Liquid crystal phase shifter and preparation method therefor, and antenna

Abstract

The present disclosure provides a liquid crystal phase shifter and a preparation method therefor, and an antenna. The liquid crystal phase shifter provided in the present disclosure has a phase shift area and transition areas located on two opposite sides of the phase shift area. The liquid crystal phase shifter comprises a first substrate, a second substrate, a liquid crystal layer, a microstrip line, and a reference electrode layer. The microstrip line is located on the surface of the first substrate facing the liquid crystal layer, and comprises a first portion located in the phase shift area and second portions located in the transition areas. The reference electrode layer is located on the surface of the second substrate facing the liquid crystal layer, and comprises a first reference electrode and a second reference electrode which are arranged in a second direction. The orthographic projections of the first reference electrode and the second reference electrode on the first substrate both overlap with the orthographic projection of the first portion on the first substrate. There are a first gap and a second gap respectively between the orthographic projections of one second portion and the first reference electrode on the first substrate and between the orthographic projections of the other second portion and the second reference electrode on the first substrate. The width of at least part of each of the first gap and the second gap decreases in the direction approaching the phase shift area. In this way, loss is reduced and miniaturization is realized.

Description

Liquid crystal phase shifter, manufacturing method thereof, and antenna Technical Field

[0001] The present disclosure relates to the field of communication technology, and in particular to a liquid crystal phase shifter, a preparation method thereof, and an antenna. Background Art

[0002] With the gradual advancement of communications technology, phase shifters have become increasingly widely used. A phase shifter is a device used to change the phase of an electromagnetic wave signal. Taking a liquid crystal phase shifter as an example, when controlling the phase shift, the liquid crystal within the liquid crystal cell rotates under the influence of the electric field formed between the microstrip line and the ground electrode. This changes the dielectric constant of the liquid crystal, thereby shifting the phase of the radio frequency signal transmitted within the liquid crystal phase shifter. Liquid crystal phase shifters are widely used in scenarios such as satellite communications and communication base stations.

[0003] Summary of the Invention

[0004] The present disclosure aims to solve at least one of the technical problems existing in the prior art, and proposes a liquid crystal phase shifter, a preparation method thereof, and an antenna.

[0005] To achieve the above objectives, in a first aspect, the present disclosure provides a liquid crystal phase shifter having a phase shift region and transition regions located on opposite sides of the phase shift region; the liquid crystal phase shifter comprises:

[0006] a first substrate and a second substrate arranged opposite to each other;

[0007] a liquid crystal layer, located between the first substrate and the second substrate;

[0008] a microstrip line, located on a surface of the first substrate facing the liquid crystal layer and extending along a first direction, the microstrip line comprising: a first portion located in the phase shift region and a second portion located in the transition region;

[0009] a reference electrode layer located on a surface of the second substrate facing the liquid crystal layer; the reference electrode layer comprising a first reference electrode and a second reference electrode arranged along a second direction; orthographic projections of the first reference electrode and the second reference electrode on the first substrate overlap with an orthographic projection of the first portion on the first substrate; and the first direction intersects the second direction;

[0010] wherein the orthographic projection of the second portion on the first substrate is located between the orthographic projections of the first reference electrode and the second reference electrode on the first substrate; a first gap exists between the second portion and the orthographic projection of the first reference electrode on the first substrate, and a second gap exists between the second portion and the orthographic projection of the second reference electrode on the first substrate;

[0011] The width of at least a portion of the first gap decreases gradually or in a step-like manner in a direction approaching the phase shift zone; the width of at least a portion of the second gap decreases gradually or in a step-like manner in a direction approaching the phase shift zone.

[0012] Optionally, a width of an end of the second portion away from the phase shift region is greater than a width of an end of the second portion close to the phase shift region.

[0013] Optionally, the width of the second portion decreases gradually or in a step-like manner along a direction approaching the phase-shifting region.

[0014] Optionally, the second portion has a first edge close to the first reference electrode and a second edge close to the second reference electrode;

[0015] The shapes of the first edge and the second edge are both selected from: a straight line, a curve, and a broken line.

[0016] Optionally, the first reference electrode includes a first electrode portion located in the transition region, and the second reference electrode includes a second electrode portion located in the transition region;

[0017] An end of the first electrode portion close to the phase shift region has a first width in the second direction, and an end of the first electrode portion away from the phase shift region has a second width in the second direction; an end of the second electrode portion close to the phase shift region has a third width in the second direction, and an end of the second electrode portion away from the phase shift region has a fourth width in the second direction;

[0018] Wherein, the first width is greater than the second width; and / or the third width is greater than the fourth width.

[0019] Optionally, the width of the first electrode portion gradually decreases in a direction approaching the phase-shifting region; and / or,

[0020] The width of the second electrode portion gradually decreases along a direction approaching the phase shift region.

[0021] Optionally, the first electrode portion has a third edge close to the microstrip line and a fourth edge away from the microstrip line, and the second electrode portion has a fifth edge close to the microstrip line and a sixth edge away from the microstrip line;

[0022] The fourth edge and the sixth edge are both straight lines extending along the first direction;

[0023] The shapes of the third edge and the fifth edge are both selected from: a straight line, a curve and a broken line.

[0024] Optionally, the third edge is a curve that conforms to an exponential function; and / or the fifth edge is a curve that conforms to an exponential function.

[0025] Optionally, the first gap includes a first gap portion and a second gap portion located between the first gap portion and the phase shift zone, wherein the width of the second gap portion gradually decreases or decreases in a step-like manner in a direction approaching the phase shift zone; the width of the first gap portion is smaller than the maximum width of the second gap portion; and / or,

[0026] The second gap includes a third gap portion and a fourth gap portion located between the third gap portion and the phase shift zone. The width of the fourth gap portion gradually decreases or decreases in a step-like manner along a direction approaching the phase shift zone. The width of the third gap portion is smaller than the maximum width of the fourth gap portion.

[0027] Optionally, the first reference electrode includes a first electrode portion located in the transition region; the first electrode portion includes a first sub-electrode adjacent to the first gap portion, and a second sub-electrode adjacent to the second gap portion, the width of the first sub-electrode in the second direction is greater than the minimum width of the second sub-electrode in the second direction; the width of the second sub-electrode gradually increases or increases in a stepwise manner along a direction approaching the phase shift region;

[0028] and / or,

[0029] The second reference electrode includes a second electrode portion located in the transition zone; the second electrode portion includes a third sub-electrode adjacent to the first gap portion, and a fourth sub-electrode adjacent to the second gap portion, the width of the third sub-electrode in the second direction is greater than the minimum width of the fourth sub-electrode in the second direction; the width of the third sub-electrode gradually increases or increases in a step-by-step manner along the direction approaching the phase shift zone.

[0030] Optionally, the edge of the first electrode portion away from the microstrip line is a straight line extending along the first direction; the edge of the first electrode portion close to the microstrip line includes: a first sub-edge adjacent to the first gap portion, and a second sub-edge adjacent to the second gap portion; the first sub-edge is a straight line extending along the first direction, and the second sub-edge is a broken line; and / or,

[0031] The edge of the second electrode portion away from the microstrip line is a straight line extending along the first direction; the edge of the second electrode portion close to the microstrip line includes: a third sub-edge adjacent to the first gap portion, and a fourth sub-edge adjacent to the second gap portion; the third sub-edge is a straight line extending along the first direction, and the fourth sub-edge is a broken line.

[0032] Optionally, the first portion includes: a first main portion extending along a first direction, and a plurality of first branches cross-connected with the first main portion; the first main portion is connected to the second portion;

[0033] The portion of the first reference electrode located in the phase shift region has M first teeth, wherein M1 first teeth overlap with the orthographic projection of the first branch portion on the first substrate; M1≤M, M1>0;

[0034] The portion of the second reference electrode located in the phase-shifting region has N second teeth, wherein N1 second teeth overlap with the orthographic projection of the first branch portion on the first substrate; N1≤N, N1>0.

[0035] Optionally, among the M1 first tooth portions, an overlapping area of ​​the orthographic projections of the M2 first tooth portions and the first branch portion on the first substrate gradually increases in a direction approaching the center of the phase shift region; M1≥M2>2;

[0036] Among the N1 second teeth, overlapping areas of the N2 second teeth and the orthographic projections of the first branch on the first substrate gradually increase in a direction approaching the center of the phase shift region; N1≥N2>2.

[0037] Optionally, the liquid crystal phase shifter further includes at least one connecting portion; two ends of the connecting portion are respectively connected to the first reference electrode and the second reference electrode; and at least a portion of the liquid crystal layer is located on a side of the connecting portion away from the second substrate.

[0038] Optionally, the liquid crystal phase shifter further includes:

[0039] a driving circuit board provided on a side of the first substrate away from the second substrate or a side of the second substrate away from the first substrate; a grounding wire being provided on the driving circuit board;

[0040] A plurality of conductive posts are located in the transition region and pass through the first substrate and the liquid crystal layer; the first reference electrode and the second reference electrode are both electrically connected to the ground line through the conductive posts.

[0041] Optionally, both the first reference electrode and the second reference electrode are electrically connected to a plurality of the conductive pillars arranged along the first direction.

[0042] In a second aspect, the present disclosure provides a method for preparing a liquid crystal phase shifter as described above, comprising:

[0043] Determining the shape and size of the microstrip line according to a preset microstrip line impedance;

[0044] fitting an initial shape and an initial size of the first reference electrode and an initial shape and an initial size of the second reference electrode;

[0045] Modeling and optimizing the liquid crystal phase shifter based on the shape and size of the microstrip line, the initial shape and size of the first reference electrode, and the initial shape and size of the second reference electrode to determine and obtain target shapes and sizes of the first reference electrode and the second reference electrode corresponding to minimum insertion loss;

[0046] forming a corresponding microstrip line on the surface of the first substrate according to the shape and size of the microstrip line;

[0047] forming corresponding first and second reference electrodes on the surface of the second substrate according to the target shape and target size of the first reference electrode and the target shape and target size of the second reference electrode;

[0048] The first substrate and the second substrate are arranged opposite to each other, and a liquid crystal layer is formed between the microstrip line and the reference electrode layer.

[0049] In a third aspect, the present disclosure provides an antenna comprising a liquid crystal phase shifter as described in any one of the above items. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following detailed description, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0051] FIG1 is a top view of a liquid crystal phase shifter according to some embodiments of the present disclosure;

[0052] FIG2 is a cross-sectional structural diagram of a liquid crystal phase shifter in some embodiments of the present disclosure;

[0053] FIG3 is a top view of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0054] FIG4 is a top view of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0055] FIG5 is a top view of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0056] FIG6 is a top view of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0057] FIG7 is a top view of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0058] FIG8 is a top view of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0059] FIG9 is a top view of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0060] FIG10 is a top view of the structure of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0061] FIG11 is a top view of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0062] FIG12 is a flow chart of the steps for calculating exponential function curves of the first reference electrode and the second reference electrode in some embodiments of the present disclosure;

[0063] FIG13 is a top view of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0064] FIG14 is a top view of the structure of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0065] FIG15 is a top view of the structure of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0066] FIG16 is a top view of a liquid crystal phase shifter according to some other embodiments of the present disclosure;

[0067] FIG17 is a diagram showing the s11 simulation effect of a liquid crystal phase shifter in some embodiments of the present disclosure;

[0068] FIG18 is a diagram showing the s21 simulation effect of a liquid crystal phase shifter in some embodiments of the present disclosure;

[0069] FIG19 is a cross-sectional structural diagram of a liquid crystal phase shifter in some other embodiments of the present disclosure;

[0070] FIG20 is a top view of the structure of a liquid crystal phase shifter in some other embodiments of the present disclosure.

[0071] A, phase shift region B, transition region 1, first substrate

[0072] 2. Second substrate 3. Liquid crystal layer 4. Microstrip line

[0073] 5. Reference electrode layer 4A, first part 4B, second part

[0074] 51, first reference electrode 52, second reference electrode B1, first gap

[0075] B2, second gap 4C, feed part 4B1, first edge

[0076] 4B2, second edge 51B, first electrode portion 52B, second electrode portion

[0077] 51B2, third edge 51B1, fourth edge 52B2, fifth edge

[0078] 52B1, sixth edge B11, first gap B12, second gap

[0079] B21, third gap B22, fourth gap 511, first sub-electrode

[0080] 512, second sub-electrode 521, third sub-electrode 522, fourth sub-electrode

[0081] 41, first main body 42, first branch 501, first tooth

[0082] 502, second tooth portion 6, connecting portion 7, driving circuit board

[0083] 8. Conductive column 71, ground wire 9, adhesive layer DETAILED DESCRIPTION

[0084] The following describes the specific embodiments of the present disclosure in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure and are not intended to limit the present disclosure.

[0085] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0086] Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should have the usual meanings understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0087] As used herein, "parallel" and "perpendicular" include the conditions described and conditions similar to the conditions described, and the range of the similar conditions is within an acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range for approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range for approximate perpendicularity can also be, for example, a deviation within 5°.

[0088] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0089] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0090] The shape of an array antenna's directional pattern changes with the feed phase of the radiating elements, which is altered by a phase shifter. Therefore, research on low-cost, miniaturized phase shifters is worthy of attention in fields such as communications. Among related technologies, low-cost phase shifters include liquid crystal phase shifters, which are primarily implemented using microstrip lines. They utilize structures such as differential lines, branches, and windings to increase phase shifting and reduce losses. The principle is to achieve phase shifting by adding coupling capacitance. Therefore, to achieve a large phase shift, liquid crystal phase shifters are generally large, and are accompanied by problems such as high loss and poor impedance matching.

[0091] In order to solve at least one of the above problems, in a first aspect, an embodiment of the present disclosure provides a liquid crystal phase shifter.

[0092] In some embodiments, as shown in FIG. 1 , the present disclosure provides a liquid crystal phase shifter having a phase shift region A and transition regions B located on opposite sides of the phase shift region A.

[0093] As shown in FIG1 and FIG2 , the liquid crystal phase shifter includes: a first substrate 1 and a second substrate 2 arranged opposite to each other, a liquid crystal layer 3 , a microstrip line 4 and a reference electrode layer 5 .

[0094] The liquid crystal layer 3 is located between the first substrate 1 and the second substrate 2 .

[0095] The microstrip line 4 is located on a surface of the first substrate 1 facing the liquid crystal layer 3 and extends along a first direction. The microstrip line 4 includes a first portion 4A located in the phase shift region A and a second portion 4B located in the transition region B.

[0096] Reference electrode layer 5 is located on the surface of second substrate 2 facing liquid crystal layer 3. Reference electrode layer 5 includes first reference electrode 51 and second reference electrode 52 arranged along a second direction. The orthographic projections of first reference electrode 51 and second reference electrode 52 on first substrate 1 overlap with the orthographic projections of first portion 4A on first substrate 1. The first direction intersects the second direction; for example, the first direction may be perpendicular to the second direction.

[0097] In which, the orthographic projection of the second portion 4B on the first substrate 1 is located between the orthographic projection of the first reference electrode 51 and the orthographic projection of the second reference electrode 52 on the first substrate 1, a first gap B1 exists between the second portion 4B and the orthographic projection of the first reference electrode 51 on the first substrate 1, and a second gap B2 exists between the second portion 4B and the orthographic projection of the second reference electrode 52 on the first substrate 1.

[0098] The width of at least a portion of the first gap B1 decreases gradually or in a step-like manner along a direction approaching the phase shift region A; the width of at least a portion of the second gap B2 decreases gradually or in a step-like manner along a direction approaching the phase shift region A. The "gradual decrease" in the disclosed embodiment includes a continuous or sustained decrease, and the "step-like decrease" includes a situation where each step remains unchanged and the step-like decrease continues between adjacent steps.

[0099] In the disclosed embodiment, the microstrip line 4 and reference electrode layer 5 are located on the surfaces of the first substrate 1 and the second substrate 2 facing the liquid crystal layer 3, respectively, forming an off-plane CPW (coplanar waveguide) structure. The orthographic projections of the first reference electrode 51 and the second reference electrode 52 in the reference electrode layer 5 on the first substrate 1 overlap with the orthographic projections of the first portion 4A of the microstrip line 4 located in the phase shift region A on the first substrate 1. By applying a voltage to the liquid crystal layer in the overlapping region, the dielectric constant of the liquid crystal layer is changed, thereby achieving a phase shift effect. At the same time, the width of at least a portion of the first gap B1 between the second portion 4B of the microstrip line 4 located in the transition region and the orthographic projection of the first reference electrode 51 on the first substrate 1, as well as the width of at least a portion of the second gap B2 between the second portion 4B of the microstrip line 4 located in the transition region and the orthographic projection of the first reference electrode 51 on the first substrate 1, gradually decrease or decrease in a stepwise manner along the direction approaching the phase shift region A. This allows for rapid impedance changes in the microstrip line over a short distance, achieving broadband impedance matching, and further enabling a low-loss, low-reflection, ultra-wideband transition from the coplanar waveguide to the microstrip line.

[0100] Optionally, as shown in FIG1 , the microstrip line 4 further includes a feeding portion 4C connected to the two second portions 4B respectively.

[0101] Optionally, as shown in FIG1 , the microstrip line 4 is mirror-symmetrical about a symmetry axis L extending along the first direction. The symmetry axis L is a straight line passing through the geometric center of the microstrip line 4 .

[0102] Optionally, as shown in FIG. 1 , the first reference electrode 51 and the second reference electrode 52 are also mirror-symmetrical about the axis of symmetry L.

[0103] In other embodiments, as shown in FIG3 to FIG6 , the width W1 of the second portion 4B at the end away from the phase shift region A is greater than the width W2 of the second portion 4B at the end closer to the phase shift region A. The relationship between the width of the feeding portion 4C and the width W1 is not limited; for example, the width of the feeding portion 4C may be greater than or equal to W1.

[0104] In other embodiments, as shown in Figures 3 to 6 , the width of the second portion 4B decreases gradually or in a stepwise manner as it approaches the phase shift region A. In the embodiments shown in Figures 3 , 5 , and 6 , the width of the second portion 4B decreases gradually as it approaches the phase shift region A. In the embodiment shown in Figure 4 , the width of the second portion 4B decreases in a stepwise manner as it approaches the phase shift region A.

[0105] In other embodiments, as shown in Figures 3 to 6 , the second portion 4B has a first edge 4B1 proximate to the first reference electrode 51 and a second edge 4B2 proximate to the second reference electrode 52. The shapes of the first edge 4B1 and the second edge 4B2 are each selected from a straight line, a curve, and a folded line. In the embodiment shown in Figure 3 , the shapes of the first edge 4B1 and the second edge 4B2 are both straight lines. In the embodiment shown in Figure 4 , the shapes of the first edge 4B1 and the second edge 4B2 are both folded lines. In the embodiments shown in Figures 5 and 6 , the shapes of the first edge 4B1 and the second edge 4B2 are both curved lines.

[0106] In the embodiment of the present disclosure, the shapes and sizes of the first reference electrode 51, the second reference electrode 52 and the microstrip line 4 in the transition region B can ensure the required phase shift amount while miniaturizing the liquid crystal phase shifter and achieving broadband impedance matching.

[0107] Optionally, when the shapes of the first edge 4B1 and the second edge 4B2 are both straight lines, that is, the second portion 4B of the microstrip line 4 in the transition region B is trapezoidal, the width of the second portion 4B at one end close to the phase shift region A can be calculated using the coplanar waveguide impedance calculation formula, and the width at the end away from the phase shift region A can be calculated using the microstrip line impedance calculation formula.

[0108] Optionally, when the shapes of the first edge 4B1 and the second edge 4B2 are both broken lines, the microstrip line 4 forms a stepped transition structure in the second part 4B of the transition zone, which can further achieve rapid impedance changes and loss reduction. Among them, the width of the second part 4B close to the phase shift zone A can be calculated by the coplanar waveguide impedance calculation formula, and the width of the end away from the phase shift zone A can be calculated by the microstrip line impedance calculation formula. The stepped transition structure formed by the broken line can be set to three roughly equally divided sections, and the width of each section gradually decreases. In this process, simulation can be performed first according to actual conditions, and then timely adjustment and optimization can be made according to the simulation results (requirements of s11). The width of the second part 4B gradually decreases after several changes, achieving the same gradually decreasing trend as the first gap B1 and the second gap B2, thereby improving the impedance matching of the microstrip line 4.

[0109] In some other embodiments, as shown in FIG. 7 , the first reference electrode 51 includes a first electrode portion 51B located in the transition region B, and the second reference electrode 52 includes a second electrode portion 52B located in the transition region B.

[0110] An end of the first electrode portion 51B close to the phase shift region A has a first width W3 in the second direction, and an end of the first electrode portion 51B away from the phase shift region A has a second width W4 in the second direction.

[0111] An end of the second electrode portion 52B close to the phase shift region A has a third width W5 in the second direction, and an end of the second electrode portion 52B away from the phase shift region A has a fourth width W6 in the second direction.

[0112] The first width W3 is greater than the second width W4, and / or the third width W5 is greater than the fourth width W6.

[0113] In other embodiments, as shown in FIG. 7 to FIG. 10 , the width of the first electrode portion 51B gradually decreases along a direction approaching the phase shift region A, and / or the width of the second electrode portion 52B gradually decreases along a direction approaching the phase shift region A.

[0114] In other embodiments, as shown in Figures 7 to 10 , the first electrode portion 51B has a third edge 51B2 proximal to the microstrip line 4 and a fourth edge 51B1 distal to the microstrip line 4. The second electrode portion 52B has a fifth edge 52B2 proximal to the microstrip line 4 and a sixth edge 52B1 distal to the microstrip line 4. The fourth edge 51B1 and the sixth edge 52B1 are both straight lines extending along the first direction. The third edge 51B2 and the fifth edge 52B2 are each selected from a straight line, a curve, and a broken line.

[0115] In the embodiment shown in FIG7 , the third edge 51B2 and the fifth edge 52B2 are both straight lines. In the embodiments shown in FIG8 and FIG9 , the third edge 51B2 and the fifth edge 52B2 are both curved lines. In the embodiment shown in FIG10 , the third edge 51B2 and the fifth edge 52B2 are both broken lines.

[0116] Optionally, when the third edge 51B2 and the fifth edge 52B2 are both straight lines, that is, the first reference electrode 51 and the second reference electrode 52 are designed to be trapezoidal in the transition region B. The trapezoidal shape of the second portion 4B of the microstrip line 4 in the transition region B, and the oblique line shape of the first reference electrode 51 and the second reference electrode 52 in the transition region B, enable the liquid crystal phase shifter to achieve rapid impedance changes in the microstrip line 4 over a relatively short distance, thereby achieving broadband impedance matching. Furthermore, the gradient dual-conductor structure formed by the first reference electrode 51 and the second reference electrode 52 in the transition region B effectively implements quasi-TEM (Transverse Electric and Magnetic Field) mode transmission.

[0117] Optionally, the second width W4 of the end of the first electrode portion 51B away from the phase shift region A in the second direction, and the fourth width W6 of the end of the second electrode portion 52B away from the phase shift region A in the second direction, can both be 0 or close to 0. That is, the third edge 51B2 and the fourth edge 51B1 converge at a point on the side away from the phase shift region A; and the fifth edge 52B2 and the sixth edge 52B1 converge at a point on the side away from the phase shift region A.

[0118] In other embodiments, when the second width W4 of the end of the first electrode portion 51B away from the phase-shift region A in the second direction and the fourth width W6 of the end of the second electrode portion 52B away from the phase-shift region A in the second direction are both 0 or close to 0, as shown in FIG11 , the third edge 51B2 is a curve that conforms to an exponential function; and / or the fifth edge 52B2 is a curve that conforms to an exponential function.

[0119] Optionally, in some embodiments, as shown in Figure 11, conforming to the exponential function means: taking the intersection point p of the third edge 51B2 and the fourth edge 51B1 as the origin, the first direction as the positive direction of the x-axis, and the second direction as the positive direction of the y-axis, the coordinates of each point on the third edge 51B2 are located on the exponential function curve; or / and, taking the intersection point q of the fifth edge 52B2 and the sixth edge 52B1 as the origin, the first direction as the positive direction of the x-axis, and the second direction as the negative direction of the y-axis, the coordinates of each point on the fifth edge 51B2 are located on the exponential function curve.

[0120] When the third edge 51B2 is a curve that conforms to an exponential function, and the fifth edge 52B2 is a curve that conforms to an exponential function, the first electrode portion 51B and the second electrode portion 52B form a double exponential transition structure. Specifically, in some embodiments, as shown in FIG12 , the design steps of the double exponential transition structure include:

[0121] S1. Determine the performance parameters of microstrip line 4. For example, set the impedance of the microstrip line to 50Ω.

[0122] S2. Calculate the widths of both ends of the second portion 4B according to the characteristic impedance calculation formula of the microstrip line 4 and the CPW impedance calculation formula.

[0123] S3 . Fitting an exponential function relationship between the third edge 51B2 of the first electrode portion 51B and the fifth edge 52B2 of the second electrode portion 52B.

[0124] Optionally, during the fitting process, Matlab is used to fit a double exponential function relationship based on the impedance matching principle.

[0125] S4. Simulate and optimize to obtain the exponential function with the minimum insertion loss.

[0126] Optionally, the simulation optimization includes: establishing a model in HFSS and performing optimization based on insertion loss.

[0127] The double exponential transition structure can achieve lower insertion loss and smaller transition zone size.

[0128] In other embodiments, as shown in FIG13 , the first gap B1 includes a first gap portion B11 and a second gap portion B12 located between the first gap portion B11 and the phase shift region A. The width of the second gap portion B12 gradually decreases or decreases in a step-like manner as it approaches the phase shift region A. The width of the first gap portion B11 is smaller than the maximum width of the second gap portion B12. Alternatively, the second gap B2 includes a third gap portion B21 and a fourth gap portion B22 located between the third gap portion B21 and the phase shift region A. The width of the fourth gap portion B22 gradually decreases or decreases in a step-like manner as it approaches the phase shift region A. The width of the third gap portion B21 is smaller than the maximum width of the fourth gap portion B22.

[0129] In other embodiments, as shown in FIG13 , the first reference electrode 51 includes a first electrode portion 51B located in the transition region B. The first electrode portion 51B includes a first sub-electrode 511 adjacent to the first gap portion B11 and a second sub-electrode 512 adjacent to the second gap portion B12. The width of the first sub-electrode 511 in the second direction is greater than the minimum width of the second sub-electrode 512 in the second direction. The width of the second sub-electrode 512 increases gradually or in a stepwise manner as it approaches the phase-shift region A.

[0130] The second reference electrode 52 includes a second electrode portion 52B located in the transition region B. The second electrode portion 52B includes a third sub-electrode 521 adjacent to the first gap B11 and a fourth sub-electrode 522 adjacent to the second gap B12. The width of the third sub-electrode 521 in the second direction is greater than the minimum width of the fourth sub-electrode 522 in the second direction. The width of the third sub-electrode 511 increases gradually or in a stepwise manner as it approaches the phase shift region A.

[0131] In other embodiments, as shown in FIG13 , an edge L1 of the first electrode portion 51B distal from the microstrip line 4 is a straight line extending along the first direction; an edge of the first electrode portion 51B proximate to the microstrip line 4 includes a first sub-edge L2 adjacent to the first gap B11 and a second sub-edge L3 adjacent to the second gap B12; the first sub-edge L2 is a straight line extending along the first direction, and the second sub-edge L3 is a zigzag line. Alternatively, or alternatively, an edge L4 of the second electrode portion 52B distal from the microstrip line 4 is a straight line extending along the first direction; an edge of the second electrode portion 52B proximate to the microstrip line 4 includes a third sub-edge L5 adjacent to the first gap B11 and a fourth sub-edge L6 adjacent to the second gap B12; the third sub-edge L5 is a straight line extending along the first direction, and the fourth sub-edge L6 is a zigzag line.

[0132] In other embodiments, as shown in Figure 14, the first part 4A includes: a first main body portion 41 extending along the first direction (the portion framed by the dotted line in Figure 14), and a plurality of first branch portions 42 cross-connected to the first main body portion 41; the first main body portion 41 is connected to the second part 4B.

[0133] The first reference electrode 51 located in the phase shift region has M first teeth 501 , wherein M1 first teeth 501 overlap with the orthographic projection of the first branch portion 42 on the first substrate 1 ; M1≤M, M1>0.

[0134] The second reference electrode 52 located in the phase shift region has M second teeth 502 , wherein N1 second teeth 502 overlap with the orthographic projection of the first branch portion 42 on the first substrate 1 ; N1≤N, N1>0.

[0135] Optionally, the number of the first branch portions 42 , the first tooth portions 501 , and the second tooth portions 502 may be set to be the same.

[0136] In other embodiments, as shown in FIG14 , among the M1 first teeth 501 , the overlapping area of ​​the orthographic projections of the M2 first teeth 501 and the first branch portion 42 on the first substrate 1 gradually increases in the direction approaching the center O of the phase shift region A; M1 ≥ M2 > 2.

[0137] Among the N1 second teeth 502 , the overlapping areas of the N2 second teeth 502 and the orthographic projections of the first branch portion 42 on the first substrate 1 gradually increase in a direction approaching the center O of the phase shift region; N1≥N2>2.

[0138] Optionally, in the embodiment shown in FIG14 , the number of first branch portions 42 cross-connected with the first main body portion 41 is 13, and the number of first tooth portions 501 and second tooth portions 502 is also 13. The 12 first tooth portions 501 and the 12 second tooth portions 502 overlap with the orthographic projections of the 12 first branch portions 42 on the first substrate 1. The first tooth portion 501 and the second tooth portion 502 farthest from the center O of the phase shift zone do not overlap with the orthographic projection of the first branch portion 42 farthest from the center O of the phase shift zone on the first substrate 1. In the direction approaching the center O of the phase shift zone, the area of ​​overlap between the first tooth portion 501 and the second tooth portion 502 and the orthographic projection of the first branch portion 42 on the first substrate 1 first gradually decreases and then gradually increases. Finally, the area of ​​overlap between the three first tooth portions 501 and the second tooth portion 502 closest to the center O of the phase shift zone and the orthographic projection of the first branch portion 42 on the first substrate 1 remains unchanged. The design of the overlapping area of ​​the first tooth portion 501 , the second tooth portion 502 and the first branch portion 42 in the embodiment of the present disclosure can enhance the impedance matching of the microstrip line 4 .

[0139] Optionally, the number of the first branch portion 42 , the first tooth portion 501 and the second tooth portion 502 can be set as needed, for example, can be 15 to 20, such as 15, 18 or 20.

[0140] In other embodiments, as shown in Figures 15 and 16, the liquid crystal phase shifter further includes at least one connecting portion 6; the two ends of the connecting portion 6 are respectively connected to the first reference electrode 51 and the second reference electrode 52. At least a portion of the liquid crystal layer 3 is located on the side of the connecting portion 6 away from the second substrate 2. Alternatively, as shown in Figure 15, the connecting portion 6 can be suspended between the first reference electrode 51 and the second reference electrode 52. Alternatively, the connecting portion 6 can be disposed between the surface of the first substrate 1 between the first reference electrode 51 and the second reference electrode 52 and the liquid crystal layer 3. Alternatively, as shown in Figure 16, the two ends of the connecting portion 6 can be respectively disposed on the surfaces of the first reference electrode 51 and the second reference electrode 52 away from the first substrate 1.

[0141] Optionally, the material of the connecting portion 6 is metal.

[0142] After the connection portion 6 is provided, it is equivalent to forming a metal bridge between the first reference electrode 51 and the second reference electrode 52 , and the loss of the entire liquid crystal phase shifter device is reduced.

[0143] The technical effects of the embodiments of the present disclosure are further described below in conjunction with simulation results of specific embodiments.

[0144] In some embodiments, the impedance of the second portion 4B of the microstrip line 4 in the transition region B is set to 50Ω, and the second portion 4B is designed to be trapezoidal. The width of the trapezoidal second portion 4B at the end away from the phase shift region A is calculated using the microstrip line impedance calculation formula, and the width of the trapezoidal second portion 4B at the end close to the phase shift region A is calculated using the coplanar waveguide impedance calculation formula. The first edge 4B1 of the second portion 4B close to the first reference electrode 51 and the second edge 4B2 close to the second reference electrode 52 are both designed to be straight lines. The first reference electrode 51 and the second reference electrode 52 are also designed to be trapezoidal.

[0145] Figure 17 compares the return loss s11 before and after the metal bridge is installed. It can be seen from Figure 17 that the presence of the metal bridge improves the s11 of the phase shifter (the curve with a triangle represents s11 with the metal bridge installed). Similarly, Figure 18 compares the insertion loss s21 before and after the metal bridge is installed. It can be seen from Figure 18 that after the metal bridge is installed (the curve with a triangle represents s21 with the metal bridge installed), s21 decreases, indicating that the overall device loss is reduced.

[0146] In other embodiments, as shown in FIG19 , the liquid crystal phase shifter further includes: a driving circuit board 7 disposed on a side of the first substrate 1 away from the second substrate 2 or a side of the second substrate 2 away from the first substrate 1 , and a plurality of conductive pillars 8 .

[0147] A ground line 71 is provided on the driver circuit board 7. A conductive post 8 is located in the transition region B and passes through the first substrate 1 and the liquid crystal layer 3. The first reference electrode 51 and the second reference electrode 52 are both electrically connected to the ground line 71 via the conductive post 8. The ground line 71 of the driver circuit board 7 also serves as the ground for the first reference electrode 51, the second reference electrode 52, and the microstrip line 4.

[0148] The design of the conductive pillar 8 can enable the first reference electrode 51 and the second reference electrode 52 to have a solid grounding structure.

[0149] The field of the microstrip line 4 is concentrated between the microstrip line 4 and the ground line 71, while the field of the CPW structure is concentrated between the first reference electrode 51, the second reference electrode 52, and the microstrip line 4. Using the ground line 71 of the driver circuit board 7 as the ground for the first reference electrode 51, the second reference electrode 52, and the microstrip line 4 can enhance the field confinement of the ground line 71, thereby reducing insertion loss. This is especially true in high-frequency bands, resulting in lower losses.

[0150] Optionally, the grounding line 71 is located on a side of the driving circuit board 7 close to the first substrate 1 or the second substrate 2 .

[0151] Optionally, an adhesive layer 9 is further provided between the driving circuit board 7 and the first substrate 1. The adhesive layer 9 bonds the driving circuit board 7 and the first substrate 1 together.

[0152] In some other embodiments, as shown in FIG. 20 , the first reference electrode 51 and the second reference electrode 52 are both electrically connected to a plurality of conductive pillars 8 arranged along the first direction.

[0153] A plurality of conductive pillars 8 are used in the first reference electrode 51 and the second reference electrode 52 to form a metallized via array arranged along the first direction, which can reduce the characteristic impedance of the microstrip line 4 .

[0154] When a coplanar waveguide uses a metallized via array, most of the electromagnetic field is confined between the central conductive strip and the metal grounds on both sides, reducing radiation loss and interference with adjacent transmission lines, while increasing the effective dielectric constant and reducing the characteristic impedance.

[0155] In summary, the disclosed embodiments form an out-of-plane CPW structure by disposing a microstrip line 4 and a reference electrode layer 5 on the surfaces of the first and second substrates 1 and 2 facing the liquid crystal layer 3, respectively. The structure also provides a liquid crystal phase shifter based on the out-of-plane CPW structure. Specifically, by designing the shape of the second portion 4B of the microstrip line 4 in the transition region B, the shape of the first electrode portion 51B of the first reference electrode 51 in the transition region B, and / or the shape of the second electrode portion 51B of the second reference electrode 52 in the transition region B, the width of at least a portion of the first gap B1 between the second portion 4B of the microstrip line 4 in the transition region and the orthographic projection of the first reference electrode 51 on the first substrate 1, as well as the width of at least a portion of the second gap B2 between the second portion 4B of the microstrip line 4 in the transition region and the orthographic projection of the first reference electrode 51 on the first substrate 1, gradually decrease or decrease in a stepwise manner in a direction approaching the phase shift region A, thereby shortening the length of the transition region between the microstrip line and the coplanar waveguide. In addition, by setting a conductive column 8 between the first reference electrode 51 and the second reference electrode 52 and the metal wire 71 of the driving circuit board 7, and setting a connecting portion 6 between the first reference electrode 51 and the second reference electrode 52 to form a metal bridge structure, a broadband, low-loss, miniaturized liquid crystal phase shifter is achieved.

[0156] In a second aspect, an embodiment of the present disclosure provides a method for preparing a liquid crystal phase shifter provided by any embodiment of the present disclosure, comprising steps S10 to S60.

[0157] S10 , determining the shape and size of the microstrip line 4 according to the preset impedance of the microstrip line 4 .

[0158] Specifically, step S10 includes steps S101 and S102:

[0159] S101. Set the impedance of microstrip line 4.

[0160] S102. Based on the set impedance of the microstrip line 4, a formula for calculating the characteristic impedance of the microstrip line is used to calculate the width of the second portion 4B of the microstrip line 4 in the transition region B, which is away from the phase shift region A. A formula for calculating the impedance of the coplanar waveguide is used to calculate the width of the second portion 4B of the microstrip line 4 in the transition region B, which is close to the phase shift region A.

[0161] S20 , fitting the initial shape and initial size of the first reference electrode 51 and the initial shape and initial size of the second reference electrode 52 .

[0162] Specifically, for example, MATLAB may be used to fit the exponential function relationship of the third edge 51B2 of the first reference electrode 51 and / or the exponential function relationship of the fifth edge 52B2 of the second reference electrode 52 .

[0163] S30. Based on the shape and size of the microstrip line 4, the initial shape and initial size of the first reference electrode 51, and the initial shape and initial size of the second reference electrode 52, the liquid crystal phase shifter is modeled and optimized by simulation to determine and obtain the target shape and target size of the first reference electrode 51 and the target shape and target size of the second reference electrode 52 corresponding to the minimum insertion loss.

[0164] Specifically, for example, HFSS (High Frequency Structural Simulator) simulation software may be used for simulation optimization.

[0165] S40 , forming a corresponding microstrip line on the surface of the first substrate 1 according to the shape and size of the microstrip line 4 .

[0166] S50 , forming corresponding first reference electrodes 51 and second reference electrodes 52 on the surface of the second substrate 2 according to the target shape and target size of the first reference electrode 51 and the target shape and target size of the second reference electrode 52 .

[0167] S60 , placing the first substrate 1 and the second substrate 2 opposite to each other, and forming a liquid crystal layer 3 between the microstrip line 4 and the reference electrode layer 5 .

[0168] In a third aspect, an embodiment of the present disclosure provides an antenna comprising the liquid crystal phase shifter described in any one of the embodiments of the present disclosure.

[0169] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present disclosure, and the present disclosure is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present disclosure, and such modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. A liquid crystal phase shifter comprising a phase shift region and transition regions located on opposite sides of the phase shift region; wherein: The liquid crystal phase shifter comprises: a first substrate and a second substrate arranged opposite to each other; a liquid crystal layer, located between the first substrate and the second substrate; a microstrip line, located on a surface of the first substrate facing the liquid crystal layer and extending along a first direction, the microstrip line comprising: a first portion located in the phase shift region and a second portion located in the transition region; a reference electrode layer located on a surface of the second substrate facing the liquid crystal layer; the reference electrode layer comprising a first reference electrode and a second reference electrode arranged along a second direction; orthographic projections of the first reference electrode and the second reference electrode on the first substrate overlap with an orthographic projection of the first portion on the first substrate; and the first direction intersects the second direction; wherein the orthographic projection of the second portion on the first substrate is located between the orthographic projections of the first reference electrode and the second reference electrode on the first substrate; a first gap exists between the second portion and the orthographic projection of the first reference electrode on the first substrate, and a second gap exists between the second portion and the orthographic projection of the second reference electrode on the first substrate; The width of at least a portion of the first gap decreases gradually or in a step-like manner in a direction approaching the phase shift zone; the width of at least a portion of the second gap decreases gradually or in a step-like manner in a direction approaching the phase shift zone.

2. The liquid crystal phase shifter according to claim 1, wherein The width of the second portion at an end away from the phase shifting region is greater than the width of the second portion at an end close to the phase shifting region.

3. The liquid crystal phase shifter according to claim 2, wherein: The width of the second portion decreases gradually or in a step-like manner along a direction approaching the phase shift region.

4. The liquid crystal phase shifter according to claim 2 or 3, wherein: the second portion having a first edge proximate to the first reference electrode and a second edge proximate to the second reference electrode; The shapes of the first edge and the second edge are both selected from: a straight line, a curve, and a broken line.

5. The liquid crystal phase shifter according to any one of claims 1 to 4, wherein: The first reference electrode includes a first electrode portion located in the transition region, and the second reference electrode includes a second electrode portion located in the transition region; An end of the first electrode portion close to the phase shift region has a first width in the second direction, and an end of the first electrode portion away from the phase shift region has a second width in the second direction; an end of the second electrode portion close to the phase shift region has a third width in the second direction, and an end of the second electrode portion away from the phase shift region has a fourth width in the second direction; Wherein, the first width is greater than the second width; and / or the third width is greater than the fourth width.

6. The liquid crystal phase shifter according to claim 5, wherein: The width of the first electrode portion gradually decreases in a direction approaching the phase shift region; and / or, The width of the second electrode portion gradually decreases along a direction approaching the phase shift region.

7. The liquid crystal phase shifter according to claim 5 or 6, wherein: The first electrode portion has a third edge close to the microstrip line and a fourth edge away from the microstrip line, and the second electrode portion has a fifth edge close to the microstrip line and a sixth edge away from the microstrip line; The fourth edge and the sixth edge are both straight lines extending along the first direction; The shapes of the third edge and the fifth edge are both selected from: a straight line, a curve and a broken line.

8. The liquid crystal phase shifter according to claim 7, wherein: The third edge is a curve that conforms to an exponential function; and / or the fifth edge is a curve that conforms to an exponential function.

9. The liquid crystal phase shifter according to claim 1, wherein: The first gap includes a first gap portion and a second gap portion located between the first gap portion and the phase shift zone, wherein the width of the second gap portion gradually decreases or decreases in a step-like manner in a direction approaching the phase shift zone; the width of the first gap portion is smaller than the maximum width of the second gap portion; and / or, The second gap includes a third gap portion and a fourth gap portion located between the third gap portion and the phase shift zone. The width of the fourth gap portion gradually decreases or decreases in a step-like manner along a direction approaching the phase shift zone. The width of the third gap portion is smaller than the maximum width of the fourth gap portion.

10. The liquid crystal phase shifter according to claim 9, wherein: The first reference electrode includes a first electrode portion located in the transition region; the first electrode portion includes a first sub-electrode adjacent to the first gap portion, and a second sub-electrode adjacent to the second gap portion, wherein the width of the first sub-electrode in the second direction is greater than the minimum width of the second sub-electrode in the second direction; and the width of the second sub-electrode gradually increases or increases in a stepwise manner along a direction approaching the phase shift region; and / or, The second reference electrode includes a second electrode portion located in the transition region; the second electrode portion includes a third sub-electrode adjacent to the first gap portion, and a fourth sub-electrode adjacent to the second gap portion, wherein the width of the third sub-electrode in the second direction is greater than that of the fourth sub-electrode. The sub-electrode has a minimum width in the second direction; the width of the third sub-electrode increases gradually or in a step-like manner along the direction approaching the phase-shifting region.

11. The liquid crystal phase shifter according to claim 10, wherein: The edge of the first electrode portion away from the microstrip line is a straight line extending along a first direction; The edge of the first electrode portion close to the microstrip line includes: a first sub-edge adjacent to the first gap portion, and a second sub-edge adjacent to the second gap portion; the first sub-edge is a straight line extending along a first direction, and the second sub-edge is a broken line; and / or, The edge of the second electrode portion away from the microstrip line is a straight line extending along the first direction; the edge of the second electrode portion close to the microstrip line includes: a third sub-edge adjacent to the first gap portion, and a fourth sub-edge adjacent to the second gap portion; the third sub-edge is a straight line extending along the first direction, and the fourth sub-edge is a broken line.

12. The liquid crystal phase shifter according to any one of claims 1 to 11, wherein: The first part includes: a first main body extending along a first direction, and a plurality of first branches cross-connected with the first main body; the first main body is connected to the second part; The portion of the first reference electrode located in the phase shift region has M first teeth, wherein M1 first teeth overlap with the orthographic projection of the first branch portion on the first substrate; M1≤M, M1>0; The portion of the second reference electrode located in the phase-shifting region has N second teeth, wherein N1 second teeth overlap with the orthographic projection of the first branch portion on the first substrate; N1≤N, N1>0.

13. The liquid crystal phase shifter according to claim 12, wherein: Among the M1 first tooth portions, an area of overlap between the orthographic projections of the M2 first tooth portions and the first branch portion on the first substrate gradually increases in a direction approaching the center of the phase shift region; M1≥M2>2; Among the N1 second teeth, overlapping areas of the N2 second teeth and the orthographic projections of the first branch on the first substrate gradually increase in a direction approaching the center of the phase shift region; N1≥N2>2.

14. The liquid crystal phase shifter according to any one of claims 1 to 13, wherein: The liquid crystal phase shifter further includes at least one connecting portion; two ends of the connecting portion are respectively connected to the first reference electrode and the second reference electrode; at least a portion of the liquid crystal layer is located on a side of the connecting portion away from the second substrate.

15. The liquid crystal phase shifter according to any one of claims 1 to 14, wherein: The liquid crystal phase shifter further includes: a driving circuit board provided on a side of the first substrate away from the second substrate or a side of the second substrate away from the first substrate; a grounding wire being provided on the driving circuit board; A plurality of conductive posts are located in the transition region and pass through the first substrate and the liquid crystal layer; the first reference electrode and the second reference electrode are both electrically connected to the ground line through the conductive posts.

16. The liquid crystal phase shifter according to claim 15, wherein: The first reference electrode and the second reference electrode are both electrically connected to the plurality of conductive pillars arranged along the first direction.

17. A method for preparing a liquid crystal phase shifter according to any one of claims 1 to 16, comprising: Determining the shape and size of the microstrip line according to a preset microstrip line impedance; fitting an initial shape and an initial size of the first reference electrode and an initial shape and an initial size of the second reference electrode; Modeling and optimizing the liquid crystal phase shifter based on the shape and size of the microstrip line, the initial shape and size of the first reference electrode, and the initial shape and size of the second reference electrode to determine and obtain target shapes and sizes of the first reference electrode and the second reference electrode corresponding to minimum insertion loss; forming a corresponding microstrip line on the surface of the first substrate according to the shape and size of the microstrip line; forming corresponding first and second reference electrodes on the surface of the second substrate according to the target shape and target size of the first reference electrode and the target shape and target size of the second reference electrode; The first substrate and the second substrate are arranged opposite to each other, and a liquid crystal layer is formed between the microstrip line and the reference electrode layer.

18. An antenna, wherein: The device comprises the liquid crystal phase shifter according to any one of claims 1 to 16.

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