Probe device and method for manufacturing same

Abstract

In order to provide a probe device with which it is possible to perform measurement and inspection in a reliable and inexpensive manner in compatibility with finer configurations and narrower pitches, the present invention comprises a probe device substrate, a first elastic material layer, a first wiring pattern, a second elastic material layer, a second wiring pattern, and a through-hole penetrating the second elastic material layer and connecting the first wiring pattern and the second wiring pattern corresponding to each other. A probe is formed on the second wiring pattern so as to project in a direction perpendicular to the upper surface of the second elastic material layer.

Description

Probe device and manufacturing method thereof

[0001] The present invention relates to a probe device that can be brought into contact with electrodes formed on the surface of a substrate to be inspected, thereby enabling electrical measurement and inspection of the substrate, and a method for manufacturing the same.

[0002] Flip-chip packages (semiconductor packages) using flip-chip technology have been developed. A flip-chip package includes a semiconductor chip and a package substrate on which the semiconductor chip is mounted. Numerous electrode pads are formed on the surface of the package substrate. Solder bumps are formed on each electrode pad. The solder bumps serve as connections to the semiconductor chip and are formed on the metal layer of the electrode pads by, for example, plating technology.

[0003] A probe device equipped with multiple probes is used to measure and inspect the electrical characteristics of such package substrates. The probe device is required to simultaneously contact multiple probes with solder bumps, even if the heights of the solder bumps vary. A conventional probe device is known in which mechanical structures biased by spring coils are arranged two-dimensionally so that the tips of the probes can move forward and backward (protruding and retracting) (see, for example, Patent Document 1). This conventional probe device measures the electrical characteristics of the substrate under test using a four-terminal inspection method. Other known probes include those with multiple cantilever structures fabricated using MEMS (Micro Electro Mechanical Systems) technology and arranged two-dimensionally.

[0004] Japanese Patent Application Laid-Open No. 2005-315775

[0005] In recent years, semiconductor chips have become increasingly highly integrated due to improvements in manufacturing process technology. Accordingly, the number of electrode pads with solder bumps formed on the surface of package substrates on which these semiconductor chips are mounted has increased, and the electrode pads have become finer and more spaced at narrower pitches. However, it is difficult to two-dimensionally integrate and arrange probes with mechanical structures including the above-mentioned spring coils or probes fabricated using MEMS technology on the surface of package substrates so as to face the increasingly finer and more spaced electrode pads.

[0006] The present invention has been made in view of the above problems, and aims to provide a probe device and a manufacturing method thereof that enable reliable measurement and inspection in response to miniaturization and narrow pitch.

[0007] In order to solve the above-mentioned problems, an aspect of the present invention is a probe device having a plurality of probes and for measuring and inspecting electrical characteristics, comprising: a probe device substrate; a first elastic material layer provided on the substrate surface of the probe device substrate; a plurality of first wiring patterns formed on the upper surface of the first elastic material layer and having first wiring pad portions arranged on the peripheral portion of the first elastic material layer, each corresponding to one of the probes; a second elastic material layer stacked on the first elastic material layer; second wiring patterns formed on the second elastic material layer and connected to each of the probes; and through holes that penetrate the second elastic material layer and connect the corresponding first wiring patterns and second wiring patterns to each other, wherein the probes are formed on the second wiring patterns so as to protrude in a direction perpendicular to the upper surface of the second elastic material layer.

[0008] In the above aspect, it is preferable that the multiple probes are arranged in a concentrated manner on the second elastic material layer, the through holes are arranged at intervals longer than the intervals between the probes, and the second wiring patterns are formed so that the intervals between them increase toward the corresponding through holes.

[0009] In the above aspect, it is preferable that the second elastic material layer is formed using photosensitive polyimide.

[0010] In the above aspect, the probe is preferably formed of nickel or a nickel-cobalt alloy.

[0011] In the above aspect, the probe device substrate is preferably made of glass.

[0012] In the above aspect, it is preferable that the probe is provided on an electrode pad portion of the second wiring pattern.

[0013] In the above aspect, it is preferable that a socket or a flexible circuit board is connected to the first wiring pad portion.

[0014] In the above aspect, it is preferable that a seed layer is formed under the second wiring pattern.

[0015] In the above aspect, it is preferable that a protective film is formed on the upper surface of the second elastic material layer, and the probes penetrate the protective film and protrude.

[0016] Another aspect of the present invention is a method for manufacturing a probe device, comprising the steps of: depositing a first elastic material layer on a substrate surface of a probe device substrate; forming a plurality of first wiring patterns on the first elastic material layer, each having a first wiring pad portion arranged on a peripheral portion of the first elastic material layer; stacking a second elastic material layer on the first elastic material layer; forming a plurality of through holes in the second elastic material layer, each connected to the first wiring pattern; a second wiring pattern forming step of forming a plurality of second wiring patterns on the second elastic material layer, each connected to the through holes; and a probe forming step of forming a plurality of probes on the electrode pad portions of each of the second wiring patterns by electroforming, the probes protruding in a direction perpendicular to the upper surface of the second elastic material layer.

[0017] In the above aspect, it is preferable that the plurality of probes are arranged so as to be concentrated on the second elastic material layer, the through holes are arranged at intervals longer than the intervals between the probes, and the second wiring patterns are formed so that the intervals between them increase toward the corresponding through holes.

[0018] In the above aspect, it is preferable that the second elastic material layer is formed using photosensitive polyimide.

[0019] In the above aspect, the probe is preferably formed of nickel or a nickel-cobalt alloy.

[0020] In the above aspect, the probe device substrate is preferably made of glass.

[0021] In the above aspect, it is preferable that a socket or a flexible circuit board is connected to the first wiring pad portion.

[0022] The above aspect preferably includes a step of forming a seed layer on a base of the second wiring pattern, and in the second wiring pattern forming step, an exposure opening that exposes the seed layer is formed in the center of the electrode pad portion in the second wiring pattern, and in the probe forming step, the probe is electroformed so as to protrude from the seed layer through the exposure opening and protrude from the exposure opening toward above the electrode pad portion.

[0023] In the above aspect, it is preferable that a protective film covers the entire upper surface of the second elastic material layer, and the probes penetrate the protective film and protrude.

[0024] The probe device and the manufacturing method thereof according to the present invention have the effect of enabling reliable measurement and inspection in response to miniaturization and narrow pitch.

[0025] FIG. 1 is a plan view showing a schematic configuration of a probe device according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view showing a schematic configuration of the probe device according to the first embodiment of the present invention. FIG. 3 is a partially cutaway perspective view showing a main portion of the probe device according to the first embodiment of the present invention. FIG. 4-1 is a cross-sectional view showing a process of forming a first elastic material layer in a manufacturing method of a probe device according to the first embodiment of the present invention. FIG. 4-2 is a cross-sectional view showing a process of forming a first wiring layer in a manufacturing method of a probe device according to the first embodiment of the present invention. FIG. 4-3 is a cross-sectional view showing a process of forming a first wiring pattern in a manufacturing method of a probe device according to the first embodiment of the present invention. FIG. 5-1 is a cross-sectional view showing a process of performing pattern exposure of connection openings on a second elastic material layer in a manufacturing method of a probe device according to the first embodiment of the present invention. FIG. 5-2 is a cross-sectional view showing a process of forming connection openings in a manufacturing method of a probe device according to the first embodiment of the present invention. FIG. 6-1 is a cross-sectional view showing a process of forming a through-hole in a manufacturing method of a probe device according to the first embodiment of the present invention. FIG. 6-2 is a cross-sectional view showing a process of exposure to form a resist pattern for forming a second wiring pattern in a manufacturing method of a probe device according to the first embodiment of the present invention. FIG. 7-1 is a process cross-sectional view showing a state in which a resist pattern for forming a second wiring pattern has been developed in the method for manufacturing a probe device according to the first embodiment of the present invention. FIG. 7-2 is a process cross-sectional view showing a process of forming a second wiring pattern in the method for manufacturing a probe device according to the first embodiment of the present invention. FIG. 8-1 is a process cross-sectional view showing a probe formation process in the method for manufacturing a probe device according to the first embodiment of the present invention. FIG. 8-2 is a process cross-sectional view showing a probe formation process (second electroforming process) in the method for manufacturing a probe device according to the first embodiment of the present invention. FIG. 9-1 is a process cross-sectional view showing a process of removing photoresist and etching a seed layer in the method for manufacturing a probe device according to the first embodiment of the present invention. FIG. 9-2 is a process cross-sectional view showing a protective film formation process in the method for manufacturing a probe device according to the first embodiment of the present invention.10 and 11 are plan and cross-sectional views showing the schematic configuration of a probe apparatus according to a second embodiment of the present invention.

[0026] The following describes in detail a probe device and a manufacturing method thereof according to an embodiment of the present invention with reference to the drawings. However, it should be noted that the drawings are schematic and the number of components, dimensions, dimensional ratios, shapes, etc. of each component may differ from the actual components. Furthermore, the drawings may include portions with different dimensional relationships, ratios, and shapes.

[0027] In this embodiment, the substrate to be inspected can be a variety of substrates, such as a package substrate with a large number of bumps on the front or back surface, a printed wiring board, a flexible board, a multilayer wiring board, an electrode plate for a liquid crystal display or an organic EL display, a film carrier, etc. The probe device according to this embodiment can also be used to measure the electrical characteristics of semiconductor elements called wafers or LSI chips.

[0028] [First embodiment]

[0029] (General Configuration of Probe Apparatus) The configuration, operation, and effects of a probe apparatus 20 according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG.

[0030] As shown in Figures 1 to 3, the probe device 20 of this embodiment includes a probe device substrate 1, a first elastic material layer 2, a first wiring pattern 3A, a second elastic material layer 4, a second wiring pattern 10, a through hole 6 penetrating the second elastic material layer 4, and a plurality of probes 12 arranged in a concentrated manner in the center of the second elastic material layer 4.

[0031] The probe device substrate 1 is made of a rectangular glass plate and has a thickness of, for example, 500 μm. The size of the probe device substrate 1 is set appropriately depending on the size of the substrate to be measured (not shown), the number of bumps, the arrangement structure of the bumps, etc.

[0032] The first elastic material layer 2 is made of polyimide having cushioning properties, flexibility, etc., and is laminated over the entire surface of one of the substrate surfaces of the probe device substrate 1. That is, the first elastic material layer 2 is also formed in a rectangular shape, similar to the probe device substrate 1. The thickness of the first elastic material layer 2 can be set to, for example, 3.0 to 50.0 μm, but is not limited to this. In this embodiment, the thickness of the first elastic material layer 2 is set to 5 μm.

[0033] As shown in FIG. 2 , a plurality of first wiring patterns 3A are formed on the upper surface (lower surface in FIG. 2 ) of the first elastic material layer 2. These first wiring patterns 3A are made of copper (Cu) and have a film thickness of, for example, 6 μm. As shown in FIG. 1 , the first wiring patterns 3A extend along the X direction and are arranged substantially parallel to each other at intervals near the peripheral edge of one side of the first elastic material layer 2. As shown in FIG. 1 , first wiring pad portions 3B having a planar rectangular shape are formed at the ends of these first wiring patterns 3A located on the peripheral edge side in the X direction. In this embodiment, the first wiring pad portions 3B are arranged alternately in the X direction along the Y direction, and the first wiring pad portions 3B arranged in two rows in the Y direction are arranged. Therefore, the spacing between the first wiring pad portions 3B in each row along the Y direction is set to be large. Note that in this embodiment, the number of rows of the first wiring pad portions 3B is set to two rows, but the number of rows may be set appropriately depending on the number of first wiring patterns 3A (the number of probes 12).

[0034] 2, in this embodiment, the second elastic material layer 4 is laminated on the upper surface side (lower surface side in FIG. 2) of the first elastic material layer 2 in a small region that fits within the outline of the first elastic material layer 2. The length of the Y-direction side of the second elastic material layer 4 is set to a dimension close to the length of the Y-direction side of the first elastic material layer 2. As shown in FIGS. 1 and 2, the end of the first wiring pattern 3A opposite to the first wiring pad portion 3B provided on the peripheral edge side of the first elastic material layer 2 extends to a position that fits within the outline of the second elastic material layer 4.

[0035] In this embodiment, the second elastic material layer 4 is made of photosensitive polyimide and has a film thickness of, for example, 10 μm. As shown in Fig. 1, the above-mentioned multiple through holes 6 are arranged along the Y direction near the periphery of the second elastic material layer 4 (the underlying layer of the protective film 13), close to the region in the first elastic material layer 2 where the first wiring pad portions 3B are arranged. The intervals between the through holes 6 are set to be larger than the intervals between the probes 12, which will be described later.

[0036] The through-holes 6 are formed by electroless plating and Cu plating in the connection openings 4A (see Figure 5-2) that are formed by irradiating the second elastic material layer 4 with light through a photomask with a predetermined pattern and developing it so that the irradiated areas are removed.

[0037] On the upper surface (lower surface in FIG. 2 ) of the second elastic material layer 4, second wiring patterns 10 are formed with a seed layer 7 as an underlying layer. As shown in FIGS. 1 and 3 , one end of each second wiring pattern 10 (including the seed layer 7) is connected to the upper end surface of the through hole 6. The multiple second wiring patterns 10 are routed so that electrode pad portions 10A formed at each end are converged in a matrix at the center of the second elastic material layer 4.

[0038] 2 and 3, the electrode pad portion 10A is provided with a probe 12 protruding in a direction perpendicular to the second elastic material layer 4. Nickel or a nickel-cobalt alloy can be used for the probe 12, and in this embodiment, a nickel-cobalt alloy is used. Specifically, as shown in FIG. 9-1, the probe 12 is formed by electroforming so that it grows from the seed layer 7 exposed in the center of the electrode pad portion 10A through the exposed opening 11B.

[0039] The through holes 6 are arranged at intervals longer than the intervals between the probes 12, and the second wiring patterns 10 are formed so that the intervals between them increase toward the corresponding through holes 6.

[0040] A protective film 13 is formed on the second elastic material layer 4 on which the probes 12 are provided. The protective film 13 is preferably made of a resist or a photosensitive polyimide. In this embodiment, the thickness of the protective film 13 is set to, for example, 20 μm, but is not limited to this. The probes 12 protrude from the protective film 13.

[0041] 1 and 2, in this embodiment, a flexible circuit board 14 is connected to the peripheral edge of the first elastic material layer 2 where the first wiring pad portions 3B are formed. As shown in FIG. 2, the flexible circuit board 14 has connection pad portions 14A, which connect to the first wiring pad portions 3B, formed on the surface at one end, and connection pad portions 14B, which are provided on the back surface at the other end. These connection pad portions 14B can be used for connection to a tester or the like. Note that although the flexible circuit board 14 is used in this embodiment, a socket can also be used instead.

[0042] In addition, in this embodiment, polyimide is used for the first elastic material layer 2 and the second elastic material layer 4, but other materials may be used, such as polyamide, polyester, polyethylene, polyvinyl alcohol, polypropylene, polycarbonate, and polystyrene.

[0043] In this embodiment, photosensitive polyimide is used as the second elastic material layer 4, but it is also possible to use non-photosensitive polyimide and open the connection opening 4A for the through hole 6 by processing it with laser irradiation.

[0044] [Functions and Effects of the Present Embodiment] In the present embodiment, the plurality of probes 12 arranged in a matrix are set at short intervals according to the intervals between the bumps on the substrate to be inspected, etc. However, the second wiring patterns 10 connected to the respective probes 12 can be routed toward the upper end faces of the through holes 6 set at longer intervals, so that even with miniaturized and narrow-pitch probes 12, reliable measurement and inspection can be performed.

[0045] As described above, in the probe device 20 according to this embodiment, even if the probes 12 are miniaturized and have a narrow pitch, it is possible to set a wide distance between the first wiring patterns 3A, which has the effect of avoiding wiring connection errors.

[0046] In this embodiment, the second elastic material layer 4 is laminated on the first elastic material layer 2, and the probes 12 are further configured to protrude from the second elastic material layer 4. Therefore, when a flexible circuit board 14 or a socket is connected, the flexible circuit board 14 or the socket does not protrude toward the probes 12, thereby improving the degree of freedom in wiring connection.

[0047] In this embodiment, the laminated structure of the first elastic material layer 2 and the second elastic material layer 4 provides cushioning that absorbs the reaction force from the substrate to be measured when the probes 12 are brought into contact with the substrate to be measured, which not only improves the degree of freedom in wiring connection but also has the effect of preventing damage to the probes 12 and the substrate to be measured. Therefore, according to this embodiment, there is no need to use a probe having a mechanical structure biased by a spring coil as in the conventional case, and the stability and precision of the inspection can be improved.

[0048] In other words, in this embodiment, if there is variation in the height between multiple bumps on the substrate to be inspected, the first elastic material layer 2 and the second elastic material layer 4 can absorb the variation, thereby enabling high measurement accuracy and stable measurements.

[0049] In this embodiment, the through-holes 6 are formed by electroless plating and Cu plating, which improves the adhesion of the through-holes 6 to the second elastic material layer 4. Therefore, according to this embodiment, electrical stability can be ensured.

[0050] (Method of Manufacturing Probe Device) Hereinafter, a method of manufacturing the probe device 20 according to this embodiment will be described with reference to FIGS. 4A to 9B.

[0051] (First Elastic Material Layer Forming Process) First, as shown in FIG. 4A, the first elastic material layer 2 made of polyimide is applied onto the probe device substrate 1 so as to have a film thickness of, for example, 3.0 to 50 μm.

[0052] (First Wiring Pattern Forming Process) Next, patterning is performed using a photoresist (not shown), and the patterned photoresist is used to electroform a first wiring pattern 3A as shown in FIG. 4-3. Note that this first wiring pattern forming process may involve forming a first wiring layer 3 made of Cu on the first elastic material layer 2 as shown in FIG. 4-2, and then using a photoresist (not shown) to perform a well-known photolithography technique to form the first wiring pattern 3A as shown in FIG. 4-3. In this first wiring pattern 3A forming process, the first elastic material layer 2 is patterned so that first wiring pad portions 3B as shown in FIG. 1 are disposed on the periphery thereof.

[0053] 5A, the second elastic material layer 4 is applied to the first elastic material layer 2 on which the first wiring pattern 3A is formed, so as to have a thickness of, for example, 10 μm. Photosensitive polyimide is used as the second elastic material layer 4.

[0054] (Through-hole forming process) Then, as shown in Fig. 5-1, a photomask 5 is used to perform exposure to form connection openings 4A that fill the through-holes 6. Because the second elastic material layer 4 is photosensitive, the exposed portions are removed by development to form the connection openings 4A, as shown in Fig. 5-2. Note that the connection openings 4A form the through-holes 6, so the underlying first wiring pattern 3A is exposed.

[0055] Next, as shown in FIG. 6A, electroless plating and Cu plating are performed to form through-holes 6 in the connection openings 4A.

[0056] 6-2, a seed layer 7 made of a nickel-cobalt alloy is formed by electroless plating on the second elastic material layer 4 in which the through holes 6 are formed. Note that the seed layer 7 may be formed by electroless plating of nickel (Ni). In addition to electroless plating, the seed layer 7 may also be formed by sputtering, vapor deposition, or the like.

[0057] Thereafter, a positive photoresist 8 is applied onto the seed layer 7, pre-baked, and exposed using a photomask 9. Although a positive photoresist 8 is used in this embodiment, a negative photoresist can also be used. In the above exposure, a pattern may be dynamically created by direct writing exposure using a DMD (Digital Micromirror Device) or the like, without using the photomask 9.

[0058] Next, as shown in Fig. 7-1, development is performed to form a remaining portion 8A of the photoresist 8. Note that the portion where the remaining portion 8A is not formed becomes an exposed portion 8B. Next, as shown in Fig. 7-2, electroforming is performed to form a second wiring pattern 10 including an electrode pad portion 10A, and the remaining portion 8A is removed.

[0059] (Probe Formation Process) Next, as shown in FIG. 8-1, photoresist 11 is applied, and then the photoresist 11 is exposed using a predetermined photomask and then developed. As a result, a remaining portion 11A and an exposure opening 11B that exposes the seed layer 7 are formed in the photoresist 11. As shown in FIG. 8-2, a nickel-cobalt alloy is grown by electroforming to form a plurality of probes 12 that protrude in a direction perpendicular to the upper surface of the second elastic material layer 4 on the electrode pad portion 10A of each second wiring pattern 10. Thereafter, as shown in FIG. 9-1, the photoresist 11 is removed.

[0060] In this embodiment, the plurality of probes 12 are patterned so as to be concentrated on the center of the second elastic material layer 4, and the through holes 6 are spaced apart at intervals longer than the intervals between the probes 12. The second wiring patterns 10 are patterned so that the intervals between them increase toward the corresponding through holes 6.

[0061] 9-2, a protective film 13 made of resist or photosensitive polyimide is formed by a well-known method. The protective film 13 can be formed by forming a nitride film, an oxide film, a spin-on-glass (SOG) film, a diamond-like carbon (DLC) film, or the like by a CVD method, and then etching back the film to expose the probes 12.

[0062] In the manufacturing method of the probe device 20 described above, the probe device 20 is formed by forming the first elastic material layer 2 on the probe device substrate 1, laminating the second elastic material layer 4 thereon, and then forming the probes 12 from the second elastic material layer 4. However, the probe device 20 can also be manufactured by a different method. Specifically, holes having the same shape as the probes 12 are formed on a silicon substrate by etching, and the probes 12 are then formed on the holes by plating. Furthermore, the probe device 20 can also be manufactured by forming the second elastic material layer 4 and the first elastic material layer 2 in this order, and then bonding the probe device substrate 1 to them. However, compared to the manufacturing method described in this embodiment, this method requires more complicated processes, such as etching the silicon substrate, and therefore the manufacturing method of this embodiment is more preferable.

[0063] 10 and 11 show a schematic configuration of a probe apparatus 20A according to a second embodiment of the present invention. The probe apparatus 20A according to this embodiment has a configuration in which the number of probes 12 is increased in the probe apparatus 20 according to the first embodiment described above, and four flexible circuit boards 14 are connected. In the configuration of this embodiment, differences from the probe apparatus 20 according to the first embodiment described above will be described below, and descriptions of similar configurations will be omitted.

[0064] In this embodiment, a first elastic material layer 2 is formed on the substrate surface of a probe device substrate 1, and two rows of first wiring pad portions 3B extending in the X direction or the Y direction are formed near each of the four sides of the first elastic material layer 2. As shown in Figures 10 and 11, the first wiring patterns 3A extending from the first wiring pad portions 3B in each row extend substantially parallel to each other into the region of the second elastic material layer 4. The second elastic material layer 4 and the protective film 13 are disposed in the central region of the first elastic material layer 2.

[0065] Furthermore, through holes 6 are provided near each of the four sides of the second elastic material layer 4, arranged along the X direction or the Y direction. A large number of probes 12 are arranged in a concentrated manner in the center of the second elastic material layer 4. A second wiring pattern 10 is formed from each probe 12 toward the corresponding through hole 6. These multiple second wiring patterns 10 are patterned so as to be spaced apart from each other toward the through hole 6 so as not to interfere with each other.

[0066] In this embodiment, even when there are a large number of probes 12, the second wiring patterns 10 can be formed distributed toward the four sides on the upper surface of the second elastic material layer 4. Furthermore, the second wiring patterns 10 are connected to the corresponding first wiring patterns 3A via the corresponding through holes 6. This allows the distance between the first wiring pad portions 3B of the first wiring patterns 3A to be increased. Therefore, the probing device 20A according to this embodiment can accommodate miniaturization and narrower pitches of the probes 12, and does not require the use of a conventional probe having a mechanical structure biased by a spring coil, thereby improving the stability and precision of the inspection.

[0067] [Other Embodiments] The first and second embodiments of the present invention have been described above, but the descriptions and drawings that form part of the disclosure of the embodiments should not be understood to limit the present invention. Various alternative embodiments, examples, and operating techniques will become apparent to those skilled in the art from this disclosure.

[0068] For example, in the above embodiment, the flexible circuit board 14 is configured to be connected at the peripheral edge of one or four sides, but the flexible circuit board 14 or other connecting means may also be connected to the peripheral edge of two or three sides.

[0069] REFERENCE SIGNS LIST 1 probe device substrate 2 first elastic material layer 3 first wiring layer 3A first wiring pattern 3B first wiring pad portion 4 second elastic material layer 4A connection opening 5 photomask 6 through hole 7 seed layer 8 photoresist 8A remaining portion 8B exposed portion 9 photomask 10 second wiring pattern 10A electrode pad portion 10B second wiring connection pad portion 11 photoresist 11A remaining portion 11B exposed opening 12 probe 13 protective film 14 flexible circuit board 14A, 14B connection pad portion 20, 20A probe device

Claims

1. A probe device having a plurality of probes for measuring and inspecting electrical characteristics, comprising: a probe device substrate; a first elastic material layer provided on the substrate surface of the probe device substrate; a plurality of first wiring patterns formed on the upper surface of the first elastic material layer, having first wiring pad portions arranged on the periphery of the first elastic material layer, and corresponding to each of the probes; a second elastic material layer laminated on the first elastic material layer; second wiring patterns formed on the second elastic material layer and connected to each of the probes; and through holes that penetrate the second elastic material layer and connect the corresponding first wiring patterns and second wiring patterns, wherein the probes are formed on the second wiring patterns so as to protrude in a direction perpendicular to the upper surface of the second elastic material layer.

2. A probe device as described in claim 1, wherein the plurality of probes are arranged in a concentrated manner on the second elastic material layer, the through holes are arranged at intervals longer than the intervals between the probes, and the second wiring patterns are formed so that the intervals between them increase toward the corresponding through holes.

3. The probe device according to claim 1, wherein the second elastic material layer is formed using photosensitive polyimide.

4. The probe device according to claim 1, wherein the probe is made of nickel or a nickel-cobalt alloy.

5. The probe device according to claim 1, wherein the probe device substrate is made of glass.

6. The probe device according to claim 1, wherein the probe is provided on an electrode pad portion of the second wiring pattern.

7. The probe device according to claim 1, wherein a socket or a flexible circuit board is connected to the first wiring pad portion.

8. The probe device according to claim 1, wherein a seed layer is formed under the second wiring pattern.

9. The probe device according to claim 1, wherein a protective film is formed on the upper surface of the second elastic material layer, and the probes protrude through the protective film.

10. A method for manufacturing a probe device, comprising: a step of depositing a first elastic material layer on a substrate surface of a probe device substrate; a step of forming, on the first elastic material layer, a plurality of first wiring patterns each having first wiring pad portions arranged on the periphery of the first elastic material layer; a step of laminating a second elastic material layer on the first elastic material layer; a step of forming, in the second elastic material layer, a plurality of through holes each connected to the first wiring pattern; a second wiring pattern forming step of forming, on the second elastic material layer, a plurality of second wiring patterns each connected to the through holes; and a probe forming step of forming, by electroforming, a plurality of probes on the electrode pad portions of each of the second wiring patterns, the probes protruding in a direction perpendicular to the upper surface of the second elastic material layer.

11. A method for manufacturing a probe device as described in claim 10, wherein a plurality of the probes are arranged so as to be concentrated on the second elastic material layer, the through holes are arranged at intervals longer than the intervals between the probes, and the second wiring patterns are formed so that the intervals between them increase toward the corresponding through holes.

12. The method for manufacturing a probe device according to claim 10, wherein the second elastic material layer is formed using photosensitive polyimide.

13. The method for manufacturing a probe device according to claim 10, wherein the probe is made of nickel or a nickel-cobalt alloy.

14. The method for manufacturing a probe device according to claim 10, wherein the probe device substrate is made of glass.

15. The method for manufacturing a probe device according to claim 10, wherein a socket or a flexible circuit board is connected to the first wiring pad portion.

16. A method for manufacturing a probe device as described in claim 10, further comprising a step of forming a seed layer on a base of the second wiring pattern, wherein in the second wiring pattern forming step, an exposure opening is formed in the center of the electrode pad portion in the second wiring pattern to expose the seed layer, and in the probe forming step, the probe is electroformed so that it protrudes from the seed layer through the exposure opening.

17. The method for manufacturing a probe device according to claim 10, wherein the upper surface of the second elastic material layer is covered with a protective film, and the probes protrude through the protective film.

Images