Optoelectronic component

Abstract

The invention relates to an optoelectronic component (100) comprising the following: - an enveloping material (30) which covers at least one component region (101) to be protected, - an optoelectronic structure (10) which is provided for emitting and / or receiving electromagnetic radiation and is at least partially covered or uncovered by the enveloping material (30), - and a stop device (20) which limits the enveloping material (30) to the at least one component region (101) to be protected, wherein the stop device (20) is interrupted in some regions.

Description

[0001] 2023PF01336 28 January 2025P2023,1342 WO N - 1 –Description OPTOELECTRONIC COMPONENT An optoelectronic component is specified, which can be a radiation-emitting and / or radiation-receiving component. An optically active region of the optoelectronic component intended for radiation emission and / or radiation reception can be designed with a large area. To protect component components such as wire connections, these can be embedded in a potting compound, for example, using a so-called "dam and fill" process. To simultaneously keep other component components, whose embedding is not intended, free from the potting compound, a closed dam can be formed that prevents the potting compound from penetrating component components that are intended to remain uncovered. However, radiation striking the dam can be directly reflected at the dam surface or re-radiated after penetrating the dam.This reflected radiation is disruptive, especially when imaging is to be performed using secondary optics. An alternative approach dispenses with a dam. The penetration of the encapsulant is regulated, for example, by the fill quantity and local geometry, which is determined, for example, by the arrangement of the wire connections. However, this process is difficult to control and accordingly leads to greater fluctuations in the distribution of the encapsulant. 2023PF01336 January 28, 2025P2023,1342 WO N. - 2 –One problem to be solved here is to specify an optoelectronic component with improved properties. This problem is solved, inter alia, by an optoelectronic component with the features of the independent claim. Advantageous embodiments and further developments of the optoelectronic component are specified in the dependent claims. According to at least one embodiment of an optoelectronic component, the component comprises an encapsulating material that covers at least one component region to be protected. For example, the at least one component region to be protected can have one or more connecting conductors of the optoelectronic component. Furthermore, the optoelectronic component can comprise an optoelectronic structure that is provided for emitting and / or receiving electromagnetic radiation, for example, with a wavelength in the visible to infrared spectral range.For example, the optoelectronic structure comprises at least one optoelectronic semiconductor body intended for emitting or receiving electromagnetic radiation, for example, with a wavelength in the visible to infrared spectral range. The optoelectronic structure or the semiconductor body can be designed to have a large area. The at least one semiconductor body has, for example, a first and second semiconductor region of different 2023PF01336 January 28, 2025P2023,1342 WO N. - 3 –Conductivity, wherein an active zone suitable for generating or detecting electromagnetic radiation can be arranged between the first and second semiconductor regions. The first and second semiconductor regions as well as the active zone can each be formed from one or more semiconductor layers. The semiconductor layers can be layers deposited epitaxially on a growth substrate. The growth substrate can remain in the semiconductor body or be at least partially removed. Materials based on arsenide, phosphide, or nitride compound semiconductors, for example, can be considered for the semiconductor regions or semiconductor layers of the semiconductor body."Based on arsenide, phosphide, or nitride compound semiconductors" in this context means that the semiconductor regions or semiconductor layers contain AlnGamIn1-n-mAs, AlnGamIn1-n-mP, or AlnGamIn1-n-mN, where 0 ^ n ^ 1, 0 ^ m ^ 1, and n + m ^ 1. This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it can contain one or more dopants as well as additional components that enhance the characteristic physical properties of Al. n Ga m In 1-n-m As-, Al n Ga m In 1-n-mP or AlnGamIn1-n-mN material. For the sake of simplicity, however, the above formula only includes the essential components of the crystal lattice (Al, Ga, In, As, P, or N), even if these may be partially replaced by small amounts of other substances. Furthermore, silicon-based materials can also be considered for a radiation-receiving semiconductor body. 2023PF01336 January 28, 2025P2023,1342 WO N - 4 –The optoelectronic structure can be at least partially covered or uncovered by the encapsulation material. The optoelectronic structure can be at least partially part of the at least one component region to be protected or at least partially part of a component region to be kept free. Furthermore, the optoelectronic component can have a stop device that limits the encapsulation material to the at least one component region to be protected. In particular, the stop device controls the flow behavior of the encapsulation material applied in a flowable state in order to achieve a desired contour of a flow front of the encapsulation material. Compared to a dam-free component, the distribution of the encapsulation material in the component provided with the stop device is subject to smaller fluctuations.For example, the encapsulating material can be formed by the stop device with precise contours that result in a defined, for example, regular shape, so that regions delimited by the encapsulating material also have precise contours or a defined, for example, regular shape. According to at least one embodiment of the optoelectronic component, the stop device is interrupted in some regions. Compared to a closed dam structure, interruptions in the stop device can advantageously reduce disruptive reflections and thus improve the optical properties, such as the contrast of the component. Furthermore, the interrupted stop device can be manufactured in a shorter time and requires less material. 2023PF01336 January 28, 2025P2023,1342 WO N. - 5 –According to at least one embodiment of an optoelectronic component, this comprises: ^ an encapsulation material that covers at least one component region to be protected, ^ an optoelectronic structure that is provided for the emission and / or reception of electromagnetic radiation and is at least partially covered or uncovered by the encapsulation material, and ^ a stop device that delimits the encapsulation material to the at least one component region to be protected, wherein the stop device is interrupted in some regions. Materials suitable for production by encapsulation are suitable for the encapsulation material. For example, the encapsulation material can contain silicone and / or plastic, for example a thermoplastic material or thermoset material. According to at least one embodiment or configuration, the stop device is not penetrated by the encapsulation material at interruptions.In particular, the stop device prevents the flowable encapsulating material from spreading beyond the stop device. According to at least one embodiment or configuration, the stop device is arranged laterally downstream of the optoelectronic structure. In this case, the encapsulating material can be frame-shaped and surround the optoelectronic structure circumferentially. 2023PF01336 January 28, 2025P2023,1342 WO N. - 6 –According to at least one embodiment or configuration, the optoelectronic structure has a basic shape with corners. For example, the basic shape is understood to mean a profile that the optoelectronic structure has in a plan view of the optoelectronic component. The stop device can be arranged at least at the corners of the optoelectronic structure. In particular, in transition zones in which, for example, a direction of the flow front changes, such as at the corners, the stop device ensures precise contours of the encapsulation material. For example, the optoelectronic structure can have a rectangular basic shape, although deviations from the basic shape are possible within the scope of usual manufacturing tolerances. According to at least one embodiment or configuration, the stop device comprises at least two stop components separated from one another by an interruption.The various stop components can, for example, be assigned to different transition zones. The interrupted stop device, which is composed of separate stop components, offers greater design freedom compared to a closed dam, which must be drawn in one piece during production. A wide variety of geometries of the stop device or the component area to be protected can be realized. According to at least one embodiment or configuration, at least one stop component comprises at least two stop structures. The stop structures can be separated from one another by a gap that is smaller than the gap between the stop components. For a 2023PF01336 January 28, 2025P2023,1342 WO N. - 7 –To compare the size of the gap with the size of the interruption, for example, a lateral extent determined parallel to a main extension plane of the component can be used. According to at least one embodiment or configuration, at least one stop component or stop structure has a round, semicircular, rectangular, wedge-shaped, or stepped cross-sectional profile. The different cross-sectional profiles affect, for example, the distribution of the enveloping material in the component. For example, different cross-sectional profiles can be used for the stop components or stop structures of the stop device. According to at least one embodiment or configuration, at least one stop component or stop structure has a straight or angled shape in plan view.For example, the stop component or stop structure with a straight shape can be arranged at a transition zone and extend transversely to the main extension directions of the optoelectronic structure. Furthermore, the stop component or stop structure with an angled shape can extend, for example, along a transition zone or corner of the optoelectronic structure. According to at least one embodiment or configuration, at least one stop component or stop structure is a three-dimensional element that is printed, glued, dripped, or bonded. For example, the printed stop component or stop structure can be an element produced by additive manufacturing. Furthermore, the bonded stop component or stop structure can be an 2023PF01336 January 28, 2025P2023,1342 WO N. - 8 –Bond pads can be bond wire attached. In particular, precise boundary lines or edges of the three-dimensional elements can contribute to the stopping function of the stopping device. The flowable encapsulating material can spread slightly on flat surfaces up to these boundary lines or edges, but then, due to the surface tension of the encapsulating material, can stop at these boundary lines or edges, thus enabling a defined distribution of the encapsulating material in the component. According to at least one embodiment or configuration, the three-dimensional element is formed from at least one of the following materials: plastic, silicone, metal, ceramic, glass, semiconductor, for example, silicon. For example, different materials and, depending on the material, different manufacturing or fastening methods can be used for the stopping components or structures of the stopping device.According to at least one embodiment or configuration, at least one stop component or stop structure is a depression. The at least one stop component or stop structure can be an etched depression or a depression created by laser ablation. In particular, precise boundary lines or edges of the depressions can contribute to the stopping function of the stop device. According to at least one embodiment or configuration, at least one stop component or stop structure consists of a surface modification to prevent surface wetting by the encapsulation material. For example, the surface modification can be 2023PF01336 January 28, 2025 P2023,1342 WO N. - 9 –This can be a surface structuring, for example by means of nano-imprint lithography, and / or a surface coating, for example a fluorine-containing coating, and / or a material modification, for example by means of chemical activation. According to at least one embodiment or configuration, the optoelectronic component comprises a carrier substrate. The optoelectronic structure can be arranged on the carrier substrate. The carrier substrate can have at least part of the stop device. For example, at least part of the stop components or stop structures formed as three-dimensional elements or consisting of a surface modification can be arranged on the carrier substrate. Furthermore, at least part of the stop components or stop structures formed as depressions can be incorporated into the carrier substrate.According to at least one embodiment or configuration, the optoelectronic structure comprises at least a portion of the stop device. At least a portion of the stop components or stop structures formed as three-dimensional elements or consisting of a surface modification can be arranged on the optoelectronic structure, for example, on a front side of the optoelectronic structure. Furthermore, at least a portion of the stop components or stop structures formed as depressions can be incorporated into the front side of the optoelectronic structure, for example, into the at least one semiconductor body of the optoelectronic structure. The front side of the optoelectronic structure can be located on a side of the 2023PF01336 January 28, 2025P2023,1342 WO N facing away from the carrier substrate. - 10 –optoelectronic structure. The front side of the optoelectronic structure faces, in particular, a front side of the optoelectronic component, which can be provided for emitting and / or receiving radiation. According to at least one embodiment or configuration, the optoelectronic component has at least one electrical connecting conductor connected to the optoelectronic structure. The at least one electrical connecting conductor provides an electrical connection of the optoelectronic structure. The at least one connecting conductor can be arranged in the region of an interruption in the stop device. In this embodiment or configuration, potential damage to the at least one electrical connecting conductor, which can be caused by the dam itself in a closed dam or during the application of the dam, can advantageously be avoided.The optoelectronic component is particularly suitable for vehicle, consumer, and industrial applications. Further advantages, advantageous embodiments, and refinements emerge from the exemplary embodiments described below in conjunction with the figures. Figure 1A shows a schematic plan view of an intermediate stage of an optoelectronic component according to an exemplary embodiment, and Figure 1B shows a schematic 2023PF01336 January 28, 2025P2023,1342 WO N. - 11 –Cross-sectional view of a section of the optoelectronic component according to the embodiment. Figures 2A to 2F are schematic cross-sectional views of sections of optoelectronic components according to various embodiments. Figures 3A to 3E are schematic plan views of sections of optoelectronic components according to various embodiments. Figure 4A is a schematic plan view of an intermediate stage of an optoelectronic component according to an embodiment. Figure 4B is a schematic cross-sectional view of a section A of the optoelectronic component according to the embodiment. Figure 4C is a schematic plan view of section A. Figure 5A is a schematic plan view of a section of an optoelectronic component according to an embodiment. Figure 5B is a schematic cross-sectional view of a section of the optoelectronic component according to the embodiment in an intermediate stage.Figure 6A shows a schematic top view of a section of an optoelectronic component according to an embodiment, and Figure 6B shows a schematic cross-sectional view of a section of the optoelectronic component according to the embodiment in an intermediate stage. Figure 7 shows a schematic top view of a section of an optoelectronic component according to an embodiment. 2023PF01336 January 28, 2025P2023,1342 WO N, - 12 –Figures 8A and 8B show top views of an optoelectronic component according to a first comparative example, and Figure 9 shows a top view of an optoelectronic component according to a second comparative example. In the exemplary embodiments and figures, identical, similar, or similarly acting elements can each be provided with the same reference numerals. The illustrated elements and their relative sizes are not necessarily to scale; rather, individual elements may be exaggerated for clarity and / or clarity. An exemplary embodiment of an optoelectronic component 100 is described in conjunction with Figures 1A and 1B. The optoelectronic component 100 comprises an optoelectronic structure 10 and a carrier substrate 50 on which the optoelectronic structure 10 is arranged. The optoelectronic structure 10 can be designed to have a large area.Furthermore, the optoelectronic structure 10 can have at least one optoelectronic semiconductor body 1 and, like the optoelectronic semiconductor body 1, can be provided for emitting and / or receiving electromagnetic radiation on a front side 10A. The front side 10A is provided, for example, on a substrate 10B of the type described in 2023PF01336 January 28, 2025P2023,1342 WO N. - 13 –The semiconductor body 100 is arranged on a side facing away from the carrier substrate 50 and faces a front side 100A of the component 100. The at least one semiconductor body 1 can, as described above, have a first and second semiconductor region of different conductivity, wherein an active zone suitable for generating or detecting electromagnetic radiation can be arranged between the first and second semiconductor regions (not shown). For the semiconductor regions or semiconductor layers of the semiconductor body 1, materials based on arsenide, phosphide, or nitride compound semiconductors, for example, and in the case of a radiation-receiving semiconductor body 1, materials based on silicon are also possible (cf. the above explanations). For example, the optoelectronic structure 10 emits and / or detects electromagnetic radiation with a wavelength in the visible to infrared spectral range during operation.The optoelectronic structure 10 has a basic shape with four corners 10B. The optoelectronic component 100 further comprises a stop device 20 arranged on the carrier substrate 50. The stop device 20 is interrupted at certain points and has a plurality of stop components 22. In this case, two directly adjacent stop components 22 are separated from one another by an interruption 21. The stop device 20 is arranged laterally downstream of the optoelectronic structure 10, with a stop device 20 arranged at each corner 10B of the optoelectronic structure 10. - 14 –Structure 10 has exactly one stop component 22 arranged thereon. "Laterally arranged downstream" means, for example, following in at least one lateral direction, wherein the at least one lateral direction runs parallel to a main extension plane of the component 100, which is defined by a first lateral direction L1 and a second lateral direction L2. The stop components 22 are three-dimensional elements that are printed or glued onto the carrier substrate 50, for example by means of 3D printing. At least one of the following materials can be considered for the stop components 22: plastic, silicone, metal, ceramic, glass, semiconductor, for example silicon. In plan view, the stop components 22 each have an angled shape (see Figure 1A) that resembles an "L". Furthermore, the stop components 22 each have a semicircular cross-sectional profile (see Figure 1B).The stop device 20 separates at least one component region 101 to be protected by an encapsulating material 30 (cf. Figures 2A to 2F) from at least one component region 102 to be kept free from the encapsulating material 30. For example, the component region 102 to be kept free can be located within the component region 101 to be protected. However, it is also possible for the component region 101 to be protected to be located within the component region 102 to be kept free. The optoelectronic structure 10 can be part of the component region 102 to be kept free and thus uncovered by the encapsulating material 30. However, it is also possible for the optoelectronic structure 10 to be part of the encapsulating material 30, at least in some regions. - 15 –of the component region 101 to be protected and is thus at least partially covered by the enveloping material 30. The stop device 20 limits the enveloping material 30 to the at least one component region 101 to be protected. In particular, the stop device 20 controls the flow behavior of the enveloping material 30 applied in a flowable state in order to achieve a desired contour of a flow front of the enveloping material 30. Compared to a component 100 with a closed dam 25 as shown in Figures 8A and 8B, the interruptions 21 in the stop device 20 can reduce disruptive reflections R and thus improve the optical properties, such as the contrast, of the component 100. In addition, the interrupted stop device 20 can be manufactured in a shorter time and requires less material.Compared to a dam-free component 100 as shown in Figure 9, the distribution of the enveloping material 30 of the component 100 provided with the stop device 20 is subject to smaller fluctuations. The stop device 20 can form the enveloping material 30 with precise contours that result in a defined, for example, regular shape, so that regions such as the at least one component region 102 to be kept free, which are delimited by the enveloping material 30, also have precise contours or a defined, for example, regular shape (cf. Figures 5A, 6A, and 7). 2023PF01336 January 28, 2025P2023,1342 WO N. - 16 –For electrically contacting the optoelectronic structure 10, the optoelectronic component 100 has a plurality of electrical connecting conductors 40 on the carrier substrate 50. The plurality of electrical connecting conductors 40 are part of the component region 101 to be protected, wherein the electrical connecting conductors 40 are covered by the encapsulating material 30 in the finished component 100 (see Figures 5A, 6A, and 7). However, it is also possible for the plurality of electrical connecting conductors 40 to be, at least in some regions, part of the component region 102 to be kept free and thus at least in some regions uncovered by the encapsulating material 30. The electrical connecting conductors 40 are arranged in the region of the interruptions 21.This advantageously prevents potential damage to the electrical connecting conductors 40, which can be caused by the dam 25 itself or during the application of the dam 25 in a closed dam 25 as shown in Figures 8A and 8B. Further possible cross-sectional profiles of stop devices 20 or stop components 22 are described in conjunction with Figures 2A to 2F. As can be seen from Figure 2A, the stop device 20 or its stop components 22 can have a rectangular cross-sectional profile. The sheathing material 30 is stopped at an upper edge 22B of the stop components 22. The upper edge 22B is arranged at a transition from an upper side 22A of the stop component 22 to a side surface 22C of the stop component 22 facing the wrapping material 30.2023PF01336 January 28, 2025P2023,1342 WO N. - 17 –As shown in Figures 2B and 2C, the stop device 20 or its stop components 22 can have a stepped cross-sectional profile. In this case, a region of the side surface 22C can be laterally recessed, with the embodiment shown in Figure 2B being an upper region and the embodiment shown in Figure 2C being a lower region. Here, too, the wrapping material 30 is stopped at the upper edge 22B of the stop components 22. However, the different cross-sectional profiles have different effects on the flow behavior and, accordingly, on the contour of the wrapping material 30. The contour of the wrapping material 30 can therefore be controlled by the cross-sectional profile. As shown in Figures 2D to 2F, the stop device 20 or its stop components 22 can have a wedge-shaped cross-sectional profile.The side surface 22C can extend obliquely, at least in some regions, so that in the obliquely extending region it does not form a right angle with an upper side 50A of the carrier substrate 50. Here, too, the encapsulating material 30 is stopped at the upper edge 22B of the stop components 22, wherein the contour of the encapsulating material 30 can be controlled by the cross-sectional profile. In principle, it can happen that the encapsulating material 30 wets or floods the upper side 22A of the stop component 22 if too much material is poured in. In this case, a sharp edge, as shown in Figures 2A to 2F, can form at the transition from the upper side 22A to a further, vertical side surface 22C', which corresponds to the 2023PF01336 January 28, 2025P2023,1342 WO N. - 18 –facing the area 102 to be kept clear, proves to be advantageous. However, other designs are also possible for the side surface 22C'. For example, the side surface 22C' can be tilted or have a spherical, i.e., convex or concave, angled, or stepped shape. Further possible designs of stop devices 20 are described in conjunction with Figures 3A to 3E, the stop components 22 of which each have an angled shape. As can be seen from Figure 3A, the stop components 22 can each have an L-shape. On the side surface 22C, the stop components 22 can each have a plurality of, for example, semicircular indentations 22D.As can be seen from Figures 3B and 3C, the stop components 22 can each have an L-shape with two transversely extending legs S1 and S2, wherein the legs S1, S2 become wider with increasing distance from a convergence point K in the embodiment shown in Figure 3B and narrower with increasing distance from the convergence point K in the embodiment shown in Figure 3B. As can be seen from Figure 3D, the stop components 22 can each have more than two transversely extending legs S1, S2, S3 and approximately an arcuate shape.2023PF01336 January 28, 2025P2023,1342 WO N. - 19 –As can be seen from Figure 3E, the stop components 22 can each have a T-shape with two legs S1, S2 running perpendicular to each other. The stop components 22 can each be formed finer than the dam 25 shown in Figures 8A and 8B. They can serve, for example, to enhance a capillary effect so that the stop components 22 are wetted more quickly, or to anchor the encapsulation material 30. After encapsulation, they can serve as an orientation mark, for example, during assembly and adjustment of optical elements. A further embodiment of an optoelectronic component 100 is described in conjunction with Figures 4A, 4B, and 4C. In this embodiment, the stop device 20 has different stop components 221, 222, 223, 224, which are arranged at different corners 10B of the optoelectronic structure 10.The configurations of the stop components 221, 222, 223, 224 described below are to be regarded as exemplary and can be modified according to the other exemplary embodiments. The first stop component 221 has an angled or L-shape and a plurality of stop structures 23, wherein two directly adjacent stop structures 23 are separated from one another by a gap 24. The gaps 24 can each be smaller than the interruptions 21 between the stop components 221, 222, 223, 224, wherein, for example, a lateral extent a1 of a gap 24 defined along the second lateral direction L2 is smaller than one along the second 2023PF01336 January 28, 2025P2023,1342 WO N. - 20 –Lateral extension a2 of the interruption 21 defined in the lateral direction L2. For example, the stop structures 23 can be three-dimensional elements with a round cross-sectional profile. The stop structures 23 can, for example, be dripped onto the carrier substrate 50 and formed from silicone. The second stop component 222 has a straight shape and runs transversely to the main extension directions of the optoelectronic structure 10, wherein the main extension directions run parallel to the lateral directions L1, L2. For example, the second stop component 222 can be a three-dimensional element with, for example, a cross-sectional profile as shown in Figures 1B to 2F. The third stop component 223 has an angled or triangular shape with three legs S1, S2, S3.For example, the third stop component 223 can be a three-dimensional element with, for example, a cross-sectional profile as shown in Figures 1B to 2F. The fourth stop component 224 has a straight shape and runs transversely to the main extension directions of the optoelectronic structure 10. For example, the fourth stop component 224 is a three-dimensional element which, as shown in Figures 4B and 4C, can consist of a bonding wire 27 attached to bond pads 26. Furthermore, the optoelectronic component 100 can incorporate all the components associated with the further 2023PF01336 January 28, 2025P2023,1342 WO N. - 21 –The stop function of various stop devices 20 or stop components 22 is explained in more detail in conjunction with Figures 5 to 7. The component 100 shown in Figures 5A and 5B can be designed as shown in Figure 1A, wherein the stop components 22 of the stop device 20 have a rectangular cross-sectional profile as explained in connection with Figure 2A. When the flowable encapsulating material 30 is applied to the area 101 to be protected, for example by means of potting, it is generally stopped at the upper edge 22B of the stop components 22. The flowable encapsulating material 30 can spread slightly on flat surfaces of the carrier substrate 50 up to the upper edges 22B, but then stop at the upper edges 22B due to the surface tension of the encapsulating material 30.In this case, a defined distribution of the enveloping material 30 with precise contours can be realized, especially in the corners or transition zones where, for example, a direction of the flow front changes. Materials suitable for production by casting are suitable for the enveloping material 30. For example, the enveloping material 30 can contain silicone and / or plastic, for example a thermoplastic or thermoset material. Furthermore, the enveloping material 30 can be mixed with particles, for example reflective and / or wavelength-converting and / or absorbing particles. 2023PF01336 January 28, 2025P2023,1342 WO N. - 22 –The component 100 shown in Figures 6A and 6B can be configured as shown in Figure 1A, wherein the stop components 22 of the stop device 20 are recesses in the carrier substrate 50. The stop components 22 can be produced, for example, by etching or laser ablation and have a rectangular cross-sectional profile. When the flowable encapsulating material 30 is applied to the area 101 to be protected, for example, by potting, it is generally stopped at the upper edge 22B of the stop components 22. A defined distribution of the encapsulating material 30 can be achieved, especially in the corners. In addition, the wrapping material 30 can be formed with precise contours. The component 100 shown in Figure 7 can be formed as shown in Figure 1A, wherein the stop components 22 of the stop device 20 consist of surface modifications to prevent wetting by the wrapping material 30.For example, the surface modification can involve surface structuring in the nanometer range, for example, using nano-imprint lithography, and / or surface coatings, for example, fluorine-containing coatings, and / or material modifications, for example, using chemical activation. When applying the flowable encapsulating material 30 to the area 101 to be protected, for example, by casting, it is generally stopped at the outer edge 22F of the stop components 22. A defined distribution of the encapsulating material 30 can be achieved, especially in the corners. Furthermore, the encapsulating material 30 can be formed with precise contours. 2023PF01336 January 28, 2025P2023,1342 WO N. - 23 –The invention is not limited by the description based on the exemplary embodiments. Rather, the invention encompasses any novel feature and any combination of features, including in particular any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments. This patent application claims priority from German patent application 102024103528.5, the disclosure of which is hereby incorporated by reference.

[0002] 2023PF01336 28 January 2025P2023,1342 WO N - 24 –List of reference symbols 1 optoelectronic semiconductor body 10 optoelectronic structure 10A front side 10B corner 20 stop device 21 interruption 22, 221, 222, 223, 224 stop component 22A top side 22B top edge 22C side surface 22C' side surface 22D indentation 22F outer edge 23 stop structure 24 gap 25 closed dam 26 bond pad 27 bond wire 30 encapsulation material 40 electrical connection conductor 50 carrier substrate 50A top side 100 optoelectronic component 100A front side 101 component region to be protected 102 component region to be kept free 2023PF01336 January 28, 2025 P2023,1342 WO N - 25 – a1, a2 lateral distance A section K convergence point L1 first lateral direction L2 second lateral direction R reflection S1, S2, S3 limbs

Claims

2023PF01336 28 January 2025P2023,1342 WO N - 26 –Patent claims1.Optoelectronic component (100) comprising^ an encapsulation material (30) covering at least one component region (101) to be protected,^ an optoelectronic structure (10) provided for the emission and / or reception of electromagnetic radiation and at least partially covered or uncovered by the encapsulation material (30), and^ a stop device (20) delimiting the encapsulation material (30) to the at least one component region (101) to be protected, wherein the stop device (20) is interrupted in regions and has at least two stop components (22, 221, 222, 223, 224) separated from one another by an interruption (21), wherein at least one stop component (22, 221, 222, 223, 224) has at least two stop structures (23) separated from one another by an intermediate space (24), wherein the intermediate space (24) between the stop structures (23) is smaller than the interruption (21) between the stop components (22, 221, 222, 223, 224). 2.Optoelectronic component (100) according to the preceding claim, wherein the encapsulation material (30) does not penetrate the stop device (20) at interruptions (21).

3. Optoelectronic component (100) according to one of the preceding claims, wherein the optoelectronic structure (10) comprises at least one optoelectronic semiconductor body (1).2023PF01336 January 28, 2025P2023,1342 WO N. - 27 –4. The optoelectronic component (100) according to one of the preceding claims, wherein the stop device (20) is arranged laterally downstream of the optoelectronic structure (10).

5. The optoelectronic component (100) according to one of the preceding claims, wherein the optoelectronic structure (10) has a basic shape with corners (10B) and the stop device (20) is arranged at the corners (10B).

6. The optoelectronic component (100) according to one of the preceding claims, wherein at least one stop component (22, 221, 222, 223, 224) or stop structure (23) has a round, semicircular, rectangular, wedge-shaped, or stepped cross-sectional profile.

7. Optoelectronic component (100) according to one of the preceding claims, wherein at least one stop component (22, 221, 222, 223, 224) or stop structure (23) has a straight or angled shape in plan view.8.The optoelectronic component (100) according to one of the preceding claims, wherein at least one stop component (22, 221, 222, 223, 224) or stop structure (23) is a three-dimensional element that is printed, glued, dripped, or bonded.

9. The optoelectronic component (100) according to the preceding claim, wherein the three-dimensional element is formed from at least one of the following materials: plastic, silicone, metal, ceramic, glass, semiconductor. 2023PF01336 January 28, 2025P2023,1342 WO N. - 28 –10. The optoelectronic component (100) according to one of the preceding claims, wherein at least one stop component (22, 221, 222, 223, 224) or stop structure (23) is a recess.

11. The optoelectronic component (100) according to the preceding claim, wherein the stop component (22, 221, 222, 223, 224) or stop structure (23) is a recess etched or produced by laser ablation.

12. Optoelectronic component (100) according to one of the preceding claims, wherein at least one stop component (22, 221, 222, 223, 224) or stop structure (23) consists of a surface modification for preventing surface wetting by the encapsulation material (30), wherein the surface modification comprises a surface structuring and / or surface coating and / or material modification.13.Optoelectronic component (100) according to one of the preceding claims, comprising a carrier substrate (50), wherein the carrier substrate (50) has at least part of the stop device (20).

14. Optoelectronic component (100) according to one of the preceding claims, wherein the optoelectronic structure (10) has at least part of the stop device (20).

15. Optoelectronic component (100) according to one of the preceding claims, comprising at least one electrical connection conductor (40) connected to the optoelectronic structure (10), wherein the at least one2023PF01336 January 28, 2025P2023,1342 WO N. - 29 – electrical connecting conductor (40) is arranged in the region of an interruption (21) of the stop device (20).

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