Silicon joint body manufacturing device, silicon joint body manufacturing method, and silicon joint body

Abstract

Provided is a silicon joint body manufacturing device, a silicon joint body manufacturing method, and a silicon joint body, whereby a joined state of one silicon member and another silicon member can be stably maintained. A silicon joint body manufacturing device 10 comprises: a first light source unit 16 that heats and melts, using a first light L1, one surface 22 to be irradiated of one silicon member 11 and another surface 24 to be irradiated of another silicon member 12 to form a silicon melt 60; a second light source unit 17 that heats the silicon melt 60 with a second light L2 and retains the silicon melt 60 in a gap G; and an irradiation control unit 18 that sequentially moves the irradiation positions of the first light L1 and the second light L2 along the gap G to melt the one surface 22 to be irradiated and the other surface 24 to be irradiated, while retaining the silicon melt 60 in the gap G. The first light source unit 16 has at least one of a xenon lamp and a halogen lamp, and the second light source unit 17 has a laser irradiation unit 64.

Description

Silicon bonded body manufacturing apparatus, silicon bonded body manufacturing method, and silicon bonded body

[0001] The present invention relates to a silicon bonded body manufacturing apparatus, a silicon bonded body manufacturing method, and a silicon bonded body.

[0002] Plasma-based dry etching equipment is used as substrate processing equipment in the manufacture of semiconductor integrated devices such as LSIs. In a dry etching equipment, a wafer to be etched is placed on a planar electrode cathode. With etching gas introduced into a vacuum chamber, a high-frequency voltage is applied between the upper electrode (anode) and the cathode by a high-frequency oscillator, generating plasma of the etching gas between the electrodes. Positive ions, which are active gases in the plasma, are incident on the wafer surface, causing etching.

[0003] Various disk-shaped and ring-shaped components are used in the vacuum chamber of a dry etching apparatus. A typical disk-shaped component is an upper electrode plate provided on the upper wall of the vacuum chamber. A typical ring-shaped component is a focus ring that surrounds a wafer to be etched (Patent Document 1).

[0004] The use of metal parts inside the vacuum chamber of a dry etching apparatus would result in metal contamination, so it is preferable to use silicon parts. The upper electrode plate must have a diameter larger than the wafer to be etched. For the currently mainstream 300 mm wafer, a diameter of at least 450 mm or more, e.g., 600 mm or more, is required. 300 mm wafers are produced from silicon crystal ingots with a diameter of approximately 320 mm, but commercially producible silicon crystal ingots have a maximum diameter of approximately 500 mm, which is expensive. It is impossible to produce a disk-shaped member with a diameter of 550 mm or more from such a silicon crystal ingot.

[0005] International Publication No. 2018 / 211788

[0006] If silicon parts could be manufactured by cutting them out of a large-area silicon bonded body made by bonding multiple silicon members, rather than as a single unit, various benefits such as reduced manufacturing costs could be expected. However, when multiple silicon members are bonded over a long distance, distortion at the bonded portion increases, making it difficult to maintain a stable bond.

[0007] An object of the present invention is to provide a silicon bonded body manufacturing apparatus, a silicon bonded body manufacturing method, and a silicon bonded body that can stably maintain a bonded state between one silicon member and another silicon member.

[0008] The silicon bonded body manufacturing apparatus according to the present invention is an apparatus for manufacturing a silicon bonded body by bonding one silicon member to another silicon member, and includes a holding unit that holds the one silicon member and the other silicon member by making one butting surface of the one silicon member face to another butting surface of the other silicon member and interposing a gap between the one butting surface and the other butting surface; a first light source unit that irradiates a first light onto one irradiated surface adjacent to the one butting surface and another irradiated surface adjacent to the other butting surface, and heats and melts the one irradiated surface and the other irradiated surface to form a silicon melt; and a second light source unit that irradiates a second light onto a surface of the silicon melt that has entered the gap, and heats the silicon melt. and an irradiation control unit that sequentially moves the irradiation position of the first light and the irradiation position of the second light on the one silicon member and the other silicon member along the gap, and melts the one irradiated surface and the other irradiated surface along the gap with the first light while holding the silicon melt in the gap with the second light, thereby forming the silicon melt along the gap, wherein the first light source unit has at least one of a xenon lamp and a halogen lamp, and the second light source unit has a laser irradiation unit, and the one silicon member and the other silicon member are joined via a silicon joining portion where the silicon melt formed along the gap is cooled and crystallized.

[0009] A silicon bonded body manufacturing method according to the present invention is a silicon bonded body manufacturing method for manufacturing a silicon bonded body by bonding one silicon member and another silicon member, the method comprising: making one butting surface of the one silicon member face another butting surface of the other silicon member; holding the one silicon member and the other silicon member with a gap between the one butting surface and the other butting surface; irradiating one irradiated surface adjacent to the one butting surface and another irradiated surface adjacent to the other butting surface with first light from a first light source unit constituted by at least one of a xenon lamp and a halogen lamp; heating and melting the one irradiated surface and the other irradiated surface to form a silicon melt. a second light source unit having a laser irradiation unit irradiates a liquid surface of the silicon melt that has entered the gap, the silicon melt is heated and held in the gap, the irradiation position of the first light and the irradiation position of the second light on the one silicon member and the other silicon member are sequentially moved along the gap, and while the silicon melt is held in the gap by the second light, the one irradiated surface and the other irradiated surface are sequentially melted along the gap by the first light, the silicon melt is formed along the gap, and the one silicon member and the other silicon member are joined via a silicon junction where the silicon melt formed along the gap is cooled and crystallized.

[0010] A silicon bonded body according to the present invention includes a first silicon member having a first butting surface, a second silicon member having a second butting surface, and a silicon bonding portion provided between the first butting surface and the second butting surface, bonding the first silicon member to the second silicon member, wherein the silicon bonding portion has a shape that is elongated in one direction and has a longitudinal length of 300 mm or more.

[0011] According to the present invention, one irradiated surface of one silicon member and another irradiated surface of another silicon member are heated and melted with a first light to form a silicon melt; the silicon melt that has entered a gap between one butted surface of the one silicon member and the other butted surface of the other silicon member is heated with a second light to be held in the gap; and the irradiation positions of the first light and the second light are moved along the gap to form a silicon melt along the gap. As the silicon melt cools, unmelted portions of the one silicon member and the other silicon member are crystallized as seed crystals to form a silicon bond. In this way, the one silicon member and the other silicon member are bonded by a silicon bonded portion with stable crystal growth, thereby maintaining a stable bond between the one silicon member and the other silicon member.

[0012] FIG. 1 is a perspective view schematically showing a silicon bonded body manufacturing apparatus according to an embodiment; FIG. 2 is a cross-sectional view of the silicon bonded body manufacturing apparatus according to an embodiment, taken along a plane including a central axis; FIG. 3 is an explanatory view illustrating movement of a first light irradiation position and a second light irradiation position; FIG. 4 is an explanatory view illustrating an operation of the silicon bonded body manufacturing apparatus according to an embodiment; and FIG. 5 is an explanatory view illustrating a silicon bonded body according to an embodiment.

[0013] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description and drawings, common components are designated by common reference numerals. Descriptions of components designated by common reference numerals will be omitted as appropriate.

[0014] (1) Configuration of the Silicon Bonded Body Manufacturing Apparatus FIG. 1 is a perspective view schematically illustrating a silicon bonded body manufacturing apparatus 10 according to this embodiment. The silicon bonded body manufacturing apparatus 10 is configured to manufacture a silicon bonded body by bonding one silicon member 11 and another silicon member 12. The silicon bonded body manufacturing apparatus 10 includes a holding unit 15, first light source units 16A and 16B, second light source units 17A and 17B, and an irradiation control unit 18. The silicon bonded body manufacturing apparatus 10 is configured such that the holding unit 15, the first light source units 16A and 16B, the second light source units 17A and 17B, and the irradiation control unit 18 are housed in a chamber (not shown). An axis passing through the center of the holding unit 15 and extending vertically is defined as a central axis C of the silicon bonded body manufacturing apparatus 10.

[0015] In the drawings referred to below, of the mutually orthogonal X, Y, and Z directions, the X and Y directions indicate horizontal directions, and the Z direction indicates vertical directions. The X direction is also referred to as the width direction of the silicon bonded body manufacturing apparatus or the silicon bonded body. The Y direction is also referred to as the thickness direction of the silicon bonded body manufacturing apparatus or the silicon bonded body. The Z direction is also referred to as the height direction of the silicon bonded body manufacturing apparatus or the silicon bonded body. In the silicon bonded body manufacturing apparatus or the silicon bonded body, the surface in the X1 direction is referred to as the right side, the surface in the X2 direction is referred to as the left side, the surface in the Y1 direction is referred to as the front side, the surface in the Y2 direction is referred to as the back side, the surface in the Z1 direction is referred to as the top side, and the surface in the Z2 direction is referred to as the bottom side.

[0016] The silicon bonded body manufacturing apparatus 10 has a first light source unit 16A and a second light source unit 17A provided on the front surface side of the first silicon member 11 and the other silicon member 12, and a first light source unit 16B and a second light source unit 17B provided on the back surface side of the first silicon member 11 and the other silicon member 12.

[0017] The silicon member 11 has a mating surface 21 and two irradiated surfaces 22A and 22B adjacent to the mating surface 21. The mating surface 21 is the left side surface of the silicon member 11. The irradiated surface 22A is a part of the surface of the silicon member 11 and is a surface within a predetermined distance from the end of the mating surface 21 on the surface side. The irradiated surface 22B is a part of the back surface of the silicon member 11 and is a surface within a predetermined distance from the end of the back surface of the mating surface 21 on the back side. In FIG. 1 , the irradiated surface 22A on the front side is indicated by a dotted line, and the irradiated surface 22B on the back side is hidden. The irradiated surface 22A is irradiated with a first light L1 from a first light source unit 16A (described later), and the irradiated surface 22B is irradiated with a first light L1 from a first light source unit 16B (described later). In the following description, when there is no need to distinguish between the one irradiated surface 22A and the one irradiated surface 22B, they will be referred to as the one irradiated surface 22.

[0018] The other silicon member 12 has another butting surface 23 and other irradiated surfaces 24A and 24B adjacent to the other butting surface 23. The other butting surface 23 is the right side surface of the other silicon member 12. The other irradiated surface 24A is a part of the surface of the other silicon member 12 and is a surface within a predetermined distance from the end of the other butting surface 23 on the surface side. The other irradiated surface 24B is a part of the back surface of the other silicon member 12 and is a surface within a predetermined distance from the end of the back surface of the other butting surface 23 on the back side. In FIG. 1 , the other irradiated surface 24A on the front side is indicated by a dotted line, while the other irradiated surface 24B on the back side is hidden. The other irradiated surface 24A is irradiated with a first light L1 from a first light source unit 16A (described later), and the other irradiated surface 24B is irradiated with a first light L1 from a first light source unit 16B (described later). When the other irradiated surface 24A and the other irradiated surface 24B are not distinguished from each other, they are referred to as the other irradiated surface 24.

[0019] Since the first silicon member 11 and the second silicon member 12 have the same configuration, the first silicon member 11 will be described as an example, and a description of the second silicon member 12 will be omitted.

[0020] The first silicon member 11 is made of silicon. In this embodiment, the first silicon member 11 is single crystal, but may be polycrystalline. The first silicon member 11 is not limited in its manufacturing method, purity, crystal orientation, etc.

[0021] The first silicon member 11 has a shape that is long in one direction (the Z direction in FIG. 1 ). In this embodiment, the first silicon member 11 is made of a plate-like member. In FIG. 1 , the first silicon member 11 is formed in a rectangular shape in a plan view when viewed from the Y direction.

[0022] An example of various dimensions of the first silicon member 11 and the second silicon member 12 will be described below. The height (length in the Z direction) of the first silicon member 11 and the second silicon member 12 is 300 mm or more and 700 mm or less, preferably 550 mm or more and 620 mm or less. The thickness (length in the Y direction) of the first silicon member 11 and the second silicon member 12 is 10 mm or more and 30 mm or less, preferably 14 mm or more and 20 mm or less. The width (length in the X direction) of the first silicon member 11 and the second silicon member 12 is not particularly limited and is, for example, 140 mm or more and 220 mm or less. In this embodiment, the first silicon member 11 and the second silicon member 12 are formed to a height of 600 mm, a thickness of 15 mm, and a width of 150 mm.

[0023] The first butt surface 21 and the second butt surface 23 have a shape that is long in one direction (the Z direction in FIG. 1 ). In FIG. 1 , the first butt surface 21 and the second butt surface 23 are formed in a rectangular shape in a plan view when viewed from the X direction.

[0024] The longitudinal length of the first butt surface 21 and the second butt surface 23 is 300 mm or more, preferably 550 mm or more. The longitudinal direction of the first butt surface 21 and the second butt surface 23 is along the vertical direction (Z direction). That is, the first butt surface 21 and the second butt surface 23 extend along the vertical direction. The longitudinal length of the first butt surface 21 and the second butt surface 23 is 700 mm or less, preferably 620 mm or less.

[0025] The length of the short side perpendicular to the longitudinal direction of the first butting surface 21 and the second butting surface 23 is 10 mm or more, preferably 14 mm or more. In this embodiment, the short side of the first butting surface 21 and the second butting surface 23 is the direction along the thickness direction (Y direction). The length of the short side perpendicular to the longitudinal direction of the first butting surface 21 and the second butting surface 23 is 30 mm or less, preferably 20 mm or less.

[0026] The holding portion 15 holds the first silicon member 11 and the second silicon member 12 by arranging the first butting surface 21 of the first silicon member 11 and the second butting surface 23 of the second silicon member 12 so that a gap G is interposed between the first butting surface 21 and the second butting surface 23. The holding portion 15 holds the first silicon member 11 on the X1 direction side and the second silicon member 12 on the X2 direction side. The first silicon member 11 and the second silicon member 12 are arranged symmetrically about the central axis C when viewed from the Y direction. The first butting surface 21 and the second butting surface 23 are arranged along the vertical direction. The gap G between the first butting surface 21 and the second butting surface 23 extends along the vertical direction. The center of the gap G is located on the central axis C.

[0027] The width of the gap G (length in the X direction) is 500 μm or less, and preferably 100 μm or less. In this embodiment, the width of the gap G is 100 μm. The width of the gap G can be adjusted using a measuring means such as a gap gauge when holding the first silicon member 11 and the second silicon member 12 in the holding portion 15. The width of the gap G (length in the X direction) is 10 μm or more, and preferably 50 μm or more.

[0028] An example of the configuration of the holding portion 15 will be described. The holding portion 15 has a shape that is long in one direction (the X direction in FIG. 1 ). The holding portion 15 is formed into a concave shape in a plan view when viewed from the Y direction.

[0029] The holding portion 15 has a first holding portion 31 that holds one silicon member 11, a second holding portion 32 that holds another silicon member 12, and a connecting portion 33 that connects the first holding portion 31 and the second holding portion 32. In this embodiment, the first holding portion 31, the second holding portion 32, and the connecting portion 33 are integrally formed, but may be formed separately.

[0030] The first retaining portion 31 holds the end portion (lower end portion) in the Z2 direction of one silicon member 11. Note that the first retaining portion 31 is not limited to holding the lower end portion of one silicon member 11, and may hold, for example, the end portion (upper end portion) in the Z1 direction or the end portion (right end portion) in the X1 direction of one silicon member 11.

[0031] 2 is a cross-sectional view of the silicon bonded body manufacturing apparatus 10 taken along a plane (YZ plane) including the central axis C. As shown in Fig. 2, the first retaining part 31 has a base part 34, a front surface abutting part 35 provided on the front surface of the base part 34 and abutting against the front surface of one of the silicon members 11, a first wall part 36 provided on the front surface of the front surface abutting part 35, a back surface abutting part 37 provided on the back surface of the base part 34 and abutting against the back surface of one of the silicon members 11, and a second wall part 38 provided on the back surface of the back surface abutting part 37.

[0032] The base portion 34, the front surface abutment portion 35, the first wall portion 36, the back surface abutment portion 37, and the second wall portion 38 are made of plate-shaped members. The base portion 34, the front surface abutment portion 35, the first wall portion 36, the back surface abutment portion 37, and the second wall portion 38 are made of a heat-resistant material that is heat-resistant enough to prevent melting or deformation due to heat when one silicon member 11 and another silicon member 12 are joined by light heating, as described below. The first wall portion 36 and the second wall portion 38 are made of, for example, stainless steel. The base portion 34, the front surface abutment portion 35, and the back surface abutment portion 37 are made of, for example, quartz.

[0033] The upper surface of the base portion 34 abuts against the lower surface of the first silicon member 11. By placing the first silicon member 11 on the upper surface of the base portion 34, the first silicon member 11 is positioned in the vertical direction. The first wall portion 36 is attached to the base portion 34 via a front surface abutment portion 35 so as to be movable in the thickness direction. The front surface abutment portion 35 moves in the thickness direction together with the first wall portion 36. The second wall portion 38 is attached to the base portion 34 via a back surface abutment portion 37 so as to be movable in the thickness direction. The back surface abutment portion 37 moves in the thickness direction together with the second wall portion 38. The front surface abutment portion 35, the first wall portion 36, the back surface abutment portion 37, and the second wall portion 38 are attached to the base portion 34 using fastening members 39 such as bolts and nuts. A silicon member 11 is placed between the surface abutment portion 35 and the back surface abutment portion 37, and the first wall portion 36 and the second wall portion 38 are attached to the base portion 34 using a fastening member 39, thereby holding the silicon member 11 in the first holding portion 31.

[0034] The second retaining portion 32 holds the end portion (lower end portion) of the other silicon member 12 in the Z2 direction (see FIG. 1 ). Note that the second retaining portion 32 is not limited to holding the lower end portion of the other silicon member 12, and may hold, for example, the end portion (upper end portion) of the other silicon member 12 in the Z1 direction or the end portion (left end portion) of the other silicon member 12 in the X2 direction.

[0035] The second retaining part 32 has a base part 44, a surface abutment part 45 provided on the surface of the base part 44 and abutting against the surface of the other silicon member 12, a first wall part 46 provided on the surface of the surface abutment part 45, a back surface abutment part 47 provided on the back surface of the base part 44 and abutting against the back surface of the other silicon member 12, and a second wall part 48 provided on the back surface of the back surface abutment part 47. The base part 44, surface abutment part 45, first wall part 46, back surface abutment part 47, and second wall part 48 of the second retaining part 32 have the same configurations as the base part 34, surface abutment part 35, first wall part 36, back surface abutment part 37, and second wall part 38 of the first retaining part 31, and therefore detailed description thereof will be omitted.

[0036] The upper surface of the base portion 44 abuts against the lower surface of the other silicon member 12. By placing the other silicon member 12 on the upper surface of the base portion 44, the other silicon member 12 is positioned in the vertical direction. The first wall portion 46 is attached to the base portion 44 via a front surface abutment portion 45 so as to be movable in the thickness direction. The front surface abutment portion 45 moves in the thickness direction together with the first wall portion 46. The second wall portion 48 is attached to the base portion 44 via a back surface abutment portion 47 so as to be movable in the thickness direction. The back surface abutment portion 47 moves in the thickness direction together with the second wall portion 48. The front surface abutment portion 45, the first wall portion 46, the back surface abutment portion 47, and the second wall portion 48 are attached to the base portion 44 using fastening members 39. Another silicon member 12 is placed between the surface abutment portion 45 and the back surface abutment portion 47, and the first wall portion 46 and the second wall portion 48 are attached to the base portion 44 using a fastening member 39, thereby retaining the other silicon member 12 in the second retaining portion 32.

[0037] The connecting portion 33 is configured so as not to come into contact with the first silicon member 11 or the second silicon member 12. The upper surface of the connecting portion 33 is spaced apart from the lower surface of the first silicon member 11 and the lower surface of the second silicon member 12. One abutting surface 21 of the first silicon member 11 and another abutting surface 23 of the second silicon member 12 are arranged above the connecting portion 33. In this embodiment, the first retaining portion 31, the second retaining portion 32, and the connecting portion 33 are connected so that their respective lower surfaces are flush with each other. The vertical length of the connecting portion 33 is set to be shorter than the vertical lengths of the first retaining portion 31 and the second retaining portion 32.

[0038] The connecting portion 33 is composed of a first connecting member 51, a second connecting member 52 provided on the surface of the first connecting member 51, a third connecting member 53 provided on the surface of the second connecting member 52, a fourth connecting member 54 provided on the back surface of the first connecting member 51, and a fifth connecting member 55 provided on the back surface of the fourth connecting member 54 (see Figure 2).

[0039] The first connecting member 51, the second connecting member 52, the third connecting member 53, the fourth connecting member 54, and the fifth connecting member 55 are each composed of a plate-shaped member. The first connecting member 51, the second connecting member 52, the third connecting member 53, the fourth connecting member 54, and the fifth connecting member 55 are formed of a heat-resistant material that is resistant to melting or deformation due to heat when one silicon member 11 and another silicon member 12 are joined by light heating, which will be described later. The third connecting member 53 and the fifth connecting member 55 are formed of, for example, stainless steel. The first connecting member 51, the second connecting member 52, and the fourth connecting member 54 are formed of, for example, quartz.

[0040] An elevation shaft 57 is connected to the holder 15. The elevation shaft 57 is provided so as to protrude downward from the lower surface of the holder 15. The elevation shaft 57 moves the holder 15 vertically upward or downward based on a control signal from an irradiation control unit 18, which will be described later.

[0041] The first light source unit 16A and the first light source unit 16B will be described using Figures 1 and 2. The first light source unit 16A and the first light source unit 16B heat the first silicon member 11 and the second silicon member 12 using a first light L1. Heating using light is referred to as "light heating." The first light source unit 16A irradiates the first light L1 from the front side of the first silicon member 11 and the second silicon member 12. The first light source unit 16B irradiates the first light L1 from the back side of the first silicon member 11 and the second silicon member 12. In the following description, when there is no need to distinguish between the first light source unit 16A and the first light source unit 16B, they will be referred to as the first light source unit 16.

[0042] The first light source unit 16A irradiates the first light L1 onto the first irradiated surface 22A of the first silicon member 11 and the second irradiated surface 24A of the second silicon member 12. The first light source unit 16A includes at least one of a xenon lamp and a halogen lamp. Specifically, the first light source unit 16A includes a lamp unit 58 that emits the first light L1 and a condenser unit 59 that condenses the first light L1. The lamp unit 58 is configured with at least one of a xenon lamp and a halogen lamp. The condenser unit 59 is configured with, for example, a mirror having a reflective surface with an ellipsoidal shape. The first light source unit 16A controls the emission timing and output of the first light L1 based on a control signal from the irradiation control unit 18, which will be described later. The output of the first light source unit 16A is, for example, 1 kW to 30 kW.

[0043] The direction of the optical axis P1 of the first light source unit 16A is set so that the first light L1 is irradiated onto the first irradiation surface 22A and the other irradiation surface 24A. The direction of the optical axis P1 of the first light source unit 16A can be changed by a moving and rotating mechanism (not shown). The moving and rotating mechanism is composed of, for example, a moving body that moves along the Y and Z directions and a horizontal shaft attached to the moving body and extending along the X direction. The first light source unit 16A is rotatably supported on the horizontal shaft of the moving and rotating mechanism. The moving and rotating mechanism moves the first light source unit 16A within the YZ plane and rotates the first light source unit 16A around the horizontal axis based on a control signal from the irradiation control unit 18 (described later). The moving and rotating mechanism sets the direction of the optical axis P1 of the first light source unit 16A to a desired direction.

[0044] When the direction of the optical axis P1 of the first light source unit 16A is the irradiation direction of the first light L1, the angle θ1 between the irradiation direction of the first light L1 and the vertical direction is greater than 0° and less than 180°, and preferably greater than or equal to 85° and less than or equal to 95°. The first light source unit 16A irradiates the first light L1 from the horizontal direction onto the one irradiation surface 22A and the other irradiation surface 24A.

[0045] The first light source unit 16A irradiates the first light L1 onto the first irradiated surface 22A and the second irradiated surface 24A, thereby heating and melting the first irradiated surface 22A and the second irradiated surface 24A to form a silicon melt 60. The silicon melt 60 is formed from silicon constituting the first silicon member 11 and the second silicon member 12.

[0046] The first light source unit 16B irradiates the first irradiated surface 22B of the first silicon member 11 and the other irradiated surface 24B of the other silicon member 12 with a first light L1. In this embodiment, the first light source unit 16B has the same configuration as the first light source unit 16A, and therefore detailed description thereof will be omitted. However, the first light source unit 16B includes at least one of a xenon lamp and a halogen lamp. The first light source unit 16B irradiates the first irradiated surface 22B and the other irradiated surface 24B with the first light L1, thereby heating and melting the first irradiated surface 22B and the other irradiated surface 24B to form a silicon melt 60.

[0047] The melting of the first irradiated surface 22A and the other irradiated surface 24A spreads within each of the first irradiated surface 22A and the other irradiated surface 24A by increasing the output of the first light L1 from the first light source unit 16A. The melting caused by the first light L1 from the first light source unit 16A spreads not only within each of the first irradiated surface 22A and the other irradiated surface 24A, but also to each of the first butting surface 21 and the other butting surface 23 by heat transfer. The melting of the first irradiated surface 22B and the other irradiated surface 24B spreads within each of the first irradiated surface 22B and the other irradiated surface 24B by increasing the output of the first light L1 from the first light source unit 16B. The melting caused by the first light L1 of the first light source unit 16B spreads not only within each of the first irradiated surface 22B and the other irradiated surface 24B, but also to each of the first butting surface 21 and the other butting surface 23 due to heat transfer.

[0048] Melting progresses from both the front surface side (first light source unit 16A side) and the back surface side (first light source unit 16B side) of the first butting surface 21 and the other butting surface 23. The silicon melt 60, which increases in volume as the melted portion spreads, not only connects the front surface side and the back surface side, but also comes into contact across the gap G due to capillary action and becomes integrated as a whole due to surface tension. As a result, silicon melt 60 is formed to fill the gap G.

[0049] The second light source unit 17A and the second light source unit 17B will be described using Figures 1 and 2. The second light source unit 17A and the second light source unit 17B heat (optical heating) the silicon melt 60 using second light L2. The second light source unit 17A irradiates the second light L2 from the front side of the first silicon member 11 and the second silicon member 12. The second light source unit 17B irradiates the second light L2 from the back side of the first silicon member 11 and the second silicon member 12. In the following description, when there is no need to distinguish between the second light source unit 17A and the second light source unit 17B, they will be referred to as the second light source unit 17.

[0050] The second light source unit 17A irradiates the second light L2 onto the liquid surface 61 of the silicon melt 60. The liquid surface 61 of the silicon melt 60 is the upper surface of the silicon melt 60, and is disposed inside the gap G. The second light L2 passes through the gap G and reaches the liquid surface 61 of the silicon melt 60.

[0051] The second light source unit 17A has a laser irradiation unit 64 that emits laser light. The laser irradiation unit 64 is configured with a semiconductor laser. Semiconductor lasers are easy to maintain and have excellent power efficiency. The second light L2 may be light that is generally used to heat metals. The wavelength of the second light L2 is not particularly limited, and may be an infrared wavelength (e.g., 780 nm to 1600 nm). The second light source unit 17A controls the emission timing and output of the second light L2 based on a control signal from an irradiation control unit 18, which will be described later. The output of the second light source unit 17A is, for example, 0.2 kW to 1 kW.

[0052] The second light source unit 17A irradiates the liquid surface 61 of the silicon melt 60 with a slit-shaped (linear) second light L2. The second light source unit 17A has, for example, a focusing optical system (not shown) and can focus the laser light emitted from the laser irradiation unit 64 via the focusing optical system onto the liquid surface 61 of the silicon melt 60 in a slit shape. The slit-shaped second light L2 extends in the Y direction on the liquid surface 61. The second light source unit 17A irradiates the liquid surface 61 of the silicon melt 60 with the slit-shaped second light L2, thereby efficiently heating the silicon melt 60. The width (length in the X direction) of the slit-shaped second light L2 is not particularly limited, but is preferably equal to or smaller than the width of the gap G, and is 50 μm in this embodiment. The longitudinal length of the slit-shaped second light L2 (length in the Y direction on the liquid surface 61) is not particularly limited, but is set to 15 mm in this embodiment, which is the same as the thickness of the first silicon member 11 and the second silicon member 12.

[0053] The direction of the optical axis P2 of the second light source unit 17A is set so that the second light L2 is irradiated onto the liquid surface 61 of the silicon melt 60 inside the gap G. The direction of the optical axis P2 of the second light source unit 17A can be changed by a movement and rotation mechanism (not shown). The movement and rotation mechanism for changing the direction of the optical axis P2 has the same configuration as the movement and rotation mechanism for changing the direction of the optical axis P1 described above, and therefore detailed description will be omitted. However, based on a control signal from the irradiation control unit 18 (described later), the second light source unit 17A is moved within the YZ plane and rotated about a horizontal axis. The movement and rotation mechanism sets the direction of the optical axis P2 of the second light source unit 17A in a desired direction.

[0054] When the direction of the optical axis P2 of the second light source unit 17A is the irradiation direction of the second light L2, the angle θ2 between the irradiation direction of the second light L2 and the vertical direction is equal to or greater than 0° and less than 90°. The second light source unit 17A irradiates the second light L2 onto the liquid surface 61 of the silicon melt 60 from diagonally above. The second light source unit 17A can irradiate the second light L2 onto the liquid surface 61 of the silicon melt 60 inside the gap G as long as the irradiation direction of the second light L2 is inclined upward with respect to the horizontal direction.

[0055] The second light source unit 17A heats the silicon melt 60 by irradiating the liquid surface 61 of the silicon melt 60 inside the gap G with the second light L2. The second light L2 suppresses a decrease in the temperature of the silicon melt 60 and prevents solidification of the liquid surface 61. This maintains the liquid phase, i.e., the silicon melt 60, in the gap G.

[0056] The second light source unit 17B irradiates the liquid surface 61 of the silicon melt 60 with second light L2. The second light source unit 17B has a laser irradiation unit 64 that emits laser light. In this embodiment, the second light source unit 17B has the same configuration as the second light source unit 17A, and therefore detailed description thereof will be omitted.

[0057] The second light source unit 17B heats the silicon melt 60 by irradiating the liquid surface 61 of the silicon melt 60 disposed inside the gap G with the second light L2. The second light L2 suppresses a decrease in the temperature of the silicon melt 60, thereby preventing solidification of the silicon. This maintains the liquid phase, i.e., the silicon melt 60, in the gap G.

[0058] 2 , the second light L2 from the second light source unit 17A and the second light L2 from the second light source unit 17B are irradiated so as to overlap at the liquid surface 61 of the silicon melt 60. The silicon melt 60 is efficiently heated, and a decrease in the temperature of the silicon melt 60 is further suppressed. Note that the second light L2 from the second light source unit 17A and the second light L2 from the second light source unit 17B may be irradiated so as not to overlap at the liquid surface 61 of the silicon melt 60.

[0059] The irradiation control unit 18 includes a central processing unit (CPU), and storage units such as a read-only memory (ROM) and a random access memory (RAM). The CPU executes various arithmetic operations using programs and data stored in the ROM and RAM, and controls the operation of each unit of the silicon bonded body manufacturing apparatus 10.

[0060] 3 , the irradiation control unit 18 sequentially moves the irradiation positions of the first light L1 and the second light L2 on the first silicon member 11 and the second silicon member 12 along the gap G. In this embodiment, the irradiation control unit 18 sequentially moves the holder 15 from top to bottom in the vertical direction using an elevation shaft 57 connected to the holder 15. As the holder 15 sequentially moves from top to bottom, the first silicon member 11 and the second silicon member 12 held by the holder 15 also sequentially move from top to bottom. As the first silicon member 11 and the second silicon member 12 move, the irradiation positions of the first light L1 and the second light L2 on the first silicon member 11 and the second silicon member 12 move relatively. In this way, the irradiation control unit 18 sequentially moves the holding unit 15 from top to bottom in the vertical direction, thereby sequentially moving the irradiation position of the first light L1 and the irradiation position of the second light L2 on one silicon member 11 and the other silicon member 12 from bottom to top along the gap G.

[0061] The irradiation control unit 18 can control the direction and speed of movement of the holding unit 15 by the elevator shaft 57. By changing the movement speed of the holding unit 15, the irradiation control unit 18 can control the movement speed of the irradiation position of the first light L1 and the irradiation position of the second light L2.

[0062] After the irradiation position of the first light L1 and the irradiation position of the second light L2 are moved, the silicon melt 60 formed at the irradiation position before the movement is cooled, and the unmelted portions of the one silicon member 11 and the other silicon member 12 are recrystallized using as seed crystals to form a silicon bonded portion 70. The silicon bonded portion 70 has a configuration in which one silicon bonded portion made of single crystal silicon that inherits the crystallinity of the one butting surface 21 and another silicon bonded portion made of single crystal silicon that inherits the crystallinity of the other butting surface 23 are integrated and bonded at the atomic level.

[0063] The joining speed for joining the first silicon member 11 and the second silicon member 12 is 100 μm / sec or more, preferably 150 μm / sec or more. Here, the joining speed refers to the length of the first silicon member 11 and the second silicon member 12 joined via the silicon joining portion 70 per unit time. The joining speed is set to a desired speed by controlling the movement speed of the irradiation position of the first light L1 and the irradiation position of the second light L2. In this embodiment, the joining speed is 200 μm / sec. The joining speed for joining the first silicon member 11 and the second silicon member 12 is 600 μm / sec or less, preferably 400 μm / sec or less.

[0064] The irradiation control unit 18 irradiates the liquid surface 61 of the silicon melt 60 with the second light L2 from the second light source unit 17, thereby holding the silicon melt 60 in the gap G, and irradiates the first light L1 from the first light source unit 16 onto the one irradiated surface 22 and the other irradiated surface 24, thereby melting the one irradiated surface 22 and the other irradiated surface 24 sequentially along the gap G, thereby forming the silicon melt 60 along the gap G. The one silicon member 11 and the other silicon member 12 are joined via a silicon joint 70 where the silicon melt 60 formed along the gap G is cooled and crystallized.

[0065] The silicon bonded body manufacturing apparatus 10 further includes a heater 66 for heating the vicinity of a bonded portion 68 between the first silicon member 11 and the second silicon member 12 (see FIG. 1 ). The bonded portion 68 is composed of the first butting surface 21, the first irradiated surfaces 22A and 22B, the second butting surface 23, and the second irradiated surfaces 24A and 24B.

[0066] The power source for heating the heater 66 is electrically connected to the irradiation control unit 18, and the timing and temperature for heating the joint 68 are controlled based on control signals from the irradiation control unit 18. In this embodiment, the heater 66 is composed of four carbon heaters, and is provided adjacent to each of the first irradiated surface 22A, the first irradiated surface 22B, the second irradiated surface 24A, and the second irradiated surface 24B that make up the joint 68. The heaters 66 are provided so as to heat an area, for example, 50 mm to the left and right of the joint 68. Note that the heater 66 provided adjacent to the first irradiated surface 22A and the heater 66 provided adjacent to the first irradiated surface 22B are omitted from FIGS. 2 and 3 .

[0067] When the first light source unit 16 and the second light source unit 17 start to be driven, the heater 66 heats the bonded portion 68 to a temperature that does not melt the bonded portion 68, for example, so that the temperature of the bonded portion 68 reaches approximately 800° C. When the driving of the first light source unit 16 and the second light source unit 17 stops, the heater 66 gradually lowers the temperature of the bonded portion 68. As a result, crystal growth becomes more stable, and distortion occurring in the bonded portion 68 is suppressed.

[0068] (2) Operation and Effects of the Silicon Bonded Body Manufacturing Apparatus The operation of the silicon bonded body manufacturing apparatus 10 configured as described above will be described. As shown in FIG. 1 , the holding unit 15 holds one silicon member 11 in an upright position so that the longitudinal direction of the silicon member 11 is parallel to the vertical direction (Z direction), and holds another silicon member 12 in an upright position spaced apart from the first silicon member 11 in the width direction (X direction) so that the longitudinal direction of the other silicon member 12 is parallel to the vertical direction. Holding the first silicon member 11 and the other silicon member 12 in an upright position is also referred to as "vertical placement." One butting surface 21 of the first silicon member 11 and another butting surface 23 of the other silicon member 12 face each other and are arranged vertically. A gap G extending vertically is formed between the one butting surface 21 and the other butting surface 23. The width of the gap G is adjusted by moving at least one of the first retaining portion 31 and the second retaining portion 32 in the width direction when the first retaining portion 31 and the second retaining portion 32 are held by the holding portion 15.

[0069] The irradiation control unit 18 sets the angle θ1 between the irradiation direction of the first light L1 from the first light source unit 16 (the direction of the optical axis P1) and the vertical direction to more than 0° and less than 180°, sets the angle θ2 between the irradiation direction of the second light L2 from the second light source unit 17 (the direction of the optical axis P2) and the vertical direction to 0° or more and less than 90°, and sets the irradiation positions of the first light L1 and the second light L2 to the lower ends of the gap G. The irradiation control unit 18 drives the heater 66 to heat the joint portion 68 from both sides (the front and back sides) and controls the temperature of the joint portion 68 to 800°C.

[0070] As shown in FIG. 2 , the irradiation control unit 18 drives the first light source unit 16 at an output of 5 kW to irradiate the first light L1 near the lower end of the gap G. The lower end of the first irradiated surface 22 and the lower end of the other irradiated surface 24 are heated and melted by the first light L1 to form a silicon melt 60. The silicon melt 60 formed at the lower end of the first irradiated surface 22 and the lower end of the other irradiated surface 24 flows into the gap G by capillary action. The irradiation control unit 18 reduces the output of the first light source unit 16 to 3 kW and drives the second light source unit 17 at an output of 0.3 kW to irradiate the second light L2 onto the liquid surface 61 of the silicon melt 60 that has flowed into the gap G. The silicon melt 60 is heated by the second light L2, and the silicon melt 60 is held in the gap G. Furthermore, even if the silicon melt 60 that has entered the gap G solidifies, the solidified portion is heated and melted by the second light L2, returning to a liquid phase, and the silicon melt 60 can be retained in the gap G.

[0071] As shown in FIG. 3 , the irradiation control unit 18 starts moving the holding unit 15 vertically from top to bottom using the lifting shaft 57 at a moving speed of 200 μm / sec. As the holding unit 15 moves vertically downward, the irradiation positions of the first light L1 and the second light L2 on the first silicon member 11 and the second silicon member 12 move vertically upward relative to each other. As the irradiation position of the first light L1 moves vertically upward, the first irradiated surface 22 and the second irradiated surface 24 are heated and melted vertically upward, forming new silicon melt 60. The new silicon melt 60 flows into the gap G by capillary action. At this time, silicon melt 60 is held in the gap G, and the new silicon melt 60 merges with the silicon melt 60 held in the gap G. As a result, the liquid level 61 of the silicon melt 60 in the gap G rises. As the irradiation position of the second light L2 moves vertically upward, the second light L2 is irradiated onto the raised liquid surface 61, the silicon melt 60 inside the gap G is heated, and the silicon melt 60 is held in the gap G. By continuing to irradiate the second light L2 onto the liquid surface 61 of the silicon melt 60, the rise of the liquid surface 61 of the silicon melt 60 can be promoted.

[0072] 3, the irradiation position of the first light L1 and the irradiation position of the second light L2 are set near the center in the vertical direction of the gap G. The silicon melt 60 is held near the center in the vertical direction of the gap G, and below that, the silicon melt 60 is cooled, resulting in the formation of a silicon bond 70.

[0073] As shown in FIG. 4 , the irradiation control unit 18 stops the movement of the holding unit 15 after moving the irradiation positions of the first light L1 and the second light L2 to the upper end of the gap G. In this way, the irradiation control unit 18 moves the irradiation positions of the first light L1 and the second light L2 from the lower end to the upper end of the gap G, thereby forming a silicon melt 60 along the gap G. The irradiation control unit 18 stops the driving of the first light source unit 16 and the second light source unit 17 and gradually reduces the output of the heater 66 to gradually cool the silicon melt 60. As a result, a silicon bonded portion 70 is formed along the gap G. Although FIG. 4 shows the silicon bonded portion 70 formed across the entire vertical length of the gap G, the silicon bonded portion 70 may be formed only in a portion of the vertical length of the gap G. For example, the irradiation position of the first light L1 and the irradiation position of the second light L2 may be moved from the lower end to the upper end of the gap G, and the driving of the first light source unit 16 and the second light source unit 17 may be stopped before the irradiation position of the first light L1 and the irradiation position of the second light L2 reach the upper end of the gap G.

[0074] As shown in FIG. 5 , one silicon member 11 and another silicon member 12 are bonded together by a silicon bonding portion 70 formed along the gap G, thereby producing a silicon bonded body 71. The silicon bonding portion 70 has a shape that is long in one direction (the Z direction in FIG. 5 ). In a plan view seen from the Y direction, the silicon bonding portion 70 is formed into a rectangular shape extending in the Z direction. The longitudinal length of the silicon bonding portion 70 is 300 mm or more, preferably 550 mm or more. The longitudinal length of the silicon bonding portion 70 is the length in the Z direction, i.e., the height of the silicon bonding portion 70. The longitudinal length of the silicon bonding portion 70 is 700 mm or less, preferably 620 mm or less.

[0075] The silicon bonding portion 70 has a length in the short direction (X direction) perpendicular to the longitudinal direction (Z direction) in a plan view seen from the Y direction, i.e., a width of 500 μm or less, preferably 100 μm or less. The width of the silicon bonding portion 70 is 10 μm or more, preferably 50 μm or more.

[0076] The silicon joint 70 has a length in the direction perpendicular to the longitudinal and lateral directions (Y direction), i.e., a thickness of 10 mm or more, preferably 14 mm or more, and a thickness of 30 mm or less, preferably 20 mm or less.

[0077] As described above, according to the silicon bonded body manufacturing apparatus 10 of the present embodiment, by irradiating the first irradiated surface 22 of the first silicon member 11 and the other irradiated surface 24 of the other silicon member 12 with the first light L1 from the first light source unit 16, the first irradiated surface 22 and the other irradiated surface 24 are heated and melted to form the silicon melt 60, and by irradiating the second light L2 from the second light source unit 17 to the liquid surface 61 of the silicon melt 60 inside the gap G formed between the first butted surface 21 of the first silicon member 11 and the other butted surface 23 of the other silicon member 12, the silicon melt 60 is heated from inside the gap G and the silicon melt 60 is held in the gap G. The silicon bonded body manufacturing apparatus 10 can stably grow a crystal while holding the silicon melt 60 in the gap G, thereby stably maintaining the bonded state between the first silicon member 11 and the other silicon member 12.

[0078] The silicon bonded body manufacturing apparatus 10 manufactures a silicon bonded body 71 by bonding one butting surface 21 and another butting surface 23, each having a longitudinal length of 300 mm or more, with a silicon bonding portion 70. The longitudinal length of the silicon bonding portion 70 is 300 mm or more. The silicon bonded body manufacturing apparatus 10 irradiates the second light L2 from the second light source unit 17 onto the liquid surface 61 of the silicon melt 60 inside the gap G, thereby enabling stable crystal growth while the silicon melt 60 is held inside the gap G. Therefore, even when bonding is performed over a long distance of 300 mm or more, distortion during solidification of the silicon melt 60 can be suppressed, and a stable bonded state between the one silicon member 11 and the other silicon member 12 can be maintained.

[0079] The silicon bonded body manufacturing apparatus 10 manufactures a silicon bonded body 71 by bonding, via a silicon bonding portion 70, one butted surface 21 and another butted surface 23, each having a length of 10 mm or more in a lateral direction perpendicular to the longitudinal direction. The silicon bonding portion 70 has a thickness of 10 mm or more. The silicon bonded body manufacturing apparatus 10 irradiates the second light L2 from the second light source unit 17 onto the liquid surface 61 of the silicon melt 60 inside the gap G, thereby heating the silicon melt 60 from inside the gap G. Therefore, even when the first silicon member 11 and the second silicon member 12 are thick, the bonded state between the first silicon member 11 and the second silicon member 12 can be stably maintained.

[0080] In the silicon bonded body manufacturing apparatus 10, the second light source unit 17 has the laser irradiation unit 64, so that the second light L2 as a laser beam can be irradiated onto the liquid surface 61 of the silicon melt 60 through the gap G having a width of 500 μm or less, and the silicon melt 60 can be held inside the gap G. The silicon bonded body manufacturing apparatus 10 can reduce the width of the gap G. When the width of the gap G is reduced, volume expansion of the silicon melt 60 during solidification can be suppressed, and overall distortion of the silicon bonded body 71 can be suppressed even when bonding is performed over a longer distance.

[0081] The silicon bonded body manufacturing apparatus 10 irradiates the second light L2 from the second light source unit 17 onto the liquid surface 61 of the silicon melt 60 inside the gap G, thereby enabling the silicon melt 60 to be stably held inside the gap G at a bonding speed of 100 μm / sec or more. The silicon bonded body manufacturing apparatus 10 can achieve a high bonding speed.

[0082] In the silicon bonded body manufacturing apparatus 10, the second light source unit 17A irradiates the slit-shaped second light L2 onto the liquid surface 61 of the silicon melt 60 inside the gap G, so that the silicon melt 60 can be efficiently heated.

[0083] The silicon bonded body manufacturing apparatus 10 forms the silicon melt 60 along the gap G, and when the driving of the first light source unit 16 and the second light source unit 17 is stopped, the heater 66 gradually lowers the temperature of the bonded portion 68, thereby enabling more stable crystal growth. Since distortion occurring in the bonded portion 68 can be suppressed, the silicon bonded body 71 is less likely to crack.

[0084] The silicon bonded body manufacturing apparatus 10 includes a first light source unit 16 having a lamp unit 58 and a second light source unit 17 having a laser irradiation unit 64, and is capable of irradiating the liquid surface 61 of the silicon melt 60 inside the gap G with the second light L2, thereby heating the silicon melt 60 from inside the gap G. Therefore, even if the output of the first light source unit 16 is reduced, the silicon melt 60 can be held in the gap G, and power consumption can be reduced.

[0085] The silicon bonded body manufacturing apparatus 10 is provided with a first light source unit 16A and a second light source unit 17A on the front side and a first light source unit 16B and a second light source unit 17B on the back side, and is capable of irradiating the first irradiated surfaces 22A, 22B and the other irradiated surfaces 24A, 24B with a first light L1 to heat them, and irradiating the liquid surface 61 of the silicon melt 60 inside the gap G with a second light L2 from the front side and the back side to heat the silicon melt 60. This makes it easier to fill the gap G with the silicon melt 60, and enables the bonding state between the one silicon member 11 and the other silicon member 12 to be maintained more stably.

[0086] (3) Silicon Bonded Body Manufacturing Method The silicon bonded body manufacturing method will be described. The silicon bonded body manufacturing method can be performed using a silicon bonded body manufacturing apparatus 10. First, the first butted surface 21 of the first silicon member 11 and the second butted surface 23 of the second silicon member 12 are placed face to face, and the first silicon member 11 and the second silicon member 12 are held with a gap G between the first butted surface 21 and the second butted surface 23. Next, the heater 66 is driven to heat a bonding portion 68 consisting of the first butted surface 21, the first irradiated surface 22 adjacent to the first butted surface 21, the second butted surface 23, and the second irradiated surface 24 adjacent to the second butted surface 23. Next, the first light source unit 16 is driven to irradiate the first irradiated surface 22 and the second irradiated surface 24 with first light L1 from the first light source unit 16, thereby heating and melting the first irradiated surface 22 and the second irradiated surface 24 to form a silicon melt 60. Next, the second light source unit 17 is driven, and the second light source unit 17 irradiates the liquid surface 61 of the silicon melt 60 that has entered the gap G with the second light L2, heating the silicon melt 60 and holding it in the gap G. Next, the irradiation positions of the first light L1 and the second light L2 on the first silicon member 11 and the other silicon member 12 are sequentially moved along the gap G, and while the second light L2 holds the silicon melt 60 inside the gap G, the first light L1 melts the first irradiated surface 22 and the other irradiated surface 24 sequentially along the gap G, forming the silicon melt 60 along the gap G. Next, the driving of the first light source unit 16 and the second light source unit 17 is stopped, and the heater 66 gradually lowers the temperature of the joint portion 68. The silicon melt 60 formed along the gap G is cooled and crystallized, and the silicon member 11 and the other silicon member 12 are bonded together via the silicon bonded portion 70, thereby producing a silicon bonded body 71.

[0087] (4) Function and Effect of the Silicon Bonded Body Manufacturing Method According to the silicon bonded body manufacturing method of the present embodiment, by irradiating the first irradiated surface 22 of the first silicon member 11 and the other irradiated surface 24 of the other silicon member 12 with the first light L1, the first irradiated surface 22 and the other irradiated surface 24 are heated and melted to form a silicon melt 60, and by irradiating the second light L2 onto the liquid surface 61 of the silicon melt 60 inside the gap G formed between the first butting surface 21 of the first silicon member 11 and the other butting surface 23 of the other silicon member 12, the silicon melt 60 is heated from inside the gap G, and the silicon melt 60 can be held in the gap G. Since stable crystal growth can be achieved while the silicon melt 60 is held in the gap G, the bonded state between the first silicon member 11 and the other silicon member 12 can be stably maintained.

[0088] The silicon bonded body 71 can be cut into various shapes. For example, a disk-shaped member can be produced by cutting the silicon bonded body 71 into a disk shape. The disk-shaped member produced from the silicon bonded body 71 can be used, for example, as a silicon part of a dry etching apparatus. Here, an example of a dry etching apparatus will be described. The dry etching apparatus includes a vacuum chamber as a processing chamber, an upper electrode plate provided on the upper wall of the vacuum chamber, and a base on which a wafer is placed. The upper electrode plate is a disk-shaped member made of silicon. The silicon bonded body 71 can be used as an upper electrode plate as a silicon part of a dry etching apparatus. Note that a ring-shaped member may also be produced by cutting the silicon bonded body 71 into a ring shape.

[0089] The present invention is not limited to the above-described embodiment, and can be modified as appropriate within the scope of the invention.

[0090] In the above embodiment, the first silicon member 11 and the second silicon member 12 are made of plate-shaped members, but are not limited to this and may be made of, for example, columnar members, arc-shaped members, etc.

[0091] The first silicon member 11 and the second silicon member 12 are not limited to being formed in a rectangular shape when viewed in a plan view from the Y direction, but may be formed in a polygonal shape such as a triangular or trapezoidal shape, or in an arc shape when viewed in a plan view from the Y direction, for example.

[0092] The silicon bonded body 71 is formed into a polygonal ring shape by alternately bonding a plurality of first silicon members 11 and other silicon members 12 each having a trapezoidal shape in a plan view seen from the Y direction. Ring-shaped members may be cut out from the polygonal ring-shaped silicon bonded body 71.

[0093] In the above embodiment, the irradiation control unit 18 sequentially moves the holding unit 15 from top to bottom in the vertical direction to sequentially move the irradiation positions of the first light L1 and the second light L2 on the one silicon member 11 and the other silicon member 12 from bottom to top along the gap G, but this is not limiting. The irradiation control unit 18 may sequentially move the irradiation positions of the first light L1 and the second light L2 from bottom to top along the gap G by sequentially moving the first light source unit 16 and the second light source unit 17 from bottom to top along the gap G using a moving and rotating mechanism (not shown).

[0094] The second light L2 is not limited to being slit-shaped light, and may be, for example, spot-shaped (point-shaped) light. The second light source unit 17A focuses the laser light emitted from the laser irradiation unit 64 via a focusing optical system into a spot on the liquid surface 61 of the silicon melt 60. When using spot-shaped second light L2, the second light L2 may be irradiated onto the liquid surface 61 so as to scan in the Y direction.

[0095] In the above embodiment, the holding portion 15 holds the first silicon member 11 and the second silicon member 12 in a "vertical" position, in which they are in an upright position, but this is not limited to this, and for example, the holding portion 15 may hold the first silicon member 11 and the second silicon member 12 in a "horizontal" position, in which they are in a lying position.

[0096] REFERENCE SIGNS LIST 10 silicon bonded body manufacturing apparatus 11 one silicon member 12 other silicon member 15 holding unit 16, 16A, 16B first light source unit 17, 17A, 17B second light source unit 18 irradiation control unit 21 one abutting surface 22, 22A, 22B one irradiated surface 23 other abutting surface 24, 24A, 24B other irradiated surface 58 lamp unit 59 light collecting unit 60 silicon melt 61 liquid surface 64 laser irradiation unit 66 heater C central axis G gap L1 first light L2 second light

Claims

1. A silicon bonded body manufacturing apparatus for manufacturing a silicon bonded body by bonding one silicon member to another silicon member, comprising: a holding unit that holds the first silicon member and the other silicon member by arranging one butting surface of the first silicon member and another butting surface of the other silicon member facing each other and leaving a gap between the first butting surface and the other butting surface; a first light source unit that irradiates with a first light a first irradiated surface adjacent to the first butting surface and another irradiated surface adjacent to the other butting surface, and heats and melts the first irradiated surface and the other irradiated surface to form a silicon melt; and a second light source unit that irradiates with a second light a surface of the silicon melt that has entered the gap, and heats and holds the silicon melt in the gap. an irradiation control unit that sequentially moves an irradiation position of the first light and an irradiation position of the second light on the one silicon member and the other silicon member along the gap, and melts the one irradiated surface and the other irradiated surface along the gap by the first light while holding the silicon melt in the gap by the second light, thereby forming the silicon melt along the gap, wherein the first light source unit has at least one of a xenon lamp and a halogen lamp, and the second light source unit has a laser irradiation unit, and the one silicon member and the other silicon member are bonded together at a silicon bonding portion where the silicon melt formed along the gap is cooled and crystallized.

2. The silicon bonded body manufacturing apparatus according to claim 1, wherein the first butting surface and the second butting surface are elongated in one direction, with the longitudinal length being 300 mm or more.

3. The silicon bonded body manufacturing apparatus according to claim 2, wherein the length of the first butting surface and the second butting surface in the short direction perpendicular to the long direction is 10 mm or more.

4. The silicon junction manufacturing apparatus according to claim 3, wherein the width of the gap is 500 μm or less.

5. The silicon bonded body manufacturing apparatus according to claim 1, wherein the bonding speed for bonding the one silicon member and the other silicon member is 100 μm / sec or more.

6. The silicon junction manufacturing apparatus according to claim 1, wherein the second light is a slit-shaped light.

7. The silicon junction manufacturing apparatus according to claim 1, wherein the one butting surface and the other butting surface extend along a vertical direction, the angle between the irradiation direction of the first light and the vertical direction is greater than 0° and less than 180°, and the angle between the irradiation direction of the second light and the vertical direction is greater than 0° and less than 90°.

8. A method for manufacturing a silicon bonded body by bonding one silicon member to another silicon member, comprising: placing one butting surface of the first silicon member and another butting surface of the other silicon member face to face, and holding the first silicon member and the other silicon member with a gap between the first butting surface and the other butting surface; irradiating one irradiated surface adjacent to the first butting surface and another irradiated surface adjacent to the other butting surface with first light from a first light source unit consisting of at least one of a xenon lamp and a halogen lamp, heating and melting the first irradiated surface and the other irradiated surface to form a silicon melt; irradiating a surface of the silicon melt that has entered the gap with second light from a second light source unit having a laser irradiation unit, heating the silicon melt and holding it in the gap; a silicon bonded body manufacturing method, comprising: sequentially moving an irradiation position of the first light and an irradiation position of the second light on the one silicon member and the other silicon member along the gap; melting the one irradiated surface and the other irradiated surface sequentially along the gap with the first light while holding the silicon melt in the gap with the second light, thereby forming the silicon melt along the gap; and bonding the one silicon member and the other silicon member via a silicon bonding portion formed by cooling and crystallizing the silicon melt formed along the gap.

9. A silicon bonded body comprising: one silicon member having one butting surface; another silicon member having another butting surface; and a silicon bonding portion provided between the one butting surface and the other butting surface, bonding the one silicon member to the other silicon member, wherein the silicon bonding portion has a shape that is long in one direction and has a longitudinal length of 300 mm or more.

Images