Light-emitting assembly and preparation method therefor, and light-emitting chip structure and display substrate

Abstract

The present application relates to the technical field of display. Disclosed are a light-emitting assembly and a preparation method therefor, and a light-emitting chip structure and a display substrate. The light-emitting assembly comprises a light-emitting chip structure, a drive unit, a first substrate located at the side of the drive unit away from the light-emitting chip structure, a plurality of connection structures located in a plurality of through holes in the first substrate, and a plurality of pins electrically connected to the plurality of connection structures in a corresponding manner. The surface of each connection structure away from a pin and the surface of the first substrate away from the pins are located on the same plane, such that the surface flatness of the drive unit when the drive unit is prepared on the first substrate can be ensured, thereby improving the performance of the drive unit. Moreover, the first substrate provides a relatively good support force for both the drive unit and the light-emitting chip structure. Thus, even if a protective film is required to be peeled off prior to the formation of pins, the drive unit or the light-emitting chip structure cannot be overstretched and curled, thereby avoiding fractures, and thus ensuring the product yield.

Description

Light-emitting component and preparation method thereof, light-emitting chip structure, and display substrate Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting component and a preparation method thereof, a light-emitting chip structure, and a display substrate. Background Art

[0002] The display panel includes a driving backplane and a plurality of light-emitting components connected to the driving backplane, wherein the driving backplane can provide driving signals to the light-emitting components to make the light-emitting components emit light, thereby realizing display.

[0003] Summary of the Invention

[0004] The present application provides a light-emitting component and a method for manufacturing the same, a light-emitting chip structure, and a display substrate. The technical solutions are as follows:

[0005] In one aspect, a light emitting assembly is provided, comprising:

[0006] A light-emitting chip structure, comprising: a first electrode, a second electrode, and light-emitting units electrically connected to the first electrode and the second electrode respectively;

[0007] a driving unit, the driving unit comprising a third electrode, a fourth electrode, and a driving circuit, the third electrode and the fourth electrode being located on a side of the driving unit facing the light-emitting unit, the third electrode and the fourth electrode being electrically connected to the driving circuit, respectively, the third electrode being electrically connected to the first electrode, and the fourth electrode being electrically connected to the second electrode;

[0008] a first substrate, located on a side of the driving unit away from the light-emitting unit, the first substrate having a plurality of through holes;

[0009] a plurality of connection structures, each located in the plurality of through holes, the connection structures being electrically connected to the driving circuit;

[0010] and a plurality of pins, each of the pins being located on a side of the corresponding connecting structure away from the driving unit, the pins being electrically connected to the connecting structure;

[0011] Wherein, a surface of the connection structure away from the pins and a surface of the first substrate away from the pins are located in the same plane.

[0012] Optionally, a surface of the connection structure close to the pin and a surface of the first substrate close to the pin are located in the same plane.

[0013] Optionally, the first substrate is made of glass.

[0014] Optionally, the thickness of the first substrate ranges from 0.2 mm to 0.3 mm.

[0015] Optionally, the pin is in direct contact with the connection structure;

[0016] The material of the connection structure includes copper, and the material of the pin includes at least one of copper and tin.

[0017] Optionally, the light emitting assembly includes: a second substrate located on a side of the light emitting unit away from the driving unit; the light emitting assembly includes an isolation portion;

[0018] The isolation portion is located between the first substrate and the second substrate, and the isolation portion, the first substrate, and the second substrate constitute a closed space surrounding the light-emitting chip structure and the driving unit, or,

[0019] The isolation portion is located between the first substrate and the driving unit. The isolation portion, the driving unit, and the second substrate form a closed space surrounding the light-emitting chip structure.

[0020] Optionally, the isolation portion includes a first sub-isolation portion and a second sub-isolation portion, the first sub-isolation portion is arranged in contact with the second substrate; the second sub-isolation portion is arranged in contact with at least one of the first substrate and the driving unit;

[0021] One of the first sub-isolating portion and the second sub-isolating portion includes a groove portion, and at least a portion of the other of the first sub-isolating portion and the second sub-isolating portion is located in the groove portion.

[0022] Optionally, the isolation portion is made of light-absorbing material.

[0023] Optionally, there are multiple light-emitting units, and the multiple light-emitting units include a first color light-emitting unit, a second color light-emitting unit, and a third color light-emitting unit;

[0024] The first color, the second color and the third color are different from each other.

[0025] Optionally, the light-emitting chip structure includes a color conversion unit located on a side of the light-emitting unit away from the first substrate;

[0026] In which, the light-emitting unit includes: a plurality of sub-light-emitting functional layers, and a first semiconductor layer located on the light-emitting side of the plurality of sub-light-emitting functional layers, the first semiconductor layer includes: a plurality of connecting parts corresponding one-to-one to the plurality of sub-light-emitting functional layers, and an auxiliary part connected to the plurality of connecting parts, the connecting parts are connected to the corresponding sub-light-emitting functional layers, at least part of the auxiliary parts is located between adjacent connecting parts, and the auxiliary parts and the connecting parts are an integrated structure.

[0027] Optionally, the light-emitting chip structure includes a second substrate located on a side of the color conversion unit away from the driving unit;

[0028] The color conversion unit includes:

[0029] a light shielding layer located on one side of the second substrate, the light shielding layer having a plurality of light through holes;

[0030] a defining dam layer located on a side of the light-shielding layer facing away from the second substrate, the defining dam layer having a plurality of opening areas corresponding one-to-one to the plurality of light-through holes, and the plurality of opening areas corresponding one-to-one to the plurality of sub-light-emitting functional layers, wherein orthographic projections of the opening areas on the second substrate overlap with orthographic projections of corresponding light-through holes on the second substrate, and overlap with orthographic projections of corresponding sub-light-emitting functional layers on the substrate;

[0031] an optical functional layer located in the opening area, at least a portion of the optical functional layer being used to convert the color of light entering the optical functional layer;

[0032] And, a filter layer is located between the second substrate and the optical functional layer; the filter layer includes a plurality of filter units corresponding one-to-one to the plurality of light holes, and the orthographic projections of the filter units on the second substrate overlap with the orthographic projections of the corresponding light holes on the second substrate.

[0033] Optionally, the plurality of sub-light-emitting functional layers include: a first sub-light-emitting functional layer, a second sub-light-emitting functional layer and a third sub-light-emitting functional layer;

[0034] The multiple opening areas include: a first opening area, a second opening area and a third opening area. The first opening area is arranged opposite to the first sub-light-emitting functional layer, the second opening area is arranged opposite to the second sub-light-emitting functional layer, and the third opening area is arranged opposite to the third sub-light-emitting functional layer.

[0035] Optionally, the first electrode is connected to the first semiconductor layer;

[0036] The auxiliary portion includes a first auxiliary portion, a second auxiliary portion, and a third auxiliary portion; the orthographic projection of the first auxiliary portion on the second substrate overlaps with the orthographic projection of the first electrode on the second substrate; a portion of the second auxiliary portion is located between adjacent connecting portions, and another portion is located between the first auxiliary portion and the connecting portion; the third auxiliary portion is arranged around the first auxiliary portion, the second auxiliary portion, and the plurality of connecting portions, and the auxiliary portion is made of the same material as the connecting portion;

[0037] The sub-light-emitting functional layer includes: a second semiconductor layer and the light-emitting layer; the second electrode, the second semiconductor layer and the light-emitting layer are stacked in a direction perpendicular to and toward the second substrate; wherein the light-emitting layer is connected to the corresponding connecting portion in the first semiconductor layer.

[0038] Optionally, the first semiconductor layer includes: a first sublayer and a second sublayer stacked in a direction perpendicular to and toward the second substrate, the first sublayer being located between the second sublayer and the light-emitting layer, the first sublayer being made of N-type doped gallium nitride, and the second sublayer being a gallium nitride buffer layer;

[0039] The material of the second semiconductor layer includes P-type doped gallium nitride, and the light-emitting layer is a multi-quantum well layer.

[0040] Optionally, the light-emitting chip structure includes a first lens structure located between the light-emitting unit and the color conversion unit;

[0041] The orthographic projection of the first lens structure on the first substrate overlaps with the orthographic projection of at least one sub-light-emitting functional layer on the first substrate.

[0042] Optionally, the first lens structure is arranged in contact with the light emitting unit and is configured to converge the light emitted by the light emitting unit;

[0043] The light-emitting chip structure further includes a connection layer located between the light-emitting unit and the color conversion unit, and at least a portion of the connection layer is located on a side of the first lens structure away from the light-emitting unit.

[0044] Optionally, the first lens structure includes a first surface extending along the extension surface of the first semiconductor layer, and a second surface convex toward one side of the color conversion unit.

[0045] Optionally, there are multiple first lens structures;

[0046] The orthographic projection of each of the plurality of sub-light-emitting functional layers on the first substrate overlaps with the orthographic projection of at least one of the first lens structures on the first substrate;

[0047] There is a first space filled by the connection layer between each of the first lens structures and the color conversion unit, or at least one of the first lens structures is arranged in contact with the color conversion unit.

[0048] Optionally, the first lens structure and the color conversion unit are arranged in contact with each other;

[0049] The light-emitting chip structure further includes a connection layer located between the light-emitting unit and the color conversion unit, and at least a portion of the connection layer is located on a side of the first lens structure away from the color conversion unit.

[0050] Optionally, the first lens structure includes a first surface extending along the extension surface of the first substrate, and a second surface protruding toward one side of the light-emitting unit.

[0051] Optionally, there are multiple first lens structures;

[0052] The orthographic projection of each of the plurality of sub-light-emitting functional layers on the first substrate overlaps with the orthographic projection of at least one of the first lens structures on the first substrate;

[0053] There is a first gap filled by the connection layer between each of the first lens structures and the light-emitting unit, or at least one of the first lens structures is arranged in contact with the light-emitting unit.

[0054] Optionally, the light-emitting assembly includes a second substrate located on a side of the color conversion unit away from the driving unit, and a second lens structure located on a side of the second substrate away from the color conversion unit;

[0055] The orthographic projection of the second lens structure on the second substrate overlaps with the orthographic projection of the sub-light-emitting functional layer on the second substrate.

[0056] Optionally, the second lens structure includes a third surface extending along the extension surface of the second substrate, and a fourth surface convex toward a side away from the second substrate, and the third surface is closer to the second substrate than the fourth surface;

[0057] The second lens structure is used to converge the light emitted by the color conversion unit.

[0058] Optionally, the light-emitting chip structure further includes a first light-shielding structure;

[0059] The first light-shielding structure wraps around the edge of the first semiconductor layer, or

[0060] The first light shielding structure includes a first light shielding portion located at an edge of a surface of the first semiconductor layer close to the second substrate, or

[0061] The first light shielding structure includes a first light shielding portion located at an edge of a surface of the first semiconductor layer close to the second substrate, and a second light shielding portion located at an edge of a surface of the first semiconductor layer away from the second substrate.

[0062] Optionally, an edge of the first semiconductor layer is an inclined surface facing the first substrate.

[0063] Optionally, the light-emitting chip structure further includes a second light-shielding structure, and the second light-shielding structure is located on a surface of the driving unit and / or the first substrate facing the light-emitting chip structure;

[0064] An orthographic projection of the inclined surface on the first substrate overlaps with an orthographic projection of the second light-shielding structure on the first substrate.

[0065] Optionally, the second light-shielding structure is annular and includes an outer contour edge, and the orthographic projection of the inclined surface on the first substrate is located inside the orthographic projection of the outer contour edge on the first substrate.

[0066] Optionally, the light-emitting component includes a second substrate located on a side of the color conversion unit away from the driving unit;

[0067] The light-emitting component includes a third light-shielding structure, and the third light-shielding structure wraps the edge of the second substrate.

[0068] In another aspect, a method for preparing a light-emitting component is provided, wherein the method comprises:

[0069] Acquire a first target structure, the first target structure including a second substrate and a light-emitting chip structure located on the second substrate, the light-emitting chip structure including: a first electrode, a second electrode, and light-emitting units electrically connected to the first electrode and the second electrode respectively;

[0070] Acquire a second target structure, the second target structure comprising a temporary substrate, a first substrate located on the temporary substrate, and a driving unit located on a side of the first substrate away from the temporary substrate, the driving unit comprising a third electrode, a fourth electrode, and a driving circuit, the third electrode and the fourth electrode being electrically connected to the driving circuit, respectively; the first substrate having a plurality of through holes, each of the through holes having a connecting structure therein, the connecting structure being connected to the driving circuit;

[0071] Bonding the driving unit and the light-emitting chip structure together through a bonding process, electrically connecting the third electrode to the first electrode, and electrically connecting the fourth electrode to the second electrode;

[0072] removing the temporary substrate from one side of the first substrate to expose the connection structure;

[0073] A pin is formed on a side of the connection structure away from the driving unit, the pin is connected to the connection structure, and a surface of the connection structure away from the pin and a surface of the first substrate away from the pin are located in the same plane.

[0074] Optionally, obtaining the temporary substrate, the first substrate, and the connection structure in the second target structure includes:

[0075] obtaining a first initial substrate;

[0076] forming a plurality of through holes on the first initial substrate using a laser device;

[0077] forming a conductive material on the surface of the first initial substrate and in the plurality of through holes using an electroplating process;

[0078] Using a grinding device to grind the first initial substrate and the conductive material on the surface of the first initial substrate to obtain a first substrate, wherein the thickness of the first substrate is less than that of the first initial substrate, and the conductive material in the plurality of through holes of the first substrate constitutes a plurality of the connection structures;

[0079] The first substrate and a temporary substrate are bonded together, and the thickness of the temporary substrate is greater than that of the first substrate.

[0080] In another aspect, a method for preparing a light-emitting component is provided, the method comprising:

[0081] Acquire a first target structure, the first target structure including a second substrate and a light-emitting chip structure located on the second substrate, the light-emitting chip structure including: a first electrode, a second electrode, and light-emitting units electrically connected to the first electrode and the second electrode respectively;

[0082] Acquire a second target structure, the second target structure comprising a temporary substrate, a temporary adhesive material located on the temporary substrate, a plurality of pins, a first substrate, and a driving unit located on a side of the first substrate away from the temporary substrate, the driving unit comprising a third electrode, a fourth electrode, and a driving circuit, the third electrode and the fourth electrode being electrically connected to the driving circuit, respectively; the first substrate having a plurality of through holes, each of the through holes having a connecting structure therein, the connecting structure being connected to the driving circuit and the pins, and a surface of the connecting structure away from the pins and a surface of the first substrate away from the pins being coplanar;

[0083] Bonding the driving unit and the light-emitting chip structure together through a bonding process, electrically connecting the third electrode to the first electrode, and electrically connecting the fourth electrode to the second electrode;

[0084] The temporary substrate is removed from one side of the first substrate to expose the pins.

[0085] Optionally, obtaining the temporary substrate, temporary adhesive, multiple pins, first substrate, and connection structure in the second target structure includes:

[0086] obtaining a first initial substrate;

[0087] forming a plurality of through holes on the first initial substrate using a laser device;

[0088] forming a conductive material on the surface of the first initial substrate and in the plurality of through holes using an electroplating process;

[0089] Using a grinding device to grind the first initial substrate and the conductive material on the surface of the first initial substrate to obtain a first substrate, wherein the thickness of the first substrate is less than that of the first initial substrate, and the conductive material in the plurality of through holes of the first substrate constitutes a plurality of the connection structures;

[0090] A plurality of pins are formed on one side of the first substrate, and the pins are connected to the connection structure;

[0091] A temporary adhesive is used to bond the temporary substrate to a side of the first substrate where a plurality of pins are formed. The temporary adhesive covers the plurality of pins, and the thickness of the temporary adhesive is greater than or equal to the height of the pins.

[0092] On the other hand, a display substrate is provided, characterized in that the display substrate includes a driving backplane and the multiple light-emitting components described in the above aspects, wherein the light-emitting components are arrayed on the driving backplane, and the driving backplane is electrically connected to the light-emitting components and provides driving signals to the light-emitting components.

[0093] In another aspect, a light-emitting chip structure is provided, characterized in that the light-emitting chip structure includes: a first electrode, a second electrode, a light-emitting unit, and a color conversion unit located on the second substrate; the first electrode and the second electrode are located on a side of the light-emitting unit away from the color conversion unit, and are both electrically connected to the light-emitting unit; the color conversion unit is located on a light-emitting side of the light-emitting unit;

[0094] The light-emitting unit includes: a plurality of sub-light-emitting functional layers, and a first semiconductor layer located on the light-emitting side of the plurality of sub-light-emitting functional layers, the first semiconductor layer includes: a plurality of connecting portions corresponding one-to-one to the plurality of sub-light-emitting functional layers, and an auxiliary portion connected to the plurality of connecting portions, the connecting portions being connected to the corresponding sub-light-emitting functional layers, at least a portion of the auxiliary portion being located between adjacent connecting portions, and the auxiliary portion and the connecting portion being an integral structure;

[0095] The light-emitting chip structure further includes: a first lens structure located between the light-emitting unit and the color conversion unit, wherein an orthographic projection of the first lens structure on the first substrate overlaps with an orthographic projection of at least one sub-light-emitting functional layer on the first substrate.

[0096] Optionally, the first lens structure is arranged in contact with the light emitting unit and is configured to converge the light emitted by the light emitting unit;

[0097] The light-emitting chip structure further includes a connection layer located between the light-emitting unit and the color conversion unit, and at least a portion of the connection layer is located on a side of the first lens structure away from the light-emitting unit.

[0098] Optionally, the first lens structure includes a first surface extending along the extension surface of the first semiconductor layer, and a second surface convex toward one side of the color conversion unit.

[0099] Optionally, there are multiple first lens structures;

[0100] The orthographic projection of each of the plurality of sub-light-emitting functional layers on the second substrate overlaps with the orthographic projection of at least one of the first lens structures on the second substrate;

[0101] There is a first space filled by the connection layer between each of the first lens structures and the color conversion unit, or at least one of the first lens structures is arranged in contact with the color conversion unit.

[0102] Optionally, the first lens structure and the color conversion unit are arranged in contact with each other;

[0103] The light-emitting chip structure further includes a connection layer located between the light-emitting unit and the color conversion unit, and at least a portion of the connection layer is located on a side of the first lens structure away from the color conversion unit.

[0104] Optionally, the first lens structure includes a first surface extending along the extension surface of the second substrate, and a second surface protruding toward one side of the light-emitting unit.

[0105] Optionally, there are multiple first lens structures;

[0106] The orthographic projection of each of the plurality of sub-light-emitting functional layers on the second substrate overlaps with the orthographic projection of at least one of the first lens structures on the second substrate;

[0107] There is a first space filled by the color conversion unit between each of the first lens structures and the color conversion unit, or at least one of the first lens structures is arranged in contact with the light-emitting unit.

[0108] Optionally, the base angle α of the first lens structure satisfies:

[0109] in, n1 is the refractive index of the first semiconductor layer, n2 is the refractive index of the film layer of the first lens structure away from the first semiconductor layer and in contact with the first lens structure, n3 is the refractive index of the first lens structure, and n3 is greater than or equal to n1 and greater than n2.

[0110] Optionally, the base angle α of the first lens structure satisfies:

[0111] in, n1 is the refractive index of the first semiconductor layer, n2 is the refractive index of the film layer of the first lens structure away from the first semiconductor layer and in contact with the first lens structure, n3 is the refractive index of the first lens structure, and n3 is greater than or equal to n1 and greater than n2.

[0112] Optionally, the light-emitting chip structure further includes a first light-shielding structure;

[0113] The first light-shielding structure wraps around the edge of the first semiconductor layer, or

[0114] The first light shielding structure includes a first light shielding portion located at an edge of a surface of the first semiconductor layer close to the second substrate, or

[0115] The first light shielding structure includes a first light shielding portion located at an edge of a surface of the first semiconductor layer close to the second substrate, and a second light shielding portion located at an edge of a surface of the first semiconductor layer away from the second substrate.

[0116] On the other hand, a display substrate is provided, characterized in that the display substrate includes a driving backplane and the multiple light-emitting chip structures described in the above aspects, wherein the multiple light-emitting chip structures are arrayed on the driving backplane, and the driving backplane is connected to the light-emitting chip structure and provides a driving signal to the light-emitting chip structure.

[0117] In another aspect, a display substrate is provided, characterized in that the display substrate includes a driving backplane and the multiple light-emitting chip structures described in the above aspect, wherein the multiple light-emitting chip structures are arranged in an array on the driving backplane, and the driving backplane is connected to the light-emitting chip structures and provides driving signals to the light-emitting chip structures;

[0118] Among them, the edge of the first semiconductor layer is a bevel, and the second shading structure included in the light-emitting chip structure is located on the surface of the driving backplane facing the light-emitting chip structure, and the orthographic projection of the bevel on the driving backplane overlaps with the orthographic projection of the second shading structure on the driving backplane.

[0119] Optionally, the second light-shielding structure is annular and includes an outer contour edge, and the orthographic projection of the inclined surface on the driving backplate is located inside the orthographic projection of the outer contour edge on the driving backplate.

[0120] Optionally, a length h of the second light-shielding structure extending beyond an edge of the first semiconductor layer on a side close to the driving backplane satisfies:

[0121] Wherein, d is the distance between the surface of the first semiconductor layer away from the driving backplane and the surface of the second light-shielding structure close to the first semiconductor layer, and γ is the angle between the inclined surface and the surface of the first semiconductor layer away from the driving backplane.

[0122] Optionally, the range of γ is 30 degrees to 80 degrees. BRIEF DESCRIPTION OF THE DRAWINGS

[0123] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0124] FIG1 is a schematic structural diagram of a light-emitting component provided in an embodiment of the present application;

[0125] FIG2 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0126] FIG3 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0127] FIG4 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0128] FIG5 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0129] FIG6 is a schematic diagram of a first sub-isolating portion and a second sub-isolating portion provided in an embodiment of the present application;

[0130] FIG7 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0131] FIG8 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0132] FIG9 is a schematic diagram of another first sub-isolating portion and a second sub-isolating portion provided in an embodiment of the present application;

[0133] FIG10 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0134] FIG11 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0135] FIG12 is a schematic diagram of another first sub-isolating portion and a second sub-isolating portion provided in an embodiment of the present application;

[0136] FIG13 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0137] FIG14 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0138] FIG15 is a schematic diagram of another first sub-isolating portion and a second sub-isolating portion provided in an embodiment of the present application;

[0139] FIG16 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0140] FIG17 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0141] FIG18 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0142] FIG19 is a schematic structural diagram of a light-emitting chip structure provided in an embodiment of the present application;

[0143] FIG20 is a top view of a first semiconductor layer provided in an embodiment of the present application;

[0144] FIG21 is a diagram showing an effect of generating an optical waveguide phenomenon inside a first semiconductor layer according to an embodiment of the present application;

[0145] FIG22 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0146] FIG23 is a top view of another light-emitting chip structure provided in an embodiment of the present application;

[0147] FIG24 is a schematic diagram of the film structure of the light-emitting chip structure 100 at AA′ shown in FIG23 ;

[0148] FIG25 is a schematic diagram of the film structure of the light-emitting chip structure 100 at position BB′ shown in FIG23 ;

[0149] FIG26 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0150] FIG27 is a top view of a first electrode, a second electrode, and a light-emitting unit located on a connecting layer provided in an embodiment of the present application;

[0151] FIG28 is a schematic diagram of the film layer structure at CC' in FIG27;

[0152] FIG29 is a top view of another first semiconductor layer provided in an embodiment of the present application;

[0153] FIG30 is a top view of another first electrode, a second electrode, and a light-emitting unit provided in an embodiment of the present application;

[0154] FIG31 is a schematic diagram of the film layer structure at DD' in FIG30;

[0155] FIG32 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0156] FIG33 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0157] FIG34 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0158] FIG35 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0159] FIG36 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0160] FIG37 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0161] FIG38 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0162] FIG39 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0163] FIG40 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0164] FIG41 is a schematic diagram of a partial structure of a first semiconductor layer provided in an embodiment of the present application;

[0165] FIG42 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0166] FIG43 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0167] FIG44 is a top view of a first semiconductor layer and a second light-shielding structure provided in an embodiment of the present application;

[0168] FIG45 is a schematic structural diagram of another light-emitting chip structure provided in an embodiment of the present application;

[0169] FIG46 is a schematic structural diagram of another light-emitting assembly provided in an embodiment of the present application;

[0170] FIG47 is a flow chart of a method for preparing a light-emitting component provided in an embodiment of the present application;

[0171] FIG48 is a flow chart of obtaining a light-emitting unit and a first lens structure according to an embodiment of the present application;

[0172] FIG49 is a flow chart of obtaining a second substrate and a color conversion unit according to an embodiment of the present application;

[0173] FIG50 is a schematic structural diagram of a second substrate and a color conversion unit provided in an embodiment of the present application;

[0174] FIG51 is a flow chart of obtaining a temporary substrate, a first substrate, and a connection structure according to an embodiment of the present application;

[0175] FIG52 is a flow chart of another method for obtaining a temporary substrate, a first substrate, and a connection structure according to an embodiment of the present application;

[0176] FIG53 is a schematic diagram of bonding a driving unit and a light-emitting chip structure according to an embodiment of the present application;

[0177] FIG54 is a schematic diagram of removing a temporary substrate provided in an embodiment of the present application;

[0178] FIG55 is a schematic diagram of forming a pin according to an embodiment of the present application;

[0179] FIG56 is a flow chart of another method for preparing a light-emitting component provided in an embodiment of the present application;

[0180] FIG57 is a flow chart of obtaining a temporary substrate, a temporary adhesive, a plurality of pins, a first substrate, and a connection structure according to an embodiment of the present application;

[0181] FIG58 is a schematic diagram of a new project of multiple pins on one side of a first substrate provided by an embodiment of the present application;

[0182] FIG59 is a schematic diagram of a temporary adhesive and a temporary substrate formed on a side of a first substrate having a plurality of pins formed thereon, provided by an embodiment of the present application;

[0183] FIG60 is a schematic diagram of bonding a driving unit and a light-emitting chip structure according to an embodiment of the present application;

[0184] FIG61 is a schematic diagram of removing a temporary substrate from one side of a first substrate according to an embodiment of the present application;

[0185] FIG62 is a schematic structural diagram of a display substrate provided in an embodiment of the present application;

[0186] FIG63 is a top view of a display substrate provided in an embodiment of the present application;

[0187] FIG64 is a schematic diagram of light rays when the first lens structure is approximated as a triangle, provided by an embodiment of the present application;

[0188] FIG65 is another schematic diagram of light rays when the first lens structure is approximated as a triangle, provided by an embodiment of the present application;

[0189] FIG66 is a schematic structural diagram of a display substrate provided in an embodiment of the present application;

[0190] FIG67 is a schematic structural diagram of another display substrate provided in an embodiment of the present application;

[0191] Figure 68 is a schematic diagram of light emitted from an inclined surface provided in an embodiment of the present application. DETAILED DESCRIPTION

[0192] In order to make the objectives, technical solutions and advantages of this application clearer, the implementation methods of this application will be further described in detail below with reference to the accompanying drawings.

[0193] A micro light emitting diode (Micro LED) display substrate generally includes a driving backplane, a driving unit integrated on the driving backplane, and a light-emitting chip bonded to the driving unit. When preparing the Micro LED display substrate, in order to achieve color display, it is necessary to transfer and bond light-emitting chips of different colors to a driving backplane integrated with a driving unit, and light-emitting chips of the same color are transferred at the same time, and light-emitting chips of different colors are transferred in batches. That is, the number of transfers is the number of colors of the light-emitting chip. Optionally, the light-emitting chip includes light-emitting chips of three colors, such as a red (red, R) light-emitting chip, a green (green, G) light-emitting chip, and a blue (blue) light-emitting chip, and thus three transfers are required. This solution requires more transfers when preparing the Micro LED display substrate, and the process is more complicated.

[0194] Furthermore, to reduce the manufacturing cost of Micro LED display substrates, the driver backplane is designed to be small (because if it is too large, if some of the light-emitting chips fail to emit light after transfer, the entire product will be scrapped, resulting in high costs). Therefore, if this solution needs to achieve a large-scale display, it can only be achieved through splicing, which results in poor display quality.

[0195] The red, green and blue micro-display chip (RGB Micro LED) is bonded to a driving unit to form a new active-matrix light-emitting diode (AM-LED) chip with its own driving circuit. The AM-LED chip includes light-emitting chips of three colors, red, green and blue, and a driving unit for driving the light-emitting chip. Each light-emitting chip can include a color conversion unit, and each light-emitting chip can be driven independently in a partition to achieve a colored display. Furthermore, depending on the size of the display substrate that needs to be prepared, a corresponding number of AM-LED chips are used to perform a one-time transfer bonding with the driving backplane to achieve the preparation of a glass-based colored light-emitting diode (LED) display substrate. At the same time, this solution only requires one transfer process, and the process is relatively simple. In addition, large-size displays can be achieved without splicing, which can improve the glass utilization rate of the driving backplane, thereby reducing costs.

[0196] Furthermore, this AM-LED chip utilizes dual electrical and optical testing technology to select chips that meet both optical and driving performance requirements. This improves chip yield on the display substrate compared to solutions that integrate the driver circuitry onto the driver backplane to form the display substrate, and also facilitates the repair and replacement of defective chips.

[0197] However, due to the insufficient supporting force of the substrate on the driving unit side, the device is easily pulled and curled when the protective film is removed, resulting in breakage, which affects the product yield.

[0198] FIG1 is a schematic diagram of the structure of a light emitting assembly provided in an embodiment of the present application. Referring to FIG1 , the light emitting assembly 000 includes: a light emitting chip structure 100 , a driving unit 200 , a first substrate 300 , a plurality of connection structures 400 , and a plurality of pins 500 .

[0199] The light-emitting chip structure 100 includes a first electrode 101 , a second electrode 102 , and a light-emitting unit 103 electrically connected to the first electrode 101 and the second electrode 102 .

[0200] The driving unit 200 includes a third electrode 201, a fourth electrode 202, and a driving circuit 203. The third electrode 201 and the fourth electrode 202 are both located on the side of the driving unit 200 facing the light-emitting unit 103, i.e., the third electrode 201 and the fourth electrode 202 are closer to the light-emitting unit 103 than the driving circuit 203. The third electrode 201 and the fourth electrode 202 are respectively electrically connected to the driving circuit 203. The third electrode 201 is electrically connected to the first electrode 101, and the fourth electrode 202 is electrically connected to the second electrode 102.

[0201] The first substrate 300 is located on a side of the driving unit 200 away from the light-emitting unit 103 and has a plurality of through-holes 300a. A plurality of connecting structures 400 are located within the through-holes 300a, electrically connecting the connecting structures 400 to the driving circuit 203. Each pin 500 is located on a side of the corresponding connecting structure 400 away from the driving unit 200, electrically connecting the pin 500 to the connecting structure 400.

[0202] In an embodiment of the present application, the multiple pins 500 included in the light-emitting component 000 can be used to receive driving signals provided by the driving backplane, so that the multiple pins 500 can provide driving signals to the driving unit 200, so that the driving unit 200 drives the light-emitting unit 103 in the light-emitting chip structure 100 to emit light.

[0203] The surface of the connection structure 400 away from the pins 500 and the surface of the first substrate 300 away from the pins 500 are located in the same plane, thereby ensuring the surface flatness of the drive unit 200 when it is manufactured on the first substrate 300, thereby improving the performance of the drive unit 200. In other words, even if the connection structure 400 is located within the through hole 300a of the first substrate 300, the surface of the first substrate 300 away from the pins 500 designed with the connection structure 400 can be made flat. For example, the surface of the connection structure 400 away from the pins 500 and the surface of the first substrate 300 away from the pins 500 can be obtained by grinding.

[0204] In the embodiment of the present application, the first substrate 300 can be a rigid substrate, and the first substrate 300 provides good support for the driving unit 200 and the light-emitting chip structure 100. Even if the protective film needs to be removed before forming the pins 500, the driving unit 200 or the light-emitting chip structure 100 will not be pulled or curled, thereby ensuring product yield.

[0205] In summary, the embodiment of the present application provides a light-emitting component, which includes a light-emitting chip structure, a driving unit, a first substrate located on a side of the driving unit away from the light-emitting chip structure, a plurality of connection structures located in a plurality of through holes of the first substrate, and a plurality of pins electrically connected to the plurality of connection structures. The surface of the connection structure away from the pins and the surface of the first substrate away from the pins are located in the same plane, which can ensure the surface flatness of the driving unit when it is prepared on the first substrate, thereby improving the performance of the driving unit. In addition, the first substrate has good support for the driving unit and the light-emitting chip structure. Even if the protective film needs to be torn off before the pins are formed, the driving unit or the light-emitting chip structure will not be pulled and curled, resulting in breakage, thereby ensuring the yield of the product.

[0206] Optionally, the surface of the connection structure 400 close to the pin 500 and the surface of the first substrate 300 close to the pin 500 are located in the same plane. That is, in the embodiment of the present application, both surfaces of the first substrate 300 close to or away from the pin 500 are planes.

[0207] Optionally, the first substrate 300 may be made of glass. Glass is stronger than flexible materials and has higher support performance than flexible materials. Therefore, by designing the first substrate 300 to be made of glass, the support force of the first substrate 300 for the driving unit 200 and the light-emitting chip structure 100 can be improved.

[0208] Optionally, the thickness of the first substrate 300 ranges from 0.2 mm (millimeter) to 0.3 mm. For example, the thickness of the first substrate 300 is 0.25 mm.

[0209] Typically, the material of the connection structure is Ti (titanium), but when forming the pin 500, due to the poor adhesion of the nickel-plated gold on the Ti surface, the connection reliability of the pin 500 and the connection structure will be low. In an embodiment of the present application, the pin 500 is electrically connected to the connection structure 400 by direct contact. The material of the connection structure 400 includes copper (Cu), and the material of the pin 500 includes at least one of copper (Cu) and tin (Sn). Since the material of the connection structure 400 includes copper, and copper has better adhesion to the nickel-plated gold on its surface than titanium, the connection reliability of the pin 500 and the connection structure 400 can be improved.

[0210] Optionally, the material of the connection structure 400 including copper may mean that the material of the connection structure 400 may only include copper, or the material of the connection structure 400 may include other materials in addition to copper. Of course, in order to ensure the connection reliability between the connection structure 400 and the pin 500, the copper content of the material of the connection structure 400 may be set to be relatively high (e.g., greater than 90%).

[0211] Figure 2 is a schematic diagram of the structure of another light-emitting assembly provided in an embodiment of the present application. Referring to Figure 2 , the light-emitting assembly includes a second substrate 600 located on a side of the light-emitting unit 103 away from the driving unit 200. The light-emitting assembly also includes an isolation portion 700. The isolation portion 700 can be made of a non-metallic material, such as resin.

[0212] Referring to FIG. 2 , the isolation portion 700 is located between the first substrate 300 and the second substrate 600. The isolation portion 700, the first substrate 300, and the second substrate 600 form a sealed space surrounding the light-emitting chip structure 100 and the driver unit 200. For example, the first substrate 300 has a portion extending beyond the driver unit 200, and the second substrate 600 has a portion extending beyond the light-emitting chip structure 100. One end of the isolation portion 700 contacts the portion of the first substrate 300 extending beyond the driver unit 200, while the other end contacts the portion of the second substrate 600 extending beyond the light-emitting chip structure 100. As a result, the sealed space formed by the isolation portion 700, the first substrate 300, and the second substrate 600 surrounds the light-emitting chip structure 100 and the driver unit 200.

[0213] Since the light-emitting chip structure 100 and the driving unit 200 are both located in a confined space, the light-emitting chip structure 100 and the driving unit 200 can be protected. Furthermore, it can prevent external solutions from penetrating into the confined space and affecting related structures located in the confined space. Therefore, when a plurality of pins 500 are prepared on the side of the first substrate 300 away from the driving unit 200 through an electroplating process or a chemical plating process, even if the entire assembly needs to be placed in a specific solution, the specific solution will not be immersed in the confined space, causing damage to the electrode connection in the confined space, and the luminous effect of the light-emitting component 000 can be guaranteed.

[0214] Referring to FIG3 , the isolation portion 700 is located between the first substrate 300 and the driver unit 200. The isolation portion 700, the driver unit 200, and the second substrate 600 form a sealed space surrounding the light-emitting chip structure 100. For example, the driver unit 200 has a portion extending beyond the light-emitting chip structure 100, and the second substrate 600 has a portion extending beyond the light-emitting chip structure 100. One end of the isolation portion 700 contacts the portion of the driver unit 200 extending beyond the light-emitting chip structure 100, while the other end contacts the portion of the second substrate 600 extending beyond the light-emitting chip structure 100. As a result, the sealed space formed by the isolation portion 700, the driver unit 200, and the second substrate 600 surrounds the light-emitting chip structure 100.

[0215] Since the light-emitting chip structure 100 is located in a confined space, it can protect the light-emitting chip structure 100. Furthermore, it can prevent external solutions from penetrating into the confined space and affecting related structures located in the confined space. Therefore, when a plurality of pins 500 are prepared on the side of the first substrate 300 away from the driving unit 200 through an electroplating process or a chemical plating process, even if the entire component needs to be placed in a specific solution, the specific solution will not be immersed in the confined space and cause damage to the electrode connection in the confined space, thereby ensuring the luminous effect of the light-emitting component 000.

[0216] 4 and 5 , the isolation portion 700 includes a first sub-isolating portion 701 and a second sub-isolating portion 702. The first sub-isolating portion 701 is disposed in contact with the second substrate 600, and the second sub-isolating portion 702 is disposed in contact with at least one of the first substrate 300 and the drive unit 200. For example, in FIG4 , the second sub-isolating portion 702 is disposed in contact with the first substrate 300. For another example, in FIG5 , the second sub-isolating portion 702 is disposed in contact with the drive unit 200.

[0217] Optionally, one of the first sub-isolating portion 701 and the second sub-isolating portion 702 may include a groove portion, and at least a portion of the other one of the first sub-isolating portion 701 and the second sub-isolating portion 702 is located in the groove portion.

[0218] As an optional implementation, the cross-sectional area of ​​the first sub-isolating portion 701 in a direction perpendicular to the thickness of the second substrate 600 decreases as the distance from the second substrate 600 increases. That is, the area of ​​the orthographic projection of the side of the first sub-isolating portion 701 away from the second substrate 600 on the second substrate 600 is smaller than the area of ​​the orthographic projection of the side of the first sub-isolating portion 701 closer to the second substrate 600 on the second substrate 600. Furthermore, the orthographic projection of the side of the first sub-isolating portion 701 away from the second substrate 600 on the first substrate 300 is within the orthographic projection of the side of the first sub-isolating portion 701 closer to the second substrate 600 on the second substrate 600.

[0219] Optionally, referring to Figures 4 to 6 , the side of the first sub-isolating portion 701 includes at least a first side a1, one end of which is connected to a side of the first sub-isolating portion 701 away from the second substrate 600, and the other end of which is connected to a side of the first isolating portion 700 close to the second substrate 600. In other words, the side of the first sub-isolating portion 701 is a flat side with a gradual transition.

[0220] Alternatively, with reference to Figures 7 to 9, the side of the first sub-isolating portion 701 includes a first side a1, a second side a2, and a third side a3, which are connected in sequence. The extension direction of the second side a2 intersects with the extension direction of the first side a1 and the extension direction of the third side a3. One end of the first side a1 is connected to the side of the first sub-isolating portion 701 away from the second substrate 600, and the other end is connected to one end of the second side a2. The other end of the second side a2 is connected to one end of the third side a3, and the other end of the third side a3 is connected to the side of the first sub-isolating portion 701 close to the second substrate 600. In other words, the side of the first sub-isolating portion 701 has a stepped structure.

[0221] Furthermore, the second sub-isolating portion 702 includes a first base portion b1 and a groove portion b2. The groove portion b2 is located on the first base portion b1. Furthermore, the groove portion b2 is located on the surface of the first base portion b1 near the first sub-isolating portion 701. The orthographic projection of the groove portion b2 on the first substrate 300 is located within the orthographic projection of the first base portion b1 on the first substrate 300. The area enclosed by the outer contour of the cross section of the first base portion b1, perpendicular to the thickness of the first substrate 300, decreases with increasing distance from the first substrate 300.

[0222] That is, ignoring the groove b2, the area of ​​the orthographic projection of the side of the first base portion b1 away from the first substrate 300 on the first substrate 300 is smaller than the area of ​​the orthographic projection of the side of the first base portion b1 closer to the first substrate 300 on the first substrate 300. Furthermore, the orthographic projection of the side of the first base portion b1 away from the first substrate 300 on the first substrate 300 is within the orthographic projection of the side of the first base portion b1 closer to the first substrate 300 on the first substrate 300.

[0223] As another optional implementation, referring to Figures 10 to 12 , the first sub-isolating portion 701 includes a second base portion b3 and a groove portion b2. The groove portion b2 is located on the second base portion b3. Furthermore, the groove portion b2 is located on the surface of the second base portion b3 near the second sub-isolating portion 702. The orthographic projection of the groove portion b2 on the second substrate 600 is located within the orthographic projection of the second base portion b3 on the second substrate 600. The area enclosed by the outer contour of the cross section of the second base portion b3 in the direction perpendicular to the thickness of the second substrate 600 decreases as the distance from the second substrate 600 increases.

[0224] That is, ignoring the groove b2, the area of ​​the orthographic projection of the side of the second base portion b3 away from the second substrate 600 on the second substrate 600 is smaller than the area of ​​the orthographic projection of the side of the second base portion b3 closer to the second substrate 600 on the second substrate 600. Furthermore, the orthographic projection of the side of the second base portion b3 away from the second substrate 600 on the second substrate 600 is within the orthographic projection of the side of the second base portion b3 closer to the second substrate 600 on the second substrate 600.

[0225] Furthermore, the cross-sectional area of ​​the second sub-isolating portion 702 in a direction perpendicular to the thickness of the first substrate 300 decreases as the distance from the first substrate 300 increases. That is, the area of ​​the orthographic projection of the side of the second sub-isolating portion 702 farther from the first substrate 300 on the first substrate 300 is smaller than the area of ​​the orthographic projection of the side of the second sub-isolating portion 702 closer to the first substrate 300 on the first substrate 300. Furthermore, the orthographic projection of the side of the second sub-isolating portion 702 farther from the first substrate 300 on the first substrate 300 is located within the orthographic projection of the side of the second sub-isolating portion 702 closer to the first substrate 300 on the first substrate 300.

[0226] Optionally, referring to Figures 10 to 12 , the side edges of the second sub-isolating portion 702 include at least a first edge a1, one end of which is connected to a side of the second sub-isolating portion 702 away from the first substrate 300, and the other end of which is connected to a side of the second isolating portion 700 closer to the first substrate 300. In other words, the side edges of the second sub-isolating portion 702 are flat side edges with a gradual transition.

[0227] Alternatively, referring to Figures 13 to 15 , the side of the second sub-isolating portion 702 includes a first side a1, a second side a2, and a third side a3, which are connected in sequence. The extension direction of the second side a2 intersects with the extension direction of the first side a1 and the extension direction of the third side a3. One end of the first side a1 is connected to the side of the second sub-isolating portion 702 away from the first substrate 300, and the other end is connected to one end of the second side a2. The other end of the second side a2 is connected to one end of the third side a3, and the other end of the third side a3 is connected to the side of the second sub-isolating portion 702 closer to the first substrate 300. In other words, the side of the second sub-isolating portion 702 has a stepped structure.

[0228] The coordination between the first sub-isolating portion 701 and the second sub-isolating portion 702 can improve the alignment accuracy during the bonding connection between the light-emitting chip structure 100 and the driving unit 200. Furthermore, the coordination between the first sub-isolating portion 701 and the second sub-isolating portion 702 can extend the immersion path of the specific solution, preventing the specific solution from infiltrating into the confined space through the gap between the first sub-isolating portion 701 and the second sub-isolating portion 702.

[0229] Optionally, a sealant may be filled between the first sub-isolating portion 701 and the second sub-isolating portion 702 to ensure close contact between the first sub-isolating portion 701 and the second sub-isolating portion 702, thereby ensuring a sealing effect of the enclosed space.

[0230] In the embodiment of the present application, referring to FIG16 , the material of the isolation portion 700 can be a light-absorbing material. This allows a portion of the light emitted by the light-emitting chip structure 100 that strikes the isolation portion 700 to be absorbed by the isolation portion 700, preventing the light emitted by the light-emitting chip structure 100 from escaping from the sides and resolving the light leakage issue in the light-emitting component 000. Referring to FIG16 , the edge of the first semiconductor layer 1031 is inclined toward the first substrate 300, allowing light emitted by the light-emitting chip structure 100 to more easily strike a portion of the isolation portion 700 that is relatively far from the second substrate 600.

[0231] Thus, when the isolating portion 700 includes a first sub-isolating portion 701 and a second sub-isolating portion 702, the material of the second sub-isolating portion 702 (which is farther away from the second substrate 600 than the first sub-isolating portion 701) can be a light-absorbing material, while there is no restriction on the material of the first sub-isolating portion 701. For example, the material of the first sub-isolating portion 701 can be a transparent material, a light-absorbing material, or a light-reflecting material.

[0232] Optionally, referring to Figure 17, if the material of the second sub-isolation portion 702 in the isolation portion 700 is a light-absorbing material, and the material of the first sub-isolation portion 701 is not a light-absorbing material, then in order to ensure that all light emitted from the inclined surface of the first semiconductor layer 1031 can be absorbed by the second sub-isolation portion 702, the second sub-isolation portion 702 can be higher than the surface of the first semiconductor layer 1031 close to the second substrate 600, thereby preventing light from irradiating the first sub-isolation portion 701 and causing light leakage.

[0233] Furthermore, referring to FIG18 , assuming that the isolation portion 700, the driving unit 200, and the second substrate 600 form a confined space, then within the confined space, the surface of the driving unit 200 facing the isolation portion 700 has a light-absorbing structure M. This light-absorbing structure M can further absorb light emitted from the inclined surface, further preventing light leakage. Alternatively, assuming that the isolation portion 700, the first substrate 300, and the second substrate 600 form a confined space, then within the confined space, the surface of the first substrate 300 facing the isolation portion 700 has a light-absorbing structure M. This light-absorbing structure M can further absorb light emitted from the inclined surface, further preventing light leakage.

[0234] In an embodiment of the present application, the light-emitting chip structure 100 may include a plurality of light-emitting units 103. The plurality of light-emitting units 103 include a first color light-emitting unit, a second color light-emitting unit, and a third color light-emitting unit. The first color, the second color, and the third color are different from each other. For example, the first color is red (red, R), the second color is green (green, G), and the third color is blue (blue, B). Optionally, the unit may be a light-emitting diode (LED).

[0235] As a possible scenario, the light-emitting chip structure 100 can be an all-in-one light-emitting chip having multiple light-emitting units 103. The light-emitting colors of each light-emitting unit 103 are different, and each light-emitting unit 103 has an independent epitaxial structure. For example, the light-emitting chip structure 100 includes an epitaxial structure of a red light-emitting unit (R-LED), an epitaxial structure of a green light-emitting unit (G-LED), and an epitaxial structure of a blue light-emitting unit (B-LED). In addition, the second electrode 102 corresponding to each light-emitting unit 103 can be provided with a different driving signal by the driving unit 200, and the first electrodes 101 can be independent of each other or electrically connected to each other.

[0236] As another possible situation, the light-emitting chip structure 100 may have a light-emitting chip with multiple independent light-emitting units 103 , and different light-emitting units 103 are independently controlled by the driving unit 200 .

[0237] Figure 19 is a schematic diagram of a light-emitting chip structure provided in an embodiment of the present application. Referring to Figure 19 , the light-emitting chip structure 100 includes a color conversion unit 104 located on the side of the light-emitting unit 103 that is away from the first substrate 300. Specifically, the light-emitting unit 103 can be located on the side of the color conversion unit 104 that is closer to the first substrate 300. In this case, light emitted by the light-emitting unit 103 can be directed toward the color conversion unit 104, then pass through the color conversion unit 104 before being emitted.

[0238] The light-emitting unit 103 in the light-emitting chip structure 100 may include: multiple sub-light-emitting functional layers 103a, and a first semiconductor layer 1031 located on the light-emitting side of the multiple sub-light-emitting functional layers 103a. To more clearly illustrate the structure of the first semiconductor layer 1031, please refer to Figure 20, which is a top view of a first semiconductor layer provided in an embodiment of the present application. The first semiconductor layer 1031 may include: multiple connecting portions 10311 corresponding one-to-one to the multiple sub-light-emitting functional layers 103a, and auxiliary portions 10312 connected to the multiple connecting portions 10311.

[0239] In which, each connecting portion 10311 in the first semiconductor layer 1031 can be connected to the corresponding sub-light-emitting functional layer 103a, and the outer boundary of the orthographic projection of each connecting portion 10311 on the second substrate 600 can completely coincide with the outer boundary of the orthographic projection of the corresponding sub-light-emitting functional layer 103a on the first substrate 300.

[0240] In the present application, the multiple connecting portions 10311 and the auxiliary portions 10312 in the first semiconductor layer 1031 form an integral structure, and the material of the connecting portions 10311 in the first semiconductor layer 1031 can be the same as the material of the auxiliary portions 10312. It is understood that the multiple connecting portions 10311 and the auxiliary portions 10312 in the first semiconductor layer 1031 are arranged in a direction parallel to the extended surface of the second substrate 600, and the first semiconductor layer 1031 is a planar structure provided as a whole layer. All portions of the first semiconductor layer 1031 except the multiple connecting portions 10311 are auxiliary portions 10312. The multiple connecting portions 10311 can be connected by the auxiliary portions 10312 in the first semiconductor layer 1031.

[0241] In the embodiment of the present application, light emitted from the sub-light-emitting functional layer 103a in the light-emitting unit 103 first passes through the first semiconductor layer 1031 before being emitted toward the color conversion unit 104 and the second substrate 600. However, because the first semiconductor layer 1031 is a planar structure arranged as a whole layer, some light emitted into the interior of the first semiconductor layer 1031 is very likely to generate a light waveguide phenomenon within the first semiconductor layer 1031. For example, please refer to Figure 21, which is an effect diagram of the light waveguide phenomenon generated within the first semiconductor layer provided by the embodiment of the present application. Some light emitted into the first semiconductor layer 1031 can undergo multiple total reflections back and forth between two oppositely arranged planes in the first semiconductor layer 1031, and then be transmitted laterally, and finally be emitted from the edge of the first semiconductor layer 1031. After the light waveguide phenomenon occurs in the first semiconductor layer 1031 , light emitted from the edge of the first semiconductor layer 1031 may not be absorbed by the light shielding layer 1041 in the color conversion unit 104 , thereby causing the light emitting chip structure 100 to easily leak light.

[0242] To this end, an isolation portion 700 can be disposed around the light-emitting chip structure 100, and the isolation portion 700 can be made of a light-absorbing material. The isolation portion 700 is used to absorb light emitted by the sub-light-emitting functional layer 103a that propagates laterally within the first semiconductor layer 1031. In other words, after light emitted by the sub-light-emitting functional layer 103a enters the first semiconductor layer 1031 and generates an optical waveguide phenomenon within the first semiconductor layer 1031, the light that propagates laterally within the first semiconductor layer 1031 can be absorbed by the isolation portion 700.

[0243] In this case, even if the light entering the first semiconductor layer 1031 produces a light waveguide phenomenon, the isolation part 700 can be used to block the light emitted from the edge of the first semiconductor layer 1031, thereby effectively reducing the probability of light leakage in the light-emitting chip structure 100.

[0244] Exemplarily, the multiple light-emitting functional layers in the light-emitting unit 103 are each configured to emit a first light beam, each of which includes at least one of blue light and ultraviolet light. Under the action of the color conversion unit 104, the light-emitting chip structure 100 can emit at least one of red light, green light, and blue light. Here, because the isolation portion 700 absorbs the light beam emitted by the sub-light-emitting functional layer 103a that propagates laterally within the first semiconductor layer 1031, the brightness of the first light beam leaking from the edges of the light-emitting chip structure 100 can be kept low while the color conversion unit 104 is active, emitting only red or green light.

[0245] FIG22 is a schematic diagram of another light emitting chip structure provided by an embodiment of the present application. Referring to FIG22 , the color conversion unit 104 includes: a light shielding layer 1041 , a defining dam layer 1042 , an optical function layer 1043 and a filter layer 1044 .

[0246] The light-shielding layer 1041 in the color conversion unit 104 can be located on one side of the second substrate 600. The light-shielding layer 1041 can have multiple light-through holes K1. Here, the multiple light-through holes K1 can correspond one-to-one to the multiple sub-light-emitting functional layers 103a in the light-emitting unit 103. The orthographic projection of each light-through hole K1 on the second substrate 600 can overlap with the orthographic projection of the corresponding sub-light-emitting functional layer 103a on the second substrate 600. For example, the orthographic projection of each sub-light-emitting functional layer 103a in the light-emitting unit 103 on the second substrate 600 can be located within the orthographic projection of the corresponding light-through hole K1 on the second substrate 600.

[0247] The defining dam layer 1042 in the color conversion unit 104 can be located on the side of the light shielding layer 1041 facing away from the second substrate 600. The defining dam layer 1042 can have multiple opening areas K2 corresponding one-to-one to the multiple light-through holes K1, and these opening areas K2 can also correspond one-to-one to the multiple sub-light-emitting functional layers 103a in the light-emitting unit 103. Here, the orthographic projection of each opening area K2 in the defining dam layer 1042 on the second substrate 600 can overlap with the orthographic projection of the corresponding light-through hole K1 on the second substrate 600, and can overlap with the orthographic projection of the corresponding sub-light-emitting functional layer 103a on the second substrate 600. For example, the light-emitting side of each sub-light-emitting functional layer 103a in the light-emitting unit 103 can face the corresponding opening area K2, and the orthographic projection of each sub-light-emitting functional layer 103a on the second substrate 600 can be located within the orthographic projection of the corresponding opening area K2 on the second substrate 600. The orthographic projection of each opening area K2 in the dam layer 1042 on the second substrate 600 may be located within the orthographic projection of the corresponding light-through hole K1 on the second substrate 600 .

[0248] In the embodiment of the present application, as shown in Figures 23 to 25, Figure 23 is a top view of another light-emitting chip structure provided in the embodiment of the present application, Figure 24 is a schematic diagram of the film layer structure of the light-emitting chip structure 100 shown in Figure 23 at A-A', and Figure 25 is a schematic diagram of the film layer structure of the light-emitting chip structure 100 shown in Figure 23 at B-B'. The multiple sub-light-emitting functional layers 103a in the light-emitting unit 103 may include: a first sub-light-emitting functional layer 103a1, a second sub-light-emitting functional layer 103a2, and a third sub-light-emitting functional layer 103a3. Among them, the first sub-light-emitting functional layer 103a1, the second sub-light-emitting functional layer 103a2, and the third sub-light-emitting functional layer 103a3 are all used to emit a first light in the working state.

[0249] Accordingly, the plurality of opening regions K2 defined in the dam layer 1042 may include a first opening region K21, a second opening region K22, and a third opening region K23. The first opening region K21 may be disposed opposite the first sub-light-emitting functional layer 103a1, the second opening region K22 may be disposed opposite the second sub-light-emitting functional layer 103a2, and the third opening region K23 may be disposed opposite the third sub-light-emitting functional layer 103a3.

[0250] The first opening area K21 and the second opening area K22 are arranged in a row in the first direction X, and the second opening area K22 and the third opening area K23 are arranged in a row in the second direction Y. The first direction X intersects the second direction Y. For example, the first direction X can be perpendicular to the second direction Y. In the embodiment of the present application, the area enclosed by the outer contour of the dam layer 1042 is rectangular; the first opening area K21, the second opening area K22, and the third opening area K23 are all rectangular in shape.

[0251] The optical functional layer 1043 in the color conversion unit 104 can be located within the opening region K2 defining the dam layer 1042. At least a portion of the optical functional layer 1043 is configured to convert the color of light entering the optical functional layer 1043. Here, light emitted from the light-emitting unit 103 can be directed toward the optical functional layer 1043, where it is converted in color before being emitted through the apertures in the light-shielding layer 1041.

[0252] Optionally, the optical functional layer 1043 in the color conversion unit 104 may include a first color conversion portion 1043a, a second color conversion portion 1043b, and a third color conversion portion 1043c. The first color conversion portion 1043a may be located within the first opening area K21, the second color conversion portion 1043b may be located within the second opening area K22, and the third color conversion portion 1043c may be located within the third opening area K23.

[0253] In this case, the first light emitted by the first sub-light-emitting functional layer 103a1 can be directed toward the first color conversion region 1043a, where it is converted into light of another color by the first color conversion region 1043a. The first light emitted by the second sub-light-emitting functional layer 103a2 can be directed toward the second color conversion region 1043b, where it is converted into light of another color by the second color conversion region 1043b. The first light emitted by the third sub-light-emitting functional layer 103a3 can be directed toward the third color conversion region 1043c, where it can be transmitted through or converted by the third color conversion region 1043c.

[0254] For example, the light emitting chip structure 100 may have a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B. The first light emitted by the first sub-light emitting functional layer 103a1, the second sub-light emitting functional layer 103a2, and the third sub-light emitting functional layer 103a3 in the light emitting unit 103 includes at least one of blue light and ultraviolet light.

[0255] The first color conversion unit 1043a is used to convert the first light into red light. For example, the first color conversion unit 1043a includes red quantum dots that convert the first light into red light. Preferably, the first color conversion unit 1043a also includes scattering particles for scattering light. After the first light emitted by the first sub-light-emitting functional layer 103a1 strikes the first color conversion unit 1043a distributed within the first opening area K21, the red quantum dots convert the first light into red light. The scattering particles scatter the first light and red light, ensuring that more of the first light is converted into red light by the red quantum dots. This also ensures that the output angle of the converted red light is wide, thereby ensuring a wide viewing angle for the display substrate integrated with the light-emitting chip structure 100. To this end, the red sub-pixel R in the light-emitting chip structure 100 may include the first sub-light-emitting functional layer 103a1 and the first color conversion unit 1043a.

[0256] The second color conversion portion 1043b is used to convert the first light into green light. For example, the second color conversion portion 1043b includes green quantum dots that convert the first light into green light. Preferably, the second color conversion portion 1043b also includes scattering particles for scattering light. Here, after the first light emitted from the second sub-light-emitting functional layer 103a2 is emitted into the second color conversion portion 1043b distributed within the second opening area K22, it is converted into green light by the green quantum dots. The scattering particles scatter the first and green light, ensuring that more of the first light is converted into green light by the green quantum dots. This also ensures that the emitted green light has a wide emission angle, thereby ensuring a wide viewing angle for the display substrate integrated with the light-emitting chip structure 100. To this end, the green sub-pixel G in the light-emitting chip structure 100 may include the second sub-light-emitting functional layer 103a2 and the second color conversion portion 1043b.

[0257] The third color conversion portion 1043c is used to convert the first light into blue light or maintain blue light emission. For example, when the first light consists solely of blue light, the third color conversion portion 1043c can be a transparent portion or can include blue quantum dots. The transparent portion directly transmits the first light, while the blue quantum dots convert the first light into blue light of a different wavelength. Preferably, the third color conversion portion 1043c also includes scattering particles for scattering light. Here, after the first light emitted from the third sub-light-emitting functional layer 103a3 reaches the third color conversion portion 1043c distributed within the third opening area K23, the scattering particles scatter the first light, ensuring a wide emission angle for the blue light, thereby ensuring a wide viewing angle for the display substrate incorporating the light-emitting chip structure 100. For another example, when the first light includes ultraviolet light, the third color conversion portion 1043c includes blue quantum dots that convert the first light into blue light, or the third color conversion portion 1043c includes both scattering particles for scattering light and blue quantum dots for converting ultraviolet light into blue light. Here, after the first light emitted by the second sub-light-emitting functional layer 103a2 strikes the third color conversion portion 1043c distributed in the third opening area K23, the blue quantum dots convert the ultraviolet light in the first light into blue light. The scattering particles scatter the first light and the blue light, ensuring that more ultraviolet light is converted into blue light by the blue quantum dots. This also ensures that the output angle of the converted blue light is larger, thereby ensuring a wider viewing angle for the display substrate integrated with the light-emitting chip structure 100. To this end, the blue sub-pixel B in the light-emitting chip structure 100 may include the third sub-light-emitting functional layer 103a3 and the third color conversion portion 1043c.

[0258] Optionally, the material defining the dam layer 1042 in the color conversion unit 104 may include a light-absorbing organic material or a light-reflecting organic material. Here, the light-absorbing organic material is typically black and absorbs light emitted from the sides of the optical functional layer 1043; the light-reflecting organic material is typically gray and reflects light emitted from the sides of the optical functional layer 1043.

[0259] To this end, when the material of the definition dam layer 1042 includes a reflective organic material, light emitted from the side of the optical functional layer 1043 can be reflected back into the optical functional layer 1043 by the definition dam layer 1042, so that the quantum dots in the optical functional layer 1043 can convert the blue light or ultraviolet light in the reflected light back into light of the corresponding color, thereby further improving the excitation efficiency of the quantum dots. In addition, the light reflected back by the definition dam layer 1042 can be emitted from the side of the optical functional layer 1043 facing the second substrate 600, so that the light can be emitted after passing through the corresponding light hole K1. In this way, the light extraction efficiency of the light-emitting chip structure 100 can be effectively improved.

[0260] For example, when the material of the definition dam layer 1042 includes a light-reflective organic material, the reflectivity of the definition dam layer 1042 can range from 40% to 80%. For example, the reflectivity of the definition dam layer 1042 can be 63%±5%. It should be noted that when the reflectivity of the definition dam layer 1042 is above 30%, it can be considered that the definition dam layer 1042 has a certain degree of light reflectivity. When the reflectivity of the definition dam layer 1042 is between 40% and 80%, it can ensure that the definition dam layer 1042 can reflect more light back to the optical functional layer 1043.

[0261] The filter layer 1044 may include: a plurality of filter units corresponding one-to-one to the plurality of light through holes K1 , and the orthographic projection of each filter unit on the second substrate 600 may overlap with the orthographic projection of the corresponding light through hole K1 on the second substrate 600 .

[0262] For example, the multiple filter units in the filter layer 1044 may include a first filter unit 1044a, a second filter unit 1044b, and a third filter unit 1044c. Here, the first filter unit 1044a may be provided corresponding to the first color conversion unit 1043a, the second filter unit 1044b may be provided corresponding to the second color conversion unit 1043b, and the third filter unit 1044c may be provided corresponding to the third color conversion unit 1043c. To this end, the red sub-pixel R in the light-emitting chip structure 100 may further include the first filter unit 1044a; the green sub-pixel G in the light-emitting chip structure 100 may further include the second filter unit 1044b; and the blue sub-pixel B in the light-emitting chip structure 100 may further include the third filter unit 1044c.

[0263] For example, the first light emitted by the first sub-light-emitting functional layer 103a1, the second sub-light-emitting functional layer 103a2, and the third sub-light-emitting functional layer 103a3 in the light-emitting unit 103 is all blue light. The first filter unit 1044a can be a red color block that transmits red light and absorbs light of other colors. In this way, the light emitted from the first color conversion unit 1043a can pass through the first filter unit 1044a before being emitted. The first filter unit 1044a can filter out light of other colors except red light, thereby ensuring that the red sub-pixel R in the light-emitting chip structure 100 can filter out the blue light component. It should be noted that, in other possible implementations, the first filter unit 1044a may also be a film layer for transmitting red light and reflecting blue light. In this way, after the light emitted from the first color conversion portion 1043a is emitted into the first filter unit 1044a, the red light in this light can pass through the first filter unit 1044a before being emitted again, while the blue light in this light can be reflected back to the first color conversion portion 1043a by the first filter unit 1044a, so that the red quantum dots in the first color conversion portion 1043a can excite the blue light into red light. In this way, the excitation efficiency of the red quantum dots can be further improved.

[0264] For example, the first light emitted by the first sub-light-emitting functional layer 103a1, the second sub-light-emitting functional layer 103a2, and the third sub-light-emitting functional layer 103a3 in the light-emitting unit 103 is all blue light. The second filter unit 1044b can be a green color block that transmits green light and absorbs light of other colors. In this way, the light emitted from the second color conversion unit 1043b can pass through the second filter unit 1044b before being emitted. The second filter unit 1044b can filter out light of other colors except green light, thereby ensuring that the green sub-pixel G in the light-emitting chip structure 100 can filter out blue light components. It should be noted that, in other possible implementations, the second filter unit 1044b may also be a film layer for transmitting green light and reflecting blue light. In this way, after the light emitted from the second color conversion portion 1043b is emitted to the second filter unit 1044b, the green light in this light can pass through the second filter unit 1044b before being emitted, while the blue light in this light can be reflected by the second filter unit 1044b back to the second color conversion portion 1043b, so that the green quantum dots in the second color conversion portion 1043b can excite the blue light into green light. In this way, the excitation efficiency of the green quantum dots can be further improved.

[0265] It should be noted that the film structures of the first filter unit 1044a and the second filter unit 1044b can be the same and can be prepared through the same process; for example, the first filter unit 1044a and the second filter unit 1044b are both films that transmit red light and green light and reflect blue light.

[0266] For example, the first light emitted by the first sub-light-emitting functional layer 103a1, the second sub-light-emitting functional layer 103a2, and the third sub-light-emitting functional layer 103a3 in the light-emitting unit 103 is all blue light. The third filter unit 1044c can be a blue color block that transmits blue light and absorbs light of other colors. In this way, the light emitted from the third color conversion unit 1043c can pass through the third filter unit 1044c before being emitted. The third filter unit 1044c can filter out light of other colors except blue light, thereby ensuring that the blue sub-pixel B in the light-emitting chip structure 100 can emit relatively pure blue light.

[0267] For example, the first light emitted by the first sub-light-emitting functional layer 103a1, the second sub-light-emitting functional layer 103a2 and the third sub-light-emitting functional layer 103a3 in the light-emitting unit 103 are all blue light, and the third filter unit 1044c can be a transparent block that can transmit blue light.

[0268] It should be noted that, because the orthographic projections of the respective filter units in the filter layer 1044 on the second substrate 600 overlap with the orthographic projections of the corresponding light holes K1 in the light shielding layer 1041 on the second substrate 600, portions of the light shielding layer 1041 are distributed between two adjacent filter units in the filter layer 1044 in a direction parallel to the extended surface of the second substrate 600. In this way, light emitted from the side surfaces of a filter unit in the filter layer 1044 can be absorbed by the light shielding layer 1041, thereby ensuring that the intensity of light emitted from each sub-pixel toward adjacent sub-pixels is low, effectively reducing the probability of color crosstalk in the light-emitting chip structure 100.

[0269] 24 and 25 , the color conversion unit 104 includes a first encapsulation layer 1045, which can be located on the side of the definition dam layer 1042 facing away from the second substrate 600. The first encapsulation layer 1045 can encapsulate the definition dam layer 1042, the optical functional layer 1043, and the filter layer 1044 to prevent moisture and oxygen in the external environment from permeating the definition dam layer 1042 and corroding the optical functional layer 1043 or the filter layer 1044. This ensures that the optical functional layer 1043 can stably convert the color of light, thereby increasing the reliability of the optical functional layer 1043.

[0270] For example, the first encapsulation layer 1045 in the color conversion unit 104 may include a first encapsulation portion 10451 and a second encapsulation portion 10452. The first encapsulation portion 10451 is located on a side of the definition dam layer 1042 away from the second substrate 600, and the second encapsulation portion 10452 is located on the outer side of the definition dam layer 1042 and the light shielding layer 1041. In this manner, the first encapsulation layer 1045 can encapsulate the definition dam layer 1042 and the light shielding layer 1041, preventing moisture and oxygen in the external environment from corroding the optical functional layer 1043 through the light shielding layer 1041 and the definition dam layer 1042.

[0271] Alternatively, as shown in Figures 24 and 25, the color conversion unit 104 in the light-emitting chip structure 100 may further include a second encapsulation layer 1046 located between the light-shielding layer 1041 and the defining dam layer 1042. The optically functional layer 1043 and the defining dam layer 1042 in the color conversion unit 104 may both be located on the side of the second encapsulation layer 1046 facing away from the second substrate 600. The second encapsulation layer 1046 needs to cover at least the outer side of the light-shielding layer 1041 and the side of the light-shielding layer 1041 facing away from the second substrate 600. In this case, the second encapsulation layer 1046 can encapsulate the light-shielding layer 1041, preventing moisture and oxygen in the external environment from corroding the optically functional layer 1043 through the light-shielding layer 1041 and the defining dam layer 1042. Moreover, in this case, the first encapsulation layer 1045 only needs to cover the outer side surface of the dam layer 1042, that is, the second encapsulation part 10452 in the first encapsulation layer 1045 does not need to extend to the outer side surface of the light-shielding layer 1041, thereby reducing the step difference of the first encapsulation layer 1045 and reducing the risk of breakage of the first encapsulation layer 1045.

[0272] The first encapsulation layer 1045 can be a film structure that is continuously distributed at all locations. Of course, the second encapsulation layer 1046 can also be a film structure that is continuously distributed at all locations. Furthermore, the orthographic projections of the definition dam layer 1042 and the optical functional layer 1043 on the second substrate 600 are both located within the orthographic projection of the first encapsulation layer 1045 on the second substrate 600, and are also both located within the orthographic projection of the second encapsulation layer 1046 on the second substrate 600. Furthermore, the second encapsulation layer 1046 is disposed in contact with the first encapsulation layer 1045, so that the first encapsulation layer 1045 and the second encapsulation layer 1046 cooperate to completely encapsulate the definition dam layer 1042 and the optical functional layer 1043. Here, the area of ​​contact between the second encapsulation layer 1046 and the first encapsulation layer 1045 surrounds the definition dam layer 1042. This ensures a good encapsulation effect for the optical functional layer 1043 through the cooperation of the first encapsulation layer 1045 and the second encapsulation layer 1046, further improving the reliability of the optical functional layer 1043.

[0273] For example, as shown in FIG26 , the first encapsulation layer 1045 may further include a third encapsulation portion 10453. The third encapsulation portion 10453 may be connected to a side of the second encapsulation portion 10452 facing away from the first encapsulation portion 10451. The third encapsulation portion 10453 may be located on a side of the second encapsulation layer 1046 facing away from the second substrate 600, and may directly contact a side of the second encapsulation layer 1046 facing away from the second substrate 600. In this way, it is ensured that a portion of the first encapsulation layer 1045 is in contact with the second encapsulation layer 1046.

[0274] In the embodiment of the present application, the side of the third packaging part 10453 facing away from the second packaging part 10452 is the outer side surface of the first packaging layer 1045. The outer side surface of the first packaging layer 1045 can be flush with the outer side surface of the second packaging layer 1046, so that the contact area between the first packaging layer 1045 and the second packaging layer 1046 is wider, thereby ensuring that the first packaging layer 1045 and the second packaging layer 1046 have a better packaging effect on the limited dam layer 1042.

[0275] In an embodiment of the present application, the light-emitting unit 103 and the color conversion unit 104 in the light-emitting chip structure 100 can be bonded via a connecting layer 105. That is, a connecting layer 105 for bonding the two together is distributed between the light-emitting unit 103 and the color conversion unit 104. In order to more clearly see the structure of the light-emitting unit 103 in the light-emitting chip structure 100, please refer to Figures 27 and 28. Figure 27 is a top view of a first electrode, a second electrode, and a light-emitting unit located on the connecting layer provided in an embodiment of the present application, and Figure 28 is a schematic diagram of the film layer structure at C-C' in Figure 27. The first semiconductor layer 1031 included in the light-emitting unit 103 can be connected to the first electrode 101.

[0276] Each sub-light-emitting functional layer 103a in the light-emitting unit 103 may include: a second semiconductor layer 1032 and a light-emitting layer 1033 stacked in a direction perpendicular to and toward the second substrate 600. The second electrode 102, the second semiconductor layer 1032, and the light-emitting layer 1033 are stacked in a direction perpendicular to and toward the second substrate 600. That is, the light-emitting layer 1033 in the sub-light-emitting functional layer 103a is closer to the first semiconductor layer 1031 than the second electrode 102.

[0277] The light-emitting layer 1033 in each sub-light-emitting functional layer 103a can be connected to the first semiconductor layer 1031. Here, since the first semiconductor layer 1031 in the light-emitting unit 103 is located on the light-emitting side of each sub-light-emitting functional layer 103a, and the first semiconductor layer 1031 is closer to the second substrate 600 than each sub-light-emitting functional layer 103a, the first semiconductor layer 1031 can contact the side of the light-emitting layer 1033 in each sub-light-emitting functional layer 103a that is away from the second semiconductor layer 1032.

[0278] In the embodiment of the present application, referring to Figure 29, which is a top view of another first semiconductor layer provided in the embodiment of the present application, the auxiliary portion 10312 in the first semiconductor layer 1031 may include: a first auxiliary portion 10312a, a second auxiliary portion 10312b, and a third auxiliary portion 10312c.

[0279] The orthographic projection of the first auxiliary portion 10312a on the second substrate 600 may overlap with the orthographic projection of the first electrode 101 on the second substrate 600. For example, the outer boundary of the orthographic projection of the first auxiliary portion 10312a on the second substrate 600 coincides with the outer boundary of the orthographic projection of the first electrode 101 on the second substrate 600.

[0280] A portion of the second auxiliary portion 10312 b may be located between adjacent connecting portions 10311 , and another portion may be located between the first auxiliary portion 10312 a and the connecting portion 10311 .

[0281] The third auxiliary portion 10312 c may be disposed around the first auxiliary portion 10312 a , the second auxiliary portion 10312 b , and the plurality of connection portions 10311 .

[0282] To this end, the first auxiliary portion 10312 a , the second auxiliary portion 10312 b , the third auxiliary portion 10312 c and the plurality of connecting portions 10311 in the first semiconductor layer 1031 may form a planar structure provided as a whole layer.

[0283] Optionally, in the light-emitting unit 103, the material of the second semiconductor layer 1032 in each sub-light-emitting functional layer 103a may include p-type doped gallium nitride, and the light-emitting layer 1033 in each sub-light-emitting functional layer 103a may be a multi-quantum well layer. As shown in FIG28 , the first semiconductor layer 1031 may include a first sublayer 1031a and a second sublayer 1031b stacked perpendicularly and facing the second substrate 600. In other words, the second sublayer 1031b is closer to the connection layer 105 than the first sublayer 1031a. It is understood that the first semiconductor layer 1031 can be divided into an auxiliary portion 10312 and a plurality of connection portions 10311 in a direction parallel to the extension surface of the second substrate 600, and can be divided into a first sublayer 1031a and a second sublayer 1031b in a direction perpendicular to the extension surface of the second substrate 600.

[0284] The first sublayer 1031a in the first semiconductor layer 1031 can be located between the second sublayer 1031b and the light-emitting layer 1033 in each sub-light-emitting functional layer 103a. That is, the first sublayer 1031a is closer to the light-emitting layer 1033 in each sub-light-emitting functional layer 103a than the second sublayer 1031b. Here, the material of the first sublayer 1031a in the first semiconductor layer 1031 can be N-type doped gallium nitride, and the second sublayer 1031b in the first semiconductor layer 1031 can be a gallium nitride buffer layer.

[0285] In this case, in the light-emitting unit 103, after the first electrode 101 is loaded with a cathode signal, if the second electrode 102 in a sub-light-emitting functional layer 103a is loaded with an anode signal, the light-emitting layer 1033 in this sub-light-emitting functional layer 103a can emit the first light.

[0286] In the embodiment of the present application, each sub-light-emitting functional layer 103a in the light-emitting unit 103 may further include a current spreading layer 1034 located between the second electrode 102 and the second semiconductor layer 1032. Here, one side of the current spreading layer 1034 in each sub-light-emitting functional layer 103a may be in contact with the second semiconductor layer 1032, and the other side may be electrically connected to the second electrode 102. Optionally, the current spreading layer 1034 may be made of ITO (indium tin oxide). Providing the current spreading layer 1034 in the sub-light-emitting functional layer 103a facilitates hole transport and improves the electrical performance of the light-emitting chip structure 100.

[0287] In the embodiment of the present application, please refer to Figures 30 and 31. Figure 30 is a top view of another first electrode, a second electrode and a light-emitting unit provided in the embodiment of the present application, and Figure 31 is a schematic diagram of the film layer structure at D-D' in Figure 30. The light-emitting unit 103 may also include: a common electrode layer 1035 arranged in contact with the first semiconductor layer 1031, and the side of the common electrode layer 1035 facing away from the second substrate 600 can be electrically connected to the first electrode 101. Here, the first electrode 101 can be arranged in the same layer and with the same material as the second electrode 102 in each sub-light-emitting functional layer 103a, that is, the first electrode 101 and each second electrode 102 are formed using the same patterning process.

[0288] In the embodiment of the present application, the light-emitting unit 103 may further include an insulating protective layer 1036 located on a side of the common electrode layer 1035 and each sub-light-emitting functional layer 103a facing away from the first semiconductor layer 1031. The insulating protective layer 1036 may have a first connection hole V1 corresponding to the first electrode 101 and a plurality of second connection holes V2 corresponding one-to-one to the plurality of second electrodes 102.

[0289] The first connection hole V1 may correspond to the common electrode layer 1035, and the first electrode 101 may be electrically connected to the common electrode layer 1035 via the first connection hole V1. The plurality of second connection holes V2 may also correspond one-to-one to the plurality of sub-light-emitting functional layers 103a, and each second electrode 102 may be electrically connected to the current spreading layer 1034 in the corresponding sub-light-emitting functional layer 103a via the corresponding second connection hole V2. It should be noted that, for ease of viewing, the insulating protective layer 1036 is shown in the light-emitting unit 103 shown in FIG. 29 , but is not shown in the light-emitting unit 103 shown in FIG. 31 .

[0290] For example, the common electrode layer 1035 can function as a current spreader.

[0291] For example, the common electrode layer 1035 and the first electrode 101 are both made of metal.

[0292] Optionally, the thickness of the common electrode layer 1035 can be much greater than the thickness of the current spreading layer 1034. For example, the side of the common electrode layer 1035 facing away from the first semiconductor layer 1031 can be flush with the side of the current spreading layer 1034 facing away from the first semiconductor layer 1031. That is, the thickness of the common electrode layer 1035 can be equal to the sum of the thicknesses of the current spreading layer 1034, the second semiconductor layer 1032, and the light-emitting layer 1033 in the sub-light-emitting functional layer 103a. In this way, the side of the second electrode 102 and the first electrode 101 facing away from the connection layer 105 are also flush. Since the second electrode 102 and the first electrode 101 in the light-emitting chip structure 100 need to be welded to the driving unit 200 when the light-emitting chip structure 100 is subsequently connected to the driving backplane. Therefore, when the second electrode 102 and the first electrode 101 of the light-emitting chip structure 100 are flush with each other on the side facing away from the connection layer 105 , it can be ensured that the light-emitting chip structure 100 can be stably fixed on the driving unit 200 .

[0293] In the embodiment of the present application, the common electrode layer 1035 may include: a common electrode body 10351, a first support portion 10352 fixedly connected to the common electrode body 10351, and two second support portions 10353 fixedly connected to the first support portion 10352. The common electrode body 10351 may be electrically connected to the first electrode 101, the first support portions 10352 may be distributed around the common electrode body 10351, and each second support portion 10353 may be distributed on a side of the first support portion 10352 facing away from the common electrode body 10351. Of the two second support portions 10353, one may be located between two adjacent sub-light-emitting functional layers 103a distributed in the row direction, and the other may be located between two adjacent sub-light-emitting functional layers 103a distributed in the column direction. In this way, the intensity of the entire light emitting unit 103 can be ensured to be high, and the volume of the common electrode layer 1035 can be ensured to be large, thereby reducing the resistance for transmitting the common cathode signal in the light emitting unit 103 .

[0294] In an embodiment of the present application, referring to FIG32 , the light-emitting chip structure 100 includes a first lens structure 106 located between the light-emitting unit 103 and the color conversion unit 104. For example, the first lens structure 106 may be located within the connection layer 105 between the light-emitting unit 103 and the color conversion unit 104, such that at least a portion of the connection layer 105 is located on a side of the first lens structure 106 away from the light-emitting unit 103.

[0295] The orthographic projection of the first lens structure 106 on the second substrate 600 overlaps with the orthographic projection of at least one sub-light-emitting functional layer 103a on the second substrate 600. Light emitted by the sub-light-emitting functional layer 103a can pass through the first lens structure 106 and then be converted by the color conversion unit 104.

[0296] Optionally, the first lens structure 106 is disposed in contact with the light-emitting unit 103. The primary function of the first lens structure 106 is to converge the first light emitted by the sub-light-emitting functional layer 103a. For example, assuming that the refractive index of the first lens structure 106 is equal to that of the second sub-layer 1031b in the first semiconductor layer 1031 (which may be 2.45), and is less than the refractive index of the connecting layer 105, this can disrupt total internal reflection of light within the first semiconductor layer 1031, thereby preventing the light from generating an optical waveguide.

[0297] 32 , the first lens structure 106 includes a first surface 106 a extending along the extension surface of the first semiconductor layer 1031, and a second surface 106 b convex toward the color conversion unit 104. For example, the first surface 106 a of the first lens structure 106 may contact the surface of the first semiconductor layer 1031 of the light-emitting unit 103, and the second surface 106 b may be a curved surface.

[0298] Optionally, there may be multiple first lens structures 106. The orthographic projection of each of the multiple sub-light-emitting functional layers 103a on the second substrate 600 overlaps with the orthographic projection of at least one first lens structure 106 on the second substrate 600. Thus, for each sub-light-emitting functional layer 103a, the light emitted by the sub-light-emitting functional layer 103a can be converged by the corresponding first lens structure 106 and then converted to color by the color conversion unit 104.

[0299] Referring to Figure 32 , a first gap G, filled with a connecting layer 105, exists between each first lens structure 106 and the color conversion unit 104. In other words, the first lens structure 106 and the color conversion unit 104 are not in contact, but are connected by the connecting layer 105. Alternatively, referring to Figure 33 , at least one first lens structure 106 is in contact with the color conversion unit 104. This allows the at least one first lens structure 106 to provide support, preventing significant variations in the thickness of the connecting layer 105 at different locations when the color conversion unit 104 and the light-emitting unit 103 are attached, thereby affecting the light output effect.

[0300] Referring to Figure 34 , first lens structure 106 is disposed in contact with color conversion unit 104. The primary function of first lens structure 106 is to homogenize the first light emitted by sub-luminescent functional layer 103a. At least a portion of connecting layer 105, located between light-emitting unit 103 and color conversion unit 104, is located on the side of first lens structure 106 away from color conversion unit 104.

[0301] 34 , the first lens structure 106 includes a first surface 106a extending along the extension surface of the first substrate 300, and a second surface 106b protruding toward the light-emitting unit 103. For example, the first surface 106a of the first lens structure 106 may contact the surface of the first encapsulation layer 1045 of the color conversion unit 104, and the second surface 106b may be a curved surface.

[0302] Optionally, there may be multiple first lens structures 106. The orthographic projection of each of the multiple sub-light-emitting functional layers 103a on the second substrate 600 overlaps with the orthographic projection of at least one first lens structure 106 on the second substrate 600. Thus, for each sub-light-emitting functional layer 103a, the light emitted by the sub-light-emitting functional layer 103a can be homogenized by the corresponding first lens structure 106 and then converted in color by the color conversion unit 104, thereby maximizing the vertical emission of the light.

[0303] For example, the material of the first lens structure 106 can be silicon oxynitride (SiON) with a refractive index of 1.8. The first lens structure 106 can emit light with an incident angle less than 39.5° in a direction perpendicular to the first surface of the first lens structure 106 as much as possible.

[0304] Referring to Figure 34 , a first gap G, filled with a connecting layer 105, exists between each first lens structure 106 and the light-emitting unit 103. In other words, the first lens structure 106 and the light-emitting unit 103 are not in contact, but are connected by the connecting layer 105. Alternatively, referring to Figure 35 , at least one first lens structure 106 is in contact with the light-emitting unit 103. This allows the at least one first lens structure 106 to provide support, preventing significant variations in the thickness of the connecting layer 105 at different locations when the color conversion unit 104 and the light-emitting unit 103 are bonded together, thereby affecting the light output effect.

[0305] Optionally, the size A of the first lens structure 106 can be larger than the size B of the light hole K1, and the orthographic projection of the first lens structure 106 on the second substrate 600 covers the orthographic projection of the light hole K1 on the second substrate 600. In this case, the first lens structure 106 can better cover the first semiconductor layer 1031 overlapping with the light hole K1, so that the first lens structure 106 can enable more light with a larger refraction angle emitted by the light-emitting unit 103 to enter the connecting layer 105 without being totally reflected within the first semiconductor layer 1031. This can improve the problem of light emitted by the sub-light-emitting functional layer 103a being totally reflected at the interface between the first semiconductor layer 1031 and the first lens structure 106 within the light hole K1, and improve the problem of light leakage in each pixel area, which is conducive to improving the brightness of each pixel area and improving the display image quality.

[0306] Alternatively, the size A of the first lens structure 106 can be equal to the size B of the light hole K1, and the orthographic projection of the first lens structure 106 on the second substrate 600 overlaps with the orthographic projection of the light hole K1 on the second substrate 600. In this case, the first lens structure 106 can cover the first semiconductor layer 1031 that overlaps with the light hole K1, so that the first semiconductor layer 1031 can be used to allow more light with a larger refraction angle emitted by the sub-light-emitting functional layer 103a to enter the connecting layer 105 without undergoing total internal reflection, thereby improving the problem of total internal reflection of light emitted by the sub-light-emitting functional layer 103a at the interface between the first semiconductor layer 1031 and the first lens structure 106 within the light hole K1. At the same time, it can also prevent the light refracted by the first lens structure 106 from entering the opening area K2 of other sub-pixels adjacent to the sub-pixel due to the excessive size of the first lens structure 106 corresponding to the light hole K1, thereby avoiding problems such as color shift.

[0307] Alternatively, the size A of the first lens structure 106 is smaller than the size B of the light-through hole K1, and the orthographic projection of the first lens structure 106 on the second substrate 600 is located within the orthographic projection of the light-through hole K1 on the second substrate 600, and covers the orthographic projection of the sub-light-emitting functional layer 103a on the second substrate 600. That is, the first lens structure 106 is retracted a certain distance relative to the light-through hole K1. In this case, the first lens structure 106 can cover the first semiconductor layer 1031 that overlaps with the light-through hole K1, so that the first semiconductor layer 1031 can be used to allow more light with a larger refraction angle emitted by the sub-light-emitting functional layer 103a to enter the connecting layer 105 without undergoing total internal reflection, thereby improving the problem of total internal reflection of light emitted by the sub-light-emitting functional layer 103a at the interface between the first semiconductor layer 1031 and the first lens structure 106 in the light-through hole K1. At the same time, it can also prevent the first lens structure 106 corresponding to the light hole K1 from being too large, causing the light refracted by the first lens structure 106 to enter the opening area K2 of other sub-pixels adjacent to the sub-pixel, thereby avoiding problems such as color deviation.

[0308] In the embodiment of the present application, because the second substrate 600 is a planar structure disposed in an entire layer, some light directed toward the interior of the second substrate 600 is very likely to generate a light waveguide phenomenon within the interior of the second substrate 600. For example, some light incident on the second substrate 600 may undergo multiple total reflections between two opposing planes within the second substrate 600, undergo lateral transmission, and ultimately be emitted from the edge of the second substrate 600. After the light waveguide phenomenon is generated within the second substrate 600, the light emitted from the edge of the second substrate 600 may cause light leakage in the light-emitting chip structure 100.

[0309] To this end, referring to FIG36 , the light-emitting assembly 000 includes a second lens structure 800 located on a side of the second substrate 600 away from the color conversion unit 104. The orthographic projection of the second lens structure 800 on the second substrate 600 overlaps with the orthographic projection of the sub-light-emitting functional layer 103a on the second substrate 600. The primary function of the second lens structure 800 is to converge light emitted from the color conversion unit 104, thereby disrupting the light waveguide formed within the second substrate 600, thereby facilitating the introduction of light into the second lens structure 800.

[0310] Optionally, the second lens structure 800 includes a third surface 800a extending along the extension surface of the second substrate 600, and a fourth surface 800b convex toward a side away from the second substrate 600. The third surface 800a is closer to the second substrate 600 than the fourth surface 800b. For example, the fourth surface 800b can be a curved surface.

[0311] Optionally, there may be multiple second lens structures 800. The orthographic projection of each of the multiple sub-light-emitting functional layers 103a on the second substrate 600 overlaps with the orthographic projection of one second lens structure 800 on the second substrate 600. Thus, for each sub-light-emitting functional layer 103a, the light emitted by the color conversion unit 104 of the sub-light-emitting functional layer 103a is converted in color and then converged by the corresponding second lens structure 800 before being emitted.

[0312] Referring to Figure 36 , the light-emitting assembly 000 includes a flat film layer 900 located on the side of the second lens structure 800 away from the second substrate 600. The flat film layer 900 can cover the second lens structure 800, and the refractive index of the flat film layer 900 can be lower than that of the second lens structure 800. Light emitted from the color conversion unit 104 passes through the second lens structure 800 and is refracted at the interface between the second lens structure 800 and the flat film layer 900, thereby converging the light. The flat film layer 900 also protects the second lens structure 800.

[0313] When the light-emitting component includes the second lens structure 800 and the flat film layer 900, the second lens structure 800 can be fabricated on one surface of the second substrate 600 using a thermal reflow method, a lamination method, or an imprinting method, followed by fabricating the flat film layer 900 having a lower refractive index. The second substrate 600 is then flipped over to fabricate the color conversion unit 104.

[0314] Optionally, referring to FIG37 , the second substrate 600 may include a first sub-substrate 601 and a second sub-substrate 602. The second lens structure 800 and the flat film layer 900 are located on a surface of the first sub-substrate 601, and the color conversion unit 104 is located on a surface of the second sub-substrate 602. During the manufacturing process, a thermal reflow method, a lamination method, or an imprinting method may be used to form the second lens structure 800 and the flat film layer 900 on one surface of the first sub-substrate 601, then form the color conversion unit 104 on one surface of the second sub-substrate 602, and finally, the other surface of the first sub-substrate 601 and the other surface of the second sub-substrate 602 are laminated together.

[0315] In an embodiment of the present application, to further address the issue of light leakage from the edge of the first semiconductor layer 1031, with reference to FIG38 , the light-emitting chip structure 100 further includes a first light-shielding structure 107. The first light-shielding structure 107 wraps around the edge of the first semiconductor layer 1031. Alternatively, with reference to FIG39 , the first light-shielding structure 107 includes a first light-shielding portion 1071 located on the surface of the first semiconductor layer 1031 on the side close to the second substrate 600. Alternatively, with reference to FIG40 , the first light-shielding structure 107 includes a first light-shielding portion 1071 located on the edge of the surface of the first semiconductor layer 1031 on the side close to the second substrate 600, and a second light-shielding portion 1072 located on the edge of the surface of the first semiconductor layer 1031 on the side away from the second substrate 600.

[0316] The first light-shielding structure 107 can be used to absorb light that strikes the first light-shielding structure 107. Therefore, even if light is totally reflected within the first semiconductor layer 1031 and emitted from the edge of the first semiconductor layer 1031, the first light-shielding structure 107 can absorb the light emitted from the edge, thereby preventing the light from leaking out of the edge and solving the problem of edge light leakage.

[0317] Optionally, the material of the first light-shielding structure 107 can be a low-reflectivity metal such as Mo (molybdenum), W (tungsten), or a blackened metal such as a MoW (molybdenum-tungsten) alloy. Alternatively, the material of the first light-shielding structure 107 can be a metal oxide such as MoTaO (molybdenum tantalum oxide). Alternatively, the material of the first light-shielding structure 107 can be a blue light-absorbing material, such as, but not limited to, a material that utilizes a film system design to achieve destructive interference of light.

[0318] Optionally, referring to FIG41 , the edge of the first semiconductor layer 1031 may be a pre-cut edge, that is, the side edge of the first semiconductor layer 1031 includes a first pre-cut edge S1, a second pre-cut edge S2, and an intermediate side edge S3 located between the first pre-cut edge S1 and the second pre-cut edge S2. A certain angle is formed between the extension surfaces of the first pre-cut edge S1 and the intermediate side edge S3, and between the second pre-cut edge S2 and the intermediate side edge S3.

[0319] For example, when the first light-shielding structure 107 wraps around the edge of the first semiconductor layer 1031, the first light-shielding structure 107 can wrap around the first pre-cut edge S1 and the second pre-cut edge S2. When the first light-shielding structure 107 includes a first light-shielding portion 1071 located at the edge of the surface of the first semiconductor layer 1031 on the side close to the second substrate 600, the first light-shielding portion 1071 can wrap around the first pre-cut edge S1. When the first light-shielding structure 107 includes a first light-shielding portion 1071 and a second light-shielding portion 1072, the first light-shielding portion 1071 can wrap around the first pre-cut edge S1, and the second light-shielding portion 1072 can wrap around the second pre-cut edge S2.

[0320] In the embodiment of the present application, the edge of the first semiconductor layer 1031 is an inclined surface facing the first substrate 300. For example, the edge of the first semiconductor layer 1031 away from the second substrate 600 is closer to the center of the light emitting component 000 than the edge of the first semiconductor layer 1031 close to the second substrate 600.

[0321] Optionally, referring to Figures 42 and 43, the light-emitting chip structure 100 further includes a second light-shielding structure 108, which is located on a surface of the driving unit 200 and / or the first substrate 300 facing the light-emitting chip structure 100. For example, in Figure 42, the second light-shielding structure 108 is located on a surface of the driving unit 200 facing the light-emitting chip structure 100. For example, in Figure 43, the second light-shielding structure 108 is located on a surface of the first substrate 300 facing the light-emitting chip structure 100.

[0322] The orthographic projection of the inclined surface on the second substrate 600 overlaps with the orthographic projection of the second light shielding structure 108 on the second substrate 600. For example, the orthographic projection of the second light shielding structure 108 on the second substrate 600 may cover the orthographic projection of the inclined surface on the second substrate 600.

[0323] Alternatively, referring to FIG. 44 , the second light-shielding structure 108 may be annular and include an outer contour edge 108 a. The orthographic projection of the inclined surface on the second substrate 600 is located within the orthographic projection of the outer contour edge 108 a on the second substrate 600. In other words, the second light-shielding structure 108 may include a portion extending beyond the outer contour edge 108 a of the first semiconductor layer 1031. This allows light emitted from the edge of the first semiconductor layer 1031 to be absorbed by the second light-shielding structure 108 as much as possible, thereby preventing light leakage from the edge.

[0324] Referring to Figure 45 , to further address the issue of light leakage from the edge of the second substrate 600, the light-emitting assembly 000 includes a third light-shielding structure 1000. The third light-shielding structure 1000 can be used to absorb light that impinges upon it. Therefore, even if light is totally reflected within the second substrate 600 and emitted from the edge of the second substrate 600, the third light-shielding structure 1000 can absorb the light emitted from the edge, thereby preventing light from leaking out of the edge and addressing the edge light leakage issue.

[0325] Optionally, the third light-shielding structure 1000 may wrap around the edge of the second substrate 600. Alternatively, the third light-shielding structure 1000 includes a third light-shielding portion located on the surface of the second substrate 600 away from the light-emitting unit 103. Alternatively, the third light-shielding structure 1000 includes a third light-shielding portion located on the edge of the surface of the second substrate 600 away from the light-emitting unit 103, and a fourth light-shielding portion located on the edge of the surface of the second substrate 600 near the light-emitting unit 103.

[0326] Optionally, assuming that the refractive index of the second substrate 600 is 1.5 and the refractive index of air is 1, the critical angle can be obtained according to the formula for the critical angle of total reflection to be arcsin 1 / 1.5≈41.8°. In other words, the angle of total reflection of light from the second substrate 600 to the air is 41.8°. In other words, when the angle of incidence of light is greater than 41.8°, it will be totally reflected within the second substrate 600 and emitted from the side of the second substrate 600. Therefore, by providing a third light-shielding structure at the edge of the second substrate 600, the third light-shielding structure 1000 can absorb light emitted from the side.

[0327] Optionally, the third light-shielding structure 1000 may be prepared by side sputtering, and its material may be a low-reflectivity metal, a metal oxide, or a light-absorbing material.

[0328] In the embodiment of the present application, the driving circuit 203 in the driving unit 200 may include a plurality of thin film transistors and at least one storage capacitor. Optionally, the driving circuit 203 may include seven thin film transistors and one storage capacitor, that is, the driving circuit 203 is a 7T1C driving circuit. Alternatively, the driving circuit 203 may include other numbers of thin film transistors and other numbers of storage capacitors. The embodiment of the present application does not limit the number of thin film transistors included in the driving circuit 203 and the number of storage capacitors included.

[0329] Each thin film transistor includes a gate, a source, and a drain. The driving circuit 203 includes multiple thin film transistors that are interconnected to achieve the function of driving the light emitting chip structure 100 to emit light.

[0330] Optionally, the plurality of thin film transistors include at least a data writing transistor, the source of which is connected to a data line of a display backplane in the display panel. The data line can transmit a data driving signal to the driving circuit 203 through the data writing transistor.

[0331] In an embodiment of the present application, one of the multiple pins 500 included in the light-emitting component 000 is connected to the source of the data writing transistor in the driving circuit 203, and the data writing transistor is connected to the third electrode 201 of the driving unit 200 through other thin film transistors, so that the data line included in the display backplane in the display panel transmits the data driving signal to the first electrode 101 of the light-emitting unit 103 through the pin 500, the driving circuit 203, and the third electrode 201 in sequence.

[0332] It should be noted that in order for the driving unit 200 to drive the light-emitting chip structure 100 to emit light, in addition to providing the data driving signal to the first electrode 101, a power signal (e.g., a VSS signal) must also be provided to the second electrode 102. Optionally, the display backplane can provide the same power signal to the multiple light-emitting components 000 included in the display substrate. Therefore, the power signal can be provided to the second electrodes 102 of the light-emitting chip structures 100 in the multiple light-emitting components 000 via pins located in the peripheral area of ​​the display substrate.

[0333] 46 , the driving circuit 203 includes a buffer layer (buffer+barrier) m1, an active layer (poly) m2, a gate insulator (GI) m3, a gate layer (gate) m4, an inter-level dielectric (ILD) m5, a source / drain layer (not shown), and a planarization layer (PLN) m6, which are stacked in sequence on one side of the first substrate 300. The third electrode 201 and the fourth electrode 202 included in the driving unit 200 are located on the side of the planarization layer m6 away from the first substrate 300.

[0334] The active layer m2 includes multiple active patterns corresponding to multiple thin film transistors, each of which includes a source region, a drain region, and a channel region. The source and drain of the thin film transistor are located in the source-drain layer, and the source of the thin film transistor is connected to the source region, and the drain is connected to the drain region.

[0335] The gate layer m4 includes a plurality of gate patterns corresponding to the plurality of thin film transistors. The channel region is an overlapping region of an orthographic projection of the gate pattern on the first substrate 300 and an orthographic projection of the active pattern on the first substrate 300.

[0336] Optionally, the driving unit 200 may be a low temperature polysilicon (LTPS) driving unit. That is, the thin film transistors included in the driving circuit 203 in the driving unit 200 may include LTPS thin film transistors.

[0337] In summary, an embodiment of the present application provides a light-emitting component, which includes a light-emitting chip structure, a driving unit, a first substrate located on a side of the driving unit away from the light-emitting chip structure, a plurality of connection structures located in a plurality of through holes of the first substrate, and a plurality of pins electrically connected to the plurality of connection structures. The surface of the connection structure away from the pins and the surface of the first substrate away from the pins are located in the same plane, which can ensure the surface flatness of the driving unit when it is prepared on the first substrate, thereby improving the performance of the driving unit. In addition, the first substrate has good support for the driving unit and the light-emitting chip structure. Even if the protective film needs to be torn off before the pins are formed, the driving unit or the light-emitting chip structure will not be pulled and curled, resulting in breakage, thereby ensuring the yield of the product.

[0338] FIG47 is a flow chart of a method for preparing a light-emitting component according to an embodiment of the present application. Referring to FIG47 , the method includes:

[0339] Step S101: Acquire a first target structure.

[0340] In the embodiment of the present application, the first target structure includes a second substrate 600 and a light-emitting chip structure 100 located on the second substrate 600. The light-emitting chip structure 100 includes a first electrode 101, a second electrode 102, and a light-emitting unit 103 electrically connected to the first electrode 101 and the second electrode 102. Optionally, the first target structure may further include a first lens structure 106, which may be configured to converge light emitted by the light-emitting unit 103.

[0341] Optionally, referring to Figure 48, the process of obtaining the light-emitting unit 103 and the first lens structure 106 in the first target structure includes: surface treatment of the substrate (sapphire substrate or silicon-based substrate), and sequentially forming a first semiconductor layer 1031, a light-emitting layer 1033, a second semiconductor layer 1032 and a current spreading layer 1034, and the process of forming the above-mentioned film layers can adopt deposition, photolithography and etching processes; the entire structure is placed on a temporary carrier and temporarily bonded through an adhesive layer and a debonding layer; the substrate is removed; the first lens structure 106 is formed on the side of the first semiconductor layer 1031 away from the light-emitting layer 1033; and the side of the first semiconductor layer 1031 is pre-cut.

[0342] Optionally, the light-emitting chip structure 100 further includes a color conversion unit 104. Referring to FIG. 49 , the process of obtaining the second substrate 600 and the color conversion unit 104 in the first target structure includes: forming a light-shielding layer 1041 on the surface of the second substrate 600; forming a filter layer 1044 within the light-through hole K1 of the light-shielding layer 1041; forming a defining dam layer 1042 on the side of the light-shielding layer 1041 away from the second substrate 600; forming an optical function layer 1043 within the opening region K2 of the defining dam layer 1042; and forming a first encapsulation layer 1045 on the side of the optical function layer 1043 away from the second substrate 600. In FIG. 49 , the filter layer 1044 is closer to the second substrate 600 than the optical function layer 1043.

[0343] Referring to FIG50 , the process of obtaining the second substrate 600 and the color conversion unit 104 in the first target structure includes: forming a light shielding layer 1041 on the surface of the second substrate 600; forming a definition dam layer 1042 on the side of the light shielding layer 1041 away from the second substrate 600; forming an optical function layer 1043 and a filter layer 1044 within the light holes of the light shielding layer 1041 and the openings of the definition dam layer 1042; and forming a first encapsulation layer 1045 on the side of the filter layer 1044 away from the second substrate 600. In FIG50 , the optical function layer 1043 is closer to the second substrate 600 than the filter layer 1044.

[0344] Optionally, the first target structure may further include an isolation portion 700 connected to the second substrate 600. That is, if the isolation portion 700 is an integral structure, the isolation portion 700 may be formed during the process of forming the light-emitting chip structure 100. Alternatively, if the isolation portion 700 includes a first sub-isolating portion 701 and a second sub-isolating portion 702, the first sub-isolating portion 701 may be formed during the process of forming the light-emitting chip structure 100.

[0345] Alternatively, the first target structure may not include the isolation portion 700 . For example, the isolation portion 700 may be formed in a subsequent process of forming the driving unit 200 .

[0346] Step S102: Acquire a second target structure.

[0347] In the embodiment of the present application, the second target structure includes a temporary substrate, a first substrate 300 located on the temporary substrate, and a driving unit 200 located on a side of the first substrate 300 away from the temporary substrate. The driving unit 200 includes a third electrode 201, a fourth electrode 202, and a driving circuit 203. The third electrode 201 and the fourth electrode 202 are respectively electrically connected to the driving circuit 203. The first substrate 300 has a plurality of through holes 300a, each of which has a connecting structure 400 therein, which is connected to the driving circuit 203.

[0348] Optionally, referring to FIG51 , a temporary substrate in the second substrate 600, a first substrate 300 and a connection structure 400 are obtained, including:

[0349] Step S1021: Obtain a first initial substrate.

[0350] Referring to FIG52 , the first initial substrate can be a relatively thin glass substrate. For example, the thickness of the first initial substrate can be less than or equal to 0.3 mm. The shape of the first initial substrate can be circular or square (e.g., a 510 x 515 mm square). This embodiment of the present application does not limit the shape of the first initial substrate.

[0351] Step S1022: using a laser device to form a plurality of through holes on the first initial substrate.

[0352] 52 , the first preliminary substrate may have a plurality of through holes 300 a thereon.

[0353] Step S1023 : forming a conductive material on the surface of the first initial substrate and in the plurality of through holes using an electroplating process.

[0354] 52 , a conductive material may be formed on the surface of the first initial substrate and in the plurality of through holes 300 a using an electroplating process. For example, if the conductive material is copper, this step may form copper on the entire surface and in the plurality of through holes 300 a.

[0355] Step S1024 : grinding the first initial substrate and the conductive material on the surface of the first initial substrate using a grinding device to obtain a first substrate.

[0356] Referring to Figure 52 , the conductive material formed on the surface of the first initial substrate is ground, leaving the conductive material within the plurality of through-holes 300a. The conductive material within the plurality of through-holes 300a forms a plurality of connection structures 400. Optionally, the thickness of the first substrate 300 is less than that of the first initial substrate, for example, the thickness of the first substrate 300 is 0.25 mm.

[0357] Step S1025 : bonding the first substrate and the temporary substrate together.

[0358] Because the first substrate 300 is relatively thin, a temporary substrate can be bonded to the first substrate 300 to provide effective support for the driver unit 200 during subsequent fabrication. This improves the overall support performance of the substrate. This first substrate not only prevents device warping when removing the protective film, but also facilitates subsequent processing.

[0359] Step S103: bonding the driving unit and the light-emitting chip structure together through a bonding process.

[0360] 53 , after the light emitting chip structure 100 and the driving unit 200 are bonded together through a bonding process, the third electrode 201 and the first electrode 101 may be electrically connected, and the fourth electrode 202 and the second electrode 102 may be electrically connected.

[0361] Step S104 : removing the temporary substrate from one side of the first substrate to expose the connection structure.

[0362] In the embodiment of the present application, referring to Figure 54, the temporary substrate can be removed from one side of the first substrate 300. The connection structure 400 can be used to transmit signals to the driving unit 200. By removing the temporary substrate, the connection structure 400 can be exposed.

[0363] Step S105 : forming a pin on a side of the connection structure away from the driving unit.

[0364] In the embodiment of the present application, referring to FIG55 , the pins 500 are connected to the connection structure 400, so that the driver backplane provides a driving signal to the driver unit 200 through the pins 500 and the connection structure 400. The surface of the connection structure 400 away from the pins 500 and the surface of the first substrate 300 away from the pins 500 are located in the same plane.

[0365] Optionally, after the pins 500 are formed, the second substrate 600 may be thinned (the thickness before thinning ranges from 0.5 mm to 1.0 mm, and the thickness after thinning ranges from 0.25 mm to 0.5 mm).

[0366] Optionally, when preparing the light-emitting chip structure, a larger-sized second substrate and first substrate (e.g., 4 inches) may be used to prepare multiple light-emitting chip structures. Furthermore, after forming the pins 500, the light-emitting chip structure may be cut into individual islands to obtain multiple independent light-emitting chip structures.

[0367] FIG56 is a flow chart of another method for preparing a light emitting component according to an embodiment of the present application. Referring to FIG56 , the method includes:

[0368] Step S201: Acquire a first target structure.

[0369] In the embodiment of the present application, the first target structure includes a second substrate 600 and a light-emitting chip structure 100 located on the second substrate 600. The light-emitting chip structure 100 includes a first electrode 101, a second electrode 102, and a light-emitting unit 103 electrically connected to the first electrode 101 and the second electrode 102. Optionally, the first target structure may further include a first lens structure 106, which may be configured to converge light emitted by the light-emitting unit 103.

[0370] Optionally, the process of obtaining the light-emitting unit 103 and the first lens structure 106 in the first target structure can refer to the above step S101, and the process of obtaining the second substrate 600 and the color conversion unit 104 in the first target structure can also refer to the above step S101. The embodiments of the present application will not be repeated here.

[0371] Step S202: Acquire a second target structure.

[0372] In the embodiment of the present application, the second target structure includes a temporary substrate, a temporary adhesive material located on the temporary substrate, a plurality of pins 500, a first substrate 300, and a driving unit 200 located on a side of the first substrate 300 away from the temporary substrate. The driving unit 200 includes a third electrode 201, a fourth electrode 202, and a driving circuit 203. The third electrode 201 and the fourth electrode 202 are electrically connected to the driving circuit 203. The first substrate 300 has a plurality of through holes 300a, each of which has a connecting structure 400 therein. The connecting structure 400 is connected to the driving circuit 203 and the pins 500.

[0373] Optionally, referring to FIG57 , a temporary substrate, a temporary adhesive, a plurality of pins 500 , a first substrate 300 and a connection structure 400 in the second substrate 600 are obtained, including:

[0374] Step S2021: Obtain a first initial substrate.

[0375] Referring to FIG52 , the first initial substrate can be a relatively thin glass substrate. For example, the thickness of the first initial substrate can be less than or equal to 0.3 mm. The shape of the first initial substrate can be circular or square (e.g., a 510 x 515 mm square). This embodiment of the present application does not limit the shape of the first initial substrate.

[0376] Step S2022: using a laser device to form a plurality of through holes on the first initial substrate.

[0377] 52 , the first preliminary substrate may have a plurality of through holes 300 a thereon.

[0378] Step S2023 : forming a conductive material on the surface of the first initial substrate and in the plurality of through holes using an electroplating process.

[0379] 52 , a conductive material may be formed on the surface of the first initial substrate and in the plurality of through holes 300 a using an electroplating process. For example, if the conductive material is copper, this step may form copper on the entire surface and in the plurality of through holes 300 a.

[0380] Step S2024: grinding the first initial substrate and the conductive material on the surface of the first initial substrate using a grinding device to obtain a first substrate.

[0381] Referring to Figure 52 , the conductive material formed on the surface of the first initial substrate is ground, leaving the conductive material within the plurality of through-holes 300a. The conductive material within the plurality of through-holes 300a forms a plurality of connection structures 400. Optionally, the thickness of the first substrate 300 is less than that of the first initial substrate, for example, the thickness of the first substrate 300 is 0.25 mm.

[0382] Step S2025: forming a plurality of pins on one side of the first substrate.

[0383] 58 , a plurality of pins 500 formed on one side of the first substrate 300 may be connected to the connection structure 400 .

[0384] Step S2026: Using a temporary adhesive, bond the temporary substrate to the side of the first substrate where the plurality of pins are formed.

[0385] Since the first substrate 300 is relatively thin, in order to provide effective support for the subsequently formed driving unit 200 during the subsequent preparation process, the temporary substrate and the first substrate 300 may be bonded to improve the supporting performance of the entire substrate.

[0386] At the same time, since multiple pins 500 have been formed on the surface of the first substrate 300, a temporary adhesive can be used for bonding to protect the multiple pins 500, as shown in Figure 59. The temporary adhesive can cover the multiple pins 500, and the thickness of the temporary adhesive is greater than or equal to the height of the pins 500.

[0387] Step S203: bonding the driving unit and the light-emitting chip structure together through a bonding process.

[0388] 60 , after the light emitting chip structure 100 and the driving unit 200 are bonded together through a bonding process, the third electrode 201 and the first electrode 101 may be electrically connected, and the fourth electrode 202 and the second electrode 102 may be electrically connected.

[0389] Step S204: removing the temporary substrate from one side of the first substrate to expose the pins.

[0390] In the embodiment of the present application, referring to FIG61 , when the temporary substrate is removed from one side of the first substrate 300, the temporary adhesive is also removed (or, by removing the temporary adhesive, the temporary substrate is removed from one side of the first substrate 300; the method for removing the temporary adhesive is, for example, vaporizing the temporary adhesive). The pins 500 are connected to the connection structure 400, so that the drive backplane provides a drive signal to the drive unit 200 through the pins 500 and the connection structure 400. The surface of the connection structure 400 away from the pins 500 and the surface of the first substrate 300 away from the pins 500 are located in the same plane.

[0391] In summary, an embodiment of the present application provides a method for preparing a light-emitting component, wherein the light-emitting component prepared by the method includes a light-emitting chip structure, a driving unit, a first substrate located on a side of the driving unit away from the light-emitting chip structure, a plurality of connection structures located in a plurality of through holes of the first substrate, and a plurality of pins electrically connected to the plurality of connection structures. The surface of the connection structure away from the pins and the surface of the first substrate away from the pins are located in the same plane, which can ensure the surface flatness of the driving unit when it is prepared on the first substrate and improve the performance of the driving unit. In addition, the first substrate has good supporting force for the driving unit and the light-emitting chip structure. Even if the protective film needs to be torn off before the pins are formed, the driving unit or the light-emitting chip structure will not be pulled and curled to cause breakage, thereby ensuring the yield of the product.

[0392] Figure 62 is a schematic diagram of the structure of a display substrate provided in an embodiment of the present application. Referring to Figure 62, the display substrate includes a driver backplane 111 and the light-emitting assembly 000 provided in the above embodiment. Driver backplane 111 includes a driver substrate 1111 and pads located on driver substrate 1111. The pads include a plurality of conductive pads 1112. Conductive pads 1112 are used to electrically connect to pins 500 in light-emitting assembly 000.

[0393] Referring to Figure 63, multiple light-emitting components 000 are located in the display area a of the display substrate, and the multiple light-emitting components 000 are arranged in an array. The driving backplane 111 is used to provide a driving signal to the driving unit 200 through the multiple pins 500 in the light-emitting components 000, so that the driving unit 200 drives the light-emitting unit 103 to emit light.

[0394] Furthermore, since the plurality of light emitting components 000 in the display substrate are independently provided, it is possible to repair and replace a single light emitting component.

[0395] Optionally, the display substrate may be a display screen in a mobile phone, a laptop computer, or a flat-panel computer, or an outdoor advertising screen.

[0396] Since the display substrate can have substantially the same technical effects as the light-emitting assembly described in the previous embodiment, the technical effects of the display substrate will not be repeatedly described here for the purpose of brevity.

[0397] In the embodiment of the present application, referring to FIG16 , the light-emitting chip structure 100 includes: a first electrode 101, a second electrode 102, a light-emitting unit 103, and a color conversion unit 104, located on a second substrate 600. The first electrode 101 and the second electrode 102 are located on a side of the light-emitting unit 103 away from the color conversion unit 104 and are both electrically connected to the light-emitting unit 103. The color conversion unit 104 is located on the light-emitting side of the light-emitting unit 103. In this case, light emitted from the light-emitting unit 103 can be directed toward the color conversion unit 104, then pass through the color conversion unit 104, and then be emitted.

[0398] The light-emitting unit 103 in the light-emitting chip structure 100 may include: multiple sub-light-emitting functional layers 103a, and a first semiconductor layer 1031 located on the light-emitting side of the multiple sub-light-emitting functional layers 103a. To more clearly illustrate the structure of the first semiconductor layer 1031, please refer to Figure 17. The first semiconductor layer 1031 may include: multiple connecting portions 10311 corresponding one-to-one to the multiple sub-light-emitting functional layers 103a, and auxiliary portions 10312 connected to the multiple connecting portions 10311.

[0399] In which, each connecting portion 10311 in the first semiconductor layer 1031 can be connected to the corresponding sub-light-emitting functional layer 103a, and the outer boundary of the orthographic projection of each connecting portion 10311 on the second substrate 600 can completely coincide with the outer boundary of the orthographic projection of the corresponding sub-light-emitting functional layer 103a on the first substrate 300.

[0400] In the present application, the multiple connecting portions 10311 and the auxiliary portions 10312 in the first semiconductor layer 1031 form an integral structure, and the material of the connecting portions 10311 in the first semiconductor layer 1031 can be the same as the material of the auxiliary portions 10312. It is understood that the multiple connecting portions 10311 and the auxiliary portions 10312 in the first semiconductor layer 1031 are arranged in a direction parallel to the extended surface of the second substrate 600, and the first semiconductor layer 1031 is a planar structure arranged in an entire layer. All portions of the first semiconductor layer 1031 except the multiple connecting portions 10311 are auxiliary portions 10312. The multiple connecting portions 10311 can be connected by the auxiliary portions 10312 in the first semiconductor layer 1031.

[0401] Optionally, the light-emitting chip structure 100 further includes: a first lens structure 106 located between the light-emitting unit 103 and the color conversion unit 104 , wherein the orthographic projection of the first lens structure 106 on the first substrate 300 overlaps with the orthographic projection of at least one sub-light-emitting functional layer 103a on the first substrate 300 .

[0402] For example, the first lens structure 106 may be located in the connection layer 105 between the light emitting unit 103 and the color conversion unit 104 , such as at least a portion of the connection layer 105 is located on a side of the first lens structure 106 away from the light emitting unit 103 .

[0403] The orthographic projection of the first lens structure 106 on the second substrate 600 overlaps with the orthographic projection of at least one sub-light-emitting functional layer 103a on the second substrate 600. Light emitted by the sub-light-emitting functional layer 103a can pass through the first lens structure 106 and then be converted by the color conversion unit 104.

[0404] The first lens structure 106 can be provided to destroy the total reflection of light inside the first semiconductor layer 1031 , thereby preventing the light from generating an optical waveguide phenomenon and thus preventing light leakage from the edge.

[0405] In summary, the embodiments of the present application provide a light-emitting chip structure comprising a first electrode, a second electrode, a light-emitting unit, a color conversion unit, and a first lens structure located between the light-emitting unit and the color conversion unit, located on a second substrate. This first lens structure disrupts total internal reflection of light within the first semiconductor layer, thereby preventing light from waveguiding and light leakage from the edges of the light-emitting chip structure.

[0406] Optionally, the first lens structure 106 is disposed in contact with the light-emitting unit 103. The primary function of the first lens structure 106 is to converge the first light emitted by the sub-light-emitting functional layer 103a. For example, assume that the refractive index of the first lens structure 106 is equal to that of the second sub-layer 1031b in the first semiconductor layer 1031, and is less than that of the connecting layer 105. This can disrupt total internal reflection of light within the first semiconductor layer 1031, thereby preventing the light from generating optical waveguides.

[0407] 32 , the first lens structure 106 includes a first surface 106 a extending along the extension surface of the first semiconductor layer 1031, and a second surface 106 b convex toward the color conversion unit 104. For example, the first surface 106 a of the first lens structure 106 may contact the surface of the first semiconductor layer 1031 of the light-emitting unit 103, and the second surface 106 b may be a curved surface.

[0408] Optionally, there may be multiple first lens structures 106. The orthographic projection of each of the multiple sub-light-emitting functional layers 103a on the second substrate 600 overlaps with the orthographic projection of at least one first lens structure 106 on the second substrate 600. Thus, for each sub-light-emitting functional layer 103a, the light emitted by the sub-light-emitting functional layer 103a can be converged by the corresponding first lens structure 106 and then converted to color by the color conversion unit 104.

[0409] Referring to Figure 32 , a first gap G, filled with a connecting layer 105, exists between each first lens structure 106 and the color conversion unit 104. In other words, the first lens structure 106 and the color conversion unit 104 are not in contact, but are connected by the connecting layer 105. Alternatively, referring to Figure 33 , at least one first lens structure 106 is in contact with the color conversion unit 104. This allows the at least one first lens structure 106 to provide support, preventing significant variations in the thickness of the connecting layer 105 at different locations when the color conversion unit 104 and the light-emitting unit 103 are attached, thereby affecting the light output effect.

[0410] Referring to Figure 34 , first lens structure 106 is disposed in contact with color conversion unit 104. The primary function of first lens structure 106 is to homogenize the first light emitted by sub-luminescent functional layer 103a. At least a portion of connecting layer 105, located between light-emitting unit 103 and color conversion unit 104, is located on the side of first lens structure 106 away from color conversion unit 104.

[0411] 34 , the first lens structure 106 includes a first surface 106a extending along the extension surface of the first substrate 300, and a second surface 106b protruding toward the light-emitting unit 103. For example, the first surface 106a of the first lens structure 106 may contact the surface of the first encapsulation layer 1045 of the color conversion unit 104, and the second surface 106b may be a curved surface.

[0412] Optionally, there may be multiple first lens structures 106. The orthographic projection of each of the multiple sub-light-emitting functional layers 103a on the second substrate 600 overlaps with the orthographic projection of at least one first lens structure 106 on the second substrate 600. Thus, for each sub-light-emitting functional layer 103a, the light emitted by the sub-light-emitting functional layer 103a can be homogenized by the corresponding first lens structure 106 and then converted in color by the color conversion unit 104, thereby maximizing the vertical emission of the light.

[0413] Referring to Figure 34 , a first gap G, filled with a connecting layer 105, exists between each first lens structure 106 and the light-emitting unit 103. In other words, the first lens structure 106 and the light-emitting unit 103 are not in contact, but are connected by the connecting layer 105. Alternatively, referring to Figure 35 , at least one first lens structure 106 is in contact with the light-emitting unit 103. This allows the at least one first lens structure 106 to provide support, preventing significant variations in the thickness of the connecting layer 105 at different locations when the color conversion unit 104 and the light-emitting unit 103 are bonded together, thereby affecting the light output effect.

[0414] Optionally, the size A of the first lens structure 106 can be larger than the size B of the light hole K1, and the orthographic projection of the first lens structure 106 on the second substrate 600 overlaps the orthographic projection of the light hole K1 on the second substrate 600. In this case, the first lens structure 106 can better cover the first semiconductor layer 1031 overlapping with the light hole K1, so that the first lens structure 106 can enable more light with a larger refraction angle emitted by the light-emitting unit 103 to enter the connecting layer 105 without being totally reflected within the first semiconductor layer 1031. This improves the problem of light emitted by the sub-light-emitting functional layer 103a being totally reflected at the interface between the first semiconductor layer 1031 and the first lens structure 106 within the light hole K1, improves light leakage in each pixel area, and helps to increase the brightness of each pixel area and improve the display image quality.

[0415] Alternatively, the size A of the first lens structure 106 can be equal to the size B of the light hole K1, and the orthographic projection of the first lens structure 106 on the second substrate 600 overlaps with the orthographic projection of the light hole K1 on the second substrate 600. In this case, the first lens structure 106 can cover the first semiconductor layer 1031 that overlaps with the light hole K1, so that the first semiconductor layer 1031 can be used to allow more light with a larger refraction angle emitted by the sub-light-emitting functional layer 103a to enter the connecting layer 105 without undergoing total internal reflection, thereby improving the problem of total internal reflection of light emitted by the sub-light-emitting functional layer 103a at the interface between the first semiconductor layer 1031 and the first lens structure 106 within the light hole K1. At the same time, it can also prevent the light refracted by the first lens structure 106 from entering the opening area K2 of other sub-pixels adjacent to the sub-pixel due to the excessive size of the first lens structure 106 corresponding to the light hole K1, thereby avoiding problems such as color shift.

[0416] Alternatively, the size A of the first lens structure 106 is smaller than the size B of the light-through hole K1, and the orthographic projection of the first lens structure 106 on the second substrate 600 is located within the orthographic projection of the light-through hole K1 on the second substrate 600, and covers the orthographic projection of the sub-light-emitting functional layer 103a on the second substrate 600. That is, the first lens structure 106 is retracted a certain distance relative to the light-through hole K1. In this case, the first lens structure 106 can cover the first semiconductor layer 1031 that overlaps with the light-through hole K1, so that the first semiconductor layer 1031 can be used to allow more light with a larger refraction angle emitted by the sub-light-emitting functional layer 103a to enter the connecting layer 105 without undergoing total internal reflection, thereby improving the problem of total internal reflection of light emitted by the sub-light-emitting functional layer 103a at the interface between the first semiconductor layer 1031 and the first lens structure 106 in the light-through hole K1. At the same time, it can also prevent the first lens structure 106 corresponding to the light hole K1 from being too large, causing the light refracted by the first lens structure 106 to enter the opening area K2 of other sub-pixels adjacent to the sub-pixel, thereby avoiding problems such as color deviation.

[0417] In the embodiment of the present application, when the refractive index n3 of the first lens structure 106 is greater than the refractive index n1 of the first semiconductor layer 1031, when light enters the first lens structure 106 from the first semiconductor layer 1031, the light enters the medium with a lower refractive index from the medium with a higher refractive index. Total internal reflection does not occur at the interface between the first semiconductor layer 1031 and the first lens structure 106, allowing light at any angle to sequentially enter the first semiconductor layer 1031 and the first lens structure 106.

[0418] Referring to Figure 64, the first lens structure 106 can be approximated as a triangle, where the base of the triangle is the base of the first lens structure 106, and the two hypotenuses of the triangle are extensions of the surface tangent lines at the two base corners of the first lens structure 106. The law of refraction shows that n3×sinξ=n1×sinδ. Since light does not undergo total internal reflection after entering the first lens structure 106 from the first semiconductor layer 1031, there is no need to limit the magnitude of the incident angle ξ of the light irradiating from the first semiconductor layer 1031 to the first lens structure 106. The value of sinξ ranges from 0 to 1. Furthermore, the refraction angle δ of the light refracted into the first lens structure 106 ranges from 0 to arcsin n3 / n1.

[0419] When the first lens structure 106 is approximately regarded as a triangle, the relationships of the respective angles satisfy: 90° - δ = θ + β = 90° - α + β, and α = β + δ. Here, δ is the refraction angle when the light is refracted into the first lens structure 106, β is the incident angle when the light in the first lens structure 106 irradiates the side surface of the first lens structure 106, α is the base angle of the first lens structure 106, and θ is the complementary angle of the base angle α of the first lens structure 106.

[0420] Since the refractive index n3 of the first lens structure 106 is greater than the refractive index n2 of the film layer (such as the connecting layer 105) that is away from the first semiconductor layer 1031 and contacts the first lens structure 106, total reflection may occur. Therefore, it is necessary to set the incident angle β to be less than the critical angle of total reflection arcsin n2 / n3.

[0421] That is, it is necessary to satisfy the conditions: δ < arcsin n3 / n1 and β < arcsin n2 / n3. That is, the base angle α of the first lens structure 106 satisfies: α < arcsin n3 / n1 + arcsin n2 / n3.

[0422] Furthermore, referring to FIG. 65, when the first lens structure 106 is approximately regarded as a triangle (the base of the triangle is the base of the first lens structure 106, and the two hypotenuses of the triangle are the extension lines of the surface tangents at the two base angle positions of the first lens structure 106), the relationships of the respective angles can satisfy: 90° - δ = θ + β = 90° - α + β, and α = β + δ. Here, δ is the refraction angle when the light is refracted into the first lens structure 106, β is the incident angle when the light in the first lens structure 106 irradiates the side surface of the first lens structure 106, α is the base angle of the first lens structure 106, and θ is the complementary angle of the base angle α of the first lens structure 106.

[0423] Since the refractive index n3 of the first lens structure 106 is greater than the refractive index n2 of the connecting layer 105, it is necessary to set the incident angle β to be less than the critical angle arcsin n2 / n3. Based on δ < arcsin n3 / n1 and β < arcsin n2 / n3, it can be known that α > δ - β, that is, α > arcsin n3 / n1 - arcsin n2 / n3.

[0424] That is, as a possible case, when the refractive index n3 of the first lens structure 106 is greater than the refractive index of the first semiconductor layer 1031 and greater than the refractive index of the connecting layer 105, if arcsin n3 / n1 - arcsin n2 / n3 ≥ 0, and the bottom angle α of the first lens structure 106 is set to satisfy: arcsin n3 / n1 - arcsin n2 / n3 < α < arcsin n3 / n1 + arcsin n2 / n3, the incident angle β of the light when refracted to the interface between the first lens structure 106 and the connecting layer 105 can be made less than the critical angle arcsin n2 / n3, so as to prevent total internal reflection from occurring at the interface between the first lens structure 106 and the connecting layer 105. Furthermore, the light incident on the first lens structure 106 can all be refracted into the connecting layer 105, which is conducive to preventing the problem of light leakage and improving the display picture quality.

[0425] It should be noted that when the refractive index n3 of the first lens structure 106 is equal to the refractive index n1 of the first semiconductor layer 1031 (n1 = n3), the light will not be refracted at the interface between the first semiconductor layer 1031 and the first lens structure 106, but can directly exit to the interface between the first lens structure 106 and the connecting layer 105, that is, ζ = δ. In this case, the bottom angle α of the first lens structure 106 can also satisfy the following condition: arcsin n3 / n1 - arcsin n2 / n3 < α < arcsin n3 / n1 + arcsin n2 / n3. Additionally, the bottom angle α can be less than 90°.

[0426] If arcsin n3 / n1 - arcsin n2 / n3 < 0, then the bottom angle α of the first lens structure 106 satisfies: 0 < α < arcsin n3 / n1 + arcsin n2 / n3. That is, when the bottom angle α satisfies the condition arcsin n3 / n1 - arcsin n2 / n3 < α < arcsin n3 / n1 + arcsin n2 / n3, it is also necessary to make the bottom angle α greater than 0.

[0427] As another possible case, when the refractive index of the first lens structure 106 is greater than the refractive index of the connecting layer 105 and the refractive index of the first lens structure 106 is less than the refractive index of the first semiconductor layer 1031, the bottom angle α of the refractive index of the first lens structure 106 can also satisfy: arcsin n3 / n1 - arcsin n2 / n3 < α < arcsin n3 / n1 + arcsin n2 / n3.

[0428] In an embodiment of the present application, to further address the issue of light leakage from the edge of the first semiconductor layer 1031, with reference to FIG37 , the light-emitting chip structure 100 further includes a first light-shielding structure 107. The first light-shielding structure 107 wraps around the edge of the first semiconductor layer 1031. Alternatively, with reference to FIG39 , the first light-shielding structure 107 includes a first light-shielding portion 1071 located on the surface of the first semiconductor layer 1031 on the side close to the second substrate 600. Alternatively, with reference to FIG40 , the first light-shielding structure 107 includes the first light-shielding portion 1071 located on the edge of the surface of the first semiconductor layer 1031 on the side close to the second substrate 600, and a second light-shielding portion 1072 located on the edge of the surface of the first semiconductor layer 1031 on the side away from the second substrate 600.

[0429] The first light-shielding structure 107 can be used to absorb light that strikes the first light-shielding structure 107. Therefore, even if light is totally reflected within the first semiconductor layer 1031 and emitted from the edge of the first semiconductor layer 1031, the first light-shielding structure 107 can absorb the light emitted from the edge, thereby preventing the light from leaking out of the edge and solving the problem of edge light leakage.

[0430] Optionally, referring to FIG41 , the edge of the first semiconductor layer 1031 may be a pre-cut edge, that is, the side edge of the first semiconductor layer 1031 includes a first pre-cut edge S1, a second pre-cut edge S2, and an intermediate side edge S3 located between the first pre-cut edge S1 and the second pre-cut edge S2. A certain angle is formed between the extension surfaces of the first pre-cut edge S1 and the intermediate side edge S3, and between the second pre-cut edge S2 and the intermediate side edge S3.

[0431] For example, when the first light-shielding structure 107 wraps around the edge of the first semiconductor layer 1031, the first light-shielding structure 107 can wrap around the first pre-cut edge S1 and the second pre-cut edge S2. When the first light-shielding structure 107 includes a first light-shielding portion 1071 located at the edge of the surface of the first semiconductor layer 1031 on the side close to the second substrate 600, the first light-shielding portion 1071 can wrap around the first pre-cut edge S1. When the first light-shielding structure 107 includes a first light-shielding portion 1071 and a second light-shielding portion 1072, the first light-shielding portion 1071 can wrap around the first pre-cut edge S1, and the second light-shielding portion 1072 can wrap around the second pre-cut edge S2.

[0432] In the embodiment of the present application, the edge of the first semiconductor layer 1031 is an inclined surface facing the first substrate 300. For example, the edge of the first semiconductor layer 1031 away from the second substrate 600 is closer to the center of the light-emitting component than the edge of the first semiconductor layer 1031 close to the second substrate 600.

[0433] Optionally, the light-emitting chip structure 100 further includes a second light-shielding structure 108, which is located on a surface of the driving unit 200 and / or the first substrate 300 facing the light-emitting chip structure 100. The orthographic projection of the inclined surface on the second substrate 600 overlaps with the orthographic projection of the second light-shielding structure 108 on the second substrate 600. For example, the orthographic projection of the second light-shielding structure 108 on the second substrate 600 may cover the orthographic projection of the inclined surface on the second substrate 600.

[0434] Optionally, the second light-shielding structure 108 may be annular and include an outer contour edge. The orthographic projection of the inclined surface on the second substrate 600 is located within the orthographic projection of the outer contour edge on the second substrate 600. In other words, the second light-shielding structure 108 may have a portion extending beyond the outer contour edge of the first semiconductor layer 1031. This allows light emitted from the edge of the first semiconductor layer 1031 to be absorbed by the second light-shielding structure 108 as much as possible, thereby preventing light leakage from the edge.

[0435] In summary, the embodiments of the present application provide a light-emitting chip structure comprising a first electrode, a second electrode, a light-emitting unit, a color conversion unit, and a first lens structure located between the light-emitting unit and the color conversion unit, located on a second substrate. This first lens structure disrupts total internal reflection of light within the first semiconductor layer, thereby preventing light from waveguiding and light leakage from the edges of the light-emitting chip structure.

[0436] Figure 66 is a schematic diagram of the structure of a display substrate provided in an embodiment of the present application. Referring to Figure 66 , the display substrate includes a driver backplane 111 and the light-emitting chip structure 100 provided in the above embodiment. Driver backplane 111 includes a driver substrate 1111 and solder pads located on driver substrate 1111. The solder pads include a plurality of conductive pads 1112. Conductive pads 1112 are used to electrically connect to light-emitting chip structure 100.

[0437] 63 , a plurality of light-emitting chip structures 100 are arranged in an array on a driving backplane 111 . The driving backplane 111 may include a driving circuit that can provide driving signals for the plurality of light-emitting chip structures 100 .

[0438] Optionally, the display substrate may be a display screen in a mobile phone, a laptop computer, or a flat-panel computer, or an outdoor advertising screen.

[0439] Since the display substrate can have substantially the same technical effects as the light-emitting chip structure described in the previous embodiment, the technical effects of the display substrate will not be repeatedly described here for the purpose of brevity.

[0440] In an embodiment of the present application, referring to FIG. 67 , the display substrate includes a driving backplane 111 and a light-emitting chip structure 100 as provided in the above embodiment.

[0441] 63 , a plurality of light-emitting chip structures 100 are arranged in an array on a driving backplane 111 . The driving backplane 111 may include a driving circuit that can provide driving signals for the plurality of light-emitting chip structures 100 .

[0442] The edge of the first semiconductor layer 1031 is a bevel, and the second shading structure 108 included in the light-emitting chip structure 100 is located on the surface of the driving backplane facing the light-emitting chip structure 100, and the orthographic projection of the bevel on the driving backplane 111 overlaps with the orthographic projection of the second shading structure 108 on the driving backplane.

[0443] Optionally, the second light-shielding structure 108 is annular and includes an outer contour edge, and the orthographic projection of the inclined surface on the driving backplane is located inside the orthographic projection of the outer contour edge on the driving backplane.

[0444] Since light is totally reflected by the first semiconductor layer 1031 to form an optical waveguide and then emitted from the inclined surface of the first semiconductor layer 1031, in order for the second light-shielding structure 108 to block all light emitted from the inclined surface of the first semiconductor layer 1031, the length h of the second light-shielding structure 108 extending beyond the edge of the first semiconductor layer 1031 close to the driving backplane needs to satisfy the following requirement:

[0445] Where d is the distance between the surface of the first semiconductor layer 1031 away from the driver backplate 111 and the surface of the second light-shielding structure 108 closer to the first semiconductor layer 1031, and γ is the angle between the inclined surface and the surface of the first semiconductor layer 1031 away from the driver backplate. Referring to Figure 67, the distance d can be equal to the sum of the thickness d1 of the first semiconductor layer 1031 and the distance d2 between the first semiconductor layer 1031 and the second light-shielding structure 108. Alternatively, if d2 is equal to 0, then d can be equal to the thickness d1 of the first semiconductor layer 1031.

[0446] It should be noted that the side of the first semiconductor layer 1031 can be made into an inverted triangular slope by laser ablation, so that the light from the slope of the first semiconductor layer 1031 can be emitted in a direction away from the second substrate, and the second shading structure 108 needs to be located on the side of the first semiconductor layer 1031 away from the second substrate 600.

[0447] For example, assuming the refractive index of the first semiconductor layer 1031 is 2.45 and the refractive index of the connecting layer 105 is 1.56, according to the formula for the critical angle of total internal reflection, the critical angle is arcsin 1.56 / 2.45≈39.5°. In other words, light with an incident angle greater than 39.5° will be totally reflected at the interface between the first semiconductor layer 1031 and the connecting layer 105. Furthermore, the totally reflected light will continue to reflect within the first semiconductor layer 1031 and will not be able to enter the connecting layer 105, resulting in the light being unable to continue to be emitted upward from the display substrate. In addition, the total internal reflection angle of light from the first semiconductor layer 1031 into the air is arcsin 1 / 2.45≈24.1°. Therefore, only light with an incident angle greater than 24.1° but less than 39.5° will be emitted from the upper and lower surfaces of the first semiconductor layer 1031 where only air and the first semiconductor layer 1031 are in contact, i.e., the inclined surface.

[0448] Considering only the mirror surface, referring to Figure 68, the derivation process of the above formula is as follows: According to triangle ABD, it can be obtained that: Then we can conclude According to the triangle ADC, we can get: Then we can conclude

[0449] Therefore, the second light shielding structure 108 exceeds the length of the edge of the first semiconductor layer 1031 close to the driving backplane.

[0450] Optionally, the length h of the second light shielding structure 108 beyond the edge of the first semiconductor layer 1031 close to the driving backplane may also be less than Right now For example, h can be greater than or equal to For example, the value of h can be as well as etc.

[0451] When h is less than In this case, the second light shielding structure 108 can absorb part of the light emitted from the inclined surface of the first semiconductor layer 1031, thereby reducing light leakage.

[0452] Optionally, since light emitted from the first semiconductor layer 1031 may be scattered, to ensure that the second light-shielding structure 108 absorbs light, the length H of the second light-shielding structure 108 can be set to H + error. For example, the error can be greater than or equal to 20% of h. In other words, the length H of the second light-shielding structure 108 can be greater than or equal to 1.2*h.

[0453] Optionally, the angle γ between the inclined surface and the surface of the first semiconductor layer 1031 away from the driving back plate may be in a range of 30 degrees to 80 degrees, for example, 45 degrees.

[0454] Optionally, the distance d ranges from 2 μm (micrometers) to 6 μm, for example, 4 μm. If d2 is equal to 0, the thickness d1 of the first semiconductor layer 1031 can range from 2 μm to 6 μm, for example, 4 μm.

[0455] Optionally, the display substrate may be a display screen in a mobile phone, a laptop computer, or a flat-panel computer, or an outdoor advertising screen.

[0456] Since the display substrate can have substantially the same technical effects as the light-emitting chip structure described in the previous embodiment, the technical effects of the display substrate will not be repeatedly described here for the purpose of brevity.

[0457] The terms used in the embodiments of this application are only used to explain the embodiments of this application and are not intended to limit this application. Unless otherwise defined, the technical terms or scientific terms used in the embodiments of this application should have the common meaning understood by people with ordinary skills in the field to which this application belongs.

[0458] The terms used in the embodiments of this application are intended solely to illustrate the embodiments of this application and are not intended to limit this application. Unless otherwise defined, technical or scientific terms used in the embodiments of this application should have the same ordinary meaning as those understood by persons of ordinary skill in the art to which this application belongs. The terms "first," "second," "third," and similar terms used in this patent specification and claims do not denote any order, quantity, or importance, but are simply used to distinguish between different components. Similarly, terms such as "a" or "an" do not denote a limitation of quantity, but rather denote the presence of at least one. Terms such as "include" or "comprising" and similar terms mean that the elements or objects listed before "include" or "comprising" include the elements or objects listed after "include" or "comprising," and their equivalents, and do not exclude other elements or objects. Terms such as "connected" or "connected" are not limited to physical or mechanical connections but may include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are used solely to indicate relative positions. When the absolute position of the described objects changes, the relative positions may also change accordingly.

[0459] The above description is merely an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.

Claims

1. A light emitting component, characterized in that: The light emitting component comprises: A light-emitting chip structure, comprising: a first electrode, a second electrode, and light-emitting units electrically connected to the first electrode and the second electrode respectively; a driving unit, the driving unit comprising a third electrode, a fourth electrode, and a driving circuit, the third electrode and the fourth electrode being located on a side of the driving unit facing the light-emitting unit, the third electrode and the fourth electrode being electrically connected to the driving circuit, respectively, the third electrode being electrically connected to the first electrode, and the fourth electrode being electrically connected to the second electrode; a first substrate, located on a side of the driving unit away from the light-emitting unit, the first substrate having a plurality of through holes; a plurality of connection structures, each located in the plurality of through holes, the connection structures being electrically connected to the driving circuit; and a plurality of pins, each of the pins being located on a side of the corresponding connecting structure away from the driving unit, the pins being electrically connected to the connecting structure; Wherein, a surface of the connection structure away from the pins and a surface of the first substrate away from the pins are located in the same plane.

2. The light emitting assembly according to claim 1, characterized in that: A surface of the connection structure close to the pin and a surface of the first substrate close to the pin are located in the same plane.

3. The light emitting assembly according to claim 1, wherein: The first substrate is made of glass.

4. The light emitting assembly according to claim 1, wherein: The thickness of the first substrate ranges from 0.2 mm to 0.3 mm.

5. The light emitting assembly according to claim 1, characterized in that: The pin is in direct contact with the connection structure; The material of the connection structure includes copper, and the material of the pin includes at least one of copper and tin.

6. The light emitting assembly according to claim 1, wherein: The light emitting assembly comprises: a second substrate located on a side of the light emitting unit away from the driving unit; the light emitting assembly comprises an isolation portion; The isolation portion is located between the first substrate and the second substrate, and the isolation portion, the first substrate, and the second substrate constitute a closed space surrounding the light-emitting chip structure and the driving unit, or, The isolation portion is located between the first substrate and the driving unit. The isolation portion, the driving unit, and the second substrate form a closed space surrounding the light-emitting chip structure.

7. The light emitting assembly according to claim 6, characterized in that: The isolation portion includes a first sub-isolation portion and a second sub-isolation portion, wherein the first sub-isolation portion is arranged in contact with the second substrate; and the second sub-isolation portion is arranged in contact with at least one of the first substrate and the driving unit. One of the first sub-isolating portion and the second sub-isolating portion includes a groove portion, and at least a portion of the other of the first sub-isolating portion and the second sub-isolating portion is located in the groove portion.

8. The light emitting assembly according to claim 6, characterized in that: The isolation portion is made of light-absorbing material.

9. The light emitting assembly according to any one of claims 1 to 8, characterized in that: There are multiple light-emitting units, and the multiple light-emitting units include a first color light-emitting unit, a second color light-emitting unit, and a third color light-emitting unit; The first color, the second color and the third color are different from each other.

10. The light emitting assembly according to any one of claims 1 to 8, characterized in that: The light-emitting chip structure includes a color conversion unit located on a side of the light-emitting unit away from the first substrate; In which, the light-emitting unit includes: a plurality of sub-light-emitting functional layers, and a first semiconductor layer located on the light-emitting side of the plurality of sub-light-emitting functional layers, the first semiconductor layer includes: a plurality of connecting parts corresponding one-to-one to the plurality of sub-light-emitting functional layers, and an auxiliary part connected to the plurality of connecting parts, the connecting parts are connected to the corresponding sub-light-emitting functional layers, at least part of the auxiliary parts is located between adjacent connecting parts, and the auxiliary parts and the connecting parts are an integrated structure.

11. The light emitting assembly according to claim 10, characterized in that: The light-emitting chip structure includes a second substrate located on a side of the color conversion unit away from the driving unit; The color conversion unit includes: a light shielding layer located on one side of the second substrate, the light shielding layer having a plurality of light through holes; a defining dam layer located on a side of the light-shielding layer facing away from the second substrate, the defining dam layer having a plurality of opening areas corresponding one-to-one to the plurality of light-through holes, and the plurality of opening areas corresponding one-to-one to the plurality of sub-light-emitting functional layers, wherein orthographic projections of the opening areas on the second substrate overlap with orthographic projections of corresponding light-through holes on the second substrate, and overlap with orthographic projections of corresponding sub-light-emitting functional layers on the substrate; an optical functional layer located in the opening area, at least a portion of the optical functional layer being used to convert the color of light entering the optical functional layer; And, a filter layer is located between the second substrate and the optical functional layer; the filter layer includes a plurality of filter units corresponding one-to-one to the plurality of light holes, and the orthographic projections of the filter units on the second substrate overlap with the orthographic projections of the corresponding light holes on the second substrate.

12. The light emitting assembly according to claim 11, wherein: The plurality of sub-light emitting functional layers include: a first sub-light emitting functional layer, a second sub-light emitting functional layer and a third sub-light emitting functional layer; The multiple opening areas include: a first opening area, a second opening area and a third opening area. The first opening area is arranged opposite to the first sub-light-emitting functional layer, the second opening area is arranged opposite to the second sub-light-emitting functional layer, and the third opening area is arranged opposite to the third sub-light-emitting functional layer.

13. The light emitting assembly according to claim 10, characterized in that: The first electrode is connected to the first semiconductor layer; The auxiliary portion includes a first auxiliary portion, a second auxiliary portion, and a third auxiliary portion; the orthographic projection of the first auxiliary portion on the second substrate overlaps with the orthographic projection of the first electrode on the second substrate; a portion of the second auxiliary portion is located between adjacent connecting portions, and another portion is located between the first auxiliary portion and the connecting portion; the third auxiliary portion is arranged around the first auxiliary portion, the second auxiliary portion, and the plurality of connecting portions, and the auxiliary portion is made of the same material as the connecting portion; The sub-light emitting functional layer includes: a second semiconductor layer and the light emitting layer; the second electrode, the second semiconductor layer and the light emitting layer are stacked in a direction perpendicular to and toward the second substrate; In the embodiment, the light emitting layer is connected to the corresponding connecting portion in the first semiconductor layer.

14. The light emitting assembly according to claim 13, characterized in that: The first semiconductor layer includes: a first sublayer and a second sublayer stacked in a direction perpendicular to and toward the second substrate, the first sublayer being located between the second sublayer and the light-emitting layer, the first sublayer being made of N-type doped gallium nitride, and the second sublayer being a gallium nitride buffer layer; The material of the second semiconductor layer includes P-type doped gallium nitride, and the light-emitting layer is a multi-quantum well layer.

15. The light emitting assembly according to claim 10, characterized in that: The light-emitting chip structure includes a first lens structure located between the light-emitting unit and the color conversion unit; The orthographic projection of the first lens structure on the first substrate overlaps with the orthographic projection of at least one sub-light-emitting functional layer on the first substrate.

16. The light emitting assembly according to claim 15, characterized in that: The first lens structure is arranged in contact with the light emitting unit and is configured to converge the light emitted by the light emitting unit; The light-emitting chip structure further includes a connection layer located between the light-emitting unit and the color conversion unit, and at least a portion of the connection layer is located on a side of the first lens structure away from the light-emitting unit.

17. The light emitting assembly according to claim 16, characterized in that: The first lens structure includes a first surface extending along the extension surface of the first semiconductor layer, and a second surface convex toward one side of the color conversion unit.

18. The light emitting assembly according to claim 16, wherein: There are multiple first lens structures; The orthographic projection of each of the plurality of sub-light-emitting functional layers on the first substrate overlaps with the orthographic projection of at least one of the first lens structures on the first substrate; There is a first space filled by the connection layer between each of the first lens structures and the color conversion unit, or at least one of the first lens structures is arranged in contact with the color conversion unit.

19. The light emitting assembly according to claim 15, wherein: The first lens structure is arranged in contact with the color conversion unit; The light-emitting chip structure further includes a connection layer located between the light-emitting unit and the color conversion unit, and at least a portion of the connection layer is located on a side of the first lens structure away from the color conversion unit.

20. The light emitting assembly according to claim 19, wherein: The first lens structure includes a first surface extending along the extension surface of the first substrate, and a second surface convex toward one side of the light emitting unit.

21. The light emitting assembly according to claim 20, characterized in that There are multiple first lens structures; The orthographic projection of each of the plurality of sub-light-emitting functional layers on the first substrate overlaps with the orthographic projection of at least one of the first lens structures on the first substrate; There is a first gap filled by the connection layer between each of the first lens structures and the light-emitting unit, or at least one of the first lens structures is arranged in contact with the light-emitting unit.

22. The light emitting assembly according to claim 10, wherein: The light-emitting component includes a second substrate located on a side of the color conversion unit away from the driving unit, and a second lens structure located on a side of the second substrate away from the color conversion unit; The orthographic projection of the second lens structure on the second substrate overlaps with the orthographic projection of the sub-light-emitting functional layer on the second substrate.

23. The light emitting assembly according to claim 22, characterized in that: The second lens structure includes a third surface extending along the extension surface of the second substrate, and a fourth surface convex toward a side away from the second substrate, wherein the third surface is closer to the second substrate than the fourth surface; The second lens structure is used to converge the light emitted by the color conversion unit.

24. The light emitting assembly according to any one of claims 10 to 23, characterized in that: The light-emitting chip structure further includes a first light-shielding structure; The first light-shielding structure wraps around the edge of the first semiconductor layer, or The first light shielding structure includes a first light shielding portion located at an edge of a surface of the first semiconductor layer close to the second substrate, or The first light shielding structure includes a first light shielding portion located at an edge of a surface of the first semiconductor layer close to the second substrate, and a second light shielding portion located at an edge of a surface of the first semiconductor layer away from the second substrate.

25. The light emitting assembly according to claim 10, wherein: The edge of the first semiconductor layer is an inclined surface facing the first substrate.

26. The light emitting assembly according to claim 25, characterized in that The light-emitting chip structure further includes a second light-shielding structure, and the second light-shielding structure is located on a surface of the driving unit and / or the first substrate facing the light-emitting chip structure; An orthographic projection of the inclined surface on the first substrate overlaps with an orthographic projection of the second light-shielding structure on the first substrate.

27. The light emitting assembly according to claim 26, characterized in that The second light-shielding structure is annular and includes an outer contour edge. The orthographic projection of the inclined surface on the first substrate is located inside the orthographic projection of the outer contour edge on the first substrate.

28. The light emitting assembly according to any one of claims 10 to 27, characterized in that: The light emitting assembly includes a second substrate located on a side of the color conversion unit away from the driving unit; The light-emitting component includes a third light-shielding structure, and the third light-shielding structure wraps the edge of the second substrate.

29. A method for preparing a light-emitting component, characterized in that: The method comprises: Acquire a first target structure, the first target structure including a second substrate and a light-emitting chip structure located on the second substrate, the light-emitting chip structure including: a first electrode, a second electrode, and light-emitting units electrically connected to the first electrode and the second electrode respectively; Acquire a second target structure, wherein the second target structure includes a temporary substrate, a a first substrate on the temporary substrate, and a driving unit located on a side of the first substrate away from the temporary substrate, the driving unit comprising a third electrode, a fourth electrode and a driving circuit, the third electrode and the fourth electrode being electrically connected to the driving circuit respectively, the first substrate having a plurality of through holes, each of the through holes having a connecting structure therein, the connecting structure being connected to the driving circuit; Bonding the driving unit and the light-emitting chip structure together through a bonding process, electrically connecting the third electrode to the first electrode, and electrically connecting the fourth electrode to the second electrode; removing the temporary substrate from one side of the first substrate to expose the connection structure; A pin is formed on a side of the connection structure away from the driving unit, the pin is connected to the connection structure, and a surface of the connection structure away from the pin and a surface of the first substrate away from the pin are located in the same plane.

30. The display substrate according to claim 29, wherein Acquiring the temporary substrate, the first substrate, and the connection structure in the second target structure includes: obtaining a first initial substrate; forming a plurality of through holes on the first initial substrate using a laser device; forming a conductive material on the surface of the first initial substrate and in the plurality of through holes using an electroplating process; Using a grinding device to grind the first initial substrate and the conductive material on the surface of the first initial substrate to obtain a first substrate, wherein the thickness of the first substrate is less than that of the first initial substrate, and the conductive material in the plurality of through holes of the first substrate constitutes a plurality of the connection structures; The first substrate and a temporary substrate are bonded together, and the thickness of the temporary substrate is greater than that of the first substrate.

31. A method for preparing a light-emitting component, characterized in that: The method comprises: Acquire a first target structure, the first target structure including a second substrate and a light-emitting chip structure located on the second substrate, the light-emitting chip structure including: a first electrode, a second electrode, and light-emitting units electrically connected to the first electrode and the second electrode respectively; Acquire a second target structure, the second target structure comprising a temporary substrate, a temporary adhesive material on the temporary substrate, a plurality of pins, a first substrate, and a driving unit located on a side of the first substrate away from the temporary substrate, the driving unit comprising a third electrode, a fourth electrode and a driving circuit, The third electrode and the fourth electrode are electrically connected to the driving circuit respectively. The first substrate has a plurality of through holes, each of which has a connecting structure therein. The connecting structure is connected to the driving circuit and the pin. A surface of the connecting structure away from the pin and a surface of the first substrate away from the pin are located in the same plane. Bonding the driving unit and the light-emitting chip structure together through a bonding process, electrically connecting the third electrode to the first electrode, and electrically connecting the fourth electrode to the second electrode; The temporary substrate is removed from one side of the first substrate to expose the pins.

32. The method according to claim 31, characterized in that Acquiring the temporary substrate, temporary adhesive, multiple pins, first substrate, and connection structure in the second target structure includes: obtaining a first initial substrate; forming a plurality of through holes on the first initial substrate using a laser device; forming a conductive material on the surface of the first initial substrate and in the plurality of through holes using an electroplating process; Using a grinding device to grind the first initial substrate and the conductive material on the surface of the first initial substrate to obtain a first substrate, wherein the thickness of the first substrate is less than that of the first initial substrate, and the conductive material in the plurality of through holes of the first substrate constitutes a plurality of the connection structures; A plurality of pins are formed on one side of the first substrate, and the pins are connected to the connection structure; A temporary adhesive is used to bond the temporary substrate to a side of the first substrate where a plurality of pins are formed. The temporary adhesive covers the plurality of pins, and the thickness of the temporary adhesive is greater than or equal to the height of the pins.

33. A display substrate, characterized in that: The display substrate includes a driving backplane and a plurality of light-emitting components according to any one of claims 1 to 28, wherein the light-emitting components are arrayed on the driving backplane, and the driving backplane is electrically connected to the light-emitting components and provides driving signals to the light-emitting components.

34. A light-emitting chip structure, characterized in that: The light-emitting chip structure includes: a first electrode, a second electrode, a light-emitting unit, and a color conversion unit located on the second substrate; the first electrode and the second electrode are located on a side of the light-emitting unit away from the color conversion unit and are both electrically connected to the light-emitting unit; the color conversion unit is located on a light-emitting side of the light-emitting unit; The light-emitting unit includes: a plurality of sub-light-emitting functional layers, and a first semiconductor layer located on the light-emitting side of the plurality of sub-light-emitting functional layers, the first semiconductor layer includes: a plurality of connecting portions corresponding one-to-one to the plurality of sub-light-emitting functional layers, and an auxiliary portion connected to the plurality of connecting portions, the connecting portions being connected to the corresponding sub-light-emitting functional layers, at least a portion of the auxiliary portion being located between adjacent connecting portions, and the auxiliary portion and the connecting portion being an integral structure; The light-emitting chip structure further includes: a first lens structure located between the light-emitting unit and the color conversion unit, wherein an orthographic projection of the first lens structure on the first substrate overlaps with an orthographic projection of at least one sub-light-emitting functional layer on the first substrate.

35. The light-emitting chip structure according to claim 34, characterized in that: The first lens structure is arranged in contact with the light emitting unit and is configured to converge the light emitted by the light emitting unit; The light-emitting chip structure further includes a connection layer located between the light-emitting unit and the color conversion unit, and at least a portion of the connection layer is located on a side of the first lens structure away from the light-emitting unit.

36. The light-emitting chip structure according to claim 35, characterized in that: The first lens structure includes a first surface extending along the extension surface of the first semiconductor layer, and a second surface convex toward one side of the color conversion unit.

37. The light-emitting chip structure according to claim 35, characterized in that: There are multiple first lens structures; The orthographic projection of each of the plurality of sub-light-emitting functional layers on the second substrate overlaps with the orthographic projection of at least one of the first lens structures on the second substrate; There is a first space filled by the connection layer between each of the first lens structures and the color conversion unit, or at least one of the first lens structures is arranged in contact with the color conversion unit.

38. The light-emitting chip structure according to claim 34, characterized in that: The first lens structure is arranged in contact with the color conversion unit; The light-emitting chip structure further includes a connection layer located between the light-emitting unit and the color conversion unit, and at least a portion of the connection layer is located on a side of the first lens structure away from the color conversion unit.

39. The light-emitting chip structure according to claim 38, characterized in that: The first lens structure includes a first surface extending along the extension surface of the second substrate, and a second surface convex toward one side of the light emitting unit.

40. The light-emitting chip structure according to claim 39, characterized in that: There are multiple first lens structures; The orthographic projection of each of the plurality of sub-light-emitting functional layers on the second substrate overlaps with the orthographic projection of at least one of the first lens structures on the second substrate; There is a first space filled by the color conversion unit between each of the first lens structures and the color conversion unit, or at least one of the first lens structures is arranged in contact with the light-emitting unit.

41. The light-emitting chip structure according to claim 34, characterized in that: The base angle α of the first lens structure satisfies: in, n1 is the refractive index of the first semiconductor layer, n2 is the refractive index of the film layer of the first lens structure away from the first semiconductor layer and in contact with the first lens structure, n3 is the refractive index of the first lens structure, and n3 is greater than or equal to n1 and greater than n2.

42. The light-emitting chip structure according to claim 34, characterized in that: The base angle α of the first lens structure satisfies: in, n1 is the refractive index of the first semiconductor layer, n2 is the refractive index of the film layer of the first lens structure away from the first semiconductor layer and in contact with the first lens structure, n3 is the refractive index of the first lens structure, and n3 is greater than or equal to n1 and greater than n2.

43. The light-emitting chip structure according to claim 34, characterized in that: The light-emitting chip structure further includes a first light-shielding structure; The first light-shielding structure wraps around the edge of the first semiconductor layer, or The first light shielding structure includes a first light shielding portion located at an edge of a surface of the first semiconductor layer close to the second substrate, or The first light shielding structure includes a first light shielding portion located at an edge of a surface of the first semiconductor layer close to the second substrate, and a second light shielding portion located at an edge of a surface of the first semiconductor layer away from the second substrate.

44. A display substrate, characterized in that The display substrate includes a driving backplane and a plurality of light-emitting chip structures as described in any one of claims 34 to 43, wherein the plurality of light-emitting chip structures are arrayed on the driving backplane, and the driving backplane is connected to the light-emitting chip structure and provides a driving signal to the light-emitting chip structure.

45. A display substrate, characterized in that The display substrate comprises a driving backplane and a plurality of light-emitting chip structures according to any one of claims 34 to 43, wherein the plurality of light-emitting chip structures are arranged in an array on the driving backplane, and the driving backplane is connected to the light-emitting chip structures and provides driving signals to the light-emitting chip structures; Among them, the edge of the first semiconductor layer is a bevel, and the second shading structure included in the light-emitting chip structure is located on the surface of the driving backplane facing the light-emitting chip structure, and the orthographic projection of the bevel on the driving backplane overlaps with the orthographic projection of the second shading structure on the driving backplane.

46. ​​The display substrate according to claim 45, wherein The second light-shielding structure is annular and includes an outer contour edge. The orthographic projection of the inclined surface on the driving backplate is located inside the orthographic projection of the outer contour edge on the driving backplate.

47. The display substrate according to claim 46, wherein: The length h of the second light-shielding structure extending beyond the edge of the first semiconductor layer on the side close to the driving backplane satisfies: Wherein, d is the distance between the surface of the first semiconductor layer away from the driving unit and the surface of the second light-shielding structure close to the first semiconductor layer, and γ is the angle between the inclined surface and the surface of the first semiconductor layer away from the driving backplane.

48. The display substrate according to claim 47, wherein: The range of γ is 30 degrees to 80 degrees.

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