Magnetron sputtering apparatus for detecting short circuit of target in time by monitoring resistance between pvd target cathode and electrical grounding in real time, and control method

Abstract

Provided in the present invention is a magnetron sputtering film deposition apparatus, a control method and a computer-readable storage medium. The present invention relates to the technical field of magnetron sputtering. The magnetron sputtering film deposition apparatus comprises a chamber, a target material, a substrate table, a magnetron, a main power supply and a resistance measurement assembly; the substrate table is arranged inside the chamber, and the substrate table and the target material are oppositely arranged; the main power supply is used for supplying power to the target material so as to form an electric field in the chamber; a grounding point and the target material are both electrically connected to the resistance measurement assembly, and the resistance measurement assembly is used for measuring the resistance between the grounding point and the target material. Since the magnetron sputtering film deposition apparatus is provided with the resistance measurement assembly, the apparatus helps a user to know the resistance between the target material and the grounding point, thereby allowing the user to conveniently detect and solve the problem of short circuit of the target material in time.

Description

Magnetron sputtering equipment and control method for timely detecting target short circuit by real-time monitoring of resistance between PVD target cathode and electrical ground Technical Field

[0001] The present invention relates to the technical field of magnetron sputtering thin film deposition, and in particular to a magnetron sputtering thin film deposition device, a control method and a computer-readable storage medium. Background Art

[0002] Magnetron sputtering is a common physical vapor deposition (PVD) process. Magnetron sputtering is often used for thin film deposition on semiconductor devices and electronic devices. The basic principle of magnetron sputtering thin film deposition is that argon gas is ionized in the thin film deposition chamber to form plasma. The argon ions (Ar + ) fly toward the target under the influence of the electric field and sputter atoms from the target. The sputtered target atoms are then deposited on the substrate to form a thin film. The magnetic field's confinement of charged particles increases the plasma density near the target surface, thereby increasing the sputtering rate. To create the electric field, during thin film deposition, the target is negatively charged, acting as the cathode, while the inner wall of the thin film deposition chamber is grounded.

[0003] Target short circuiting is a common problem in magnetron sputtering thin film deposition. If a target short circuit occurs, arcing may occur on the target surface or target backing plate. This arcing can cause localized overheating or even melting of the target. Once the target melts, large target particles may fall onto the substrate, affecting the quality of the thin film deposition and potentially damaging the integrated circuits (ICs) on the substrate. Arcing on the target backing plate can also negatively impact the repeatability and stability of thin film deposition. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a magnetron sputtering thin film deposition device that can detect whether a target material is short-circuited, so that a user can promptly detect the problem of a target material short-circuit.

[0005] The present invention also provides a control method for controlling the magnetron sputtering thin film deposition equipment.

[0006] The present invention also provides a computer-readable storage medium.

[0007] According to an embodiment of the first aspect of the present invention, a magnetron sputtering thin film deposition device includes: a thin film deposition chamber, which is provided with a target material mounting position; a substrate stage, located inside the thin film deposition chamber, the substrate stage is used to carry a substrate, and the substrate stage is arranged opposite to the target material arranged at the target material mounting position; a magnetron; a main power supply, which is electrically connected to the target material, and the main power supply is used to supply power to the target material to form an electric field inside the thin film deposition chamber, the electric field and the magnetic field generated by the magnetron on the target material surface can convert at least a part of the working gas in the thin film deposition chamber into plasma, and the electric field can cause a part of the ions in the plasma to move toward the target material; a resistance detection component, the electrical ground point and the target material are both electrically connected to the resistance detection component, and the resistance detection component is used to detect the resistance between the electrical ground point and the target material.

[0008] The magnetron sputtering thin film deposition device according to the first embodiment of the present invention has at least the following beneficial effects: the resistance detection component is used to detect the resistance value between the target material and the grounding point in the low potential and high potential states, R 1L , R 1H The resistance between the target and the electrical grounding point can reflect whether the target is short-circuited. If this resistance is too small, a short circuit may occur between the target and the grounding point. Since the magnetron sputtering thin film deposition device of the present invention has a resistance detection component, the device allows the user to easily know the resistance between the target and the grounding point, thereby facilitating the user to promptly detect a target short circuit.

[0009] According to some embodiments of the present invention, the negative pole of the main power supply is electrically connected to the target material, and the positive pole of the main power supply and the inner wall surface of the thin film deposition chamber are grounded; the resistance detection component includes a measuring power supply and a resistance display meter connected in series with each other, the resistance detection component and the main power supply are connected in parallel between the electrical ground point and the target material, and the resistance display meter is used to display the resistance value between the electrical ground point and the target material according to the current flowing through the resistance display meter.

[0010] According to some embodiments of the present invention, the resistance detection component further includes a protection switch, and the protection switch, the measuring power supply, and the resistance display meter are connected in series; when the protection switch is in a closed state, the resistance detection component forms a branch circuit that allows current to pass through; when the protection switch is in an open state, the branch circuit is disconnected.

[0011] According to a second aspect of the present invention, a magnetron sputtering control method is used to control the magnetron sputtering thin film deposition device according to the first aspect of the present invention. The magnetron sputtering control method includes the following steps: when the main power supply does not supply power to the target, obtaining the resistance value R between the target and the ground point in a low potential state. 1Land the resistance value R between the target and the ground point in the high potential state 1H If R 1L or R 1H If the resistance is less than or equal to the preset value, an alarm message will be issued.

[0012] The magnetron sputtering control method according to the second embodiment of the present invention has at least the following beneficial effects: it can remind the user when the resistance between the target material and the grounding point is too small, so that the user can promptly discover the short circuit of the target material.

[0013] According to some embodiments of the present invention, the preset resistance value is R0, the impedance value of the plasma is R2, and R0>100R2; more preferably, R0>1000R2.

[0014] According to some embodiments of the present invention, the magnetron sputtering control method further comprises the following steps: if R 1L and R 1H If the resistance value is greater than the preset resistance value, the magnetron sputtering thin film deposition device is controlled to perform thin film deposition on the substrate.

[0015] According to some embodiments of the present invention, the magnetron sputtering thin film deposition equipment also includes a vacuum pump and a flow meter, and controlling the magnetron sputtering thin film deposition equipment to perform thin film deposition on the substrate includes: controlling the flow meter to turn on after the vacuum degree of the thin film deposition chamber is qualified; and controlling the main power supply to supply power to the target material.

[0016] According to some embodiments of the present invention, controlling the magnetron sputtering thin film deposition equipment to perform thin film deposition on the substrate includes: controlling the main power supply to supply power to the target material; before controlling the main power supply to supply power to the target material, disconnecting the connection between the resistance detection component and the main power supply, and during the process of performing thin film deposition on the substrate, controlling the resistance detection component and the main power supply to remain disconnected from each other.

[0017] According to some embodiments of the present invention, the magnetron sputtering control method further includes the following steps: obtaining the vacuum degree in the thin film deposition chamber, and judging whether the vacuum in the thin film deposition chamber is broken according to the vacuum degree; if the vacuum in the thin film deposition chamber is broken and the target material is exposed to atmospheric pressure and is in danger of being touched, then controlling the target material to be grounded.

[0018] According to the computer-readable storage medium of the third aspect embodiment of the present invention, the computer-readable storage medium stores computer-executable instructions, and the computer-executable instructions are used to enable a computer to execute the magnetron sputtering control method as described in the second aspect embodiment.

[0019] The beneficial effects of the computer-readable storage medium according to the third embodiment of the present invention are the same as those of the magnetron sputtering control method according to the second embodiment, and are not described again here.

[0020] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present invention will be further described below with reference to the accompanying drawings and embodiments, in which:

[0022] FIG1 is a schematic diagram of a magnetron sputtering thin film deposition device in the prior art;

[0023] FIG2 is a schematic diagram of a magnetron sputtering thin film deposition apparatus according to an embodiment of the present invention;

[0024] Figure 3 is a HIPOT high voltage test circuit diagram;

[0025] FIG4 is a schematic diagram of the working process of the magnetron sputtering thin film deposition equipment according to an embodiment of the present invention.

[0026] Figure markings: 10-magnetron sputtering thin film deposition equipment, 12-thin film deposition chamber, 14-substrate stage, 16-main power supply, 18-target material, 20-flow meter, 22-vacuum pump, 24-magnetron assembly, 26-substrate, 28-top cover, 30-insulating block, 32-upper shield plate, 34-lower shield plate, 36-substrate pressing plate, 38-electrical grounding point, 40-resistance detection assembly, 42-power supply for measurement, 44-resistance display meter, 46-protective resistor, 48-protection switch. DETAILED DESCRIPTION

[0027] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0028] In the description of the present invention, it should be understood that descriptions involving orientation, such as the orientation or positional relationship indicated by up, down, etc., are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0029] In the description of this invention, "above," "below," and "within" are understood to be exclusive of the number indicated. The terms "first" and "second" are used solely to distinguish technical features and are not to be construed as indicating or implying relative importance, or as implicitly specifying the number or order of the technical features indicated.

[0030] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, and connecting should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0031] Before introducing the magnetron sputtering thin film deposition apparatus 10 of the present invention, a prior art magnetron sputtering thin film deposition apparatus 10 is first described. FIG1 illustrates a prior art magnetron sputtering thin film deposition apparatus 10. As shown in FIG1 , the magnetron sputtering thin film deposition apparatus 10 includes a chamber 12, a substrate stage 14, a main power supply 16, a target 18, a flowmeter 20, a vacuum pump 22, and a magnetron assembly 24. Furthermore, in FIG1 , the substrate 26 and the target 18 are already installed in the magnetron sputtering thin film deposition apparatus 10.

[0032] As shown in Figure 1, a target mounting position is provided inside the cavity 12. The target 18 mounting position is a part of the interior of the thin film deposition cavity 12. After the target 18 is set at the target mounting position, the target 18 will be arranged opposite to the substrate stage 14. The substrate stage 14 is used to carry the substrate 26, and the target 18 is arranged directly above the substrate stage 14. The magnetron assembly 24 can be set as a magnetron, and the magnetron assembly 24 is arranged above the target 18, that is, the magnetron assembly 24 is located on the side of the target 18 facing away from the substrate stage 14. The magnetron assembly 24 can also move relative to the target 18 under the drive of a driving device (the driving device is not shown). The function of the magnetron assembly 24 will be described in detail below. A removable top cover 28 is provided on the top of the thin film deposition cavity 12 to facilitate the user to open the thin film deposition cavity 12, thereby facilitating the user to replace the target 18, repair the magnetron sputtering thin film deposition equipment 10, and replace parts in the equipment. A sealing ring (not shown) may be provided between the thin film deposition chamber 12 and the top cover 28 to prevent the thin film deposition chamber 12 from communicating with the atmosphere.

[0033] The target 18 is generally an electrical conductor. The main power supply 16 is electrically connected to the target 18, which is positioned at the target mounting position, via a conductive wire. The main power supply 16 is capable of supplying power to the target 18. In FIG1 , the main power supply 16 is configured as a DC main power supply, with the negative terminal of the main power supply 16 connected to the target 18 and the positive terminal of the main power supply 16 grounded. The inner wall of the thin film deposition chamber 12 is also grounded. Thus, when the main power supply 16 supplies power to the target 18, an electric field is formed between the target 18 and the inner wall of the thin film deposition chamber 12. The substrate stage 14 for supporting the substrate 26 can be grounded or electrically suspended.

[0034] A flow meter 20 is connected to the thin film deposition chamber 12 and can be connected to an external gas source. The external gas source, not shown in the accompanying drawings, is a container storing a working gas and is connected to the flow meter 20 via a pipeline. The process gas can be argon. When the flow meter 20 is turned on, the process gas can be delivered into the thin film deposition chamber 12; the flow meter 20 can also be used to adjust the flow rate of the working gas.

[0035] As shown in FIG1 , a vacuum pump 22 is connected to the thin film deposition chamber 12 and is used to evacuate gases (including air, process gases, etc.) from the thin film deposition chamber 12. During the process of thin film deposition on the substrate 26 by the magnetron sputtering thin film deposition apparatus 10, the interior of the thin film deposition chamber 12 is isolated from the atmospheric environment, and the interior of the thin film deposition chamber 12 is vacuumed. The vacuum pump 22 can evacuate gases from the thin film deposition chamber 12, thereby achieving a vacuum state in the thin film deposition chamber 12 and maintaining the vacuum level in the thin film deposition chamber 12 within an appropriate range.

[0036] The magnetron sputtering thin film deposition device 10 also includes an insulating block 30 and a shield. The shield is detachably mounted inside the thin film deposition chamber 12 and is replaceable. The shield covers a portion of the inner wall of the thin film deposition chamber 12 to prevent atoms sputtered from the target material 18 from adhering to the inner wall of the thin film deposition chamber 12. In FIG1 , two shields are provided, namely an upper shield 32 and a lower shield 34. The substrate pressing plate 36 presses the periphery of the substrate 26 during thin film deposition. The insulating block 30 is made of an insulating material, the bottom surface of the insulating block 30 contacts the upper shield 32, and the top surface of the insulating block 30 contacts the edge of the target material 18. The insulating block 30 supports the edge of the target material 18 and separates the upper shield 32 from the target material 18. The shield can be grounded or ungrounded. The positive pole of the main power supply is grounded, and the positive pole is connected to the electrical ground point 38.

[0037] The working principle of the magnetron sputtering thin film deposition equipment 10 in Figure 1 is as follows. After the process gas, such as argon, is introduced into the thin film deposition chamber 12, the main power supply 16 supplies power to the target 18, thereby generating an electric field inside the thin film deposition chamber 12, which ionizes at least a portion of the argon gas. Specifically, under the action of the electric field and the magnetic field, the electrons make a spiral motion on the surface of the target, or move from the target 18 to the substrate 26 or the mask. During the movement of the electrons, the electrons collide with the argon atoms, thereby ionizing the argon atoms to produce argon ions (Ar + ) and new electrons. Under the action of the electric field, the positively charged argon ions move toward the target material 18 and bombard the surface of the target material 18, causing the target material 18 to sputter. The sputtered neutral atoms (neutral target atoms) or the sputtered atoms that are ionized while passing through the plasma will be deposited on the substrate 26, thereby forming a thin film on the surface of the substrate 26. The electrons generated during sputtering are used to form and maintain plasma on the surface of the target material 18, thereby allowing the above-mentioned process of argon ionization and argon ion bombardment of the target material 18 to be repeated, thereby achieving continuous magnetron sputtering thin film deposition.

[0038] The electrons generated when the target 18 is sputtered, the electrons generated when argon atoms are ionized, and the electrons generated when sputtered neutral atoms are ionized are all affected by the electric and magnetic fields, resulting in a drift in the direction indicated by E (electric field) × B (magnetic field) (abbreviated as E × B drift). The motion trajectory of the drifting electrons approximates a cycloid. If the magnetic field provided by the magnetron assembly 24 is a circular magnetic field, the electrons will perform a circular spiral motion on the target surface with a motion trajectory that approximates a cycloid. The motion path of these electrons is not only very long, but also confined to the plasma region near the surface of the target 18. In this region, argon atoms ionize into a large number of argon ions, which bombard the target 18, thereby achieving a high deposition rate. As the number of collisions increases, the energy of the electrons is exhausted, gradually moving away from the surface of the target 18, and finally deposited on the substrate 26 under the action of the electric field. Because the energy of these electrons is very low, the energy transferred to the substrate 26 by the electrons is very small, and the temperature rise of the substrate 26 during the thin film deposition process is relatively low.

[0039] As mentioned above, the target 18 is connected to the electrically grounded cavity through the insulating block 30. Under normal circumstances, the target is electrically suspended, but it is possible for a short circuit to occur, that is, there is leakage between the target 18 and the electrical ground. The main reasons for the target 18 short circuit are as follows:

[0040] (1) The conductive film deposited on the shield is detached, and the detached conductive film or the whiskers in the conductive film just connect the target material 18 and the shield. If the shield is grounded, this will cause the target material 18 to short-circuit.

[0041] (2) A sufficiently thick conductive film is deposited on the surface of the insulating block 30 , and the conductive film on the insulating block 30 connects the target 18 and the adjacent ground shield, thereby causing the target 18 to be short-circuited.

[0042] (3) The deformed target 18 may come into contact with an adjacent shielding plate (the shielding plate may be grounded), thereby causing a short circuit in the target 18. Specifically, the pressure on the target 18 in a vacuum environment is different from that in an atmospheric environment. In an atmospheric environment, the shape of the target 18 may be normal, but the target 18 may be deformed in a vacuum environment. In addition, the target 18 may also be deformed due to temperature changes, that is, the target 18 will expand and contract due to heat.

[0043] (4) The magnetron sputtering thin film deposition apparatus 10 is also provided with a cooling water pipe (not shown) for cooling the back of the target 18; alternatively, the target back plate is directly cooled by water from a cooling water tank, the cooling effect of which is enhanced by the rotation of the magnetron immersed in the water. If the cooling water is not sufficiently deionized, or if the target 18 is corroded after contact with the cooling water, the resistivity of the cooling water decreases, or the conductivity of the water increases. Furthermore, since the cooling water pipe has a grounding connection, the target 18 may be indirectly grounded through the cooling water and the cooling water pipe, thereby causing the target 18 to short-circuit.

[0044] (5) The wires or other conductive parts (such as screws) in the magnetron sputtering thin film deposition equipment 10 accidentally connect the target material 18 to a grounded component, causing the target material 18 to short-circuit.

[0045] It should be noted that the above reasons are not the only ones that may cause a short circuit in the target material 18, and the present invention does not enumerate all possible causes of a short circuit in the target material 18. However, regardless of the cause of the short circuit in the target material 18, when the target material 18 short-circuits and main power is applied to the target material 18, an arc may occur on the surface of the target material 18, causing the target material 18 to locally overheat or even melt. After the target material 18 melts, large particles of the target material 18 may fall onto the substrate 26, which not only affects the quality of the thin film deposited on the substrate 26 but may also damage the integrated circuit on the substrate 26.

[0046] Therefore, in order to reduce the impact of the short circuit of the target material 18 on the thin film deposition, the present invention proposes a magnetron sputtering thin film deposition device 10. As shown in Figure 2, the magnetron sputtering thin film deposition device 10 also includes a thin film deposition chamber 12, a substrate stage 14, a main power supply 16, a target material 18, a flow meter 20, a vacuum pump 22, a magnetron assembly 24, a substrate 26, a top cover 28, an insulating block 30, an upper mask plate 32, a lower mask plate 34, a substrate pressure plate 36, an electrical grounding point 38, etc. The functions of these components will not be repeated. Compared with the prior art, the magnetron sputtering thin film deposition device 10 of the present invention also includes a resistance detection component 40. The electrical grounding point 38 and the target material 18 set at the target material mounting position are both electrically connected to the resistance detection component 40, and the resistance detection component 40 is used to detect the resistance between the grounding point 38 and the target material 18. The resistance between the target 18 and the grounding point 38 can reflect whether the target 18 is short-circuited. If this resistance is too small, a short circuit may occur between the target 18 and the electrical grounding point 38. Since the magnetron sputtering thin film deposition apparatus 10 of the present invention includes a resistance detection component 40, the device allows the user to easily know the resistance between the target 18 and the grounding point 38, thereby facilitating the user to promptly detect a short circuit in the target 18.

[0047] In the embodiment shown in Figure 2, the resistance detection component 40 includes a measuring power supply 42 and a resistance display meter 44 connected in series, and the resistance detection component 40 and the main power supply 16 are connected in parallel between the electrical ground point 38 and the target material 18. The measuring power supply 42 can be set as a dry cell battery. The resistance display meter 44 is used to display the resistance value between the ground point 38 and the target material 18 according to the current flowing through the resistance display meter 44. The resistance display meter 44 itself has a certain resistance. The resistance display meter 44 may include a dial and a rotatable pointer, and the scale indicated by the pointer is the measured resistance value. The current value flowing through the resistance display meter 44 corresponds one-to-one to the measured resistance value. As the current flowing through the resistance display meter 44 changes, the angle of the pointer will also change. In other embodiments, the dial can also be replaced by a screen that can display a scale. The dial or screen can be located outside the thin film deposition chamber 12 so that the user can directly see the resistance value.

[0048] As shown in FIG2 , the resistance detection assembly 40 further includes a protective resistor 46, a measurement power supply 42, and a resistance display meter 44. The resistance display meter 44 and the protective resistor 46 are connected in series to prevent excessive current from flowing through the resistance display meter 44 and damaging the resistance display meter 44.

[0049] As shown in Figure 2, the resistance detection component 40 also includes a protection switch 48, a measuring power supply 42, a resistance display meter 44, and a protection resistor 46. The protection resistor 46 and the protection switch 48 are connected in series. When the protection switch 48 is in a closed state, the resistance detection component 40 forms a branch that allows current to pass through; when the protection switch 48 is in an open state (i.e., the state shown in Figure 2), the branch is disconnected, and no current passes through the resistance display meter 44. The advantage of providing the protection switch 48 is that the resistance detection component 40 can be disconnected from the main power supply 16 to prevent damage to the resistance detection component 40. Specifically, during a normal thin film deposition process (the target material 18 is not short-circuited), there is a large potential difference between the target material 18 and the electrical ground point 38, and the current between the target material 18 and the electrical ground point 38 is large. If the resistance detection component 40 is still connected to the main power supply 16 during a normal thin film deposition process, a large current will pass through the resistance display meter 44, and the resistance display meter 44 may be burned.

[0050] The resistance detection assembly 40 shown in FIG2 uses an ohmmeter method to detect the resistance between the connection point 38 and the target material 18. This method is simple and convenient, and accordingly, the cost of the resistance detection assembly 40 is also low. In other embodiments not shown in the figure, the resistance can also be measured by a voltmeter-ammeter method, a resonance method, a DC bridge method, a digital ohmmeter method, etc. Taking the DC bridge method as an example, the circuit between the target material 18 and the electrical grounding point 38 and the resistance detection assembly 40 can form a Wheatstone bridge or a Kelvin bridge. If a digital ohmmeter valve is used to measure the resistance, then the resistance detection assembly 40 is set to a digital ohmmeter.

[0051] Because the target material 18 is powered and has a high negative voltage during thin film deposition, the target material cannot have other leakage / short circuit paths under high voltage except for forming an electrical loop through the plasma and the electrical ground. Therefore, it is more necessary to use HIPOT to measure the resistance under high voltage. Sometimes, the resistance is very high under low voltage and there is no sign of short circuit; but the resistance measured under high voltage is low, indicating that the insulating material between the target material and the electrical ground is broken down under high voltage. The resistance R between the target material 18 and the electrical ground point 38 under high voltage is detected by using HIPOT (high potential test). 1H , while the resistance between the target 18 and the electrical ground 38 detected at low voltage (several volts, the absolute value of the voltage is less than 10) is R 1L. Accordingly, the resistance detection component 40 in Figure 2 can be set as a HIPOT tester. When the equipment is performing thin film deposition, the target material 18 is applied with power and has a very high negative voltage; except for forming a loop with the electrical ground point 38 through the plasma, the target material 18 cannot have other leakage or short-circuit paths under high voltage, otherwise it will affect the quality of thin film deposition and the safety of thin film deposition production. Therefore, in order to ensure the quality of thin film deposition and the safety of the production process, it is very necessary to measure the resistance between the target material 18 and the electrical ground point 38 under high voltage, and the test results under high voltage have important reference value. The high voltage can be the test voltage during the HIPOT test mentioned below.

[0052] The HIPOT test is used to check for "good insulation" to ensure that no current flows from one point to another (and the voltage is increased to ensure that no current flows). The HIPOT test is a non-destructive test used to determine whether the electrical insulation is sufficient to withstand normal overvoltage transients. The HIPOT withstand voltage test circuit diagram, shown in Figure 3, is a high-voltage test that tests the device for a specific time to ensure that the insulation is not in a critical state. High-voltage withstand testing can help detect cracked or crushed insulation, pinhole defects in the insulation layer, conductive or corrosive contaminants around the insulation, and tolerance errors in the cable, among other things. The HIPOT tester connects one end of the power supply to ground and the other end to the conductor being tested (target 18). During the test, the standard test voltage can be "2× operating voltage + 1000V," but in the case of PVD equipment, the test voltage can be selected as the starting voltage of the PVD equipment; the test time can be 1 minute. The operating voltage refers to the voltage between the target 18 and the electrical ground point 38 when the equipment is performing normal thin film deposition. Most safety standards allow the use of AC or DC voltage for withstand voltage testing. When using an AC test voltage, the insulation in question is most stressed when the voltage is at its peak, that is, at the positive or negative peak of the sine wave. Therefore, if a DC test voltage is used, it is necessary to ensure that the DC test voltage is within the range of the AC test voltage. (or 1.414) times or less, so the DC voltage value is equal to the peak AC voltage. For example, for a 500V AC voltage, the equivalent DC voltage that produces the same stress on the insulation is 500 x 1.414, or 707V DC. Whether AC or DC voltage is used for the withstand voltage test, the same voltage type as during normal operation should be used.

[0053] A PVD device passes this test if the measured leakage current is below the maximum allowable current according to the applicable standard, or if no breakdown occurs (i.e., no sudden and uncontrolled current flow). The measured leakage current can be converted to resistance. The instrument should be able to measure the phase angle of the leakage current using capacitive coupling detection. Some standards allow for separate measurement of phase and quadrature currents. Leakage current due to capacitive coupling may not be a safety concern.

[0054] It should be noted that when a high voltage is applied to the target material using HIPOT, since no process gas flows in the vacuum chamber 12 , there will be no ignition in the chamber, no plasma will be generated, and no thin film will be deposited.

[0055] The present invention also provides a magnetron sputtering control method for controlling the magnetron sputtering thin film deposition apparatus 10 according to any embodiment of the present invention. The magnetron sputtering thin film deposition apparatus 10 further includes a controller (not shown), a resistance detection assembly 40, a main power supply 16, a flow meter 20, a vacuum pump 22, and other components, all of which are communicatively connected to the controller. The steps of the magnetron sputtering control method described below can all be performed by the controller.

[0056] The magnetron sputtering control method comprises the following steps: when the main power supply 16 does not supply power to the target 18, respectively obtaining the resistance R between the target 18 and the electrical ground 38 at low voltage and high voltage. 1L , R 1H If R 1L or R 1H If the resistance is less than or equal to the preset value, an alarm message will be issued.

[0057] The preset resistance value is a pre-set value. 1L or R 1H When the resistance value is less than or equal to the preset value, it can be considered that R 1L or R 1H The target material 18 is short-circuited. The alarm information sent by the controller can be text information, voice information, image information, etc. For example, in one embodiment, the magnetron sputtering thin film deposition device 10 also includes a display screen, and the controller is communicatively connected to the display screen. The alarm information sent by the controller can be sent to the display screen, and the display screen displays the information. The alarm information displayed on the display screen can be text such as "target short circuit". Alternatively, the magnetron sputtering thin film deposition device 10 includes a buzzer, and the controller is communicatively connected to the buzzer. The buzzer can make a sound according to the information sent by the controller, thereby reminding the user.

[0058] In R 1L or R 1HWhen the resistance value is less than or equal to the preset resistance value, the resistance value measured by the resistance detection component 40 can reflect the cause of the failure of the magnetron sputtering thin film deposition device 10 to a certain extent. For example, if the resistance between the target 18 and the electrical ground point 38 is between a few tenths of an ohm and a few ohms (i.e., R 1L and R 1H is greater than zero and less than 10 ohms), then it may be because the target 18 accidentally contacts the grounded shield. 1L and R 1H If the resistance is above 100 ohms, the situation described in the above reason (4) may have occurred. The user can use the measured R 1L and R 1H The specific value of can be used to roughly determine the cause of the failure of the magnetron sputtering thin film deposition device 10.

[0059] The magnetron sputtering control method may further include the following steps: if R 1L and R 1H When R is greater than the preset resistance value, the magnetron sputtering thin film deposition device 10 is controlled to perform thin film deposition on the substrate 26. 1L and R 1H When the resistance is greater than the preset resistance value, it can be considered that the target 18 is not short-circuited. Therefore, the magnetron sputtering thin film deposition apparatus 10 can normally perform thin film deposition on the substrate 26. The steps of "controlling the magnetron sputtering thin film deposition apparatus 10 to perform thin film deposition on the substrate 26" may include: after the vacuum level of the thin film deposition chamber 12 is qualified, moving the substrate stage 14 to the thin film deposition process position, controlling the flow meter 20 to turn on, and controlling the main power supply 16 to supply power to the target 18.

[0060] In one embodiment, if the preset resistance value is recorded as R0 and the impedance of the plasma is recorded as R2, then R0 can satisfy: R0>100R2. More preferably, R0 can also satisfy: R0>1000R2. The larger R0 is, the better. 1L and R 1H >R0>100R2, R 1L and R 1H Greater than the preset resistance value, R 1L and R 1H Much larger than the plasma impedance R2. 1L and R 1H Whether the target 18 has a high short circuit risk is determined by whether the impedance R2 is much greater than the plasma impedance R2. The plasma impedance is usually between a few ohms, tens of ohms, and hundreds of ohms.

[0061] Assume that the total impedance between the target 18 and the electrical ground 38 during the film deposition process is R T , 1 / RT =1 / R 1H +1 / R2, R 1H is the impedance between the target 18 and the electrical ground 38 when there is no plasma and the target voltage is similar to that during thin film deposition, that is, the impedance measured by the HIPOT when a high voltage is applied to the target; R2 is the impedance of the plasma, and these two impedances are connected in parallel between the target 18 and the ground 38. It is generally expected that R T Close to R2, so that close to 100% of the current passes through the plasma. 1H When it is much larger than R2, 1 / R 1H can be ignored, at this time 1 / R T =1 / R2.

[0062] In the case where the target 18 and the electrical ground 38 are not short-circuited, R 1L and R 1H >R0, the larger R0 is, the 1L and R 1H The resistance detection component 40 is configured as a HIPOT tester and the resistance between the target 18 and the electrical ground point 38 is R 1H Therefore, in the absence of a short circuit between the target 18 and the electrical ground 38, R 1L and R 1H The larger the 1 / R T The closer it is to 1 / R2. This is R 1L , R 1H , and the reason why the larger the R0, the better.

[0063] In some embodiments, the magnetron sputtering control method may further include: disconnecting the connection between the resistance detection component 40 and the main power supply 16 before controlling the main power supply 16 to supply power to the target material 18; and controlling the resistance detection component 40 and the main power supply 16 to remain disconnected from each other during the process of the device performing sputtering thin film deposition on the substrate 26.

[0064] Disconnecting the resistance detection assembly 40 from the main power supply 16 means that the main power supply 16 cannot form a circuit with the resistance detection assembly 40. For example, as shown in Figure 2, the protection switch 48 of the resistance detection assembly 40 is in the off state, thereby isolating the resistance detection assembly 40 from the main power supply 16. In this state, even if the main power supply 16 is supplying power to the target 18, the high current generated by the main power supply 16 will not flow through the resistance meter 44, and the resistance display meter 44 is less likely to be damaged.

[0065] In some embodiments, the magnetron sputtering thin film deposition apparatus 10 includes a vacuum gauge (not shown) for measuring the vacuum level in the thin film deposition chamber 12. The vacuum gauge is communicatively connected to a controller. The magnetron sputtering control method may further include the following steps: obtaining the vacuum level in the thin film deposition chamber 12; determining whether the vacuum in the thin film deposition chamber 12 is broken based on the vacuum level; and if so, grounding the target 18 by the controller.

[0066] Among them, "obtaining the vacuum degree in the thin film deposition chamber 12" means that the controller receives the measurement result from the vacuum gauge, and the controller compares the measurement result with a preset vacuum degree value. If the measurement result is greater than the preset vacuum degree value, it can be considered that the vacuum in the thin film deposition chamber 12 is broken.

[0067] When the user opens the thin film deposition chamber 12, the interior of the thin film deposition chamber 12 is connected to the atmospheric environment, the vacuum environment of the thin film deposition chamber 12 is broken, and the air pressure in the thin film deposition chamber 12 is substantially the same as the atmospheric pressure. After opening the thin film deposition chamber 12, the user may attempt to replace the target 18. At this time, because the vacuum environment of the thin film deposition chamber 12 is broken, the target 18 is grounded, and the main power supply 16 cannot supply power to the target 18. This makes it less likely that the user will suffer an electric shock when replacing the target 18, and the user is safer when replacing the target 18.

[0068] The above method can also be understood as the controller intentionally short-circuiting the target 18 when the vacuum in the thin film deposition chamber 12 is broken. The circuitry used to implement this function is not shown in the accompanying drawings. The circuit for intentionally short-circuiting the target can be configured as follows: one end of the circuit is connected to the target 18, and the other end is connected to the electrical ground 38. The circuit is provided with a switch. When the switch is closed, the target 18 and the electrical ground 38 are short-circuited through the circuit.

[0069] Based on the magnetron sputtering control method described above, the working process of the magnetron sputtering thin film deposition device 10 is shown in FIG4 . First, in the first step 50 , before the main power supply 16 supplies power to the target 18 , the controller monitors the resistance value R between the target 18 and the electrical ground 38 in real time through the resistance detection component 40 . 1L and R 1H In step 52, R 1L and R 1H Far exceeds the plasma impedance (R 1L and R 1H >R0>100R2), then the film deposition can proceed normally. 1L or R 1H If the target material 18 is not high enough, the control system will remind the user to solve the problem of short circuit of the target material 18, and the magnetron sputtering thin film deposition device 10 cannot perform thin film deposition. In step 56, the problem of short circuit of the target material 18 is solved, and R1L and R 1H This far exceeds the plasma impedance. In step 58, the control system confirms that the magnetron sputtering thin film deposition apparatus 10 is ready for thin film deposition. In step 60, before thin film deposition begins, the resistance detection assembly 40 is disconnected. After thin film deposition is complete and before the next thin film deposition, the control system returns to step 50 and restarts the next round of control steps. The protection switch 48 of the resistance detection assembly 40 is closed, and the resistance detection assembly 40 continues to monitor the resistance between the target 18 and the ground point 38.

[0070] The present invention also provides a computer-readable storage medium storing computer-executable instructions for causing a computer to execute the magnetron sputtering control method described in any of the above embodiments. It will be understood by those skilled in the art that computer-readable storage media include, but are not limited to, RAM, ROM, EEPROM, flash memory or other memory technologies, CD-ROM, digital versatile disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tapes, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to store desired information and can be accessed by a computer.

[0071] In the description of the present invention, reference to terms such as "one embodiment," "some embodiments," or "examples" means that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Claims

1. Magnetron sputtering thin film deposition equipment, characterized in that, include: The thin film deposition chamber has mounting positions for the target and substrate stage; A target material is located at a target material installation position inside the thin film deposition chamber; A substrate stage is located inside the thin film deposition chamber, the substrate stage is used to carry a substrate, and the substrate stage is arranged opposite to the target material arranged at the target material installation position; Magnetron, used to generate a magnetic field on the target surface, confine electrons, and help ignite and maintain plasma; a main power supply, configured to be electrically connected to the target, the main power supply being configured to supply power to the target so as to form an electric field inside the thin film deposition chamber, wherein the electric field and the magnetic field generated by the magnetron on the target surface are capable of converting at least a portion of the working gas in the thin film deposition chamber into plasma, and the electric field is capable of causing a portion of ions in the plasma to move toward the target; A resistance detection component is provided, wherein the electrical ground point and the target material are both electrically connected to the resistance detection component, and the resistance detection component is used to detect the resistance between the electrical ground point and the target material.

2. The magnetron sputtering thin film deposition device according to claim 1, characterized in that: The negative electrode of the main power supply is electrically connected to the target material, and the positive electrode of the main power supply and the inner wall surface of the thin film deposition chamber are grounded; The resistance detection component includes a measuring power supply and a resistance display meter connected in series, the resistance detection component and the main power supply are connected in parallel between the ground point and the target material, and the resistance display meter is used to display the resistance value between the ground point and the target material according to the current flowing through the resistance display meter; The resistance detection assembly is configured to measure the resistance between the target and the electrical ground at a low potential, and / or to measure the resistance between the target and the electrical ground at a high voltage.

3. The magnetron sputtering thin film deposition device according to claim 2, characterized in that: The resistance detection component further includes a protection switch, wherein the protection switch, the measurement power supply and the resistance display meter are connected in series; When the protection switch is in a closed state, the resistance detection component forms a branch path that allows current to pass; When the protection switch is in the off state, the branch circuit is disconnected.

4. A control method, characterized in that: Used to control the magnetron sputtering thin film deposition equipment according to any one of claims 1 to 3, the control method comprises the following steps: When the main power supply does not supply power to the target, the resistance value R between the target and the ground point in the low potential state is obtained. 1L and the resistance value R between the target and the ground point in the high potential state 1H ; When R 1L or R 1H When the resistance is less than or equal to the preset value, an alarm message will be issued.

5. The control method according to claim 4, characterized in that: The preset resistance value is R0, the impedance value of the plasma is R2, and R0>100R2.

6. The control method according to claim 5, characterized in that: R0>1000R2.

7. The control method according to claim 4, characterized in that: The control method further comprises the following steps: 1L and R 1H If the resistance value is greater than the preset resistance value, the magnetron sputtering thin film deposition device is controlled to perform thin film deposition on the substrate.

8. The control method according to claim 7, characterized in that: The magnetron sputtering thin film deposition device further includes a vacuum pump and a flow meter, and controlling the magnetron sputtering thin film deposition device to perform thin film deposition on the substrate includes: After the vacuum degree of the thin film deposition chamber is qualified, controlling the flow meter to open; The main power supply is controlled to supply power to the target.

9. The control method according to claim 4, characterized in that: The controlling the magnetron sputtering thin film deposition device to perform thin film deposition on the substrate includes: controlling the main power supply to supply power to the target; Before controlling the main power supply to energize the target material, the connection between the resistance detection component and the main power supply is disconnected, and during the thin film deposition process on the substrate, the resistance detection component and the main power supply are controlled to remain disconnected from each other.

10. The control method according to claim 4, characterized in that: The control method further comprises the following steps: Acquiring a vacuum degree in the thin film deposition chamber, and determining whether the vacuum in the thin film deposition chamber is broken according to the vacuum degree; When the thin film deposition chamber is vacuumed, the target is controlled to be grounded.

11. A computer-readable storage medium, characterized in that The computer-readable storage medium stores computer-executable instructions, and the computer-executable instructions are used to enable a computer to execute the control method according to any one of claims 4 to 10.

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