Bonded body, semiconductor device, method for producing bonded body, and method for producing semiconductor device

Abstract

One aspect of a bonded body according to the present disclosure comprises a metal member and a resin member bonded to the metal member. The bonding surface of the metal member is provided with concavities and convexities. A primer layer is formed on the convexities, and the primer layer on the concavities is less than on the convexities.

Description

Bonded body, semiconductor device, method for manufacturing bonded body, and method for manufacturing semiconductor device

[0001] The present disclosure relates to a bonded body, a semiconductor device, a method for manufacturing a bonded body, and a method for manufacturing a semiconductor device.

[0002] Techniques for joining metal members and resin members, such as adhesive bonding and resin sealing, are used in a variety of products. Since the adhesive strength of the bonded structure significantly affects the reliability of the product, it is important to improve the adhesive strength. Conventionally, a technique for improving the adhesive strength of a bonded structure is disclosed, for example, in Patent Document 1.

[0003] Patent Document 1 discloses a bonding technology in which micrometer-order recesses are formed on the surface of a metal to be bonded to a polymer material by laser processing, protrusions are formed on the inner walls of the recesses, and nanometer-order pores or recesses are formed on the surfaces of the protrusions, thereby improving the adhesion strength of the bonded structure by the anchor effect and the effect of covalent bonding.

[0004] Special table 2019-528182 publication

[0005] However, in the method described in Patent Document 1, although the adhesion strength is improved in the recessed portions due to the anchor effect, this effect is not achieved in the protruding portions, and therefore there is a problem in that sufficient adhesion reliability cannot be obtained.

[0006] The present disclosure has been made in view of the above-mentioned problems, and has an object to provide a bonded structure that can obtain sufficient adhesion reliability, a semiconductor device including such a bonded structure, a method for manufacturing the bonded structure, and a method for manufacturing the semiconductor device.

[0007] One aspect of the joined body of the present disclosure comprises a metal member and a resin member joined to the metal member, wherein the joining surface of the metal member comprises a recess and a protrusion, a primer layer is formed on the protrusion, and the primer layer on the recess is smaller than that on the protrusion.

[0008] In one aspect of the semiconductor device of the present disclosure, at least a part of a bonded structure between a surface electrode, a wire, a conductive layer or an electrode terminal and a resin member is the above-described bonded structure.

[0009] One aspect of the bonded body of the present disclosure includes a step of applying a primer to metal members to form a primer layer, a step of laser-treating the primer layer to form recesses and protrusions on the bonding surfaces of the metal members, and a step of bonding and sealing the recesses and protrusions with a resin member to form a bonded body after forming the recesses and protrusions.

[0010] In one aspect of the method for manufacturing a semiconductor device according to the present disclosure, at least a portion of a bonded body of a surface electrode, a wire, a conductive layer or an electrode terminal and a resin member is bonded by the above-described method for manufacturing a bonded body.

[0011] According to the bonded body, semiconductor device, method for manufacturing a bonded body, and method for manufacturing a semiconductor device of the present disclosure, sufficient adhesion reliability can be obtained.

[0012] Fig. 1 is a cross-sectional view of a bonded body according to embodiment 1 of the present disclosure; Fig. 2 is a process diagram of a manufacturing method of a bonded body according to embodiment 1 of the present disclosure; Fig. 3 is a cross-sectional view along a manufacturing method of a bonded body according to embodiment 1; Fig. 4 is a cross-sectional view of a semiconductor device according to embodiment 2;

[0013] Hereinafter, embodiments to which the present disclosure is applied will be described in detail with reference to the drawings. Note that the drawings used in the following description are for explaining the configuration of the embodiments of the present disclosure, and the size, thickness, dimensions, etc. of each part shown in the drawings may differ from the dimensional relationships of an actual toothbrush.

[0014] (Embodiment 1) [Jointed Structure] Fig. 1 is a cross-sectional view of a joined structure 100 in embodiment 1. In Fig. 1, the joined structure 100 has a configuration in which a metal member 101 and a resin member 102 are joined together. The metal member 101 has recessed portions 103 and protruding portions 104 on a joining surface 106 facing the resin member 102. A plurality of recessed portions 103 (four in Fig. 1, for example) are arranged at intervals along the joining surface 106. The protruding portions 104 are provided between adjacent recessed portions 103. Therefore, the recessed portions 103 and the protruding portions 104 are alternately arranged along the joining surface 106.

[0015] A primer layer 105 is formed on the convex portions 104. The primer layer 105 is formed to cover the convex portions 104. The primer layer 105 is formed on the inner surface of the concave portions 103. The amount of primer layer 105 formed on the concave portions 103 is smaller than the amount of primer layer 105 formed on the convex portions 104.

[0016] There are no particular limitations on the metal member 101 as long as it is made of a metal, such as a pure metal such as Al, Cu, or Fe, or an alloy containing at least one of Al, Cu, Fe, Ni, Au, Pd, Ag, or Sn as a main component.

[0017] The resin member 102 is not particularly limited, but examples thereof include epoxy resin, acrylic resin, modified silicone resin, silicone resin, nylon resin, urethane resin, polypropylene resin, polyethylene resin, polystyrene, polyether ketone resin, polyether ether ketone resin, vinyl chloride resin, ABS resin, amide resin, polycarbonate resin, polyimide resin, phenol resin, melamine resin, urea resin, polyacetal resin, and polyphenylene sulfide resin.

[0018] The material for forming the primer layer 105 is not particularly limited, but any known primer can be used, such as a composition containing an epoxy resin, an acrylic resin, a urethane resin, a cyanoacrylate-based resin, a silane coupling agent-based resin, a synthetic rubber-based resin, an amine-based resin, a carboxyl-based resin, a polyrotaxane-based resin, etc., which are generally used as primers. In particular, a primer containing polyrotaxane is preferred.

[0019] Polyrotaxanes are compounds with a complex molecular structure consisting of an axial molecule and multiple cyclic molecules that encapsulate the axial molecule. The free movement of the cyclic molecules results in stress relaxation and improved adhesion of the bonded structure. Examples of polymers that form the chain portion of the axial molecule include polyvinyl alcohol, polyvinylpyrrolidone, cellulose-based resins, polyacrylamide, polyethylene oxide, polyether-based resins, polyvinyl acetal, polyvinyl methyl ether, polyamines, polyethyleneimine, polyacrylonitrile, polyoxazoline, casein, gelatin, starch, olefin-based resins, polyester-based resins, polyvinyl chloride, styrene-based resins, acrylic resins, polycarbonate, polyurethane, polyvinyl butyral, polyisobutylene, ABS resins, polyamide resins, polyimide resins, polysiloxane-based resins, polycarbonate resins, and polysulfone resins. These polymers may be random copolymers or block copolymers, or may be modified. Furthermore, the bulky groups formed at both ends of the chain portion are not particularly limited as long as they prevent the cyclic molecule from detaching from the axial molecule. From the viewpoint of bulkiness, examples include an adamantyl group, a trityl group, a fluoresceinyl group, a dinitrophenyl group, and a pyrenyl group. The cyclic molecule may have a ring large enough to encapsulate the axial molecule. Examples of such rings include a cyclodextrin ring, a crown ether ring, a benzocrown ring, a dibenzocrown ring, and a dicyclohexanocrown ring.

[0020] The polyrotaxane preferably has a carboxylic acid group, an aldehyde group, or both as functional groups. Because the carboxylic acid and aldehyde groups are highly reactive, they are expected to have a strong interaction with the metal member 101 and the resin member 102, improving adhesion.

[0021] The depth of the recess 103 is preferably in the range of 1 μm or more and 1000 μm or less. If the depth of the recess 103 is less than 1 μm, a sufficient anchor effect is not exhibited, and the effect of improving adhesion is poor. If the depth of the recess 103 exceeds 1000 μm, it is difficult for the resin member 102 to enter the recess 103, and sufficient adhesion cannot be obtained. By setting the depth of the recess 103 in the range of 1 μm or more and 1000 μm or less, a sufficient anchor effect and sufficient adhesion with the resin member 102 can be obtained.

[0022] If the area of ​​the convex portions 104 is X and the area of ​​the concave portions 103 is Y, the area ratio of the convex portions 104 to the concave portions 103, expressed as X / Y, is preferably in the range of 0.001 or more and 5 or less. If the value expressed as X / Y is less than 0.001, the area of ​​the primer layer 105 is small and sufficient adhesion cannot be obtained. If the value expressed as X / Y is greater than 5, a sufficient anchoring effect cannot be obtained, and therefore sufficient adhesion cannot be obtained. By setting the value expressed as X / Y in the range of 0.001 or more and 5 or less, sufficient adhesion and anchoring effect can be obtained.

[0023] [Method of Manufacturing Bonded Body] Next, a method of manufacturing the bonded body 100 according to the first embodiment will be described with reference to Fig. 2 to Fig. 4. Fig. 2 is a process chart of the method of manufacturing the bonded body 100.

[0024] 2, the manufacturing method of the bonded structure 100 includes forming a primer layer 105 on the metal member 101 (step S1), forming recesses 103 and protrusions 104 on a bonding surface 106 of the metal member 101 (step S2), and bonding and sealing the resin member 102 to the metal member 101 (step S3). This will be described in detail below.

[0025] 3 and 4 are cross-sectional views showing a manufacturing method of a bonded body according to embodiment 1. First, as shown in Fig. 3, in step S1, a primer is applied to bonding surfaces 106 of metal members 101 to form primer layers 105.

[0026] Any method for applying the primer may be used, including brush coating, spray coating, spin coating, and the like. The primer may be diluted with a volatile solvent, and examples of diluting solvents include acetone, methyl ethyl ketone, toluene, cyclohexane, ethanol, methanol, propanol, and 2-butanone. Before applying the primer, the metal member 101 may be subjected to a surface treatment. Examples of surface treatments for the metal member 101 include solvent degreasing, water washing degreasing, polishing, ultraviolet treatment, corona treatment, and flame treatment.

[0027] Next, as shown in Fig. 4, in step S2, a laser beam L is irradiated onto the surface of the metal member 101, thereby forming recesses 103 and protrusions 104 on the joining surface 106 of the metal member 101. In areas not irradiated with the laser beam L, the primer layer 105 is heated by the thermal effect of the laser beam L, and the metal member 101 and the primer layer 105 are firmly adhered to each other. In areas irradiated with the laser beam L, the metal member 101 is melted or evaporated by ablation, forming recesses 103. At this time, the primer layer 105 is also partially evaporated, so that the primer layer in the recesses 103 is smaller than the primer layer 105 in the protrusions 104.

[0028] The laser L is preferably a pulsed laser in order to avoid deformation of the metal member 101. The wavelength of the pulsed laser is not particularly limited, but examples of wavelengths suitable for metal processing are preferably wavelengths of 200 nm or more and 10,000 nm or less, and more preferably wavelengths of 400 nm or more and 2,000 nm or less. ２ The laser L may be irradiated in a gas atmosphere such as Ar or He.

[0029] The area ratio (X / Y) of the area X of the convex portion 104 to the area Y of the concave portion 103 and the depth of the concave portion 103 can be controlled by changing the energy of the pulse laser, the number of scans, and the distance between the spots of the laser L.

[0030] 1, in step S3, the resin member 102 is joined to the metal member 101 to seal it, thereby obtaining a joined body 100 in which the metal member 101 having the primer layer 105 and the resin member 102 are joined together.

[0031] The primer layer 105 formed in the recess 103 is not essential, and the primer layer 105 may not be formed in the recess 103 by irradiation with the laser L.

[0032] [Examples of Embodiment 1] The effects of the present disclosure will be made clearer by the following examples. Note that the present disclosure is not limited to the following examples, and can be implemented with appropriate modifications within the scope of the present disclosure.

[0033] (Example 1-168, Comparative Example 1) In this example of the joined body of the first embodiment, a shear tensile test in accordance with JIS K 6850 was carried out on the samples of Example 1-168 and Comparative Example 1 having the specifications shown in Table 1-4.

[0034] The primer used in the samples of Examples 1-42 was 3-aminopropyltrimethoxysilane, a silane coupling agent. The primer used in the samples of Examples 43-84 was a solution of SH2400P (hydroxyl group), a polyrotaxane manufactured by Advanced Soft Materials, dissolved in 10% acetone. The primer used in the samples of Examples 85-126 was the SH2400P of Examples 43-84, modified by oxidizing the hydroxyl group of the functional group to a carboxylic acid group. The primer used in the samples of Examples 127-168 was the SH2400P of Examples 43-84, modified by oxidizing the hydroxyl group of the functional group to an aldehyde group.

[0035] The resin member 102 was made of Mitsui Chemicals' two-component epoxy adhesive EH456, and the metal member 101 was made of A5052 material. After cleaning the A5052 material with acetone, a primer solution was applied. After the solvent was evaporated, laser processing was performed using an MX-Z2000H laser (wavelength: 1,062 nm, laser L spot diameter: approximately 45 μm) manufactured by Omron Corporation.

[0036] At this time, the area ratio (X / Y) of the area X of the convex portion 104 to the area Y of the concave portion 103 and the depth of the concave portion 103 were controlled by changing the energy of the pulse laser, the number of scans, and the spacing between the spots of the laser L. The area ratio (X / Y) of the area X of the convex portion 104 to the area Y of the concave portion 103 and the depth of the concave portion 103 were measured using a laser microscope. EH456 was applied to the obtained metal members, and they were bonded to produce a bonded body. In Comparative Example 1, no primer was used and no laser treatment was performed.

[0037] The adhesive strength was measured by a shear tensile test in accordance with JIS K 6850, with a strength of 5 MPa or less being evaluated as x, 5 MPa to 8 MPa being evaluated as ◯, 8 MPa to 12 MPa being ⊚, and ⊚◎ being evaluated as greater than 12 MPa.

[0038]

[0039]

[0040]

[0041]

[0042] As shown in Table 1-4, samples without primer or laser treatment were rated as ×, whereas samples with primer coating and laser treatment showed improved strength and were rated as ◯, ⊚, or ⊚◎. It is believed that the improved adhesion was due to the anchoring effect and the effect of the primer on the convex portions. Furthermore, when the depth of the concave portions 103 was between 1 μm and 1000 μm, and the area ratio (X / Y) of the area X of the convex portions 104 to the area Y of the concave portions 103 was between 0.001 and 5, the strength was even higher. This is believed to be due to the full expression of the primer and anchoring effects. In the case of polyrotaxane, when the functional group was carboxylic acid or aldehyde, the strength was higher than that of hydroxyl groups. This is believed to be due to the fact that carboxylic acids and aldehydes are more reactive than hydroxyl groups, and therefore interact more strongly with the A5052 material and adhesive.

[0043] As described above, it was confirmed that in the bonded body 100 in which the primer layer 105 is formed on the convex portions 104 and the primer layer 105 on the concave portions 103 is smaller than that on the convex portions 104, sufficient anchor effect and adhesion reliability can be obtained.

[0044] Next, a second embodiment of the present disclosure will be described. In the following description of other embodiments, parts having the same configurations and operations as those described in the first embodiment will be denoted by the same reference numerals as appropriate, and description thereof will be omitted. Only parts different from the first embodiment will be described below.

[0045] 5 is a cross-sectional view of a semiconductor device according to embodiment 2 of the present invention. As shown in Fig. 5, semiconductor device 200 includes semiconductor element 201, wires 202A and 202B, electrode terminals 203, resin member 204, insulating substrate 207, conductive layer 208, and surface electrode 210.

[0046] The semiconductor element 201 is mounted on one side in the thickness direction (hereinafter referred to as "one side in the thickness direction") of the insulating substrate 207. The other side in the thickness direction (hereinafter referred to as "other side in the thickness direction"), which is opposite to the surface of the insulating substrate 207 on which the semiconductor element 201 is mounted, is bonded to the heat spreader 209.

[0047] A conductive layer 208 made of a metal member is provided on the surface of the insulating substrate 207. The semiconductor element 201 is joined to the conductive layer 208 by solder 206. The semiconductor element 201 has an insulated gate bipolar transistor (IGBT), a diode (Di), or the like formed on a semiconductor substrate made of, for example, silicon (Si), silicon carbide (SiC), or gallium nitride (GaN).

[0048] However, the semiconductor element 201 is not limited to the above configuration and may be, for example, an insulated gate field effect transistor (MOSFET) or a high electron mobility transistor (HEMT). Furthermore, the semiconductor element 201 may be configured with a plurality of elements, or a plurality of types of semiconductor elements may be mounted.

[0049] The insulating substrate 207 is made of, for example, aluminum nitride (AlN). A resin case 205 is fixed to the insulating substrate 207 on which the semiconductor element 201 is mounted. The resin case 205 is made of, for example, polyphenylene sulfide resin.

[0050] An electrode terminal 203 made of a metal material is attached to the resin case 205. A surface electrode 210 is provided on one side in the thickness direction of the semiconductor element 201. The surface electrode 210 is made of a metal material. The electrode terminal 203 and the surface electrode 210 are electrically connected by a wire 202A. The wire 202A connects the electrode terminal 203 and the surface electrode 210 by wire bonding.

[0051] Similarly, the electrode terminal 203 and the conductive layer 208 are electrically connected by a wire 202B. The wire 202B connects the electrode terminal 203 and the conductive layer 208 by wire bonding. The wire 202A and the wire 202B are wires made of a conductive metal material such as Au or Al.

[0052] 1 and 4 on at least a portion of the surface of the wire 202A, the wire 202B, the surface electrode 210, the electrode terminal 203, and the conductive layer 208. A primer layer 105 is formed on the protrusion 104, and a smaller amount of the primer layer 105 is formed on the recess 103 than on the protrusion 104.

[0053] Note that the recesses 103, the protrusions 104, and the primer layer 105 may or may not be formed at the locations where the wire 202A and the electrode terminal 203 are electrically connected, the locations where the wire 202A and the surface electrode 210 are electrically connected, the locations where the wire 202B and the electrode terminal 203 are electrically connected, and the locations where the wire 202B and the conductive layer 208 are electrically connected. Even if the recesses 103, the protrusions 104, and the primer layer 105 are formed at the above-mentioned electrically connected locations, electrical connection can be ensured in the recesses 103 where the primer layer 105 is small.

[0054] Furthermore, semiconductor device 200 is sealed with resin member 204 as a sealing resin. In the semiconductor device configured in this manner, surface electrode 210, wire 202A, wire 202B, conductive layer 208, and electrode terminal 203 are firmly bonded to resin member 204 due to the anchor effect and the primer effect of protrusion 104, so that semiconductor device 200 with a resin seal that has long-term durability can be obtained.

[0055] [Method for Manufacturing Semiconductor Device] Next, a method for manufacturing a semiconductor device according to embodiment 2 will be described. In the method for manufacturing semiconductor device 200 according to embodiment 2, surface electrode 210, wire 202A, wire 202B, conductive layer 208, or electrode terminal 203 is sealed with resin member 204, and at least a portion of the bonded body of surface electrode 210, wire 202A, wire 202B, conductive layer 208, or electrode terminal 203 and resin member 204 is bonded by the method for manufacturing a bonded body according to embodiment 1. This will be described in detail below.

[0056] First, an insulating substrate 207 is prepared. A conductive layer 208 made of a metal member is provided on the surface of the insulating substrate 207. A semiconductor element 201 is placed on the conductive layer 208 via solder 206, and the semiconductor element 201 is bonded to the conductive layer 208 by a reflow process. This electrically connects the semiconductor element 201 and the conductive layer 208.

[0057] Here, the semiconductor element 201 may have the recesses 103, the protrusions 104, and the primer layer 105 formed in advance on the surface electrode 210 formed from a metal member. After applying a primer, the recesses 103, the protrusions 104, and the primer layer 105 are formed by irradiating with a laser L. The primer layer 105 is heated by the thermal effect of the laser L, and the surface electrode 210 and the primer layer 105 are firmly adhered to each other. At the locations irradiated with the laser L, the surface electrode 210 melts or vaporizes due to ablation, forming the recesses 103. At this time, the primer layer 105 also partially evaporates, so that the primer layer in the recesses 103 becomes smaller than the primer layer in the protrusions 104.

[0058] The laser L is preferably a pulsed laser in order to avoid deformation of the surface electrode 210. The wavelength of the pulsed laser is not particularly limited, but examples of wavelengths suitable for metal processing are preferably wavelengths of 200 nm or more and 10,000 nm or less, and more preferably wavelengths of 400 nm or more and 2,000 nm or less. ２ The laser L may be irradiated in a gas atmosphere such as Ar or He.

[0059] The area ratio (X / Y) of the area X of the convex portions 104 to the area Y of the concave portions 103, and the depth of the concave portions 103 can be controlled by changing the energy of the pulse laser, the number of scans, and the interval between the spots of the laser L. Furthermore, in addition to the surface electrode 210, the conductive layer 208 may be coated with a primer and then irradiated with the laser L to form the concave portions 103, the convex portions 104, and the primer layer 105 on the surface of the conductive layer 208.

[0060] Next, electrode terminal 203 formed of a metal member is electrically connected to semiconductor element 201 by wire 202A formed of a metal member. Wire 202A is bonded to electrode terminal 203 and semiconductor element 201 by, for example, a wire bonding device. Similarly, electrode terminal 203 and conductive layer 208 are electrically connected by wire 202B by, for example, a wire bonding device.

[0061] The wires 202A and 202B may be irradiated with laser L after being coated with a primer, so that the recesses 103, protrusions 104 and primer layer 105 are formed in advance on the surfaces of the wires 202A and 202B, respectively.

[0062] Next, the insulating substrate 207 and the semiconductor element 201 mounted on the insulating substrate 207 are sealed with the resin member 204. For example, a liquid sealing material such as epoxy resin is used as the resin member 204, which is poured into the resin case 205 until the semiconductor element 201, wires 202A, and wires 202B mounted on the insulating substrate 207 are immersed in the resin member 204, and is then hardened by heat treatment. As a result, the recesses 103, protrusions 104, and primer layer 105 are formed on at least a portion of the surface electrode 210, conductive layer 208, electrode terminal 203, wires 202A, and wires 202B formed from the metal member, and the resin member 204 is firmly bonded to the surface electrode 210.

[0063] Therefore, in the semiconductor device according to the second embodiment, the surface electrode 210, the conductive layer 208, the electrode terminal 203, and the wire 202A or 202B are resin-sealed with the resin member 204, and at least a part of the bonded structure between the surface electrode 210, the conductive layer 208, the electrode terminal 203, the wire 202A or 202B and the resin member 204 comprises the bonded structure 100 described in the first embodiment. According to this configuration, it is possible to obtain the semiconductor device 200 including the bonded structure in which the surface electrode 210, the conductive layer 208, the electrode terminal 203, the wire 202A, and the wire 202B, which are formed of a metal member, are firmly bonded to the resin member 204.

[0064] While preferred embodiments of the present disclosure have been described above with reference to the accompanying drawings, it goes without saying that the present disclosure is not limited to these examples. The shapes and combinations of the components shown in the above examples are merely examples, and various modifications can be made based on design requirements, etc., without departing from the spirit of the present disclosure.

[0065] For example, immediately before sealing with the resin member 204, a primer may be applied to at least a portion of the surface electrode 210, the conductive layer 208, the electrode terminal 203, the wire 202A, and the wire 202B, and then laser L may be irradiated to form the recess 103, the protrusion 104, and the primer layer 105, thereby producing the semiconductor device 200.

[0066] Furthermore, the present disclosure is not limited to application to the semiconductor device described above, but is a technology that can be widely applied to fields in which resin-metal bonding is used, such as vehicle parts, electric railway parts, elevator parts, aircraft parts, satellite parts, optical communication parts, industrial robot parts, generator parts, air conditioning / refrigeration equipment parts, and home appliance parts.

[0067] REFERENCE SIGNS LIST 100 Bonded body, 101 Metal member, 102 Resin member, 103 Concave portion, 104 Convex portion, 105 Primer layer, 106 Bonding surface, 200 Semiconductor device, 201 Semiconductor element, 202A, 202B Wire, 203 Electrode terminal, 204 Resin member, 208 Conductive layer, 210 Surface electrode

Claims

1. A joined body comprising: a metal member; and a resin member joined to the metal member, wherein the joining surface of the metal member has recesses and protrusions, a primer layer is formed on the protrusions, and the primer layer on the recesses is thinner than that on the protrusions.

2. The bonded structure according to claim 1, wherein the primer layer contains polyrotaxane.

3. The conjugate according to claim 2, wherein the functional group of the polyrotaxane contains a carboxylic acid, an aldehyde, or both.

4. The bonded structure according to any one of claims 1 to 3, wherein the depth of the recess is 1 µm or more and 1000 µm or less.

5. A bonded structure according to any one of claims 1 to 4, wherein, when the area of ​​the convex portion is X and the area of ​​the concave portion is Y, the value represented by X / Y is 0.001 or more and 5 or less.

6. A semiconductor device in which a surface electrode, a wire, a conductive layer or an electrode terminal is sealed with a resin member, wherein at least a part of the bonded body between the surface electrode, the wire, the conductive layer or the electrode terminal and the resin member is the bonded body described in any one of claims 1 to 5.

7. A method for manufacturing a joined body, comprising: a step of applying a primer to metal members to form a primer layer; a step of laser-treating the primer layer to form recesses and protrusions on the joining surfaces of the metal members; and a step of joining and sealing the metal members together with a resin member after the recesses and protrusions have been formed.

8. A method for manufacturing a semiconductor device in which a surface electrode, a wire, a conductive layer, or an electrode terminal is sealed with a resin member, wherein at least a portion of a bonded body between the surface electrode, the wire, the conductive layer, or the electrode terminal and the resin member is bonded by the method for manufacturing a bonded body described in claim 7.

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