Micro- and nano-perovskite light emitting diodes, transistor-driven micro- and nano-perovskite light emitting diodes, and preparation methods therefor

Abstract

Disclosed in the present invention are micro- and nano-perovskite light-emitting diodes, transistor-driven micro- and nano-perovskite light-emitting diodes, and preparation methods therefor. In the present invention, the micro- and nano-perovskite light-emitting diodes are prepared by means of a perovskite material which has low cost and is simple to prepare; the obtained micro-perovskite light-emitting diode, with a size ranging from hundreds of micrometers to several micrometers or smaller, shows a very weak size effect, specifically, as the size decreases, the efficiency reduction of the micro-perovskite light-emitting diode is negligible, and the micro-perovskite light-emitting diode can maintain a high external quantum efficiency comparable to that of conventional millimeter-scale devices. In addition, the present invention implements the nano-perovskite light-emitting diode with the smallest pixel size at present, with the pixel side length or diameter reaching 100 nanometers or less. The pixel density per inch of a nano-perovskite light-emitting diode array implemented on the basis of the present invention can reach 127,000 PPI or above. The micro- and nano-perovskite light-emitting diodes in the present invention are compatible with both passive and active driving technical schemes.

Description

Micro- and nano-perovskite light-emitting diodes and transistor-driven micro- and nano-perovskite light-emitting diodes and preparation methods thereof Technical Field

[0001] The present invention discloses a micro perovskite light emitting diode (Micro-PeLED) and a nano perovskite light emitting diode (Nano-PeLED), as well as a high pixel density light emitting array composed of the above devices, belonging to the field of micro-nano optoelectronic devices. Background Art

[0002] As integrated displays and silicon-based chips progress toward miniaturization and low power consumption, light sources, as a crucial component of integrated devices, are also evolving toward smaller size, higher performance, and lower power consumption. Mini- and micro-LEDs (Mini-LEDs and Micro-LEDs) have attracted widespread attention due to their advantages, including low power consumption, high contrast, high brightness, fast response speed, and high efficiency. They have the potential to play a key role in new integrated light source devices and silicon-based chips. Currently, the active layer materials of mini- and micro-LEDs are mostly inorganic or organic semiconductors, often fabricated using a top-down approach. This involves multiple chemical and physical etching steps, which damages the sidewalls during fabrication and creates numerous non-radiative loss channels. When individual pixel sizes are reduced to approximately 10 microns or below, significant efficiency roll-off occurs. Furthermore, the light-emitting layer materials of micro-inorganic LEDs are mostly based on semiconductor materials such as GaN and AlGaN. Light color is typically adjusted by adjusting the element ratio, which can lead to lattice mismatch issues. This leads to significant efficiency roll-off in the green and red wavelengths, accompanied by spectral broadening and reduced color purity.

[0003] In recent years, metal halide light-emitting diodes (PELEDs) have shown potential as next-generation light sources due to their excellent bandgap tunability, high radiative efficiency, and simple fabrication. Since the first demonstration of room-temperature electroluminescent perovskite diodes in 2014, the technology for fabricating high-efficiency halide perovskite light-emitting diodes (PeLEDs) has matured, and researchers have recently successfully fabricated diodes with external quantum efficiencies exceeding 20%. Device operational stability has also been significantly improved. Currently, millimeter-sized perovskite LEDs rival inorganic and commercially available organic light-emitting diodes in terms of color purity, high brightness, and high efficiency. Strictly speaking, metal halide perovskites exhibit the properties of organic materials in their precursors and those of inorganic materials after forming perovskite thin films. Consequently, their performance surpasses that of some organic semiconductors and rivals that of high-performance inorganic semiconductors.

[0004] Perovskite LEDs have the potential to become a low-cost alternative to light-emitting diodes, but the construction of high-performance micron- and nanometer-sized perovskite LEDs remains elusive, and further development of micro perovskite LED arrays also presents challenges. This is because the top-down dry and wet etching methods used in traditional micro-LED fabrication techniques are not suitable for perovskite materials. The polar solvents used in wet etching can erode, dissolve, or damage the perovskite morphology, while the high-energy particles used in dry etching can bombard the perovskite material with weaker lattice energy, causing damage or even destruction to the surface of the perovskite material. This can lead to serious non-radiative recombination channels, ultimately resulting in a decline in device performance.

[0005] The present invention discloses a micro perovskite light-emitting diode (Micro perovskite light-emitting diode, referred to as Micro-PeLED) and a nano perovskite light-emitting diode (Nano perovskite light-emitting diode, referred to as Nano-PeLED). The present invention provides an alternative technology to III-V Micro-LED, using low-cost, easily prepared perovskite materials to prepare micro and nano perovskite light-emitting diodes, and the obtained micro perovskite light-emitting diodes with a size of 100 microns to several microns show a very weak size effect, and the efficiency of the micro perovskite light-emitting diode does not decrease significantly as the size decreases, and it can maintain an external quantum efficiency of 20% similar to that of a millimeter-sized device. In addition, the present invention can prepare a nano perovskite light-emitting diode with a pixel side length or diameter reduced to less than 1 micron, realizing a nano perovskite light-emitting diode with the smallest pixel point at present, with a pixel side length or diameter of 100 nanometers and less. The array pixel density (Pixels Per Inch, PPI) based on the nano perovskite light-emitting diode can range from 25400 PPI to 127000 PPI, and the optimized pixel density can reach more than 127000 PPI. The present invention also provides passive and active driving technology solutions based on micro and nano perovskite light-emitting diodes. This technology solution can also be expanded to apply to linear / area array photodetectors, imaging systems, ultra-high pixel displays, and silicon-based integrated devices made of perovskite materials. A known technology related to the present invention is disclosed in "Photoelectric device and manufacturing method thereof (Patent No.: ZL 2021 1 0392494.2)" and "Mini / Micro perovskite light-emitting diode and manufacturing method thereof (Patent No. US 11,818,941 B2)". Summary of the Invention

[0006] The known technologies have the following shortcomings: Currently, millimeter-sized perovskite light-emitting diodes are comparable to inorganic and organic light-emitting diodes in terms of color purity, high brightness, and high efficiency. Micro-light-emitting diodes, as new light sources, play a more important role in high-pixel displays and integrated devices. However, when the characteristic size of traditional light-emitting diodes is reduced to below 10 microns, the efficiency of traditional light-emitting diodes experiences a serious roll-off. This is because the top-down dry and wet etching methods used in traditional micro-light-emitting diode preparation technologies are not suitable for perovskite materials. The polar solvents used in wet etching will erode, dissolve, or damage the perovskite morphology, while the high-energy particles in dry etching will bombard the perovskite material with weaker lattice energy, causing damage or even destruction to the surface of the perovskite material. This will cause serious non-radiative recombination channels, ultimately leading to a decline in device performance. In order to apply high-performance devices made of perovskite materials and improve integration, it is necessary to develop targeted miniaturization solutions for perovskite materials.

[0007] Perovskite semiconductor precursors exist in solution or powder form. After annealing or an in-situ reaction, they form high-performance semiconductors. High-performance perovskite light-emitting materials typically have grains on the nanometer scale, while high-performance perovskite photovoltaic materials have grains smaller than a few microns. This means that reducing device size to micrometer or even nanometer scales while maintaining intact grain morphology theoretically does not compromise optoelectronic device performance. Other factors that influence device performance include electrode design, substrate flatness, sidewall flatness, and incidental non-radiative recombination channels at semiconductor grain boundaries. By leveraging the in-situ growth capability of perovskite semiconductor materials, a micrometer or nanometer pattern can be pre-designed. The perovskite material then grows into grains of a specified size within the designed micrometer or nanometer pattern. This allows the size of individual device pixels to be reduced to the micrometer and nanometer range without compromising semiconductor material performance.

[0008] The present invention utilizes the characteristic that perovskite semiconductor materials can be grown in situ, and adopts micron and nanometer-sized substrates pre-designed to achieve nanometer precision. The perovskite material grows into grains of specified sizes in the designed micron or nanometer pattern. Without damaging the performance of the semiconductor material, the size of a single pixel of the device can be reduced to the micron and nanometer range.

[0009] The micro- and nano-perovskite light-emitting diodes prepared based on the present invention have higher precision than those prepared through metal masks and complex alignment and overlay processes, avoiding the inherent edge precision limitations of metal masks or other masks. Using a common cathode or common anode connection method, they can be subsequently combined with transistor drivers to achieve high-precision imaging, detection and other integrated device functions, avoiding the problem of mass transfer. Compared with inorganic light-emitting diodes, they have the characteristics of simple preparation and avoid the problems of damage and lattice mismatch in top-down preparation methods. At the same time, perovskite materials have higher brightness, purer light color, and more obvious contrast compared to organic semiconductor materials. Compared with cadmium-based quantum dot semiconductor materials, perovskite materials have low toxicity and less harm to the environment.

[0010] The preparation steps of the micro perovskite light-emitting diode are as follows: the preparation steps include: S1: preparing a substrate; S2: forming a patterned first electrode and etching; S3: depositing an insulating dielectric layer by physical, chemical, or a combination of physical and chemical methods; S4: preparing a positive photoresist layer on the insulating dielectric layer; S5: using a photolithography mask with micron precision to partially block the positive photoresist, and using ultraviolet light to expose the unblocked positive photoresist; S6: using a chemical method to develop the positive photoresist on the substrate , obtaining a micro-groove area identical to the pattern of the photolithography mask; S7: etching the insulating dielectric layer using reactive ion etching or ion etching to obtain micro-grooves identical to the positive photoresist pattern in the insulating dielectric layer pattern; S8: removing the residual positive photoresist pattern using plasma or ozone or chemical reagents; S9: preparing a passivation layer on the obtained substrate with the micro-groove structure, the passivation layer preparation method can be magnetron sputtering, thermal evaporation, atomic force deposition, chemical deposition; S10: on the substrate with the passivation layer, Prepare a first charge transport layer, the first charge transport layer covers the substrate insulating dielectric layer and the micro-groove area; S11: prepare a perovskite light-emitting layer on the first charge transport layer, the perovskite light-emitting layer can be prepared by thermal evaporation, solution method, scraping method, spraying method, in-situ reaction method, the perovskite light-emitting layer covers the substrate insulating dielectric layer and the micro-groove area with the charge transport layer; S12: prepare a second charge transport layer on the substrate covered with the perovskite light-emitting layer, the second charge transport layer can be prepared by thermal evaporation, solution method, scraping method, spraying method, in-situ reaction method, the second charge transport layer fully covers the perovskite light-emitting layer; S13: prepare a second electrode on the substrate covered with the second charge transport layer, the pattern of the electrode needs to fully cover the charge transport layer; the second electrode prepared by the above steps is open circuit with the first electrode, ensuring that the first electrode and the first charge transport layer form ohmic contact, the second electrode and the second charge transport layer form ohmic contact, the charge is only transmitted through the prepared micro-pattern structure, and finally the charge forms a micro-sized perovskite light-emitting diode with radiative composite light emission in the micro-pattern area;

[0011] A micro perovskite light-emitting diode (LED) is a device with a side length or diameter of a single light-emitting pixel between 1 micron and 100 microns. The light-emitting layer material of the micro perovskite light-emitting diode is based on or contains perovskite semiconductor materials. The external quantum efficiency of the micro perovskite light-emitting diode can reach 10%-30%. The micro perovskite light-emitting diode can work in a passive driving mode or in an active driving mode in combination with a transistor. The pixel density of the light-emitting array based on the micro perovskite light-emitting diode is between 20PPI and 25400PPI. The full width at half maximum of its light-emitting spectrum is generally between 10nm and 100nm, and the electroluminescence peak wavelength is in the range of 300-2500nm.

[0012] The steps of preparing nano-perovskite light-emitting diodes are as follows: S1: preparing a substrate; S2: forming a patterned first electrode and etching it; S3: depositing an insulating dielectric layer by physical, chemical, or physical and chemical methods; S4: preparing a positive photoresist layer on the insulating dielectric layer; S5: using a deep ultraviolet lithography machine or electron beam with nanometer-level precision to expose the positive photoresist, or using a focused ion beam to prepare nanometer-precision patterns on the positive photoresist; S6: using a chemical method to develop the positive photoresist on the substrate, and then forming a positive photoresist on the positive photoresist. Obtain a pattern prepared by a deep ultraviolet lithography machine, electron beam exposure, or focused ion beam; S7: Use reactive ion etching or ion etching to etch the insulating dielectric layer, and obtain a nano-pattern structure identical to the positive photoresist pattern by etching the insulating dielectric layer pattern; S8: Use plasma, ozone, or chemical reagents to remove the residual positive photoresist pattern; S9: Prepare a passivation layer on the substrate with the obtained nano-pattern structure, and the passivation layer preparation method can be magnetron sputtering, thermal evaporation, atomic force deposition, or chemical deposition; S10: On the substrate with the passivation layer On the substrate, a first charge transport layer is prepared, and the first charge transport layer covers the substrate insulating dielectric layer and the nano-pattern structure area; S11: a perovskite light-emitting layer is prepared on the first charge transport layer, and the perovskite light-emitting layer can be prepared by thermal evaporation, solution method, scraping method, spraying method, and in-situ reaction method, and the perovskite light-emitting layer covers the substrate insulating dielectric layer and the nano-pattern structure area with the charge transport layer; S12: a second charge transport layer is prepared on the substrate covered with the perovskite light-emitting layer, and the second charge transport layer can be prepared by thermal evaporation, solution method, scraping method, spraying method, and in-situ reaction method, and the second charge transport layer fully covers the perovskite light-emitting layer; S13: a second electrode is prepared on the substrate covered with the second charge transport layer, and the pattern of the electrode needs to fully cover the charge transport layer; the second electrode prepared by the above steps is open circuited with the first electrode to ensure that the first electrode and the first charge transport layer form ohmic contact, the second electrode forms ohmic contact with the second charge transport layer, and the charge is only transmitted through the prepared nano-pattern structure, and finally the charge forms a nano-sized perovskite light-emitting diode with radiative composite light emission in the micro-pattern area;

[0013] A nanoperovskite light-emitting diode is a device with a side length or diameter of a single light-emitting pixel between 1 nanometer and 1 micron; the light-emitting layer material of the nanoperovskite light-emitting diode is based on or contains perovskite semiconductor materials; the external quantum efficiency of the nanoperovskite light-emitting diode reaches 1%-10%; the nanoperovskite light-emitting diode can work in a passive driving mode or in an active driving mode in combination with a transistor, and the pixel density of the light-emitting array based on the nanoperovskite light-emitting diode is between 25400PPI and 127000PPI; the full width at half maximum of its light-emitting spectrum is between 10nm-100nm; and the electroluminescence peak wavelength is in the range of 300-2500nm.

[0014] The preparation steps of the micro perovskite light-emitting diode that can be driven by a transistor are as follows: S1: prepare a conductive gate and etch a pattern; S2: cover the conductive gate with an insulating dielectric layer by magnetron sputtering, thermal evaporation, chemical deposition, etc.; S3: prepare a semiconductor material layer at the position corresponding to the conductive gate, and the semiconductor material can be a perovskite semiconductor, an inorganic semiconductor material, an organic semiconductor material, or a two-dimensional semiconductor material; S4: prepare an ITO conductive layer on the insulating dielectric layer and the semiconductor material layer; S5: etch the ITO by physical and chemical methods, and completely separate the ITO in the semiconductor area. The ITO is used as the drain and source respectively; S6: the ITO is further etched on the drain by physical and chemical methods, and the etched area is used as the working area of ​​the micro perovskite light-emitting diode; S7: a layer of SiO2 insulating layer is fully covered, covering the drain, source and semiconductor area of ​​the transistor. The SiO2 insulating layer protects the semiconductor material of the transistor on the one hand, and the insulating dielectric material serves as the substrate of the micro light-emitting diode on the other hand; S8: a layer of positive photoresist is spin-coated; S9: a photolithography mask with micron precision is used to block the positive photoresist in a local area, and ultraviolet light is used to block the unblocked part of the positive photoresist. exposure; S10: etching the insulating dielectric layer using reactive ion etching or ion etching to obtain micro-grooves identical to the positive photoresist pattern in the insulating dielectric layer; S11: removing the residual positive photoresist pattern using plasma, ozone, or chemical reagents; S12: preparing a passivation layer on the substrate with the micro-groove structure, the passivation layer preparation method can be magnetron sputtering, thermal evaporation, atomic force deposition, or chemical deposition; S13: preparing a first charge transport layer on the substrate with the passivation layer, the first charge transport layer covering the substrate insulating dielectric layer and the micro-groove area; S14: A perovskite light-emitting layer is prepared on the first charge transport layer. The perovskite light-emitting layer can be prepared by thermal evaporation, solution method, scraping method, spraying method, or in-situ reaction method. The perovskite light-emitting layer covers the substrate insulating dielectric layer and the micro-groove area with the charge transport layer; S15: a second charge transport layer is prepared on the substrate covered with the perovskite light-emitting layer. The second charge transport layer can be prepared by thermal evaporation, solution method, scraping method, spraying method, or in-situ reaction method. The second charge transport layer fully covers the perovskite light-emitting layer; S16: a second electrode is prepared on the substrate covered with the second charge transport layer. The pattern of the electrode needs to fully cover the charge transport layer.

[0015] The preparation steps of the nano-perovskite light-emitting diode that can be driven by a transistor are as follows: S1: prepare a conductive gate and etch a pattern; S2: cover the conductive gate with an insulating dielectric layer by magnetron sputtering, thermal evaporation, and chemical deposition; S3: prepare a semiconductor material layer at the position corresponding to the conductive gate, and the semiconductor material is one of perovskite semiconductor, inorganic semiconductor material, organic semiconductor material, and two-dimensional semiconductor material; S4: prepare an ITO conductive layer on the insulating dielectric layer and the semiconductor material layer; S5: etch the ITO by physical and chemical methods, and completely separate the ITO in the semiconductor area, and the separated part of the ITO As the drain and source respectively; S6: further etch ITO on the drain by physical and chemical methods, and the etched area serves as the working area of ​​the nano-perovskite light-emitting diode; S7: fully cover with a layer of SiO2 insulating layer, covering the drain, source and semiconductor area of ​​the transistor. The SiO2 insulating layer protects the semiconductor material of the transistor on the one hand, and the insulating dielectric material serves as the substrate of the nano-perovskite light-emitting diode on the other hand; S8: spin-coat a layer of positive photoresist; S9: use a deep ultraviolet lithography machine or electron beam exposure machine with nanometer precision to expose the positive photoresist, or use a focused ion beam to nanometer the positive photoresist Precision pattern preparation; S10: using a chemical method to develop the positive photoresist on the substrate, and obtaining a pattern on the positive photoresist that is the same as that prepared by a deep ultraviolet lithography machine, electron beam exposure, or focused ion beam; S11: using reactive ion etching or ion etching method to etch the insulating dielectric layer, and etching the insulating dielectric layer pattern to obtain a nano-pattern structure that is the same as the positive photoresist pattern; S12: using plasma, ozone, or chemical reagents to remove the residual positive photoresist pattern; S13: on the substrate with the passivation layer, preparing a first charge transfer layer, the first charge transfer layer covering the substrate insulating dielectric layer and the nano-pattern structure area; S14 : A perovskite light-emitting layer is prepared on the first charge transport layer. The perovskite light-emitting layer can be prepared by thermal evaporation, solution method, blade coating, spraying method, or in-situ reaction method. The perovskite light-emitting layer covers the substrate insulating dielectric layer and the nano-patterned structure area with the charge transport layer; S15: A second charge transport layer is prepared on the substrate covered with the perovskite light-emitting layer. The second charge transport layer can be prepared by thermal evaporation, solution method, blade coating, spraying method, or in-situ reaction method. The second charge transport layer fully covers the perovskite light-emitting layer; S16: A second electrode is prepared on the substrate covered with the second charge transport layer. The pattern of the electrode needs to fully cover the charge transport layer.

[0016] The perovskite light emitting layer material comprises a perovskite semiconductor material, and the perovskite semiconductor material component is A'2A n-1 B n X 3n+1 Or ABX3, wherein n is a positive integer, A' is an organic amine cation, including but not limited to phenylethylamine cation PEA + , phenylbutanamine cationic PBA+ 、1,4-Butanediamine cation BDA 2+ , p-Fluorophenylethylamine cation pF-PEA + 、2-(4-methoxyphenyl)ethylamine cation MOPEA + A is a monovalent cation, including but not limited to a combination of one or more of cesium ion, methylamine ion, methylamine ion, ethylamine ion, hydrazine ion, guanidine ion, isopropylamine ion, and imidazolium ion; B is a metal cation, including but not limited to a combination of one or more of lead ion, tin ion, germanium ion, indium ion, and bismuth ion. X is a monovalent anion, including but not limited to a combination of one or more of chloride ion, bromide ion, iodide ion, carbonate ion, and oleate ion. The anion X, cation A', cation A and cation B in the perovskite semiconductor form atoms or groups that interact with each other such as ionic bonds or coordination bonds; the precursor solution of the perovskite material is prepared by dissolving A'X, AX, BX2 in a solvent or dissolving AX, BX2 in a solvent, and the solvent includes but is not limited to a mixture of one or more of DMF, DMSO, GBL, NMP, DMA, and ACN; the electroluminescent semiconductor material in the perovskite light-emitting diode is a combination of one or more of quasi-two-dimensional perovskite semiconductor materials, three-dimensional perovskite semiconductor materials, perovskite quantum dots, perovskite micron single crystals, perovskite nano single crystals, perovskite nanowires, and perovskite micron wires; the light-emitting layer material of the perovskite light-emitting diode is a combination of perovskite material and metal oxides, insulating materials, colloidal quantum dots, organic polymers, organic small molecules, two-dimensional materials, phosphorescent materials, thermally activated delayed fluorescence materials, group III-V materials, and group II-VI materials.

[0017] The charge transport layer materials are divided into two categories: organic electron transport layer and inorganic electron transport layer, among which the organic electron transport layer includes TPBi, BAlq, Phen-m-PhDPO, POPy2, PO-T2T, Alq3, B3PYMPM; the inorganic electron transport layer includes Ga2O3, Si3N4, ZrO2, V2O5, Al2O3, NiOx, MoO3, ZnO, MgO, NiO, SnO2, TiO2; the hole transport materials are divided into two categories: organic hole transport layer and hole-free transport layer, among which the organic hole transport layer includes TFB, PTAA, TAPC, PEDOT:PSS, Poly-TPD, PVK, TCTA, CBP, TPD, CuPc, M-MTDATA, NPB, Rubrene; the inorganic hole transport layer mainly includes copper oxide, nickel oxide, molybdenum trioxide, tungsten trioxide, and vanadium pentoxide. The substrates used for micro and nano perovskite light-emitting diodes include conductive glass, silicon substrates, polytetrafluoroethylene materials, and piezoelectric ceramics; the materials used to prepare the patterned insulating layer include silicon dioxide, aluminum oxide, silicon nitride, and aluminum nitride; the methods for preparing the insulating layer materials include: one or a combination of magnetron sputtering, MOCVD, and thermal evaporation.

[0018] The micro perovskite light-emitting diode, nano perovskite light-emitting diode, passive / active driven micro perovskite light-emitting diode array, and passive / active nano perovskite light-emitting diode array can be applied to light-emitting devices, solar cells, transistors, photodetectors, single crystals, X-ray scintillators, fluorescent films, phosphors, nanocrystals, quantum dots, and lasers.

[0019] The technical problems to be solved by the present invention are as follows: (1) When the size of traditional III-V micro-LEDs is reduced to below 10 microns, a serious efficiency drop problem occurs. Since the overall thickness of traditional III-V micro-LED devices is several microns and a top-down etching method is used, there is a large sidewall-to-volume ratio, forming a large number of non-radiative recombination channels on the sidewalls. (2) Traditional III-V micro-LEDs cannot achieve pixel side lengths or sizes of hundreds of nanometers, which limits the maximum achievable pixel density. (3) The III-V preparation process is complex, the cost is high, and the yield of mass transfer is low.

[0020] Beneficial effects of the present invention: The present invention realizes high-performance micro and nano perovskite light-emitting diodes that can work alone. The method can avoid the problems of high cost, complex process, low yield and mass transfer of group III and V micro light-emitting diodes. The specific effects achieved are as follows: (1) Based on the present invention, the micron perovskite light-emitting diodes with a size (side length or diameter) of 100 microns to less than 10 microns show that the efficiency decreases little as the size decreases. The problem of efficiency decrease as the size decreases is effectively suppressed, and the external quantum efficiency of 20% close to that of millimeter-sized devices can be maintained. Compared with traditional micro light-emitting diodes, the efficiency decrease as the size decreases is negligible. (2) Based on the present invention, nano perovskite light-emitting diodes with a pixel size of less than 1 micron can be realized, and the nano perovskite light-emitting diodes with the smallest pixel size can be further prepared, realizing a pixel size (side length) of less than 100 nanometers. (3) Based on the present invention, an array with a pixel size (side length) of less than 100 nanometers can be realized. When the window area is designed according to 50%, a pixel density of more than 127,000 can be achieved. The micro- and nano-perovskite light-emitting diodes of the present invention can also be combined with passive and active drive technology solutions. The present invention is expected to be applied to linear and area array photodetectors, imaging systems, high-pixel displays, and silicon-based integrated devices based on perovskite semiconductor materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. The drawings described below are only embodiments of the present invention.

[0022] FIG1 is a schematic diagram showing the principle of preparing micro and nano perovskite light-emitting diodes according to the present invention.

[0023] FIG2 is a flow chart of the preparation of micro and nano perovskite light-emitting diodes according to the present invention.

[0024] FIG3 is a flow chart of the preparation of a passively driven micro perovskite light-emitting diode array according to the present invention.

[0025] FIG4 is a SEM morphology image of the micro substrate prepared by the present invention.

[0026] FIG5 is a SEM morphology of the micro-substrate prepared in the present invention with or without perovskite.

[0027] FIG6 is a SEM image of the substrate of a single nano-sized perovskite light-emitting diode.

[0028] FIG. 7 is a SEM morphology image of the nano-substrate prepared by the present invention.

[0029] FIG8 is a fluorescence lifetime diagram of near-infrared perovskite on micro-substrates of different sizes prepared by the present invention.

[0030] FIG9 is a test performance diagram of the near-infrared micro perovskite light-emitting diode prepared by the present invention.

[0031] FIG10 is a test performance diagram of the near-infrared nano-perovskite light-emitting diode prepared by the present invention.

[0032] FIG11 is a spectrum diagram of the near-infrared nano-perovskite light-emitting diode prepared by the present invention.

[0033] FIG12 is a transient electroluminescence image of the near-infrared micro perovskite light-emitting diode prepared by the present invention.

[0034] FIG13 is an ultrafast transient electroluminescence image of the near-infrared micro perovskite light-emitting diode prepared by the present invention.

[0035] FIG14 is a diagram showing the operating bandwidth of the near-infrared micro perovskite light-emitting diode prepared by the present invention.

[0036] FIG15 is a test performance diagram of the green light micro perovskite light-emitting diode prepared by the present invention.

[0037] FIG16 is a distribution diagram of the external quantum efficiency of a green light micro perovskite light-emitting diode as a function of area.

[0038] FIG17 is a test performance diagram of the deep red light micro perovskite light emitting diode prepared by the present invention.

[0039] FIG18 is a schematic diagram of the structure of the micro- and nano-sized perovskite light-emitting diode passive display array of the present invention.

[0040] FIG19 is a flow chart of a transistor-driven micro perovskite light-emitting diode prepared by the present invention.

[0041] FIG20 is a schematic diagram of the structure of a transistor-driven micro perovskite light-emitting diode prepared in the present invention.

[0042] FIG21 is a schematic diagram showing the principle of a transistor-driven micro perovskite light-emitting diode array prepared in the present invention.

[0043] FIG22 is a flow chart of a transistor-driven nano-perovskite light-emitting diode prepared by the present invention. DETAILED DESCRIPTION

[0044] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the following clearly and completely describes the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0045] According to one aspect of the present invention, the present invention takes light-emitting diodes of different light colors as an example to specifically illustrate how to realize micro- and nano-sized light-emitting diodes of different light-emitting colors, and characterizes the performance of micro- and nano-sized light-emitting diodes through testing instruments.

[0046] Figure 1 is a schematic diagram of a micro- and nano-perovskite light-emitting diode. From bottom to top, it includes a substrate 1, a first electrode 2, a patterned insulating layer 3, a passivation layer 4, a first charge transport layer 5, a perovskite active layer 6, a second charge transport layer 7, a second electrode 8, and a charge recombination region 9. The white dashed line indicates the location where electron-hole carriers form effective radiative recombination and light emission, while the black dashed line indicates the direction of light emission. Substrate 1 is a substrate with a first electrode 2. The first electrode can be any material, such as indium tin oxide, silver, gold, aluminum, copper, or chromium. Substrate 1 can be any material, such as glass, silicon wafer, sapphire, flexible substrate, or metal foil.

[0047] For micro and nano perovskite light-emitting diodes, the charge transport layer is a metal oxide (such as TiO2, SnO2, ZnO, etc.), and is modified on the surface with a layer of organic matter containing amino or carbonyl groups (such as PEIE, PEI, PEOz, etc.). The perovskite layer is obtained by a solution process from a mixed solution of A'X, AX, BX2, additives, etc.; the hole transport layer is Poly-TPD, TFB, F8, Spiro-MeOTAD, carbazole polymers (such as PVK, etc.), aromatic diamine compounds (such as TPD, NPB, etc.) or star-shaped triphenylamine compounds (PTDATA, etc.). The first electrode and the second electrode layer are any one of ITO, silver, gold, aluminum, copper, chromium, etc., and are modified by a metal oxide MoO X , WO x etc. modification.

[0048] FIG2 is a flow chart of the preparation of a micro perovskite light-emitting diode according to the present invention, wherein the preparation steps include: S1: preparing a substrate; S2: forming a patterned first electrode and etching; S3: depositing an insulating dielectric layer by a physical, chemical, or physical-chemical method; S4: preparing a positive photoresist layer on the insulating dielectric layer; S5: using a photolithography mask with micron precision to partially block the positive photoresist, and using ultraviolet light to expose the unblocked positive photoresist; S6: using a chemical method to block the positive photoresist on the substrate; The resist is developed to obtain a micro-groove area with the same pattern as the photoresist mask; S7: the insulating dielectric layer is etched by reactive ion etching or ion etching to obtain micro-grooves with the same pattern as the positive photoresist in the insulating dielectric layer; S8: the residual positive photoresist pattern is removed by plasma or ozone or chemical reagents; S9: a passivation layer is prepared on the substrate with the micro-groove structure, and the passivation layer preparation method can be magnetron sputtering, thermal evaporation, atomic force deposition, chemical deposition; S10: on the substrate with the passivation layer On, prepare a first charge transport layer, the first charge transport layer covers the substrate insulating dielectric layer and the micro-groove area; S11: prepare a perovskite light-emitting layer on the first charge transport layer, the perovskite light-emitting layer can be prepared by thermal evaporation, solution method, scraping method, spraying method, in-situ reaction method, the perovskite light-emitting layer covers the substrate insulating dielectric layer and the micro-groove area with the charge transport layer; S12: prepare a second charge transport layer on the substrate covered with the perovskite light-emitting layer, the second charge transport layer can be prepared by thermal evaporation, solution method, scraping method, spraying method, in-situ reaction method, the second charge transport layer fully covers the perovskite light-emitting layer; S13: prepare a second electrode on the substrate covered with the second charge transport layer, the pattern of the electrode needs to fully cover the charge transport layer; the second electrode prepared by the above steps is open circuit with the first electrode, ensuring that the first electrode and the first charge transport layer form ohmic contact, the second electrode and the second charge transport layer form ohmic contact, the charge is only transmitted through the prepared micro-pattern structure, and finally the charge forms a micro-sized perovskite light-emitting diode with radiative composite light emission in the micro-pattern area.

[0049] FIG3 is a flow chart of the present invention for preparing a passively driven micro perovskite light-emitting diode array, wherein the preparation steps include: S1: preparing a substrate; S2: forming a patterned first electrode and etching it into different conductive areas; S3: depositing an insulating dielectric layer by a physical, chemical, or physical-chemical method; S4: preparing a positive photoresist layer on the insulating dielectric layer; S5: using a photolithography mask with micron precision to partially block the positive photoresist, and using ultraviolet light to expose the unblocked part of the positive photoresist; S6: using a chemical method to develop the positive photoresist on the substrate, and obtaining a micro-groove area on the positive photoresist that is identical to the photolithography mask pattern; S7: using reactive ion etching or ion etching to etch the insulating dielectric layer, and obtaining micro-grooves identical to the positive photoresist pattern in the insulating dielectric layer pattern; S8: using plasma, ozone, or chemical reagents to remove the residual positive photoresist pattern; S9: preparing a passivation layer on the substrate with the obtained micro-groove structure, and the passivation layer preparation method can be magnetic etching. Controlled sputtering, thermal evaporation, atomic force deposition, chemical deposition; S10: On a substrate with a passivation layer, a first charge transport layer is prepared, and the first charge transport layer covers the substrate insulating dielectric layer and the micro-groove area; S11: On the first charge transport layer, a perovskite light-emitting layer is prepared, and the perovskite light-emitting layer can be prepared by thermal evaporation, solution method, scraping method, spraying method, and in-situ reaction method, and the perovskite light-emitting layer covers the substrate insulating dielectric layer and the micro-groove area with the charge transport layer; S12: On a substrate covered with a perovskite light-emitting layer, a second charge transport layer is prepared, and the second charge transport layer can be prepared by thermal evaporation, solution method, scraping method, spraying method, and in-situ reaction method, and the second charge transport layer fully covers the perovskite light-emitting layer; S13: On the substrate covered with the second charge transport layer, a second electrode is prepared, and the pattern of the electrode needs to partially cover the charge transport layer. A device that can be driven independently is composed of a separated first electrode and a separated second electrode. By controlling the connected electrodes, a scanning method is adopted to drive the selected micro perovskite light-emitting diode.

[0050] The second electrode prepared through the above steps is open circuited with the first electrode, ensuring that the first electrode forms an ohmic contact with the first charge transport layer, and the second electrode forms an ohmic contact with the second charge transport layer. Charges are only transmitted through the prepared micro-pattern structure, and ultimately the charges form a micro-sized perovskite light-emitting diode with radiative composite light emission within the micro-pattern area.

[0051] Figure 4 shows SEM images of the fabricated micro-perovskite LED array. Figure 4a shows a 20-micron diameter array, and Figure 4b shows a magnified image of a single 20-micron diameter microgroove. The white circular area represents the exposed electrode, and the dark gray represents the insulating dielectric area. It can be seen that the boundary conformality is excellent, with excellent uniformity and repeatability across the microgrooves. The exposed electrodes (white areas) are also uniform, and the dark gray insulating dielectric area is evenly covered with no noticeable holes.

[0052] Figure 5 shows the SEM morphology of the micro-substrate with and without perovskite. Figure 5a shows a square microgroove of 80*80 microns, where (1), (2), and (3) correspond to the three boundaries respectively. It can be seen that the side wall boundaries are obvious and the conformal effect is very good; Figure 5b shows the substrate after coating with near-infrared perovskite, where (1'), (2'), and (3') correspond to the three boundaries of (1), (2), and (3) respectively. It can be seen that the perovskite still has a relatively good conformal effect. The perovskite grain size is tens of nanometers, and there is a clear boundary at the side wall boundary, but it still has a relatively good morphology. The side wall boundary has little effect on the formation of the perovskite, which means that the non-radiative recombination loss caused by the side wall boundary can be very small.

[0053] Figure 6 shows an SEM image of the substrate of a single nano-sized perovskite light-emitting diode. Figures 6a-d correspond to nanopores with diameters of 1000nm, 500nm, 200nm, and 100nm, respectively. It can be seen that the boundaries are relatively clear and the conformal effect is very good. The interior of the exposed electrode (white area) is very uniform, and the dark gray insulating dielectric area is evenly covered without obvious holes.

[0054] Figure 7 is an SEM image of the substrate of the prepared nano-sized perovskite light-emitting diode array, corresponding to holes with diameters of 1000nm, 500nm, and 100nm, respectively. The nanopore duty cycle is 50%. It can be seen that the boundaries are relatively clear and the conformal effect is very good. The exposed electrode (white area) is very uniform inside, and the dark gray insulating medium area is evenly covered without obvious holes.

[0055] The micro- and nano-sized perovskite light-emitting diode substrates prepared in the present invention are pre-patterned. The preparation of light-emitting diodes of different light colors requires corresponding different perovskite precursor solutions. The following embodiments are described using a solution method for preparation, and are explained according to the preparation of perovskite precursors, the preparation of micro- and nano-sized perovskite light-emitting diodes, and the characterization of device performance. The device performance characterization is described in detail in the specific embodiments.

[0056] (1) Preparation of perovskite precursor

[0057] The perovskite precursor solution is prepared by dissolving A'X, AX, and BX in a solvent (which can be any one or a mixed solvent such as DMF, DMSO, GBL, NMP, acetonitrile, etc.), wherein the A position is a monovalent cation, such as a cesium ion (Cs + ), methylamine ion (MA + ), methylamine ion (FA + ), ethylamine ion (EA + ), hydrazine ion (HA + ), guanidine ion (GA + ), isopropylamine ion (IPA + ), imidazolium ion (IA + ) etc.; B position is divalent metal cation, such as lead ion (Pb 2+ ), tin ions (Sn 2+ ), Germanium ions (Ge 2+ ), indium ions (In 2+ ), bismuth ion (Bi 2+ ) etc.; X-position anions include: chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ) etc. The concentration of the perovskite precursor solution is 0.01-0.5 mol / L.

[0058] (2) Preparation of micro and nano perovskite light-emitting diodes

[0059] The substrate is cleaned in an ultrasonic machine with deionized water, isopropyl alcohol (IPA), and acetone for 15 minutes in sequence. Before spin coating, the ITO glass substrate is treated with a UV ozone machine for 60 minutes. The electron transport layer is prepared by a spin coating method and annealed for a certain time. The modified layer is prepared by a spin coating method and annealed for a certain time. Subsequently, the perovskite layer is prepared by a solution method, and an antisolvent such as chlorobenzene, toluene, ethyl acetate, anhydrous ether, chloroform, etc. or any one or more mixed solvents are introduced during the spin coating process. The hole transport layer is then prepared by spin coating, evaporation, magnetron sputtering, atomic layer deposition, etc. The electrode layer is then prepared by evaporation, magnetron sputtering, atomic layer deposition, etc.

[0060] 1. Example 1: Preparation of near-infrared micro- and nano-perovskite light-emitting diodes

[0061] The micro- and nano-sized perovskite light-emitting diode substrates prepared by the above process have exposed the first electrode ITO. After the substrate is cleaned, the first charge transport layer is spin-coated. The first charge transport layer uses an electron transport layer zinc oxide ZnO, and the modification layer is PEIE. The perovskite precursor solution is dissolved in 1 mL DMF with a molar ratio of FAI:PbI2:SFB10=2:1:x (x=0-0.3) to prepare 0.13 mol L -1The solution was spin-coated at 5000 rpm, and about 5 seconds after the start of the spin coating process, 100 μL of chlorobenzene was added to the sample as an antisolvent to accelerate the crystallization of the perovskite. After the spin coating, the sample was annealed at 100°C for 10 minutes to obtain a perovskite film. The second charge transport layer used a hole transport layer TFB with a TFB concentration of 12 mg / ml. Finally, the second electrode was prepared, and the second electrode used MoOx / Au.

[0062] Figure 8 shows the fluorescence lifetime of near-infrared perovskite on different substrates. Figure 8a shows the near-infrared perovskite without ITO, with ITO, at the ITO boundary, and with a photolithographic microstructure. It can be seen that the location without ITO has the longest fluorescence lifetime, while the location at the ITO boundary has the shortest fluorescence lifetime, indicating that the ITO boundary has more defects than the ITO surface, leading to quenching. The ITO boundary has more non-radiative recombination channels, while the photolithographic microstructure has a longer fluorescence lifetime than the ITO surface, indicating that the photolithographic microstructure reduces the quenching phenomenon of ITO. Figure 8b shows the fluorescence lifetime of the near-infrared perovskite on microstructures of different sizes. It can be seen that there is almost no change, indicating that the size change of the photolithographic structure has no significant effect on the fluorescence quenching of the perovskite, which means that the non-radiative recombination channels are relatively small, which provides a guarantee for the realization of high-performance near-infrared perovskite light-emitting diodes.

[0063] Figure 9 shows the test performance of near-infrared micro perovskite LEDs. The micro perovskite LEDs range in size from 10 microns to 650 microns. Figure 9a shows the current-voltage curve of the micro perovskite LED. It can be seen that at the low-voltage end, the current is essentially the same. Smaller sizes enable higher voltages and higher current densities, indicating that smaller devices have better heat dissipation performance. Figure 9b shows the external quantum efficiency-radiance curve. It can be seen that smaller sizes enable higher radiance, while also exhibiting a smaller roll-off in the external quantum efficiency. This indicates that electron-hole injection is more balanced in smaller devices and is less affected by thermal effects. Figure 9c shows the radiance-voltage curve. Similarly, smaller devices achieve higher radiance and higher voltage, consistent with the higher currents achieved in Figure 9a. Figure 9d shows the external quantum efficiency-current curve. It can be seen that the external quantum efficiency roll-off decreases as the size decreases.

[0064] Figure 10 shows the test performance of near-infrared micro- and nano-perovskite light-emitting diodes. The effective operating area of ​​the nano-perovskite light-emitting diodes ranges from 200nm, 500nm, and 1000nm. Figure 10a shows the radiance-voltage curve of the nano-perovskite light-emitting diodes. It can be seen that when the voltage is less than 4V, the radiance is basically the same. After 4V, the device with a 200nm hole can achieve higher radiance. Nano-devices can reach higher voltages than micro-devices. Figure 10b shows the external quantum efficiency-current density curve. Nano-devices can achieve higher current densities than micro-devices, and the roll-off curve is not obvious. Figure 10c shows the external quantum efficiency-device area distribution curve. Compared with the device with crossed electrodes, the device with an insulating dielectric layer can maintain a relatively high external quantum efficiency over a relatively wide size range, while the device with crossed electrodes has a significant decrease at a size of 60 microns. This is mainly because as the size of the lithography changes, the boundary sidewall has a smaller impact on device performance, while the cross electrode has a greater impact. Figure 10d is the average external quantum efficiency-area curve distribution of Figure 10c. It can be seen that as the size decreases below 1 micron, the device performance decreases significantly, indicating that the device can maintain relatively high performance within a relatively wide size range.

[0065] Figure 11 shows the electroluminescence spectrum of the near-infrared nanoperovskite light-emitting diode. The sizes of the effective working area are 100nm, 200nm, 500nm, and 1000nm. It can be seen that the normalized fluorescence spectrum has not changed, indicating that the structure or performance of the luminescent material has not changed.

[0066] Figure 12 shows the transient electroluminescence (EL) characteristics of near-infrared micro-perovskite light-emitting diodes. Figure 12a shows devices fabricated with interdigitated electrodes at different sizes, ranging from 1900 μm to 60 μm. A pulse signal of 4 V, 10 μs pulse width, and 100 Hz frequency is applied. As the area decreases, the rising edge time decreases, indicating the effect of injected carriers on the device. After the voltage is removed, the device forms a loop with the external circuit, where some carriers are dissipated, resulting in a less pronounced change in the falling edge. Figure 12b shows the capacitance-frequency characteristics of devices with interdigitated electrodes at different sizes. As the area decreases, the capacitance first decreases and then increases. This is due to a decrease in plate capacitance and, in part, to increased parasitic capacitance caused by uneven sidewalls. Consequently, the capacitance actually increases with decreasing size. Figure 12c shows the transient EL characteristics of micro-devices fabricated with photolithography, covering a range of sizes from 650 μm to 10 μm. As the size decreases, the rising edge speeds up further, with all rising edges becoming significantly wider than those with interdigitated electrodes, while the falling edge changes little. Figure 12d shows the capacitance-frequency characteristics of the measured photolithographic micro-devices. It can be seen that as the area decreases, the capacitance shows an increasing trend. Compared with the cross-electrode device, the capacitance decreases more. As the number of micron holes increases, the capacitance caused by the sidewall boundary will further increase, and the capacitance will increase as the hole density increases.

[0067] Figure 13 shows the ultrafast transient electroluminescence characteristics of the near-infrared micro perovskite light-emitting diode corresponding to Example 1 of the present application. Figure 13a compares the response speed of the perovskite light-emitting diode with the cross-electrode structure and the structure of the present application. It can be seen that the device with the cross-electrode microstructure has a relatively long response time, while the device with the photolithography microstructure has a relatively short response time. The cross-electrode microstructure device with a side length of 600 microns has a rising edge of 5000ns, while the rising edge of the photolithography microstructure is less than 200ns. As the size is further reduced, both have relatively short rise times. This can reflect that the photolithography micron device has a smaller RC coefficient than the cross-electrode micron device. Since the signal generator and the micro perovskite light-emitting diode device form a loop, the RC coefficient of the device will affect the driving capability of the drive signal, thereby affecting the number of transient carriers actually injected into the micro perovskite light-emitting diode and affecting the rising edge of the transient fluorescence signal. As shown in Figure 13b, by building a push-pull circuit structure with transient large current output outside the signal generator, the pulse signal is loaded into the micro perovskite light-emitting diode through the push-pull structure, which can meet the requirements of transient injection of a large number of carriers. The micro perovskite light-emitting diode can achieve a rising edge at the ns level, indicating that by optimizing the circuit structure, the micro perovskite light-emitting diode can have a very fast response speed and can be used in applications that require high-speed signal response, such as modulators and optical communications.

[0068] Figure 14 is a bandwidth test chart for the micro perovskite light-emitting diode according to Example 1 of the present application. The micro perovskite light-emitting diode was driven by a pulse signal generator with a frequency range of 10 kHz to 60 MHz, a square wave signal with a duty cycle of 50%, and a peak-to-peak value of 3.5 V. The micro light-emitting diode had a side length ranging from 1900 microns to 50 microns and was placed in an integrating sphere with a photodetector connected to a power meter. Voltages of different frequencies were applied to the perovskite light-emitting diode, and the difference in signal amplitude obtained by the power meter reflected the achievable bandwidth. It can be seen that as the size decreases, the corresponding -3dB bandwidth can reach a higher response frequency. The bandwidth of the 1900 micron diode is 1.2 MHz, and that of the 50 micron diode is 4.8 MHz, indicating that micron light-emitting diodes can achieve higher bandwidths.

[0069] 2. Example 2, Preparation Method of Micro Green Perovskite Light Emitting Diode

[0070] Figure 15 shows the test results of green micro perovskite LEDs with a main wavelength of 528nm. The sizes of the micro perovskite LEDs range from 9 microns to 650 microns. Figure 15a shows the brightness-voltage curves of micro perovskite LEDs of different sizes. It can be seen that as the size decreases, the brightness increases. Smaller devices have better heat dissipation performance and thus less heat accumulation. Figure 15b shows that the micro perovskite LED has a brightness of 1,000 cd m -2 to 500,000cd m -2 The external quantum efficiency (EQE) remains above 10%, with the maximum EQE reaching 20%, indicating a wide range of electron-hole charge balanced injection rates. Figure 15c shows the brightness distribution of the micro perovskite light-emitting diode as it changes with area. It can be seen that the average brightness can be maintained at 400,000 cd m in the range of 9 μm to 650 μm. -2 As the area increases, the device with a diameter of 350 microns shows the highest brightness, reaching 750,000 cd m -2, demonstrating the high uniformity and high repeatability of micro perovskite light-emitting diodes. Figure 15d shows the trend of the external quantum efficiency of micro perovskite light-emitting diodes as the area changes. It can be seen that devices with diameters ranging from 10 microns to 650 microns have an external quantum efficiency close to 20%. As the size drops below 10 microns, the external quantum efficiency drops sharply. This is due to leakage in the perovskite layer and device transport layer after the device size is reduced. Since green light devices have more charge transport layers than near-infrared micro perovskite light-emitting diodes, these charge transport layers are more likely to come into direct contact after the size is reduced, resulting in direct non-radiative recombination of electrons and holes, which reduces the external quantum efficiency.

[0071] Figure 16 is a distribution diagram of the external quantum efficiency of micro perovskite light-emitting diodes as the area changes. It can be seen that devices with diameters ranging from 10 microns to 650 microns all have an external quantum efficiency close to 20%. Devices above 50 microns have a narrower distribution range, indicating high repeatability and high uniformity of the devices. As the size decreases below 50 microns, the distribution range gradually increases. It can be seen from the substrate pattern that the repeatability of the substrate is good, and the factors affecting the change in external quantum efficiency are relatively small. Compared with green light devices, near-infrared micro perovskite light-emitting diodes have more charge transfer layers. After the size is reduced, these charge transfer layers are more likely to directly contact, resulting in direct non-radiative recombination of electrons and holes, which reduces the external quantum efficiency.

[0072] 3. Example 3: Preparation of Deep Red Micro Perovskite Light Emitting Diode

[0073] The micro perovskite light-emitting diode substrate prepared by the above process has exposed the first electrode ITO. After the substrate is cleaned, the first charge transport layer is spin-coated. The first charge transport layer uses electron transport layer zinc oxide ZnO, and the modification layer is PEIE. The precursor solution of the perovskite light-emitting layer is dissolved in 1 mL of DMF with a molar ratio of CsI:PbI2:FABr:FAI:SFA=0.5:1:(0.5-x):x:y (x=0-0.25, y=0-0.06) to prepare 0.11 mol L -1 The solution was spin-coated at 5000 rpm, and about 5 seconds after the start of the spin coating process, 100 μL of chlorobenzene was added to the sample as an antisolvent to accelerate the crystallization of the perovskite. After the spin coating, the sample was annealed at 100°C for 10 minutes to obtain a perovskite film. The second charge transport layer used a hole transport layer TFB with a TFB concentration of 12 mg / ml. Finally, the second electrode was prepared, and the second electrode used MoOx / Au.

[0074] Figure 17 shows the test results of deep red micro perovskite light emitting diodes with a main wavelength of 700nm. The sizes of micro perovskite light emitting diodes range from 9 microns to 650 microns. Figure 16a shows the brightness-voltage curves of micro perovskite light emitting diodes of different sizes. It can be seen that as the size decreases, the brightness increases. Smaller devices have better heat dissipation performance and thus less heat accumulation. Figure 16b shows that the micro perovskite light emitting diode has a brightness of 100cd m -2 to 10000cd m -2 The external quantum efficiency (EQE) is maintained at a maximum of 10%, indicating a wide range of electron-hole charge balanced injection rates. Figures 16c and 16d show the brightness distribution of the micro perovskite light-emitting diodes as a function of area. It can be seen that the average brightness can be maintained at 10,000 cd m in the range of 9 μm to 650 μm. -2 , which illustrates the high uniformity and high repeatability of micro perovskite light-emitting diodes.

[0075] Figure 18 is a schematic diagram of the passive display array structure of a micro perovskite light-emitting diode. Using three perovskite light-emitting diodes as an example, from bottom to top, the following are: substrate 1, first bottom electrode 2, second bottom electrode 12, third bottom electrode 13, patterned insulating layer 3, passivation layer 4, first charge transport layer 5, perovskite active layer 6, second charge transport layer 7, second top electrode 8, first top electrode 9, second top electrode 10, and third top electrode 11. The white dashed line indicates the location where electron-hole carriers form effective radiative recombination and light emission, while the black dashed line indicates the direction of light emission. Substrate 1 is a substrate with a bottom electrode. The bottom and top electrodes can be made of any material, such as indium tin oxide, silver, gold, aluminum, copper, or chromium. The electrodes work together to form a device that can operate independently. Substrate 1 can be made of any material, such as glass, silicon wafer, sapphire, flexible substrate, or metal foil.

[0076] FIG19 is a flow chart of a transistor-driven micro perovskite light-emitting diode prepared by the present invention, wherein the preparation steps include: S1: preparing a conductive gate and etching a pattern; S2: covering the conductive gate with an insulating dielectric layer by magnetron sputtering, thermal evaporation, chemical deposition, etc.; S3: preparing a semiconductor material layer at the position corresponding to the conductive gate, and the semiconductor material can be a perovskite semiconductor, an inorganic semiconductor material, an organic semiconductor material, or a two-dimensional semiconductor material; S4: preparing an ITO conductive layer on the insulating dielectric layer and the semiconductor material layer; S5: etching the ITO by physical and chemical methods to completely separate the ITO in the semiconductor region. O, the separated parts of ITO are used as drain and source respectively; S6: ITO is further etched on the drain by physical and chemical methods, and the etched area is used as the working area of ​​the micro perovskite light-emitting diode; S7: A layer of SiO2 insulating layer is fully covered, covering the drain, source and semiconductor area of ​​the transistor. The SiO2 insulating layer protects the semiconductor material of the transistor on the one hand, and the insulating dielectric material serves as the substrate of the micro light-emitting diode on the other hand; S8: A layer of positive photoresist is spin-coated; S9: A photolithography mask with micron precision is used to block a local area of ​​the positive photoresist, and ultraviolet light is used to block the unblocked positive part The photoresist is exposed; S10: the insulating dielectric layer is etched by reactive ion etching or ion etching to obtain micro grooves identical to the positive photoresist pattern in the insulating dielectric layer; S11: the residual positive photoresist pattern is removed by plasma, ozone or chemical reagents; S12: a passivation layer is prepared on the substrate with the micro groove structure, and the passivation layer preparation method can be magnetron sputtering, thermal evaporation, atomic force deposition, or chemical deposition; S13: a first charge transport layer is prepared on the substrate with the passivation layer, and the first charge transport layer covers the substrate insulating dielectric layer and the micro groove area; S1 4: Prepare a perovskite light-emitting layer on the first charge transport layer. The perovskite light-emitting layer can be prepared by thermal evaporation, solution method, doctor blade method, spray method, or in-situ reaction method. The perovskite light-emitting layer covers the substrate insulating dielectric layer and the micro-groove area with the charge transport layer; S15: Prepare a second charge transport layer on the substrate covered with the perovskite light-emitting layer. The second charge transport layer can be prepared by thermal evaporation, solution method, doctor blade method, spray method, or in-situ reaction method. The second charge transport layer fully covers the perovskite light-emitting layer; S16: Prepare a second electrode on the substrate covered with the second charge transport layer. The pattern of the electrode needs to fully cover the charge transport layer.

[0077] Figure 20 is a schematic diagram of the transistor-driven micro perovskite light-emitting diode structure prepared in the present invention. From bottom to top, the following are substrate 1, LED bottom electrode 2, gate 3, semiconductor material 4, insulating dielectric layer 5, drain electrode 6, insulating dielectric layer 7, first charge transport layer 8, perovskite layer 9, second charge transport layer 10, and LED top electrode 11. The transistor is composed of gate 3, insulating dielectric layer 5, drain electrode 6, insulating dielectric layer 7, and LED bottom electrode 2. Substrate 1 is a substrate with a first electrode 2. The first electrode can be any of indium tin oxide, silver, gold, aluminum, copper, chromium, etc. Substrate 1 can be any of glass, silicon wafer, sapphire, flexible substrate, metal foil, etc. The principle of a transistor driving a perovskite light-emitting diode is as follows: ensure that ITO forms an ohmic contact with the charge transfer layer, and the charge is only transmitted through the prepared micro-pattern structure. The current of the driving power supply is injected through the electrode of the micro-light-emitting diode, and reaches the drain of the transistor through the semiconductor material layer of the micro-light-emitting diode material. Under the gate voltage of the transistor, the semiconductor layer of the transistor forms a depletion region, and the charge of the drain passes through the semiconductor depletion region of the transistor to reach the source, and finally returns to the electrode of the driving power supply.

[0078] Figure 21 is a schematic diagram of the transistor-driven micro-perovskite LED array proposed in the present invention. Figure 21a is a schematic diagram of operation, where the center of the top electrode is a transparent electrode, serving as the source of the transistor. Figure 21b shows the schematic diagram in Figure 21a, where the data line and row scan line are connected separately. The data line serves as the gate connection for the transistor, while the row scan line serves as the power supply line for the LED. By selecting the data line and row scan line, a specific micro-LED can be selected for operation.

[0079] Figure 22 is a flow chart of the transistor-driven nano-perovskite light-emitting diode prepared by the present invention. The preparation steps include: S1: preparing a conductive gate and etching a pattern; S2: covering the conductive gate with an insulating dielectric layer by magnetron sputtering, thermal evaporation, and chemical deposition; S3: preparing a semiconductor material layer at the position corresponding to the conductive gate, and the semiconductor material is one of perovskite semiconductor, inorganic semiconductor material, organic semiconductor material, and two-dimensional semiconductor material; S4: preparing an ITO conductive layer on the insulating dielectric layer and the semiconductor material layer; S5: etching the ITO by physical and chemical methods, and completely separating the ITO in the semiconductor area. The separated ITO parts are used as the drain and source respectively; S6: on the drain The ITO is further etched by physical and chemical methods, and the etched area serves as the working area of ​​the nano-perovskite light-emitting diode; S7: A layer of SiO2 insulating layer is fully covered, covering the drain, source, and semiconductor area of ​​the transistor. The SiO2 insulating layer protects the semiconductor material of the transistor on the one hand, and the insulating dielectric material serves as the substrate of the nano-perovskite light-emitting diode on the other hand; S8: A layer of positive photoresist is spin-coated; S9: A deep ultraviolet lithography machine or an electron beam exposure machine with nanometer-level precision is used to expose the positive photoresist, or a focused ion beam is used to prepare nanometer-precision patterns on the positive photoresist; S10: The positive photoresist on the substrate is developed by a chemical method to obtain a pattern on the positive photoresist that is prepared by a deep ultraviolet lithography machine, electron beam exposure, or focused ion beam; S11: Reactive ion etching or ion etching is used to etch the insulating dielectric layer to obtain a nano-pattern structure that is the same as the positive photoresist pattern; S12: Plasma, ozone, or chemical reagents are used to remove the residual positive photoresist pattern; S13: On the substrate with the passivation layer, a first charge transport layer is prepared, the first charge transport layer covers the substrate insulating dielectric layer and the nano-pattern structure area; S14: In the first electrode A perovskite light-emitting layer is prepared on the charge transport layer. The perovskite light-emitting layer can be prepared by thermal evaporation, solution method, doctor blade method, spraying method, or in-situ reaction method. The perovskite light-emitting layer covers the substrate insulating dielectric layer and the nano-patterned structure area with the charge transport layer; S15: a second charge transport layer is prepared on the substrate covered with the perovskite light-emitting layer. The second charge transport layer can be prepared by thermal evaporation, solution method, doctor blade method, spraying method, or in-situ reaction method. The second charge transport layer fully covers the perovskite light-emitting layer; S16: a second electrode is prepared on the substrate covered with the second charge transport layer. The pattern of the electrode needs to fully cover the charge transport layer;

[0080] In the passive driving technology route, the operation of the transistor is determined by the selection of the top electrode and the bottom electrode. As the pixel density increases, the wires are further reduced, resulting in an increase in parasitic resistance. Even if metal with good conductivity is used, there are still problems with parasitic resistance and capacitance. Therefore, it is necessary to combine the transistor driving solution to further shorten the distance that the current passes, which can greatly reduce the existence of parasitic resistance and parasitic capacitance.

[0081] The above description is only a preferred specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any researchers and technicians familiar with the field, within the technical scope described in the present invention, who make equivalent replacements or changes based on the technical solutions and inventive concepts of the present invention, should be covered by the scope of protection of the present invention.

Claims

1. A method for preparing a micro perovskite light-emitting diode, characterized in that: The method specifically comprises the following steps: S1: Prepare substrate; S2: forming a patterned first electrode and etching; S3: depositing an insulating dielectric layer by physical, chemical, or a combination of physical and chemical methods; S4: preparing a positive photoresist layer on the insulating dielectric layer; S5: Use a photomask with micron precision to partially block the positive photoresist, and use ultraviolet light to expose the unblocked positive photoresist. S6: developing the positive photoresist on the substrate using a chemical method to obtain a micro-groove region with the same pattern as the photolithography mask; S7: etching the insulating dielectric layer using reactive ion etching or ion etching to obtain micro-grooves identical to the positive photoresist pattern in the insulating dielectric layer; S8: removing the residual positive photoresist pattern using plasma, ozone or chemical reagents; S9: forming a passivation layer on the obtained substrate with the micro-groove structure, wherein the passivation layer is formed by one or more methods selected from magnetron sputtering, thermal evaporation, atomic force deposition, and chemical deposition; S10: forming a first charge transport layer on the substrate with the passivation layer, wherein the first charge transport layer covers the substrate insulating dielectric layer and the micro-groove region; S11: forming a perovskite light-emitting layer on the first charge transport layer, wherein the perovskite light-emitting layer is formed by thermal evaporation, solution method, doctor blade method, spray method, or in-situ reaction method, and the perovskite light-emitting layer covers the substrate insulating dielectric layer and the micro-groove region with the charge transport layer; S12: preparing a second charge transport layer on the substrate covered with the perovskite light-emitting layer, wherein the second charge transport layer is prepared by thermal evaporation, solution method, doctor blade method, spray method, or in-situ reaction method, and the second charge transport layer completely covers the perovskite light-emitting layer; S13: preparing a second electrode on the layer covered with the second charge transport layer, wherein the pattern of the electrode needs to completely cover the charge transport layer; The second electrode prepared through the above steps is open circuited with the first electrode, ensuring that the first electrode forms an ohmic contact with the first charge transport layer, and the second electrode forms an ohmic contact with the second charge transport layer. Charges are only transmitted through the prepared micro-pattern structure, and ultimately the charges form a micro-sized perovskite light-emitting diode with radiative composite light emission within the micro-pattern area.

2. The micro perovskite light emitting diode prepared by the method for preparing a micro perovskite light emitting diode according to claim 1, characterized in that: A micro perovskite light-emitting diode (LED) is a device with a side length or diameter of a single light-emitting pixel between 1 micron and 100 microns. The light-emitting layer material of the micro perovskite LED is based on or contains a perovskite semiconductor material. The external quantum efficiency of the micro perovskite LED can reach 10%-30%. The micro perovskite LED can operate in a passive driving mode or in an active driving mode in combination with a transistor. The pixel density of the light-emitting array based on micro perovskite light-emitting diodes is between 20PPI and 25400PPI; The full width at half maximum of its luminescence spectrum is generally between 10nm and 100nm, and the electroluminescence peak wavelength is in the range of 300-2500nm.

3. A method for preparing a nano-perovskite light-emitting diode, characterized in that: The method specifically comprises the following steps: S1: Prepare substrate; S2: forming a patterned first electrode and etching; S3: depositing an insulating dielectric layer by physical, chemical, or a combination of physical and chemical methods; S4: preparing a positive photoresist layer on the insulating dielectric layer; S5: Expose the positive photoresist using a deep ultraviolet lithography machine or an electron beam lithography machine with nanometer-level precision, or prepare nanometer-precision patterns on the positive photoresist using a focused ion beam; S6: developing the positive photoresist on the substrate by a chemical method, and obtaining a pattern on the positive photoresist prepared by a deep ultraviolet lithography machine, electron beam exposure, or focused ion beam exposure; S7: etching the insulating dielectric layer using reactive ion etching or ion etching to obtain a nano-pattern structure identical to the positive photoresist pattern in the insulating dielectric layer pattern; S8: removing the residual positive photoresist pattern using plasma, ozone or chemical reagents; S9: preparing a passivation layer on the obtained substrate with the nano-patterned structure, wherein the passivation layer can be prepared by magnetron sputtering, thermal evaporation, atomic force deposition, or chemical deposition; S10: forming a first charge transport layer on the substrate with the passivation layer, wherein the first charge transport layer covers the substrate insulating dielectric layer and the nano-patterned structure region; S11: preparing a perovskite light-emitting layer on the first charge transport layer. The perovskite light-emitting layer can be prepared by thermal evaporation, solution method, doctor blade method, spray method, or in-situ reaction method. The perovskite light-emitting layer covers the substrate insulating dielectric layer with the charge transport layer and the nano-patterned structure area; S12: preparing a second charge transport layer on the substrate covered with the perovskite light-emitting layer. The second charge transport layer can be prepared by thermal evaporation, solution method, doctor blade method, spray method, or in-situ reaction method. The second charge transport layer completely covers the perovskite light-emitting layer. S13: preparing a second electrode on the layer covered with the second charge transport layer, wherein the pattern of the electrode needs to completely cover the charge transport layer; The second electrode prepared through the above steps is open circuited with the first electrode, ensuring that the first electrode forms an ohmic contact with the first charge transport layer, and the second electrode forms an ohmic contact with the second charge transport layer. Charges are only transmitted through the prepared nano-patterned structure, and ultimately the charges form a nano-sized perovskite light-emitting diode that emits radiative composite light within the micro-patterned area.

4. The nano-perovskite light-emitting diode prepared by the method for preparing a nano-perovskite light-emitting diode according to claim 3, characterized in that: The size of a single light-emitting pixel is between 1 nanometer and 1 micron in side length or diameter, which is a nanoperovskite light-emitting diode; The light-emitting layer material of the nano-perovskite light-emitting diode is based on or contains perovskite semiconductor material; The external quantum efficiency of nano-perovskite light-emitting diodes reaches 1%-10%; Nanoperovskite light-emitting diodes can work in passive driving mode or in active driving mode in combination with transistors. The pixel density of the light-emitting array based on nanoperovskite light-emitting diodes is between 25,400 PPI and 127,000 PPI; the full width at half maximum of its light-emitting spectrum is between 10nm and 100nm; and the electroluminescence peak wavelength is in the range of 300-2500nm.

5. A micro perovskite light-emitting diode driven by a transistor, characterized in that: The method specifically comprises the following steps: S1: Prepare a conductive gate and etch a pattern; S2: Covering the conductive gate with an insulating dielectric layer by magnetron sputtering, thermal evaporation, or chemical deposition; S3: preparing a semiconductor material layer at a position corresponding to the conductive gate, where the semiconductor material is one of a perovskite semiconductor, an inorganic semiconductor material, an organic semiconductor material, and a two-dimensional semiconductor material; S4: preparing an ITO conductive layer on the insulating dielectric layer and the semiconductor material layer; S5: Etching the ITO using physical and chemical methods to completely separate the ITO in the semiconductor region. The separated ITO portions serve as the drain and source electrodes respectively. S6: Further etching ITO on the drain electrode using physical and chemical methods, and the etched area serves as the working area of ​​the micro perovskite light-emitting diode; S7: A SiO2 insulating layer is applied to the entire transistor, covering the drain, source, and semiconductor regions. The SiO2 insulating layer protects the semiconductor material of the transistor and serves as the substrate for the micro-LED. S8: spin-coat a layer of positive photoresist; S9: Use a photomask with micron precision to partially block the positive photoresist, and use ultraviolet light to expose the unblocked positive photoresist. S10: etching the insulating dielectric layer using reactive ion etching or ion etching to obtain micro grooves identical to the positive photoresist pattern in the insulating dielectric layer pattern; S11: removing the residual positive photoresist pattern using plasma, ozone or chemical reagents; S12: preparing a passivation layer on the obtained substrate with the micro-groove structure, wherein the passivation layer is prepared by magnetron sputtering, thermal evaporation, atomic force deposition, or chemical deposition; S13: forming a first charge transport layer on the substrate with the passivation layer, wherein the first charge transport layer covers the substrate insulating dielectric layer and the micro-groove region; S14: preparing a perovskite light-emitting layer on the first charge transport layer. The perovskite light-emitting layer can be prepared by thermal evaporation, solution method, doctor blade method, spray method, or in-situ reaction method. The perovskite light-emitting layer covers the substrate insulating dielectric layer with the charge transport layer and the micro-groove area. S15: preparing a second charge transport layer on the substrate covered with the perovskite light-emitting layer. The second charge transport layer can be prepared by thermal evaporation, solution method, doctor blade method, spray method, or in-situ reaction method. The second charge transport layer completely covers the perovskite light-emitting layer. S16: preparing a second electrode on the layer covered with the second charge transport layer, wherein the pattern of the electrode needs to completely cover the charge transport layer.

6. A nano-perovskite light-emitting diode driven by a transistor, characterized in that: The method specifically comprises the following steps: S1: Prepare a conductive gate and etch a pattern; S2: Covering the conductive gate with an insulating dielectric layer by magnetron sputtering, thermal evaporation, or chemical deposition; S3: preparing a semiconductor material layer at a position corresponding to the conductive gate, where the semiconductor material is one of a perovskite semiconductor, an inorganic semiconductor material, an organic semiconductor material, and a two-dimensional semiconductor material; S4: preparing an ITO conductive layer on the insulating dielectric layer and the semiconductor material layer; S5: Etching the ITO using physical and chemical methods to completely separate the ITO in the semiconductor region. The separated ITO portions serve as the drain and source electrodes respectively. S6: Further etching ITO on the drain electrode using physical and chemical methods, and the etched area serves as the working area of ​​the nano-perovskite light-emitting diode; S7: A SiO2 insulating layer is applied to the entire transistor, covering the drain, source, and semiconductor regions. The SiO2 insulating layer protects the semiconductor material of the transistor and serves as the substrate for the nano-perovskite light-emitting diode. S8: spin-coat a layer of positive photoresist; S9: Expose the positive photoresist using a deep ultraviolet lithography machine or an electron beam lithography machine with nanometer-level precision, or prepare nanometer-precision patterns on the positive photoresist using a focused ion beam; S10: developing the positive photoresist on the substrate by a chemical method to obtain a pattern on the positive photoresist prepared by a deep ultraviolet lithography machine, electron beam exposure, or focused ion beam exposure; S11: etching the insulating dielectric layer using reactive ion etching or ion etching to obtain a nano-pattern structure identical to the positive photoresist pattern in the insulating dielectric layer pattern; S12: removing the residual positive photoresist pattern using plasma, ozone or chemical reagents; S13: forming a first charge transport layer on the substrate with the passivation layer, wherein the first charge transport layer covers the substrate insulating dielectric layer and the nano-patterned structure region; S14: preparing a perovskite light-emitting layer on the first charge transport layer. The perovskite light-emitting layer can be prepared by thermal evaporation, solution method, doctor blade method, spray method, or in-situ reaction method. The perovskite light-emitting layer covers the substrate insulating dielectric layer with the charge transport layer and the nano-patterned structure area; S15: preparing a second charge transport layer on the substrate covered with the perovskite light-emitting layer. The second charge transport layer can be prepared by thermal evaporation, solution method, doctor blade method, spray method, or in-situ reaction method. The second charge transport layer completely covers the perovskite light-emitting layer. S16: Prepare a second electrode on the layer covered with the second charge transport layer, and the pattern of the electrode needs to fully cover the charge transport layer.

7. The micro perovskite light emitting diode prepared by the method for preparing a micro perovskite light emitting diode according to claim 2, characterized in that: The micro perovskite light-emitting diode can be used to prepare a micro perovskite light-emitting diode array; a micro perovskite light-emitting diode array based on passive driving technology and a micro perovskite light-emitting diode array based on active driving technology can be realized; and the micro perovskite light-emitting diode can be applied to single-photon sources, AR / VR display technology, array detectors, and imaging systems.

8. The nano-perovskite light-emitting diode prepared by the method for preparing a nano-perovskite light-emitting diode according to claim 4, characterized in that: The nano-perovskite light-emitting diode can be used to prepare nano-perovskite light-emitting diode arrays, and can realize nano-perovskite light-emitting diode arrays based on passive driving technology and nano-perovskite light-emitting diode arrays based on active driving technology; It can be applied to single-photon sources, AR / VR display technology, array detectors, and imaging systems.

9. The method for preparing a micro perovskite light-emitting diode according to claim 1, wherein: The perovskite light emitting layer material comprises a perovskite semiconductor material, and the perovskite semiconductor material component is A'2A n-1 B n X 3n+1 Or ABX3, wherein n is a positive integer, A' is an organic amine cation, including but not limited to phenylethylamine cation PEA + , phenylbutanamine cationic PBA + 、1,4-Butanediamine cation BDA 2+ , p-Fluorophenylethylamine cation pF-PEA + 、2-(4-methoxyphenyl)ethylamine cation MOPEA + A is a monovalent cation, including but not limited to a combination of one or more of cesium ion, methylamine ion, methylamine ion, ethylamine ion, hydrazine ion, guanidine ion, isopropylamine ion, and imidazolium ion; B is a metal cation, including but not limited to a combination of one or more of lead ion, tin ion, germanium ion, indium ion, and bismuth ion; X is a monovalent anion, including but not limited to a combination of one or more of chloride ion, bromide ion, iodide ion, carbonate ion, and oleate ion; in the perovskite semiconductor, anions X, cations A', cations A, and cations B form atoms or groups that interact with each other such as ionic bonds or coordination bonds; the precursor solution of the perovskite material is prepared by dissolving A'X, AX, B X2 is prepared in a solvent or AX and BX2 are dissolved in a solvent, and the solvent includes but is not limited to a mixture of one or more of DMF, DMSO, GBL, NMP, DMA, and ACN; the electroluminescent semiconductor material in the perovskite light-emitting diode is a combination of one or more of quasi-two-dimensional perovskite semiconductor materials, three-dimensional perovskite semiconductor materials, perovskite quantum dots, perovskite micron single crystals, perovskite nano single crystals, perovskite nanowires, and perovskite micron wires; the light-emitting layer material of the perovskite light-emitting diode is a combination of perovskite material and metal oxides, insulating materials, colloidal quantum dots, organic polymers, organic small molecules, two-dimensional materials, phosphorescent materials, thermally activated delayed fluorescence materials, group III and V, and group II and VI.

10. The method for preparing a nano-perovskite light-emitting diode according to claim 3, wherein: The perovskite light emitting layer material comprises a perovskite semiconductor material, and the perovskite semiconductor material component is A'2A n-1 B n X 3n+1 Or ABX3, wherein n is a positive integer, A' is an organic amine cation, including but not limited to phenylethylamine cation PEA + , phenylbutanamine cationic PBA + 、1,4-Butanediamine cation BDA 2+ , p-Fluorophenylethylamine cation pF-PEA + 、2-(4-methoxyphenyl)ethylamine cation MOPEA + A is a monovalent cation, including but not limited to a combination of one or more of cesium ion, methylamine ion, methylamine ion, ethylamine ion, hydrazine ion, guanidine ion, isopropylamine ion, and imidazolium ion; B is a metal cation, including but not limited to a combination of one or more of lead ion, tin ion, germanium ion, indium ion, and bismuth ion; X is a monovalent anion, including but not limited to a combination of one or more of chloride ion, bromide ion, iodide ion, carbonate ion, and oleate ion; in the perovskite semiconductor, anions X, cations A', cations A, and cations B form atoms or groups that interact with each other such as ionic bonds or coordination bonds; the precursor solution of the perovskite material is prepared by dissolving A'X, AX, B X2 is prepared in a solvent or AX and BX2 are dissolved in a solvent, and the solvent includes but is not limited to a mixture of one or more of DMF, DMSO, GBL, NMP, DMA, and ACN; the electroluminescent semiconductor material in the perovskite light-emitting diode is a combination of one or more of quasi-two-dimensional perovskite semiconductor materials, three-dimensional perovskite semiconductor materials, perovskite quantum dots, perovskite micron single crystals, perovskite nano single crystals, perovskite nanowires, and perovskite micron wires; the light-emitting layer material of the perovskite light-emitting diode is a combination of perovskite material and metal oxides, insulating materials, colloidal quantum dots, organic polymers, organic small molecules, two-dimensional materials, phosphorescent materials, thermally activated delayed fluorescence materials, group III and V, and group II and VI.

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