Plasma treatment device, pre-mounting treatment device, mounting system, and pre-mounting treatment method

Abstract

Provided are a plasma treatment device, a pre-bonding treatment device, a mounting system, and a pre-bonding treatment method making it possible to suppress decrease in bonding strength at a bonding surface between an electronic component and a mounting substrate. A plasma treatment device 101 of one embodiment comprises: a stage 20 on which a sheet T having a pressure-sensitive adhesive section on the surface is supported on a ring R, and which supports a component supply body TW obtained by an electronic component E being adhered to the sheet T; a chamber 10 in which the stage 20 is provided and which allows for depressurization of the interior; an exhaust port 60 for exhausting the inside of the chamber 10; a gas introduction port 30 for introducing a reaction gas into the depressurized chamber 10; a plasma generator 40 for converting the reaction gas into plasma; and a control device 200 configured to cause the plasma generator 40 to convert reaction gas to plasma, expose the component supply body TW to the plasma, after having determined that a volatilization time for volatilizing a volatile component from the component supply body TW is ensured, perform surface treatment by plasma, and after having determined that a surface treatment time for the electronic component E is ensured, terminate the surface treatment.

Description

Plasma processing apparatus, pre-mounting processing apparatus, mounting system, and pre-mounting processing method

[0001] The present invention relates to a plasma processing apparatus, a pre-mounting processing apparatus, a mounting system, and a pre-mounting processing method.

[0002] Direct bonding is a method for mounting semiconductor chips, which are electronic components, to a mounting substrate. Direct bonding is a mounting method in which the connection terminals of the mounting substrate and semiconductor chip are directly bonded to each other without using bonding materials such as solder bumps. For example, the surfaces of the mounting substrate and the semiconductor chip (protective films such as SiO2 films) are terminated with hydroxyl groups. By bringing these surfaces into contact and applying pressure and heat, the mounting substrate and the semiconductor chip are bonded to each other through hydrogen bonds between the hydroxyl groups, which eventually change to covalent bonds via oxygen atoms. This results in a diffusion bond between the connection terminals of the mounting substrate and the semiconductor chip, forming a nearly integrated structure.

[0003] "Bonding" includes "temporary bonding" and "permanent bonding." Temporary bonding is the direct mounting (bonding) of an electronic component to a mounting substrate, while permanent bonding is the covalent bonding of the bonding surfaces of the temporarily bonded electronic component and mounting substrate by annealing. In the following explanation, "temporary bonding" will be referred to as "mounting."

[0004] Semiconductor chips are electronic components formed by dicing a wafer into small pieces, and are adhered to an adhesive sheet attached to a ring. The component consisting of the sheet to which the diced wafer is adhered and the ring is called a component supply body. Furthermore, the wafer on which the electronic components are mounted after being removed from the component supply body is called a mounting substrate.

[0005] When electronic components from a component supplier are directly bonded to a mounting substrate, the diced wafers and mounting substrates are pre-treated and cleaned beforehand. This pre-treatment involves surface treatment (activation and cleaning). Activation is a process that activates the surfaces of the electronic components and mounting substrates using active species such as ions and radicals generated by plasma-forming reactive gases. Activation refers to the severing of chemical bonds between molecules on the surfaces, etching oxide films formed on the surfaces of the electronic components and mounting substrates, and terminating the surfaces of the electronic components and mounting substrates with hydroxyl groups. Cleaning is a process that cleans the surfaces of the electronic components and mounting substrates using the active species such as ions and radicals generated. Cleaning refers to the removal of particles adhering to the surfaces by flicking them off or the decomposition and removal of organic matter.

[0006] In the following description, this activation process and cleaning process using plasma will be referred to as surface treatment, and the device that performs this surface treatment will be referred to as a plasma treatment device. Generally, plasma treatment devices can also perform processes other than surface treatment, and any process performed by a plasma treatment device that includes surface treatment will be broadly referred to as plasma treatment. This plasma treatment also includes reducing the pressure to generate plasma and increasing the pressure to release that pressure reduction. Pretreatment is sometimes referred to as pre-mounting treatment. Cleaning is a process in which particles and the like present on the surfaces of electronic components and mounting boards are cleaned with a liquid such as water, and the device that performs this cleaning process will be referred to as a cleaning device.

[0007] Japanese Patent Application Laid-Open No. 2020-021966

[0008] However, in such direct bonding, there are cases where the bonding strength at the bonding surface between the electronic component and the mounting substrate is reduced, which may lead to poor quality of the product manufactured by bonding (mounting) the electronic component to the mounting substrate.

[0009] An object of the embodiments of the present invention is to provide a plasma processing apparatus, a pre-mounting processing apparatus, a mounting system, and a pre-mounting processing method that can suppress a decrease in the bonding strength at the bonding surface between an electronic component and a mounting substrate.

[0010] The plasma processing apparatus of the embodiment is a plasma processing apparatus that performs surface treatment using plasma on the bonding surface of an electronic component and a mounting substrate before mounting the electronic component on the mounting substrate, and includes: a stage that supports a component supply body on which a sheet having an adhesive portion on its surface is supported by a ring and on which the electronic component is adhered to the sheet; a chamber in which the stage is provided and the interior can be depressurized; an exhaust port for evacuating the chamber; a gas inlet port for introducing a reactive gas into the depressurized chamber; a plasma generator that converts the reactive gas into plasma; and a control device that converts the reactive gas into plasma using the plasma generator, exposes the component supply body to plasma, and after determining that a volatilization time for volatilizing volatile components from the component supply body has been secured, subsequently performs surface treatment using plasma, and after determining that a surface treatment time for the electronic component has been secured, terminates the plasma treatment.

[0011] The pre-mounting processing device of the embodiment includes the plasma processing device, a load port for loading and unloading the component supply body and the mounting substrate, a supply body cleaning device for cleaning the component supply body, a mounting substrate cleaning device for cleaning the mounting substrate, and a transport device for transporting the component supply body.

[0012] The mounting system of the embodiment includes the pre-mounting treatment device, and a bonding device that removes the electronic components treated by the pre-mounting treatment device from the component supply body and mounts the electronic components on a mounting board.

[0013] The pre-mounting treatment method of the embodiment is a method for performing pre-mounting treatment of the bonding surface between an electronic component and a mounting substrate before mounting the electronic component on the mounting substrate, and includes the following steps: a carrying-in process in which a component supply body having a sheet with an adhesive portion on its surface supported by a ring and with the electronic component adhered to the sheet is carried into a chamber; a reactive gas introduction process in which the reactive gas is introduced from the gas inlet; a plasma heating process in which the introduced reactive gas is converted into plasma and the component supply body is exposed to the plasma; a determination process in which a volatilization time has been secured in the plasma heating process to volatilize volatile components from the component supply body; and a termination process in which a surface treatment using plasma is performed following the determination process, and the plasma treatment is terminated after it has been determined that the surface treatment time for the electronic component has been secured.

[0014] The embodiment of the present invention can suppress a decrease in the bonding strength at the bonding surface between the electronic component and the mounting board.

[0015] FIG. 1 is an explanatory diagram showing the processing of each part of a mounting system of an embodiment; FIG. 2 is a simplified perspective plan view showing the configuration of a mounting system of an embodiment; FIG. 3 is a cross-sectional view showing a plasma processing apparatus of an embodiment; FIG. 4 is a simplified configuration diagram showing a supply body cleaning device and a mounted substrate cleaning device of the mounting system; FIG. 5 is a graph showing changes in pressure inside a chamber in a plasma processing apparatus, where (A) shows a case where a component supply body is plasma-treated, and (B) shows a case where an empty chamber is used and a case where a component supply body is plasma-heat-treated; FIG. 6 is a flowchart showing an operation procedure of an embodiment; FIG. 7 is a cross-sectional view of a plasma processing apparatus having an emission intensity detector; FIG. 8 is a cross-sectional view of a plasma processing apparatus having a component detector; FIG. 9 is a cross-sectional view showing a stage of a plasma processing apparatus having a heating unit; FIG. 10 is a cross-sectional view showing a plasma processing apparatus of a modified example; FIG. 11 is a simplified perspective plan view showing a mounting system in which a mounting unit has a plurality of bonding devices.

[0016] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the drawings are schematic diagrams, and the size, proportions, etc. of each part are exaggerated for ease of understanding.

[0017] 1 and 2 , a mounting system 100 according to this embodiment is an example of a system for mounting electronic components E supplied by a component supplier TW onto a mounting board BW. The mounting system 100 is composed of a pre-mounting processing unit X and a mounting unit Y. A pre-mounting processing device 300 serving as the pre-mounting processing unit X performs surface treatment (activation treatment, cleaning treatment) on the component supplier TW and the mounting board BW before mounting, and a bonding device 180 serving as the mounting unit Y mounts an electronic component E (semiconductor chip) picked up from the component supplier TW that has undergone pre-mounting treatment onto the mounting board BW that has also undergone pre-mounting treatment.

[0018] As shown in FIG. 1 , the component supply TW is a sheet T having an adhesive portion on its surface supported by a ring R, with electronic components E adhered to the sheet T. In the component supply TW of this embodiment, a wafer (semiconductor wafer) W is adhered to the center of the ring R of the sheet T. The wafer W is then diced into electronic components E. The electronic components E are, for example, semiconductor chips. The sheet T is a thin, stretchable member made of resin, and its surface is provided with adhesive portions having adhesive properties including a UV-curable resin whose adhesive strength can be reduced by irradiation with UV light. The mounting substrate BW is a wafer (semiconductor wafer, substrate) W on which electronic components E detached from the component supply TW are mounted (bonded).

[0019] The pre-mounting processing device 300 performs pre-mounting processing of the bonding surfaces of the electronic components E and the mounting substrate BW before mounting the electronic components E on the mounting substrate BW. As shown in Fig. 2, the pre-mounting processing device 300 of this embodiment can perform pre-mounting processing (surface processing) one by one on component supply bodies TW and mounting substrates BW that are stored in multiple pieces in a transport container F such as a FOUP (Front Opening Unified Pod) or a FOSB (Front Opening Shipping Box) and supplied from a previous process device, etc. The pre-mounting processing device 300 can also include a cleaning device that performs cleaning processing on the electronic components E and the mounting substrate BW.

[0020] The mounting system 100 is configured by arranging a plurality of chambers 11b, each housing an apparatus for performing various processes, around a base 11a of a box-shaped container that serves as a transfer chamber, according to the process. That is, the pre-mounting processing apparatus 300 that serves as the pre-mounting processing section X and the bonding apparatus 180 that serves as the mounting section Y are configured by the chambers 11b that perform various processes.

[0021] An FFU (Fan Filter Unit) (not shown) is provided on the ceiling of the base 11a, and is configured to generate a downflow of clean air to maintain a clean atmosphere inside the base 11a. Such an FFU may also be provided in the chamber 11b as needed. A transfer device 190 is provided inside the base 11a.

[0022] The base 11a is also provided with a load port 11c on which a transfer container F is mounted. The transfer container F containing unprocessed component supplies TW and mounting boards BW is mounted on the load port 11c. The component supplies TW and mounting boards BW are removed one by one from the transfer container F by a transfer device 190. The component supplies TW or mounting boards BW removed by the transfer device 190 are carried into each chamber 11b, processed, and removed.

[0023] The mounting system 100 of this embodiment may have a buffer device that temporarily stores the component supplier TW and the mounting board BW. This buffer device may be included in the pre-mounting processing unit X, or may be included in the mounting unit Y.

[0024] More specifically, the mounting system 100 of this embodiment is a system including a plasma processing apparatus 101, a supply cleaning apparatus 110, a mounting substrate cleaning apparatus 120, an adjustment processing apparatus 130, a gauging apparatus 140, an alignment apparatus 150, a supply buffer apparatus 160, a mounting substrate buffer apparatus 170, a bonding apparatus 180, a transport apparatus 190, and a control apparatus 200. The plasma processing apparatus 101, the supply cleaning apparatus 110, the mounting substrate cleaning apparatus 120, the adjustment processing apparatus 130, the gauging apparatus 140, the alignment apparatus 150, the supply buffer apparatus 160, the mounting substrate buffer apparatus 170, the transport apparatus 190, and the control apparatus 200 constitute a mounting pre-processing section X, and the bonding apparatus 180 and the control apparatus 200 constitute a mounting section Y.

[0025] The plasma processing apparatus 101 removes volatile components from the component supply TW. The plasma processing apparatus 101 performs surface treatment on the component supply TW and the mounting substrate BW. The supply cleaning apparatus 110 cleans the component supply TW, and the mounting substrate cleaning apparatus 120 cleans the mounting substrate BW. The adjustment processing apparatus 130 reduces the adhesive force of the sheet T on the component supply TW. The gauging apparatus 140 positions the component supply TW, and the alignment apparatus 150 positions the mounting substrate BW. The supply buffer apparatus 160 temporarily stores the component supply TW, and the mounting substrate buffer apparatus 170 temporarily stores the mounting substrate BW. The bonding apparatus 180 detaches electronic components E from the component supply TW and mounts them on the mounting substrate BW. The transport apparatus 190 transports the component supply TW and the mounting substrate BW between each unit and device. The control apparatus 200 controls each unit of the mounting system 100. The following describes each part in detail.

[0026] [Plasma Processing Apparatus] The plasma processing apparatus 101 is an apparatus (surface processing apparatus) that performs plasma surface treatment of the bonding surfaces of the electronic components E and / or the mounting substrate BW before mounting the electronic components E on the mounting substrate BW. The surface treatment is a process that activates and cleans the surfaces (bonding surfaces) of the electronic components E and the mounting substrate BW to be (mounted). The plasma processing apparatus 101 also functions as a removal apparatus that removes volatile components from the component supply body TW before the plasma surface treatment.

[0027] In this embodiment, the process of exposing the component supply TW before plasma surface treatment to plasma and removing volatile components volatilized from the component supply TW is called plasma heating treatment, and the time spent performing the plasma heating treatment is called volatilization time. Furthermore, the process of activating and cleaning the surface of the component supply TW to which the electronic components E are bonded is called surface treatment, and the time spent performing the surface treatment is called surface treatment time. Furthermore, in the treatment of the component supply TW, a process that includes both plasma heating treatment and surface treatment is called plasma treatment. Note that plasma treatment also includes reducing and increasing the pressure.

[0028] As shown in Figure 3, the plasma processing apparatus 101 of this embodiment includes a chamber 10, which is one of the chambers 11b and can reduce the pressure inside, and is equipped with a stage 20, a gas inlet 30, a plasma generator 40, a mask 50, and an exhaust port 60. The plasma processing apparatus 101 also includes a pressure detector 80 and a temperature detector 74. The chamber 10 is also equipped with a loading / unloading port LN for loading and unloading a component supplier TW and a mounting substrate BW, and the loading / unloading port LN is configured to be openable and closable by a shutter SH. The shutter SH is indicated by a dashed line in Figure 3.

[0029] (Stage) (Stage) The stage 20 supports the component supplier TW or the mounting board BW. In this embodiment, the component supplier TW or the mounting board BW is placed on the stage 20, which is loaded into the chamber 10 through the loading / unloading port LN that is opened by opening the shutter SH. The stage 20 in this embodiment is a loading area formed on the inner bottom surface of the chamber 10. In the following description, the direction from the stage 20 to the component supplier TW is referred to as upward or rising, and the direction from the component supplier TW to the stage 20 is referred to as downward or falling.

[0030] As shown in FIG. 3 , the stage 20 is provided with a driving unit 21 that raises and lowers the component supply unit TW or the mounting board BW. The driving unit 21 has rods 21a, 21b, and a driving mechanism 21c. The rods 21a and 21b are vertical bar-shaped members that airtightly penetrate the bottom of the chamber 10 and are movable up and down. A plurality of rods 21a are arranged at positions that can support the lower surfaces of the component supply units TW, and are rods on which the component supply units TW that are carried in and out of the chamber 10 are placed. A plurality of rods 21b are arranged at positions that can support the lower surfaces of the mounting boards BW, and are rods on which the mounting boards BW that are carried in and out of the chamber 10 are placed.

[0031] The drive mechanism 21c moves the rods 21a and 21b up and down, thereby raising and lowering the component supplier TW and the mounting board BW.

[0032] (Gas Inlet) The gas inlet 30 is an opening for introducing a reaction gas into the reduced pressure chamber 10. The gas inlet 30 is provided on the side of the chamber 10 so that the reaction gas can be introduced above the stage 20. A supply device 31 is connected to the gas inlet 30 via a pipe 31 a.

[0033] The supply device 31 supplies a reaction gas into the chamber 10 through the gas inlet 30. The reaction gas may be, for example, N ２ The reactive gas is used to clean the surface of the object to be treated by removing organic matter, to etch the oxide film formed on the surface of the object to be treated, and to activate the surface of the object to be treated by terminating it with hydroxyl groups. The reactive gas is also used to purge the chamber 10. Hereinafter, the space into which the reactive gas is introduced will be referred to as the gas space GA.

[0034] (Plasma Generator) The plasma generator 40 converts the reactive gas into plasma. This plasma generation generates active species such as ions and radicals. These active species are irradiated onto the joining surfaces of the component supplier TW and the mounting board BW, thereby activating and cleaning the respective surfaces. As shown in FIG. 3 , the plasma generator 40 includes an antenna 41, a power supply 42, and a matching box 43. The antenna 41 is provided outside the chamber 10 at a position corresponding to the upper part of the gas space GA. A window member 11d is provided in the chamber 10 between the antenna 41 and the gas space GA. The window member 11d is made of a dielectric material such as quartz. When a high-frequency voltage is applied to the antenna 41, the antenna 41 generates plasma P in the gas space GA through inductive coupling via the window member 11d.

[0035] The power supply 42 is connected to the antenna 41 and applies a high-frequency voltage to the antenna 41. The matching box 43 is a matching circuit connected between the power supply 42 and the antenna 41. The matching box 43 stabilizes the discharge of the plasma P by matching the impedance on the input side and the impedance on the output side.

[0036] (Mask) As shown in Fig. 3, the mask 50 is provided in the chamber 10. The mask 50 exposes the diced wafers W (electronic components E) of the component supply body TW and covers a portion of the ring R and the sheet T. The mask 50 is arranged so as to surround the periphery of the diced wafers W in the center of the ring R. More specifically, the mask 50 is a ring-shaped member that covers the exposed surface of the sheet T other than the area where the diced wafers W are adhered and the top surface of the ring R.

[0037] A plurality of support shafts 50a protrude from the bottom of the mask 50 along the inside of the outer circumferential circle of the mask 50. The support shafts 50a are inserted into holes 11e provided in the bottom of the chamber 10 so as to be able to move up and down. Stoppers 11f are provided on the upper edges of the holes 11e. The stoppers 11f are protrusions formed to restrict the descent of the mask 50 to a predetermined height position. In this embodiment, the stoppers 11f maintain the height of the mask 50 when the mounting board BW is placed on it at the same height as when the mask 50 covers the component supplier TW.

[0038] The mask 50 is provided so as to be able to move up and down by a drive unit 51. The drive unit 51 has a rod 51a and a drive mechanism 51b. The rod 51a is a vertical rod-shaped member that passes through the bottom of the chamber 10 in an airtight manner so as to be able to move up and down.

[0039] A plurality of rods 51a are arranged at positions where they can support the underside of the mask 50. In this embodiment, three rods 51a protrude through the holes 11e and contact the three support shafts 50a, respectively. In other words, the holes 11e have through-hole portions through which the rods 51a pass. Note that in FIG. 3, the support shafts 50a and rods 51a are not shown in the actual cross section to make the operation easier to understand. The drive mechanism 51b raises and lowers the mask 50 by moving the rods 51a up and down. In addition, another support shaft is urged downward by a urging member, urging the mask 50 downward.

[0040] (Exhaust Port) As shown in FIG. 3 , the exhaust port 60 is an opening for exhausting gas (e.g., reaction gas) from the chamber 10. In this embodiment, the exhaust port 60 is provided on the side of the chamber 10. A pressure reducing device 61, such as a vacuum pump, is connected to the exhaust port 60 via a pipe 61 a. The pressure reducing device 61 reduces the pressure inside the chamber 10 through the exhaust port 60. The pressure reducing device 61 also exhausts the reaction gas from the chamber 10. Furthermore, the pressure reducing device 61 exhausts volatile components that volatilize from the component supply TW within the chamber 10 before surface treatment with plasma.

[0041] (Pressure Detector) The pressure detector 80 is a pressure gauge that detects the pressure inside the chamber 10. The pressure detector 80 is connected to a detection port 11j provided in the chamber 10. The pressure detector 80 is also connected to a control device 200, which will be described later, and the control device 200 controls the plasma generator 40 in accordance with the pressure detected by the pressure detector 80. Specifically, the plasma generator 40 is controlled in accordance with the amount of change in pressure calculated from the pressure detected by the pressure detector 80 (hereinafter referred to as the calculated amount of pressure change). Note that the pressure detector 80 may also calculate the amount of change in pressure and output the calculation result to the control device 200.

[0042] (Temperature Detector) The temperature detector 74 is a thermometer that detects the temperature of the component supplier TW in the chamber 10, particularly the heating temperature of the component supplier TW during the volatilization time. The temperature detector 74 is, for example, a thermocouple. As shown in FIG. 3 , the temperature detector 74 is inserted into the chamber 10 from the side of the chamber 10 in a sealed state. The tip of the temperature detector 74 is located at a position between the stage 20 and the mask 50. For example, the tip of the temperature detector 74 is located near the ring R of the component supplier TW so as not to interfere with the support shaft 50a, the stopper 11f, the rods 21a and 21b, and the robot hand 191a.

[0043] [Supplier Cleaning Apparatus] The supplier cleaning apparatus 110 is a cleaning apparatus that cleans electronic components E before and / or after plasma processing in the plasma processing apparatus 101. The supplier cleaning apparatus 110 of this embodiment is a processing chamber that cleans the component supplier TW. The supplier cleaning apparatus 110 performs a cleaning process that cleans particles present on the component supplier TW with a liquid such as water. In this embodiment, particles remaining on the plasma-treated component supplier TW or particles generated by the plasma processing are cleaned with a cleaning liquid L. The objects to be cleaned are the surfaces of the electronic components E, the spaces between the electronic components E, and the adhesive surface of the sheet T, and particles adhering to these surfaces are cleaned and removed. As shown in Figure 4, the supplier cleaning device 110 has a cleaning chamber 111 (chamber 11b) which is a container in which the cleaning process is performed, a support part 112 which supports the component supplier TW, a rotation mechanism 113 which rotates the support part 112, a cup 114 which receives the scattering cleaning liquid L from around the component supplier TW, and a supply part 115 which supplies the cleaning liquid L.

[0044] The cleaning chamber 111 is provided with an opening 111a through which the component supply TW is carried in and out, and the opening 111a is configured to be openable and closable by a shutter 111b. The component supply TW is carried in and out of the cleaning chamber 111 by the transport device 190 through the opening 111a with the shutter 111b open. At this time, the cup 114 is retracted by a lifting mechanism (not shown). The upper surface of the support part 112 is provided with an eccentric pin that rotates and holds the outer periphery of the component supply TW. The supply part 115 is provided with a nozzle 115a that drips cleaning liquid L and a movement mechanism 115b that moves the nozzle 115a.

[0045] The cleaning process is performed by supplying cleaning liquid L from nozzle 115a to the surface to be treated of component supply body TW, which is held by an eccentric pin of support portion 112 and rotated by rotation mechanism 113. DIW, for example, is used as the cleaning liquid L. In this case, hydroxyl groups are imparted to the surfaces of electronic components E in addition to the water cleaning.

[0046] Although not shown, the rotation mechanism 113 of the supply element cleaning device 110 is equipped with an expanding device. The expanding device expands the sheet T of the component supply element TW supported by the support portion 112 to increase the spacing between the electronic components E. With this configuration, the supply element cleaning device 110 can also clean particles present in the spacing between the electronic components E.

[0047] [Mounting Substrate Cleaning Apparatus] The mounting substrate cleaning apparatus 120 is a cleaning apparatus that cleans the mounting substrate BW before and / or after the plasma treatment in the plasma treatment apparatus 101. The mounting substrate cleaning apparatus 120 of this embodiment is a processing chamber that cleans the mounting substrate BW. The mounting substrate cleaning apparatus 120 performs a cleaning process that cleans particles present on the mounting substrate BW with a liquid such as water. In this embodiment, particles remaining on the plasma-treated mounting substrate BW or particles generated by the plasma treatment are cleaned with a cleaning liquid L. Similar to the supplier cleaning apparatus 110 shown in FIG. 4 , the mounting substrate cleaning apparatus 120 includes a cleaning chamber 111 that is a container that performs the cleaning process therein, a support 112 that supports the mounting substrate BW, a rotation mechanism 113 that rotates the support 112, a cup 114 that receives the cleaning liquid L that splashes from around the mounting substrate BW, and a supply unit 115 that supplies the cleaning liquid L. When, for example, DIW is used as the cleaning liquid L, hydroxyl groups are added to the surface of the mounting substrate BW in addition to the water cleaning.

[0048] [Adjustment Processing Device] The adjustment processing device 130 adjusts the sheet T of the component supply body TW after cleaning by irradiating it with UV light, thereby reducing the adhesive strength of the sheet T. As shown in FIG. 1 , the adjustment processing device 130 has an irradiation device 131 that irradiates the entire area below the accommodated component supply body TW with UV light by scanning a UV light source.

[0049] [Gauging Device] The gauging device 140 positions the component supply body TW. The gauging device 140 is a contact-type centering device that adjusts the position by contacting the outer periphery of the component supply body TW so that the center of the component supply body TW coincides with a reference position set inside.

[0050] [Alignment Device] The alignment device 150 positions the mounting substrate BW. The alignment device 150 is a non-contact (optical) centering device that adjusts the position of the mounting substrate BW so that the center of the mounting substrate BW coincides with a reference position provided inside.

[0051] [Supplier Buffer Apparatus] The supplier buffer apparatus 160 temporarily stores component suppliers TW before they are carried into the bonding apparatus 180. As shown in FIG. 1 , the supplier buffer apparatus 160 has a storehouse 161 that can store multiple component suppliers TW stacked at intervals.

[0052] [Mounted Board Buffer Apparatus] The mounted board buffer apparatus 170 temporarily stores the mounted boards BW before they are carried into the bonding apparatus 180. The mounted board buffer apparatus 170 has a storehouse 171 that can store a plurality of mounted boards BW stacked at intervals.

[0053] [Bonding Apparatus] The bonding apparatus 180 is included in the mounting section Y and is a processing chamber that detaches electronic components E from the component supply body TW that has been processed by the plasma processing apparatus 102 and mounts them on a mounting substrate BW. The bonding apparatus 180 includes a supply mechanism, a pickup mechanism, and a mounting mechanism, all of which are not shown. The bonding apparatus 180 uses the pickup mechanism to pick up electronic components E from the component supply body TW that have been carried into the supply mechanism by the transport device 190, and transfers them to the mounting mechanism. The mounting mechanism mounts the electronic components E on the mounting substrate BW that has been carried into the bonding apparatus 180 by the transport device 190. Note that, as shown in FIG. 1 , the bonding apparatus 180 of this embodiment flips over the picked-up electronic components E and mounts the pre-mounted surface on the surface of the mounting substrate BW that has also undergone pre-mounting processing.

[0054] [Transport Device] The transport device 190 transports component supply items TW and mounting boards BW between the load port 11c and each chamber 11b, between each chamber 11b, and between the supply item buffer device 160, the mounting board buffer device 170, and the bonding device 180. In other words, transport by the transport device 190 also includes transporting component supply items TW and mounting boards BW between the pre-mounting processing unit X and the mounting unit Y. As shown in FIG. 2 , the transport device 190 has a transport robot 191 and a moving mechanism 192. The transport robot 191 is of a double-arm type, and a pair of robot hands 191a support the component supply items TW and mounting boards BW, respectively. The moving mechanism 192 moves the transport robot 191 and positions it relative to the load port 11c, each chamber 11b, and the bonding device 180. The robot hand 191 a carries in and out the component supply bodies TW and the mounting boards BW to and from each transport container F, each chamber 11 b and the bonding device 180 .

[0055] [Control Device] The control device 200 is a computer that controls each part of the mounting system 100. The control device 200 has a processor that executes programs, a memory that stores various information such as the programs and operating conditions, and a drive circuit that drives each element. In other words, the control device 200 controls the plasma processing device 101, the supply item cleaning device 110, the mounting substrate cleaning device 120, the adjustment processing device 130, the gauging device 140, the alignment device 150, the supply item buffer device 160, the mounting substrate buffer device 170, the bonding device 180, and the transport device 190. In other words, the control device 200 is also a computer that controls each part of the mounting pre-processing unit X and the mounting unit Y.

[0056] The control device 200 also starts the plasma heating process in the plasma generator 40, determines that the volatilization time for the volatile components to volatilize from the component supply TW has been secured, continues the surface treatment using plasma, and terminates the surface treatment after determining that the surface treatment time for the electronic component E has been secured. Details of the operation of the control device 200 will be described later.

[0057] [Causes of Decrease in Bonding Strength] In direct bonding, in which electronic component E is directly bonded to a substrate without using a bonding material such as a solder bump, there have been cases where the bonding strength has decreased. There are various factors that affect the bonding strength, but one of the factors that causes the decrease in bonding strength is thought to be insufficient pre-processing before mounting. In other words, it is thought that factors that inhibit bonding remain on the bonding surface between the electronic component and the mounting substrate.

[0058] Therefore, we investigated the factors in the pre-treatment. In particular, we investigated the influence of plasma treatment. As a result, we found that there was a difference in the pressure change during plasma treatment between the case where the component supply body TW was plasma treated and the case where the mounting board BW was plasma treated. In the case where the component supply body TW was plasma treated, a pressure fluctuation occurred at the end of the plasma surface treatment, which was not observed in the case where the mounting board BW was plasma treated.

[0059] 5 shows an example of the change in pressure inside the chamber 10 during plasma processing in the plasma processing apparatus 101. FIG. 5 is a graph with pressure on the vertical axis and time on the horizontal axis. Plasma surface processing is performed in a reduced pressure atmosphere. Therefore, the pressure inside the chamber 10 is first reduced, and once a predetermined pressure is reached, plasma surface processing begins. In this embodiment, this predetermined pressure is called the base pressure.

[0060] 5A shows the pressure change (progression) in the chamber 10 when a component supply body TW is plasma-treated in the plasma treatment apparatus 101. As shown in FIG. 5A, when the pressure in the chamber 10 is reduced to the base pressure, a reactive gas to be converted into plasma is introduced into the chamber 10. The introduction of the reactive gas increases the pressure in the chamber 10 to the surface treatment pressure.

[0061] Then, due to the balance between exhaust and introduction, the surface treatment pressure is maintained constant, as shown by the almost horizontal straight line in Figure 5(A). In this state, power is applied to the reactive gas to convert it into plasma. The activated species generated by converting the reactive gas into plasma perform surface treatment on the component supply body TW carried into the plasma treatment device 101. After a predetermined treatment time t0 has elapsed, the plasma surface treatment is terminated. The supply of reactive gas is stopped, and the application of power is stopped. Then, the pressure inside the chamber 10 decreases due to continued exhaust. Thereafter, exhaust is stopped, and the atmosphere is introduced, raising the pressure inside the chamber 10 to atmospheric pressure. This completes the plasma treatment.

[0062] The pressure fluctuation observed at the end of the surface treatment of the component supply body TW is shown by the circle in Figure 5(A). This fluctuation in the surface treatment pressure was not observed when the surface treatment of the mounting board BW was performed. The inventors of the present application focused on the change in amplitude due to the increase or decrease in pressure during the surface treatment.

[0063] The component supply body TW and the mounting board BW have different configurations. The component supply body TW is a sheet T attached to a ring R, with diced wafers (semiconductor wafers) W adhered to it. In contrast, the mounting board BW is a substrate consisting of only semiconductor wafers. The difference between the two is the presence or absence of the sheet T. Therefore, it was inferred that the pressure fluctuations during surface treatment of the component supply body TW were caused by the sheet T.

[0064] The adhesive portion of the sheet T holds the electronic component E and is made of a material that loses its adhesiveness when the electronic component E is peeled off during mounting. Such a material is a curable resin such as a UV-curable resin or a thermosetting resin. During mounting, the resin is cured to lose its adhesiveness just before the electronic component E is peeled off from the sheet T. Therefore, until then, the resin remains uncured in order to hold the electronic component E. Water easily dissolves in uncured resin. Furthermore, the sheet T itself is made of resin and absorbs moisture.

[0065] When a component supply TW having such components is subjected to plasma treatment, first, as the pressure is reduced, volatile components such as highly volatile adhesive portions, moisture absorbed by the sheet T, moisture dissolved in the resin, and solvent components begin to volatilize. When the plasma surface treatment begins, the heat of the plasma raises the temperature of the component supply TW. This gradually raises the temperature of the sheet T to be surface treated and the curable resin that is the adhesive portion on its surface, and further volatilizes the moisture absorbed by the sheet T, the moisture and solvent components dissolved in the resin, and the resin components themselves as gas. Therefore, it is thought that pressure fluctuations occur due to volatile gases (volatile components) after a certain amount of time has passed during the surface treatment.

[0066] Furthermore, when evaporation occurs from the sheet T or the adhesive curable resin, the temperature drops due to the heat of vaporization, which stops the evaporation. Once the evaporation stops, it begins again due to the heat of the plasma. It can be inferred that this repetition causes the observed oscillatory pressure fluctuations.

[0067] The reason for this oscillatory pressure fluctuation will be explained using the following equation. Let P be the pressure inside chamber 10, Le be the amount of minute gases flowing into chamber 10 (leakage), Vo be the amount of volatile components volatilizing from component supply TW, RG be the amount of reactant gas introduced into chamber 11b, and Ex be the exhaust volume of pressure reducing device 61 (exhaust device). The following equation (1) holds: P = Le + Vo + RG - Ex (1) When no volatile components are volatilizing from component supply TW, P = Le + RG - Ex, and the pressure becomes constant when the sum of the leak volume Le and the introduced amount of reactant gas RG balances with the exhaust volume Ex. When volatile components are present, equation (1) shows that the pressure inside chamber 10 will be higher by Vo than when only reactant gas is introduced.

[0068] The amount of Vo repeatedly increases and decreases due to the interaction of the following four phenomena: (a) As the pressure inside the chamber 10 decreases, the boiling point also decreases; (b) The boiling point differs depending on the volatile component; (c) When a volatile component evaporates, it takes heat of vaporization from the surroundings (e.g., the sheet T or adhesive portion), causing the surrounding temperature to decrease; (d) Even within the same component, some components are more likely to volatilize than others (e.g., volatile components adsorbed on the surface or adhesive portion of the sheet T are more likely to volatilize, while volatile components adsorbed inside the sheet T or adhesive portion are less likely to volatilize). Therefore, when the inflow amount Le, introduction amount RG, and exhaust amount Ex are constant, changes in Vo cause changes in P.

[0069] Specifically, due to event (a), the pressure inside chamber 10 decreases, causing the boiling point of the volatile components to decrease, and the volatile components begin to volatilize. When reactive gas is introduced for plasma surface treatment, the pressure inside chamber 10 increases, causing the boiling point of the volatile components to increase, temporarily halting the volatilization of the volatile components. The component supply TW is then heated by the heat of the plasma, and the temperature of the sheet T and the adhesive portion reaches the boiling point of the volatile components contained in the sheet T and the adhesive portion. As a result, the volatile components begin to volatilize from the component supply TW, and the pressure inside chamber 10 increases. However, due to event (c), the temperature of the sheet T and the adhesive portion decreases, causing the temperature of the volatile components to also decrease. As a result, the temperature of the volatile components decreases below the boiling point due to the reduced pressure, volatilization stops, and the pressure inside chamber 10 returns to its original pressure.

[0070] However, as the component supply body TW continues to be exposed to the plasma, the temperature rises again, and the volatile components begin to volatilize again. This repetition causes the amount of Vo to repeatedly increase and decrease. Furthermore, as events (b) and (d) are also related, different volatile components repeatedly start and stop volatilizing within a certain pressure range. As a result, the amount of Vo increases and decreases in an even more complex manner. This is expressed as the amount of pressure change per unit time (ΔP / Δt). The greater the amount of volatilizing components, the greater the amount of pressure change.

[0071] As the volatilization of the volatile components progresses, the amount of volatilization (Vo) decreases or disappears, so that P≈Le+RG−Ex. Therefore, the oscillatory pressure change converges.

[0072] Volatile components volatilizing from the resin sheet T and adhesive portion of the component supply TW generally contain carbon. Substances with small molecular weights are more likely to volatilize. It is believed that when volatile components containing low molecular weight carbon volatilize from the component supply TW during plasma surface treatment, they are absorbed into the plasma atmosphere and ionized. The ionized volatile components collide with and react with portions of the surfaces of the electronic components E. It is believed that compounds or carbon-containing functional groups are formed on portions of the surfaces of the electronic components E that react with the ionized volatile components, rendering those portions inactive. These compounds or carbon-containing functional groups cannot be removed even by cleaning with the supply cleaning device 110. As a result, it is believed that a decrease in the bonding strength occurs at the bonding surface between the component supply TW and the mounting board BW.

[0073] In other words, there are various possible causes for the decrease in bonding strength, but one possible cause is insufficient plasma surface treatment of the component supply body TW, which is thought to be caused by volatiles evaporating from the sheet T and the adhesive portion.

[0074] Such a situation that causes a decrease in bonding strength can be said to be a defect in the pre-mounting process or a defect in the mounting process.

[0075] 5B shows the transition of pressure when the empty chamber 10 is evacuated and depressurized in the same manner as in plasma processing, using a dashed-dotted line. Although not shown for ease of viewing, the transition of pressure when the mounting substrate BW is housed in the chamber 10 and depressurized in the same manner was the same as when the chamber 10 was empty. That is, the transition was the same as that shown by the dashed-dotted line. In other words, it was confirmed that no volatilization occurred from the mounting substrate BW, which did not exhibit oscillatory pressure fluctuations during surface processing.

[0076] [Regarding Elimination of Bonding Interference Factors] From the above observations and inferences, it can be seen that one of the bonding interference factors can be eliminated by removing volatile components from the component supply TW in advance before performing surface treatment. Therefore, in the mounting system 100 of this embodiment, the plasma processing device 101 of the pre-mounting processing device 300 is configured to ensure a volatilization time for removing volatile components from the component supply TW before starting surface treatment. In the plasma processing device 101 of this embodiment, the component supply TW is heated by plasma heating treatment in the depressurized chamber 10 to promote volatilization of volatile components from the component supply TW.

[0077] That is, to prevent volatilization of unnecessary components during plasma surface treatment, the amount of volatile components generated from the component supply TW is reduced in advance to a level that does not affect the bond strength before surface treatment. In other words, it is not necessary to remove all of the volatile components. This is referred to as a removal process. Here, "not affecting the bond strength" means that the bond strength at the bonded surface between the component supply TW and the mounting substrate BW does not decrease below the required predetermined strength. The predetermined strength refers to the bond strength obtained when, after the temporary bonding in the mounting process, annealing is performed, and the bonded surfaces between the component supply TW and the mounting substrate BW are finally converted to covalent bonds via oxygen atoms, resulting in a nearly integrated bond. The relationship between the bond strength and the amount of volatilization can be confirmed and determined in advance through experiments, etc. The amount of volatilization can be monitored by the pressure within the chamber 10, as described below.

[0078] 5B shows an example of pressure changes during decompression in the chamber 10 in the plasma processing apparatus 101 of this embodiment. The dashed-dotted line in the graph of FIG. 5B shows the pressure changes during decompression in an empty chamber 10, as described above. Therefore, it shows the pressure changes when there is no component supply TW in the chamber 10 and no volatile components. In this case, no surface treatment using plasma is performed. The solid line in the graph of FIG. 5B shows the pressure changes during plasma treatment of the component supply TW in this embodiment.

[0079] The transition of the pressure inside the chamber 10 during plasma processing in the plasma processing apparatus 101 of this embodiment will be described with reference to the solid line in the graph of FIG. 5B.

[0080] If there is a component supply TW in the chamber 10, i.e., if volatile components are present, the pressure will rise due to this volatilization, and the volatilization pressure will be added to the reduced pressure, resulting in a higher pressure. When the pressure inside the chamber 10 is reduced to about 4000 Pa, the pressure decrease becomes more gradual compared to when the chamber is empty (dotted line), and slight increases and decreases in pressure occur. This is thought to be mainly due to the fact that moisture adsorbed to the sheet T and adhesive portions begins to volatilize. Therefore, the pressure inside the chamber 10 decreases as the moisture volatilizes. Of course, it is not limited to moisture that volatilizes; volatile components such as solvents in the resin components may also be included.

[0081] To ensure the volatilization time required to remove the volatile components, the pressure in the chamber 10 is increased to a predetermined pressure by introducing a reactive gas after the base pressure is reached. This pressure becomes the plasma heating treatment pressure. The plasma heating treatment pressure is the pressure at which the plasma heating treatment is performed and at which the volatile components are volatilized. In this embodiment, the plasma heating treatment pressure is set lower than the surface treatment pressure. That is, while the pressure in the chamber 10 is maintained constant at a plasma heating treatment pressure lower than the surface treatment pressure, the introduced reactive gas is converted into plasma, and the component supply body TW is heated under reduced pressure by the heat of the plasma. Note that the plasma heating treatment pressure is set lower than the surface treatment pressure in consideration of the above-mentioned phenomenon (a). However, the plasma heating treatment pressure and the surface treatment pressure may be the same or higher.

[0082] After a certain amount of time has elapsed since the start of the plasma heating process, there is a time range during which the amplitude of the increase and decrease in pressure within the chamber 10 becomes drastic (the amount of pressure change becomes large). At this time, the amount of reactant gas introduced (RG) and exhausted (Ex) are constant, so pressure fluctuations occur based on the amount of volatilization (Vo). After that, the amount of pressure change within the chamber 10 decreases. As described above, the point at which the amount of pressure change becomes small is the point at which there is no volatilization or the amount of volatile components volatilized from the component supplier TW has decreased. In other words, at this point, the volatile components have been removed from the component supplier TW.

[0083] Such pressure fluctuations are measured by the pressure detector 80, and the control device 200 calculates the amount of pressure change. The control device 200 then determines that the volatilization time required to remove the volatile components has been secured when the calculated amount of pressure change falls within a predetermined range. This predetermined range of pressure change can be set to an amount of volatile components volatilized from the component supply TW that will not cause problems in the pre-mounting process (surface treatment). In other words, it is not necessary to remove all of the volatile components; it can be set to an amount that does not affect the bonding strength. The point at which this pressure change decreases to within the predetermined range is called the endpoint.

[0084] If the removal process is insufficient, unnecessary components will volatilize during the plasma surface treatment, affecting the bond strength, while excessive removal will result in reduced productivity. Therefore, it is necessary to properly control the end point (endpoint) of the removal process. In other words, the end point of the removal process is the point at which the amount of volatilized components from the component supply TW has decreased to a level that does not affect the bond strength.

[0085] Therefore, the pressure change amount at which the amount of volatile components volatilized from the component supply TW has decreased to an amount that does not cause problems during surface treatment is set as the endpoint threshold. This threshold pressure change amount is set as the set pressure change amount. The point in time (endpoint) at which the pressure change amount calculated from the measured pressure value in the chamber 10 becomes equal to or less than the set pressure change amount is indicated by the solid white circle in Figure 5(B).

[0086] In other words, determining that the end point has been reached means determining that the volatilization time has been secured. This also marks the end point of the plasma heating process. The time during which this plasma heating process is performed is designated as t1. The method for determining that the volatilization time has been secured is to compare the calculated pressure change amount with the set pressure change amount and check whether the calculated pressure change amount is equal to or less than the set pressure change amount. When comparing the calculated pressure change amount with the set pressure change amount, each value is converted to an absolute value before comparison.

[0087] After the end point of the plasma treatment of the component supply body TW is reached, the process shifts from the plasma heating process to the surface treatment. Therefore, the pressure in the chamber 10 is increased by introducing more reactive gas into the chamber 10b through the gas inlet 30. As a result, the pressure in the chamber 10 becomes the surface treatment pressure.

[0088] That is, when the control device 200 determines that the volatilization time has been secured, it adjusts the amount of reactive gas introduced from the gas inlet 30. More specifically, when the control device 200 determines that the volatilization time has been secured, it increases the amount of reactive gas supplied into the chamber 10 to set the surface treatment pressure higher than the plasma heating treatment pressure. Here, if the plasma heating treatment pressure is the same as the surface treatment pressure, the amount of reactive gas introduced remains the same. If the plasma heating treatment pressure is higher than the surface treatment pressure, the amount of reactive gas introduced is reduced until the surface treatment pressure is reached. Surface treatment is performed while the pressure inside the chamber 10 is maintained constant at the surface treatment pressure. In this case, because the volatile components of the component supply body TW have been removed in advance, the volatile components do not volatilize during surface treatment. Therefore, no change in amplitude occurs due to an increase or decrease in pressure during surface treatment.

[0089] When the control device 200 of this embodiment determines that the volatilization time has been secured, it increases the power applied to the plasma generator 40. In other words, during the plasma heating treatment, the power applied to the antenna 41 by the power supply 42 is made weaker than that for the surface treatment, and after the plasma heating treatment, the applied power is set to the power required for the surface treatment.

[0090] In other words, the energy of active species such as ions and radicals generated during plasma heating treatment serves as heating that promotes the volatilization of volatile components from the component supply body TW, thereby minimizing the etching effect. As a result, the influence of plasma heating treatment on the electronic components E can be suppressed. Note that the applied power may be the same during plasma heating treatment and surface treatment if no influence on the electronic components E is observed.

[0091] The control device 200 terminates the plasma treatment when the surface treatment has reached a predetermined treatment time t0. The surface treatment time t0 may be set to a time required to activate and clean the joining surface of the component supply body TW to a degree that a predetermined joining strength is obtained. Such a surface treatment time t0 may be determined in advance by experiment or the like.

[0092] After the surface treatment, the control device 200 controls each part of the plasma treatment device 101 to stop the power applied to the antenna 41, stop the exhaust, and stop the supply of the reactive gas. As shown by the solid line in Figure 5(B), the pressure inside the chamber 10 temporarily drops until the exhaust stops, but then rises to atmospheric pressure by opening the chamber to the atmosphere. This completes the plasma treatment.

[0093] As described above, in the plasma processing apparatus 101 containing the component supply body TW, volatile components are removed by plasma heating treatment, and then surface treatment is performed using plasma, thereby preventing reactions that would inhibit bonding during surface treatment.

[0094] 5B, there is almost no change in the pressure inside the chamber 10 for a while after the start of the plasma heating process. Therefore, when the calculated pressure change amount is compared with the set pressure change amount immediately after the start of the plasma heating process, the calculated pressure change amount may be less than the set pressure change amount, which may cause the plasma heating process to be terminated. This may result in insufficient removal of volatile components from the component supply TW.

[0095] Therefore, it is preferable to set the timing for starting calculation of the pressure change amount, i.e., detection of the endpoint, to a timing determined in advance through experiments, etc. Alternatively, a volatilization start pressure change amount, which is a pressure change amount greater than the set pressure change amount, can be set in the control device 200, and detection of this amount can be used as the timing for starting detection of the endpoint. In the solid line shown in Figure 5(B), the point in time when the pressure change amount in the chamber 10 reaches the volatilization start pressure change amount is indicated by a white triangle.

[0096] The amount of change in pressure at which volatilization starts and the amount of change in set pressure may be determined by setting pressure thresholds for each, and determining when the measured pressure value changes to or exceeds the threshold value or changes to or below the threshold value.

[0097] The control device 200 controls the drive unit 51 to switch the position of the mask 50 before and after the completion of the volatilization of the volatile components. Until it is determined that the volatilization of the volatile components from the component supplier TW is complete, the control device 200 keeps the mask 50 at the maximum distance from the sheet T, and when it is determined that the volatilization of the volatile components from the component supplier TW is complete, the control device 200 keeps the mask 50 at the minimum distance from the sheet T.

[0098] [Operation] The operation of the mounting system 100 of this embodiment as described above will be described with reference to the flowchart of Fig. 6 in addition to the aforementioned Figs. 1 to 5. A mounting method for mounting an electronic component E on a mounting board BW according to the following procedure is also one aspect of this embodiment. Note that the following description follows the flowchart of Fig. 6, but it also includes a state in which each process is performed simultaneously in parallel.

[0099] 2, a transport container F containing a component supply TW and a transport container F containing a mounting substrate BW are mounted on the load port 11c. The transport robot 191 receives the component supply TW from the transport container F on the load port 11c and transports the component supply TW to the plasma processing apparatus 101.

[0100] The plasma processing apparatus 101 removes volatile components that have evaporated from the adhesive portions of the component supply TW and from the sheet T (volatile component removal process: step S100). First, the drive unit 51 raises the rod 51a, raising the mask 50 against the biasing force of the biasing member. At this time, the mask 50 is positioned at the maximum distance from the sheet T (the state shown by the dotted line in FIG. 3). By raising the mask 50, the mask 50 is retracted so as not to obstruct the entry of the robot hand 191a of the transfer robot 191 into the chamber 10. Next, the shutter SH opens, and the robot hand 191a of the transfer robot 191 supporting the component supply TW is inserted through the loading / unloading port LN. The robot hand 191a positions the component supply TW above the rod 21a.

[0101] The driving mechanism 21c raises the rod 21a, lifting the component supplier TW from the robot hand 191a, and the robot hand 191a retracts. After the robot hand 191a retracts, the shutter SH closes. The driving mechanism 21c lowers the rod 21a, placing the component supplier TW on the stage 20. At this time, the rod 51a is not lowered, and the mask 50 remains raised.

[0102] In this state, the plasma processing apparatus 101 begins heating using the plasma generator 40. In other words, the volatile component removal process corresponds to the plasma heating process described above. When the pressure inside the chamber 10 reaches the base pressure due to exhaust by the pressure reducing device 61, the supply device 31 supplies the reactive gas to the gas space GA. The pressure inside the chamber 10 becomes the plasma heating process pressure. In this state, the power source 42 applies high-frequency power to the antenna 41, thereby generating plasma P in the gas space GA.

[0103] The component supply body TW is heated by the reaction gas being turned into plasma. By maintaining the plasma P while maintaining the plasma heating pressure, the component supply body TW is heated and volatile components are evaporated from the component supply body TW. The evaporated volatile components are exhausted from the exhaust port 60 together with the reaction gas by the pressure reducing device 61. Because the mask 50 is raised, the area of ​​the sheet T exposed to the plasma P increases, and the heating time (volatilization time) can be shortened.

[0104] The heating temperature of the component supply body TW in the plasma treatment is a temperature at which volatile components volatilize from the component supply body TW and at which the sheet T and the adhesive portion are not damaged (burned, melted, softened, etc.), which is 40 to 200°C, preferably 40 to 80°C. This temperature varies depending on the materials of the sheet T and the adhesive portion. Therefore, it is preferable to determine this temperature in advance by experiment, etc.

[0105] When the plasma heating process is started, the pressure detector 80 starts outputting the detected pressure inside the chamber 10 to the control device 200. The control device 200 starts comparing the amount of pressure change calculated from the pressure detected by the pressure detector 80 with the amount of pressure change at which volatilization starts. When the calculated amount of pressure change becomes equal to or greater than the amount of pressure change at which volatilization starts, the control device 200 starts comparing the calculated amount of pressure change with the set amount of pressure change.

[0106] In this embodiment, when the calculated pressure change amount becomes equal to or less than the set pressure change amount, the power supply 42 increases the power applied to the antenna 41 to continue the surface treatment. That is, after ensuring the volatilization time, the plasma treatment apparatus 101 continues to activate and clean the surfaces of the electronic components E by surface treatment (supply body surface treatment step: step S101). That is, the supply body surface treatment step corresponds to the above-mentioned surface treatment. This process is performed by the control device 200 causing the power supply 42 to increase the power applied to the plasma generator 40 (antenna 41) when it determines that the volatilization time has been ensured.

[0107] Before increasing the power applied to the antenna 41, the control device 200 causes the drive unit 51 to lower the rod 51a as shown in FIG. 3. When the rod 51a lowers, the mask 50 lowers due to the biasing force of the biasing member. The mask 50 comes into contact with the ring R and stops, covering the ring R and the sheet T. In other words, the mask 50 is positioned at a minimum distance from the sheet T. The control device 200 also increases the amount of reactive gas supplied from the gas inlet 30, thereby increasing the pressure inside the chamber 10. This sets the pressure inside the chamber 10 to the surface treatment pressure.

[0108] In the surface treatment, the reactive gas is converted into plasma, generating active species such as ions and radicals that activate and clean the surfaces of the electronic components E. The reactive gas is exhausted from an exhaust port 60 by a pressure reducing device 61. The active species that tend to move toward the vicinity of the outer periphery of the wafer W, i.e., the area between the ring R and the electronic components E, are prevented from contacting the ring R and the exposed surfaces of the sheet T by the mask 50 (as indicated by the arrows in the figure). This prevents the exposed surfaces of the ring R and the sheet T from being etched by the active species. When the control device 200 determines that the surface treatment time (t0) has elapsed, it terminates the surface treatment by plasma processing.

[0109] After the surface treatment of the component supply TW, the drive unit 51 raises the rod 51a. The drive unit 51 raises the mask 50 against the biasing force of the biasing member, separating the mask 50 from the ring R. The drive mechanism 21c raises the rod 21a, thereby lifting the component supply TW. The shutter SH opens, and the robot hand 191a is inserted through the loading / unloading port LN. The drive mechanism 21c lowers the rod 21a, and the component supply TW is placed on one of the robot hands 191a of the double arm and handed over. The robot hand 191a then carries the component supply TW out through the loading / unloading port LN.

[0110] While the surface treatment of the component supply body TW is being performed, the transport robot 191 receives the mounting substrate BW from the transport container F with the other robot hand 191a of the double arm. The transport robot 191 receives the component supply body TW from the rod 21a of the plasma processing device 101, and delivers the mounting substrate BW to the plasma processing device 101. The plasma processing device 101 activates and cleans the surface of the mounting substrate BW by performing surface treatment using plasma (mounting substrate surface treatment process: step S102).

[0111] The procedure for plasma treatment of the mounting substrate BW is the same as that of the above-described supply surface treatment step, except that in the case of the mounting substrate BW, the volatile component removal step, i.e., the plasma heating treatment, is not performed, and only the surface treatment is performed.

[0112] The transport robot 191 delivers the surface-treated component supply TW to the support 112 of the supply cleaning device 110. The supply cleaning device 110 rotates the surface-treated component supply TW delivered to the support 112 using the support 112 and the rotation mechanism 113 while supplying cleaning liquid L to the component supply TW. In this manner, the component supply TW is cleaned (supply cleaning process: step S103). This removes particles generated by the etching effect of the plasma surface treatment. At this time, the sheet T of the supply cleaning device 110 is expanded by the expanding device, and the electronic components E are cleaned with the spacing between them widened. After cleaning by supplying cleaning liquid L, the sheet is rotated at high speed to shake off the cleaning liquid L and dry. After drying, the rotation of the support 112 is stopped, and the expanding device releases the sheet T, causing it to contract to its original state, restoring the spacing between the electronic components E to its original state.

[0113] After the surface treatment of the mounting substrate BW in the plasma processing apparatus 101 is completed, the transfer robot 191 receives the mounting substrate BW from the plasma processing apparatus 101. The transfer robot 191 delivers the received mounting substrate BW to the mounting substrate cleaning apparatus 120. The mounting substrate cleaning apparatus 120 supplies cleaning liquid L to the mounting substrate BW while rotating the mounting substrate BW. In this manner, the mounting substrate BW is cleaned (mounting substrate cleaning process: step S104). After cleaning by supplying cleaning liquid L, the mounting substrate BW is dried by spinning at high speed to shake off the cleaning liquid L. This mounting substrate cleaning process includes a state in which it is performed simultaneously with the supply body cleaning process. In other words, the time during which the component supply body TW is cleaned and the time during which the mounting substrate BW is cleaned overlap.

[0114] After the cleaning process of the component supply TW is completed, the transport robot 191 receives the component supply TW from the supply cleaning device 110 and hands it over to the gauging device 140. The gauging device 140 aligns the component supply TW (positioning process: step S105). After the alignment is complete, the transport robot 191 receives the component supply TW from the gauging device 140 and hands it over to the adjustment processing device 130. The adjustment processing device 130 performs an adjustment process to reduce the adhesive strength of the sheet T by irradiating the component supply TW with UV light (adjustment process: step S106). These positioning and adjustment processes overlap with the mounting substrate cleaning process.

[0115] After the cleaning process of the mounting substrate BW is completed, the transfer robot 191 receives the mounting substrate BW from the mounting substrate cleaning device 120 and transfers it to the alignment device 150. The alignment device 150 aligns the mounting substrate BW (positioning step: step S107).

[0116] After the adjustment process is completed, the transport robot 191 receives the component supply TW from the adjustment processing device 130 and hands it over to the supply buffer device 160. After the alignment of the mounting board BW is completed, the transport robot 191 receives the mounting board BW from the alignment device 150 and hands it over to the mounting board buffer device 170.

[0117] In this way, the component supply items TW and the mounting boards BW are stored in the supply item buffer unit 160 and the mounting boards BW (storing process: step S108). After storing the component supply items TW and the mounting boards BW, when the bonding apparatus 180 becomes ready to accept them, the transport robot 191 receives the component supply items TW and the mounting boards BW and hands them over to the bonding apparatus 180. That is, in response to a signal from the bonding apparatus 180 indicating that processing is complete and the bonding apparatus 180 is ready to accept them, the transport robot 191 removes the component supply items TW and the mounting boards BW from the supply item buffer unit 160 and the mounting boards BW from the mounting board buffer unit 170. The transport robot 191 then carries the component supply items TW and the mounting boards BW into the bonding apparatus 180. In the bonding apparatus 180, electronic components E are picked up from the component supply items TW and mounted on the mounting boards BW (mounting process: step S109).

[0118] [Effects] (1) The plasma processing apparatus 101 of this embodiment is a plasma processing apparatus 101 that performs surface treatment using plasma on the bonding surfaces of the electronic component E and the mounting board BW before mounting the electronic component E on the mounting board BW, and includes: a stage 20 that supports a component supply body TW on which a sheet T having an adhesive portion on its surface is supported by a ring R and on which an electronic component E is adhered to the sheet T; a chamber 10 in which the stage 20 is provided and whose interior can be depressurized; an exhaust port 60 that evacuates the chamber 10; a gas inlet 30 that introduces a reactive gas into the depressurized chamber 10; a plasma generator 40 that converts the reactive gas into plasma; and a control device 200 that converts the reactive gas into plasma using the plasma generator 40, exposes the component supply body TW to the plasma, and, after determining that a volatilization time for volatilizing volatile components from the component supply body TW has been secured, subsequently performs surface treatment using plasma, and, after determining that a surface treatment time for the electronic component E has been secured, terminates the surface treatment.

[0119] The pre-mounting processing device 300 of this embodiment has a plasma processing device 101, a load port 11c for loading and unloading component supply bodies TW and mounting substrates BW, a supply body cleaning device 110 for cleaning the component supply bodies TW, a mounting substrate cleaning device 120 for cleaning the mounting substrates BW, and a transport device 190 for transporting the component supply bodies TW.

[0120] The mounting system 100 of this embodiment includes a pre-mounting processing device 300 and a bonding device 180 that detaches the electronic component E processed by the pre-mounting processing device 300 from the component supply body TW and mounts it on a mounting board BW.

[0121] The pre-mounting treatment method of this embodiment is a method for performing pre-mounting treatment of the bonding surface between an electronic component E and a mounting board BW before mounting the electronic component E on the mounting board BW, and includes the following steps: a carrying-in process for carrying a component supply TW, in which a sheet T having an adhesive portion on its surface is supported by a ring R and an electronic component E is adhered to the sheet T, into a chamber 10; a reactive gas introduction process for introducing a reactive gas into the chamber 10; a plasma heating process for converting the introduced reactive gas into plasma and exposing the component supply TW to the plasma; a determination process for determining that a volatilization time has been secured in the plasma heating process for volatilizing volatile components from the component supply TW; and a termination process for performing surface treatment using plasma following the determination process, and terminating the plasma treatment after determining that a surface treatment time for the electronic component E has been secured.

[0122] Therefore, volatile components can be discharged from the component supply body TW before plasma surface treatment. After volatile components are discharged from the sheet T, particularly from the adhesive portion, by heating in the plasma heating process, plasma surface treatment can be continued. This reduces the amount of volatile components volatilized from the component supply body TW during plasma surface treatment. As a result, it is possible to prevent the volatile components volatilized from the component supply body TW from bonding to the surfaces of the electronic components E on the component supply body TW as compounds or carbon-containing functional groups. In other words, the active and clean state of the surfaces of the electronic components E is not contaminated by volatile components volatilized from the sheet T or the adhesive portion. Therefore, it is possible to prevent a decrease in the bonding strength at the bonding surface between the component supply body TW and the mounting board BW.

[0123] Furthermore, the volatile components volatilizing from the component supply body TW can be removed in one chamber 10 of the plasma processing apparatus 101. With this configuration, the surface treatment using plasma can be performed following the volatile component removal treatment, thereby shortening the treatment time and preventing the apparatus from becoming larger. In particular, in this embodiment, by heating in a reduced pressure atmosphere under the plasma heating treatment pressure, the volatile components can be volatilized from the component supply body TW more quickly. This shortens the pretreatment time and enables high-speed mounting.

[0124] (2) The plasma processing apparatus 101 has a pressure detector 80 that detects the pressure inside the chamber 10, and the control device 200 determines that the volatilization time has been ensured when the amount of pressure change calculated from the pressure detected by the pressure detector 80 becomes equal to or less than a preset pressure change amount. In this case, a decrease in the amount of volatilization means that the volatile components have been removed from the component supply body TW. Therefore, it is possible to easily detect, based on the amount of pressure change, whether the amount of volatile components volatilized from the component supply body TW has decreased to an amount that does not cause problems in the pre-bonding process. In other words, it is possible to determine, based on the amount of pressure change, whether the volatilization time for the volatile components has been ensured. Therefore, the component supply body TW can be placed in a state where the volatile components have been removed, at least to an extent that does not cause problems in the mounting process.

[0125] During plasma heating treatment under plasma heating treatment pressure, the amplitude changes due to increases and decreases in pressure due to volatile components volatilized from the component supply body TW. However, when the volatile adhesive components volatilized from the sheet T are removed to an extent that does not cause problems in the pre-bonding treatment, a point (endpoint) appears at which the amount of pressure change becomes approximately constant.

[0126] For this reason, while heating with plasma at the plasma heating treatment pressure, the amount of pressure change at the endpoint is set as a set amount of pressure change and compared with the amount of pressure change calculated from the pressure inside the chamber 10. In this way, the timing for transitioning to surface treatment can be set. If the volatile components are not removed sufficiently, unnecessary components will volatilize during plasma treatment, affecting the bonding strength. If the removal process is excessive, productivity will decrease. By properly controlling the end point (endpoint) of the removal process, necessary volatile components can be reliably removed and productivity can be increased.

[0127] (3) The plasma processing apparatus 101 is provided in the chamber 10 and has a mask 50 that exposes the electronic component E and covers a portion of the ring R and the sheet T, and the control device 200 separates the mask 50 to the maximum distance until it is determined that the volatilization of the volatile components from the component supplier TW has been completed, and separates the mask 50 to the minimum distance when it is determined that the volatilization of the volatile components from the component supplier TW has been completed.

[0128] Therefore, during the volatilization of the volatile components, the mask 50 is at the maximum distance from the sheet T, so that the volatilization of the volatile portions is not hindered. Furthermore, when performing surface treatment using plasma after the volatilization of the volatile components is completed, the distance between the mask 50 and the sheet T is minimized, and the ring R and a portion of the sheet T are covered, so that the exposed portions of the ring R and the sheet T are prevented from being etched. In the plasma treatment device 101, after a certain amount of the volatile components are removed from the component supply body TW, the surfaces of the electronic components E are activated and cleaned. In this manner, a decrease in the bonding strength at the bonding surface between the component supply body TW and the mounting board BW can be prevented.

[0129] Furthermore, it is possible to realize narrow spacing between connection terminals, which was previously impossible due to contact between bonding members made of bumps of solder, gold, copper, aluminum, etc. on the connection terminals, and it is possible to create a high-density package.

[0130] [Modifications] The plasma processing apparatus 101, the pre-mounting processing apparatus 300 serving as the pre-mounting processing unit X, and the mounting system 100 of this embodiment can also be configured in the following modifications.

[0131] (1) As shown in Figure 7, the plasma processing apparatus 101 of this embodiment may be provided with an emission intensity detector 90 that detects the plasma emission intensity within the chamber 10. When the amount of change in emission intensity detected by the emission intensity detector 90 becomes equal to or less than a preset amount, the control device 200 determines that the volatilization time has been secured at that point (endpoint). More specifically, a plasma emission monitor 91 is used that detects the plasma emission intensity through a quartz window 92 fitted in a hole formed in the chamber 10.

[0132] For example, the emission intensity detector 90 can detect the amount of volatilization of components derived from volatile components from the emission intensity at the wavelength position of the spectral line excited and emitted in the plasma. ２ , CO, C, CH ３ , C.H., C. ６ H ６ The wavelength of light derived from the above is monitored. ２It is preferable to monitor light having a wavelength that does not overlap with the light emitted from the gas and a high light intensity. The control device 200 also stores a change in light intensity at the start of volatilization, which is a value greater than a set amount for determining whether volatilization of the volatile components has started. The change in light intensity at the start of volatilization plays the same role as the change in pressure at the start of volatilization described above. The processing after determining that the volatilization time has been secured is the same as that of the plasma processing device 101 described above, and therefore will not be described.

[0133] (2) As shown in FIG. 8 , the plasma processing apparatus 101 of this embodiment may be provided with a component detector 93 that detects the amount of a specific component in the gas within the chamber 10. In this case, the component detector 93 detects the amount of volatilization of a volatile component from the component supply TW as the amount of the specific component. The control device 200 determines that the volatilization time has been secured when the amount of the specific component detected by the component detector 93 or the change in the amount of the specific component becomes a preset amount or less (endpoint). In this case, too, the control device 200 keeps the mask 50 at the maximum distance from the sheet T until it is determined that the volatilization time of the volatile component from the component supply TW has been secured, and then keeps the mask 50 at the minimum distance from the sheet T when it is determined that the volatilization time of the volatile component from the component supply TW has been secured.

[0134] More specifically, a quadrupole mass spectrometer (Q-mass) that detects components through a detection port 11k formed in the chamber 10 is used as the component detector 93. The component detector 93 ionizes the gas present in the chamber 10 and separates and measures the generated ions based on their mass. In other words, the component detector 93 analyzes the mass of ions generated from the gas present in the chamber 11b and detects the amount of each mass present.

[0135] In this case, the specific component can be, for example, a component specific to the component supply body TW. By selecting a component derived from the sheet T or adhesive portion of the component supply body TW, other than the volatile component present in the chamber 10 (for example, moisture adsorbed by the chamber wall), it is possible to suppress the evaporation of the volatile component during the surface treatment.

[0136] Such components volatilized from the plasma processing apparatus 101 appear as noise in the amount of pressure change. In this embodiment, the amount of ions derived from the volatile components volatilized from the component supplier TW is detected. This allows for more accurate measurement of the amount of volatilized components from the component supplier TW.

[0137] Therefore, the mass of ions derived from the volatile components volatilized from the component supplier TW is determined in advance, and ions having the same mass as the determined mass are monitored as the amount of volatile components volatilized from the component supplier TW. In this manner, the amount of ions derived from the volatile components volatilized from the component supplier TW is detected. That is, the amount of components is detected by monitoring ions having the same mass as the mass of ions derived from the volatile components volatilized from the component supplier TW. When the detected amount or change in the detected amount of ions derived from the volatile components volatilized from the component supplier TW becomes a set amount or less, the control device 200 determines that the volatilization time has been secured.

[0138] It is necessary to prevent the ions generated in the component detector 93 from being subjected to a force due to collisions with other molecules during the period from ionization to detection, so the component detector 93 is preferably attached to the detection port 11k of the chamber 10 via a differential pumping system in order to prevent the generated ions from colliding with other molecules.

[0139] The control device 200 may also store a volatilization start component change amount, which is a value greater than a set amount for determining whether volatilization of the adhesive component has started. The volatilization start component change amount plays the same role as the volatilization start pressure change amount described above. The processing after determining that the volatilization time has been secured is the same as that of the plasma processing device 101 described above, and therefore will not be described.

[0140] (3) The control device 200 may determine that the volatilization time has been ensured when a preset time has elapsed since the start of plasma processing. More specifically, the time (volatilization time) from the start of plasma processing until the pressure detected by the pressure detector 80, the plasma emission intensity detected by the emission intensity detector 90, or the amount of a specific component detected by the component detector 93 reaches the aforementioned endpoint is determined in advance through experiments, etc. This time is set in the control device 200 as the preset time, and when the set time has elapsed since the start of heating by plasma processing, the control device 200 determines that the volatilization time has been ensured. This simplifies the determination process and allows the processing time to be constant. Note that the processing after determining that the volatilization time has been ensured is the same as that of the plasma processing device 101 of the above-mentioned embodiment, and therefore will not be described here.

[0141] Furthermore, the set time is not limited to the above time. For example, the control device 200 may calculate a total treatment time by adding up the input volatilization time and surface treatment time, and store the calculated total treatment time as the set time. Alternatively, this total treatment time may be directly input to the control device 200, and the control device 200 may store the calculated total treatment time as the set time. In other words, the control device 200 may determine both the volatilization time and the surface treatment time together.

[0142] (4) The plasma processing apparatus 101 may have a temperature adjustment unit that adjusts the heating temperature of the component supply TW. That is, the plasma processing apparatus 101 may have a temperature adjustment unit that adjusts the heating temperature of the component supply TW by plasma heating processing. For example, the plasma processing apparatus 101 may have a heating unit 70 that heats the component supply TW. As shown in FIG. 9 , the heating unit 70 is disposed below the mounting surface on which the component supply TW is mounted. In this embodiment, the heating unit 70 is built into the chamber 11b below the stage 20. When the component supply TW is supported on the stage 20, the heating unit 70 faces the surface of the sheet T opposite to the surface to which the wafer W is attached. The heating unit 70 is, for example, a heater that generates heat when electricity is applied.

[0143] The heating unit 70 adjusts the heating temperature in combination with the heating by the plasma heating process so that the temperature of the sheet T is 40 to 200°C, preferably 40 to 80°C. The heating unit 70 is controlled by the control device 200, and stops heating after a volatilization time for the volatile components to volatilize has elapsed since the start of heating. This promotes the volatilization of the volatile components and shortens the volatilization time.

[0144] Furthermore, a cooling unit (not shown) may be provided as the temperature adjustment unit, similar to the heating unit 70, to cool the component supply unit TW during plasma treatment, thereby preventing overheating of the component supply unit TW. The cooling unit may be, for example, a flow path through which cooled coolant circulates. In this case, the cooling unit by the temperature adjustment unit adjusts the temperature of the sheet T to 40 to 200°C, preferably 40 to 80°C, along with the plasma heating treatment. Note that a heating unit and a cooling unit may be provided as the temperature adjustment unit to adjust the temperature to the above range.

[0145] (5) In the above-described embodiment, the mask 50 of the plasma processing apparatus 101 is supported from below and moves up and down. However, the mask 50 may be supported from above and moves up and down. The plasma processing apparatus 101 may not have a mask 50.

[0146] (6) The plasma processing apparatus 101 may be provided with an irradiation device 72 that irradiates the component supplier TW with UV light, and the component supplier TW may be irradiated with UV light during and / or after the volatile component removal process. By doing so, even if volatile components that have evaporated during the volatile component removal process reattach to the wafer W, the volatile components adhering to the surface of the wafer W can be decomposed and removed. Furthermore, when UV light is irradiated during the volatile component removal process, the volatile components can be easily decomposed and removed, and their reattachment to the wafer W can be suppressed.

[0147] 10, a plurality of irradiation devices 72 may be provided in the upper part of the chamber 10. In this case, the irradiation devices 72 are preferably provided near the sidewall of the chamber 10 and at positions away from the plasma P. As shown in the figure, UV light can easily reach the sheet T through gaps in the raised mask.

[0148] (7) Heating lamps may be provided instead of the heating unit 70. For example, a plurality of heating lamps may be provided in the upper part of the chamber 10, such as the irradiation device 72. Of course, the plasma processing apparatus 101 may be provided with both the heating unit 70 that heats the component supply body TW and the irradiation device 72 that irradiates the component supply body TW with UV light, or both the heating unit 70 and the irradiation device 72 may be configured to heat the component supply body TW.

[0149] (8) The control device 200 may determine that the volatilization time has been ensured by determining that the pressure has fallen below a preset pressure value, instead of the pressure change amount. In this case, instead of the set pressure change amount or the volatilization start pressure change amount, a threshold pressure value for the corresponding plasma heating process pressure is used as the set pressure value. The threshold value is determined in advance by experiment, etc. This mode is suitable when it is clear whether the pressure has fallen below the set pressure value, for example, when there is a large amount of volatile components from the component supplier TW.

[0150] (9) In the above-described embodiment, the mounting system 100 includes one bonding apparatus 180, but this is not limiting. As shown in Fig. 11, the mounting system 100 may include a plurality of bonding apparatuses 180 in the mounting unit Y. The number of bonding apparatuses 180 in the mounting unit Y can be determined according to the takt time determined from the component supplier TW, the size of the mounting board BW, the required processing time, etc., and increasing the number of bonding apparatuses 180 can improve efficiency.

[0151] In this way, when multiple bonding devices 180 are provided in the mounting section Y, as shown in FIG. 11 , a base 11m can be provided in the mounting section Y, and the multiple bonding devices 180 can be arranged so as to be connected to the periphery of the base 11m. While two bonding devices 180 are shown in FIG. 11 , the number of bonding devices 180 connected is not limited, and may be one, three, or more. Furthermore, a transport device 190α may be provided inside the base 11m, separate from the transport device 190, for distributing, supplying, and collecting component suppliers TW and mounting boards BW to each bonding device 180. Multiple transport devices 190α may be provided as needed.

[0152] Furthermore, a buffer device 11n capable of storing the component supplier TW and the mounting board BW may be provided inside the base body 11m.

[0153] The buffer apparatus 11n may store pre-processed component supply items TW and mounting boards BW without storing them in the supply item buffer apparatus 160 and mounting board buffer apparatus 170 of the mounting pre-processing section X. Also, the buffer apparatus 11n may store component supply items TW and mounting boards BW that have been subjected to the mounting process.

[0154] 11, a dedicated transport device 190β may be provided at the load port 11c. Alternatively, a supply item buffer device 160 and a mounting board buffer device 170 may be provided on the load port 11c side of the base 11a, and the component supply items TW and mounting boards BW transported by the transport device 190β may be stored in these supply item buffer devices 160 and 170. The component supply items TW and mounting boards BW stored in these supply item buffer devices 160 and 170 may be transported to each chamber 11b by the transport device 190.

[0155] The buffer device 11n may be a storehouse capable of storing a plurality of component suppliers TW and mounting boards BW. The storehouses may be stacked at intervals to store the component suppliers TW and mounting boards BW.

[0156] The buffer device 11n may store pre-processed component supplies TW and mounting boards BW that are about to undergo mounting, or may store component supplies TW and mounting boards BW that have already undergone mounting processing.

[0157] Furthermore, a plurality of buffer devices 11n may be provided within the base body 11m.

[0158] The buffer apparatus 11n may be a mounting table capable of holding only one component supplier TW or one mounting board BW. In this case, the component supplier TW or one mounting board BW waiting to be mounted is stored in the supplier buffer apparatus 160 or one mounting board buffer apparatus 170, as in the above-described embodiment. The buffer apparatus 11n may also be a storehouse capable of storing a plurality of component suppliers TW or one mounting board BW. In this case, the component suppliers TW or one mounting board BW may be stored in a stacked manner, similar to the supplier buffer apparatus 160 or one mounting board buffer apparatus 170.

[0159] Furthermore, one transport device 190 may distribute the component suppliers TW and the mounting boards BW to each of the multiple bonding devices 180. In this case, the transport device 190 may be provided inside the base body formed by combining the base body 11a and the base body 11m.

[0160] (10) As described above, the mounting unit Y may be provided with the base 11m, and the mounting unit Y and the pre-mounting treatment unit X may be separate and separable units. In other words, the mounting system 100 may be configured so that the mounting unit Y and the pre-mounting treatment unit X are independent of each other. The pre-mounting treatment unit X may be configured to include the plasma treatment unit 101. In this case, the control device 200 may control both the pre-mounting treatment unit X and the mounting unit Y provided separately from it, or separate control devices may be provided for each.

[0161] Even in the various modified examples described above, it is possible to achieve narrow connection terminal spacing that was previously impossible due to contact between mounting components made of bumps of solder, gold, copper, aluminum, etc. on the connection terminals, thereby making it possible to create a high-density package.

[0162] [Other Embodiments] While the embodiments of the present invention and modifications of each part have been described above, these embodiments and modifications of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be embodied in various other forms, and various omissions, substitutions, modifications, and combinations can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included within the scope and spirit of the invention, and are also included in the invention described in the claims.

[0163] 11a, 11m base body 11b chamber 11c load port 11d window member 11e hole 11f stopper 11j, 11k detection port 11n buffer device 10 chamber 20 stage 21 drive unit 21a, 21b rod 21c drive mechanism 30 gas inlet 31 supply device 31a piping 40 plasma generator 41 antenna 42 power supply 43 matching box 50 mask 50a support shaft 51 drive unit 51a rod 51b drive mechanism 60 exhaust port 61 pressure reducing device 61a piping 70 heating unit 72 irradiation device 74 temperature detector 80 pressure detector 90 emission intensity detector 91 plasma emission monitor 92 window 93 component detector 100 mounting system 101 Plasma processing apparatus 110: Supply body cleaning apparatus 111: Cleaning chamber 111a: Opening 111b: Shutter 112: Support section 113: Rotation mechanism 114: Cup 115: Supply section 115a: Nozzle 115b: Movement mechanism 120: Mounting substrate cleaning apparatus 130: Adjustment processing apparatus 131: Irradiation apparatus 140: Gauging apparatus 150: Alignment apparatus 160: Supply body buffer apparatus 161: Storage 170: Mounting substrate buffer apparatus 171: Storage 180: Bonding apparatus 190, 190α, 190β: Transport apparatus 191: Transport robot 191a: Robot hand 192: Movement mechanism 200: Control apparatus 300: Pre-mounting processing apparatus TW: Component supply body BW: Mounting substrate X: Pre-mounting processing section Y: Mounting section

Claims

1. A plasma processing apparatus for performing plasma surface treatment on the bonding surfaces of electronic components and a mounting substrate before mounting the electronic components on the mounting substrate, comprising: a stage for supporting a component supply body having a sheet with an adhesive portion on its surface supported by a ring, the component supply body having the electronic components adhered to the sheet; a chamber on which the stage is provided and whose interior can be depressurized; an exhaust port for evacuating the chamber; a gas inlet port for introducing a reactive gas into the depressurized chamber; a plasma generator for converting the reactive gas into plasma; and a control device for converting the reactive gas into plasma using the plasma generator, exposing the component supply body to the plasma, and subsequently performing surface treatment using plasma after determining that a volatilization time for volatilizing volatile components from the component supply body has been secured, and terminating the surface treatment after determining that the surface treatment time for the electronic components has been secured.

2. A plasma processing apparatus as described in claim 1, characterized in that it has a pressure detector that detects the pressure inside the chamber, and the control device determines that the volatilization time has been secured when the pressure value of the pressure detected by the pressure detector or the pressure change amount calculated from the pressure value becomes equal to or less than a preset set pressure value or set pressure change amount.

3. A plasma processing apparatus as described in claim 1, characterized in that it has an emission intensity detector that detects the plasma emission intensity within the chamber, and the control device determines that the volatilization time has been secured when the emission intensity or the amount of change in emission intensity detected by the emission intensity detector becomes equal to or less than a predetermined set amount.

4. A plasma processing apparatus as described in claim 1, characterized in that it has a component detector that detects the amount of a specific component in the gas within the chamber, and the control device determines that the volatilization time has been secured when the amount of the specific component detected by the component detector or the change in the amount of the specific component becomes a predetermined set amount or is below the set amount.

5. The plasma processing apparatus according to claim 1, wherein said control device adjusts the amount of reactive gas introduced from said gas inlet when it is determined that said volatilization time has been ensured.

6. A plasma processing apparatus according to claim 1, further comprising a temperature adjusting unit for adjusting the temperature of said component supply body.

7. A plasma processing apparatus as described in claim 1, characterized in that it has a mask provided within the chamber, exposing the electronic components and covering the ring and a portion of the sheet, and the control device moves the mask away from the sheet to a maximum distance until it is determined that the volatilization of the volatile components from the component supply has been completed, and moves the mask away from the sheet to a minimum distance when it is determined that the volatilization of the volatile components from the component supply has been completed.

8. A pre-mounting processing device comprising: a plasma processing device according to any one of claims 1 to 7; a load port for loading and unloading the component supply body and the mounting substrate; a supply body cleaning device for cleaning the component supply body; a mounting substrate cleaning device for cleaning the mounting substrate; and a transport device for transporting the component supply body.

9. A mounting system comprising: the pre-mounting processing device according to claim 8; and a bonding device that removes the electronic components processed by the pre-mounting processing device from the component supply body and mounts them on a mounting board.

10. A pre-mounting treatment method for performing pre-mounting treatment of a bonding surface between an electronic component and a mounting board before mounting the electronic component on the mounting board, the pre-mounting treatment method comprising: a carrying-in process for carrying into a chamber a component supply body having a sheet with an adhesive portion on its surface supported by a ring, the component supply body having the electronic component adhered to the sheet; a reactive gas introducing process for introducing a reactive gas into the chamber; a plasma heating process for converting the introduced reactive gas into plasma and exposing the component supply body to the plasma; a determination process for determining that a volatilization time for volatilizing volatile components from the component supply body has been secured in the plasma heating process; and a termination process for performing a surface treatment using plasma following the determination process, and terminating the surface treatment after determining that the surface treatment time for the electronic component has been secured.

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