Bolometer element, manufacturing method therefor, and infrared sensing element comprising same

Abstract

The present invention relates to a bolometer element manufacturing method, a bolometer element, and an infrared sensing element comprising same. The bolometer element manufacturing method of the present invention may comprise the steps of: calculating an optimized value of a heterogeneous thin film by using an artificial intelligence (AI) inverse design method; setting a heterogeneous thin film on the basis of the optimized value; and manufacturing the set heterogeneous thin film through low-temperature deposition.

Description

Bolometer element, method for manufacturing the same, and infrared detection element including the same

[0001] According to embodiments of the present invention, the present invention relates to a bolometer element, a method for manufacturing the same, and an infrared detection element including the same.

[0002] A bolometer is an infrared detector. It detects changes in infrared radiation by utilizing the sensor's electrical resistance, which changes as a result of temperature rise caused by infrared absorption. Because a bolometer detects changes relative to a reference resistance, it is crucial to secure an infrared-sensitive material with a high temperature coefficient of resistance (TCR).

[0003] Some materials for bolometers use metals such as titanium (Ti), but other materials include amorphous silicon (a-Si) and vanadium oxide (VO), a type of metal oxide. x ) has been mainly used. The most widely used material is vanadium oxide (VO x ) has a high TCR value of about -2 % / K and low resistivity, but there are countless intermediate states such as VO2, V2O3, and V2O5. That is, it undergoes a state change from an insulator or semiconductor to a metallic state at a specific temperature, making it difficult to achieve reproducibility, and therefore requires a sophisticated process. In addition, expensive special equipment such as an ion beam sputtering device and a growth temperature of 500 ℃ or higher are required for stable thin film deposition.

[0004] Typically, bolometers capable of operating over a wide temperature range have a low TCR of approximately 1% to 2%, and bolometer devices with high TCRs can only operate within a specific temperature range. Even if these shortcomings are addressed, the manufacturing process of bolometer devices, which involves a high growth temperature deposition process, presents challenges in the actual bolometer manufacturing process due to factors such as silicon oxidation and damage to chemical polymer materials.

[0005] The present invention provides a method for manufacturing a bolometer element, which can design and manufacture an optimized bolometer capable of achieving high performance over a wide temperature range, in order to solve the mentioned problems.

[0006] The present invention can provide a bolometer element capable of achieving high performance over a wide temperature range.

[0007] The present invention can provide an infrared sensing element including a bolometer element according to the present invention.

[0008] However, the problems to be solved by the present invention are not limited to those mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the description below.

[0009] A method for manufacturing a bolometer element according to embodiments of the present invention includes: a step of calculating an optimized value of a heterostructure thin film using an artificial intelligence (AI) reverse engineering method; a step of setting an optimized heterostructure thin film based on the optimized value; and a step of manufacturing a dual-structure thin film set by a low-temperature deposition process; wherein the step of calculating the optimized value includes: a step of designing a sample model of the heterostructure thin film; a step of obtaining parameter values ​​of a unit layer of the heterostructure thin film; and a step of calculating an optimized value by substituting parameter values ​​of the unit layer corresponding to the sample model; wherein the heterostructure thin film may include multiple resistive material layers, and the multiple resistive material layers may include unit layers having different TCR values.

[0010] According to one embodiment, the unit layer is a single layer of multiple resistive material layers, and the unit layer may be classified according to the type of oxide-based resistive material, the dopant content, or both.

[0011] In one embodiment, the sample model may include multiple resistive material layers composed of different unit layers, and may be designed to approximate the parallel resistance of the multiple resistive material layers.

[0012] According to one embodiment, in the step of obtaining the parameter value of the unit layer, the parameter value is a resistance value (R) of the unit layer (i). i ), TCR value, resistivity value (ρ i ) and thickness (t i ) is the data, and the resistance value (R) according to the temperature of the unit layer (i) i ) and thickness (t i ) is obtained by Equation 1(R i =ρ i xt i ) and substitute it into the resistivity value (ρ i ) may be produced.

[0013] In one embodiment, the optimized value is a parameter that provides the highest TCR value, and the optimized value may be calculated in a manner that AI optimizes the TCR integral value to determine whether a flat region is formed in some temperature range of the TCR graph for temperature.

[0014] According to one embodiment, the step of calculating the optimized value may include: calculating a synthetic resistance according to Equation 1; and calculating a thickness of an optimized thin film using the synthetic resistance.

[0015] [Formula 1]

[0016]

[0017] (In Equation 1, the resistivity value (ρ i ) and thickness (t i ))

[0018] According to one embodiment, the step of calculating the thickness of the optimized thin film may be a reverse design method utilizing a reinforcement learning method based on the synthetic resistance, wherein the optimal thickness of each unit layer is determined, and the thickness may provide an optimized thickness ratio that provides a maximum TCR value in a broadband temperature in a sample model composed of resistive material layers having different dopant contents.

[0019] According to one embodiment, the step of setting an optimized heterostructure thin film based on the optimized value may be to set the heterostructure thin film by introducing the optimized value into the sample model.

[0020] According to one embodiment, the step of manufacturing the double-structured thin film may use a pulsed laser deposition (PLD) deposition method, a sputter deposition method, or both.

[0021] According to one embodiment, in the step of manufacturing the double-structured thin film, the growth temperature may be from room temperature to 300°C.

[0022] According to embodiments, a bolometer device of the present invention includes: a semiconductor substrate; and a heterostructure thin film layer on the semiconductor substrate; wherein the heterostructure thin film layer may include multiple resistive material layers, each layer having a different TCR (Temperature coefficient of Resistance; % / K) value.

[0023] According to one embodiment, the heterostructure thin film layer may include multiple resistive material layers; and a buffer layer between each resistive material layer; wherein the buffer layer includes an oxide, and the resistive material layer may include 0% to 5% tungsten-doped vanadium oxide (W-doped VO2).

[0024] According to one embodiment, the thickness of the resistive material layer may be 20 nm (nanometers) to 100 nm (nanometers), and the thickness of the buffer layer may be 10 nm (nanometers) to 100 nm (nanometers).

[0025] In one embodiment, each layer of the multi-resistive material layer may have the same or different W doping contents, and some of the multi-resistive material layers may be arranged such that the tungsten (W) doping contents tend to increase or decrease from the lower layer to the upper layer.

[0026] In one embodiment, the multi-resistive material layer comprises 0% to 0.5% W-doped VO2. Resistive material layer (A); containing 0.5% to 1% of W-doped VO2 Resistive material layer (B); containing 1% to 2% W-doped VO2 a resistive material layer (C); and 2% to 4% of W-doped VO2. It may include a resistive material layer (D).

[0027] According to one embodiment, the multi-resistive material layer may be laminated as resistive material layer (A) / resistive material layer (C) / resistive material layer (B) / resistive material layer (D).

[0028] According to one embodiment, the thickness ratio of the resistive material layer (A) to one of the remaining resistive material layers may be 7:7 to 25.

[0029] According to one embodiment, the thickness ratio of the resistive material layer (A) to the resistive material layer (B) may be 7:20 to 22, the thickness ratio of the resistive material layer (A) to the resistive material layer (C) may be 7:7 to 8, and the thickness ratio of the resistive material layer (A) to the resistive material layer (D) may be 7:9 to 11.

[0030] In one embodiment, the TCR of the bolometer element may be greater than or equal to 2.1%.

[0031] In one embodiment, the bolometer element may have a flat shape in some temperature range of the TCR graph for 280 K to 400 K, and the interval of the some temperature ranges may be 10 K or more.

[0032] According to one embodiment, the bolometer element may be manufactured by a method for manufacturing a bolometer element according to embodiments of the present invention.

[0033] According to embodiments, the infrared sensing element of the present invention may include a bolometer element according to embodiments of the present invention.

[0034] The present invention can provide a method for manufacturing a bolometer element, which can manufacture a bolometer element on a silicon wafer element (e.g., using a low-temperature deposition process) and commercialize a bolometer that can exhibit high performance over a wide temperature range in actual industry.

[0035] The present invention can provide a bolometer element that can realize a wide operating temperature range and a high TCR (Temperature coefficient of Resistance) by forming a multilayer heterostructure of materials having resistance characteristics according to different temperatures.

[0036] The present invention can provide a manufacturing method capable of manufacturing a bolometer element having a TCR of about 4% to 5% or more over a wide range that was difficult to implement in the prior art, and commercializing the same.

[0037] The present invention enables the production of a bolometer element through a low-temperature deposition process (e.g., about 300°C), optimization of each layer of a hetero-thin film structure through artificial intelligence, and provision of a bolometer element having a high TCR over a wide temperature range, and a sensor device utilizing the same (e.g., an infrared detection element).

[0038] FIG. 1 is a flowchart of a method for manufacturing a bolometer element of the present invention according to embodiments of the present invention.

[0039] FIG. 2 is an exemplary diagram illustrating a process of calculating an optimized value of an oxide heterostructure thin film using an artificial intelligence reverse engineering method in a method for manufacturing a bolometer device according to embodiments of the present invention.

[0040] Figure 3a shows the measurement results of the resistance of each unit layer of the oxide heterostructure thin film in the process of Figure 2.

[0041] Figure 3b shows the measurement results of the TCR of each unit layer of the oxide heterostructure thin film in the process of Figure 2.

[0042] Figure 4a shows the calculation result (resistance) of the thickness ratio of an oxide heterostructure thin film having an optimized TCR value through the process of Figure 2.

[0043] Figure 4b shows the calculation result of the thickness ratio (TCR) of the oxide heterostructure thin film having the optimized TCR value through the process of Figure 2.

[0044] FIG. 5 is an exemplary diagram showing the configuration of a multilayer heterostructure thin film of a bolometer device according to embodiments of the present invention.

[0045] FIG. 6 exemplarily illustrates the configuration of a PLD deposition device according to embodiments of the present invention.

[0046] FIG. 7a shows the resistance measurement results of a bolometer element manufactured by PLD low-temperature deposition in Example 1, according to one embodiment.

[0047] FIG. 7b shows the TCR measurement results of a bolometer element manufactured by PLD low-temperature deposition in Example 1, according to one embodiment.

[0048] Figure 8a shows the resistance measurement results of the bolometer element manufactured in Comparative Example 1, according to one embodiment.

[0049] Figure 8b shows the resistance measurement results of the bolometer element manufactured in Comparative Example 2, according to one embodiment. The inset corresponds to TCR.

[0050] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. In describing the present invention, detailed descriptions of related known functions or configurations will be omitted if it is determined that such detailed descriptions may unnecessarily obscure the gist of the present invention. In addition, the terms used in this specification are terms used to appropriately express preferred embodiments of the present invention, and may vary depending on the intention of the user or operator, or the customs of the field to which the present invention belongs. Therefore, the definitions of these terms should be determined based on the contents throughout this specification. The same reference numerals presented in each drawing represent the same elements.

[0051] Throughout the specification, when we say that an element is "on" another element, this includes not only cases where the element is in contact with the other element, but also cases where another element exists between the two elements.

[0052] Throughout the specification, when a part is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components.

[0053] In this document, phrases such as "A or B", "at least one of A and B", "at least one of A or B", "A, B, or C", "at least one of A, B, and C", and "at least one of A, B, or C" can each include any one of the items listed together with the corresponding phrase, or all possible combinations thereof. Terms such as "first", "second", or "first" or "second" may be used merely to distinguish the corresponding element from other corresponding elements and do not limit the corresponding elements in any other respect (e.g., importance or order). For example, suitable results may be achieved even if the described techniques are performed in a different order than the described method, and / or the described elements are combined or combined in a different form than the described method, or are replaced or substituted by other elements or equivalents. Therefore, other implementations, other embodiments, and equivalents of the claims are also within the scope of the following claims.

[0054] Hereinafter, the bolometer element of the present invention, its manufacturing method, and its utilization will be described in detail with reference to examples and drawings. However, the present invention is not limited to these examples and drawings.

[0055] According to one embodiment, the bolometer element of the present invention may include a semiconductor substrate; and a heterostructure thin film layer on the semiconductor substrate. According to one embodiment, the semiconductor substrate may be applied without limitation as long as it is applicable to the bolometer element, and may be, for example, a Si substrate, a sapphire substrate, a wafer, a SiO2 substrate, etc., but is not limited thereto.

[0056] According to one embodiment, a buffer layer may be further included on the semiconductor substrate, and the buffer layer may be disposed between the substrate and the heterostructure thin film layer, and may include a material capable of enhancing the crystallinity of a resistive material (e.g., an oxide-based resistive material) of the heterostructure thin film layer. Preferably, TiO X (e.g. TiO2) may be included.

[0057] According to one embodiment, the heterostructure thin film layer includes a multi-resistive material layer, and the multi-resistive material layer is formed by stacking a plurality of resistive material layers having different TCR (Temperature coefficient of Resistance; % / K) values, which can implement a heterostructure thin film layer.

[0058] According to one embodiment, the heterostructure thin film layer may include an oxide or doped oxide applicable as a resistive material layer. The resistive material layer may be a thin film having a resistance change according to a temperature change due to absorption of infrared rays. For example, vanadium oxide (VO X ) or doped vanadium oxide (e.g. W y VO 2-y ) may include vanadium oxide (VO X) phase may be VO2, V2O3 and V2O5, etc. The dopant may include tungsten (W). The content of the dopant may be selected from 0% to 5%; 0.1% to 4%; 0.2% to 4%; 0.5% to 4%; 1% to 3%; or 1% to 2%. Preferably, the resistive material is 0% to 5% of tungsten-doped vanadium oxide (W-doped VO x )(e.g. W-doped VO2).

[0059] In one embodiment, each layer of the multi-resistive material layer may have the same or different doping contents. In one embodiment, at least a portion of the multi-resistive material layers may be arranged such that the doping contents tend to increase or decrease from the lower layer to the upper layer. For example, when applying a resistive material layer of 0% to 4% W-doped VO2, the tungsten (W) doping contents may decrease from the lower layer to the upper layer.

[0060] In one embodiment, the multi-resistive material layer can control the configuration (e.g., stacking arrangement) of the resistive material layer based on at least one or a combination of the resistive material composition, doping content, and thickness to improve the performance (e.g., TCR) of the bolometer device. In one embodiment, the multi-resistive material layer includes W-doped VO2 of 0% or more (or, more than) and 0.5% or less. A resistive material layer (A); comprising W-doped VO2 of 0.5% or more (or, exceeding) and 1% or less (or, less). A resistive material layer (B); comprising 1% or more (or, exceeding) and 2% or less (or, less) of W-doped VO2. A resistive material layer (C); and comprising 2% or more (or, exceeding) and 4% or less (or, less) of W-doped VO2. A resistive material layer (D) may be included. The resistive material layer (A), the resistive material layer (B), the resistive material layer (C), and the resistive material layer (D) may control the stacking order in the multiple resistive material layers to improve the performance (e.g., TCR) of the bolometer element. For example, the resistive material layer (A), the resistive material layer (B), the resistive material layer (C); and the resistive material layer (D) may each be configured as a single layer or multiple layers. Preferably, it may be a single layer. For example, the resistive material layer (A), the resistive material layer (B), the resistive material layer (C); and the resistive material layer (D) may have doping contents that overlap or differ from each other. That is, when they overlap, the thicknesses may be different.

[0061] For example, the resistive material layer (A), the resistive material layer (B), the resistive material layer (C); and the resistive material layer (D) may be arranged in that order. For example, some of the multiple resistive material layers may be arranged such that the doping content tends to increase from the bottom to the top. Preferably, the stacking order may include resistive material layer (A) / resistive material layer (C) (upper / lower), resistive material layer (B) / resistive material layer (D) (upper / lower), or both.

[0062] In one embodiment, the thickness of the multi-resistive material layer may be 20 nm to 100 nm; 20 nm to 80 nm; 20 nm to 60 nm; 20 nm to 50 nm; 30 nm to 40 nm; or 35 nm to 38 nm. In one embodiment, the thickness of each resistive material layer of the multi-resistive material layer may be 1 nm to 25 nm; 1 nm to 15 nm; 2 nm to 13 nm; 3 nm to 12 nm; or 4 nm to 12 nm. For example, the resistive material layer D(W 0.04 V 99.96 O2, W: 4%) / Resistance material layer B (W 0.005 V 99.995 O2, W: 0.5%) / Resistance coating layer C(W 0.02 V 99.98O2, W: 2%) / Resistance material layer A (VO 2, W: 0%), it can be about 5.72 nm / about 11.95 nm / about 4.03 nm / about 4.01 nm, respectively. The performance of the bolometer can be improved by controlling the thickness or thickness ratio of each resistive material layer in the multi-resistive material layer. According to one embodiment, an optimized thickness ratio of the multi-resistive material layer can be provided depending on the dopant content of the resistive material layer. According to one embodiment, the thickness ratio of the resistive material layer (A) to one of the remaining resistive material layers can be 7:7 to 25; 7:7 to 22; 7:7 to 22; 7:7 to 20; 7:7 to 18; 7:7 to 15; 7:7 to 12; 7:7 to 10; 7:18 to 22; or 7:19 to 22. According to one embodiment, the thickness ratio of the resistive material layer (A) to the resistive material layer (B) may be 7:20 to 22, the thickness ratio of the resistive material layer (A) to the resistive material layer (C) may be 7:7 to 8, and the thickness ratio of the resistive material layer (A) to the resistive material layer (D) may be 7:9 to 11.

[0063] In one embodiment, in the case of resistive material layer (A) / resistive material layer (C) / resistive material layer (B) / resistive material layer (D) (upper / lower), the thickness ratio of the resistive material layer (A) to the resistive material layer (B) may be 7:20 to 22, the thickness ratio of the resistive material layer (A) to the resistive material layer (C) may be 7:7 to 8, and the thickness ratio of the resistive material layer (A) to the resistive material layer (D) may be 7:9 to 11. For example, the multiple resistive material layers may correspond to the configuration of the bolometer element presented in FIG. 5.

[0064] According to one embodiment, by controlling the composition (e.g., dopant content), stacking order, and thickness (or thickness ratio) of the multi-resistive material layer, low-temperature (e.g., growth temperature: about room temperature (RT) to 300°C) deposition is possible, and the performance of the bolometer (e.g., improvement of the TCR value) can be improved. In addition, the multi-resistive material layer can be designed according to the desired broadband operating range and TCR value of the bolometer element. For example, the bolometer element can be formed by depositing a heterostructure oxide-based resistive material layer by a sputtering or pulsed laser deposition (PLD) method. That is, a bolometer element can be manufactured on a silicon wafer by such low-temperature deposition, and a bolometer capable of performing high performance in a broadband temperature range utilized in actual industries can be provided.

[0065] According to one embodiment, a buffer layer may be included between the resistive material layers to prevent the multiple resistive material layers from mixing or overlapping with each other. For example, the buffer layer may be an oxide thin film and may include a material that can enhance the crystallinity of the resistive material (e.g., an oxide-based resistive material). Preferably, the buffer layer may include TiOx (e.g., TiO2). For example, the thickness of the buffer layer may be 10 nm to 100 nm; 20 nm to 100 nm; 20 nm to 80 nm; 20 nm to 50 nm; 20 nm to 40 nm; 20 nm to 30 nm; or 25 nm to 30 nm. By applying the mentioned thickness range, the resistive material layers are prevented from mixing, thereby reducing or preventing the occurrence of mixed TCR of the resistive material layers, providing a single TCR by a single material of the resistive material layer, and preventing the degradation of the TCR of the multiple resistive material layers.

[0066] In one embodiment, the TCR of the bolometer element may be 2.1% or more; 3% or more; 4% or more; 5% or more; preferably 3% to 5%, and more preferably 3% to 4%.

[0067] In one embodiment, the bolometer element may have a TCR graph for a temperature range from 280 K to 400 K that may include a flat graph region in which the TCR value is constant or has little change in some temperature intervals. For example, the intervals of the some temperature intervals may be 8 K or more; 10 K or more; 12 K or more; 13 K or more, or between 10 K and 13 K (e.g., the TCR graphs of FIGS. 7A and 7B ). In one embodiment, the bolometer element may have a TCR graph for a temperature range from 280 K to 400 K that may be a graph having a linear decreasing trend from 280 K to a temperature where the flat shape begins (e.g., the TCR graphs of FIGS. 7A and 7B ).

[0068] According to one embodiment, the bolometer element of the present invention may be applied to an infrared sensing element. According to one embodiment, the infrared sensing element may be a sensor that detects changes in infrared radiation by using a bolometer thin film (e.g., a heterostructure thin film layer) whose resistance changes according to temperature changes due to absorption of infrared radiation.

[0069] According to one embodiment, the infrared sensing element can remotely image the temperature distribution of a target object using a microbolometer array. That is, when far-infrared rays (e.g., far-infrared rays in the range of about 8 μm to about 14 μm) that are radiated like a black body from all objects are focused onto a bolometer (e.g., a microbolometer) using a lens, the temperature of the bolometer increases and decreases. According to this temperature change, a change in the electrical resistance of the bolometer can be indicated, and a temperature image of the target object can be generated.

[0070] According to one embodiment, the bolometer device of the present invention can be designed with an optimized heterostructure of an oxide thin film for a bolometer using an artificial intelligence reverse engineering method. In addition, a bolometer device with an optimized dual structure having desired characteristics (e.g., a high TCR value in a broadband temperature range) can be manufactured.

[0071] According to one embodiment, with reference to FIGS. 1 and 2, FIG. 1 exemplarily illustrates a flow of a method for manufacturing a bolometer element according to embodiments of the present invention. FIG. 2 exemplarily illustrates a process of a method for manufacturing a bolometer element according to embodiments of the present invention.

[0072] Referring to FIG. 1, a method for manufacturing a bolometer element may include a step (100) of calculating an optimized value of a heterostructure thin film using an artificial intelligence (AI) reverse engineering method; a step (200) of setting a heterostructure thin film based on the optimized value; and a step (300) of manufacturing a set dual-structure thin film using a low-temperature deposition process.

[0073] According to one embodiment, the step (100) of calculating an optimized value includes designing a sample model of a heterostructure thin film, calculating an optimized value that provides an optimal TCR value using an artificial intelligence (AI) reverse engineering method, and calculating the optimized value by calculating a value of an optimized component that provides an optimal TCR value in the sample model, and inputting the value into the sample model to set the heterostructure thin film. That is, a bolometer device (e.g., FIG. 5) according to embodiments of the present invention can be implemented using a method for manufacturing a bolometer device.

[0074] According to one embodiment, the bolometer element may include multiple resistive material layers, and the multiple resistive material layers may include unit layers having different TCR values. The unit layer refers to the minimum layer for parameter measurement applied to derive the optimized value of the present invention, and may correspond to, for example, a single layer (i.e., one resistive material layer) among the multiple resistive material layers. The unit layer may be classified according to the type of resistive material (e.g., oxide-based resistive material), the dopant content (e.g., dopant content of the oxide-based resistive material), or both.

[0075] According to one embodiment, the step (100) of calculating an optimized value may include a step (110) of designing a sample model of a heterogeneous thin film, a step (120) of obtaining parameter values ​​of a unit layer of the heterogeneous thin film, and a step (130) of calculating an optimized value by substituting parameter values ​​of a unit layer corresponding to the sample model.

[0076] According to one embodiment, in the step (110) of designing a sample model, the sample model may be used to design a basic configuration of a multi-resistive material layer and to derive an optimized value according to this basic configuration. The sample model may be designed singly or in multiples to implement a bolometer device having a desired performance depending on the application field or operating range of the bolometer device. For example, as shown in FIG. 2, the sample model may be a heterogeneous thin film composed of different unit layers, including a multi-resistive material layer, and designed by approximating the parallel resistance of the multi-resistive material layer.

[0077] According to one embodiment, in the sample model, the unit layer is a single layer of multiple resistive material layers, and the unit layers can be classified according to the type of oxide-based resistive material, the dopant content, or both, and preferably, can be classified according to the dopant content in the same resistive material (e.g., FIG. 2).

[0078] According to one embodiment, the step (120) of obtaining parameter values ​​is to obtain parameter values ​​of a unit layer configured in the sample model (e.g., FIG. 2), wherein the parameter values ​​are resistance values ​​(R) of the unit layer (i). i ), TCR value, resistivity value (ρ i ) and thickness (t i ) is to measure data such as (R i =ρ i xt i ) is applied to Equation 1, and Equation 1(R) is used to produce the optimized value. i =ρ i xt i ) can be substituted to derive parameter values. For example, the resistance value (R) according to the temperature of the unit layer (i) i ) and thickness (t i ) is obtained by Equation 1(R i =ρ i xt i ) and substitute it into the resistivity value (ρ i ) can be produced. For example, as shown in FIGS. 3a and 3b, the resistance value and TCR data, which are parameter values ​​of a unit layer (i.e., a unit layer classified according to dopant content) in the sample model of FIG. 2, can be measured and utilized in the above process.

[0079] According to one embodiment, the step (130) of calculating an optimized value may calculate an optimized value that provides the highest TCR value in the basic configuration of the sample model (Fig. 2). In addition, the optimized value may be calculated by AI-optimizing the TCR integral value to determine whether a flat region is formed in some temperature range of the TCR graph for temperature while having the highest TCR value. For example, the step (130) of calculating an optimized value may include the step (131) of calculating a synthetic resistance according to Equation 1; and the step (132) of calculating the thickness of an optimized thin film using the synthetic resistance. That is, in the step (110) of designing a sample model, a heterogeneous multi-resistive material layer composed of unit layers classified by dopant content in a resistive material may be designed as a sample model, and the optimized thickness of each unit layer of the multi-resistive material layer may be calculated. As a result, a bolometer element having an optimized double-structure thin film may be provided.

[0080] [Formula 1]

[0081]

[0082] In equation 1, the resistivity value (ρ i ) and thickness (t i ) and this can be changed depending on the type of resistive material.)

[0083] According to one embodiment, the step (132) of calculating the thickness of the optimized thin film may determine the optimal thickness of each unit layer by a reverse design method utilizing a reinforcement learning method based on the synthetic resistance (e.g., FIG. 2). Each unit layer of the thin film may obtain resistance data in a single thin film state and may be replaced with resistivity data for each material. The synthetic resistance according to Equation 2 is calculated by a method of obtaining the synthetic resistance when each layer is connected in parallel, and the optimal thickness of each layer may be determined by a reverse design method utilizing a reinforcement learning method. Through this, a material having desired characteristics (e.g., a wide operating range and high TCR) may be designed. The thickness may provide an optimized thickness ratio that provides the maximum TCR value in a broadband temperature in a sample model composed of resistive material layers with different dopant contents. For example, in Figs. 4a and 4b, the thickness ratio (7 (W 0%): 21 (W 0.5%): 7 (W 2%): 10 (W 4%)) of the heterostructure thin film having a resistance and flat area and providing a high TCR (about 4% to 5%) (b) can be calculated.

[0084] According to one embodiment, the step (200) of setting an optimized heterostructure thin film based on an optimized value may set a heterostructure thin film having an optimized structure by introducing an optimized value (e.g., a thickness ratio according to a dopant content) into the sample model. According to one embodiment, FIG. 5 illustrates a configuration of an optimized bolometer element according to embodiments of the present invention, in which a tungsten oxide thin film having different TCR values ​​according to a tungsten dopant content is configured, and a bolometer element having a high TCR value and a TCR having a flat region in a wide range according to temperature can be designed.

[0085] According to one embodiment, the step (300) of manufacturing a double-structured thin film can implement an actual parameter device by performing low-temperature growth using a pulsed laser deposition (PLD) deposition method at a temperature of 300°C or less.

[0086] Example

[0087] Example 1

[0088] The bolometer elements designed using the artificial intelligence (AI) reverse engineering method according to FIGS. 1 to 3a and 3b were fabricated on a silicon substrate using pulsed laser deposition (PLD) as presented in FIG. 6. The growth temperature was 300°C, and the material used was tungsten-doped vanadium oxide, which was separated by a TiO2 layer to minimize interference between each layer. The resistance and TCR of the fabricated bolometer elements were measured and are shown in FIGS. 7a and 7b.

[0089] In Figures 7a and 7b, a TCR graph can be seen that is flat in the 13.3 k range and has a linear trend up to the low-temperature region.

[0090] Comparative Example 1

[0091] A sample in which vanadium oxide was deposited on a silicon substrate without a TiO2 layer (growth temperature: 300 ℃) was prepared in the same manner as in Example 1.

[0092] Comparative Example 2

[0093] The same procedure as Example 1 was followed except that a growth temperature of 600°C was applied.

[0094] The resistance of the bolometer elements of Comparative Examples 1 and 2 was measured and shown in Fig. 8. Comparative Example 1 exhibits severe interference between layers due to the mixing of vanadium oxide films, resulting in uneven resistance. Comparative Example 2 uses a higher temperature than Example 1, but it can be confirmed that Example 1 can design a bolometer element with a high TCR value at a much lower temperature than Comparative Example 2 by using an artificial intelligence (AI) reverse design method.

[0095] The present invention utilizes an artificial intelligence (AI) reverse engineering method to design an optimized bolometer element, thereby providing a bolometer element with a TCR that has a flat region over a wide range. Furthermore, the present invention can provide a bolometer element with an optimized TCR by diversifying the resistive material of the bolometer element, not just vanadium oxide.

[0096] Although the embodiments described above have been described with limited examples and drawings, those skilled in the art will recognize that various modifications and variations are possible based on the above teachings. For example, appropriate results can be achieved even if the described techniques are performed in a different order than described, and / or the described components are combined or combined in a different manner than described, or are replaced or substituted with other components or equivalents. Therefore, other implementations, other embodiments, and equivalents of the claims also fall within the scope of the claims described below.

Claims

1. A step of calculating the optimized value of a heterogeneous structure thin film using an artificial intelligence (AI) reverse engineering method; A step of setting an optimized heterostructure thin film based on the above optimized value; and A step of manufacturing a double-structured thin film set by a low-temperature deposition process; Including, The step of calculating the above optimized value is: Step of designing a sample model of a heterostructure thin film; A step of obtaining parameter values ​​of a unit layer of the heterostructure thin film; and A step of calculating an optimized value by substituting the parameter values ​​of the unit layer corresponding to the above sample model; Including, The above heterostructure thin film includes multiple resistive material layers, The above multi-resistance material layer includes unit layers having different TCR (Temperature Coefficient of Resistance) values. Method for manufacturing a bolometer element.

2. In paragraph 1, The above unit layer is a single layer of multiple resistive material layers, A method for manufacturing a bolometer element, wherein the above unit layer is classified according to the type of oxide-based resistive material, dopant content, or both.

3. In paragraph 1, The above sample model is, Contains multiple resistive material layers composed of different unit layers, A method for manufacturing a bolometer element, which is designed by approximating the parallel resistance of the above multi-resistive material layer.

4. In paragraph 1, In the step of obtaining the parameter value of the above unit layer, the parameter value is the resistance value (R) of the unit layer (i). i ), TCR value, resistivity value (ρ i ) and thickness (t i ) and, Resistance (R) according to temperature of unit layer (i) i ) and thickness (t i ) After obtaining the data, Equation 1(R i =ρ i xt i ) and substitute it into the resistivity value (ρ i ) for producing a bolometer element.

5. In paragraph 1, The above optimized values ​​are the parameters that provide the highest TCR value, The above optimized value is a method for manufacturing a bolometer element, wherein the TCR integral value is calculated by AI optimization compensation to determine whether a flat region is formed in some temperature range of the TCR graph for temperature.

6. In paragraph 1, The step of calculating the above optimized value is: A step of calculating a synthetic resistance according to Equation 1; and A step of calculating the optimized thickness of the thin film using the above synthetic resistance; A method for manufacturing a bolometer element, comprising: [Formula 1] (In Equation 2, the resistivity value (ρ i ) and thickness (t i )) 7. In paragraph 6, The step of calculating the thickness of the above optimized thin film is: Based on the above synthetic resistance, a reverse design method utilizing reinforcement learning is used to determine the optimal thickness of each unit layer. A method for manufacturing a bolometer element, wherein the above thickness provides an optimized thickness ratio that provides a maximum TCR value in a broadband temperature range in a sample model composed of resistive material layers with different dopant contents.

8. In paragraph 1, The step of setting the optimized heterostructure thin film based on the above optimized value is: A method for manufacturing a bolometer element, wherein a heterostructure thin film is set by introducing optimized values ​​into the above sample model.

9. In paragraph 1, The step of manufacturing the above double-structured thin film is: A method for manufacturing a bolometer element using a PLD (pulsed laser deposition) deposition method, a sputter deposition method, or both.

10. In paragraph 9, A method for manufacturing a bolometer element, wherein the growth temperature in the step of manufacturing the above double-structured thin film is room temperature to 300°C.

11. Semiconductor substrate; and A heterogeneous thin film layer on the semiconductor substrate; Including, A bolometer element, wherein the heterogeneous thin film layer includes multiple resistive material layers, each layer having a different TCR (Temperature coefficient of Resistance; % / K) value.

12. In paragraph 11, The above heterogeneous structure thin film layer is, Multiple resistive material layers; and a buffer layer between each resistive material layer; Including, The above buffer layer contains an oxide, The above resistive material layer comprises 0% to 5% of tungsten-doped vanadium oxide (W-doped VO2). Bolometer element.

13. In paragraph 12, The thickness of the above resistive material layer is 20 nm to 100 nm, A bolometer element, wherein the thickness of the buffer layer is 10 nm to 100 nm.

14. In paragraph 11, Each layer of the above multi-resistive material layer has the same or different W doping content, A bolometer element, wherein some of the above multi-resistive material layers are arranged so that the tungsten (W) doping content tends to increase or decrease from the lower layer to the upper layer.

15. In paragraph 11, The above multi-resistance material layer is, Containing 0% to 0.5% W-doped VO2 Resistive material layer (A); Containing 0.5% to 1% W-doped VO2 Resistive material layer (B); Containing 1% to 2% W-doped VO2 resistive material layer (C); and Containing 2% to 4% W-doped VO2 resistive material layer (D) A bolometer element comprising:

16. In paragraph 15, The above multi-resistance material layer is, A bolometer element laminated with resistive material layer (A) / resistive material layer (C) / resistive material layer (B) / resistive material layer (D).

17. In paragraph 15, A bolometer element, wherein the thickness ratio of the resistive material layer (A) to one of the remaining resistive material layers is 7:7 to 25.

18. In paragraph 15, The thickness ratio of the resistive material layer (A) to the resistive material layer (B) is 7:20 to 22, The thickness ratio of the resistive material layer (A) to the resistive material layer (C) is 7:7 to 8, A bolometer element, wherein the thickness ratio of the resistive material layer (A) to the resistive material layer (D) is 7:9 to 11.

19. In paragraph 11, A bolometer element, wherein the TCR of the above bolometer element is 2.1% or more.

20. In paragraph 11, The above bolometer element, It has a flat shape in some temperature ranges of the TCR graph for 280 K to 400 K, A bolometer element, wherein the interval between the above temperature ranges is 10 K or more.

21. In paragraph 11, The above bolometer element is a bolometer element manufactured by the manufacturing method of the bolometer element of claim 1.

22. Bolometer element of paragraph 11; An infrared sensing element comprising:

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