Electronic component

Abstract

This electronic component comprises: a first body that includes a capacitor element; a second body that is mounted on the first body and that includes an elastic wave element; and a band-pass filter circuit that includes a capacitor element and an elastic wave element. The capacitor elements contain a first dielectric that is composed of a first dielectric material for which the temperature coefficient of resonant frequency is a first value. The elastic wave elements contain a second dielectric that is composed of a second dielectric material for which the temperature coefficient of resonant frequency is a second value. The first dielectric and the second dielectric are selected such that the absolute value of the sum of the first value and the second value or the absolute value of the average of the first value and the second value is less than the absolute value of the second value.

Description

Electronic Components

[0001] The present invention relates to an electronic component having a main body and components mounted on the main body.

[0002] Filters such as low-pass filters, high-pass filters, and band-pass filters are constructed using multiple resonators. Examples of resonators used in these filters include LC resonators constructed using inductors and capacitors, and acoustic wave resonators constructed using acoustic wave elements. An acoustic wave element is an element that utilizes acoustic waves. Acoustic wave elements include surface acoustic wave elements that utilize surface acoustic waves and bulk acoustic wave elements that utilize bulk acoustic waves.

[0003] One of the performance requirements for a filter is that the change in attenuation characteristics due to temperature change be small, i.e., that the temperature coefficient of the resonant frequency be small. For example, Japanese Patent Application Publication No. 3-41802 discloses a temperature-compensated microwave stripline filter including two dielectric substrates, each of which has a resonant electrode formed on its inner surface and a ground conductor formed on its outer surface. In Japanese Patent Application Publication No. 3-41802, one of the dielectric substrates is made of a ceramic material with a negative temperature coefficient of the resonant frequency, and the other is made of a ceramic material with a positive temperature coefficient of the resonant frequency, thereby mutually compensating for fluctuations in the resonant frequency due to temperature change.

[0004] As a filter device, in addition to a filter device configured using only LC resonators or only acoustic wave resonators, a hybrid filter device configured using an LC resonator and an acoustic wave resonator is known. In a hybrid filter device, for example, a second body including an acoustic wave resonator is mounted on a first body including an LC resonator.

[0005] Here, we consider suppressing the change in band attenuation characteristics with temperature changes in a hybrid filter device. For example, it is conceivable to suppress the change in band attenuation characteristics with temperature changes by using a dielectric material with a small absolute value of the temperature coefficient of the resonant frequency for the acoustic wave element constituting the acoustic wave resonator. The absolute value of the temperature coefficient of the resonant frequency can be reduced by combining materials with different temperature coefficients of the resonant frequency. However, constructing an acoustic wave element using a dielectric material that combines multiple materials has the problem of increasing the cost of the acoustic wave element. Another problem is that it is difficult to realize a combination of materials that satisfies the characteristics of the acoustic wave element, resonator, and filter other than the temperature coefficient of the resonant frequency.

[0006] An object of the present invention is to provide an electronic component that includes a first body and a second body mounted on the first body, and that is capable of suppressing changes in characteristics due to temperature.

[0007] The electronic component of the present invention includes a first body including a first element, a second body mounted on the first body and including a second element, and a circuit including the first element and the second element. The first element includes a first dielectric made of a first dielectric material having a temperature coefficient of resonant frequency of a first value. The second element includes a second dielectric made of a second dielectric material having a temperature coefficient of resonant frequency of a second value. The first and second dielectrics are selected so that the absolute value of the sum of the first and second values ​​or the absolute value of the average of the first and second values ​​is smaller than the absolute value of the second value.

[0008] In the electronic component of the present invention, the first dielectric and the second dielectric are selected to satisfy the above-mentioned requirements, thereby making it possible to realize an electronic component whose characteristics are prevented from changing with temperature.

[0009] 1 is a perspective view showing an electronic component according to a first embodiment of the present invention; FIG. 2 is a perspective view showing a first main body according to the first embodiment of the present invention; FIG. 3 is a perspective view showing the first main body according to the first embodiment of the present invention; FIG. 4 is a block diagram conceptually showing a circuit configuration of the electronic component according to the first embodiment of the present invention; FIG. 5 is a circuit diagram showing an example of a third circuit portion according to the first embodiment of the present invention; FIG. 6 is a perspective view showing a part of the interior of the first main body according to the first embodiment of the present invention; FIG. 7 is a characteristic diagram showing an example of the pass attenuation characteristics of the bandpass filter circuit according to the first embodiment of the present invention; FIG. 8 is a characteristic diagram showing the pass attenuation characteristics of the third circuit portion obtained by a first simulation; FIG. 9 is a characteristic diagram showing the pass attenuation characteristics of the third circuit portion obtained by a second simulation; FIG. 10 is a circuit diagram showing a modified example of the third circuit portion according to the first embodiment of the present invention; FIG. 11 is a block diagram conceptually showing a circuit configuration of an electronic component according to a second embodiment of the present invention; FIG. 12 is a circuit diagram showing an example of the configuration of a fourth circuit portion according to the second embodiment of the present invention; 10A and 10B are characteristic diagrams showing the pass loss characteristics of the sub-circuit obtained by the fourth simulation, and the return loss characteristics of the sub-circuit obtained by the fourth simulation.

[0010] [First embodiment] Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. First, the configuration of an electronic component 1 according to a first embodiment of the present invention will be described with reference to Figs. 1 to 3. Fig. 1 is a perspective view showing the electronic component 1. Figs. 2 and 3 are perspective views showing a first main body.

[0011] The electronic component 1 according to this embodiment includes a first body 50 and a second body 80 mounted on the first body 50. The electronic component 1 further includes a circuit including a plurality of elements provided in the first body 50 and at least one element provided in the second body 80. In this embodiment, the electronic component 1 includes, as the circuit, a bandpass filter circuit that selectively passes signals of frequencies within a predetermined passband.

[0012] The first body 50 includes a plurality of laminated dielectric layers and a plurality of conductors (a plurality of conductor layers and a plurality of through holes). Each of the plurality of dielectric layers is made of a dielectric material. In this embodiment, for example, low-temperature co-fired ceramics (LTCC) is used as the dielectric material. The dielectric constant of the dielectric material may be, for example, 8 or more.

[0013] The first body 50 has a first surface 50A and a second surface 50B located at both ends in the stacking direction T of the multiple dielectric layers, and four side surfaces 50C to 50F connecting the first surface 50A and the second surface 50B. The side surfaces 50C and 50D face in opposite directions from each other, and the side surfaces 50E and 50F also face in opposite directions from each other. The side surfaces 50C to 50F are perpendicular to the first surface 50A and the second surface 50B.

[0014] Here, the X direction, Y direction, and Z direction are defined as shown in FIGS. 1 to 3. The X direction, Y direction, and Z direction are perpendicular to one another. In this embodiment, a direction parallel to the stacking direction T is defined as the Z direction. The Z direction is also a direction parallel to the direction in which the first main body 50 and the second main body 80 are aligned. The direction opposite to the X direction is defined as the -X direction, the direction opposite to the Y direction is defined as the -Y direction, and the direction opposite to the Z direction is defined as the -Z direction. The expression "when viewed from a predetermined direction (for example, the stacking direction T)" means that the object is viewed from a position away from the predetermined direction or a direction parallel to the predetermined direction.

[0015] As shown in FIGS. 1 to 3, the first surface 50A is located at the end of the first main body 50 in the Z direction. The first surface 50A is both the top surface of the first main body 50 and the mounting surface for mounting the second main body 80. The second surface 50B is located at the end of the first main body 50 in the -Z direction. The second surface 50B is also the bottom surface of the first main body 50. FIG. 2 shows the first main body 50 as viewed from the first surface 50A side. FIG. 3 shows the first main body 50 as viewed from the second surface 50B side.

[0016] The side surface 50C is located at the end of the first body 50 in the -X direction. The side surface 50D is located at the end of the first body 50 in the X direction. The side surface 50E is located at the end of the first body 50 in the -Y direction. The side surface 50F is located at the end of the first body 50 in the Y direction.

[0017] The first body 50 further includes a plurality of electrodes 111, 112, 113, 114, 115, 116, 117, 118, and 119 provided on the second surface 50B of the first body 50. The electrodes 111, 112, and 113 are arranged in this order in the X direction at positions closer to the side surface 50E than to the side surface 50F. The electrodes 115, 116, and 117 are arranged in this order in the −X direction at positions closer to the side surface 50F than to the side surface 50E.

[0018] Electrode 114 is disposed between electrode 113 and electrode 115. Electrode 118 is disposed between electrode 111 and electrode 117. Electrode 119 is disposed between electrode 112 and electrode 116. Electrode 119 is disposed approximately in the center of second surface 50B.

[0019] The first body 50 further includes four electrodes 121, 122, 123, and 124 provided on the first surface 50A of the first body 50. The electrodes 121 and 122 are arranged in this order in the X direction at positions closer to the side surface 50E than to the side surface 50F. The electrodes 123 and 124 are arranged in this order in the −X direction at positions further ahead of the electrodes 121 and 122 in the Y direction.

[0020] The second body 80 further includes four electrodes 81, 82, 83, and 84. When the second body 80 is mounted on the first body 50, the electrodes 81 to 84 face the electrodes 121 to 124 of the first body 50, respectively. The electrodes 81 to 84 are physically connected to the electrodes 121 to 124 by, for example, solder bumps 7.

[0021] The size of the planar shape of the first body 50 (the shape when viewed from the stacking direction T) is different from the size of the planar shape of the second body 80. In the example shown in FIG. 1 , the planar shape of the first body 50 is larger than the planar shape of the second body 80.

[0022] 3, the second main body 80 is disposed so as to overlap the center of gravity of the first surface 50A when viewed from the stacking direction T. The center of gravity of the second main body 80 when viewed from the stacking direction T may or may not coincide with the center of gravity of the first surface 50A.

[0023] The electronic component 1 may further include a sealing portion (not shown) that seals the second body 80. The sealing portion (not shown) covers the periphery of the second body 80 and at least a part of the first surface 50A of the first body 50. The sealing portion may further cover the side surfaces 50C to 50F of the first body 50. The sealing portion is made of, for example, resin.

[0024] Next, the circuit configuration of the electronic component 1 will be described with reference to Fig. 4. Fig. 4 is a block diagram conceptually illustrating the circuit configuration of the electronic component 1. The electronic component 1 includes a first signal terminal 2, a second signal terminal 3, and a first circuit portion 10, a second circuit portion 20, and a third circuit portion 30 that are provided between the first signal terminal 2 and the second signal terminal 3 in terms of the circuit configuration. Note that in this application, the expression "in terms of the circuit configuration" is used to refer to the arrangement on a circuit diagram, rather than the arrangement in a physical configuration.

[0025] Each of the first and second signal terminals 2 and 3 is a terminal for inputting or outputting a signal. That is, when a signal is input to the first signal terminal 2, the signal is output from the second signal terminal 3. When a signal is input to the second signal terminal 3, the signal is output from the first signal terminal 2.

[0026] 2 and 3, two electrodes of the electrodes 111 to 119 correspond to the first and second signal terminals 2 and 3. The remaining seven electrodes of the electrodes 111 to 119 other than the two electrodes may be connected to ground.

[0027] The first circuit portion 10 has a first end 10a and a second end 10b. The second circuit portion 20 has a first end 20a and a second end 20b. The third circuit portion 30 has a first end 30a and a second end 30b. The first end 10a of the first circuit portion 10 is connected to the first signal terminal 2. The first end 30a of the third circuit portion 30 is connected to the second end 10b of the first circuit portion 10. The first end 20a of the second circuit portion 20 is connected to the second end 30b of the third circuit portion 30. The second end 20b of the second circuit portion 20 is connected to the second signal terminal 3.

[0028] The bandpass filter circuit of the electronic component 1 is composed of first to third circuit portions 10, 20, and 30. The bandpass filter circuit can be composed, for example, by connecting a highpass filter circuit and a lowpass filter circuit in series. One of the first circuit portion 10 and the second circuit portion 20 may be a highpass filter circuit. The other of the first circuit portion 10 and the second circuit portion 20 may be a lowpass filter circuit. Alternatively, at least one of the first circuit portion 10 and the second circuit portion 20 may be a circuit including a highpass filter circuit and a lowpass filter circuit.

[0029] The first circuit portion 10 and the second circuit portion 20 are configured by a plurality of elements provided in the first body 50. The plurality of elements includes a plurality of inductor elements and a plurality of capacitor elements. The plurality of inductor elements are configured by a plurality of conductors in the first body 50. The plurality of capacitor elements are configured by a plurality of conductors and a plurality of dielectrics in the first body 50. Each of the plurality of dielectrics is a part of a plurality of dielectric layers that make up the first body 50.

[0030] The third circuit portion 30 includes a first element provided in the first body 50 and a second element provided in the second body 80. The first element and the second element are connected via some of the plurality of electrodes 81 to 84 shown in FIG. 1 and some of the plurality of electrodes 121 to 124 shown in FIGS. 2 and 3 .

[0031] In this embodiment, the first element is a capacitor element, and the second element is an acoustic wave element. The capacitor element includes a plurality of conductors in a first body 50 and a dielectric. The dielectric interposed between the plurality of conductor layers is part of the plurality of dielectric layers that make up the first body 50. Hereinafter, the dielectric of the capacitor element (first element) will be referred to as the first dielectric. As the first dielectric, various ceramic materials, various glass ceramic materials used in low-temperature co-fired ceramics (LTCC), and mixtures thereof can be used.

[0032] An acoustic wave element includes a dielectric. Hereinafter, the dielectric of the acoustic wave element (second element) will be referred to as the second dielectric. The acoustic wave element may be a bulk acoustic wave element or a surface acoustic wave element. In a bulk acoustic wave element, the vibration of the second dielectric is utilized. In a surface acoustic wave element, the second dielectric is utilized as a substrate. As the second dielectric, a dielectric generally used in an acoustic wave element can be used.

[0033] Fig. 5 shows an example of the configuration of the third circuit portion 30. In Fig. 5, reference symbol C1 indicates a capacitor element, which is a first element, and reference symbol 31 indicates an acoustic wave element, which is a second element. In the example shown in Fig. 5, one end of the acoustic wave element 31 is connected to a first end 30a of the third circuit portion 30. The other end of the acoustic wave element 31 is connected to a second end 30b of the third circuit portion 30. The capacitor element C1 is connected in parallel to the acoustic wave element 31.

[0034] Next, an example of the structure of the capacitor element C1 will be described with reference to Fig. 6. Fig. 6 is a perspective view showing a part of the interior of the first body 50. In the example shown in Fig. 6, the capacitor element C1 is composed of conductor layers C1a, C1b, C1c, and C1d arranged at a predetermined interval in the stacking direction T, a first dielectric between the conductor layer C1a and the conductor layer C1b, a first dielectric between the conductor layer C1b and the conductor layer C1c, and a first dielectric between the conductor layer C1c and the conductor layer C1d.

[0035] Of the conductor layers C1a, C1b, C1c, and C1d, the conductor layer C1a is disposed closest to the second surface 50B (see FIGS. 2 and 3). Of the conductor layers C1a, C1b, C1c, and C1d, the conductor layer C1d is disposed closest to the first surface 50A (see FIGS. 2 and 3).

[0036] Conductor layer C1d is electrically connected to electrode 121 via a through hole. Conductor layer C1c is electrically connected to electrode 122 via another through hole. Although not shown, acoustic wave element 31 is electrically connected to electrodes 81 and 82. Therefore, capacitor element C1 is connected in parallel to acoustic wave element 31 via electrodes 81, 82, 121, and 122.

[0037] Although not shown, acoustic wave element 31 is disposed ahead of capacitor element C1 in the Z direction. No other element is disposed between capacitor element C1 and acoustic wave element 31.

[0038] 6 also shows the inductor element L1. The conductor layer C1c is connected to the conductor layer that constitutes the inductor element L1. In FIG. 6, the boundary between the conductor layer C1c and the conductor layer that constitutes the inductor element L1 is indicated by a dotted line. The inductor element L1 is electrically connected to the electrode 122. The inductor element L1 may be included in the first circuit portion 10 or the second circuit portion 20.

[0039] Next, the operation and effect of electronic component 1 according to this embodiment will be described. In this embodiment, first body 50 includes capacitor element C1 as a first element including a first dielectric. Second body 80 includes acoustic wave element 31 as a second element including a second dielectric. Electronic component 1 according to this embodiment includes a bandpass filter circuit including capacitor element C1 and acoustic wave element 31.

[0040] Dielectrics have characteristics that change depending on temperature. Therefore, a bandpass filter circuit configured with elements including a dielectric also has characteristics that change depending on temperature. FIG. 7 is a characteristics diagram showing an example of the pass attenuation characteristics of a bandpass filter circuit. In FIG. 7, the horizontal axis represents frequency, and the vertical axis represents attenuation. Also in FIG. 7, the curve labeled 91 represents the pass attenuation characteristics at 85°C, the curve labeled 92 represents the pass attenuation characteristics at 25°C, and the curve labeled 93 represents the pass attenuation characteristics at -20°C. As shown in FIG. 7, the pass attenuation characteristics of the bandpass filter circuit change depending on temperature.

[0041] Here, we focus on the resonant frequency of the dielectric material. The temperature coefficient of resonant frequency (TCF) is an index that indicates the temperature dependency of the resonant frequency of a dielectric material. The temperature coefficient of resonant frequency (TCF) (unit: ppm / K) is expressed by the following formula (1), as defined in JIS standard R1627 (Test method for dielectric properties of fine ceramics for microwave use). Note that f ｒｅｆ is the reference temperature t ｒｅｆ represents the resonant frequency at Ｔ represents the resonant frequency at a given temperature t.

[0042] TCF = [(f Ｔ -f ｒｅｆ ) / {f ｒｅｆ (t-t ｒｅｆ )] x 10 ６ …(1)

[0043] Generally, the temperature dependence of the pass attenuation characteristics of a bandpass filter circuit can be suppressed by using an element containing a dielectric with a small absolute value of the temperature coefficient of resonance frequency (TCF). However, depending on the element, it may be difficult to use a dielectric with a small absolute value of the temperature coefficient of resonance frequency (TCF). The absolute value of the temperature coefficient of resonance frequency (TCF) can be reduced by combining materials with different temperature coefficients of resonance frequency (TCF). However, constructing acoustic wave element 31 using a dielectric material that combines multiple materials increases the cost of acoustic wave element 31. Another problem is that it is difficult to achieve a combination of materials that satisfies the characteristics of acoustic wave element 31 and the characteristics of the bandpass filter circuit.

[0044] In contrast, in this embodiment, the first dielectric used in capacitor element C1 (first element) is made of a first dielectric material having a temperature coefficient of resonant frequency TCF of a first value, and the second dielectric used in acoustic wave element 31 (second element) is made of a second dielectric material having a temperature coefficient of resonant frequency TCF of a second value.

[0045] In this embodiment, the first and second dielectrics are selected so that the absolute value of the sum of the first and second values ​​or the absolute value of the average of the first and second values ​​is smaller than the absolute value of the second value. Therefore, according to this embodiment, even if it is difficult to reduce the absolute value of the temperature coefficient (TCF) of the resonant frequency of one of the first and second dielectrics, by selecting the other of the first and second dielectrics so as to satisfy the above-mentioned requirements, it is possible to suppress changes in the characteristics (resonant frequency) of the third circuit portion 30. As a result, according to this embodiment, it is possible to suppress changes in the pass attenuation characteristics of the band-pass filter circuit due to temperature.

[0046] For example, if one of the first value and the second value is negative, the absolute value of the sum of the first value and the second value can be made smaller than the absolute value of the second value by making the other of the first value and the second value positive. In one example, the first value is 40 ppm / K and the second value is −25 ppm / K.

[0047] Furthermore, when both the first value and the second value are negative, the absolute value of the average of the first value and the second value can be made smaller than the absolute value of the second value by making the absolute value of the first value smaller than the absolute value of the second value. In one example, the first value is −5 ppm / K and the second value is −25 ppm / K.

[0048] The sum of the first value and the second value and the average value of the first value and the second value may both be within the range of, for example, −75 to 40 ppm / K.

[0049] In the present embodiment, second body 80 including acoustic wave element 31 (second element) is mounted on first body 50. First body 50 is a laminate including multiple dielectric layers and multiple conductors. Generally, elements mounted on a laminate are more expensive and their characteristics are more difficult to adjust than elements configured using multiple dielectric layers and multiple conductors. According to the present embodiment, the first dielectric can suppress temperature-dependent changes in the pass attenuation characteristics of the bandpass filter circuit without changing the second dielectric of acoustic wave element 31. Furthermore, even if the second dielectric of acoustic wave element 31 is not changed, by selecting the first dielectric to satisfy the above-described requirements, changes in the pass attenuation characteristics of the bandpass filter circuit can be suppressed compared to bandpass filter circuits not including the first element and bandpass filter circuits in which the first element is configured using the second dielectric.

[0050] In this embodiment, capacitor element C1 is connected in parallel to acoustic wave element 31. Capacitor element C1 has the function of lowering the resonant frequency of third circuit portion 30. This function will be described below with reference to the results of a first simulation. In the first simulation, a model of third circuit portion 30 is used to determine the pass attenuation characteristics of third circuit portion 30 while varying the capacitance of capacitor element C1 within a range of 0 to 2 pF. In the first simulation, the Q value of the resonant frequency and the Q value of the antiresonant frequency of acoustic wave element 31 are each set to 300, and the electromechanical coupling coefficient of acoustic wave element 31 is set to 0.091.

[0051] 8 is a characteristic diagram showing the pass attenuation characteristics of the third circuit portion 30 obtained by the first simulation. In FIG. 8, the horizontal axis represents frequency, and the vertical axis represents attenuation. Also in FIG. 8, reference numeral 94 represents the pass attenuation characteristics when the capacitance of the capacitor element C1 is 0 pF, reference numeral 95 represents the pass attenuation characteristics when the capacitance of the capacitor element C1 is 0.1 pF, reference numeral 96 represents the pass attenuation characteristics when the capacitance of the capacitor element C1 is 0.3 pF, reference numeral 97 represents the pass attenuation characteristics when the capacitance of the capacitor element C1 is 0.6 pF, reference numeral 98 represents the pass attenuation characteristics when the capacitance of the capacitor element C1 is 1 pF, and reference numeral 99 represents the pass attenuation characteristics when the capacitance of the capacitor element C1 is 2 pF.

[0052] 8, the resonant frequency of the third circuit portion 30 decreases as the capacitance of the capacitor element C1 increases. According to this embodiment, the resonant frequency of the third circuit portion 30 can be adjusted by the capacitor element C1 while suppressing the change in the pass attenuation characteristics of the bandpass filter circuit due to temperature.

[0053] The characteristics of third circuit portion 30 can also be adjusted by acoustic wave element 31. A second simulation will be described below, in which the characteristics of third circuit portion 30 are examined when the characteristics of acoustic wave element 31 are changed. In the second simulation, a model of third circuit portion 30 is used to determine the pass attenuation and return loss characteristics of third circuit portion 30 for a first case in which the capacitance of capacitor element C1 is 2 pF, the Q value of the resonant frequency and the Q value of the anti-resonant frequency of acoustic wave element 31 are each 500, and the electromechanical coupling coefficient of acoustic wave element 31 is 0.13. In the second simulation, a model of third circuit portion 30 is used to determine the pass attenuation and return loss characteristics of third circuit portion 30 for a second case in which the capacitance of capacitor element C1 is 2 pF, the Q value of the resonant frequency and the Q value of the anti-resonant frequency of acoustic wave element 31 are each 300, and the electromechanical coupling coefficient of acoustic wave element 31 is 0.091.

[0054] FIG. 9 is a characteristic diagram showing the pass attenuation characteristics of third circuit portion 30 obtained by the second simulation. FIG. 10 is a characteristic diagram showing the return attenuation characteristics of third circuit portion 30 obtained by the second simulation. In FIGS. 9 and 10 , the horizontal axis represents frequency and the vertical axis represents attenuation. In addition, in FIGS. 9 and 10 , the solid curves represent the characteristics in the first case, and the dashed curves represent the characteristics in the second case. As can be seen from FIGS. 9 and 10 , the characteristics of third circuit portion 30 can also be adjusted by acoustic wave element 31.

[0055] As can be seen from the results of the first and second simulations, according to this embodiment, the characteristics of the third circuit portion 30 can be adjusted by the capacitor element C1 and the acoustic wave element 31 while suppressing changes in the pass attenuation characteristics of the bandpass filter circuit due to temperature.

[0056] Next, an example of the first dielectric material will be described. As the first dielectric material in which the first value is a positive value, for example, the composition formula is {α(xBaO.yNd ２ O ３ zTiO ２ )+β(2MgO・SiO ２ )} as a main component, where α>0, β>0, x>0, y>0, and z>0. The first value of the temperature coefficient of resonant frequency TCF is, for example, in the range of 1 to 1000 ppm / K.

[0057] The first dielectric material having a negative first value is, for example, a material having a composition formula of {γ(2MgO.SiO ２ )+δ((Ca,Sr)TiO ３ )} as a main component, where γ>0 and δ≧0. The first value of the temperature coefficient of resonant frequency TCF is, for example, in the range of −1000 to −1 ppm / K.

[0058] [Modification] Next, a modification of the electronic component 1 according to the present embodiment will be described with reference to Fig. 11. Fig. 11 is a circuit diagram showing a modification of the third circuit portion 30. In this modification, the third circuit portion 30 includes capacitor elements C11 and C12 connected in series instead of the capacitor element C1.

[0059] One end of the capacitor element C11 is connected to one end of the acoustic wave element 31. One end of the capacitor element C12 is connected to the other end of the capacitor element C11. The other end of the capacitor element C12 is connected to the other end of the acoustic wave element 31.

[0060] The first body 50 includes capacitor elements C11 and C12. One of the capacitor elements C11 and C12 corresponds to the "first element" of the present invention, and the other of the capacitor elements C11 and C12 corresponds to the "third element" of the present invention. Here, it is assumed that the capacitor element C11 corresponds to the "first element" and the capacitor element C12 corresponds to the "third element."

[0061] The capacitor element C11 includes a plurality of conductors in the first body 50 and a first dielectric. The capacitor element C12 includes another plurality of conductors in the first body 50 and a third dielectric. The first dielectric is a part of the plurality of dielectric layers that make up the first body 50. The third dielectric is another part of the plurality of dielectric layers that make up the first body 50. The relative dielectric constant of the third dielectric is smaller than the relative dielectric constant of the first dielectric.

[0062] The first dielectric used in the capacitor element C11 (first element) is made of a first dielectric material having a temperature coefficient of resonant frequency (TCF) of a first value, and the third dielectric used in the capacitor element C12 (third element) is made of a third dielectric material having a temperature coefficient of resonant frequency (TCF) of a third value. One of the first and third values ​​may be positive, and the other may be negative. The dielectric constant of the third dielectric may be smaller than that of the first dielectric.

[0063] Second Embodiment Next, a second embodiment of the present invention will be described with reference to Fig. 12. Fig. 12 is a block diagram conceptually showing the circuit configuration of an electronic component according to this embodiment.

[0064] Like the electronic component 1 according to the first embodiment, the electronic component 101 according to the present embodiment includes a first body 50 and a second body 80 (see FIGS. 1 to 3). Like the electronic component 1, the electronic component 101 also includes a first signal terminal 2, a second signal terminal 3, a first circuit portion 10, a second circuit portion 20, and a third circuit portion 30.

[0065] The electronic component 101 further includes, in its circuit configuration, a fourth circuit portion 40 provided between a signal path 105 connecting the first signal terminal 2 and the second signal terminal 3 and ground. The fourth circuit portion 40 includes a first end 40a and a second end 40b. The first end 40a of the fourth circuit portion 40 is connected to the signal path 105. In the example shown in FIG. 12 , the first end 40a of the fourth circuit portion 40 is connected to a portion of the signal path 105 between the second end 10b of the first circuit portion 10 and the first end 30a of the second circuit portion 20. The second end 40b of the fourth circuit portion 40 is connected to ground.

[0066] The electronic component 101 includes a band-pass filter circuit, similar to the electronic component 1 according to the first embodiment. The band-pass filter circuit of the electronic component 101 is made up of first to fourth circuit portions 10, 20, 30, and 40.

[0067] The fourth circuit portion 40 includes a first element provided in the first body 50 and a second element provided in the second body 80. The first element and the second element are connected via some of the plurality of electrodes 81 to 84 shown in FIG. 1 and some of the plurality of electrodes 121 to 124 shown in FIGS. 2 and 3 .

[0068] In particular, in this embodiment, the first element is a capacitor element, and the second element is an acoustic wave element. Fig. 13 shows an example of the configuration of the fourth circuit portion 40. In Fig. 13, reference numeral C101 denotes a capacitor element, which is the first element, and reference numeral 131 denotes an acoustic wave element, which is the second element. In the example shown in Fig. 13, one end of the acoustic wave element 131 is connected to the first end 40a of the fourth circuit portion 40. One end of the capacitor element C101 is connected to the other end of the acoustic wave element 131. The other end of the capacitor element C101 is connected to the second end 40b of the fourth circuit portion 40. The capacitor element C101 is connected in series to the acoustic wave element 131.

[0069] Capacitor element C101 includes multiple conductors in first body 50 and the first dielectric described in the first embodiment. Acoustic wave element 131 includes the second dielectric described in the first embodiment. According to this embodiment, for the same reasons as those described in the first embodiment, it is possible to suppress changes in the pass attenuation characteristics of the bandpass filter circuit due to temperature.

[0070] In this embodiment, capacitor element C101 is connected in series to acoustic wave element 131. Capacitor element C101 has the function of increasing the resonant frequency of the sub-circuit including fourth circuit portion 40. This function will be described below with reference to the results of the third simulation.

[0071] The third simulation used a sub-circuit model including a fourth circuit portion 40. The sub-circuit model includes a first signal port, a second signal port, a signal path connecting the first signal port and the second signal port, and a fourth circuit portion 40 provided between the connection path and ground. In the sub-circuit model, the fourth circuit portion 40 includes an acoustic wave element provided between the connection path and ground, and a capacitor provided between the connection path and the acoustic wave element.

[0072] In the third simulation, the above-described sub-circuit model was used to determine the pass attenuation characteristics of the sub-circuit while varying the capacitance of capacitor element C101 within a range of 0.3 to ∞ pF. The pass attenuation characteristics when capacitor element C101 has a capacitance of ∞ pF represent the pass attenuation characteristics when capacitor element C101 is not provided. In the third simulation, the Q value of the resonant frequency and the Q value of the antiresonant frequency of acoustic wave element 131 were each set to 300, and the electromechanical coupling coefficient of acoustic wave element 131 was set to 0.091.

[0073] 14 is a characteristic diagram showing the pass attenuation characteristics of the sub-circuit obtained by the third simulation. In FIG. 14, the horizontal axis represents frequency, and the vertical axis represents attenuation. Also in FIG. 14, reference numeral 191 represents the pass attenuation characteristics when the capacitance of capacitor element C101 is ∞ pF, reference numeral 192 represents the pass attenuation characteristics when the capacitance of capacitor element C101 is 10 pF, reference numeral 193 represents the pass attenuation characteristics when the capacitance of capacitor element C101 is 3 pF, reference numeral 194 represents the pass attenuation characteristics when the capacitance of capacitor element C101 is 1 pF, and reference numeral 195 represents the pass attenuation characteristics when the capacitance of capacitor element C101 is 0.3 pF.

[0074] 14, the resonant frequency of the sub-circuit increases as the capacitance of the capacitor element C101 decreases. According to this embodiment, the resonant frequency of the sub-circuit including the fourth circuit portion 40 can be adjusted by the capacitor element C101 while suppressing changes in the pass attenuation characteristics of the bandpass filter circuit due to temperature.

[0075] The characteristics of the sub-circuit can also be adjusted by acoustic wave element 131. A fourth simulation is described below, which examines the characteristics of the sub-circuit when the characteristics of acoustic wave element 131 are changed. In the fourth simulation, a sub-circuit model is used to determine the pass attenuation and return loss characteristics of the sub-circuit for a third case in which the capacitance of capacitor element C101 is 0.3 pF, the Q value of the resonant frequency and the Q value of the anti-resonant frequency of acoustic wave element 131 are each 500, and the electromechanical coupling coefficient of acoustic wave element 131 is 0.13. In the fourth simulation, a sub-circuit model is used to determine the pass attenuation and return loss characteristics of the sub-circuit for a fourth case in which the capacitance of capacitor element C101 is 0.3 pF, the Q value of the resonant frequency and the Q value of the anti-resonant frequency of acoustic wave element 131 are each 300, and the electromechanical coupling coefficient of acoustic wave element 131 is 0.091.

[0076] FIG. 15 is a characteristic diagram showing the pass attenuation characteristics of the sub-circuit obtained by the fourth simulation. FIG. 16 is a characteristic diagram showing the return attenuation characteristics of the sub-circuit obtained by the fourth simulation. In FIGS. 15 and 16, the horizontal axis represents frequency and the vertical axis represents attenuation. In addition, in FIGS. 15 and 16, the solid curves represent the characteristics in the third case, and the dashed curves represent the characteristics in the fourth case. As can be seen from FIGS. 15 and 16, the characteristics of the sub-circuit can also be adjusted by acoustic wave element 131.

[0077] As can be seen from the results of the third and fourth simulations, according to this embodiment, it is possible to adjust the characteristics of the sub-circuit including the fourth circuit portion 40 by using the capacitor element C101 and the acoustic wave element 131 while suppressing changes in the pass attenuation characteristics of the band-pass filter circuit due to temperature.

[0078] Other configurations, actions, and effects of this embodiment are the same as those of the first embodiment.

[0079] The present invention is not limited to the above-described embodiments and can be modified in various ways. For example, the electronic component of the present invention is not limited to a band-pass filter, but can be applied to other filters such as a low-pass filter or a high-pass filter, or to electronic components including multiple resonators, such as a branching filter that separates multiple signals of different frequency bands.

[0080] In the second embodiment, the third circuit portion 30 does not necessarily have to be provided.

[0081] As described above, the electronic component of the present invention includes a first body including a first element, a second body mounted on the first body and including a second element, and a circuit including the first element and the second element. The first element includes a first dielectric made of a first dielectric material having a temperature coefficient of resonant frequency of a first value. The second element includes a second dielectric made of a second dielectric material having a temperature coefficient of resonant frequency of a second value. The first and second dielectrics are selected so that the absolute value of the sum of the first and second values ​​or the absolute value of the average of the first and second values ​​is smaller than the absolute value of the second value.

[0082] In the electronic component of the present invention, one of the first value and the second value may be a positive value, and the other of the first value and the second value may be a negative value.

[0083] In the electronic component of the present invention, the first body may include a plurality of laminated dielectric layers.

[0084] In the electronic component of the present invention, the first element may be a capacitor element.

[0085] In the electronic component of the present invention, the second element may be an acoustic wave element.

[0086] In the electronic component of the present invention, the first element may be connected in parallel to the second element, or the first element may be connected in series to the second element.

[0087] In the electronic component of the present invention, the first body may further include a third element. The circuit may further include a third element. The third element may include a third dielectric made of a third dielectric material having a temperature coefficient of resonant frequency of a third value. One of the first value and the third value may be a positive value, and the other of the first value and the third value may be a negative value.

[0088] In the electronic component of the present invention, no element may be disposed between the first element and the second element.

[0089] In the electronic component of the present invention, the first dielectric may have a dielectric constant of 8 or more.

Claims

1. An electronic component comprising: a first body including a first element; a second body mounted on the first body and including a second element; and a circuit including the first element and the second element, wherein the first element includes a first dielectric made of a first dielectric material having a temperature coefficient of resonant frequency of a first value; and the second element includes a second dielectric made of a second dielectric material having a temperature coefficient of resonant frequency of a second value, and wherein the first dielectric and the second dielectric are selected so that the absolute value of the sum of the first value and the second value or the absolute value of the average of the first value and the second value is smaller than the absolute value of the second value.

2. The electronic component according to claim 1, wherein one of the first value and the second value is a positive value, and the other of the first value and the second value is a negative value.

3. The electronic component according to claim 1, wherein said first body comprises a plurality of laminated dielectric layers.

4. The electronic component according to claim 1, wherein the first element is a capacitor element.

5. The electronic component according to claim 1, wherein the second element is an acoustic wave element.

6. The electronic component according to claim 1, wherein the first element is connected in parallel to the second element.

7. The electronic component according to claim 1, wherein the first element is connected in series to the second element.

8. The electronic component according to claim 1, wherein the first body further includes a third element, the circuit further includes the third element, the third element includes a third dielectric made of a third dielectric material having a temperature coefficient of resonant frequency of a third value, one of the first value and the third value being a positive value, and the other of the first value and the third value being a negative value.

9. The electronic component according to claim 1, wherein no element is disposed between said first element and said second element.

10. An electronic component according to any one of claims 1 to 9, wherein the dielectric constant of the first dielectric is 8 or more.

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