Semiconductor device

Abstract

This semiconductor device includes: a first lead including a first pad part; a first semiconductor element separated in a thickness direction of the first pad part; and a sealing resin covering the first semiconductor element and the first pad part. The sealing resin includes a first resin side-surface facing one side in a first direction orthogonal to the thickness direction. The first resin side-surface has formed thereon a resin injection mark having a surface rougher than other regions of the first resin side-surface. A ratio of a length of the resin injection mark in the thickness direction to a length of the sealing resin in the thickness direction is from 20% to 50%.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes leads, a semiconductor element, wires, and an encapsulating resin. The semiconductor element is mounted on a die pad of the leads. The wires are electrically connected to the semiconductor element and the leads. The encapsulating resin covers the semiconductor element, the wires, and a portion of the leads. When forming the encapsulating resin, fluidized resin is poured into a cavity of a mold, filling it, and then solidifying. When manufacturing multiple semiconductor devices at once, the semiconductor elements and lead materials constituting the semiconductor device are placed in each of multiple cavities, and the fluidized resin is poured into each of the multiple cavities sequentially. Here, the fluidity of the resin deteriorates in cavities downstream from the resin supply side, which can cause problems such as wire sweep.

[0003] Japanese Patent Application Laid-Open No. 2019-121745

[0004] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device in which the fluidity of the resin during the formation of the sealing resin is improved.

[0005] A first aspect of the present disclosure provides a semiconductor device comprising: a first lead having a first pad portion; a first semiconductor element disposed on one side of the first pad portion in a thickness direction; and a sealing resin covering the first semiconductor element and the first pad portion. The sealing resin has a first resin side surface facing one side in a first direction perpendicular to the thickness direction. The first resin side surface has a resin injection mark formed thereon, the resin injection mark having a surface rougher than other regions of the first resin side surface. The ratio of the length of the resin injection mark in the thickness direction to the length of the sealing resin in the thickness direction is 20% or more and 50% or less.

[0006] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0007] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a perspective view showing a main portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. 4 is a perspective view showing a main portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. 5 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 6 is a bottom view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 7 is a front view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 8 is a side view showing a semiconductor device according to the first embodiment of the present disclosure. FIG. 9 is a plan view showing a main portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. 10 is a bottom view showing a main portion of the semiconductor device according to the first embodiment of the present disclosure. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 10. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 10. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 10. FIG. 14 is a side view illustrating resin injection marks. FIG. 15 is a bottom view showing a main portion of a semiconductor device according to a second embodiment of the present disclosure. FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG. 15. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 15. FIG. 18 is a side view illustrating resin injection marks. FIG. 19 is a bottom view illustrating a main portion of a semiconductor device according to a modified example of the second embodiment of the present disclosure. FIG. 20 is a side view illustrating resin injection marks. FIG. 21 is a perspective view illustrating a main portion of a semiconductor device according to a third embodiment of the present disclosure. FIG. 22 is a bottom view illustrating a main portion of a semiconductor device according to the third embodiment of the present disclosure. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 22. FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 22. FIG. 25 is a side view illustrating resin injection marks. FIG. 26 is a bottom view illustrating a main portion of a semiconductor device according to a fourth embodiment of the present disclosure. FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG. 26. Fig. 28 is a cross-sectional view taken along line XXVIII-XXVIII in Fig. 26. Fig. 29 is a side view for explaining the resin injection traces.

[0008] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0009] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0010] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0011] 1 to 14 show a semiconductor device according to a first embodiment of the present disclosure. The semiconductor device A1 of this embodiment includes a first semiconductor element 11, a first lead 2, a second lead 3, a third lead 4, a first bonding wire 51, a second bonding wire 52, and a sealing resin 6. The use of the semiconductor device A1 is not limited in any way, and it may be used in electronic devices equipped with a power conversion circuit, such as a DC-DC converter.

[0012] 1 and 2 are perspective views showing the semiconductor device A1. FIGS. 3 and 4 are perspective views of a main portion of the semiconductor device A1. In FIGS. 3 and 4, the outline of the sealing resin 6 is indicated by an imaginary line (two-dot chain line). FIG. 5 is a plan view showing the semiconductor device A1. FIG. 6 is a bottom view showing the semiconductor device A1. FIG. 7 is a front view showing the semiconductor device A1. FIG. 8 is a side view showing the semiconductor device A1. FIG. 9 is a plan view of a main portion of the semiconductor device A1. FIG. 10 is a bottom view of a main portion of the semiconductor device A1. In FIGS. 9 and 10, the outline of the sealing resin 6 is indicated by an imaginary line (two-dot chain line). FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 10. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 10. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 10. FIG. 14 is a side view for explaining a resin injection mark 631, which will be described later.

[0013] In these figures, the thickness direction in the present disclosure is defined as the "thickness direction z." The direction perpendicular to the thickness direction z is referred to as the "first direction x." The direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y." Furthermore, one side of the thickness direction z corresponds to the "one side of the thickness direction" in the present disclosure and is referred to as the "z1 side of the thickness direction z," and the other side of the thickness direction z corresponds to the "other side of the thickness direction" in the present disclosure and is referred to as the "z2 side of the thickness direction z." One side of the first direction x corresponds to the "one side of the first direction" in the present disclosure and is referred to as the "x1 side of the first direction x," and the other side of the first direction x corresponds to the "other side of the first direction" in the present disclosure and is referred to as the "x2 side of the first direction x." One side of the second direction y is referred to as the "y1 side of the second direction y," and the other side of the second direction y is referred to as the "y2 side of the second direction y."

[0014] The first semiconductor element 11 is an element that performs the electrical functions of the semiconductor device A1. In this embodiment, the first semiconductor element 11 is a three-terminal element having three electrodes, such as a metal-oxide-semiconductor field-effect transistor (MOSFET). Alternatively, the first semiconductor element 11 may be a switching element such as an insulated gate bipolar transistor (IGBT) or a diode. In the description of the semiconductor device A1, the first semiconductor element 11 is an n-channel, vertically structured MOSFET. The first semiconductor element 11 has a rectangular shape when viewed in the thickness direction z. As shown in FIGS. 4 and 10 to 13 , the first semiconductor element 11 includes a first element body 110, a first back surface electrode 111, a first main surface electrode 112, and a second main surface electrode 113.

[0015] The first element body 110 includes a semiconductor. The composition of the semiconductor includes, for example, Si (silicon), SiC (silicon carbide), etc. Furthermore, unlike the present embodiment, when the first semiconductor element 11 is a switching element with a lateral structure, the first element body 110 includes, for example, GaN (gallium nitride).

[0016] 11 to 13 , the first back surface electrode 111 is disposed on the z2 side in the thickness direction z of the first element body 110. A current corresponding to the power before being converted by the first semiconductor element 11 flows through the first back surface electrode 111. In other words, the first back surface electrode 111 corresponds to the drain electrode of the first semiconductor element 11.

[0017] The first principal surface electrode 112 is disposed on the z1 side in the thickness direction z of the first element body 110. A current corresponding to the power converted by the first semiconductor element 11 flows through the first principal surface electrode 112. In other words, the first principal surface electrode 112 corresponds to the source electrode of the first semiconductor element 11.

[0018] The second principal surface electrode 113 is disposed on the z1 side in the thickness direction z of the first element body 110. A gate voltage for driving the first semiconductor element 11 is applied to the second principal surface electrode 113. In other words, the second principal surface electrode 113 corresponds to the gate electrode of the first semiconductor element 11. When viewed in the thickness direction z, the area of ​​the second principal surface electrode 113 is smaller than the area of ​​the first principal surface electrode 112.

[0019] The first lead 2, the second lead 3, and the third lead 4 are formed, for example, by punching or bending a metal plate (lead frame). The first lead 2, the second lead 3, and the third lead 4 contain, for example, Cu (copper) or Ni (nickel). In this embodiment, the constituent material of each of the first lead 2, the second lead 3, and the third lead 4 contains Fe (iron) and Ni (nickel), and is, for example, a 42 alloy. The constituent materials of each lead in other embodiments described below are similar to this.

[0020] As shown in FIGS. 2 to 13, the first lead 2 includes a first pad portion 21 and a first terminal portion 22 .

[0021] The first pad portion 21 is a portion on which the first semiconductor element 11 is mounted. The first pad portion 21 has a first main surface 201 and a first back surface 202. The first main surface 201 is a surface facing the z1 side in the thickness direction z. The first back surface 202 is a surface facing the z2 side in the thickness direction z. The first main surface 201 may be covered with, for example, a silver (Ag) plating layer.

[0022] As shown in FIGS. 4 and 10 to 13 , the first semiconductor element 11 is bonded to the first main surface 201 of the first pad portion 21 via a conductive bonding layer 19. In this embodiment, the conductive bonding layer 19 is made of a conductive material. The first back electrode 111 of the first semiconductor element 11 faces the first main surface 201. The first back electrode 111 and the first main surface 201 are electrically connected via the conductive bonding layer 19. The first semiconductor element 11 is mounted on the first main surface 201 of the first pad portion 21 by die bonding. The specific configuration of the conductive bonding layer 19 is not particularly limited, and it may be formed, for example, by firing a paste containing a metal such as silver (Ag). Instead of firing a metal paste, the conductive bonding layer 19 may be made of an Au—Si eutectic alloy or solder (a metal containing tin and silver). The configuration of the conductive bonding layer 19 for bonding the second semiconductor element 12 and the like in other embodiments described below is similar to the conductive bonding layer 19 described above.

[0023] The first terminal 22 is connected to the y1 side of the first pad 21 in the second direction y. The first terminal 22 extends in the second direction y when viewed in the thickness direction z. As shown in FIGS. 2 , 4 to 6 , 8 to 10 , and 13 , the first terminal 22 is exposed from the sealing resin 6 and has a portion protruding from the sealing resin 6 toward the y1 side in the second direction y, a portion folded back toward the z1 side in the thickness direction z, and a portion located on the z1 side in the thickness direction z. The first terminal 22 is used as a terminal when mounting the semiconductor device A1. The first terminal 22 is electrically connected to the first back electrode 111 of the first semiconductor element 11. The first terminal 22 is a drain terminal of the semiconductor device A1.

[0024] A plating layer made of an alloy containing Sn (tin) as a main component may be formed on the portion (first terminal portion 22) of the first lead 2 exposed from the sealing resin 6. In the illustrated example, a plating layer 203 is formed on the first terminal portion 22.

[0025] The second lead 3 is disposed on the x1 side in the first direction x with respect to the first lead 2. The second lead 3 includes a second pad portion 31 and a second terminal portion 32, as shown in FIGS.

[0026] The second pad portion 31 is located on the x1 side in the first direction x with respect to the first pad portion 21. The second pad portion 31 has a second main surface 301 and a second back surface 302. The second main surface 301 faces the z1 side in the thickness direction z. The second back surface 302 faces the z2 side in the thickness direction z. The second main surface 301 may be covered with, for example, a silver (Ag) plating layer. A first bonding wire 51 is connected to the second main surface 301 of the second pad portion 31.

[0027] The second terminal portion 32 is connected to the y2 side of the second pad portion 31 in the second direction y. The second terminal portion 32 extends in the second direction y when viewed in the thickness direction z. As shown in FIGS. 1 and 3 to 10 , the second terminal portion 32 is exposed from the sealing resin 6 and has a portion that protrudes from the sealing resin 6 to the y2 side in the second direction y, a portion that is folded back to the z1 side in the thickness direction z, and a portion that is located on the z1 side in the thickness direction z. The second terminal portion 32 is used as a terminal when mounting the semiconductor device A1.

[0028] A plating layer made of an alloy containing Sn (tin) as a main component may be formed on the portion (second terminal 32) of the second lead 3 that is exposed from the sealing resin 6. Although not shown in detail, the second terminal 32 has a plating layer formed thereon similar to the first terminal 22 described above.

[0029] The third lead 4 is disposed on the x2 side in the first direction x with respect to the first lead 2. As shown in FIGS. 1 to 7 and 9 to 13, the third lead 4 includes a third pad portion 41 and a third terminal portion 42.

[0030] The third pad portion 41 is located on the x2 side in the first direction x with respect to the first pad portion 21. The third pad portion 41 has a third main surface 401 and a third back surface 402. The third main surface 401 faces the z1 side in the thickness direction z. The second back surface 302 faces the z2 side in the thickness direction z. The second main surface 301 may be covered with, for example, a silver (Ag) plating layer. A first bonding wire 51 is connected to the second main surface 301 of the second pad portion 31.

[0031] The third terminal 42 is connected to the y2 side of the third pad 41 in the second direction y. The third terminal 42 extends in the second direction y when viewed in the thickness direction z. As shown in FIGS. 1 , 3 to 7 , 9 , 10 , and 13 , the third terminal 42 is exposed from the sealing resin 6 and has a portion that protrudes from the sealing resin 6 toward the y2 side in the second direction y, a portion that is folded back toward the z1 side in the thickness direction z, and a portion that is located on the z1 side in the thickness direction z. When viewed in the first direction x, the third terminal 42 has a shape and size that generally overlaps with the second terminal 32. The third terminal 42 is used as a terminal when mounting the semiconductor device A1.

[0032] A plating layer made of an alloy containing Sn (tin) as a main component may be formed on a portion (third terminal 42) of the third lead 4 that is exposed from the sealing resin 6. Although detailed illustration is omitted, a plating layer is formed on the third terminal 42 in the same manner as the first terminal 22 described above.

[0033] The first bonding wire 51 is bonded to the first principal surface electrode 112 of the first semiconductor element 11 and the second pad portion 31 of the second lead 3. The constituent material of the first bonding wire 51 is not limited in any way and includes metals such as Al (aluminum), Cu (copper), and Au (gold). The number of first bonding wires 51 is also not limited in any way, and multiple first bonding wires 51 may be provided. In the illustrated example, the first bonding wire 51 includes Au (gold). The second terminal portion 32 of the second lead 3 is electrically connected to the first principal surface electrode 112 of the first semiconductor element 11 via the first bonding wire 51. The second terminal portion 32 is a source terminal of the semiconductor device A1.

[0034] The second bonding wire 52 is bonded to the second principal surface electrode 113 of the first semiconductor element 11 and the third pad portion 41 of the third lead 4. The constituent material of the second bonding wire 52 is not limited in any way and includes metals such as Al (aluminum), Cu (copper), and Au (gold). In the illustrated example, the second bonding wire 52 includes Au (gold). The third terminal portion 42 of the third lead 4 is electrically connected to the second principal surface electrode 113 of the first semiconductor element 11 via the second bonding wire 52. The third terminal portion 42 is a gate terminal of the semiconductor device A1.

[0035] As shown in FIGS. 1 to 14 , the sealing resin 6 covers the first semiconductor element 11, the first bonding wire 51, the second bonding wire 52, and portions of the first lead 2, the second lead 3, and the third lead 4. More specifically, the sealing resin 6 covers the first pad portion 21, the second pad portion 31, and the third pad portion 41 of the first lead 2, the second lead 3, and the third lead 4. The sealing resin 6 has electrical insulation properties. The sealing resin 6 is made of a material containing, for example, black epoxy resin. The shape of the sealing resin 6 is not limited in any way. As shown in FIGS. 1 to 14 , the sealing resin 6 of this embodiment has a resin main surface 61, a resin back surface 62, a first resin side surface 63, a second resin side surface 64, a third resin side surface 65, and a fourth resin side surface 66.

[0036] The resin main surface 61 is a surface facing the z1 side in the thickness direction z. The resin back surface 62 is a surface facing the z2 side in the thickness direction z. In the illustrated example, the resin main surface 61 and the resin back surface 62 are flat surfaces, but are not limited to this and may be curved or bent surfaces, for example.

[0037] The first resin side surface 63 faces the x1 side in the first direction x. The second resin side surface 64 faces the x2 side in the first direction x. In the illustrated example, the first resin side surface 63 and the second resin side surface 64 are slightly curved surfaces, but are not limited to this and may be curved surfaces or flat surfaces, for example.

[0038] The third resin side surface 65 is a surface facing the y1 side in the second direction y. The fourth resin side surface 66 is a surface facing the y2 side in the second direction y. In the illustrated example, the third resin side surface 65 and the fourth resin side surface 66 are slightly curved surfaces, but this is not limited thereto and may be, for example, a curved surface or a flat surface. In this embodiment, the first terminal portion 22 protrudes from the third resin side surface 65, and the second terminal portion 32 and the third terminal portion 42 protrude from the fourth resin side surface 66.

[0039] 1, 2, 8, and 14, in this embodiment, a resin injection mark 631 is formed on the first resin side surface 63. The resin injection mark 631 has a rougher surface than other areas of the first resin side surface 63 excluding the resin injection mark 631. The resin injection mark 631 appears when the sealing resin 6 is cut at a resin injection gate in the process of forming the sealing resin 6 during the manufacture of the semiconductor device A1. The sealing resin 6 is cut by, for example, laser cutting. The resin injection mark 631 has a shape corresponding to the resin injection gate.

[0040] When forming the sealing resin 6, fluidized resin injected from a resin injection gate flows into the cavity of the mold from the x1 side in the first direction x toward the x2 side in the first direction x, filling the cavity. In this embodiment, multiple semiconductor devices A1 are manufactured at once. Here, the first semiconductor element 11 and lead material that constitute the semiconductor device A1 are placed in each of the multiple cavities, and the fluidized resin is sequentially poured into each of the multiple cavities.

[0041] In the semiconductor device A1, the resin injection mark 631 is located near the center of the first resin side surface 63 in the thickness direction z and is elongated with the second direction y as its longitudinal direction. The illustrated resin injection mark 631 is formed over the entire length of the first resin side surface 63 in the second direction y. The ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is, for example, 20% to 50%, and preferably 25% to 42%. For example, the length L1 of the sealing resin 6 in the thickness direction z is approximately 0.6 mm to 0.8 mm, and the length L2 of the resin injection mark 631 in the thickness direction z is approximately 0.2 mm to 0.25 mm.

[0042] In the illustrated example, the resin injection mark 631 has a first region 632 and a second region 633. As shown in FIG. 14 , the first region 632 is located on the z1 side of the first pad 21 in the thickness direction z as viewed in the first direction x, and does not overlap with the first pad 21. An edge 632a of the first region 632 on the z2 side in the thickness direction z as viewed in the first direction x overlaps with the first main surface 201 of the first pad 21. In the illustrated example, the first region 632 overlaps with the entire first semiconductor element 11 as viewed in the first direction x. A length L3 of the first region 632 in the thickness direction z is greater than a length L5 of the first semiconductor element 11 in the thickness direction z.

[0043] The second region 633 is connected to the first region 632 on the z2 side in the thickness direction z. The second region 633 overlaps with the first pad portion 21 when viewed in the first direction x. More specifically, the second region 633 overlaps with a portion of the first pad portion 21 when viewed in the first direction x. An edge 633a of the second region 633 on the z2 side in the thickness direction z is located on the z1 side in the thickness direction z with respect to the first rear surface 202 of the first pad portion 21. A length L3 of the first region 632 in the thickness direction z is greater than a length L4 of the second region 633 in the thickness direction z.

[0044] To give an example of the dimensions of each part, the length L3 in the thickness direction z of the first region 632 is approximately 0.2 mm. The length L4 in the thickness direction z of the second region 633 is approximately 0.05 mm. Furthermore, the length L5 in the thickness direction z of the first semiconductor element 11 is approximately 0.15 mm.

[0045] Next, the operation of the semiconductor device A1 will be described.

[0046] In this embodiment, a resin injection mark 631 having a rougher surface than other regions of the first resin side surface 63 is formed on the first resin side surface 63 of the sealing resin 6. The ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is 20% or more and 50% or less. Thus, in this embodiment, the ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is relatively large. According to the inventors' research, when the length L2 of the resin injection mark 631 (corresponding to the resin injection gate) in the thickness direction z is relatively large, defects such as wire sweep are reduced in downstream cavities far from the resin supply side when the fluidized resin sequentially flows into each of the multiple cavities during the formation of the sealing resin 6. One mechanism for this is that increasing the length L2 of the resin injection gate in the thickness direction z increases the flow rate of the resin in the first direction x within the cavity, thereby uniforming the viscosity and temperature of the resin filled into each of the multiple cavities. Therefore, according to the semiconductor device A1, the fluidity of the resin when forming the sealing resin 6 is improved, and problems such as wire sweep can be reduced.

[0047] The resin injection mark 631 is elongated with the second direction y as its longitudinal direction. The resin injection mark 631 is formed over the entire length of the first resin side surface 63 in the second direction y. With this configuration, the opening area of ​​the resin injection gate corresponding to the resin injection mark 631 can be efficiently increased. This increases the flow rate of the resin in the first direction x within the cavity when the sealing resin 6 is formed. This improves the fluidity of the resin when the sealing resin 6 is formed.

[0048] The resin injection mark 631 has a first region 632. When viewed in the first direction x, the first region 632 is located on the z1 side of the first pad portion 21 in the thickness direction z, and does not overlap with the first pad portion 21. This configuration can prevent the flow of resin flowing in from the resin injection gate from being hindered by collision with the first pad portion 21. This is preferable in terms of improving the fluidity of the resin when the sealing resin 6 is formed.

[0049] The resin injection mark 631 has a second region 633. The second region 633 is connected to the first region 632 on the z2 side in the thickness direction z and overlaps with the first pad portion 21 when viewed in the first direction x. The length L4 of the second region 633 in the thickness direction z is smaller than the length L3 of the first region 632 in the thickness direction z. With this configuration, even when the length L2 of the resin injection mark 631 in the thickness direction z is increased, the resin injection mark 631 can be positioned near the center of the first resin side surface 63 in the thickness direction z. This is preferable in terms of improving the fluidity of the resin when forming the sealing resin 6.

[0050] 15 to 29 show other embodiments and modifications of the present disclosure. In these figures, elements that are the same as or similar to those in the above-described embodiment are given the same reference numerals as in the above-described embodiment, and redundant explanations will be omitted. Furthermore, the configurations of the various parts in each embodiment and modification can be combined with each other as appropriate within the scope of not causing technical contradictions.

[0051] Second Embodiment: Figures 15 to 18 show a semiconductor device according to a second embodiment of the present disclosure. Figure 15 is a bottom view of a main part of a semiconductor device A2 according to this embodiment. Figure 16 is a cross-sectional view taken along line XVI-XVI in Figure 15. Figure 17 is a cross-sectional view taken along line XVII-XVII in Figure 15. Figure 18 is a side view illustrating traces of resin injection. In Figure 15, the outline of the sealing resin 6 is shown by an imaginary line (two-dot chain line).

[0052] The semiconductor device A2 of this embodiment includes a first semiconductor element 11, a second semiconductor element 12, a first lead 2, a second lead 3, a fourth lead 7, a first bonding wire 51, a third bonding wire 53, and a sealing resin 6.

[0053] The first semiconductor element 11 and the second semiconductor element 12 are elements that perform the electrical functions of the semiconductor device A2. There are no particular limitations on the types of the first semiconductor element 11 and the second semiconductor element 12. In this embodiment, the first semiconductor element 11 and the second semiconductor element 12 are diodes. In this embodiment, the first semiconductor element 11 and the second semiconductor element 12 each have a rectangular shape when viewed in the thickness direction z.

[0054] 15 and 16 , the first semiconductor element 11 has a first element body 110, a first back surface electrode 111, and a first main surface electrode 112. The first back surface electrode 111 is disposed on the z2 side in the thickness direction z of the first element body 110. The first main surface electrode 112 is disposed on the z1 side in the thickness direction z of the first element body 110. For example, the first back surface electrode 111 is a cathode electrode, and the first main surface electrode 112 is an anode electrode.

[0055] 15 and 17 , the second semiconductor element 12 has a second element body 120, a second back surface electrode 121, and a third principal surface electrode 122. The second back surface electrode 121 is disposed on the z2 side in the thickness direction z of the second element body 120. The third principal surface electrode 122 is disposed on the z1 side in the thickness direction z of the second element body 120. For example, the second back surface electrode 121 is a cathode electrode, and the third principal surface electrode 122 is an anode electrode.

[0056] 15 and 16 , the first semiconductor element 11 is bonded to the first main surface 201 of the first pad portion 21 via a conductive bonding layer 19. The first back surface electrode 111 of the first semiconductor element 11 faces the first main surface 201. The first back surface electrode 111 and the first main surface 201 are conductively bonded to each other via the conductive bonding layer 19. The first semiconductor element 11 is mounted on the first main surface 201 of the first pad portion 21 by die bonding. In the example shown in the present embodiment, the first semiconductor element 11 is disposed on the first pad portion 21 so as to be biased toward the y2 side in the second direction y. In the present embodiment, a third bonding wire 53 is connected to the first main surface 201 of the first pad portion 21.

[0057] The fourth lead 7 is disposed on the x2 side in the first direction x with respect to the first lead 2. The fourth lead 7 includes a fourth pad portion 71 and a fourth terminal portion 72, as shown in FIGS.

[0058] The fourth pad portion 71 is located on the x2 side in the first direction x with respect to the first pad portion 21. The fourth pad portion 71 has a fourth main surface 701 and a fourth back surface 702. The fourth main surface 701 faces the z1 side in the thickness direction z. The fourth back surface 702 faces the z2 side in the thickness direction z. The fourth main surface 701 may be covered with, for example, a silver (Ag) plating layer.

[0059] The fourth terminal portion 72 is connected to the y2 side of the fourth pad portion 71 in the second direction y. The fourth terminal portion 72 extends in the second direction y when viewed in the thickness direction z. As shown in FIG. 15 , the fourth terminal portion 72 is exposed from the sealing resin 6 and has a portion that protrudes from the sealing resin 6 toward the y2 side in the second direction y, a portion that is folded back toward the z1 side in the thickness direction z, and a portion that is located on the z1 side in the thickness direction z. When viewed in the first direction x, the fourth terminal portion 72 has a shape and size that generally overlaps with the second terminal portion 32. The fourth terminal portion 72 is used as a terminal when mounting the semiconductor device A2.

[0060] 15 and 17 , the second semiconductor element 12 is bonded to the fourth main surface 701 of the fourth pad portion 71 via a conductive bonding layer 19. The second back surface electrode 121 of the second semiconductor element 12 faces the third main surface 401. The second back surface electrode 121 and the fourth main surface 701 are conductively bonded to each other via the conductive bonding layer 19. The second semiconductor element 12 is mounted on the fourth main surface 701 of the fourth pad portion 71 by die bonding. In the example shown in the present embodiment, the second semiconductor element 12 is disposed on the fourth pad portion 71, offset toward the y1 side in the second direction y. The second semiconductor element 12 is disposed on the opposite side to the first semiconductor element 11 in the second direction y.

[0061] The second semiconductor element 12 overlaps a portion of the first semiconductor element 11 when viewed in the first direction x. In the illustrated example, the first semiconductor element 11 and the second semiconductor element 12 have the same size. As described above, the second semiconductor element 12 is disposed offset to the opposite side of the first semiconductor element 11 in the second direction y. As a result, although the second semiconductor element 12 overlaps a small portion of the first semiconductor element 11 when viewed in the first direction x, the majority of the second semiconductor element 12 does not overlap the first semiconductor element 11 when viewed in the first direction x.

[0062] The first bonding wire 51 is bonded to the first main surface electrode 112 of the first semiconductor element 11 and the second pad portion 31 of the second lead 3. The constituent material of the first bonding wire 51 is not limited in any way and includes metals such as Al (aluminum), Cu (copper), and Au (gold). The number of first bonding wires 51 is also not limited in any way and multiple first bonding wires 51 may be provided. In the illustrated example, the first bonding wire 51 includes Au (gold). The second terminal portion 32 of the second lead 3 is electrically connected to the first main surface electrode 112 of the first semiconductor element 11 via the first bonding wire 51.

[0063] The third bonding wire 53 is bonded to the third principal surface electrode 122 of the second semiconductor element 12 and the first pad portion 21 of the first lead 2. The constituent material of the third bonding wire 53 is not limited in any way and includes metals such as Al (aluminum), Cu (copper), and Au (gold). The number of first bonding wires 51 is also not limited in any way and multiple first bonding wires 51 may be provided. In the illustrated example, the third bonding wire 53 includes Au (gold). The first terminal portion 22 of the first lead 2 is electrically connected to the third principal surface electrode 122 of the second semiconductor element 12 via the third bonding wire 53.

[0064] The sealing resin 6 covers the first semiconductor element 11, the second semiconductor element 12, the first bonding wire 51, the third bonding wire 53, and portions of the first lead 2, the second lead 3, and the fourth lead 7. More specifically, the sealing resin 6 covers the first pad 21, the second pad 31, and the fourth pad 71 of the first lead 2, the second lead 3, and the fourth lead 7. Similar to the semiconductor device A1 of the above embodiment, the sealing resin 6 has a resin main surface 61, a resin back surface 62, a first resin side surface 63, a second resin side surface 64, a third resin side surface 65, and a fourth resin side surface 66. Furthermore, as shown in FIG. 18 , a resin injection mark 631 is formed on the first resin side surface 63. The resin injection mark 631 has a rougher surface than the other regions of the first resin side surface 63 excluding the resin injection mark 631.

[0065] In the semiconductor device A2, the resin injection mark 631 is located near the center of the first resin side surface 63 in the thickness direction z and is elongated with the second direction y as its longitudinal direction. The illustrated resin injection mark 631 is formed over the entire length of the first resin side surface 63 in the second direction y. The ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is, for example, 20% to 50%, and preferably 20% to 31%. For example, the length L1 of the sealing resin 6 in the thickness direction z is approximately 0.8 mm to 1.0 mm, and the length L2 of the resin injection mark 631 in the thickness direction z is approximately 0.2 mm to 0.25 mm.

[0066] In the illustrated example, the resin injection mark 631 has a first region 632. As shown in FIG. 18 , the first region 632 is located on the z1 side of the first pad 21 in the thickness direction z as viewed in the first direction x, and does not overlap with the first pad 21. An edge 632a of the first region 632 on the z2 side in the thickness direction z as viewed in the first direction x overlaps with the first main surface 201 of the first pad 21. In the illustrated example, the first region 632 overlaps with the entire first semiconductor element 11 as viewed in the first direction x. A length L3 of the first region 632 in the thickness direction z is greater than a length L5 of the first semiconductor element 11 in the thickness direction z.

[0067] To give an example of the dimensions of each part, the length L3 of the first region 632 in the thickness direction z is about 0.25 mm, and the length L5 of the first semiconductor element 11 in the thickness direction z is about 0.15 mm.

[0068] Next, the operation of the semiconductor device A2 will be described.

[0069] In this embodiment, a resin injection mark 631 having a rougher surface than other regions of the first resin side surface 63 is formed on the first resin side surface 63 of the sealing resin 6. The ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is 20% or more and 50% or less. Thus, in this embodiment, the ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is relatively large. According to the inventors' research, when the length L2 of the resin injection mark 631 (corresponding to the resin injection gate) in the thickness direction z is relatively large, defects such as wire sweep are reduced in downstream cavities far from the resin supply side when the fluidized resin sequentially flows into each of the multiple cavities during the formation of the sealing resin 6. This is thought to be because increasing the length L2 of the resin injection gate in the thickness direction z increases the flow rate of the resin in the first direction x within the cavity, thereby achieving uniform viscosity and temperature of the resin filled into each of the multiple cavities. Therefore, according to the semiconductor device A2, the fluidity of the resin when forming the sealing resin 6 is improved, and problems such as wire sweep can be reduced.

[0070] The resin injection mark 631 is elongated with the second direction y as its longitudinal direction. The resin injection mark 631 is formed on the first resin side surface 63 over the entire length in the second direction y. With this configuration, the opening area of ​​the resin injection gate corresponding to the resin injection mark 631 can be efficiently increased. This increases the flow rate of the resin in the first direction x within the cavity when the sealing resin 6 is formed. This improves the fluidity of the resin when the sealing resin 6 is formed. In addition, the semiconductor device A2 achieves the same effects as the semiconductor device A1 within the same range of configuration as the semiconductor device A1 of the above embodiment.

[0071] 19 and 20 show a semiconductor device according to a modification of the second embodiment of the present disclosure. Fig. 19 is a bottom view of a main part of a semiconductor device A21 according to this modification. Fig. 20 is a side view for explaining traces of resin injection. In Fig. 19, the outline of the sealing resin 6 is shown by an imaginary line (two-dot chain line).

[0072] In the semiconductor device A21 of this modification, the arrangement of the first semiconductor element 11 is different from that of the semiconductor device A2. In this modification, the first semiconductor element 11 is arranged biased toward the y1 side in the second direction y in the first pad portion 21. Furthermore, the second semiconductor element 12 is arranged biased toward the y1 side in the second direction y in the fourth pad portion 71. The first semiconductor element 11 and the second semiconductor element 12 are arranged biased toward the same side in the second direction y.

[0073] The second semiconductor element 12 overlaps with the first semiconductor element 11 when viewed in the first direction x. In the illustrated example, the first semiconductor element 11 and the second semiconductor element 12 have the same size. Furthermore, the second semiconductor element 12 overlaps with the entire first semiconductor element 11 when viewed in the first direction x.

[0074] In the semiconductor device A21, the resin injection mark 631 is located near the center of the first resin side surface 63 in the thickness direction z and is elongated with the second direction y as its longitudinal direction. The illustrated resin injection mark 631 is formed over the entire length of the first resin side surface 63 in the second direction y. The ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is, for example, 20% or more and 31% or less. As an example of the dimensions of the sealing resin 6, the length L1 of the sealing resin 6 in the thickness direction z is approximately 0.8 mm or more and 1.0 mm or less, and the length L2 of the resin injection mark 631 in the thickness direction z is approximately 0.2 mm or more and 0.25 mm or less.

[0075] In the illustrated example, the resin injection mark 631 has a first region 632. As shown in FIG. 20 , the first region 632 is located on the z1 side of the first pad 21 in the thickness direction z as viewed in the first direction x, and does not overlap with the first pad 21. An edge 632a of the first region 632 on the z2 side in the thickness direction z as viewed in the first direction x overlaps with the first main surface 201 of the first pad 21. In the illustrated example, the first region 632 overlaps with the entire first semiconductor element 11 as viewed in the first direction x. A length L3 of the first region 632 in the thickness direction z is greater than a length L5 of the first semiconductor element 11 in the thickness direction z.

[0076] Next, the operation of the semiconductor device A21 will be described.

[0077] In this modification, a resin injection mark 631 having a rougher surface than other regions of the first resin side surface 63 is formed on the first resin side surface 63 of the sealing resin 6. The ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is 20% or more and 50% or less. Thus, in this modification, the ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is relatively large. According to the inventors' research, when the length L2 of the resin injection mark 631 (corresponding to the resin injection gate) in the thickness direction z is relatively large, defects such as wire sweep are reduced in downstream cavities far from the resin supply side when the fluidized resin sequentially flows into each of the multiple cavities during the formation of the sealing resin 6. This is thought to be because increasing the length L2 of the resin injection gate in the thickness direction z increases the flow rate of the resin in the first direction x within the cavity, thereby achieving uniform viscosity and temperature of the resin filled into each of the multiple cavities. Therefore, according to the semiconductor device A21, the fluidity of the resin when forming the sealing resin 6 is improved, and problems such as wire sweep can be reduced.

[0078] The resin injection mark 631 is elongated with the second direction y as its longitudinal direction. The resin injection mark 631 is formed on the first resin side surface 63 over the entire length in the second direction y. With this configuration, the opening area of ​​the resin injection gate corresponding to the resin injection mark 631 can be efficiently increased. This increases the flow rate of the resin in the first direction x within the cavity when the sealing resin 6 is formed. This improves the fluidity of the resin when the sealing resin 6 is formed. In addition, the semiconductor device A21 achieves the same effects as the semiconductor device A1 within the same range of configuration as the semiconductor device A1 of the above embodiment.

[0079] Third Embodiment: Figures 21 to 25 show a semiconductor device according to a third embodiment of the present disclosure. Figure 21 is a perspective view of a main portion of a semiconductor device A3 according to this embodiment. Figure 22 is a bottom view of a main portion of the semiconductor device A3. Figure 23 is a cross-sectional view taken along line XXIII-XXIII in Figure 22. Figure 24 is a cross-sectional view taken along line XXIV-XXIV in Figure 22. Figure 25 is a side view illustrating traces of resin injection. In Figures 21 and 22, the outline of the sealing resin 6 is indicated by an imaginary line (two-dot chain line).

[0080] The semiconductor device A3 of this embodiment includes a first semiconductor element 11, a third semiconductor element 13, a first lead 2, a fifth lead 81, a sixth lead 82, an eighth lead 84, a ninth lead 85, a first bonding wire 51, a fourth bonding wire 54, a fifth bonding wire 55, a sixth bonding wire 56, and a sealing resin 6.

[0081] The first semiconductor element 11 and the third semiconductor element 13 are elements that perform the electrical functions of the semiconductor device A3. In this embodiment, the first semiconductor element 11 is a three-terminal element having three electrodes, such as a MOSFET. Alternatively, the first semiconductor element 11 and the third semiconductor element 13 may be switching elements such as IGBTs or diodes. In the description of the semiconductor device A3, the first semiconductor element 11 and the third semiconductor element 13 are n-channel MOSFETs with a vertical structure. The first semiconductor element 11 and the third semiconductor element 13 are each rectangular when viewed in the thickness direction z.

[0082] 21 to 23 , the first semiconductor element 11 has a first element body 110, a first back surface electrode 111, a fourth principal surface electrode 114, and a fifth principal surface electrode 115. The first back surface electrode 111 is disposed on the z2 side of the first element body 110 in the thickness direction z. A current corresponding to the power before conversion by the first semiconductor element 11 flows through the first back surface electrode 111. In other words, the first back surface electrode 111 corresponds to the drain electrode of the first semiconductor element 11.

[0083] The fourth principal surface electrode 114 is disposed on the z1 side in the thickness direction z of the first element body 110. A gate voltage for driving the first semiconductor element 11 is applied to the fourth principal surface electrode 114. In other words, the fourth principal surface electrode 114 corresponds to the gate electrode of the first semiconductor element 11.

[0084] The fifth principal surface electrode 115 is disposed on the z1 side in the thickness direction z of the first element body 110. A current corresponding to the power converted by the first semiconductor element 11 flows through the fifth principal surface electrode 115. In other words, the fifth principal surface electrode 115 corresponds to the source electrode of the first semiconductor element 11. When viewed in the thickness direction z, the area of ​​the fourth principal surface electrode 114 is smaller than the area of ​​the fifth principal surface electrode 115.

[0085] 21 , 22 , and 24 , the third semiconductor element 13 has a third element body 130, a third back surface electrode 131, a sixth principal surface electrode 132, and a seventh principal surface electrode 133. The third back surface electrode 131 is disposed on the z2 side of the third element body 130 in the thickness direction z. A current corresponding to the power before being converted by the third semiconductor element 13 flows through the third back surface electrode 131. In other words, the third back surface electrode 131 corresponds to the drain electrode of the third semiconductor element 13.

[0086] The fourth principal surface electrode 114 is disposed on the z1 side in the thickness direction z of the first element body 110. A gate voltage for driving the first semiconductor element 11 is applied to the fourth principal surface electrode 114. In other words, the fourth principal surface electrode 114 corresponds to the gate electrode of the first semiconductor element 11.

[0087] The fifth principal surface electrode 115 is disposed on the z1 side in the thickness direction z of the first element body 110. A current corresponding to the power converted by the first semiconductor element 11 flows through the fifth principal surface electrode 115. In other words, the fifth principal surface electrode 115 corresponds to the source electrode of the first semiconductor element 11. When viewed in the thickness direction z, the area of ​​the fourth principal surface electrode 114 is smaller than the area of ​​the fifth principal surface electrode 115.

[0088] 21 to 23 , the first semiconductor element 11 is bonded to the first main surface 201 of the first pad portion 21 via a conductive bonding layer 19. The first back surface electrode 111 of the first semiconductor element 11 faces the first main surface 201. The first back surface electrode 111 and the first main surface 201 are conductively bonded via the conductive bonding layer 19. The first semiconductor element 11 is mounted on the first main surface 201 of the first pad portion 21 by die bonding. The first terminal portion 22 is electrically connected to the first back surface electrode 111 of the first semiconductor element 11. The first terminal portion 22 is a drain terminal of the semiconductor device A3 (first semiconductor element 11).

[0089] The fifth lead 81 is disposed on the x2 side in the first direction x with respect to the first lead 2. The fifth lead 81 includes a fifth pad portion 811 and a fifth terminal portion 812, as shown in FIGS.

[0090] The fifth pad portion 811 is located on the x2 side in the first direction x with respect to the first pad portion 21. A surface of the fifth pad portion 811 facing the z1 side in the thickness direction z may be covered with, for example, a silver (Ag) plating layer. In this embodiment, the first bonding wire 51 and the fourth bonding wire 54 are connected to the surface of the fifth pad portion 811 facing the z1 side in the thickness direction z.

[0091] The fifth terminal portion 812 is connected to the y2 side in the second direction y with respect to the fifth pad portion 811. The fifth terminal portion 812 extends in the second direction y when viewed in the thickness direction z. As shown in FIGS. 21 and 22 , the fifth terminal portion 812 is exposed from the sealing resin 6 and has a portion that protrudes from the sealing resin 6 to the y2 side in the second direction y, a portion that is folded back to the z1 side in the thickness direction z, and a portion that is located on the z1 side in the thickness direction z. The fifth terminal portion 812 is used as a terminal when mounting the semiconductor device A3.

[0092] The sixth lead 82 is disposed on the x2 side in the first direction x with respect to the fifth lead 81. The sixth lead 82 includes a sixth pad portion 821 and a sixth terminal portion 822, as shown in FIGS.

[0093] The sixth pad portion 821 is located on the x2 side in the first direction x with respect to the fifth pad portion 811. A surface of the sixth pad portion 821 facing the z1 side in the thickness direction z may be covered with, for example, a silver (Ag) plating layer.

[0094] The sixth terminal portion 822 is connected to the y1 side of the sixth pad portion 821 in the second direction y. The sixth terminal portion 822 extends in the second direction y when viewed in the thickness direction z. As shown in FIGS. 21 and 22 , the sixth terminal portion 822 is exposed from the sealing resin 6 and has a portion that protrudes from the sealing resin 6 toward the y1 side in the second direction y, a portion that is folded back toward the z1 side in the thickness direction z, and a portion that is located on the z1 side in the thickness direction z. When viewed in the first direction x, the sixth terminal portion 822 has a shape and size that generally overlaps with the first terminal portion 22. The sixth terminal portion 822 is used as a terminal when mounting the semiconductor device A3.

[0095] 21 , 22 , and 24 , the third semiconductor element 13 is bonded to a surface of the sixth pad portion 821 facing the z1 side in the thickness direction z via a conductive bonding layer 19. The third back surface electrode 131 of the third semiconductor element 13 faces the sixth pad portion 821. The third back surface electrode 131 and the sixth pad portion 821 are conductively bonded via the conductive bonding layer 19. The third semiconductor element 13 is mounted on the sixth pad portion 821 by die bonding. The sixth terminal portion 822 is electrically connected to the third back surface electrode 131 of the third semiconductor element 13. The sixth terminal portion 822 is a drain terminal of the semiconductor device A3 (third semiconductor element 13).

[0096] The eighth lead 84 is disposed on the y2 side in the second direction y with respect to the first lead 2. The eighth lead 84 includes an eighth pad portion 841 and an eighth terminal portion 842, as shown in FIGS.

[0097] The eighth pad portion 841 is located on the y2 side in the second direction y with respect to the first pad portion 21. The eighth pad portion 841 is located on the x1 side in the first direction x with respect to the fifth pad portion 811. A surface of the eighth pad portion 841 facing the z1 side in the thickness direction z may be covered with, for example, a silver (Ag) plating layer. In this embodiment, a fifth bonding wire 55 is connected to the surface of the eighth pad portion 841 facing the z1 side in the thickness direction z.

[0098] The eighth terminal portion 842 is connected to the y2 side in the second direction y with respect to the eighth pad portion 841. The eighth terminal portion 842 extends in the second direction y when viewed in the thickness direction z. As shown in FIGS. 21 , 22 , and 25 , the eighth terminal portion 842 is exposed from the sealing resin 6 and has a portion that protrudes from the sealing resin 6 to the y2 side in the second direction y, a portion that is folded back to the z1 side in the thickness direction z, and a portion that is located on the z1 side in the thickness direction z. The eighth terminal portion 842 is used as a terminal when mounting the semiconductor device A3.

[0099] The ninth lead 85 is arranged on the x2 side in the first direction x with respect to the fifth lead 81. The ninth lead 85 is also arranged on the y2 side in the second direction y with respect to the sixth lead 82. As shown in FIGS. 21 and 22 , the ninth lead 85 includes a ninth pad portion 851 and a ninth terminal portion 852.

[0100] The ninth pad portion 851 is located on the x2 side in the first direction x with respect to the fifth pad portion 811. The ninth pad portion 851 is located on the y2 side in the second direction y with respect to the sixth pad portion 821. A surface of the ninth pad portion 851 facing the z1 side in the thickness direction z may be covered with, for example, a silver (Ag) plating layer. In this embodiment, a sixth bonding wire 56 is connected to the surface of the ninth pad portion 851 facing the z1 side in the thickness direction z.

[0101] The ninth terminal portion 852 is connected to the y2 side of the ninth pad portion 851 in the second direction y. The ninth terminal portion 852 extends in the second direction y when viewed in the thickness direction z. As shown in FIGS. 21 and 22 , the ninth terminal portion 852 is exposed from the sealing resin 6 and has a portion that protrudes from the sealing resin 6 toward the y2 side in the second direction y, a portion that is folded back toward the z1 side in the thickness direction z, and a portion that is located on the z1 side in the thickness direction z. When viewed in the first direction x, the ninth terminal portion 852 and the fifth terminal portion 812 have shapes and sizes that generally overlap the eighth terminal portion 842. The ninth terminal portion 852 is used as a terminal when mounting the semiconductor device A3.

[0102] The first bonding wire 51 is bonded to the fourth principal surface electrode 114 of the first semiconductor element 11 and a fifth pad portion 811 of the fifth lead 81. The constituent material of the first bonding wire 51 is not limited in any way and includes metals such as Al (aluminum), Cu (copper), and Au (gold). In the illustrated example, the first bonding wire 51 includes Au (gold). A fifth terminal portion 812 of the fifth lead 81 is electrically connected to the fourth principal surface electrode 114 of the first semiconductor element 11 via the first bonding wire 51. The fifth terminal portion 812 is a gate terminal of the semiconductor device A3 (first semiconductor element 11).

[0103] The fourth bonding wire 54 is bonded to the sixth principal surface electrode 132 of the third semiconductor element 13 and the fifth pad portion 811 of the fifth lead 81. The constituent material of the fourth bonding wire 54 is not limited in any way and includes metals such as Al (aluminum), Cu (copper), and Au (gold). In the illustrated example, the fourth bonding wire 54 includes Au (gold). The fifth terminal portion 812 of the fifth lead 81 is electrically connected to the sixth principal surface electrode 132 of the third semiconductor element 13 via the fourth bonding wire 54. The fifth terminal portion 812 is a gate terminal of the semiconductor device A3 (third semiconductor element 13).

[0104] The fifth bonding wire 55 is bonded to the fifth principal surface electrode 115 of the first semiconductor element 11 and an eighth pad portion 841 of the eighth lead 84. The constituent material of the fifth bonding wire 55 is not limited in any way and includes metals such as Al (aluminum), Cu (copper), and Au (gold). In the illustrated example, the fifth bonding wire 55 includes Au (gold). The eighth terminal portion 842 of the eighth lead 84 is electrically connected to the fifth principal surface electrode 115 of the first semiconductor element 11 via the fifth bonding wire 55. The eighth terminal portion 842 is a source terminal of the semiconductor device A3 (first semiconductor element 11).

[0105] The sixth bonding wire 56 is bonded to the seventh principal surface electrode 133 of the third semiconductor element 13 and a ninth pad portion 851 of the ninth lead 85. The constituent material of the sixth bonding wire 56 is not limited in any way and includes metals such as Al (aluminum), Cu (copper), and Au (gold). In the illustrated example, the sixth bonding wire 56 includes Au (gold). The ninth terminal portion 852 of the ninth lead 85 is electrically connected to the seventh principal surface electrode 133 of the third semiconductor element 13 via the sixth bonding wire 56. The ninth terminal portion 852 is a source terminal of the semiconductor device A3 (third semiconductor element 13).

[0106] The sealing resin 6 covers the first semiconductor element 11, the third semiconductor element 13, the first bonding wire 51, the fourth bonding wire 54, the fifth bonding wire 55, the sixth bonding wire 56, and parts of the first lead 2, the fifth lead 81, the sixth lead 82, the eighth lead 84, and the ninth lead 85. More specifically, the sealing resin 6 covers the first pad portion 21, the fifth pad portion 811, the sixth pad portion 821, the eighth pad portion 841, and the ninth pad portion 851 of the first lead 2, the fifth lead 81, the sixth lead 82, the eighth lead 84, and the ninth lead 85. The sealing resin 6 has a resin main surface 61, a resin back surface 62, a first resin side surface 63, a second resin side surface 64, a third resin side surface 65, and a fourth resin side surface 66, similar to the semiconductor device A1 of the above embodiment. 25, a resin injection mark 631 is formed on the first resin side surface 63. The surface of the resin injection mark 631 is rougher than the other regions of the first resin side surface 63 excluding the resin injection mark 631.

[0107] In the semiconductor device A3, the resin injection mark 631 is located near the center of the first resin side surface 63 in the thickness direction z and is elongated with the second direction y as its longitudinal direction. The illustrated resin injection mark 631 is formed over the entire length of the first resin side surface 63 in the second direction y. The ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is, for example, 20% to 50%, and preferably 20% to 31%. For example, the length L1 of the sealing resin 6 in the thickness direction z is approximately 0.8 mm to 1.0 mm, and the length L2 of the resin injection mark 631 in the thickness direction z is approximately 0.2 mm to 0.25 mm.

[0108] In the illustrated example, the resin injection mark 631 has a first region 632. As shown in FIG. 25 , the first region 632 is located on the z1 side of the first pad 21 in the thickness direction z as viewed in the first direction x, and does not overlap with the first pad 21. An edge 632a of the first region 632 on the z2 side in the thickness direction z as viewed in the first direction x overlaps with the first main surface 201 of the first pad 21. In the illustrated example, the first region 632 overlaps with the entire first semiconductor element 11 as viewed in the first direction x. The length L3 of the first region 632 in the thickness direction z is greater than the length L5 of the first semiconductor element 11 in the thickness direction z. As an example of dimensions, the length L5 of the first semiconductor element 11 in the thickness direction z is approximately 0.15 mm. In this embodiment, unlike the semiconductor devices A1 and A2 of the above embodiments, the resin injection marks 631 do not have the second regions 633, and the entire resin injection marks 631 correspond to the first regions 632.

[0109] Next, the operation of the semiconductor device A3 will be described.

[0110] In this embodiment, a resin injection mark 631 having a rougher surface than other regions of the first resin side surface 63 is formed on the first resin side surface 63 of the sealing resin 6. The ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is 20% or more and 50% or less. Thus, in this embodiment, the ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is relatively large. According to the inventors' research, when the length L2 of the resin injection mark 631 (corresponding to the resin injection gate) in the thickness direction z is relatively large, defects such as wire sweep are reduced in downstream cavities far from the resin supply side when the fluidized resin sequentially flows into each of the multiple cavities during the formation of the sealing resin 6. This is thought to be because increasing the length L2 of the resin injection gate in the thickness direction z increases the flow rate of the resin in the first direction x within the cavity, thereby achieving uniform viscosity and temperature of the resin filled into each of the multiple cavities. Therefore, according to the semiconductor device A3, the fluidity of the resin when forming the sealing resin 6 is improved, and problems such as wire sweep can be reduced.

[0111] The resin injection mark 631 is elongated with the second direction y as its longitudinal direction. The resin injection mark 631 is formed on the first resin side surface 63 over the entire length in the second direction y. With this configuration, the opening area of ​​the resin injection gate corresponding to the resin injection mark 631 can be efficiently increased. This increases the flow rate of the resin in the first direction x within the cavity when the sealing resin 6 is formed. This improves the fluidity of the resin when the sealing resin 6 is formed. In addition, the semiconductor device A3 achieves the same effects as the semiconductor device A1 within the same range of configuration as the semiconductor device A1 of the above embodiment.

[0112] Fourth Embodiment: Figures 26 to 29 show a semiconductor device according to a fourth embodiment of the present disclosure. Figure 26 is a bottom view of a main portion of a semiconductor device A4 according to this embodiment. Figure 27 is a cross-sectional view taken along line XXVII-XXVII in Figure 26. Figure 28 is a cross-sectional view taken along line XXVIII-XXVIII in Figure 26. Figure 29 is a side view illustrating traces of resin injection. In Figure 26, the outline of the sealing resin 6 is indicated by an imaginary line (two-dot chain line).

[0113] The semiconductor device A4 of this embodiment includes a first semiconductor element 11, a third semiconductor element 13, a first lead 2, a fifth lead 81, a sixth lead 82, a seventh lead 83, an eighth lead 84, a ninth lead 85, a first bonding wire 51, a fourth bonding wire 54, a fifth bonding wire 55, a sixth bonding wire 56, and a sealing resin 6. Compared to the semiconductor device A3 described above, the semiconductor device A4 additionally includes a seventh lead 83, and the sixth lead 82 and the ninth lead 85 are arranged differently.

[0114] The seventh lead 83 is disposed on the x2 side in the first direction x with respect to the first lead 2. The seventh lead 83 includes a seventh pad portion 831 and a seventh terminal portion 832, as shown in FIGS.

[0115] The seventh pad portion 831 is located on the x2 side in the first direction x with respect to the first pad portion 21. The seventh pad portion 831 is located on the y1 side in the second direction y with respect to the fifth pad portion 811. The surface of the seventh pad portion 831 facing the z1 side in the thickness direction z may be covered with, for example, a silver (Ag) plating layer. In this embodiment, the fourth bonding wire 54 is connected to the surface of the seventh pad portion 831 facing the z1 side in the thickness direction z.

[0116] The seventh terminal portion 832 is connected to the y1 side of the seventh pad portion 831 in the second direction y. The seventh terminal portion 832 extends in the second direction y when viewed in the thickness direction z. As shown in FIG. 26 , the seventh terminal portion 832 is exposed from the sealing resin 6 and has a portion that protrudes from the sealing resin 6 to the y1 side in the second direction y, a portion that is folded back to the z1 side in the thickness direction z, and a portion that is located on the z1 side in the thickness direction z. When viewed in the first direction x, the seventh terminal portion 832 has a shape and size that roughly overlaps with the first terminal portion 22. The seventh terminal portion 832 is used as a terminal when mounting the semiconductor device A4.

[0117] The arrangements of the sixth lead 82 and the ninth lead 85 are swapped in the second direction y compared to the semiconductor device A3. The sixth lead 82 is arranged on the x2 side in the first direction x with respect to the fifth lead 81. The sixth pad portion 821 is located on the x2 side in the first direction x with respect to the fifth pad portion 811. The sixth terminal portion 822 is connected to the y2 side in the second direction y with respect to the sixth pad portion 821. The ninth lead 85 is arranged on the x2 side in the first direction x with respect to the seventh lead 83. The ninth pad portion 851 is located on the x2 side in the first direction x with respect to the seventh pad portion 831. The ninth pad portion 851 is located on the y1 side in the second direction y with respect to the sixth pad portion 821. The ninth terminal portion 852 is connected to the y1 side in the second direction y with respect to the ninth pad portion 851.

[0118] Unlike the semiconductor device A3 described above, the fourth bonding wire 54 is joined to the sixth principal surface electrode 132 of the third semiconductor element 13 and a seventh pad portion 831 of the seventh lead 83. The seventh terminal portion 832 of the seventh lead 83 is electrically connected to the sixth principal surface electrode 132 of the third semiconductor element 13 via the fourth bonding wire 54. The seventh terminal portion 832 is a gate terminal of the semiconductor device A4 (third semiconductor element 13).

[0119] The sealing resin 6 covers the first semiconductor element 11, the third semiconductor element 13, the first bonding wire 51, the fourth bonding wire 54, the fifth bonding wire 55, the sixth bonding wire 56, and parts of the first lead 2, the fifth lead 81, the sixth lead 82, the seventh lead 83, the eighth lead 84, and the ninth lead 85. More specifically, the sealing resin 6 covers the first pad portion 21, the fifth pad portion 811, the sixth pad portion 821, the seventh pad portion 831, the eighth pad portion 841, and the ninth pad portion 851 of the first lead 2, the fifth lead 81, the sixth lead 82, the seventh lead 83, the eighth lead 84, and the ninth lead 85. The sealing resin 6 has a resin main surface 61, a resin back surface 62, a first resin side surface 63, a second resin side surface 64, a third resin side surface 65, and a fourth resin side surface 66, similar to the semiconductor device A1 of the above embodiment. 29, a resin injection mark 631 is formed on the first resin side surface 63. The surface of the resin injection mark 631 is rougher than the other regions of the first resin side surface 63 excluding the resin injection mark 631.

[0120] In the semiconductor device A4, the resin injection mark 631 is located near the center of the first resin side surface 63 in the thickness direction z and is elongated with the second direction y as its longitudinal direction. The illustrated resin injection mark 631 is formed over the entire length of the first resin side surface 63 in the second direction y. The ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is, for example, 20% to 50%, and preferably 20% to 31%. For example, the length L1 of the sealing resin 6 in the thickness direction z is approximately 0.8 mm to 1.0 mm, and the length L2 of the resin injection mark 631 in the thickness direction z is approximately 0.2 mm to 0.25 mm.

[0121] In the illustrated example, the resin injection mark 631 has a first region 632. As shown in FIG. 29 , the first region 632 is located on the z1 side of the first pad 21 in the thickness direction z as viewed in the first direction x, and does not overlap with the first pad 21. An edge 632a of the first region 632 on the z2 side in the thickness direction z as viewed in the first direction x overlaps with the first main surface 201 of the first pad 21. In the illustrated example, the first region 632 overlaps with the entire first semiconductor element 11 as viewed in the first direction x. The length L3 of the first region 632 in the thickness direction z is greater than the length L5 of the first semiconductor element 11 in the thickness direction z. As an example of dimensions, the length L5 of the first semiconductor element 11 in the thickness direction z is approximately 0.15 mm. In this embodiment, unlike the semiconductor devices A1 and A2 of the above embodiments, the resin injection marks 631 do not have the second regions 633, and the entire resin injection marks 631 correspond to the first regions 632.

[0122] Next, the operation of the semiconductor device A4 will be described.

[0123] In this embodiment, a resin injection mark 631 having a rougher surface than other regions of the first resin side surface 63 is formed on the first resin side surface 63 of the sealing resin 6. The ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is 20% or more and 50% or less. Thus, in this embodiment, the ratio of the length L2 of the resin injection mark 631 in the thickness direction z to the length L1 of the sealing resin 6 in the thickness direction z is relatively large. According to the inventors' research, when the length L2 of the resin injection mark 631 (corresponding to the resin injection gate) in the thickness direction z is relatively large, defects such as wire sweep are reduced in downstream cavities far from the resin supply side when the fluidized resin sequentially flows into each of the multiple cavities during the formation of the sealing resin 6. This is thought to be because increasing the length L2 of the resin injection gate in the thickness direction z increases the flow rate of the resin in the first direction x within the cavity, thereby achieving uniform viscosity and temperature of the resin filled into each of the multiple cavities. Therefore, according to the semiconductor device A4, the fluidity of the resin when forming the sealing resin 6 is improved, and problems such as wire sweep can be reduced.

[0124] The resin injection mark 631 is elongated with the second direction y as its longitudinal direction. The resin injection mark 631 is formed on the first resin side surface 63 over the entire length in the second direction y. With this configuration, the opening area of ​​the resin injection gate corresponding to the resin injection mark 631 can be efficiently increased. This increases the flow rate of the resin in the first direction x within the cavity when the sealing resin 6 is formed. This improves the fluidity of the resin when the sealing resin 6 is formed. In addition, the semiconductor device A4 achieves the same effects as the semiconductor device A1 within the same configuration range as the semiconductor device A1 of the above embodiment.

[0125] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0126] In the above-described embodiments, the resin injection marks 631 are formed over the entire length of the first resin side surface 63 in the second direction y, but the present disclosure is not limited to this. For example, the resin injection marks in the present disclosure may be formed in a region of the first resin side surface 63 excluding both end sides in the second direction.

[0127] The present disclosure includes configurations related to the following notes. Note 1. A semiconductor device comprising: a first lead having a first pad; a first semiconductor element arranged on one side of the first pad in a thickness direction; and a sealing resin covering the first semiconductor element and the first pad, wherein the sealing resin has a first resin side surface facing one side in a first direction perpendicular to the thickness direction, and a resin injection mark having a surface rougher than other regions of the first resin side surface is formed on the first resin side surface, and a ratio of the length of the resin injection mark in the thickness direction to the length of the sealing resin in the thickness direction is 20% or more and 50% or less. Note 2. The semiconductor device according to Note 1, wherein the resin injection mark is located on one side of the first pad in the thickness direction when viewed in the first direction and has a first region that does not overlap with the first pad. Note 3. The semiconductor device according to Note 2, wherein the resin injection mark is elongated with its longitudinal direction extending in a second direction perpendicular to the thickness direction and the first direction. Note 4. The semiconductor device according to Supplementary Note 3, wherein the first pad portion has a first main surface facing one side in the thickness direction and a first back surface facing the other side in the thickness direction, and an edge of the first region on the other side in the thickness direction overlaps the first main surface when viewed in the first direction.Supplementary Note 5. The semiconductor device according to Supplementary Note 4, wherein the resin injection mark has a second region that is connected to the other side in the thickness direction with respect to the first region and overlaps with the first pad portion when viewed in the first direction.Supplementary Note 6. The semiconductor device according to Supplementary Note 5, wherein, when viewed in the first direction, an edge of the second region on the other side in the thickness direction is located on one side in the thickness direction with respect to the first back surface.Supplementary Note 7. The semiconductor device according to Supplementary Note 5 or 6, wherein the length in the thickness direction of the first region is greater than the length in the thickness direction of the second region.Supplementary Note 8. The semiconductor device according to any of Supplements 4 to 7, wherein the length in the thickness direction of the first region is greater than the length in the thickness direction of the first semiconductor element.Supplementary Note 9. 9. The semiconductor device according to claim 3, wherein the resin injection mark is formed on the first resin side surface over the entire length in the second direction.Appendix 10. The semiconductor device according to any one of Appendixes 1 to 9, wherein the first lead has a first terminal portion connected to one side of the first pad portion in the thickness direction and a second direction orthogonal to the first direction and at least a portion of which is exposed from the sealing resin, and further comprises a first bonding wire bonded to the first semiconductor element. Appendix 11. The semiconductor device according to Appendix 10, further comprising a second lead arranged spaced apart from the first lead, the second lead having a second pad portion located on one side of the first pad portion in the first direction, the first semiconductor element having a first element body, a first back surface electrode arranged on the other side of the first element body in the thickness direction, and a first main surface electrode arranged on one side of the first element body in the thickness direction, the first back surface electrode being conductively bonded to the first pad portion, and the first bonding wire being conductively bonded to the first main surface electrode and the second pad portion. Appendix 12. The semiconductor device according to Appendix 11, further comprising: a third lead arranged at a distance from the first lead and the second lead; and a second bonding wire, wherein the third lead has a third pad portion located on the other side in the first direction with respect to the first pad portion, the first semiconductor element has a second main surface electrode arranged on one side in the thickness direction of the first element body, and the second bonding wire is conductively joined to the second main surface electrode and the third pad portion. Appendix 13. The semiconductor device according to Appendix 12, wherein the second lead has a second terminal portion connected to the other side in the second direction with respect to the second pad portion and at least a portion of which is exposed from the sealing resin, and the third lead has a third terminal portion connected to the other side in the second direction with respect to the third pad portion and at least a portion of which is exposed from the sealing resin.Appendix 14. The semiconductor device according to Appendix 11, further comprising: a fourth lead arranged spaced apart from the first lead and the second lead, a second semiconductor element, and a third bonding wire, wherein the fourth lead has a fourth pad portion located on the other side in the first direction with respect to the first pad portion, the second semiconductor element is arranged on one side in the thickness direction of the fourth pad portion, and has a second element body, a second back surface electrode arranged on the other side of the second element body in the thickness direction, and a third main surface electrode arranged on one side of the second element body in the thickness direction, the second back surface electrode is conductively joined to the fourth pad portion, and the third bonding wire is conductively joined to the third main surface electrode and the first pad portion. Appendix 15. Appendix 16. The semiconductor device according to Appendix 10, further comprising a fifth lead arranged spaced apart from the first lead, the fifth lead having a fifth pad portion located on the other side in the first direction with respect to the first pad portion, the first semiconductor element having a first element body, a first back surface electrode arranged on the other side in the thickness direction of the first element body, and a fourth main surface electrode arranged on one side in the thickness direction of the first element body, the first back surface electrode being conductively joined to the first pad portion, and the first bonding wire being conductively joined to the fourth main surface electrode and the fifth pad portion. the semiconductor device according to Appendix 15, further comprising: a sixth lead arranged spaced apart from the first lead and the fifth lead, a third semiconductor element, and a fourth bonding wire, wherein the sixth lead has a sixth pad portion located on the other side of the fifth pad portion in the first direction, the third semiconductor element being arranged on one side of the sixth pad portion in the thickness direction and having a third element body, a third back surface electrode arranged on the other side of the third element body in the thickness direction, and a sixth main surface electrode arranged on one side of the third element body in the thickness direction, the third back surface electrode being conductively joined to the sixth pad portion, and the fourth bonding wire being bonded to the sixth main surface electrode. Appendix 17. The semiconductor device according to Appendix 16, wherein the fourth bonding wire is conductively joined to the sixth main surface electrode and the fifth pad portion.Appendix 18. The semiconductor device according to Appendix 16, further comprising a seventh lead arranged spaced apart from the first lead, the fifth lead, and the sixth lead, the seventh lead having a seventh pad portion located on one side of the fifth pad portion in the second direction, and the fourth bonding wire being conductively joined to the sixth principal surface electrode and the seventh pad portion.

[0128] A1, A2, A21, A3, A4: semiconductor device 11: first semiconductor element 110: first element body 111: first back surface electrode 112: first main surface electrode 113: second main surface electrode 114: fourth main surface electrode 115: fifth main surface electrode 12: second semiconductor element 121: second back surface electrode 122: third main surface electrode 13: third semiconductor element 131: third back surface electrode 132: sixth main surface electrode 133: seventh main surface electrode 2: first lead 201: first main surface 202: first back surface 203: plating layer 21: first pad portion 22: first terminal portion 3: second lead 301: second main surface 302: second back surface 31: second pad portion 32: second terminal portion 4: third lead 401: Third main surface 402: Third back surface 41: Third pad portion 42: Third terminal portion 51: First bonding wire 52: Second bonding wire 53: Third bonding wire 54: Fourth bonding wire 55: Fifth bonding wire 56: Sixth bonding wire 6: Sealing resin 61: Resin main surface 62: Resin back surface 63: First resin side surface 631: Resin injection mark 632: First region 633: Second region 632a, 633a: Edge 64: Second resin side surface 65: Third resin side surface 66: Fourth resin side surface 7: Fourth lead 701: Fourth main surface 702: Fourth back surface 71: Fourth pad portion 72: Fourth terminal portion 81: Fifth lead 811: Fifth pad portion 812: Fifth terminal portion 82: Sixth lead 821: Sixth pad portion 822: Sixth terminal portion 83: Seventh lead 831: Seventh pad portion 832: Seventh terminal portion 84: Eighth lead 841: Eighth pad portion 842: Eighth terminal portion 85: Ninth lead 851: Ninth pad portion 852: Ninth terminal portion L1, L2, L3, L4, L5: Length

Claims

1. A semiconductor device comprising: a first lead having a first pad portion; a first semiconductor element arranged on one side of the first pad portion in a thickness direction; and a sealing resin covering the first semiconductor element and the first pad portion, wherein the sealing resin has a first resin side surface facing one side in a first direction perpendicular to the thickness direction, and a resin injection mark having a surface rougher than other areas of the first resin side surface is formed on the first resin side surface, and the ratio of the length of the resin injection mark in the thickness direction to the length of the sealing resin in the thickness direction is between 20% and 50%.

2. The semiconductor device according to claim 1, wherein the resin injection mark has a first region that is located on one side of the first pad portion in the thickness direction when viewed in the first direction and does not overlap with the first pad portion.

3. The semiconductor device according to claim 2, wherein the resin injection mark is elongated and extends in the thickness direction and a second direction perpendicular to the first direction.

4. The semiconductor device described in claim 3, wherein the first pad portion has a first main surface facing one side in the thickness direction and a first back surface facing the other side in the thickness direction, and the edge of the first region on the other side in the thickness direction overlaps with the first main surface when viewed in the first direction.

5. The semiconductor device according to claim 4, wherein the resin injection mark has a second region that is connected to the other side in the thickness direction of the first region and overlaps with the first pad portion when viewed in the first direction.

6. The semiconductor device according to claim 5, wherein, when viewed in the first direction, an edge on the other side in the thickness direction of the second region is located on one side in the thickness direction with respect to the first rear surface.

7. The semiconductor device according to claim 5 or 6, wherein the length of said first region in said thickness direction is greater than the length of said second region in said thickness direction.

8. The semiconductor device according to claim 4, wherein the length of said first region in said thickness direction is greater than the length of said first semiconductor element in said thickness direction.

9. The semiconductor device according to claim 3, wherein the resin injection mark is formed on the first resin side surface over the entire length in the second direction.

10. A semiconductor device as described in any one of claims 1 to 9, wherein the first lead has a first terminal portion connected to the first pad portion on one side in the thickness direction and in a second direction perpendicular to the first direction, and at least a portion of which is exposed from the sealing resin, and further comprises a first bonding wire joined to the first semiconductor element.

11. The semiconductor device of claim 10, further comprising a second lead arranged at a distance from the first lead, the second lead having a second pad portion located on one side of the first pad portion in the first direction, the first semiconductor element having a first element body, a first back surface electrode arranged on the other side of the first element body in the thickness direction, and a first main surface electrode arranged on one side of the first element body in the thickness direction, the first back surface electrode being conductively joined to the first pad portion, and the first bonding wire being conductively joined to the first main surface electrode and the second pad portion.

12. The semiconductor device described in claim 11, further comprising a third lead arranged at a distance from the first lead and the second lead, and a second bonding wire, wherein the third lead has a third pad portion located on the other side of the first pad portion in the first direction, the first semiconductor element has a second main surface electrode arranged on one side of the first element body in the thickness direction, and the second bonding wire is conductively joined to the second main surface electrode and the third pad portion.

13. The semiconductor device described in claim 12, wherein the second lead has a second terminal portion connected to the other side of the second direction relative to the second pad portion and at least a portion of which is exposed from the sealing resin, and the third lead has a third terminal portion connected to the other side of the third pad portion in the second direction and at least a portion of which is exposed from the sealing resin.

14. The semiconductor device of claim 11, further comprising: a fourth lead arranged at a distance from the first lead and the second lead; a second semiconductor element; and a third bonding wire, wherein the fourth lead has a fourth pad portion located on the other side of the first pad portion in the first direction; the second semiconductor element is arranged on one side of the fourth pad portion in the thickness direction and has a second element body, a second back surface electrode arranged on the other side of the second element body in the thickness direction, and a third main surface electrode arranged on one side of the second element body in the thickness direction, wherein the second back surface electrode is conductively joined to the fourth pad portion; and the third bonding wire is conductively joined to the third main surface electrode and the first pad portion.

15. The semiconductor device of claim 10, further comprising a fifth lead arranged at a distance from the first lead, the fifth lead having a fifth pad portion located on the other side of the first pad portion in the first direction, the first semiconductor element having a first element body, a first back surface electrode arranged on the other side of the first element body in the thickness direction, and a fourth main surface electrode arranged on one side of the first element body in the thickness direction, the first back surface electrode being conductively joined to the first pad portion, and the first bonding wire being conductively joined to the fourth main surface electrode and the fifth pad portion.

16. The semiconductor device of claim 15, further comprising: a sixth lead arranged at a distance from the first lead and the fifth lead; a third semiconductor element; and a fourth bonding wire, wherein the sixth lead has a sixth pad portion located on the other side of the fifth pad portion in the first direction; the third semiconductor element is arranged on one side of the sixth pad portion in the thickness direction and has a third element body, a third back surface electrode arranged on the other side of the third element body in the thickness direction, and a sixth main surface electrode arranged on one side of the third element body in the thickness direction, wherein the third back surface electrode is conductively joined to the sixth pad portion, and the fourth bonding wire is joined to the sixth main surface electrode.

17. The semiconductor device according to claim 16, wherein the fourth bonding wire is electrically connected to the sixth principal surface electrode and the fifth pad portion.

18. The semiconductor device described in claim 16, further comprising a seventh lead arranged at a distance from the first lead, the fifth lead, and the sixth lead, the seventh lead having a seventh pad portion located on one side of the fifth pad portion in the second direction, and the fourth bonding wire being conductively joined to the sixth main surface electrode and the seventh pad portion.

Images