Stage and method for manufacturing stage

Abstract

This stage includes: a base material including an upper surface, a lower surface opposite the upper surface, and a recess that is recessed from the upper surface toward the lower surface and has an inclined surface inclined from the upper surface toward the lower surface and a bottom surface continuous with the inclined surface and separated from the upper surface; and an insulating film that covers the upper surface of the base material and the inclined surface. In a cross-sectional view, the inclined surface has a first inclined surface and a second inclined surface that are separated from each other, and the sum of an angle α formed by a first line passing through a first intersection point, between the first inclined surface and the bottom surface, and a second intersection point, between the upper surface and the second inclined surface, and a second line passing through the first intersection point and a third intersection point, between the second inclined surface and the bottom surface, and an inclination angle θ of the first inclined surface with respect to a line obtained by extending the second line is 60° or more and less than 120°.

Description

Stage and how to make it

[0001] FIELD Embodiments of the present invention relate to a stage and a method for manufacturing the stage, for example, a stage for placing a substrate thereon and a method for manufacturing the stage.

[0002] Semiconductor devices are found in almost all electronic devices and play an important role in their functionality. Semiconductor devices utilize the semiconducting properties of silicon and other materials. Semiconductor devices are constructed by stacking semiconductor, insulating, and conductive films on a substrate and then patterning these films. These films are deposited using methods such as evaporation, sputtering, chemical vapor deposition (CVD), or chemical reactions on the substrate, and then patterned using a photolithography process. The photolithography process involves forming a resist on the films to be patterned, exposing the resist, developing the resist to light, forming a resist mask by etching, partially removing the films, and finally removing the resist mask.

[0003] The characteristics of the above-mentioned films are significantly influenced by the conditions for forming the film or etching the film. One of these conditions is the voltage applied to the stage (hereinafter referred to as the stage) on which the substrate is placed. With the recent trend toward miniaturization of semiconductor devices, the ratio of the diameter of the hole to the thickness of the film to be processed has increased, leading to a tendency for the voltage applied to the stage included in, for example, an etching apparatus to increase. As the voltage applied to the stage increases, the components included in the stage must also have improved voltage resistance. Examples of components included in the stage include a cooling plate and an electrostatic chuck. Patent Documents 1 and 2 disclose stages in which an insulating film is formed on the surface by ceramic spraying, a thermal spraying method, thereby improving the voltage resistance of the insulating film. Patent Document 3 discloses a highly durable thermal sprayed film formed by stacking multiple ceramic layers with pores oriented in different directions.

[0004] Patent No. 6027407 Registered Utility Model No. 2600558 International Publication No. 2018 / 015985

[0005] In conventional thermal spraying, the spray angle of the thermal sprayer is set as perpendicular as possible to the stage surface to be sprayed, and the film is formed by spraying from one direction on the stage. This thermal spraying method has the problem that, while a normal film is formed on some of the recesses and the sloped side surfaces of the recesses due to through-holes used for flow channels and pusher pins in the stage, large gaps or voids are formed on other parts. When voids are formed on some of the sloped side surfaces of the recesses or holes, the film becomes non-uniform, reducing its withstand voltage (also known as breakdown voltage), and ultimately reducing the reliability of the stage. Therefore, in manufacturing stages using thermal spraying, it is desirable to control the film formed on the sloped side surfaces of the recesses or holes so that it is uniform, thereby improving the withstand voltage of the film.

[0006] In view of the above problems, an object of the present invention is to provide a stage including an insulating film with improved withstand voltage and having excellent insulating performance and reliability. Another object of the present invention is to provide a method for forming an insulating film with improved withstand voltage and having excellent insulating performance and reliability.

[0007] A stage according to one embodiment of the present invention has a substrate including an upper surface, a lower surface opposite the upper surface, a recess that is recessed from the upper surface toward the lower surface and has an inclined surface that slopes from the upper surface toward the lower surface, and a bottom surface that is continuous with the inclined surface and is spaced from the upper surface, and an insulating film that covers the upper surface of the substrate and the inclined surface, wherein, in a cross-sectional view, the inclined surface has a first inclined surface and a second inclined surface that are spaced from each other, and the sum of an angle α formed by a first line passing through a first intersection point between the first inclined surface and the bottom surface and a second intersection point between the upper surface and the second inclined surface, and a second line passing through the first intersection point and a third intersection point between the second inclined surface and the bottom surface, and an inclination angle θ of the first inclined surface with respect to a line extended from the second line is greater than or equal to 60° and less than 120°.

[0008] The insulating film has a first insulating film on an upper surface, a first inclined surface, and a second inclined surface, and a second insulating film stacked on the first insulating film, and the first insulating film has first pores on the upper surface, the first pores having long axes inclined at a first angle with respect to the upper surface, and second pores on the first inclined surface, the second pores having long axes inclined at a second angle with respect to the upper surface, and the first angle and the second angle may be different in magnitude.

[0009] The second insulating film has third pores on the upper surface, the third pores having major axes inclined at a third angle with respect to the upper surface, and fourth pores on the second inclined surface, the fourth pores having major axes inclined at a second angle with respect to the upper surface, and the third angle and the second angle may be different in magnitude.

[0010] The insulating film may have a first insulating film on the upper surface, the first inclined surface, and the second inclined surface, and a second insulating film stacked on the first insulating film, and the film thickness of the first insulating film on the first inclined surface may be thicker than the film thickness of the first insulating film on the second inclined surface, and the film thickness of the second insulating film on the first inclined surface may be thinner than the film thickness of the second insulating film on the second inclined surface.

[0011] The insulating film has a first insulating film on the upper surface, the first inclined surface, and the second inclined surface, and a second insulating film stacked on the first insulating film, and the film thickness of the first insulating film on the first inclined surface may be thicker than the film thickness of the first insulating film on the second inclined surface.

[0012] The insulating film covering a portion of the side surface of the substrate may have a first insulating film on the first inclined surface and the second inclined surface, and a second insulating film stacked on the first insulating film on the first inclined surface and the second inclined surface, and the film density of the first insulating film on the first inclined surface may be higher than the film density of the first insulating film on the second inclined surface, and the film density of the second insulating film on the first inclined surface may be lower than the film density of the second insulating film on the second inclined surface.

[0013] The recess may further extend in a direction from the bottom surface toward the lower surface and penetrate the bottom surface and the lower surface, and the recess may have, in a cross-sectional view, a first side surface that is continuous with the first inclined surface and a second side surface that is continuous with the second inclined surface.

[0014] A method for manufacturing a stage according to one embodiment of the present invention includes: forming a first insulating film by thermal spraying from the thermal sprayer on an inclined surface that slopes from the upper surface to the lower surface, the inclined surface having a recess that recesses in a direction from the upper surface to the lower surface opposite to the upper surface, while moving a thermal sprayer set at a first thermal spraying angle α relative to the upper surface of the substrate along the upper surface in a first direction from one end to the other end of the substrate; and forming a second insulating film by thermal spraying from the thermal sprayer on the first insulating film while moving the thermal sprayer along the upper surface in a second direction opposite to the first direction. a second insulating film is formed by thermal spraying, the recess has a bottom surface that is continuous with the inclined surface and is separated from the top surface, and in a cross-sectional view, the inclined surface has a first inclined surface and a second inclined surface that are separated from each other, and the sum of an angle α formed by a first line passing through a first intersection point between the first inclined surface and the bottom surface and a second intersection point between the top surface and the second inclined surface, and a second line passing through the first intersection point and a third intersection point between the second inclined surface and the bottom surface, and an inclination angle θ of the second line of the first inclined surface with respect to a line extending from the second line is 60° or more and less than 120°.

[0015] A third insulating film may be formed on the second insulating film by thermal spraying from the thermal spray machine while moving the thermal spray machine in a second direction intersecting the first direction, and a fourth insulating film may be formed on the third insulating film by thermal spraying from the thermal spray machine while moving the thermal spray machine in a direction opposite to the second direction.

[0016] FIG. 1 is a schematic top view showing the configuration of a stage according to one embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing the configuration of a stage according to one embodiment of the present invention. FIG. 3 is a schematic cross-sectional view showing the configuration of a stage according to one embodiment of the present invention. FIG. 4 is a schematic cross-sectional view showing the configuration of a stage according to one embodiment of the present invention. FIG. 5 is a flowchart showing a method for producing a stage according to one embodiment of the present invention. FIG. 6 is a schematic perspective view illustrating a method for producing a stage according to one embodiment of the present invention. FIG. 7 is a schematic top view of a film processing apparatus including a stage according to an embodiment of the present invention. FIG. 8 is a schematic cross-sectional view of a film processing apparatus including a stage according to an embodiment of the present invention.

[0017] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. However, the present invention can be embodied in various forms without departing from the spirit of the present invention, and should not be construed as being limited to the description of the following exemplary embodiments.

[0018] In order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part schematically compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present invention. Furthermore, in this specification and each drawing, elements having the same functions as those explained in the previous drawings may be assigned the same reference numerals, and duplicate explanations may be omitted.

[0019] In this specification and drawings, when multiple parts of one configuration are to be distinguished from one another, the same reference numeral is used, and further, a hyphen and a natural number are used.

[0020] First Embodiment The configuration of a stage 10 according to one embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG.

[0021] Fig. 1 is a schematic top view of a stage 10 according to one embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of the stage 10 according to one embodiment of the present invention. Specifically, it is a schematic cross-sectional view of the stage 10 taken along line A1-A2 shown in Fig. 1.

[0022] As shown in FIGS. 1 and 2 , the stage 10 has a substrate 100 and an insulating film 110. The insulating film 110 is provided so as to cover the upper surface 100T of the substrate and the inclined surface 100LT of the recess 120. The insulating film 110 may be provided so as to cover the entire upper surface 100T, the lower surface 100B, and the side surface 100E of the substrate 100, or may be provided on a part of the upper surface 100T, a part of the lower surface 100B, or a part of the side surface 100E of the substrate 100. The lower surface 100B of the substrate 100 is the surface opposite the upper surface 100T of the substrate 100, and the side surface 100E of the substrate 100 is a surface that is continuous with the upper surface 100T and the lower surface 100B of the substrate 100, respectively.

[0023] The substrate 100 may be circular or rectangular as shown in Fig. 1. The substrate 100 may have a structure in which a plurality of flat plates of different sizes are joined together. In this case, the substrate 100 may have a structure in which a smaller flat plate is disposed on a larger flat plate.

[0024] The substrate 100 has a recess 120 recessed in a direction from the upper surface 100T toward the lower surface 100B. The substrate 100 has the recess 120 inside the side surface 100E, which is the outer shape of the substrate 100 when viewed from above. The recess 120 is arranged surrounded by an inclined surface 100LT. The substrate 100 has multiple recesses 120. The multiple recesses 120 can be arranged at equidistant and symmetrical positions about the rotation center 100C (rotation axis) as shown in FIG. 1. The multiple recesses 120 may be arranged concentrically from the rotation center 100C of the substrate 100. The number of recesses 120 is not particularly limited. The diameter of the recess 120 is also not particularly limited and may be determined according to the application.

[0025] For example, metal or ceramics can be used as the material of the substrate 100. More specifically, titanium (Ti), aluminum (Al), stainless steel, or oxides containing these can be used as the material of the substrate 100.

[0026] The insulating film 110 can be made of a material that satisfies the desired voltage resistance characteristics and can be sprayed by a thermal spraying method. For example, the insulating film 110 can be made of an oxide containing at least one element selected from the group consisting of alkaline earth metals, rare earth metals, aluminum (Al), tantalum (Ta), and silicon (Si). More specifically, the insulating film 110 can be made of aluminum oxide (Al ２ O ３ ), or magnesium oxide (MgO), etc. can be used.

[0027] The material used for the insulating film 110 may include an inorganic insulator. For example, the inorganic insulator is aluminum oxide, titanium oxide, chromium oxide, zirconium oxide, magnesium oxide, yttrium oxide, or a composite oxide thereof.

[0028] Referring to FIG. 3, the recess 120 and the insulating film 110 provided on the upper surface 100T of the substrate 100 and the inclined surface 100LT of the recess 120 will be described in detail.

[0029] 3 is a schematic cross-sectional view showing an enlarged portion of the stage 10 according to an embodiment of the present invention, specifically, a schematic cross-sectional view showing an enlarged portion 10D of the stage 10 shown in FIG.

[0030] The recess 120 is recessed from the upper surface 100T toward the lower surface 100B. The recess 120 has one opening on the same plane as the upper surface 100T. The recess 120 has an inclined surface 100LT of the substrate 100 and a bottom surface 100D.

[0031] The recess 120 has an inclined surface 100LT that is continuous with the top surface 100T of the substrate 100, and a bottom surface 100D that is continuous with the inclined surface 100LT. The inclined surface 100LT is located between the top surface 100T and the bottom surface 100D and is continuous with both. A width 140-2 of the bottom surface 100D is smaller than a width 140-3 of the opening surface of the recess 120.

[0032] The inclined surface 100LT has a first inclined surface 100LT-1 and a second inclined surface 100LT-2 in a cross-sectional view. The first inclined surface 100LT-1 and the second inclined surface 100LT-2 are spaced apart in a cross-sectional view. The first inclined surface 100LT-1 and the bottom surface 100D intersect at a first intersection 130-1, and the second inclined surface 100LT-2 and the bottom surface 100D intersect at a second intersection 130-2. The first inclined surface 100LT-1 and the top surface 100T intersect at a third intersection 130-3, and the second inclined surface 100LT-2 and the top surface 100T intersect at a fourth intersection 130-4.

[0033] Here, the line passing through the first intersection 130-1 and the fourth intersection 130-4 is referred to as the first line 140-1. The line passing through the first intersection 130-1 and the second intersection 130-2 is referred to as the second line 140-2. The line passing through the third intersection 130-3 and the fourth intersection 130-4 is referred to as the third line 140-3. The angle α formed by the first line 140-1 and the second line 140-2 forms an angle α with the second line 140-2 passing through the first intersection 130-1 and the second intersection 130-2. The first inclined surface 100LT-1 forms an inclination angle θ with respect to a line extending the second line 140-2. The trigonometric ratio for the angle α satisfies the following equation 1, and the sum of the angle α and the angle θ is greater than or equal to 60° and less than 120°. The sum of the angle α and the angle θ is preferably 60° or more and 90° or less. Note that X represents the distance between the plane including the second line 140-2 and the top surface 100T, or the length drawn perpendicularly from the fourth intersection 130-4 to the second line 140-2. Y represents the length of the third line 140-3.

[0034]

[0035] The insulating film 110 on the upper surface 100T and the inclined surface 100LT is formed of a plurality of insulating films 110. For example, a first insulating film 110-1 is formed on the upper surface 100T, and a second insulating film 110-2 is formed on the first insulating film 110-1. The first insulating film 110-1 has a low film density in a portion on the inclined surface 100LT. Similarly, the second insulating film 110-2 also has a low film density in a portion on the inclined surface 100LT. Specifically, in the first insulating film 110-1, the film density of the first insulating film 110A-1 on the first inclined surface 100LT-1 is higher than the film density of the first insulating film 110B-2 on the second inclined surface 100LT-2. In the second insulating film 110-2, the film density of the second insulating film 110B-1 on the first inclined surface 100LT-1 is lower than the film density of the second insulating film 110A-2 on the second inclined surface 100LT-2. On the first inclined surface 100LT-1, the first insulating film 110A-1 with a high film density and the second insulating film 110B-1 with a low film density are formed, and on the second inclined surface 100LT-2, the first insulating film 110B-2 with a low film density and the second insulating film 110A-2 with a high film density are formed.

[0036] The insulating film 110 may be formed from an even number of insulating films 110. As described above, by stacking the first insulating film 110-1 and the second insulating film 110-2 having different film densities, the insulating films 110-1 and 110-2 complement each other, and an insulating film 110 that is homogeneous as a whole can be formed.

[0037] The film density of the first insulating film 110-1 on the first inclined surface 100LT-1 and the film density of the first insulating film on the second inclined surface 100LT-2 can be compared using a method generally used for measuring film density, such as X-ray reflectometry (XRR).

[0038] The thickness t1 of the first insulating film 110-1 and the thickness t2 of the second insulating film 110-1 are, for example, 50 μm or more and 1500 μm or less. The thickness t1 of the first insulating film 110-1 and the thickness t2 of the second insulating film 110-1 on the upper surface 100T can be approximately the same thickness.

[0039] The film thickness t1 of the first insulating film 110-1 and the film thickness t2 of the second insulating film 110-2 on the inclined surface 100LT may differ in part of the inclined surface 100LT. For example, the film thickness t1 of the first insulating film 110-1 on the first inclined surface 100LT-1 may be thicker than the film thickness t1 of the first insulating film 110-1 on the second inclined surface 100LT-2, and the film thickness t2 of the second insulating film 110-2 on the first inclined surface 100LT-1 may be thinner than the film thickness t2 of the second insulating film 110-2 on the second inclined surface 100LT-2. However, the total film thicknesses of the first insulating film 110-1 and the second insulating film 110-2 on the first inclined surface 100LT-1 and the second inclined surface 100LT-2 are approximately the same.

[0040] Alternatively, the first insulating film 110-1 and the second insulating film 110-2 may have different film thicknesses on the inclined surface 100LT. For example, the first insulating film 110-1 has a film thickness t1 on the first inclined surface 100LT-1 near the top surface 100T that is thinner than the film thickness t1 near the bottom surface 100D. The second insulating film 110-2 has a film thickness t2 on the second inclined surface 100LT-2 near the top surface 100T that is thicker than the film thickness t2 near the bottom surface 100D.

[0041] The comparison of the film density of the first insulating film 110-1 on the first inclined surface 100LT-1 and the film density of the first insulating film on the second inclined surface 100LT-2 may be performed by comparing the porosity of each insulating film. For example, the cross sections of the first insulating films on the first inclined surface 100LT-1 and the second inclined surface 100LT-2 may be observed using a microscope such as an SEM, and a film having a large pore area in the SEM image may be determined to have a high porosity and a low film density, and a film having a small pore area may be determined to have a low porosity and a high film density.

[0042] The pores in the insulating film 110 will be described with reference to Fig. 4. Fig. 4 is a schematic cross-sectional view showing an enlarged portion of the stage 10 according to one embodiment of the present invention.

[0043] The first insulating film 110-1 has a pore 111-1 on the upper surface 100T, the pore having a major axis 111A-1 inclined at a first angle β1 with respect to the upper surface 100T. The first insulating film 110-1 has a plurality of pores 111-1 on the upper surface 100T. The second insulating film 110-2 has a pore 111-2 on the upper surface 100T, the pore having a major axis 111A-2 inclined at a second angle β2 with respect to the upper surface 100T. The second insulating film 110-2 has a plurality of pores 111-2 on the upper surface 100T. The first angle β1 and the second angle β2 are different in magnitude. For example, as shown in FIG. 4 , the pore 111-1 has a major axis 111A-1 inclined at a first angle β1 that is greater than the second angle β2. The first angle β1 and the second angle β2 depend on the spraying angle α of the thermal spraying machine 500 and vary depending on the spraying angle α.

[0044] The first insulating film 110-1 has pores 111-3 on the bottom surface 100D, each having a major axis 111A-1 inclined at a first angle β1 with respect to the top surface 100T. The first insulating film 110-1 has a plurality of pores 111-3 on the bottom surface 100D. The second insulating film 110-2 has pores 111-4 on the bottom surface 100D, each having a major axis 111A-2 inclined at a second angle β2 with respect to the top surface 100T. The second insulating film 110-2 has a plurality of pores 111-4 on the bottom surface 100D. The first angle β1 and the second angle β2 are different in magnitude. Note that the above description shows a case where the bottom surface 100D and the top surface 100T are parallel to each other. When the bottom surface 100D and the top surface 100T are not parallel, the major axes of the pores 111-3 and 111-4 on the bottom surface 100D are inclined at an angle different from the first angle β1 or the second angle β2 with respect to the top surface 100T.

[0045] The first insulating film 110-1 has pores 111-5 on the first inclined surface 100LT-1, the pores having major axes inclined at angles different from the first angle β1 and the second angle β2 with respect to the upper surface 100T. The pores 111-5 have major axes that are substantially parallel to the first inclined surface 100LT-1. A substantially parallel major axis refers to a major axis that is inclined within ±10° from an angle parallel to the first inclined surface 100LT-1. The first insulating film 110-1 has a plurality of pores 111-5 on the first inclined surface 100LT-1. The second insulating film 110-2 has pores 111-6 on the first inclined surface 100LT-1, the major axes of which are inclined at an angle different from the inclination angle of the major axes of the pores 111-5 with respect to the upper surface 100T. The second insulating film 110-2 has a plurality of pores 111-6 on the first inclined surface 100LT-1, the pores having major axes that are irregularly inclined with respect to the upper surface 100T.

[0046] The first insulating film 110-1 has, on the second inclined surface 100LT-2, pores 111-7 having major axes inclined at angles different from the first angle β1 and the second angle β2 with respect to the upper surface 100T. The first insulating film 110-1 has, on the second inclined surface 100LT-2, a plurality of pores 111-7 having major axes inclined irregularly with respect to the upper surface 100T. The second insulating film 110-2 has, on the second inclined surface 100LT-2, pores 111-8 having major axes inclined at an angle different from the inclination angle of the major axes of the pores 111-7 with respect to the upper surface 100T. The pores 111-8 have major axes that are approximately parallel to the first inclined surface 100LT-1. The second insulating film 110-2 has a plurality of pores 111-8 on the second inclined surface 100LT-2.

[0047] The pores 111 are flat pores formed in the insulating film 110 when the insulating film 110 is thermally sprayed onto the substrate 100, and as shown in FIG. 4, have a major axis in the longitudinal direction of the pores 111.

[0048] As described above, by stacking the first insulating film 110-1 and the second insulating film 110-2 sprayed at different spraying angles, pores whose major axes are inclined at different angles relative to the upper surface 100T are stacked, thereby improving the peeling resistance of the insulating film 110.

[0049] In the stage 10 according to this embodiment, the sum of the inclination angle θ of the first inclined surface 100LT-1 or the second inclined surface 100LT-2 and the angle α between the first line 140-1 and the second line 140-2 is equal to or greater than 60° and less than 120°. This makes it possible to form a homogeneous insulating film on the first inclined surface 100LT-1 and the second inclined surface 100LT-2, while suppressing the occurrence of large gaps or voids. Forming such an insulating film 110 on the substrate 100 improves the withstand voltage of the insulating film 110. Therefore, the stage 10 according to this embodiment includes an insulating film 110 with improved adhesion strength and withstand voltage, and has excellent insulating performance and reliability.

[0050] Second Embodiment A second embodiment of the stage 10 according to one embodiment of the present invention will be described with reference to Fig. 5. Fig. 5 shows a cross-sectional view of the stage 10. In the following description, differences from the first embodiment will be mainly described, and descriptions of common parts will be omitted as appropriate.

[0051] The stage 10 has a through-hole 122. The through-hole 122 penetrates the bottom surface 100D and the lower surface 100B of the recess 120. The through-hole 122 is a cylindrical opening extending in a direction from the bottom surface 100D toward the lower surface 100B. The through-hole 122 is formed in the side surface 100LB of the substrate 100. The outer shape of the opening surface of the through-hole 122 corresponds to the outer shape of the opening surface of the recess 120 shown in FIG. 1, and the outer shape of the opening surface of the cylindrical portion corresponds to the outer shape of the bottom surface 100D of the recess 120 shown in FIG. 1.

[0052] In a cross-sectional view, the through hole 122 is formed by a first side surface 100LB-1 that is continuous with the first inclined surface 100LT-1 and a second side surface 100LB-2 that is continuous with the second inclined surface 100LT-2. The first side surface 100LB-1 and the second side surface 100LB-2 belong to the side surface 100LB. The first inclined surface 100LT-1 and the first side surface 100LB-1 intersect at a first intersection 130-1, and the second inclined surface 100LT-2 and the second side surface 100LB-2 intersect at a second intersection 130-2.

[0053] A flow path 150 may be provided in the through-hole 122. The flow path 150 may be provided in a region sandwiched between the first side surface 100LB-1 and the second side surface 100LB-2 in a cross-sectional view. When the flow path 150 is provided in the through-hole 122, the insulating film 110 on the flow path 150 is removed, and the insulating film 110 on the first inclined surface 100LT-1 is separated from the insulating film 110 on the second inclined surface in a cross-sectional view.

[0054] The flow path 150 is formed of a porous body, and allows a medium such as gas to flow from one side to the other. The porous body has a plurality of through-holes that penetrate from one side to the other and allow the medium to flow. The porous body has a plurality of through-holes that penetrate in a direction from the upper surface 100T of the substrate 100 toward the lower surface 100B. The porous body can be made of, for example, porous ceramics.

[0055] Third Embodiment A method for manufacturing a stage 10 according to one embodiment of the present invention will be described with reference to Fig. 6. Fig. 6 is a flowchart showing a method for manufacturing a stage according to one embodiment of the present invention.

[0056] 6, the method for producing the stage 10 includes a thermal spraying step (S110) of spraying while moving in a first direction relative to the upper surface 100T of the substrate 100, and a thermal spraying step (S120) of spraying while moving in a second direction relative to the upper surface 100T of the substrate 100. The stage 10 according to this embodiment is produced by repeating the thermal spraying step (S110) and the thermal spraying step (S120).

[0057] The thermal spraying method used in one embodiment of the present invention may be, for example, localoid thermal spraying, plasma thermal spraying, or a combination of these.

[0058] FIG. 7 is a schematic perspective view illustrating the step of thermally spraying the substrate (S110) and the step of rotating the substrate (S120) in the method of manufacturing the stage 10 according to one embodiment of the present invention.

[0059] In the thermal spraying step (S110), as shown in FIG. 7 , a method for fabricating the stage 10 involves moving a thermal sprayer 500, set at a spraying angle α with respect to an upper surface 100T of the substrate 100, in a first direction D1 along the upper surface 100T from one end of the substrate 100 to the other end. A first insulating film 110-1 is formed on the upper surface 100T of the substrate 100 and the inclined surface 100LT that forms the recess 120 by the thermal spray material sprayed from the thermal sprayer 500. Note that moving the thermal sprayer 500 in the first direction D1 along the upper surface 100T means moving the thermal sprayer 500 along a plane that is approximately parallel to the upper surface 100T. The spraying angle α indicates the angle of the direction in which the thermal sprayer 500 sprays the thermal spray material with respect to the upper surface of the substrate 100.

[0060] The distance (spraying distance) between the upper surface 100T and the thermal sprayer 500 is, for example, 60 mm or more and 130 mm or less, with the thermal sprayer 500 maintaining a spraying angle α with respect to the upper surface 100T. If the spraying distance is short, the energy of the sprayed material adhered to the substrate is high, and if the sprayed material is an oxide, oxygen vacancies are likely to be generated. Furthermore, if the irradiation distance is long, it becomes difficult to form a dense film. Therefore, it is preferable that the spraying distance be in the above range.

[0061] Next, the thermal spraying step (S120) is performed. In the thermal spraying step (S120), as shown in Fig. 7, the thermal sprayer 500 is moved in a second direction D2 opposite to the first direction D1 in which the thermal sprayer 500 moved in the thermal spraying step (S110). A second insulating film 110-2 is formed on the upper surface 100T of the substrate 100 and a portion of the side surface 100L that forms the recess 120 by the thermal spray material sprayed from the thermal sprayer 500.

[0062] It is preferable that the thermal sprayer 500 moves along the same path as the path that the thermal sprayer 500 moved along in the thermal spraying step (S110). By moving the thermal sprayer 500 along the same path while maintaining the thermal spraying angle α with respect to the upper surface 100T, it is possible to form an insulating film 110 on the second inclined surface 100LT-2 that is homogeneous with the insulating film 110 on the first inclined surface 100LT-1, as shown in FIG.

[0063] Here, to move the thermal sprayer 500 in the second direction D2, the thermal sprayer 500 may be moved from one end of the substrate 100 to the other, and then installed so that the thermal spraying angle α is with respect to the upper surface 100T. Alternatively, the thermal sprayer 500 may be returned to one end of the substrate 100, and the substrate 100 may be rotated 180° around the rotation center 100C.

[0064] In the above, the substrate 100 is fixed, and the thermal sprayer 500 is installed so that the spraying direction of the thermal sprayer 500 forms a spraying angle α with respect to the upper surface 100T of the substrate 100. However, the thermal sprayer 500 may be fixed, and the substrate 100 may be installed so that the upper surface 100T of the substrate 100 forms a spraying angle α with respect to the spraying direction of the thermal sprayer 500.

[0065] If the thermal spraying step (S110) and the thermal spraying step (S120) are considered to be one cycle, the method for manufacturing the stage 10 can include two or more cycles.

[0066] When two or more cycles are included, after the first cycle is performed, the thermal spray gun 500 is moved parallel to the first or second direction in which it was moved in the first cycle (shift 1) and the second cycle is performed, as shown in Figure 8. The second cycle is performed in the same manner.

[0067] In another example of a case where two or more cycles are included, after the first cycle is performed, the stage 10 is moved parallel to the first direction or the second direction in which it was moved in the first cycle (shift 2), and the second cycle is performed.

[0068] By repeating the cycle multiple times, an insulating film 110 including a plurality of insulating films is formed on the upper surface and the inclined surface 100LT of the substrate 100. Furthermore, the insulating film on the first inclined surface 100LT-1 and the insulating film on the second inclined surface 100LT-2 are formed uniformly.

[0069] After the cycle of the thermal spraying step (S110) and the thermal spraying step (S120) has been repeated multiple times, the substrate 100 can be rotated again, and the cycle of the thermal spraying step (S110) and the thermal spraying step (S120) can be carried out again.

[0070] After performing n cycles of the thermal spraying step (S110) and the thermal spraying step (S120) (n is a natural number of 2 or more), the substrate 100 is rotated around the rotation axis 100C by an angle greater than 0° and less than 180°. For example, the substrate 100 is rotated by 90° around the rotation axis 100C, and n cycles of the thermal spraying step (S110) and the thermal spraying step (S120) are performed.

[0071] After the cycle is repeated multiple times, the substrate 100 is rotated, and the cycle is repeated multiple times again, thereby forming a uniform insulating film on the first inclined surface 100LT-1 and the second inclined surface 100LT-2.

[0072] According to the method for fabricating the stage 10 of this embodiment, a first insulating film 110-1 and a second insulating film 110-2 are laminated and formed on the inclined surface 100LT of the substrate 100. The spray gun 500 is installed at a spraying angle α with respect to the upper surface 100T of the substrate 100 and sprays while moving from one end of the substrate 100 to the other in a first direction and a second direction opposite thereto. This allows for the formation of a homogeneous insulating film on the first inclined surface 100LT-1 and the second inclined surface 100LT-2, with the formation of large gaps or voids being suppressed. Forming such an insulating film 110 on the substrate 100 improves the withstand voltage of the insulating film 110. Therefore, according to the method for fabricating the stage 10 of this embodiment, an insulating film 110 with improved adhesion strength and withstand voltage can be formed, thereby enabling the fabrication of a stage 10 with excellent insulation performance and reliability.

[0073] <Fourth Embodiment> The configuration of a film processing apparatus 300 according to one embodiment of the present invention will be described with reference to Fig. 9. The film processing apparatus 300 includes a stage 10. Therefore, in the following, the description of the configuration of the stage 10 according to the first embodiment may be omitted.

[0074] 9 is a schematic cross-sectional view of a film processing apparatus 300 according to one embodiment of the present invention. The film processing apparatus 300 is a so-called etching apparatus, but the film processing apparatus 300 is not limited to this.

[0075] The film processing apparatus 300 can perform dry etching on various films. The film processing apparatus 300 has a chamber 302. The chamber 302 provides a space in which etching is performed on a film such as a conductor, an insulator, or a semiconductor formed on a substrate.

[0076] An exhaust device 304 is connected to the chamber 302, which allows the interior of the chamber 302 to be set to a reduced pressure atmosphere. The chamber 302 is further provided with an inlet pipe 306 for introducing a reactive gas, and the reactive gas for etching is introduced into the chamber via a valve 308. The reactive gas may be, for example, carbon tetrafluoride (CF ４ ), octafluorocyclobutane (c-C ４ F８ ), decafluorocyclopentane (c-C ５ F １０ ), or hexafluorobutadiene (C ４ F ６ ) and other fluorine-containing organic compounds.

[0077] A microwave source 312 can be provided at the top of the chamber 302 via a waveguide 310. The microwave source 312 has an antenna for supplying microwaves and outputs high-frequency microwaves such as 2.45 GHz microwaves or 13.56 MHz radio waves (RF). The microwaves generated by the microwave source 312 propagate to the top of the chamber 302 via the waveguide 310 and are introduced into the chamber 302 through a window 314 made of quartz, ceramic, or the like. The microwaves convert the reactive gas into plasma, and the electrons, ions, and radicals contained in the plasma cause film etching to proceed.

[0078] A stage 10 for placing a substrate is provided below the chamber 302. A power supply 324 is connected to the stage 10, and a voltage equivalent to high-frequency power is applied to the stage 10, generating a microwave-generated electric field perpendicular to the surface of the stage 10 and the substrate surface. Magnets 316, 318, and 320 may be provided on the top or side of the chamber 302. The magnets 316, 318, and 320 may be permanent magnets or electromagnets with electromagnetic coils. The magnets 316, 318, and 320 generate magnetic field components parallel to the stage 10 and the substrate surface. In combination with the microwave-generated electric field, electrons in the plasma are subjected to a Lorentz force, resonating and binding to the stage 10 and the substrate surface. As a result, high-density plasma can be generated on the substrate surface.

[0079] For example, if the stage 10 is equipped with a sheathed heater, a heater power supply 330 that controls the sheathed heater is connected to the stage 10. Optionally, the stage 10 may further be connected to a power supply 326 for an electrostatic chuck that secures the substrate to the stage 10, a temperature controller 328 that controls the temperature of the medium circulated inside the stage 10, and a rotation control device (not shown) that rotates the stage 10.

[0080] The film processing apparatus 300 according to this embodiment includes a stage 10. By using the stage 10, the substrate can be uniformly heated and the heating temperature can be precisely controlled. Furthermore, by using the stage 10 with excellent insulating performance, the withstand voltage against the voltage applied to the substrate is improved. Therefore, by using the film processing apparatus 300, it is possible to form contacts with a high aspect ratio or films with a high aspect ratio. Therefore, the film processing apparatus 300 can uniformly etch various films formed on the substrate. Furthermore, by using the highly reliable stage 10, the frequency of maintenance of the film processing apparatus 300 can be reduced.

[0081] The above-described embodiments of the present invention may be combined as appropriate as long as they are not mutually inconsistent. Furthermore, even if a person skilled in the art adds or deletes components or modifies the design based on each embodiment, the addition, deletion, or modification of components is included in the scope of the present invention as long as the gist of the present invention is maintained.

[0082] Furthermore, even if there are other effects and advantages different from those brought about by the above-mentioned embodiments, those that are clear from the description in this specification or that can be easily predicted by a person skilled in the art are naturally understood to be brought about by the present invention.

[0083] 10: stage, 100: substrate, 100T: upper surface, 100B: lower surface, 100C: center of rotation, 100E: outer shape, 100E: side surface, 100L: side surface, 100LB-2: second side surface, 100LB-1: first side surface, 100LB: side surface, 100LT: inclined surface, 100LT-1: first inclined surface, 100LT-2: second inclined surface, 110: insulating film, 110-1: first insulating film, 110-2: second insulating film, 120: recess, 130-1: first intersection, 130-2: second Intersection, 130-3: third intersection, 130-4: fourth intersection, 140-1: first line, 140-2: second line, 140-3: third line, 150: flow path, 300: film processing device, 302: chamber, 304: exhaust device, 306: introduction pipe, 308: valve, 310: waveguide, 312: microwave source, 314: window, 316: magnet, 318: magnet, 320: magnet, 324: power supply, 326: power supply, 328: temperature controller, 330: heater power supply, 500: thermal spray machine

Claims

1. A stage comprising: a substrate including an upper surface, a lower surface opposite the upper surface, and a recess that is recessed in a direction from the upper surface toward the lower surface, the recess having an inclined surface that slopes from the upper surface toward the lower surface, and a bottom surface that is continuous with the inclined surface and spaced apart from the upper surface; and an insulating film that covers the upper surface of the substrate and the inclined surface, wherein, in a cross-sectional view, the inclined surface has a first inclined surface and a second inclined surface that are spaced apart from each other, and the sum of an angle α made by a first line passing through a first intersection point between the first inclined surface and the bottom surface and a second intersection point between the upper surface and the second inclined surface, and a second line passing through the first intersection point and a third intersection point between the second inclined surface and the bottom surface, and an inclination angle θ of the first inclined surface with respect to a line extended from the second line is greater than or equal to 60° and less than 120°.

2. The stage according to claim 1, wherein the insulating film has a first insulating film on the upper surface, the first inclined surface, and the second inclined surface, and a second insulating film stacked on the first insulating film, and the first insulating film has first pores on the upper surface, the first pores having major axes inclined at a first angle with respect to the upper surface, and second pores on the first inclined surface, the second pores having major axes inclined at a second angle with respect to the upper surface, and the first angle and the second angle are different in magnitude.

3. The stage described in claim 2, wherein the second insulating film has third pores on the upper surface, the third pores having major axes inclined at a third angle with respect to the upper surface, and fourth pores on the second inclined surface, the fourth pores having major axes inclined at the second angle with respect to the upper surface, and the third angle and the second angle are different in magnitude.

4. The stage described in claim 1, wherein the insulating film has a first insulating film on the upper surface, the first inclined surface, and the second inclined surface, and a second insulating film stacked on the first insulating film, the film thickness of the first insulating film on the first inclined surface is thicker than the film thickness of the first insulating film on the second inclined surface, and the film thickness of the second insulating film on the first inclined surface is thinner than the film thickness of the second insulating film on the second inclined surface.

5. The stage according to claim 1, wherein the insulating film has a first insulating film on the upper surface, the first inclined surface, and the second inclined surface, and a second insulating film stacked on the first insulating film, and the film thickness of the first insulating film on the first inclined surface is thicker than the film thickness of the first insulating film on the second inclined surface.

6. The stage according to claim 1, wherein the insulating film has a first insulating film on the upper surface, the first inclined surface, and the second inclined surface, and a second insulating film stacked on the first insulating film, wherein the film density of the first insulating film on the first inclined surface is higher than the film density of the first insulating film on the second inclined surface, and the film density of the second insulating film on the first inclined surface is lower than the film density of the second insulating film on the second inclined surface.

7. The stage according to claim 1, further comprising a through hole extending in a direction from the bottom surface toward the lower surface and penetrating the bottom surface and the lower surface, wherein the through hole is formed in a cross-sectional view by a first side surface continuous with the first inclined surface and a second side surface continuous with the second inclined surface.

8. A thermal sprayer set at a first spraying angle α relative to the upper surface of a substrate is moved in a first direction from one end to the other end of the substrate along the upper surface, forming a first insulating film by thermal spraying from the thermal sprayer on the upper surface and on an inclined surface inclined from the upper surface to the lower surface, the inclined surface having a recess recessed in a direction from the upper surface to the lower surface opposite to the upper surface; and while moving the thermal sprayer in a second direction opposite to the first direction along the upper surface, forming a second insulating film by thermal spraying from the thermal sprayer on the first insulating film, the recess being continuous with the inclined surface and having a bottom surface spaced apart from the upper surface, and in a cross-sectional view, the inclined surface having a first inclined surface and a second inclined surface spaced apart from each other, a first line passing through a first intersection point between the first inclined surface and the bottom surface and a second intersection point between the top surface and the second inclined surface, a second line passing through the first intersection point and a third intersection point between the second inclined surface and the bottom surface, and an inclination angle θ of the first inclined surface with respect to a line extending the second line are greater than or equal to 60° and less than 120°.

9. A method for manufacturing a stage according to claim 8, wherein a third insulating film is formed on the second insulating film by thermal spraying from the thermal spray machine while moving the thermal spray machine in a third direction intersecting the first direction, and a fourth insulating film is formed on the third insulating film by thermal spraying from the thermal spray machine while moving the thermal spray machine in a direction opposite to the third direction.

Images