Separation device and holding method

Abstract

This separation device performs separation with respect to a multilayer substrate in which a first substrate and a second substrate are joined. With respect to a holding jig that has a dicing frame which has an opening and dicing tape which is fixed to the dicing frame so as to cover the opening, the multilayer substrate is affixed to the dicing tape by being disposed in the opening. The separation device has a holding part that holds the multilayer substrate by suctioning the dicing tape of the holding jig. The holding part includes a center region and an outer peripheral region that is divided from the center region and that surrounds the center region from the outside. The holding part applies a suction pressure, which is for suctioning the dicing tape, to each of the center region and the outer peripheral region.

Description

Peeling device and holding method

[0001] The present disclosure relates to a stripping device and a holding method.

[0002] Conventionally, there have been known peeling devices that peel off two substrates (a substrate to be processed and a support substrate) that constitute a laminated substrate. For example, Patent Document 1 discloses a peeling device that peels off a laminated substrate held by a holding jig having a dicing frame and a dicing tape. During peeling, this peeling device adsorbs the dicing tape that overlaps the laminated substrate using a first holding part on the lower side, and presses the dicing frame downward in the vertical direction.

[0003] The peeling device then forms a notch by inserting a blade between the two substrates, and the peeling device moves the multiple suction and movement parts of the upper second holding part downward to suck the support substrate, and then lifts the support substrate from the suction and movement part on the blade's entry side, thereby separating the substrate to be processed and the support substrate.

[0004] JP 2015-207776 A

[0005] The present disclosure provides a technique that can stably adsorb a laminated substrate held by a holding jig.

[0006] According to one aspect of the present disclosure, there is provided a peeling device that peels off an overlapped substrate formed by bonding a first substrate and a second substrate, wherein the overlapped substrate is attached to the dicing tape by being placed in the opening of a holding jig having a dicing frame with an opening and a dicing tape fixed to the dicing frame so as to cover the opening, and the holding jig has a holding portion that adsorbs the dicing tape to hold the overlapped substrate, the holding portion including a central region and a peripheral region that is partitioned relative to the central region and circumferentially surrounds the outside of the central region, and the peeling device applies an adsorption pressure to adsorb the dicing tape in each of the central region and the peripheral region.

[0007] According to one aspect, the laminated substrate held by the holding jig can be suctioned stably.

[0008] FIG. 3(B) is a plan view showing a schematic configuration of a transfer station of the delamination system according to an embodiment; FIG. 3(A) is a side view showing a cross-sectional side view of a laminated substrate, a dicing frame, and a dicing tape; FIG. 3(B) is a plan view showing a laminated substrate, a dicing frame, and a dicing tape; FIG. 3(B) is a partial cross-sectional side view showing a schematic configuration of a delamination device according to an embodiment; FIG. 3(A) is a plan view showing a support member, an upper suction group, and a blade; FIG. 6(A) is a first view showing a procedure for delaminating an overlapped wafer; FIG. 6(B) is a second view showing a procedure for delaminating an overlapped wafer; FIG. 6(C) is a third view showing a procedure for delaminating an overlapped wafer; FIG. 6(D) is a fourth view showing a procedure for delaminating an overlapped wafer; FIG. 7(A) is an enlarged cross-sectional view of a dicing tape and an overlapped wafer in which bubbles have occurred; FIG. 7(B) is a view showing a state in which a dicing tape having bubbles is placed on a lower chuck according to a reference example; FIG. 8(A) is a perspective view showing a lower chuck according to the first embodiment. Fig. 8(B) is an enlarged cross-sectional view showing the lower chuck according to the first embodiment. Fig. 8(B) is a flowchart showing a peeling method including a holding method according to an embodiment. Fig. 8(B) is a cross-sectional view showing the adsorption of a dicing tape by the lower chuck. Fig. 11(A) is a perspective view showing a lower chuck according to a second embodiment. Fig. 11(B) is an enlarged cross-sectional view showing the lower chuck according to the second embodiment. Fig. 11(B) is a cross-sectional view showing a holding jig, an overlapping wafer, and a lower chuck with a dicing frame pressed down.

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted. Note that the X-axis, Y-axis, and Z-axis directions used in the following description are axes that intersect perpendicularly with each other, the X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical.

[0010] <Configuration of Delamination System 100> First, the configuration of a delamination system 100 according to an embodiment of the present disclosure will be described with reference to Figures 1 and 2. The delamination system 100 includes a delamination device 7 that delaminates a laminated substrate T formed by bonding a first substrate W1 and a second substrate W2 together. The delamination system 100 is configured as a system that loads the laminated substrate T into the delamination device 7, delaminates the laminated substrate T in the delamination device 7, and then loads each of the delaminated first substrate W1 and second substrate W2 out of the delamination device 7.

[0011] The first substrate W1 and the second substrate W2 constituting the overlapped substrate T are formed as circular plates of approximately the same shape (same diameter). Hereinafter, as shown in FIG. 3A , the first substrate W1 may be referred to as the "upper wafer W1," the second substrate W2 as the "lower wafer W2," and the overlapped substrate T as the "overlapped wafer T." Hereinafter, the surface of the upper wafer W1 that is bonded to the lower wafer W2 will be referred to as the "bonding surface W1j," and the surface opposite the bonding surface W1j will be referred to as the "non-bonding surface W1n." Hereinafter, the surface of the lower wafer W2 that is bonded to the upper wafer W1 will be referred to as the "bonding surface W2j," and the surface opposite the bonding surface W2j will be referred to as the "non-bonding surface W2n." The overlapped wafer T, the upper wafer W1, and the lower wafer W2 may have shapes other than circles (e.g., polygonal shapes).

[0012] At least one of the upper wafer W1 and the lower wafer W2 is a semiconductor substrate, such as a silicon wafer or a compound semiconductor wafer, on which multiple electronic circuits are formed. Compound semiconductor wafers are, for example, GaAs wafers, SiC wafers, GaN wafers, or InP wafers. One of the upper wafer W1 and the lower wafer W2 may be a bare wafer on which no electronic circuits are formed.

[0013] 3A shows an example of a laminated wafer T in which a support substrate is used as the upper wafer W1 and a silicon wafer on which an electronic circuit is formed is used as the lower wafer W2. In this case, the thickness of the support substrate (upper wafer W1) is greater than the thickness of the lower wafer W2. The material of the support substrate (upper wafer W1) is not particularly limited, and it may be made of silicon, quartz glass, or the like.

[0014] The bonding surface W1j of the upper wafer W1 and the bonding surface W2j of the lower wafer W2 are bonded together with an adhesive G. The type of adhesive G is not particularly limited, and an appropriate resin material may be selected depending on the materials of the upper wafer W1 and the lower wafer W2. Alternatively, the upper wafer W1 and the lower wafer W2 may be chemically bonded together. For example, the surfaces (bonding surfaces W1j, W2j) of the upper wafer W1 and the lower wafer W2 may be modified by plasma treatment, and the modified surfaces may be further hydrophilized with pure water, thereby bonding the upper wafer W1 and the lower wafer W2 together through van der Waals forces and hydrogen bonds (intermolecular forces).

[0015] 3B, the overlapping wafer T has a notch N at a part of the circumferential edge of the outer edge. For example, the notch N is formed by cutting out the outer edges of the upper wafer W1 and the lower wafer W2. The upper wafer W1 and the lower wafer W2 are bonded together so that the notches N of the two wafers are aligned.

[0016] As shown in Figures 3A and 3B, the overlapped wafer T according to the embodiment is held by a holding jig HJ having a dicing frame F and a dicing tape P. The dicing frame F of the holding jig HJ is an annular metal member having an opening F1 on the inside that is larger in diameter than the overlapped wafer T. The dicing frame F has a polygonal or annular shape in plan view. The thickness of the dicing frame F is greater than the thickness of the overlapped wafer T.

[0017] The dicing tape P of the holding jig HJ is made of a flexible resin material that is elastically deformable, and has an adhesive layer formed on one surface (top surface) thereof. The peripheral edge of the dicing tape P is adhered to the back surface of the dicing frame F, thereby closing the opening F1 of the dicing frame F. Then, within the opening F1 of the dicing frame F, the back surface of the overlapped wafer T is fixed to one surface of the dicing tape P. Specifically, the non-bonding surface W2n of the lower wafer W2 is attached to the adhesive layer on the top surface of the dicing tape P. The dicing tape P can expose the peripheral side surface of the overlapped wafer T by relatively displacing the overlapped wafer T and the dicing frame F in the thickness direction.

[0018] 1 , the peeling system 100 includes a loading / unloading station 1, a delivery station 2, and a processing station 3. The loading / unloading station 1, the delivery station 2, and the processing station 3 are each configured as a separable unit, and are installed so as to be lined up in this order in the positive direction of the Y axis.

[0019] The loading / unloading station 1 carries out the loading of the overlapped wafer T, the unloading of the upper wafer W1 and the lower wafer W2 after separation, etc. The loading / unloading station 1 includes a mounting part 4 and a first transfer device 5.

[0020] The mounting unit 4 has a plurality of cassette mounting stages (three in FIG. 1 ) for setting cassettes such as FOUPs (Front-Opening Unified Pods) that can accommodate a plurality of substrates. Examples of cassettes that can be placed on each cassette mounting stage include a cassette Ct that accommodates a superposed wafer T, a cassette C1 that can accommodate a separated upper wafer W1, and a cassette C2 that can accommodate a separated lower wafer W2.

[0021] The first transfer device 5 is disposed adjacent to the mounting part 4 on the positive side of the Y axis, and transfers the overlapped wafer T, the upper wafer W1, and the lower wafer W2. The first transfer device 5 includes, for example, a base and a plurality of transfer arms, and performs operations such as moving the substrate held by the transfer arms in the horizontal direction, raising and lowering the substrate in the vertical direction, and rotating the substrate around the vertical axis of the base. The first transfer device 5 is an example of a substrate transfer device.

[0022] In the carry-in / out station 1, the first transfer device 5 transfers the overlapped wafer T from each cassette Ct to the delivery station 2, and also transfers the upper wafer W1 and the lower wafer W2 after separation from the delivery station 2 to the cassettes C1 and C2, respectively.

[0023] The delivery station 2 delivers the laminated wafer T before separation, the upper wafer W1 after separation, and the lower wafer W2 after separation. As shown in Fig. 2, the delivery station 2 includes, for example, a first delivery part 25, a second delivery part 26, a delivery part with an inversion mechanism 27, and an aligner 28. The first delivery part 25, the second delivery part 26, the delivery part with an inversion mechanism 27, and the aligner 28 are installed so as to be lined up in this order facing vertically upward (positive direction of the Z axis).

[0024] The overlapped wafer T transferred from the carry-in / out station 1 is placed on the first transfer section 25. The overlapped wafer T placed on the first transfer section 25 is transferred to the processing station 3 by the second transfer device 6, which will be described later.

[0025] The lower wafer W2 after separation is placed on the second transfer part 26. The lower wafer W2 after separation placed on the second transfer part 26 is transferred to the transfer-in / out station 1 by the first transfer device 5.

[0026] The upper wafer W1 after separation is placed on the transfer part with reversing mechanism 27. The transfer part with reversing mechanism 27 is provided with a reversing mechanism (not shown) that reverses the upper and lower surfaces of the upper wafer W1 after separation. The upper and lower surfaces of the upper wafer W1 after separation placed on the transfer part with reversing mechanism 27 are reversed by the reversing mechanism, and then the upper wafer W1 is transferred to the carry-in / out station 1 by the first transfer device 5.

[0027] The aligner 28 performs alignment processing on some or all of the overlapped wafer T, the upper wafer W1 after delamination, and the lower wafer W2 after delamination. For example, when performing alignment processing on the overlapped wafer T, the aligner 28 holds and rotates the overlapped wafer T and detects the position of the notch N (see FIG. 3B ) of the overlapped wafer T during rotation to calculate the amount of eccentricity of the overlapped wafer T. Based on this amount of eccentricity, the delamination system 100 adjusts the horizontal orientation of the overlapped wafer T by appropriately operating the aligner 28 and the first transfer device 5 or the second transfer device 6. The same applies when performing alignment processing on the upper wafer W1 or the lower wafer W2.

[0028] The processing station 3 includes a second transfer device 6 and a delamination device 7, and performs delamination into the upper wafer W1 and the lower wafer W2 from the overlapped wafer T. For example, the processing station 3 is installed such that the second transfer device 6 and the delamination device 7 are aligned in the X-axis direction.

[0029] The second transfer device 6 transfers the overlapped wafer T and the separated upper wafer W1 and lower wafer W2 between the delivery station 2 and the delamination device 7. The second transfer device 6 includes, for example, a base and a plurality of transfer arms, and moves the held substrate horizontally, raises and lowers it vertically, and rotates it around the vertical axis of the base. The second transfer device 6 is an example of a substrate transfer device.

[0030] The processing station 3 performs a carry-in process of carrying the overlapped wafer T from the delivery station 2 to the delamination device 7 using the second transfer device 6. The processing station 3 also performs a carry-out process of carrying the delaminated lower wafer W2 from the delamination device 7 to the delivery station 2, and a carry-out process of carrying the delaminated upper wafer W1 from the delamination device 7 to the delivery station 2, separately using the second transfer device 6.

[0031] The delamination device 7 delaminates the laminated wafer T carried in by the second transfer device 6 into the upper wafer W1 and the lower wafer W2. The specific configuration and operation of the delamination device 7 will be described in detail later.

[0032] The stripping system 100 also includes a control device 8 that controls the operation of the stripping system 100. The control device 8 is a computer including a processor 81, a memory 82, and an input / output interface (not shown). The processor 81 is one or a combination of a central processing unit (CPU), a graphics processing unit (GPU), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a circuit made up of multiple discrete semiconductors, and the like. The memory 82 includes both non-volatile and volatile memory. The memory 82 stores programs that control various processes, and the processor 81 controls the operation of the stripping system 100 by reading and executing the programs stored in the memory 82. In other words, in the present disclosure, the control device 8 is an electronic circuit including a CPU, a GPU, an ASIC, an FPGA, etc., and performs the various control operations described herein by executing instruction codes stored in the memory 82 or by being designed as a circuit for a specific application.

[0033] Under the control of the control device 8, the delamination system 100 first removes the overlapped wafer T from the cassette Ct placed on the placement unit 4 by the first transfer device 5 of the carry-in / out station 1 and places the overlapped wafer T on the first transfer unit 25 of the delivery station 2. Next, the delamination system 100 removes the overlapped wafer T placed on the first transfer unit 25 by the second transfer device 6 of the processing station 3 and carries it into the aligner 28. The control device 8 calculates the amount of eccentricity of the overlapped wafer T by the aligner 28 and controls the second transfer device 6 to adjust the receiving position of the overlapped wafer T (the horizontal orientation of the overlapped wafer T) based on this amount of eccentricity. Furthermore, the delamination system 100 carries the overlapped wafer T from the aligner 28 to the delamination device 7 by the second transfer device 6.

[0034] Then, the delamination device 7 delaminates the overlapped wafer T into the upper wafer W1 and the lower wafer W2 under the control of the control device 8. Note that the delamination device 7 may include a dedicated control board or the like, and control the delamination of the overlapped wafer T under the control of the control board based on commands from the control device 8.

[0035] After the delamination by the delamination device 7, the delamination system 100 operates the second transfer device 6 to transfer the lower wafer W2 from the delamination device 7 to the aligner 28, adjusts the horizontal orientation of the lower wafer W2 by the aligner 28, and then transfers the lower wafer W2 to the second transfer part 26. Furthermore, the delamination system 100 uses the first transfer device 5 to remove the lower wafer W2 from the second transfer part 26 and stores it in the cassette C2 placed in the carry-in / out station 1. When the cassette C2 stores a certain number of lower wafers W2, it is removed from the carry-in / out station 1.

[0036] Furthermore, the delamination system 100 operates the second transfer device 6 to transfer the upper wafer W1 from the delamination device 7 to the aligner 28 at a timing separate from the transfer of the lower wafer W2. The upper wafer W1 is then adjusted in horizontal orientation by the aligner 28 and transferred to the transfer part with inversion mechanism 27. Furthermore, the delamination system 100 inverts the upper and lower surfaces of the upper wafer W1 using the inversion mechanism of the transfer part with inversion mechanism 27. As a result, the upper wafer W1 is placed with its bonding surface W1j facing upward. The delamination system 100 then uses the first transfer device 5 to remove the upper wafer W1 from the transfer part with inversion mechanism 27 and place it in the cassette C1 placed in the carry-in / out station 1. Once a certain number of upper wafers W1 have been accommodated in the cassette C1, the cassette C1 is removed from the carry-in / out station 1.

[0037] <Configuration of Delamination Apparatus 7> Next, the configuration of the delamination apparatus 7 according to the embodiment will be described with reference to Fig. 4. The delamination apparatus 7 holds the overlapped wafer T in a sandwiched manner along the vertical direction (Z-axis direction), and delaminates the upper wafer W1 and the lower wafer W2 of the overlapped wafer T. The delamination apparatus 7 has a processing vessel 30 into which the overlapped wafer T is loaded, and is equipped with an adsorption / debonding unit 40, a holding unit 50, and a debonding induction unit 60 inside the processing vessel 30.

[0038] The suction and separation unit 40 suctions the non-bonding surface W1n of the upper wafer W1 of the overlapped wafer T, holds the upper wafer W1, and performs a separation operation by lifting the upper wafer W1 vertically upward. The suction and separation unit 40 includes a base member 41, a pair of (two) lifting mechanisms 42 provided on the base member 41, a support member 43 supported by the pair of lifting mechanisms 42, and an upper suction group 44 supported by the support member 43 and suctioning the upper wafer W1. The suction and separation unit 40 further includes a delivery holder 47 that operates to deliver the peeled upper wafer W1 to a transfer device (not shown), and a push-down unit 48 that pushes down the dicing frame F of the holding jig HJ.

[0039] The base member 41 is a plate member having an appropriate thickness, and is directly or indirectly fixed to, for example, the ceiling wall (or side wall) of the processing vessel 30. The base member 41 has sufficient rigidity and maintains a position extending horizontally (in the X-Y axis direction) within the processing vessel 30.

[0040] The pair of lifting mechanisms 42 are fixed to the upper part of the base member 41 and are arranged at the same height. The pair of lifting mechanisms 42 support a support member 43 arranged vertically below the base member 41, and raise and lower this support member 43. Each lifting mechanism 42 includes a main body 421, a shaft 422 protruding vertically downward from the main body 421, and a load cell 423 that detects the load acting on the shaft 422.

[0041] The main body 421 is attached to the base member 41, and is provided therein with a drive source and a transmission mechanism (neither of which are shown) that vertically raise and lower the shaft 422. The main body 421 is connected to the control device 8, and raises and lowers the shaft 422 under the control of the control device 8. The peeling device 7 is capable of raising and lowering the shafts 422 of the pair of lifting mechanisms 42 independently of each other.

[0042] The shaft 422 extends linearly in the vertical direction and supports the support member 43 connected to its lower end. The load cell 423 detects the load acting on the shaft 422 and transmits the detection result to the control device 8. When peeling the overlapped wafer T, the control device 8 controls the height position of the support member 43 based on the detection result of the load cell 423.

[0043] The support member 43 is a thin plate-like member that supports the upper suction group 44 that adsorbs the upper wafer W1. The support member 43 is formed from a metal material or the like, and has both rigidity that allows it to support the upper suction group 44 and flexibility that allows it to elastically deform in the vertical direction. The support member 43 is suspended so as to bridge the pair of lifting mechanisms 42, and extends approximately parallel to the suction surface 51s of the lower holding unit 50. As a result, the lower surface of the support member 43 faces the overlapped wafer T held by the holding unit 50.

[0044] 5, the support member 43 has a disk 431 and a pair of protruding plates 432 provided on both sides of the disk 431 in the Y-axis direction. The disk 431 and the pair of protruding plates 432 are fixed to each other by an appropriate connecting means such as screws, welding, or adhesive. The disk 431 and the pair of protruding plates 432 may be integrally molded.

[0045] The disk 431 is formed in a perfect circular shape with a diameter approximately equal to that of the upper wafer W1. The center of the disk 431 substantially coincides with the center of an adsorption surface 51s of the holder 50, which will be described later. In a plan view, the disk 431 overlaps the overlapped wafer T held by the holder 50. The disk 431 constitutes a portion that directly supports the upper adsorption group 44.

[0046] A through-hole 433 penetrating in the thickness direction is provided in a region including the center of the disk 431. The through-hole 433 allows the transfer holder 47 (see FIG. 4 ), which will be described later, to pass through, thereby enabling the transfer holder 47 to hold the upper wafer W1. The disk 431 may have a plurality of small holes (not shown) penetrating in the thickness direction, thereby facilitating elastic deformation of the disk 431. Furthermore, the disk 431 may have a plurality of ribs or grooves extending along the X-axis direction in the Y-axis direction, thereby suppressing elastic deformation of the disk 431 in the X-axis direction while promoting elastic deformation in the Y-axis direction.

[0047] The pair of protruding plates 432 protrude in opposite directions from the outer periphery of the disk 431 in the Y-axis direction. A shaft 422 of the lifting mechanism 42 is connected to the protruding end of each protruding plate 432. As a result, each protruding plate 432 is raised and lowered in the vertical direction (Z-axis direction) by the pair of lifting mechanisms 42. The horizontal orientation of the disk 431 changes depending on the height position of each protruding plate 432 (shaft 422 of the lifting mechanism 42). In particular, the support member 43 elastically deforms so as to be curved in the Y-axis direction as the lifting mechanisms 42 independently raise and lower, thereby displacing the upper suction group 44 while bending it (see also FIG. 6C ).

[0048] 4 and 5 , the upper suction group 44 supported by the support member 43 has a plurality of suction bodies 45. Each suction body 45 includes a cylindrical portion 451 extending vertically, a contact portion 452 provided at the lower end of the cylindrical portion 451, and a suction path 453 connected to the cylindrical portion 451. Each of the suction paths 453 of each suction body 45 is provided with a suction device 454 such as a vacuum pump. The suction paths 453 may be joined externally and connected to a single suction device 454.

[0049] The cylindrical portion 451 has an internal suction space extending along the axial direction. The cylindrical portion 451 is firmly connected to the disc 431 of the support member 43 and protrudes from the lower surface of the support member 43. When the support member 43 is in a horizontal position, the contact portions 452 of the cylindrical portions 451 are positioned at the same height. Furthermore, a port 455 connected to the suction path 453 is provided on the upper surface side of the support member 43 in the cylindrical portion 451.

[0050] The contact portion 452 is formed, for example, in a truncated cone shape or a cylindrical shape, and constitutes a portion that directly contacts the non-bonding surface W1n of the upper wafer W1. The contact portion 452 is preferably formed of a rubber material or other resin material. The contact portion 452 is preferably formed to have high rigidity (to be less susceptible to elastic deformation). This is because if the contact portion 452 were to undergo significant elastic deformation when the adhering / separating unit 40 was raised, the adsorbed portion of the upper wafer W1 would also be significantly deformed, which could damage the upper wafer W1 or the lower wafer W2.

[0051] The suction device 454 is connected to the control device 8 and performs a suction operation under the control of the control device 8. With the contact portion 452 in contact with the non-bonding surface W1 n of the upper wafer W1, each suction body 45 applies suction pressure from the suction device 454 to the contact portion 452 via the suction path 453 and the cylindrical portion 451, thereby suctioning the upper wafer W1.

[0052] 5, five adsorbents 45 are provided for each support member 43. One pair of adsorbents 45 are arranged in the X-axis direction on the negative Y-axis side of the support member 43, sandwiching the protruding plate 432 therebetween. Another pair of adsorbents 45 are arranged in the X-axis direction on the through-hole 433 side of the support member 43 (on the negative Y-axis side of the center of the support member 43), sandwiching the through-hole 433 therebetween. The remaining adsorbent 45 is provided on the positive Y-axis side of the support member 43 (at a position adjacent to the protruding plate 432 on the negative Y-axis side). However, it goes without saying that the number and arrangement of each adsorbent 45 can be designed as desired.

[0053] 4, the upper suction group 44 has a plurality of distance sensors 46 fixed to the base member 41. The control device 8 can calculate the height (vertical position) of the upper wafer W1 by measuring the distance to the opposing overlapped wafer T (upper wafer W1) with each distance sensor 46. For example, the control device 8 can recognize the progress of separation by calculating the height of the upper wafer W1 during the separation operation.

[0054] The delivery holder 47 of the suction / separation unit 40 is installed on the base member 41, and holds the upper wafer W1 by suctioning the non-bonding surface W1n of the upper wafer W1 after separation held by the upper suction group 44. The delivery holder 47 includes a base 471, a plurality of suction pads 472, a plurality of contact pads 473, and a base lifting mechanism 474 (FIG. 4 shows one suction pad 472 and one contact pad 473 as representatives).

[0055] The base 471 is formed in a cylindrical shape that extends vertically and passes through a through-hole (not shown) in the base member 41. The base 471 supports a plurality of suction pads 472 and a plurality of contact pads 473 on its lower end surface. The base 471 is connected to a base lifting mechanism 474 and is raised and lowered in the vertical direction by the base lifting mechanism 474. When lowered, the base 471 passes through the through-hole 433 of the support member 43.

[0056] The plurality of suction pads 472 are made of a rubber material or the like and have, for example, a bellows shape, so that they can follow the vertical and horizontal displacement of the upper wafer W1. Each suction pad 472 is connected to a suction device 476, such as a vacuum pump, via a suction path 475. The suction device 476 is connected to the control device 8 and performs a suction operation under the control of the control device 8. The delivery holder 47 generates a suction pressure (negative pressure) on the plurality of suction pads 472 via the suction path 475 and the base 471, thereby suctioning the non-bonding surface W1n of the upper wafer W1.

[0057] On the other hand, the plurality of contact pads 473 are formed of a resin material in a hemispherical shape or the like, and come into contact with the non-bonding surface W1n of the upper wafer W1 sucked by each suction pad 472. The amount of protrusion of each contact pad 473 from the base 471 can be adjusted by an adjustment unit (not shown), and assists in detaching the upper wafer W1 from the delivery holder 47.

[0058] The base lifting mechanism 474 moves the base 471 up and down based on the control of the control device 8, thereby displacing the plurality of suction pads 472 and the plurality of contact pads 473 in the vertical direction. For example, the base lifting mechanism 474 moves the plurality of suction pads 472 and the plurality of contact pads 473 up and down between a standby position, a transfer position where the upper wafer W1 held by the upper suction group 44 is sucked after separation, and a transfer position where the upper wafer W1 is transferred to the second transfer device 6.

[0059] The push-down units 48 of the adhering / separating unit 40 are provided on the outer periphery of the base member 41 (radially outward of the pair of lifting mechanisms 42) and push down the dicing frame F vertically downward at an appropriate timing. For example, four push-down units 48 are provided around the circumference at positions corresponding to the dicing frame F transported to the holding unit 50. It goes without saying that the number of push-down units 48 is not particularly limited.

[0060] Each press-down unit 48 includes a pressure pad 481, a shaft member 482, and a movement mechanism 483. The pressure pad 481 is formed of an elastic member such as rubber. The shaft member 482 is supported by the movement mechanism 483 so as to be movable in the vertical direction, and has the pressure pad 481 attached to its lower end. The movement mechanism 483 is fixed to the base member 41 and connected to the control device 8, and lowers and raises the shaft member 482 under the control of the control device 8.

[0061] On the other hand, the holding unit 50 of the peeling device 7 is provided from the vertical middle to the lower side of the processing vessel 30, and adsorbs and holds the holding jig HJ that holds the overlapped wafer T. The holding unit 50 includes a disk-shaped lower chuck 51, a support 52 that supports the lower chuck 51, a rotation and lifting mechanism 53 that rotates and lifts the lower chuck 51, and a frame holding unit 54 that holds a dicing frame F radially outside the lower chuck 51.

[0062] The lower chuck 51 fixes the overlapped wafer T during peeling by adsorbing the dicing tape P of the holding jig HJ that holds the overlapped wafer T. The configuration of the lower chuck 51 will be described in detail later.

[0063] When the overlapped wafer T is placed on the holder 50, the position of the overlapped wafer T is adjusted so that the center of the overlapped wafer T (lower wafer W2) coincides with the center of the lower chuck 51. The lower chuck 51 has a plurality of lift pins (not shown) therein, and the overlapped wafer T is placed on the lower chuck 51 by raising and lowering the lift pins.

[0064] The rotary lifting mechanism 53 also enables the lower chuck 51 to rotate and to be displaced in a peeling direction (vertical direction) perpendicular to the insertion direction of the blade 61. For example, the rotary lifting mechanism 53 includes therein a drive source for rotating the support column 52, a drive source for raising and lowering the support column 52, and a transmission mechanism (neither of which is shown) for transmitting the driving force of each drive source. The rotary lifting mechanism 53 is connected to the control device 8 and, under the control of the control device 8, rotates the lower chuck 51 about the vertical axis and raises and lowers the lower chuck 51.

[0065] The frame holding portion 54 adsorbs the dicing frame F pressed down by the press-down portions 48, and holds the dicing frame F in the pressed-down state. The frame holding portion 54 includes a plurality of suction pads 541 and supports 542 that support the suction pads 541. The suction pads 541 are formed from an elastic material such as rubber, and, for example, four suction pads 541 are provided at equal intervals around the circumference of the dicing frame F at corresponding positions. As an example, each suction pad 541 may be provided at a position vertically opposite the plurality of press-down portions 48. It goes without saying that the number of suction pads 541 is not particularly limited.

[0066] Each suction pad 541 has an air intake port (not shown) on the inside. Each suction pad 541 is connected to a suction device 545 such as a vacuum pump via a support 542, a suction pipe 543 connected to the support 542, and a suction path 544 connected to the suction pipe 543. The upper end (air intake port) of the suction pad 541 is positioned vertically below the suction surface 51s of the lower chuck 51. The suction device 545 applies suction pressure to each suction pad 541 under the control of the control device 8.

[0067] The support 542 is supported by a lower base portion 546 and protrudes vertically at appropriate positions (on the circumferential direction at positions corresponding to the dicing frame F) to hold each suction pad 541. The lower base portion 546 is formed in a disk shape, and fixes the support 542 and the support columns 52. In addition, a rotation shaft (not shown) of the rotary lifting mechanism 53 is connected to the underside of the lower base portion 546.

[0068] The frame holding unit 54 can suck and hold the dicing frame F by utilizing the negative pressure generated by the suction of the suction device 545. Furthermore, the holding unit 50 can displace (rotate and lift) the overlapped wafer T held by the lower chuck 51 and the dicing frame F held by the frame holding unit 54 together using the rotation and lift mechanism 53.

[0069] On the other hand, the peeling inducer 60 of the peeling device 7 is disposed to the side of the suction / peeling unit 40 and the holding unit 50, and forms a cut portion CP (see FIG. 6B ) radially inward from the outer edge of the overlapped wafer T when peeling the upper wafer W1 and the lower wafer W2 of the overlapped wafer T. This peeling inducer 60 includes a blade 61, a blade slide mechanism 62, and a blade lifting mechanism 63.

[0070] The blade 61 is a peeling member having a cutting edge that forms an acute angle in the positive direction of the Y axis. In plan view, the blade 61 is formed in a rectangular shape that is short along the Y axis direction and long along the X axis direction (see also FIG. 5). The length of the blade 61 in the Y axis direction, in other words, the longitudinal length of the blade 61, may be set to an appropriate dimension within the range of 50 mm to 150 mm, for example. In this embodiment, the longitudinal length of the blade 61 is 100 mm.

[0071] The blade slide mechanism 62 has a movable body 621 that supports the blade 61, and a fixed body 622 that slidably supports the movable body 621. The movable body 621 supports the blade 61 so that it protrudes in the positive direction of the Y axis, and reciprocates in the Y axis direction relative to the fixed body 622 based on the drive of a drive source (not shown). In other words, the blade 61 is moved forward in the positive direction of the Y axis and backward in the negative direction of the Y axis by the blade slide mechanism 62.

[0072] The blade lifting mechanism 63 is fixed to, for example, the end of the base member 41 on the negative Y-axis direction side, and moves the blade sliding mechanism 62 in the vertical direction. This allows the peeling induction unit 60 to adjust the height position of the blade 61.

[0073] The peeling inducer 60 adjusts the height position of the blade 61 using, for example, a blade lifting mechanism 63, and then advances the blade 61 in the negative direction of the Y axis using a blade sliding mechanism 62. As the blade 61 advances, the cutting edge of the blade 61 penetrates into the adhesive G between the upper wafer W1 and the lower wafer W2 from the side of the overlapped wafer T, thereby forming a notch portion CP (see FIG. 6B ) between the upper wafer W1 and the lower wafer W2. The notch portion CP is a portion where the adhesive G bonding the vicinity of the outer edge of the overlapped wafer T is broken, and the bonding surface W1j of the upper wafer W1 is separated from the bonding surface W2j of the lower wafer W2.

[0074] <Procedure for Peeling the Superimposed Wafer T> The peeling device 7 configured as above peels the superimposed wafer T in accordance with the procedures shown in FIGS. 6A to 6D under the control of the control device 8.

[0075] Specifically, as shown in FIG. 6A , after the overlapped wafer T integrated with the dicing frame F is placed on the holding unit 50, the peeling device 7 applies suction pressure to the lower chuck 51 to fix the overlapped wafer T to the lower chuck 51 via the dicing tape P. The peeling device 7 also lowers the press-down unit 48 vertically downward, pressing down the dicing frame F with the press-down unit 48. At this time, the portion of the dicing tape P located outside the lower chuck 51 deforms obliquely downward, allowing the dicing frame F to be displaced. The peeling device 7 also operates the frame holding unit 54 to apply suction pressure to the suction pad 541, thereby holding the pressed-down dicing frame F on the frame holding unit 54. This brings the side of the overlapped wafer T into contact with the blade 61 of the peeling inducer 60.

[0076] Next, as shown in FIG. 6B, the peeling device 7 performs a notch forming operation to form a notch portion CP by inserting the blade 61 of the peeling inducer 60 between the upper wafer W1 and the lower wafer W2 of the overlapped wafer T.

[0077] 6(C), the separation device 7 uses the pair of lifting mechanisms 42 to lower the upper suction group 44, thereby suctioning the upper wafer W1 with each suction body 45. Furthermore, the separation device 7 raises the lifting mechanism 42 on the negative Y-axis side to bend the support member 43 on the negative Y-axis side. This causes the negative Y-axis side suction body 45 to rise so as to lift up the negative Y-axis side of the upper wafer W1, thereby commencing a separation operation to separate the upper wafer W1 from the lower wafer W2. The lifting mechanism 42 slowly raises the degree of curvature of the support member 43, and as a result, separation of the upper wafer W1 and the lower wafer W2 progresses from the negative Y-axis side to the positive Y-axis side.

[0078] When the separation of the upper wafer W1 and the lower wafer W2 has progressed to a certain extent (for example, when the separation has progressed beyond the center of the overlapped wafer T), the separation device 7 also raises the lifting mechanism 42 on the Y-axis positive side, thereby separating the upper wafer W1 from the lower wafer W2, as shown in Fig. 6(D) In ​​the latter half of the separation operation, the bonding force between the upper wafer W1 and the lower wafer W2 has also weakened, allowing the separation to proceed smoothly.

[0079] As described above, the separation device 7 can separate the upper wafer W1 from the lower wafer W2 by operating the suction and separation unit 40, the holding unit 50, and the separation induction unit 60 in conjunction with each other.

[0080] 7A, when the overlapping wafer T is attached to the dicing tape P of the holding jig HJ, air bubbles B may get trapped. For example, when a silicon wafer having a plurality of semiconductor devices (dies) on which electronic circuits are formed is used as the lower wafer W2, the non-bonding surface W2n of the lower wafer W2 has protrusions w2p that protrude by several tens of micrometers directly below the scribe lines between the semiconductor devices. For this reason, air bubbles B may get trapped between the opposing surfaces of the lower wafer W2 and the dicing tape P when they are attached to each other (bubble entrapment).

[0081] If the trapped air bubble B is large, the dicing tape P will bulge significantly downward in the vertical direction. When the holding jig HJ and the overlapped wafer T having a large air bubble B are held by the lower chuck 51, the holding jig HJ and the overlapped wafer T are placed at an angle, as shown in FIG. 7B . Note that FIG. 7B exaggerates the angle of the holding jig HJ and the overlapped wafer T. In this case, even if the lower chuck 51 applies suction pressure, it will draw in air around the overlapped wafer T, resulting in a decrease in the suction pressure of the overlapped wafer T. The holding unit 50 according to the embodiment is configured to stably and firmly hold the holding jig HJ and the overlapped wafer T even when such an air bubble B occurs.

[0082] <First embodiment> Specifically, as shown in Figures 8(A) and 8(B) , the lower chuck 51 according to the first embodiment has an adsorption body 511 and a concave container 512 that accommodates the adsorption body 511.

[0083] The suction body 511 is formed in a disk shape having an appropriate thickness, and has, on its upper surface, a circular suction surface 51s that holds the overlapped wafer T via the dicing tape P. The diameter of the suction surface 51s is set to be the same as or slightly larger than the diameter of the lower wafer W2 of the overlapped wafer T. When the diameter of the lower wafer W2 is 300 mm, for example, the diameter of the suction surface 51s may be set to 306 mm (approximately 101% to 104% of the diameter of the lower wafer W2).

[0084] The adsorbent 511 is a porous member made of a resin material such as PCTFE (polychlorotrifluoroethylene). The adsorbent surface 51s is flat and does not have any processed grooves or holes. This allows the lower chuck 51 to exert a suction pressure on the suction surface 51s through the thickness direction of the adsorbent 511. In other words, the lower chuck 51 according to this embodiment is a porous chuck that applies a suction pressure by virtue of its porosity.

[0085] The adsorption body 511 is divided into a central region R1 and an outer peripheral region R2 that surrounds the central region. A partition wall 515 that protrudes from the bottom wall 512a of the container 512 and separates the adsorption body 511 is provided inside the adsorption body 511. The partition wall 515 is annularly circumferentially concentric with the center of the lower chuck 51, forming a boundary between the circular central region R1 and the annular outer peripheral region R2. The partition wall 515 prevents the porous media in the central region R1 from communicating with the porous media in the outer peripheral region R2. The partition wall 515 is formed across the thickness of the adsorption body 511, thereby airtightly separating the central region R1 and the outer peripheral region R2 in the thickness direction.

[0086] The material of the partition 515 is not particularly limited as long as it is airtight, and may be a resin material or a metal material. The partition 515 may be formed to be airtight using the same material as the adsorbent 511. Alternatively, the partition 515 may be pre-formed within the adsorbent 511. For example, in manufacturing the adsorbent 511, an airtight partition 515 member is prepared, and the adsorbent 511 in the central region R1 is formed on the inside and the adsorbent 511 in the peripheral region R2 is formed on the outside, thereby forming an integrated adsorbent 511. Alternatively, the partition 515 may be molded integrally with the container 512.

[0087] If the diameter of the adsorption body 511 is 300 mm, for example, the diameter of the partition wall 515 is set to 200 mm. Converting this to a radius, the radius of the partition wall 515 is set to 50 mm, relative to the radius of the adsorption body 511, which is 150 mm. In other words, in a plan view of the adsorption surface 51s, the ratio of the radius of the central region R1 to the radial width of the outer peripheral region R2 is 2:1. The ratio of the formation area of ​​the central region R1 to the outer peripheral region R2 may be set appropriately depending on the adsorption pressure to be generated on the adsorption surface 51s, and for example, the radial width of the outer peripheral region R2 may be greater than the radius of the central region R1.

[0088] On the other hand, the container 512 has a bottom wall 512a that covers the bottom surface of the adsorptive body 511, and a side wall 512b that protrudes vertically upward from the outer edge of the bottom wall 512a and covers the outer circumferential surface of the adsorptive body 511. The container 512 is formed of a metal material such as aluminum.

[0089] The container 512 according to the embodiment accommodates the adsorbent 511 in the entire recess on the inside of the bottom wall 512 a and the side wall 512 b. However, when the adsorbent 511 is accommodated in the container 512, the outer circumferential surface of the adsorbent 511 may be fixed to create a small suction space between the container 512 and the bottom wall 512 a.

[0090] The holding unit 50 applies suction pressure to each of the central region R1 and the outer circumferential region R2 of the suction body 511 housed in the housing 512. For this reason, the holding unit 50 is separately provided with a first suction pressure applying unit 513 that applies suction pressure to the central region R1 and a second suction pressure applying unit 514 that applies suction pressure to the outer circumferential region R2.

[0091] The first suction pressure applying unit 513 has a suction pipe 513a fixed to penetrate the bottom wall 512a of the container 512 and a suction path 513b connected to the suction pipe 513a. The first suction pressure applying unit 513 also includes a suction device 513c connected to the suction path 513b outside the processing vessel 30 (see also FIG. 4 ). The suction device 513c can be a vacuum pump or the like and is configured to be able to communicate with the control device 8. The suction device 513c applies an appropriate suction pressure to the central region R1 of the adsorption body 511 via the suction path 513b and the suction pipe 513a based on a target pressure commanded by the control device 8.

[0092] The second suction pressure applying unit 514 also includes a suction pipe 514a, a suction path 514b, and a suction device 514c, similar to the first suction pressure applying unit 513. The suction device 514c applies an appropriate suction pressure to the outer peripheral region R2 of the adsorptive body 511 via the suction path 514b and the suction pipe 514a based on a target pressure commanded by the control device 8.

[0093] The delamination device 7 according to the first embodiment is basically configured as described above, and a delamination method including a holding method for holding the holding jig HJ and the overlapped wafer T will be described below with reference to Figures 9 and 10. As the delamination method, the control device 8 controls, for example, steps S101 to S107 shown in Figure 9.

[0094] The delamination system 100 first performs a carry-in process of loading the holding jig HJ and the overlapped wafer T into the delamination device 7 and placing the holding jig HJ on the holder 50 (step S101: process (A)). In the carry-in process, the second transfer device 6 transports the overlapped wafer T held by the holding jig HJ and loads the overlapped wafer T into the processing chamber 30 of the delamination device 7, and aligns the center of the overlapped wafer T with the center of the suction surface 51s of the lower chuck 51. The delamination device 7 also raises each lift pin from the suction surface 51s to receive the overlapped wafer T, and then lowers each lift pin to place the overlapped wafer T on the suction surface 51s.

[0095] Next, the peeling device 7 operates the first suction pressure applying unit 513 and the second suction pressure applying unit 514 to suction the overlapped wafer T to the suction body 511 of the lower chuck 51 via the dicing tape P (step S102: (B)). Specifically, as shown in FIG. 10 , the holding unit 50 suctions the dicing tape P in both the central region R1 and the outer peripheral region R2.

[0096] In the conventional peeling device, the lower chuck does not divide the suction body into multiple regions, and generates a uniform suction pressure over the entire suction surface. In this case, the suction pressure is diffused over the entire dicing tape P where the overlapping wafer T is located, resulting in a partial low suction pressure. For example, as shown in Figure 7(B), if the dicing tape P is partially protruding downward in the vertical direction due to an air bubble B, the partial low suction pressure makes it impossible to suction the overlapping wafer T sufficiently to crush the air bubble B.

[0097] In contrast, the lower chuck 51 of the peeling apparatus 7 according to this embodiment applies suction pressure to the central region R1 using the first suction pressure applying unit 513, and applies suction pressure to the outer peripheral region R2 using the second suction pressure applying unit 514. In other words, the suction pressure is not diffused across the entire dicing tape P where the overlapping wafer T is located, but rather generates independent suction pressures in the central region R1 and the outer peripheral region R2. This increases the pressure on the suction surface 51s of the lower chuck 51, allowing the entire dicing tape P where the overlapping wafer T is located to be suctioned with strong suction force. For example, even if the dicing tape P is partially protruding downward in the vertical direction due to an air bubble B, the air bubble B can be crushed and the overlapping wafer T can be suctioned.

[0098] Furthermore, the first suction pressure applying unit 513 and the second suction pressure applying unit 514 can apply different suction pressures to the central region R1 and the outer peripheral region R2. For example, in FIG. 10 , the suction pressure in the central region R1 is set higher than the suction pressure in the outer peripheral region R2. This allows the lower chuck 51 to more strongly suction the dicing tape P in the central region R1, and prevents the lower wafer W2 from following when the upper wafer W1 is pulled up vertically by the suction / peeling unit 40.

[0099] The lower chuck 51 may set the same suction pressure in the central region R1 and the outer peripheral region R2. Alternatively, the lower chuck 51 may set the suction pressure in the outer peripheral region R2 to be greater than the suction pressure in the central region R1. This allows the lower chuck 51 to more strongly suction the dicing tape P in the outer peripheral region R2, and, for example, allows the blade 61 to easily insert into the overlapping wafer T when forming the notch portion CP using the peeling guide portion 60. For this reason, the lower chuck 51 may change the suction pressure in the central region R1 and the suction pressure in the outer peripheral region R2 over time. This allows the lower chuck 51 to suction the lower wafer W2 with an appropriate suction pressure for each process.

[0100] Furthermore, the first suction pressure application unit 513 and the second suction pressure application unit 514 may apply suction pressure to the central region R1 and the peripheral region R2 at the same time or at different times. For example, if a convex warp protruding vertically upward occurs near the center of the overlapped wafer T, suction pressure may be applied to the central region R1 first, and then suction pressure may be applied to the peripheral region R2. Conversely, if a concave warp protruding vertically downward occurs near the center of the overlapped wafer T, suction pressure may be applied to the peripheral region R2 first, and then suction pressure may be applied to the central region R1.

[0101] Furthermore, as described above, the suction surface 51s is formed to have an area slightly larger than that of the lower wafer W2. Therefore, the outer peripheral region R2 can also suction the dicing tape P in areas that do not overlap with the overlapping wafer T. In other words, by increasing the overall suction area for the dicing tape P, the lower chuck 51 can further strengthen the suction force for the dicing tape P.

[0102] 9, after the overlapped wafer T is fixed to the lower chuck 51, the peeling device 7 presses down the dicing frame F with the press-down unit 48, and adsorbs the dicing frame F to the frame holding unit 54 (step S103, see also FIG. 6A). This allows the holding unit 50 to integrally fix the overlapped wafer T and the dicing frame F. With the dicing frame F pressed down, the overlapped wafer T is in a state where the adhesive G between the upper wafer W1 and the lower wafer W2 is exposed to the sides.

[0103] In this state, the separation device 7 operates the separation inducer 60 to form a notch portion CP in the overlapped wafer T (step S104: (B) process, see also FIG. 6(B)). At this time, since the lower chuck 51 firmly adsorbs the lower wafer W2, the adsorption and separation portion 40 does not need to adsorb the upper wafer W1. After forming the notch portion CP, the separation inducer 60 puts the blade 61 into a standby state. As a result, at the start of the separation operation, separation of the upper wafer W1 and the lower wafer W2 can be started from the negative Y-axis direction side with the upper wafer W1 resting on the blade 61.

[0104] Thereafter, the separation device 7 operates the pair of lifting mechanisms 42 to lower the plurality of suction bodies 45 of the upper suction group 44, and suction the non-bonding surface W1n of the upper wafer W1 with each suction body 45 (step S105). Note that the suction of the upper wafer W1 by the upper suction group 44 may be performed before step S103.

[0105] Next, the separation device 7 proceeds to the separation operation, lifting the Y-axis negative side of the upper suction group 44 to separate the upper wafer W1 on the Y-axis negative side from the lower wafer W2 (step S106:). At this time, the shaft 422 of the Y-axis negative side lifting mechanism 42 of the pair of lifting mechanisms 42 is lifted to lift the Y-axis negative side suction bodies 45 (see also FIG. 6C). As a result, the upper wafer W1 on the Y-axis negative side begins to separate from the lower wafer W2. A counterclockwise moment, as shown in FIG. 6C, is generated on the upper wafer W1. Therefore, the upper suction group 44 can lift the upper wafer W1 from the Y-axis negative side in a rolling manner.

[0106] Then, when the lifting mechanism 42 on the negative Y-axis side has risen to a certain extent, the delamination device 7 starts raising the lifting mechanism 42 on the positive Y-axis side to raise the entire upper wafer W1 (see also FIG. 6D ). At this stage, the delamination of the upper wafer W1 from the lower wafer W2 has progressed further toward the positive Y-axis side than the center of the overlapped wafer T. Therefore, the delamination device 7 can lift the upper wafer W1 while suppressing damage to the upper wafer W1, and can support the upper wafer W1 horizontally at the transfer position.

[0107] The delamination system 100 then proceeds to an unloading process in which the delaminated upper wafer W1 and lower wafer W2 are unloaded from the delamination device 7 (step S107). In the unloading process, the delamination device 7 returns the delamination inducer 60 to its initial position and lowers the lower chuck 51. The delamination device 7 then releases the suction of the lower wafer W2 by the lower chuck 51 and the frame holder 54, and raises the lift pins to lift the lower wafer W2 from the suction surface 51s. The delamination system 100 moves the second transfer device 6 below the lower wafer W2, transfers the lower wafer W2 to the second transfer device 6 as the lift pins descend, and unloads the lower wafer W2 from the delamination device 7. Furthermore, the delamination device 7 uses the transfer holder 47 to hold the upper wafer W1 held by the suction bodies 45 of the upper suction group 44 at the transfer position. Then, the peeling system 100 adsorbs and holds the non-bonding surface W1n of the upper wafer W1 using the second conveying device 6, which is inserted vertically above each suction pad 472 of the transfer holding section 47, and then the second conveying device 6 transports the upper wafer W1 out of the peeling device 7.

[0108] As described above, the peeling device 7 can stably suction the overlapped wafer T held by the holding jig HJ using the central region R1 and outer peripheral region R2 of the lower chuck 51. For example, even if air bubbles B are formed between the lower wafer W2 and the dicing tape P, the central region R1 and outer peripheral region R2 can secure the lower wafer W2 to the dicing tape P with strong suction force. As a result, the peeling device 7 can stably perform the formation of the notch portion CP in the overlapped wafer T by the peeling inducer 60, the peeling operation by the suction and peeling unit 40, and the like.

[0109] Furthermore, the holding unit 50 has a porous adsorbent 511, which allows the flat adsorbing surface 51s to stably adsorb the dicing tape P. In particular, by providing the adsorbent 511 with a central region R1 and an outer peripheral region R2 inside, independent adsorption pressures can be applied to the adsorbing surface 51s, enabling the dicing tape P to be firmly held. Furthermore, because the diameter of the adsorbent 511 is larger than the diameter of the lower wafer W2, the holding unit 50 can also adsorb the dicing tape P in areas where the overlapping wafer T does not overlap, thereby enabling the dicing tape P to be more firmly adsorbed.

[0110] Furthermore, the delamination device 7 can apply independent suction pressures to the central region R1 and the peripheral region R2 by separately providing the first suction pressure applying unit 513 and the second suction pressure applying unit 514. Furthermore, the first suction pressure applying unit 513 and the second suction pressure applying unit 514 apply different suction pressures to the central region R1 and the peripheral region R2, thereby making it possible to hold the laminated wafer T more appropriately.

[0111] The separation device 7 according to the present disclosure is not limited to the above embodiment and may take various forms. For example, the separation device 7 is not limited to a configuration having a porous adsorption body 511, and a block-shaped chuck without any porous structure may be used. In this case, a plurality of holes or grooves may be provided in the adsorption surface 51s, and adsorption pressure may be applied to these holes or grooves, or a plurality of ribs may be provided, and adsorption pressure may be applied through holes formed in the bottom surfaces of the ribs.

[0112] Second Embodiment A lower chuck 51A according to the second embodiment differs from the lower chuck 51 according to the first embodiment in that a groove 516 for adsorbing the dicing tape P is provided in a side wall 512b of a container 512 that surrounds an adsorption body 511. In the second embodiment, components that are the same as or have the same functions as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof may be omitted.

[0113] Specifically, the lower chuck 51A includes a porous adsorption body 511 and a housing body 512 that houses the adsorption body 511. The diameter of the adsorption body 511 of the lower chuck 51A is set to match the diameter of the lower wafer W2. For example, the diameter of the adsorption surface 51s of the adsorption body 511 is 300 mm.

[0114] The suction body 511 of the lower chuck 51A is a continuous member that is not partitioned by the partition walls 515 as in the first embodiment. A first suction pressure applying unit 513 is connected to the bottom wall 512a of the accommodation body 512. Therefore, the first suction pressure applying unit 513 applies a uniform (undivided) suction pressure to the entire suction surface 51s of the suction body 511.

[0115] On the other hand, the container 512 has a circular bottom wall 512a and a ring-shaped side wall 512b, as in the first embodiment, but the radial width of the side wall 512b is wider than that of the side wall 512b in the first embodiment. The radial width of the side wall 512b depends on the size of the dicing frame F, but may be set to a range of, for example, about 5 mm to 10 mm.

[0116] The lower chuck 51 has a groove 516 on the upper surface of the side wall 512b. The groove 516 is set to a certain depth from the upper surface of the side wall 512b and extends circumferentially around the side wall 512b, forming a ring shape in a plan view. A suction pipe 514a is connected to the bottom of the groove 516 at an appropriate position in the circumferential direction. While FIG. 11 shows an example in which only one suction pipe 514a is connected, it is preferable that multiple suction pipes 514a be provided at equal intervals in the circumferential direction of the side wall 512b. Each suction pipe 514a is connected to a suction path 514b that branches off midway and is connected to a single suction device 514c via the suction path 514b. In other words, each suction pipe 514a, the suction path 514b, and the suction device 514c constitute a second suction pressure applying unit 514 that applies suction pressure to the groove 516.

[0117] The groove 516 applies the suction pressure of the second suction pressure applying unit 514 along the circumferential direction to suction the dicing tape P radially outward from the overlapping portion of the overlapping wafer T. For example, the groove 516 applies a suction pressure to the dicing tape P that is stronger (different) than the suction pressure applied by the suction body 511. However, the suction pressure of the groove 516 may be set arbitrarily. Thus, in the second embodiment, the entire suction surface 51s of the suction body 511 corresponds to the central region that suctions the dicing tape P where the overlapping wafer T is located, and the groove 516 provided outside of this corresponds to the peripheral region that suctions the dicing tape P where the overlapping wafer T is not located. For example, even if air bubbles B have entered between the overlapping wafer T and the dicing tape P, causing the dicing tape P to bulge, the lower chuck 51A can suction the dicing tape P radially outward from this. As a result, the lower chuck 51 can suction the entire dicing tape P with a strong suction force.

[0118] The upper surface of the sidewall 512b of the container 512 also has a tapered portion 517 at its outer edge, radially outward of the groove 516. The tapered portion 517 is an inclined surface that slopes vertically downward from the upper surface and extends in a circular pattern around the circumferential direction of the sidewall 512b. As shown in FIG. 12 , the tapered portion 517 tilts the dicing tape P during the peeling operation. This allows the peeling device 7 to efficiently release the dicing tape P when inserting the blade 61 of the peeling inducer 60 between the upper wafer W1 and the lower wafer W2 of the overlapped wafer T. This allows the peeling device 7 to prevent the dicing tape P from sticking to the blade 61 and to stably insert the blade 61.

[0119] Furthermore, the tapered portion 517 can alleviate the application of large localized forces to the dicing tape P. For example, even if the dicing tape P is pressed down vertically in a configuration in which the side walls 512b protrude radially outward as described above, the tapered portion 517 can gently incline the dicing tape P, thereby reducing the load on the dicing tape P.

[0120] As described above, the lower chuck 51A according to the second embodiment can also stably adsorb the overlapped wafer T held by the holding jig HJ. As a result, the peeling device 7 can successfully peel the overlapped wafer T. In particular, the lower chuck 51A can more reliably hold the dicing tape P by adsorbing the dicing tape P at the locations where the overlapped wafer T does not overlap using the grooves 516. Furthermore, because the lower chuck 51A has the grooves 516 formed in the upper surface of the side wall 512b of the container 512, it can smoothly apply suction pressure to the areas facing the grooves 516.

[0121] Furthermore, the lower chuck 51 has a tapered portion 517 on the side wall 512b, which can reduce the force locally applied to the dicing tape P. Furthermore, the peeling device 7 tilts the dicing tape P using the tapered portion 517, which can reduce the dicing tape P from sticking to the blade 61, allowing the blade 61 to be inserted stably.

[0122] The peeling device 7 and holding method according to the presently disclosed embodiments are illustrative in all respects and are not limiting. The embodiments can be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments can be configured in other ways and can be combined together without contradiction.

[0123] This application claims priority from Japanese Patent Application No. 2024-047034, filed on March 22, 2024, with the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0124] 7 Peeling device 50 Holding portion F Dicing frame F1 Opening HJ Holding jig P Dicing tape R1 Central region R2 Peripheral region T Overlapped wafer (overlapped substrate) W1 Upper wafer (first substrate) W2 Lower wafer (second substrate)

Claims

1. A peeling device for peeling off an overlapping substrate formed by bonding a first substrate and a second substrate, wherein the overlapping substrate is attached to the dicing tape by being placed in the opening of a holding jig having a dicing frame with an opening and a dicing tape fixed to the dicing frame so as to cover the opening, and the holding jig has a holding part that adsorbs the dicing tape to hold the overlapping substrate, and the holding part includes a central region and a peripheral region that is partitioned relative to the central region and surrounds the outside of the central region, and applies adsorption pressure to adsorb the dicing tape in each of the central region and the peripheral region.

2. The peeling device according to claim 1, wherein the holding section has a porous adsorbent that applies the adsorption pressure to the dicing tape.

3. The peeling device according to claim 2, wherein the holding section has a partition wall inside the adsorbent that separates the central region from the outer peripheral region.

4. The peeling apparatus according to claim 2, wherein the diameter of the adsorption body is larger than the diameter of the opposing second substrate.

5. The peeling device according to claim 1, wherein the holding section has a groove section that constitutes the outer peripheral region and applies the suction pressure to suction the dicing tape outside the outer edge of the laminated substrate.

6. A peeling device as described in claim 5, wherein the holding section comprises a porous adsorbent that applies the adsorption pressure to the dicing tape and a side wall that covers the outer periphery of the adsorbent, and the groove section is formed in a ring shape on the upper surface of the side wall.

7. A peeling device according to any one of claims 1 to 6, comprising: a first suction pressure applying section that applies the suction pressure to the central region; and a second suction pressure applying section that applies the suction pressure to the outer peripheral region.

8. The peeling device according to claim 7, wherein the first suction pressure applying section and the second suction pressure applying section apply different suction pressures to the central region and the outer peripheral region.

9. A peeling device according to any one of claims 1 to 6, wherein the holding portion has an annular tapered portion on the outer edge of the surface that holds the dicing tape.

10. A peeling device as described in claim 9, comprising: a push-down section that pushes down the dicing frame of the holding jig adsorbed to the holding section; a frame holding section that holds the pushed-down dicing frame; and a peeling inducement section that inserts a blade into the outer peripheral surface of the laminated substrate exposed by the dicing frame being pushed down to form a notch, wherein the tapered section tilts the dicing tape in a direction away from the blade when the dicing frame is pushed down.

11. A peeling device according to any one of claims 1 to 6, comprising an adsorption / peeling unit that adsorbs the first substrate of the laminated substrate and moves the first substrate in a direction separating it from the second substrate.

12. A holding method for holding an overlapped substrate formed by bonding a first substrate and a second substrate, wherein the overlapped substrate is attached to a dicing tape by being placed in the opening of a holding jig having a dicing frame with an opening and a dicing tape fixed to the dicing frame so as to cover the opening, the holding method comprising: (A) a step of placing the holding jig on a holding part; and (B) a step of adsorbing the dicing tape of the holding jig placed on the holding part to hold the overlapped substrate, wherein in the step (B), an adsorption pressure for adsorbing the dicing tape is applied to each of a central region of the holding part and an outer peripheral region that is partitioned from the central region and surrounds the outside of the central region.

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