Light-emitting device and image display device

Abstract

Provided is a light-emitting device having excellent flatness. A light-emitting device according to an embodiment of the present disclosure includes: a substrate; one or more light-emitting elements that are provided on the substrate and each have an identical laminated structure; and a compound semiconductor layer that is provided to at least a portion of the substrate around the one or more light-emitting elements, is electrically separated from the one or more light-emitting elements, and has the aforementioned laminated structure. An upper surface of the one or more light-emitting elements on the side opposite the substrate and an upper surface of the compound semiconductor layer on the side opposite the substrate are at the same height position with respect to an upper surface of the substrate.

Description

Light-emitting device and image display device

[0001] The present disclosure relates to a light-emitting device and an image display device including the light-emitting device.

[0002] To date, for example, a light-emitting element has been proposed that includes a light-emitting diode layer in which the active layer and the second conductive layer of the compound semiconductor layer are partitioned into pixels by element isolation trenches, and the first conductive layer is common to all pixels (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2020-205336

[0004] Incidentally, high reliability is required for light emitting devices using micro LEDs (Light Emitting Diodes).

[0005] A light-emitting device according to one embodiment of the present disclosure includes a substrate, one or more light-emitting elements provided on the substrate and each having the same layered structure as the other, and a compound semiconductor layer provided around at least a portion of the periphery of the one or more light-emitting elements on the substrate, electrically isolated from the one or more light-emitting elements, and having the above-described layered structure, wherein the top surfaces of the one or more light-emitting elements opposite the substrate and the top surface of the compound semiconductor layer opposite the substrate are at the same height relative to the top surface of the substrate.

[0006] In a light-emitting device according to an embodiment of the present disclosure, a compound semiconductor layer having approximately the same thickness as the plurality of light-emitting elements is provided in the same layer as the light-emitting elements, thereby stabilizing the thickness between pixels and achieving flatness.

[0007] FIG. 1 is a cross-sectional view schematically illustrating an example of a configuration of a light-emitting device according to a first embodiment of the present disclosure. FIG. 2 is a cross-sectional view schematically illustrating an example of the overall planar configuration of the light-emitting device shown in FIG. 1. FIG. 3 is a cross-sectional view schematically illustrating an enlarged portion of the planar configuration of the light-emitting device shown in FIG. 2. FIG. 4 is a cross-sectional view schematically illustrating an example of a configuration of a light-emitting element and a compound semiconductor layer shown in FIG. 1. FIG. 5A is a cross-sectional view schematically illustrating an example of a manufacturing process for the light-emitting device shown in FIG. 1. FIG. 5B is a cross-sectional view schematically illustrating a process subsequent to FIG. 5A. FIG. 5C is a cross-sectional view schematically illustrating a process subsequent to FIG. 5B. FIG. 5D is a cross-sectional view schematically illustrating a process subsequent to FIG. 5C. FIG. 5E is a cross-sectional view schematically illustrating a process subsequent to FIG. 5D. FIG. 5F is a cross-sectional view schematically illustrating a process subsequent to FIG. 5E. FIG. 5G is a cross-sectional view schematically illustrating a process subsequent to FIG. 5F. FIG. 5H is a cross-sectional view schematically illustrating a process subsequent to FIG. 5G. FIG. 6 is a cross-sectional view schematically illustrating an example of a configuration of a light-emitting device according to a first modification of the present disclosure. FIG. 7A is a schematic cross-sectional view illustrating an example of the configuration of a light-emitting device according to Modification 2 of the present disclosure. FIG. 7B is a schematic cross-sectional view illustrating another example of the configuration of a light-emitting device according to Modification 2 of the present disclosure. FIG. 8A is a schematic cross-sectional view illustrating an example of the configuration of a light-emitting device according to Modification 3 of the present disclosure. FIG. 8B is a circuit diagram illustrating an example of the circuit configuration of a light-emitting device according to Modification 3 of the present disclosure. FIG. 9A is a schematic cross-sectional view illustrating an example of the configuration of a light-emitting device according to Modification 4 of the present disclosure. FIG. 9B is a circuit diagram illustrating an example of the circuit configuration of a light-emitting device according to Modification 4 of the present disclosure. FIG. 10A is a schematic plan view illustrating an example of the configuration of a light-emitting element and a compound semiconductor layer according to Modification 5 of the present disclosure. FIG. 10B is a schematic plan view illustrating another example of the configuration of a light-emitting element and a compound semiconductor layer according to Modification 5 of the present disclosure. FIG. 10C is a schematic plan view illustrating another example of the configuration of a light-emitting element and a compound semiconductor layer according to Modification 5 of the present disclosure. FIG. 10D is a schematic plan view illustrating another example of the configuration of a light-emitting element and a compound semiconductor layer according to Modification 5 of the present disclosure. Fig. 11A is a plan view schematic showing an example of the configuration of a light-emitting element and a compound semiconductor layer according to Modification 6 of the present disclosure. Fig. 11B is a cross-sectional view schematic showing an example of the configuration of a light-emitting device in a region X shown in Fig. 11A. Fig. 12 is a cross-sectional view schematic showing an example of the configuration of a light-emitting device according to Modification 7 of the present disclosure.FIG. 13A is a schematic cross-sectional view showing an example of the configuration of a light-emitting unit and a drive circuit according to Modification 8 of the present disclosure. FIG. 13B is a schematic cross-sectional view showing another example of the configuration of a light-emitting unit and a drive circuit according to Modification 8 of the present disclosure. FIG. 14A is a schematic cross-sectional view showing an example of the configuration of a light-emitting device according to Modification 9 of the present disclosure. FIG. 14B is a schematic cross-sectional view showing another example of the configuration of a light-emitting device according to Modification 9 of the present disclosure. FIG. 14C is a schematic plan view showing an example of the configuration of a light-emitting element, a compound semiconductor layer, and a metal film according to Modification 9 of the present disclosure. FIG. 15 is a schematic cross-sectional view showing an example of the configuration of a light-emitting device according to Modification 10 of the present disclosure. FIG. 16 is a schematic cross-sectional view showing an example of the configuration of a light-emitting device according to Modification 11 of the present disclosure. FIG. 17 is a schematic cross-sectional view showing an example of the configuration of a light-emitting device according to Modification 12 of the present disclosure. FIG. 18 is a schematic cross-sectional view showing an example of the configuration of a light-emitting device according to Modification 13 of the present disclosure. FIG. 19A is a schematic cross-sectional view showing an example of the configuration of a light-emitting device according to Modification 14 of the present disclosure. 19B is a cross-sectional view illustrating an enlarged portion of the light-emitting device illustrated in FIG. 19A . FIG. 20A is a cross-sectional schematic view illustrating an example of a configuration of a light-emitting device according to a second embodiment of the present disclosure. FIG. 20B is a cross-sectional view illustrating an enlarged portion of the light-emitting device illustrated in FIG. 20A . FIG. 21 is a schematic view illustrating an example of a planar configuration of a portion of the light-emitting device illustrated in FIG. 20A . FIG. 22 is a perspective view illustrating an example of a configuration of an image display device according to an application example of the present disclosure. FIG. 23 is a schematic view illustrating an example of a wiring layout of the image display device illustrated in FIG. 22 . FIG. 24 is a perspective view illustrating an example of a configuration of an image display device according to an application example of the present disclosure. FIG. 25 is a perspective view illustrating a configuration of a mounting substrate illustrated in FIG. 24 . FIG. 26 is a perspective view illustrating a configuration of a unit substrate illustrated in FIG. 25 . FIG. 27 is a diagram illustrating an example of an image display device according to an application example of the present disclosure.

[0008] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. The following description is a specific example of the present disclosure, and the present disclosure is not limited to the following embodiment. Furthermore, the present disclosure is not limited to the arrangement, dimensions, dimensional ratios, etc. of the components shown in the drawings. The order of description is as follows: 1. First embodiment (example in which dummy semiconductors are provided between light-emitting elements) 1-1. Configuration of light-emitting device 1-2. Method of manufacturing light-emitting device 1-3. Actions and effects 2. Modifications 2-1. Modification 1 (another example of a light-emitting device) 2-2. Modification 2 (another example of a light-emitting device) 2-3. Modification 3 (another example of a light-emitting device) 2-4. Modification 4 (another example of a light-emitting device) 2-5. Modification 5 (another example of a light-emitting device) 2-6. Modification 6 (another example of a light-emitting device) 2-7. Modification 7 (another example of a light-emitting device) 2-8. Modification 8 (another example of a light-emitting device) 2-9. 2. Modification 9 (another example of a light emitting device) 2-10. Modification 10 (another example of a light emitting device) 2-11. Modification 11 (another example of a light emitting device) 2-12. Modification 12 (another example of a light emitting device) 2-13. Modification 13 (another example of a light emitting device) 2-14. Modification 14 (another example of a light emitting device) 3. Second embodiment (an example in which a reflective member is provided around the lens) 4. Application examples

[0009] 1. First Embodiment Fig. 1 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device 1 according to a first embodiment of the present disclosure. Fig. 2 is a schematic diagram illustrating an example of an overall planar configuration of the light-emitting device 1 illustrated in Fig. 1. The light-emitting device 1 is suitably applicable to an image display device known as an LED display (for example, an image display device 100 illustrated in Fig. 26 described below).

[0010] [1-1. Configuration of the Light-Emitting Device] The light-emitting device 1 includes a display unit 100A extending along an XY plane including, for example, mutually orthogonal X-axis and Y-axis directions, and a frame unit 100B provided around the display unit 100A in the XY plane. The display unit 100A includes a plurality of pixels P (e.g., red pixels Pr emitting red light, green pixels Pg emitting green light, and blue pixels Pb emitting blue light) arranged in a two-dimensional array (see FIG. 2). The light-emitting device 1 also has a layered structure in which, for example, a drive substrate 30, a light-emitting unit 10 including a plurality of light-emitting elements 11, and a wavelength conversion unit 20 are sequentially stacked in the Z-axis direction, which is the thickness direction orthogonal to the XY plane.

[0011] The plurality of pixels P (Pr, Pg, Pb) each have a substantially regular hexagonal planar shape as shown in FIG. 3, for example, and are arranged in a honeycomb pattern.

[0012] (Configuration of Light-Emitting Section 10) The light-emitting section 10 includes a plurality of light-emitting elements 11, a plurality of pad electrodes 13, 14, one or more insulating layers 15, one or more insulating layers 16, a plurality of pad sections 17, one or more embedded layers 18, and one or more compound semiconductor layers 19. The light-emitting section 10 further includes a plurality of transparent electrode layers 121, one common electrode 122, one through electrode 123, and one metal film 124 on the light-emitting surface side of the plurality of light-emitting elements 11. Here, the metal film 124 corresponds to a specific example of a "first metal film" according to one aspect of the present disclosure.

[0013] The light-emitting element 11 is provided for each pixel P, for example. That is, one light-emitting element 11 is provided for one pixel P. However, multiple light-emitting elements 11 may be provided for one pixel P. The light-emitting element 11 is a solid-state light-emitting element that emits light in a predetermined wavelength band from the top surface, and is, for example, an LED (Light Emitting Diode) chip. The LED chip refers to an element cut from a wafer used for crystal growth, and is not a packaged type covered with molded resin or the like. The LED chip has a size of, for example, 2 μm to 100 μm, and is what is known as a micro LED.

[0014] The light emitting element 11 includes, for example, a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113, which are stacked in this order from the drive substrate 30 side. The light emitting element 11 further includes, for example, a metal film 114 on the side opposite to the active layer 112 as viewed from the first conductivity type layer 111.

[0015] The first conductivity type layer 111 is formed, for example, from an n-type GaN-based semiconductor material. The active layer 112 has a multiple quantum well structure in which, for example, InGaN and GaN are alternately stacked, and has a light-emitting region within the layer. Light in the blue band of, for example, 430 nm to 500 nm is extracted from the active layer 112. Light with a wavelength corresponding to, for example, the ultraviolet region (ultraviolet light) may also be extracted from the active layer 112. The second conductivity type layer 113 is formed, for example, from a p-type GaN-based semiconductor material. In the light-emitting element 11, the upper surface of the second conductivity type layer 113, i.e., the surface opposite to the active layer 112, serves as the light extraction surface of the light-emitting element 11.

[0016] The metal film 114 is electrically connected to the pad electrode 13. The metal film 114 is in ohmic contact with, for example, the first conductivity type layer 111. The metal film 114 includes, for example, at least one of aluminum (Al) and silver (Ag).

[0017] Each of the transparent electrode layers 121 is provided on the light extraction surface of the corresponding light emitting element 11, i.e., on the surface of the corresponding second conductivity type layer 113 opposite to the active layer 112. Each of the transparent electrode layers 121 is provided so as to cover the second conductivity type layer of the corresponding light emitting element 11 and is in ohmic contact with the second conductivity type layer 113. The transparent electrode layer 121 is formed of a transparent electrode material such as ITO, indium zinc oxide (IZO), tin oxide (SnO), or TiO.

[0018] The common electrode 122 is provided in common to the plurality of light-emitting elements 11 in the display unit 100A. The common electrode 122 is provided so as to cover the transparent electrode layer 121 of each of the plurality of light-emitting elements 11. The common electrode 122 is electrically connected to the transparent electrode layer 121 of each of the plurality of light-emitting elements 11. The common electrode 122 is formed of a transparent electrode material such as ITO, indium zinc oxide (IZO), tin oxide (SnO), or TiO.

[0019] The through electrode 123 applies a voltage to the second conductivity type layer 113 of each of the plurality of light emitting elements 11 via the common electrode 122. The through electrode 123 is provided, for example, in the frame portion 100B, penetrates the planarizing layer 21 and the embedded layer 18 in the Z-axis direction, and is electrically connected to the pad electrode 14B. The through electrode 123 is formed of a transparent electrode material such as ITO, indium zinc oxide (IZO), tin oxide (SnO), or TiO.

[0020] The metal film 124 is provided above the compound semiconductor layer 19, i.e., on the opposite side of the drive substrate 30 as viewed from the compound semiconductor layer 19, and is in contact with the surface of the common electrode 122 opposite to the surface facing the compound semiconductor layer 19 (i.e., the upper surface of the common electrode 122). By providing the metal film 124, it is possible to reduce the resistance of the path of the current flowing through the common electrode 122.

[0021] The insulating layer 15 occupying the display section 100A is formed with a plurality of pad electrodes 13 and a plurality of vias 13V, each provided for each of the plurality of light-emitting elements 11. The pad electrodes 13 and the vias 13V are formed using, for example, copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or an alloy thereof.

[0022] The insulating layer 15 further has a pad electrode 14 and a via 14V formed in the frame portion 100B. The pad electrode 14 is used as a cathode terminal for applying a cathode voltage to the second conductivity type layer 113. The pad electrode 14 and the via 14V are each formed using, for example, copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or an alloy thereof.

[0023] The insulating layer 15 is made of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0024] Further provided on the drive substrate 30 side of the insulating layer 15 are an insulating layer 16 that forms a bonding surface with the drive substrate 30, and a pad portion 17 that is embedded in the insulating layer 16. The insulating layer 16 is made of, for example, silicon oxide (SiO) or silicon nitride (SiN). The pad portion 17 is made of, for example, copper (Cu).

[0025] The embedded layer 18 is intended to flatten the surfaces of the plurality of light emitting elements 11 that face the drive substrate 30. The embedded layer 18 is formed using, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0026] The compound semiconductor layer 19 is provided between the plurality of light-emitting elements 11 and is electrically isolated from the plurality of light-emitting elements 11. The compound semiconductor layer 19 is formed, for example, with the same configuration as the light-emitting elements 11, and therefore has approximately the same thickness as the light-emitting elements 11. The compound semiconductor layer 19 includes, for example, a first conductivity-type layer 111a, an active layer 112a, and a second conductivity-type layer 113a stacked in this order from the drive substrate 30 side. The compound semiconductor layer 19 further includes, for example, a first electrode 114a and a metal film 115a on the side opposite the active layer 112a as viewed from the first conductivity-type layer 111a. The compound semiconductor layer 19 also includes a transparent electrode layer 121a on the second conductivity-type layer 113a.

[0027] 4, the compound semiconductor layer 19 is provided so as to surround each of the plurality of light-emitting elements 11 in the XY plane. A distance L1 between the light-emitting element 11 and the compound semiconductor layer 19 in the XY plane is, for example, 10 nm or more and 500 nm or less. In the example shown in FIG. 4, one compound semiconductor layer 19 is provided in the gap between the plurality of light-emitting elements 11, but each of the plurality of light-emitting elements 11 may be surrounded by a plurality of divided compound semiconductor layers 19.

[0028] (Configuration of Wavelength Conversion Unit 20) The wavelength conversion unit 20 is provided on the light extraction surface side of the light-emitting unit 10. The wavelength conversion unit 20 includes a planarization layer 21, a partition layer 22 having openings 22H for each pixel P (e.g., red pixel Pr, green pixel Pg, and blue pixel Pb), and a wavelength conversion layer 23 formed in the openings 22H. A reflective film 24 is further provided between the partition layer 22 and the wavelength conversion layer 23. A protective layer 25 is further provided on the light extraction surface side of the wavelength conversion layer 23, and a light-reflecting film 26 and a light-absorbing film 27 are provided in the protective layer 25. An on-chip lens layer 28 is further provided on the protective layer 25.

[0029] The planarization layer 21 is intended to planarize the light extraction surface of the light emitting portion 10. The planarization layer 21 is formed of, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0030] The partition wall layer 22 suppresses color mixing due to light leakage between adjacent red pixels Pr, green pixels Pg, and blue pixels Pb. The partition wall layer 22 has, for example, a honeycomb structure, similar to the pixels P (e.g., red pixels Pr, green pixels Pg, and blue pixels Pb). Specifically, the partition wall layer 22 has, for example, a substantially regular hexagonal opening 22H for each of the plurality of pixels (red pixels Pr, green pixels Pg, and blue pixels Pb) arranged in an array (see, for example, FIG. 6Q). In cross-sectional view, the opening 22H has, for example, a surface inclined at an angle of less than 90° with respect to the light extraction surface of the wavelength conversion unit 20. In other words, the partition wall layer 22 has a forward tapered shape between adjacent red pixels Pr, green pixels Pg, and blue pixels Pb in cross-sectional view. The partition layer 22 is preferably formed using a material with high thermal conductivity and electrical conductivity, such as a metal material such as copper (Cu), aluminum (Al), gold (Au), nickel (Ni), or platinum (Pt).

[0031] The wavelength conversion layer 23 is provided on the light extraction surface side of the light-emitting unit 10, and converts light emitted from the active layer 112 of the light-emitting element 11 into light of a predetermined wavelength band (for example, red (R) / green (G) / blue (B)). Specifically, the red pixel Pr is provided with a red wavelength conversion layer 23R that converts light emitted from the active layer 112 into light of a red band (red light), the green pixel Pg is provided with a green wavelength conversion layer 23G that converts light emitted from the active layer 112 into light of a green band (green light), and the blue pixel Pb is provided with a blue wavelength conversion layer 23B that converts light emitted from the active layer 112 into light of a blue band (blue light).

[0032] The wavelength conversion layers 23R, 23G, and 23B can be formed using quantum dots corresponding to each color. Specifically, when red light is obtained, the quantum dots can be selected from, for example, InP, GaInP, InAsP, CdSe, CdZnSe, CdTeSe, or CdTe. When green light is obtained, the quantum dots can be selected from, for example, InP, GaInP, ZnSeTe, ZnTe, CdSe, CdZnSe, CdS, or CdSeS. When blue light is obtained, the quantum dots can be selected from, for example, ZnSe, ZnTe, ZnSeTe, CdSe, CdZnSe, CdS, CdZnS, and CdSeS.

[0033] When blue light is emitted from the active layer 112 as described above, the blue wavelength conversion layer 23B may be formed of a light-transmitting resin layer. That is, a light-transmitting resin layer may be provided as the wavelength conversion layer 23B in the blue pixel Pb, from which light in substantially the same wavelength band as the light emitted from the active layer 112 is extracted. The red pixel Pr and the green pixel Pg, from which light in a wavelength band different from the light emitted from the active layer 112 is extracted, are provided with the wavelength conversion layers 23R and 23G containing the quantum dots described above.

[0034] The reflective film 24 is provided on the side surface of the opening 22H to efficiently extract the color light emitted from the active layer 112 and converted in each wavelength conversion layer 23R, 23G, 23B from the light extraction surface side of the wavelength conversion layer 23. The reflective film 24 is formed using a metal material having optical reflectivity. Examples of the metal material for forming the reflective film 24 include metals having high reflectivity in the visible light range. Specific examples of the material include silver (Ag), aluminum (Al), copper (Cu), gold (Au), platinum (Pt), rhodium (Rh), and alloys thereof.

[0035] It should be noted that the reflective film 24 does not necessarily have to be formed when the partition wall layer 22 is formed using the above-mentioned metal material having light reflectivity.

[0036] The protective layer 25 is for protecting the surface of the light emitting device 1, and is formed using, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0037] A light-reflecting film 26 is provided within the protective layer 25, spanning the red pixel Pr and the green pixel Pg. The light-reflecting film 26 selectively reflects light in a predetermined wavelength band. For example, the light-reflecting film 26 selectively reflects light in the blue wavelength band (blue light), and is provided, for example, above the wavelength conversion layers 23R, 23G provided in the red pixel Pr and the green pixel Pg. This improves the color purity of the red light and green light extracted from the red pixel Pr and the green pixel Pg, respectively. The light-reflecting film 26 is, for example, a distributed Bragg reflector (DBR).

[0038] The light absorbing film 27 selectively absorbs light in a predetermined wavelength band and is provided, for example, on the light reflecting film 26 in the protective layer 25. For example, the light absorbing film 27 selectively absorbs light in the blue wavelength band (blue light) and is provided, for example, above the wavelength conversion layers 23R, 23G provided in the red pixel Pr and the green pixel Pg. This improves the color purity of the red light and green light extracted from the red pixel Pr and the green pixel Pg, respectively. The light absorbing film 27 is, for example, a color filter.

[0039] The on-chip lens layer 28 is provided above the protective layer 25. The on-chip lens layer 28 is made of an optically transparent material, and is made of, for example, a single-layer film made of any of silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride (SiCN), etc., or a stacked film made of two or more of these materials. Here, the on-chip lens layer 28 corresponds to a specific example of a "lens" according to one aspect of the present disclosure.

[0040] (Configuration of Drive Substrate 30) The drive substrate 30 is electrically connected to the plurality of light-emitting elements 11 arranged in the display unit 100A and includes a drive circuit 35 that drives the plurality of light-emitting elements 11. The drive substrate 30 includes a support substrate 31 made of, for example, silicon (Si), an interlayer insulating layer 32 provided on the support substrate 31 and including a plurality of wiring layers (e.g., wiring layers M1, M2, M3, M4, and M5) and vias that electrically connect the wiring layers, an insulating layer 33 that forms a bonding surface with the light-emitting unit 10, and a pad portion 34 embedded in the insulating layer 33. The drive circuit 35 is embedded in, for example, the interlayer insulating layer 32. The drive substrate 30 corresponds to a specific example of a "substrate" according to one aspect of the present disclosure.

[0041] The interlayer insulating layer 32 is formed using, for example, silicon oxide (SiO) or silicon nitride (SiN).

[0042] The wiring layers M1, M2, M3, M4, and M5 and the vias electrically connecting the wiring layers are formed using, for example, copper (Cu), aluminum (Al), tungsten (W), silver (Ag), or alloys thereof. The insulating layer 33 is formed using, for example, silicon oxide (SiO), silicon nitride (SiN), or the like. The pad portion is formed using, for example, copper (Cu).

[0043] 1-2. Method for Manufacturing Light-Emitting Device The light-emitting device 1 of this embodiment can be manufactured, for example, as follows: Figures 5A to 5H show an example of a manufacturing process for the light-emitting device 1.

[0044] First, as shown in FIG. 5A , for example, a sapphire substrate is prepared as a growth substrate 40, and then a first conductivity type layer 111, an active layer 112, and a second conductivity type layer 113 are formed in this order on the growth substrate 40 by epitaxial crystal growth using a method such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).

[0045] Next, the transparent electrode layer 121 is formed so as to be in contact with the second conductivity type layer 113. The transparent electrode layer 121 is obtained by depositing indium tin oxide using, for example, a sputtering method or a vapor deposition method. The deposited transparent electrode layer 121 may be processed into a predetermined shape by a wet etching process.

[0046] 5B , the stacked film 110 including the first conductivity type layer 111, the active layer 112, the second conductivity type layer 113, and the transparent electrode layer 121 is inverted so that the transparent electrode layer 121 faces the support substrate 41, and then bonded to the support substrate 41 via the first embedded layer 181. Thereafter, a metal film 114 is formed on the first conductivity type layer 111, and an embedded layer 182 is formed so as to cover the first embedded layer 181, the stacked film 110, and the metal film 114. By this operation, the stacked film 110 and the metal film 114 are sealed by the embedded layer 18 consisting of the first embedded layer 181 and the second embedded layer 182.

[0047] Next, the portion of the buried layer 18 covering the upper surface of the metal film 114 is removed, and then, as shown in FIG. 5C , an insulating layer 15 in which a plurality of pad electrodes 13 are embedded and an insulating layer 16 in which a plurality of pad portions 17 are embedded are formed in this order on the metal film 114. This results in a light-emitting portion 10 including the stacked film 110, the metal film 114, the insulating layer 15, the insulating layer 16, and the buried layer 18. Thereafter, a separately fabricated drive substrate 30 is bonded to the upper surface of the light-emitting portion 10, i.e., to the upper surface of the insulating layer 16 and the upper surface of the pad portions 17 (so-called hybrid bonding is performed). In this hybrid bonding, the pad portions 17 and 34 are bonded together, and the insulating layer 16 and 33 are bonded together.

[0048] Next, after removing the support substrate 41, the joined light-emitting unit 10 and drive substrate 30 are inverted so that the drive substrate 30 faces downward. Next, as shown in Fig. 5D, a pad electrode 14 is provided at a position where the insulating layer 15 is exposed to the surface.

[0049] 5E , the embedded layer 18 covering the transparent electrode layer 121 is removed to expose the transparent electrode layer 121, and then the laminated film 110 and the metal film 114 are cleaved and singulated by, for example, reactive ion etching (RIE). At this time, the cleavage is performed so that one singulated laminated structure is connected to one pad electrode 13, thereby obtaining a light-emitting element 11. Of the singulated laminated structures, the laminated structure that is not connected to the pad electrode 13 becomes the compound semiconductor layer 19. The gap between the cleaved light-emitting element 11 and the compound semiconductor layer 19 is again filled with the embedded layer 18.

[0050] 5F , a common electrode 122 is formed so as to contact each of the transparent electrode layers 121 provided on the plurality of light-emitting elements 11. Specifically, for example, a planarization layer 21 is formed so as to entirely cover the transparent electrode layer 121 and the embedded layer 18, and then a portion of the planarization layer 21 corresponding to the transparent electrode layer 121 is selectively removed to expose the transparent electrode layer 121. Thereafter, a common electrode 122 is formed so as to cover the planarization layer 21 and the transparent electrode layer 121. Subsequently, a through electrode 123 is provided so as to connect the common electrode 122 and the pad electrode 14. Furthermore, a metal film 124 is formed on the common electrode 122 at a position corresponding to the space between the plurality of light-emitting elements 11.

[0051] Next, a planarization layer 21 is further formed on the surface of the common electrode 122 opposite to the surface facing the light-emitting unit 10, for example, by CVD. This operation flattens the upper surface of the planarization layer 21. Next, a partition layer 22 is formed on the planarization layer 21, for example, by CVD. Subsequently, as shown in FIG. 5G , openings 22H are formed in the partition layer 22 above each light-emitting element 11, for example, by photolithography. Subsequently, an Al film is formed on the upper surface of the partition layer 22 and on the side and bottom surfaces of the openings 22H, for example, by CVD, and then the Al film formed on the upper surface of the partition layer 22 and on the bottom surface of the openings 22H is removed by etch-back to form a reflective film 24 on the side surfaces of the openings 22H.

[0052] 5H , wavelength conversion layers 23 (23R, 23G, 23B) of each color are formed in the opening 22H by using a coating method such as an inkjet method. After that, a protective layer 25 including a light-reflecting film 26 and a light-absorbing film 27 is formed on the partition layer 22 and the wavelength conversion layer 23, and then an on-chip lens layer 28 is bonded to the protective layer 25. This completes the light-emitting device 1 shown in FIG.

[0053] [1-3. Actions and Effects] The light-emitting device 1 of this embodiment includes a plurality of light-emitting elements 11 arranged in an array on a drive substrate 30, and a compound semiconductor layer 19 disposed between the plurality of light-emitting elements 11. The compound semiconductor layer 19 is electrically isolated from each of the plurality of light-emitting elements 11. In the light-emitting device 1, the upper surfaces of the plurality of light-emitting elements 11 opposite the drive substrate 30 and the upper surface of the compound semiconductor layer 19 opposite the drive substrate 30 are located at the same height relative to the upper surface of the drive substrate 30. In particular, the compound semiconductor layer 19 has substantially the same thickness as the plurality of light-emitting elements 11. By arranging the plurality of light-emitting elements 11 and the compound semiconductor layer 19, whose upper surfaces are located at substantially the same height, on the same layer, the common plane formed by the upper surfaces of the plurality of light-emitting elements 11 and the upper surface of the compound semiconductor layer 19 has high flatness. This will be described below.

[0054] In light-emitting devices using micro LEDs, the bonding surface of the light-emitting section needs to be flat to prevent yield issues when bonding the light-emitting section to the drive circuit board during the manufacturing process.Furthermore, the compound semiconductor layer needs to be flat in the process of separating the compound semiconductor layer into individual pixels after bonding the drive circuit board, in order to prevent the common electrode from breaking or becoming highly resistive.

[0055] However, in the method of embedding an insulating layer between multiple light-emitting elements to achieve flatness in the light-emitting portion, there are variations in the thickness of the compound semiconductor layer made of a GaN-based material and the polishing rate, which makes it difficult to achieve flatness because the thickness of the insulating layer is not stable.

[0056] In contrast, in the light-emitting device 1 of the present embodiment, the light-emitting element 11 and the compound semiconductor layer 19, which have approximately the same thickness as described above, are arranged on the same layer. Therefore, the common plane including the upper surfaces of the light-emitting element 11 and the compound semiconductor layer 19 has high flatness. This allows the common electrode 122 to be stably formed on the common plane throughout the light-emitting device 1. This prevents unintended defects, such as breakage of the common electrode 122 or localized reduction in the cross-sectional area of ​​the common electrode 122. As a result, the light-emitting device 1 can be made thinner while avoiding breakage or high resistance of the common electrode 122. Furthermore, the improved flatness of the common plane including the upper surfaces of the light-emitting element 11 and the compound semiconductor layer 19 facilitates the formation of the wavelength conversion section 20 with high dimensional accuracy during the manufacturing process of the light-emitting device 1 of the present embodiment. As a result, the luminance variation among multiple pixels P can be reduced, resulting in excellent light-emitting performance.

[0057] Furthermore, in the light-emitting device 1 of the present embodiment, the compound semiconductor layer 19 provided in the same layer as the plurality of light-emitting elements 11 is electrically isolated from the light-emitting elements 11. This puts the compound semiconductor layer 19 in a floating state, enabling potential control independent of the light-emitting elements 11.

[0058] 2. Modifications Next, modifications 1 to 13 and application examples of the present disclosure will be described. Note that components corresponding to those in the light emitting device 1 of the above embodiment will be assigned the same reference numerals and descriptions thereof will be omitted.

[0059] [2-1. Modification 1] FIG. 6 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1A) according to Modification 1 of the present disclosure.

[0060] In the above-described embodiment, the light-emitting element 11 and the compound semiconductor layer 19 have a structure in which the metal film 114, the first conductivity type layer 111, the active layer 112, and the second conductivity type layer 113 are laminated in this order from the drive substrate 30 side. In contrast, in the light-emitting device 1A of this modified example, the light-emitting element 11 and the compound semiconductor layer 19 have a structure in which the metal film 114, the second conductivity type layer 113, the active layer 112, and the first conductivity type layer 111 are laminated in this order from the drive substrate 30 side.

[0061] Furthermore, in the above embodiment, the transparent electrode layer 121 is in contact with the second conductivity type layer 113, which is the upper layer of the light-emitting element 11, but in the light-emitting device 1A of this modified example, the transparent electrode layer 121 is provided in contact with the first conductivity type layer 111, which is the upper layer of the light-emitting element 11.

[0062] Except for the above points, the configuration of the light emitting device 1A is substantially the same as the configuration of the light emitting device 1 of the above embodiment. Even with this configuration, the light emitting device 1A can achieve the same effects as the above embodiment.

[0063] [2-2. Modification 2] Fig. 7A is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1B-1) according to Modification 2 of the present disclosure. Fig. 7B is a schematic diagram illustrating another example of a cross-sectional configuration of a light-emitting device (light-emitting device 1B-2) according to Modification 2 of the present disclosure.

[0064] In the above embodiment, an example has been shown in which the side surfaces of the light emitting element 11 and the compound semiconductor layer 19 are aligned perpendicularly to the drive substrate 30, but the present disclosure is not limited to this.

[0065] In light emitting device 1B-1 of this modification, the upper portions of light emitting element 11 and compound semiconductor layer 19 may be cut out, for example, as shown in Fig. 7A. In light emitting device 1B-2 of this modification, the lower portions of light emitting element 11 and compound semiconductor layer 19 may be cut out, for example, as shown in Fig. 7B. Furthermore, the side surfaces of light emitting element 11 and compound semiconductor layer 19 may have a taper angle of 60° to 120°.

[0066] Except for the above points, the configurations of the light emitting devices 1B-1 and 1B-2 are substantially the same as the configuration of the light emitting device 1 of the above embodiment. Even with this configuration, the light emitting devices 1B-1 and 1B-2 can achieve the same effects as the above embodiment.

[0067] 8A is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1C) according to Modification 3 of the present disclosure. Fig. 8B is a circuit diagram illustrating a circuit configuration of the light-emitting device (light-emitting device 1C) according to Modification 3 of the present disclosure.

[0068] In the above embodiment, an example was shown in which the compound semiconductor layer 19 was electrically isolated from the light-emitting element 11 and in a floating state, but the present disclosure is not limited to this. In the light-emitting device 1C of this modification, the compound semiconductor layer 19 extending to the frame portion 100B is connected to a readout circuit 50 that is different from the drive circuit 35 that drives the light-emitting element 11. Except for this point, the configuration of the light-emitting device 1C is substantially the same as the configuration of the light-emitting device 1 of the above embodiment.

[0069] In the light emitting device 1C of this modification, the compound semiconductor layer 19 is connected to a readout circuit 50 that is different from the drive circuit 35 that drives the light emitting element 11, and therefore a voltage different from the voltage applied to the light emitting element 11 can be applied to the compound semiconductor layer 19. When a voltage is applied to the compound semiconductor layers 19 arranged on both sides of the light emitting element 11, charges move to both sides of the light emitting element 11, and the path of the current flowing inside the light emitting element 11 is narrowed.

[0070] 9A is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1D) according to Modification 4 of the present disclosure. Fig. 9B is a circuit diagram illustrating a circuit configuration of the light-emitting device (light-emitting device 1D) according to Modification 4 of the present disclosure.

[0071] In the above embodiment, an example was shown in which the compound semiconductor layer 19 was electrically isolated from the light emitting element 11 and in a floating state, but the present disclosure is not limited to this. In the light emitting device 1D of this modification, as shown in Fig. 9B, the compound semiconductor layer 19 is connected to a readout circuit 50 that is different from the drive circuit 35 that drives the light emitting element 11. Except for this point, the configuration of the light emitting device 1D is substantially the same as the configuration of the light emitting device 1 of the above embodiment.

[0072] In the light emitting device 1D of this modification, the compound semiconductor layer 19 is connected to a readout circuit 50 that is different from that of the light emitting element 11, and therefore a voltage different from that of the light emitting element 11 can be applied to the compound semiconductor layer 19. When a voltage is applied to the compound semiconductor layers 19 arranged on both sides of the light emitting element 11, charges move to both sides of the light emitting element 11, and the current path inside the light emitting element 11 is narrowed.

[0073] [2-5. Modification 5] Fig. 10A is a schematic diagram showing an example of a planar configuration of a plurality of light-emitting elements 11 and a compound semiconductor layer 19 according to Modification 5 of the present disclosure (light-emitting device 1E). Fig. 10B is a schematic diagram showing another example of a planar configuration of a plurality of light-emitting elements 11 and a compound semiconductor layer 19 according to Modification 5 of the present disclosure (light-emitting device 1E). Fig. 10C is a schematic diagram showing another example of a planar configuration of a plurality of light-emitting elements 11 and a compound semiconductor layer 19 according to Modification 5 of the present disclosure (light-emitting device 1E). Fig. 10D is a schematic diagram showing another example of a planar configuration of a plurality of light-emitting elements 11 and a compound semiconductor layer 19 according to Modification 5 of the present disclosure (light-emitting device 1E).

[0074] In the above embodiment, an example is shown in which a compound semiconductor layer 19 surrounds a plurality of light-emitting elements 11 arranged in an array in a substantially circular shape in a plan view along the circumferential direction, but this is not limited to this.

[0075] In the light emitting device 1E of this modification, the plurality of light emitting elements 11 may be arranged in a delta configuration, as shown in Fig. 10A . In the light emitting device 1E of this modification, the plurality of substantially circular light emitting elements 11 may be arranged in an array in a plan view, as shown in Fig. 10B , and the compound semiconductor layer 19 may surround the plurality of substantially polygonal light emitting elements 11 arranged in an array in a plan view, as shown in Fig. 10C . In the light emitting device 1E of this modification, the compound semiconductor layer 19 may be arranged between the plurality of light emitting elements 11, as shown in Fig. 10D .

[0076] Except for the above points, the configuration of the light emitting device 1E is substantially the same as the configuration of the light emitting device 1 of the above embodiment. Even with this configuration, the light emitting device 1E can achieve the same effects as the above embodiment.

[0077] [2-6. Modification 6] Fig. 11A is a schematic diagram showing an example of a planar configuration (light emitting device 1F) of a plurality of light emitting elements 11 and a compound semiconductor layer 19 according to Modification 6 of the present disclosure. Fig. 11B is a schematic diagram showing an example of a cross-sectional configuration of light emitting device 1F in a region X shown in Fig. 11A.

[0078] In the light emitting device 1 of the above embodiment, an example in which one compound semiconductor layer 19 is provided in the display section 100A has been shown, but the present invention is not limited to this.

[0079] 11A , in the light-emitting device 1F of this modification, the display unit 100A is divided into pixel regions R1 and R2. The compound semiconductor layer is divided by a separation groove 19H along the boundary between the pixel regions R1 and R2, and a compound semiconductor layer 191 is provided in the pixel region R1, and a compound semiconductor layer 192 is provided in the pixel region R2. Different voltages may be applied to the compound semiconductor layer 191 and the compound semiconductor layer 192.

[0080] Except for the above points, the configuration of the light emitting device 1F is substantially the same as the configuration of the light emitting device 1 of the above embodiment. Even with this configuration, the light emitting device 1F can achieve the same effects as the above embodiment.

[0081] [2-7. Modification 7] FIG. 12 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1G) according to Modification 7 of the present disclosure.

[0082] In the light emitting device 1 of the above embodiment, an example in which a compound semiconductor layer 19 is provided between the plurality of light emitting elements 11 has been shown, but the present invention is not limited to this. In the light emitting device 1G of this modified example, an embedded layer 19a having approximately the same thickness as the light emitting elements 11 is provided between the plurality of light emitting elements 11. The embedded layer 19a is formed using, for example, an organic film or an inorganic material such as asmorphous silicon.

[0083] Except for the above points, the configuration of the light emitting device 1G is substantially the same as the configuration of the light emitting device 1 of the above embodiment. Even with this configuration, the light emitting device 1G can achieve the same effects as the above embodiment.

[0084] [2-8. Modification 8] Fig. 13A is a schematic diagram showing an example of the cross-sectional configuration of the light-emitting unit 10 and the drive substrate 30 according to Modification 8 of the present disclosure (light-emitting device 1H). Fig. 13B is a schematic diagram showing another example of the cross-sectional configuration of the light-emitting unit 10 and the drive substrate 30 according to Modification 8 of the present disclosure (light-emitting device 1H).

[0085] In the light emitting device 1 of the above embodiment, the compound semiconductor layer 19 is electrically isolated from the light emitting element 11 and is in a floating state, but the present invention is not limited to this.

[0086] 13A, in the light emitting device 1H of this modification, the compound semiconductor layer 19 is connected to the drive substrate 30 via a connection electrode 125. The connection electrode 125 may be provided in contact with the transparent electrode layer above the compound semiconductor layer 19, or may be inserted inside the compound semiconductor layer 19 as shown in FIG.

[0087] In the light emitting device 1H of this modification, the display unit 100A is divided into pixel regions R1 and R2, similarly to modification 6. Different voltages may be applied to the compound semiconductor layers 19 in the pixel regions R1 and R2.

[0088] Except for the above points, the configuration of the light emitting device 1H is substantially the same as the configuration of the light emitting device 1 of the above embodiment. Even with this configuration, the light emitting device 1H can achieve the same effects as the above embodiment.

[0089] [2-9. Modification 9] Fig. 14A is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1I-1) according to Modification 9 of the present disclosure. Fig. 14B is a schematic diagram illustrating another example of a cross-sectional configuration of a light-emitting device (light-emitting device 1I-2) according to Modification 9 of the present disclosure. Fig. 14C is a schematic diagram illustrating an example of a planar configuration (light-emitting device 1I) of a plurality of light-emitting elements 11, a compound semiconductor layer 19, and a metal film 194 according to Modification 9 of the present disclosure. Here, metal film 194 corresponds to a specific example of a "second metal film" according to one aspect of the present disclosure.

[0090] In the light-emitting device 1I according to Variation 9, a metal film 194 is provided between the light-emitting element 11 and the compound semiconductor layer 19. The metal film 194 is formed using a metal material having optical reflectivity. Examples of metal materials for forming the metal film 194 include metals with high reflectivity in the visible light range. Specific examples of materials for the metal film 194 include aluminum (Al), tungsten (W), silver (Ag), titanium (Ti), cobalt (Co), nickel (Ni), copper (Cu), platinum (Pt), titanium nitride (TiN), and alloys thereof. As shown in FIG. 14B , the metal film 194 may have a tapered portion. As shown in FIG. 14C , the distance between the light-emitting element 11 and the compound semiconductor layer 19 in the XY plane is, for example, 200 nm or more and 500 nm or less. Except for this point, the configuration of the light-emitting device 1I is substantially the same as the configuration of the light-emitting device 1 according to the above embodiment.

[0091] The light emitting device 1I can be manufactured using the same method as the light emitting device 1 up to the stage of obtaining the light emitting element 11 and the compound semiconductor layer 19 from the singulated stacked structure. In the light emitting device 1I, for example, a SiN film is formed between the light emitting element 11 and the compound semiconductor layer 19 by, for example, a CVD method or an atomic layer deposition (ALD) method. Next, a metal film 194 is formed by, for example, a CVD method or an atomic layer deposition (ALD) method, and shaped by, for example, dry etching. Subsequently, for example, a SiN film is formed on the upper surface of the metal film 194. After this, the light emitting device 1I can be manufactured using the same method as the light emitting device 1.

[0092] In the light emitting device 1I of this modified example, by providing a metal film 194 between the light emitting element 11 and the compound semiconductor layer 19, stray light and leaked light are reflected while maintaining flatness, and therefore, improvement in light extraction efficiency can be expected.

[0093] [2-10. Modification 10] FIG. 15 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1J) according to Modification 10 of the present disclosure.

[0094] In the light-emitting device 1J according to the tenth modification, a metal film 194a is provided between the light-emitting element 11 and the compound semiconductor layer 19. The metal film 194a is formed using a metal material having optical reflectivity. Examples of metal materials that can form the metal film 194a include metals with high reflectivity in the visible light range. Specific examples of materials that can form the metal film 194a include aluminum (Al), tungsten (W), silver (Ag), titanium (Ti), cobalt (Co), nickel (Ni), copper (Cu), platinum (Pt), titanium nitride (TiN), and alloys thereof. The metal film 194a is longer in the film thickness direction than the light-emitting element 11 and the compound semiconductor layer 19 and is in contact with the common electrode 122. A voltage is applied to the metal films 194a disposed on both sides of the light-emitting element 11 via the common electrode 122.

[0095] Except for the above points, the configuration of the light emitting device 1J is substantially the same as the configuration of the light emitting device 1 of the above embodiment. Here, the metal film 194a corresponds to a specific example of a "second metal film" as one aspect of the present disclosure.

[0096] The light emitting device 1J can be manufactured using the same method as the light emitting device 1 up to the stage of obtaining the light emitting element 11 and the compound semiconductor layer 19 from the singulated laminated structure. In the light emitting device 1J, for example, a SiN film is formed between the light emitting element 11 and the compound semiconductor layer 19 by, for example, a CVD method or an atomic layer deposition (ALD) method. Next, a metal film 194a is formed by, for example, a CVD method or an atomic layer deposition (ALD) method, and shaped as shown in FIG. 15 by, for example, dry etching. Subsequently, for example, a SiN film is formed on the upper surface of the metal film 194a. After this, the light emitting device 1J can be manufactured using the same method as the light emitting device 1.

[0097] In the light emitting device 1J of this modification, as described above, a voltage is applied via the common electrode 122 to the metal films 194a disposed on both sides of the light emitting element 11, causing charges to move to both sides of the light emitting element 11, thereby narrowing the current path inside the light emitting element 11. In the light emitting device 1J of this modification, by providing the metal film 194a between the light emitting element 11 and the compound semiconductor layer 19, stray light and leaked light are reflected while maintaining flatness, and an improvement in light extraction efficiency can be expected.

[0098] [2-11. Modification 11] FIG. 16 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1K) according to Modification 11 of the present disclosure.

[0099] In the light-emitting device 1K according to the eleventh modification, a T-shaped metal film 194b is provided between the light-emitting element 11 and the compound semiconductor layer 19. The metal film 194b is formed using a light-reflective metal material. Examples of the metal material for the metal film 194b include metals with high reflectivity in the visible light range. Specific examples of the metal film 194b include aluminum (Al), tungsten (W), silver (Ag), titanium (Ti), cobalt (Co), nickel (Ni), copper (Cu), platinum (Pt), titanium nitride (TiN), and alloys thereof. The metal film 194b passes over the compound semiconductor layer 19, as shown in FIG. 16 , is provided on both sides of the compound semiconductor layer 19, and is connected to the drive substrate 30.

[0100] Except for the above points, the configuration of the light emitting device 1K is substantially the same as the configuration of the light emitting device 1 of the above embodiment. Here, the metal film 194b corresponds to a specific example of a "second metal film" as one aspect of the present disclosure.

[0101] The light emitting device 1K can be manufactured using the same method as the light emitting device 1 up to the stage of obtaining the light emitting element 11 and the compound semiconductor layer 19 from the singulated laminated structure. In the light emitting device 1K, a SiN film, for example, is formed between the light emitting element 11 and the compound semiconductor layer 19 by, for example, a CVD method or an atomic layer deposition (ALD) method. Next, a metal film 194b is formed by, for example, a CVD method or an atomic layer deposition (ALD) method, and shaped as shown in FIG. 16 by, for example, dry etching. Subsequently, a SiN film, for example, is formed on the upper surface of the metal film 194b. After this, the light emitting device 1K can be manufactured using the same method as the light emitting device 1.

[0102] In the light emitting device 1K of this modification, as described above, when a voltage is applied to the metal films 194b arranged on both sides of the light emitting element 11, charges move to both sides of the light emitting element 11, thereby narrowing the current path inside the light emitting element 11. In the light emitting device 1K of this modification, by providing the metal film 194b between the light emitting element 11 and the compound semiconductor layer 19, stray light and leaked light are reflected while maintaining flatness, and an improvement in light extraction efficiency can be expected.

[0103] [2-12. Modification 12] FIG. 17 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1L) according to Modification 12 of the present disclosure.

[0104] In the light-emitting device 1L according to the twelfth modification, a metal film 194c having an inverted T shape is provided between the light-emitting element 11 and the compound semiconductor layer 19, and is connected to the drive substrate 30. The metal film 194c is formed using a metal material having optical reflectivity. Examples of the metal material forming the metal film 194c include metals having high reflectivity in the visible light range. Specific examples of the material for the metal film 194c include aluminum (Al), tungsten (W), silver (Ag), titanium (Ti), cobalt (Co), nickel (Ni), copper (Cu), platinum (Pt), titanium nitride (TiN), and alloys thereof.

[0105] Except for the above points, the configuration of the light emitting device 1L is substantially the same as the configuration of the light emitting device 1 of the above embodiment. Here, the metal film 194c corresponds to a specific example of a "second metal film" as one aspect of the present disclosure.

[0106] The light emitting device 1L can be manufactured using the same method as the light emitting device 1 up to the stage of obtaining the light emitting element 11 and the compound semiconductor layer 19 from the singulated laminated structure. In the light emitting device 1L, for example, a SiN film is formed between the light emitting element 11 and the compound semiconductor layer 19 by, for example, a CVD method or an atomic layer deposition (ALD) method. Next, a metal film 194b is formed by, for example, a CVD method or an atomic layer deposition (ALD) method, and shaped by, for example, dry etching. Subsequently, for example, a SiN film is formed on the upper surface of the metal film 194c. After this, the light emitting device 1L can be manufactured using the same method as the light emitting device 1.

[0107] In the light emitting device 1L of this modification, as described above, when a voltage is applied to the metal films 194c arranged on both sides of the light emitting element 11, charges move to both sides of the light emitting element 11, thereby narrowing the current path inside the light emitting element 11. In the light emitting device 1L of this modification, by providing the metal film 194c between the light emitting element 11 and the compound semiconductor layer 19, stray light and leaked light are reflected while maintaining flatness, and an improvement in light extraction efficiency can be expected.

[0108] [2-13. Modification 13] FIG. 18 is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1M) according to Modification 13 of the present disclosure.

[0109] In the light emitting device 1M according to the thirteenth modification, the light emitting element 11 has a mesa structure. Furthermore, in the light emitting device 1M, the compound semiconductor layer 19 may have side surfaces that are inclined at an angle of 90° or less, or may have a tapered portion. Except for this point, the configuration of the light emitting device 1M is substantially the same as the configuration of the light emitting device 1 according to the above embodiment.

[0110] Light emitting device 1M can be manufactured in the same manner as light emitting device 1 up to the stage where, after removing support substrate 41, it is inverted so that drive substrate 30 is at the bottom. In light emitting device 1M, a mask layer is provided on the surface of embedded layer 18, and light emitting element 11 and compound semiconductor layer 19 are shaped by dry etching. After this, light emitting device 1M can be manufactured in the same manner as light emitting device 1.

[0111] In the light emitting device 1M of this modification, the light emitting element 11 has a mesa structure, which is expected to improve the light extraction efficiency while maintaining flatness.

[0112] [2-14. Modification 14] Fig. 19A is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device (light-emitting device 1N) according to Modification 14 of the present disclosure. Fig. 19B is an enlarged cross-sectional view illustrating a portion of the light-emitting device 1N illustrated in Fig. 19A.

[0113] The light-emitting device 1N according to Modification 14 further includes a reflective film 60. Except for this, the configuration of the light-emitting device 1N is substantially the same as that of the light-emitting device 1M according to Modification 13. The reflective film 60 covers the side surface 19SS of the compound semiconductor layer 19 facing the light-emitting element 11. The reflective film 60 may also be provided to cover the top surface 19US of the compound semiconductor layer 19. As shown in FIG. 19B , the side surface 19SS of the compound semiconductor layer 19 is preferably inclined at an angle of 45° or more and less than 90° with respect to the top surface of the light-emitting element 11, i.e., the light-emitting surface 11ES extending along the XY plane. Therefore, the reflective film 60 covering the side surface 19SS of the compound semiconductor layer 19 includes a reflective surface 60RS ( FIG. 19B ) inclined at an angle of more than 45° and less than 90° with respect to the light-emitting surface 11ES. The reflective surface 60RS is, for example, the interface between the metal layer 61 and the first dielectric film 62. The side surface 11SS of the light emitting element 11 may also be inclined at an angle of 45° or more and less than 90° with respect to the light emitting surface 11ES.

[0114] 19B , the reflective film 60 includes, for example, a metal layer 61, a first dielectric film 62, and a second dielectric film 63, in this order from the side surface 19SS. That is, the reflective film 60 has a structure in which a multilayer dielectric film is stacked on the metal layer 61. The first dielectric film 62 has a refractive index n1. The second dielectric film 63 has a refractive index n2 higher than the refractive index n1 (n2>n1). Note that all refractive indices in this specification are those with respect to the d-line (λ=587.56 nm), which is the reference wavelength.

[0115] 19B illustrates an example in which two dielectric films (a first dielectric film 62 and a second dielectric film 63) are stacked on the metal layer 61, but the number of dielectric films is not limited to two. Three or more layers of first dielectric films 62 having a relatively low refractive index and second dielectric films 63 having a relatively high refractive index may be stacked alternately on the metal layer 61.

[0116] When the emitted light of the light-emitting element 11 is visible light having a wavelength of 430 nm to 690 nm, the refractive index of each of the first dielectric film 62 and the second dielectric film 63 can be set to, for example, a range of 1.4 to 2.7. In this case, the film thickness of each of the first dielectric film 62 and the second dielectric film 63 can be set to, for example, a range of 35 nm to 125 nm.

[0117] The metal layer 61 is formed using a metal material having optical reflectivity. Examples of the metal material forming the metal layer 61 include metals having high reflectivity in the visible light region. Specifically, the metal layer 61 includes at least one of Ag (silver), Au (gold), Al (aluminum), Cu (copper), platinum (Pt), rhodium (Rh), Ti (titanium), Ta (tantalum), and W (tungsten).

[0118] Each of the first dielectric film 62 and the second dielectric film 63 is made of, for example, SiO ２ , SiN, Al ２ O ３ , TiO ２ , Nb ２ O ５ , and Ta ２ O ５It contains at least one of the following.

[0119] Light emitting device 1N can be manufactured using the same method as light emitting device 1M up to the stage of providing a mask layer on the surface of embedded layer 18 and forming light emitting element 11 and compound semiconductor layer 19 by dry etching. In light emitting device 1N, metal layer 61, first dielectric film 62, and second dielectric film 63 are formed in this order so as to selectively cover side surface 19SS and top surface 19US of formed compound semiconductor layer 19. After this, light emitting device 1N can be manufactured using the same method as light emitting device 1M.

[0120] According to the light emitting device 1N of this modified example, a reflective film 60 is provided to cover the compound semiconductor layer 19 provided between the light emitting elements 11, and thus a further improvement in light extraction efficiency can be expected. That is, in the light emitting device 1N, even if light emitted from the light emitting surface 11ES of a certain light emitting element 11 leaks into a gap between the light emitting element 11 and another light emitting element 11 adjacent to the certain light emitting element 11, the light is reflected by the reflective film 60 and reused as reflected light. Furthermore, it is possible to prevent the light emitted from the light emitting surface 11ES of a certain light emitting element 11 from entering another light emitting element 11 adjacent to the certain light emitting element 11, thereby preventing color mixing.

[0121] 3. Second Embodiment Fig. 20A is a schematic diagram illustrating an example of a cross-sectional configuration of a light-emitting device 2 according to a second embodiment of the present disclosure. Fig. 20B is an enlarged cross-sectional view of a portion of the light-emitting device 2 shown in Fig. 20A. Furthermore, Fig. 21 is a schematic diagram illustrating an example of a planar configuration of a portion of the light-emitting device 2 shown in Fig. 20A. Similar to the light-emitting device 1 according to the first embodiment, the light-emitting device 2 is suitably applicable to an image display device known as a so-called LED display (for example, the image display device 100 shown in Fig. 26 described below).

[0122] As shown in FIG. 20A , the light-emitting device 2 includes an on-chip lens layer 28. The on-chip lens layer 28 includes a plurality of microlenses 29 corresponding to the plurality of light-emitting elements 11. That is, one microlens 29 is provided for each light-emitting element 11. Furthermore, a plurality of reflectors 70 are provided between adjacent microlenses 29. Each of the plurality of reflectors 70 is provided on the opposite side of the support substrate 31 from the plurality of light-emitting elements 11, at least in part around a corresponding one of the plurality of microlenses 29. The microlenses 29 and the reflectors 70 are provided on the same layer. Each of the plurality of reflectors 70 is provided so as to face its corresponding one of the microlenses 29. The plurality of reflectors 70 includes, in order from the furthest position as viewed from the microlens 29, a metal 71, a first dielectric film 72 having a refractive index n3 at the reference wavelength, and a second dielectric film 73 having a refractive index n4 higher than the refractive index n3 at the reference wavelength (n4>n3). Except for these points, the configuration of the light emitting device 2 is substantially the same as the configuration of the light emitting device 1M of the thirteenth modification described in the first embodiment.

[0123] 20B illustrates an example in which two dielectric films (a first dielectric film 72 and a second dielectric film 73) are stacked on the metal 71, but the number of dielectric films is not limited to two. Three or more layers of first dielectric films 72 having a relatively low refractive index and second dielectric films 73 having a relatively high refractive index may be stacked alternately on the metal 71.

[0124] In the example shown in Figures 20A and 20B, the light-emitting device 2 includes a wall portion 74 between multiple microlenses 29, and each of the multiple reflectors 70 is provided to cover a side surface 74SS of the wall portion 74. That is, in the light-emitting device 2, a metal 71, a first dielectric film 72, and a second dielectric film 73 are stacked in this order on the side surface 74SS of the wall portion 74. While a reflector 70 may also be provided on the upper surface 74US of the wall portion 74, it is preferable that no reflector 70 be present on the upper surface 74US. This is to prevent external light, etc., from being scattered in unintended directions when it enters the reflector 70. In this case, if no reflector 70 is present on the upper surface 74US, the wall portion 74 may be made of a light-absorbing material that absorbs the emitted light from the light-emitting element 11 and external light. Furthermore, in the light-emitting device 2 of this embodiment, the metal 71 of the reflector 70 may also serve as the wall portion 74.

[0125] 20A and 20B, the side surface 74SS of the wall portion 74 is preferably inclined at an angle of 45° or more and less than 90° with respect to the upper surface of the light-emitting element 11, i.e., the light-emitting surface 11ES (XY plane) extending along the XY plane. Therefore, the reflector 70 covering the side surface 74SS of the wall portion 74 includes a reflective surface 70RS (FIG. 20B) inclined at an angle of more than 45° and less than 90° with respect to the light-emitting surface 11ES. The reflective surface 70RS is, for example, the interface between the metal 71 and the first dielectric film 72.

[0126] 20A, 20B, and 21 illustrate a red pixel Pr that emits red light, a green pixel Pg that emits green light, and a blue pixel Pb that emits blue light. The red pixel Pr is provided with a microlens 29R and a reflector 70R, the green pixel Pg is provided with a microlens 29G and a reflector 70G, and the blue pixel Pb is provided with a microlens 29B and a reflector 70B. In a plan view, the reflectors 70R, 70G, and 70B are each provided in an annular shape along the XY plane so as to surround the periphery of the microlens 29R, 29G, and 29B.

[0127] The reflector 70R in the red pixel Pr has a higher reflectance for red light than both the reflectance for green light and the reflectance for blue light. Similarly, the reflector 70G in the green pixel Pg has a higher reflectance for green light than both the reflectance for red light and the reflectance for blue light. The reflector 70B in the blue pixel Pb has a higher reflectance for blue light than both the reflectance for red light and the reflectance for green light. That is, the metal 71R, first dielectric film 72R, and second dielectric film 73R in the reflector 70R have materials and thicknesses suitable for the red light extracted from the red pixel Pr. The metal 71G, first dielectric film 72G, and second dielectric film 73G in the reflector 70G have materials and thicknesses suitable for the green light extracted from the green pixel Pg. The metal 71B, first dielectric film 72B, and second dielectric film 73B in the reflector 70B have materials and thicknesses suitable for the blue light extracted from the blue pixel Pb. Therefore, at least one of the material and thickness of the metal 71, the material and thickness of the first dielectric film 72, and the material and thickness of the second dielectric film 73 in each of the reflectors 70R, 70G, and 70B may be different from each other.

[0128] Specifically, for example, the metals 71R, 71G, and 71B are all made of aluminum films with a thickness of 70 nm, and the first dielectric films 72R, 72G, and 72B are all made of SiO ２ The first dielectric films 72R, 72G, and 72B may be made of SiN and the thicknesses of the first dielectric films 72R, 72G, and 72B may be 101 nm, 77 nm, and 70 nm, respectively, and the second dielectric films 73R, 73G, and 73B may be made of SiN and the thicknesses of the second dielectric films 73R, 73G, and 72B may be 77 nm, 68 nm, and 53 nm, respectively.

[0129] The metal 71 is formed using a metal material having optical reflectivity. Examples of the metal material forming the metal 71 include metals having high reflectivity in the visible light region. Specifically, the metal 71 includes at least one of Ag (silver), Au (gold), Al (aluminum), Cu (copper), platinum (Pt), rhodium (Rh), Ti (titanium), Ta (tantalum), and W (tungsten). The first dielectric film 72 and the second dielectric film 73 are each formed of, for example, SiO ２ , SiN, Al ２ O ３ , TiO ２ , Nb ２ O ５ , and Ta ２ O ５ It contains at least one of the following.

[0130] According to the light-emitting device 2 of the present embodiment, the reflector 70 is provided around the microlens 29 corresponding to each of the plurality of light-emitting elements 11, which is expected to improve the light extraction efficiency in the front direction. In addition, color mixing between the plurality of adjacent pixels P can be effectively suppressed.

[0131] 22 is a perspective view showing an example of a schematic configuration of an image display device (image display device 100). The image display device 100 is a so-called LED display, and uses a light-emitting device according to the present disclosure (e.g., light-emitting device 1) as a display pixel. As shown in FIG. 22 , the image display device 100 includes a display panel 120 and a control circuit 140 that drives the display panel 120.

[0132] The display panel 120 is formed by stacking a mounting substrate 120A and an opposing substrate 120B. The surface of the opposing substrate 120B serves as an image display surface, with a display area (display section 100A) in the center and a frame section 100B, which is a non-display area, around the display area.

[0133] 23 shows an example of a wiring layout in a region of the surface of the mounting substrate 120A facing the counter substrate 120B, corresponding to the display unit 100A. In the region of the surface of the mounting substrate 120A corresponding to the display unit 100A, a plurality of data wirings 134 are formed extending in a predetermined direction and arranged in parallel at a predetermined pitch, as shown in FIG. 20 . In the region of the surface of the mounting substrate 120A corresponding to the display unit 100A, a plurality of scan wirings 135 are further formed extending in a direction intersecting (e.g., perpendicular to) the data wirings 134 and arranged in parallel at a predetermined pitch. The data wirings 134 and the scan wirings 135 are made of a conductive material such as Cu.

[0134] The scan lines 135 are formed, for example, in the outermost layer, for example, on an insulating layer (not shown) formed on the surface of the substrate. The substrate of the mounting board 120A is made of, for example, a silicon substrate or a resin substrate, and the insulating layer on the substrate is made of, for example, SiN, SiO, aluminum oxide (AlO), or a resin material. On the other hand, the data lines 134 are formed in a layer different from the outermost layer including the scan lines 135 (for example, a layer below the outermost layer), for example, in an insulating layer on the substrate.

[0135] The display pixels 136 are located near the intersections of the data lines 134 and the scan lines 135, and a plurality of the display pixels 136 are arranged in a matrix within the display unit 100A. Each of the display pixels 136 is equipped with, for example, one of the color pixels Pr, Pg, and Pb of the light-emitting device 1.

[0136] The light-emitting device 1 is provided with a pair of terminal electrodes, for example, one for each of the color pixels Pr, Pg, and Pb, or one common and the other for each of the color pixels Pr, Pg, and Pb. One of the terminal electrodes is electrically connected to a data wiring 134, and the other is electrically connected to a scan wiring 135. For example, one of the terminal electrodes is electrically connected to a pad electrode 134B at the tip of a branch 134A provided on the data wiring 134. Furthermore, for example, the other terminal electrode is electrically connected to a pad electrode 135B at the tip of a branch 135A provided on the scan wiring 135.

[0137] Each of the pad electrodes 134B, 135B is formed, for example, on the outermost layer and is provided at a location where each of the light emitting devices 1 is mounted, as shown in Fig. 23. Here, the pad electrodes 134B, 135B are made of a conductive material such as Au (gold).

[0138] The mounting substrate 120A is further provided with, for example, a plurality of support pillars (not shown) that regulate the distance between the mounting substrate 120A and the counter substrate 120B. The support pillars may be provided in the region facing the display unit 100A, or in the region facing the frame unit 100B.

[0139] The counter substrate 120B is made of, for example, a glass substrate or a resin substrate. The surface of the counter substrate 120B facing the light-emitting device 1 may be flat, but is preferably roughened. The roughened surface may be provided over the entire area facing the display unit 100A, or may be provided only in the area facing the display pixels 136. The roughened surface has fine irregularities that allow light emitted from the color pixels Pr, Pg, and Pb to enter the roughened surface. The irregularities on the roughened surface can be created by, for example, sandblasting or dry etching.

[0140] The control circuit 140 drives each display pixel 136 (each light-emitting device 1) based on a video signal. The control circuit 140 is configured, for example, with a data driver that drives the data wiring 134 connected to the display pixels 136 and a scan driver that drives the scan wiring 135 connected to the display pixels 136. For example, as shown in FIG. 22 , the control circuit 140 may be provided separately from the display panel 120 and connected to the mounting substrate 120A via wiring, or may be mounted on the mounting substrate 120A.

[0141] 24 is a perspective view showing another configuration example (image display device 200) of an image display device using a light-emitting device (e.g., light-emitting device 1) according to the present disclosure. The image display device 200 is a so-called tiling display that uses a plurality of light-emitting devices that use LEDs as light sources. As shown in FIG. 24 , the image display device 200 includes, for example, a display panel 220 and a control circuit 240 that drives the display panel 220.

[0142] The display panel 220 is formed by stacking a mounting substrate 220A and a counter substrate 220B on top of each other. The surface of the counter substrate 220B serves as an image display surface, with a display section in the center and a frame section surrounding the display section, which is a non-display area (neither of which is shown). The counter substrate 220B is disposed, for example, in a position opposite the mounting substrate 220A with a predetermined gap therebetween. Note that the counter substrate 220B may also be in contact with the top surface of the mounting substrate 220A.

[0143] Fig. 25 is a schematic diagram showing an example of the configuration of the mounting substrate 220A. For example, as shown in Fig. 25, the mounting substrate 220A is configured from a plurality of unit substrates 250 arranged in a tiled pattern. Note that Fig. 25 shows an example in which the mounting substrate 220A is configured from nine unit substrates 250, but the number of unit substrates 250 may be ten or more, or eight or less.

[0144] 26 shows an example of the configuration of a unit substrate 250. The unit substrate 250 has, for example, a plurality of light-emitting devices 1 arranged in a tiled pattern and a support substrate 260 that supports each of the light-emitting devices 1. Each unit substrate 250 also has a control substrate (not shown). The support substrate 260 is made of, for example, a metal frame (metal plate) or a wiring substrate. If the support substrate 260 is made of a wiring substrate, it can also serve as the control substrate. In this case, at least one of the support substrate 260 and the control substrate is electrically connected to each of the light-emitting devices 1.

[0145] 27 shows the appearance of a transparent display 300. The transparent display 300 has, for example, a display unit 310, an operation unit 311, and a housing 312. The display unit 310 uses a light-emitting device (for example, the light-emitting device 1) of the present disclosure. The transparent display 300 can display images and text information while allowing the background of the display unit 310 to be seen through.

[0146] In the transparent display 300, a light-transmitting substrate is used as the mounting substrate. Each electrode provided in the light-emitting device 1 is formed using a light-transmitting conductive material, similar to the mounting substrate. Alternatively, each electrode is structured to be less visible by supplementing the wiring width or reducing the wiring thickness. Furthermore, the transparent display 300 can display black by, for example, overlaying a liquid crystal layer equipped with a drive circuit, and switching between transparent and black display is possible by controlling the light distribution direction of the liquid crystal.

[0147] Although the present technology has been described above with reference to several embodiments, Modifications 1 to 14, and application examples, the present technology is not limited to the above-described embodiments, etc., and various modifications are possible. For example, in the above-described embodiments, etc., examples have been shown in which the light emitted from the light-emitting element 11 is blue light or ultraviolet light, but the present technology is not limited to this. For example, the light-emitting device 1 may use a light-emitting element that emits two or more types of light, such as blue light and green light, or ultraviolet light and green light.

[0148] Furthermore, in the above embodiments, each component constituting the light emitting device 1 is specifically described, but it is not necessary to include all components, and other components may also be included. For example, in the above embodiments, an example is shown in which there are multiple light emitting elements 11, but this is not limiting. For example, the light emitting device 1 may include only one light emitting element 11.

[0149] Furthermore, the aspect described in the first embodiment and the aspect described in the second embodiment may be combined in any manner. For example, in the light-emitting device 2 described in the second embodiment, a reflective film 60 may be provided on the compound semiconductor layer 19 described in the first embodiment. Furthermore, although the second embodiment illustrates the case where the light-emitting device 2 includes the microlens 29, the present disclosure is not limited to this. For example, instead of the microlens 29, a component having another lens function, such as a diffractive lens, may be disposed.

[0150] The effects described in this specification are merely examples and are not limited to those described, and other effects may also be obtained.

[0151] The present technology can also be configured as follows. According to the present technology configured as follows, by providing a compound semiconductor layer having substantially the same thickness as a plurality of light-emitting elements in the same layer as the light-emitting elements, the thickness between pixels is stabilized, thereby achieving flatness. This makes it easy to form a wavelength conversion section on the light-emitting elements and the compound semiconductor layer during the manufacturing process of the light-emitting device of the present embodiment. As a result, high reliability is achieved. (1) A light-emitting device comprising: a substrate; one or more light-emitting elements provided on the substrate, each having the same layered structure; and a compound semiconductor layer provided on the substrate around at least a portion of the periphery of the one or more light-emitting elements, electrically isolated from the one or more light-emitting elements, and having the layered structure, wherein upper surfaces of the one or more light-emitting elements opposite the substrate and upper surfaces of the compound semiconductor layer opposite the substrate are at the same height relative to an upper surface of the substrate. (2) The light-emitting device according to (1), wherein the layered structure of the one or more light-emitting elements includes, in order from the substrate side, a first conductivity-type layer, an active layer, and a second conductivity-type layer. (3) The light-emitting device according to (2), wherein the first conductivity type layer is formed of an n-type GaN-based semiconductor material, and the second conductivity type layer is formed of a p-type GaN-based semiconductor material. (4) The light-emitting device according to (3), further comprising a plurality of transparent electrode layers and one common electrode, wherein the one or more light-emitting elements are a plurality of light-emitting elements, each of the plurality of transparent electrode layers is provided so as to cover the second conductivity type layer of each of the plurality of light-emitting elements, and the common electrode is provided so as to cover the plurality of transparent electrode layers. (5) The light-emitting device according to (4), further comprising a first metal film, wherein the first metal film is provided on the opposite side of the substrate from the compound semiconductor layer, and is in contact with a surface of the common electrode opposite to a surface facing the compound semiconductor layer. (6) The light-emitting device according to any one of (1) to (5), wherein the substrate is electrically connected to the one or more light-emitting elements and has a drive circuit for driving the one or more light-emitting elements. (7) The light-emitting device according to (6), wherein the compound semiconductor layer is connected to a circuit different from the drive circuit.(8) The light emitting device according to any one of (1) to (7), wherein the distance between the one or more light emitting elements and the compound semiconductor layer is 10 nm or more and 500 nm or less. (9) The light emitting device according to any one of (2) to (8), further comprising a wavelength conversion layer provided on the opposite side of the one or more light emitting elements from the substrate, and converting light emitted from the active layer into light in a predetermined wavelength range. (10) The light emitting device according to (9), wherein the wavelength conversion layer contains a color conversion material. (11) The light emitting device according to any one of (2) to (10), further comprising a lens provided on the opposite side of the one or more light emitting elements from the substrate, and concentrating or diverging light emitted from the active layer. (12) The light emitting device according to any one of (1) to (11), further comprising a second metal film provided between the one or more light emitting elements and the compound semiconductor layer. (13) The light emitting device according to (12), wherein the distance between the one or more light emitting elements and the compound semiconductor layer is 200 nm or more and 500 nm or less. (14) The light emitting device according to (12) or (13), wherein the second metal film is T-shaped. (15) The light emitting device according to any one of (12) to (14), wherein the second metal film includes a tapered portion. (16) The light emitting device according to any one of (1) to (15), wherein the one or more light emitting elements have a mesa structure. (17) The light emitting device according to (16), wherein the compound semiconductor layer has side surfaces inclined at an angle of 90° or less with respect to the upper surface of the substrate. (18) A light emitting device comprising: a substrate; one or more light emitting elements provided on the substrate; one or more lenses provided on the opposite side of the substrate from a corresponding one of the one or more light emitting elements; and one or more reflectors provided on the opposite side of the substrate from the one or more light emitting elements and at least a part of the periphery of a corresponding one of the one or more lenses so as to face the corresponding one lens, wherein each of the one or more reflectors includes, in order from a position farthest from the lens as viewed from the lens, a metal, a first dielectric film having a first refractive index for a reference wavelength, and a second dielectric film having a second refractive index for the reference wavelength that is higher than the first refractive index.(19) The light emitting device according to (18), wherein the one or more light emitting elements include a first light emitting element that emits light in a first wavelength range and a second light emitting element that emits light in a second wavelength range, the one or more lenses include a first lens provided corresponding to the first light emitting element and a second lens provided corresponding to the second light emitting element, the one or more reflecting members include a first reflector provided corresponding to the first light emitting element and the first lens, and a second reflector provided corresponding to the second light emitting element and the second lens, and at least one of the thickness of the first dielectric film on the first reflector and the thickness of the first dielectric film on the second reflector, the material of the first dielectric film on the first reflector and the material of the first dielectric film on the second reflector, the thickness of the second dielectric film on the first reflector and the thickness of the second dielectric film on the second reflector, and the material of the second dielectric film on the first reflector and the material of the second dielectric film on the second reflector are different from each other. (20) The light-emitting device according to (19) above, wherein the reflectance of the first reflector for light in the first wavelength range is higher than the reflectance of the first reflector for light in the second wavelength range. (21) The light-emitting device according to (19) or (20) above, wherein each of the one or more light-emitting elements includes a light-emitting surface, and each of the one or more reflectors includes a reflective surface inclined at an angle greater than 45° and less than 90° with respect to the light-emitting surface. (22) The light-emitting device according to any one of (19) to (21) above, wherein the one or more lenses and the one or more reflective members are provided on the same layer. (23) The light-emitting device according to any one of (19) to (22) above, wherein the metal includes at least one of Ag (silver), Au (gold), Al (aluminum), Cu (copper), platinum (Pt), rhodium (Rh), Ti (titanium), Ta (tantalum), and W (tungsten). (24) Each of the first dielectric layer and the second dielectric layer is SiO. ２ , SiN, Al ２ O ３ , TiO ２ , Nb ２ O ５, and Ta ２ O ５ (25) A light-emitting device according to any one of (19) to (23), comprising at least one of the following: (1) A light-emitting device according to any one of (19) to (23), comprising at least one of the following: (1) A substrate; one or more light-emitting elements provided on the substrate and each having the same layered structure; a compound semiconductor layer provided on the substrate in at least a part of the periphery of the one or more light-emitting elements, the compound semiconductor layer being electrically isolated from the one or more light-emitting elements and having the layered structure; and a reflective film covering a side surface of at least one of the one or more light-emitting elements that faces the light-emitting element, the reflective film including, in this order from a position closest to the side surface, a metal layer, a first dielectric film having a first refractive index at a reference wavelength, and a second dielectric film having a second refractive index at the reference wavelength that is higher than the first refractive index. (26) The light-emitting device according to (25), wherein each of the one or more light-emitting elements includes a light-emitting surface, and each of the one or more reflective films includes a reflective surface that is inclined at an angle greater than 45° and less than 90° with respect to the light-emitting surface. (27) The light-emitting device according to (25) or (26), wherein the metal layer contains at least one of Ag (silver), Au (gold), Al (aluminum), Cu (copper), platinum (Pt), rhodium (Rh), Ti (titanium), Ta (tantalum), and W (tungsten). (28) Each of the first dielectric film and the second dielectric film is made of SiO ２ , SiN, Al ２ O ３ , TiO ２ , Nb ２ O ５ , and Ta ２ O ５(29) An image display device comprising: a substrate, a plurality of light-emitting elements provided on the substrate, and one or more compound semiconductor layers provided on the substrate around at least a portion of each of the plurality of light-emitting elements, the compound semiconductor layers being electrically isolated from each of the plurality of light-emitting elements and having the same layered structure as the plurality of light-emitting elements, wherein upper surfaces of the plurality of light-emitting elements on the opposite side to the substrate and upper surfaces of the compound semiconductor layers on the opposite side to the substrate are at the same height position with respect to the upper surface of the substrate.

[0152] This application claims priority based on Japanese Patent Application No. 2024-051028, filed on March 27, 2024, in the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0153] Those skilled in the art will recognize that various modifications, combinations, subcombinations, and variations may occur depending on design requirements and other factors, and are intended to be within the scope of the appended claims and their equivalents.

Claims

1. A light emitting device comprising: a substrate; one or more light emitting elements provided on said substrate, each having the same layered structure; and a compound semiconductor layer provided on said substrate at least partially around said one or more light emitting elements, electrically isolated from said one or more light emitting elements, and having said layered structure, wherein an upper surface of said one or more light emitting elements on the side opposite to said substrate and an upper surface of said compound semiconductor layer on the side opposite to said substrate are at the same height relative to the upper surface of said substrate.

2. The light emitting device according to claim 1, wherein the laminated structure of the one or more light emitting elements includes, in order from the substrate side, a first conductive type layer, an active layer, and a second conductive type layer.

3. The light-emitting device according to claim 2, wherein the first conductivity type layer is formed from an n-type GaN-based semiconductor material, and the second conductivity type layer is formed from a p-type GaN-based semiconductor material.

4. The light-emitting device according to claim 3, further comprising a plurality of transparent electrode layers and one common electrode, wherein the one or more light-emitting elements are a plurality of light-emitting elements, each of the plurality of transparent electrode layers being provided so as to cover the second conductivity type layer of each of the plurality of light-emitting elements, and the common electrode being provided so as to cover the plurality of transparent electrode layers.

5. The light-emitting device according to claim 4, further comprising a first metal film, the first metal film being provided on the opposite side of the substrate as viewed from the compound semiconductor layer, and being in contact with a surface of the common electrode opposite to the surface facing the compound semiconductor layer.

6. The light emitting device according to claim 1, wherein the substrate is electrically connected to the one or more light emitting elements and has a drive circuit for driving the one or more light emitting elements.

7. The light emitting device according to claim 6, wherein the compound semiconductor layer is connected to a circuit different from the drive circuit.

8. The light emitting device according to claim 1, wherein the distance between the one or more light emitting elements and the compound semiconductor layer is 10 nm or more and 500 nm or less.

9. The light emitting device according to claim 2, further comprising a wavelength conversion layer, which is provided on the opposite side of the substrate from the one or more light emitting elements, and converts light emitted from the active layer into light within a predetermined wavelength range.

10. The light emitting device according to claim 9, wherein the wavelength conversion layer contains a color conversion material.

11. The light emitting device according to claim 2, further comprising a lens provided on the opposite side of the substrate from the one or more light emitting elements, for converging or diverging light emitted from the active layer.

12. The light emitting device according to claim 1, further comprising a second metal film provided between the one or more light emitting elements and the compound semiconductor layer.

13. The light emitting device according to claim 12, wherein the distance between the one or more light emitting elements and the compound semiconductor layer is 200 nm or more and 500 nm or less.

14. The light emitting device according to claim 12, wherein the second metal film has a T-shaped cross section.

15. The light emitting device according to claim 12, wherein the second metal film includes a tapered portion.

16. The light emitting device according to claim 1, wherein the one or more light emitting elements have a mesa structure.

17. The light-emitting device according to claim 16, wherein the compound semiconductor layer has a side surface that is inclined at an angle of 90° or less with respect to the upper surface of the substrate.

18. A light emitting device comprising: a substrate; one or more light emitting elements provided on the substrate; one or more lenses each provided on the opposite side of the substrate from a corresponding one of the one or more light emitting elements; and one or more reflectors each provided on the opposite side of the substrate from the one or more light emitting elements and at least a portion of the periphery of a corresponding one of the one or more lenses so as to face the corresponding one lens, wherein each of the one or more reflectors includes, in order from the furthest position as viewed from the lens, a metal, a first dielectric film having a first refractive index for a reference wavelength, and a second dielectric film having a second refractive index for the reference wavelength that is higher than the first refractive index.

19. The light emitting device according to claim 18, wherein the one or more light emitting elements include a first light emitting element that emits light in a first wavelength range and a second light emitting element that emits light in a second wavelength range, the one or more lenses include a first lens provided corresponding to the first light emitting element and a second lens provided corresponding to the second light emitting element, the one or more reflective members include a first reflector provided corresponding to the first light emitting element and the first lens, and a second reflector provided corresponding to the second light emitting element and the second lens, and at least one of the thickness of the first dielectric film on the first reflector and the thickness of the first dielectric film on the second reflector, the material of the first dielectric film on the first reflector and the material of the first dielectric film on the second reflector, the thickness of the second dielectric film on the first reflector and the thickness of the second dielectric film on the second reflector, and the material of the second dielectric film on the first reflector and the material of the second dielectric film on the second reflector are different from each other.

20. The light emitting device according to claim 19, wherein the reflectance of the first reflector to light in the first wavelength range is higher than the reflectance of the first reflector to light in the second wavelength range.

21. The light emitting device according to claim 19, wherein each of the one or more light emitting elements includes a light emitting surface, and each of the one or more reflectors includes a reflecting surface that is inclined at an angle greater than 45° and less than 90° with respect to the light emitting surface.

22. The light emitting device according to claim 19, wherein the one or more lenses and the one or more reflecting members are provided on the same layer.

23. The light-emitting device according to claim 19, wherein the metal includes at least one of Ag (silver), Au (gold), Al (aluminum), Cu (copper), platinum (Pt), rhodium (Rh), Ti (titanium), Ta (tantalum), and W (tungsten).

24. Each of the first dielectric layer and the second dielectric layer is made of SiO ２ , SiN, Al ２ O ３ , TiO ２ , Nb ２ O ５ , and Ta ２ O ５ The light emitting device according to claim 19, comprising at least one of:

25. A light emitting device comprising: a substrate; one or more light emitting elements provided on the substrate, each having the same layered structure; a compound semiconductor layer provided on the substrate around at least a portion of the one or more light emitting elements, electrically isolated from the one or more light emitting elements, and having the layered structure; and a reflective film covering a side surface of at least one of the one or more light emitting elements that faces the light emitting element, the reflective film including, in order from a position closest to the side surface, a metal layer, a first dielectric film having a first refractive index for a reference wavelength, and a second dielectric film having a second refractive index for the reference wavelength that is higher than the first refractive index.

26. The light emitting device according to claim 25, wherein each of the one or more light emitting elements includes a light emitting surface, and each of the one or more reflective films includes a reflective surface that is inclined at an angle greater than 45° and less than 90° with respect to the light emitting surface.

27. The light-emitting device according to claim 25, wherein the metal layer contains at least one of Ag (silver), Au (gold), Al (aluminum), Cu (copper), platinum (Pt), rhodium (Rh), Ti (titanium), Ta (tantalum), and W (tungsten).

28. The first dielectric film and the second dielectric film are each made of SiO ２ , SiN, Al ２ O ３ , TiO ２ , Nb ２ O ５ , and Ta ２ O ５ The light emitting device according to claim 25, comprising at least one of:

29. An image display device comprising a light-emitting device comprising: a substrate; a plurality of light-emitting elements provided on the substrate; and one or more compound semiconductor layers provided on the substrate around at least a portion of each of the plurality of light-emitting elements, electrically isolated from each of the plurality of light-emitting elements, and having the same layered structure as the plurality of light-emitting elements, wherein upper surfaces of the plurality of light-emitting elements opposite to the substrate and upper surfaces of the compound semiconductor layers opposite to the substrate are at the same height position relative to the upper surface of the substrate.

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