Anti-reflection glass, preparation method therefor and use thereof

Abstract

Anti-reflection glass, a preparation method therefor and the use thereof. The anti-reflection glass comprises a glass substrate, a buffer layer deposited on the glass substrate, and an anti-reflection film layer deposited on the buffer layer, wherein the buffer layer is an inorganic-compound thin film layer with a hole structure. The anti-reflection glass in the present application comprises a buffer layer, which has a hole structure and can buffer tensile deformation generated when the glass substrate is stressed, such that a tensile force transferred to the anti-reflection film layer is reduced, thereby avoiding the generation of a breakage point in the anti-reflection film layer; and the propagating of a crack towards the glass substrate can also be prevented, thereby avoiding the breakage of the anti-reflection glass and improving the overall mechanical strength of the anti-reflection glass. Moreover, the anti-reflection glass in the present application features an ultra-wideband performance, and exhibits relatively high transmittance in the visible spectrum and the infrared part.

Description

Antireflection glass and its preparation method and application

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on March 29, 2024, with application number 202410389108.8 and application name “An anti-reflective glass, its preparation method and application”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of optical thin film technology, and in particular, to an antireflection glass and a preparation method and application thereof. Background Art

[0003] Antireflection coatings, also known as anti-reflection coatings, redistribute the energy of reflected and transmitted light on the surface of optical components, increasing the energy of transmitted light and reducing the energy of reflected light, thereby reducing reflection losses on the optical component surface. With the continuous development and research of antireflection coatings, the requirements for thickness, reflectivity, strength, and wider wavelength range of antireflection coatings have become increasingly higher.

[0004] Public content

[0005] The purpose of this application is to provide an antireflection glass and its preparation method and application, so as to solve the problem that the existing antireflection film has a narrow bandwidth and the transmittance and strength need to be further improved.

[0006] In order to achieve the above-mentioned objectives, the first aspect of the present application provides an anti-reflective glass, which includes a glass substrate, a buffer layer deposited on the glass substrate, and an anti-reflective film layer deposited on the buffer layer; the buffer layer is an inorganic compound thin film layer with a porous structure.

[0007] In some embodiments, the thickness of the buffer layer is 10 nm-30 nm; the pore size of the pore structure is 1 nm-30 nm, and the porosity is 20%-60%.

[0008] In some embodiments, the pore structure has a pore size of 2 nm to 10 nm and a porosity of 30% to 50%.

[0009] In some embodiments, the inorganic compound thin film layer is a SiO2 thin film layer, an Al2O3 thin film layer, or a MgF2 thin film layer.

[0010] In some embodiments, the antireflection film layer includes a low refractive index layer and a high refractive index layer that are alternately stacked in sequence; the low refractive index layer is a thin film layer with a refractive index less than 1.55, and the high refractive index layer is a thin film layer with a refractive index greater than 1.95; the high refractive index layer is in contact with the buffer layer; the low refractive index layer is a SiO2 thin film layer, and the high refractive index layer is a Ti3O5 thin film layer, a Nb2O5 thin film layer or a Si3N4 thin film layer.

[0011] In some embodiments, the total number of the low refractive index layer and the high refractive index layer is 4-8 layers, the number of the high refractive index layer is 2-4 layers, the number of the low refractive index layer is 2-4 layers, and the total thickness of the low refractive index layer and the high refractive index layer is 200nm-300nm.

[0012] In some embodiments, the antireflection glass has a maximum reflectivity of less than 1% in the visible light band of 380 nm to 700 nm, and a maximum reflectivity of less than 6% in the infrared band of 700 nm to 1000 nm.

[0013] In some embodiments, when the incident angle of the antireflection glass is 50°, the maximum transmittance of the visible light band of 400nm-700nm is 90%-95%, and the maximum transmittance of the infrared light band of 700nm-1000nm is 85%-92%.

[0014] In some embodiments, the maximum ball drop height of the anti-reflection glass for impact resistance tested according to the GB / T 39814-2021 method is 95 cm to 150 cm.

[0015] In some embodiments, the antireflection glass has a breaking load of 200N-600N when tested according to the GB / T 34171-2017 method.

[0016] The second aspect of the present application provides a method for preparing the antireflection glass provided in the first aspect of the present application, the preparation method comprising:

[0017] S1. Performing a first evaporation deposition on a glass substrate to obtain a buffer layer; the buffer layer is an inorganic compound thin film layer having a porous structure;

[0018] S2. Vapor-depositing an anti-reflection film layer on the buffer layer.

[0019] In some embodiments, the gas used in the first evaporation is O2.

[0020] In some embodiments, the parameter conditions of the first evaporation include: O2 gas flow rate: 10sccm-60sccm, and evaporation rate of 0.02nm / s-0.6nm / s. In other embodiments, the O2 gas flow rate is 20sccm-50sccm, and the evaporation rate is 0.05nm / s-0.4nm / s.

[0021] In some embodiments, the first evaporation material is SiO2, Al2O3 or MgF2.

[0022] In some embodiments, the operation of evaporating the anti-reflection film layer includes alternating a second evaporation for evaporating a low refractive index layer and a third evaporation for evaporating a high refractive index layer, and in the operation of evaporating the anti-reflection film layer, the third evaporation is first performed once to make the high refractive index layer contact the buffer layer.

[0023] In some embodiments, the total number of evaporation of the second evaporation and the third evaporation is 4 to 8 times; the number of evaporation of the second evaporation and the third evaporation is independently 2 to 4 times.

[0024] In some embodiments, the evaporated material of the low refractive index layer is SiO2, Al2O3 or MgF2, and the evaporated material of the high refractive index layer is Ti3O5, Nb2O5 or Si3N4.

[0025] In some embodiments, the method further includes: performing an ion etching cleaning process on the surface of the glass substrate to obtain an ion-etched and cleaned glass substrate, and then using the ion-etched and cleaned glass substrate for the first evaporation.

[0026] A third aspect of the present application provides a housing, which includes the anti-reflection glass provided in the first aspect of the present application.

[0027] A fourth aspect of the present application provides an electronic device, which includes the housing provided by the third aspect of the present application.

[0028] Through the above technical solution, the antireflection glass of the present application includes a buffer layer with a porous structure, which can buffer the tensile deformation generated by the glass substrate when subjected to pressure, thereby reducing the tensile force transmitted to the antireflection film layer and avoiding the formation of cracks in the antireflection film layer. Moreover, even if a crack point occurs in the antireflection film layer, the porous structure in the buffer layer can prevent the crack from extending toward the glass substrate, thereby preventing the antireflection glass from breaking and improving the overall mechanical strength of the antireflection glass. At the same time, the antireflection glass of the present application has an ultra-wideband and has high transmittance in the visible light band and infrared region.

[0029] Other features and advantages of the present application will be described in detail in the subsequent detailed description.

[0030] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0032] The accompanying drawings are used to provide a further understanding of the present application and constitute a part of the specification. Together with the following detailed description, they are used to explain the present application but do not constitute a limitation of the present application. In the accompanying drawings:

[0033] FIG1 is a schematic diagram of the force acting on the antireflection glass of the present application;

[0034] FIG2 is a single-side reflection curve diagram of the antireflection glass of the present application. Specific embodiments

[0035] The following describes the specific embodiments of the present application in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present application and are not intended to limit the present application.

[0036] In related art, the use of low-refractive-index single-layer antireflection coatings has a limited antireflection wavelength range, with high transmittance only at a specific wavelength. Transmittance in other bands is very low, and wavelengths are prone to drift, making it difficult to control. Multilayer films, on the other hand, can achieve antireflection effects across a wider wavelength range. However, the multilayer antireflection coatings produced by related art have narrow bandwidths, and their transmittance and strength need to be further improved. To address this issue, this application proposes a new antireflection glass, its preparation method, and its application.

[0037] In a first aspect, the present application provides an antireflective glass, comprising a glass substrate, a buffer layer deposited on the glass substrate, and an antireflective film layer deposited on the buffer layer; the buffer layer is an inorganic compound thin film layer having a pore structure.

[0038] As shown in Figure 1, when an external force acts on the surface of the glass substrate of the anti-reflection glass, the glass substrate is subjected to pressure and tensile deformation, thereby generating tension on the anti-reflection film layer. The pore structure in the buffer layer buffers the tensile deformation of the glass substrate, reducing the tension transmitted to the anti-reflection film layer and avoiding the formation of cracks in the anti-reflection film layer. Moreover, even if a crack point occurs in the anti-reflection film layer, the pore structure in the buffer layer prevents the crack from extending toward the glass substrate, thereby preventing the anti-reflection glass from breaking and improving the overall mechanical strength of the anti-reflection glass. At the same time, the anti-reflection glass of the present application has an ultra-wideband and has high transmittance in the visible light band and infrared region.

[0039] In some embodiments of the present application, the inorganic compound thin film layer is a SiO2 thin film layer, an Al2O3 thin film layer, or a MgF2 thin film layer. For example, when the inorganic compound thin film layer of the present application is a SiO2 thin film layer, an Al2O3 thin film layer, or a MgF2 thin film layer, the inorganic compound thin film layer has a low refractive index.

[0040] In some embodiments of the present application, the antireflection film includes a low-refractive index layer and a high-refractive index layer that are alternately stacked in sequence; the low-refractive index layer is a thin film layer with a refractive index less than 1.55, and the high-refractive index layer is a thin film layer with a refractive index greater than 1.95; the high-refractive index layer is in contact with the buffer layer; the low-refractive index layer is a SiO2 thin film layer, and the high-refractive index layer is a Ti3O5 thin film layer, a Nb2O5 thin film layer, or a Si3N4 thin film layer. For example, in the present application, the low-refractive index layer is a SiO2 thin film layer, and the high-refractive index layer is a Ti3O5 thin film layer. The resulting antireflection film has high transmittance and comprehensive mechanical properties, and its hardness and strength are significantly improved.

[0041] In some embodiments of the present application, the average pore size of the buffer layer is greater than or equal to 1 nm, and the porosity is greater than 20%. In other embodiments, the main pore size of the pore structure of the present application is between 1 nm and 30 nm, for example, between 2 nm and 10 nm, and the porosity is between 20% and 60%, for example, between 30% and 50%. When the pore size of the pore structure is between 1 nm and 30 nm, and the porosity is between 20% and 60%, the buffer layer can have better buffering capacity, and better compressive and tensile strength, thereby further improving the overall mechanical strength of the anti-reflective glass.

[0042] In some embodiments of the present application, in order to reduce the reflectivity of the antireflection film layer, the number and thickness of the antireflection film layer also need to be appropriately increased. However, as the number of layers increases and the thickness increases, strength problems will arise. Therefore, the thickness of the antireflection film layer should not be too high. While meeting the requirements, the thickness of the antireflection film layer should be as low as possible to reduce the tension of the antireflection film layer to obtain better mechanical strength. For example, the total number of film layers in the present application (including the buffer layer and the antireflection film layer) is ≥ 5, and the total thickness of the film layer is less than or equal to 350nm. The total number of low refractive index layers and high refractive index layers can be 4-8 layers, the number of high refractive index layers can be 2-4 layers, the number of low refractive index layers can be 2-4 layers, and the total thickness of the low refractive index layers and high refractive index layers can be 200nm-300nm; the thickness of the buffer layer can be 10nm-30nm, for example, 15nm.

[0043] In some embodiments of the present application, as shown in Figure 2, the antireflection glass has a maximum reflectivity of less than 1% in the visible light band of 380nm-700nm and a maximum reflectivity of less than 6% in the infrared band of 700nm-1000nm. This antireflection glass reduces imaging effects and signal interference caused by high reflectivity in the infrared band, and can be further applied in lenses, VR, facial recognition, and other fields.

[0044] In some embodiments of the present application, when the incident angle of the antireflection glass is 50°, the maximum transmittance of the visible light band of 400nm-700nm is 90%-95%, and the maximum transmittance of the infrared band of 700nm-1000nm is 85%-92%.

[0045] In some embodiments of the present application, according to the GB / T 39814-2021 method test, the maximum ball drop height of the impact resistance of the antireflection glass is 95 cm-150 cm.

[0046] In some embodiments of the present application, according to the test method of GB / T 34171-2017, the breaking load of the antireflection glass is 200N-600N.

[0047] The second aspect of the present application provides a method for preparing the antireflection glass provided in the first aspect of the present application, the preparation method comprising:

[0048] S1. Performing a first evaporation deposition on a glass substrate to obtain a buffer layer; the buffer layer is an inorganic compound thin film layer having a porous structure;

[0049] S2. Vapor-depositing an anti-reflection film layer on the buffer layer.

[0050] In some embodiments of the present application, the method further includes: performing ion etching and cleaning treatment on the surface of the glass substrate to obtain an ion-etched and cleaned glass substrate, and then using the ion-etched and cleaned glass substrate for the first evaporation.

[0051] This application performs ion etching and cleaning on the surface of the glass substrate to remove dust and tiny particles on the glass, optimize the surface state of the glass substrate, improve the bonding strength with the film layer, and at the same time reduce scattering absorption, improve resistance to laser damage, and improve light transmittance.

[0052] In some embodiments of the present application, the gas used for the first evaporation is O2; the evaporation material of the first evaporation is SiO2, Al2O3 or MgF2, and the parameter conditions of the first evaporation include: the O2 gas flow rate is 10sccm-60sccm, and the evaporation rate is 0.02nm / s-0.6nm / s. In other embodiments, the O2 gas flow rate is 20sccm-50sccm, and the evaporation rate is 0.05nm / s-0.4nm / s.

[0053] In this application, SiO2, Al2O3, or MgF2 materials are selected as the vapor-deposited materials for the buffer layer. On the one hand, because of their low refractive index, they can be used with high-refractive-index materials to form a high-transmittance anti-reflection film. On the other hand, by adjusting the coating parameters, the buffer layer structure can be made looser, and its microstructure is porous. This can buffer the tensile deformation caused by the glass substrate under pressure, alleviate the tension transmitted to the anti-reflection film layer, thereby preventing the anti-reflection glass from breaking and improving the mechanical strength of the anti-reflection glass. In addition, if a high-refractive-index material is selected as the buffer layer, the high-refractive-index material itself has a high density, and the effect of adding holes to the high-refractive-index material by adjusting the coating parameters is not obvious. Even if holes are added, the mechanical strength of the anti-reflection glass cannot be improved.

[0054] In this application, by adjusting the coating parameters, the buffer layer can be formed into a porous structure and its porosity can be improved. For example, by reducing the evaporation rate, the nucleation growth rate of the evaporation material can be reduced, which is conducive to the formation of a porous structure. When the evaporation rate is slow, there are fewer critical nuclei and the growth is slow. The adsorbed atoms can fully move along the surface of the glass substrate within the average residence time, forming an island structure at a suitable growth position, and capturing flying molecules and atoms to continue growing into a buffer layer with a porous structure. In addition, a porous structure can also be formed by increasing the gas flux, reducing the vacuum degree, and other methods.

[0055] In some embodiments of the present application, the evaporation process of the antireflection coating layer includes alternating a second evaporation process for evaporating a low refractive index layer and a third evaporation process for evaporating a high refractive index layer, wherein the third evaporation process is first performed once to bring the high refractive index layer into contact with the buffer layer. The total number of evaporation processes of the second and third evaporation processes is 4 to 8 times; the number of evaporation processes of the second and third evaporation processes is independently 2 to 4 times. The evaporation material of the low refractive index layer and the evaporation material of the buffer layer are the same, both being SiO2, Al2O3, or MgF2, and the evaporation material of the high refractive index layer is Ti3O5, Nb2O5, or Si3N4.

[0056] The present application can increase the density of the antireflection film layer, improve the bonding strength and antireflection ability of the antireflection film layer by performing the second evaporation and the third evaporation.

[0057] The third aspect of the present application provides a housing, the housing comprising the antireflection glass provided in the first aspect of the present application. Specifically, part or all of the housing may be composed of the aforementioned antireflection glass.

[0058] A fourth aspect of the present application provides an electronic device, comprising the housing provided in the third aspect of the present application. The housing of the present application can be applied to an electronic device. For example, in some embodiments of the present application, the electronic device can be a mobile phone, a laptop computer, a tablet computer, a watch, a camera, a monitoring device, an AR device, or a VR device.

[0059] The present application is further illustrated below by way of examples, but the present application is not limited thereby.

[0060] Example 1

[0061] The preparation of the antireflection glass of this embodiment includes the following steps:

[0062] Ion etching cleaning process:

[0063] The glass substrate is subjected to an ion etching cleaning process.

[0064] Evaporated buffer layer:

[0065] SiO2 material is used as the evaporation material of the buffer layer, and the parameter conditions are: the gas used is O2, the O2 gas flow rate is 50 sccm, and the evaporation rate is 0.15 nm / s.

[0066] The thickness of the obtained buffer layer SiO2 is 15 nm, the average pore diameter is 2.134 nm, and the porosity is 37.82%.

[0067] Evaporation of the first antireflection coating layer:

[0068] Ti3O5 material is used as the evaporation material, and the thickness of the obtained first antireflection film layer is 13 nm.

[0069] Evaporation of the second antireflection coating layer:

[0070] SiO2 material is used as the evaporation material, and the thickness of the obtained second anti-reflection film layer is 37 nm.

[0071] Evaporation of the third antireflection film layer:

[0072] Ti3O5 material is used as the evaporation material, and the thickness of the obtained third antireflection film layer is 36 nm.

[0073] Evaporation of the fourth antireflection film layer:

[0074] SiO2 material is used as the evaporation material, and the thickness of the obtained fourth anti-reflection film layer is 25 nm.

[0075] Evaporation of the fifth antireflection coating layer:

[0076] Ti3O5 material is used as the evaporation material, and the thickness of the obtained fifth antireflection film layer is 29 nm.

[0077] Evaporation of the sixth antireflection film layer:

[0078] SiO 2 material is used as the evaporation material, and the thickness of the obtained sixth anti-reflection film layer is 98 nm.

[0079] Comparative Example 1

[0080] The preparation method of this comparative example is the same as that of Example 1, except that the parameter conditions for evaporating the buffer layer are: a mixed gas of Ar and O2 is used, the Ar gas flow rate is 50 sccm, and the O2 gas flow rate is 50 sccm.

[0081] The obtained buffer layer is dense, with small pore size and porosity.

[0082] Comparative Example 2

[0083] The preparation method of this comparative example is the same as that of Example 1, except that the buffer layer is not evaporated and the antireflection film is directly evaporated, so the antireflection glass prepared does not contain a buffer layer.

[0084] Example 2

[0085] The preparation method of this embodiment is the same as that of embodiment 1, except that the evaporation rate of the buffer layer is 0.5 nm / s. The obtained buffer layer SiO2 has a thickness of 50 nm, an average pore diameter of 7.113 nm, and a porosity of 42.537%.

[0086] Example 3

[0087] The preparation method of this embodiment is the same as that of embodiment 1, except that the evaporation rate of the buffer layer is 0.3 nm / s. The obtained buffer layer SiO2 has a thickness of 30 nm, an average pore diameter of 4.145 nm, and a porosity of 41.286%.

[0088] Example 4

[0089] The preparation method of this embodiment is the same as that of Example 1, except that the O2 gas flow rate during the evaporation of the buffer layer is 100 sccm, and the average pore size of the obtained buffer layer SiO2 is 4.279 nm, and the porosity is 40.165%.

[0090] Example 5

[0091] The preparation method of this embodiment is the same as that of Example 1, except that the O2 gas flow rate during the evaporation of the buffer layer is 55 sccm, the evaporation rate is 0.25 nm / s, and the average pore size of the obtained buffer layer SiO2 is 8.634 nm, and the porosity is 45.145%.

[0092] Example 6

[0093] The preparation method of this embodiment is the same as that of Example 1, except that the O2 gas flow rate is 65 sccm and the evaporation rate is 0.4 nm / s during the evaporation of the buffer layer. The average pore size of the obtained buffer layer SiO2 is 12.549 nm and the porosity is 53.753%.

[0094] Example 7

[0095] The preparation method of this embodiment is the same as that of embodiment 1, except that Al2O3 material is used as the evaporation material of the buffer layer during evaporation.

[0096] Example 8

[0097] The preparation method of this embodiment is the same as that of embodiment 1, except that Nb2O5 is used as the evaporation material when evaporating the first antireflection film layer, the third antireflection film layer, and the fifth antireflection film layer.

[0098] Example 9

[0099] The preparation method of this embodiment is the same as that of embodiment 1, except that Si 3 N 4 material is used as the evaporation material when evaporating the first antireflection film layer, the third antireflection film layer, and the fifth antireflection film layer.

[0100] Test Example 1

[0101] The specific surface area, pore size, and porosity of the buffer layers of the Examples and Comparative Examples were measured using methods commonly used by those skilled in the art, such as the low-temperature static nitrogen adsorption capacity method. The test results for the Examples and Comparative Examples are shown in Table 1.

[0102] Table 1

[0103] As shown in Table 1, the buffer layer in the comparative example has a relatively low average pore size and porosity, while the buffer layer in the embodiment of the present application has an average pore size greater than 1 nm and a porosity exceeding 20%, indicating a relatively high porosity. This high porosity not only provides improved buffering capacity, buffering against tensile deformation of the glass substrate, but also provides improved compressive and tensile strength, reducing the tensile force transmitted to the antireflection film, avoiding the formation of cracks in the film, and thus preventing breakage of the antireflection glass, thereby improving the overall mechanical strength of the antireflection glass.

[0104] Test Example 2

[0105] The antireflection glasses of the embodiment and comparative example were tested for impact resistance, including drop ball height, breaking load, and maximum transmittance (50° incident angle). The results are shown in Table 2.

[0106] Impact resistance test: Place the anti-reflection glass with the coating layer facing downward in a drop ball test fixture. Perform a free-fall impact test with a steel ball weighing 16g±1g. Test the glass surface at different heights, testing the center point of each glass surface. The test heights are conducted from low to high, starting at 15cm and increasing by 5cm. The test ends when a crack appears on the glass surface. The height of the steel ball at which the crack appears is recorded. After three tests, the average height of the cracks is taken.

[0107] Destruction load test: Place the antireflection glass on two supports of the fixture (support diameter is 6mm). Use two cylindrical pressure rods with a diameter of 6mm to press down on the antireflection glass. The span between the two cylindrical pressure rods is 20mm, and the span between the two supports is 40mm. The downward pressure speed is 10mm / min. Apply load to the antireflection glass until it fails. Record the failure load at the time of failure.

[0108] Maximum transmittance test: tested using a UV-visible-near-infrared spectrophotometer Carry 5000.

[0109] Table 2

[0110] As shown in Table 2, the antireflection glass of the present application can achieve a breaking load of over 200N and an impact resistance of over 95cm. When the buffer layer of the antireflection glass of the present application has a thickness of 10nm-30nm, an average pore size of 2nm-10nm, and a porosity of 30%-50%, the breaking load can reach over 220N and the impact resistance can reach over 100cm, demonstrating excellent mechanical properties. Furthermore, the antireflection glass of the present application has a high transmittance in the visible light band of 400nm-700nm at an incident angle of 50°, and also maintains a high transmittance in the infrared band of 700nm-1000nm.

[0111] The preferred embodiments of the present application are described in detail above in conjunction with the accompanying drawings. However, the present application is not limited to the specific details in the above embodiments. Within the technical concept of the present application, various simple modifications can be made to the technical solution of the present application, and these simple modifications all fall within the scope of protection of the present application.

[0112] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any appropriate manner unless there is any contradiction. In order to avoid unnecessary repetition, this application will not further describe various possible combinations.

[0113] In addition, the various implementation methods of the present application may be arbitrarily combined, and as long as they do not violate the concept of the present application, they should also be regarded as the contents disclosed in the present application.

Claims

1. An antireflection glass, characterized in that: The antireflection glass comprises a glass substrate, a buffer layer deposited on the glass substrate, and an antireflection film layer deposited on the buffer layer; The buffer layer is an inorganic compound thin film layer with a pore structure.

2. The antireflection glass according to claim 1, wherein: The thickness of the buffer layer is 10nm-30nm; The pore structure has a pore size of 1 nm to 30 nm and a porosity of 20% to 60%.

3. The antireflection glass according to claim 2, wherein: The pore structure has a pore size of 2nm-10nm and a porosity of 30%-50%.

4. The antireflection glass according to any one of claims 1 to 3, wherein: The inorganic compound thin film layer is a SiO2 thin film layer, an Al2O3 thin film layer or a MgF2 thin film layer.

5. The antireflection glass according to any one of claims 1 to 4, wherein: The antireflection film layer includes a low refractive index layer and a high refractive index layer that are alternately stacked in sequence; the low refractive index layer is a thin film layer with a refractive index less than 1.55, and the high refractive index layer is a thin film layer with a refractive index greater than 1.95; the high refractive index layer is in contact with the buffer layer; The low refractive index layer is a SiO2 thin film layer, and the high refractive index layer is a Ti3O5 thin film layer, a Nb2O5 thin film layer or a Si3N4 thin film layer.

6. The antireflection glass according to claim 5, wherein: The total number of the low refractive index layer and the high refractive index layer is 4-8 layers, the number of the high refractive index layer is 2-4 layers, the number of the low refractive index layer is 2-4 layers, and the total thickness of the low refractive index layer and the high refractive index layer is 200nm-300nm.

7. The antireflection glass according to any one of claims 1 to 6, wherein: The maximum reflectivity of the antireflection glass in the visible light band of 380nm-700nm is less than 1%, and the maximum reflectivity in the infrared band of 700nm-1000nm is less than 6%.

8. The antireflection glass according to any one of claims 1 to 7, wherein: When the incident angle of the antireflection glass is 50 degrees, the maximum transmittance of the visible light band of 400nm-700nm is 90%-95%, and the maximum transmittance of the infrared light band of 700nm-1000nm is 85%-92%.

9. The antireflection glass according to any one of claims 1 to 8, wherein: According to the GB / T39814-2021 method test, the maximum drop height of the impact resistance of the anti-reflection glass is 95cm-150cm.

10. The antireflection glass according to any one of claims 1 to 9, wherein: According to the test method of GB / T34171-2017, the breaking load of the antireflection glass is 200N-600N.

11. The method for preparing the antireflection glass according to any one of claims 1 to 10, characterized in that: The preparation method comprises: S1. Performing a first evaporation deposition on a glass substrate to obtain a buffer layer; the buffer layer is an inorganic compound thin film layer having a porous structure; S2. Vapor-depositing an anti-reflection film layer on the buffer layer.

12. The preparation method according to claim 11, wherein The gas used in the first evaporation is O2.

13. The preparation method according to claim 11 or 12, wherein The parameter conditions of the first evaporation include: an O2 gas flow rate of 10 sccm-60 sccm, and an evaporation rate of 0.02 nm / s-0.6 nm / s.

14. The preparation method according to claim 11 or 12, wherein The first evaporation material is SiO2, Al2O3 or MgF2.

15. The preparation method according to any one of claims 11 to 14, wherein The operation of evaporating the antireflection film layer includes alternately performing a second evaporation for evaporating a low refractive index layer and a third evaporation for evaporating a high refractive index layer, and in the operation of evaporating the antireflection film layer, the third evaporation is first performed once to make the high refractive index layer contact the buffer layer.

16. The preparation method according to claim 15, wherein The total number of evaporation of the second evaporation and the third evaporation is 4 to 8 times; the number of evaporation of the second evaporation and the third evaporation is independently 2 to 4 times.

17. The preparation method according to claim 15 or 16, wherein The evaporated material of the low refractive index layer is SiO2, Al2O3 or MgF2, and the evaporated material of the high refractive index layer is Ti3O5, Nb2O5 or Si3N4.

18. The preparation method according to any one of claims 11 to 17, wherein: The method further includes: performing ion etching and cleaning treatment on the surface of the glass substrate to obtain an ion-etched and cleaned glass substrate, and then using the ion-etched and cleaned glass substrate for the first evaporation.

19. A housing, characterized in that: The housing comprises the antireflection glass according to any one of claims 1 to 10.

20. An electronic device, characterized in that: The electronic device includes the housing according to claim 19.

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