conductive semiconductor layer, wherein the electron blocking layer includes at least one shading area that is thinner than the adjacent area.

Description

Light-emitting module

[0001] The present invention relates to a light-emitting module including a light-emitting element.

[0002] A light-emitting diode (LED) is a type of light-emitting device that emits light when current is applied. Recently, LEDs have been widely used in various fields, such as display devices, vehicle lamps, and general lighting. Furthermore, LEDs boast long lifespans, low power consumption, and fast response times. Taking full advantage of these advantages, they are rapidly replacing existing light sources. For example, a display device utilizing LEDs can be obtained by forming structures of individually grown red (R), green (G), and blue (B) light-emitting diodes (LEDs) on a final substrate.

[0003] Specifically, a light-emitting diode is formed by growing epitaxial layers on a substrate, and includes an N-type semiconductor layer, a P-type semiconductor layer, and an active layer interposed therebetween. An N-electrode pad is formed on the N-type semiconductor layer, and a P-electrode pad is formed on the P-type semiconductor layer, so that the light-emitting diode is driven by being electrically connected to an external power source through the electrode pads. At this time, current can flow from the P-electrode pad through the semiconductor layers to the N-electrode pad, and light generated through recombination of electrons and holes in the active layer can be emitted.

[0004] Display devices typically use a mixture of blue, green, and red to produce a variety of colors. To produce various images, display devices comprise multiple pixels, each of which has blue, green, and red sub-pixels. The colors of these sub-pixels determine the color of a specific pixel, and the combination of these pixels produces an image.

[0005] Recently, there have been ongoing efforts to utilize ultra-small micro LEDs, which are 1 / 10 the size of existing mini LEDs, in displays. Micro LEDs are LEDs with a device size of less than 100 μm in both width and length. However, for micro LEDs to be applied to small display devices, the device size needs to be reduced to 5 to 10 μm. Displays using micro LEDs have superior performance compared to displays using existing LED backlights in almost all aspects, including contrast ratio, response speed, color reproducibility, viewing angle, brightness, maximum resolution, and lifespan, because the LEDs themselves emit light.

[0006] The purpose of the present invention is to provide a light-emitting module capable of stably mounting a light-emitting element on a substrate without damage or tilting of the light-emitting element, thereby reducing the defect rate.

[0007] The purpose of the present invention is to provide a light-emitting module that can effectively release heat generated when a light-emitting element is driven by particles by mounting the light-emitting element on a substrate using a spacer including particles, and prevent the light-emitting element from being damaged by heat.

[0008] The purpose of the present invention is to provide a light-emitting module that can effectively release heat generated when a light-emitting element is driven by particles by mounting the light-emitting element on a substrate using a spacer including particles, and prevent the light-emitting element from being peeled off or damaged by heat.

[0009] The purpose of the present invention is to provide a light-emitting module having improved performance and reliability and high light extraction efficiency.

[0010] A light-emitting module according to one embodiment of the present invention includes a substrate, a plurality of light-emitting elements, and a spacer disposed between one surface of the substrate and the plurality of light-emitting elements.

[0011] In one embodiment, the spacer may comprise a plurality of particles.

[0012] In one embodiment, the diameter of the plurality of particles may be smaller than the maximum thickness of the semiconductor layer of the light-emitting element.

[0013] In one embodiment, the spacer may further include a polymer layer surrounding the plurality of particles.

[0014] In one embodiment, the upper surface of the polymer layer between the plurality of light-emitting elements may coincide with the upper surface of the light-emitting element.

[0015] In one embodiment, the plurality of particles may be positioned below the spacer.

[0016] In one embodiment, the spacing between the plurality of particles may be different from each other.

[0017] In one embodiment, the diameters of the plurality of particles may be different from each other.

[0018] In one embodiment, with respect to an imaginary line passing through the midpoint between the upper surface of the light-emitting element on one surface of the substrate, the centers of the plurality of particles may be located on or below the imaginary line.

[0019] In one embodiment, the substrate may include an electrode layer including a substrate electrode electrically connected to the electrode pad of the light-emitting element, a main insulating layer disposed below the electrode layer, and a cover layer disposed above the electrode layer.

[0020] In one embodiment, the cover layer may include vertically penetrating openings through which the plurality of light-emitting elements are arranged.

[0021] In one embodiment, two or more light emitting elements may be arranged in the opening.

[0022] In one embodiment, the thickness of the cover layer may be smaller than the diameter of the particle.

[0023] In one embodiment, on the cover layer, the diameter of the particle may be greater than the vertical distance from the particle to the upper surface of the polymer layer.

[0024] In one embodiment, the light emitting element has a rectangular shape having a long side and a short side in a plane, and the two or more light emitting elements can be arranged spaced apart from each other along the long side direction within the opening.

[0025] In one embodiment, the particles disposed on the upper portion of the cover layer may be positioned higher than the particles positioned between the light-emitting elements within the opening.

[0026] In one embodiment, the thermal expansion coefficient of the particle may be smaller than the thermal expansion coefficient of the electrode pad of the light emitting element.

[0027] In one embodiment, the particle may include a core layer and an outer layer surrounding the core layer and having a material different from the core layer.

[0028] In one embodiment, the particle may be a sphere having a center point.

[0029] In one embodiment, the outer surface of the particle may have unevenness formed.

[0030] In one embodiment, some of the plurality of particles are disposed between the electrode pad of the light-emitting element and one surface of the substrate, and the electrode pad may have a concave surface formed on a surface facing the substrate.

[0031] In one embodiment, a step structure may be formed on the concave surface.

[0032] In one embodiment, the light-emitting element may include a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode pad disposed on an exposed area of ​​the first conductive semiconductor layer exposed by etching the second conductive semiconductor layer and the active layer, and a second electrode pad disposed on the second conductive semiconductor layer.

[0033] In one embodiment, the thickness of the spacer between the first electrode pad and one surface of the substrate may be thicker than the thickness of the spacer between the second electrode pad and one surface of the substrate.

[0034] The present invention can provide a light-emitting module capable of stably mounting a light-emitting element on a substrate without damage or tilting of the light-emitting element, thereby reducing the defect rate.

[0035] The present invention provides a light-emitting module that can effectively release heat generated when a light-emitting element is driven by particles by mounting the light-emitting element on a substrate using a spacer including particles, and prevent the light-emitting element from being damaged by heat.

[0036] The present invention provides a light-emitting module that can effectively release heat generated when a light-emitting element is driven by particles by mounting the light-emitting element on a substrate using a spacer including particles, and prevent the light-emitting element from being peeled off or damaged by heat.

[0037] The present invention can provide a light-emitting module with improved performance and reliability and high light extraction efficiency.

[0038] FIG. 1 is a plan view showing a light-emitting module according to one embodiment of the present invention.

[0039] Fig. 2 is a cross-sectional view taken along the AA′ direction of Fig. 1.

[0040] Fig. 3 is a cross-sectional view taken along the BB′ direction of Fig. 1.

[0041] Figure 4 is a cross-sectional view showing the particles of Figures 2 and 3.

[0042] Fig. 5 is a cross-sectional view showing a light-emitting element arranged in the light-emitting module of Fig. 1.

[0043] Fig. 6 is a cross-sectional view showing a modified example of the electrode pad of the light emitting element of Fig. 5.

[0044] Fig. 7 is a cross-sectional view showing a part of a light-emitting module according to another embodiment of the present invention.

[0045] FIG. 8 is a plan view showing a portion of a light-emitting module according to another embodiment of the present invention.

[0046] In the following description, for purposes of explanation, numerous specific details are set forth to provide a thorough understanding of various embodiments or implementations of the present disclosure. As used herein, the terms "embodiment" and "implementation" are interchangeable to refer to non-limiting examples of devices or methods that utilize one or more of the inventive concepts disclosed herein. However, it will be apparent that various embodiments may be practiced without utilizing these specific details or using one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form to avoid unnecessarily obscuring the various embodiments. Furthermore, while the various embodiments may vary from one another, they are not necessarily exclusive. For example, specific features, configurations, and characteristics of an embodiment may be utilized or implemented in other embodiments without departing from the scope of the inventive concepts.

[0047] Unless otherwise specified, the illustrated embodiments should be understood to provide exemplary features of varying details of some ways in which the concepts of the present invention may be practically implemented. Therefore, unless otherwise specified, the features, components, modules, layers, membranes, panels, regions, and / or aspects (hereinafter, individually or collectively referred to as "elements") of the various embodiments may be differently combined, separated, interchanged, and / or rearranged without departing from the scope of the concepts of the present invention.

[0048] The use of cross-hatching and / or shading in the accompanying drawings is generally provided to clarify boundaries between adjacent elements. As such, the presence or absence of cross-hatching or shading, unless expressly stated, does not imply or indicate any preference or requirement for any particular material, material properties, dimensions, proportions, commonality between the illustrated elements, and / or any other features, properties, or characteristics of the elements. Furthermore, in the accompanying drawings, the dimensions and relative sizes of elements may be exaggerated for clarity and / or illustrative purposes. When embodiments are implemented differently, certain process sequences may be performed differently from the illustrated sequence. For example, two consecutively illustrated processes may be performed substantially simultaneously or in a reverse order from the illustrated sequence. Furthermore, like reference numerals designate like elements.

[0049] When an element, such as a layer, is referred to as being "on," "connected to," or "joined to" another element or layer, the element may be directly on, connected to, or joined to the other element or layer, or there may be intervening elements or layers present. However, when an element or layer is referred to as being "directly on," "directly connected to," or "directly joined to" another element or layer, there are no intervening elements or layers present. For this purpose, the term "connected" may refer to physical, electrical, and / or fluidic connections, with or without intervening elements. Furthermore, the DR1-axis, DR2-axis, and DR3-axis are not limited to the three axes of a Cartesian coordinate system, such as the x, y, and z-axes, and may be interpreted in a broader sense. For example, the DR1-axis, DR2-axis, and DR3-axis may be perpendicular to one another, or may represent different directions that are not perpendicular to one another. For purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as, for example, XYZ, XYY, YZ, and ZZ. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items.

[0050] Although the terms "first," "second," and the like may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, the first element discussed below may be referred to as the second element without departing from the teachings of the present disclosure.

[0051] Spatially relative terms such as "beneath," "beneath," "directly beneath," "lower," "above," "upper," "above," "higher than," "side" (as in, for example, a "side wall"), and the like may be used for descriptive purposes and thereby to describe the relationship of one element to other element(s) as depicted in the drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the drawings. For example, if the device in the drawings were turned over, an element described as "beneath" or "beneath" another element or feature would then be oriented "above" the other element or feature. Therefore, the exemplary term "beneath" can encompass both orientations above and below. Furthermore, the device can be oriented differently (e.g., rotated 90° or oriented in other orientations), and thus the spatially relative descriptors used herein can also be interpreted accordingly.

[0052] The terminology used herein is for the purpose of describing particular embodiments and is not limiting. The singular forms "a," "an," and "the" as used herein also include the plural forms unless the context clearly dictates otherwise. Furthermore, the terms "comprises," "comprising," "includes," and / or "comprising" as used herein specify the presence of stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. Furthermore, the terms "substantially," "about," and other similar terms as used herein are used as terms of approximation rather than degrees, and as such, are used to describe inherent deviations from measured, calculated, and / or provided values ​​that would be recognized by one of ordinary skill in the art.

[0053] Various embodiments are described below with reference to cross-sectional and / or exploded illustrations, which are schematic illustrations of idealized embodiments and / or intermediate structures. As such, variations from the shapes of the illustrated drawings may be expected, for example, as a result of manufacturing techniques and / or tolerances. Therefore, the embodiments disclosed herein should not necessarily be construed as limited to the shapes of specific illustrated regions, but should be construed to include, for example, deviations in shape resulting from manufacturing. In this way, the regions depicted in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of regions of the device, and as such, are not necessarily intended to have a limiting meaning.

[0054] As is conventional in the art, some embodiments may be illustrated and described in the accompanying drawings in terms of functional blocks, units, and / or modules. Those skilled in the art will appreciate that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, wiring circuits, memory elements, and wiring connections formed using semiconductor-based or other manufacturing techniques. When the blocks, units, and / or modules are implemented by microprocessors or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and optionally, may be driven by firmware and / or software. Furthermore, each block, unit, and / or module may be implemented by dedicated hardware, or by a combination of dedicated hardware for performing some functions and processors (e.g., one or more programmed processors and associated circuitry) for performing other functions. Additionally, the blocks, units, and / or modules of some embodiments may be physically separated into two or more interacting and individual blocks, units, and / or modules without departing from the scope of the present invention. Additionally, the blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the scope of the present invention.

[0055] Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries, such as terms defined in commonly used dictionaries, should be interpreted to have a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealistic or overly formal sense unless explicitly defined herein.

[0056] Hereinafter, the light emitting module of the present invention will be described in detail through drawings.

[0057] Referring to FIGS. 1 and 2, the present invention can provide a light-emitting module (100) including a substrate (110), a plurality of light-emitting elements (120a, 120b, 120c), and a spacer (130) disposed between one surface of the substrate (110) and the plurality of light-emitting elements (120a, 120b, 120c). Hereinafter, a preferred embodiment of the present invention will be described in more detail with reference to the attached drawings.

[0058] The above substrate (110) is a substrate on which light-emitting elements (120a, 120b, 120c) are mounted on one surface, and is not limited to a specific type as long as it can support the light-emitting elements (120a, 120b, 120c), such as a circuit board, a lead frame, a flexible substrate, a transparent substrate, etc. The above substrate (110) can support a plurality of light-emitting elements (120a, 120b, 120c) and be electrically connected to a plurality of light-emitting elements (120a, 120b, 120c).

[0059] The above substrate (110) may have a flat shape, but is not limited thereto.

[0060] For example, the substrate (110) may be composed of a PCB (Printed Circuit Board). The PCB may be, for example, an FR4 PCB having excellent properties such as high strength, flame retardancy, and chemical resistance. Alternatively, the substrate (100) may be at least one of PMMA (Polymethyl Methacrylate), PC (Polycarbonate) resin, COP (Cyclo Olefin Polymer), acrylic resin, PE (Polyethylene), epoxy resin, and glass, which have light-transmitting properties. Alternatively, the substrate (100) may be formed of a material such as PET or PVB, which have bending properties. Alternatively, the substrate (100) may be a Metal PCB (Metal Printed Circuit Board) having excellent heat dissipation performance and good thermal conductivity. More specifically, the PCB may include Cu, Zn, Au, Ni, Al, Mg, Cd, Be, W, Mo, Si, and Fe as a base metal, or an alloy of at least one of these. However, it is not limited to this, and various PCBs can be used depending on the product characteristics.

[0061] The refractive index of the substrate (110) may be different from the refractive index of the first conductive semiconductor layer (121), the second conductive semiconductor layer (122), or the active layer (123) of the light-emitting element (120a, 120b, 120c). The substrate (110) may be transparent to light generated from the light-emitting element (120a, 120b, 120c) or may be transparent to light generated from the outside. The intensity of light sensed in the direction of one surface of the substrate (110) may have a different value from the intensity of light sensed in the other surface (the opposite surface of the one surface) of the substrate (110). The light emission pattern in the direction of one surface of the substrate (110) may be different from the light emission pattern in the other surface (the opposite surface of the one surface) of the substrate (110). The light beam angle on one side of the substrate (110) may be different from the light beam angle on the other side (the opposite side of the one side) of the substrate (110). The surface uniformity (or roughness, RMS) on one side of the substrate (110) may be different from the surface uniformity (or roughness, RMS) on the other side. Accordingly, the optical characteristics on one side of the substrate (110) and the optical characteristics on the other side can be controlled differently.

[0062] The above substrate (110) can be formed into a single-layer or multi-layer structure, and can be formed into various thicknesses as needed.

[0063] For example, when the substrate (110) is formed in a multilayer structure, the substrate (110) may include an electrode layer (112) electrically connected to the light-emitting elements (120a, 120b, 120c) and a main insulating layer (114) disposed on one side of the electrode layer (112). The substrate (110) may additionally include an electrode layer disposed on one side of the main insulating layer (114).

[0064] The above electrode layer (112) may include a substrate electrode layer arranged on a surface facing the light-emitting element (120a, 120b, 120c) and a wiring layer under the substrate electrode layer.

[0065] The above substrate electrode layer may include a substrate electrode (E) electrically connected to the light emitting elements (120a, 120b, 120c). The substrate electrode layer may include a substrate electrode (E) and an insulating layer (P) disposed between the substrate electrodes (E). The substrate electrode (E) may be an individual electrode individually provided for each of the light emitting elements (120a, 120b, 120c) or a common electrode commonly connected to a plurality of light emitting elements (120a, 120b, 120c).

[0066] The above wiring layer may include an insulating layer (112a) disposed under a substrate electrode (E), a metal wiring (122b) provided in the insulating layer (112a), and a connection electrode (112c) connecting the substrate electrode (E) and the metal wiring (112b) through a via hole. The substrate (110) may be formed of a glass fiber reinforced epoxy resin laminate made of FR4 material. When the substrate (110) is formed in a multilayer structure, complex wiring can be overlapped vertically, thereby increasing the circuit integration.

[0067] The above insulating layer (114) may be made of various materials as a main insulating layer, and may be made of glass, for example.

[0068] On the upper surface of the substrate (110), a plurality of light-emitting elements (120a, 120b, 120c) may be arranged in various patterns. For example, three light-emitting elements (120a, 120b, 120c) that respectively emit red, green, and blue light may be arranged at regular intervals to form a group (G) or pixel (PX). The plurality of light-emitting elements (120a, 120b, 120c) may reproduce light of a wide color gamut using red, green, and blue light. Alternatively, an example in which red, green, and blue light-emitting diodes are vertically stacked on a single light-emitting element (120a, 120b, 120c) to form a group (G) or pixel is also possible. In addition, the light emitting elements (120a, 120b, 120c) may be composed of diode elements that emit light of the same color range, and for example, the difference in dominant wavelength between adjacent light emitting elements (120a, 120b, 120c) may be composed of light emitting elements (120a, 120b, 120c) of about 2 nm to 15 nm, thereby enabling more vivid colors to be realized.

[0069] The light emitting elements (120a, 120b, 120c) may have a rectangular shape having long sides and short sides on a plane. For example, referring to FIG. 1, the light emitting elements (120a, 120b, 120c) may have long sides parallel to a first direction and short sides parallel to a second direction perpendicular to the first direction.

[0070] When three light-emitting elements (120a, 120b, 120c) constitute one group (G) or pixel (PX), the light-emitting elements (120a, 120b, 120c) can be arranged along the long-side direction (first direction). Accordingly, by arranging the short sides of the light-emitting elements (120a, 120b, 120c) to face each other so that the length or area of ​​the facing surface is relatively short within one group (G) or pixel (PX), the influence of light on adjacent light-emitting elements (120a, 120b, 120c) can be reduced.

[0071] A plurality of light emitting elements (120a, 120b, 120c) can be grouped to form a plurality of groups (G) or pixels (PX). The plurality of groups (G) or pixels (PX) can be arranged in a grid shape on a substrate (110). A distance between groups (G) or pixels (PX) based on a first direction can be smaller than a distance between groups (G) or pixels (PX) based on a second direction. A distance between groups (G) or pixels (PX) based on the first direction can be larger than a distance between light emitting elements (120a, 120b, 120c) within one group (G) or pixel (PX).

[0072] The light-emitting elements (120a, 120b, 120c) are light-emitting diode elements that are arranged on one surface of a substrate (110) and emit light, and can have various configurations. For example, the light-emitting elements (120a, 120b, 120c) can have a configuration identical to or similar to the light-emitting element (120) of FIG. 5. Referring to FIG. 5, the light-emitting element (120) can include a semiconductor layer (121, 122, 123) formed on a growth substrate.

[0073] The growth substrate is not limited to any substrate capable of growing a nitride semiconductor, and may include, for example, a heterogeneous substrate such as a sapphire substrate, a gallium arsenide substrate, a silicon substrate, a silicon carbide substrate, or a spinel substrate, and may also include a homogeneous substrate such as a gallium nitride substrate or an aluminum nitride substrate. The growth substrate may be removed after the semiconductor layer is grown. Fig. 5 illustrates a light emitting device (120) from which the growth substrate has been removed, but the growth substrate is not necessarily removed. As the size of the light emitting device (120) decreases, the possibility of breakage or damage to the light emitting device (120) may increase, and therefore, stable mounting is required and reliability must be ensured during operation.

[0074] Referring to FIG. 5, the light-emitting element (120) may include a first conductive semiconductor layer (121), a second conductive semiconductor layer (122), and an active layer (123) disposed between the first conductive semiconductor layer (121) and the second conductive semiconductor layer (122).

[0075] The above first conductive semiconductor layer (121) may be a semiconductor layer grown on one side of a growth substrate, and a buffer layer (not shown) may be additionally formed between the first conductive semiconductor layer (121) and the growth substrate.

[0076] The first conductive semiconductor layer (121) may include a phosphide or nitride semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown and formed on a growth substrate using a method such as MOCVD, MBE, or HVPE. In addition, the first conductive semiconductor layer (121) may be doped to be n-type by including one or more impurities such as Si, C, Ge, Sn, Te, or Pb. However, the present invention is not limited thereto, and the first conductive semiconductor layer (121) may be doped to be of the opposite conductive type by including a p-type dopant. In addition, the first conductive semiconductor layer (121) may be formed of a single layer or multiple layers.

[0077] The above active layer (123) is a light-emitting layer disposed on one side of the first conductive semiconductor layer (121), and may include a phosphide or nitride semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown on the first conductive semiconductor layer (121) using a technique such as MOCVD, MBE, or HVPE.

[0078] Additionally, the active layer (123) may include a quantum well structure (QW) including at least two barrier layers and at least one well layer, and further may include a multiple quantum well structure (MQW) including a plurality of barrier layers and a plurality of well layers.

[0079] The wavelength of light emitted from the above active layer (123) can be controlled by controlling the composition ratio of the material constituting the well layer. In this case, the well layer may commonly contain the same element, and may include In, for example.

[0080] The second conductive semiconductor layer (122) may be a semiconductor layer disposed on one side of the active layer (123). The second conductive semiconductor layer (122) may include a phosphide-based or nitride-based semiconductor such as (Al, Ga, In)P or (Al, Ga, In)N, and may be grown using a technique such as MOCVD, MBE, or HVPE. The second conductive semiconductor layer (122) may be doped with a conductive type opposite to that of the first conductive semiconductor layer (121). For example, the second conductive semiconductor layer (122) may be doped with a p-type by including an impurity such as Mg.

[0081] The light emitting element (120) may have a light-emitting surface formed on the first conductive semiconductor layer (121) or the second conductive semiconductor layer (122) side, through which light is emitted. For example, light generated in the active layer (123) may be emitted to the outside through the first conductive semiconductor layer (121), or may be emitted to the outside through the second conductive semiconductor layer (122). A rough structure may be formed on one surface of the first conductive semiconductor layer (121) or one surface of the second conductive semiconductor layer (122) to increase light extraction efficiency.

[0082] The light-emitting element (120) may include a mesa in which a portion of the second conductive semiconductor layer (122) and the active layer (123) are etched to expose a portion of the first conductive semiconductor layer (121). The light-emitting element (120) may include a metal layer (125) disposed on an exposed area of ​​the first conductive semiconductor layer (121).

[0083] In addition, the light emitting element (120) may include an ohmic electrode (124) disposed on one surface of a second conductive semiconductor layer (122) and an insulating layer (126) covering the first conductive semiconductor layer (121) and the second conductive semiconductor layer (122). The insulating layer (126) may include a first opening (126a) exposing a portion of the metal layer (125) and a second opening (126b) exposing a portion of the ohmic electrode (124). The insulating layer (126) may be composed of a single layer or multiple layers.

[0084] In addition, the light emitting element (120) may include a first electrode pad (128) connected to the metal layer (125) through the first opening (126a) and a second electrode pad (129) connected to the ohmic electrode (124) through the second opening (126b).

[0085] The above light-emitting element (120) can be driven by being electrically connected to an external power source through the first electrode pad (128) and the second electrode pad (129). At this time, current can flow from the second electrode pad (129) through the semiconductor layers (122, 123, 121) to the first electrode pad (128), and light can be generated through recombination of electrons and holes in the active layer (123).

[0086] The above first electrode pad (128) and second electrode pad (129) are configured to mount the light emitting element (200) on the substrate electrode (E) of the substrate (110), and may be formed of a suitable material. For example, the first and second electrode pads (128, 129) may include Au.

[0087] The first and second electrode pads (128, 129) have a resistivity of 1×10 to supply current to the first and second conductive semiconductor layers (121, 122) of the light-emitting element (120). -4 It may include a material having a thickness of Ω·cm or less. In order to satisfy these conditions, the first and second electrode pads (128, 129) may be made of a metal material such as copper, gold, silver, tin, iron, or aluminum. Alternatively, the first and second electrode pads (128, 129) may be made of a transparent electrode made of a compound of the metal, an oxide such as indium tin oxide (ITO), or manganese oxide, a conductive polymer (PEDOT:PSS, Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)), a nanowire such as a silver nanowire or a carbon nanotube, etc.

[0088] Meanwhile, a concave surface (R) sunken inwardly may be formed on the surface of the first and second electrode pads (128, 129) facing the substrate (110).

[0089] As illustrated in Fig. 5, a step structure may be formed on the concave surface (R), but the present invention is not limited thereto. Fig. 6 illustrates a modified example of the first and second electrode pads (128, 129) of Fig. 5, wherein an inwardly sunken concave surface (R) without a step structure may be formed on the first and second electrode pads (128′, 129′).

[0090] The particles (132) described later are confined by the concave surface (R), so that the light-emitting element (120) can be mounted more stably. The concave surface (R) may also be formed into a curved surface.

[0091] As another example, the light-emitting element (120) may be a stacked semiconductor layer in which a plurality of light-emitting diodes are stacked and arranged.

[0092] The stacked semiconductor layer may include a first light-emitting stack, a second light-emitting stack, and a third light-emitting stack that are sequentially stacked. The second light-emitting stack may be arranged on top of the first light-emitting stack, and the third light-emitting stack may be sequentially stacked on top of the second light-emitting stack.

[0093] Each of the first to third light-emitting stacks may include a first conductive semiconductor layer (121), an active layer (123), and a second conductive semiconductor layer (122).

[0094] In addition, the light emitting element (120) may include an adhesive layer, a lower contact layer, an insulating layer, and electrode pads that adhere the first to third light emitting stacks. The electrode pads may be electrically connected to a substrate electrode (E) of the substrate (110).

[0095] The first to third light-emitting stacks may be a light-emitting stack that emits red light, a light-emitting stack that emits green light, and a light-emitting stack that emits blue light, respectively. Accordingly, a stacked light-emitting element (120) including the first to third light-emitting stacks may display RGB primary colors as pixels.

[0096] The above light-emitting element (120) can be implemented by being transformed into various structures, and it is obvious that it can be transformed into various structures such as a flip-chip type, a vertical type, and a horizontal type. In addition, depending on the shape of the light-emitting element (120), the growth substrate may be omitted.

[0097] Referring again to FIG. 1, the peak wavelengths of light emitted from each light-emitting element (120a, 120b, 120c) disposed on the upper surface of the substrate (110) may be the same or different. Alternatively, the deviation of the peak wavelengths of the plurality of light-emitting elements (120a, 120b, 120c) may be within 5 nm.

[0098] For example, one of the light emitting elements (120a, 120b, 120c) may be a diode that emits blue light, and may be a blue light emitting diode having a peak wavelength within the blue wavelength range, and the difference between the peak wavelength and the dominant wavelength of the blue light emitting diode may be between 2 nm and 15 nm. Specifically, the blue light emitting diode may have a peak wavelength between 430 nm and 475 nm, and may have a dominant wavelength between 460 nm and 480 nm. Maintaining the difference in dominant wavelengths reduces color deviation, enabling more vivid color expression. The peak wavelength of the blue light emitting diode may be a wavelength shorter than the dominant wavelength. This allows for increasing light energy while compensating for visibility, thereby reducing design difficulty.

[0099] One of the light emitting elements (120a, 120b, 120c) is a diode that emits green light, and may be a green light emitting diode having a peak wavelength within a green wavelength range, and the difference between the peak wavelength and the dominant wavelength of the green light emitting diode may be between 5 and 20 nm. Specifically, the green light emitting diode may have a peak wavelength between 510 nm and 540 nm, and may have a dominant wavelength between 525 nm and 545 nm. Maintaining the difference in dominant wavelengths reduces color deviation, enabling more vivid color expression. The peak wavelength of the green light emitting diode may be a wavelength shorter than the dominant wavelength. This allows for increasing light energy while compensating for visibility, thereby reducing design difficulty.

[0100] One of the light emitting elements (120a, 120b, 120c) is a diode that emits red light, and may be a red light emitting diode having a peak wavelength within a red wavelength range, and the difference between the peak wavelength and the dominant wavelength of the red light emitting diode may be between 5 and 30 nm. Specifically, the red light emitting diode may have a peak wavelength between 620 nm and 640 nm, and may have a dominant wavelength between 600 nm and 630 nm. Maintaining the difference in dominant wavelengths reduces color deviation, enabling more vivid color expression. The peak wavelength of the red light emitting diode may be a wavelength longer than the dominant wavelength. This allows for increasing light energy while compensating for visibility, thereby reducing design difficulty.

[0101] The above light emitting elements (120a, 120b, 120c) may be configured to emit orange light, yellow light, purple light, or ultraviolet light in addition to blue light, green light, and red light.

[0102] In order to increase the integration level, the above light emitting element (120) is 1×10 6 μm 2 It may have an area below. Preferably, the area of ​​the light emitting element (120) is 2.5×10 5 μm2 It may be less than or equal to 2.5×10. More preferably, the area of ​​the light emitting element (120) is 2.5×10. 2 μm 2 It could be as follows:

[0103] The spacer (130) includes a plurality of particles (132), and the spacer (130) can have various configurations for physically connecting the light-emitting elements (120a, 120b, 120c) and the substrate (110). Specifically, the spacer (130) may include a plurality of particles (132) and a polymer layer (134) surrounding the plurality of particles (132).

[0104] Referring to FIGS. 2 and 3, the particles (132) may be dispersed within the spacer (130). The plurality of particles (132) may include a conductive material and may electrically connect the light-emitting elements (120a, 120b, 120c) and the substrate (110). Referring to FIG. 4, the particles (132) may be spheres having a center point (C). The plurality of particles (132) may have different diameters (Q) and shapes. For example, the diameter of the particles (132) may be within 15 μm. Therefore, a light scattering effect may be implemented without the particles (132) protruding from the upper surface of the light-emitting elements (120a, 120b, 120c).

[0105] At this time, the diameter (Q) of the particle (132) may be smaller than the maximum thickness of the semiconductor layer (121, 122, 123) of the light-emitting element (120). In addition, the distance (D) between the particles (132) may be different from each other. Here, the distance (D) may mean the distance between adjacent particles (132).

[0106] The proportion of the plurality of particles (132) in the spacer (130) may be 0.5% to 50%. In addition, the particles (132) may have a multilayer structure having different materials as illustrated in FIG. 4. For example, the particles (132) may include a core layer (132a) and an outer layer (132b) surrounding the core layer (132a) and having a material different from that of the core layer (132a). The core layer (132a) may be made of a polymer material. The outer layer (132b) may be a coating layer surrounding the core layer (132a) as a layer for electrical conductivity. The outer layer (132b) may include a metal. For example, the outer layer (132b) may include at least one material selected from the group consisting of Ni, Au, Pd, Ti, Al, and Sn.

[0107] As a variation, the outer surface of the particle (132) may be formed with irregularities. Accordingly, the surface area of ​​the outer metal of the particle (132) can be increased, thereby reducing the electrical resistance.

[0108] Some of the particles (132) may be disposed between the first and second electrode pads (128, 129) of the light-emitting element (120a, 120b, 120c) and one surface of the substrate (110). The particles (132) may electrically connect between the first and second electrode pads (128, 129) and the substrate electrode (E). Since the semiconductor layers (121, 122, 123) of the light-emitting element (120a, 120b, 120c) form a mesa structure, the thickness of the spacer (130) between the first electrode pad (128) and one surface of the substrate (110) may be thicker than the thickness of the spacer (130) between the second electrode pad (129) and one surface of the substrate (110).

[0109] Other parts of the above particles (132) may be placed between the light emitting elements (120a, 120b, 120c).

[0110] The polymer layer (134) can be configured in various ways as a buffer layer surrounding the particles (132). The particles (132) can be dispersed within the polymer layer (134).

[0111] The polymer layer (134) may be a thermoplastic or thermosetting resin and may include an adhesive material. For example, the polymer layer (134) may include Si, epoxy, or the like, but the present invention is not limited thereto. That is, the spacer (130) may be a film layer formed by mixing particles (132) and a polymer into a film shape.

[0112] The above spacer (130) is arranged between the light emitting elements (120a, 120b, 120c) and the substrate (110), and when pressed in a specific direction, it can conduct electricity in the pressing direction and be electrically insulated in another direction. Here, the pressing direction may be a third direction perpendicular to the first and second directions based on FIGS. 2 and 3. Accordingly, each light emitting element (120a, 120b, 120c) can be electrically connected to the substrate (110) and can be insulated from other adjacent light emitting elements (120a, 120b, 120c).

[0113] The above spacer (130) can fill the space between the light emitting elements (120a, 120b, 120c) and between the light emitting elements (120a, 120b, 120c) and the substrate (110). Through the spacer (130), support and electrical connection to the light emitting elements (120a, 120b, 120c) can be achieved at the same time.

[0114] The upper surface of the polymer layer (134) between the light-emitting elements (120a, 120b, 120c) may coincide with the upper surface of the light-emitting elements (120a, 120b, 120c).

[0115] The plurality of particles (132) may be positioned at the bottom of the spacer (130). That is, the plurality of particles (132) may be positioned closer to the substrate (110).

[0116] At this time, a virtual line (M) passing through the midpoint between the upper surfaces of the light-emitting elements (120a, 120b, 120c) on one surface of the substrate (110) can be defined. The centers of the particles (132) located between the light-emitting elements (120a, 120b, 120c) within one group (G) or pixel (PX) can be located on the virtual line (M) or below the virtual line (M).

[0117] The particle (132) disposed between at least two groups (G) or pixels (PX) may be disposed higher than the position of the particle (132) disposed between at least two light-emitting elements (120a, 120b, 120c) within one group (G) or pixel (PX). The vertical distance (S) from the upper vertex of the particle (132) disposed between at least two groups (G) or pixels (PX) to the upper surface of the polymer layer (134) may be smaller than the vertical distance from the upper vertex of the particle (132) disposed between at least two light-emitting elements (120a, 120b, 120c) within one group (G) or pixel (PX) to the upper surface of the polymer layer (134). Therefore, the transmittance and transparency of the area between the groups (G) or between the pixels (PX) can be controlled differently.

[0118] Meanwhile, referring to FIG. 3, the substrate (110) may further include a cover layer (150) disposed on one surface of the electrode layer (112). The cover layer (150) may include an opening (OP) that penetrates vertically to place the plurality of light-emitting elements (120a, 120b, 120c).

[0119] Two or more light emitting elements (120a, 120b, 120c) may be arranged in the above opening (OP). For example, three light emitting elements (120a, 120b, 120c) may be arranged in the above opening (OP). At this time, the three light emitting elements (120a, 120b, 120c) may be arranged spaced apart from each other in the longitudinal direction (first direction) within the opening (OP) to form one group (G) or pixel (PX). That is, the cover layer (150) may surround the light emitting elements (120a, 120b, 120c) that form one group (G) or pixel (PX).

[0120] The thickness (K) of the cover layer (150) may be smaller than the diameter (Q) of the particle (132). In addition, on the cover layer (150), the diameter (Q) of at least one particle (132) may be larger than the vertical distance (S) from the particle (132) to the upper surface of the polymer layer (134).

[0121] As the cover layer (150) protrudes from one surface of the substrate (110), the particles (132) disposed on the upper portion of the cover layer (150) can be positioned higher than the particles (132) positioned between the light-emitting elements (120a, 120b, 120c) within the opening (OP) of the cover layer (150).

[0122] The above cover layer (150) is a layer that surrounds the light emitting elements (120a, 120b, 120c) and can improve light extraction efficiency and contrast by scattering light emitted from the light emitting elements (120a, 120b, 120c). In particular, since the particles (132) are positioned relatively higher than other regions by the cover layer (150), the light scattering effect through the particles (132) in the upper region of the cover layer (150) can be increased.

[0123] Meanwhile, the spacer (130) can perform not only the function of supporting the light-emitting elements (120a, 120b, 120c) and enabling physical connection, but also the function of absorbing and dissipating heat generated during operation of the light-emitting elements (120a, 120b, 120c). The heat generated during operation of the light-emitting elements (120a, 120b, 120c) can cause expansion / contraction of electrodes with a high thermal expansion rate, etc., and can cause problems such as the light-emitting elements (120a, 120b, 120c) being peeled off from the substrate (110) or structurally weak parts being damaged.

[0124] The particles (132) mixed in the spacer (130) of the present invention can absorb heat generated from the light-emitting elements (120a, 120b, 120c) and evenly distribute the heat to disperse and alleviate thermal stress. To this end, the thermal expansion coefficient of the particles (132) may be smaller than the thermal expansion coefficients of the first and second electrode pads (128, 129) of the light-emitting elements (120a, 120b, 120c). In particular, the particles (132) have a relatively smaller thermal expansion coefficient than the first and second electrode pads (128, 129) and have a spherical shape, thereby receiving surrounding heat and alleviating thermal expansion, and achieving more effective heat dispersion and heat distribution. Accordingly, the light emitting module (100) can be prevented from being deformed or damaged by heat generated when the light emitting element (120a, 120b, 120c) is driven, and defects due to heat can be prevented. Furthermore, since the particle (132) is arranged at the bottom of the spacer (130) adjacent to the substrate (110), more effective heat absorption and heat dissipation can be achieved.

[0125] Meanwhile, the light-emitting module (100) may further include a protective layer (140) covering the upper surface of the light-emitting elements (120a, 120b, 120c). The protective layer (140) may cover the light-emitting elements (120a, 120b, 120c) and the spacer (130) as a thin film layer to protect the light-emitting module (100) from the outside. The protective layer (140) is an optional component and is not necessarily provided.

[0126] Next, Fig. 7 is a cross-sectional view illustrating a portion of a configuration of a light-emitting module (200) according to another embodiment of the present invention, which may be configured identically or similarly to the light-emitting module (100) described above, except for the spacer (230). Referring to Fig. 7, the light-emitting module (200) may include a plurality of light-emitting elements (120a, 120b, 120c) arranged on one surface of a substrate (110).

[0127] On one surface of the substrate (110), a substrate electrode (E) and a spacer (230) may be arranged as a conductive material. The spacer (230) may electrically connect the light-emitting elements (120a, 120b, 120c) and the substrate (110). In addition, the spacer (230) may physically connect the light-emitting elements (120a, 120b, 120c) and the substrate (110). The spacer (230) may be formed as a single layer or multiple layers. FIG. 7 illustrates an example in which a spacer (230) is placed on the side corresponding to the first electrode pad (128) of a light-emitting element (120a, 120b, 120c), but is not limited thereto, and the spacer (230) may be placed on the side corresponding to the second electrode pad (129) or may be placed corresponding to each of the first electrode pad (128) and the second electrode pad (129).

[0128] When the above spacer (230) is arranged to correspond to each of the first electrode pad (128) and the second electrode pad (129), the thickness of the spacer (230) connected to the first electrode pad (128) may be thicker than the thickness of the spacer (230) connected to the second electrode pad (129). Since the light-emitting element (120a, 120b, 120c) includes a mesa structure, the thickness on the side of the first conductive semiconductor layer (121) is configured to be thinner, and therefore, by making the thickness of the spacer (230) connected to the first conductive semiconductor layer (121) thicker, the light-emitting element (120a, 120b, 120c) can be supported while maintaining the horizontality, and the light-emitting element (120a, 120b, 120c) can be stably fixed without damage to the thin semiconductor layer.

[0129] In addition, the width of the spacer (230) at the surface in contact with the substrate (110) and the width of the surface in contact with the electrode pads (128, 129) of the light emitting elements (120a, 120b, 120c) may be different from each other.

[0130] The above light-emitting module (200) may additionally include a molding part (240) that covers the light-emitting elements (120a, 120b, 120c) and the substrate (110). The molding part (240) may be light-transmitting. FIG. 7 illustrates an example in which the upper surface of the molding part (240) coincides with the upper surfaces of the light-emitting elements (120a, 120b, 120c), but the present invention is not limited thereto. For example, the molding part (240) may cover the entire upper surfaces of the light-emitting elements (120a, 120b, 120c).

[0131] The intensity of light sensed on the upper surface of the molding portion (240) may have a different value from the intensity of light sensed on the other surface (the opposite surface of one surface) of the substrate (110).

[0132] The light emission pattern in the direction of the upper surface of the molding part (240) may be different from the light emission pattern in the other surface (the opposite surface of one surface) of the substrate (110). The light directivity angle in the direction of the upper surface of the molding part (240) may be different from the light directivity angle in the other surface (the opposite surface of one surface) of the substrate (110). The surface uniformity (or roughness, RMS) in the upper surface of the molding part (240) may be different from the surface uniformity (or roughness, RMS) in the other surface of the substrate (110).

[0133] The molding portion (240) may include particles. The particles may be light-reflective or light-absorbing materials. The particles may change the light path or change the amount of light emitted to the outside, such as by reducing or increasing it.

[0134] The above light-emitting module (200) may include a plurality of light-emitting elements (120a, 120b, 120c) arranged on one surface of a substrate (110). Since the semiconductor layer of the light-emitting elements (120a, 120b, 120c) has a mesa structure, the distance between the first conductive semiconductor layer (121) of the light-emitting elements (120a, 120b, 120c) and one surface of the substrate (110) may be different from the distance between the second conductive semiconductor layer (122) and one surface of the substrate (110). For example, the first region is the region between the exposed region of the first conductive semiconductor layer (121) and one surface of the substrate (110), and the distance from the exposed region of the first conductive semiconductor layer (121) to one surface of the substrate (110) may be defined as the first distance. Similarly, the second region is the region between the second conductive semiconductor layer (122) and one surface of the substrate (110), and the distance from the second conductive semiconductor layer (122) to one surface of the substrate (110) can be defined as the second distance. In this case, the first distance and the second distance may be different. The first distance may be greater than the second distance.

[0135] The above light-emitting module (200) may have a light-reflective material (e.g., electrode pads (128, 129), spacers (230), etc.) disposed between the substrate (110), which is a first light-transmitting material, and the semiconductor layers of the light-emitting elements (120a, 120b, 120c), which are second light-transmitting materials. However, it is not necessarily limited thereto, and a light-transmitting material (e.g., ohmic electrodes (124), etc.) may be disposed between the substrate (110), which is a first light-transmitting material, and the semiconductor layers of the light-emitting elements (120a, 120b, 120c), which are second light-transmitting materials.

[0136] An insulating material may be additionally disposed on one surface of the substrate (110). The insulating material may be resin, PSR, polymer, silicone, or the like. The insulating material may surround the side surface of the substrate electrode (E) and may extend into the space between the substrate electrodes (E). The insulating material may expose the upper surface of the substrate electrode (E), and the substrate electrode (E) may form an electrical connection with the light-emitting elements (120a, 120b, 120c) at the exposed upper surface. The insulating material may be a light-transmitting material. The refractive index of the insulating material may be different from the refractive index of the semiconductor layers (121, 122, 123) of the light-emitting elements (120a, 120b, 120c). The refractive index of the insulating material may be different from the refractive index of the substrate (110). The light transmittance of the above insulating material may be different from the light transmittance of the substrate (110).

[0137] The insulating material may be a light-transmitting material. The refractive index of the insulating material may be different from the refractive index of the first conductive semiconductor layer (121), the second conductive semiconductor layer (122), or the active layer (123) of the light-emitting element (120a, 120b, 120c). The refractive index of the insulating material may be different from the refractive index of the substrate (110). The light transmittance of the insulating material may be different from the light transmittance of the substrate (110). The insulating material may have a diffusivity with respect to light emitted from the light-emitting element (120a, 120b, 120c).

[0138] FIG. 8 is a plan view showing substrate electrodes (EP, EN) arranged on one surface of a substrate (110) of a light-emitting module (200). One of the substrate electrodes (EP, EN) may be a first substrate electrode (EN), and the other may be a second substrate electrode (EP) having a different polarity from the first substrate electrode (EN).

[0139] The above first substrate electrode (EN) may include a first main electrode (722) arranged on one side of the substrate (110) and a second extension electrode (724) formed along a second direction in which the light emitting elements (120) are arranged by extending from the first main electrode (722).

[0140] The above second substrate electrode (EP) may include a second main electrode (712) arranged on one side of the substrate (110) and a second extension electrode (714) formed along a second direction in which the light emitting elements (120) are arranged by extending from the second main electrode (712).

[0141] The first and second extension electrodes (724, 714) may be provided as a single number or may be branched from a single first and second main electrode (722, 712) into a plurality of numbers. When the light-emitting module (200) includes a plurality of first and second extension electrodes (724, 714), the first and second extension electrodes (724, 714) may be arranged alternately. At this time, the plurality of first and second extension electrodes (724, 714) may include a first region arranged parallel to each other and a second region in which the distance between one extension electrode (724, 714) and an adjacent extension electrode (724, 714) is different.

[0142] Alternatively, the first and second main electrodes (722, 712) may include first and second portions having different widths. Alternatively, the first and second extension electrodes (724, 714) may include first and second portions having different widths. Alternatively, the first and second extension electrodes (724, 714) may include bent portions (726, 716) that are bent in different directions. A portion of the first extension electrode (724) may extend toward the second extension electrode (714) through the bent portion (726). A portion of the second extension electrode (714) may extend toward the first extension electrode (724) through the bent portion (716).

[0143] The above light emitting elements (120) are arranged on the first extension electrode (714) and the second extension electrode (724), and the first and second electrode pads (128, 129) of the light emitting elements (120) can be electrically connected to the first extension electrode (714) and the second extension electrode (724), respectively. It goes without saying that the first extension electrode (714) and the second extension electrode (724) and the first and second electrode pads (128, 129) can be electrically connected and supported through the spacers (130, 230) described above.

[0144] The above-described light-emitting module (100, 200) can be applied to various light-emitting devices such as display devices, lighting, and lamps.

[0145]

[0146] Although the present invention has been described above with reference to preferred embodiments thereof, it will be understood by those skilled in the art or having ordinary knowledge in the art that various modifications and changes to the present invention can be made without departing from the spirit and technical scope of the present invention as set forth in the claims to be described below.

[0147] Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the patent claims.

Claims

1. It includes a substrate, a plurality of light-emitting elements, and a spacer disposed between one surface of the substrate and the plurality of light-emitting elements. The above spacer comprises a plurality of particles, A light-emitting module in which the diameter of the plurality of particles is smaller than the maximum thickness of the semiconductor layer of the light-emitting element.

2. In claim 1, A light emitting module wherein the spacer further comprises a polymer layer surrounding the plurality of particles.

3. In claim 1, A light emitting module in which the upper surface of the polymer layer among the plurality of light emitting elements matches the upper surface of the light emitting element.

4. In claim 1, The above plurality of particles are light emitting modules positioned at the bottom of the spacer.

5. In claim 1, A light emitting module in which the spacing between the plurality of particles is different from each other.

6. In claim 1, A light-emitting module in which the diameters of the above plurality of particles are different from each other.

7. In claim 1, A light emitting module in which the centers of the plurality of particles are located on or below the virtual line passing through the midpoint between the upper surface of the light emitting element and one surface of the substrate.

8. In claim 1, A light-emitting module including an electrode layer including a substrate electrode electrically connected to the electrode pad of the light-emitting element, a main insulating layer disposed below the electrode layer, and a cover layer disposed above the electrode layer.

9. In claim 8, The above cover layer includes an upper and lower penetrating opening for arranging the plurality of light-emitting elements, A light-emitting module in which two or more light-emitting elements are arranged in the above opening.

10. In claim 9, A light emitting module in which the thickness of the above cover layer is smaller than the diameter of the above particle.

11. In claim 9, The above spacer further includes a polymer layer surrounding the plurality of particles, A light emitting module on the above cover layer, wherein the diameter of the particle is greater than the vertical distance from the particle to the upper surface of the polymer layer.

12. In claim 9, The above light emitting element has a rectangular shape having a long side and a short side on a plane, A light emitting module in which the two or more light emitting elements are spaced apart along the longitudinal direction within the above opening.

13. In claim 12, A light emitting module in which the particles disposed on the upper portion of the cover layer are positioned higher than the particles positioned between the light emitting elements within the opening.

14. In claim 1, A light emitting module in which the thermal expansion coefficient of the above particles is smaller than the thermal expansion coefficient of the electrode pad of the above light emitting element.

15. In claim 14, The above particle is a light emitting module including a core layer and an outer layer surrounding the core layer and having a different material from the core layer.

16. In claim 1, The above particle is a sphere-shaped luminescent module with a center point.

17. In claim 16, A light-emitting module in which unevenness is formed on the outer surface of the above particle.

18. In claim 1, Some of the above plurality of particles are arranged between the electrode pad of the light emitting element and one surface of the substrate, The above electrode pad is a light emitting module in which a concave surface is formed on the surface facing the substrate.

19. In claim 18, A light emitting module having a stepped structure formed on the above concave surface.

20. In claim 1, The light emitting element includes a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, a first electrode pad disposed on an exposed area of the first conductive semiconductor layer exposed by etching the second conductive semiconductor layer and the active layer, and a second electrode pad disposed on the second conductive semiconductor layer. A light emitting module in which the thickness of the spacer between the first electrode pad and one surface of the substrate is thicker than the thickness of the spacer between the second electrode pad and one surface of the substrate.

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