Semiconductor laser device and method for manufacturing semiconductor laser device

Abstract

A semiconductor laser device (10) is provided with: a submount (80) having a mounting surface (80a); a spacer (40) disposed on the mounting surface (80a); a semiconductor laser element (20) disposed above the spacer (40); and a bonding member (60) disposed between the mounting surface (80a) and the semiconductor laser element (20) and configured from a porous metal material that bonds the mounting surface (80a) and the semiconductor laser element (20). The semiconductor laser element (20) is provided with a bonding surface (30) facing the submount (80), and a semiconductor laminate (20S); the semiconductor laminate (20S) has a ridge (25R); the bonding surface (30) has a first region (31) that is a region facing the ridge (25R), and a second region (32) that is disposed along the first region (31); the bonding member (60) is bonded to the first region (31); and the spacer (40) is disposed at a position facing the second region (32).

Description

Semiconductor laser device and method for manufacturing semiconductor laser device

[0001] The present disclosure relates to a semiconductor laser device and a method for manufacturing a semiconductor laser device.

[0002] Semiconductor laser devices are known that include a submount and a semiconductor laser element mounted on the submount. Semiconductor laser devices are used as light sources for products in various fields, such as projectors, automotive headlamps, and laser processing equipment. In this type of semiconductor laser device, the use of a porous metal material as a joining member for joining the semiconductor laser element and the submount has been proposed (see, for example, Patent Documents 1 and 2). Such joining members are formed by sintering a metal paste containing minute metal particles.

[0003] By using such a joining member, the thermal conductivity between the semiconductor laser element and the submount can be increased, and therefore the heat dissipation characteristics of the semiconductor laser device can be improved.

[0004] JP 2015-188034 A JP 2006-202586 A

[0005] However, when using a bonding member made of such a porous metal material, the thickness of the bonding member tends to be greater than when using a bonding member made of solder, etc. Therefore, when bonding the semiconductor laser element to the submount, the semiconductor laser element is likely to tilt relative to the submount.

[0006] The present disclosure has been made to solve such problems, and aims to provide a semiconductor laser device and the like that can suppress tilt of the semiconductor laser element relative to the submount.

[0007] In order to achieve the above object, one aspect of the semiconductor laser device according to the present disclosure is a semiconductor laser device that emits laser light, comprising: a submount having a mounting surface; a spacer disposed on the mounting surface; an edge-emitting semiconductor laser element disposed above the spacer; and a bonding member disposed between the mounting surface and the semiconductor laser element and made of a porous metal material that bonds the mounting surface and the semiconductor laser element, wherein the semiconductor laser element has front and rear end faces that form a resonator of the laser light, a bonding surface facing the submount, a substrate, and a semiconductor laminate disposed between the substrate and the bonding surface, the semiconductor laminate having a ridge extending in a resonance direction of the laser light, the bonding surface having a first region facing the ridge and a second region disposed along the first region, the bonding member being bonded to the first region, and the spacer being disposed at a position facing the second region.

[0008] In order to achieve the above object, one aspect of a method for manufacturing a semiconductor laser device according to the present disclosure is a method for manufacturing a semiconductor laser device that emits laser light, the semiconductor laser device including: a submount having a mounting surface; a spacer; an edge-emitting semiconductor laser element; and a bonding member made of a porous metal material that bonds the mounting surface and the semiconductor laser element; the semiconductor laser element having front and rear end faces that form a resonator of the laser light, a bonding surface, a substrate, and a semiconductor laminate disposed between the substrate and the bonding surface; the semiconductor laminate having a ridge extending in a resonance direction of the laser light; The bonding surface has a first region that is a region facing the ridge and a second region that is arranged along the first region, and the manufacturing method of the semiconductor laser device includes a spacer arrangement step of arranging the spacer on the mounting surface, a paste arrangement step of arranging a metal paste containing metal particles in a region of the mounting surface different from the region where the spacer is arranged, a pressing step of pressing the first region against the metal paste while the first region of the semiconductor laser element is facing the metal paste and the second region is facing the spacer, and a heating step of heating the metal paste to form the bonding member.

[0009] According to the present disclosure, it is possible to provide a semiconductor laser device or the like that can suppress tilt of the semiconductor laser element relative to the submount.

[0010] 1 is a schematic plan view showing the overall configuration of a semiconductor laser device according to a first embodiment. FIG. 2 is a schematic cross-sectional view showing the overall configuration of a semiconductor laser device according to the first embodiment. FIG. 3 is a schematic cross-sectional view showing the overall configuration of a semiconductor laser element according to the first embodiment. FIG. 4 is a schematic plan view showing the configuration of a spacer according to the first embodiment. FIG. 5 is a schematic cross-sectional view showing a submount preparation step in a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 6 is a schematic plan view showing a spacer arrangement step in a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 7 is a schematic cross-sectional view showing a spacer arrangement step in a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 8 is a schematic plan view showing a paste arrangement step in a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 9 is a schematic cross-sectional view showing a paste arrangement step in a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 10 is a schematic first cross-sectional view showing a pressing step in a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 11 is a schematic cross-sectional view showing a heating step in a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 12 is a schematic side view showing a first configuration example of a semiconductor laser device according to the first embodiment. FIG. 13 is a schematic side view showing a second configuration example of a semiconductor laser device according to the first embodiment. 10 is a schematic cross-sectional view showing a third configuration example of a semiconductor laser device according to embodiment 1. FIG. 11 is a schematic cross-sectional view showing a configuration of a semiconductor laser device according to embodiment 2. FIG. 12 is a schematic cross-sectional view showing a configuration of a semiconductor laser element according to embodiment 2. FIG. 13 is a schematic cross-sectional view showing a configuration of a semiconductor laser device according to embodiment 3. FIG. 14 is a schematic cross-sectional view showing a configuration of a semiconductor laser element according to embodiment 3. FIG. 15 is a schematic cross-sectional view showing a configuration of a semiconductor laser device according to embodiment 4. FIG. 16 is a schematic plan view showing a configuration of a semiconductor laser device according to embodiment 5. FIG. 17 is a schematic cross-sectional view showing a configuration of a semiconductor laser device according to embodiment 6. FIG. 18 is a schematic cross-sectional view showing a paste placement step in a manufacturing method for a semiconductor laser device according to embodiment 6. FIG. 19 is a schematic cross-sectional view showing a configuration of a semiconductor laser device according to a modification of embodiment 6. FIG. 19 is a schematic plan view showing a configuration of a semiconductor laser device according to embodiment 7. FIG. 19 is a schematic plan view showing a configuration of a semiconductor laser device according to embodiment 8.10 is a schematic cross-sectional view showing the configuration of a semiconductor laser device according to an eighth embodiment. FIG. 11 is a schematic plan view showing the configuration of a semiconductor laser device according to a ninth embodiment. FIG. 12 is a schematic cross-sectional view showing the configuration of a semiconductor laser device according to a ninth embodiment.

[0011] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, arrangement and connection of the components, steps (processes), and order of steps shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0012] Furthermore, each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, the scales and the like do not necessarily match in each figure. In each figure, the same reference numerals are used to denote substantially the same components, and redundant explanations will be omitted or simplified.

[0013] In this specification, the terms "above" and "below" do not refer to vertically above and below in absolute spatial recognition, but are used as terms defined by a relative positional relationship based on the stacking order in a stacked configuration. The terms "above" and "below" are used not only when two components are arranged with a gap between them and another component is present between them, but also when two components are arranged in contact with each other.

[0014] Furthermore, in this specification, terms indicating the relationship between elements, such as parallel and perpendicular, terms indicating the shape of elements, such as rectangular, flat, and stepped, as well as numerical ranges, are not expressions that only express a strict meaning, but are expressions that also include a substantially equivalent range, for example, a difference of about a few percent.

[0015] First Embodiment A semiconductor laser device according to a first embodiment and a method for manufacturing the same will be described.

[0016] [1-1. Overall Configuration of Semiconductor Laser Device] First, the overall configuration of a semiconductor laser device 10 according to this embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic plan view showing the overall configuration of the semiconductor laser device 10 according to this embodiment. FIG. 1 shows a plan view of the semiconductor laser device 10 in a plan view of the mounting surface 80a of the submount 80. FIG. 2 is a schematic cross-sectional view showing the overall configuration of the semiconductor laser device 10 according to this embodiment. FIG. 2 shows a cross section of the semiconductor laser device 10 taken along line II-II in FIG. 1. Each figure shows an X-axis, a Y-axis, and a Z-axis, which are orthogonal to each other. The X-axis, the Y-axis, and the Z-axis are in a right-handed Cartesian coordinate system. The Y-axis direction is parallel to the resonance direction (and emission direction) of the laser light L0 emitted by the semiconductor laser device 10. The Z-axis direction is perpendicular to the mounting surface 80a of the submount 80.

[0017] 1, a semiconductor laser device 10 according to the present embodiment is a device that emits laser light L0. As shown in FIGS. 1 and 2, the semiconductor laser device 10 includes a submount 80, a spacer 40, a semiconductor laser element 20, and a bonding member 60.

[0018] The submount 80 is a base having a mounting surface 80a, on which the semiconductor laser element 20 is mounted. In this embodiment, the submount 80 has a substrate 81 and a pad electrode 82.

[0019] The substrate 81 is a main component of the submount 80. The shape of the substrate 81 is, for example, a rectangular parallelepiped. The substrate 81 and pad electrodes 82 of the submount 80 also function as a heat sink for dissipating heat generated by the semiconductor laser element 20. Therefore, the material of the substrate 81 may be either a conductive material or an insulating material, but it is preferable that the substrate 81 be made of a material with high thermal conductivity. The thermal conductivity of the submount 80 is preferably, for example, 150 W / (m·K) or higher. For example, the substrate 81 of the submount 80 may be made of a ceramic such as aluminum nitride (AlN) or polycrystalline silicon carbide (SiC), a metal material such as Cu, or a single-crystal diamond or polycrystalline diamond.

[0020] The pad electrode 82 is an electrode disposed on the main surface of the substrate 81. In this embodiment, the pad electrode 82 is a conductive film. The pad electrode 82 may be a single-layer film or a multi-layer film made of, for example, Au, Ag, Cu, Pt, Pb, Ni, Cr, W, Mo, or Ti. The upper surface of the pad electrode 82 (the surface behind the surface of the pad electrode 82 that is bonded to the substrate 81) is the mounting surface 80a. The mounting surface 80a is, for example, a flat surface, but is not limited to this.

[0021] The semiconductor laser element 20 is an edge-emitting type laser element disposed above the spacer 40. The configuration of the semiconductor laser element 20 will be described using FIG. 3 in addition to FIGS. 1 and 2 . FIG. 3 is a schematic cross-sectional view showing the overall configuration of the semiconductor laser element 20 according to this embodiment. FIG. 3 shows a cross-section of the semiconductor laser element 20 at the same position as in FIG. 2 . As shown in FIG. 1 , the semiconductor laser element 20 has a front end face 20F and a rear end face 20R that form a resonator for laser light L0. As shown in FIG. 3 , the semiconductor laser element 20 also has a bonding surface 30 facing the submount 80, a substrate 22, and a semiconductor stack 20S. In this embodiment, the semiconductor laser element 20 further has an insulating film 26, a first electrode 21, and a second electrode 27. The semiconductor laser element 20 also has an optical waveguide formed between the front end face 20F and the rear end face 20R, through which the laser light L0 is guided.

[0022] The semiconductor laser element 20 has an elongated shape with the resonance direction (i.e., the optical axis direction of the laser light L0) as the longitudinal direction. As an example, the length of the semiconductor laser element 20 in the resonance direction is 1200 μm, but is not limited to this.

[0023] The semiconductor laser element 20 is mounted on the mounting surface 80a of the submount 80 via a spacer 40. Specifically, the semiconductor laser element 20 is electrically connected to a pad electrode 82 on the submount 80 via a bonding member 60. In this embodiment, the semiconductor laser element 20 is mounted on the submount 80 by junction-down mounting.

[0024] 1, the semiconductor laser element 20 is mounted so that the front end face 20F protrudes beyond the edge of the mounting surface 80a. That is, in a plan view of the mounting surface 80a, the semiconductor laser element 20 protrudes from the mounting surface 80a, and the front end face 20F is located closer to the light emission side of the semiconductor laser element 20 than the edge of the mounting surface 80a of the submount 80. The protrusion amount of the semiconductor laser element 20 (i.e., the distance from the edge of the mounting surface 80a of the submount 80 to the front end face 20F of the semiconductor laser element 20) is, for example, not limited to, 5 μm or more and 20 μm or less. In this embodiment, the protrusion amount of the semiconductor laser element 20 is 10 μm.

[0025] As shown in FIG. 3 , the semiconductor stack 20S is a stack disposed between the substrate 22 and the junction surface 30. The semiconductor stack 20S includes a first semiconductor layer 23, an active layer 24, and a second semiconductor layer 25 disposed above the substrate 22. The first semiconductor layer 23 is a semiconductor layer of a first conductivity type. In this embodiment, the first conductivity type is n-type. The first semiconductor layer 23 includes, for example, an n-type cladding layer. The active layer 24 is a light-emitting layer that generates light. The second semiconductor layer 25 is a semiconductor layer of a second conductivity type different from the first conductivity type. In this embodiment, the second conductivity type is p-type. The second semiconductor layer 25 includes, for example, a p-type cladding layer and a p-type contact layer. A ridge 25R extending in the resonance direction of the laser light L0 is formed in the second semiconductor layer 25. In other words, the semiconductor stack 20S has the ridge 25R extending in the resonance direction of the laser light L0. The ridge 25R is a portion that protrudes away from the substrate 22 and extends in the resonance direction. The ridge 25R is formed with the same width (width in the X-axis direction perpendicular to the resonance direction) over the entire length between the front end face 20F and the rear end face 20R. The ridge 25R corresponds to an optical waveguide that guides the laser light L0.

[0026] The insulating film 26 is a member disposed above the semiconductor stack 20S. In this embodiment, the insulating film 26 electrically insulates the semiconductor stack 20S from a portion of the second electrode 27 excluding a region facing the opening 26a. The insulating film 26 has an opening 26a formed in a position facing a region including the central portion of the ridge 25R. The opening 26a extends along the upper surface of the ridge 25R. The opening 26a may or may not be surrounded by the insulating film 26 in a top view of the semiconductor stack 20S. For example, the opening 26a may be a slit dividing the insulating film 26.

[0027] The insulating film 26 covers the region of the upper surface of the semiconductor laminate 20S except for the opening 26a. That is, the insulating film 26 covers the region of the upper surface of the semiconductor laminate 20S except for the ridge 25R, the side surface of the ridge 25R, and the edge portion of the upper surface of the ridge 25R. The insulating film 26 is made of, for example, SiO ２ It is made up of insulating materials such as:

[0028] The first electrode 21 is an electrode disposed on the substrate 22. The first electrode 21 is disposed on the main surface of the substrate 22, which is on the back side of the main surface on which the semiconductor laminate 20S is laminated. In the present embodiment, the first electrode 21 has an adhesion layer 21a and a pad electrode 21b. The adhesion layer 21a is a conductive layer disposed on the substrate 22. In the present embodiment, the adhesion layer 21a is made of a conductive material such as Ti that has good adhesion to the substrate 22. The pad electrode 21b is a conductive layer disposed on the adhesion layer 21a. In the present embodiment, the pad electrode 21b is made of a metal material such as Au.

[0029] The second electrode 27 is an electrode disposed above the semiconductor laminate 20S. In the present embodiment, the second electrode 27 contacts the semiconductor laminate 20S at the opening 26a in the insulating film 26. A current is injected from the second electrode 27 into a region of the upper surface of the ridge 25R of the semiconductor laminate 20S that contacts the second electrode 27. The second electrode 27 has a contact electrode 27a, an adhesion layer 27b, and a pad electrode 27c.

[0030] The contact electrode 27a is a conductive layer in contact with the semiconductor laminate 20S. In this embodiment, the contact electrode 27a is disposed in the opening 26a of the insulating film 26. The contact electrode 27a is made of, for example, Ag or Pd.

[0031] The adhesion layer 27b is a conductive layer disposed above the contact electrode 27a. In the present embodiment, the adhesion layer 27b is disposed above the contact electrode 27a and the insulating film 26, and is in contact with the contact electrode 27a and the insulating film 26. The adhesion layer 27b may be made of a material that has good adhesion to the insulating film 26. The adhesion layer 27b is made of, for example, Ti.

[0032] The pad electrode 27c is a conductive layer disposed above the adhesive layer 27b. In this embodiment, the pad electrode 27c is in contact with the adhesive layer 27b. The pad electrode 27c is made of, for example, Au.

[0033] The bonding surface 30 is a surface of the second electrode 27 that faces the submount 80. The bonding surface 30 has a first region 31 and a second region 32. The first region 31 is a region that faces the ridge 25R. The first region 31 includes a region of the semiconductor stack 20S that faces a region into which current is injected from the bonding surface 30, and extends in the resonance direction of the laser light L0. In this embodiment, the first region 31 is a region of the bonding surface 30 that covers the top and side surfaces of the ridge 25R. The first region 31 protrudes from the second region 32 toward the submount 80. In this embodiment, the first region 31 protrudes from the second region 32 by a height H0. The second region 32 is a region of the bonding surface 30 that is arranged along the first region 31. In this embodiment, the second region 32 is a flat region of the bonding surface 30 other than the first region 31. The second region 32 has a third region 33 and a fourth region 34. The first region 31 is disposed between the third region 33 and the fourth region 34 .

[0034] As shown in FIGS. 1 and 2, the spacer 40 is a member disposed on the mounting surface 80a of the submount 80. The semiconductor laser element 20 is disposed above the spacer 40. The spacer 40 according to this embodiment will be described with reference to FIG. 4 in addition to FIGS. 1 and 2. FIG. 4 is a schematic plan view showing the configuration of the spacer 40 according to this embodiment. FIG. 4 shows a plan view of the spacer 40 in a plan view of the mounting surface 80a. FIG. 4 also shows the submount 80 and the bonding member 60.

[0035] 2 , the spacer 40 is disposed at a position on the bonding surface 30 of the semiconductor laser element 20 facing the second region 32. By disposing the spacer 40 at a position facing the second region 32 of the semiconductor laser element 20 in this manner, the semiconductor laser element 20 is disposed while being pressed against the spacer 40, thereby improving the accuracy of the mounting position of the semiconductor laser element 20 on the submount 80 and reducing the tilt of the semiconductor laser element 20 with respect to the submount 80. Furthermore, by disposing the spacer 40 at a position facing the second region 32 of the semiconductor laser element 20, interference between the spacer 40 and the first region 31 can be reduced, thereby reducing adverse effects of the spacer 40 on the laser light L0 of the semiconductor laser element 20.

[0036] In this embodiment, the spacer 40 includes a first spacer 41 facing the third region 33 of the bonding surface 30 and a second spacer 42 facing the fourth region 34. As shown in FIG. 4 , each of the first spacer 41 and the second spacer 42 is a plate-like member having a constant thickness (dimension in the Z-axis direction) extending in the resonance direction of the laser light L0. The first spacer 41 and the second spacer 42 are arranged in the X-axis direction with a gap W1 between them. In this manner, by using the first spacer 41 and the second spacer 42 facing the third region 33 and the fourth region 34, respectively, the mounting position accuracy of the semiconductor laser element 20 can be more reliably improved. Furthermore, the tilt of the semiconductor laser element 20 with respect to the submount 80 can be more reliably reduced.

[0037] The distance between the semiconductor laser element 20 and the first spacer 41 and the second spacer 42 may be 0.1 μm or less. In other words, the distance between the second region 32 of the bonding surface 30 of the semiconductor laser element 20 and the spacer 40 may be 0.1 μm or less. This makes it possible to improve the accuracy of the mounting position of the semiconductor laser element 20 relative to the spacer 40 and the submount 80. Also, it is possible to reduce the tilt of the semiconductor laser element 20 relative to the spacer 40 and the submount 80. More specifically, it is possible to reduce the tilt of the semiconductor laser element 20 in the rotation direction around the optical axis of the laser light L0.

[0038] Furthermore, since the semiconductor laser element 20 and the spacer 40 are close to each other, heat can be dissipated from the semiconductor laser element 20 via the spacer 40. Furthermore, by narrowing the gap between the semiconductor laser element 20 and the first spacer 41 and the second spacer 42, it is possible to prevent the bonding member 60 from flowing out to the side surface located at the end in the X-axis direction of the semiconductor laser element 20, and therefore it is possible to prevent the bonding member 60 from causing a short circuit between the layers of the semiconductor laminate 20S.

[0039] The height Hs of the upper surface of the spacer 40 (i.e., the surface facing the semiconductor laser element 20) from the mounting surface 80a may be 2 μm or more larger than the height from the second region 32 to the first region 31 (i.e., the height from the second region 32 to the highest position in the first region 31). This makes it possible to prevent interference between the first region 31 and the mounting surface 80a.

[0040] 2 , in a cross section perpendicular to the resonance direction, the distance W1 between the first spacer 41 and the second spacer 42 may be 60% or more of the width W0 of the semiconductor laser element 20. This increases the area of ​​the bonding region 60r between the bonding surface 30 of the semiconductor laser element 20 and the bonding member 60, thereby enabling efficient heat dissipation from the semiconductor laser element 20 via the bonding member 60.

[0041] 1, the spacer 40 may be present outside the semiconductor laser element 20 in the direction perpendicular to the resonance direction in a plan view of the mounting surface 80a. This makes it possible to suppress tilt of the semiconductor laser element 20 with respect to the submount 80.

[0042] Furthermore, the semiconductor laser element 20 may be in contact with the spacer 40. The thermal conductivity of the spacer 40 may be 50 W / (m·K) or more. This can improve the heat dissipation characteristics of the heat dissipation path that passes through the spacer 40.

[0043] The spacer 40 may be made of a metal material such as Au or Cu, or a non-metal material such as diamond-like carbon (DLC). The spacer 40 may be bonded to the mounting surface 80a or may be formed by vapor deposition on the mounting surface 80a. The spacer 40 may be formed integrally with the submount 80. For example, the integrated submount 80 and spacer 40 may be formed by cutting the base material for forming the submount 80.

[0044] The joining member 60 is a conductive member made of a porous metal material that is disposed between the mounting surface 80 a of the submount 80 and the semiconductor laser element 20 and joins the mounting surface 80 a and the semiconductor laser element 20 .

[0045] The joining member 60 is made of a porous metal material having voids (air gaps) with dimensions of approximately 1 μm or less. In this embodiment, the joining member 60 is composed almost entirely of metal particles. In other words, the joining member 60 is an aggregate of metal particles sintered while partially maintaining their particulate shape. Gaps between the sintered metal particles while partially maintaining their particulate shape form voids within the joining member 60. These voids form the porous joining member 60. These voids are also referred to as nanovoids in this specification. The joining member 60 is formed, for example, by heating a metal paste containing metal particles with an average particle size of 1 μm or less (hereinafter simply referred to as particle size) and a solvent at a relatively low temperature of approximately 200° C. The particle size of the metal particles may be, for example, 10 nm to 500 nm. In this case, the dimensions of the voids in the joining member 60 are also 10 nm to 500 nm. This allows the metal particles to be sintered and bonded together. A detailed method for forming the joining member 60 will be described later. The bonding member 60 is, for example, a sintered body of particles made of at least one material selected from Au, Ag, and Cu. Such a bonding member 60 can have a thermal conductivity of, for example, 50 W / (m·K) or more. This allows the heat generated in the semiconductor laser element 20 to be efficiently conducted to the submount 80 via the bonding member 60. The thermal conductivity of the bonding member 60 may also be equal to or greater than the thermal conductivity of the submount 80. This allows the heat generated in the semiconductor laser element 20 to be conducted to the submount 80 more efficiently via the bonding member 60.

[0046] Furthermore, the bonding member 60 made of a porous metal material has high elasticity, and therefore can alleviate thermal distortion after the semiconductor laser element 20 is mounted on the submount 80 .

[0047] 2 , in the present embodiment, the bonding member 60 is disposed between the first spacer 41 and the second spacer 42. The bonding member 60 is bonded to the first region 31. This allows current to be injected into the first region 31 via the bonding member 60.

[0048] As shown in FIG. 1 , in a plan view of the mounting surface 80a, the bonding member 60 is not present outside the semiconductor laser element 20 in a direction perpendicular to the resonance direction (i.e., the X-axis direction). Also, as shown in FIG. 2 , in a cross section perpendicular to the resonance direction, the bonding member 60 is not present outside the semiconductor laser element 20 in a direction perpendicular to the stacking direction of the semiconductor stack 20S (i.e., the X-axis direction). This allows the bonding member 60 to be attached to the side surface of the semiconductor laser element 20 located at the end in the X-axis direction, thereby preventing short circuits between the layers of the semiconductor stack 20S. As shown in FIG. 1 , in a plan view of the mounting surface 80a, the bonding member 60 may be present outside the semiconductor laser element 20 in the resonance direction (i.e., the Y-axis direction). In this embodiment, in a plan view of the mounting surface 80a, the bonding member 60 is present outside the rear end face 20R of the semiconductor laser element 20 in the resonance direction.

[0049] As shown in FIGS. 1 and 2, the joining member 60 does not have to be present outside the spacer 40 in the direction perpendicular to the resonance direction.

[0050] 1 , in a plan view of the mounting surface 80a, the area of ​​a bonding region 60r between the bonding surface 30 of the semiconductor laser element 20 and the bonding member 60 may be 50% or more of the area of ​​the semiconductor laser element 20 (i.e., the area of ​​the semiconductor laser element 20 in a plan view of the mounting surface 80a). In this way, by increasing the ratio of the area of ​​the bonding region 60r to the area of ​​the semiconductor laser element 20, the bonding strength between the semiconductor laser element 20 and the bonding member 60 can be increased.

[0051] [1-2. Manufacturing Method of Semiconductor Laser Device] A manufacturing method of the semiconductor laser device 10 according to this embodiment will be described with reference to FIGS. 5 to 12. FIGS. 5, 7, and 9 to 12 are schematic cross-sectional views showing each step of the manufacturing method of the semiconductor laser device 10 according to this embodiment. FIGS. 5, 7, and 9 to 12 show cross sections of the submount 80 and other components at the same positions as in FIG. 2. FIGS. 6 and 8 are schematic plan views showing each step of the manufacturing method of the semiconductor laser device 10 according to this embodiment. FIGS. 6 and 8 show plan views of the submount 80 and other components in a plan view of the mounting surface 80a of the submount 80.

[0052] 5, first, a submount 80 having a mounting surface 80a is prepared (submount preparation step). In this embodiment, the submount 80 is formed by depositing pad electrodes 82 on the main surface of a substrate 81.

[0053] 6 and 7 , spacers 40 are placed on the mounting surface 80a of the submount 80 (spacer placement process). In this embodiment, the spacers 40 include a first spacer 41 and a second spacer 42. The first spacer 41 and the second spacer 42 are each a plate-like member with a constant thickness that extends in the Y-axis direction. The first spacer 41 and the second spacer 42 are arranged in the X-axis direction with a gap W1 between them. The spacers 40 may be plate-like members placed on the mounting surface 80a, or may be formed on the mounting surface 80a by vapor deposition or the like.

[0054] 8 and 9, a metal paste 60p containing metal particles is placed in an area of ​​the mounting surface 80a different from the area where the spacers 40 are placed (paste placement process). The metal paste 60p is a paste containing metal particles, a solvent, and a surfactant. The particle size of the metal particles is 1 μm or less. The metal paste 60p contains particles made of at least one material selected from Au, Ag, and Cu, for example. In this embodiment, the metal particles are made of Au. The solvent contained in the metal paste 60p is, for example, an ester alcohol (2,2,4-trimethyl-3-hydroxypentaisobutyrate:C １２ H ２４ O３ ), terpineol, pine oil, butyl carbitol acetate, butyl carbitol, carbitol, and other organic solvents. The surfactants are, for example, alkylamines (CH ３ (CH ２ ) ｎ NH ２ ), alkylamine carboxylate, carboxylic acid amide, ester amine, organic titanium compound, sodium sulfocarboxylate, etc. Such metal paste 60p can be applied onto the mounting surface 80a by, for example, a dispenser method.

[0055] In this embodiment, a metal paste 60p having a width W2 extending in the Y-axis direction (dimension in the X-axis direction) is disposed between the first spacer 41 and the second spacer 42. Here, the width W2 is equal to or less than the distance W1 between the first spacer 41 and the second spacer 42. As shown in Fig. 9, the height of the metal paste 60p (dimension in the Z-axis direction) may be greater than the height of the spacer 40. This ensures that the bonding surface 30 of the semiconductor laser element 20 and the metal paste 60p are in reliable contact with each other in the pressing step described below.

[0056] 10 , the first region 31 of the semiconductor laser element 20 is placed facing the metal paste 60p, and the second region 32 (the third region 33 and the fourth region 34) is placed facing the spacer 40, and the first region 31 is pressed against the metal paste 60p (pressing step). In this embodiment, in the pressing step, the first region 31 is pressed against the metal paste 60p, and the third region 33 of the semiconductor laser element 20 is placed facing the first spacer 41, and the fourth region 34 is placed facing the second spacer 42. After the pressing step, as shown in FIG. 11 , the distance between the semiconductor laser element 20 and the first spacer 41 and the second spacer 42 may be 0.1 μm or less. Alternatively, the second region 32 of the semiconductor laser element 20 may be placed in contact with the spacer 40.

[0057] In the present embodiment, in the pressing step, the metal paste 60p is crushed and comes into contact with the first spacer 41 and the second spacer 42. In the present embodiment, the metal paste 60p is not disposed between the spacer 40 and the second region 32, but a portion of the metal paste 60p may be extruded between the spacer 40 and the second region 32 in the pressing step.

[0058] Next, as shown in FIG. 12 , the metal paste 60p is heated to form the bonding member 60 (see FIG. 2 , etc.) (heating process). In this embodiment, heating at a relatively low temperature of approximately 200°C evaporates the solvent and sinters the metal particles, fusing adjacent metal particles together. This results in the formation of a porous metal paste 60p in which almost only the metal particles remain. Because the particle size of the metal particles is 1 μm or less, the melting point of the metal is lowered due to a size effect, and heating at a relatively low temperature of approximately 200°C allows the metal particles to be sintered. The bonding member 60 made of such a porous metal material has high elasticity, thereby mitigating thermal strain after mounting the semiconductor laser element 20 on the submount 80. Furthermore, the load on the first region 31 bonded by the bonding member 60 can be reduced.

[0059] Through the steps described above, the semiconductor laser device 10 according to this embodiment can be manufactured.

[0060] As described above, in this embodiment, the spacer 40 is disposed at a position facing the second region 32 of the semiconductor laser element 20. By disposing the semiconductor laser element 20 by pressing it against the spacer 40 in this manner, the accuracy of the mounting position of the semiconductor laser element 20 on the submount 80 can be improved, and the tilt of the semiconductor laser element 20 with respect to the submount 80 can be reduced.

[0061] Furthermore, by setting the gap between the semiconductor laser element 20 and the first spacer 41 and the second spacer 42 to 0.1 μm or less after the pressing step, it is possible to improve the accuracy of the mounting position of the semiconductor laser element 20. It is also possible to reduce the tilt of the semiconductor laser element 20 with respect to the submount 80. More specifically, it is possible to reduce the tilt of the semiconductor laser element 20 in the rotation direction around the optical axis of the laser light L0.

[0062] Furthermore, in the manufacturing method for the semiconductor laser device 10 according to this embodiment, the height of the spacer 40 from the mounting surface 80a of the submount 80 may be 2 μm or more greater than the height of the first region 31 from the second region 32. This allows a sufficient amount of metal paste 60p to be applied in order to stabilize the amount of metal paste 60p applied. Therefore, it is possible to reduce a shortage of the bonding region 60r between the semiconductor laser element 20 and the bonding member 60, which would otherwise be caused by a shortage of metal paste 60p. It is also possible to prevent short circuits in the semiconductor laser element 20 from occurring due to the application of an excessive amount of metal paste 60p.

[0063] [1-3. Other Configuration Examples] Other configuration examples of the semiconductor laser device 10 according to this embodiment will be described.

[0064] Warpage may occur due to a difference in lattice constant between the substrate 22 of the semiconductor laser element 20 included in the semiconductor laser device 10 according to this embodiment and each semiconductor layer included in the semiconductor laminate 20S. Configuration examples of the semiconductor laser device 10 in the case where warpage occurs in the semiconductor laser device 10 will be described with reference to Figures 13 and 14. Figures 13 and 14 are schematic side views showing first and second configuration examples of the semiconductor laser device 10 according to this embodiment, respectively.

[0065] As shown in FIG. 13 , the semiconductor laser element 20 may be warped in a direction such that the bonding surface 30 is concave in a cross section parallel to the YZ plane. In this case, as shown in FIG. 13 , the distance between the bonding surface 30 and the spacer 40 varies depending on the position in the resonance direction. As shown in FIG. 13 , the distance between the bonding surface 30 and the spacer 40 at the end of the bonding surface 30 on the front end face 20F side and the end of the bonding surface 30 on the rear end face 20R side may be 0.1 μm or less. This reduces the tilt of the semiconductor laser element 20 in the direction that changes the tilt direction of the laser beam L0 (the direction indicated by the dashed arrow in the laser beam L0 portion in FIG. 13 ). Furthermore, the distance between the bonding surface 30 and the spacer 40 at the end of the bonding surface 30 on the rear end face 20R side may be zero. In other words, the bonding surface 30 and the spacer 40 may be in contact with each other at the end of the bonding surface 30 on the rear end face 20R side. This improves the heat dissipation characteristics from the semiconductor laser element 20 to the spacer 40.

[0066] 14, the semiconductor laser element 20 may be warped in a direction such that the bonding surface 30 is convex in a cross section parallel to the YZ plane. In this case, the distance between the bonding surface 30 and the spacer 40 at the center of the bonding surface 30 in the resonance direction may be 0.1 μm or less. Furthermore, the bonding surface 30 and the spacer 40 may be in contact with each other. This reduces the tilt of the semiconductor laser element 20 in the direction that changes the tilt direction of the laser light L0. Furthermore, the heat dissipation characteristics from the semiconductor laser element 20 to the spacer 40 can be improved.

[0067] Furthermore, voids may be formed between the bonding member 60 and the spacer 40 or the like. A configuration example of the semiconductor laser device 10 having such voids will be described with reference to Fig. 15. Fig. 15 is a schematic cross-sectional view showing a third configuration example of the semiconductor laser device 10 according to this embodiment. Fig. 15 shows a cross-sectional view of the semiconductor laser device 10 at the same position as in Fig. 2.

[0068] 15 , the semiconductor laser device 10 may include a void 61 or void 62 surrounded by the bonding surface 30 or mounting surface 80a, the spacer 40, and the bonding member 60. The dimensions of the voids 61 and 62 are, for example, 1 μm or more. Such voids 61 and 62 are also referred to as bonding voids to distinguish them from the above-mentioned nanovoids. By including the voids 61 and 62 in the semiconductor laser device 10, the expansion of the bonding member 60 can be absorbed by the voids 61 and 62, thereby mitigating thermal distortion of the semiconductor laser device 10 after manufacturing.

[0069] (Embodiment 2) A semiconductor laser device according to embodiment 2 will be described. The semiconductor laser device according to this embodiment differs from the semiconductor laser device 10 according to embodiment 1 mainly in the configuration of the semiconductor laser element. The semiconductor laser device according to this embodiment will be described below with reference to FIGS. 16 and 17, focusing on the differences from the semiconductor laser device 10 according to embodiment 1. FIG. 16 is a schematic cross-sectional view showing the configuration of a semiconductor laser device 110 according to this embodiment. FIG. 17 is a schematic cross-sectional view showing the configuration of a semiconductor laser element 120 according to this embodiment. FIGS. 16 and 17 show cross sections of the semiconductor laser element 120 and the like taken at the same position as the cross section shown in FIG. 2.

[0070] As shown in FIG. 16, a semiconductor laser device 110 according to this embodiment includes a submount 80, a spacer 40, a semiconductor laser element 120, and a bonding member 60.

[0071] As shown in FIG. 17 , the semiconductor laser element 120 according to this embodiment has a bonding surface 130 facing the submount 80, a substrate 22, a semiconductor laminate 120S, an insulating film 26, a first electrode 21, and a second electrode 27.

[0072] The semiconductor stack 120S according to this embodiment has a first semiconductor layer 23, an active layer 24, and a second semiconductor layer 125. The second semiconductor layer 125 according to this embodiment has a ridge 125R extending in the resonance direction of the laser light and two protrusions 125P formed therein. In other words, the semiconductor stack 120S has the ridge 125R extending in the resonance direction of the laser light and the two protrusions 125P. The ridge 125R and the two protrusions 125P are portions that protrude in a direction away from the substrate 22 and extend in the resonance direction. The ridge 125R is disposed between the two protrusions 125P. A groove-shaped recess is formed between the ridge 125R and the two protrusions 125P. The protrusion heights of the ridge 125R and the two protrusions 125P are equal. Although the two protrusions 125P also have a ridge-like structure similar to the ridge 125R, in this specification only the ridge-like structure that functions as a waveguide for laser light is referred to as the ridge.

[0073] The insulating film 26 according to this embodiment covers the region of the upper surface of the semiconductor stack 120S except for the opening 26a. That is, the insulating film 26 covers the region of the upper surface of the semiconductor stack 120S except for the ridge 125R, the side surface of the ridge 125R, and the edge portion of the upper surface of the ridge 125R.

[0074] The bonding surface 130 has a first region 131 and a second region 132. The first region 131 is a region facing the ridge 125R. The first region 131 includes a region of the semiconductor stack 120S facing a region into which current is injected from the bonding surface 130, and extends in the resonance direction of the laser light. In the present embodiment, the first region 131 is a region of the bonding surface 130 that covers the top surface and side surfaces of the ridge 125R.

[0075] The non-ridge implantation region has a third region 133 and a fourth region 134. The first region 131 is disposed between the third region 133 and the fourth region 134. The third region 133 has a non-protruding portion 133b and a protruding portion 133p that protrudes from the non-protruding portion 133b toward the submount 80. The fourth region 134 has a non-protruding portion 134b and a protruding portion 134p that protrudes from the non-protruding portion 134b toward the submount 80. Thus, the second region 132 has the non-protruding portions 133b and 134b and the protruding portions 133p and 134p that protrude from the non-protruding portions 133b and 134b toward the submount 80.

[0076] The first region 131 protrudes from the non-protruding portions 133b and 134b of the second region 132 toward the submount 80. The height from the non-protruding portions 133b and 134b to the protruding portions 133p and 134p is equal to the height from the non-protruding portions 133b and 134b to the first region 131 (see height H1 in FIG. 17 ).

[0077] 16 , the spacer 40 is disposed at a position on the bonding surface 130 of the semiconductor laser element 120 facing the third region 133 and the fourth region 134. The spacer 40 has a first spacer 41 facing the third region 133 of the bonding surface 130 and a second spacer 42 facing the fourth region 134.

[0078] In this embodiment, similarly to the first embodiment, the joining member 60 is joined to the first region 131 .

[0079] In the semiconductor laser device 110 according to the present embodiment, similarly to the semiconductor laser device 10 according to the first embodiment, the spacer 40 can improve the accuracy of the mounting position of the semiconductor laser element 120 on the submount 80. In addition, the tilt of the semiconductor laser element 120 with respect to the submount 80 can be reduced.

[0080] In this embodiment, since the mounting surface of the semiconductor laser element 120 has the protrusions 133p and 134p, the distance of the first region 131 from the mounting surface 80a is approximately the height of the spacer 40 from the mounting surface 80a. Therefore, in this embodiment, the height of the spacer 40 from the mounting surface 80a may be 2 μm or more. This prevents interference between the first region 131 of the semiconductor laser element 120 and the mounting surface 80a. Furthermore, in manufacturing the semiconductor laser device 110, a sufficient amount of metal paste 60p can be applied to stabilize the amount of metal paste 60p applied. Therefore, it is possible to reduce a shortage of the bonding region 60r between the semiconductor laser element 120 and the bonding member 60 due to a shortage of metal paste 60p. Furthermore, it is possible to prevent a short circuit in the semiconductor laser element 120 due to an excessive application of metal paste 60p.

[0081] (Embodiment 3) A semiconductor laser device according to embodiment 3 will be described. The semiconductor laser device according to this embodiment differs from the semiconductor laser device 10 according to embodiment 1 mainly in the configuration of the semiconductor laser element. The semiconductor laser device according to this embodiment will be described below with reference to FIGS. 18 and 19, focusing on the differences from the semiconductor laser device 10 according to embodiment 1. FIG. 18 is a schematic cross-sectional view showing the configuration of a semiconductor laser device 210 according to this embodiment. FIG. 19 is a schematic cross-sectional view showing the configuration of a semiconductor laser element 220 according to this embodiment. FIGS. 18 and 19 show cross sections of the semiconductor laser element 220 and the like taken at the same position as the cross section shown in FIG. 2.

[0082] As shown in FIG. 18, a semiconductor laser device 210 according to this embodiment includes a submount 80, a spacer 40, a semiconductor laser element 220, and a bonding member 60.

[0083] As shown in FIG. 19 , the semiconductor laser element 220 according to this embodiment has a bonding surface 230 facing the submount 80, a substrate 22, a semiconductor laminate 220S, an insulating film 26, a first electrode 21, and a second electrode 27.

[0084] The semiconductor stack 220S according to this embodiment has a first semiconductor layer 23, an active layer 24, and a second semiconductor layer 225. The second semiconductor layer 225 according to this embodiment has a ridge 225R formed therein, extending in the resonance direction of the laser light. In other words, the semiconductor stack 220S has the ridge 225R extending in the resonance direction of the laser light. The ridge 225R is a portion that protrudes away from the substrate 22 and extends in the resonance direction. The ridge 225R is disposed at a position offset from the center of the semiconductor laser element 220 in the X-axis direction. In FIG. 19 , the ridge 225R is disposed at a position offset to the left from the center of the semiconductor laser element 220 in the X-axis direction.

[0085] The insulating film 26 according to this embodiment covers the region of the upper surface of the semiconductor stack 220S except for the opening 26a. That is, the insulating film 26 covers the region of the upper surface of the semiconductor stack 220S except for the ridge 225R, the side surface of the ridge 225R, and the edge portion of the upper surface of the ridge 225R.

[0086] The bonding surface 230 has a first region 231 and a second region 232. The first region 231 is a region facing the ridge 225R. The first region 231 includes a region of the semiconductor stack 220S facing a region into which current is injected from the bonding surface 230, and extends in the resonance direction of the laser light. In the present embodiment, the first region 231 is a region of the bonding surface 230 that covers the top and side surfaces of the ridge 225R. The second region 232 is a flat region of the bonding surface 230 other than the first region 231. The second region 232 has a third region 233 and a fourth region 234. The first region 231 is disposed between the third region 233 and the fourth region 234.

[0087] The first region 231 protrudes from the third region 233 and the fourth region 234. The third region 233 and the fourth region 234 are each a region of the bonding surface 230 that is disposed along the first region 231.

[0088] In this embodiment, the first region 231 is disposed at a position offset in the X-axis direction from the center of the semiconductor laser element 220. In Fig. 19 , the first region 231 is disposed at a position offset to the left from the center in the X-axis direction of the semiconductor laser element 220. As shown in Fig. 18 , in this embodiment as well, the bonding member 60 is bonded to the first region 231, as in the first embodiment.

[0089] 18 , the spacer 40 is disposed at a position on the bonding surface 230 of the semiconductor laser element 220 facing the third region 233 and the fourth region 234. The spacer 40 has a first spacer 41 facing the third region 233 of the bonding surface 230 and a second spacer 42 facing the fourth region 234.

[0090] The semiconductor laser device 210 including the semiconductor laser element 220 of this embodiment also achieves the same effects as those of the first embodiment.

[0091] (Fourth Embodiment) A semiconductor laser device according to a fourth embodiment will be described. The semiconductor laser device according to this embodiment differs from the semiconductor laser device 210 according to the third embodiment mainly in the configuration of the spacer. The semiconductor laser device according to this embodiment will be described below with reference to FIG. 20, focusing on the differences from the semiconductor laser device 210 according to the third embodiment. FIG. 20 is a schematic cross-sectional view showing the configuration of a semiconductor laser device 310 according to this embodiment. FIG. 20 shows a cross-section of a semiconductor laser element 220 and the like taken at the same position as the cross-section shown in FIG.

[0092] As shown in FIG. 20, a semiconductor laser device 310 according to this embodiment includes a submount 80 , a spacer 340 , a semiconductor laser element 220 , and a bonding member 60 .

[0093] The spacer 340 according to this embodiment has only one plate-like member extending in the resonance direction (i.e., the Y-axis direction). The spacer 340 is disposed on the bonding surface 230 of the semiconductor laser element 220 at a position facing the third region 233, but is not disposed at a position facing the fourth region 234.

[0094] In the semiconductor laser device 310 according to the present embodiment, similarly to the semiconductor laser device 10 according to the first embodiment, the spacer 340 can improve the accuracy of the mounting position of the semiconductor laser element 220 on the submount 80. In addition, the tilt of the semiconductor laser element 220 with respect to the submount 80 can be reduced.

[0095] Furthermore, in this embodiment, the spacer 340 has only a plate-like member extending in one resonance direction, so that the structure of the spacer 340 can be simplified.

[0096] In the present embodiment, similarly to the first embodiment, the bonding member 60 may not be present outside the semiconductor laser element 220 in the X-axis direction in a cross section perpendicular to the resonance direction. That is, in a plan view of the mounting surface 80a, the bonding member 60 may not be present outside the semiconductor laser element 220 in the X-axis direction. In this way, by attaching the bonding member 60 to the side surface located at the end in the X-axis direction of the semiconductor laser element 220, it is possible to prevent short circuits between the layers of the semiconductor stack 220S.

[0097] Fifth Embodiment A semiconductor laser device according to a fifth embodiment will be described. The semiconductor laser device according to this embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the spacer. The semiconductor laser device according to this embodiment will be described below with reference to FIG. 21 , focusing on the differences from the semiconductor laser device 10 according to the first embodiment. FIG. 21 is a schematic plan view showing the configuration of a semiconductor laser device 410 according to this embodiment. FIG. 21 shows a plan view of the semiconductor laser device 410 in a plan view of the mounting surface 80 a of the submount 80. In addition, in FIG. 21 , in order to explain the configuration of the spacer 440, a plan view of the semiconductor laser device 410 from which the semiconductor laser element 20 has been removed is shown, and only the outline of the semiconductor laser element 20 is indicated by a dashed line.

[0098] As shown in FIG. 21, a semiconductor laser device 410 according to this embodiment includes a submount 80, a spacer 440, a semiconductor laser element 20, and a bonding member 60.

[0099] The spacer 440 according to the present embodiment has grooves 441t, 442t arranged on surfaces 441s, 442s facing the bonding member 60. More specifically, the spacer 440 has a first spacer 441 and a second spacer 442. The first spacer 441 has a groove 441t arranged on its surface 441s facing the bonding member 60. The second spacer 442 has a groove 442t arranged on its surface 442s facing the bonding member 60. In the present embodiment, the grooves 441t and 442t are concave portions extending in a direction perpendicular to the mounting surface 80a (i.e., the Z-axis direction), and extend from one end to the other end of the first spacer 441 and the second spacer 442 in the direction perpendicular to the mounting surface 80a. In the present embodiment, the first spacer 441 has a plurality of grooves 441t, and the second spacer 442 has a plurality of grooves 442t.

[0100] The semiconductor laser device 410 according to this embodiment also provides the same effects as those of the semiconductor laser device 10 according to the first embodiment.

[0101] Furthermore, in this embodiment, the grooves 441t and 442t in the spacer 440 can increase the contact area between the spacer 440 and the bonding member 60. Therefore, the bonding strength between the spacer 440 and the bonding member 60 can be increased.

[0102] 21, the grooves 441t, 442t have a rectangular shape in a plan view of the mounting surface 80a, but the shape of the grooves 441t, 442t is not limited to this. For example, the grooves 441t, 442t may have a semicircular shape in a plan view of the mounting surface 80a.

[0103] In the example shown in FIG. 21, the grooves 441t and 442t extend in a direction perpendicular to the mounting surface 80a, but they may also extend in a direction parallel to the mounting surface 80a.

[0104] Furthermore, the structure of the spacer 440 does not have to be the above structure as long as it is a structure that can increase the contact area between the spacer 440 and the joining member 60. For example, the spacer 440 may have one or more dimple-shaped recesses or one or more protrusions on the surfaces 441s, 442s facing the joining member 60.

[0105] Sixth Embodiment A semiconductor laser device according to the sixth embodiment will be described. The semiconductor laser device according to the sixth embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the spacer. The semiconductor laser device according to the sixth embodiment will be described below with reference to FIG. 22, focusing on the differences from the semiconductor laser device 10 according to the first embodiment. FIG. 22 is a schematic cross-sectional view showing the configuration of a semiconductor laser device 510 according to the sixth embodiment. FIG. 22 shows a cross-section of the semiconductor laser device 510 at the same position as the cross-section shown in FIG.

[0106] As shown in FIG. 22, a semiconductor laser device 510 according to this embodiment includes a submount 80, a spacer 540, a semiconductor laser element 20, and a bonding member 60.

[0107] The spacer 540 according to this embodiment has a first spacer 541 facing the third region 33 of the semiconductor laser element 20 and a second spacer 542 facing the fourth region 34. In this embodiment, the distance W1 between the first spacer 541 and the second spacer 542 is smallest at a position closest to the semiconductor laser element 20. Specifically, the distance W1 decreases as the distance approaches the semiconductor laser element 20. Here, the configuration in which the distance W1 decreases as the distance approaches the semiconductor laser element 20 includes not only a configuration in which the distance W1 decreases continuously but also a configuration in which the distance W1 decreases in a stepwise manner (i.e., in stages).

[0108] The semiconductor laser device 510 according to this embodiment also provides the same effects as those of the semiconductor laser device 10 according to the first embodiment.

[0109] Furthermore, the spacer 540 according to this embodiment exhibits the following effects. These effects will be described with reference to FIG. 23 . FIG. 23 is a schematic cross-sectional view showing a paste placement step in a manufacturing method for a semiconductor laser device 510 according to this embodiment. FIG. 23 shows a cross-section of the spacer 540 and other components at the same position as in FIG. 22 . As a result, the distance W1 between the first spacer 541 and the second spacer 542 is smallest when viewed from above on the mounting surface 80 a of the submount 80 . Therefore, even when the metal paste 60 p has a width W2 close to the distance W1 (i.e., the minimum value of the distance W1) when viewed from above on the mounting surface 80 a in the paste placement step, a space can be secured between the spacer 540 and the metal paste 60 p. Therefore, when the semiconductor laser element 20 is pressed against the metal paste 60 p in the pressing step, the metal paste 60 p can be reduced from spilling out between the spacer 540 and the bonding surface 30 of the semiconductor laser element 20 . Furthermore, when the metal paste 60p is pressed into contact with the spacer 540, a force is applied to the metal paste 60p at surfaces 541s, 542s of the spacer 540 that face the metal paste 60p, such that the force is reflected by the metal paste 60p. Here, each of the surfaces 541s, 542s of the spacer 540 that face the metal paste 60p is inclined in a direction that narrows the space between the surface and the mounting surface 80a, or has a step-like structure that prevents the metal paste 60p from moving toward the semiconductor laser element 20. Therefore, a force is applied to the metal paste 60p in a direction toward the mounting surface 80a. This makes it possible to prevent the metal paste 60p from moving away from the mounting surface 80a, thereby reducing the amount of the metal paste 60p that protrudes between the spacer 540 and the bonding surface 30 of the semiconductor laser element 20.

[0110] 22 , the use of the spacer 540 according to this embodiment makes it easier to form a void 62 (bonding void) surrounded by the mounting surface 80a, the spacer 540, and the bonding member 60. The provision of the void 62 in the semiconductor laser device 510 allows the void 62 to absorb the expansion of the bonding member 60, thereby mitigating thermal distortion of the semiconductor laser device 510 after manufacture.

[0111] The configuration of the spacer according to this embodiment is not limited to the examples shown in Fig. 22 and Fig. 23. Another example of the spacer according to this embodiment will be described with reference to Fig. 24. Fig. 24 is a schematic cross-sectional view showing the configuration of a semiconductor laser device 510a according to a modified example of this embodiment. Fig. 24 shows a cross-section of the semiconductor laser device 510a at the same position as the cross-section shown in Fig. 2.

[0112] As shown in FIG. 24, a semiconductor laser device 510 a according to this modification includes a submount 80 , a spacer 540 a , a semiconductor laser element 20 , and a bonding member 60 .

[0113] The spacer 540a has a first spacer 541a facing the third region 33 of the semiconductor laser element 20 and a second spacer 542a facing the fourth region 34. The distance W1 between the first spacer 541a and the second spacer 542a according to this embodiment becomes smaller as it approaches the semiconductor laser element 20. In this modification, the distance W1 becomes smaller in a step-like manner as it approaches the semiconductor laser element 20. In other words, a surface 541as of the first spacer 541a facing the bonding member 60 and a surface 542as of the second spacer 542a facing the bonding member 60 have a step-like shape.

[0114] In the semiconductor laser device 510a according to this modification, as in the semiconductor laser device 510, even when the metal paste 60p is arranged with a width close to the interval W1 in a plan view of the mounting surface 80a in the paste arrangement step, a space can be secured between the spacer 540a and the metal paste 60p. Therefore, when the semiconductor laser element 20 is pressed against the metal paste 60p in the pressing step, it is possible to reduce the amount of the metal paste 60p spilling out between the spacer 540a and the bonding surface 30 of the semiconductor laser element 20.

[0115] Seventh Embodiment A semiconductor laser device according to the seventh embodiment will be described. The semiconductor laser device according to the seventh embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the spacer. The semiconductor laser device according to the seventh embodiment will be described below with reference to FIG. 25 , focusing on the differences from the semiconductor laser device 10 according to the first embodiment. FIG. 25 is a schematic plan view showing the configuration of a semiconductor laser device 610 according to the present embodiment. FIG. 25 shows a plan view of the semiconductor laser device 610 in a plan view of the mounting surface 80 a of the submount 80. In addition, in FIG. 25 , in order to explain the configuration of the spacer 640, a plan view of the semiconductor laser device 610 from which the semiconductor laser element 20 has been removed is shown, and only the outline of the semiconductor laser element 20 is indicated by a dashed line.

[0116] As shown in FIG. 25, a semiconductor laser device 610 according to this embodiment includes a submount 80 , a spacer 640 , a semiconductor laser element 20 , and a bonding member 60 .

[0117] The spacer 640 according to this embodiment has a first spacer 641 facing the third region 33 of the semiconductor laser element 20 and a second spacer 642 facing the fourth region 34. In this embodiment, in a plan view of the mounting surface 80a, the distance W1 between the first spacer 641 and the second spacer 642 between the front end face 20F and the rear end face 20R is largest at a position closest to the rear end face 20R. Specifically, the distance W1 increases from a position corresponding to the front end face 20F to a position corresponding to the rear end face 20R. Here, the configuration in which the distance W1 increases from a position corresponding to the front end face 20F to a position corresponding to the rear end face 20R includes not only a configuration in which the distance W1 increases continuously but also a configuration in which the distance W1 decreases in a stepped manner (i.e., in stages).

[0118] The semiconductor laser device 610 according to this embodiment also provides the same effects as those of the semiconductor laser device 10 according to the first embodiment.

[0119] Furthermore, according to the spacer 640 of this embodiment, in the paste disposing step, by disposing the metal paste 60p with a width smaller than the minimum value of the distance W1 between the first spacer 641 and the second spacer 642, it is possible to ensure a space between the spacer 640 and the metal paste 60p in a region close to the rear end face 20R of the semiconductor laser element 20. Therefore, when the semiconductor laser element 20 is pressed against the metal paste 60p in the pressing step, it is possible to reduce the metal paste 60p from spilling out between the spacer 640 and the bonding surface 30 of the semiconductor laser element 20. Furthermore, when the metal paste 60p is pressed into contact with the spacer 640, a force that is reflected by the metal paste 60p is applied to the surfaces 641s, 642s of the spacer 640 that face the metal paste 60p. 25 , each of surfaces 641s, 642s of spacer 640 facing metal paste 60p is inclined or has a step-like structure that prevents metal paste 60p from moving toward front end face 20F, so that a force is applied to metal paste 60p in a direction from front end face 20F toward rear end face 20R of semiconductor laser element 20 (i.e., the negative direction in the Z-axis direction). As a result, metal paste 60p moves toward the region where interval W1 is relatively large, so that metal paste 60p preferentially protrudes outside rear end face 20R of semiconductor laser element 20, and protrusion between spacer 640 and bonding surface 30 of semiconductor laser element 20 can be reduced.

[0120] The configuration of the spacer 640 according to this embodiment is not limited to the example shown in Fig. 25. In the example shown in Fig. 25, the distance W1 between the first spacer 641 and the second spacer 642 increases continuously from the position corresponding to the front end face 20F toward the position corresponding to the rear end face 20R, but it may also increase in a stepwise manner.

[0121] Eighth Embodiment A semiconductor laser device according to the eighth embodiment will be described. The semiconductor laser device according to this embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the spacer. The semiconductor laser device according to this embodiment will be described below with reference to FIGS. 26 and 27 , focusing on the differences from the semiconductor laser device 10 according to the first embodiment. FIG. 26 is a schematic plan view showing the configuration of a semiconductor laser device 710 according to this embodiment. FIG. 26 shows a plan view of the semiconductor laser device 710 in a plan view of the mounting surface 80a of the submount 80. Furthermore, FIG. 26 also shows a plan view of the semiconductor laser device 710 with the semiconductor laser element 20 removed to explain the configuration of the spacer 740, with only the outline of the semiconductor laser element 20 indicated by a dashed line. FIG. 27 is a schematic cross-sectional view showing the configuration of the semiconductor laser device 710 according to this embodiment. FIG. 27 shows a cross section of the semiconductor laser device 710 taken along line XXVII-XXVII shown in FIG.

[0122] As shown in FIGS. 26 and 27, a semiconductor laser device 710 according to this embodiment includes a submount 80, a spacer 740, a semiconductor laser element 20, and a bonding member 60.

[0123] The spacer 740 according to this embodiment has a first spacer 741 facing the third region 33 of the semiconductor laser element 20 and a second spacer 742 facing the fourth region 34. In this embodiment, as shown in FIG. 26 , the spacer 740 has a third spacer 743 disposed between the first spacer 741 and the second spacer 742 at an end closer to the front end face 20F of the semiconductor laser element 20. In a plan view of the mounting surface 80a of the submount 80, the third spacer 743 is disposed between the front end face 20F and the rear end face 20R. In this embodiment, the third spacer 743 is disposed at the ends of the first spacer 741 and the second spacer 742 closer to the front end face 20F of the semiconductor laser element 20.

[0124] As shown in FIG. 27, in this embodiment, a recess 743c is formed on the surface of the third spacer 743 facing the semiconductor laser element 20 (the first region 31 thereof).

[0125] The width W3 of the third spacer 743 in the resonance direction (i.e., the Y-axis direction) may be 10% or less, 5% or less, or 1% or less of the dimension of the semiconductor laser element 20 in the resonance direction (i.e., the distance between the front end face 20F and the rear end face 20R).

[0126] The semiconductor laser device 710 according to this embodiment also provides the same effects as those of the semiconductor laser device 10 according to the first embodiment.

[0127] Furthermore, with the spacer 740 according to the present embodiment, the third spacer 743 can prevent the metal paste 60p from moving to the front end face 20F during the pressing step in the manufacturing method of the semiconductor laser device 710. Therefore, it is possible to prevent the bonding member 60, which is a sintered body of the metal paste 60p, from adhering to the front end face 20F and interfering with the emission of the laser light L0.

[0128] Furthermore, a recess 743c is formed on the surface of the third spacer 743 facing the semiconductor laser element 20. This reduces contact between the first region 31 of the semiconductor laser element 20 and the third spacer 743. The distance between the semiconductor laser element 20 and the recess 743c of the third spacer 743 may be greater than 0.1 μm or may be 0.5 μm or greater. This more reliably reduces contact between the first region 31 and the third spacer 743. The distance between the semiconductor laser element 20 and the recess 743c of the third spacer 743 may be 1 μm or less or 1.5 μm or less. This more reliably prevents the metal paste 60p from migrating to the front end facet 20F.

[0129] Ninth Embodiment A semiconductor laser device according to the ninth embodiment will be described. The semiconductor laser device according to the present embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the spacer. The semiconductor laser device according to the present embodiment will be described below with reference to FIGS. 28 and 29 , focusing on the differences from the semiconductor laser device 10 according to the first embodiment. FIG. 28 is a schematic plan view showing the configuration of a semiconductor laser device 810 according to the present embodiment. FIG. 28 shows a plan view of the semiconductor laser device 810 in a plan view of the mounting surface 80a of the submount 80. Furthermore, in FIG. 28 , in order to explain the configuration of the spacer 840, a plan view of the semiconductor laser device 810 is shown with the semiconductor laser element 20 removed, and only the outline of the semiconductor laser element 20 is indicated by a dashed line. FIG. 29 is a schematic cross-sectional view showing the configuration of the semiconductor laser device 810 according to the present embodiment. FIG. 29 shows a cross section of the semiconductor laser device 810 taken along line XXIX-XXIX shown in FIG.

[0130] As shown in FIGS. 28 and 29, a semiconductor laser device 810 according to this embodiment includes a submount 80, a spacer 840, a semiconductor laser element 20, and a bonding member 60.

[0131] The spacer 840 according to this embodiment has a first spacer 841 facing the third region 33 of the semiconductor laser element 20 and a second spacer 842 facing the fourth region 34. The semiconductor laser device 810 according to this embodiment has a through-hole 841h penetrating between a surface 841s of the spacer 840 facing the bonding member 60 and a surface 841r behind the surface 841s, and a through-hole 842h penetrating between a surface 842s of the spacer 840 facing the bonding member 60 and a surface 842r behind the surface 842s. In this embodiment, the through-holes 841h and 842h are formed in the surfaces of the spacer 840 facing the mounting surfaces 80a of the first spacer 841 and the second spacer 842. In other words, the through-holes 841h and 842h are adjacent to the mounting surface 80a. In other words, the through holes 841h and 842h are through holes surrounded by the submount 80 and a groove-shaped recess formed in the surface of the spacer 840 facing the mounting surface 80a. Here, the through holes may be located inside the spacer 840, or may be through holes surrounded by the spacer 840 and a groove formed in the submount 80. In this way, the semiconductor laser device 810 according to this embodiment may have a through hole that is surrounded by the submount 80 and the spacer 840 and passes through between a position corresponding to the surface of the spacer 840 facing the bonding member 60 and a position corresponding to the surface behind the surface.

[0132] The semiconductor laser device 810 according to this embodiment also provides the same effects as those of the semiconductor laser device 10 according to the first embodiment.

[0133] Furthermore, since the spacer 840 according to this embodiment has through holes 841h and 842h, the metal paste 60p can be introduced into the through holes 841h and 842h during the pressing step of the manufacturing method of the semiconductor laser device 810. This reduces the metal paste 60p from spilling out between the spacer 840 and the semiconductor laser element 20. Furthermore, during the heating step of the manufacturing method of the semiconductor laser device 810, the through holes 841h and 842h can serve as a path through which the solvent contained in the metal paste 60p evaporates from the space surrounded by the spacer 840, the submount 80, and the semiconductor laser element 20 to the space outside the semiconductor laser device 810. This reduces the amount of solvent remaining near the bonding members 60 after the heating step. This allows the sintered state of the bonding members 60 to be stabilized.

[0134] Moreover, in this embodiment, the through holes 841h, 842h are formed on the surfaces of the first spacer 841 and the second spacer 842 of the spacer 840 that face the mounting surface 80a. This maximizes the distance between the through holes 841h, 842h and the semiconductor laser element 20, thereby reducing short-circuiting between the semiconductor layers of the semiconductor laser element 20 due to the metal paste 60p (i.e., the bonding member 60).

[0135] The through holes 841h, 842h do not have to be formed on the surface facing the mounting surface 80a of the first spacer 841 and the second spacer 842 of the spacer 840. For example, the through holes 841h, 842h may be formed at positions where the distance between the through holes 841h, 842h and the bonding surface 30 of the semiconductor laser element 20 is greater than zero.

[0136] (Other Modifications) Although the semiconductor laser device and the manufacturing method thereof according to the present disclosure have been described above based on the embodiments, the present disclosure is not limited to the above-described embodiments.

[0137] For example, in the first embodiment and the like, the spacer has a rectangular parallelepiped shape, but the shape of the spacer is not limited to this. For example, the spacer may have an oval shape or the like when viewed from above the mounting surface 80 a.

[0138] Furthermore, in each of the above-described embodiments, the semiconductor laser element 20 protrudes from the end of the submount 80 in a planar view of the mounting surface 80 a of the submount 80, but the semiconductor laser element 20 does not have to protrude from the end of the submount 80.

[0139] In addition, this disclosure also includes forms obtained by applying various modifications that a person skilled in the art would conceive of to each embodiment and variant, and forms realized by arbitrarily combining the components and functions of each embodiment and variant within the scope that does not deviate from the intent of this disclosure.

[0140] For example, the same configuration as the spacer 440 according to the fifth embodiment may be applied to each of the spacers according to the second to fourth and sixth to eighth embodiments.

[0141] Furthermore, the third spacer 743 of the spacer 740 according to the eighth embodiment may be applied to each of the spacers according to the second to seventh and ninth embodiments.

[0142] The semiconductor laser device and manufacturing method thereof according to the present disclosure are useful as light sources and manufacturing methods for products in various fields, such as image display devices such as projectors, automotive parts such as in-vehicle headlamps, lighting fixtures such as spotlights, thermally assisted hard disk drives, or industrial equipment such as laser processing devices.

[0143] 10, 110, 210, 310, 410, 510, 510a, 610, 710, 810 Semiconductor laser device 20, 120, 220 Semiconductor laser element 20F Front end face 20R Rear end face 20S, 120S, 220S Semiconductor laminate 21 First electrode 21a, 27b Adhesion layer 21b, 27c, 82 Pad electrode 22, 81 Substrate 23 First semiconductor layer 24 Active layer 25, 125, 225 Second semiconductor layer 25R, 125R, 225R Ridge 26 Insulating film 26a Opening 27 Second electrode 27a Contact electrode 30, 130, 230 Bonding surface 31, 131, 231 First region 32, 132, 232 Second region 33, 133, 233 Third region 34, 134, 234 Fourth region 40, 340, 440, 540, 540a, 640, 740, 840 Spacer 41, 441, 541, 541a, 641, 741, 841 First spacer 42, 442, 542, 542a, 642, 742, 842 Second spacer 60 Bonding member 60p Metal paste 61, 62 Void 80 Submount 80a Mounting surface 125P Protruding portion 133b, 134b Non-protruding portion 133p, 134p Protruding portion 441s, 442s, 541s, 542s, 541as, 542as, 641s, 642s, 841r, 841s, 842r, 842s Surfaces 441t, 442t Grooves 743 Third spacer 743c Recessed portions 841h, 842h Through holes L0 Laser light

Claims

1. A semiconductor laser device that emits laser light, comprising: a submount having a mounting surface; a spacer arranged on the mounting surface; an edge-emitting semiconductor laser element arranged above the spacer; and a bonding member arranged between the mounting surface and the semiconductor laser element and made of a porous metal material that bonds the mounting surface to the semiconductor laser element, wherein the semiconductor laser element has front and rear end faces that form a resonator for the laser light, and a bonding surface facing the submount, a substrate, and a semiconductor laminate arranged between the substrate and the bonding surface, wherein the semiconductor laminate has a ridge extending in the resonance direction of the laser light, and the bonding surface has a first region facing the ridge and a second region arranged along the first region, the bonding member is bonded to the first region, and the spacer is arranged at a position facing the second region.

2. The semiconductor laser device according to claim 1, wherein the second region has a third region and a fourth region, the first region is disposed between the third region and the fourth region, the spacer has a first spacer facing the third region and a second spacer facing the fourth region, the joining member is disposed between the first spacer and the second spacer, and the distance between the semiconductor laser element and the first spacer and the second spacer is 0.1 μm or less.

3. The semiconductor laser device according to claim 2, wherein the distance between the first spacer and the second spacer in a cross section perpendicular to the resonance direction is 60% or more of the width of the semiconductor laser element.

4. The semiconductor laser device according to claim 2 or 3, wherein the distance between the first spacer and the second spacer is smallest at a position closest to the semiconductor laser element.

5. The semiconductor laser device according to claim 2 or 3, wherein, in a plan view of the mounting surface, the distance between the first spacer and the second spacer between the front end face and the rear end face is largest at a position closest to the rear end face.

6. The semiconductor laser device according to any one of claims 2 to 5, wherein the spacer has a third spacer arranged at an end closer to the front end face between the first spacer and the second spacer, and in a plan view of the mounting surface, the third spacer is arranged between the front end face and the rear end face.

7. The semiconductor laser device according to any one of claims 1 to 6, wherein the semiconductor laser element is in contact with the spacer.

8. The semiconductor laser device according to any one of claims 1 to 7, wherein, in a plan view of the mounting surface, the bonding member is not present outside the semiconductor laser element in a direction perpendicular to the resonance direction.

9. The semiconductor laser device according to any one of claims 1 to 8, wherein the thermal conductivity of the spacer is 50 W / (m·K) or more.

10. A semiconductor laser device according to any one of claims 1 to 9, wherein, in a plan view of the mounting surface, the area of ​​the bonding region between the bonding surface and the bonding member is 50% or more of the area of ​​the semiconductor laser element.

11. The semiconductor laser device according to any one of claims 1 to 10, wherein the distance between the bonding surface and the spacer is 0.1 μm or less at the edge of the bonding surface on the front end face side and the edge of the bonding surface on the rear end face side.

12. The semiconductor laser device according to any one of claims 1 to 11, further comprising a void surrounded by the bonding surface or the mounting surface, the spacer, and the bonding member.

13. The semiconductor laser device according to any one of claims 1 to 12, wherein the spacer has a groove disposed on a surface facing the joining member.

14. The semiconductor laser device according to any one of claims 1 to 13, wherein the first region protrudes from the second region toward the submount, and the height of the top surface of the spacer from the mounting surface is at least 2 μm greater than the height of the first region from the second region.

15. A semiconductor laser device according to any one of claims 1 to 13, wherein the second region has a non-protruding portion and a protruding portion that protrudes from the non-protruding portion toward the submount, the height of the protruding portion from the non-protruding portion being equal to the height of the first region from the non-protruding portion, and the height of the spacer from the mounting surface being 2 μm or more.

16. The semiconductor laser device according to any one of claims 1 to 15, wherein the joining member is a sintered body of particles made of at least one material selected from the group consisting of Au, Ag, and Cu.

17. A semiconductor laser device according to any one of claims 1 to 16, comprising a through-hole that penetrates between the surface of the spacer that faces the joining member and the surface behind that surface, or a through-hole that is surrounded by the submount and the spacer and penetrates between a position corresponding to the surface of the spacer that faces the joining member and a position corresponding to the surface behind that surface.

18. A method for manufacturing a semiconductor laser device that emits laser light, the semiconductor laser device comprising: a submount having a mounting surface; a spacer; an edge-emitting semiconductor laser element; and a bonding member made of a porous metal material bonding the mounting surface and the semiconductor laser element, the semiconductor laser element having front and rear end faces that form a resonator for the laser light, a bonding surface, a substrate, and a semiconductor laminate disposed between the substrate and the bonding surface, the semiconductor laminate having a ridge extending in the resonance direction of the laser light, the bonding surface having a first region that is a region facing the ridge, and a second region disposed along the first region, the method for manufacturing the semiconductor laser device comprising: a spacer disposing step of disposing the spacer on the mounting surface; a paste disposing step of disposing a metal paste containing metal particles on a region of the mounting surface different from the region where the spacer is disposed; and a pressing step of pressing the first region against the metal paste while the first region of the semiconductor laser element is facing the metal paste and the second region is facing the spacer. and a heating step of heating the metal paste to form the joining member.

19. A method for manufacturing a semiconductor laser device as described in claim 18, wherein the second region has a third region and a fourth region, the first region is disposed between the third region and the fourth region, the spacer has a first spacer and a second spacer, the metal paste is disposed between the first spacer and the second spacer in the paste disposing step, the first region is pressed against the metal paste with the third region facing the first spacer and the fourth region facing the second spacer in the pressing step, and after the pressing step, the distance between the semiconductor laser element and the first spacer and the second spacer is 0.1 μm or less.

20. The method for manufacturing a semiconductor laser device according to claim 19, wherein the distance between the first spacer and the second spacer is smallest at a position closest to the semiconductor laser element.

21. A method for manufacturing a semiconductor laser device according to claim 19, wherein, in a plan view of the mounting surface, the distance between the first spacer and the second spacer between the front end face and the rear end face is largest at a position closest to the rear end face.

22. A method for manufacturing a semiconductor laser device according to any one of claims 19 to 21, wherein the spacer has a third spacer arranged at an end closer to the front end face between the first spacer and the second spacer, and in a plan view of the mounting surface, the third spacer is arranged between the front end face and the rear end face.

23. The method for manufacturing a semiconductor laser device according to any one of claims 18 to 22, wherein the semiconductor laser element is in contact with the spacer.

24. A method for manufacturing a semiconductor laser device according to any one of claims 18 to 23, wherein, in a plan view of the mounting surface, after the heating step, the bonding member is not present outside the semiconductor laser element in a direction perpendicular to the resonance direction.

25. The method for manufacturing a semiconductor laser device according to any one of claims 18 to 24, wherein after the heating step, the distance between the bonding surface and the spacer is 0.1 μm or less at the edge of the bonding surface on the front end face side and the edge of the bonding surface on the rear end face side.

26. A method for manufacturing a semiconductor laser device according to any one of claims 18 to 25, wherein the semiconductor laser device comprises a void surrounded by the bonding surface or the mounting surface, the spacer, and the bonding member.

27. The method for manufacturing a semiconductor laser device according to any one of claims 18 to 26, wherein the spacer has a groove disposed on a surface facing the joining member.

28. A method for manufacturing a semiconductor laser device according to any one of claims 18 to 27, wherein the first region protrudes from the second region toward the submount, and the height of the spacer from the mounting surface is at least 2 μm greater than the height of the first region from the second region.

29. A method for manufacturing a semiconductor laser device according to any one of claims 18 to 28, wherein the second region has a non-protruding portion and a protruding portion that protrudes from the non-protruding portion toward the submount, the height of the protruding portion from the non-protruding portion is equal to the height of the first region from the non-protruding portion, and the height of the spacer from the mounting surface is 2 μm or more.

30. The method for manufacturing a semiconductor laser device according to any one of claims 18 to 29, wherein the metal paste contains particles made of at least one of Au, Ag, and Cu.

31. A method for manufacturing a semiconductor laser device according to any one of claims 18 to 30, wherein the semiconductor laser device has a through-hole that penetrates between the surface of the spacer that faces the joining member and the surface behind that surface, or a through-hole that is surrounded by the submount and the spacer and penetrates between a position corresponding to the surface of the spacer that faces the joining member and a position corresponding to the surface behind that surface.

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